WO2019155970A1 - Bande adhésive pour la fabrication de semi-conducteurs - Google Patents

Bande adhésive pour la fabrication de semi-conducteurs Download PDF

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Publication number
WO2019155970A1
WO2019155970A1 PCT/JP2019/003246 JP2019003246W WO2019155970A1 WO 2019155970 A1 WO2019155970 A1 WO 2019155970A1 JP 2019003246 W JP2019003246 W JP 2019003246W WO 2019155970 A1 WO2019155970 A1 WO 2019155970A1
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WIPO (PCT)
Prior art keywords
adhesive layer
pressure
sensitive adhesive
adhesive tape
tape
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PCT/JP2019/003246
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English (en)
Japanese (ja)
Inventor
裕也 長谷川
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リンテック株式会社
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Application filed by リンテック株式会社 filed Critical リンテック株式会社
Priority to KR1020207019966A priority Critical patent/KR102642079B1/ko
Priority to JP2019570712A priority patent/JP7404073B2/ja
Publication of WO2019155970A1 publication Critical patent/WO2019155970A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Definitions

  • the present invention relates to an adhesive tape for semiconductor processing.
  • the present invention relates to an adhesive tape for semiconductor processing that is suitably used for protecting a circuit surface when processing a semiconductor wafer.
  • Semiconductor chips mounted on various electronic devices are obtained by dividing a semiconductor wafer on which a circuit is formed. Electronic devices are rapidly becoming smaller and more multifunctional, and semiconductor chips are also required to be smaller, lower in profile and higher in density. In order to reduce the size and height of a chip, it is common to adjust the thickness of the chip by forming a circuit on the surface of the semiconductor wafer and then grinding the back surface of the semiconductor wafer.
  • an adhesive tape called a back grind tape is attached to the wafer surface in order to protect the circuit on the wafer surface and hold the semiconductor wafer.
  • the semiconductor wafer after the back grinding is transferred to the next process such as a dicing process for separating the wafer into individual pieces.
  • the semiconductor wafer after back grinding is very thin and tends to warp together with the adhesive tape. Further, since the semiconductor wafer is held only by the adhesive tape having low rigidity, the semiconductor wafer is easily loaded and damaged during transportation.
  • the peripheral portion of the back grind tape is also attached to a ring-shaped frame (hereinafter also referred to as a ring frame) that is attached to a grinding device at the time of back surface grinding. It is described that the back surface grinding is performed after being fixed to the ring frame via a grind tape. That is, the metal ring frame, the semiconductor wafer, and the back grind tape are integrated and placed on the chuck table, and the back surface of the semiconductor wafer is ground by the grinder.
  • a ring-shaped frame hereinafter also referred to as a ring frame
  • the semiconductor wafer after the back surface grinding can be transported to the next process together with a highly rigid ring frame. Therefore, even if the semiconductor wafer after grinding is very thin, warpage of the semiconductor wafer is suppressed by the ring frame. Further, since the load is hardly applied to the wafer during transfer, damage to the wafer can be suppressed.
  • the back grind tape is fixed to the ring frame and transported to the next process, if the next process is a dicing process, the back grind tape affixed to the ring frame also serves as the dicing tape Can do.
  • adhesive sheets are collectively referred to as “adhesive tape for semiconductor processing”.
  • the semiconductor wafer is not directly supported by the ring frame, but is attached to the back grind tape, so that the load of the semiconductor wafer is applied to the back grind tape. Since this semiconductor wafer is a wafer before the back surface grinding, it is heavier than the wafer after the back surface grinding. Therefore, there is a problem that the back grind tape is loosened due to the weight of the semiconductor wafer.
  • the present invention has been made in view of such a situation, and an object of the present invention is to provide a pressure-sensitive adhesive tape for semiconductor processing in which the looseness of the pressure-sensitive adhesive tape is suppressed and the peelability from the ring frame is good.
  • aspects of the present invention include [1] An adhesive tape having a substrate and an adhesive layer provided on one surface side of the substrate, Before the energy ray irradiation to the pressure-sensitive adhesive layer, the gel fraction of the pressure-sensitive adhesive layer is 35% or more, and the loss tangent of the pressure-sensitive adhesive layer at 50 ° C. is less than 0.65, The adhesive tape for semiconductor processing, wherein the adhesive force of the adhesive layer is 3100 mN / 25 mm or less after energy beam irradiation to the adhesive layer.
  • an adhesive tape for semiconductor processing in which the looseness of the adhesive tape is suppressed and the peelability from the ring frame is good.
  • FIG. 1 is a cross-sectional view of an adhesive tape for semiconductor processing according to an embodiment of the present invention.
  • FIG. 2A is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device using an adhesive tape for semiconductor processing according to an embodiment of the present invention.
  • FIG. 2B is a continuation of FIG. 2A.
  • FIG. 2C is a continuation of FIG. 2B.
  • FIG. 2D is a continuation of FIG. 2C.
  • FIG. 2E is a continuation of FIG. 2D.
  • FIG. 2F is a continuation of FIG. 2E.
  • the adhesive tape 1 for semiconductor processing has a configuration in which an adhesive layer 20 is laminated on a base material 10 as shown in FIG.
  • the pressure-sensitive adhesive tape for semiconductor processing is not limited to the configuration shown in FIG. 1 and may have other layers as long as the effects of the present invention are obtained.
  • a release sheet may be formed on the main surface 20a of the adhesive layer 20.
  • the adherend (the ring frame for fixing the semiconductor wafer and the surface of the semiconductor wafer) is attached to the main surface 20a of the adhesive layer 20 before the semiconductor wafer is processed (for example, back grinding). Then, after processing the semiconductor wafer, the semiconductor processing pressure-sensitive adhesive tape, that is, the pressure-sensitive adhesive layer 20 is peeled from the semiconductor wafer and the ring frame. Therefore, the pressure-sensitive adhesive layer has an adhesive force showing an appropriate removability to both the semiconductor wafer and the ring frame that are adherends.
  • the thickness of the pressure-sensitive adhesive layer 20 is not particularly limited, but is preferably 1 ⁇ m to 50 ⁇ m, more preferably 5 ⁇ m to 30 ⁇ m, and still more preferably 12 ⁇ m to 18 ⁇ m. If the thickness of the pressure-sensitive adhesive layer is too thin, the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer tends to be low during the processing of the semiconductor wafer. On the other hand, if it is too thick, the thickness of the semiconductor wafer tends to vary during backside grinding.
  • the main surface of the adhesive layer to which the ring frame and the semiconductor wafer are attached has the following physical properties.
  • the following physical properties are manifested on the main surface of the pressure-sensitive adhesive layer at least in the region where the ring frame and the semiconductor wafer are attached.
  • the gel fraction of the pressure-sensitive adhesive layer is 35% or more before energy ray irradiation to the pressure-sensitive adhesive layer.
  • the adhesive layer is not easily deformed even when a force is applied to the adhesive layer before the energy ray irradiation, that is, in the step such as back grinding, the gel fraction is within the above range. As a result, tape slack tends to be suppressed.
  • the gel fraction of the pressure-sensitive adhesive layer is preferably 37% or more, and more preferably 40% or more. Moreover, it is preferable that the gel fraction of an adhesive layer is 70% or less, It is more preferable that it is 60% or less, It is further more preferable that it is 50% or less. When the gel fraction is too large, tape slack is sufficiently suppressed, but the tape elongation during back surface grinding becomes small and the grinder tends to come into contact with the ring frame.
  • the loss tangent (tan ⁇ ) of the pressure-sensitive adhesive layer at 50 ° C. is less than 0.65.
  • the loss tangent (tan ⁇ ) is defined as “loss elastic modulus / storage elastic modulus”, and is a value measured by a response to a stress such as a tensile stress or a torsional stress applied to an object by a dynamic viscoelasticity measuring apparatus.
  • the loss tangent of the pressure-sensitive adhesive layer is preferably 0.60 or less, and more preferably 0.55 or less. Further, the loss tangent of the pressure-sensitive adhesive layer is preferably 0.30 or more, and more preferably 0.40 or more. If the loss tangent is too small, the tape slack is sufficiently suppressed, but the tape elongation during back grinding becomes small, and the grinder may come into contact with the ring frame.
  • the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer is 3100 mN / 25 mm or less.
  • energy beam irradiation that is, when peeling the adhesive tape for semiconductor processing from the ring frame
  • the pressure sensitive adhesive layer should be peeled well not only from the wafer but also from the ring frame because it is within the above range. Can do.
  • the adhesive strength of the pressure-sensitive adhesive layer after irradiation with energy rays is preferably 3000 mN / 25 mm or less, and more preferably 2500 mN / 25 mm or less.
  • the adhesive layer has the physical properties shown in the above (1.1.1.) To (1.1.3.), So that the slack of the adhesive tape is suppressed during back grinding, and it is excellent from the ring frame after back grinding. Can be peeled off.
  • the structure and composition of the pressure-sensitive adhesive layer are not particularly limited as long as the pressure-sensitive adhesive layer has the above physical properties, but in the present embodiment, it is preferable to have the following structure and components.
  • the change in the adhesive force of the adhesive layer before and after energy beam irradiation is used in order to improve the peeling of the adhesive tape from the semiconductor wafer and the ring frame. That is, in processing steps such as back grinding, the adhesive layer is secured to the adhesive tape, the ring frame, and the semiconductor wafer without irradiating the adhesive layer with energy rays.
  • the pressure-sensitive adhesive layer is irradiated with energy rays to reduce the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer, thereby making it easy to peel the pressure-sensitive adhesive tape from the ring frame.
  • the adhesive layer of the adhesive tape for semiconductor processing according to the present embodiment contains an energy ray curable resin as a constituent component.
  • an energy beam curable resin has a relatively low molecular weight and low cohesion. Therefore, when the energy ray curable resin before energy ray irradiation is contained in the pressure-sensitive adhesive layer, the energy ray curable resin easily moves when force is applied to the pressure-sensitive adhesive layer. As a result, the pressure-sensitive adhesive layer is easily deformed, and it becomes difficult to suppress the slack of the tape.
  • a crosslinked structure is introduced in the pressure-sensitive adhesive layer. Due to the presence of the cross-linked structure, the movement of the energy beam curable resin is hindered by the cross-linked structure, and the above-described gel fraction and loss tangent can be easily within the above ranges, and the adhesive strength after irradiation with the energy beam. Can be sufficiently reduced.
  • the cross-linked structure is preferably formed of a functional group-containing acrylic polymer and a cross-linking agent. Therefore, the pressure-sensitive adhesive layer preferably has a functional group-containing acrylic polymer, a crosslinking agent, and an energy ray curable resin. These constituent components will be described in detail.
  • the functional group-containing acrylic polymer may be a known acrylic polymer.
  • the functional group-containing acrylic polymer may be a homopolymer formed from one type of acrylic monomer, or may be a copolymer formed from a plurality of types of acrylic monomers. It may be a copolymer formed from one kind or plural kinds of acrylic monomers and monomers other than acrylic monomers.
  • the functional group-containing acrylic polymer is preferably an acrylic copolymer obtained by copolymerizing an alkyl (meth) acrylate and a functional group-containing monomer.
  • (meth) acrylate is used as a term indicating both “acrylate” and “methacrylate”, and the same applies to other similar terms.
  • alkyl (meth) acrylate examples include an alkyl (meth) acrylate having an alkyl group having 1 to 18 carbon atoms, preferably an alkyl (meth) acrylate having an alkyl group having 1 to 8 carbon atoms, more preferably a carbon number. Examples thereof include alkyl (meth) acrylates having 1 to 4 alkyl groups.
  • alkyl (meth) acrylate examples include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, t- Examples include butyl (meth) acrylate, n-pentyl (meth) acrylate, n-hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, and n-octyl (meth) acrylate. Of these, butyl acrylate is preferred.
  • alkyl (meth) acrylate In the functional group-containing acrylic copolymer, only one type of alkyl (meth) acrylate may be contained, or two or more types may be contained.
  • the structural unit derived from alkyl (meth) acrylate is preferably 70% by mass or more, and more preferably 80% by mass or more, based on all structural units of the functional group-containing acrylic copolymer.
  • the constituent unit derived from alkyl (meth) acrylate is preferably 99% by mass or less, and more preferably 90% by mass or less.
  • the functional group-containing monomer is a monomer containing a reactive functional group.
  • the reactive functional group is a functional group capable of reacting with other compounds such as a crosslinking agent described later.
  • An acrylic copolymer has a structural unit derived from a functional group-containing monomer, and is crosslinked by a crosslinking agent.
  • the reactive functional group examples include a carboxy group, a hydroxy group, and an epoxy group. In these, since the reactivity with a crosslinking agent is favorable, a carboxy group is more preferable.
  • Examples of functional group-containing monomers include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. Also, hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl ( Examples thereof include hydroxy group-containing (meth) acrylates such as (meth) acrylate and 4-hydroxybutyl (meth) acrylate. Moreover, unsaturated alcohols, such as vinyl alcohol and allyl alcohol, are illustrated.
  • epoxy groups containing glycidyl (meth) acrylate, ⁇ -methylglycidyl (meth) acrylate, (3,4-epoxycyclohexyl) methyl (meth) acrylate, 3-epoxycyclo-2-hydroxypropyl (meth) acrylate and the like examples include (meth) acrylates.
  • Non-acrylic epoxy group-containing monomers such as glycidyl crotonate and allyl glycidyl ether are also exemplified.
  • Only one type of functional group-containing monomer may be included in the acrylic copolymer, or two or more types may be included.
  • ethylenically unsaturated carboxylic acid is preferable, among which acrylic acid and methacrylic acid are more preferable, and acrylic acid is more preferable.
  • the structural unit derived from the functional group-containing monomer is preferably 1% by mass or more, and more preferably 5% by mass or more, in all the structural units of the acrylic copolymer containing the functional group.
  • the constitutional unit derived from the functional group-containing monomer is preferably 30% by mass or less, and more preferably 15% by mass or less.
  • the weight average molecular weight (Mw) of the functional group-containing acrylic polymer is preferably 10,000 to 2,000,000, and more preferably 100,000 to 1,500,000 from the viewpoint of film forming properties at the time of coating.
  • the weight average molecular weight in this specification is the value of polystyrene conversion measured by the gel permeation chromatography (GPC) method.
  • the acrylic polymer containing a functional group may contain a constituent monomer other than the alkyl (meth) acrylate and the functional group-containing monomer described above.
  • cycloalkyl (meth) acrylate having about 1 to 20 carbon atoms in the cycloalkyl group
  • benzyl (meth) acrylate isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meta ) (Meth) acrylates having a cyclic skeleton such as acrylate and dicyclopentenyloxyethyl (meth) acrylate
  • acrylamide compounds such as acrylamide, N-methylacrylamide and N, N-dimethylacrylamide
  • vinyl such as vinyl acetate and vinyl propionate Ester compound
  • Olefin such as ethylene, propylene and isobutylene
  • Halogenated olefin such as vinyl chloride and vinylidene chloride
  • the cross-linking agent is not particularly limited as long as the pressure-sensitive adhesive layer can form a cross-linking structure that easily satisfies the above characteristics.
  • a relatively loosely crosslinked structure is mainly formed, and a structure that is partially relatively strongly crosslinked is present in the structure.
  • a part of the structure that is relatively loosely crosslinked has a structure that is relatively strongly crosslinked, so that it is easy to satisfy the physical properties of the pressure-sensitive adhesive layer.
  • crosslinking agents are used as a crosslinking agent for the acrylic copolymer containing a functional group.
  • a polyisocyanate-based crosslinking agent as a crosslinking agent that forms a relatively loosely crosslinked structure
  • an epoxy-based crosslinking agent as a crosslinking agent that forms a relatively strongly crosslinked structure.
  • crosslinking agents react with the functional groups in the functional group-containing acrylic polymer to crosslink the functional group-containing acrylic polymer.
  • the degree of crosslinking differs between the polyisocyanate crosslinking agent and the epoxy crosslinking agent.
  • the polyisocyanate-based crosslinking agent is a compound having two or more isocyanate groups per molecule.
  • Specific examples include aromatic polyisocyanates such as tolylene diisocyanate, diphenylmethane diisocyanate, and xylylene diisocyanate; aliphatic polyisocyanates such as hexamethylene diisocyanate; alicyclic polyisocyanates such as isophorone diisocyanate and hydrogenated diphenylmethane diisocyanate. .
  • biuret bodies, isocyanurate bodies, and adduct bodies that are a reaction product of these with low molecular active hydrogen-containing compounds such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane, castor oil, etc.
  • low molecular active hydrogen-containing compounds such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane, castor oil, etc.
  • polyisocyanate type crosslinking agent only 1 type may be contained and 2 or more types may be contained.
  • Examples of the epoxy-based crosslinking agent include 1,3-bis (N, N′-diglycidylaminomethyl) cyclohexane, N, N, N ′, N′-tetraglycidyl-m-xylenediamine, and ethylene glycol diglycidyl ether. 1,6-hexanediol diglycidyl ether, trimethylolpropane diglycidyl ether, diglycidylaniline, diglycidylamine and the like. As for an epoxy type crosslinking agent, only 1 type may be contained and 2 or more types may be contained.
  • the content of the polyisocyanate-based crosslinking agent is preferably 5 parts by mass or more with respect to 100 parts by mass of the functional group-containing acrylic copolymer. On the other hand, the content is preferably 15 parts by mass or less.
  • the content of the epoxy crosslinking agent is preferably 0.01 parts by mass or more, and more preferably 0.03 parts by mass or more with respect to 100 parts by mass of the functional group-containing acrylic copolymer.
  • the content is preferably 0.5 parts by mass or less, more preferably 0.3 parts by mass or less, and further preferably 0.1 parts by mass or less.
  • the content of the polyisocyanate-based crosslinking agent and the epoxy-based crosslinking agent is within the above range, it becomes easy to adjust the adhesive strength of the semiconductor processing adhesive tape before energy beam irradiation to the semiconductor wafer and the ring frame. Moreover, after the production of the adhesive tape for semiconductor processing, the adhesive property is stabilized without requiring an excessively long curing period.
  • the gel fraction of the crosslinked structure that is, the gel fraction of the crosslinked structure formed from the functional group-containing acrylic polymer and the crosslinking agent is preferably 70% or more and 95% or less.
  • the gel fraction of the pressure-sensitive adhesive layer described above is a gel fraction that takes into consideration not only the crosslinked structure but also the energy ray-curable resin having a relatively low molecular weight. It depends. For example, if a large amount of low molecular weight energy ray curable resin is contained, the gel fraction of the pressure-sensitive adhesive layer tends to be low. On the other hand, since the gel fraction of the crosslinked structure excludes the influence of the energy ray curable resin, it is considered that the degree of crosslinking is more reflected. In this embodiment, it is preferable that the gel fraction of a crosslinked structure is larger than the gel fraction of an adhesive layer.
  • the energy ray curable resin is a resin having an unsaturated group curable by irradiation with energy rays in the molecule.
  • unsaturated groups include (meth) acryloyl groups and vinyl groups.
  • the energy ray curable resin is preferably a low molecular weight compound (monofunctional and polyfunctional monomers and oligomers). Moreover, since said crosslinked structure is formed by thermal crosslinking, in order to ensure the adhesive force before energy beam irradiation, what is hard to carry out thermal crosslinking of energy beam curable resin is preferable.
  • low molecular weight energy ray curable resins examples include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene.
  • Cycloaliphatic skeleton-containing acrylates such as glycol diacrylate, 1,6-hexanediol diacrylate, dicyclopentadiene dimethoxydiacrylate, and isobornyl acrylate; polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy modified Acrylate compounds such as acrylate, polyether acrylate, itaconic acid oligomer Like it is exemplified. These may be one type or two or more types.
  • a polyfunctional monomer or oligomer is more preferable, and a polyfunctional urethane (meth) acrylate oligomer is particularly preferable.
  • the molecular weight (weight average molecular weight in the case of oligomer) of the energy beam curable resin is preferably 500 or more, and more preferably 1000 or more. On the other hand, the molecular weight is preferably 10,000 or less, more preferably 7000 or less, further preferably 5000 or less, and particularly preferably 3000 or less.
  • the molecular weight of the energy ray curable resin is within the above range, it has a predetermined adhesive strength before irradiation with energy rays, and the adhesive strength is reduced to such an extent that it can be peeled off from the ring frame after irradiation with energy rays. It becomes easy to make.
  • the content of the energy ray curable resin is preferably 50 parts by mass or more and more preferably 100 parts by mass or more with respect to 100 parts by mass of the functional group-containing acrylic copolymer. On the other hand, the content is preferably 250 parts by mass or less, and more preferably 200 parts by mass or less.
  • the content of the energy ray curable resin is within the above range, so that it has a predetermined adhesive force before irradiation with energy rays, and has an adhesive force that can be peeled off from the ring frame after irradiation with energy rays. It becomes easy to lower.
  • Examples of energy rays for curing the pressure-sensitive adhesive layer include ultraviolet rays and electron beams. Among these, ultraviolet rays that are relatively easy to introduce irradiation equipment are preferable.
  • near ultraviolet rays including ultraviolet rays having a wavelength of about 200 to 380 nm for ease of handling.
  • the amount of light may be appropriately selected according to the type of energy ray curable group of the pressure-sensitive adhesive layer and the thickness of the pressure-sensitive adhesive tape for semiconductor processing, and is usually about 50 to 500 mJ / cm 2 , and is 100 to 450 mJ / cm 2 is preferable, and 200 to 400 mJ / cm 2 is more preferable.
  • the ultraviolet illumination is usually 50 ⁇ 500mW / cm 2 or so, preferably 100 ⁇ 450mW / cm 2, more preferably 200 ⁇ 400mW / cm 2.
  • the ultraviolet light source is not particularly limited, and for example, a high pressure mercury lamp, a metal halide lamp, a UV-LED, or the like is used.
  • the pressure-sensitive adhesive layer may contain other components such as dyes, pigments, deterioration inhibitors, antistatic agents, flame retardants, silicone compounds, chain transfer agents, plasticizers, and photopolymerization initiators.
  • the pressure-sensitive adhesive layer contains an energy ray curable resin
  • a photopolymerization initiator the curing is sufficiently performed and the adhesive strength after irradiation with the energy ray is lowered to a level that can be satisfactorily peeled from the ring frame. Can do.
  • photopolymerization initiators examples include photoinitiators such as benzoin compounds, acetophenone compounds, acylphosphine oxide compounds, titanocene compounds, thioxanthone compounds, and peroxide compounds, and photosensitizers such as amines and quinones.
  • ⁇ -hydroxycyclohexyl phenyl ketone benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, ⁇ -chlore
  • examples include anthraquinone and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.
  • the base material 10 of the adhesive tape 1 for semiconductor processing according to the present embodiment is particularly preferably formed of a material that extends to such a degree that the grinder and the ring frame do not come into contact with each other and that does not break the adhesive tape when processing a semiconductor wafer. Not limited.
  • ethylene-based copolymer films such as ethylene-vinyl acetate copolymer film, ethylene- (meth) acrylic acid copolymer film, ethylene- (meth) acrylic acid ester copolymer film; low density polyethylene (LDPE) film, polyethylene film such as linear low density polyethylene (LLDPE) film, high density polyethylene (HDPE) film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, ethylene-norbornene copolymer film, norbornene
  • LDPE low density polyethylene
  • HDPE high density polyethylene
  • polypropylene film polybutene film, polybutadiene film, polymethylpentene film, ethylene-norbornene copolymer film, norbornene
  • polyolefin films such as resin films
  • polyvinyl chloride films such as polyvinyl chloride films and vinyl chloride copolymer films
  • polyurethane films and the like are examples of poly
  • modified films such as these crosslinked films and ionomer films can be used.
  • the substrate 10 may be a film made of one of these, or a laminated film in which two or more of these are combined.
  • the surface on which the pressure-sensitive adhesive layer 20 is formed may be subjected to corona treatment or may be provided with a primer layer.
  • the film constituting the substrate 10 is preferably at least one selected from an ethylene copolymer film and a polyolefin film.
  • the thickness of the base material 10 is not limited as long as the adhesive tape 1 for semiconductor processing according to this embodiment exhibits the effects of the present invention.
  • the thickness is preferably 20 ⁇ m or more and 450 ⁇ m or less, more preferably 25 ⁇ m or more and 400 ⁇ m or less, and particularly preferably 50 ⁇ m or more and 350 ⁇ m or less.
  • the method for producing the adhesive tape for semiconductor processing according to the present embodiment is not particularly limited as long as it can form an adhesive layer on one surface of the substrate, and a known method may be used.
  • a composition for forming the pressure-sensitive adhesive layer for example, a pressure-sensitive adhesive composition containing the above-described components (functional group-containing acrylic polymer, crosslinking agent, energy ray curable resin), or the pressure-sensitive adhesive A composition is prepared by diluting the agent composition with a solvent or the like.
  • the solvent examples include organic solvents such as methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, dioxane, cyclohexane, n-hexane, toluene, xylene, n-propanol, and isopropanol.
  • organic solvents such as methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, dioxane, cyclohexane, n-hexane, toluene, xylene, n-propanol, and isopropanol.
  • this adhesive composition, etc., on the substrate known methods such as spin coating method, spray coating method, bar coating method, knife coating method, roll coating method, blade coating method, die coating method, gravure coating method, etc. Is applied, heated and dried to form an adhesive layer on the substrate.
  • an adhesive composition or the like is applied to the release treatment surface of the release sheet, heated and dried to form an adhesive layer on the release sheet, and then the adhesive layer and the substrate on the release sheet are formed.
  • the adhesive tape for a semiconductor processing by which the adhesive layer and the peeling sheet were provided in this order on the base material may be manufactured by bonding.
  • drying conditions after coating for example, heating at a temperature of 80 to 150 ° C. for 30 seconds to 5 minutes may be performed.
  • the pressure-sensitive adhesive composition or the like contains a cross-linking agent, a cross-linking reaction is caused by heating. Therefore, in order to sufficiently advance the cross-linking reaction, the drying conditions (temperature, time, etc.) may be changed. A heat treatment may be separately provided.
  • the resulting semiconductor processing pressure-sensitive adhesive tape is cured for about one week in an environment of, for example, 23 ° C. and a relative humidity of 50%.
  • the surface (surface 50a) on which the circuit of the semiconductor wafer 50 is formed and the ring frame 60 are affixed to one main surface of the adhesive layer of the semiconductor processing adhesive tape 1.
  • the semiconductor wafer 50 is fixed to the ring frame 60 via the semiconductor processing adhesive tape 1 while protecting the surface.
  • the semiconductor wafer may be a silicon wafer or a compound semiconductor wafer such as gallium / arsenic. A known method may be adopted as a method for forming the circuit.
  • the thickness of the semiconductor wafer on which the predetermined circuit is formed is not particularly limited, but is usually about 500 to 1000 ⁇ m.
  • the semiconductor wafer is placed on the chuck table of the grinding device, and the ring frame is fixed to the grinding device.
  • the ring frame 60 side is pushed down or the chuck table 75 side is pushed up in order to prevent contact between the grinder 70 and the ring frame 60.
  • the semiconductor processing adhesive tape 1 is stretched, and in this state, the back surface 50 b of the semiconductor wafer 50 is ground by the grinder 70.
  • the back surface grinding is finished, the ring frame 60 side or the chuck table 75 side returns to the original position, and the elongation of the adhesive tape 1 for semiconductor processing is released.
  • the adhesive tape for semiconductor processing is irradiated with energy rays, the adhesive is cured, the adhesive force is reduced, and the adhesive tape for semiconductor processing may be peeled off from the circuit surface.
  • the semiconductor processing pressure-sensitive adhesive tape is conveyed to the dicing process in a state where the adhesive tape is attached to the ring frame and the semiconductor wafer. That is, the semiconductor processing adhesive tape serves not only as a back grind tape but also as a dicing tape.
  • the semiconductor wafer is divided into a plurality of semiconductor chips.
  • a known method can be adopted as a method of dividing into individual pieces. For example, as shown in FIG. 2C, by using a rotary blade 80 such as a dicer to form a groove penetrating the front and back surfaces of the semiconductor wafer 50, the semiconductor wafer 50 is cut into individual pieces. The separated semiconductor wafer is obtained as a semiconductor chip 51.
  • the semiconductor processing pressure-sensitive adhesive tape is peeled from the singulated semiconductor wafer (that is, a plurality of semiconductor chips).
  • the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape 1 includes an energy ray curable resin
  • the pressure-sensitive adhesive layer is cured by irradiating energy rays from an energy ray irradiation source 90. Reduce the adhesion of the layer.
  • the pickup tape 100 is attached to the back surface 51 b side of the plurality of semiconductor chips 51 and the ring frame 60.
  • the semiconductor processing adhesive tape is peeled off from the plurality of semiconductor chips 51 held on the pickup tape 100 to expose the circuit surface 51a of the semiconductor chip.
  • the dicing process is performed after the back surface grinding of the semiconductor wafer, but a so-called first dicing process may be performed. Specifically, after a groove having a depth of cut shallower than the wafer thickness is formed on the circuit forming surface (front surface) of the semiconductor wafer, an adhesive tape for semiconductor processing is applied to the circuit forming surface and the ring frame. To do. Similarly to the above, the thickness of the wafer may be reduced by grinding the back surface of the semiconductor wafer, and the semiconductor wafer may be separated into pieces by reaching the cut surface.
  • the pressure-sensitive adhesive layer on which the ring frame and the semiconductor wafer are bonded to the same surface has characteristics required when processing the semiconductor wafer and characteristics required after processing the semiconductor wafer.
  • the semiconductor processing pressure-sensitive adhesive tape according to the present embodiment can suppress slack during the processing of the semiconductor wafer, and exhibits good peelability even when the pressure-sensitive adhesive tape is peeled off from the ring frame after the processing of the semiconductor wafer. it can.
  • the energy ray-curable resin and a predetermined cross-linked structure are present in the pressure-sensitive adhesive layer.
  • the predetermined cross-linked structure can be easily obtained by using two types of cross-linking agents.
  • the measurement method and evaluation method in this example are as follows.
  • the pressure-sensitive adhesive having the composition shown in Table 1 was coated on a release sheet and dried. Seven days after coating, 0.3 g of the pressure-sensitive adhesive was weighed, wrapped in # 200 mesh, and immersed in ethyl acetate at 23 ° C. for 1 day. After soaking, the mesh was taken out, dried at 100 ° C. for 2 hours, and conditioned at 23 ° C. and 50 RH for 1 hour, and then the weight of the adhesive was measured. The gel fraction (%) was calculated from the following formula. ((Adhesive weight before immersion-Adhesive weight after immersion) / Adhesive weight before immersion) x 100
  • Example 4 an adhesive having a composition obtained by removing the energy ray curable resin from the adhesive was coated on a release sheet and dried. About the adhesive 7 days after coating, the gel fraction was measured by the same method as described above.
  • Adhesive strength after energy beam irradiation According to JIS Z0237 which prescribes the measuring method of adhesive strength, it measured by the following procedure.
  • UV irradiation was performed from the substrate side under the irradiation conditions of 230 mW / cm 2 illuminance and 500 mJ / cm 2 accumulated light intensity using a Lintec UV irradiation device (RAD-2000m / 12). Then, the pressure-sensitive adhesive layer was cured.
  • the pressure-sensitive adhesive sheet having the cured pressure-sensitive adhesive layer is peeled off from a stainless steel (SUS304) mirror surface plate using a universal tensile tester (Autograph AG-IS) manufactured by Shimadzu Corporation at a peeling angle of 180 ° and a peeling speed of 300 mm / min. It peeled and the adhesive force was measured. The obtained value was defined as the adhesive strength after energy beam irradiation.
  • the adhesive tape for semiconductor processing of Examples and Comparative Examples was attached to a ring frame made of SUS304 for 8-inch wafer and a 4-inch silicon wafer with RAD-2700.
  • the semiconductor processing adhesive tape affixed to the ring frame and the silicon wafer was placed on the grinding apparatus, the ring frame was pushed down to 4 mm downward, and the semiconductor processing adhesive tape was extended. Thereafter, the ring frame was released from depression, and the size of the slack was measured after 5 minutes, and the slack of the tape was evaluated according to the following criteria.
  • ⁇ No slack
  • ⁇ There is slack but there is no practical problem
  • ⁇ There is slack and there is practical problem
  • the silicon wafer was ground to a finished thickness of 150 ⁇ m with the ring frame pressed down. After grinding, the ring frame is returned to its original height, irradiated with ultraviolet rays (illuminance: 230 mW / cm 2 , light intensity: 190 mJ / cm 2 ), and then the semiconductor processing adhesive tape is peeled off from the ring frame. The peeled state was evaluated according to the following criteria. ⁇ : No peeling failure ⁇ : Generation of peeling failure (heavy peeling) ⁇ : Peeling failure occurred (tape stuck to the ring frame)
  • Example 1 Preparation of adhesive composition
  • BA butyl acrylate
  • AA acrylic acid
  • the above-mentioned pressure-sensitive adhesive composition was applied on the release surface of a release sheet (SP-PET 381031 manufactured by Lintec Corporation). Subsequently, drying by heating was performed to advance the crosslinking reaction, and the coating film of the pressure-sensitive adhesive composition was used as a pressure-sensitive adhesive layer. The thickness of the pressure-sensitive adhesive layer was 15 ⁇ m. Thereafter, the pressure-sensitive adhesive layer on the obtained release sheet was bonded to the corona-treated surface of an ethylene-methacrylic acid copolymer (EMAA) film (thickness: 80 ⁇ m) having a corona-treated one surface as a base material. Thus, an adhesive tape for semiconductor processing was obtained.
  • EEMAA ethylene-methacrylic acid copolymer
  • Examples 2 to 5 Comparative Examples 1 and 2
  • a semiconductor processing adhesive tape was obtained in the same manner as in Example 1 except that the composition of the adhesive was changed to the composition shown in Table 1.
  • Example 1 the gel fraction of the composition obtained by removing the energy ray curable resin from the adhesive is 75%.
  • Example 4 the composition of the composition obtained by removing the energy ray curable resin from the adhesive.
  • the gel fraction of the pressure-sensitive adhesive was 85%.
  • the gel fraction of the adhesive of the composition which removed the energy beam curable resin from the adhesive was 55%.
  • the adhesive tape for semiconductor processing of the present invention can be suitably used, for example, for processing a semiconductor wafer in a state of being attached to a ring frame and a semiconductor wafer.

Landscapes

  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne une bande adhésive pour la fabrication de semi-conducteurs constituée d'une bande adhésive comprenant un substrat et une couche adhésive disposée sur un côté du substrat, la bande adhésive étant caractérisée en ce que, avant l'irradiation d'énergie de la couche adhésive, la couche adhésive a une fraction de gel de 35 % ou plus, la tangente de perte de la couche adhésive à 50 °C est inférieure à 0,65, et, après l'irradiation d'énergie de la couche adhésive, la force adhésive de la couche adhésive est égale à 3 100 mN/ 25 mm ou moins.
PCT/JP2019/003246 2018-02-07 2019-01-30 Bande adhésive pour la fabrication de semi-conducteurs WO2019155970A1 (fr)

Priority Applications (2)

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JP7205596B1 (ja) 2021-09-30 2023-01-17 住友ベークライト株式会社 粘着テープ
JP7226501B1 (ja) 2021-09-30 2023-02-21 住友ベークライト株式会社 粘着テープおよび粘着テープ用基材

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JP2008027960A (ja) * 2006-07-18 2008-02-07 Nitto Denko Corp 耐熱ダイシングテープ又はシート
JP2009064975A (ja) * 2007-09-06 2009-03-26 Nitto Denko Corp ダイシング用粘着シート及びダイシング方法
JP2011122100A (ja) * 2009-12-11 2011-06-23 Lintec Corp 電子部品加工用粘着シート
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JP7205596B1 (ja) 2021-09-30 2023-01-17 住友ベークライト株式会社 粘着テープ
JP7226501B1 (ja) 2021-09-30 2023-02-21 住友ベークライト株式会社 粘着テープおよび粘着テープ用基材
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JP2023051588A (ja) * 2021-09-30 2023-04-11 住友ベークライト株式会社 粘着テープ

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KR20200115487A (ko) 2020-10-07
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TW201940625A (zh) 2019-10-16
TWI799507B (zh) 2023-04-21

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