WO2019130740A1 - 吸着チャック - Google Patents

吸着チャック Download PDF

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Publication number
WO2019130740A1
WO2019130740A1 PCT/JP2018/038527 JP2018038527W WO2019130740A1 WO 2019130740 A1 WO2019130740 A1 WO 2019130740A1 JP 2018038527 W JP2018038527 W JP 2018038527W WO 2019130740 A1 WO2019130740 A1 WO 2019130740A1
Authority
WO
WIPO (PCT)
Prior art keywords
suction
suction chuck
elastic member
chuck
peripheral portion
Prior art date
Application number
PCT/JP2018/038527
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
清治 神野
Original Assignee
株式会社Sumco
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Sumco filed Critical 株式会社Sumco
Priority to KR1020207017765A priority Critical patent/KR102340019B1/ko
Priority to DE112018006636.3T priority patent/DE112018006636B4/de
Priority to CN201880083803.4A priority patent/CN111771272B/zh
Publication of WO2019130740A1 publication Critical patent/WO2019130740A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Definitions

  • the present invention relates to a suction chuck.
  • FIG. 1 is a cross-sectional view schematically showing a conventional suction chuck.
  • the conventional suction chuck 11 includes a suction chuck stage 12 having a circular suction surface 12a, and a suction pad 13 provided on the suction surface 12a. Then, the silicon wafer W is mounted on the suction chuck 11 and vacuumed, whereby the silicon wafer W is held by suction on the suction chuck 11.
  • the silicon wafer W is rotated at a high speed while being held by the suction chuck 11 to supply the polishing slurry, and the chamfered portion is polished by pressing the polishing means provided with the polishing pad to the chamfered portion.
  • the polishing slurry is captured between the suction pad and the suction chuck stage by providing the adhesive-free portion on the back side of the outer periphery of the suction pad, and the polishing slurry is between the silicon wafer and the suction pad. It has also been proposed to suppress the entry into (see, for example, Patent Document 1).
  • An object of the present invention is to provide a suction chuck capable of stably holding a silicon wafer and reducing defects in the suction surface.
  • the suction chuck of the present invention comprises: a suction chuck stage having a circular suction surface; And a suction pad provided on the suction surface, An elastic member is further provided between the suction surface and the suction pad at an outer peripheral portion of the suction surface, A height h which is a distance between an inner peripheral portion of the suction surface and a highest point of the elastic member is 1 mm or more. According to the suction chuck of the present invention, defects in the suction surface of the silicon wafer to be suctioned can be reduced.
  • the “peripheral portion of the suction surface” refers to a region from the outer peripheral end of the suction surface to the inner side 10 mm in the radial direction.
  • the “inner circumferential surface of the suction surface” refers to a region radially inward of the outer peripheral portion of the suction surface.
  • the “suction surface” is not limited to a single plane, and includes, for example, two or more flat planes due to the suction chuck stage having a step.
  • the suction chuck stage has a stepped portion formed on the outer peripheral portion.
  • the elastic member is preferably a rubber member.
  • the Shore A hardness of the rubber member is preferably 50 to 70.
  • the height h is preferably 3 mm or less.
  • a suction chuck capable of reducing defects in the suction surface of a silicon wafer to be suctioned.
  • FIG. 1 is a cross-sectional view schematically showing a suction chuck according to an embodiment of the present invention. It is sectional drawing which shows typically the adsorption
  • FIG. 2 is a cross-sectional view schematically showing a suction chuck according to an embodiment of the present invention.
  • the suction chuck 1 includes a suction chuck stage 2 having a circular suction surface 2a, and a suction pad 3 provided on the suction surface 2a.
  • a stepped portion 2 b is formed on the outer peripheral portion.
  • the height of the stepped portion 2b can be, for example, 0.2 to 1.2 mm.
  • the width of the step 2 b can be, for example, 8.0 to 9.0 mm.
  • the shape of the stepped portion 2b is not particularly limited, but the upper surface is preferably flat.
  • an elastic member 4 is provided between the suction surface 2 a and the suction pad 3 in the outer peripheral portion of the suction surface 2 a.
  • the elastic member is a rubber member.
  • the shape and arrangement of the elastic member 4 are not particularly limited.
  • the elastic member 4 is arranged to cover the entire upper surface of the step 2 b, but only a part of the upper surface It can also be arranged to cover.
  • the space between the inner peripheral portion of the suction surface 2 a and the highest point of the elastic member 4 (the point located most in the upper side in FIG. 2).
  • the height h which is a distance is 1 mm or more.
  • the polishing agent is formed on the stepped portions 12b and 2b. Is likely to deposit, and such a phenomenon is likely to occur.
  • the elastic member 4 having the height h of 1 mm or more is provided between the suction surface 2a and the suction pad 3 in the outer peripheral portion of the suction surface 2a. Therefore, the impact of local friction can be mitigated by the elastic member 4, and the occurrence of defects such as contact marks and flaws can be suppressed.
  • the suction pad 3 in contact with the elastic member 4 does not easily deteriorate with time.
  • FIG. 3 is a cross-sectional view schematically showing a suction chuck according to another embodiment of the present invention.
  • the suction chuck 1 includes a suction chuck stage 2 having a circular suction surface 2 a and a suction pad 3 provided on the suction surface 2 a.
  • the suction surface 2a does not have a stepped portion.
  • the suction chuck 1 has an elastic member 4 between the suction surface 2 a and the suction pad 3 in the outer peripheral portion of the suction surface 2 a.
  • the height h which is the distance between the inner circumferential portion of the suction surface 2a and the highest point of the elastic member 4 (the point located at the top in FIG. 3), is 1 mm or more.
  • the elastic member 4 having the height h of 1 mm or more is provided between the suction surface 2 a and the suction pad 3 in the outer peripheral portion of the suction surface 2 a.
  • the impact of local friction can be mitigated by the elastic member, and the occurrence of defects such as contact marks and flaws can be suppressed.
  • the rubber member since the rubber member is used, when the elastic member 4 remains in elastic deformation, the suction pad 3 in contact with the elastic member 4 is unlikely to deteriorate with time, etc., and the member is not easily deformed at the outer peripheral portion. The effect of adsorbing the silicon wafer W can be secured for a long time.
  • the suction chuck stage 2 preferably has a step 2 b formed on the outer peripheral portion. It is advantageous to form the step 2b for adsorbing the silicon wafer W, because the effect of the present invention can be obtained particularly effectively.
  • the elastic member 4 is preferably a rubber member. This is because the members are not easily deformed at the outer peripheral portion due to deterioration with age and the like, and the above-described effect and the effect of adsorbing the silicon wafer W can be ensured for a long time.
  • the Shore A hardness of the rubber member is preferably 50 to 70.
  • the height h of the suction chuck of the present invention may be 1 mm or more, but is preferably 1 mm or more and 3 mm or less.
  • the elastic member 4 may be disposed on at least a portion of the outer peripheral portion of the suction chuck stage 2.
  • the elastic member 4 may be arranged to be present only on the upper surface of the outer peripheral portion of the suction chuck stage 2.
  • Edge polishing time 80 (sec) Slurry (polishing liquid) flow rate: 2.7 ⁇ 0.5 (L / min) Wafer adsorption pressure: 90 (kPa) almost constant slurry (polishing liquid) pH: 9.0-12.00
  • the suction chuck shown in FIG. 2 was used, and in the comparative example, the suction chuck shown in FIG. 1 was used.
  • the height h is 1.2 mm, and in the invention example 2, the height h is 2 mm.
  • ⁇ Suction surface appearance> The number of defects on the adsorption surface of the silicon wafer after chamfering and polishing of the sample number of 20 (10 invention samples and 10 comparison examples) is evaluated using an automatic appearance device for front and back surfaces (Raytex Co., Ltd .: RXM-1200) did.
  • the evaluation results are shown in Table 1 below. In Table 1, the number of defects indicates the average value of each 10 samples.
  • ⁇ Suction surface LPD> The number of LPDs on the adsorption surface of the silicon wafers after the chamfering and polishing of the 20 samples (Invention Example 10 and Comparative Example 10) were evaluated using an LPD inspection apparatus (manufactured by KLA-Tencor: Surfscan SP2). .
  • the evaluation results are shown in Table 1. In Table 1, the number of defects indicates the average value of each 10 samples.
  • suction chuck 2 suction chuck stage 2a: suction surface 2b: step portion 3: suction pad 4: elastic member

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PCT/JP2018/038527 2017-12-27 2018-10-16 吸着チャック WO2019130740A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020207017765A KR102340019B1 (ko) 2017-12-27 2018-10-16 흡착 척
DE112018006636.3T DE112018006636B4 (de) 2017-12-27 2018-10-16 Vakuumchuck
CN201880083803.4A CN111771272B (zh) 2017-12-27 2018-10-16 吸附卡盘

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017251496A JP6881284B2 (ja) 2017-12-27 2017-12-27 吸着チャック
JP2017-251496 2017-12-27

Publications (1)

Publication Number Publication Date
WO2019130740A1 true WO2019130740A1 (ja) 2019-07-04

Family

ID=67066935

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/038527 WO2019130740A1 (ja) 2017-12-27 2018-10-16 吸着チャック

Country Status (6)

Country Link
JP (1) JP6881284B2 (de)
KR (1) KR102340019B1 (de)
CN (1) CN111771272B (de)
DE (1) DE112018006636B4 (de)
TW (1) TWI684240B (de)
WO (1) WO2019130740A1 (de)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253841A (ja) * 2010-05-31 2011-12-15 Sumco Corp ウェーハ保持具
JP2013078810A (ja) * 2011-10-03 2013-05-02 Smc Corp 真空吸着装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011023841A (ja) * 2009-07-14 2011-02-03 New Japan Radio Co Ltd 広帯域利得可変型増幅器
JP2014072510A (ja) * 2012-10-02 2014-04-21 Disco Abrasive Syst Ltd チャックテーブル
KR20150000148A (ko) * 2013-06-24 2015-01-02 한미반도체 주식회사 척테이블 및 척테이블 제조방법
JP6394337B2 (ja) 2014-12-04 2018-09-26 株式会社Sumco 吸着チャック、面取り研磨装置、及び、シリコンウェーハの面取り研磨方法
JP2017123400A (ja) * 2016-01-07 2017-07-13 株式会社ディスコ チャックテーブル

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253841A (ja) * 2010-05-31 2011-12-15 Sumco Corp ウェーハ保持具
JP2013078810A (ja) * 2011-10-03 2013-05-02 Smc Corp 真空吸着装置

Also Published As

Publication number Publication date
JP6881284B2 (ja) 2021-06-02
DE112018006636B4 (de) 2023-08-17
KR20200087849A (ko) 2020-07-21
TWI684240B (zh) 2020-02-01
CN111771272B (zh) 2023-12-05
JP2019117873A (ja) 2019-07-18
DE112018006636T5 (de) 2020-09-10
KR102340019B1 (ko) 2021-12-15
CN111771272A (zh) 2020-10-13
TW201929145A (zh) 2019-07-16

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