WO2019119245A1 - 光学通路调制器及制造方法、图像识别传感器和电子设备 - Google Patents

光学通路调制器及制造方法、图像识别传感器和电子设备 Download PDF

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Publication number
WO2019119245A1
WO2019119245A1 PCT/CN2017/117049 CN2017117049W WO2019119245A1 WO 2019119245 A1 WO2019119245 A1 WO 2019119245A1 CN 2017117049 W CN2017117049 W CN 2017117049W WO 2019119245 A1 WO2019119245 A1 WO 2019119245A1
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Prior art keywords
optical
substrate
light
transmissive layer
path
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PCT/CN2017/117049
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English (en)
French (fr)
Inventor
沈健
王红超
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深圳市为通博科技有限责任公司
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Priority to PCT/CN2017/117049 priority Critical patent/WO2019119245A1/zh
Priority to CN201780002187.0A priority patent/CN110199292B/zh
Publication of WO2019119245A1 publication Critical patent/WO2019119245A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F18/00—Pattern recognition

Definitions

  • the present application relates to chip technology, and in particular, to an optical path modulator and a manufacturing method thereof, an image recognition sensor, and an electronic device.
  • the traditional capacitive fingerprint recognition technology is limited by the penetrating ability, and it is difficult to apply to the screen fingerprint recognition system.
  • the optical fingerprint recognition technology based on optical image recognition sensor can break through the limitation of display screen and glass thickness, so the fingerprint recognition system under the screen has a good application prospect.
  • the optical image recognition sensor of the screen fingerprint recognition system mainly comprises two parts: a fingerprint recognition chip for performing fingerprint image recognition and an optical path modulator for transmitting reflected light formed from the surface of the finger to the fingerprint recognition chip.
  • the optical path modulator has a light collecting path on the structure for collimating, modulating and imaging the light propagating in the path; the fingerprint identifying chip is used for detecting the light transmitted through the optical path modulator and acquiring the fingerprint Image information.
  • the light transmittance of the substrate of the light collecting path ie, the material of the optical path modulator
  • optical path modulators generally use materials such as single crystal silicon which have excellent semiconductor processability and light blocking properties.
  • the optical signal contains different wavelengths of light, in some bands (for example, infrared light), there are still some optical signals that may penetrate the substrate of the light collecting path, and the optical signal that penetrates the substrate will be light.
  • the optical signal in the acquisition path produces interference, which affects the quality of the optical fingerprint image.
  • the present application provides an optical path modulator and a manufacturing method thereof, an image recognition sensor, and an electronic device for solving the problem that the existing optical imaging is easily affected by light transmission interference.
  • a first aspect of the present application is to provide an optical path modulator comprising: a substrate formed with a light collecting path and a non-transmissive layer; the non-transmissive layer covering the substrate except the light collecting On the surface other than the passage.
  • Another aspect of the present application is to provide a method of fabricating an optical path modulator, comprising: forming a light collecting path in a body of a substrate; forming a non-transmissive layer on a surface of the substrate, the non-transmissive layer covering The surface of the substrate other than the light collection path.
  • Yet another aspect of the present application is to provide an image recognition sensor comprising: an optical path modulator, a filter, and an optical detection chip as described above; the optical path modulator is located on the filter for Transmitting an optical signal to the filter through a light collecting path; the filter is located on the optical detecting chip for filtering the optical signal, and transmitting the filtered optical signal to the optical signal
  • the optical detecting chip is configured to perform image recognition according to the filtered optical signal.
  • Still another aspect of the present application is to provide a method of fabricating an image recognition sensor, comprising: laminating an optical path modulator, a filter, and an optical detection chip as described above; wherein the optical path modulator Located on the filter for transmitting an optical signal to the filter through a light collecting path; the filter is located on the optical detecting chip for filtering the optical signal, and Transmitting the filtered optical signal to the optical detecting chip; the optical detecting chip is configured to perform image recognition according to the filtered optical signal.
  • Yet another aspect of the present application is to provide an electronic device comprising: a power source and an image recognition sensor as described above; the image recognition sensor being electrically connected to the power source.
  • the optical path modulator includes a substrate on which a light collecting path is formed and a non-transmissive layer covering the surface of the substrate, the non-transmissive layer Covering the surface of the substrate other than the light collection path.
  • This party The non-transmissive layer in the case can effectively block the optical signal from entering the substrate of the optical path modulator, thereby forming an effective light barrier between the light collecting paths, avoiding interference of optical signals in each light collecting path, and ensuring imaging. Contrast, which effectively improves the quality of optical imaging.
  • FIG. 1 is a schematic structural diagram of an electronic device to which an image recognition sensor according to an embodiment of the present disclosure is applicable;
  • FIG. 2 is a schematic structural diagram of an image recognition sensor according to an embodiment of the present application.
  • 3A-3C are schematic structural diagrams of an optical path modulator according to Embodiment 1 of the present application.
  • 4A-4D are schematic flowcharts of a method for fabricating an optical path modulator according to Embodiment 2 of the present application;
  • 5A-5E are schematic cross-sectional views of an optical path modulator during the execution of the second embodiment
  • FIG. 6A and FIG. 6B are respectively a flow chart and a manufacturing process flowchart of a method for fabricating an optical path modulator according to Embodiment 3 of the present application;
  • FIG. 7A and FIG. 7B are respectively a flow chart and a manufacturing process flowchart of a method for fabricating an optical path modulator according to Embodiment 4 of the present application.
  • the optical path modulator and the image recognition sensor using the optical path modulator can be applied to a smart phone, a tablet computer, and other mobile terminals or other electronic devices having a display screen.
  • the electronic device has a fingerprint identification system, and the fingerprint recognition system may be specifically an optical fingerprint system using the image recognition sensor described above, which may be disposed in a partial area or an entire area below the display screen to form a screen ( Under-display) Optical fingerprint system.
  • FIG. 1 is a schematic structural diagram of an electronic device that can be applied to an embodiment of the present application.
  • the electronic device 100 includes a display screen 120 and an image recognition sensor 130.
  • the image recognition sensor 130 is disposed at least under the display screen 120. Local area.
  • the image recognition sensor 130 may be an optical fingerprint sensor, which includes an optical detection chip 134.
  • the optical detection chip 134 includes a sensing array having a plurality of optical sensing units, and the sensing array is located in the image recognition sensor 130.
  • Fingerprint identification area 103 As shown in FIG. 1 , the fingerprint identification area 103 is located in the display area 102 of the display screen 120.
  • the electronic device 100 adopting the above structure does not need to reserve a space for setting a fingerprint button (such as a Home button) on the front side, so that a full screen scheme, that is, a display area of the display screen 120 can be adopted.
  • a fingerprint button such as a Home button
  • the display screen 120 may be a self-illuminating display screen, which adopts a self-luminous display unit as a display pixel, such as an Organic Light-Emitting Diode (OLED) display or a miniature Light-emitting diode (Micro-LED) display.
  • OLED Organic Light-Emitting Diode
  • Micro-LED miniature Light-emitting diode
  • the image recognition sensor 130 can utilize an OLED display unit (ie, an OLED light source) of the OLED display 120 located in the fingerprint recognition area 103 as an excitation light source for optical fingerprint image detection.
  • the sensing array of the image recognition sensor 130 is specifically a photo detector array comprising a plurality of photodetectors distributed in an array, which can be used as an optical sensing unit as described above.
  • the light emitted by the OLED display unit of the fingerprint recognition area 103 reflects and forms a reflection on the fingerprint of the finger surface.
  • Light wherein the reflected light of the ridges and valleys of the fingerprint of the finger is different, and the reflected light is received by the photodetector array of the optical detecting chip 134 after being passed through the display screen 120 and converted into corresponding Electrical signal, that is, a fingerprint image signal.
  • Fingerprint image data can be obtained based on the fingerprint image signal, and fingerprint matching verification can be further performed, thereby implementing an optical fingerprint recognition function at the electronic device 100.
  • the image recognition sensor 130 may also be disposed over the entire area below the display screen 120, thereby extending the fingerprint recognition area 103 to the entire display area 102 of the display screen 120. Full screen optical fingerprint detection.
  • the electronic device 100 further includes a transparent protective cover 110, and the cover 110 may be a transparent cover, such as a glass cover or a sapphire cover, which is located on the display Above 120 and covering the front side of the electronic device 100. Therefore, in the embodiment of the present application, the so-called finger touch, press or proximity on the display screen 120 actually refers to the finger touching, pressing or approaching the cover plate 110 above the display screen 120 or covering the cover plate.
  • the protective layer surface of 110 is a transparent cover, such as a glass cover or a sapphire cover, which is located on the display Above 120 and covering the front side of the electronic device 100. Therefore, in the embodiment of the present application, the so-called finger touch, press or proximity on the display screen 120 actually refers to the finger touching, pressing or approaching the cover plate 110 above the display screen 120 or covering the cover plate.
  • the protective layer surface of 110 is a transparent cover, such as a glass cover or a sapphire cover, which is located on the display Above 120 and covering the front side of the electronic device 100. Therefore
  • the electronic device 100 may further include a touch sensor, which may be specifically a touch panel, which may be disposed on the surface of the display screen 120, or may be partially or integrally integrated into the display screen 120, that is, The display screen 120 is specifically touched Control the display.
  • a touch sensor which may be specifically a touch panel, which may be disposed on the surface of the display screen 120, or may be partially or integrally integrated into the display screen 120, that is, The display screen 120 is specifically touched Control the display.
  • the image recognition sensor 130 includes an optical detection chip 134 and an optical component 132
  • the optical detection chip 134 includes the sensing array and electrical properties of the sensing array Connected read circuits and/or other auxiliary circuits, which can be fabricated on a single chip (Die) by a semiconductor process.
  • the optical component 132 can be disposed over the sensing array of the optical detection chip 134, which can specifically include a filter and an optical path modulator.
  • the optical component 132 may also include other Necessary optical components or optical film layers.
  • the filter layer can be used to filter out interference light signals, such as ambient light that penetrates the finger and enters the display screen 120 into the image recognition sensor 130, and the optical path modulator can adopt a high aspect ratio.
  • the through-hole array is mainly used for collimating, modulating and imaging the downwardly propagating light, and the reflected light reflected from the surface of the finger is guided to the sensing array for optical detection to obtain fingerprint image information.
  • FIG. 2 is a structural diagram of an image recognition sensor that can be applied to the electronic device shown in FIG. 1 .
  • the image recognition sensor shown in FIG. 2 includes an optical component and an optical detection chip 134, which may include an optical path modulator 41 and a filter 42.
  • the optical path modulator 41 and the filter 42 are disposed in a superposed manner.
  • the optical path modulator 41 is disposed above the filter 42 and the optical detecting chip 134 is disposed. Below the filter 42.
  • the optical path modulator 41 may be specifically fabricated on a semiconductor wafer, silicon carbide, or other substrate 1 that is substantially opaque to wavelengths used for optical imaging; in this embodiment, the substrate The surface of 1 is also covered with a non-transmissive layer 2. Also, the optical path modulator 41 further includes an array of via holes formed between the upper surface and the lower surface of the substrate 1, the array of via holes including a plurality of arrays arranged in an array and having a high aspect ratio A through hole, the plurality of through holes may serve as the light collecting path 11 of the optical path modulator 41. Specifically, the optical path modulator 41 is mainly used for collimating and modulating an optical signal through the optical collection path 11, and guiding the optical signal to the The filter 42 is described.
  • the light signal may specifically mean that the light emitted by the display screen is pressing the display screen.
  • the reflected light formed by the reflection of the surface of the finger to be detected in the fingerprint recognition area.
  • the optical signal may also include other disturbing light.
  • the filter 42 is configured to filter the optical signal to filter out interference light in the optical signal, for example, a part of the band of ambient light may penetrate the finger and enter the image through the display screen. Identifying the sensor, the filter 42 can filter the ambient light to prevent it from being received by the optical detection chip 134 to affect the optical fingerprint imaging effect. It should be understood that the image recognition sensor shown in FIG. 2 is merely an exemplary structure, and in particular implementation, the position of the filter 42 of the optical assembly is not limited to the optical path modulator 41.
  • the filter 42 can also be disposed over the optical path modulator 41, ie between the optical path modulator 41 and the display screen; in another alternative, the filter 42 may specifically include two or more pieces, for example, the two pieces of filter 42 are respectively disposed above and below the optical path modulator 41, or the two pieces of filter The light sheets 42 may be attached together and disposed above or below the optical path modulator 41.
  • the filter 42 can also act as a filter layer and be integrated into the interior of the optical path modulator, and the filter 42 can be omitted even in certain applications.
  • the optical detecting chip 134 is mainly used to receive the reflected light passing through the filter 42 through the sensing array 432, and detect the reflected light to obtain fingerprint image information, thereby implementing optical fingerprint recognition.
  • the optical detecting chip 134 includes a substrate 431 and an inductive array 432 formed on the substrate 431.
  • the sensing array includes a plurality of optical sensing units 433 distributed in an array.
  • the optical sensing unit 433, which may in turn be referred to as a pixel point, can sense the reflected light and convert it into an electrical signal.
  • the optical detecting chip 134 may further include a sensor circuit (such as a readout circuit, a control circuit, or other auxiliary) fabricated on the substrate 431 by a semiconductor process and electrically connected to the optical sensing unit 433. Circuitry), the sensor circuit can process the electrical signal output by the optical sensing unit 433 and obtain a fingerprint image signal.
  • a sensor circuit such as a readout circuit, a control circuit, or other auxiliary
  • the substrate 431 may be a semiconductor element such as single crystal silicon, polycrystalline silicon or amorphous silicon or silicon germanium (SiGe), or may be a mixed semiconductor structure such as silicon carbide, indium antimonide or lead telluride. Indium arsenide, indium phosphide, gallium arsenide or gallium antimonide, alloy semiconductor or a combination thereof. Alternatively, the substrate may be monocrystalline silicon.
  • each of the optical collection paths 11 of the optical path modulator 41 may correspond to one of the optical sensing units 433 of the optical detection chip 134, That is, there is a one-to-one correspondence between the two, for example, each of the optical sensing units 433 is disposed directly below the corresponding light collecting path 11. With the one-to-one correspondence described above, the optical signal passing through the light collecting path 11 of the optical path modulator 41 can be mostly reached and received by the optical sensing unit 433 of the optical detecting chip 134.
  • the optical sensing unit 433 of the optical detecting chip 134 may have the same size as the corresponding light collecting path 11; for example, the light The horizontal projection of the acquisition path 11 at the optical detection chip 134 may be coincident with its corresponding optical sensing unit 433.
  • the optical collection path 11 of the optical path modulator 41 and the optical sensing unit 433 of the optical detection chip 134 may also adopt a non-one-to-one correspondence to reduce the occurrence of moire fringe interference, such as an optical
  • the sensing unit 433 may correspond to the plurality of light collecting paths 11 , or the light collecting path 11 may also be arranged in an irregular manner to have no specific correspondence with the optical sensing unit 433 of the optical detecting chip 134 . relationship.
  • the image recognition sensor may obtain a fingerprint image detected by the optical sensing unit 433 by using a post-software algorithm after obtaining the fingerprint image signal. The signal is corrected.
  • the optical path modulator 41 and the filter 42 may be separate components from the optical detecting chip 134 and attached to the optical detecting chip.
  • the surface of 134 may be separate components from the optical detecting chip 134 and attached to the optical detecting chip.
  • the optical path modulator 41 and the filter 42 may also be integrated inside the optical detecting chip 134 by a semiconductor fabrication process or may be packaged inside the same chip as the optical detecting chip 134.
  • the present application further provides an optical path modulator.
  • the optical path modulator includes: a substrate 1 and a non-transmissive layer 2 formed with a light collecting path 11; among them,
  • the non-transmissive layer 2 covers the surface of the substrate 1 other than the light collecting passage 11; that is, the non-light transmitting layer 2 is formed on the surface of the substrate 1, but does not cover the light collecting passage 11.
  • the substrate may be a semiconductor substrate.
  • the semiconductor substrate may be a semiconductor element, such as single crystal silicon, polycrystalline silicon or amorphous silicon or silicon germanium (SiGe), or may be a mixed semiconductor structure, such as silicon carbide, indium antimonide, lead telluride, Indium arsenide, indium phosphide, gallium arsenide or gallium antimonide, alloy semiconductor or a combination thereof.
  • the substrate 1 may be a single crystal silicon layer or a silicon carbide layer.
  • the non-transmissive layer 2 is a material layer capable of effectively blocking light propagation. As shown in FIG. 3A, since the non-transmissive layer 2 does not cover the light collecting path 11, the light collecting path 11 does not have light blocking, and thus the optical signal can be sufficiently propagated to the light collecting path 11. On the other hand, the surface of the substrate 1 other than the light collecting passage 11 is covered with the non-transmissive layer 2, and the non-transmissive layer 2 can effectively block light from penetrating from the surface of the substrate 1 to the inside of the substrate 1, lowering the base.
  • the light transmittance of the material 1 to prevent external light from penetrating the substrate 1 and entering the light collecting path 1 to interfere with the optical signal transmitted in the light collecting path 11; and, effective optical is formed between the respective light collecting paths 11
  • the barrier ensures the independent propagation of the optical signals in the optical collection path 11, avoids the mutual interference of the optical signals between the adjacent optical collection paths 11, and improves the imaging quality.
  • the optical path modulator is usually assembled with an optical detection chip to form an image recognition.
  • the sensor can be applied to various electronic devices, such as portable small electronic devices such as mobile phones, digital cameras, and tablets, and can be used for optical image acquisition, such as fingerprint collection.
  • the optical signal is usually transmitted through the screen of the electronic device, so the non-transmissive layer 2 in the present embodiment can be disposed on the side of the substrate 1 near the screen.
  • the thickness of the non-transmissive layer 2 can be determined according to the light transmittance and integration requirements of the material, and the device size is considered while ensuring the reduction of the light transmittance.
  • the non-transmissive layer 2 may have a plurality of structures, which may be prepared from a material having a light-shielding property. Further, the non-transmissive layer may have a single layer structure or a laminated structure composed of a plurality of layers. It should be noted that the implementation manners in this solution can be implemented separately, and can also be implemented in combination without conflict.
  • the non-transmissive layer 2 may include a first non-transmissive layer that has a strong reflection effect on incident light, such as a reflective material layer having high reflectivity.
  • the first non-transmissive layer has a strong reflective effect on the optical signal, so that the optical signal incident on the side of the first non-transmissive layer is effectively blocked from being transmitted to the other side of the first non-transmissive layer.
  • the non-transmissive layer 2 may include a metal layer. Further optionally, the metal layer may specifically include a titanium layer. In the present embodiment, the entry of incident light on the surface of the substrate of the non-light collecting passage 11 is weakened by the strong reflection effect of the non-light transmitting layer 2.
  • the non-transmissive layer 2 may include a second non-transmissive layer that has a high absorption of incident light, such as a layer of light absorbing material having a high light absorptivity.
  • the second non-transmissive layer has a high absorption effect on the optical signal, thereby effectively blocking the optical signal incident on the side of the first non-transmissive layer from being transmitted to the other side of the first non-transmissive layer.
  • the non-transmissive layer 2 may include a black rubber layer. Further optionally, the black rubber layer has a light transmittance of less than 10%.
  • the entry of incident light on the surface of the substrate of the non-light collecting passage 11 is weakened by the high absorption effect of the non-light transmitting layer 2.
  • the non-light transmitting layer 2 may also cover the inner sidewall of the light collecting passage 11.
  • the non-transmissive layer 2 may cover the inner side wall of the light collecting passage 11 at the same time except for covering the surface of the non-light collecting passage region of the substrate 1.
  • Inner side wall of the light collecting passage 11 The surface-covered non-transmissive layer 2 can achieve effective optical isolation between the adjacent light collecting paths 11 to prevent the optical signal transmitted by a certain light collecting path 11 from penetrating the substrate 1 from the inner side wall and entering the adjacent light collecting. The path 11 interferes with the optical signal transmitted by the adjacent light collecting path 11, thereby further improving the optical imaging quality.
  • the structure of the light collecting path 11 may be various according to the practical application requirements of the optical path modulator.
  • the optical path modulator when the optical path modulator is applied to an image recognition sensor as shown in FIG. 2, it is only required that most of the optical signals incident from the side of the substrate 1 of the optical path modulator can be collected by light.
  • the passage 11 is capable of reaching an optical detection chip located on the other side of the substrate 1 and is received by the light sensing array of the optical detection chip.
  • the substrate 1 of the optical path modulator may define a light collecting function area, and the light collecting function area may specifically be the light.
  • the light collection function area may include:
  • Each of the through holes 12 corresponds to one light collecting passage 11 , that is, the light collecting passage 11 can be realized by a through hole 12 penetrating through the upper surface and the lower surface of the data substrate 1 .
  • the number of the through holes 12 can be determined according to the accuracy of image recognition, which is not limited herein.
  • the number of the through holes 12 may be plural, and further, the plurality of through holes 12 may be uniformly distributed and the same size.
  • the size of the through hole referred to herein includes the aperture and depth of the through hole.
  • the through hole 12 and the The light sensing units of the sensing array of the optical detecting chip are arranged one-to-one correspondingly, so that the optical signal of the area where each of the through holes 12 is located can be transmitted to the corresponding light sensing unit through the through hole 12 for optical detection.
  • the plurality of through holes 12 may be arranged in an array.
  • the through hole 12 can be opened along the depth direction of the substrate 1 to maximize the luminous flux entering the light collecting channel.
  • the through hole 12 may also be a slanted through hole, that is, the extending direction of the through hole 12 has a certain inclination angle with the surface of the substrate 11; the inclined through hole may be used to make the optical at the same hole depth.
  • the pass modulator has a smaller thickness.
  • the inclined through holes can obtain a thinner image recognition sensor while ensuring the same hole aspect ratio.
  • the optical path modulator can effectively ensure the optical path propagation path and angle of the optical path modulator by designing the tilt angle of the inclined through hole, so that the modulation of the optical path is more flexible, thereby improving the optical imaging quality.
  • the shape of the through hole 12 may be set as needed.
  • the cross section of the through hole 12 may be circular, square or elliptical.
  • the optical path modulator provided in this embodiment includes a substrate on which a light collecting path is formed and a non-light transmitting layer covering the surface of the substrate.
  • the non-transmissive layer in the solution can effectively block the optical signal from entering the substrate of the optical path modulator, thereby forming an effective light barrier between the light collecting paths, avoiding interference of optical signals in each light collecting path, and ensuring imaging.
  • the contrast is thus effective in improving the quality of optical imaging.
  • the embodiment of the present application further provides a method for fabricating an optical path modulator based on the above optical path modulator.
  • FIG. 4A is a schematic flow chart of a method for fabricating an optical path modulator according to Embodiment 2 of the present application.
  • the optical path modulator is provided in the following with reference to FIG. 5A to FIG. 5E.
  • the method is introduced.
  • 5A-5E are schematic cross-sectional views of an optical path modulator in various process steps of an embodiment of a method for fabricating an optical path modulator provided by the present application. As shown in FIG. 4A, the optical path modulator is fabricated Methods include:
  • the substrate may be a semiconductor substrate.
  • the semiconductor substrate may be a semiconductor element, such as single crystal silicon, polycrystalline silicon or amorphous silicon or silicon germanium (SiGe), or may be a mixed semiconductor structure, such as silicon carbide, indium antimonide, lead telluride, Indium arsenide, indium phosphide, gallium arsenide or gallium antimonide, alloy semiconductor or a combination thereof.
  • the substrate 1 may be a single crystal silicon layer or a silicon carbide layer.
  • FIG. 5A a schematic cross-sectional view of the optical path modulator after execution 201 is shown in FIG. 5A, wherein the substrate is denoted by reference numeral 1 and the light collecting path is denoted by reference numeral 11.
  • the light collecting passage at this time does not penetrate the substrate, that is, the light collecting passage at this time is a blind hole formed in the main body of the substrate.
  • the substrate can be thinned to ultimately form a light collection path through the substrate.
  • the material of the non-transparent layer is different, and the relationship between the thinning process and the step of preparing the non-transparent layer is also different.
  • the non-transmissive layer in the prepared optical path modulator is a titanium metal layer.
  • the metal titanium layer can be formed by a deposition process. Therefore, in the process of manufacturing the process, the non-transparent layer can be prepared on the substrate on which the blind via is formed, and then the substrate is thinned until the light collection path penetrates the substrate.
  • An optical path modulator is formed in which the non-transmissive layer is a titanium metal layer.
  • the non-transmissive layer in the prepared optical path modulator is a black rubber layer.
  • the black rubber layer can be formed on the surface of the substrate by a process such as painting, so that the step of performing the steps of the thinning process may not be limited in the process of the manufacturing process.
  • the substrate on which the blind via is formed may be thinned to form a light collecting passage through the substrate, and then the black rubber layer is coated on the surface of the substrate to form an optical path in which the non-transmissive layer is a black rubber layer.
  • Modulator For specific processes and processes of the above two embodiments, refer to the examples of related embodiments to be described later.
  • FIG. 3A a schematic cross-sectional view of the optical path modulator after performing 202 is as shown in FIG. 3A, wherein the non-transmissive layer is denoted by reference numeral 2.
  • the non-transmissive layer may have a plurality of structures, which may be prepared from various materials having light-shielding properties. Further, the non-transmissive layer may have a single layer structure or a laminated structure composed of a plurality of layers. It should be noted that the implementation manners in this solution can be implemented separately, and can also be implemented in combination without conflict.
  • the non-transmissive layer 2 may include a first non-transmissive layer that has a strong reflection effect on incident light.
  • the first non-transmissive layer has a strong reflection effect on the optical signal, so as to effectively block the optical signal incident on the side of the first transparent layer to be transmitted to the other side of the first transparent layer.
  • the non-transmissive layer 2 may include a metal layer.
  • the metal layer may specifically include a titanium layer.
  • the entrance of incident light on the surface of the substrate of the non-light collecting passage is weakened by the strong reflection effect of the non-light transmitting layer.
  • the method for preparing the optical path modulator can be implemented based on a semiconductor fabrication process.
  • 202 specifically includes:
  • 201 may specifically include: providing a substrate, specifically, a schematic cross-sectional view of the optical path modulator after the step is performed. As shown in FIG. 5B, wherein the substrate is denoted by reference numeral 1; a barrier layer is formed on the surface of the substrate, and a portion of the barrier layer is etched until the surface of the substrate is exposed, the partial region corresponding to the light collecting path Specifically, a schematic cross-sectional view of the optical path modulator after the step is performed is shown in FIG.
  • the barrier layer is denoted by reference numeral 3; the exposed substrate surface is etched to form a light collecting path, and the remaining blocking is removed.
  • Layer specifically, a schematic cross-sectional view of the optical path modulator after the execution of this step is shown in FIG. 5A, and the light collection path at this time does not penetrate the substrate. Further optionally, the preparation of the light collection path can be achieved by an anisotropic etching process.
  • the barrier layer is an etch barrier layer having a pattern of light collection paths, which can be used to transfer the target pattern from the reticle to the etched sheet and play a blocking role in the subsequent etching process.
  • the barrier layer may be made of photoresist or hard silicon dioxide (SiO 2 ) or the like.
  • the etching of the light collecting path can adopt the dry deep silicon etching process to realize the fabrication of the high aspect ratio through hole.
  • a non-transmissive layer is formed on the surface of the substrate.
  • a physical weather deposition process may be used to form a non-transparent layer on one side of the substrate.
  • FIG. 5D A schematic cross-sectional view of the optical path modulator after execution of 2021 is shown in FIG. 5D.
  • a non-transmissive layer is deposited on the bottom of the light collection path.
  • the non-transmissive layer deposited on the bottom of the light collecting path may be removed during the process of forming the light collecting passage through the substrate by the back surface thinning process.
  • the cross-sectional schematic of the optical path modulator after 2022 is performed.
  • Figure 3A shows.
  • the non-transmissive layer is a titanium layer.
  • the titanium layer can be formed by a physical vapor deposition (PVD) process to uniformly form a titanium layer on the surface of the substrate.
  • PVD physical vapor deposition
  • the film can be thinned on the front side (ie, on the side close to the light collecting path) to the target thickness to expose the light collecting path on the back surface to form a light collecting path through the substrate.
  • a non-transmissive layer covering the non-light collecting passage region can be formed on the surface of the substrate on which the light collecting passage is formed, and the non-transparent layer is used for strongly reflecting the incident light to avoid the optical signal. Light interference caused by entering the substrate, ultimately improving image quality.
  • the non-transmissive layer 2 may include a second non-transmissive layer that has a high absorption effect on incident light.
  • the second non-transmissive layer has a high absorption effect on the optical signal, thereby effectively blocking the light signal incident on the side of the first light transmissive layer from being transmitted to the other side of the first light transmissive layer.
  • the non-transmissive layer 2 may include a black rubber layer. Further optionally, the black rubber layer has a light transmittance of less than 10%. In the present embodiment, the entry of incident light on the surface of the substrate of the non-light collecting passage is weakened by the high absorption effect of the non-light transmitting layer.
  • the method for preparing the optical path modulator can also be implemented based on a semiconductor fabrication process.
  • 202 specifically includes:
  • 201 may specifically include: providing a substrate, specifically, a section of the optical path modulator after the step is performed.
  • a schematic view is shown in FIG. 5B; a barrier layer is formed on the surface of the substrate, and a portion of the barrier layer is etched until the surface of the substrate is exposed, the partial region corresponding to the light collection path, specifically, after the step is performed
  • a schematic cross-sectional view of the optical path modulator is shown in FIG. 5C, wherein the barrier layer is denoted by reference numeral 3; the exposed substrate surface is etched to form a light collecting path, and the remaining barrier layer is removed.
  • the step is performed.
  • a schematic cross-sectional view of the latter optical path modulator is shown in Figure 5A, at which point the light collection path does not extend through the substrate.
  • the preparation of the light collection path can be achieved by an anisotropic etching process.
  • the barrier layer is an etch barrier layer having a pattern of light collection paths, which can be used to transfer the target pattern from the reticle to the etched sheet and play a blocking role in the subsequent etching process.
  • the barrier layer may be made of photoresist or hard silicon dioxide (SiO 2 ) or the like.
  • the etching of the light collecting path can adopt the dry deep silicon etching process to realize the fabrication of the high aspect ratio through hole.
  • the preparation method of the embodiment after the substrate having the light collection path is prepared, the light collection path through the substrate needs to be formed first, and optionally, the method can still be adopted.
  • the backside thinning process forms a light collecting path through the substrate.
  • a schematic cross-sectional view of the optical path modulator after the step is performed is shown in FIG. 5E.
  • a non-transmissive layer may be formed on the surface of the substrate by a spraying or spin coating process.
  • FIG. 3A a schematic cross-sectional view of the optical path modulator after the step is performed is shown in FIG. 3A, wherein the non-transmissive layer is denoted by reference numeral 2. .
  • the non-transparent layer is a black rubber layer.
  • a black rubber is uniformly formed on the surface of the substrate by a spraying or spin coating process.
  • the black rubber layer can be uniformly formed on the surface of the non-light collecting passage by forming the black rubber component and optimizing the spraying process to achieve no hole blocking at the position of the light collecting passage.
  • the embodiment it is possible to form a cover on the surface of the substrate on which the light collecting path is formed.
  • the non-transmissive layer of the light collecting passage region is used for high absorption of incident light to avoid light interference caused by the light signal entering the substrate, thereby ultimately improving image quality.
  • the non-transmissive layer 2 may also cover the sidewall of the light collecting passage.
  • the non-transmissive layer may cover the sidewall of the light collecting path to prevent the optical signal transmitted through the light collecting path from interfering with the adjacent light through the substrate of the sidewall.
  • the optical signal in the path is collected to further improve the imaging quality.
  • 202 may specifically include:
  • Non-transmissive layer Forming a non-transmissive layer on the substrate, the non-transmissive layer covering a surface of the substrate other than the light collection path and a sidewall of the light collection path.
  • FIG. 3B a schematic cross-sectional view of the optical path modulator after the step is performed is shown in FIG. 3B.
  • the preparation process of the non-transparent layer in this embodiment can be implemented by various processes, and details are not described herein again.
  • the structure of the light collecting path 11 may be various, as long as the light passes through the light collecting path 31 to reach the light sensing area of the optical detecting chip.
  • 201 may specifically include:
  • the substrate is etched to form at least one through hole; each through hole corresponds to one light collecting path.
  • the light passing through the through hole 12 reaches the light sensing area of the optical detecting chip, thereby performing image recognition.
  • the etching of the via holes may be performed by an anisotropic etching process.
  • the through hole 12 in order to adapt to the transmission direction of the incident light, the through hole 12 can be opened along the depth direction of the substrate to maximize the luminous flux entering the light collection channel.
  • the shape of the through hole 12 may be set as needed.
  • the cross section of the through hole may be circular, square or elliptical.
  • the preparation method of the present embodiment is used to prepare an optical path modulator as described above, and the specific preparation flow and process employed may be based on the structure setting of the optical path modulator.
  • the optical path modulator obtained by the method includes a substrate formed with a light collecting path and a non-transmissive layer covering the surface of the substrate, the non-transmissive layer covering the base The material is on the surface other than the light collecting passage.
  • Non-transparent layer energy in this scheme Effectively blocking the optical signal from entering the substrate of the optical path modulator, thereby forming an effective light barrier between the light collecting paths, avoiding interference of optical signals in each light collecting path, ensuring contrast of imaging, thereby effectively improving optical imaging the quality of.
  • FIG. 6A and FIG. 6B are respectively a flow chart and a manufacturing process flow chart of a method for fabricating an optical path modulator according to Embodiment 3 of the present application.
  • the structure of the optical path modulator obtained after each step in the flow chart of the manufacturing method can refer to the manufacturing process.
  • the optical path modulator provided by this embodiment includes:
  • the material of the substrate may be silicon, silicon carbide or the like.
  • the barrier layer may be a photoresist or a hard-line silicon oxide SiO 2 or the like.
  • the substrate can be etched by a dry deep silicon etch process, which enables the fabrication of high aspect ratio vias.
  • the titanium layer can be fabricated by a PVD process to uniformly form a titanium layer on the surface of the substrate; after the titanium layer is formed, the front surface film is thinned to the target thickness, that is, the through hole on the back surface can be exposed, and light passing through the substrate can be prepared.
  • the acquisition path is finally completed; the optical path modulator is finally packaged and packaged with the optical detection chip.
  • the manufacturing process of the optical path modulator is exemplified by taking the non-transmissive layer as a black rubber layer as an example.
  • 7A and 7B are respectively a flow chart and a manufacturing process flow chart of a method for fabricating an optical path modulator according to Embodiment 4 of the present application, and an optical path obtained after each step in the flow chart of the manufacturing method is performed.
  • the structure of the modulator can be referred to the corresponding content in the production process flow chart.
  • the optical path modulator provided by this embodiment includes:
  • the material of the substrate may be a material that is easy to be processed and etched, such as silicon or silicon carbide. Specifically, the depth of the etch can be consistent with the target thickness of the optical path modulator desired to be obtained.
  • the barrier layer can block in subsequent etching processes. In practical applications, etching can be performed by dry deep silicon etching to achieve high aspect ratio etching.
  • the back surface of the substrate is thinned to expose the through holes to form a light collecting passage through the substrate, and then a black glue is uniformly formed on the upper surface of the substrate by a spraying or spin coating process. In practical applications, through the optimization of the suitable black rubber component and the spraying process, the hole is not blocked at the through hole position, and a layer of black rubber is uniformly formed in the non-porous region.
  • a fifth embodiment of the present invention provides a schematic flowchart of a method for fabricating an image recognition sensor, where the method includes:
  • optical path modulator, the optical filter, and the optical detecting chip are packaged and packaged;
  • the optical path modulator is located on the filter for transmitting an optical signal to the filter through a light collecting path;
  • the filter is disposed on the optical detecting chip for filtering the optical signal, and Transmitting the filtered optical signal to the optical detection chip;
  • the optical detecting chip is configured to perform image recognition according to the filtered optical signal.
  • the light passing through the light collecting path of the optical path modulator passes through the filter to the optical detecting chip, thereby performing image recognition.
  • the integrated circuit transistor in the optical detection chip can be located in the substrate.
  • the fabrication of integrated circuit transistors in a substrate can be implemented using current integrated circuit fabrication processes. Based on the integrated circuit fabrication process, the associated transistors and circuitry of the optical inspection chip can be fabricated in the substrate.
  • the optical detecting chip may include an identifying circuit readout circuit for performing image recognition, and the circuit principle of the readout circuit readout circuit may refer to an existing optical image recognition device.
  • the optical detection chip may include: formed on the lining a bottom identification circuit readout circuit (not shown) and a light sensing area electrically connected to the identification circuit readout circuit, wherein the pixel points in the light sensing area are arranged in one-to-one correspondence with the light collecting path; the light sensing area And the optical signal transmitted on the optical collection path is filtered by the filter, and then the optical signal is transmitted to the identification circuit readout circuit; the identification circuit readout circuit is configured to receive the The light signal is image-recognized.
  • the substrate may be a semiconductor element such as single crystal silicon, polycrystalline silicon or amorphous silicon or silicon germanium (SiGe), or a mixed semiconductor structure such as silicon carbide, indium antimonide, lead telluride, arsenic. Indium, indium phosphide, gallium arsenide or gallium antimonide, alloy semiconductors or combinations thereof.
  • the substrate may be monocrystalline silicon.
  • the preparation method of the present embodiment is used to prepare an image recognition sensor as described above, and the specific preparation process and process employed may be based on the structural setting of the image recognition sensor.
  • the image recognition sensor preparation method provided by the embodiment provides an optical path modulator in the image recognition sensor, which comprises a substrate formed with a light collection path and a non-transmissive layer covering the surface of the substrate, the non-transparent layer covering the substrate The surface of the substrate other than the light collecting passage.
  • the non-transmissive layer in the solution can effectively block the optical signal from entering the substrate of the optical path modulator, thereby forming an effective light barrier between the light collecting paths, avoiding interference of optical signals in each light collecting path, and ensuring imaging.
  • the contrast is thus effective in improving the quality of optical imaging.
  • Embodiment 6 of the present application provides an electronic device, including: a power source; and an image recognition sensor according to any of the foregoing embodiments;
  • the image recognition sensor is electrically connected to the power source.
  • the electronic device may be an electronic device such as a mobile phone or a tablet computer, and the electronic device can support a touch function.
  • An image recognition sensor is installed in the electronic device for implementing an image recognition function such as fingerprint recognition, and a power source is used to supply power to the image recognition sensor.
  • the image recognition sensor may be disposed under the touch screen of the electronic device. For example, when a user places a finger on an area of a touch screen of an electronic device, fingerprint recognition can be implemented by the image recognition sensor. In practical applications, image recognition can be used for scenes such as fingerprint matching, unlocking the screen, and user authentication.
  • the optical path modulator includes a substrate formed with a light collection path and a non-transmissive layer covering the surface of the substrate, the non-transmissive layer covering the substrate The surface of the substrate other than the light collecting passage.
  • the non-transmissive layer can effectively block the optical signal from entering the substrate of the optical path modulator, thereby forming an effective light barrier between the light collecting paths, thereby avoiding interference of optical signals in the respective light collecting paths.
  • the optical path modulator includes a substrate formed with a light collection path and a non-transmissive layer covering the surface of the substrate, the non-transmissive layer covering the substrate On the surface other than the light collection path.
  • the non-transmissive layer in the solution can effectively block the optical signal from entering the substrate of the optical path modulator, thereby forming an effective light barrier between the light collecting paths, avoiding interference of optical signals in each light collecting path, and ensuring imaging.
  • the contrast is thus effective in improving the quality of optical imaging.

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Abstract

一种光学通路调制器（41）及制作方法、图像识别传感器（130）和电子设备（100），光学通路调制器（41）包括：形成有光采集通路（11）的基材（1）和非透光层（2）；非透光层（2）覆盖于基材（1）上除光采集通路（11）以外的表面上。非透光层（2）能够有效阻挡光信号进入光学通路调制器（41）的基材（1），从而在各光采集通路（11）之间形成有效的光阻隔，避免各光采集通路（11）中的光信号产生干扰，保证成像的对比度，从而有效提高光学成像的质量。

Description

光学通路调制器及制造方法、图像识别传感器和电子设备 技术领域
本申请涉及芯片技术，尤其涉及一种光学通路调制器及制作方法、图像识别传感器和电子设备。
背景技术
随着具有大屏占比的全面屏的广泛应用，移动终端对屏下指纹识别的设计需求越来越多，传统电容式指纹识别技术面临穿透能力的限制，难以应用在屏下指纹识别系统，而基于光学图像识别传感器的光学指纹识别技术可以较好地突破了显示屏和玻璃厚度的限制，因此在屏下指纹识别系统具有较好的应用前景。
屏下指纹识别系统的光学图像识别传感器主要包括两部分：用于进行指纹图像识别的指纹识别芯片和用于将从手指表面形成的反射光传输至指纹识别芯片的光学通路调制器。
其中，光学通路调制器在结构上具有光采集通路，用于对通路中传播的光线进行准直、调制和成像等功能；指纹识别芯片用于检测通过光学通路调制器传输的光线并获取到指纹图像信息。从器件性能上考虑，光采集通路的基材(即光学通路调制器的材料)的透光率要越低越好，以减弱光采集通路之间光的相互干扰从而提高成像效果。实际应用中，光学通路调制器通常采用单晶硅等具有优良的半导体可加工性以及遮光性的材料。
但是，由于光信号中包含不同波段的光，在某些波段上(例如，红外光)还是存在部分光信号有可能会穿透光采集通路的基材，透进基材的光信号会对光采集通路中的光信号产生干扰，影响光学指纹成像质量。
发明内容
本申请提供一种光学通路调制器及制作方法、图像识别传感器和电子设备，用于解决现有的光学成像容易被透光干扰影响的问题。
本申请的第一个方面是提供一种光学通路调制器，包括：形成有光采集通路的基材和非透光层；所述非透光层覆盖于所述基材上除所述光采集通路以外的表面上。
本申请的另一个方面是提供一种光学通路调制器的制造方法，包括：在基材的主体形成光采集通路；在所述基材的表面形成非透光层，所述非透光层覆盖所述基材除所述光采集通路以外区域的表面。
本申请的又一个方面是提供一种图像识别传感器，包括：如前所述的光学通路调制器、滤光片以及光学检测芯片；所述光学通路调制器位于所述滤光片上，用于通过光采集通路将光信号传输至所述滤光片；所述滤光片位于所述光学检测芯片上，用于对所述光信号进行滤光，并将滤光后的光信号传输至所述光学检测芯片；所述光学检测芯片，用于根据滤光后的光信号进行图像识别。
本申请的又一个方面是提供一种图像识别传感器的制造方法，包括：将如前所述的光学通路调制器、滤光片以及光学检测芯片进行贴合封装；其中，所述光学通路调制器位于所述滤光片上，用于通过光采集通路将光信号传输至所述滤光片；所述滤光片位于所述光学检测芯片上，用于对所述光信号进行滤光，并将滤光后的光信号传输至所述光学检测芯片；所述光学检测芯片，用于根据滤光后的光信号进行图像识别。
本申请的又一个方面是提供一种电子设备，包括：电源以及如前所述的图像识别传感器；所述图像识别传感器与所述电源电连接。
本申请提供的光学通路调制器及制作方法、图像识别传感器和电子设备中，光学通路调制器包括形成有光采集通路的基材以及覆盖于基材表面的非透光层，该非透光层覆盖所述基材上除所述光采集通路以外的表面上。本方 案中的非透光层能够有效阻挡光信号进入光学通路调制器的基材，从而在各光采集通路之间形成有效的光阻隔，避免各光采集通路中的光信号产生干扰，保证成像的对比度，从而有效提高光学成像的质量。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本申请的一些实施例，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的图像识别传感器可以适用的电子设备的结构示意图；
图2为本申请实施例提供的一种图像识别传感器的结构示意图；
图3A～图3C为本申请实施例一提供的光学通路调制器的结构示意图；
图4A～图4D为本申请实施例二提供的光学通路调制器制作方法的流程示意图；
图5A-图5E为实施例二执行过程中光学通路调制器的剖面示意图；
图6A和图6B分别为本申请实施例三提供的光学通路调制器的制作方法流程图和制作工艺流程图；
图7A和图7B分别为本申请实施例四提供的光学通路调制器的制作方法流程图和制作工艺流程图。
附图标记：
1-基材；        11-光采集通路；        12-通孔；
2-非透光层；    3-阻挡层；             41-光学通路调制器；
42-滤光片；     134-光学检测芯片；     431-衬底；
432-光感应区；  433-像素点位。
具体实施方式
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本申请保护的范围。为了方便说明，放大或者缩小了不同层和区域的尺寸，所以图中所示大小和比例并不一定代表实际尺寸，也不反映尺寸的比例关系。
作为一种常见的应用场景，本申请实施例涉及的光学通路调制器以及采用所述光学通路调制器的图像识别传感器可以应用在智能手机、平板电脑以及其他具有显示屏的移动终端或者其他电子设备；更具体地，上述电子设备具有指纹识别系统，所述指纹识别系统可以具体为采用上述图像识别传感器的光学指纹系统，其可以设置在显示屏下方的局部区域或者全部区域，从而形成屏下(Under-display)光学指纹系统。
如图1所示为本申请实施例可以适用的电子设备的结构示意图，该电子设备100包括显示屏120和图像识别传感器130，其中，所述图像识别传感器130至少设置在所述显示屏120下方的局部区域。所述图像识别传感器130可以具体为光学指纹传感器，其包括光学检测芯片134，所述光学检测芯片134包括具有多个光学感应单元的感应阵列，所述感应阵列所在区域为所述图像识别传感器130的指纹识别区域103。如图1所示，所述指纹识别区域103位于所述显示屏120的显示区域102之中，因此，使用者在需要对所述电子设备100进行指纹解锁或者其他指纹验证的时候，只需要将手指按压在位于所述显示屏120的指纹识别区域103，便可以实现指纹输入。由于指纹检测可以在屏内实现，因此采用上述结构的电子设备100无需其正面专门预留空间来设置指纹按键(比如Home键)，从而可以采用全面屏方案，即所述显示屏120的显示区域102可以基本扩展到整个电子设备100的正面。
作为一种优选的实施例中，所述显示屏120可以为自发光显示屏，其采用具有自发光显示单元的作为显示像素，比如有机发光二极管(Organic Light-Emitting Diode，OLED)显示屏或者微型发光二极管(Micro-LED)显示屏。以采用OLED显示屏为例，所述图像识别传感器130可以利用所述OLED显示屏120位于所述指纹识别区域103的OLED显示单元(即OLED光源)来作为光学指纹图像检测的激励光源。并且，所述图像识别传感器130的感应阵列具体为光探测器(Photo detector)阵列，其包括多个呈阵列式分布的光探测器，所述光探测器可以作为如上所述的光学感应单元。当手指触摸、按压或者接近(为便于描述，本申请统称为触摸)在所述指纹识别区域103时，所述指纹识别区域103的OLED显示单元发出的光线在手指表面的指纹发生反射并形成反射光，其中所述手指指纹的纹脊和纹谷的反射光是不同的，反射光从所述显示屏120穿过之后被所述光学检测芯片134的光探测器阵列所接收并转换为相应的电信号，即指纹图像信号。基于所述指纹图像信号便可以获得指纹图像数据，并且可以进一步进行指纹匹配验证，从而在所述电子设备100实现光学指纹识别功能。
在其他替代实施例中，所述图像识别传感器130也可以设置在所述显示屏120下方的整个区域，从而将所述指纹识别区域103扩展到整个所述显示屏120的整个显示区域102，实现全屏光学指纹检测。
应当理解的是，在具体实现上，所述电子设备100还包括透明保护盖板110，所述盖板110可以具体为透明盖板，比如玻璃盖板或者蓝宝石盖板，其位于所述显示屏120的上方并覆盖所述电子设备100的正面。因此，在本申请实施例中，所谓的手指触摸、按压或者接近在所述显示屏120实际上是指手指触摸、按压或者接近在所述显示屏120上方的盖板110或者覆盖所述盖板110的保护层表面。另外，所述电子设备100还可以包括触摸传感器，所述触摸传感器可以具体为触控面板，其可以设置在所述显示屏120表面，也可以部分或者整体集成到所述显示屏120内部，即所述显示屏120具体为触 控显示屏。
作为一种可选的实现方式，如图1所示，所述图像识别传感器130包括光学检测芯片134和光学组件132，所述光学检测芯片134包括所述感应阵列以及与所述感应阵列电性连接的读取电路和/或其他辅助电路，其可以在通过半导体工艺制作在一个芯片(Die)。所述光学组件132可以设置在所述光学检测芯片134的感应阵列的上方，其可以具体包括滤光层(Filter)和光学通路调制器，可选地，所述光学组件132可能还会包括其他必要的光学元件或光学膜层。其中，所述滤光层可以用于滤除干扰光信号，比如穿透手指并进过所述显示屏120进入所述图像识别传感器130的环境光，而所述光路调制器可以采用具有高深宽比的通孔阵列，主要用于对向下传播的光线进行准直、调制和成像等，实现将从手指表面反射回来的反射光导引至所述感应阵列进行光学检测以获取指纹图像信息。
请参阅图2，其为可以适用于图1所示的电子设备的图像识别传感器的结构示意图。图2所示图像识别传感器包括光学组件和光学检测芯片134，所述光学组件可以包括光学通路调制器41和滤光片42。所述光学通路调制器41和所述滤光器42叠合设置，在本实施例中，所述光学通路调制器41设置在所述滤光片42的上方，而所述光学检测芯片134设置在所述滤光片42的下方。
其中，所述光学通路调制器41可以具体为在半导体硅片、碳化硅或者其他对光学成像所用的波长基本不透光的基材1制作而成的；在本实施例中，所述基材1的表面还覆盖有非透光层2。并且，所述光学通路调制器41还包括形成在所述基材1的上表面和下表面之间的通孔阵列，所述通孔阵列包括呈阵列式排布且具有高深宽比的多个通孔，所述多个通孔可以作为所述光学通路调制器41的光采集通路11。具体地，所述光学通路调制器41主要用于通过所述光采集通路11对光信号进行准直和调制，并将所述光信号导引至所 述滤光片42。当所述图像识别传感器应用在如图1所示的电子设备并作为设置在显示屏下方的光学指纹传感器时，所述光信号可以具体是指所述显示屏发出的光线在按压所述显示屏的指纹识别区域的待检测手指表面发生反射而形成的反射光。应当理解的是，在实际应用环境下，所述光信号可能还会包括其他干扰光。
所述滤光片42用于对所述光信号进行滤光处理以滤除所述光信号中的干扰光，比如环境光的部分波段可能会穿透手指并经过所述显示屏进入所述图像识别传感器，所述滤光片42可以将上述环境光滤除以免其被所述光学检测芯片134接收而影响光学指纹成像效果。应当理解，图2所示的图像识别传感器仅是一种示例性的结构，在具体实现上，该光学组件的滤光片42的位置并不局限在所述光学通路调制器41的下方。比如，在一种替代实施例中，该滤光片42也可以设置在所述光学通路调制器41上方，即位于所述光学通路调制器41和所述显示屏之间；在另一种替代实施例中，所述滤光片42具体可以包括两片或者多片，比如，所述两片滤光片42分别设置在所述光学通路调制器41的上方和下方，或者所述两片滤光片42可以贴合在一起并设置在所述光学通路调制器41的上方或者下方。在其他替代实施例中，所述滤光片42也可以作为滤光层并集成到光路调制器内部，甚至在某些应用环境下所述滤光片42也可以省略掉。
所述光学检测芯片134主要用于通过其感应阵列432接收穿透所述滤光片42的反射光，并对所述反射光进行检测以获取指纹图像信息，从而实现光学指纹识别。具体地，如图2所示，所述光学检测芯片134包括衬底431以及形成在所述衬底431的感应阵列432，所述感应阵列包括多个呈阵列式分布的光学感应单元433，所述光学感应单元433又可以称为像素点位(Pixel)，其可以将所述反射光进行感应并将其转换为电信号。进一步地，所述光学检测芯片134还可以包括通过半导体工艺制作在所述衬底431并与所述光学感应单元433电信连接的传感器电路(比如读出电路、控制电路或者其他辅助 电路)，所述传感器电路可以对所述光学感应单元433输出的电信号进行处理，并得到指纹图像信号。
其中，所述衬底431可以为半导体元素，例如单晶硅、多晶硅或非晶结构的硅或硅锗(SiGe)，也可以为混合的半导体结构，例如碳化硅、锑化铟、碲化铅、砷化铟、磷化铟、砷化镓或锑化镓、合金半导体或其组合。可选的，衬底可以为单晶硅。
在图2所示的实施例提供的所述图像识别传感器中，所述光学通路调制器41的每一个光采集通路11可以分别与所述光学检测芯片134的其中一个光学感应单元433相对应，即二者之间是一一对应的关系，比如每一个光学感应单元433设置在其对应的光采集通路11的正下方。采用上述一一对应的关系可以使得穿过所述光学通路调制器41的光采集通路11的光信号大部分可以抵达并被所述光学检测芯片134的光学感应单元433接收。
可选的，为了进一步提高所述光学通路调制器41的光采集通路11的光通量，所述光学检测芯片134的光学感应单元433与其对应的光采集通路11的尺寸可以相同；比如，所述光采集通路11在所述光学检测芯片134的水平投影可以是与其对应的光学感应单元433是重合的。
可替代地，所述光学通路调制器41的光采集通路11跟所述光学检测芯片134的光学感应单元433之间也可以采用非一一对应的关系来降低产生莫尔条纹干扰，比如一个光学感应单元433可以对应于多个光采集通路11，或者，所述光采集通路11也可以采用不规则排列的方式来实现跟所述光学检测芯片134的光学感应单元433之间不具有特定的对应关系。当所述光学通路调制器41的光采集通路11采用不规则排列方式时，所述图像识别传感器在获得指纹图像信号之后，可以通过后期软件算法来对所述光学感应单元433检测到的指纹图像信号进行校正。
另一方面，在具体实现上，所述光学通路调制器41和所述滤光片42可以是与所述光学检测芯片134相独立的部件并且贴合在所述光学检测芯片 134的表面。可替代地，所述光学通路调制器41和所述滤光片42也可以通过半导体制作工艺集成在所述光学检测芯片134的内部，或者跟所述光学检测芯片134封装同一个芯片内部。
为保证本申请提供的上述图像识别传感器的光学成像质量，本申请还进一步提供一种光学通路调制器。
图3A为本申请实施例一提供的一种光学通路调制器的结构示意图，如图3A所示，该光学通路调制器包括：形成有光采集通路11的基材1和非透光层2；其中，
非透光层2覆盖于基材1上除所述光采集通路11以外的表面；即非透光层2形成在基材1的表面，但不覆盖所述光采集通路11。
其中，所述基材可以为半导体基材。具体的，半导体基材可以为半导体元素，例如单晶硅、多晶硅或非晶结构的硅或硅锗(SiGe)，也可以为混合的半导体结构，例如碳化硅、锑化铟、碲化铅、砷化铟、磷化铟、砷化镓或锑化镓、合金半导体或其组合。可选的，基材1可以为单晶硅层或者碳化硅层。
具体的，非透光层2为能够有效阻挡光传播的材料层。如图3A所示，由于非透光层2并不覆盖光采集通路11，光采集通路11不存在光线阻挡，因此光信号可以充分传播至光采集通路11。另一方面，在除了光采集通路11以外的基材1表面覆盖有非透光层2，非透光层2可以有效阻挡光线从基材1的表面穿透至基材1的内部，降低基材1的光透过率，从而避免外界光穿透基材1并进入光采集通路1而对在光采集通路11传输的光信号造成干扰；并且，在各个光采集通路11之间形成有效光学阻隔，保证光采集通路11中光信号的独立传播，避免相邻的光采集通路11之间的光信号相互干扰，提高成像质量。
实际应用中，该光学通路调制器通常配合光学检测芯片组装成图像识别 传感器，该图像传感器可以应用在各种电子设备，例如，手机、数码相机、平板电脑等便携式小型电子设备，可用于进行光学图像采集，例如指纹采集等。在这些应用场景下，光信号通常是通过电子设备的屏幕传入，故本方案中的非透光层2可以设置在基材1靠近屏幕的一面。其中，非透光层2的厚度可以根据材料的透光性能和集成要求确定，在保证降低透光率的同时考虑器件尺寸。
可选的，非透光层2的结构可以有多种，其可以由具备遮光特性的材料制备而成。此外，该非透光层既可以为单层结构，也可以为多个层构成的层叠结构。需要说明的是，本方案中的实施方式可以单独实施，在不冲突的前提下也可以结合实施。
作为一种可实施的方式，非透光层2可以包括对入射光具有强反射作用的第一非透光层，比如具有高反射率的反射材料层。具体的，第一非透光层对光信号具有强反射效果，从而有效阻挡第一非透光层一侧入射的光信号传达至第一非透光层的另一侧。可选的，非透光层2可以包括金属层，进一步可选的，该金属层具体可以包括钛层。本实施方式通过非透光层2的强反射效果来减弱在非光采集通路11的基材表面入射光的进入。
作为另一种可实施的方式，非透光层2可以包括对入射光具有高吸收作用的第二非透光层，比如具有高光吸收率的吸光材料层。具体的，第二非透光层对光信号具有高吸收效果，从而有效阻挡第一非透光层一侧入射的光信号传达至第一非透光层的另一侧。可选的，非透光层2可以包括黑胶层，进一步可选的，该黑胶层的光通过率低于10％。本实施方式通过非透光层2的高吸收效果来减弱在非光采集通路11的基材表面入射光的进入。
可选的，为了进一步提高基材1在非光采集通路区域的遮光效果，在一种替代实施例中，如图3B所示，非透光层2还可以覆盖光采集通路11的内侧壁。具体的，除了覆盖基材1的非光采集通路区域的表面以外，非透光层2还可以同时覆盖在光采集通路11的内侧壁。所述光采集通路11的内侧壁 表面覆盖的非透光层2可以在相邻光采集通路11之间实现有效的光学隔离，避免某个光采集通路11传输的光信号从其内侧壁穿透基材1并进入相邻光采集通路11，而对相邻光采集通路11传输的光信号造成干扰，从而进一步提高光学成像质量。
进一步的，在具体实施例中，根据光学通路调制器的实际应用需求，光采集通路11的结构可以有多种。比如，当所述光学通路调制器应用在如图2所示的图像识别传感器时，其只要使得从所述光学通路调制器的基材1的一侧入射的光信号绝大部分可以通过光采集通路11，并能够抵达位于所述基材1另一侧的光学检测芯片，并且被所述光学检测芯片的光感应阵列所接收。可选的，在前述任一实施方式的基础上，如图3C所示，所述光学通路调制器的基材1可以定义有光线采集功能区，所述光线采集功能区具体可以是所述光采集通路11所在的区域。具体地，所述光线采集功能区可以包括：
形成于基材1上的至少一个通孔12，所述通孔12贯穿基材1；
其中，每个通孔12分别对应一个光采集通路11，也即是说，所述光采集通路11具体可以是通过贯穿所数据基材1的上表面和下表面的通孔12来实现。
具体的，通孔12的数量可以根据图像识别的精度确定，在此不对其进行限制。为了提高光的均匀性，通孔12的数量可以为多个，进一步可选地，多个通孔12可以均匀分布且尺寸相同。这里所说的通孔的尺寸包括通孔的孔径和深度。可选地，当所述光学通路调制器应用在如上所述的图像识别传感器时，为了提高经过通孔12传输并被光学检测芯片的感应阵列接收到的光信号的光通量，通孔12与所述光学检测芯片的感应阵列的光感应单元之间一一对应设置，以使每一个通孔12所在区域的光信号可以通过所述通孔12传输至相应的光感应单元，进行光学检测以实现光学成像。可选地，多个通孔12可以呈阵列排列。
实际应用中，为了适应光信号的入射方向，通孔12可以沿基材1的深度方向开设，以最大限度地提高进入光采集通道的光通量。可替代地，通孔12也可以是倾斜通孔，即通孔12的延伸方向与基材11的表面之间具有一定的倾斜角度；采用倾斜通孔可以在相同孔深的情况下使得该光学通路调制器具有更小的厚度。换句话说，倾斜通孔在保证相同的孔深宽比的情况下，可以得到更薄的图像识别传感器。另外，光学通路调制器通过设计倾斜通孔的倾斜角度可以有效保证所述光学通路调制器的光路传播路径和角度，使其对光路的调制更为灵活，从而提高光学成像质量。
可选的，通孔12的形状可以根据需要设置，举例来说，通孔12的截面可以呈圆形、方形或者椭圆形。
本实施例提供的光学通路调制器，包括形成有光采集通路的基材以及覆盖于基材表面的非透光层。本方案中的非透光层能够有效阻挡光信号进入光学通路调制器的基材，从而在各光采集通路之间形成有效的光阻隔，避免各光采集通路中的光信号产生干扰，保证成像的对比度，从而有效提高光学成像的质量。
应当理解的是，采用常规的半导体制作工艺一般难以实现在基材表面覆盖非透光层的同时还在基材主体上形成高精度的光采集通路，因此难以制作出本申请实施例提供的光学通路调制器。有鉴于此，基于上述光学通路调制器，本申请实施例还进一步提供了一种光学通路调制器的制作方法。
图4A为本申请实施例二提供的一种光学通路调制器的制作方法的流程示意图，为了对本实施例的技术方案描述更加清楚，以下结合图5A-图5E对本申请提供光学通路调制器的制作方法进行介绍。其中，图5A-图5E为本申请提供的光学通路调制器的制作方法的实施例在各个工艺步骤阶段中光学通路调制器的剖面示意图。如图4A所示，该光学通路调制器的制作 方法包括：
201、在基材的主体形成光采集通路；
202、在所述基材的表面形成非透光层，所述非透光层覆盖所述基材除所述光采集通路以外区域的表面。
其中，所述基材可以为半导体基材。具体的，半导体基材可以为半导体元素，例如单晶硅、多晶硅或非晶结构的硅或硅锗(SiGe)，也可以为混合的半导体结构，例如碳化硅、锑化铟、碲化铅、砷化铟、磷化铟、砷化镓或锑化镓、合金半导体或其组合。可选的，基材1可以为单晶硅层或者碳化硅层。
具体的，执行201之后的所述光学通路调制器的剖面示意图如图5A所示，其中，所述基材用标号1表示，光采集通路用标号11表示。如图中所示，此时的光采集通路并未穿透基材，即此时的光采集通路为形成于基材主体的盲孔。后续，可以对基材进行减薄，最终形成贯穿基材的光采集通路。另外，非透光层的材质不同，减薄工艺与非透光层制备工艺的步骤关系也不同。
一种实施方式中，制备的光学通路调制器中非透光层为金属钛层。金属钛层可通过沉积工艺形成，故在工艺制作流程中，可以在形成有盲孔的基材上，先制备非透光层，之后再对基材进行减薄，直至光采集通路贯穿基材，形成非透光层为金属钛层的光学通路调制器。
另一种实施方式中，制备的光学通路调制器中非透光层为黑胶层。黑胶层可在基材表面通过涂刷等工艺形成，故在工艺制作流程中，可以不限定减薄工艺的步骤执行顺序。举例来说，可以先对形成有盲孔的基材进行减薄，形成贯穿基材的光采集通路，之后在基材表面涂刷黑胶层，形成非透光层为黑胶层的光学通路调制器。上述两种实施方式的具体流程和工艺，可参见后述相关实施例的示例。
具体的，执行202之后的所述光学通路调制器的剖面示意图如图3A所示，其中，非透光层用标号2表示。
可选的，非透光层的结构可以有多种，其可以由各种具备遮光特性的材料制备而成。此外，该非透光层既可以为单层结构，也可以为多个层构成的层叠结构。需要说明的是，本方案中的实施方式可以单独实施，在不冲突的前提下也可以结合实施。
作为一种可实施的方式，非透光层2可以包括对入射光具有强反射作用的第一非透光层。具体的，第一非透光层对光信号具有强反射效果，从而有效阻挡第一透光层一侧入射的光信号传达至第一透光层的另一侧。可选的，非透光层2可以包括金属层，进一步可选的，该金属层具体可以包括钛层。本实施方式通过非透光层的强反射效果来减弱在非光采集通路的基材表面入射光的进入。
相应的，上述实施方式下，光学通路调制器的制备方法可以基于半导体制备工艺实现。可选的，如图4B所示，202具体可以包括：
2021、采用物理气相沉积工艺，在所述基材的一面表面上形成所述金属层；
2022、对所述基材的另一面进行减薄，直至露出所述光采集通路。
可选的，制备光学通路调制器的过程中，201的实现流程可以有多种，举例来说，201具体可以包括：提供基材，具体的，该步骤执行后的光学通路调制器的剖面示意图如图5B所示，其中，基材用标号1表示；在所述基材表面形成阻挡层，并对阻挡层的部分区域进行刻蚀直至露出基材表面，所述部分区域与光采集通路对应，具体的，该步骤执行后的光学通路调制器的剖面示意图如图5C所示，其中阻挡层用标号3表示；对露出的基材表面进行刻蚀，形成光采集通路，并去除剩余的阻挡层，具体的，该步骤执行后的光学通路调制器的剖面示意图如图5A所示，此时的光采集通路并未贯穿基材。进一步可选的，光采集通路的制备可以采用各向异性刻蚀工艺实现。
其中，阻挡层为具有光采集通路图形的刻蚀阻挡层，可用于将目标图形从光罩上转移到刻蚀片上并在后续的刻蚀工艺中起到阻挡作用。可选 的，阻挡层可以采用光刻胶或者硬膜二氧化硅(SiO2)等。其中，光采集通路的刻蚀可以采用干法深硅刻蚀工艺来实现高深宽比通孔的制作。
可选的，在制备出具有光采集通路的基材后，在基材的表面形成非透光层，可选的，可以采用物理气象沉积工艺，在基材的一面形成非透光层，具体的，2021执行后的光学通路调制器的剖面示意图如图5D所示，如图中所示，由于本实施方式中采用的是沉积工艺，因此会在光采集通路的底部沉积有非透光层。后续，可以通过背面减薄工艺，在形成贯穿基材的光采集通路的过程中，去除沉积在光采集通路底部的非透光层，具体的，2022执行后的光学通路调制器的剖面示意图如图3A所示。
以非透光层为钛层举例来说，钛层可以采用物理气相沉积(PVD)工艺制作，以在基材表面均匀形成钛层。钛层制作完毕后，可以在正面(即贴近光采集通路的一面)贴膜进行背面减薄至目标厚度以露出背面的光采集通路形成贯穿基材的光采集通路。
通过本实施方式，可以在形成有光采集通路的基材表面上形成覆盖于非光采集通路区域的非透光层，该非透光层用于对入射光进行强反射作用，以避免光信号进入基材导致的光干扰，从而最终提高成像质量。
作为另一种可实施的方式，非透光层2可以包括对入射光具有高吸收作用的第二非透光层。具体的，第二非透光层对光信号具有高吸收效果，从而有效阻挡第一透光层一侧入射的光信号传达至第一透光层的另一侧。可选的，非透光层2可以包括黑胶层，进一步可选的，该黑胶层的光通过率低于10％。本实施方式通过非透光层的高吸收效果来减弱在非光采集通路的基材表面入射光的进入。
相应的，上述实施方式下，光学通路调制器的制备方法同样可以基于半导体制备工艺实现。可选的，如图4C所示，202具体可以包括：
2023、对所述基材远离光采集通路的一面进行减薄处理，直至露出所述光采集通路；
2024、采用喷涂或者旋涂工艺，在所述基材另一面除所述光采集通路以外的表面上形成所述黑胶层。
同样可选的，制备光学通路调制器的过程中，201的实现流程可以有多种，举例来说，201具体可以包括：提供基材，具体的，该步骤执行后的光学通路调制器的剖面示意图如图5B所示；在所述基材表面形成阻挡层，并对阻挡层的部分区域进行刻蚀直至露出基材表面，所述部分区域与光采集通路对应，具体的，该步骤执行后的光学通路调制器的剖面示意图如图5C所示，其中阻挡层用标号3表示；对露出的基材表面进行刻蚀，形成光采集通路，并去除剩余的阻挡层，具体的，该步骤执行后的光学通路调制器的剖面示意图如图5A所示，此时的光采集通路并未贯穿基材。进一步可选的，光采集通路的制备可以采用各向异性刻蚀工艺实现。
其中，阻挡层为具有光采集通路图形的刻蚀阻挡层，可用于将目标图形从光罩上转移到刻蚀片上并在后续的刻蚀工艺中起到阻挡作用。可选的，阻挡层可以采用光刻胶或者硬膜二氧化硅(SiO2)等。其中，光采集通路的刻蚀可以采用干法深硅刻蚀工艺来实现高深宽比通孔的制作。
与前一实施方式的制备方法不同的是，本实施方式的制备方法中，在制备出具有光采集通路的基材后，需要先形成贯穿基材的光采集通路，可选的，仍然可以通过背面减薄工艺，形成贯穿基材的光采集通路，具体的，该步骤执行后的光学通路调制器的剖面示意图如图5E所示。后续，可以采用喷涂或者旋涂工艺在基材表面形成非透光层，具体的，该步骤执行后的光学通路调制器的剖面示意图如图3A所示，其中，非透光层用标号2表示。
以非透光层为黑胶层举例来说，在制备出形成有贯穿基材的光采集通路的基材后，采用喷涂或者旋涂工艺在基材表面均匀形成黑胶。可选的，可以通过配制黑胶成分和优化喷射工艺达到在光采集通路的位置不堵孔，从而在非光采集通路的基材表面均匀形成黑胶层。
通过本实施方式，可以在形成有光采集通路的基材表面上形成覆盖于非 光采集通路区域的非透光层，该非透光层用于对入射光进行高吸收作用，以避免光信号进入基材导致的光干扰，从而最终提高成像质量。
可选的，为了进一步提高非光采集通路区域的遮光效果，非透光层2还可以覆盖光采集通路的侧壁。具体的，除了覆盖基材上非光采集通路的表面，非透光层还可以覆盖光采集通路的侧壁，以避免光采集通路中传输的光信号透过侧壁的基材干扰相邻光采集通路中的光信号，从而进一步提高成像质量。相应的，202具体可以包括：
形成位于所述基材上的非透光层，所述非透光层覆盖所述基材上除所述光采集通路以外的表面以及所述光采集通路的侧壁。
具体的，该步骤执行后的光学通路调制器的剖面示意图如图3B所示。该实施方式下非透光层的制备流程可以通过多种工艺实现，在此不再赘述。
进一步的，光采集通路11的结构可以有多种，只要使得光通过光采集通路31能够抵达光学检测芯片的光感应区。可选的，在前述任一实施方式的基础上，如图4D所示，201具体可以包括：
2011、对基材进行刻蚀，形成至少一个通孔；每个通孔对应一个光采集通路。
具体的，通过通孔12的光抵达光学检测芯片的光感应区，进而进行图像识别。可选的，通孔的刻蚀可以采用各向异性刻蚀工艺。实际应用中，为了适应入射光线的传输方向，通孔12可以沿基材的深度方向开设，以最大限度地提高进入光采集通道的光通量。可选的，通孔12的形状可以根据需要设置，举例来说，通孔的截面可以呈圆形、方形或者椭圆形。
具体的，本实施例的制备方法用于制备如前所述的光学通路调制器，其采用的具体制备流程和工艺可以基于光学通路调制器的结构设定。
本实施例提供的光学通路调制器的制备方法，制备获得的光学通路调制器包括形成有光采集通路的基材以及覆盖于基材表面的非透光层，该非透光层覆盖所述基材上除所述光采集通路以外的表面上。本方案中的非透光层能 够有效阻挡光信号进入光学通路调制器的基材，从而在各光采集通路之间形成有效的光阻隔，避免各光采集通路中的光信号产生干扰，保证成像的对比度，从而有效提高光学成像的质量。
下面，以非透光层为钛层为例，对光学通路调制器的制作过程进行示例。图6A和图6B分别为本申请实施例三提供的光学通路调制器的制作方法流程图和制作工艺流程图，制作方法流程图中各步骤执行后获得的光学通路调制器的结构可以参照制作工艺流程图中的相应内容。如图6A所示，本实施例提供的光学通路调制器的制作方法包括：
601、提供基材；
602、在所述基材表面形成阻挡层，并对阻挡层的部分区域进行刻蚀直至露出基材表面，所述部分区域与光采集通路对应；
603、对露出的基材表面进行刻蚀，形成光采集通路，并去除剩余的阻挡层；此时，光采集通路并未贯穿基材；
604、采用物理气相沉积工艺，在所述基材的一面表面上形成钛层；
605、对所述基材的另一面进行减薄，直至露出所述光采集通路。
具体的，基材的材料可以是硅、碳化硅等。所述阻挡层可以采用光刻胶或者硬膜氧化硅SiO2等。对基材进行刻蚀可以采用干法深硅刻蚀工艺，该工艺能够实现高深宽比通孔的制作。钛层可以采用PVD工艺制作，从而在基材表面均匀形成一层钛层；钛层制作完毕，正面贴膜进行背面减薄至目标厚度，即能够露出背面的通孔，制备出贯穿基材的光采集通路；最后将光学通路调制器与光学检测芯片进行贴合封装。
另外，以非透光层为黑胶层为例，对光学通路调制器的制作过程进行示例。图7A和图7B分别为本申请实施例四提供的光学通路调制器的制作方法流程图和制作工艺流程图，制作方法流程图中各步骤执行后获得的光学通路 调制器的结构可以参照制作工艺流程图中的相应内容。如图7A所示，本实施例提供的光学通路调制器的制作方法包括：
701、提供基材；
702、在所述基材表面形成阻挡层，并对阻挡层的部分区域进行刻蚀直至露出基材表面，所述部分区域与光采集通路对应；
703、对露出的基材表面进行刻蚀，形成光采集通路，并去除剩余的阻挡层；此时，光采集通路并未贯穿基材；
704、对所述基材远离光采集通路的一面进行减薄处理，直至露出所述光采集通路；此时，光采集通路贯穿基材。
705、采用喷涂或者旋涂工艺，在所述基材另一面除所述光采集通路以外的表面上形成黑胶层。
其中，基材的材料可以是硅，碳化硅等易于加工刻蚀的材料。具体的，刻蚀的深度可以与希望获得的光学通路调制器的目标厚度一致。过程中，阻挡层在后续的刻蚀工艺中能够起到阻挡作用。实际应用中，刻蚀可以采用干法深硅刻蚀实现高深宽比的刻蚀。刻蚀完成后，对基材背面减薄至露出通孔，形成贯穿基材的光采集通路，再采用喷涂或者旋涂工艺在基材的上表面均匀的形成黑胶。实际应用中，通过合适的黑胶成分和喷射工艺的优化实现在通孔位置不堵孔，在非孔区域均匀形成一层黑胶。
本发明实施例五提供一种图像识别传感器制作方法的流程示意图，，该方法包括：
将如前述任一实施方式所述的光学通路调制器、滤光片以及光学检测芯片进行贴合封装；其中，
所述光学通路调制器位于所述滤光片上，用于通过光采集通路将光信号传输至所述滤光片；
所述滤光片位于所述光学检测芯片上，用于对所述光信号进行滤光，并 将滤光后的光信号传输至所述光学检测芯片；
所述光学检测芯片，用于根据滤光后的光信号进行图像识别。
具体的，通过光学通路调制器的光采集通路的光穿过滤光片抵达光学检测芯片，从而进行图像识别。其中，光学检测芯片中的集成电路晶体管可位于衬底内。实际应用中，可以在衬底中进行集成电路晶体管制作可以采用目前的集成电路制作工艺实现。基于集成电路制作工艺，可以在衬底中制作光学检测芯片的相关晶体管和线路。
具体的，光学检测芯片可以包括用于进行图像识别的识别电路读出电路，该识别电路读出电路的电路原理可以参照现有的光学图像识别器件，例如，光学检测芯片可以包括：形成于衬底的识别电路读出电路(图中未示出)和与识别电路读出电路电连接的光感应区，其中，光感应区中的像素点位与光采集通路一一对应设置；光感应区，用于对光采集通路上传输的光信号经滤光片滤光后进行光感应处理，并将感应到的光信号传输至识别电路读出电路；识别电路读出电路，用于根据接收到的光信号进行图像识别。
其中，衬底可以为半导体元素，例如单晶硅、多晶硅或非晶结构的硅或硅锗(SiGe)，也可以为混合的半导体结构，例如碳化硅、锑化铟、碲化铅、砷化铟、磷化铟、砷化镓或锑化镓、合金半导体或其组合。可选的，衬底可以为单晶硅。
具体的，本实施例的制备方法用于制备如前所述的图像识别传感器，其采用的具体制备流程和工艺可以基于图像识别传感器的结构设定。
本实施例提供的图像识别传感器制备方法，制备获得的图像识别传感器中光学通路调制器包括形成有光采集通路的基材以及覆盖于基材表面的非透光层，该非透光层覆盖所述基材上除所述光采集通路以外的表面上。本方案中的非透光层能够有效阻挡光信号进入光学通路调制器的基材，从而在各光采集通路之间形成有效的光阻隔，避免各光采集通路中的光信号产生干扰，保证成像的对比度，从而有效提高光学成像的质量。
本申请实施例六提供一种电子设备，该电子设备包括：电源以及如前述任一实施方式所述的图像识别传感器；
所述图像识别传感器与所述电源电连接。
实际应用中，所述电子设备可以为手机、平板电脑等电子设备，该电子设备可以支持触控功能。图像识别传感器安装在所述电子设备中，用于实现例如指纹识别等图像识别功能，电源用于为图像识别传感器供电。进一步的，图像识别传感器可以设置在电子设备的触控屏下方。举例来说，当用户将手指放置在电子设备的触控屏上某一区域时，即可通过图像识别传感器实现指纹识别。实际应用中，图像识别可以用于指纹匹配、解锁屏幕、用户身份验证等场景。
具体的，本实施例的电子设备中的所述图像识别传感器，其光学通路调制器包括形成有光采集通路的基材以及覆盖于基材表面的非透光层，该非透光层覆盖所述基材上除所述光采集通路以外的表面上。该非透光层能够有效阻挡光信号进入光学通路调制器的基材，从而在各光采集通路之间形成有效的光阻隔，避免各光采集通路中的光信号产生干扰。
本实施例提供的电子设备的图像识别传感器中，光学通路调制器包括形成有光采集通路的基材以及覆盖于基材表面的非透光层，该非透光层覆盖所述基材上除所述光采集通路以外的表面上。本方案中的非透光层能够有效阻挡光信号进入光学通路调制器的基材，从而在各光采集通路之间形成有效的光阻隔，避免各光采集通路中的光信号产生干扰，保证成像的对比度，从而有效提高光学成像的质量。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本发明的其它实施方案。本申请旨在涵盖本发明的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本发明的一般性原理并包括本公 开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本发明的真正范围和精神由权利要求指出。
应当理解的是，本发明并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本发明的范围仅由所附的权利要求来限制。

Claims (19)

  1. 一种光学通路调制器，其特征在于，包括：形成有光采集通路的基材和非透光层；
    所述非透光层覆盖于所述基材上除所述光采集通路以外的表面上。
  2. 根据权利要求1所述的光学通路调制器，其特征在于，所述非透光层包括对入射光具有强反射作用的第一非透光层。
  3. 根据权利要求2所述的光学通路调制器，其特征在于，所述第一非透光层包括金属层，所述金属层包括钛层。
  4. 根据权利要求1-3中任一项所述的光学通路调制器，其特征在于，所述非透光层包括对入射光具有高吸收作用的第二非透光层。
  5. 根据权利要求4所述的光学通路调制器，其特征在于，所述第二非透光层包括黑胶层，所述黑胶层对入射光的通过率低于10％。
  6. 根据权利要求1-5中任一项所述的光学通路调制器，其特征在于，
    所述非透光层还覆盖所述光采集通路的侧壁。
  7. 根据权利要求1-6中任一项所述的光学通路调制器，其特征在于，所述光学通路调制器包括：
    形成于所述基材上的至少一个通孔，所述通孔贯穿所述基材；
    每个通孔对应一个光采集通路。
  8. 一种光学通路调制器的制造方法，其特征在于，包括：
    在基材的主体形成光采集通路；
    在所述基材的表面形成非透光层，所述非透光层覆盖所述基材除所述光采集通路以外区域的表面。
  9. 根据权利要求8所述的方法，其特征在于，所述非透光层包括对入射光具有强反射的第一非透光层。
  10. 根据权利要求9所述的方法，其特征在于，所述第一非透光层包括金属层，所述金属层包括钛层。
  11. 根据权利要求10所述的方法，其特征在于，所述形成位于所述基材上的非透光层，包括：
    采用物理气相沉积工艺，在所述基材的一面表面上形成所述金属层；
    对所述基材的另一面进行减薄，直至露出所述光采集通路。
  12. 根据权利要求8-11中任一项所述的方法，其特征在于，所述非透光层包括对入射光具有高吸收的第二非透光层。
  13. 根据权利要求12所述的方法，其特征在于，所述第二非透光层包括黑胶层，所述黑胶层对入射光的通过率低于10％。
  14. 根据权利要求13所述的方法，其特征在于，所述形成位于所述基材上的非透光层，包括：
    对所述基材远离光采集通路的一面进行减薄处理，直至露出所述光采集通路；
    采用喷涂或者旋涂工艺，在所述基材另一面除所述光采集通路以外的表面上形成所述黑胶层。
  15. 根据权利要求8-14中任一项所述的方法，其特征在于，所述形成位于所述基材上的非透光层，包括：
    在所述基材的表面形成非透光层，所述非透光层覆盖所述基材上除所述光采集通路以外区域的表面以及所述光采集通路的侧壁。
  16. 根据权利要求8-15中任一项所述的方法，其特征在于，所述在基材上形成光采集通路，包括：
    对基材进行刻蚀，形成至少一个通孔；
    每个通孔对应一个光采集通路。
  17. 一种图像识别传感器，其特征在于，包括：如权利要求1-7中任一项所述的光学通路调制器、滤光片以及光学检测芯片；
    所述光学通路调制器位于所述滤光片上，用于通过光采集通路将光信号传输至所述滤光片；
    所述滤光片位于所述光学检测芯片上，用于对所述光信号进行滤光，并将滤光后的光信号传输至所述光学检测芯片；
    所述光学检测芯片，用于根据滤光后的光信号进行图像识别。
  18. 一种图像识别传感器的制造方法，其特征在于，包括：
    将如权利要求1-7中任一项所述的光学通路调制器、滤光片以及光学检测芯片进行贴合封装；其中，
    所述光学通路调制器位于所述滤光片上，用于通过光采集通路将光信号传输至所述滤光片；
    所述滤光片位于所述光学检测芯片上，用于对所述光信号进行滤光，并将滤光后的光信号传输至所述光学检测芯片；
    所述光学检测芯片，用于根据滤光后的光信号进行图像识别。
  19. 一种电子设备，其特征在于，包括：电源以及如权利要求17所述的图像识别传感器；
    所述图像识别传感器与所述电源电连接。
PCT/CN2017/117049 2017-12-18 2017-12-18 光学通路调制器及制造方法、图像识别传感器和电子设备 WO2019119245A1 (zh)

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