WO2019167564A1 - CIBLE DE PULVÉRISATION EN ALLIAGE Cu-Ni - Google Patents

CIBLE DE PULVÉRISATION EN ALLIAGE Cu-Ni Download PDF

Info

Publication number
WO2019167564A1
WO2019167564A1 PCT/JP2019/003997 JP2019003997W WO2019167564A1 WO 2019167564 A1 WO2019167564 A1 WO 2019167564A1 JP 2019003997 W JP2019003997 W JP 2019003997W WO 2019167564 A1 WO2019167564 A1 WO 2019167564A1
Authority
WO
WIPO (PCT)
Prior art keywords
alloy
sputtering target
alloy sputtering
oxide
powder
Prior art date
Application number
PCT/JP2019/003997
Other languages
English (en)
Japanese (ja)
Inventor
謙介 井尾
加藤　慎司
Original Assignee
三菱マテリアル株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2019000734A external-priority patent/JP6627993B2/ja
Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Priority to CN201980015784.6A priority Critical patent/CN111788332B/zh
Publication of WO2019167564A1 publication Critical patent/WO2019167564A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/12—Metallic powder containing non-metallic particles
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying

Definitions

  • the present invention relates to a Cu—Ni alloy sputtering target used for forming a thin film of Cu—Ni alloy containing Ni and the balance being Cu and inevitable impurities.
  • the Cu—Ni alloy described above is used as a wiring film for displays and the like because it is excellent in low reflection, heat resistance, and electrical characteristics as disclosed in Patent Document 1, for example.
  • Patent Document 2-4 it is also used as a base film for copper wiring.
  • a copper-nickel alloy containing 40 to 50 mass% Ni has a small temperature coefficient of resistance, and is used as a thin film resistor for a strain gauge, as shown in Patent Document 5, for example. Since this copper-nickel alloy has a large electromotive force, it is used, for example, as a thin film thermocouple and a compensating conductor as shown in Patent Document 6-8.
  • a copper nickel alloy containing 22 mass% or less of Ni is also used as a general electric resistor, a low-temperature heating element, or the like.
  • the thin film made of the Cu—Ni alloy as described above is formed by, for example, a sputtering method.
  • a Cu—Ni alloy sputtering target used for the sputtering method is conventionally manufactured by a melt casting method as shown in, for example, Patent Documents 9 and 10.
  • Patent Document 11 proposes a method for producing a sintered body of a Cu—Ni alloy.
  • JP 2017-005233 A Japanese Patent Laid-Open No. 05-251844 Japanese Patent Laid-Open No. 06-097616 JP 2010-199283 A Japanese Patent Laid-Open No. 04-346275 Japanese Patent Laid-Open No. 04-290245 JP-A-62-144074 Japanese Patent Laid-Open No. 06-104494 JP 2016-029216 A JP 2012-193444 A Japanese Patent Laid-Open No. 05-051662
  • the present invention has been made in view of the circumstances described above, and it is possible to stably form a Cu—Ni alloy film in which the coarsening of crystal grains is suppressed and the film thickness and composition are uniformized.
  • An object of the present invention is to provide a Cu—Ni alloy sputtering target.
  • the Cu—Ni alloy sputtering target of the present invention is a Cu—Ni alloy sputtering target containing Ni, the balance being Cu and inevitable impurities, and comprising a solid solution of Cu and Ni.
  • Ni oxide phases exist at the grain boundaries of the phases, and the area ratio of these Ni oxide phases is in the range of 0.1% to 5.0%.
  • the Ni oxide phase is present at the grain boundary of the parent phase composed of a solid solution of Cu and Ni, and the area ratio of these Ni oxide phases is 0.1% or more. Therefore, growth of crystal grains can be suppressed by the Ni oxide phase, and coarsening of crystal grains can be suppressed.
  • the area ratio of the Ni oxide phase is 5.0% or less, it is possible to suppress the occurrence of abnormal discharge due to the Ni oxide phase. Therefore, it is possible to stably form a Cu—Ni alloy film in which the coarsening of crystal grains is suppressed and the film thickness and composition are uniform.
  • the Ni content is preferably in the range of 16 mass% or more and 55 mass% or less, and the balance is preferably composed of Cu and inevitable impurities.
  • the Ni content is 16 mass% or more, a Cu—Ni alloy film having excellent corrosion resistance can be formed. Further, since the Ni content is 55 mass% or less, a Cu—Ni alloy film with low electrical resistance can be formed. Therefore, a Cu—Ni alloy film particularly suitable for applications requiring corrosion resistance and conductivity can be stably formed.
  • the maximum particle size of the Ni oxide phase is preferably less than 10 ⁇ m. In this case, since the maximum particle diameter of the Ni oxide phase is limited to less than 10 ⁇ m, the occurrence of abnormal discharge due to the Ni oxide phase can be further suppressed, and stable sputter film formation can be achieved. It becomes possible.
  • the average particle size of the parent phase composed of a solid solution of Cu and Ni is in the range of 5 ⁇ m to 100 ⁇ m.
  • the average particle size of the parent phase made of a solid solution of Cu and Ni is 100 ⁇ m or less, the occurrence of abnormal discharge during sputtering film formation can be sufficiently suppressed.
  • the average particle diameter of the parent phase made of a solid solution of Cu and Ni is 5 ⁇ m or more, the manufacturing cost can be kept low.
  • a Cu—Ni alloy sputtering target capable of stably forming a Cu—Ni alloy film in which the coarsening of crystal grains is suppressed and the film thickness and composition are made uniform. Can do.
  • the Cu—Ni alloy sputtering target according to this embodiment is a Cu film used as a wiring film, a copper wiring base film, a strain gauge thin film resistor, a thin film thermocouple and a compensating conductor, a general electric resistor, a low temperature heating element, and the like. -Used when forming a Ni alloy thin film.
  • the Cu—Ni alloy sputtering target according to the present embodiment may be a rectangular flat plate type sputtering target having a rectangular sputtering surface or a disk type sputtering target having a circular sputtering surface.
  • a cylindrical sputtering target whose sputtering surface is a cylindrical surface may be used.
  • the Cu—Ni alloy sputtering target according to this embodiment has a composition containing Ni, with the balance being Cu and inevitable impurities. Since Ni and Cu form a complete solid solution as shown in the binary phase diagram of FIG. 1, the content of Ni can be appropriately set according to the required characteristics such as corrosion resistance and electrical resistance. preferable. In the Cu—Ni alloy sputtering target of this embodiment, the Ni content is in the range of 16 mass% or more and 55 mass% or less, and the balance is composed of Cu and inevitable impurities.
  • Ni oxide phases exist at the grain boundaries of the parent phase composed of a solid solution of Cu and Ni.
  • the area ratio is in the range of 0.1% to 5.0%.
  • the maximum particle size of the Ni oxide phase is less than 10 ⁇ m. Furthermore, in the Cu—Ni alloy sputtering target according to the present embodiment, the average particle size of the parent phase composed of a solid solution of Cu and Ni is set in the range of 5 ⁇ m to 100 ⁇ m.
  • the area ratio of the Ni oxide phase, the maximum particle diameter of the Ni oxide phase, and the average grain size of the parent phase composed of a solid solution of Cu and Ni As described above, the area ratio of the Ni oxide phase, the maximum particle diameter of the Ni oxide phase, and the average grain size of the parent phase composed of a solid solution of Cu and Ni. The reason for defining the diameter and the component composition will be described.
  • Ni oxide phase area ratio In the Cu—Ni alloy sputtering target according to this embodiment, a Ni oxide phase is present at the crystal grain boundary of the parent phase composed of a solid solution of Cu and Ni. By this Ni oxide phase, the growth of crystal grains of the parent phase is suppressed, and the coarsening of the crystal grains is suppressed.
  • the area ratio of the Ni oxide phase is less than 0.1%, the above-described effect of suppressing the growth of crystal grains may not be sufficiently obtained.
  • the area ratio of the Ni oxide phase exceeds 5.0%, there is a possibility that abnormal discharge due to the Ni oxide phase as an insulator may occur.
  • the area ratio of the Ni oxide phase is in the range of 0.1% to 5.0%.
  • the lower limit of the area ratio of the Ni oxide phase is preferably 0.2% or more, and more preferably 0.3% or more.
  • the upper limit of the area ratio of the Ni oxide phase is preferably 4.5% or less, and is preferably 4.0% or less. More preferably.
  • the maximum particle size of the Ni oxide phase is less than 10 ⁇ m.
  • the maximum particle size of the Ni oxide phase is preferably 8 ⁇ m or less, and more preferably 5 ⁇ m or less.
  • the lower limit of the maximum particle size of the Ni oxide phase is preferably 0.1 ⁇ m or more, and more preferably 1 ⁇ m or more.
  • the average particle size of the parent phase made of a solid solution of Cu and Ni is set to 100 ⁇ m. The following is preferable.
  • the average particle size of the parent phase composed of a solid solution of Cu and Ni is 5 ⁇ m or more.
  • the lower limit of the average particle size of the parent phase composed of a solid solution of Cu and Ni is preferably 8 ⁇ m or more, and more preferably 10 ⁇ m or more.
  • the upper limit of the average particle size of the parent phase composed of a solid solution of Cu and Ni is preferably 90 ⁇ m or less, and more preferably 70 ⁇ m or less.
  • the Ni content in the Cu—Ni alloy sputtering target is set according to the required characteristics of the formed Cu—Ni alloy film.
  • the Ni content in the Cu—Ni alloy sputtering target is preferably set to 16 mass% or more.
  • the Ni content in the Cu—Ni alloy sputtering target is preferably 55 mass% or less.
  • the specific resistance of a Cu—Ni alloy sputtering target having a Ni content of 55 mass% or less is about 5 ⁇ 10 ⁇ 5 ⁇ ⁇ cm.
  • the lower limit of the Ni content in the Cu—Ni alloy sputtering target is preferably 20 mass% or more, and more preferably 25 mass% or more.
  • the upper limit of the Ni content in the Cu—Ni alloy sputtering target is preferably 50 mass% or less, and more preferably 45 mass% or less. .
  • a manufacturing method of the Cu—Ni alloy sputtering target according to the present embodiment will be described with reference to the flowchart of FIG.
  • a Cu—Ni alloy sputtering target is manufactured by a powder sintering method.
  • a sintered raw material powder is formed.
  • a mixed powder of Cu powder and Ni powder may be used, or Cu—Ni alloy powder may be used.
  • Cu—Ni alloy powder manufactured as follows is used. First, Cu raw material and Ni raw material are weighed so as to have a predetermined blending ratio. It is preferable to use a Cu raw material having a purity of 99.99 mass% or more. Moreover, it is preferable to use a Ni raw material having a purity of 99.9 mass% or more. Specifically, oxygen-free copper is preferably used as the Cu material, and electrolytic Ni is preferably used as the Ni material.
  • the crucible is filled with the Cu raw material and the Ni raw material weighed as described above, and dissolved by heating.
  • ceramic refractories such as alumina, mullite, magnesia, zirconia, or carbon can be used. It is preferable to hold the molten Cu—Ni alloy after melting the Cu raw material and the Ni raw material within a range of 3 minutes to 15 minutes. If the holding time is short, the composition of Ni and Cu may be nonuniform. Further, if the holding time is short, there is a possibility that the magnetism of Ni remains.
  • the nozzle hole diameter is preferably in the range of 0.5 mm to 5.0 mm.
  • the Ar gas injection gas pressure is preferably in the range of 1 MPa to 10 MPa.
  • the molten metal temperature is preferably in the range of 1400 ° C. or higher and 1700 ° C. or lower.
  • the gas atomized powder obtained as described above is classified by sieving after cooling to obtain a Cu—Ni alloy powder having a predetermined particle size.
  • the average particle diameter of the Cu—Ni alloy powder is in the range of 1 ⁇ m to 300 ⁇ m.
  • Ni oxide powder is further added to the above-described Cu—Ni alloy powder. It is preferable to use a stable NiO powder as the Ni oxide powder. It is preferable to use Ni oxide powder having a purity of 95 mass% or more and an average particle size in the range of 0.1 ⁇ m or more and less than 10 ⁇ m. Further, the amount of Ni oxide powder added is preferably adjusted as appropriate so that the area ratio of the Ni oxide phase in the Cu—Ni alloy sputtering target is within the above range.
  • a mixer or a blender specifically, a Henschel mixer, a rocking mixer, or a V-type mixer can be used. As described above, a sintered raw material powder containing Ni oxide is obtained.
  • the obtained sintering raw material powder composed of the mixed powder of Cu—Ni alloy powder and Ni oxide powder is pressurized and heated to obtain a sintered body having a predetermined shape.
  • a hot isostatic pressing method HIP
  • HP hot press method
  • a hot isostatic pressing method HIP
  • the sintering conditions are preferably temperature: 800 ° C. or higher and 1200 ° C. or lower, pressure: 10 MPa or higher and 200 MPa or lower, holding time: 1 hour or longer and 6 hours or shorter.
  • the Cu—Ni alloy sputtering target according to the present embodiment is manufactured by the powder sintering method.
  • a Ni oxide phase exists at the grain boundary of the parent phase composed of a solid solution of Cu and Ni. Since the area ratio of the phase is 0.1% or more, the growth of crystal grains can be suppressed by the Ni oxide phase, and the coarsening of the crystal grains can be suppressed. In addition, since the area ratio of the Ni oxide phase is 5.0% or less, it is possible to suppress the occurrence of abnormal discharge due to the Ni oxide phase. Therefore, it is possible to stably form a Cu—Ni alloy film in which the coarsening of crystal grains is suppressed and the film thickness and composition are uniform.
  • the maximum particle size of the Ni oxide phase is limited to less than 10 ⁇ m, the occurrence of abnormal discharge due to the Ni oxide phase as an insulator is further suppressed. Therefore, it becomes possible to form a sputter film stably.
  • the Ni content when the Ni content is 16 mass% or more, a Cu—Ni alloy film having excellent corrosion resistance can be formed. In addition, when the Ni content is 55 mass% or less, a Cu—Ni alloy film with low electrical resistance can be formed. Therefore, it is possible to form a Cu—Ni alloy film that is particularly suitable for applications requiring corrosion resistance and conductivity.
  • the sputtering rate can be further stabilized over the entire sputtering surface, It is possible to further suppress the occurrence of abnormal discharge during sputtering film formation.
  • the average particle diameter of the parent phase made of a solid solution of Cu and Ni is 5 ⁇ m or more, an increase in manufacturing cost can be suppressed.
  • the Ni—O powder is mixed with the Cu—Ni alloy powder to form the sintered raw material powder.
  • the present invention is not limited to this, and the Ni oxide is used as the raw material during atomization.
  • a Cu—Ni alloy powder containing Ni oxides may be produced by adding a material.
  • Cu—Ni alloy powder containing Ni oxide may be manufactured by introducing oxygen gas into the atomizing to oxidize Ni.
  • Cu—Ni alloy sputtering targets of Invention Examples 1 to 7 and Comparative Examples 1 to 4 were produced by a powder sintering method as follows. Prepare oxygen free copper with a purity of 99.99 mass% as a Cu raw material, and electrolytic Ni with a purity of 99.9% or higher as a Ni raw material, put it in a crucible made of alumina and set it in a gas atomizer, and have an average particle size of 50 ⁇ m Cu—Ni alloy powder was obtained.
  • the atomizing conditions were a molten metal temperature of 1550 ° C., a holding time of 8 minutes, an injection pressure of 5 MPa, and a nozzle diameter of 2.0 mm.
  • NiO powder having a purity of 99 mass% or more and an average particle size of less than 10 ⁇ m was prepared as Ni oxide powder.
  • Ni oxide powder having the composition shown in Table 1 was mixed with the above-described Cu—Ni alloy powder to obtain a sintered raw material powder.
  • Ni of the added Ni oxide powder NiO powder
  • the mixing ratio of the Ni raw material and the Cu raw material was determined so that the composition shown in Table 1 was obtained, to produce a Cu—Ni alloy powder.
  • the above sintered raw material powder was sintered by the HIP method under the conditions of a temperature of 1000 ° C., a pressure of 100 MPa, and a holding time of 2 hours to obtain a sintered body.
  • the obtained sintered body was machined to obtain a disk-shaped Cu—Ni alloy sputtering target having a diameter of 150.4 mm and a thickness of 6 mm.
  • An element mapping image of Cu, Ni, and O was taken with an observation area of 2 , and from the obtained element mapping image of Cu, Ni, and O, a region where only Ni and O coexisted was determined to be a Ni oxide phase. . And the area ratio of the Ni oxide phase which occupies for the whole image was computed, and the result of the sample of 5 points
  • the observed equivalent circle diameter of the Ni oxide phase was determined using image analysis software Winroof, and the largest equivalent circle diameter was shown in Table 1 as the maximum particle diameter of the Ni oxide phase.
  • Variation in oxygen amount (%) ⁇ (maximum value ⁇ minimum value) / average value ⁇ ⁇ 100 As a result, it was confirmed that the variation in the amount of oxygen in the Cu—Ni alloy sputtering targets of Invention Examples 1 to 7 and Comparative Examples 1 to 4 was 30% or less.
  • Comparative Example 1 In Comparative Example 1 in which the Ni oxide phase was not confirmed, the average particle size of the parent phase composed of a solid solution of Cu and Ni became as large as 163 ⁇ m, and the number of occurrences of abnormal discharge increased.
  • Comparative Example 2 In Comparative Example 2 in which the area ratio of the Ni oxide phase was less than 0.1%, the average particle size of the parent phase made of a solid solution of Cu and Ni was coarsened to 121 ⁇ m, and the number of occurrences of abnormal discharge increased. . This is presumably because the effect of suppressing crystal growth by the Ni oxide phase could not be obtained.
  • Examples 1 to 7 of the present invention in which the area ratio of the Ni oxide phase was in the range of 0.1% to 5.0%, the coarsening of the parent phase composed of a solid solution of Cu and Ni was suppressed, and the occurrence of abnormal discharge was suppressed.
  • the maximum particle size of the Ni oxide phase was less than 10 ⁇ m, the occurrence of abnormal discharge was further suppressed.
  • Cu—Ni alloy capable of stably forming a Cu—Ni alloy film in which the coarsening of crystal grains is suppressed and the film thickness and composition are made uniform is stable. It was confirmed that a sputtering target could be provided.
  • a Cu—Ni alloy sputtering target capable of stably forming a Cu—Ni alloy film in which the coarsening of crystal grains is suppressed and the film thickness and composition are made uniform. Can do.

Abstract

Une cible de pulvérisation en alliage De Cu-Ni contenant du Ni, le reste comprenant du Cu et des impuretés inévitables, ladite cible étant caractérisée en ce que des phases d'oxyde de Ni sont présentes aux limites de grains dans une phase de matrice comprenant une solution solide de Cu et de Ni, et la proportion surfacique desdites phases d'oxyde de Ni est dans la plage de 0,1 % à 5,0 %, inclus.
PCT/JP2019/003997 2018-03-01 2019-02-05 CIBLE DE PULVÉRISATION EN ALLIAGE Cu-Ni WO2019167564A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201980015784.6A CN111788332B (zh) 2018-03-01 2019-02-05 Cu-Ni合金溅射靶

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018036509 2018-03-01
JP2018-036509 2018-03-01
JP2019000734A JP6627993B2 (ja) 2018-03-01 2019-01-07 Ｃｕ−Ｎｉ合金スパッタリングターゲット
JP2019-000734 2019-01-07

Publications (1)

Publication Number Publication Date
WO2019167564A1 true WO2019167564A1 (fr) 2019-09-06

Family

ID=67805274

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/003997 WO2019167564A1 (fr) 2018-03-01 2019-02-05 CIBLE DE PULVÉRISATION EN ALLIAGE Cu-Ni

Country Status (1)

Country Link
WO (1) WO2019167564A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015079941A (ja) * 2013-09-10 2015-04-23 日立金属株式会社 積層配線膜およびその製造方法ならびにＮｉ合金スパッタリングターゲット材
WO2015170534A1 (fr) * 2014-05-08 2015-11-12 三井金属鉱業株式会社 Matériau de cible de pulvérisation cathodique
CN105734507A (zh) * 2016-04-05 2016-07-06 基迈克材料科技（苏州）有限公司 成膜均匀的细晶镍合金旋转靶材及其热挤压优化制备方法
JP2016157925A (ja) * 2015-02-25 2016-09-01 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
WO2018207770A1 (fr) * 2017-05-09 2018-11-15 三菱マテリアル株式会社 Cible de pulvérisation en alliage cuivre nickel et poudre d'alliage cuivre nickel

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015079941A (ja) * 2013-09-10 2015-04-23 日立金属株式会社 積層配線膜およびその製造方法ならびにＮｉ合金スパッタリングターゲット材
WO2015170534A1 (fr) * 2014-05-08 2015-11-12 三井金属鉱業株式会社 Matériau de cible de pulvérisation cathodique
JP2016157925A (ja) * 2015-02-25 2016-09-01 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
CN105734507A (zh) * 2016-04-05 2016-07-06 基迈克材料科技（苏州）有限公司 成膜均匀的细晶镍合金旋转靶材及其热挤压优化制备方法
WO2018207770A1 (fr) * 2017-05-09 2018-11-15 三菱マテリアル株式会社 Cible de pulvérisation en alliage cuivre nickel et poudre d'alliage cuivre nickel

Similar Documents

Publication Publication Date Title
TWI496905B (zh) A sputtering target having an oxide phase dispersed in a Co or Co alloy phase, a magnetic thin film composed of a Co or Co alloy phase and an oxide phase, and a magnetic recording medium using the magnetic thin film
KR101155358B1 (ko) 복합 산화물 소결체, 아모르퍼스 복합 산화막의 제조 방법, 아모르퍼스 복합 산화막, 결정질 복합 산화막의 제조 방법 및 결정질 복합 산화막
JP5761691B2 (ja) 複合セラミックス、半導体製造装置の構成部材及びこれらの製造方法
WO2015170534A1 (fr) Matériau de cible de pulvérisation cathodique
KR20120108062A (ko) 아모르퍼스 복합 산화막, 결정질 복합 산화막, 아모르퍼스 복합 산화막의 제조 방법, 결정질 복합 산화막의 제조 방법 및 복합 산화물 소결체
WO2011102359A1 (fr) Corps formant un ensemble cible de pulvérisation cathodique-plaque support
JP6783528B2 (ja) セラミック構造体、その製法及び半導体製造装置用部材
JP2018162493A (ja) タングステンシリサイドターゲット及びその製造方法
WO2014024519A1 (fr) Corps fritté et cible de pulvérisation
JP2017025348A (ja) Ｍｏ−Ｗ酸化物スパッタリングターゲット、及び、Ｍｏ−Ｗ酸化物スパッタリングターゲットの製造方法
WO2018207770A1 (fr) Cible de pulvérisation en alliage cuivre nickel et poudre d'alliage cuivre nickel
JP4622946B2 (ja) 抵抗薄膜材料、抵抗薄膜形成用スパッタリングターゲット、抵抗薄膜、薄膜抵抗器およびその製造方法。
WO2019167564A1 (fr) CIBLE DE PULVÉRISATION EN ALLIAGE Cu-Ni
JP6627993B2 (ja) Ｃｕ−Ｎｉ合金スパッタリングターゲット
WO2019203258A1 (fr) Cible de pulvérisation d'alliage cu-ni
JP4775140B2 (ja) スパッタリングターゲット
JP2017218621A (ja) ターゲット材及びその製造方法
JP2019039070A (ja) ＳｉＣスパッタリングターゲット
JP2021075749A (ja) スパッタリングターゲット
JP3852446B2 (ja) 抵抗薄膜材料およびこれを用いた抵抗薄膜の製造方法
JP7178707B2 (ja) ＭｇＯ－ＴｉＯ系スパッタリングターゲットの製造方法
JP4042714B2 (ja) 金属抵抗体材料、スパッタリングターゲットおよび抵抗薄膜
JP7087741B2 (ja) 抵抗体材料、抵抗薄膜形成用スパッタリングターゲット、抵抗薄膜及び薄膜抵抗器、並びに抵抗薄膜形成用スパッタリングターゲットの製造方法及び抵抗薄膜の製造方法
JP2018188731A (ja) ＣｕＮｉ合金スパッタリングターゲットおよびＣｕＮｉ合金粉末
JP2004319410A (ja) マイクロマシンスイッチの接触電極用薄膜およびこの接触電極用薄膜を形成するためのスパッタリングターゲット

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19760304

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19760304

Country of ref document: EP

Kind code of ref document: A1