WO2019159441A1 - 光波長変換装置 - Google Patents
光波長変換装置 Download PDFInfo
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- WO2019159441A1 WO2019159441A1 PCT/JP2018/040537 JP2018040537W WO2019159441A1 WO 2019159441 A1 WO2019159441 A1 WO 2019159441A1 JP 2018040537 W JP2018040537 W JP 2018040537W WO 2019159441 A1 WO2019159441 A1 WO 2019159441A1
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- Prior art keywords
- wavelength conversion
- light
- conversion member
- light wavelength
- joint
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
- F21V7/28—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings
- F21V7/30—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings the coatings comprising photoluminescent substances
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/008—Mountings, adjusting means, or light-tight connections, for optical elements with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
- G02B7/181—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
- G02B2207/113—Fluorescence
Definitions
- the present disclosure relates to an optical wavelength conversion device.
- white light is generated by converting the wavelength of blue light, such as light emitting diodes (LEDs, Light Emitting Diodes) and semiconductor lasers (LDs, Laser Diodes), using phosphors that are light wavelength conversion members. Have gained.
- LEDs Light emitting diodes
- LDs Laser Diodes
- the phosphor generates heat when irradiated with light.
- temperature quenching occurs in which the fluorescence function such as the intensity of light emitted from the phosphor (ie, emission intensity: fluorescence intensity) is reduced. Therefore, in order to efficiently emit the phosphor, it is necessary to exhaust heat from the phosphor to the outside.
- an optical wavelength conversion device in which a heat dissipation member is joined to an optical wavelength conversion member using solder is known (see Patent Document 1).
- the melting point of the solder is 200 ° C. or less
- the solder is remelted by the heat generation of the phosphor due to the laser irradiation, and the bonding strength between the heat dissipation member and the optical wavelength conversion member is lowered.
- defects such as detachment and breakage of the light wavelength conversion member from the heat dissipation member occur.
- the occurrence of defects due to remelting of solder is suppressed.
- One aspect of the present disclosure preferably provides an optical wavelength conversion device that can efficiently exhaust heat of the optical wavelength conversion member while maintaining the bonding strength between the optical wavelength conversion member and the heat dissipation member.
- One aspect of the present disclosure includes: a light wavelength conversion member configured to convert the wavelength of incident light; a heat dissipation member that has better heat dissipation than the light wavelength conversion member; and a light wavelength conversion member and a heat dissipation member. It is an optical wavelength converter provided with the junction part to join.
- the light wavelength conversion member includes a plate-shaped ceramic phosphor and a reflective film disposed on the surface of the ceramic phosphor on the heat dissipation member side.
- the thermal conductivity of the joint is 120 W / mK or more.
- the melting point of the joint is 240 ° C. or higher.
- the heat transfer performance of the junction part used as the thermal radiation path between an optical wavelength conversion member and a thermal radiation member can be made high, and the waste heat from an optical wavelength conversion member is performed more efficiently. be able to.
- the joined portion for joining the light wavelength conversion member and the heat radiating member is hardly melted. Therefore, high heat resistance and bonding strength can be maintained up to the high output range of the laser. As a result, the heat radiation path between the light wavelength conversion member and the heat radiation member can be maintained even in a high output range, and the heat exhausted from the light wavelength conversion member can be efficiently performed.
- the joint may be composed of only gold, silver, copper, or a combination thereof. According to such a configuration, it is possible to easily and reliably form a joint that can efficiently exhaust heat from the light wavelength conversion member.
- the joint may have pores.
- the porosity of the joint may be 40% or less. According to such a configuration, the thermal expansion difference between the heat radiating member and the light wavelength conversion member is reduced while maintaining the heat transfer property of the joint, so that it is possible to suppress damage to the joint due to thermal shock. it can.
- the average thickness of the bonding region disposed between the light wavelength conversion member and the heat dissipation member in the bonding portion may be 1 ⁇ m or more. According to such a configuration, the bonding strength between the light wavelength conversion member and the heat dissipation member can be further increased.
- the average thickness of the bonding region disposed between the light wavelength conversion member and the heat dissipation member in the bonding portion is the total thickness of the average thickness of the ceramic phosphor and the average thickness of the bonding region. It may be 50% or less. According to such a structure, it can suppress that a joining area
- One aspect of the present disclosure may further include a resin layer that covers at least a part of a surface of the joint that is not joined to the light wavelength conversion member and the heat dissipation member. According to such a configuration, oxidation, sulfidation, and the like at the joint interface of the joint can be suppressed. As a result, the durability of the optical wavelength conversion device can be improved.
- the resin layer may include a fluoride-based resin as a main component. According to such a configuration, since the permeability of gases such as O 2 , H 2 S, SO 2 and moisture of the resin layer can be reduced, the durability of the optical wavelength conversion device can be improved more reliably.
- the heat dissipating member may have at least one notch disposed on a surface to be joined to the joint. According to such a configuration, it is possible to suppress the stress generated due to the difference in thermal expansion between the light wavelength conversion member and the heat dissipation member. Therefore, joint strength improves and heat dissipation improves. Moreover, since the thermal stress which generate
- the light wavelength conversion member may be rounded at least one corner as viewed from the thickness direction. According to such a configuration, it is possible to suppress the stress generated due to the difference in thermal expansion between the light wavelength conversion member and the heat dissipation member. Therefore, joint strength improves and heat dissipation improves. Moreover, the stress generated in the light wavelength conversion member during laser irradiation tends to be uniform in the surface direction. Therefore, since the force which generate
- FIG. 1A is a schematic plan view of the optical wavelength conversion device according to the embodiment
- FIG. 1B is a schematic cross-sectional view taken along line IB-IB in FIG. 1A. It is typical sectional drawing of the optical wavelength converter of embodiment different from FIG. 1B. It is typical sectional drawing of the optical compound apparatus provided with the optical wavelength converter of embodiment. It is explanatory drawing of a light source unit.
- FIG. 5A is a schematic cross-sectional view of an optical wavelength conversion device of an embodiment different from FIGS. 1B and 2
- FIG. 5B is an optical wavelength of an embodiment different from FIGS. 1A, 1 ⁇ / b> B, 2, and 5 ⁇ / b> A. It is typical sectional drawing of a converter.
- FIG. 6A is a schematic plan view of an optical wavelength conversion device of an embodiment different from FIGS. 1A and 1B, FIG. 2 and FIGS. 5A and 5B, and FIG. 6B is a schematic view taken along line VIB-VIB in FIG. 6A.
- FIG. 6A is a schematic plan view of an optical wavelength conversion device of an embodiment different from FIGS. 1A and 1B, FIG. 2 and FIGS. 5A and 5B, and FIG. 6B is a schematic view taken along line VIB-VIB in FIG. 6A.
- An optical wavelength conversion device 1 shown in FIGS. 1A and 1B includes an optical wavelength conversion member 2, a heat radiating member 3, and a joint portion 4.
- the light wavelength conversion member 2 is a member that converts the wavelength of incident light.
- the light wavelength conversion member 2 includes a plate-shaped ceramic phosphor 21, a reflection film 22, an antireflection film 23, and an intermediate film 24.
- the ceramic phosphor 21 is a ceramic sintered body having a fluorescent phase mainly composed of fluorescent crystal particles and a translucent phase mainly composed of translucent crystal particles.
- the “fluorescent phase” is a phase mainly composed of fluorescent crystal particles
- the “translucent phase” is a crystal particle having a translucent property, more specifically, a crystal having a composition different from that of the fluorescent phase crystal particles. It is a phase mainly composed of particles.
- the fluorescent phase contains 50% by volume or more, preferably 90% by volume or more of fluorescent crystal particles.
- the light-transmitting phase contains light-transmitting crystal particles of 50% by volume or more, preferably 90% by volume or more.
- the light transmitting phase for example, alumina, glass, or the like can be used.
- the light transmitting phase may be a single crystal.
- Each crystal particle of the ceramic sintered body constituting the ceramic phosphor 21 and its grain boundary may contain a translucent phase and inevitable impurities other than the translucent phase.
- the material of the ceramic phosphor 21 is not particularly limited.
- the crystal particles of the light transmitting phase have a composition represented by the chemical formula (1) Al 2 O 3
- the crystal particles of the fluorescent phase are represented by the chemical formula (2) A 3.
- B 5 O 12: may have a composition represented by Ce (i.e. garnet structure).
- a 3 B 5 O 12 : Ce indicates that Ce is dissolved in A 3 B 5 O 12 and a part of the element A is substituted with Ce.
- the crystal particles in the fluorescent phase exhibit fluorescence characteristics due to the solid solution of Ce.
- the A element in the chemical formula (1) and the B element in the chemical formula (2) are each composed of at least one element selected from the following element group.
- A Sc, Y, lanthanoid (excluding Ce) (However, G may further contain Gd)
- the ceramic sintered body has excellent thermal conductivity, heat generated by laser light irradiation can be easily discharged to the heat radiating member 3. Therefore, the fluorescence function can be maintained even in the high output range of the laser.
- the ceramic phosphor 21 has a single composition, light scattering does not occur, so that the angle dependency of the light color increases, and the light color may be uneven.
- the thermal conductivity is lowered, and there is a possibility that temperature quenching may occur without sufficient heat dissipation.
- the average thickness of the ceramic phosphor 21 (that is, the average distance from the upper surface to the lower surface) is preferably 100 ⁇ m or more and 500 ⁇ m or less.
- the reflection film 22 is disposed on the lower surface of the ceramic phosphor 21 (that is, the surface on the heat dissipation member 3 side).
- the reflection film 22 reflects light generated inside the ceramic phosphor 21 so that the light is efficiently emitted to the outside of the light wavelength conversion member 2. Thereby, the emitted light intensity of the light wavelength conversion member 2 improves.
- Examples of the material of the reflective film 22 include, in addition to metals such as metallic aluminum and silver, niobium oxide, titanium oxide, lanthanum oxide, tantalum oxide, yttrium oxide, gadolinium oxide, tungsten oxide, hafnium oxide, aluminum oxide, silicon nitride, and the like. Can be adopted.
- metals such as metallic aluminum and silver, niobium oxide, titanium oxide, lanthanum oxide, tantalum oxide, yttrium oxide, gadolinium oxide, tungsten oxide, hafnium oxide, aluminum oxide, silicon nitride, and the like. Can be adopted.
- the average thickness of the reflective film 22 is preferably 0.1 ⁇ m or more and 2 ⁇ m or less.
- the reflective film 22 may have a single layer structure or a multilayer structure.
- the antireflection film 23 is disposed on the upper surface of the ceramic phosphor 21 (that is, the surface opposite to the heat dissipation member 3).
- the antireflection film 23 is an antireflection coating (AR coating) for suppressing light reflection on the ceramic phosphor 21.
- the antireflection film 23 allows the ceramic phosphor 21 to efficiently absorb light. Moreover, the light generated inside the ceramic phosphor 21 can be efficiently extracted to the outside. As a result, the light emission intensity of the light wavelength conversion member 2 is improved.
- niobium oxide, titanium oxide, tantalum oxide, aluminum oxide, zirconium oxide, silicon oxide, aluminum nitride, silicon nitride, magnesium fluoride, etc. can be adopted.
- the average thickness of the antireflection film 23 is preferably 0.01 ⁇ m or more and 1 ⁇ m or less.
- the antireflection film 23 may have a single layer structure or a multilayer structure.
- the intermediate film 24 is disposed on the lower surface of the reflective film 22 (that is, the surface opposite to the ceramic phosphor 21 side).
- the intermediate film 24 is disposed between the reflective film 22 and a joint 4 described later. That is, the bonding portion 4 is bonded to the intermediate film 24 in the light wavelength conversion member 2. Due to the intermediate film 24, the bonding property between the bonding portion 4 and the light wavelength conversion member 2 is improved.
- the intermediate film 24 has a metal film and an oxide film.
- the material of the metal film for example, gold, silver, nickel, etc. can be adopted.
- the material of the oxide film for example, aluminum oxide, titanium oxide or the like can be used.
- the intermediate film 24 preferably has a nickel film as a metal film and an aluminum oxide film as an oxide film.
- the average thickness of the intermediate film 24 is preferably 0.01 ⁇ m or more and 1 ⁇ m or less.
- the light wavelength conversion member 2 may have at least one corner 12 as viewed from the thickness direction.
- the stress generated in the light wavelength conversion member 2 during laser irradiation tends to be uniform in the surface direction. Therefore, since the force which generate
- the heat radiating member 3 is a member that is more excellent in heat dissipation than the light wavelength conversion member 2.
- the heat radiating member 3 is attached to the light wavelength conversion member 2 via the joint portion 4.
- the heat radiating member 3 promotes the exhaust of heat generated by the laser light irradiation in the ceramic phosphor 21. Thereby, the fluorescence function of the ceramic phosphor 21 in the high output range is maintained.
- the thermal radiation member 3 may have the main-body part comprised with the metal, and the oxide film formed in the surface of a main-body part. This oxide film increases the bonding strength with the bonding portion 4.
- the heat radiating member 3 is configured in a plate shape, for example. Moreover, the heat radiating member 3 may have a plate-shaped part and at least one heat radiating fin protruding from the plate-shaped part.
- the average thickness of the plate-like portion of the heat radiating member 3 is preferably 0.1 mm or greater and 5 mm or less.
- Friction stir welding may be used as a method for joining the heat radiation fin and the plate-like portion.
- FSW is a bonding method in which the materials to be bonded are integrated, and an increase in thermal resistance at the bonding interface can be suppressed. Therefore, reduction of the heat dissipation effect can be suppressed.
- the joint 4 joins the light wavelength conversion member 2 and the heat dissipation member 3.
- the joint portion 4 is disposed between the lower surface of the intermediate film 24 of the light wavelength conversion member 2 and the upper surface of the heat dissipation member 3 (that is, the surface on the light wavelength conversion member 2 side). The surfaces are joined.
- the melting point of the joint 4 is 240 ° C. or higher. If the melting point of the bonded portion 4 is less than 240 ° C., the bonded portion 4 is melted by heat from the light wavelength conversion member 2 in the high-power region of the laser, and defects such as detachment and breakage occur.
- fusing point of the junction part 4 300 degreeC or more is preferable, 500 degreeC or more is more preferable, and 800 degreeC or more is further more preferable.
- the thermal conductivity of the joint 4 is 120 W / mK or more. If the thermal conductivity of the joint 4 is less than 120 W / mK, there may be a shortage in terms of more effectively exhausting heat from the light wavelength conversion member 2, and the fluorescence function is reduced in the high output region of the laser. There is a risk.
- a heat conductivity of the junction part 4 150 W / mK or more is preferable.
- the thermal conductivity of the joint 4 can be measured by, for example, a pulsed light thermoreflectance method. Specifically, the optical wavelength conversion device 1 is cut obliquely with respect to the incident surface, and the joint portion 4 is exposed. The exposed portion is irradiated with pulsed light and laser light, and the reflected laser light is measured, whereby the thermal resistance of the joint 4 is obtained. The thermal conductivity is calculated from the obtained thermal resistance and the area and thickness of the joint 4.
- the material of the joint 4 is not particularly limited as long as at least the melting point of the joint 4 can satisfy the above conditions. However, it is more preferable that the melting point and thermal conductivity of the joint 4 satisfy the above conditions. Furthermore, in order to satisfy the above conditions, the joint 4 may be composed of only gold, silver, copper, or a combination thereof.
- the joint 4 may have pores. Since the joining part 4 has pores, the difference in thermal expansion between the heat radiation member 3 and the light wavelength conversion member 2 is alleviated, so that damage to the joining part 4 due to thermal shock can be suppressed.
- the joint 4 having pores can be obtained, for example, by sintering the above-described metal nanoparticles.
- the nanoparticle here is a group of particles having an average particle diameter of several nanometers to several micrometers including particles of nanosize order.
- the sintered compact of a metal nanoparticle is preferable.
- pores are formed by voids between nanoparticles bonded to each other by sintering.
- the maximum pore width (that is, the maximum pore diameter) is preferably 5 ⁇ m or less.
- the porosity of the joint 4 is preferably 1% or more and 40% or less. If the porosity is less than 1%, the effect of mitigating the difference in thermal expansion between the heat dissipation member 3 and the light wavelength conversion member 2 may not be obtained. On the other hand, if the porosity exceeds 40%, the exhaust heat efficiency of the optical wavelength conversion member 2 may be reduced as the heat conductivity of the joint 4 is reduced.
- the “porosity” is, for example, the ratio of the area occupied by pores in the observation cross section obtained by observing the cross section of the joint 4 with a scanning electron microscope (SEM) (that is, the porosity relative to the total area of the pores and the material layer) Of the total area).
- SEM scanning electron microscope
- the upper surface of the bonding portion 4 (that is, the surface on the light wavelength conversion member 2 side) is bonded to the entire lower surface of the light wavelength conversion member 2.
- the junction part 4 is arrange
- the joint portion 4 may be disposed in a range larger than the lower surface of the light wavelength conversion member 2 or may be disposed so as to cover the entire upper surface of the heat dissipation member 3. Moreover, the junction part 4 may be arrange
- the average thickness of the bonding region disposed between the light wavelength conversion member 2 and the heat radiation member 3 in the bonding portion 4 is preferably 1 ⁇ m or more. When the average thickness of the bonding region is less than 1 ⁇ m, the bonding strength by the bonding portion 4 may be insufficient. Moreover, there is a possibility that a sufficient heat radiation path between the light wavelength conversion member 2 and the heat radiation member 3 cannot be secured.
- the average thickness of the bonding region is preferably 50% or less of the total thickness of the average thickness of the ceramic phosphor 21 and the average thickness of the bonding region.
- the average thickness of the joining region exceeds 50% of the total thickness, the distance from the ceramic phosphor 21 to the heat radiating member 3 increases with respect to the thickness of the ceramic phosphor 21, and the light wavelength with respect to the heat radiating member 3 is reduced. It becomes difficult to transfer the heat generated from the conversion member 2 faster, and the exhaust heat efficiency may be reduced.
- the optical composite device 10 shown in FIG. 3 includes an optical wavelength conversion device 1 and a package 5 in which the optical wavelength conversion device 1 is accommodated.
- Package 5 is a box-shaped container or a plate-shaped substrate.
- the package 5 is mainly composed of ceramics such as alumina.
- the “main component” means a component that is contained, for example, by 80% by mass or more.
- the package 5 may be provided with a light emitting element mounting region for mounting a light emitting element such as an LED or an LD.
- the optical composite device 10 is used in the light source unit 20 shown in FIG.
- the light source unit 20 includes an optical composite device 10, a plurality of known blue laser oscillators (that is, a first blue laser oscillator 27 and a second blue laser oscillator 29) including a light emitting element, a dichroic mirror 25, and a lens 26. And.
- the first blue light B1 is irradiated from the first blue laser oscillator 27 to the light wavelength conversion device 1 in the right direction of FIG.
- the first blue light B1 is wavelength-converted and reflected by the light wavelength conversion device 1, and is output as yellow light Y in the left direction of FIG.
- the yellow light Y is reflected by the dichroic mirror 25 inclined by 45 ° with respect to the horizontal direction in FIG.
- the second blue light B2 irradiated upward from FIG. 4 toward the lens 26 from the second blue laser oscillator 29 passes through the dichroic mirror 25 and is output to the lens 26 as it is.
- the lens 26 the first blue light B1 and the yellow light Y are mixed to generate white light.
- the light source unit 20 outputs white light from the lens 26 upward in FIG.
- the melting point of the joint 4 is 240 ° C. or higher, the joint 4 that joins the light wavelength conversion member 2 and the heat radiating member 3 even when the temperature of the ceramic phosphor 21 is increased due to laser irradiation. Is difficult to melt. Therefore, high heat resistance and bonding strength can be maintained up to the high output range of the laser. As a result, the heat radiation path between the light wavelength conversion member 2 and the heat radiation member 3 can be maintained even in a high output range, and the heat exhausted from the light wavelength conversion member 2 can be efficiently performed.
- An optical wavelength conversion device 1A shown in FIGS. 5A and 5B includes an optical wavelength conversion member 2, a heat dissipation member 3, a joint portion 4, and a resin layer 6.
- optical wavelength conversion member 2 Since the optical wavelength conversion member 2, the heat radiation member 3, and the joint portion 4 are the same as those of the optical wavelength conversion device 1 in FIGS. 1A and 1B, the same reference numerals are given and description thereof is omitted.
- the resin layer 6 covers (that is, coats) at least a part of the surface of the joint portion 4 that is not joined to the light wavelength conversion member 2 and the heat dissipation member 3.
- the resin layer 6 covers the entire side surface of the joint portion 4 and a part of the side surface of the light wavelength conversion member 2.
- the resin layer 6 also covers a part of the upper surface of the heat dissipation member 3. Specifically, the resin layer 6 in FIG. 5A reaches the side surface of the ceramic phosphor 21 from the upper surface of the heat dissipation member 3.
- the resin layer 6 may cover the entire side surface of the light wavelength conversion member 2. Furthermore, as shown in FIG. 5B, the resin layer 6 may cover a part of the upper surface of the light wavelength conversion member 2 (that is, the upper surface of the antireflection film 23) in addition to the entire side surface of the light wavelength conversion member 2. .
- the main component of the resin layer 6 is preferably a fluoride-based resin.
- a fluoride-based resin By using a fluoride-based resin, permeability of gases such as O 2 , H 2 S, and SO 2 and moisture of the resin layer 6 can be reduced, and oxidation (especially in the case of copper) and sulfurization at the interface of the joint 4. (Especially in the case of silver) can be effectively suppressed.
- the resin layer 6 can suppress oxidation, sulfurization, and the like at the joint interface of the joint portion 4. As a result, the durability of the optical wavelength conversion device 1A can be improved.
- An optical wavelength conversion device 1B shown in FIGS. 6A and 6B includes an optical wavelength conversion member 2, a heat dissipation member 3B, and a joint portion 4.
- optical wavelength conversion member 2 and the joint 4 are the same as those of the optical wavelength conversion device 1 of FIGS. 1A and 1B, the same reference numerals are given and description thereof is omitted.
- the heat dissipating member 3B of the present embodiment has a notch 13 disposed on a surface (that is, an upper surface) to be bonded to the bonding portion 4.
- the notch 13 is an annular groove that is disposed around the optical wavelength conversion member 2 and is recessed on the opposite side to the joint 4.
- the notch 13 is formed so that the inner edge is flush with the side surfaces of the light wavelength conversion member 2 and the joint 4.
- the notch 13 is disposed at a position that does not overlap the optical wavelength conversion member 2 and the joint 4 in the thickness direction. That is, the notch 13 is not joined to the joint 4 and is exposed on the upper surface of the heat dissipation member 3B.
- the notch 13 may be provided at a position overlapping the optical wavelength conversion member 2 and the joint 4. Further, the notch 13 is not limited to an annular shape. Furthermore, the heat radiating member 3 ⁇ / b> B may have a plurality of notches 13.
- the notch 13 of the heat radiating member 3B can suppress the stress generated due to the difference in thermal expansion between the light wavelength conversion member 2 and the heat radiating member 3B. Therefore, joint strength improves and heat dissipation improves. Moreover, since the thermal stress which generate
- the light wavelength conversion member 2 does not necessarily have to have the antireflection film 23 and the intermediate film 24.
- the light wavelength conversion member 2 may have a film or layer other than the ceramic phosphor 21, the reflection film 22, the antireflection film 23, and the intermediate film 24.
- the light wavelength conversion member 2 may have an auxiliary bonding layer disposed between the intermediate film 24 and the bonding portion 4.
- the auxiliary bonding layer is provided for the purpose of improving the bonding strength between the intermediate film 24 and the bonding portion 4 and is formed of, for example, metal.
- Example 1 (Production of ceramic phosphor) Al 2 O 3 (average particle size 0.2 ⁇ m), Y 2 O 3 (average particle size 1.2 ⁇ m), Gd 2 O 3 (average particle size 1.1 ⁇ m), and CeO 2 (average particle size 1.5 ⁇ m) The particles were weighed so that the amount of A 3 B 5 O 12 : Ce was 30% by volume of the entire sintered body.
- the obtained ceramic phosphor was processed into a 16 mm square plate having an average thickness of 200 ⁇ m.
- An antireflection film was formed on the upper surface of the ceramic phosphor, and a reflection film and an intermediate film were formed on the lower surface to obtain a light wavelength conversion member.
- multi-layer coating consisting of SiO 2 layer and the Ta 2 O 5 layer as an antireflection film
- a Ni layer and the Al 2 O 3 layer as an intermediate layer
- the light wavelength conversion member obtained in the above process was cut into 3.5 mm square. Moreover, the copper heat radiating member was cut into a 12 mm square plate having an average thickness of 2 mm.
- Samples 1 to 3 were formed by sintering silver nanoparticles, copper nanoparticles, or mixed particles of silver nanoparticles and copper nanoparticles between the cut light wavelength conversion member and the heat dissipation member. An optical wavelength converter was obtained. Table 1 shows the melting point and thermal conductivity of the joint in each sample.
- Each sample was irradiated with a laser beam having a wavelength of 465 nm (that is, blue LD light) condensed to 1 mm width with a lens. Then, the chromaticity value in the X direction was measured with respect to the light reflected by each sample using a spectral irradiance meter (“CL-500A” manufactured by Konica Minolta). In this measurement, the power density for irradiating the blue LD light was gradually increased from 0 W / mm 2 to 200 W / mm 2 .
- CL-500A spectral irradiance meter
- the output density at which the chromaticity value is 60% or less is determined as the output density at which the temperature quenching occurs, and this output density is the laser output resistance for each sample.
- Example 2 The same light wavelength conversion member and heat dissipation member as in Example 1 were joined with silver nanoparticles and the porosity was changed from that in Example 1 to obtain light wavelength conversion devices of Samples 7-12. Table 1 shows the measurement results of the laser output resistance performance and porosity of each sample.
- Example 3 Al 2 O 3 (average particle size 0.2 ⁇ m), Y 2 O 3 (average particle size 1.2 ⁇ m), Gd 2 O 3 (average particle size 1.1 ⁇ m), CeO 2 (average particle size 1.5 ⁇ m), Particles of Lu 2 O 3 (average particle size 1.1 ⁇ m), Sc 2 O 3 (average particle size 1.2 ⁇ m), and Ga 2 O 3 (average particle size 1.1 ⁇ m) are converted into A 3 B 5 O 12 : The light wavelength conversion devices of Samples 13 to 24 were obtained in the same procedure as in Example 1 except that the amount of Ce was 30% by volume of the entire sintered body and was weighed so as to have the composition shown in Table 1. . Table 1 shows the measurement results of the laser output resistance performance and porosity of each sample.
- Example 4 A light wavelength conversion device of Samples 25 to 30 was obtained in the same procedure as in Example 1 except that the average thickness of the ceramic phosphor and the average thickness in the bonded region of the bonded portion were changed as shown in Table 1.
- Table 1 shows the measurement results of the laser output resistance performance and porosity of each sample.
- the sample 30 was unable to measure the laser output resistance due to insufficient strength of the joint.
- Example 5 A light wavelength conversion device of Sample 31 was obtained in the same procedure as in Example 1 except that the side surface of the joint was covered with a fluorine-based resin layer. Moreover, the light wavelength converter of the sample 32 was obtained in the same procedure as Example 1 except the point which provided the notch in the upper surface of the heat radiating member. Furthermore, a light wavelength conversion device of Sample 33 was obtained in the same procedure as in Example 1 except that the corner portion viewed from the thickness direction of the light wavelength conversion member was subjected to R processing with a radius of 5 mm.
- Example 2 From the results of Example 2, it can be seen that a higher output range can be accommodated by setting the porosity of the joint to 40% or less. Moreover, it can be seen from the results of Example 3 that the ceramic phosphors having various compositions can cope with a high output range.
- the ratio of the average thickness in the bonded region of the bonded portion to the total thickness of the ceramic phosphor and the bonded region (“average thickness ratio of bonded portion” in Table 1) is 50% or less. By doing so, it can be seen that it can cope with a higher output range.
- Example 5 it can be seen from the results of Example 5 that by covering the joint with a resin layer, it is possible to suppress a decrease in laser output resistance after being heated at a high temperature for a long time. It can also be seen that the notch and the R processing improve the bonding strength of the optical wavelength conversion device and improve the laser output resistance.
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Abstract
Description
[1-1.構成]
図1A,1Bに示す光波長変換装置1は、光波長変換部材2と、放熱部材3と、接合部4とを備える。
光波長変換部材2は、入射した光の波長を変換する部材である。光波長変換部材2は、板状のセラミックス蛍光体21と、反射膜22と、反射防止膜23と、中間膜24とを有する。
セラミックス蛍光体21は、蛍光性を有する結晶粒子を主体とする蛍光相と、透光性を有する結晶粒子を主体とする透光相とを有するセラミックス焼結体である。
(但し、Aとして更にGdを含んでいてもよい)
B:Al(但し、Bとして更にGaを含んでいてもよい)
セラミックス蛍光体21として、上記セラミックス焼結体を使用することで、蛍光相と透光相との界面での光の散乱が起き、光の色の角度依存性を減らすことができる。その結果、色の均質性を向上できる。
反射膜22は、セラミックス蛍光体21の下面(つまり、放熱部材3側の面)に配置されている。
反射防止膜23は、セラミックス蛍光体21の上面(つまり、放熱部材3とは反対側の面)に配置されている。
中間膜24は、反射膜22の下面(つまり、セラミックス蛍光体21側とは反対側の面)に配置されている。
放熱部材3は、光波長変換部材2よりも放熱性に優れた部材である。放熱部材3は、接合部4を介して光波長変換部材2に取り付けられている。
接合部4は、光波長変換部材2と放熱部材3とを接合している。本実施形態では、接合部4は、光波長変換部材2の中間膜24の下面と、放熱部材3の上面(つまり、光波長変換部材2側の面)との間に配置され、これら2つの面を接合している。
図3に示す光複合装置10は、光波長変換装置1と、光波長変換装置1が収容されたパッケージ5とを備える。
以上詳述した実施形態によれば、以下の効果が得られる。
[2-1.構成]
図5A,5Bに示す光波長変換装置1Aは、光波長変換部材2と、放熱部材3と、接合部4と、樹脂層6とを備える。
以上詳述した実施形態によれば、以下の効果が得られる。
[3-1.構成]
図6A,6Bに示す光波長変換装置1Bは、光波長変換部材2と、放熱部材3Bと、接合部4とを備える。
以上詳述した実施形態によれば、以下の効果が得られる。
以上、本開示の実施形態について説明したが、本開示は、上記実施形態に限定されることなく、種々の形態を採り得ることは言うまでもない。
以下に、本開示の効果を確認するために行った試験の内容とその評価とについて説明する。
(セラミックス蛍光体の作製)
Al2O3(平均粒径0.2μm)、Y2O3(平均粒径1.2μm)、Gd2O3(平均粒径1.1μm)、及びCeO2(平均粒径1.5μm)の粒子を、A3B5O12:Ce量が焼結体全体の30体積%になるように秤量した。
得られたセラミックス蛍光体を16mm角の平均厚さ200μmの板状に加工した。このセラミックス蛍光体の上面に反射防止膜を形成すると共に、下面に反射膜及び中間膜を形成し、光波長変換部材を得た。
上記工程で得られた光波長変換部材を3.5mm角に切断した。また、銅製の放熱部材を12mm角の平均厚さ2mmの板状に切断した。
各試料に対して、465nmの波長を有するレーザー光(つまり青色LD光)を、レンズで1mm幅まで集光して照射した。そして、各試料にて反射した光に対し、分光放射照度計(コニカミノルタ社製の「CL-500A」)によってX方向の色度値を測定した。この測定の際には、青色LD光を照射する出力密度を、0W/mm2から200W/mm2まで徐々に増加させた。
各試料の接合部を切断した断面をSEMで観察し、5000倍の断面画像を得た。この断面画像に対し、画像解析ソフト「WinROOF」を使用し、材料層と気孔とで2値化する処理を行った。この2値化した画像から気孔の面積比を算出し、接合部の気孔率とした。結果を表1に示す。
各資料に対し雰囲気温度を-50℃から150℃まで繰り返し変化させる熱サイクルを実施した。1000サイクル後に、上記耐レーザー出力性能を評価し、熱サイクル実施前の耐レーザー出力性能に対する、熱サイクル実施後の耐レーザー出力性能の比を求めた。この比としては、80%以上が好ましい。
実施例1と同じ光波長変換部材と放熱部材とを用意し、シリコーンペースト(熱伝導率0.9W/mK)、銀を含む導電ペースト(熱伝導率14W/mK)、又は半田(熱伝導率60W/mK)を用いて接合部を形成し、試料4~6の光波長変換装置を得た。各試料における耐レーザー出力性能及び気孔率の測定結果を表1に示す。
実施例1と同じ光波長変換部材と放熱部材とに対し、銀ナノ粒子を用い気孔率を実施例1と変えた接合部を形成し、試料7~12の光波長変換装置を得た。各試料における耐レーザー出力性能及び気孔率の測定結果を表1に示す。
Al2O3(平均粒径0.2μm)、Y2O3(平均粒径1.2μm)、Gd2O3(平均粒径1.1μm)、CeO2(平均粒径1.5μm)、Lu2O3(平均粒径1.1μm)、Sc2O3(平均粒径1.2μm)、及びGa2O3(平均粒径1.1μm)の粒子を、A3B5O12:Ce量が焼結体全体の30体積%になり、かつ、表1に示す組成となるように秤量した以外は、実施例1と同様の手順で試料13~24の光波長変換装置を得た。各試料における耐レーザー出力性能及び気孔率の測定結果を表1に示す。
セラミックス蛍光体の平均厚み及び接合部の接合領域における平均厚みを表1に示すように変えた以外は、実施例1と同様の手順で試料25~30の光波長変換装置を得た。各試料における耐レーザー出力性能及び気孔率の測定結果を表1に示す。なお、試料30は、接合部の強度不足により、耐レーザー出力性能が測定不能であった。
接合部の側面をフッ素系の樹脂層で被覆した点以外は、実施例1と同様の手順で試料31の光波長変換装置を得た。また、放熱部材の上面に切欠きを設けた点以外は、実施例1と同様の手順で試料32の光波長変換装置を得た。さらに、光波長変換部材の厚み方向から視た隅部に半径5mmのR加工をした点以外は、実施例1と同様の手順で試料33の光波長変換装置を得た。
<考察>
表1に示すように、接合部の熱伝導率が120W/mK以上かつ融点が240℃以上の実施例1~4では、耐レーザー出力性能が良好であり、レーザーの高出力域まで対応できることがわかる。一方、接合部の熱伝導率が120W/mK未満かつ融点が240℃未満の比較例では、レーザーの高出力域で温度消光が発生し、高出力域への対応ができない。
Claims (9)
- 入射した光の波長を変換するように構成された光波長変換部材と、
前記光波長変換部材よりも放熱性に優れた放熱部材と、
前記光波長変換部材と前記放熱部材とを接合する接合部と、
を備え、
前記光波長変換部材は、
板状のセラミックス蛍光体と、
前記セラミックス蛍光体の前記放熱部材側の面に配置された反射膜と、
を有し、
前記接合部の熱伝導率は120W/mK以上であり、
前記接合部の融点は240℃以上である、光波長変換装置。 - 前記接合部は、金、銀、銅、又はこれらの組み合わせのみから構成される、請求項1に記載の光波長変換装置。
- 前記接合部は、気孔を有し、
前記接合部の気孔率は、40%以下である、請求項1又は請求項2に記載の光波長変換装置。 - 前記接合部のうち、前記光波長変換部材と前記放熱部材との間に配置された接合領域の平均厚みは、1μm以上である、請求項1から請求項3のいずれか1項に記載の光波長変換装置。
- 前記接合部のうち、前記光波長変換部材と前記放熱部材との間に配置された接合領域の平均厚みは、前記セラミックス蛍光体の平均厚みと前記接合領域の平均厚みとの合計厚みの50%以下である、請求項1から請求項4のいずれか1項に記載の光波長変換装置。
- 前記接合部のうち、前記光波長変換部材及び前記放熱部材と接合されていない面の少なくとも一部を被覆する樹脂層をさらに備える、請求項1から請求項5のいずれか1項に記載の光波長変換装置。
- 前記樹脂層は、フッ化物系の樹脂を主成分とする、請求項6に記載の光波長変換装置。
- 前記放熱部材は、前記接合部と接合される面に配置された少なくとも1つの切欠きを有する、請求項1から請求項7のいずれか1項に記載の光波長変換装置。
- 前記光波長変換部材は、厚み方向から視た少なくとも1つの隅部が丸み付けられる、請求項1から請求項8のいずれか1項に記載の光波長変換装置。
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US16/968,693 US11287107B2 (en) | 2018-02-14 | 2018-10-31 | Optical wavelength conversion device |
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JPWO2019159441A1 (ja) | 2021-01-07 |
CN111699420A (zh) | 2020-09-22 |
US11287107B2 (en) | 2022-03-29 |
TWI771564B (zh) | 2022-07-21 |
CN111699420B (zh) | 2023-01-13 |
EP3754386A1 (en) | 2020-12-23 |
KR102501831B1 (ko) | 2023-02-21 |
TW201937761A (zh) | 2019-09-16 |
US20210018160A1 (en) | 2021-01-21 |
KR20200106527A (ko) | 2020-09-14 |
JP6845372B2 (ja) | 2021-03-17 |
EP3754386A4 (en) | 2021-11-17 |
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