WO2019142543A1 - パワー半導体装置 - Google Patents

パワー半導体装置 Download PDF

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Publication number
WO2019142543A1
WO2019142543A1 PCT/JP2018/045404 JP2018045404W WO2019142543A1 WO 2019142543 A1 WO2019142543 A1 WO 2019142543A1 JP 2018045404 W JP2018045404 W JP 2018045404W WO 2019142543 A1 WO2019142543 A1 WO 2019142543A1
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WO
WIPO (PCT)
Prior art keywords
power semiconductor
conductor
semiconductor element
semiconductor device
power
Prior art date
Application number
PCT/JP2018/045404
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
ひろみ 島津
谷江　尚史
晃 松下
Original Assignee
日立オートモティブシステムズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立オートモティブシステムズ株式会社 filed Critical 日立オートモティブシステムズ株式会社
Publication of WO2019142543A1 publication Critical patent/WO2019142543A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body

Definitions

  • the present invention relates to a power semiconductor device, and more particularly to a power semiconductor device used for a power conversion device that controls a motor for driving a vehicle.
  • both the front and back surfaces of the power semiconductor chip are soldered to a conductive plate, and a sealing body sealed with resin in a state where the conductive plate is exposed is a cylinder having a heat dissipation member on both sides. It is housed in a metal case of a mold.
  • the inside of the metal case (heat dissipation member) and the conductor plate are adhered by a heat conductive insulating adhesive (insulation member), and the heat generation of the power semiconductor chip is achieved by the conductor plate on both sides, the heat conductive insulation bond.
  • the heat is dissipated to the outside through the agent (insulation member) and the heat dissipation member.
  • a wiring called a gate finger and a pattern of a wiring protective film for protecting it are formed on the chip surface electrode side (emitter side) of the power semiconductor element.
  • an object of the present invention is to improve the reliability of the chip surface electrode and the conductor connection portion of repeated heat generation (during a power cycle) of the power semiconductor chip.
  • a power semiconductor device comprises: a semiconductor element; and a first conductor and a second conductor respectively connected to the semiconductor element with the semiconductor element interposed therebetween via a solder material.
  • the semiconductor element has a first electrode on one side, a second electrode on the other side, a wire on the one side, and a protective cover covering the wire, and the first conductor is The first conductor is disposed on the one surface side of the semiconductor element, and the first conductor has a protrusion which protrudes from the other portion in a portion facing the protective wedge.
  • the reliability of the power semiconductor device can be improved.
  • FIG. 4 is a longitudinal cross-sectional view of the power module 100 shown in FIG. It is a top view of the power semiconductor element 31 of the power module 100 which concerns on this embodiment. It is the top view and side view which showed only the connection part of the power semiconductor element 31 and the 1st conductor 33. FIG. It is the top view and side view which showed only the connection part of the power semiconductor element 31 and the 1st conductor 33.
  • FIG. 4 is the longitudinal cross-sectional view of the power module 100 shown in FIG. It is a top view of the power semiconductor element 31 of the power module 100 which concerns on this embodiment. It is the top view and side view which showed only the connection part of the power semiconductor element 31 and the 1st conductor 33.
  • FIG. It is the top view and side view which showed only the connection part of the power semiconductor element 31 and the 1st conductor 33.
  • FIG. 4 is a longitudinal cross-sectional view of the power module 100 shown in FIG. It is a top view of the power semiconductor element 31 of the power module 100 which concerns on
  • FIG. 1 It is a graph which shows the result of having evaluated the stress of the electrode film 44 with the case where there is a projection part 33p, and the case where there is no projection part 33p by finite element analysis. It is the top view and side view which showed only the connection part of the power semiconductor element 31 which concerns on 3rd Embodiment, and the 1st conductor 33. FIG. It is the top view and side view which showed only the connection part of the power semiconductor element 31 which concerns on other embodiment, and the 1st conductor 33.
  • Example 1 Hereinafter, an embodiment of a power conversion device according to the present invention will be described with reference to the drawings.
  • FIG. 1 is an external perspective view of a power conversion device 200 according to the present embodiment.
  • FIG. 2 is an exploded perspective view of the power conversion device 200 according to the present embodiment.
  • the power conversion device 200 is used as a power supply device of an electric car or a hybrid car.
  • Power conversion device 200 incorporates an inverter circuit connected to a motor generator, and further includes a booster circuit connected to an external battery and a control circuit for controlling the entire battery.
  • Power converter 200 has a case 201 formed of an aluminum-based metal such as aluminum or an aluminum alloy, and a bottom cover 202 fastened to case 201 by a fastening member (not shown).
  • the housing 201 and the bottom cover 202 can also be formed by integral molding.
  • An upper lid (not shown) is fastened to the upper portion of the housing 201 by a fastening member to form a sealed container.
  • a peripheral wall 211 for forming a cooling flow path is formed, and a cooling space 210 is formed by the peripheral wall 211 and the bottom cover 202.
  • a plurality of (four in FIG. 2) support members 220 having side walls 221 and a plurality of (three in FIG. 2) power modules 100 disposed between the side walls 221 are accommodated. Details of the power module 100 will be described later.
  • a pair of through holes are provided in one side portion of the housing 201, an inlet pipe 203a is provided in one of the through holes, and an outlet pipe 203b is provided in the other of the through holes.
  • a cooling medium such as cooling water flows into the cooling space 210 from the inlet pipe 203a, flows through the cooling path between the side wall 221 of the support member 220 and each power module 100, and flows out from the outlet pipe 203b. .
  • the cooling medium having flowed out of the outlet pipe 203b is cooled by a cooling device such as a radiator (not shown) and circulated again so as to flow into the cooling space 210 from the inlet pipe 203a.
  • a cooling device such as a radiator (not shown)
  • the cooling space 210 is sealed by the cover member 240 with the seal member 231 interposed therebetween.
  • the cover member 240 forms an opening 241 through which the terminal of the power module 100 is inserted.
  • the peripheral portion of the cover member 240 is fixed to an upper portion of the peripheral wall 211 forming the cooling space 210 by a fastening member (not shown).
  • a capacitor module 250 including a plurality of capacitor elements 251 for smoothing DC power supplied to the inverter circuit is housed.
  • the DC side bus bar assembly 261 is disposed on the top of the capacitor module 250 and the power module 100.
  • the DC side bus bar assembly 261 transfers DC power between the capacitor module 250 and the power module 100.
  • a control circuit board assembly 262 including a driver circuit unit that controls the inverter circuit is disposed above the DC side bus bar assembly 261.
  • the AC side bus bar assembly 263 is connected to the power module 100 to transmit AC power. Also, the AC side bus bar assembly 263 has a current sensor.
  • the power module 100 according to the present embodiment will be described based on FIGS. 3 to 6.
  • FIG. 3 is an external front view of the power module 100 according to the present embodiment.
  • FIG. 4 is a longitudinal sectional view of the power module 100 shown in FIG.
  • FIG. 5 is a cross-sectional view of the metal case of the power module 100 according to the present embodiment.
  • FIG. 6 is a cross-sectional view of a power semiconductor module of the power module 100 of the present invention.
  • the power module 100 has a metal case 40 configured of a pair of heat dissipating members 41 having heat dissipating fins 42 and a frame 43.
  • a circuit body containing the power semiconductor element 31 and the like is accommodated.
  • the metal case 40 is, for example, a flat-cylindrical cooler having an insertion port on one side and a bottom on the other side.
  • the metal case 40 is formed of a member having electrical conductivity, for example, a composite material such as Cu, Cu alloy, Cu-C, Cu-CuO, or a composite material such as Al, Al alloy, AlSiC, Al-C, etc. ing.
  • the pair of heat dissipation members 41 is joined to the frame 43.
  • As the bonding for example, FSW (friction stir welding), laser welding, brazing or the like can be applied.
  • FSW frequency stir welding
  • the cooling medium may enter into the power module 100. It can be prevented by a simple configuration.
  • the heat radiating member 41 and the frame 43 may be the same member or may be integrated.
  • the example of the power module in which the opening is in only one direction is shown, but it is also possible to apply to a power module in two directions in which the openings face each other.
  • each of the first conductor 33 and the second conductor 34 is disposed to be opposed to each electrode surface of the power semiconductor element 31, and is joined via the joining material 32.
  • the first conductor 33 is connected to the front surface electrode of the power semiconductor element 31, and the second conductor 34 is connected to the back surface electrode.
  • the first conductor 33 and the second conductor 34 are made of, for example, copper, a copper alloy, aluminum, an aluminum alloy or the like.
  • the bonding material 32 is formed of a solder material or the like.
  • a structure configured of the power semiconductor element 31, the first conductor 33 and the second conductor 34 is sealed by a first sealing resin 6.
  • the upper surface 33 a of the first conductor 33 and the upper surface 34 a of the second conductor 34 are exposed from the first sealing resin 6, and are connected to the heat dissipation member 41 through the thermally conductive insulating layer 51.
  • the insulating layer 51 thermally conducts the heat generated from the power semiconductor element 31 to the heat dissipation member 41, and is formed of a material having a high thermal conductivity and a large withstand voltage.
  • a ceramic such as aluminum oxide (alumina), aluminum nitride, silicon nitride, or an insulating sheet or adhesive containing these fine powders can be used.
  • the gap between the metal case 40 and the insulating layer 51 and the mold resin 6 is filled with the second sealing resin 7.
  • FIG. 5 is a plan view of the power semiconductor element 31 of the power module 100 according to the present embodiment.
  • FIG. 6 is a plan view and a side view showing only the connection portion between the power semiconductor element 31 and the first conductor 33.
  • FIG. 7 is a plan view and a side view showing only the connection portion between the power semiconductor element 31 and the first conductor 33.
  • an electrode film 44 and an electrode pad 47 are formed on the surface of the power semiconductor element 31.
  • a wire 45 and a protective film 46 for protecting the wire 45 are further formed on the surface of the power semiconductor element 31.
  • the electrode film 44 and the wiring 45 are formed of, for example, aluminum, an aluminum alloy, copper, a copper alloy, or the like.
  • a metal film such as nickel may be formed on the surface of the electrode film 44.
  • the protective film 46 is formed of, for example, a polyimide film.
  • a protrusion 33 p is provided on the surface of the first conductor 33 connected to the power semiconductor element 31 at a position facing the protective film 46.
  • the protrusion 33 p is formed to have a width at least equal to or larger than the width of the protective film 46.
  • the side wall 33 b of the protrusion 33 p is provided on the projection plane (the plane parallel to the electrode film 44) to be the same as or outside the side wall 46 a of the protective film 46.
  • the planar pattern of the projecting portion 33 p is provided along the pattern of the protective film 46 provided to cover the upper surface of the wiring 45.
  • both surfaces of the power semiconductor element 31 are connected to a conductor by a bonding material.
  • the power semiconductor element 31 generates heat, the temperature of peripheral members of the power semiconductor element 31 such as the power semiconductor element 31, the bonding material 32 such as solder, the first conductor 33 and the second conductor 34 rises.
  • the linear expansion coefficient of the bonding material 32 such as solder is larger than that of the power semiconductor element 31, the first conductor 33 and the second conductor 34, the amount of expansion is larger than that of other members. Due to the expansion of the bonding material 32, the protective film 46 receives a force, and a stress is generated at the end of the protective film 46.
  • a protrusion 33 p is provided at a position facing the protective film 46.
  • the solder thickness 32b on the protective film 46 can be made thinner than the solder thickness 32a of other parts.
  • the amount of expansion of the solder other than the protruding portion 33p becomes larger than the amount of expansion of the solder near the protruding portion 33p, and the force applied to the protective film 46 near the protruding portion can be reduced.
  • FIG. 8 is a graph showing the result of evaluation of stress of the electrode film 44 with and without the protrusion 33 p by finite element analysis.
  • the stress can be reduced by about 40% when the protrusion is provided as compared with the case where the protrusion is not provided as in the prior art. By thus reducing the stress, it is possible to prevent the fatigue failure of the electrode film at the end of the protective film.
  • the stress generated at the end of the protective film 46 can be reduced, the fatigue failure of the electrode 44 and the bonding material 32 can be prevented, and a highly reliable power semiconductor device can be realized.
  • Example 2 In the first embodiment, an example of the power module in which the second conductor 33 is connected to the power semiconductor element 31 and the insulating layer 51 via the connection portion 32 is shown.
  • FIG. 9 is a cross-sectional view of a power module 100 according to the second embodiment.
  • the second conductor 33 is connected to the surface electrode side of the power semiconductor element 31 via the bonding material 32, and is further connected to the third conductor 35 via the bonding material 38, and the third conductor 35 May be connected to the insulating layer 51.
  • the power module 100 has a metal case 40 composed of a pair of heat dissipating members 41 having heat dissipating fins 42 and a frame 43, and a power semiconductor is provided in the metal case 40. It showed about the case where the module was stored.
  • the power semiconductor module sealed by the first sealing resin 6 is connected to the fourth conductor 36 and the fifth conductor 37 via the insulating layer 51, and further via the bonding portion 39.
  • the cooling unit 48 may be connected.
  • the protrusion 33 p is provided at the position facing the protective film 46 on the surface of the first conductor 33 to which the power semiconductor element 31 is connected.
  • the protrusion is formed to have a width 33a at least equal to or greater than the width of the protective film.
  • the side wall 33 b of the protrusion is provided on the projection plane to be the same as or outside the side wall 46 a of the protective film 46.
  • the planar pattern of the projecting portion 33 p is provided along the pattern of the protective film 46 provided to cover the upper surface of the wiring 45.
  • the planar pattern of the projecting portion 33 p provided on the first conductor 33 entirely covers the pattern of the protective film 46 provided to cover the upper surface of the wiring 45.
  • the protrusion 33p is provided.
  • the stress reduction effect of the electrode film 44 at the end of the protective film 46 is confirmed by stress analysis that the effect is the largest when the protrusion 33 p is provided along the wiring pattern as shown in FIG. .
  • the protruding portion 33 p is provided to cover the entire wiring pattern as in the present embodiment, the stress of the electrode film 44 can be reduced.
  • the planar pattern of the protruding portion 33p is simple, there is an advantage that it is easy to manufacture.
  • the shape of the heat dissipating fins 42 of the heat dissipating member 41 is a pin fin, but it may be another shape, for example, a straight fin or a corrugated fin.
  • the on-vehicle power semiconductor device mounted on an electric car or a hybrid car has been described as an example, but a double-sided cooling type in which a conductor is connected to both sides of the power semiconductor element 31 by a connection portion
  • the present invention can be similarly applied to any power semiconductor device.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
PCT/JP2018/045404 2018-01-17 2018-12-11 パワー半導体装置 WO2019142543A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018005308A JP7030535B2 (ja) 2018-01-17 2018-01-17 パワー半導体装置
JP2018-005308 2018-01-17

Publications (1)

Publication Number Publication Date
WO2019142543A1 true WO2019142543A1 (ja) 2019-07-25

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WO (1) WO2019142543A1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023166635A (ja) * 2020-10-01 2023-11-22 京セラドキュメントソリューションズ株式会社 流体冷却式コールドプレート及び流体冷却式コールドプレートの製造方法
JP7554169B2 (ja) 2021-09-30 2024-09-19 株式会社日立産機システム 電力変換装置
JP2025087361A (ja) * 2023-11-29 2025-06-10 Ａｓｔｅｍｏ株式会社 パワー半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066377A (ja) * 2009-08-18 2011-03-31 Denso Corp 半導体装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066377A (ja) * 2009-08-18 2011-03-31 Denso Corp 半導体装置およびその製造方法

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JP2019125700A (ja) 2019-07-25
JP7030535B2 (ja) 2022-03-07

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