WO2019153121A1 - Carte de circuit imprimé hybride - Google Patents

Carte de circuit imprimé hybride Download PDF

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Publication number
WO2019153121A1
WO2019153121A1 PCT/CN2018/075430 CN2018075430W WO2019153121A1 WO 2019153121 A1 WO2019153121 A1 WO 2019153121A1 CN 2018075430 W CN2018075430 W CN 2018075430W WO 2019153121 A1 WO2019153121 A1 WO 2019153121A1
Authority
WO
WIPO (PCT)
Prior art keywords
frequency substrate
high frequency
low frequency
substrate
circuit board
Prior art date
Application number
PCT/CN2018/075430
Other languages
English (en)
Chinese (zh)
Inventor
袁亚兴
商松泉
Original Assignee
深圳市傲科光电子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市傲科光电子有限公司 filed Critical 深圳市傲科光电子有限公司
Priority to PCT/CN2018/075430 priority Critical patent/WO2019153121A1/fr
Publication of WO2019153121A1 publication Critical patent/WO2019153121A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15158—Shape the die mounting substrate being other than a cuboid
    • H01L2924/15159—Side view

Definitions

  • the present application relates to the field of integrated circuit technology, and more particularly to a hybrid printed circuit board for flip chip mounting.
  • a conventional chip module package is composed by using a plurality of integrated circuits (ICs) and a plurality of active and passive electronic components.
  • ICs integrated circuits
  • active and passive electronic components The disadvantages of using these conventional methods are large size, high power consumption, and long signal lines. As the operating frequency continues to increase, it has become a serious problem that limits the performance of the module.
  • MCM Multi-Chip Module
  • Typical MCM substrates widely used in the industry are low temperature co-fired ceramics (LTCC, Co-fired Ceramics), ceramic and laminated fiberglass printed circuit boards, each of which has its advantages and disadvantages:
  • LTCC although it has good radio frequency performance due to low loss tangent constant, the substrate is easily warped, the pattern is lower in precision than the thin film processed ceramic substrate, and the manufacturing cost is high.
  • Ceramic, film-based substrates have the best RF and microwave properties of all of the above materials. but
  • the material itself is very fragile and special attention should be paid to the installation.
  • the thickness of the substrate to be selected is also limited, thus limiting the flexibility of the design.
  • the high frequency single Microlithic Microwave Integrated Circuits The die is mounted on a hybrid substrate composed of ceramic and organic laminated printed wiring boards.
  • the MMIC die and the substrate are electrically connected by a bonding wire. Due to the difference in height between the bond pads typically at the top of the die and the surface of the substrate, and the physical thickness of the MMIC die, the length of the bond wires should not be too short. In practice, the length of the bond wire is approximately Between 50 pm and 100 pm. Due to this lengthy bond wire length and its inherent inherent stray inductance, the system's RF performance is limited. Further, the number of layers of the laminated organic laminated printed wiring board in the structure shown in Fig. 1 is very limited, and it is possible to reduce the complexity of the entire system function, which is not preferable.
  • Flip-chip design is an effective way to reduce the stray inductance produced by bond wires.
  • microwave circuits it is often necessary to create a cavity for electromagnetic wave propagation.
  • the material of a typical high performance substrate e.g., ceramic
  • the height of such a cavity is limited to raised contacts of about 60 pm, making it difficult to optimize RF/microwave performance by varying the height of the cavity.
  • the purpose of the present application is to overcome the deficiencies of the prior art and provide a hybrid printed circuit board for flip chip mounting with low manufacturing cost, complicated circuit function, and better working bandwidth.
  • the present application provides a hybrid printed circuit board including a low frequency substrate, a high frequency substrate, and a monolithic microwave integrated circuit (MMIC, Multi-Chip)
  • MMIC monolithic microwave integrated circuit
  • the MMIC die is mounted on the high frequency substrate, wherein the low frequency substrate comprises a first low frequency substrate and a second low frequency substrate, and the high frequency substrate comprises a first high frequency substrate and a a second high frequency substrate, the first high frequency substrate and the second high frequency substrate are spaced apart from each other and laminated on a surface of the second low frequency substrate, and the first low frequency substrate is laminated on the second low frequency substrate
  • the surface is located between the first high frequency substrate and the second high frequency substrate, the first high frequency substrate, the second high frequency substrate, and the The flip-chip MMIC die, and the first low frequency substrate collectively define a cavity.
  • the first high frequency substrate and the second high frequency substrate surface are respectively provided with a first radiating unit and a second radiating unit, and the MMIC die is close to the cavity.
  • the surface is provided with a third radiating unit, the first radiating unit and the second radiating unit are respectively located at two sides of the cavity, and the MM 1C die is located above the cavity.
  • the first, second, and third radiating units are configured to transmit and receive electromagnetic waves, and the distance between the third radiating element and the first low frequency substrate is half of the electromagnetic wave. An integer multiple of the wavelength.
  • the low frequency substrate includes an N-block laminated low frequency substrate, and the N-block laminated low frequency substrate is sequentially laminated from the first low frequency substrate and the second low frequency substrate.
  • a surface area of the first low frequency substrate is smaller than a surface area of the second low frequency substrate.
  • a gap is disposed between the first high frequency substrate and the second high frequency substrate and the first low frequency substrate.
  • the MMIC die is flip-chip mounted on the first high frequency substrate and the second high frequency substrate by a convex structure.
  • a spacing between the MMIC die and the high frequency substrate is less than or equal to
  • the material of the high frequency substrate is selected from one or more of alumina, aluminum nitride, cerium oxide, quartz, ceramic, and sapphire.
  • the N-layer laminated low-frequency substrates are electrically connected through a through hole formed between the low-frequency substrates and an inner-layer wire passing through the through-hole.
  • the mixed printed circuit board of the present application is provided with a cavity for electromagnetic wave transmission between the low frequency substrate, the high frequency substrate and the MMIC die, and the cavity is made by using the first low frequency substrate of different thicknesses.
  • the height is half of the electromagnetic wavelength, which can effectively reduce the stray inductance, thus obtaining a better working bandwidth and improving the RF performance of the system.
  • the mixed printed circuit board of the present application can arbitrarily increase the substrate The number of layers makes the functional complexity of the circuit improved. In addition, because expensive high-performance materials are used only on critical RF and microwave circuits, costs can be reduced.
  • FIG. 1 is a schematic view showing a conventional hybrid substrate design.
  • FIG. 2 is a schematic view of a hybrid printed circuit board of the present application.
  • FIG. 4 is a frequency response characteristic of two amplifier designs using the hybrid printed circuit board of the present application.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality" is two or more, unless specifically defined otherwise.
  • the terms “installation”, “connected”, “connected”, “fixed” and the like shall be understood broadly, and may be, for example, a fixed connection or a Removable connection, or integrated; can be mechanical connection or electrical connection; it can be directly connected or indirectly connected through an intermediate medium, which can be the internal connection of two elements or the interaction of two elements.
  • the meaning of the above terms in this application can be understood by one of ordinary skill in the art on a case-by-case basis.
  • the present application provides a hybrid printed circuit board comprising a low frequency substrate 10, a high frequency substrate 20, and a monolithic microwave integrated circuit (MMIC, Multi-Chip Module) die 30,
  • the MMIC die 30 is mounted on the high-frequency substrate 20, wherein the low-frequency substrate 10 includes a first low-frequency substrate 10a and a second low-frequency substrate 10b, and the high-frequency substrate 20 includes a first high-frequency substrate 20a and a second high-frequency substrate 20b.
  • the first high frequency substrate 20a and the second high frequency substrate 20b are spaced apart from each other and laminated on one surface of the second low frequency substrate 10b, and the first low frequency substrate 10a is laminated on the surface of the second low frequency substrate 10b and is located at the first high Between the frequency substrate 20a and the second high frequency substrate 20b, the first high frequency substrate 20a, the second high frequency substrate 20b, and the flipped MMIC die 30, and the first low frequency substrate 10a collectively define a cavity 70.
  • the MMIC die 30 passes through the bump
  • the structure 302 is flip-chip mounted on the first high frequency substrate 20a and the second high frequency substrate 20b.
  • the spacing between the MMIC die 30 and the high frequency substrate 20 is less than or equal to 60 ⁇ .
  • the hybrid printed circuit board of the present application is used to implement flip chip mounting.
  • the low frequency substrate 10 may include N pieces of laminated low frequency substrates 10a, 10b ... 10n, the N pieces of laminated low frequency substrates 10a, 10b ... 10n from the first low frequency
  • the substrate 10a and the second low-frequency substrate 10b are sequentially laminated to the N-th low-frequency substrate 10n.
  • these laminate structures can be constructed using common solder paste or conductive silver epoxy.
  • the N-block laminated low-frequency substrates 10a, 10b ... 10n are electrically connected by through holes (not shown) formed between the low-frequency substrates and inner conductors (not shown) passing through the through holes.
  • the low frequency substrate 10 employed in the present application is a low cost organic substrate such as FR-4 (epoxy glass cloth laminate).
  • This organic substrate material provides a low cost, high density circuit solution for printed circuit boards and has been widely used in most electronic systems.
  • the disadvantage is their high frequency characteristics (loss tangent factor), which makes it very expensive to operate at high frequencies above 5 GHz.
  • materials such as alumina, aluminum nitride, cerium oxide, quartz, ceramic or sapphire having excellent material properties (very low loss tangent coefficient) can be used.
  • the thickness of the standard ceramic high-frequency substrate 20 includes: 0.254 mm, 0.381 mm, 0.508 mm, 0.635 mm, 0.762 mm, 1.016 mm, and 2.159 mm, and the first low-frequency substrate 10a may be a low-frequency substrate of different thickness, or may include multiple layers. Different specifications of the low frequency substrate are pressed to obtain the desired height of the cavity 70.
  • the surfaces of the first high-frequency substrate 20a and the second high-frequency substrate 20b are respectively provided with a first radiating unit 200a and a second radiating unit 200b, and the surface of the MMIC die 30 adjacent to the cavity 70 is provided with a third radiating unit 300a, first The radiating element 200a and the second radiating element 200b are respectively located on both sides of the cavity 70, and the MMIC die 30 is located above the cavity 70.
  • the transmitted electromagnetic waves between the first radiating element 200a, the second radiating element 200b, and the third radiating element 300a may reach a fundamental resonance within the cavity 70.
  • the MMIC die 30 is designed to operate at a rate of 64 GBaud, and the electromagnetic wavelength in air is about 5 mm.
  • the cavity 70 should be half the wavelength, ie 2.5. Mm or an integer multiple of this length. This technology provides A low cost method of implementing a microwave cavity amplifier.
  • the surface area of the first low-frequency substrate 20a is smaller than the surface area of the second low-frequency substrate 20b.
  • a gap is provided between the first high-frequency substrate 200a and the second high-frequency substrate 200b and the first low-frequency substrate 10a.
  • FIGS. 3 and 4 compare the frequency response characteristics of two different driver amplifier MMIC designs (Amplifier 1 and Amplifier 2), FIG. 3 shows the frequency response characteristics of two designs using a conventional circuit board, and FIG. 4 represents the use of the present invention.
  • the typical 3dB bandwidth of the amplifier 1 design is increased from 35 GHz to 44
  • the typical 3dB bandwidth of the amplifier 2 design has increased from 27 GHz to 32 GHz, an increase of about 18%.
  • traditional wideband amplifiers can achieve the desired gain without problems. As the frequency increases, the gain gradually decreases and the amplifier circuit cannot keep up with the speed (or frequency). Obviously, these performance improvements are mainly due to the reduction of stray inductance.
  • the hybrid printed circuit board of the present application can achieve higher bandwidth, enabling transmission of higher capacity data without distortion.
  • the hybrid printed circuit board of the present application can be used in any high performance system-in-package (SiP) or multi-chip module (MCM) requiring high operating frequencies (above 10 GHz).
  • the hybrid printed circuit board of the present application can be used in a transmitting module and a receiving module in an optical fiber transmission device, including a modulator driver and a laser diode driver used at the transmitting end, and an integrated photodiode and transimpedance amplifier used at the receiving end.
  • the hybrid printed circuit board of the present application can also be used on a radar or wireless base station, which can be used for power amplifier modules, local oscillator modules, synthesizers, and low noise amplifiers.
  • the present application provides a cavity for electromagnetic wave transmission between a low frequency substrate, a high frequency substrate, and an MMIC die.
  • the height of the cavity is half of the electromagnetic wavelength, Effectively reduce stray inductance, resulting in better operating bandwidth and improved system RF performance.
  • the number of layers of the substrate can be arbitrarily increased, so that the functional complexity of the circuit is improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

L'invention concerne une carte de circuit imprimé hybride, comprenant un substrat basse fréquence (10), un substrat haute fréquence (20) et un grain de circuit intégré hyperfréquence monolithique (30), le grain de circuit intégré hyperfréquence monolithique (30) étant connecté par billes au substrat haute fréquence (20) ; le substrat basse fréquence (10) comprenant un premier substrat basse fréquence (10a) et un second substrat basse fréquence (10b), et le substrat haute fréquence (20) comprenant un premier substrat haute fréquence (20a) et un second substrat haute fréquence (20b) ; le premier substrat haute fréquence (20a) et le second substrat haute fréquence (20b) étant espacés l'un de l'autre et étant stratifiés sur une surface du second substrat basse fréquence (10b) ; le premier substrat basse fréquence (10a) étant stratifié sur la surface du second substrat basse fréquence (10b) et étant situé entre le premier substrat haute fréquence (20a) et le second substrat haute fréquence (20b) ; le premier substrat haute fréquence (20a), le second substrat haute fréquence (20b), le grain de circuit intégré hyperfréquence monolithique connecté par billes (30) et le premier substrat basse fréquence (10a) délimitant conjointement une cavité. La carte de circuit imprimé hybride permet réduire efficacement une inductance parasite, ce qui permet d'obtenir une meilleure largeur de bande de travail et d'améliorer la performance radiofréquence d'un système.
PCT/CN2018/075430 2018-02-06 2018-02-06 Carte de circuit imprimé hybride WO2019153121A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/075430 WO2019153121A1 (fr) 2018-02-06 2018-02-06 Carte de circuit imprimé hybride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/075430 WO2019153121A1 (fr) 2018-02-06 2018-02-06 Carte de circuit imprimé hybride

Publications (1)

Publication Number Publication Date
WO2019153121A1 true WO2019153121A1 (fr) 2019-08-15

Family

ID=67547787

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/075430 WO2019153121A1 (fr) 2018-02-06 2018-02-06 Carte de circuit imprimé hybride

Country Status (1)

Country Link
WO (1) WO2019153121A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514838A (en) * 1994-09-27 1996-05-07 Hughes Aircraft Company Circuit structure with non-migrating silver contacts
US6884656B2 (en) * 1997-05-12 2005-04-26 Ricoh Company, Ltd. Semiconductor device having a flip-chip construction
CN1638117A (zh) * 2004-01-08 2005-07-13 株式会社日立制作所 高频模块
CN102723306A (zh) * 2012-06-28 2012-10-10 中国科学院上海微系统与信息技术研究所 一种利用穿硅通孔的微波多芯片封装结构及其制作方法
US20140374876A1 (en) * 2006-07-03 2014-12-25 Renesas Electronics Corporation Semiconductor device having an inductor
CN106531696A (zh) * 2015-09-09 2017-03-22 美国亚德诺半导体公司 降低噪声和控制频率的电路

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514838A (en) * 1994-09-27 1996-05-07 Hughes Aircraft Company Circuit structure with non-migrating silver contacts
US6884656B2 (en) * 1997-05-12 2005-04-26 Ricoh Company, Ltd. Semiconductor device having a flip-chip construction
CN1638117A (zh) * 2004-01-08 2005-07-13 株式会社日立制作所 高频模块
US20140374876A1 (en) * 2006-07-03 2014-12-25 Renesas Electronics Corporation Semiconductor device having an inductor
CN102723306A (zh) * 2012-06-28 2012-10-10 中国科学院上海微系统与信息技术研究所 一种利用穿硅通孔的微波多芯片封装结构及其制作方法
CN106531696A (zh) * 2015-09-09 2017-03-22 美国亚德诺半导体公司 降低噪声和控制频率的电路

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