Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67103—Apparatus for thermal treatment mainly by conduction
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
  • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
  • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
  • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
  • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
  • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67109—Apparatus for thermal treatment mainly by convection
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Definitions

• Embodiments of the present disclosure generally relate to semiconductor manufacturing equipment.
• substrates may be heated to high temperatures so various chemical and/or physical reactions can take place.
• Thermal processes are usually used to heat the substrates.
• a typical thermal process, such as annealing, requires providing a relatively large amount of thermal energy to the substrate in a short amount of time, and thereafter rapidly cooling the wafer to terminate the thermal process.
• Heated chucks are used to secure substrates in process chambers during these thermal processes.
• a certain amount of controlled contact between the chuck and substrate is required for consistent thermal uniformity, and the inventors have observed that contact areas between the heated chuck support surface and substrate are problematic and can cause damage to the side of the substrate contacting the support surface, for example when a cold substrate expands due to heating. While attempts have been made to minimize contact areas, the inventors have observed that by minimizing contact surface area, an increased force is exerted on the substrate concentrating and increasing damage to the lower surface of the substrate. The inventors have observed that this situation is even more problematic when the substrate is a softer material than the contact area, as additional damage to the back-side of the substrate may occur in the form of dents or scratches.
• the inventors have further observed that continued use of a chuck may also warp the substrate support and/or wear out the contact areas between the substrate support and the substrate.
• the inventors have observed that warpage and wear are detrimental to the integrity and planarity of the substrate.
• a substrate support includes: a support body having a first surface; one or more receptacles extending through the first surface and into the support body; and one or more protrusions respectively disposed within corresponding ones of the one or more receptacles and projecting from the first surface, wherein the one or more protrusions at least partially define a substantially planar support surface above the first surface.
• a substrate support includes: a support body having a first surface; one or more receptacles extending through the first surface and into the support body; one or more protrusions respectively disposed within corresponding ones of the one or more receptacles and projecting from the first surface, wherein the one or more protrusions at least partially define a substantially planar support surface above the first surface; and at least one channel disposed though the support body to the first surface to supply a gas or vacuum to a space defined between the first surface and a backside of a substrate when disposed on the substrate support.
• a process chamber includes: a chamber body having sidewalls and a bottom; and a substrate support disposed within the chamber body.
• the substrate support is as described in any of the embodiments disclosed herein.
• FIG. 1 schematically illustrates a cross-sectional view of a process chamber with a substrate support in accordance with some embodiments of the present disclosure.
• Figures 2A-2C schematically illustrates a cross-sectional view of a substrate support in accordance with some embodiments of the present disclosure.
• Figure 3A schematically illustrates a cross-sectional side view of an exemplary shape of a protrusion for use in a substrate support in accordance with some embodiments of the present disclosure.
• Figures 3B-3C schematically illustrate isometric views of a protrusion for use in a substrate support in accordance with some embodiments of the present disclosure.
• Figures 4A-4B schematically illustrates a cross-sectional view of a substrate support with protrusions in accordance with some embodiments of the present disclosure.
• Figure 5 schematically illustrates a top view of a vacuum chuck assembly in accordance with some embodiments of the present disclosure.
• Embodiments of the present disclosure provide improved substrate supports and processing apparatus that reduce or eliminate substrate damage along the side of the substrate that contacts the substrate support (e.g. , the backside) as compared to conventional substrate supporting apparatus.
• Embodiments of the present disclosure may advantageously avoid or reduce backside substrate damage during the manufacturing process, such as while chucking a substrate in a semiconductor process chamber, which can further limit or prevent substrate warpage and non-uniformity.
• Embodiments of the present disclosure may be used in substrate supports that contact a substrate in a process that utilizes chucking, for example, silicon wafer processing using vacuum or electrostatic chucks.
• Process chamber 100 may be any substrate processing chamber that supports a substrate during processing.
• process chamber 100 may be a semiconductor substrate processing chamber, for example, one that processes semiconductor wafers.
• the process chamber 100 may be configured to heat the supported substrate to high temperatures.
• the process chamber 100 may be an annealing chamber, which may be part of a semiconductor processing system such as those available from Applied Materials, Inc. of Santa Clara, CA, or the process chamber 100 may be a processing chamber such as those described in U.S. Patent No. 8,698,048 to Lerner, et al. entitled High Temperature Vacuum Chuck Assembly.
• Other processing chambers, including those available from other manufacturers, may also be adapted to benefit from this disclosure.
• the process chamber 100 generally includes a chamber body 101.
• the chamber body 101 has sidewalls 106, a bottom 108, and a lid 1 10 that define a process volume 1 14.
• the process volume 1 14 is typically accessed through a valve (not shown) in the sidewall 106 that facilitates movement of a substrate 120 into and out of the process volume 1 14 of the chamber body 101 .
• the sidewalls 106 and bottom 108 of the chamber body 101 are generally fabricated from a unitary block of aluminum or other material compatible with process chemistries, although other configurations including multiple piece construction may be used.
• the substrate support 102 is centrally disposed within the chamber body 101 and supports the substrate 120 during processing.
• the substrate support 102 generally includes a support body 1 16 having a first surface 1 18.
• support body 1 16 is supported by a shaft 122 that extends through the bottom 108.
• the support body 1 16 is generally circular in shape and may be fabricated from materials such as quartz, ceramics such as alumina, or metallic composition such as stainless steel, duplex stainless steel, titanium, alloy steels, tool steel compositions, and combinations thereof.
• support body 1 16 is at least partially coated with a material to reduce the coefficient of friction thereof as further described below.
• the support body 1 16 includes one or more receptacles 136 and one or more protrusions 138 disposed within the receptacles 136 and detachable therefrom or removably coupled thereto such as further described below.
• one or more receptacles 136 extend through the first surface 1 18 and into the support body 1 16.
• One or more protrusions 138 are respectively disposed within corresponding ones of the one or more receptacles 136 and project from the first surface 1 18.
• the one or more protrusions 138 at least partially define a substantially planar support surface 103 above the first surface 1 18.
• D1 represents the height of the planar support surface above first surface 1 18 and shows a gap between the planar support surface 103 and the first surface 1 18.
• the planar support surface is about 0.05 millimeters to 5 millimeters, or 0.1 millimeters to 1 millimeter, or about 0.15 millimeters above first surface 1 18.
• the planar support is above the entire first surface 1 18 of support body 1 16.
• the support body 1 16 includes at least one heating element 124 (shown in phantom).
• the heating element 124 is encapsulated within the support body 1 16.
• the heating element 124 such as an electrode or resistive heating element, is coupled to a power source 130 via electrical connector assembly 126 and controllably heats the support body 1 16 and substrate 120 positioned thereon during processing to a predetermined temperature.
• the heating element 124 is configured to heat the substrate 120 to a temperature between about 20°C and 750°C during processing.
• At least one channel 127 is disposed though the support body 1 16 to supply a gas or vacuum to a space defined between the first surface 1 18 and the backside of the substrate 120, when disposed on the substrate support.
• the at least one channel 127 may be coupled to a gas source 128 to provide a gas or to a vacuum source 129 to provide a suction force (e.g., vacuum pressure) on the substrate 120 positioned on the support body 1 16 during processing.
• Support body 1 16 may include a DC electrode 104 (shown in phantom) and additional power source 105 (shown in phantom) such as those suitable for use in an electrostatic chuck.
• Support body 1 16 may include additional elements commonly found in substrate supports for microelectronic device fabrication, such as non-limiting examples of cooling elements, RF electrode and/or backside gas provisioning, or the like. These additional elements are not shown for simplicity of description.
• the substrate 120 may be placed within the chamber body 101 (e.g., atop the substrate support).
• Substrate 120 may be, for example, a doped or undoped silicon substrate, a lll-V compound substrate, a silicon germanium (SiGe) substrate, an epi-substrate, a silicon-on-insulator (SOI) substrate, a display substrate such as a liquid crystal display (LCD), a plasma display, an electro luminescence (EL) lamp display, a light emitting diode (LED) substrate, a solar cell array, solar panel, or the like.
• the substrate 120 may be a semiconductor wafer.
• the substrate 120 is not limited to any particular size or shape.
• the substrate can be a round wafer having a 200 mm diameter, a 300 mm diameter or other diameters, such as 450 mm, among others.
• the substrate can also be any polygonal, square, rectangular, curved or otherwise non-circular workpiece, such as a polygonal glass substrate used in the fabrication of flat panel displays.
• Substrate support 102 may include embodiments of support body 1 16 as described above and includes one or more receptacles 136.
• Each receptacle 136 has one or more sidewalls 206, a bottom 208, and an opening 212 in a first surface 218 that define a receptacle volume 214.
• the sidewalls 206 and bottom 208 of one or more receptacles 136 are generally the same material as substrate support 1 16 described in Figure 1 above.
• an annular seal band 222 may be disposed atop the first surface 218 of the support body 1 16.
• the seal band 222 may be made of the same material as support body 1 16 and may be integral with the support body or coupled thereto.
• the seal band 222 has an outer diameter, inner diameter, and height such that it can support a substrate (not shown) along a peripheral edge thereof during processing.
• the height of the seal band 222 above the first surface 218 may be selected to be the same as that of the plurality of protrusions such that the seal band and the protrusions together define a substantially planar support surface (e.g., the substantially planar support surface 103, 420).
• the seal band 222 facilitates forming a seal between a substrate (e.g., 120) and the support body 1 16 such that, in some embodiments, vacuum pressure can be maintained in the region between the backside of the substrate and the support body to chuck the substrate to the support body, or in some embodiments, a backside gas can be provided to the region between the backside of the substrate and the support body for example when the substrate support is an electrostatic chuck.
• a seal band as described herein can be used in combination with any of the other embodiments disclosed herein, specifically those shown in Figures 1 , 2B-C, 3A-C, 4A-B, and 5.
• the seal band 222 may include a coating 219 disposed thereon.
• the coating 219 is of a material sufficient to reduce the coefficient of friction of the seal band 222 and optionally the first surface 218. Coating of the first surface 218 and/or seal band 222 may reduce the coefficient of friction thereof and reduce or eliminate damage to a substrate when disposed atop the substrate support.
• the entire first surface 218 may be coated as described herein.
• coating 219 exhibits sufficient structural integrity for a high lifecycle under high temperature conditions, or high compressive force conditions.
• Non- limiting examples of suitable and effective coatings includes tribological coatings such as those exhibiting high strength and low friction, as well as being resistant to many process chemicals.
• a thin-film coating 219 may be applied including carbon or a nitride compound of carbon, and may include diamond-like carbon, and/or a combination thereof.
• One specific tribological coating that is particularly suitable for this application are diamond like coatings (DLC), such as the STAR® DLC and BALI NIT® DLC provided by Balzers Oerlikon or the aDLC provided by lonbond. Other tribological coatings that exhibit these characteristics, however, can be applied.
• a tetrahedral amorphous carbon (ta-C) may be applied.
• the coating is applied to a thickness of about 0.05 pm to about 5 pm. For example, a coating of only 2 pm thickness may be applied to the seal band 222 and/or the first surface 218.
• Substrate support 102 may include threads 224 disposed in sidewall(s) 206 and extending to bottom 208 within receptacle 236 to make threaded holes. Threads 224 may be added to the receptacle by any means known in the art such as machining. Threads 224 may be made of the same material as support body 1 16 such as ceramics, alumina, or metallic composition such as stainless steel, duplex stainless steel, titanium, alloy steels, tool steel compositions, or combinations thereof. Threads 224 may be sized and spaced to connect with a mating or corresponding thread from a protrusion as described further below.
• FIG. 2C a schematic illustration of a cross-sectional view of substrate support 102 in accordance with some embodiments of the present disclosure is shown without protrusions attached thereto.
• Substrate support 102 shows receptacles 247 disposed within support body 1 16.
• the receptacle 247 has sidewalls 206, a bottom 208, and an opening 212 that define a receptacle volume 214.
• the sidewalls 206 and bottom 208 of one or more receptacles are formed at an angle with respect to the bottom 209 of the substrate support 1 16.
• a portion of support body 1 16 is able to exert a force on the one or more protrusions disposed therein (not shown) when removing a substrate from atop the protrusions without removing the protrusion from the receptacle 247.
• substrate supporting elements fabricated from a material having a hardness less than or equal to that of a substrate to be supported.
• suitable substrate supporting materials include, for example, thermostable plastic, or thermoplastic material, such as VESPEL® brand polyimide-based plastic, polyether ether ketone (PEEK), and PBI (polybenzimidazole) Celazole® brand thermoplastic.
• VESPEL® brand polyimide-based plastic polyether ether ketone (PEEK), and PBI (polybenzimidazole) Celazole® brand thermoplastic.
• PEEK polyether ether ketone
• PBI polybenzimidazole
• the elements that contact the substrate e.g., protrusions 138, 309
• the elements that contact the substrate may be entirely formed of the material.
• the elements that contact the substrate may be formed of the material in at least portions of the element that contact the substrate.
• FIGS. 3A-3C schematic illustrations of exemplary shapes of a protrusion in accordance with some embodiments of the present disclosure are shown.
• All of the protrusions 309 are formed with the same height and have planarized top surfaces to contact the backside of the substrate (not shown), and the sum of the top surface areas of the protrusions 309 is significantly smaller than the support surface 310, thereby reducing the contact area between the support surface 310 and the substrate (not shown). With the smaller contact area between the support surface 310 and the substrate (not shown), embodiments merely bring the protrusions 309 to planarity instead of planarizing the whole support surface 310.
• a nub 315 may be added to the top surface of the protrusion to further reduce the contact area.
• the height of the protrusions 309 above the first surface may be from about 25 microns to about 200 microns, for example, about 50 microns, and the width or diameter of the protrusions 312 may be from about 500 microns to about 5000 microns.
• the shape of the protrusion 309 can be such as a hemispherical-like protrusion with a planarized support surface 313 shown in figure 3A.
• protrusion 309 can be formed on a rounded rectangular foundation as shown in figure 3B or on a circular foundation as shown in figure 3C.
• the shapes, size and pattern of the protrusions described above are merely stated as examples, and the present disclosure is not limited thereto.
• the one or more protrusions 309 may include cylindrical mounds, posts, pyramids, cones, rectangular blocks, protrusions of varying sizes, any other shape that ensure the planarity of the substrate during processing.
• protrusions 309 include a threaded shaft 306 in order to be detachable from the support body 1 16.
• one or more vent holes 314 may be included to vent air from receptacle 336 during processing.
• Figures 4A-4B schematically illustrates a cross-sectional view of a substrate support with protrusions in accordance with some embodiments of the present disclosure.
• the plurality of protrusions 312 and the support body 1 16 are detachable, and respectively disposed within corresponding ones of the one or more receptacles 436 and projecting from the first surface 418.
• the one or more protrusions 312 at least partially define a substantially planar support surface 420 above the first surface 418.
• the height, D1 , of the protrusions 309 may be from about 10 microns to about 50 microns, for example, about 25 microns, and the width or diameter of the protrusions 312 may be from about 500 microns to about 5000 microns.
• One or more vent holes 414 may be included to vent air from receptacle 336 during processing.
• the plurality of protrusions 312 are formed separately and detach from or are removably coupled to the support body 1 16.
• protrusions 309 include a smooth, non-threaded shaft 306 in order to be detachable from the support body 1 16.
• the one or more protrusions 312 at least partially define a substantially planar support surface 420 above the first surface 418.
• FIG. 5 schematically illustrates a top view of a vacuum chuck assembly in accordance with embodiments of the present disclosure.
• the support body 500 has a support surface 501 for supporting substrate (not shown) thereon.
• a plurality of protrusions 508 are formed on the support surface 501 upon which the substrate may rest during processing.
• the support surface 501 is 300 mm in diameter and has between 100 and 500 protrusions, for example, between 150 and 200 protrusions that occupy approximately 10% of the back side surface area of the substrate placed thereon.
• the protrusions 508 are arranged in a substantially linear arrangement across the support surface 501 .
• the protrusions 508 are arranged in a radial pattern emanating from the center of the support surface.
• the support surface 501 is 200 mm in diameter. Although shown as circular, it should be understood that the support surface 501 may include other shapes such as squares or rectangles.
• a seal band 502 is disposed around a peripheral edge of the support surface 501 .
• the seal band 502 forms a low pressure region between the support surface 501 and the planar support surface (not shown) above the support surface 501 .
• seal band 502 is coated with a material suitable for reducing the friction coefficient thereof as described above.
• Support surface 501 may further include: one or more contact points 510 between the surface 501 and the substrate (not shown). In embodiments, the one or more contact points 510 are not coated as described above and are softer than the support surface 501 and/or the substrate.
• the support surface 501 includes a plurality of grooves 504.
• the plurality of grooves 504 are formed in a pattern for exerting suction force, for example uniform suction force, when a substrate is disposed upon the planar support surface during processing under vacuum.

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