WO2019205961A1 - 指纹识别器件、其制作方法、以及显示面板 - Google Patents

指纹识别器件、其制作方法、以及显示面板 Download PDF

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Publication number
WO2019205961A1
WO2019205961A1 PCT/CN2019/082433 CN2019082433W WO2019205961A1 WO 2019205961 A1 WO2019205961 A1 WO 2019205961A1 CN 2019082433 W CN2019082433 W CN 2019082433W WO 2019205961 A1 WO2019205961 A1 WO 2019205961A1
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Prior art keywords
electrode
layer
semiconductor layer
photosensitive
type semiconductor
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PCT/CN2019/082433
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English (en)
French (fr)
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薛大鹏
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京东方科技集团股份有限公司
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Priority to US16/495,547 priority Critical patent/US11328530B2/en
Publication of WO2019205961A1 publication Critical patent/WO2019205961A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14678—Contact-type imagers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/1341—Sensing with light passing through the finger

Definitions

  • the present disclosure relates to the field of semiconductor technologies, and in particular, to a fingerprint identification device, a method of fabricating the same, and a display panel.
  • fingerprint recognition applied in electronic devices is generally based on optical technology, silicon technology (capacitive or radio frequency) or ultrasonic technology.
  • capacitive fingerprint recognition the electrodes at both ends of the capacitor often generate parasitic capacitances with internal components of the display panel in the electronic device, which sometimes cause crosstalk between the fingerprint detection signal and the display signal, thereby affecting the accuracy of fingerprint recognition.
  • optical fingerprint recognition based on optical technology, the detection and recognition of fingerprints is realized by optical sensors detecting light reflected from human fingers, and thus generally does not suffer from signal crosstalk.
  • existing optical fingerprint recognition sensors have problems of poor sensitivity and accuracy.
  • a fingerprint recognition device comprising: a first substrate; and at least one photosensitive detector disposed on the first substrate, each of the at least one photosensitive detector comprising a first electrode, a photosensitive layer over the first electrode, and a second electrode over the photosensitive layer.
  • a side of the photosensitive layer facing away from the first electrode has a curved shape.
  • the photosensitive layer includes: an N-type semiconductor layer; an intrinsic semiconductor layer over the N-type semiconductor layer; and a P-type semiconductor layer over the intrinsic semiconductor layer.
  • a side of the P-type semiconductor layer facing away from the first electrode is in a curved shape.
  • the curved shape is selected from at least one of the group consisting of a concave curved surface, a convex curved surface, and a wavy surface.
  • each of the at least one photosensitive detector further comprises a respective annular frame disposed over the photosensitive layer, and the annular frame has a reflective inner surface such that illumination into the interior Light on the surface is reflected to the photosensitive layer.
  • the annular frame is arranged such that an orthographic projection of the annular frame on the first substrate overlaps with an orthographic projection of a peripheral region of the photosensitive layer on the first substrate.
  • the annular frame is made of a material including at least one selected from the group consisting of Mo, Al, Nb, and Ti.
  • the annular frame surrounds at least a portion of the second electrode, and the second electrode is in contact with the photosensitive layer via the at least a portion surrounded by the annular frame.
  • the fingerprint recognition device further includes a second substrate opposite the first substrate and above the second electrode.
  • the fingerprint recognition device further includes at least one thin film transistor disposed on the first substrate.
  • Each of the at least one thin film transistor is electrically coupled to a first electrode of a respective one of the at least one photosensitive detectors to transmit an output signal from the respective one of the photosensitive detectors for fingerprint recognition.
  • a display panel comprising the fingerprint recognition device as described above.
  • a method of fabricating a fingerprint recognition device includes: forming a first electrode over a first substrate; forming a photosensitive layer on the first electrode; A side facing away from the first electrode is patterned into a curved shape; and a second electrode is formed over the patterned photosensitive layer.
  • the photosensitive layer includes an N-type semiconductor layer, an intrinsic semiconductor layer over the N-type semiconductor layer, and a P-type semiconductor layer over the intrinsic semiconductor layer.
  • the patterning includes: forming a photoresist layer on the P-type semiconductor layer; patterning a side of the photoresist layer facing away from the P-type semiconductor layer into the curved surface; performing a dry method Etching to remove the photoresist layer and etching a side of the P-type semiconductor layer facing away from the first electrode into the curved shape.
  • the dry etch includes multiple cycles of etching and ashing.
  • the dry etch is performed such that the P-type semiconductor layer has a minimum thickness greater than a threshold.
  • FIG. 1 is a schematic cross-sectional view of a fingerprint recognition device in accordance with an embodiment of the present disclosure
  • FIG. 2A is a schematic cross-sectional view showing an example structure of a photosensitive layer in the fingerprint recognition device of FIG. 1;
  • FIG. 2B is a schematic cross-sectional view of a variation of the fingerprint recognition device of FIG. 2A;
  • FIG. 2C is a schematic cross-sectional view of another variation of the fingerprint recognition device of FIG. 2A;
  • FIG. 3 is a schematic cross-sectional view of a fingerprint recognition device provided with a ring frame in accordance with an embodiment of the present disclosure
  • FIG. 4 is a schematic cross-sectional view of a display panel in accordance with an embodiment of the present disclosure.
  • FIG. 5 is a flow chart of a method of making a fingerprint recognition device in accordance with an embodiment of the present disclosure
  • FIG. 6 is a schematic cross-sectional view showing a structure obtained by forming a first electrode according to the method of FIG. 5;
  • Figure 7 is a schematic cross-sectional view showing a structure obtained by forming a photosensitive layer on the basis of the structure of Figure 6;
  • Figure 8 is a schematic cross-sectional view showing a structure obtained by forming a photoresist layer on the basis of the structure of Figure 7;
  • Figure 9 is a schematic cross-sectional view showing a structure obtained by forming a curved surface of a photosensitive layer on the basis of the structure of Figure 8;
  • Figure 10 is a schematic cross-sectional view showing the structure obtained by forming an annular frame on the basis of the structure of Figure 9;
  • Figure 11 is a schematic cross-sectional view showing a structure obtained by depositing an insulating layer on the basis of the structure of Figure 10;
  • Fig. 12 is a schematic cross-sectional view showing a structure obtained by forming a second electrode on the basis of the structure of Fig. 10.
  • first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/ Some should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer Thus, a first element, component, region, layer or section may be referred to as a second element, component, region, layer or section without departing from the teachings of the present disclosure.
  • under and under can encompass both the ⁇ RTIgt; Terms such as “before” or “before” and “after” or “following” may be used, for example, to indicate the order in which light passes through the elements.
  • the device can be oriented in other ways (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein interpreted accordingly.
  • a layer is referred to as “between two layers,” it may be a single layer between the two layers, or one or more intermediate layers may be present.
  • FIG. 1 is a schematic cross-sectional view of a fingerprint recognition device in accordance with an embodiment of the present disclosure.
  • the fingerprint recognition device includes a first substrate 1 and a photosensitive detector disposed above the first substrate 1.
  • the first substrate 1 may be made of any suitable material such as glass or resin.
  • the photosensitive detector comprises a first electrode 2, a photosensitive layer 3 above the first electrode 2, and a second electrode 4 above the photosensitive layer 3.
  • the side of the photosensitive layer 3 facing away from the first electrode 2 is curved, as shown in FIG.
  • the second electrode 4 may be made of a transparent conductive material such as a metal oxide such as ITO, IZO or IGZO.
  • the finger When performing fingerprint recognition, the finger is generally located above the fingerprint recognition device, and the side of the photosensitive layer facing away from the first electrode 2 (ie, facing the finger) receives external light reflected by the finger.
  • the photosensitive detector produces an output signal for fingerprint recognition.
  • the fingerprint recognition device is illustrated in FIG. 1 as including a single photosensitive detector, this is merely exemplary and illustrative. In other embodiments, the fingerprint recognition device can include any suitable number of photosensitive detectors.
  • the fingerprint recognition device can be applied to any suitable scene, such as an access control system, an attendance system, a notebook computer, a mobile phone, a car, a bank payment, and the like.
  • the photosensitive layer 3 includes an N-type semiconductor layer 31, an intrinsic semiconductor layer 32 over the N-type semiconductor layer 31, and a P-type semiconductor layer 33 over the intrinsic semiconductor layer 32.
  • the photosensitive layer 3 forms a PIN photodiode.
  • the side of the P-type semiconductor layer 33 of the photosensitive layer 3 facing away from the first electrode 2 has a curved shape.
  • the photosensitive layer 3 may have a layered structure different from that shown, as long as the side of the photosensitive layer 3 facing the second electrode 4 is provided in a curved shape.
  • the curved shape of the photosensitive layer 3 is a convex curved surface.
  • the curved shape of the photosensitive layer 3 is a wave surface. Other curved shapes are also possible, and the disclosure is not limited thereto.
  • FIG. 3 is a schematic cross-sectional view of a fingerprint recognition device provided with an annular frame in accordance with an embodiment of the present disclosure.
  • the annular frame 5 is disposed above the photosensitive layer 3.
  • the annular frame 5 has a reflective inner surface such that light irradiated onto the inner surface is reflected to the photosensitive layer 3 (specifically, the P-type semiconductor layer 33). As shown in FIG. 3, the light indicated by the arrow is otherwise not received by the photosensitive layer 3. With the annular frame 5, the light is reflected to the upper surface of the photosensitive layer 3. Thereby, the sensitivity of the fingerprint recognition device is improved.
  • the annular frame 5 surrounds at least a portion of the second electrode 4, and the second electrode 4 is in contact with the photosensitive layer 3 (specifically, the P-type semiconductor layer 33) via the at least a portion surrounded by the annular frame 5. Accordingly, the orthographic projection of the annular frame 5 on the first substrate 1 overlaps with the orthographic projection of the peripheral region of the photosensitive layer 3 on the first substrate 1. It will be understood that the term loop-shaped does not mean that the frame 5 necessarily has a circular shape when viewed from above, but may have any suitable closed shape.
  • the annular frame 5 may be made of one or more of Mo, Al, Nb, and Ti, that is, it may be made of a single metal or an alloy of a plurality of metals. Of course, in other embodiments, it can also be made of other materials that are opaque and have a reflective function. In the specific fabrication, a reflective metal layer may be formed first, and then a central portion of the metal layer is removed by an etching process to form an annular frame 5.
  • the fingerprint recognition device comprises a first insulating layer 6 surrounding the first electrode 2, the photosensitive layer 3 and the annular frame 5.
  • the second electrode 4 fills the space surrounded by the annular frame 5 and is in contact with the photosensitive layer 3.
  • the fingerprint recognition device further includes a second substrate 10 opposite to the first substrate 1 and located above the second electrode 4.
  • FIG. 4 is a schematic cross-sectional view of a display panel in accordance with an embodiment of the present disclosure. In order not to obscure the subject matter of the present disclosure, elements in the display panel that are not related to the concept of the present disclosure are not shown in FIG.
  • the second electrode 4 of the photosensitive detector may be of the same material as the pixel electrode (not shown) in the display panel. Therefore, the second electrode of the photosensitive detector can be formed while forming the pixel electrode.
  • a thin film transistor 9 is disposed over the first substrate 1 for transmitting an output signal from the photosensitive detector for fingerprint recognition.
  • the thin film transistor 9 includes a gate electrode 91, an active layer 92 insulated from the gate electrode 91 via the second insulating layer 7, and a source electrode 93 and a drain electrode 94 that are in contact with the active layer 92.
  • the drain electrode 64 of the thin film transistor 9 is connected to the first electrode 2 of the photodetector. Accordingly, the drain electrode 94 of the thin film transistor 9 can be multiplexed as the first electrode 2 of the photosensitive detector.
  • the first electrode 2 of the photosensitive detector can be formed while forming the drain electrode 94 of the thin film transistor 9.
  • a third insulating layer 8 over the active electrode 93 and the drain electrode 94 is also provided.
  • the thin film transistor 9 is shown in FIG. 4 as a bottom gate type, this is merely exemplary and illustrative. In other embodiments, the thin film transistor 9 may be of a top gate type.
  • the thin film transistor 9 is typically made symmetrical such that its source electrode 94 and drain electrode 94 can be used interchangeably.
  • the fingerprint recognition device can be integrated with the display panel.
  • the respective film layers of the thin film transistors in the fingerprint recognition device can be formed while forming the respective film layers of the thin film transistors in the pixels.
  • the photosensitive detector can be provided with a non-display area of the display panel, or alternatively in a display area of the display panel.
  • FIG. 5 is a flow chart of a method of making a fingerprint recognition device in accordance with an embodiment of the present disclosure. For the clarity of the description, the method is also described below in connection with Figures 6 to 12.
  • Step S101 sequentially forming a first electrode and a photosensitive layer on the first substrate. This can include multiple sub-steps.
  • Step 1 On the first substrate 1, a thin film transistor 9 is fabricated. This includes forming the gate electrode 91 of the thin film transistor 9, the active layer 92, and the drain source layer (including the source electrode 93 and the drain electrode 94), wherein the second insulating layer 7 isolates the gate electrode 91 from the active layer 92. This step does not require a special process.
  • the source 93 and the drain 94 are formed in synchronization with the first electrode 2 of the photosensitive detector, and the drain 94 and the first electrode 2 are of a unitary structure as shown in FIG.
  • Step 2 a third insulating layer 8 is deposited over the source and drain layers of the thin film transistor 9, and a via for the connection of the photosensitive layer 3 and the first electrode 2 is opened in the third insulating layer 8.
  • Step 3 The N-type semiconductor layer 31, the intrinsic semiconductor layer 32, and the P-type semiconductor layer 33 stacked on each other are sequentially formed in the via holes of the third insulating layer 8, and the photosensitive layer 3 is obtained, as shown in FIG.
  • step S102 the one surface of the photosensitive layer 3 facing away from the first electrode 2 is patterned into a curved shape. This can include multiple sub-steps.
  • Step 4 forming a first photoresist layer 11 over the P-type semiconductor layer 33. Then, a side of the first photoresist layer 11 facing away from the P-type semiconductor is patterned into a curved shape by a masking, development, and etching process using a mask. In the case of a concave curved surface, the film thickness of the first photoresist layer 11 is thin at the center and thickened toward the edges in order, as shown in FIG. In the case of a convex curved surface, the film thickness of the first photoresist layer 11 is center-thick and thinner toward the edge.
  • Step 5 Dry etching is performed to remove the photoresist layer 11, and the upper surface of the P-type semiconductor layer 33 is formed into a desired curved surface, such as a concave curved surface, as shown in FIG. Dry etching can include etching and ashing for multiple cycles. You can adjust the curvature of the surface by adjusting the number of loops.
  • the etching of the P-type semiconductor layer 33 needs to ensure that the minimum thickness of the P-type semiconductor layer 33 is greater than a threshold value so as not to affect the normal operation of the PIN photodiode. It should be noted that the negative influence of the thickness unevenness of the P-type semiconductor layer 33 is negligible because the photoelectric conversion performance of the PIN photodiode is mainly determined by the I layer (i.e., the intrinsic semiconductor layer 32).
  • Step S103 forming a second electrode 4 over the photosensitive layer 3. This can include multiple sub-steps.
  • Step 6 A metal layer is formed over the P-type semiconductor layer 33, and a via hole is formed in the metal layer to form an annular frame 5, as shown in FIG. Specifically, a second photoresist layer may be formed over the metal layer, and then a pattern of the annular frame 5 is formed by exposure, development, etching using a mask.
  • the metal layer may include an alloy such as MO, AL, Nb or Ti, or any combination of the above metals.
  • the etching may be dry etching. Due to the etch anisotropy of the dry etching, the walls of the annular frame 5 produced can be as perpendicular as possible.
  • Step 7 The insulating layer 6 is deposited on the structure shown in Fig. 10 to obtain a structure as shown in Fig. 11. Then, a via hole (not shown) for connecting the second electrode 4 and the P-type semiconductor layer 33 is opened in the insulating layer 6.
  • Step 8 Fill the electrode material in the via hole in the insulating layer 6 to form the second electrode 4, as shown in FIG. Specifically, the second electrode 4 and the pixel electrode (not shown) can be synchronously fabricated using a mask. Thereby, the entire fingerprint recognition sensor is completed. Also shown in FIG. 12 is a second substrate 10 above the second electrode 4.
  • the light receiving area of the fingerprint recognition device can be increased, thereby improving the sensitivity and accuracy of the fingerprint recognition device.

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Abstract

一种指纹识别器件，包括：第一基板（1）；以及至少一个光敏检测器，设置在所述第一基板（1）之上，所述至少一个光敏检测器中的每一个包括第一电极（2）、位于所述第一电极（2）之上的光敏层（3）、以及位于所述光敏层（3）之上的第二电极（4），所述光敏层（3）背离所述第一电极（2）的一面呈曲面状。

Description

指纹识别器件、其制作方法、以及显示面板
相关申请的交叉引用
本申请要求2018年4月27日提交的中国专利申请No.201810390656.7的优先权，其全部公开内容通过引用合并于此。
技术领域
本公开涉及半导体技术领域，尤其涉及一种指纹识别器件、一种制作该指纹识别器件的方法、以及一种显示面板。
背景技术
目前，电子设备中应用的指纹识别一般基于光学技术、硅技术(电容式或射频式)或超声波技术等。对于电容式指纹识别而言，电容器两端的电极往往与电子设备中的显示面板内部部件产生寄生电容，该寄生电容有时导致指纹检测信号和显示信号之间的串扰，从而影响指纹识别的准确性。在基于光学技术的指纹识别中，通过光学传感器探测从人体手指反射的光线来实现指纹的检测和识别，因此通常不会遭受信号串扰。但现有的光学式指纹识别传感器存在灵敏度和精度欠佳的问题。
发明内容
根据本公开的一方面，提供了一种指纹识别器件，包括：第一基板；以及至少一个光敏检测器，设置在所述第一基板之上，所述至少一个光敏检测器中的每一个包括第一电极、位于所述第一电极之上的光敏层、以及位于所述光敏层之上的第二电极。所述光敏层的背离所述第一电极的一面呈曲面状。
在一些实施例中，所述光敏层包括：N型半导体层；本征半导体层，位于所述N型半导体层之上；以及P型半导体层，位于所述本征半导体层之上。所述P型半导体层的背离所述第一电极的一面呈所述曲面状。
在一些实施例中，所述曲面状选自凹形弧面、凸形弧面和波浪面所组成的组中的至少一个。
在一些实施例中，所述至少一个光敏检测器中的每一个还包括设置在所述光敏层之上的相应的环形框架，并且所述环形框架具有反射性的内表面使得照射到所述内表面上的光被反射到所述光敏层。
在一些实施例中，所述环形框架被布置使得该环形框架在所述第一基板上的正投影与所述光敏层的周边区域在所述第一基板上的正投影重叠。
在一些实施例中，所述环形框架由包括选自Mo、Al、Nb和Ti所组成的组中的至少一个的材料制成。
在一些实施例中，所述环形框架包围所述第二电极的至少一部分，并且所述第二电极经由被所述环形框架包围的所述至少一部分与所述光敏层接触。
在一些实施例中，所述指纹识别器件还包括第二基板，其与所述第一基板相对且位于所述第二电极之上。
在一些实施例中，所述指纹识别器件还包括至少一个薄膜晶体管，其设置在所述第一基板上。所述至少一个薄膜晶体管中的每一个与所述至少一个光敏检测器中的相应一个光敏检测器的第一电极电连接，以传送来自所述相应一个光敏检测器的输出信号以供指纹识别。
根据本公开的另一方面，提供了一种显示面板，包括如上所述的指纹识别器件。
根据本公开的又另一方面，提供了一种制作指纹识别器件的方法，包括：在第一基板之上形成第一电极；在所述第一电极上形成光敏层；将所述光敏层的背离所述第一电极的一面图案化为呈曲面状；并且在被图案化的所述光敏层之上形成第二电极。
在一些实施例中，所述光敏层包括N型半导体层、位于所述N型半导体层之上的本征半导体层、以及位于所述本征半导体层之上的P型半导体层。所述图案化包括：在所述P型半导体层之上形成光刻胶层；将所述光刻胶层的背离所述P型半导体层的一面图案化为呈所述曲面状；执行干法刻蚀以去除所述光刻胶层并将所述P型半导体层的背离所述第一电极的一面刻蚀成呈所述曲面状。
在一些实施例中，所述干法刻蚀包括多个循环的刻蚀和灰化。
在一些实施例中，所述干法刻蚀被执行以使得所述P型半导体层具有大于阈值的最小厚度。
附图说明
图1为根据本公开实施例的一种指纹识别器件的示意性截面图；
图2A为示出图1的指纹识别器件中的光敏层的示例结构的示意性截面图；
图2B为图2A的指纹识别器件的变型的示意性截面图；
图2C为图2A的指纹识别器件的另一变型的示意性截面图；
图3为根据本公开实施例的设置有环形框架的指纹识别器件的示意性截面图；
图4为根据本公开实施例的一种显示面板的示意性截面图；
图5为根据本公开实施例的一种制作指纹识别器件的方法的流程图；
图6为示出根据图5的方法形成第一电极所得结构的示意性截面图；
图7为在图6的结构的基础上形成光敏层所得结构的示意性截面图；
图8为在图7的结构的基础上形成光刻胶层所得结构的示意性截面图；
图9为在图8的结构的基础上形成光敏层的曲面所得结构的示意性截面图；
图10为在图9的结构的基础上形成环形框架所得结构的示意性截面图；
图11为在图10的结构的基础上沉积绝缘层所得结构的示意性截面图；并且
图12为在图10的结构的基础上形成第二电极所得结构的示意性截面图。
具体实施方式
将理解的是，尽管术语第一、第二、第三等等在本文中可以用来描述各种元件、部件、区、层和/或部分，但是这些元件、部件、区、层和/或部分不应当由这些术语限制。这些术语仅用来将一个元件、部件、区、层或部分与另一个区、层或部分相区分。因此，下面讨论的 第一元件、部件、区、层或部分可以被称为第二元件、部件、区、层或部分而不偏离本公开的教导。
诸如“在...下面”、“在...之下”、“较下”、“在...下方”、“在...之上”、“较上”等等之类的空间相对术语在本文中可以为了便于描述而用来描述如图中所图示的一个元件或特征与另一个(些)元件或特征的关系。将理解的是，这些空间相对术语意图涵盖除了图中描绘的取向之外在使用或操作中的器件的不同取向。例如，如果翻转图中的器件，那么被描述为“在其他元件或特征之下”或“在其他元件或特征下面”或“在其他元件或特征下方”的元件将取向为“在其他元件或特征之上”。因此，示例性术语“在...之下”和“在...下方”可以涵盖在...之上和在...之下的取向两者。诸如“在...之前”或“在...前”和“在...之后”或“接着是”之类的术语可以类似地例如用来指示光穿过元件所依的次序。器件可以取向为其他方式(旋转90度或以其他取向)并且相应地解释本文中使用的空间相对描述符。另外，还将理解的是，当层被称为“在两个层之间”时，其可以是在该两个层之间的唯一的层，或者也可以存在一个或多个中间层。
本文中使用的术语仅出于描述特定实施例的目的并且不意图限制本公开。如本文中使用的，单数形式“一个”、“一”和“该”意图也包括复数形式，除非上下文清楚地另有指示。将进一步理解的是，术语“包括”和/或“包含”当在本说明书中使用时指定所述及特征、整体、步骤、操作、元件和/或部件的存在，但不排除一个或多个其他特征、整体、步骤、操作、元件、部件和/或其群组的存在或添加一个或多个其他特征、整体、步骤、操作、元件、部件和/或其群组。如本文中使用的，术语“和/或”包括相关联的列出项目中的一个或多个的任意和全部组合。
将理解的是，当元件或层被称为“在另一个元件或层上”、“连接到另一个元件或层”、“耦合到另一个元件或层”或“邻近另一个元件或层”时，其可以直接在另一个元件或层上、直接连接到另一个元件或层、直接耦合到另一个元件或层或者直接邻近另一个元件或层，或者可以存在中间元件或层。相反，当元件被称为“直接在另一个元件或层上”、“直接连接到另一个元件或层”、“直接耦合到另一个元件或层”、“直接邻近另一个元件或层”时，没有中间元件或层存 在。然而，在任何情况下“在...上”或“直接在...上”都不应当被解释为要求一个层完全覆盖下面的层。
本文中参考本公开的理想化实施例的示意性图示(以及中间结构)描述本公开的实施例。正因为如此，应预期例如作为制造技术和/或公差的结果而对于图示形状的变化。因此，本公开的实施例不应当被解释为限于本文中图示的区的特定形状，而应包括例如由于制造导致的形状偏差。因此，图中图示的区本质上是示意性的，并且其形状不意图图示器件的区的实际形状并且不意图限制本公开的范围。
除非另有定义，本文中使用的所有术语(包括技术术语和科学术语)具有与本公开所属领域的普通技术人员所通常理解的相同含义。将进一步理解的是，诸如那些在通常使用的字典中定义的之类的术语应当被解释为具有与其在相关领域和/或本说明书上下文中的含义相一致的含义，并且将不在理想化或过于正式的意义上进行解释，除非本文中明确地如此定义。
为了保持本公开实施例的以下说明清楚且简明，可能已经省略了关于已知部件的详细说明。
图1为根据本公开实施例的一种指纹识别器件的示意性截面图。参见图1，指纹识别器件包括第一基板1和设置在第一基板1之上的光敏检测器。
第一基板1可以由任何适当的材料制成，例如玻璃或树脂。
光敏检测器包括第一电极2、位于第一电极2之上的光敏层3、以及位于光敏层3之上的第二电极4。光敏层3的背离第一电极2的一面呈曲面状，如图1所示。第二电极4可以由透明的导电材料制成，例如诸如ITO、IZO或IGZO之类的金属氧化物。
在进行指纹识别时，手指一般位于指纹识别器件的上方，并且光敏层的背离第一电极2(即，面向手指)的一面接收手指反射的外界光线。由此，光敏检测器产生输出信号以供指纹识别。通过将光敏层3的背离第一电极2的一面设置为曲面状，可以增大指纹识别器件的受光面积，进而提升指纹识别器件的灵敏度和精度。
将理解的是，虽然指纹识别器件在图1中示出为包括单个光敏检测器，但是这仅仅是示例性和说明性的。在其他实施例中，指纹识别器件可以包括任何适当数目的光敏检测器。指纹识别器件可以应用于 任何适当的场景中，例如门禁系统、考勤系统、笔记本电脑、手机、汽车、银行支付等。
图2A为示出图1的指纹识别器件中的光敏层3的示例结构的示意性截面图。参见图2A，光敏层3包括N型半导体层31、位于N型半导体层31之上的本征半导体层32、以及位于本征半导体层32之上的P型半导体层33。这样，光敏层3形成PIN光电二极管。光敏层3的P型半导体层33的背离第一电极2的一面呈曲面状。
在其他实施例，光敏层3可以具有不同于所示出的那样的分层结构，只要是光敏层3的面向第二电极4的一面设置为曲面状。
图2B和2C示出了图2A的指纹识别器件的变型。在图2B的示例中，光敏层3的曲面形状为为凸型弧面。在图2C的示例中，光敏层3的曲面形状为波浪面。其它曲面形状也是可能的，本公开不以此为限。
图3为根据本公开实施例的设置有环形框架的指纹识别器件的示意性截面图。在该实施例中，环形框架5设置在光敏层3之上。
环形框架5具有反射性的内表面使得照射到所述内表面上的光被反射到光敏层3(具体地，P型半导体层33)。如图3所示，箭头所示的光线否则未被光敏层3接收到。利用环形框架5，该光线经过被反射到光敏层3的上表面。由此，提高了指纹识别器件的灵敏度。
在该示例中，环形框架5包围第二电极4的至少一部分，并且第二电极4经由被环形框架5包围的所述至少一部分与光敏层3(具体地，P型半导体层33)接触。相应地，环形框架5在第一基板1上的正投影与光敏层3的周边区域在第一基板1上的正投影重叠。将理解的是，术语环形(loop-shaped)并不意味着框架5当从上方看时必然具有圆形形状，而是可以具有任何适当的闭合形状。
环形框架5可以由Mo、Al、Nb和Ti中的一个或多个制成，即，它可以由单种金属或多种金属的合金制成。当然，在其他实施例中，它还可以由其它不透光且具有反射功能的材质制成。在具体制作时，可以先形成反射性的金属层，再通过刻蚀工艺去除金属层的中心部分，形成环形框架5。
在图3的示例中，指纹识别器件包括包围第一电极2、光敏层3和环形框架5的第一绝缘层6。第二电极4填充环形框架5所包围的空间并与光敏层3接触。另外，指纹识别器件还包括与第一基板1相对且 位于第二电极4之上的第二基板10。
图4为根据本公开实施例的一种显示面板的示意性截面图。为了不模糊本公开的主题，显示面板中的与本公开的构思无关的元件未被示出在图4中。
光敏检测器的第二电极4可以与显示面板中的像素电极(未示出)同层同材质。因此，可以在形成像素电极的同时形成光敏检测器的第二电极。
薄膜晶体管9设置在第一基板1之上，用于传送来自光敏检测器的输出信号以供指纹识别。薄膜晶体管9包括栅电极91、经由第二绝缘层7与栅电极91绝缘的有源层92、以及与有源层92接触的源电极93和漏电极94。薄膜晶体管9的漏电极64与光敏检测器的第一电极2连接。相应地，薄膜晶体管9的漏电极94可以复用做光敏检测器的第一电极2。在制作指纹识别器件时，可以在形成薄膜晶体管9的漏电极94的同时形成光敏检测器的第一电极2。在该示例中，还设置有源电极93和漏电极94之上的第三绝缘层8。
虽然薄膜晶体管9在图4中被示出为底栅型，但是这只是示例性和说明性的。在其他实施例中，薄膜晶体管9可以是顶栅型。薄膜晶体管9通常被制作为对称的使得它的源电极94和漏电极94可以被可互换地使用。
在实施例中，指纹识别器件可以与显示面板相集成。例如，可以在形成像素中的薄膜晶体管的各个膜层的同时，形成指纹识别器件中的薄膜晶体管的各个膜层。光敏检测器可以设置显示面板的非显示区，或者替换地在显示面板的显示区。
图5为根据本公开实施例的一种制作指纹识别器件的方法的流程图。为了描述的清楚性，在下文中还结合图6至12描述该方法。
步骤S101、依次在第一基板之上形成第一电极和光敏层。这可以包括多个子步骤。
步骤①、在第一基板1上，制作薄膜晶体管9。这包括形成薄膜晶体管9的栅电极91、有源层92、和漏源极层(包括源电极93和漏电极94)，其中第二绝缘层7将栅电极91与有源层92相隔离。此步骤无需特殊工艺。源极93和漏极94与光敏检测器的第一电极2同步形成，并且漏极94与第一电极2为整体结构，如图6所示。
步骤②、在薄膜晶体管9的源漏极层之上沉积第三绝缘层8，并在第三绝缘层8中开设用于光敏层3与第一电极2的连接的通孔。
步骤③、在第三绝缘层8的通孔中依次形成彼此堆叠的N型半导体层31、本征半导体层32、P型半导体层33，得到光敏层3，如图7所示。
步骤S102、将光敏层3的背向第一电极2的一面图案化为曲面状。这可以包括多个子步骤。
步骤④、在P型半导体层33之上形成第一光刻胶层11。然后，采用掩膜板，通过曝光、显影、刻蚀工艺，将第一光刻胶层11的背向P型半导体的一面图案化为曲面状。在凹形弧面的情况下，第一光刻胶层11的膜厚为中心薄，向边缘依次加厚，如图8所示。在凸形弧面的情况下，第一光刻胶层11的膜厚为中心厚，向边缘依次减薄
步骤⑤、采用干法刻蚀，去除掉光刻胶层11，并使P型半导体层33的上表面形成所需的曲面，例如凹形弧面，如图9所示。干法刻蚀可以包括进行多次循环的刻蚀和灰化(ashing)。可以通过调整循环的次数来调节曲面的弧度。
对P型半导体层33的刻蚀需要确保P型半导体层33的最小厚度大于阈值以免影响PIN光电二极管的正常工作。需要说明的是，P型半导体层33的厚度不均所带来的负面影响可以忽略，因为PIN光电二极管的光电转换性能主要由I层(即，本征半导体层32)决定。
步骤S103、在光敏层3之上形成第二电极4。这可以包括多个子步骤。
步骤⑥、在P型半导体层33之上形成金属层，并且在该金属层中开设通孔，形成环形框架5，如图10所示。具体地，可以在该金属层之上形成第二光刻胶层，并且然后使用掩模板通过曝光、显影、刻蚀来制作环形框架5的图案。金属层可以包括如MO、AL、Nb或Ti，或作为上述金属的任意组合的合金。本步骤中，刻蚀可以是干法刻蚀。归因于干法刻蚀的刻蚀异向性，制作出的环形框架5的壁可以尽可能地垂直。
步骤⑦、在图10所示的结构上沉积绝缘层6，得到如图11所示的结构。然后，在绝缘层6中开设用于连接第二电极4与P型半导体层33电的过孔(未示出)。
步骤⑧、在绝缘层6中的过孔内填充电极材料，形成第二电极4，如图12所示。具体地，可以利用掩模板来同步地制作第二电极4和像素电极(未示出)。由此，整个指纹识别传感器制作完成。图12中还示出了位于第二电极4之上的第二基板10。
在各实施例中，通过将光敏层3的背离第一电极2的一面设置为曲面状，可以增大指纹识别器件的受光面积，进而提升指纹识别器件的灵敏度和精度。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (14)

  1. 一种指纹识别器件，包括：
    第一基板；以及
    至少一个光敏检测器，设置在所述第一基板之上，所述至少一个光敏检测器中的每一个包括第一电极、位于所述第一电极之上的光敏层、以及位于所述光敏层之上的第二电极，
    其中所述光敏层的背离所述第一电极的一面呈曲面状。
  2. 如权利要求1所述的指纹识别器件，其中所述光敏层包括：
    N型半导体层；
    本征半导体层，位于所述N型半导体层之上；以及
    P型半导体层，位于所述本征半导体层之上，
    其中所述P型半导体层的背离所述第一电极的一面呈所述曲面状。
  3. 如权利要求2所述的指纹识别器件，其中所述曲面状选自凹形弧面、凸形弧面和波浪面所组成的组中的至少一个。
  4. 如权利要求1所述的指纹识别器件，其中所述至少一个光敏检测器中的每一个还包括设置在所述光敏层之上的相应的环形框架，并且其中所述环形框架具有反射性的内表面使得照射到所述内表面上的光被反射到所述光敏层。
  5. 如权利要求4所述的指纹识别器件，其中所述环形框架被布置使得该环形框架在所述第一基板上的正投影与所述光敏层的周边区域在所述第一基板上的正投影重叠。
  6. 如权利要求4所述的指纹识别器件，其中所述环形框架由包括选自Mo、Al、Nb和Ti所组成的组中的至少一个的材料制成。
  7. 如权利要求4所述的指纹识别器件，其中所述环形框架包围所述第二电极的至少一部分，并且其中所述第二电极经由被所述环形框架包围的所述至少一部分与所述光敏层接触。
  8. 如权利要求1所述的指纹识别器件，还包括第二基板，其与所述第一基板相对且位于所述第二电极之上。
  9. 如权利要求1所述的指纹识别器件，还包括至少一个薄膜晶体管，其设置在所述第一基板上，其中所述至少一个薄膜晶体管中的每一个与所述至少一个光敏检测器中的相应一个光敏检测器的第一电极 电连接，以传送来自所述相应一个光敏检测器的输出信号以供指纹识别。
  10. 一种显示面板，包括如权利要求1-9中任一项所述的指纹识别器件。
  11. 一种制作指纹识别器件的方法，包括：
    在第一基板之上形成第一电极；
    在所述第一电极上形成光敏层；
    将所述光敏层的背离所述第一电极的一面图案化为呈曲面状；并且
    在被图案化的所述光敏层之上形成第二电极。
  12. 如权利要求11所述的方法，其中所述光敏层包括N型半导体层、位于所述N型半导体层之上的本征半导体层、以及位于所述本征半导体层之上的P型半导体层，其中所述图案化包括：
    在所述P型半导体层之上形成光刻胶层；
    将所述光刻胶层的背离所述P型半导体层的一面图案化为呈所述曲面状；
    执行干法刻蚀以去除所述光刻胶层并将所述P型半导体层的背离所述第一电极的一面刻蚀成呈所述曲面状。
  13. 如权利要求12所述的方法，其中所述干法刻蚀包括多个循环的刻蚀和灰化。
  14. 如权利要求12所述的方法，其中所述干法刻蚀被执行以使得所述P型半导体层具有大于阈值的最小厚度。
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