WO2019177038A1 - プラズマ処理装置、プラズマ処理方法、及びプラズマ処理装置用プログラム - Google Patents

プラズマ処理装置、プラズマ処理方法、及びプラズマ処理装置用プログラム Download PDF

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WO2019177038A1
WO2019177038A1 PCT/JP2019/010315 JP2019010315W WO2019177038A1 WO 2019177038 A1 WO2019177038 A1 WO 2019177038A1 JP 2019010315 W JP2019010315 W JP 2019010315W WO 2019177038 A1 WO2019177038 A1 WO 2019177038A1
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Prior art keywords
antenna
current
detection unit
current value
current detection
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PCT/JP2019/010315
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English (en)
French (fr)
Japanese (ja)
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敏彦 酒井
誓治 中田
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日新電機株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • the present invention relates to a plasma processing apparatus provided with an antenna for generating an inductively coupled plasma through a high-frequency current, a plasma processing method using the plasma processing apparatus, and a program for the plasma processing apparatus.
  • Patent Document 1 a plurality of antennas are arranged on four sides of a substrate in a vacuum vessel, and a high-frequency current is passed through these antennas to cause inductively coupled plasma ( Some are configured to plasma process a substrate by generating an abbreviation ICP).
  • the plasma processing apparatus further includes a variable impedance element connected to each of the plurality of antennas, and a pickup coil or a capacitor provided on the power feeding side of each of the plurality of antennas. Then, by controlling the impedance value of the variable impedance element based on the output value from the pickup coil or capacitor, the density of the plasma generated around each antenna is controlled within a predetermined range and generated in the vacuum vessel.
  • the plasma density is spatially uniform.
  • the present invention has been made to solve the above-described problems, and it is possible to cope with an increase in the size of a substrate by using a long antenna, and a uniform plasma along the longitudinal direction of the antenna. It is the main issue to generate
  • a plasma processing apparatus includes an antenna for generating plasma in a vacuum vessel that accommodates a substrate, a high-frequency power source that supplies a high-frequency current to the antenna, and a current that flows through a feeding-side end of the antenna.
  • a control device that controls the reactance of the load using the first current value detected by the current detection unit and the second current value detected by the second current detection unit as parameters.
  • the load here is what consumes the high frequency current supplied from a high frequency power supply.
  • the reactance of the load is controlled by using the first current value flowing through the power feeding side end of the antenna and the second current value flowing through the ground side end of the antenna as parameters. Can be made as uniform as possible along the longitudinal direction. As a result, it is possible to generate uniform plasma along the longitudinal direction of the antenna while using a long antenna to cope with an increase in the size of the substrate.
  • the load is a variable capacitor, and the control device controls the first current value and the second current.
  • the value of the variable capacitor is used as a parameter.
  • the control device may be configured so that the first current value and the second current value are equal to each other.
  • the reactance of the feedback control is performed.
  • At least two antennas are connected in series, and the first current detector, the second current detector, and the load are provided for each antenna, and the high frequency of the two antennas
  • the second current detection unit that detects the current flowing through the ground side end of the power supply side antenna is also used as the first current detection unit that detects the current flowing through the power supply side end of the other antenna.
  • the number of current detection units can be reduced by one compared to a configuration in which the first current detection unit and the second current detection unit are provided for each antenna.
  • the equipment cost can be reduced and the parameter for controlling the load can be reduced by one, so that the control becomes easy and the current can be made more uniform.
  • the impedance of the antenna increases, thereby generating a large potential difference between both ends of the antenna.
  • plasma uniformity such as plasma density distribution, potential distribution, and electron temperature distribution is deteriorated due to the influence of the large potential difference, and the uniformity of substrate processing is also deteriorated.
  • the impedance of the antenna increases, there is a problem that it is difficult for a high-frequency current to flow through the antenna.
  • At least two of the antennas penetrate each of the opposing side walls of the vacuum vessel and are connected in series with each other by a connection conductor interposed between the end portions on the same side of each antenna, and the connection conductor is It is preferable to have a variable capacitor electrically connected to the pair of antennas.
  • the reactance with respect to the high-frequency current can be simply calculated by subtracting the capacitive reactance of the variable capacitor from the inductive reactance of the antenna. Impedance can be reduced. As a result, even when the antenna is lengthened, an increase in impedance can be suppressed, high-frequency current can easily flow through the antenna, and plasma can be generated efficiently.
  • the antenna has a flow path through which a coolant flows, and the connection conductor connects the variable capacitor and an end of one antenna and flows out from an opening formed in the end.
  • the first connecting portion that guides the coolant to the variable capacitor, the variable capacitor and the end of the other antenna are connected, and the variable capacitor is passed through the opening formed in the end.
  • the cooling liquid is a dielectric of the variable capacitor.
  • the plasma processing method includes an antenna for generating plasma in a vacuum container that accommodates a substrate, a high-frequency power source that supplies a high-frequency current to the antenna, and a current that flows through a power feeding side end of the antenna.
  • a first current detecting unit for detecting current a second current detecting unit for detecting a current flowing in the grounded end of the antenna, and a load having a variable reactance connected to the grounded end of the antenna.
  • a program for a plasma processing apparatus includes an antenna for generating plasma in a vacuum container that accommodates a substrate, a high-frequency power source that supplies a high-frequency current to the antenna, and a feeding side end of the antenna.
  • a first current detection unit that detects a flowing current; a second current detection unit that detects a current flowing through a ground-side end of the antenna; and a load having a variable reactance connected to the ground-side end of the antenna.
  • a program for use in a plasma processing apparatus comprising the first current value detected by the first current detector and the second current value detected by the second current detector as parameters. This program causes a computer to exert a function of controlling the reactance of the computer.
  • uniform plasma can be generated along the longitudinal direction of the antenna while being able to cope with an increase in the size of the substrate using a long antenna.
  • the longitudinal cross-sectional view which shows typically the structure of the plasma processing apparatus of this embodiment.
  • the functional block diagram which shows the function of the control apparatus of the embodiment.
  • the plasma processing apparatus 100 of this embodiment performs processing on the substrate W using inductively coupled plasma P.
  • substrate W is a board
  • the processing applied to the substrate W is, for example, film formation by plasma CVD, etching, ashing, sputtering, or the like.
  • the plasma processing apparatus 100 is a plasma CVD apparatus when a film is formed by plasma CVD, a plasma etching apparatus when etching is performed, a plasma ashing apparatus when ashing is performed, and a plasma sputtering apparatus when sputtering is performed. be called.
  • the plasma processing apparatus 100 includes a vacuum vessel 2 that is evacuated and into which a gas G is introduced, a long antenna 3 disposed in the vacuum vessel 2, and a vacuum vessel 2.
  • a high frequency power source 4 for applying a high frequency for generating inductively coupled plasma P to the antenna 3 is provided.
  • a high frequency is applied to the antenna 3 from the high frequency power source 4
  • a high frequency current IR flows through the antenna 3
  • an induction electric field is generated in the vacuum chamber 2
  • inductively coupled plasma P is generated.
  • the vacuum vessel 2 is, for example, a metal vessel, and the inside thereof is evacuated by the evacuation device 5.
  • the vacuum vessel 2 is electrically grounded in this example.
  • a substrate holder 6 that holds the substrate W is provided in the vacuum container 2.
  • a bias voltage may be applied to the substrate holder 6 from the bias power source 7.
  • the bias voltage is, for example, a negative DC voltage, a negative pulse voltage, or the like, but is not limited thereto. With such a bias voltage, for example, the energy when positive ions in the plasma P are incident on the substrate W can be controlled to control the crystallinity of the film formed on the surface of the substrate W. .
  • a heater 61 for heating the substrate W may be provided in the substrate holder 6.
  • the antenna 3 is linear here, and is 1 above the substrate W in the vacuum chamber 2 and along the surface of the substrate W (for example, substantially parallel to the surface of the substrate W).
  • the book is arranged.
  • Insulating members 8 are respectively provided at portions where both end portions of the antenna 3 penetrate outside the vacuum vessel 2. Both end portions of the antenna 3 pass through the insulating members 8, and the through portions are vacuum-sealed by packing 91, for example. Each insulating member 8 and the vacuum vessel 2 are also vacuum sealed by, for example, packing 92.
  • the material of the insulating member 8 is, for example, ceramics such as alumina, quartz, or engineering plastic such as polyphenylene sulfide (PPS) or polyether ether ketone (PEEK).
  • one end is a power supply side end 3a connected to the high frequency power supply 4, and the other end is a ground side end that is grounded. 3b.
  • the power supply side end 3a is connected to the high frequency power source 4 via the matching circuit 41, and the ground side end 3b is grounded via the variable capacitor VC.
  • the variable capacitor VC consumes a high-frequency current supplied from the high-frequency power supply 4, and is an example of a reactance element having a variable reactance.
  • the high frequency current IR can flow from the high frequency power supply 4 to the antenna 3 via the matching circuit 41, and the reactance with respect to the high frequency current IR can be changed by changing the capacitance of the variable capacitor VC.
  • the high frequency is, for example, a general 13.56 MHz, but is not limited thereto.
  • a portion of the antenna 3 located in the vacuum vessel 2 is covered with a straight tubular insulating cover 10. Both ends of the insulating cover 10 are supported by insulating members 8.
  • the material of the insulating cover 10 is, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon or the like.
  • the antenna 3 of the present embodiment has a hollow structure having a flow path 3S through which the coolant CL flows.
  • the metal pipe 31 is a straight pipe.
  • the material of the metal pipe 31 is, for example, copper, aluminum, alloys thereof, stainless steel, or the like.
  • the plasma processing apparatus 100 detects the current flowing through the power supply side end 3a of the antenna 3 and the second current detecting the current flowing through the ground side end 3b of the antenna 3.
  • a current detection unit S2 and a control device X that controls the capacitance of the variable capacitor VC using the first current value detected by the first current detection unit S1 and the second current value detected by the second current detection unit S2 as parameters. It further comprises.
  • the first current detection unit S1 is a current monitor, such as a current transformer, which is attached to the power supply side end 3a or the vicinity thereof and is located outside the vacuum vessel 2, and has a magnitude of current flowing through the power supply side end 3a. A certain first current value I1 is detected, and a signal indicating the first current value I1 is output to the control device X.
  • the second current detection unit S2 is a current monitor, such as a current transformer, which is attached to the ground side end 3b or the vicinity thereof and is located outside the vacuum vessel 2, and has a magnitude of current flowing through the ground side end 3b. A certain second current value I2 is detected, and a signal indicating the second current value I2 is output to the control device X.
  • the control device X is physically a computer including a CPU, a memory, an A / D converter, an input / output interface, and the like. A program stored in the memory is executed, and each device cooperates, so that FIG. As shown in FIG. 4, the first current value acquisition unit X1, the second current value acquisition unit X2, and the reactance control unit X3 are configured to exhibit functions. Hereinafter, each part will be described.
  • the first current value acquisition unit X1 acquires a signal indicating the first current value I1 from the first current detection unit S1 by wire or wireless, and transmits the first current value I1 to the reactance control unit X3. .
  • the second current value acquisition unit X2 acquires a signal indicating the second current value I2 from the second current detection unit S2 by wire or wireless, and transmits the second current value I2 to the reactance control unit X3. .
  • the reactance control unit X3 controls the capacitance of the variable capacitor VC using the first current value I1 acquired by the first current value acquisition unit X1 and the second current value I2 acquired by the second current value acquisition unit X2 as parameters. is there.
  • a plurality of loads as reactance elements whose reactances are measured by a network analyzer or the like are prepared, and loads having different reactances are sequentially connected to the ground side of the antenna 3 as shown in FIG.
  • the current difference obtained by subtracting the second current value I2 detected by the second current detection unit S2 from the first current value I1 detected by the first current detection unit S1 is an average value of these current values I1 and I2.
  • the measured data shown in FIG. 4 is a plot of the value divided by and the reactance of the load connected to the ground side of the antenna 3 at that time.
  • the reactance control unit X3 is configured to feedback control the capacitance of the variable capacitor VC so that the first current value I1 and the second current value I2 are equal.
  • I1-second current value I2 ⁇ 0 the capacitance of the variable capacitor VC is reduced to reduce reactance, and when first current value I1-second current value I2> 0, the capacitance of the variable capacitor VC is increased. To increase the reactance.
  • variable capacitor VC is controlled using the plasma processing apparatus 100 of the present embodiment so that the first current value I1 and the second current value I2 are equal to each other corresponds to the variable capacitor VC of the present embodiment.
  • FIG. 5 shows a result of comparison of variations in film forming speed along the longitudinal direction of the antenna when the configuration is not provided and the above-described control is not performed (comparative example).
  • the “variation” is a value obtained by the following equation.
  • the first current value flowing through the power feeding side end 3a of the antenna 3 is equal to the second current value flowing through the ground side end 3b of the antenna 3.
  • the capacitance of the variable capacitor VC is feedback-controlled, the current flowing through the antenna 3 can be made as uniform as possible along the longitudinal direction.
  • variable capacitor VC is used as a load with variable reactance, for example, the configuration of the entire apparatus can be simplified as compared with a configuration in which a plurality of fixed capacitors having different capacities are connected to the antenna in a switchable manner. .
  • the antenna 3 can be cooled by the coolant CL, the plasma P can be generated stably.
  • the plasma processing apparatus 100 includes one antenna 3, but may include a plurality of antennas 3 connected in series or in parallel.
  • the antenna 3 on the high frequency power supply side (hereinafter referred to as the first antenna 3 ⁇ / b> A) has its power supply side end 3 a connected to the high frequency power supply 4 via the matching circuit 41,
  • the antenna 3 (hereinafter referred to as the second antenna 3B) has a ground side end 3b grounded.
  • a first variable capacitor VC1 is provided between each first antenna 3A and the matching circuit 41, and each first antenna 3A is connected to a common high-frequency power source 4 or matching circuit 41. Yes. On the other hand, each second antenna 3B is grounded via a second variable capacitor VC2.
  • connection conductor 12 interposed between the end portions on the same side of the antennas 3A and 3B, as shown in FIG.
  • connection conductor 12 is omitted for convenience of explanation.
  • connection conductor 12 connects the ground side end 3b of the first antenna 3A and the power supply side end 3a of the second antenna 3B, and has a flow path inside, and each antenna is connected to the flow path.
  • a cooling liquid CL for cooling 3A and 3B flows. Thereby, the coolant CL that has flowed through the first antenna 3 ⁇ / b> A flows into the second antenna 3 ⁇ / b> B through the flow path of the connection conductor 12.
  • connection conductor 12 connects the third variable capacitor VC3 that is electrically connected to the antenna 3, and the first variable capacitor VC3 and the ground-side end 3b of the first antenna 3A. And a second connection portion 15 for connecting the third variable capacitor VC3 and the power feeding side end portion 3a of the second antenna 3B.
  • the first connection portion 14 surrounds the ground-side end portion 3b of the first antenna 3A, thereby making electrical contact with the antenna 3A and cooling from the opening 3H formed at the end portion of the antenna 3A.
  • the liquid CL is guided to the third variable capacitor VC3.
  • the second connection portion 15 surrounds the power supply side end portion 3a of the second antenna 3B, thereby making electrical contact with the antenna 3B and supplying the coolant CL that has passed through the third variable capacitor VC3 to the antenna 3B. It leads to the opening 3H formed at the end of 3B.
  • the third variable capacitor VC3 includes a first fixed electrode 16 electrically connected to the first antenna 3A, a second fixed electrode 17 electrically connected to the second antenna 3B, and a first A first capacitor is formed with the fixed electrode 16 and a movable electrode 18 is formed between the second fixed electrode 17 and a second capacitor.
  • the movable electrode 18 has a predetermined rotation axis. By rotating around C, the capacitance can be changed.
  • the variable capacitor 13 includes an insulating storage container 19 that stores the first fixed electrode 16, the second fixed electrode 17, and the movable electrode 18, and the cooling liquid CL that fills the inside of the storage container 19 is It becomes a dielectric of the variable capacitor 13.
  • the second current detection unit S2 provided for the first antenna 3A is also used as the first current detection unit S1 for the second antenna 3B, and the second variable capacitor VC3 and the second current detection unit S2 are used. It arrange
  • this current detection unit is also referred to as a combined current detection unit S1 (S2).
  • the shared current detection unit S1 (S2) may be disposed between the third variable capacitor VC3 and the ground side end 3b of the first antenna 3A.
  • the first current detection unit S1 provided for the first antenna 3A detects the first current value I1 flowing through the power feeding side end 3a of the first antenna 3A. Further, the shared current detector S1 (S2) detects the second current value I2 that flows through the ground-side end 3b of the first antenna 3A and flows through the power-feed end 3a of the second antenna 3B. Further, the second current detection unit S2 provided for the second antenna 3B detects the third current value I3 flowing through the ground-side end 3b of the second antenna 3B.
  • control device uses the first current value I1, the second current value I2, and the third current value I3 as parameters, and the second variable capacitor VC2 and the third variable capacitor VC3. Control the capacity.
  • the measurement data shown in FIG. The description will be given with reference.
  • This measurement data is obtained by taking the reactance X20 between the ground side end 3b of the first antenna 3A and the power supply side end 3a of the second antenna 3B on the horizontal axis, and the ground side end 3b of the second antenna 3B.
  • the reactance X30 of the first current value I1, the second current value I2, and the third current value I3 is represented by the standard deviation ⁇ of the current values I1, I2, and I3 according to the size of the plotted circle. The value divided by the average value is shown.
  • the “variation” is a value obtained by the following equation. (Standard deviation ⁇ of I1, I2, and I3) / (average value of I1, I2, and I3)
  • the control device sets the capacitance of the second variable capacitor VC2 and the capacitance of the third variable capacitor VC3 so that the first current value I1, the second current value I2, and the third current value I3 are equal. It is configured to perform feedback control. More specifically, when the first current value I1 ⁇ the second current value I2 ⁇ 0, the capacitance of the second variable capacitor VC2 is reduced to reduce the reactance, and the first current value I1 ⁇ the second current value I2 If> 0, the reactance is increased by increasing the capacitance of the second variable capacitor VC2.
  • the reactance is reduced by reducing the capacitance of the third variable capacitor VC3, and when the second current value I2 ⁇ the third current value I3> 0.
  • the reactance is increased by increasing the capacity of the third variable capacitor VC3.
  • the capacitance of the second variable capacitor VC2 and the capacitance of the third variable capacitor VC3 are set so that the first current value I1, the second current value I2, and the third current value I3 are equal. Since it is controlled, uniform plasma P can be generated along the longitudinal direction from the first antenna 3A to the second antenna 3B.
  • the distribution ratio of the high-frequency current IR to each first antenna 3A is grasped based on the first current value I1 of the first current detection unit S1 provided for each of the power supply side end portions 3a of the first antenna 3A. can do. Therefore, the distribution ratio of the high-frequency current IR supplied to each first antenna 3A can be adjusted by changing the capacitance of each first variable capacitor VC1 based on each first current value I1.
  • the high-frequency current IR flowing from the first antenna 3A and the second antenna 3B is made uniform along the longitudinal direction, and the high-frequency current IR from the high-frequency power source 4 is evenly distributed to the first antennas 3A provided in parallel. It is possible to generate plasma P that is spatially uniform.
  • the variation in film formation speed along the arrangement direction of the antennas 3 was compared between the case where each of the variable capacitors VC1 to VC3 was controlled as described above and the case where the above-described control was not performed (comparative example).
  • the results are shown in FIG.
  • the “variation” is a value obtained by the following equation.
  • a plurality of antennas 3 may be connected in parallel to a common high-frequency power supply 4 via a matching circuit 41.
  • three antennas 3 are connected to the high-frequency power source 4 via the first variable capacitor VC1 and grounded via the second variable capacitor VC2. Note that the number of antennas 3 may be changed as appropriate.
  • each of the first current value detected by the first current detector S1 and the second current value detected by the second current detector S2 are equal to each other as in the above embodiment.
  • the distribution ratio of the high-frequency current IR to each antenna 3 is determined based on the first current value detected by the first current detection unit S1 provided at each power supply side end 3a. I can grasp it. Therefore, the distribution ratio of the high-frequency current IR supplied to each antenna 3 can be adjusted by changing the capacitance of the first variable capacitor VC1 based on the first current value.
  • the high-frequency current IR flowing through each antenna 3 can be made uniform along the longitudinal direction, and the high-frequency current IR can be evenly distributed to each antenna 3, and a spatially uniform plasma P can be generated. It becomes.
  • the reactance control unit X3 of the embodiment is configured to feedback control the capacitance of the variable capacitor VC so that the first current value I1 and the second current value I2 are equal.
  • the capacitance of the variable capacitor VC may be feedback-controlled so that the difference from the second current value I2 becomes a predetermined value (a value greater than zero).
  • the reactance control unit X3 sets an initial value of the capacity of the variable capacitor VC based on the reactance. It may be configured as follows.
  • the arrangement of the first current detection unit S1 and the second current detection unit S2 is provided at the power supply side end 3a and the ground side end 3b of the antenna 3 in the above embodiment. You may provide in the conducting wire connected to the part 3a, and the conducting wire connected to the ground side edge part 3b.
  • control device changes the capacity of the variable capacitor based on the first current value and the second current value.
  • the operator manually changes the capacity of the variable capacitor based on the first current value and the second current value.
  • the capacitance of the variable capacitor may be changed as the reactance of the reactance element.
  • variable capacitor is used as a load with variable reactance.
  • a load in which a plurality of reactance elements having different capacities and reactances are connected in parallel so as to be switchable with respect to an antenna may be used.
  • the antenna is linear, but it may be curved or bent.
  • the metal pipe may be curved or bent, or the insulating pipe may be curved or bent.

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  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
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Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH11233289A (ja) * 1998-02-17 1999-08-27 Univ Nagoya 高周波放電装置及び高周波処理装置
JP2005149887A (ja) * 2003-11-14 2005-06-09 Mitsui Eng & Shipbuild Co Ltd プラズマ発生装置用アンテナの整合方法及びプラズマ発生装置
JP2016207322A (ja) * 2015-04-17 2016-12-08 日新電機株式会社 プラズマ処理装置

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JPH11232289A (ja) * 1998-02-13 1999-08-27 Dainippon Printing Co Ltd 資料登録検索システム
CN105491780B (zh) * 2014-10-01 2018-03-30 日新电机株式会社 等离子体产生用的天线及具备该天线的等离子体处理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233289A (ja) * 1998-02-17 1999-08-27 Univ Nagoya 高周波放電装置及び高周波処理装置
JP2005149887A (ja) * 2003-11-14 2005-06-09 Mitsui Eng & Shipbuild Co Ltd プラズマ発生装置用アンテナの整合方法及びプラズマ発生装置
JP2016207322A (ja) * 2015-04-17 2016-12-08 日新電機株式会社 プラズマ処理装置

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