WO2019150445A1 - フィルム状接着剤及びその製造方法、並びに半導体装置及びその製造方法 - Google Patents

フィルム状接着剤及びその製造方法、並びに半導体装置及びその製造方法 Download PDF

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Publication number
WO2019150445A1
WO2019150445A1 PCT/JP2018/003022 JP2018003022W WO2019150445A1 WO 2019150445 A1 WO2019150445 A1 WO 2019150445A1 JP 2018003022 W JP2018003022 W JP 2018003022W WO 2019150445 A1 WO2019150445 A1 WO 2019150445A1
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WIPO (PCT)
Prior art keywords
film
adhesive
semiconductor element
wire
mass
Prior art date
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PCT/JP2018/003022
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English (en)
French (fr)
Japanese (ja)
Inventor
大輔 舛野
祐樹 中村
慎太郎 橋本
健太 菊地
智陽 山崎
Original Assignee
日立化成株式会社
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Publication date
Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to KR1020207022892A priority Critical patent/KR102491831B1/ko
Priority to JP2019568438A priority patent/JP7028264B2/ja
Priority to CN201880087615.9A priority patent/CN111656499A/zh
Priority to SG11202007034UA priority patent/SG11202007034UA/en
Priority to PCT/JP2018/003022 priority patent/WO2019150445A1/ja
Priority to TW108101899A priority patent/TW201936828A/zh
Publication of WO2019150445A1 publication Critical patent/WO2019150445A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a film adhesive and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof.
  • silver paste is mainly used for joining a semiconductor chip and a support member for mounting the semiconductor chip.
  • the support members used are also required to be miniaturized and densified.
  • problems such as occurrence of defects during wire bonding due to protrusion of the paste or inclination of the semiconductor chip, difficulty in controlling the film thickness, and generation of voids may occur.
  • a film adhesive for joining a semiconductor chip and a support member has been used (see, for example, Patent Document 1).
  • an adhesive sheet comprising a dicing tape and a film adhesive laminated on the dicing tape
  • the film adhesive is attached to the back surface of the semiconductor wafer, and the semiconductor wafer is separated into pieces by dicing.
  • a semiconductor chip with an adhesive can be obtained.
  • the obtained semiconductor chip with a film adhesive can be attached to a support member via a film adhesive and bonded by thermocompression bonding.
  • the film-like adhesive is used as FOW (Film Over Wire) which is a wire-embedded film-like adhesive or FOD (Film Over Die) which is a semiconductor chip-embedded film-like adhesive
  • FOW Flexible Over Wire
  • FOD Fin Off Die
  • high fluidity is required at the time of thermocompression bonding. Therefore, the frequency and amount of bleed tend to increase further. In some cases, the bleed may occur even on the upper surface of the semiconductor chip, which may lead to electrical failure or wire bonding failure.
  • the present invention has been made in view of such circumstances, and has as its main object to provide a film adhesive capable of suppressing bleeding while having good embedding properties during thermocompression bonding. To do.
  • One aspect of the present invention is a semiconductor device in which a first semiconductor element is wire-bonded to a substrate via a first wire, and a second semiconductor element is pressure-bonded on the first semiconductor element.
  • a film-like adhesive used for pressure-bonding the second semiconductor element and embedding at least a part of the first wire, the first adhesive film being laminated on the first adhesive film A second adhesive film, the solvent content of the film adhesive is 1.5% by mass or less based on the total amount of the film adhesive, and the shear viscosity at 80 ° C. of the film adhesive is 5000 Pa ⁇ s.
  • the following film-like adhesive is provided. According to such a film adhesive, it is possible to suppress bleed while having good embedding property at the time of thermocompression bonding.
  • the thickness of the film adhesive may be 3 to 150 ⁇ m.
  • the storage elastic modulus at 80 ° C. of the film adhesive may be 10 MPa or less.
  • the present invention is a method for producing the above-described film-like adhesive, wherein a varnish of a first adhesive composition containing a solvent is applied onto a substrate, and the applied first adhesive A step of producing a first adhesive film having a solvent content of 1.5% by mass or less based on the total amount of the first adhesive film, and a solvent;
  • the varnish of the second adhesive composition to be applied is applied onto the substrate, the varnish of the applied second adhesive composition is heated and dried at 50 to 150 ° C., and the solvent content is the total amount of the second adhesive film
  • the manufacturing method of a film adhesive provided with the process of producing the 2nd adhesive film which is 1.5 mass% or less on the basis of, and the process of bonding a 1st adhesive film and a 2nd adhesive film I will provide a.
  • the present invention provides a first semiconductor element connected to a substrate via a first wire by wire bonding, and the second semiconductor element is formed on the first semiconductor element in the above-described film form.
  • a semiconductor device in which at least a part of a first wire is embedded in a film adhesive by being pressure-bonded via an adhesive. Even if the semiconductor device is a wire-embedded semiconductor device in which at least a part of the first wire is embedded in a film adhesive, the first wire and the first semiconductor chip are attached to the adhesive film.
  • An embedded chip semiconductor device may be used.
  • the present invention provides a wire bonding step of electrically connecting a first semiconductor element to a substrate via a first wire, and the film adhesive described above on one side of the second semiconductor element.
  • a die bonding process in which at least a part of the first wire is embedded in the film adhesive by press-bonding the second semiconductor element to which the film adhesive is applied and the second semiconductor element to which the film adhesive is applied through the film adhesive.
  • a method of manufacturing a semiconductor device comprising the steps.
  • a film adhesive capable of suppressing bleed while having good embedding property at the time of thermocompression bonding. Moreover, according to this invention, the manufacturing method of such a film adhesive, the semiconductor device using such a film adhesive, and its manufacturing method are provided.
  • FIG. 1 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of
  • (meth) acrylic acid means acrylic acid or methacrylic acid corresponding thereto.
  • FIG. 1 is a schematic cross-sectional view showing a film adhesive according to an embodiment.
  • the film adhesive 10 includes a first adhesive film 2 and a second adhesive film 4 laminated on the first adhesive film 2.
  • the first adhesive film 2 and the second adhesive film 4 are both thermosetting, and can undergo a semi-cured (B stage) state and a fully cured product (C stage) state after the curing process.
  • the adhesive composition and the second adhesive composition can be formed into a film shape.
  • the film adhesive 10 can be produced by laminating the obtained first adhesive film 2 and second adhesive film 4.
  • the first adhesive film 2 and the second adhesive film 4 constituting the film adhesive 10 include a thermosetting resin (hereinafter sometimes simply referred to as “component (a)”) and a high molecular weight component (hereinafter referred to as “component (a)”). It is preferable to contain only “(b) component”) and an inorganic filler (hereinafter sometimes simply referred to as “(c) component”).
  • the first adhesive film 2 and the second adhesive film 4 include a coupling agent (hereinafter sometimes simply referred to as “(d) component”) and a curing accelerator (hereinafter simply referred to as “(e) component”). In some cases).
  • the solvent used when forming the 1st adhesive film 2 and the 2nd adhesive film 4 may remain
  • the solvent content of the film adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 1.5% by mass or less based on the total amount of the film adhesive.
  • the first adhesive film 2 and the second adhesive film 4 may be the same film or different films, but are preferably the same film.
  • the component (a) is an epoxy resin (hereinafter sometimes simply referred to as “(a1) component”) and a phenol resin that can be a curing agent for the epoxy resin (hereinafter simply referred to as “component (a2)”). In some cases).
  • the component (a1) can be used without particular limitation as long as it has an epoxy group in the molecule.
  • the component (a1) for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type Epoxy resin, dicyclopentadiene skeleton-containing epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenolmethane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy Resin, naphthalene type epoxy resin, polyfunctional phenols, polycyclic aromatic diglycidyl ether compounds such as anthracene, etc.You may use these individually by 1 type or in combination of 2 or more types.
  • the component (a1) may be a cresol novolac type
  • the epoxy equivalent of the component (a1) may be 90 to 300 g / eq, 110 to 290 g / eq, or 130 to 280 g / eq.
  • the epoxy equivalent of the component (a1) is in such a range, the fluidity tends to be ensured while maintaining the bulk strength of the film adhesive.
  • the content of the component (a1) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part.
  • the content of the component (a1) is 5 parts by mass or more, the embedding property of the film adhesive tends to be better. It exists in the tendency which can suppress generation
  • the component (a2) can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
  • examples of the component (a2) include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol, and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol, and dihydroxynaphthalene.
  • Phenols such as novolak-type phenolic resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolak, phenol and the like obtained by condensation or cocondensation with a compound having an aldehyde group such as formaldehyde under an acidic catalyst And / or phenol aralkyl resins and naphthol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl. You may use these individually by 1 type or in combination of 2 or more types.
  • the component (a2) may be a phenol aralkyl resin, a naphthol aralkyl resin, or a novolac type phenol resin from the viewpoint of hygroscopicity and heat resistance.
  • the hydroxyl equivalent of the component (a2) may be 80 to 250 g / eq, 90 to 200 g / eq, or 100 to 180 g / eq.
  • the adhesive strength tends to be maintained higher while maintaining the fluidity of the film adhesive.
  • the softening point of the component (a2) may be 50 to 140 ° C, 55 to 120 ° C, or 60 to 100 ° C.
  • the content of the component (a2) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part.
  • the content of the component (a2) is 5 parts by mass or more, better curability tends to be obtained.
  • the content of the component (a2) is 50 parts by mass or less, the embedding property of the film adhesive tends to be better.
  • the ratio of the epoxy equivalent of component (a1) to the hydroxyl equivalent of component (a2) is 0.30 / 0.70 from the viewpoint of curability. ⁇ 0.70 / 0.30, 0.35 / 0.65 ⁇ 0.65 / 0.35, 0.40 / 0.60 ⁇ 0.60 / 0.40, or 0.45 / 0.55 ⁇ It may be 0.55 / 0.45.
  • the equivalent ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained.
  • the equivalent ratio is 0.70 / 0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.
  • the component (b) preferably has a glass transition temperature (Tg) of 50 ° C. or lower.
  • component (b) examples include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, acrylonitrile resins, and modified products thereof.
  • the component may contain an acrylic resin from a fluid viewpoint.
  • the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester.
  • the acrylic resin is preferably a polymer containing a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group as a structural unit.
  • the acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile.
  • the glass transition temperature (Tg) of the acrylic resin may be ⁇ 50 to 50 ° C. or ⁇ 30 to 30 ° C. If the Tg of the acrylic resin is ⁇ 50 ° C. or higher, the flexibility of the adhesive composition tends to be prevented from becoming too high. Thereby, it becomes easy to cut
  • the glass transition temperature (Tg) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).
  • the weight average molecular weight (Mw) of the acrylic resin may be 100,000 to 3 million or 500,000 to 2 million.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
  • acrylic resins examples include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, HTR-860P-3CSP-3DB (all Nagase ChemteX Corporation) Company-made).
  • the content of the component (b) is 5 to 70 parts by mass, 10 to 50 parts by mass, or 15 to 30 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part.
  • the content of the component (b) is 5 parts by mass or more, it is possible to further improve the control of fluidity during molding and the handleability at high temperatures.
  • the content of component (b) is 70 parts by mass or less, the embedding property can be further improved.
  • component (c) for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, Examples thereof include boron nitride and silica. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (c) may be silica from the viewpoint of compatibility with the resin.
  • the average particle diameter of the component (c) may be 0.005 to 1 ⁇ m or 0.05 to 0.5 ⁇ m from the viewpoint of improving adhesiveness.
  • an average particle diameter means the value calculated
  • the content of the component (c) is 5 to 50 parts by mass, 15 to 45 parts by mass, or 25 to 40 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part.
  • the content of the component (c) is 5 parts by mass or more, the fluidity of the film adhesive tends to be further improved.
  • the content of the component (c) is 50 parts by mass or less, the dicing property of the film adhesive tends to be better.
  • the component (d) may be a silane coupling agent.
  • the silane coupling agent include ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like. It is done. You may use these individually by 1 type or in combination of 2 or more types.
  • the content of the component (d) may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total mass of the components (a), (b), and (c).
  • a component is not specifically limited, What is generally used can be used.
  • the component (e) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of reactivity, the component (e) may be imidazoles and derivatives thereof.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, and the like. You may use these individually by 1 type or in combination of 2 or more types.
  • the content of the component (e) may be 0.01 to 1 part by mass with respect to 100 parts by mass of the total mass of the component (a), the component (b), and the component (c).
  • the solvent used when forming the below-mentioned 1st adhesive film 2 and the 2nd adhesive film 4 may remain
  • the solvent is not particularly limited as long as each component can be uniformly dissolved, kneaded or dispersed, and conventionally known solvents can be used.
  • examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N methylpyrrolidone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.
  • the solvent content of the film adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 1.5% by mass or less based on the total amount of the film adhesive.
  • the solvent content may be 1.2 mass% or less, 0.9 mass% or less, or 0.6 mass% or less. When the solvent content is 1.5% by mass or less, bleeding tends to be suppressed.
  • the lower limit of the solvent content is not particularly limited, but may be, for example, 0.01% by mass or more.
  • the thing provided with the 1st adhesive film 2 and the 2nd adhesive film 4 like the film adhesive 10 makes heating-drying conditions high compared with the thing of the same thickness comprised by a single layer. It becomes easy to reduce a solvent content rate.
  • the solvent content rate of the film adhesive 10 can be adjusted by changing the conditions of the heat drying of the varnish of an adhesive composition, for example.
  • the first adhesive film 2 and the second adhesive film 4 may further contain other components.
  • other components include an ion trap agent and a rheology control agent.
  • the content of the other components may be 0.01 to 20 parts by mass with respect to 100 parts by mass as the total mass of the components (a), (b), and (c).
  • the shear viscosity at 80 ° C. of the film adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 5000 Pa ⁇ s or less.
  • the shear viscosity at 80 ° C. may be 3500 Pa ⁇ s or less, 2500 Pa ⁇ s or less, or 1500 Pa ⁇ s or less.
  • the lower limit of the shear viscosity at 80 ° C. is not particularly limited, but may be, for example, 10 Pa ⁇ s or more.
  • the shear viscosity in 80 degreeC can be measured by the method as described in an Example, for example.
  • the shear viscosity at 80 ° C. of the film adhesive 10 tends to depend on, for example, the contents of the above-described component (b) and component (c), and can be adjusted by changing these.
  • the storage elastic modulus at 80 ° C. of the film adhesive 10 may be 10 MPa or less.
  • the storage elastic modulus at 80 ° C. may be 5 MPa or less, 1 MPa or less, or 0.5 MPa or less.
  • the storage elastic modulus at 80 ° C. is 10 MPa or less, the embedding property tends to be excellent.
  • the lower limit value of the storage elastic modulus at 80 ° C. is not particularly limited, but may be, for example, 0.02 MPa or more.
  • the storage elastic modulus at 80 ° C. of the film adhesive 10 can be adjusted, for example, by changing the functional group equivalent of the component (a).
  • the thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be the same or different from each other, but are preferably the same.
  • the thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be 2 to 140 ⁇ m, respectively.
  • the thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be 5 to 110 ⁇ m, 10 to 90 ⁇ m, or 20 to 60 ⁇ m, respectively. When these thicknesses are each 2 ⁇ m or more, the embedding property tends to be better. When these thicknesses are each 140 ⁇ m or less, the solvent content tends to be further reduced.
  • the thickness of the film adhesive 10 (the total thickness of the first adhesive film 2 and the second adhesive film 4) is unevenness such as the first wire and the first semiconductor element, and the wiring circuit of the substrate. May be 3 to 150 ⁇ m in order to allow sufficient filling.
  • the thickness of the film adhesive 10 may be 20 to 140 m or 40 to 130 ⁇ m. When the thickness of the film adhesive 10 is 3 ⁇ m or more, the embedding property tends to be excellent. When the thickness of the film adhesive 10 is 150 ⁇ m or less, bleeding tends to be further suppressed.
  • the film adhesive 10 may be further laminated with an adhesive film on the first adhesive film 2 and the second adhesive film 4. That is, the film adhesive 10 may include an adhesive film having three or more layers. The adhesive film other than the first adhesive film 2 and the second adhesive film 4 may be the same as the first adhesive film 2 and the second adhesive film 4.
  • a method for producing a film-like adhesive is that a varnish of a first adhesive composition containing a solvent is applied onto a substrate, and the varnish of the applied first adhesive composition is dried by heating at 50 to 150 ° C. And a step of producing a first adhesive film having a solvent content of 1.5% by mass or less based on the total amount of the first adhesive film, and a varnish of the second adhesive composition containing the solvent as a base material A second varnish of the applied second adhesive composition is dried by heating at 50 to 150 ° C., and the solvent content is 1.5% by mass or less based on the total amount of the second adhesive film.
  • the process of producing this adhesive film and the process of bonding a 1st adhesive film and a 2nd adhesive film are provided.
  • the varnish of the first adhesive composition and the varnish of the second adhesive composition are, for example, the components (a) to (e) and, if necessary, the components (d) and (e) in a solvent. It can be prepared by mixing and kneading.
  • Mixing and kneading can be performed by using a normal stirrer, a raking machine, a three-roller, a ball mill, or other disperser and appropriately combining them.
  • the solvent for preparing the varnish of the first adhesive composition and the varnish of the second adhesive composition is not particularly limited as long as it can uniformly dissolve, knead or disperse the above components, and is conventionally known. Things can be used.
  • solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N methylpyrrolidone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.
  • a base film For example, a polyester film, a polypropylene film (OPP film etc.), a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, a methylpentene film etc. are mentioned.
  • a method for applying the varnish of the first adhesive composition and the varnish of the second adhesive composition to the base film known methods can be used, for example, a knife coating method, a roll coating method, a spraying method. Examples thereof include a coating method, a gravure coating method, a bar coating method, and a curtain coating method.
  • the drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized.
  • the drying can be performed by heating at 50 to 150 ° C. for 1 to 30 minutes.
  • the heat drying may be performed by raising the temperature stepwise at a temperature within the range of 50 to 150 ° C. By setting the heating temperature to 50 ° C.
  • the solvent content of the first adhesive film 2 and the second adhesive film 4 (film adhesive 10) is 1.5% by mass or less based on the total amount of the film adhesive. It tends to be easier.
  • the heating temperature is set to 150 ° C. or lower, the curing of the adhesive composition tends to be suppressed.
  • the film adhesive 10 bonds the first adhesive film 2 and the second adhesive film 4 under a predetermined condition (for example, room temperature (20 ° C.) or heated state) using a roll laminator, a vacuum laminator, or the like. Can be produced.
  • a predetermined condition for example, room temperature (20 ° C.) or heated state
  • the film adhesive 10 firstly applies the varnish of the first adhesive composition to the base film, removes the solvent by heating and drying to produce the first adhesive film 2, and then the first adhesive It can also be produced by applying a varnish of the second adhesive composition on the adhesive film 2 and removing the solvent by drying by heating to form a second adhesive film.
  • FIG. 2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment.
  • the adhesive sheet 100 includes a base film 20 and a film adhesive 10 made of the first adhesive film 2 and the second adhesive film 4 provided on the base film 20.
  • the base film 20 may be a dicing tape.
  • Such an adhesive sheet can be used as a dicing die bonding integrated adhesive sheet. In this case, since the lamination process to the semiconductor wafer is performed once, the work efficiency can be improved.
  • the dicing tape examples include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film.
  • the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as necessary.
  • the dicing tape is preferably one having adhesiveness.
  • Such a dicing tape may be one obtained by imparting adhesiveness to the above-mentioned plastic film, or may be one obtained by providing an adhesive layer on one side of the above-mentioned plastic film.
  • the adhesive sheet 100 first prepares the first adhesive film 2 by preparing a varnish of the first adhesive composition, applying it to the base film, and removing the solvent by heating and drying. Then, separately, the second adhesive film 4 can be produced from the varnish of the second adhesive composition and can be produced by laminating the second adhesive film 4 on the first adhesive film 2.
  • FIG. 3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment.
  • the adhesive sheet 110 further includes a protective film 30 laminated on the surface of the film adhesive 10 opposite to the base film 20 (surface on the second adhesive film 4 side).
  • the protective film 30 may be the same as the base film 20 described above.
  • the thickness of the protective film may be, for example, 60 to 200 ⁇ m or 70 to 170 ⁇ m.
  • FIG. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment.
  • the first semiconductor element Wa in the first stage is wire-bonded to the substrate 14 via the first wire 88, and the second semiconductor element Waa is formed on the first semiconductor element Wa.
  • the semiconductor device is a semiconductor device in which at least a part of the first wire 88 is embedded in the film adhesive 10 by being pressure-bonded via the film adhesive 10.
  • the semiconductor device is a semiconductor device in which the first wire 88 and the first semiconductor element Wa are embedded even if the semiconductor device is a wire embedded type semiconductor device in which at least a part of the first wire 88 is embedded. May be.
  • the substrate 14 and the second semiconductor element Waa are further electrically connected via the second wire 98, and the second semiconductor element Waa is sealed with the sealing material 42. ing.
  • the thickness of the first semiconductor element Wa may be 10 to 170 ⁇ m, and the thickness of the second semiconductor element Waa may be 20 to 400 ⁇ m.
  • the first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200.
  • the substrate 14 is composed of an organic substrate 90 having two circuit patterns 84 and 94 formed on the surface thereof.
  • the first semiconductor element Wa is pressure-bonded onto the circuit pattern 94 via an adhesive 41.
  • the second semiconductor element Waa is interposed via the film adhesive 10 so that the circuit pattern 94, the first semiconductor element Wa, and the circuit pattern 84 to which the first semiconductor element Wa is not bonded are covered. Crimped to the substrate 14.
  • a film adhesive 10 is embedded in the uneven steps due to the circuit patterns 84 and 94 on the substrate 14.
  • the second semiconductor element Waa, the circuit pattern 84, and the second wire 98 are sealed with a resin sealing material 42.
  • a die-bonding step embedded in the adhesive is
  • the semiconductor device 200 is a semiconductor device in which a first wire 88 and a first semiconductor element Wa are embedded, and is manufactured by the following procedure.
  • the first semiconductor element Wa having the adhesive 41 is crimped onto the circuit pattern 94 on the substrate 14, and the circuit pattern 84 on the substrate 14 and the first pattern are connected to each other via the first wire 88.
  • the first semiconductor element Wa is electrically bonded and connected (first wire bonding step).
  • the adhesive sheet 100 is laminated on one side of a semiconductor wafer (for example, thickness: 50 ⁇ m, size: 8 inches), and the base film 20 is peeled off, whereby the film adhesive 10 (for example, on one side of the semiconductor wafer). , Thickness: 135 ⁇ m). Then, after the dicing tape is bonded to the film adhesive 10, the dicing tape is diced to a predetermined size (for example, 7.5 mm square), whereby the second film adhesive 10 is applied as shown in FIG. The semiconductor element Waa is obtained (laminating step).
  • the temperature condition of the laminating process may be 50-100 ° C or 60-80 ° C.
  • the temperature in the laminating step is 50 ° C. or higher, good adhesion to the semiconductor wafer can be obtained.
  • the temperature of the laminating process is 100 ° C. or lower, the film-like adhesive 10 can be prevented from flowing excessively during the laminating process, so that it is possible to prevent a change in thickness and the like.
  • Examples of the dicing method include blade dicing using a rotary blade, and a method of cutting a film adhesive or both a wafer and a film adhesive with a laser.
  • the second semiconductor element Waa to which the film adhesive 10 is attached is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is bonded via the first wire 88.
  • the first wire 88 and the first semiconductor element Wa are covered with the second semiconductor element Waa to which the film-like adhesive 10 is attached by the film-like adhesive 10.
  • the second semiconductor element Waa is fixed to the substrate 14 by pressing the second semiconductor element Waa to the substrate 14 (die bonding step).
  • the film adhesive 10 is preferably pressure-bonded for 0.5 to 3.0 seconds under conditions of 80 to 180 ° C. and 0.01 to 0.50 MPa.
  • the film adhesive 10 is pressed and heated for 5 minutes or more under the conditions of 60 to 175 ° C. and 0.3 to 0.7 MPa.
  • the circuit pattern 84, the second wire 98 and the second semiconductor element Waa are sealed with a sealing material 42.
  • the semiconductor device 200 can be manufactured through such steps.
  • the semiconductor device may be a wire embedded type semiconductor device in which at least a part of the first wire 88 is embedded.
  • HTR-860P-3CSP (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12 ° C.)
  • SG-70L (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 900,000, Tg: ⁇ 13 ° C.)
  • Example 1 The adhesive composition varnish of Synthesis Example 1 was filtered through a 100 mesh filter and vacuum degassed.
  • the applied varnish was heat-dried in two stages of 90 ° C. for 5 minutes, followed by 140 ° C. for 5 minutes.
  • an adhesive sheet comprising an adhesive film having a thickness of 60 ⁇ m in a B-stage state was obtained on the PET film.
  • two adhesive sheets are prepared, arranged so that the adhesive films are in contact with each other, laminated on a hot plate at 70 ° C., and a film adhesive having a thickness of two layers of 120 ⁇ m is formed.
  • An adhesive sheet provided was prepared.
  • Example 2 Except for changing the varnish of the adhesive composition of Synthesis Example 1 to the varnish of the adhesive composition of Synthesis Example 2, in the same manner as in Example 1, a film-like adhesive having a thickness of 120 ⁇ m consisting of two layers of adhesive films is used. An adhesive sheet comprising the agent was prepared.
  • Example 3 Except for changing the varnish of the adhesive composition of Synthesis Example 1 to the varnish of the adhesive composition of Synthesis Example 3, a film-like adhesive having a thickness of 120 ⁇ m consisting of two layers of adhesive films is the same as Example 1. An adhesive sheet comprising the agent was prepared.
  • Comparative Example 2 Except for changing the two-step heat drying at 90 ° C. for 10 minutes and 150 ° C. for 10 minutes to the two-step heat drying at 120 ° C. for 20 minutes and 160 ° C. for 20 minutes, the same as in Comparative Example 1, On the PET film, an adhesive sheet provided with a film adhesive having a single layer thickness of 120 ⁇ m in a B-stage state was produced.
  • Comparative Example 4 The thickness of the single layer in the B stage state on the PET film in the same manner as in Comparative Example 2 except that the varnish of the adhesive composition of Synthesis Example 1 was changed to the varnish of the adhesive composition of Synthesis Example 3. An adhesive sheet provided with a 120 ⁇ m film adhesive was prepared.
  • the film adhesive of the said adhesive sheet was affixed at 70 degreeC on the semiconductor wafer (8 inches) of thickness 50 micrometers. Next, they were diced to 7.5 mm square to obtain semiconductor elements.
  • a film adhesive HR-9004T-10 manufactured by Hitachi Chemical Co., Ltd., thickness 20 ⁇ m was attached to a semiconductor wafer (8 inches) having a thickness of 50 ⁇ m at 70 ° C. Next, they were diced into 3.0 mm squares to obtain chips.
  • a chip with HR-9004T-10 separated into pieces is pressure-bonded to an evaluation substrate having a maximum surface roughness of 6 ⁇ m under conditions of 130 ° C., 0.20 MPa for 2 seconds, heated at 120 ° C./2 hours, and semi-cured I let you.
  • a 7.5 mm semiconductor element with a film adhesive was pressure-bonded to the sample thus obtained under the conditions of 120 ° C., 0.20 MPa, and 2 seconds.
  • alignment was performed so that the tip with HR-9004T-10 that was previously crimped was centered.
  • the obtained sample was put into a pressure oven, heated from 35 ° C. to 175 ° C. at a heating rate of 3 ° C./min, and heated at 175 ° C. for 30 minutes.
  • the samples thus obtained were observed for the presence or absence of voids using an ultrasonic imaging apparatus SAT (manufactured by Hitachi Construction Machinery, product number FS200II, probe: 25 MHz). If voids were observed, the void area per unit area was calculated, and these analysis results were evaluated as embeddability.
  • the evaluation criteria are as follows. The results are shown in Table 2. A: No void was observed. B: Although voids were observed, the ratio was less than 5 area%. C: A void was observed, and the ratio was 5 area% or more.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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PCT/JP2018/003022 2018-01-30 2018-01-30 フィルム状接着剤及びその製造方法、並びに半導体装置及びその製造方法 WO2019150445A1 (ja)

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JP2019568438A JP7028264B2 (ja) 2018-01-30 2018-01-30 フィルム状接着剤及びその製造方法、並びに半導体装置及びその製造方法
CN201880087615.9A CN111656499A (zh) 2018-01-30 2018-01-30 膜状粘接剂及其制造方法、以及半导体装置及其制造方法
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