WO2019167100A1 - 半導体単結晶インゴットのスライス方法 - Google Patents

半導体単結晶インゴットのスライス方法 Download PDF

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Publication number
WO2019167100A1
WO2019167100A1 PCT/JP2018/007074 JP2018007074W WO2019167100A1 WO 2019167100 A1 WO2019167100 A1 WO 2019167100A1 JP 2018007074 W JP2018007074 W JP 2018007074W WO 2019167100 A1 WO2019167100 A1 WO 2019167100A1
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WIPO (PCT)
Prior art keywords
ingot
single crystal
slicing
wafer
rotation angle
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PCT/JP2018/007074
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English (en)
French (fr)
Japanese (ja)
Inventor
広 野口
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株式会社Sumco
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Publication date
Application filed by 株式会社Sumco filed Critical 株式会社Sumco
Priority to PCT/JP2018/007074 priority Critical patent/WO2019167100A1/ja
Priority to CN201880088365.0A priority patent/CN111801771B/zh
Priority to JP2020503110A priority patent/JP6923067B2/ja
Priority to TW108102372A priority patent/TWI750447B/zh
Publication of WO2019167100A1 publication Critical patent/WO2019167100A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a method for manufacturing a semiconductor single crystal wafer such as a silicon single crystal wafer by slicing a semiconductor single crystal ingot such as a silicon single crystal ingot.
  • the single crystal member is moved along a predetermined cutting surface.
  • the cutting direction of the machining tool is set in a direction inclined to the direction in which the chips of the single crystal member are discharged by the cutting tool with respect to the normal direction perpendicular to the intersecting line between the planned cutting plane and the cleavage plane.
  • a single crystal cutting method is disclosed in which the inclination angle from the normal direction of the cutting direction is set to an angle at which the cutting efficiency of the single crystal member by the processing tool is maximized (see, for example, Patent Document 1).
  • the cleavage plane of the single crystal member appears as intersecting lines A and B on the planned cutting plane.
  • the cutting direction in which the cutting efficiency is maximized is the rotation angle ⁇ 1 from the normal line P, Q perpendicular to each of the intersecting lines A, B to the chip discharging direction side, either clockwise or counterclockwise.
  • the directions are Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 , Z 8 inclined by ⁇ 2 , ⁇ 3 , ⁇ 4 , ⁇ 5 , ⁇ 6 , ⁇ 7 , ⁇ 8, respectively. .
  • ⁇ 1 is 24 degrees
  • ⁇ 2 is 7 degrees
  • ⁇ 3 is 16 degrees
  • ⁇ 4 is 8 degrees
  • ⁇ 5 is 20 degrees
  • ⁇ 6 is 17 degrees
  • ⁇ 7 is 16 degrees
  • ⁇ 8 is 5 degrees.
  • the chips of the single crystal member are discharged with respect to the normal line that is on the planned cut surface of the single crystal and perpendicular to the intersecting line between the planned cut surface and the cleavage plane. From the direction in which the cutting ability determined by the crystallographic characteristics of the single crystal member having the positive rotation angle and the pressure contact force between the single crystal member and the processing tool is maximized. Since the single crystal member is cut by giving a cut, the cutting and removing efficiency is improved at each stage, and the cutting processing time that has been spent for a long time can be shortened. Further, since the single crystal member is not excessively strained during processing, the cut wafer is prevented from being bent or warped.
  • the single crystal ingot is sliced along the planned cutting plane, and the crystal orientation of the single crystal ingot is set to ⁇ 111>, and a single crystal cutting method of slicing parallel to the direction of the crystal habit line is disclosed (for example, see Patent Document 2).
  • the crystal orientation of the single crystal ingot is determined in advance to ⁇ 111>, and the cutting direction of the cutting machine is matched with the crystal habit line direction of the single crystal ingot. Since the single crystal ingot is sliced in parallel with the direction of the crystal habit line by a machine, a wafer with very little bending or warping can be cut and separated, and the cutting efficiency can be remarkably improved. That is, the cleavage plane of the macro single crystal ingot is usually the (111) plane, and the slice direction of the single crystal ingot was corrected along the crystal habit line generated by the difference in the degree of crystal plane development, and thus was cut. An ideal wafer is obtained in which bending and warping are hardly generated on the wafer.
  • a cylindrical semiconductor single crystal ingot is bonded and held by a holder in a state of being rotated by a predetermined rotation angle around the crystal axis of the ingot different from the central axis of the cylinder of the ingot, and in this state, the In the semiconductor single crystal ingot slicing method in which the ingot is sliced by a cutting device, a predetermined rotation angle is determined when the ingot is bonded and held by a holder so that the warpage amount of the wafer sliced by the cutting device becomes a predetermined amount.
  • a method for slicing a semiconductor single crystal ingot is disclosed (for example, see Patent Document 3).
  • the cylindrical semiconductor single crystal ingot must be cut in accordance with the crystal axis of the ingot different from the central axis of the cylinder of the ingot.
  • the rotation angle of the ingot is limited, the setting range of the predetermined rotation angle when the ingot is bonded and held by the holder is set wide, and the angle for adjusting the deviation of the crystal axis of the ingot is the predetermined rotation
  • the predetermined rotation angle needs to be set wide so that the angle is within the range, and as a result, the amount of warpage of the wafer may increase.
  • An object of the present invention is to provide a method for slicing a semiconductor single crystal ingot that not only can reduce the amount of warpage of a wafer but also can accurately control the amount of warpage of the wafer to a desired amount.
  • a cylindrical semiconductor single crystal ingot is bonded and held by a holder while being rotated by a predetermined rotation angle about a crystal axis of an ingot different from the central axis of the cylinder of the ingot.
  • the predetermined amount when the ingot is bonded and held by the holder so that the warpage amount of the wafer sliced by the cutting device becomes a predetermined amount.
  • a tilt angle of the holder by the cutting device is determined.
  • the ingot is centered on the crystal axis of the ingot different from the central axis of the cylinder. Then, the ingot is bonded and held by the holding tool in a state where the ingot is rotated by a predetermined rotation angle around the crystal axis. At this time, since the predetermined rotation angle around the crystal axis and the tilt angle of the holder by the cutting device were determined so that the warpage amount of the wafer sliced by the cutting device was a predetermined amount, the ingot was The amount of warping of the wafer after slicing can be accurately controlled to a desired amount.
  • a second aspect of the present invention is an invention based on the first aspect, and further obtains a correlation with respect to a change in the amount of warpage of the wafer with respect to a change in the predetermined rotation angle in advance by experiment, and calculates the predetermined rotation angle. It is characterized by determining from this correlation.
  • the correlation between the change in the amount of warpage of the wafer with respect to the change in the predetermined rotation angle is obtained in advance by experiment, and the predetermined rotation angle is determined from this correlation.
  • the amount of warping of the wafer after slicing can be controlled with a desired amount with high accuracy.
  • a third aspect of the present invention is an invention based on the first aspect, and further includes a predetermined time when the ingot is bonded and held by a holder so that the amount of warpage of the wafer sliced by the cutting device is minimized.
  • the rotation angle is determined.
  • the predetermined rotation angle around the crystal axis of the ingot is determined so that the amount of warpage of the wafer sliced by the cutting device is minimized, the ingot is sliced. The amount of warpage of the subsequent wafer can be reduced.
  • a fourth aspect of the present invention is the invention based on the first aspect, wherein the rotation reference portion is further formed in the ingot, and when the perpendicular line drawn from the crystal axis of the ingot to the rotation reference portion is used as the reference line,
  • the predetermined rotation angle with respect to the reference line is within a range of 45 to 55 degrees, 125 to 135 degrees, 225 to 235 degrees, and 305 to 315 degrees.
  • a perpendicular drawn from the crystal axis of the ingot to the rotation reference portion is used as a reference line, and predetermined rotation angles with respect to this reference line are 45 to 55 degrees, 125 to 135 degrees, 225 to By setting it within the range of 235 degrees and any of 305 to 315 degrees, the warpage amount of the wafer after cutting the ingot becomes almost a desired amount.
  • a perspective view (a) of the wafer showing a mechanism in which the cleavage plane appears in the cutting direction during the cutting of the ingot by the wire and the wire is displaced in the direction of the cleavage plane, and a side view (b) of the wafer after cutting in which a large warp has occurred.
  • a perspective view (a) of a wafer showing a mechanism in which a cleavage plane does not appear in the cutting direction during the cutting of the ingot by the wire and the wire advances straight in the cutting direction, and a side view (b) of the wafer after cutting without warping It is. It is a front view of an ingot which shows that the cleavage surface of an ingot is parallel to the wire mark of the ingot surface.
  • It is a block diagram of the ingot which shows the state where the center axis
  • a wire saw device 16 is used to slice and cut the silicon single crystal ingot 13.
  • a wire saw device 16 as a cutting device is provided below the first and second main rollers 11 and 12, and the first and second main rollers 11 and 12 disposed in the same horizontal plane with the central axes parallel to each other.
  • the single sub-roller 17 provided at an intermediate position between the first and second main rollers 11 and 12 and the first and second main rollers 11 and 12 and the single sub-roller 17 are wound around and stretched.
  • a lifting device 19 that lifts and lowers the holding tool 14 (FIGS. 1 and 2).
  • the outer peripheral surfaces of the first and second main rollers 11 and 12 and the single sub-roller 17 are spaced at predetermined intervals in the axial direction of the rollers 11, 12 and 17, that is, the thickness of the wafer to be sliced.
  • a plurality of ring grooves (not shown) extending in the circumferential direction are formed at intervals in the axial direction of the rollers 11, 12, and 17.
  • the wire 18 is one long piece wound around the feeding bobbin 21 (FIG. 2), and the wire 18 fed from the feeding bobbin 21 is connected to the first and second main rollers 11 and 12 in a single manner.
  • the rollers 11, 12, and 17 are spirally wound around the rollers 11, 12, and 17 so as to be sequentially accommodated from the ring grooves on one end side to the ring grooves on the other end side of the sub-roller 17. After being stretched, it is configured to be wound on a winding bobbin 22 (FIG. 2).
  • the holder 14 includes a slicing base 14a bonded to the ingot 13 and a work plate 14b that holds the slicing base 14a.
  • the slicing base 14a is formed of the same material as the ingot 13, or glass, ceramic, carbon, resin, or the like, but carbon, resin, or the like is often used in consideration of cost and ease of molding.
  • the adhesive epoxy resin, thermoplastic wax or the like is used, and the work plate 14b is mainly formed of SUS.
  • the lifting device 19 includes a support member 19a provided so as to extend in the vertical direction, and a horizontal member 19b attached to the support member 19a so as to be lifted and lowered and holding the holding tool 14 on the lower surface of the tip.
  • the ingot 13 bonded to the holder 14 is configured to be movable up and down by the lifting device 19.
  • the crystal orientation of the ingot 13 varies somewhat, and does not necessarily coincide with the central axis of the cylinder of the ingot 13. Therefore, when the slicing base 14a is bonded in accordance with the direction of the central axis of the cylinder of the ingot 13 and attached to the wire saw device 16 for slicing, the cut surface of the wafer cut out from the ingot 13 does not coincide with the crystal lattice plane. This causes a problem that the characteristics of the wafer vary. As one method for solving this problem, a method using a gonio angle setting device 19c is known.
  • the gonio angle setting device 19 c is attached to the lower surface of the horizontal member 19 b, and can adjust the attachment angle of the holding tool 14 attached to the wire saw device 16 in a plane orthogonal to the wire 18.
  • the gonio angle setting device 19c includes a fixed member 191 and a movable member 192, as shown in FIG.
  • the fixing member 191 is attached to the horizontal member 19b.
  • the lower surface of the fixing member 191 is a concave curved surface, and the concave curved surface is a cylindrical concave curved surface having an arc-shaped cross section in a plane orthogonal to the traveling direction of the wire 18.
  • a movable member 192 is attached to the lower surface of the fixed member 191.
  • the movable member 192 has a convex curved surface that follows the concave curved surface formed on the lower surface of the fixed member 191 on the upper surface, and when the movable member 192 is moved relative to the fixed member 191, a surface orthogonal to the traveling direction of the wire 18.
  • the movable member 192 can be adjusted in the vertical direction.
  • the vertical shaft 193 is rotated to change the screwing position of the feed screw formed at the center.
  • the movable member 192 moves along the curved surface of the fixed member 191 in a plane orthogonal to the wire 18, and the vertical position adjustment is possible.
  • the traveling direction of the wire 18 can be adjusted so that the crystal orientation of the ingot 13 is in an appropriate direction within a plane orthogonal to the wire 18.
  • a method of slicing the silicon single crystal ingot 13 using the wire saw device 16 configured as described above will be described.
  • the wire 18 is wound and stretched between the first and second main rollers 11 and 12 and the single sub-roller 17.
  • the wires 18 that are horizontally stretched between the first and second main rollers 11 and 12 become horizontal due to the rotation of the first and second main rollers 11 and 12 and the single sub-roller 17.
  • the work plate 14b to which the ingot 13 and the slicing base 14a are bonded is mounted on a gonio angle setting device 19c provided on the lower surface of the front end of the horizontal member 19b of the lifting device 19 by fixing means such as bolting.
  • a predetermined rotation angle is rotated around the center axis of the cylinder of the ingot 13 and bonded.
  • the predetermined rotation angle is determined so that the warpage amount of the wafer 23 obtained by slicing by the wire saw device 16 becomes a predetermined amount.
  • a perpendicular line extending from the crystal axis 13b of the ingot 13 to the orientation flat 13c is defined as a reference line 13d, and predetermined rotation angles ⁇ (FIGS. 5 and 6) with respect to the reference line 13d are 45 to 55 degrees, 125 to 135 degrees, It is preferably set within the range of 225 to 235 degrees and 305 to 315 degrees.
  • the predetermined rotation angle ⁇ with respect to the reference line 13d is within a range of 45 to 55 degrees or 305 to 315 degrees in order to avoid the orientation flat 13c. It is preferable to set to.
  • the reason why the predetermined rotation angle ⁇ with respect to the reference line 13d is limited to the above range is that the wire 18 is likely to be displaced in the direction of the cleavage surface 13e of the ingot 13, and the wafer obtained by slicing the ingot 13 This is because the variation in the amount of warpage of 23 increases.
  • FIG. 9A the central axis 13a of the cylinder coincides with the crystal axis 13b, and the central axis 13a of the cylinder. Is almost the same as the crystal axis 13b (FIG. 4 (P1-P2), FIG. 9B).
  • the inclination angle between the central axis 13a of the cylinder of the ingot 13 and the crystal axis 13b of the ingot 13 is about 3 degrees at the maximum.
  • the surface of the sliced wafer 23 is required to be a plane perpendicular to the crystal axis 13b of the ingot 13 (FIG. 9C).
  • the crystal axis 13b of the ingot 13 is displaced from the longitudinal direction of the slice table 14a.
  • the horizontal direction (XZ plane in FIG. 4) corrects the bonding direction between the slicing base 14a and the work plate 14b, and bonds the crystal axis 13b of the ingot 13 within the YZ plane in FIG.
  • the ingot 13 passes through the central axes of the first and second main rollers 11 and 12 above the wire 18 horizontally stretched between the first and second main rollers 11 and 12.
  • the crystal axis 13b of the ingot 13 is moved between the vertical lines so as to be substantially parallel to the central axes of the first and second main rollers 11 and 12 (FIGS. 1 and 2).
  • the vertical plane including the crystal axis 13b of the ingot 13 is orthogonal to the extending direction of the wire 18 between the first and second main rollers 11 and 12 (FIG. 9C).
  • the fixing angle of the holder 14 is adjusted by the gonio angle setting device 19c for fixing the holder 14 so that the crystal axis 13b is parallel to the central axes of the first and second main rollers 11 and 12.
  • the crystal axis 13b of the ingot 13 is orthogonal to a plane formed by the wire 18 between the first and second main rollers 11 and 12 and the cutting direction of the ingot 13 by the wire 18.
  • the ingot 13 is lowered in the vertical direction and moved to a position crossing the wire 18 moving in the horizontal direction, thereby slicing the ingot 13.
  • the curvature amount of the wafer 23 after slicing the ingot 13 can be accurately controlled to a desired amount.
  • the warpage amount of the wafer 23 obtained by slicing the ingot 13 may be different.
  • FIGS. 7A and 8A even if the cleavage plane 13e of the ingot 13 is parallel to the wire mark 13f on the surface of the ingot 13, the cleavage plane 13e of the ingot 13 is a crystal of the ingot 13 as shown in FIG. 7B. There is a case where it is inclined with respect to the axis 13b and a case where it is parallel to the crystal axis 13b of the ingot 13 as shown in FIG. 8B.
  • the cleavage plane 13e of the ingot 13 is parallel to the wire mark 13f on the surface of the ingot 13 (FIG. 7A)
  • the cleavage plane 13e of the ingot 13 is relative to the crystal axis 13b of the ingot 13 as shown in FIG. 7B. If it is inclined, the wafer 23 obtained by slicing the ingot 13 warps as shown in the side view (b) of FIG.
  • the cleavage plane 13e of the ingot 13 has a crystal axis 13b of the ingot 13 as shown in FIG.
  • the wafer 23 obtained by slicing the ingot 13 does not warp as shown in the side view (b) of FIG. Even if the cleaved surface 13e of the ingot 13 is not parallel to the crystal axis 13b of the ingot 13 as shown in FIG. 8B, the wafer 23 obtained by slicing is less likely to warp if the angle is close to parallel. .
  • the predetermined rotation angle around the crystal axis 13b of the ingot 13 may be determined so that the warpage amount of the wafer 23 obtained by slicing the ingot 13 by the wire saw device 16 is minimized.
  • a perpendicular line extending from the crystal axis 13b to the orientation flat 13c is defined as a reference line 13d, and a predetermined rotation angle ⁇ with respect to the reference line 13d (FIGS. 5 and 6).
  • the amount of warpage of the wafer 23 after slicing the ingot 13 can be reduced.
  • a silicon single crystal ingot is used as the semiconductor single crystal ingot.
  • a silicon carbide (SiC) single crystal ingot, a gallium arsenide (GaAs) single crystal ingot, a sapphire single crystal ingot, or the like may be used.
  • a predetermined rotation angle centered on the crystal axis of the ingot is determined using the perpendicular line extending from the crystal axis of the ingot to the orientation flat as a reference line, but the axis of rotation is lowered from the crystal axis of the ingot to the notch.
  • a predetermined rotation angle around the crystal axis of the ingot may be determined using the perpendicular as a reference line.
  • a predetermined rotation angle around the ingot crystal axis is determined with a perpendicular line from the crystal axis of the ingot to the rotation reference part as a reference line. Also good.
  • Example 1> As shown in FIGS. 1 and 2, a cylindrical silicon single crystal ingot 13 having a diameter of 150 mm and a crystal axis of ⁇ 111> was prepared. The ingot 13 and the slicing base 14a were bonded in a state where the ingot 13 was rotated by a predetermined rotation angle around the central axis 13a of the cylinder. Further, the slicing base 14a and the work plate 14b were bonded so that the bonding direction in the horizontal direction (XZ plane in FIG. 4) was corrected so that the crystal axis of the ingot 13 was in the YZ plane in FIG.
  • the holder 14 to which the ingot 13 is bonded is fixedly attached to the gonio angle setting device 19c, and the gonio angle setting device 19c causes the crystal axis 13b to be parallel to the central axes of the first and second main rollers 11 and 12.
  • the fixing angle of the holder 14 was adjusted.
  • the crystal axis 13b of the ingot 13 was detected by the angle of X-rays that were irradiated and reflected on the crystal plane. Further, a predetermined rotation angle when the ingot 13 was bonded to the holder 14 was determined. Further, the predetermined rotation angle is defined as a rotation angle ⁇ (FIGS. 5 and 6) with respect to the reference line 13d when a perpendicular line extending from the crystal axis 13b of the ingot 13 to the orientation flat 13c is used as the reference line 13d. Specifically, the ingot 13 is disposed above the wire 18 that is horizontally stretched between the first and second main rollers 11 and 12 of the wire saw device 16, and between the first and second main rollers 11 and 12.
  • the crystal axis 13b of the ingot 13 was moved so as to be substantially parallel to the central axes of the first and second main rollers 11 and 12 between vertical lines passing through the central axes (FIGS. 1 and 2). At this time, the vertical plane including the crystal axis 13b of the ingot 13 was orthogonal to the extending direction of the wire 18 between the first and second main rollers 11 and 12 (FIG. 9C).
  • the holder 14 to which the ingot 13 is bonded is attached and fixed to the gonio angle setting device 19c, and the gonio angle setting device 19c causes the crystal axis 13b to be parallel to the central axes of the first and second rollers 11 and 12.
  • the fixing angle of the holder 14 was adjusted.
  • the ingot 13 was lowered in the vertical direction and moved to a position crossing the wire 18 moving in the horizontal direction, whereby the ingot 13 was sliced to produce a wafer 23.
  • the predetermined rotation angle ⁇ was adjusted to 45 to 55 degrees, and the ingot 13 was sliced in the same manner as described above to produce a wafer 23.
  • These wafers 23 were referred to as Example 1.
  • ⁇ Test 1 and evaluation> The warpage amount of the wafers of Example 1 and Comparative Example 1 was measured.
  • the amount of warpage of the wafer is assumed to be a plane passing through 3 points on the back surface of the wafer 3 mm inward from the outer peripheral edge of the wafer and taken at 120 degree intervals around the crystal axis of the wafer.
  • the maximum value of the wafer warpage measured from the plane was taken. The result is shown in FIG.
  • Example 1 As is clear from FIG. 10, in Comparative Example 1, although the amount of warpage of the wafer was small within the range of the predetermined rotation angle, the amount of warpage of the wafer was large outside the range of the predetermined rotation angle. In Example 1, the amount of warpage of the wafer was all reduced by adjusting the rotation angle ⁇ to 45 to 55 degrees.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PCT/JP2018/007074 2018-02-27 2018-02-27 半導体単結晶インゴットのスライス方法 WO2019167100A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2018/007074 WO2019167100A1 (ja) 2018-02-27 2018-02-27 半導体単結晶インゴットのスライス方法
CN201880088365.0A CN111801771B (zh) 2018-02-27 2018-02-27 半导体单晶锭的切片方法
JP2020503110A JP6923067B2 (ja) 2018-02-27 2018-02-27 半導体単結晶インゴットのスライス方法
TW108102372A TWI750447B (zh) 2018-02-27 2019-01-22 半導體單結晶鑄錠的切片方法

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PCT/JP2018/007074 WO2019167100A1 (ja) 2018-02-27 2018-02-27 半導体単結晶インゴットのスライス方法

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CN113771247A (zh) * 2021-09-07 2021-12-10 麦斯克电子材料股份有限公司 一种12寸半导体晶圆的切割方法
CN113787636A (zh) * 2021-07-09 2021-12-14 麦斯克电子材料股份有限公司 一种用于12寸半导体晶圆的手动粘棒方法

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JP2014195025A (ja) * 2013-03-29 2014-10-09 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶インゴットのスライス方法
JP2017024145A (ja) * 2015-07-27 2017-02-02 信越半導体株式会社 ワークホルダー及びワークの切断方法

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CN113787636A (zh) * 2021-07-09 2021-12-14 麦斯克电子材料股份有限公司 一种用于12寸半导体晶圆的手动粘棒方法
CN113787636B (zh) * 2021-07-09 2022-05-27 麦斯克电子材料股份有限公司 一种用于12寸半导体晶圆的手动粘棒方法
CN113771247A (zh) * 2021-09-07 2021-12-10 麦斯克电子材料股份有限公司 一种12寸半导体晶圆的切割方法

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