WO2019205961A1 - 指纹识别器件、其制作方法、以及显示面板 - Google Patents
指纹识别器件、其制作方法、以及显示面板 Download PDFInfo
- Publication number
- WO2019205961A1 WO2019205961A1 PCT/CN2019/082433 CN2019082433W WO2019205961A1 WO 2019205961 A1 WO2019205961 A1 WO 2019205961A1 CN 2019082433 W CN2019082433 W CN 2019082433W WO 2019205961 A1 WO2019205961 A1 WO 2019205961A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- layer
- semiconductor layer
- photosensitive
- type semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims description 51
- 239000010409 thin film Substances 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 238000004380 ashing Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 135
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- -1 ITO Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14678—Contact-type imagers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/1341—Sensing with light passing through the finger
Definitions
- the present disclosure relates to the field of semiconductor technologies, and in particular, to a fingerprint identification device, a method of fabricating the same, and a display panel.
- fingerprint recognition applied in electronic devices is generally based on optical technology, silicon technology (capacitive or radio frequency) or ultrasonic technology.
- capacitive fingerprint recognition the electrodes at both ends of the capacitor often generate parasitic capacitances with internal components of the display panel in the electronic device, which sometimes cause crosstalk between the fingerprint detection signal and the display signal, thereby affecting the accuracy of fingerprint recognition.
- optical fingerprint recognition based on optical technology, the detection and recognition of fingerprints is realized by optical sensors detecting light reflected from human fingers, and thus generally does not suffer from signal crosstalk.
- existing optical fingerprint recognition sensors have problems of poor sensitivity and accuracy.
- a fingerprint recognition device comprising: a first substrate; and at least one photosensitive detector disposed on the first substrate, each of the at least one photosensitive detector comprising a first electrode, a photosensitive layer over the first electrode, and a second electrode over the photosensitive layer.
- a side of the photosensitive layer facing away from the first electrode has a curved shape.
- the photosensitive layer includes: an N-type semiconductor layer; an intrinsic semiconductor layer over the N-type semiconductor layer; and a P-type semiconductor layer over the intrinsic semiconductor layer.
- a side of the P-type semiconductor layer facing away from the first electrode is in a curved shape.
- the curved shape is selected from at least one of the group consisting of a concave curved surface, a convex curved surface, and a wavy surface.
- each of the at least one photosensitive detector further comprises a respective annular frame disposed over the photosensitive layer, and the annular frame has a reflective inner surface such that illumination into the interior Light on the surface is reflected to the photosensitive layer.
- the annular frame is arranged such that an orthographic projection of the annular frame on the first substrate overlaps with an orthographic projection of a peripheral region of the photosensitive layer on the first substrate.
- the annular frame is made of a material including at least one selected from the group consisting of Mo, Al, Nb, and Ti.
- the annular frame surrounds at least a portion of the second electrode, and the second electrode is in contact with the photosensitive layer via the at least a portion surrounded by the annular frame.
- the fingerprint recognition device further includes a second substrate opposite the first substrate and above the second electrode.
- the fingerprint recognition device further includes at least one thin film transistor disposed on the first substrate.
- Each of the at least one thin film transistor is electrically coupled to a first electrode of a respective one of the at least one photosensitive detectors to transmit an output signal from the respective one of the photosensitive detectors for fingerprint recognition.
- a display panel comprising the fingerprint recognition device as described above.
- a method of fabricating a fingerprint recognition device includes: forming a first electrode over a first substrate; forming a photosensitive layer on the first electrode; A side facing away from the first electrode is patterned into a curved shape; and a second electrode is formed over the patterned photosensitive layer.
- the photosensitive layer includes an N-type semiconductor layer, an intrinsic semiconductor layer over the N-type semiconductor layer, and a P-type semiconductor layer over the intrinsic semiconductor layer.
- the patterning includes: forming a photoresist layer on the P-type semiconductor layer; patterning a side of the photoresist layer facing away from the P-type semiconductor layer into the curved surface; performing a dry method Etching to remove the photoresist layer and etching a side of the P-type semiconductor layer facing away from the first electrode into the curved shape.
- the dry etch includes multiple cycles of etching and ashing.
- the dry etch is performed such that the P-type semiconductor layer has a minimum thickness greater than a threshold.
- FIG. 1 is a schematic cross-sectional view of a fingerprint recognition device in accordance with an embodiment of the present disclosure
- FIG. 2A is a schematic cross-sectional view showing an example structure of a photosensitive layer in the fingerprint recognition device of FIG. 1;
- FIG. 2B is a schematic cross-sectional view of a variation of the fingerprint recognition device of FIG. 2A;
- FIG. 2C is a schematic cross-sectional view of another variation of the fingerprint recognition device of FIG. 2A;
- FIG. 3 is a schematic cross-sectional view of a fingerprint recognition device provided with a ring frame in accordance with an embodiment of the present disclosure
- FIG. 4 is a schematic cross-sectional view of a display panel in accordance with an embodiment of the present disclosure.
- FIG. 5 is a flow chart of a method of making a fingerprint recognition device in accordance with an embodiment of the present disclosure
- FIG. 6 is a schematic cross-sectional view showing a structure obtained by forming a first electrode according to the method of FIG. 5;
- Figure 7 is a schematic cross-sectional view showing a structure obtained by forming a photosensitive layer on the basis of the structure of Figure 6;
- Figure 8 is a schematic cross-sectional view showing a structure obtained by forming a photoresist layer on the basis of the structure of Figure 7;
- Figure 9 is a schematic cross-sectional view showing a structure obtained by forming a curved surface of a photosensitive layer on the basis of the structure of Figure 8;
- Figure 10 is a schematic cross-sectional view showing the structure obtained by forming an annular frame on the basis of the structure of Figure 9;
- Figure 11 is a schematic cross-sectional view showing a structure obtained by depositing an insulating layer on the basis of the structure of Figure 10;
- Fig. 12 is a schematic cross-sectional view showing a structure obtained by forming a second electrode on the basis of the structure of Fig. 10.
- first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/ Some should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer Thus, a first element, component, region, layer or section may be referred to as a second element, component, region, layer or section without departing from the teachings of the present disclosure.
- under and under can encompass both the ⁇ RTIgt; Terms such as “before” or “before” and “after” or “following” may be used, for example, to indicate the order in which light passes through the elements.
- the device can be oriented in other ways (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein interpreted accordingly.
- a layer is referred to as “between two layers,” it may be a single layer between the two layers, or one or more intermediate layers may be present.
- FIG. 1 is a schematic cross-sectional view of a fingerprint recognition device in accordance with an embodiment of the present disclosure.
- the fingerprint recognition device includes a first substrate 1 and a photosensitive detector disposed above the first substrate 1.
- the first substrate 1 may be made of any suitable material such as glass or resin.
- the photosensitive detector comprises a first electrode 2, a photosensitive layer 3 above the first electrode 2, and a second electrode 4 above the photosensitive layer 3.
- the side of the photosensitive layer 3 facing away from the first electrode 2 is curved, as shown in FIG.
- the second electrode 4 may be made of a transparent conductive material such as a metal oxide such as ITO, IZO or IGZO.
- the finger When performing fingerprint recognition, the finger is generally located above the fingerprint recognition device, and the side of the photosensitive layer facing away from the first electrode 2 (ie, facing the finger) receives external light reflected by the finger.
- the photosensitive detector produces an output signal for fingerprint recognition.
- the fingerprint recognition device is illustrated in FIG. 1 as including a single photosensitive detector, this is merely exemplary and illustrative. In other embodiments, the fingerprint recognition device can include any suitable number of photosensitive detectors.
- the fingerprint recognition device can be applied to any suitable scene, such as an access control system, an attendance system, a notebook computer, a mobile phone, a car, a bank payment, and the like.
- the photosensitive layer 3 includes an N-type semiconductor layer 31, an intrinsic semiconductor layer 32 over the N-type semiconductor layer 31, and a P-type semiconductor layer 33 over the intrinsic semiconductor layer 32.
- the photosensitive layer 3 forms a PIN photodiode.
- the side of the P-type semiconductor layer 33 of the photosensitive layer 3 facing away from the first electrode 2 has a curved shape.
- the photosensitive layer 3 may have a layered structure different from that shown, as long as the side of the photosensitive layer 3 facing the second electrode 4 is provided in a curved shape.
- the curved shape of the photosensitive layer 3 is a convex curved surface.
- the curved shape of the photosensitive layer 3 is a wave surface. Other curved shapes are also possible, and the disclosure is not limited thereto.
- FIG. 3 is a schematic cross-sectional view of a fingerprint recognition device provided with an annular frame in accordance with an embodiment of the present disclosure.
- the annular frame 5 is disposed above the photosensitive layer 3.
- the annular frame 5 has a reflective inner surface such that light irradiated onto the inner surface is reflected to the photosensitive layer 3 (specifically, the P-type semiconductor layer 33). As shown in FIG. 3, the light indicated by the arrow is otherwise not received by the photosensitive layer 3. With the annular frame 5, the light is reflected to the upper surface of the photosensitive layer 3. Thereby, the sensitivity of the fingerprint recognition device is improved.
- the annular frame 5 surrounds at least a portion of the second electrode 4, and the second electrode 4 is in contact with the photosensitive layer 3 (specifically, the P-type semiconductor layer 33) via the at least a portion surrounded by the annular frame 5. Accordingly, the orthographic projection of the annular frame 5 on the first substrate 1 overlaps with the orthographic projection of the peripheral region of the photosensitive layer 3 on the first substrate 1. It will be understood that the term loop-shaped does not mean that the frame 5 necessarily has a circular shape when viewed from above, but may have any suitable closed shape.
- the annular frame 5 may be made of one or more of Mo, Al, Nb, and Ti, that is, it may be made of a single metal or an alloy of a plurality of metals. Of course, in other embodiments, it can also be made of other materials that are opaque and have a reflective function. In the specific fabrication, a reflective metal layer may be formed first, and then a central portion of the metal layer is removed by an etching process to form an annular frame 5.
- the fingerprint recognition device comprises a first insulating layer 6 surrounding the first electrode 2, the photosensitive layer 3 and the annular frame 5.
- the second electrode 4 fills the space surrounded by the annular frame 5 and is in contact with the photosensitive layer 3.
- the fingerprint recognition device further includes a second substrate 10 opposite to the first substrate 1 and located above the second electrode 4.
- FIG. 4 is a schematic cross-sectional view of a display panel in accordance with an embodiment of the present disclosure. In order not to obscure the subject matter of the present disclosure, elements in the display panel that are not related to the concept of the present disclosure are not shown in FIG.
- the second electrode 4 of the photosensitive detector may be of the same material as the pixel electrode (not shown) in the display panel. Therefore, the second electrode of the photosensitive detector can be formed while forming the pixel electrode.
- a thin film transistor 9 is disposed over the first substrate 1 for transmitting an output signal from the photosensitive detector for fingerprint recognition.
- the thin film transistor 9 includes a gate electrode 91, an active layer 92 insulated from the gate electrode 91 via the second insulating layer 7, and a source electrode 93 and a drain electrode 94 that are in contact with the active layer 92.
- the drain electrode 64 of the thin film transistor 9 is connected to the first electrode 2 of the photodetector. Accordingly, the drain electrode 94 of the thin film transistor 9 can be multiplexed as the first electrode 2 of the photosensitive detector.
- the first electrode 2 of the photosensitive detector can be formed while forming the drain electrode 94 of the thin film transistor 9.
- a third insulating layer 8 over the active electrode 93 and the drain electrode 94 is also provided.
- the thin film transistor 9 is shown in FIG. 4 as a bottom gate type, this is merely exemplary and illustrative. In other embodiments, the thin film transistor 9 may be of a top gate type.
- the thin film transistor 9 is typically made symmetrical such that its source electrode 94 and drain electrode 94 can be used interchangeably.
- the fingerprint recognition device can be integrated with the display panel.
- the respective film layers of the thin film transistors in the fingerprint recognition device can be formed while forming the respective film layers of the thin film transistors in the pixels.
- the photosensitive detector can be provided with a non-display area of the display panel, or alternatively in a display area of the display panel.
- FIG. 5 is a flow chart of a method of making a fingerprint recognition device in accordance with an embodiment of the present disclosure. For the clarity of the description, the method is also described below in connection with Figures 6 to 12.
- Step S101 sequentially forming a first electrode and a photosensitive layer on the first substrate. This can include multiple sub-steps.
- Step 1 On the first substrate 1, a thin film transistor 9 is fabricated. This includes forming the gate electrode 91 of the thin film transistor 9, the active layer 92, and the drain source layer (including the source electrode 93 and the drain electrode 94), wherein the second insulating layer 7 isolates the gate electrode 91 from the active layer 92. This step does not require a special process.
- the source 93 and the drain 94 are formed in synchronization with the first electrode 2 of the photosensitive detector, and the drain 94 and the first electrode 2 are of a unitary structure as shown in FIG.
- Step 2 a third insulating layer 8 is deposited over the source and drain layers of the thin film transistor 9, and a via for the connection of the photosensitive layer 3 and the first electrode 2 is opened in the third insulating layer 8.
- Step 3 The N-type semiconductor layer 31, the intrinsic semiconductor layer 32, and the P-type semiconductor layer 33 stacked on each other are sequentially formed in the via holes of the third insulating layer 8, and the photosensitive layer 3 is obtained, as shown in FIG.
- step S102 the one surface of the photosensitive layer 3 facing away from the first electrode 2 is patterned into a curved shape. This can include multiple sub-steps.
- Step 4 forming a first photoresist layer 11 over the P-type semiconductor layer 33. Then, a side of the first photoresist layer 11 facing away from the P-type semiconductor is patterned into a curved shape by a masking, development, and etching process using a mask. In the case of a concave curved surface, the film thickness of the first photoresist layer 11 is thin at the center and thickened toward the edges in order, as shown in FIG. In the case of a convex curved surface, the film thickness of the first photoresist layer 11 is center-thick and thinner toward the edge.
- Step 5 Dry etching is performed to remove the photoresist layer 11, and the upper surface of the P-type semiconductor layer 33 is formed into a desired curved surface, such as a concave curved surface, as shown in FIG. Dry etching can include etching and ashing for multiple cycles. You can adjust the curvature of the surface by adjusting the number of loops.
- the etching of the P-type semiconductor layer 33 needs to ensure that the minimum thickness of the P-type semiconductor layer 33 is greater than a threshold value so as not to affect the normal operation of the PIN photodiode. It should be noted that the negative influence of the thickness unevenness of the P-type semiconductor layer 33 is negligible because the photoelectric conversion performance of the PIN photodiode is mainly determined by the I layer (i.e., the intrinsic semiconductor layer 32).
- Step S103 forming a second electrode 4 over the photosensitive layer 3. This can include multiple sub-steps.
- Step 6 A metal layer is formed over the P-type semiconductor layer 33, and a via hole is formed in the metal layer to form an annular frame 5, as shown in FIG. Specifically, a second photoresist layer may be formed over the metal layer, and then a pattern of the annular frame 5 is formed by exposure, development, etching using a mask.
- the metal layer may include an alloy such as MO, AL, Nb or Ti, or any combination of the above metals.
- the etching may be dry etching. Due to the etch anisotropy of the dry etching, the walls of the annular frame 5 produced can be as perpendicular as possible.
- Step 7 The insulating layer 6 is deposited on the structure shown in Fig. 10 to obtain a structure as shown in Fig. 11. Then, a via hole (not shown) for connecting the second electrode 4 and the P-type semiconductor layer 33 is opened in the insulating layer 6.
- Step 8 Fill the electrode material in the via hole in the insulating layer 6 to form the second electrode 4, as shown in FIG. Specifically, the second electrode 4 and the pixel electrode (not shown) can be synchronously fabricated using a mask. Thereby, the entire fingerprint recognition sensor is completed. Also shown in FIG. 12 is a second substrate 10 above the second electrode 4.
- the light receiving area of the fingerprint recognition device can be increased, thereby improving the sensitivity and accuracy of the fingerprint recognition device.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Image Input (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (14)
- 一种指纹识别器件,包括:第一基板;以及至少一个光敏检测器,设置在所述第一基板之上,所述至少一个光敏检测器中的每一个包括第一电极、位于所述第一电极之上的光敏层、以及位于所述光敏层之上的第二电极,其中所述光敏层的背离所述第一电极的一面呈曲面状。
- 如权利要求1所述的指纹识别器件,其中所述光敏层包括:N型半导体层;本征半导体层,位于所述N型半导体层之上;以及P型半导体层,位于所述本征半导体层之上,其中所述P型半导体层的背离所述第一电极的一面呈所述曲面状。
- 如权利要求2所述的指纹识别器件,其中所述曲面状选自凹形弧面、凸形弧面和波浪面所组成的组中的至少一个。
- 如权利要求1所述的指纹识别器件,其中所述至少一个光敏检测器中的每一个还包括设置在所述光敏层之上的相应的环形框架,并且其中所述环形框架具有反射性的内表面使得照射到所述内表面上的光被反射到所述光敏层。
- 如权利要求4所述的指纹识别器件,其中所述环形框架被布置使得该环形框架在所述第一基板上的正投影与所述光敏层的周边区域在所述第一基板上的正投影重叠。
- 如权利要求4所述的指纹识别器件,其中所述环形框架由包括选自Mo、Al、Nb和Ti所组成的组中的至少一个的材料制成。
- 如权利要求4所述的指纹识别器件,其中所述环形框架包围所述第二电极的至少一部分,并且其中所述第二电极经由被所述环形框架包围的所述至少一部分与所述光敏层接触。
- 如权利要求1所述的指纹识别器件,还包括第二基板,其与所述第一基板相对且位于所述第二电极之上。
- 如权利要求1所述的指纹识别器件,还包括至少一个薄膜晶体管,其设置在所述第一基板上,其中所述至少一个薄膜晶体管中的每一个与所述至少一个光敏检测器中的相应一个光敏检测器的第一电极 电连接,以传送来自所述相应一个光敏检测器的输出信号以供指纹识别。
- 一种显示面板,包括如权利要求1-9中任一项所述的指纹识别器件。
- 一种制作指纹识别器件的方法,包括:在第一基板之上形成第一电极;在所述第一电极上形成光敏层;将所述光敏层的背离所述第一电极的一面图案化为呈曲面状;并且在被图案化的所述光敏层之上形成第二电极。
- 如权利要求11所述的方法,其中所述光敏层包括N型半导体层、位于所述N型半导体层之上的本征半导体层、以及位于所述本征半导体层之上的P型半导体层,其中所述图案化包括:在所述P型半导体层之上形成光刻胶层;将所述光刻胶层的背离所述P型半导体层的一面图案化为呈所述曲面状;执行干法刻蚀以去除所述光刻胶层并将所述P型半导体层的背离所述第一电极的一面刻蚀成呈所述曲面状。
- 如权利要求12所述的方法,其中所述干法刻蚀包括多个循环的刻蚀和灰化。
- 如权利要求12所述的方法,其中所述干法刻蚀被执行以使得所述P型半导体层具有大于阈值的最小厚度。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/495,547 US11328530B2 (en) | 2018-04-27 | 2019-04-12 | Fingerprint recognition device, manufacturing method thereof, and display panel |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810390656.7A CN108596113B (zh) | 2018-04-27 | 2018-04-27 | 一种指纹识别器件、显示面板及其制作方法 |
CN201810390656.7 | 2018-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019205961A1 true WO2019205961A1 (zh) | 2019-10-31 |
Family
ID=63610594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2019/082433 WO2019205961A1 (zh) | 2018-04-27 | 2019-04-12 | 指纹识别器件、其制作方法、以及显示面板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11328530B2 (zh) |
CN (1) | CN108596113B (zh) |
WO (1) | WO2019205961A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108596113B (zh) * | 2018-04-27 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种指纹识别器件、显示面板及其制作方法 |
CN113161432A (zh) * | 2020-01-23 | 2021-07-23 | 群创光电股份有限公司 | 电子装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201549509U (zh) * | 2009-06-26 | 2010-08-11 | 哈尔滨海格科技发展有限责任公司 | 内置反射杯聚焦式红外接收器 |
CN105140250A (zh) * | 2015-06-30 | 2015-12-09 | 京东方科技集团股份有限公司 | 光电转换阵列基板及其制作方法、光电转换装置 |
CN106611170A (zh) * | 2017-01-03 | 2017-05-03 | 京东方科技集团股份有限公司 | 指纹识别装置及电子设备 |
CN206975658U (zh) * | 2017-04-06 | 2018-02-06 | 深圳市汇顶科技股份有限公司 | 指纹识别装置及电子终端 |
CN108596113A (zh) * | 2018-04-27 | 2018-09-28 | 京东方科技集团股份有限公司 | 一种指纹识别器件、显示面板及其制作方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101667544B (zh) * | 2005-11-15 | 2012-09-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
DE102007042984A1 (de) * | 2007-09-10 | 2009-03-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zur optischen Navigation |
CN102427079B (zh) * | 2011-12-09 | 2014-01-08 | 中国科学院上海高等研究院 | Cmos图像传感器 |
JP2013254130A (ja) * | 2012-06-08 | 2013-12-19 | Dexerials Corp | 光学素子およびその製造方法、表示素子、ならびに投射型画像表示装置 |
CN105304656B (zh) * | 2014-06-23 | 2018-06-22 | 上海箩箕技术有限公司 | 光电传感器 |
CN107590423A (zh) * | 2016-07-08 | 2018-01-16 | 上海箩箕技术有限公司 | 光学指纹传感器及其形成方法 |
CN106356416B (zh) * | 2016-11-28 | 2018-02-06 | 中国电子科技集团公司第十三研究所 | 高速光电探测器芯片的制作方法 |
CN106711190A (zh) * | 2017-01-24 | 2017-05-24 | 深圳基本半导体有限公司 | 一种具有高性能的半导体器件及制造方法 |
CN107425038B (zh) * | 2017-06-09 | 2020-01-21 | 武汉天马微电子有限公司 | 一种有机发光显示面板及其制造方法、以及电子设备 |
-
2018
- 2018-04-27 CN CN201810390656.7A patent/CN108596113B/zh active Active
-
2019
- 2019-04-12 WO PCT/CN2019/082433 patent/WO2019205961A1/zh active Application Filing
- 2019-04-12 US US16/495,547 patent/US11328530B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201549509U (zh) * | 2009-06-26 | 2010-08-11 | 哈尔滨海格科技发展有限责任公司 | 内置反射杯聚焦式红外接收器 |
CN105140250A (zh) * | 2015-06-30 | 2015-12-09 | 京东方科技集团股份有限公司 | 光电转换阵列基板及其制作方法、光电转换装置 |
CN106611170A (zh) * | 2017-01-03 | 2017-05-03 | 京东方科技集团股份有限公司 | 指纹识别装置及电子设备 |
CN206975658U (zh) * | 2017-04-06 | 2018-02-06 | 深圳市汇顶科技股份有限公司 | 指纹识别装置及电子终端 |
CN108596113A (zh) * | 2018-04-27 | 2018-09-28 | 京东方科技集团股份有限公司 | 一种指纹识别器件、显示面板及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20210334499A1 (en) | 2021-10-28 |
US11328530B2 (en) | 2022-05-10 |
CN108596113B (zh) | 2021-01-22 |
CN108596113A (zh) | 2018-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2018126644A1 (zh) | 指纹识别装置及电子设备 | |
CN108596096B (zh) | 指纹识别装置、显示面板及其制作方法、显示装置 | |
TWI652837B (zh) | 感測裝置 | |
US10726237B2 (en) | Fingerprint identification sensor, method for manufacturing the same and fingerprint identification apparatus | |
CN108764147B (zh) | 一种显示面板及显示装置 | |
US20200356744A1 (en) | Sensor, manufacturing method thereof, panel and recognition device | |
CN109863509B (zh) | 光电传感器及其制备方法 | |
CN108875699B (zh) | 一种感光套孔结构及其制备方法、指纹识别装置 | |
WO2017173714A1 (zh) | 触控显示基板及其制作方法 | |
CN110458036B (zh) | 指纹识别模组及其制备方法、相关装置 | |
TWI753775B (zh) | 感測裝置 | |
WO2019205961A1 (zh) | 指纹识别器件、其制作方法、以及显示面板 | |
WO2018099068A1 (zh) | 阵列基板及其制作方法、显示面板 | |
CN112347880A (zh) | 显示基板、显示面板及显示装置 | |
CN109190563B (zh) | 显示面板及其制备方法、显示装置 | |
US11781905B2 (en) | Optical sensing device and electronic apparatus having the same | |
TW202213175A (zh) | 用於感測手指生物特徵的光學感測裝置及使用其的電子裝置 | |
KR20030078372A (ko) | 지문인식장치의 tft 지문입력기 제조방법 | |
WO2020062869A1 (zh) | 指纹感测装置及其制造方法 | |
US20240021765A1 (en) | Array substrate, manufacturing method thereof, and display panel | |
CN112666734B (zh) | 液晶显示面板及显示装置 | |
WO2019119245A1 (zh) | 光学通路调制器及制造方法、图像识别传感器和电子设备 | |
TWI790019B (zh) | 生物特徵辨識裝置 | |
CN113433741B (zh) | 阵列基板、阵列基板的制造方法以及显示装置 | |
JP2003037261A (ja) | 薄膜トランジスタの製造方法、フォトセンサ及び読取装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 19791593 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 19791593 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 19791593 Country of ref document: EP Kind code of ref document: A1 |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 14/05/2021) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 19791593 Country of ref document: EP Kind code of ref document: A1 |