WO2019107211A1 - Élément de cellule solaire - Google Patents

Élément de cellule solaire Download PDF

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Publication number
WO2019107211A1
WO2019107211A1 PCT/JP2018/042747 JP2018042747W WO2019107211A1 WO 2019107211 A1 WO2019107211 A1 WO 2019107211A1 JP 2018042747 W JP2018042747 W JP 2018042747W WO 2019107211 A1 WO2019107211 A1 WO 2019107211A1
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Prior art keywords
protective layer
layer
solar cell
electrode
cell element
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PCT/JP2018/042747
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English (en)
Japanese (ja)
Inventor
松島　徳彦
吉田　貴信
義生 川島
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京セラ株式会社
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Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to JP2019516264A priority Critical patent/JP6539010B1/ja
Priority to CN201880077215.XA priority patent/CN111492492A/zh
Publication of WO2019107211A1 publication Critical patent/WO2019107211A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present disclosure relates to a solar cell element.
  • the passivation layer is located on the back surface of the semiconductor substrate. Furthermore, the back side current collection electrode is located on the passivation layer or on the protective layer located on the passivation layer.
  • a solar cell element is disclosed.
  • One aspect of a solar cell element includes a semiconductor substrate, a passivation layer, a protective layer, and an electrode layer.
  • the passivation layer is located on the first surface of the semiconductor substrate.
  • the protective layer is located on the passivation layer.
  • the electrode layer is located on the protective layer and includes a glass component.
  • the protective layer has a plurality of convex portions located on the surface on the electrode layer side. Each of the plurality of convex portions has a concave portion on the electrode layer side.
  • the glass component is located in the internal space of the concave portion.
  • FIG. 1 is a plan view showing the appearance of the front side of an example of the solar cell element according to the first embodiment.
  • FIG. 2 is a top view which shows the external appearance of the back surface side of an example of the solar cell element which concerns on 1st Embodiment.
  • FIG. 3 is a view showing an example of a virtual cut surface portion of the solar cell element taken along the line III-III in FIG. 1 and
  • FIG. 4A is an enlarged view showing an example of a virtual cut surface portion of the portion P1 of FIG.
  • FIG.4 (b) is an enlarged view which shows an example of the virtual cut surface part of the part P11 of Fig.4 (a).
  • FIG. 5A is an enlarged view showing an example of a virtual cut surface portion of the portion P1 of FIG. 3.
  • FIG.5 (b) is an enlarged view which shows an example of the virtual cut surface part of the part P11 of Fig.5 (a).
  • Fig.6 (a) is a figure for demonstrating the conditions of the peel test about the solar cell element which concerns on one reference example.
  • FIG.6 (b) is a figure which shows the result of the peeling test about the solar cell element which concerns on one reference example.
  • FIG. 7 is an enlarged view showing an example of a virtual cut surface portion of the portion P12 of FIG. 5 (a).
  • FIGS. 8 (a) to 8 (f) each show an example of a virtual cut surface portion corresponding to the virtual cut surface portion of FIG. 3 in a state in the middle of manufacturing the solar cell element according to the first embodiment.
  • FIG. 9 is a view for explaining an example of the structure of the protective layer according to the first embodiment.
  • Fig.10 (a) is an enlarged view which shows an example of the virtual cutting plane part of the part corresponding to the part P11 of Fig.4 (a) among the solar cell elements which concern on 2nd Embodiment.
  • FIG.10 (b) is an enlarged view which shows an example of the virtual cutting plane part of the part corresponding to the part P11 of Fig.5 (a) among the solar cell elements which concern on 2nd Embodiment.
  • FIG. 11 is a view for explaining an example of the structure of the protective layer according to the second embodiment.
  • FIG. 12 is a plan view showing the appearance of the back surface side of an example of the solar cell element according to the third embodiment.
  • FIG. 13 is a plan view showing an appearance of a front side of an example of a solar cell module according to a third embodiment.
  • FIG. 14 is a view showing an example of a virtual cross section of the solar cell element taken along line XIV-XIV in FIG.
  • FIG. 15 is a view showing an example of a virtual cut surface part corresponding to the virtual cut surface part of FIG. 14 in a state where the solar cell module according to the third embodiment is being manufactured.
  • FIG. 16A is an enlarged view showing an example of a virtual cut surface portion of the portion P16 of FIG.
  • FIG. 16B is an enlarged view showing a first example of a virtual cut surface portion of a portion corresponding to the portion P16 of FIG. 3 in the solar cell element according to a modification.
  • FIG. 16C is an enlarged view showing a second example of a virtual cut surface portion of a portion corresponding to the portion P16 of FIG. 3 in the solar cell element according to one modification.
  • Fig.17 (a) is an enlarged view which shows the 1st example of the virtual cutting plane part of the part corresponding to the part P16 of FIG. 3 among the solar cell elements which concern on another one modification.
  • FIG. 17B is an enlarged view showing a second example of a virtual cut surface portion of a portion corresponding to the portion P16 of FIG. 3 in a solar cell element according to another modification.
  • FIG. 17C is an enlarged view showing a third example of a virtual cut surface portion of a portion corresponding to the portion P16 of FIG. 3 in a solar cell element according to another modification.
  • a passivation layer, a protective layer, and a back electrode are formed in this order on the back surface of the semiconductor substrate.
  • the protective layer is formed of, for example, an oxide film formed of silicon oxide or the like, a nitride film formed of silicon nitride or the like, or a film in which an oxide film and a nitride film are stacked.
  • This protective layer is formed, for example, by a wet process or a dry process.
  • a coating method for applying and drying an insulating paste containing a siloxane resin is applied.
  • the dry process for example, chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), sputtering or the like is applied.
  • the fine concavo-convex structure (texture) for reducing reflection of irradiated light may be formed in the front side of a semiconductor substrate, for example.
  • a texture is formed on the semiconductor substrate by performing wet etching using, for example, an alkaline aqueous solution such as sodium hydroxide or an acidic aqueous solution such as hydrofluoric-nitric acid.
  • texture may be formed on the entire surface including the back surface as well as the front surface of the semiconductor substrate.
  • a paste containing metal powder mainly containing aluminum, a glass component, and an organic vehicle (also referred to as a metal paste) is applied onto the protective layer, and the metal paste is fired to form the back surface side. It may form a collecting electrode.
  • the distribution of the components of the metal paste tends to be biased due to the presence of irregularities on the surface of the protective layer. For this reason, the adhesion strength of the current collection electrode to the protective layer tends to be nonuniform.
  • the protective layer may be peeled off from the back surface side of the semiconductor substrate.
  • the stress generated between the semiconductor substrate and the protective layer increases due to expansion and contraction accompanying the temperature change of the protective layer, the warpage of the solar cell element may increase, and the solar cell element may be cracked or broken. There is. As a result, the photoelectric conversion efficiency in the solar cell element may be reduced.
  • the present inventors have created a technology that can improve the photoelectric conversion efficiency of a PERC type solar cell element.
  • the longitudinal direction of the first output extraction electrode 7a is the + Y direction
  • the short direction of the first output extraction electrode 7a is the + X direction
  • the sun is orthogonal to both the + X direction and the + Y direction.
  • the normal direction of the front surface 10 fs of the battery element 10 is the + Z direction.
  • the solar cell element 10 according to the first embodiment is a PERC type solar cell element.
  • the solar cell element 10 mainly includes a light receiving surface (also referred to as a front surface) 10 fs, and a surface (also referred to as a back surface) 10 bs located on the opposite side of the front surface. And.
  • the front surface 10 fs faces the + Z direction
  • the back surface 10 bs faces the ⁇ Z direction.
  • the solar cell element 10 includes, for example, a semiconductor substrate 1, a passivation layer 4, an antireflection layer 5, a protective layer 6, a front electrode 7, and a back electrode 8.
  • the semiconductor substrate 1 has a first surface 1 bs, a second surface 1 fs, and a third surface 1 ss.
  • the first surface 1 bs is located on the back surface 10 bs side.
  • the second surface 1 fs is located on the front surface 10 fs side. In other words, the first surface 1 bs and the second surface 1 fs are located in directions opposite to each other.
  • the third surface 1ss is located in a state in which the first surface 1bs and the second surface 1fs are connected. In other words, the third surface 1 ss is an end surface in a state of forming the outer peripheral edge of the semiconductor substrate 1. In the example of FIGS. 1 to 3, the first surface 1 bs is in the state of facing the ⁇ Z direction.
  • the second surface 1 fs is in the state of facing the + Z direction.
  • the semiconductor substrate 1 has a flat form having a thickness along the + Z direction. For this reason, the first surface 1 bs and the second surface 1 fs are in the state of constituting the plate surface of the semiconductor substrate 1 along the XY plane.
  • the semiconductor substrate 1 also has a first semiconductor layer 2 and a second semiconductor layer 3.
  • the first semiconductor layer 2 is in a state of being constituted by a semiconductor having a first conductivity type.
  • the second semiconductor layer 3 is in a state of being constituted by a semiconductor having a second conductivity type opposite to the first conductivity type.
  • the first semiconductor layer 2 is located in a portion of the semiconductor substrate 1 on the first surface 1 bs side.
  • the second semiconductor layer 3 is located in the surface layer portion of the semiconductor substrate 1 on the second surface 1 fs side. In the example of FIG. 3, the second semiconductor layer 3 is located on the first semiconductor layer 2.
  • the semiconductor substrate 1 is a silicon substrate.
  • a polycrystalline or single crystal silicon substrate is employed as the silicon substrate.
  • the silicon substrate is, for example, a thin substrate having a thickness of 250 ⁇ m or less or 150 ⁇ m or less.
  • the silicon substrate has, for example, a rectangular outer edge shape in plan view. If the semiconductor substrate 1 having such a shape is adopted, the gaps between the solar cell elements 10 may be small when the solar cell module 10 is manufactured by arranging the plurality of solar cell elements 10.
  • the p-type silicon substrate is, for example, boron as a dopant element in polycrystalline or single crystal silicon crystal. Alternatively, it may be manufactured to contain an impurity such as gallium.
  • the n-type second semiconductor layer 3 can be generated by diffusing an impurity such as phosphorus as a dopant in the surface layer portion on the second surface 1 fs side of the p-type silicon substrate.
  • the semiconductor substrate 1 in which the p-type first semiconductor layer 2 and the n-type second semiconductor layer 3 are stacked can be formed.
  • the semiconductor substrate 1 has a pn junction located at the interface between the first semiconductor layer 2 and the second semiconductor layer 3.
  • the second surface 1 fs of the semiconductor substrate 1 may have, for example, a fine uneven structure (texture) for reducing the reflection of the irradiated light.
  • the height of the convex portion of the texture is, for example, about 0.1 ⁇ m to 10 ⁇ m.
  • the distance between the apexes of adjacent protrusions is, for example, about 0.1 ⁇ m to about 20 ⁇ m.
  • the recess may be substantially spherical, or the protrusion may be pyramidal.
  • the “height of the convex portion” described above is, for example, a straight line passing through the bottom of the recess in FIG. 3 as a reference line, and from the reference line in a direction (here, + Z direction) perpendicular to the reference line. It is the distance to the top of the convex part.
  • the semiconductor substrate 1 has a third semiconductor layer 2bs.
  • the third semiconductor layer 2 bs is located in the surface layer portion of the semiconductor substrate 1 on the first surface 1 bs side.
  • the conductivity type of the third semiconductor layer 2bs is the same as the conductivity type of the first semiconductor layer 2 (p type in this embodiment).
  • the concentration of the dopant contained in the third semiconductor layer 2 bs is higher than the concentration of the dopant contained in the first semiconductor layer 2.
  • the third semiconductor layer 2 bs forms an internal electric field on the side of the first surface 1 bs of the semiconductor substrate 1. Thereby, in the vicinity of the first surface 1 bs of the semiconductor substrate 1, recombination of minority carriers generated in the semiconductor substrate 1 by photoelectric conversion in response to light irradiation can be reduced.
  • the third semiconductor layer 2bs may be formed, for example, by diffusing a dopant element such as aluminum in the surface layer portion of the semiconductor substrate 1 on the first surface 1bs side.
  • the concentration of the dopant element contained in the first semiconductor layer 2 is about 5 ⁇ 10 15 atoms / cm 3 to 1 ⁇ 10 17 atoms / cm 3
  • the concentration of the dopant element contained in the third semiconductor layer 2 bs is And 1 ⁇ 10 18 atoms / cm 3 to 5 ⁇ 10 21 atoms / cm 3 or so.
  • the third semiconductor layer 2 bs is present at a contact portion between the second current collection electrode 8 b described later and the semiconductor substrate 1.
  • the passivation layer 4 is located on at least the first surface 1 bs of the semiconductor substrate 1.
  • the passivation layer 4 can reduce recombination of minority carriers generated by photoelectric conversion in response to light irradiation in the semiconductor substrate 1.
  • a material of the passivation layer 4 for example, one or more kinds of materials selected from aluminum oxide, zirconium oxide, hafnium oxide, silicon oxide, silicon nitride, silicon oxynitride and the like are employed.
  • the passivation layer 4 is, for example, in a state of being constituted by one layer or two or more layers containing different materials. In this case, the passivation layer 4 can be formed by, for example, a CVD method or an atomic layer deposition (ALD) method.
  • the passivation layer 4 contains aluminum oxide.
  • the aluminum oxide has a negative fixed charge. Therefore, minority carriers (in this case, electrons) generated on the first surface 1 bs side of the semiconductor substrate 1 by the field effect are generated from the interface (first surface 1 bs) between the p-type first semiconductor layer 2 and the passivation layer 4. It is kept away. Thereby, the recombination of minority carriers in the vicinity of the first surface 1 bs of the semiconductor substrate 1 can be reduced. For this reason, the photoelectric conversion efficiency of the solar cell element 10 can be improved.
  • the thickness of the passivation layer 4 is, for example, about 3 nm to 100 nm.
  • the passivation layer 4 may be located, for example, on the second surface 1 fs of the semiconductor substrate 1.
  • the passivation layer 4 may also be located, for example, on the third surface 1 ss as an end face connecting the second surface 1 fs of the semiconductor substrate 1 and the first surface 1 bs.
  • the antireflection layer 5 can reduce the reflectance of light irradiated to the front surface 10 fs of the solar cell element 10.
  • a material of the antireflective layer 5 for example, silicon oxide, aluminum oxide or silicon nitride is adopted.
  • the refractive index and thickness of the antireflective layer 5 are conditions (also referred to as low reflection conditions) in which the reflectance is low with respect to light in a wavelength range that can be absorbed by the semiconductor substrate 1 and contribute to power generation. It can be appropriately set to a value that can be realized. For example, it is conceivable to set the refractive index of the antireflective layer 5 to about 1.8 to 2.5 and to set the thickness of the antireflective layer 5 to about 20 nm to 120 nm.
  • the protective layer 6 is located on the passivation layer 4 located on the first surface 1 bs of the semiconductor substrate 1.
  • the protective layer 6 can protect the passivation layer 4.
  • a material of the protective layer 6 for example, one or more kinds of materials selected from silicon oxide, silicon nitride, silicon oxynitride and the like are employed.
  • the protective layer 6 is located on the passivation layer 4 in a state having a desired pattern.
  • the protective layer 6 has a gap penetrating the protective layer 6 in the thickness direction (here, the + Z direction).
  • This gap may be, for example, a hole in a state in which the periphery along the first surface 1 bs forms a closed through hole, or at least a part of the periphery along the first surface 1 bs It may be a slit-like hole in an open state.
  • FIG. 2 when the protective layer 6 is seen through the plan view from the back surface 10 bs side, it is assumed that the protective layer 6 has a plurality of holes CH1.
  • each hole CH1 may be in a dot (dot) shape or in a band (line) shape.
  • the diameter or width of the hole CH1 is, for example, about 10 ⁇ m to 500 ⁇ m.
  • the pitch of the holes CH1 is, for example, about 0.3 mm to 3 mm.
  • the pitch of the holes CH1 is, for example, the distance between the centers of the holes CH1 adjacent to each other when the protective layer 6 is seen through the plane from the back surface 10bs side.
  • 110 holes CH1 are present.
  • the combination of the size, shape, and number of the holes CH1 may be appropriately adjusted. For this reason, the number of the holes CH1 may be, for example, one or more.
  • the protective layer 6 has a desired pattern of insulating paste by a coating method such as a spray method, a coater method or a screen printing method. It is formed by being dried after being applied to have.
  • the protective layer 6 may be formed directly on the passivation layer 4 or the antireflective layer 5 directly, for example, on the third surface 1 ss of the semiconductor substrate 1. At this time, the leakage current in the solar cell element 10 can be reduced by the presence of the protective layer 6.
  • a metal paste (a first metal paste containing a metal powder mainly composed of aluminum, a glass component, and an organic vehicle) Is applied and baked on the protective layer 6 so as to have a desired shape.
  • the main component means a component having the largest ratio (also referred to as a content ratio) of the contained components.
  • the first metal paste applied directly on the passivation layer 4 causes a fire through of the passivation layer 4 in the hole portion CH1 of the protective layer 6, and the second surface 1bs of the semiconductor substrate 1
  • the collecting electrode 8b is directly connected.
  • the passivation layer 4 and the protective layer 6 are in a state of having a plurality of holes CH1 positioned respectively in a state of penetrating the passivation layer 4 and the protective layer 6.
  • the third semiconductor layer is formed by diffusing aluminum contained in the first metal paste located in the plurality of holes CH1 into the surface layer portion of the first surface 1bs of the semiconductor substrate 1 Two bs are formed.
  • the first metal paste is used as the passivation layer 4 in the portion covered with the protective layer 6 in the passivation layer 4. Do not fire through.
  • the passivation layer 4 can be present on the first surface 1 bs of the semiconductor substrate 1 in a pattern corresponding to the desired pattern of the protective layer 6.
  • the thickness of the protective layer 6 is, for example, about 0.5 ⁇ m to 10 ⁇ m.
  • the thickness of the protective layer 6 depends on the composition of the insulating paste to be described later for forming the protective layer 6, the shape of the first surface 1bs of the semiconductor substrate 1, and the firing conditions at the time of forming the second collector electrode 8b. , Is set appropriately.
  • the front surface electrode 7 is located on the second surface 1 fs side of the semiconductor substrate 1.
  • the surface electrode 7 has the 1st output extraction electrode 7a and several linear 1st current collection electrodes 7b, as FIG. 1 and FIG. 3 show.
  • the first output lead electrode 7 a can take out the carrier obtained by photoelectric conversion according to the irradiation of light in the semiconductor substrate 1 to the outside of the solar cell element 10.
  • a bus bar electrode having, for example, an elongated rectangular shape is employed in plan view of the front surface 10 fs.
  • the length (also referred to as the width) of the first output lead electrode 7a in the short direction is, for example, about 0.3 mm to 2.5 mm.
  • At least a part of the first output lead-out electrode 7a is in a state of being electrically connected in a state of intersecting with the first current collection electrode 7b.
  • the first current collecting electrode 7 b can collect carriers obtained by photoelectric conversion according to the light irradiation in the semiconductor substrate 1.
  • Each first current collecting electrode 7 b is, for example, a linear electrode having a width of about 20 ⁇ m to 200 ⁇ m. In other words, the width of each first current collecting electrode 7b is smaller than the width of the first output lead electrode 7a.
  • the plurality of first current collection electrodes 7b are located, for example, in a state of being spaced apart from each other by about 1 mm to 3 mm.
  • the thickness of the surface electrode 7 is, for example, about 3 ⁇ m to 30 ⁇ m.
  • Such a surface electrode 7 is formed by, for example, applying a metal paste (also referred to as a second metal paste) containing metal particles containing silver as a main component to a desired shape by screen printing or the like. Can be formed by firing. Further, for example, the auxiliary electrode 7c having the same shape as that of the first current collection electrode 7b is located along the edge portions respectively present on the + X direction side and the ⁇ X direction side of the semiconductor substrate 1 The first collecting electrodes 7b may be electrically connected to each other.
  • a metal paste also referred to as a second metal paste
  • the auxiliary electrode 7c having the same shape as that of the first current collection electrode 7b is located along the edge portions respectively present on the + X direction side and the ⁇ X direction side of the semiconductor substrate 1
  • the first collecting electrodes 7b may be electrically connected to each other.
  • the back electrode 8 is located on the first surface 1 bs side of the semiconductor substrate 1.
  • the back surface electrode 8 has the 2nd output extraction electrode 8a and the 2nd current collection electrode 8b, as FIG. 2 and FIG. 3 show.
  • the second output lead electrode 8 a is located on the first surface 1 bs side of the semiconductor substrate 1.
  • the second output extraction electrode 8 a is an electrode for extracting carriers obtained by photoelectric conversion in the solar cell element 10 to the outside of the solar cell element 10.
  • the thickness of the second output lead-out electrode 8a is, for example, about 3 ⁇ m to 20 ⁇ m.
  • the width of the second output lead-out electrode 8a is, for example, about 1.3 mm to 7 mm.
  • the second output lead-out electrode 8a contains silver as a main component
  • the second output lead-out electrode 8a is, for example, a metal paste (third metal paste) containing a metal powder mainly containing silver, a glass component and an organic vehicle
  • the third metal paste may be formed by firing after the coating is applied to a desired shape by screen printing or the like.
  • the second current collection electrode 8 b is located on the protective layer 6 on the first surface 1 bs side of the semiconductor substrate 1.
  • the second current collection electrode 8 b is in a state of being electrically connected to the semiconductor substrate 1.
  • the second current collection electrode 8b includes an electrode layer 8bl and a connection portion 8bc.
  • the electrode layer 8 bl is a layered portion located on the protective layer 6.
  • Connecting portion 8 bc electrically connects electrode layer 8 bl to first surface 1 bs of semiconductor substrate 1 at a plurality of holes CH 1 positioned respectively in a state of penetrating through passivation layer 4 and protective layer 6. It is the part located in the state where it is doing.
  • the second current collection electrode 8 b can collect carriers obtained by photoelectric conversion in the semiconductor substrate 1 according to the light irradiation on the first surface 1 bs side of the semiconductor substrate 1.
  • the second current collection electrode 8 b is located in a state electrically connected to at least a part of the second output extraction electrode 8 a.
  • the thickness of the electrode layer 8bl in the second current collection electrode 8b is, for example, about 15 ⁇ m to 50 ⁇ m.
  • the second current collection electrode 8 b has, for example, the same shape as the first current collection electrode 7 b on the first surface 1 bs of the solar cell element 10 and is connected to the second output extraction electrode 8 a It may be located in the state. If such a structure is adopted, light incident on the back surface 10 bs of the solar cell element 10 can also be used for photoelectric conversion in the solar cell element 10. Thereby, for example, the output of the solar cell element 10 can be improved.
  • the light incident on the back surface 10bs can be generated, for example, by the reflection of sunlight on the ground or the like.
  • FIGS. 4 (a) and 4 (b) The structure on the back surface 10bs side of the solar cell element 10 according to the first embodiment will be described based on FIGS. 4 (a) and 4 (b).
  • observing the surface shape of the protective layer 6 with an optical microscope or a scanning electron microscope (SEM: Scanning Electron Microscope) Can.
  • SEM Scanning Electron Microscope
  • the cross section of the protective layer 6 is observed by SEM or the like. can do.
  • the protective layer 6 has a plurality of convex portions 6p located on the surface of the second current collection electrode 8b on the electrode layer 8bl side.
  • the plurality of convex portions 6 p are located on the surface of the protective layer 6 opposite to the surface on which the passivation layer 4 is located.
  • the surface of the protective layer 6 opposite to the surface on which the passivation layer 4 is located is the surface of the protective layer 6 on which the electrode layer 8 b 1 is located.
  • the protective layer 6 has a plurality of convex portions 6 p and a non-convex portion 6 ap, which are located on the electrode layer 8 bl side of the second collecting electrode 8 b.
  • the non-convex portion 6 ap is a portion other than the plurality of convex portions 6 p, which is located on the surface of the protective layer 6 on the electrode layer 8 bl side.
  • the surface of the protective layer 6 on the electrode layer 8 bl side has a concavo-convex structure including the convex portion 6 p and the non-convex portion 6 ap.
  • each convex portion 6p is positioned in a state of projecting in the -Z direction with reference to the non-convex portion 6ap.
  • the protective layer 6 is located on the surface of the second current collection electrode 8b on the electrode layer 8bl side, and the convex portion 6p, and the convex shape You may have non-convex-shaped parts 6ap other than the part 6p.
  • the convex portion 6 p and the non-convex portion 6 ap are located on the surface of the protective layer 6 opposite to the surface on which the passivation layer 4 is located.
  • each convex portion 6p is positioned in a state of projecting in the -Z direction with reference to the non-convex portion 6ap.
  • the concavo-convex structure on the surface of the protective layer 6 may be derived from, for example, the concavo-convex structure 1 rg of the first surface 1 bs of the semiconductor substrate 1.
  • a portion (also referred to as a recess) 1r positioned in a state of being recessed in the + Z direction, and in the -Z direction.
  • a portion (also referred to as a convex portion) 1p positioned in a protruding state.
  • the concavo-convex structure 1 rg is in a state of being configured to have the concave portion 1 r and the convex portion 1 p.
  • the passivation layer 4 and the protective layer 6 having a small thickness are formed in this order on the concavo-convex structure 1 rg, so that the electrode layer 8 bl of the protective layer 6 is to be formed.
  • a concavo-convex structure corresponding to the concavo-convex structure 1 rg of the semiconductor substrate 1 may be formed on the surface.
  • the above-described fine on the second surface 1 fs side by wet etching using an alkaline aqueous solution such as sodium hydroxide or an acidic aqueous solution such as fluoronitric acid.
  • An uneven structure is formed.
  • the concavo-convex structure is formed on the second surface 1 fs side
  • the concavo-convex structure 1 rg may be formed on the first surface 1 bs side of the semiconductor substrate 1.
  • each of the plurality of convex portions 6p in the protective layer 6 has one or more concave shapes on the electrode layer 8bl side of the second current collection electrode 8b. It has a portion 6pr.
  • the convex portion 6p has a plurality of concave portions 6pr.
  • FIG. 4B six concave portions 6pr located in the convex portion 6p are drawn.
  • FIG. 5 (b) seven concave portions 6pr located in the convex portion 6p are drawn.
  • an organic filler is contained in the insulating paste used when forming the protective layer 6, and the organic filler is thermally decomposed when the insulating paste is dried.
  • the filler may be formed as a trace of the extinguished area.
  • a part of the electrode layer 8bl of the second collecting electrode 8b is located in the internal space SC1 of the concave portion 6pr.
  • a component also referred to as an electrode component
  • the electrode component contains at least a glass component. This glass component may be derived from, for example, the glass component contained in the first metal paste used when forming the second current collection electrode 8b.
  • the protective layer 6 and the second current collection are The adhesion to the electrode 8b is reduced.
  • four types of experimental solar cell elements 110 are manufactured as samples, and the adhesion of the second current collection electrode 108b to the protective layer 106 is obtained. Experiments were conducted. As a result, it was confirmed that when the content of the glass component contained in the first metal paste decreases, the adhesion of the second current collection electrode 108b to the protective layer 106 decreases.
  • a polycrystalline silicon substrate having rectangular front and back surfaces with a side of about 156 mm and a thickness of about 200 ⁇ m was prepared.
  • a passivation layer of about 50 nm was formed by the ALD method on the back surface side of this polycrystalline silicon substrate, and a protective layer 106 was formed on this passivation layer.
  • an insulating paste containing a siloxane resin, an organic solvent, and a plurality of inorganic fillers is applied by a coater method on the passivation layer, and dried at about 270 ° C. to have a thickness of about 1 ⁇ m.
  • the protective layer 106 was formed.
  • a first metal paste containing a metal powder containing aluminum (Al) as a main component, a glass component, and an organic vehicle was applied to substantially the entire surface of the protective layer 106 by screen printing.
  • four types of first metal pastes were used in which the content of the glass component was four levels of 2% by mass, 3.5% by mass, 4% by mass, and 5% by mass.
  • a third metal paste containing a metal powder containing silver as a main component, an organic vehicle, and a glass frit was applied by screen printing to a pattern of the second output extraction electrode 108a. Then, by firing the first metal paste and the third metal paste under the condition that the maximum temperature is about 740 ° C.
  • the heating time is about one minute (min)
  • the second output extraction electrode 108 a and the second output extraction electrode 108 a A back electrode 108 including the two current collection electrodes 108 b was formed. Thereby, samples of solar cell elements 110 for four types of experiments were produced.
  • ethylene vinyl acetate is provided in a region Aa0 surrounded by a two-dot chain line on the second current collection electrode 108b. It stuck, heating resin of copolymer (EVA). Then, an experiment was conducted to confirm whether or not the second current collection electrode 108 b is peeled off from the protective layer 106 by peeling off the EVA resin from the second current collection electrode 108 b. At this time, as shown in FIG. 6 (b), the content of the glass component in the first metal paste used for the preparation is 4 mass% and 5 among the samples of the four types of experimental solar cell elements 110.
  • the second current collection electrode 108 b was not peeled off from the protective layer 106 for the sample that was% by mass.
  • the content of the glass component in the first metal paste used for preparation is as low as 3.5 mass% and 2 mass%, it is recognized that the second current collection electrode 108 b peels off from the protective layer 106 It was done. From this experimental result, it was confirmed that when the content of the glass component contained in the first metal paste decreases, the adhesion of the second current collection electrode 108b to the protective layer 106 decreases. Thereby, it was found that if the content of the glass component in the first metal paste is increased, the adhesion between the protective layer 106 and the metal particles in the second current collection electrode 108b is enhanced due to the presence of the glass component.
  • the concave portion 6pr is present in the convex portion 6p present on the surface of the protective layer 6. Therefore, for example, when the first metal paste is applied on the protective layer 6 to form the second current collecting electrode 8b, the convex portion 6p may be formed even if the surface of the protective layer 6 has an uneven structure.
  • the glass component and the like in the first metal paste penetrate into the existing concave portion 6pr. Therefore, for example, when forming the configuration shown in FIG. 4A and FIG. 5A, in the first metal paste located on the convex portion 6p, the glass component, the organic vehicle, etc.
  • the diameter of the concave portion 6pr present on the surface of the protective layer 6 is, for example, 0.1 ⁇ m to It is about 10 ⁇ m.
  • a glass component in a molten state in the first metal paste can easily enter the concave portion 6pr.
  • the adhesion of the second current collection electrode 8b to the protective layer 6 can be improved.
  • the depth of the concave portion 6pr present on the surface on the electrode layer 8bl side of the second current collection electrode 8b of the protective layer 6 is, for example, about 0.1 ⁇ m to 1 ⁇ m. .
  • the depth of the concave portion 6pr is smaller than the height of the convex portion 6p, the component of the first metal paste applied on the protective layer 6 when forming the second current collecting electrode 8b. Distribution is less likely to occur. As a result, for example, the adhesion of the second current collection electrode 8 b on the protective layer 6 is unlikely to be uneven.
  • the thickness (also referred to as the minimum film thickness) of the protective layer 6 in the portion where the concave portion 6pr is present in the protective layer 6 is about 0.5 ⁇ m or more, passivation by the protective layer 6 is performed. The function of protecting the layer 4 can be secured.
  • the first distance is also referred to as D1.
  • D1 a distance between centers of adjacent concave portions 6pr is adopted.
  • the first distance D1 may be, for example, an average value of distances between centers of adjacent concave portions 6pr, or even a distance between adjacent concave portions 6pr (also referred to as a separation distance). It may be an average value of the separation distance between adjacent concave portions 6pr.
  • the distance (also referred to as a second distance) between adjacent convex portions 6p among the plurality of convex portions 6p is D2.
  • D2 the distance between the centers or the apexes of adjacent convex portions 6p is adopted.
  • the second distance D2 may be, for example, an average value of distances between centers or apexes of adjacent convex portions 6p, or may be a distance between adjacent convex portions 6p. It may be an average value of the separation distances of the adjacent convex portions 6p. Further, as shown in FIGS.
  • a distance (also referred to as a third distance) between adjacent connection portions 8bc among a plurality of connection portions 8bc existing in a plurality of hole portions CH1 is D3.
  • the third distance D3 may be, for example, an average value of distances between centers of adjacent connection portions 8bc, or may be a separation distance between adjacent connection portions 8bc, or adjacent connection portions 8bc.
  • the average value of the separation distances of for example, if the first distance D1 is shorter than any of the second distance D2 and the third distance D3, the adhesion of the second current collection electrode 8b to the protective layer 6 can be sufficiently improved.
  • partial peeling of the second current collection electrode 8 b from the protective layer 6 does not easily occur. Therefore, the photoelectric conversion efficiency in the PERC solar cell element 10 can be improved. Furthermore, here, for example, adjacent concave portions 6pr may be connected to each other. In this case, the adhesion of the second current collection electrode 8b to the protective layer 6 can be further improved. As a result, for example, partial peeling of the second current collection electrode 8 b from the protective layer 6 is less likely to occur.
  • the ratio of the concave portion 6pr to the area of the unit area in the convex portion 6p is about 5% to 40%.
  • the adhesion of the second current collection electrode 8b to the protective layer 6 can be easily improved.
  • the surface of the protective layer 6 on the electrode layer 8 bl side is observed by SEM.
  • the plane can be viewed in plan.
  • the unit area is set, for example, in the range of 10 ⁇ m 2 to 20 ⁇ m 2 .
  • the non-convex portion 6ap of the protective layer 6 also has one or more concave portions 6pr, similarly to the convex portion 6p. It may be Thereby, for example, a plurality of concave portions 6pr may exist over a wide range in the portion of the protective layer 6 on the electrode layer 8bl side of the second current collection electrode 8b. Then, for example, in the internal space SC1 of the concave portion 6pr of the non-convex portion 6ap, an electrode component including a glass component in a state of constituting the electrode layer 8bl of the second current collection electrode 8b is positioned .
  • the distribution of the components of the first metal paste applied onto the protective layer 6 is less likely to be uneven when the second current collection electrode 8 b is formed.
  • the distribution of the adhesion between the protective layer 6 and the second current collection electrode 8 b is unlikely to be biased.
  • partial peeling of the second current collection electrode 8 b from the protective layer 6 does not easily occur. Therefore, the photoelectric conversion efficiency in the PERC solar cell element 10 can be improved.
  • Insulating paste> In the first embodiment, for example, two types of insulating pastes are used to form the protective layer 6.
  • the two types of insulating pastes include a first insulating paste and a second insulating paste.
  • Each of the first insulating paste and the second insulating paste contains, for example, a siloxane resin, an organic solvent, and a plurality of fillers.
  • the siloxane resin is a siloxane compound having a Si—O—Si bond (siloxane bond).
  • siloxane resin for example, a low molecular weight resin having a molecular weight of 10,000 or less, which is produced by hydrolyzing alkoxysilane or silazane or the like and condensation polymerization, is employed.
  • the plurality of fillers in the first insulating paste include fillers (also referred to as inorganic fillers) whose main component is an inorganic material.
  • the plurality of fillers in the second insulating paste contain a filler whose main component is an organic material (also referred to as an organic filler).
  • the plurality of fillers in the second insulating paste may contain an inorganic filler.
  • the first insulating paste can be manufactured as follows.
  • a mixed solution is prepared by mixing a siloxane resin precursor, water, an organic solvent, a catalyst, and a filler.
  • silane compound having a Si—O bond or a silazane compound having a Si—N bond may be employed as a precursor of the siloxane resin. These compounds have the property of causing hydrolysis (also referred to as hydrolyzability). Moreover, the precursor of a siloxane resin becomes a siloxane resin by hydrolyzing and producing condensation polymerization.
  • the silane compound is represented by the following general formula 1.
  • N in the general formula 1 is, for example, an integer of 0, 1, 2 or 3.
  • R1 and R2 in formula 1 is a methyl group (-CH 3) and ethyl group (-C 2 H 5) alkyl groups such as (-C m H 2m + 1) or phenyl group (-C 6 H 5), etc.
  • m is a natural number.
  • the silane compound includes, for example, a silane compound in which at least R 1 has an alkyl group (also referred to as an alkyl group-based silane compound).
  • the alkyl group-based silane compound for example, methyltrimethoxysilane (CH 3 -Si- (OCH 3 ) 3 ), dimethyldimethoxysilane ((CH 3 ) 2 -Si- (OCH 3 ) 2 ), Triethoxymethylsilane (CH 3 -Si- (OC 2 H 5 ) 3 ), diethoxydimethylsilane ((CH 3 ) 2 -Si- (OC 2 H 5 ) 2 ), trimethoxypropylsilane ((CH 3 ) 3 O) 3 -Si- (CH 2 ) 2 CH 3 ), triethoxypropylsilane ((C 2 H 5 O) 3 -Si- (CH 2 ) 2 CH 3 ), hexyltrimethoxys
  • the alkyl group is a methyl group, an ethyl group or a propyl group
  • an alcohol as a by-product which has a small number of carbon atoms and is easy to volatilize may be generated when the precursor of the siloxane resin is hydrolyzed.
  • by-products are easily removed in the process described later.
  • the protective layer 6 is formed, generation of pores due to evaporation of by-products hardly occurs, so that the protective layer 6 becomes dense, and the barrier property of the protective layer 6 can be improved.
  • the precursor of the siloxane resin has a phenyl group
  • the precursor of the siloxane resin is hydrolyzed and subjected to condensation polymerization, and byproducts generated by the hydrolysis and condensation polymerization of the phenyl group are removed.
  • an insulating paste is formed by mixing a siloxane resin, an organic solvent and a filler in a state in which by-products are removed, the amount of by-products contained in the insulating paste is reduced. .
  • an insulating paste is generated, for example, in the case of applying the insulating paste by screen printing, it is reduced that the emulsion of the screen plate making is dissolved by a by-product. As a result, the dimension of the pattern of the screen plate making is less likely to change.
  • the silane compounds also include, for example, silane compounds in which R1 and R2 have both a phenyl group and an alkyl group.
  • a silane compound for example, trimethoxyphenylsilane (C 6 H 5 -Si- (OCH 3 ) 3 ), dimethoxydiphenylsilane ((C 6 H 5 ) 2 -Si- (OCH 3 ) 2 ), Methoxytriphenylsilane ((C 6 H 5 ) 3 -Si-OCH 3 ), triethoxyphenylsilane (C 6 H 5 -Si- (OC 2 H 5 ) 3 ), diethoxydiphenylsilane ((C 6 H 5) ) 2- Si- (OC 2 H 5 ) 2 ), ethoxytriphenylsilane ((C 6 H 5 ) 3 -Si-OC 2 H 5 ), triisopropoxyphenylsilane (C 6 H 5 -Si- (OC
  • silane compounds for example, if a silane compound containing two or more OR bonds is adopted, a siloxane bond (Si-O-Si bond) is generated by causing condensation polymerization after the silane compound is hydrolyzed. The number of) can be increased. This can increase the number of siloxane bond networks in the silicon oxide that forms the protective layer 6. As a result, the barrier properties of the protective layer 6 can be improved.
  • the silazane compound may be either an inorganic silazane compound or an organic silazane compound.
  • examples of the inorganic silazane compound include polysilazane (— (H 2 SiNH) —).
  • the organic silazane compound for example, hexamethyldisilazane ((CH 3 ) 3 -Si-NH-Si- (CH 3 ) 3 ), tetramethylcyclodisilazane ((CH 3 ) 2 -Si- (NH) 2 And -Si- (CH 3 ) 2 ) and tetraphenylcyclodisilazane ((C 6 H 5 ) 2 -Si- (NH) 2 -Si- (C 6 H 5 ) 2 ).
  • Water is a liquid for hydrolyzing the precursor of the siloxane resin.
  • pure water is used as water.
  • water reacts to the bond of Si-OCH 3 of the silane compound to form Si-OH bond and HO-CH 3 (methanol).
  • the organic solvent is a solvent for producing a paste containing a siloxane resin from a precursor of the siloxane resin. Moreover, the organic solvent can mix the precursor of siloxane resin, and water.
  • the organic solvent for example, diethylene glycol monobutyl ether, methyl cellosolve, ethyl cellosolve, ethyl alcohol, 2- (4-methylcyclohex-3-enyl) propan-2-ol, 2-propanol or the like is used.
  • any one of these organic solvents and an organic solvent in which two or more organic solvents are mixed may be used.
  • the catalyst can control the rate of reaction as the precursor of the siloxane resin undergoes hydrolysis and condensation polymerization.
  • hydrolysis and condensation polymerization are caused to the Si-OR bond (for example, R is an alkyl group) included in the precursor of the siloxane resin to generate Si-O-Si bond and H 2 O from two or more Si-OH bonds.
  • the rate of reaction to produce (water) can be adjusted.
  • the catalyst for example, one or more inorganic acids or one or more organic acids of hydrochloric acid, nitric acid, sulfuric acid, boric acid, phosphoric acid, hydrofluoric acid, acetic acid and the like are used.
  • a catalyst for example, one or more types of inorganic bases or one or more types of organic bases among ammonia, sodium hydroxide, potassium hydroxide, barium hydroxide, calcium hydroxide and pyridine may be used.
  • the catalyst may be, for example, a combination of an inorganic acid and an organic acid, or a combination of an inorganic base and an organic base.
  • the filler is, for example, an inorganic filler containing silicon oxide, aluminum oxide or titanium oxide.
  • the concentration of the precursor of the siloxane resin becomes 7 mass% to 60 mass%, and the concentration of water is 5 mass % To 40 wt% (may be 10 wt% to 20 wt%), the concentration of the catalyst is 1 ppm to 1000 ppm, the concentration of the organic solvent is 5 wt% to 50 wt%, the concentration of the inorganic filler is 3 wt% to It is adjusted to be 30% by mass.
  • a siloxane resin produced by hydrolysis and condensation polymerization of a precursor of a siloxane resin can be contained in the insulating paste at an appropriate concentration. Also, for example, in the insulating paste, excessive increase in viscosity due to gelation does not easily occur.
  • the siloxane resin precursor and water react with each other to initiate hydrolysis of the siloxane resin precursor. Also, the precursor of the hydrolyzed siloxane resin causes condensation polymerization to begin to form the siloxane resin.
  • the mixed solution is stirred.
  • the mixed solution is stirred using, for example, a mix rotor or a stirrer.
  • the hydrolysis of the precursor of the siloxane resin further proceeds.
  • the precursor of the hydrolyzed siloxane resin causes condensation polymerization, and the siloxane resin continues to be produced.
  • the rotation conditions of the rotation roller of the mix rotor are set to about 400 rpm to 600 rpm, and the stirring conditions are set such that the stirring time is about 30 minutes to 90 minutes.
  • stirring conditions are adopted, the precursor of the siloxane resin, water, the catalyst and the organic solvent can be uniformly mixed.
  • the mixed solution when the mixed solution is stirred, for example, if the mixed solution is heated, hydrolysis and condensation polymerization of the precursor of the siloxane resin easily proceed. As a result, for example, the productivity can be improved by shortening the stirring time, and the viscosity of the mixed solution can be easily stabilized.
  • the first insulating paste can be manufactured by volatilizing water and the catalyst from the mixed solution.
  • the by-products and the organic solvent are also volatilized so that the emulsion of the screen is unlikely to melt and change in size.
  • By-products include, for example, organic components such as alcohols generated by the reaction of a siloxane resin precursor with water.
  • the processing temperature is about room temperature to 90 ° C. (may be about 50 ° C. to 90 ° C.) and the processing time is about 10 minutes to 600 minutes.
  • the mixed solution after stirring is treated.
  • By-products can be removed if the treatment temperature is within the above temperature range.
  • the organic component which is a by-product is easily volatilized within the said temperature range, the improvement of productivity by shortening of processing time may be achieved.
  • the by-product organic component is likely to be volatilized.
  • productivity can be improved by shortening the processing time.
  • the precursor of the siloxane resin remaining without being hydrolyzed may be further hydrolyzed.
  • the method for producing the second insulating paste can be realized, for example, by adding an organic filler to the mixed solution in place of all or part of the inorganic filler in the method for producing the first insulating paste described above.
  • the organic filler is added to the mixed solution after volatilizing the by-products and the organic solvent in the mixed solution so that the dissolution of the organic filler by the by-product and the organic solvent in the mixed solution is less likely to occur.
  • the mixed solution may be stirred.
  • the organic filler for example, one containing as a main component a material that causes thermal decomposition at a temperature at which the second insulating paste is dried when forming the protective layer 6 is employed.
  • the temperature at which the organic filler causes thermal decomposition is, for example, 300 ° C. or less.
  • Such materials include acrylic materials and the like.
  • the average particle size of the organic filler is, for example, about 1 ⁇ m or less.
  • the viscosity of the mixed solution and the concave portion 6pr formed in the protective layer 6 The number can be easily adjusted.
  • the semiconductor substrate 1 has a first surface 1 bs and a second surface 1 fs facing in the opposite direction to the first surface 1 bs.
  • the semiconductor substrate 1 is prepared as shown in FIG.
  • the semiconductor substrate 1 can be formed, for example, using the existing CZ method or casting method.
  • an example using a p-type polycrystalline silicon ingot manufactured by a casting method will be described.
  • the ingot is sliced to a thickness of, for example, 250 ⁇ m or less to manufacture the semiconductor substrate 1.
  • an aqueous solution such as sodium hydroxide, potassium hydroxide, hydrofluoric acid or fluoronitric acid, mechanical damage to the cut surface of the semiconductor substrate 1 And the contaminated layer can be removed.
  • a part of the above-described texture may be formed on the second surface 1 fs of the semiconductor substrate 1, and at least a part of the above-described uneven structure 1 rg may be formed on the first surface 1 bs of the semiconductor substrate 1.
  • the texture is formed on the second surface 1 fs of the semiconductor substrate 1.
  • the texture can be formed by wet etching using an alkaline aqueous solution such as sodium hydroxide or an acidic aqueous solution such as hydrofluoric-nitric acid, or dry etching using a reactive ion etching (RIE) method or the like.
  • RIE reactive ion etching
  • the second semiconductor layer 3 which is an n-type semiconductor region is formed in the surface layer portion on the second surface 1 fs side of the semiconductor substrate 1 having texture.
  • the second semiconductor layer 3 is formed, for example, by applying a paste-like diphosphorus pentoxide (P 2 O 5 ) on the surface of the semiconductor substrate 1 to thermally diffuse phosphorus, or a gaseous oxychloride It can be formed by using a vapor phase thermal diffusion method using phosphorus (POCl 3 ) as a diffusion source.
  • the second semiconductor layer 3 is formed to have, for example, a depth of about 0.1 ⁇ m to 2 ⁇ m and a sheet resistance value of about 40 ⁇ / ⁇ to 200 ⁇ / ⁇ .
  • the semiconductor substrate 1 is subjected to heat treatment for about 5 minutes to 30 minutes at a temperature of about 600 ° C. to 800 ° C. in an atmosphere having a diffusion gas mainly containing POCl 3 or the like.
  • Phosphorous glass is formed on the surface of the semiconductor substrate 1.
  • the semiconductor substrate 1 is subjected to heat treatment for about 10 minutes to about 40 minutes at a relatively high temperature of about 800 ° C. to 900 ° C. in an atmosphere of an inert gas such as argon or nitrogen.
  • an inert gas such as argon or nitrogen.
  • the second semiconductor layer may be formed on the side of the first surface 1 bs.
  • the second semiconductor layer formed on the first surface 1 bs side is removed by etching.
  • the second semiconductor layer formed on the first surface 1 bs side can be removed by immersing a portion on the first surface 1 bs side of the semiconductor substrate 1 in an aqueous solution of hydrofluoric-nitric acid. Thereby, the region having the p-type conductivity type can be exposed on the first surface 1 bs of the semiconductor substrate 1. Thereafter, when the second semiconductor layer 3 is formed, the phosphorus glass attached to the second surface 1 fs side of the semiconductor substrate 1 is removed by etching.
  • the second semiconductor layer formed on the first surface 1 bs side is removed by etching, the second semiconductor layer 3 on the second surface 1 fs side is removed. Removal and damage can be reduced. At this time, the second semiconductor layer formed on the third surface 1 ss of the semiconductor substrate 1 may be removed together.
  • a diffusion mask may be formed in advance on the first surface 1 bs side of the semiconductor substrate 1, the second semiconductor layer 3 may be formed by a vapor phase thermal diffusion method or the like, and then the diffusion mask may be removed.
  • the second semiconductor layer is not formed on the first surface 1 bs side, the step of removing the second semiconductor layer on the first surface 1 bs side is unnecessary.
  • the second semiconductor layer 3 which is an n-type semiconductor layer is located on the second surface 1 fs side, has texture on the second surface 1 fs, and has the concavo-convex structure 1 rg on the first surface 1 bs.
  • the semiconductor substrate 1 including the one semiconductor layer 2 can be prepared.
  • the step of forming passivation layer 4 (also referred to as a second step) is performed.
  • the passivation layer 4 is formed at least on the first surface 1 bs of the semiconductor substrate 1.
  • aluminum oxide is mainly contained on the first surface 1 bs of the first semiconductor layer 2 and the second surface 1 fs of the second semiconductor layer 3.
  • the passivation layer 4 is formed.
  • the antireflective layer 5 is formed on the passivation layer 4.
  • the antireflection layer 5 is made of, for example, a silicon nitride film or the like.
  • Passivation layer 4 can be formed by, for example, a CVD method or an ALD method. According to the ALD method, for example, the passivation layer 4 can be formed all around the semiconductor substrate 1 including the third surface 1ss.
  • the step of forming the passivation layer 4 by the ALD method first, the semiconductor substrate 1 on which the second semiconductor layer 3 is formed is placed in the chamber of the film forming apparatus. Then, in a state where the semiconductor substrate 1 is heated to a temperature range of about 100 ° C. to about 250 ° C., the following steps A to D are repeated a plurality of times to form a passivation layer 4 mainly containing aluminum oxide. Thereby, the passivation layer 4 having a desired thickness is formed.
  • Step A An aluminum source such as trimethylaluminum (TMA) for forming aluminum oxide is supplied onto the semiconductor substrate 1 together with a carrier gas such as Ar gas or nitrogen gas. Thereby, the aluminum source is adsorbed on the entire periphery of the semiconductor substrate 1.
  • the time for which the TMA is supplied is, for example, about 15 milliseconds (msec: msec) to about 3000 milliseconds.
  • the surface of the semiconductor substrate 1 may be terminated with an OH group.
  • the surface of the semiconductor substrate 1 may have a Si—O—H structure. This structure can be formed, for example, by treating the semiconductor substrate 1 with dilute hydrofluoric acid and then washing with pure water.
  • Step B The inside of the chamber of the film forming apparatus is cleaned with nitrogen gas, whereby the aluminum source in the chamber is removed. Furthermore, among the aluminum raw materials physically and chemically adsorbed to the semiconductor substrate 1, aluminum raw materials other than the components chemically adsorbed at the atomic layer level are removed.
  • the time for cleaning the inside of the chamber with nitrogen gas is, for example, about one second (sec) to several tens of seconds.
  • Step C By supplying an oxidizing agent such as water or ozone gas into the chamber of the film forming apparatus, the alkyl group contained in TMA is removed and substituted by an OH group. Thereby, an atomic layer of aluminum oxide is formed on the semiconductor substrate 1.
  • the time during which the oxidizing agent is supplied into the chamber is, for example, about 750 milliseconds to 1100 milliseconds. Also, for example, if hydrogen is supplied together with the oxidizing agent in the chamber, the hydrogen atoms are more easily contained in the aluminum oxide.
  • Step D The oxidizing agent in the chamber is removed by cleaning the chamber of the film forming apparatus with nitrogen gas. At this time, for example, an oxidizing agent which does not contribute to the reaction at the time of formation of aluminum oxide at the atomic layer level on the semiconductor substrate 1 is removed.
  • the time during which the inside of the chamber is purified by nitrogen gas is, for example, about one second or more to several tens of seconds.
  • step A a layer of aluminum oxide having a desired film thickness is formed.
  • the antireflective layer 5 is formed, for example, using a PECVD method or a sputtering method.
  • the semiconductor substrate 1 is previously heated to a temperature higher than the temperature during the formation of the antireflective layer 5. Thereafter, a mixed gas of silane (SiH 4 ) and ammonia (NH 3 ) is diluted with nitrogen (N 2 ) gas, and the reaction pressure is set to about 50 Pa to 200 Pa, and the one that has been plasmatized by glow discharge decomposition is It is deposited on the heated semiconductor substrate 1.
  • the antireflective layer 5 is formed on the semiconductor substrate 1.
  • the film forming temperature is set to about 350 ° C.
  • the preheating temperature of the semiconductor substrate 1 is set to about 50 ° C. higher than the film forming temperature.
  • a frequency of about 10 kHz to 500 kHz is adopted as the frequency of the high frequency power source required for the glow discharge.
  • the flow rate of the gas is appropriately determined depending on the size of the reaction chamber and the like.
  • the flow rate of the gas may be in the range of about 150 milliliters / minute (sccm) to about 6000 milliliters / minute (sccm).
  • the value (B / A) obtained by dividing the flow rate B of the ammonia gas by the flow rate A of the silane gas is in the range of 0.5 to 15.
  • the step of forming the protective layer 6 (also referred to as a third step) is performed.
  • the protective layer 6 is formed by applying a solution so as to form a pattern including the hole CH1 on the passivation layer 4 at least on the first surface 1 bs side of the semiconductor substrate 1 and drying the solution. Is formed.
  • the protective layer 6 having the plurality of concave portions 6pr can be formed.
  • Such a protective layer 6 can be formed, for example, by the following process.
  • a second insulating paste is applied on the layer of the first insulating paste applied on the passivation layer 4.
  • the maximum temperature of the first insulating paste and the second insulating paste after application is set to about 200 ° C. to 350 ° C. using a hot plate or a drying furnace, and the heating time is about 1 minute to 10 minutes. Dry under the conditions that are considered.
  • a protective layer region 6 b is formed.
  • the organic filler contained in the second insulating paste is thermally decomposed by the heat treatment at the time of drying. Thereby, the part which the organic filler lose
  • such a protective layer 6 may be formed, for example, by the following process.
  • the first insulating paste is applied on the passivation layer 4.
  • a second insulating paste is applied on the layer of the first insulating paste applied on the passivation layer 4.
  • the organic filler contained in the second insulating paste does not undergo thermal decomposition, using the first insulating paste and the second insulating paste after application, using a hot plate or a drying furnace, etc., relatively It is dried at a low temperature (for example, about 100 ° C.).
  • an organic solvent is used to dissolve the organic filler located on the surface of the dried second insulating paste.
  • a drying process of evaporating the organic solvent is performed using a hot plate, a drying furnace, or the like. Thereby, a protective layer 6 having a plurality of concave portions 6pr on the surface is formed.
  • the first insulating paste and the second insulating paste described above are applied in a desired pattern on at least a part of the passivation layer 4 using, for example, a spray method, a coater method, a screen printing method, or the like.
  • the protective layer 6 is formed on at least a part of the passivation layer 4.
  • a step of forming an electrode including the front surface electrode 7 and the back surface electrode 8 (also referred to as a fourth step) is performed.
  • a material for electrode formation is disposed on the protective layer 6 and in the hole CH1, and the material for electrode formation is heated, whereby the back electrode 8 is formed.
  • the back surface electrode 8 formed at this time includes the second output extraction electrode 8 a and the second current collection electrode 8 b.
  • the second current collection electrode 8b includes an electrode layer 8bl and a connection portion 8bc.
  • the surface electrode 7 and the back surface electrode 8 are formed.
  • the surface electrode 7 is produced using, for example, a metal powder containing silver as a main component, an organic vehicle, and a second metal paste (also referred to as a silver paste) containing a glass frit.
  • a metal powder containing silver as a main component an organic vehicle
  • a second metal paste also referred to as a silver paste
  • the second metal paste is applied to the second surface 1 fs side of the semiconductor substrate 1.
  • the second metal paste is applied on the antireflection layer 5 formed on the passivation layer 4 on the second surface 1 fs.
  • the application of the second metal paste can be realized by, for example, screen printing.
  • the solvent in the second metal paste may be evaporated and dried at a predetermined temperature.
  • the first output extraction electrode 7a, the first current collection electrode 7b, and the auxiliary electrode 7c included in the surface electrode 7 can be formed in one step. Thereafter, for example, the surface metal 7 is fired by firing the second metal paste under the condition that the maximum temperature is set to 600 ° C. to 850 ° C. in the firing furnace and the heating time is set to about several tens seconds to several tens of minutes. Form.
  • the second output lead-out electrode 8a included in the back surface electrode 8 is manufactured using, for example, a third metal paste (also referred to as silver paste) containing a metal powder containing silver as a main component, an organic vehicle, a glass frit and the like.
  • a third metal paste also referred to as silver paste
  • a screen printing method can be used.
  • the solvent in the third metal paste may be evaporated and dried at a predetermined temperature.
  • the second output extraction electrode is fired by firing the third metal paste under the condition that the maximum temperature is set to 600 ° C. to 850 ° C. in the firing furnace and the heating time is set to about several tens of seconds to several tens of minutes.
  • 8 a is formed on the first surface 1 bs side of the semiconductor substrate 1.
  • the second current collection electrode 8b included in the back surface electrode 8 is produced, for example, using a first metal paste (Al paste) containing a metal powder containing aluminum as a main component, an organic vehicle and a glass frit.
  • a first metal paste Al paste
  • the first metal paste is applied to the first surface 1 bs side of the semiconductor substrate 1 so as to be in contact with a part of the previously applied third metal paste.
  • the first metal paste is applied on the protective layer 6 formed on the passivation layer 4 on the first surface 1 bs and in the hole CH1.
  • the first metal paste may be applied to almost the entire surface on the first surface 1 bs side of the semiconductor substrate 1 except for a part of the portion where the second output lead-out electrode 8 a is formed.
  • the application of the first metal paste can be realized by, for example, screen printing. Further, at this time, the first metal paste also intrudes into the internal space SC1 of the plurality of concave portions 6pr of the protective layer 6.
  • the solvent in the first metal paste may be evaporated and dried at a predetermined temperature.
  • the second current collection is performed by firing the first metal paste under the condition that the maximum temperature is set to 600 ° C. to 850 ° C. in the firing furnace and the heating time is about several tens seconds to several tens of minutes.
  • the electrode 8 b is formed on the first surface 1 bs side of the semiconductor substrate 1. At this time, an electrode component including the glass of the second current collection electrode 8b enters the internal space SC1 of the plurality of concave portions 6pr of the protective layer 6.
  • the first metal paste fires through the passivation layer 4 when it is fired, and is electrically connected to the first semiconductor layer 2.
  • the second current collection electrode 8b is formed.
  • the third semiconductor layer 2bs is also formed along with the formation of the second current collection electrode 8b.
  • the first metal paste on the protective layer 6 is blocked by the protective layer 6. Therefore, when the first metal paste is fired, the passivation layer 4 blocked by the protective layer 6 is hardly affected by the firing.
  • the back electrode 8 can be formed.
  • the first metal paste and the third metal paste are employed as the material for forming the back electrode 8.
  • the second output lead-out electrode 8a may be formed after the second current collection electrode 8b is formed. Even when the second output lead-out electrode 8a is in direct contact with the semiconductor substrate 1, for example, the passivation layer 4 is present between the second output lead-out electrode 8a and the semiconductor substrate 1, It does not have to be in contact.
  • the second output lead electrode 8 a may be formed on the protective layer 6.
  • the surface electrode 7 and the back surface electrode 8 may be formed by applying baking after simultaneously applying each metal paste. Thereby, the productivity of the solar cell element 10 can be improved. Further, in this case, the heat history applied to the semiconductor substrate 1 is reduced, so that the output characteristics of the solar cell element 10 can be improved.
  • the glass in a state in which the electrode layer 8 bl of the second current collection electrode 8 b is formed in the concave portion 6 pr existing in the convex portion 6 p of the protective layer 6 An electrode component comprising the component is located. If such a configuration is adopted, for example, when the first metal paste is applied on the protective layer 6 to form the second current collecting electrode 8 b, the uneven structure exists on the surface of the protective layer 6. Also, the glass component or the like in the first metal paste intrudes into the concave portion 6pr present in the convex portion 6p.
  • the adhesion between the protective layer 6 and the metal particles in the second current collection electrode 8b can be improved in the convex portion 6p due to the presence of the glass component.
  • a so-called anchor effect may occur when a part of the second current collection electrode 8b enters the concave portion 6pr of the protective layer 6, a so-called anchor effect may occur.
  • the adhesion of the second current collection electrode 8 b to the protective layer 6 can be improved.
  • partial peeling of the second current collection electrode 8 b from the protective layer 6 does not easily occur. Therefore, the photoelectric conversion efficiency in the PERC solar cell element 10 can be improved.
  • the protective layer 6 has a plurality of air gaps 6vd located inside the protective layer 6.
  • the diameter of the void 6vd is d4.
  • a mode in which the diameter d4 is shorter than any one of the second distance D2 between adjacent convex portions 6p and the third distance D3 between adjacent connection portions 8bc may be considered.
  • the air gap 6vd for example, a minute air gap having an internal space of a diameter d4 of about 0.1 ⁇ m to 1 ⁇ m is adopted.
  • the thickness (minimum film thickness) of the protective layer 6 excluding the void 6vd is 0.5 ⁇ m. If it is about above, the function which protects passivation layer 4 by protective layer 6 may be secured.
  • the protective layer 6 when the protective layer 6 is formed and when the solar cell element 10 is used, the protective layer 6 may expand or contract according to the temperature change, and may cause contraction according to the condensation polymerization reaction of the protective layer 6 is there. At this time, stress may be generated between the protective layer 6 and a layer adjacent to the protective layer 6 (also referred to as an adjacent layer).
  • a layer adjacent to the protective layer 6 also referred to as an adjacent layer.
  • stress generated between the protective layer 6 and an adjacent layer in a state adjacent to the protective layer 6 occurs.
  • And may be relieved by the plurality of air gaps 6 vd in the protective layer 6.
  • peeling does not easily occur between the protective layer 6 and the adjacent layer in a state adjacent to the protective layer 6.
  • the photoelectric conversion efficiency in the PERC solar cell element 10 can be improved.
  • the distance (also referred to as a fourth distance) between adjacent gap portions 6 vd among the plurality of void portions 6 vd is set to D4.
  • the fourth distance D4 for example, the distance between the centers of the adjacent air gaps 6vd is adopted.
  • the fourth distance D4 may be, for example, the average value of the distance between the centers of the adjacent void portions 6vd, or the separation distance between the adjacent void portions 6vd, or the adjacent void portions 6vd.
  • the density of the plurality of air gaps 6 vd in the protective layer 6 is somewhat high. Thereby, for example, the stress generated between the protective layer 6 and the adjacent layer in a state adjacent to the protective layer 6 is easily relaxed by the plurality of voids 6 vd in the protective layer 6. For this reason, the photoelectric conversion efficiency in the PERC solar cell element 10 can be easily improved.
  • the protective layer 6 having the plurality of voids 6 vd inside can be formed, for example, by the following process.
  • the first insulating paste is applied on the passivation layer 4.
  • a second insulating paste is applied on the layer of the first insulating paste applied on the passivation layer 4.
  • the first insulating paste is applied on the layer of the second insulating paste applied on the layer of the first insulating paste.
  • the second insulating paste is applied on the layer of the first insulating paste applied on the layer of the second insulating paste.
  • the layer of the first insulating paste, the layer of the second insulating paste, the layer of the first insulating paste, and the layer of the second insulating paste after application are dried using a hot plate or a drying furnace. At this time, as the drying conditions, a maximum temperature of about 200 ° C.
  • a heating time of about 1 minute to 10 minutes are adopted.
  • Ru a heating time of about 1 minute to 10 minutes.
  • the first protective layer region 6a and the third protective layer region 6c are formed by drying the first insulating paste.
  • the second protective layer region 6b and the fourth protective layer region 6d are formed by drying the second insulating paste.
  • the organic filler contained in the second insulating paste is thermally decomposed by the heat treatment at the time of drying.
  • a plurality of void portions 6vd are formed in the second protective layer region 6b by the disappearance of the organic filler, and a plurality of concave portions 6pr are formed in the surface of the fourth protective layer region 6d by the disappearance of the organic filler.
  • a protective layer 6 having a plurality of concave portions 6pr on the surface and a plurality of voids 6vd on the inside can be formed.
  • a layer in which an organic binder is contained in the first insulating paste may be applied instead of the layer of the second insulating paste for forming the second protective layer region 6b of FIG. 11.
  • the plurality of void portions 6vd are formed by volatilization of a part of the organic binders among the organic binders present in the layer of the first insulating paste. It can occur.
  • the layer of the second insulating paste for forming at least one of the fourth protective layer region 6d of FIG. 11 and the second protective layer region 6b of FIG. A layer containing a binder may be applied.
  • the plurality of concave portions 6pr are formed by volatilization of a part of the organic binder among the organic binders present in the layer of the first insulating paste. It can occur.
  • the protective layer 6 when the protective layer 6 is seen through from the electrode layer 8bl side of the second current collection electrode 8b, the protective layer 6 is per unit area of the concave portion 6pr.
  • the first region Ar1 and the second region Ar2 may have different numbers.
  • the first region Ar1 is located on the outer peripheral portion OP1 side of the solar cell element 10.
  • the second region Ar2 is located on the central portion CP1 side of the solar cell element 10.
  • the unit area is set to, for example, about 100 mm 2 to 400 mm 2 .
  • the number per unit area of concave portions 6pr present in the first region Ar1 may be larger than the number per unit area of concave portions 6pr present in the second region Ar2.
  • the protective layer 6 having the first area Ar1 and the second area Ar2 may be formed, for example, when the second insulating paste is applied on the layer of the first insulating paste applied on the passivation layer 4. It can be formed by performing the following process. First, the second insulating paste is applied to a region corresponding to the first region Ar1. Next, a second insulating paste having a lower organic filler content than the already applied second insulating paste is applied to the area corresponding to the second area Ar2. Also, for example, in such a process, the second insulating paste is applied on the layer of the first insulating paste applied on the passivation layer 4 to form the first insulating paste and the second insulating paste.
  • the drying may be performed when the second insulating paste is applied on the layer of the first insulating paste further applied on the layer of the second insulating paste.
  • the protective layer 6 having the plurality of void portions 6vd and the first region Ar1 and the second region Ar2 can be formed.
  • the solar cell modules 100 are positioned in a state in which the plurality of solar cell elements 10 are electrically connected in series by the wiring member Tb and aligned in a plane.
  • a plurality of solar cell modules are covered with the sealing material 102 in the gap between the first protective member 101 and the second protective member 104 located in a state of facing each other.
  • a portion (also referred to as a photoelectric conversion portion) 103 including the element 10 is located.
  • the solar cell module 100 has a surface (also referred to as a front surface) 100 fs that mainly receives light, and a surface (also referred to as a back surface) 100 bs that is located on the opposite side of the front surface 100 fs.
  • the light transmitting plate-like second protection member 104 is positioned on the front surface 100 fs side
  • the plate-like or sheet-like first protection member 101 is positioned on the back surface 100 bs.
  • the sealing material 102 located in the gap between the first protective member 101 and the second protective member 104 is located on the front surface 100 fs side with the first sealing material 102 b located on the back surface 100 bs side.
  • a second sealing material 102u is used in the solar cell module 100 .
  • this solar cell module 100 includes a first protective member 101, a first sheet SH1, a photoelectric conversion unit 103, a second sheet SH2, and a second protective member 104.
  • stacked in order of this description may be manufactured by integrating by lamination process.
  • the first sheet SH1 is a sheet-like material that is the source of the first sealing material 102b
  • the second sheet SH2 is a sheet-like material that is the source of the second sealing material 102u.
  • the thickness of the sealing material 102 is large between several solar cell elements 10 comrades. For this reason, expansion and contraction of the sealing material 102 become large between the plurality of solar cell elements 10.
  • the protective layer 6 and the second collection are formed in the first region Ar1 on the outer peripheral portion OP1 side than the second region Ar2 on the central portion CP1 side.
  • the adhesion to the electrode 8 b is high. For this reason, for example, when the lamination process of a laminated body is performed, it is hard to peel off the 2nd current collection electrode 8b from the protective layer 6. As shown in FIG.
  • the second output lead-out electrode 8 a located on the protective layer 6 may be an electrode layer containing a glass component.
  • the glass component of the second output extraction electrode 8 a may be located in the internal space of the concave portion 6 pr of the protective layer 6.
  • the ratio of the concave portion 6pr to the area of the unit area in the convex portion 6p is 5% to 40. It is not limited to about%.
  • This ratio is appropriately set according to, for example, the content of the glass component and the type of the glass component in the second current collection electrode 8 b or the first metal paste for forming the second current collection electrode 8 b.
  • the adhesion of the second current collection electrode 8b to the protective layer 6 can be easily improved. In other words, for example, even if this ratio is appropriately set to a range of a different ratio including a part or all of the range of about 5% to 40% or a range of a ratio different from about 5% to about 40% Good.
  • the passivation layer 4 is positioned from the top of the first surface 1 bs to the top of the third surface 1 ss, and the protective layer 6 is Although it has been located on the passivation layer 4 located on the outer edge Ed1 of the surface 1bs, it is not limited thereto.
  • the passivation layer 4 and the protective layer 6 on the region (also referred to as the outer edge region) Ao1 along the outer edge Ed1 of the first surface 1bs of the first surface 1bs, the passivation layer 4 and the protective layer 6
  • the antireflective layer 5 may not be located.
  • the passivation layer 4 and the antireflective layer 5 located on the third surface 1ss and the passivation layer 4 and the protective layer 6 located on the first surface 1bs are separated on the outer peripheral area Ao1. It may be At this time, it is conceivable that the outer edge area Ao1 is located in the range of the distance L1 from the outer edge Ed1 of the first surface 1bs.
  • the distance L1 may be, for example, about 0.5 mm to 2 mm.
  • the second current collection electrode 8b may not be located on the outer edge area Ao1 of the first surface 1bs. As shown in FIG.
  • the second current collection electrode 8b may be located on at least a part of the outer edge area Ao1 of the first surface 1bs.
  • the third surface 1s to the upper surface of a portion on the outer edge portion Ed1 of the outer edge region Ao1 of the first surface 1bs.
  • Passivation layer 4 and anti-reflective film 5 may be located. At this time, it is conceivable that the passivation layer 4 and the anti-reflection film 5 are located in the range of the distance L2 from the outer edge portion Ed1 on the outer edge region Ao1.
  • the distance L2 may be, for example, about 0.1 mm to 1 mm.
  • a passivation layer is formed from the third surface 1ss to the outer surface area Ao1 of the first surface 1bs.
  • the anti-reflection layer 5 may be positioned to a portion closer to the central portion of the first surface 1 bs than 4.
  • both the passivation layer 4 and the anti-reflection film 5 may be located from the outer edge portion Ed1 to the portion of the distance L2 on the outer edge region Ao1.
  • the second current collection is performed on at least a part of the outer edge area Ao1 of the first surface 1bs.
  • the electrode 8b may be located.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

La présente invention concerne un élément de cellule solaire comprenant : un substrat semi-conducteur ; une couche de passivation ; une couche de protection ; et une couche d'électrode. La couche de passivation est positionnée au-dessus d'une première surface du substrat semi-conducteur. La couche de protection est positionnée au-dessus de la couche de passivation. La couche d'électrode est positionnée au-dessus de la couche de protection, et comprend un composant en verre. La couche de protection a une pluralité de parties convexes positionnées au niveau d'une surface du côté de la couche d'électrode. La pluralité de parties convexes ont respectivement une partie concave au niveau du côté de couche d'électrode. Le composant en verre est positionné dans l'espace interne de la partie concave.
PCT/JP2018/042747 2017-11-30 2018-11-20 Élément de cellule solaire WO2019107211A1 (fr)

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CN111492492A (zh) 2020-08-04

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