WO2019066285A2 - LIGHT EMITTING DISPLAY DEVICE - Google Patents

LIGHT EMITTING DISPLAY DEVICE Download PDF

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Publication number
WO2019066285A2
WO2019066285A2 PCT/KR2018/010353 KR2018010353W WO2019066285A2 WO 2019066285 A2 WO2019066285 A2 WO 2019066285A2 KR 2018010353 W KR2018010353 W KR 2018010353W WO 2019066285 A2 WO2019066285 A2 WO 2019066285A2
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WO
WIPO (PCT)
Prior art keywords
electrode
extraction member
light
light extraction
bank
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PCT/KR2018/010353
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English (en)
French (fr)
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WO2019066285A3 (en
Inventor
Doman Kim
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Lg Display Co., Ltd.
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Publication date
Application filed by Lg Display Co., Ltd. filed Critical Lg Display Co., Ltd.
Publication of WO2019066285A2 publication Critical patent/WO2019066285A2/en
Publication of WO2019066285A3 publication Critical patent/WO2019066285A3/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • the present disclosure relates to an electroluminescent display.
  • Various display devices have replaced heavier and larger cathode ray tubes (CRTs).
  • Examples of the display devices may include a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP), and an electroluminescent display.
  • LCD liquid crystal display
  • FED field emission display
  • PDP plasma display panel
  • electroluminescent display an electroluminescent display.
  • An electroluminescent display is classified into an inorganic electroluminescent display and an organic light emitting diode (OLED) display depending on a material of an emission layer.
  • OLED organic light emitting diode
  • an OLED display is a self-emission display configured to emit light by exciting an organic compound.
  • the OLED display does not require a backlight unit used in a liquid crystal display and thus has advantages of a thin profile, lightness in weight, and a simpler manufacturing process.
  • the OLED display can be also manufactured at a low temperature and has a fast response time of 1 ms or less, low power consumption, a wide viewing angle, and a high contrast. Thus, the OLED display has been widely used.
  • the OLED display includes organic light emitting diodes (OLEDs) converting electric energy into light energy.
  • the OLED includes an anode, a cathode, and an organic compound layer between the anode and the cathode.
  • the OLED display is configured such that the OLED emits light while excitons formed by combining holes from the anode and electrons from the cathode inside an emission layer fall from an excited state to a ground state, and thus displays an image.
  • the present disclosure provides an electroluminescent display capable of implementing an extreme luminance.
  • an electroluminescent display comprising pixels including light emitting elements configured to emit light, a bank configured to partition the pixels, and a light extraction member accommodated inside the bank, wherein a refractive index of the bank is different from a refractive index of the light extraction member.
  • an electroluminescent display comprising pixels including light emitting elements emitting light and partitioned by a bank, and a light extraction member positioned inside the bank and configured to extract at least a portion of the light travelling to the inside of the bank in an orientation direction, wherein a refractive index of the bank is different from a refractive index of the light extraction member.
  • the disclosure can easily extract light, which enters the inside of the bank and may be lost, in the orientation direction by forming the light extraction member capable of changing a light path inside the bank.
  • the embodiment of the disclosure can greatly improve the emission efficiency and achieve the extreme luminance.
  • the disclosure can increase an emission region by extracting light through the light extraction member disposed inside the bank, compared to a related art. Namely, because the embodiment of the disclosure can extract light contributing to the light emission in a formation area of the bank using the light extraction member, at least a portion of the formation area of the bank may be an emission region, unlike the related art. Hence, the embodiment of the disclosure can secure a sufficient aperture ratio and thus can be easily applied to high resolution display devices with high pixel per inch (PPI). In addition, the embodiment of the disclosure can provide an OLED display having a remarkably improved color viewing angle.
  • FIG. 1 is a block diagram schematically illustrating an organic light emitting diode (OLED) display according to an embodiment of the disclosure.
  • FIG. 2 schematically illustrates configuration of a pixel shown in FIG. 1.
  • FIG. 3 is a cross-sectional view illustrating a pixel of an OLED display according to an embodiment of the disclosure.
  • FIG. 4 is a figure for explaining a problem of a related technology.
  • FIG. 5 is a cross-sectional view schematically illustrating an OLED display according to an embodiment of the disclosure.
  • FIG. 6 illustrates a simulation result that a reflectance is determined depending on an incident angle based on Fresnel equation.
  • FIG. 7 illustrates a relationship between a light extraction member and another structure.
  • FIG. 8 is a plan view schematically illustrating an OLED display according to an embodiment of the disclosure.
  • first may be used to describe various components, but the components are not limited by such terms. The terms are used only for the purpose of distinguishing one component from other components. For example, a first component may be designated as a second component, and vice versa, without departing from the scope of the present disclosure.
  • OLED organic light emitting diode
  • electroluminescent display including an organic light emitting material
  • embodiments of the disclosure may be applied to an inorganic electroluminescent display including an inorganic electroluminescent material.
  • FIG. 1 is a block diagram schematically illustrating an OLED display according to an embodiment of the disclosure.
  • FIG. 2 schematically illustrates configuration of a pixel shown in FIG. 1.
  • FIG. 3 is a cross-sectional view illustrating a pixel of an OLED display according to an embodiment of the disclosure.
  • FIG. 4 is a figure for explaining a problem of a related technology.
  • an OLED display includes a display driving circuit and a display panel 10.
  • the display driving circuit includes a data driving circuit 12, a gate driving circuit 14, and a timing controller 16.
  • the display driving circuit applies a video data voltage of an input image to pixels of the display panel 10.
  • the data driving circuit 12 converts digital video data RGB received from the timing controller 16 into an analog gamma compensation voltage and generates a data voltage.
  • the data voltage output from the data driving circuit 12 is supplied to data lines D1 to Dm, where m is a positive integer.
  • the gate driving circuit 14 sequentially supplies a gate signal synchronized with the data voltage to gate lines G1 to Gn and selects pixels of the display panel 10 to which the data voltage is applied, where n is a positive integer.
  • the timing controller 16 receives timing signals, such as a vertical sync signal Vsync, a horizontal sync signal Hsync, a data enable signal DE, and a main clock MCLK, from a host system 19 and synchronizes operation timing of the data driving circuit 12 and operation timing of the gate driving circuit 14 with each other.
  • a data timing control signal for controlling the data driving circuit 12 includes a source sampling clock SSC, a source output enable signal SOE, and the like.
  • a gate timing control signal for controlling the gate driving circuit 14 includes a gate start pulse GSP, a gate shift clock GSC, a gate output enable signal GOE, and the like.
  • the host system 19 may be one of a television system, a set-top box, a navigation system, a DVD player, a Blu-ray player, a personal computer (PC), a home theater system, a phone system, and other systems that include or operate in conjunction with a display.
  • the host system 19 includes a system-on chip (SoC), in which a scaler is embedded, and converts the digital video data RGB of the input image into a format suitable for displaying the input image on the display panel 10.
  • SoC system-on chip
  • the host system 19 transmits the digital video data RGB of the input image and the timing signals Vsync, Hsync, DE and MCLK to the timing controller 16.
  • the display panel 10 includes a pixel array.
  • the pixel array includes pixels defined by the data lines D1 to Dm and the gate lines G1 to Gn.
  • Each pixel includes an organic light emitting diode (OLED) serving as a self-emission element.
  • OLED organic light emitting diode
  • the display panel 10 includes the pixels respectively arranged at intersections formed by intersection of the plurality of data lines D1 to Dm and the plurality of gate lines G1 to Gn.
  • each pixel includes an OLED OLE, a driving thin film transistor (TFT) DT for controlling an amount of current flowing through the OLED OLE, and a programming unit SC for setting a gate-to-source voltage of the driving TFT DT.
  • TFT driving thin film transistor
  • the programming unit SC may include at least one switching TFT and at least one storage capacitor.
  • the switching TFT is turned on in response to a gate signal from a gate line G to thereby apply a data voltage from a data line D to one electrode of the storage capacitor.
  • the driving TFT DT controls an amount of current supplied to the OLED OLE depending on a magnitude of voltage stored in the storage capacitor, thereby adjusting an amount of light emitted by the OLED OLE.
  • the amount of light emitted by the OLED OLE is proportional to the amount of current supplied from the driving TFT DT.
  • the pixel is connected to a high potential voltage source EVDD and a low potential voltage source EVSS and receives a high potential power voltage and a low potential power voltage from a voltage generator (not shown).
  • the TFTs constituting the pixel may be p-type TFTs or n-type TFTs. Further, semiconductor layers of the TFTs constituting the pixel may include amorphous silicon, polycrystalline silicon, or oxide.
  • the OLED OLE includes an anode ANO, a cathode CAT, and an organic compound layer between the anode ANO and the cathode CAT. The anode ANO is connected to the driving TFT DT.
  • a pixel may have a configuration of 2T(Transistor)1C(Capacitor) in which a switching TFT, a driving TFT, a storage capacitor, and an OLED are basically provided.
  • the pixel may have various configurations of 3T1C, 4T2C, 5T2C, 6T2C, 7T2C, and the like.
  • an OLED display includes a substrate SUB including a thin film transistor T and an OLED OLE.
  • a substrate SUB including a thin film transistor T and an OLED OLE.
  • an encapsulation layer covering the thin film transistor T and the OLED OLE may be further provided on the substrate SUS.
  • the encapsulation layer can protect the internal components from moisture and oxygen which may enter from the outside.
  • the substrate SUB may be made of glass material or plastic material.
  • the substrate SUB may be made of plastic material such as polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polycarbonate (PC) and may have flexible characteristics.
  • PI polyimide
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PC polycarbonate
  • the thin film transistor T and the OLED OLE connected to the thin film transistor T are formed on the substrate SUS.
  • a light shielding layer (not shown) and a buffer layer (not shown) may be formed between the substrate SUS and the thin film transistor T.
  • the light shielding layer is disposed to overlap a semiconductor layer, particularly, a channel of the thin film transistor T and can protect a semiconductor element from external light.
  • the buffer layer can block ions or impurities diffused from the substrate SUS and also block moisture penetration from the outside.
  • the thin film transistor T includes a semiconductor layer A, a gate electrode G, a source electrode S, and a drain electrode D.
  • a gate insulating layer GI and the gate electrode G are disposed on the semiconductor layer A.
  • the gate insulating layer GI may function to insulate the gate electrode G and may be formed of silicon oxide (SiOx) or silicon nitride (SiNx). However, embodiments are not limited thereto.
  • the gate insulating layer GI may be formed to cover the entire surface of the substrate SUS. Although not shown, the gate insulating layer GI and the gate electrode G may be patterned using the same mask. In this instance, the gate insulating layer GI and the gate electrode G may have the same planar shape.
  • the gate electrode G is disposed to overlap the semiconductor layer A with the gate insulating layer GI interposed therebetween.
  • the gate electrode G may be formed as a single layer or a multilayer using copper (Cu), molybdenum (Mo), aluminum (Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), tantalum (Ta), tungsten (W), or a combination thereof.
  • An interlayer dielectric layer IN is positioned on the gate electrode G.
  • the interlayer dielectric layer IN may function to insulate the gate electrode G and the source and drain electrodes S and D from each other.
  • the interlayer dielectric layer IN may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof. However, embodiments are not limited thereto.
  • the source electrode S and the drain electrode D are positioned on the interlayer dielectric layer IN.
  • the source electrode S and the drain electrode D are spaced from each other by a predetermined distance.
  • the source electrode S contacts one side of the semiconductor layer A through a source contact hole penetrating the interlayer dielectric layer IN.
  • the drain electrode D contacts the other side of the semiconductor layer A through a drain contact hole penetrating the interlayer dielectric layer IN.
  • Each of the source electrode S and the drain electrode D may be formed as a single layer or as a multilayer.
  • each of the source electrode S and the drain electrode D may be formed of molybdenum (Mo), aluminum (Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), or a combination thereof.
  • each of the source electrode S and the drain electrode D may be formed as a double layer of Mo/Al-Nd, Mo/Al, Ti/Al or Cu/MoTi, or as a triple layer of Mo/Al-Nd/Mo, Mo/Al/Mo, Ti/Al/Ti or MoTi/Cu/ MoTi.
  • the insulating layer is positioned on the thin film transistor T.
  • the insulating layer may include at least one of a passivation layer PAS and a planarization layer OC.
  • the passivation layer PAS can protect the thin film transistor T and may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof.
  • the planarization layer OC can reduce a height difference of an underlying structure and may be formed of an organic material such as photo acryl, polyimide, benzocyclobutene-based resin, and acrylate-based resin.
  • the OLED OLE is positioned on the insulating layer.
  • the OLED OLE includes a first electrode E1 and a second electrode E2 that are positioned opposite each other, and an organic compound layer OL between the first electrode E1 and the second electrode E2.
  • the first electrode E1 may be an anode
  • the second electrode E2 may be a cathode.
  • the first electrode E1 is positioned on the planarization layer OC.
  • the first electrode E1 is connected to the drain electrode D of the thin film transistor T through a contact hole penetrating the passivation layer PAS and the planarization layer OC.
  • the first electrode E1 may include a reflective layer and thus serve as a reflective electrode.
  • the reflective layer may be formed of aluminum (Al), copper (Cu), silver (Ag), nickel (Ni), or a combination thereof.
  • the reflective layer may be formed of an Ag/Pd/Cu (APC) alloy.
  • the first electrode E1 may be formed as a multilayer including a reflective layer.
  • the first electrode E1 may be formed as a triple layer formed of ITO (indium tin oxide)/APC/ITO.
  • a bank BN is positioned on the substrate SUB on which the first electrode E1 is formed, and partitions adjacent pixels.
  • the bank BN may be formed of an organic material such as polyimide, benzocyclobutene-based resin, and acrylate.
  • the bank BN includes an opening exposing at least a portion of the first electrode E1.
  • the bank BN may be configured to expose a center portion of the first electrode E1 and cover an edge of the first electrode E1.
  • the organic compound layer OL is positioned on the first electrode E1.
  • the organic compound layer OL may be dividedly disposed corresponding to each subpixel, or may be entirely formed on a front surface of the substrate SUB.
  • the organic compound layer OL is a layer, in which electrons and holes combine and emit light.
  • the organic compound layer OL includes an emission layer EML and may further include one or more of a hole injection layer HIL, a hole transport layer HTL, an electron transport layer ETL, and an electron injection layer EIL.
  • the second electrode E2 is positioned on the organic compound layer OL.
  • the second electrode E2 may be entirely formed on the front surface of the substrate SUB to cover pixels.
  • the second electrode E2 may be formed of a transparent conductive material such as indium tin oxide (ITO) and indium zinc oxide (IZO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the second electrode E2 may be formed of a material, which is thin enough to transmit light, for example, magnesium (Mg), calcium (Ca), aluminum (Al), silver (Ag), or a combination thereof.
  • the second electrode E2 may serve as a transmissive electrode.
  • a travel direction of radiated light needs to be controlled in a previously set direction (hereinafter referred to as "orientation direction").
  • a transmissive electrode and a reflective electrode may be disposed opposite each other with the organic compound layer OL interposed therebetween, in order to control the travel direction of radiated light.
  • the first electrode E1 may serve as the reflective electrode
  • the second electrode E2 may serve as the transmissive electrode. Partial light travelling in the orientation direction among generated light passes through the transmissive electrode and is emitted to the outside of the display device.
  • the other portion of light After a travel direction of other portion of the generated light is changed to the orientation direction by the reflective electrode, the other portion of light passes through the transmissive electrode and is emitted to the outside of the display device.
  • the reflective electrode is added as described above, a travel direction of light that first travels in directions other than the orientation direction can be changed to the orientation direction. Hence, light efficiency can be improved.
  • a portion IL of light that first travels in directions other than the orientation direction may be totally reflected and waveguided at an interface between thin film layers due to a difference between refractive indexes of the thin film layers constituting the OLED OLE.
  • the light IL that is waveguided through the total reflection at the interface between the thin film layers may not be emitted in the orientation direction and may be trapped inside the element and lost.
  • the light IL may travel in a direction of the bank BN and may be lost inside the bank BN.
  • light, which travels in directions other than the orientation direction and is lost does not contribute to the emission of the OLED OLE and thus is a large factor of a reduction in the emission efficiency.
  • embodiments of the disclosure propose a new structure capable of achieving an extreme luminance by improving outcoupling efficiency.
  • FIG. 5 is a cross-sectional view schematically illustrating an OLED display according to an embodiment of the disclosure.
  • FIG. 6 illustrates a simulation result that a reflectance is determined depending on an incident angle based on Fresnel equation.
  • an OLED display includes a thin film transistor substrate SUB.
  • a thin film transistor (not shown) assigned to each pixel and an OLED OLE connected to the thin film transistor are disposed on the thin film transistor substrate SUB.
  • the OLED OLE includes a first electrode E1, a second electrode E2, and an organic compound layer OL between the first electrode E1 and the second electrode E2.
  • Adjacent pixels may be partitioned by a bank (or referred to as "pixel definition layer") BN, and a planar shape of each pixel may be defined by the bank BN.
  • a position and a shape of the bank BN may be properly selected to form the pixels having a previously set planar shape.
  • a light extraction member EXM is disposed inside the bank BN.
  • the light extraction member EXM functions to change a travel direction of at least a portion EXL of light IL, which is incident on the inside of the bank BN and does not contribute to the light emission, and extract the portion EXL of the light in an orientation direction.
  • the embodiment of the disclosure can guide light provided by the OLED OLE using the light extraction member EXM, so that the light is not trapped inside the bank BN and is extracted.
  • the light extraction member EXM may include an inorganic material or an organic material.
  • the light extraction member EXM may include the inorganic material such as SiO 2 , SiNx and Al 2 O 3 and may include the organic material PI, PA, and epoxy resin.
  • the light extraction member EXM has a refractive index different from the bank BN. Namely, a refractive index n2 of the light extraction member EXM may be different from a refractive index n1 of the bank BN.
  • a travel direction of light provided by the OLED OLE is changed to the orientation direction at an interface of two mediums (i.e., the light extraction member EXM and the bank BN) due to a difference between the refractive indexes of the light extraction member EXM and the bank BN.
  • the light extraction member EXM is configured to extract light entering the inside of the bank BN using the difference between the refractive indexes of the light extraction member EXM and the bank BN.
  • the light extraction member EXM needs to be accommodated inside the bank BN.
  • the light extraction member EXM may have a semicircular or semi-elliptical cross-sectional shape in which an interface (hereinafter referred to as "interface of the light extraction member EXM"), which is between the light extraction member EXM and the bank BN and receives light, forms a curved line.
  • the interface of the light extraction member EXM may be referred to as an incident surface on which a light is incident.
  • the light extraction member EXM may have a convex lens cross-sectional shape that protrudes in the orientation direction.
  • the light extraction member EXM may have a polygonal cross-sectional shape (including a triangle, etc.) in which the interface forms a straight line.
  • the refractive index n2 of the light extraction member EXM may be less than the refractive index n1 of the bank BN.
  • a shape of the interface of the light extraction member EXM on which light is incident may be properly selected, so that the total reflection can be induced, namely, an incident angle of light entering the inside of the bank BN can be equal to or greater than a critical angle.
  • light waveguided to the inside of the bank BN may have a Gaussian distribution.
  • travel direction of light for calculating the incident angle may be determined depending on the Gaussian distribution.
  • the refractive index n2 of the light extraction member EXM and the refractive index n1 of the bank BN may be set so that there is a sufficiently large difference between them.
  • the refractive index n2 of the light extraction member EXM may be greater than the refractive index n1 of the bank BN.
  • a reflectance at the interface of the light extraction member EXM can be improved by controlling the shape of the interface of the light extraction member EXM and the incident angle determined by the travel direction of waveguided light. Hence, outcoupling efficiency can be improved.
  • FIG. 6 illustrates that a reflectance is improved by controlling an incident angle of light when a refractive index of the light extraction member EXM and a refractive index of the bank BN are determined.
  • the incident angle can be controlled depending on the shape of the interface of the light extraction member EXM. For example, as shown in (a) of FIG. 6, when an incident angle was controlled to about 50 ° or more when a refractive index of the light extraction member EXM was 1.7 and a refractive index of the bank BN was 2.5, a reflectance was greatly improved.
  • the refractive index of the light extraction member EXM and the refractive index of the bank BN may be set so that there is a sufficiently large difference between them.
  • a reflectance in an experiment illustrated in (b) of FIG. 6 having a relatively large refractive index difference was higher than the reflectance in the experiment illustrated in (a) of FIG. 6 having a relatively small refractive index difference over the entire range of the incident angle.
  • FIG. 7 illustrates a relationship between a light extraction member and another structure.
  • the light extraction member EXM is disposed on the side of the first electrode E1 and may have a thickness t1 that is greater than a sum t2 of thicknesses of the first electrode E1, the organic compound layer OL, and the second electrode E2. Namely, because the light extraction member EXM functions to extract light, which is waveguided toward the bank BN, through the total reflection at an interface between the thin film layers constituting the OLED OLE, the light extraction member EXM needs to be disposed on a travel path of the light. Thus, the light extraction member EXM may upwardly protrude more than an upper surface UP of a portion of the second electrode E2 that is positioned in an opening OP of the bank BN.
  • the light extraction member EXM and the first electrode E1 may be disposed on an insulating layer IL.
  • the thickness t1 of the light extraction member EXM may be set to be greater than a distance between an upper surface of the insulating layer IL and the upper surface UP of the second electrode E2 inside the opening OP of the bank BN.
  • the light extraction member EXM may be formed to cover one end of the first electrode E1.
  • the light extraction member EXM is sufficiently adjacent to the organic compound layer OL, most of light provided to the inside of the bank BN is not lost inside the bank BN and may be incident on the interface of the light extraction member EXM.
  • the embodiment of the disclosure can more efficiently improve the outcoupling efficiency by increasing an amount of light incident on the interface of the light extraction member EXM.
  • the embodiment of the disclosure can easily extract light, which enters the inside of the bank BN and may be lost, in the orientation direction by forming the light extraction member EXM capable of changing a light path inside the bank BN.
  • the embodiment of the disclosure can greatly improve the emission efficiency and achieve the extreme luminance.
  • the embodiment of the disclosure can increase an emission region by extracting light through the light extraction member EXM disposed inside the bank BN, compared to a related art. Namely, because the embodiment of the disclosure can extract light contributing to the light emission in a formation area of the bank BN using the light extraction member EXM, at least a portion of the formation area of the bank BN may be an emission region, unlike the related art. Hence, the embodiment of the disclosure can secure a sufficient aperture ratio and thus can be easily applied to high resolution display devices with high pixel per inch (PPI). In addition, the embodiment of the disclosure can provide an OLED display having a remarkably improved color viewing angle.
  • FIG. 8 is a plan view schematically illustrating an OLED display according to an embodiment of the disclosure.
  • an OLED display includes pixels PXL.
  • the pixels PXL may have various freeform planar shapes including a circle, an ellipse, a polygon, etc. as well as a planar shape of a rectangle and a square.
  • the adjacent pixels PXL may be partitioned by a bank BN, and a planar shape of each pixel PXL may be defined by the bank BN.
  • a position and a shape of the bank BN may be properly selected to form the pixels PXL having a previously set planar shape.
  • the bank BN includes openings OP, and each opening OP exposes at least a portion of a first electrode E1 assigned to each pixel PXL.
  • the bank BN is formed as one body when viewed on the plane, but the bank BN including the plurality of openings OP exposes at least a portion of the first electrode E1 through the openings OP.
  • a light extraction member EXM is disposed on the inside of the bank BN and is positioned between the adjacent openings OP.
  • the light extraction member EXM may be formed as one body along a shape of the bank BN. For example, a light extraction member EXM between first and second pixels positioned adjacent to each other may be connected to a light extraction member EXM between third and fourth pixels positioned adjacent to each other.
  • the light extraction member EXM may be selectively disposed at a specific location, if necessary or desired. Namely, the light extraction members EXM may be spaced from each other by a predetermined distance and may be selectively disposed between the adjacent openings OP formed in a dot shape. For example, the light extraction member EXM between the adjacent first and second pixels and the light extraction member EXM between the adjacent third and fourth pixels may be spaced from each other by a predetermined distance. As another example, the light extraction member EXM between the adjacent first and second pixels may be divided into a plurality of light extraction members.
  • the embodiment of the disclosure can more efficiently improve the outcoupling efficiency.
  • the embodiments of the disclosure can easily extract light, which enters the inside of the bank and may be lost, in the orientation direction by forming the light extraction member capable of changing a light path inside the bank. Hence, the embodiments of the disclosure can greatly improve the emission efficiency and achieve the extreme luminance.
  • the embodiments of the disclosure can increase an emission region by extracting light through the light extraction member disposed inside the bank, compared to the related art. Namely, because the embodiments of the disclosure can extract light contributing to the light emission in a formation area of the bank using the light extraction member, at least a portion of the formation area of the bank may be an emission region, unlike the related art. Hence, the embodiments of the disclosure can remarkably improve an aperture ratio and a color viewing angle of the display device.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
PCT/KR2018/010353 2017-09-29 2018-09-05 LIGHT EMITTING DISPLAY DEVICE WO2019066285A2 (en)

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KR10-2017-0128231 2017-09-29
KR1020170128231A KR102496170B1 (ko) 2017-09-29 2017-09-29 전계 발광 표시장치

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CN114586164B (zh) * 2020-08-26 2023-07-14 京东方科技集团股份有限公司 显示面板、显示面板的控制方法及显示装置

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