WO2019043919A1 - 基板処理装置、半導体装置の製造方法およびプログラム - Google Patents
基板処理装置、半導体装置の製造方法およびプログラム Download PDFInfo
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- WO2019043919A1 WO2019043919A1 PCT/JP2017/031630 JP2017031630W WO2019043919A1 WO 2019043919 A1 WO2019043919 A1 WO 2019043919A1 JP 2017031630 W JP2017031630 W JP 2017031630W WO 2019043919 A1 WO2019043919 A1 WO 2019043919A1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
Definitions
- the present invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a program.
- a substrate in a processing chamber is heated using a heating device to change the composition or crystal structure in a thin film formed on the surface of the substrate.
- a modification process typified by an annealing process for repairing crystal defects and the like in the deposited thin film.
- An object of the present invention is to provide an electromagnetic wave processing technology capable of suppressing a decrease in productivity even when a substrate cooling step is provided.
- At least two processing chambers for transferring the substrate from the transfer chamber for transferring the substrate and performing predetermined processing At least two processing chambers for transferring the substrate from the transfer chamber for transferring the substrate and performing predetermined processing;
- the first space is spatially connected to the transfer chamber, is equidistant from the at least two processing chambers, and is disposed on a side wall of the transfer chamber, and supplies a purge gas for purging an internal atmosphere at a first gas flow rate.
- a cooling chamber comprising: a gas supply unit; and an exhaust unit having an exhaust pipe for exhausting the purge gas.
- FIG. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus suitably used in an embodiment of the present invention. It is the schematic block diagram which showed the processing furnace part of the substrate processing apparatus suitably used by embodiment of this invention with the longitudinal cross-sectional view. It is the longitudinal cross-sectional view which showed schematic structure of the substrate processing apparatus suitably used by embodiment of this invention by the position of a cooling chamber.
- A It is the figure typically shown about the method to convey a wafer to a cooling chamber.
- B It is the figure which showed typically the method of carrying out the wafer which cooling completed from a cooling chamber.
- the substrate processing apparatus 100 is configured as a single-wafer heat treatment apparatus for performing various heat treatments on one or a plurality of wafers, which will be described later.
- the apparatus will be described as an apparatus that performs an annealing process (modification process) using an electromagnetic wave.
- a FOUP Front Opening Unified Pod: hereinafter referred to as a pod
- a pod 110 is used as a storage container (carrier) in which a wafer 200 as a substrate is accommodated.
- the pod 110 is also used as a transfer container for transferring the wafer 200 between various substrate processing apparatuses.
- the substrate processing apparatus 100 is provided on a side of a transfer case (housing) 202 having a transfer chamber (transfer area) 203 for transferring a wafer 200 and a side wall of the transfer case 202.
- cases 102-1 and 102-2 as processing containers to be described later which have processing chambers 201-1 and 201-2 for processing the wafers 200 therein.
- a cooling case (cooling container, cooling case) 109 which forms a cooling chamber 204 described later is provided between the processing chambers 201-1 and 201-2.
- a load port unit (LP) 106 as an open / close mechanism is disposed.
- the load port unit 106 includes a housing 106 a, a stage 106 b, and an opener 106 c.
- the stage 106 b mounts the pod 110, and a pod is provided at a substrate loading / unloading opening 134 formed in front of the housing of the transfer chamber 203.
- the opener 106 c opens and closes a lid (not shown) provided on the pod 110 by the opener 106 c.
- the load port unit 106 may have a possible function of purging the inside of the pod 110 with a purge gas such as N 2 gas.
- the housing 202 has a purge gas circulation structure described later for circulating a purge gas such as N 2 in the transfer chamber 203.
- Gate valves (GV) 205-1 and 205 that open and close the processing chambers 201-1 and 202-2 on the left side (the upper side in FIG. 2) of FIG. -2 are arranged respectively.
- a transfer device 125 as a substrate transfer mechanism (substrate transfer robot) for transferring the wafer 200 is installed.
- the transfer machine 125 can horizontally rotate or linearly move each of the tweezers (arms) 125a-1 and 125a-2 as a placement unit on which the wafer 200 is placed, and the tweezers 125a-1 and 125a-2.
- a transfer device 125b and a transfer device elevator 125c that raises and lowers the transfer device 125b are included.
- the wafer 200 is loaded (charged) or unloaded (discharged) on the substrate holder 217 or the pod 110 described later by the continuous operation of the tweezers 125a-1 and 125a-2, the transfer device 125b, and the transfer device elevator 125c. It is made possible configuration.
- each of the cases 102-1 and 102-2, the processing chambers 201-1 and 201-2, and the tweezers 125a-1 and 125a-2 may simply be processed in the case 102, unless it is necessary to distinguish them.
- Room 201 described as tweezers 125a.
- a processing furnace having a substrate processing structure as shown in FIG. 3 is configured in an area A surrounded by a broken line in FIG.
- the processing furnace has a case 102 as a cavity (processing container) made of a material that reflects electromagnetic waves such as metal.
- a cap flange (closing plate) 104 made of a metal material is configured to close the upper end of the case 102 via an O-ring (not shown) as a sealing member (seal member).
- the inner space of the case 102 and the cap flange 104 is mainly configured as a processing chamber 201 for processing a substrate such as a silicon wafer.
- a reaction tube (not shown) made of quartz for transmitting an electromagnetic wave may be installed inside the case 102, or the processing container may be configured such that the inside of the reaction tube becomes a processing chamber.
- the processing chamber 201 may be configured using a case 102 whose ceiling is closed.
- a mounting table 210 is provided in the processing chamber 201, and a boat 217 as a substrate holder for holding a wafer 200 as a substrate is mounted on the top surface of the mounting table 210.
- a wafer 200 to be processed and quartz plates 101a and 101b as heat insulating plates placed vertically above and below the wafer 200 so as to sandwich the wafer 200 are held at predetermined intervals.
- a dielectric such as a dielectric which absorbs electromagnetic waves such as a silicon plate (Si plate) or a silicon carbide plate (SiC plate) and is heated.
- Susceptors also referred to as an energy conversion member, a radiation plate, and a heat equalizing plate
- 103a and 103b which indirectly heat the wafer 200 formed of a substance may be placed.
- each of the quartz plates 101a and 101b and each of the susceptors 103a and 103b are constituted by the same component, and the quartz plate 101, the susceptor 103 and the susceptor 103 are not particularly required to be described separately. It is called and explained.
- the case 102 as a processing container has, for example, a circular cross section, and is configured as a flat sealed container.
- the transport container 202 as the lower container is made of, for example, a metal material such as aluminum (Al) or stainless steel (SUS), or quartz.
- a space surrounded by the case 102 may be referred to as a processing chamber 201 or a reaction area 201 as a processing space, and a space surrounded by the conveyance container 202 may be referred to as a conveyance chamber 203 or a conveyance area 203 as a conveyance space.
- the processing chamber 201 and the transfer chamber 203 are not limited to be horizontally adjacent as in the present embodiment, but may be vertically adjacent and configured to move a substrate holder having a predetermined structure up and down. Good.
- the substrate loading / unloading port 206 adjacent to the gate valve 205 is provided on the side surface of the transfer container 202, and the wafer 200 is processed through the substrate loading / unloading port 206. It moves between the chamber 201 and the transfer chamber 203.
- a choke structure having a length of 1 ⁇ 4 wavelength of the electromagnetic wave used is provided around the gate valve 205 or the substrate loading / unloading port 206 as a measure against the electromagnetic wave leakage described later.
- An electromagnetic wave supply unit as a heating device, which will be described in detail later, is installed on the side surface of the case 102.
- An electromagnetic wave such as a microwave supplied from the electromagnetic wave supply unit is introduced into the processing chamber 201 to heat the wafer 200 and the like. , Process the wafer 200.
- the mounting table 210 is supported by a shaft 255 as a rotation axis.
- the shaft 255 penetrates the bottom of the transfer container 202, and is further connected to a drive mechanism 267 that performs a rotation operation outside the transfer container 202.
- the periphery of the lower end portion of the shaft 255 is covered with a bellows 212, and the inside of the processing chamber 201 and the transfer area 203 is kept airtight.
- the mounting table 210 is moved up or down by the drive mechanism 267 so that the wafer 200 is at the wafer transfer position when the wafer 200 is transferred. May be configured to ascend or descend to the processing position (wafer processing position) in the processing chamber 201.
- An exhaust unit that exhausts the atmosphere of the processing chamber 201 is provided below the processing chamber 201 and on the outer peripheral side of the mounting table 210. As shown in FIG. 1, an exhaust port 221 is provided in the exhaust part. An exhaust pipe 231 is connected to the exhaust port 221, and a pressure regulator 244 such as an APC valve that controls the valve opening degree according to the pressure in the processing chamber 201 and a vacuum pump 246 are connected in series to the exhaust pipe 231. It is connected to the.
- the pressure regulator 244 is not limited to the APC valve as long as it can adjust the exhaust amount by receiving the pressure information (feedback signal from the pressure sensor 245 described later) in the processing chamber 201 and not limited to the APC valve. It may be comprised so that the on-off valve and pressure regulation valve may be used together.
- An exhaust portion (also referred to as an exhaust system or an exhaust line) is mainly configured by the exhaust port 221, the exhaust pipe 231, and the pressure regulator 244.
- An exhaust port may be provided to surround the mounting table 210 so that gas can be exhausted from the entire periphery of the wafer 200.
- a vacuum pump 246 may be added to the configuration of the exhaust unit.
- the cap flange 104 is provided with a gas supply pipe 232 for supplying a processing gas for processing various substrates such as an inert gas, a source gas, and a reaction gas into the processing chamber 201.
- a mass flow controller (MFC) 241 which is a flow rate controller (flow rate control unit) and a valve 243 which is an on-off valve are provided in the gas supply pipe 232 sequentially from the upstream side.
- MFC mass flow controller
- N 2 nitrogen
- the gas is provided with an MFC that is a flow rate controller and a valve that is an on-off valve sequentially from the upstream side downstream of the valve 243 of the gas supply pipe 232
- Plural kinds of gases can be supplied by using the configuration in which the supply pipe is connected.
- An MFC and a gas supply pipe provided with a valve may be installed for each gas type.
- a gas supply system (gas supply unit) is mainly configured by the gas supply pipe 232, the MFC 241, and the valve 243.
- an inert gas When an inert gas is allowed to flow through the gas supply system, it is also referred to as an inert gas supply system.
- the inert gas in addition to N 2 gas, for example, rare gas such as Ar gas, He gas, Ne gas, Xe gas and the like can be used.
- the cap flange 104 is provided with a temperature sensor 263 as a noncontact temperature measuring device.
- a temperature sensor 263 is configured of a radiation thermometer such as an infrared (IR) sensor, for example.
- the temperature sensor 263 is installed to measure the surface temperature of the quartz plate 101 a or the surface temperature of the wafer 200. When the susceptor as the heating element described above is provided, the surface temperature of the susceptor may be measured.
- the temperature of the wafer converted by temperature conversion data described later that is, the estimated wafer temperature means the temperature sensor 263.
- the case is meant where the temperature obtained by directly measuring the temperature of the wafer 200 is meant, and the case where both are meant.
- the temperature correlation between the temperature of the quartz plate 101 or the susceptor 103 and the temperature of the wafer 200 is obtained by acquiring the transition of the temperature change in advance for each of the quartz plate 101 or the susceptor 103 and the wafer 200 by the temperature sensor 263.
- the conversion data may be stored in the storage device 121c or the external storage device 123.
- the temperature of the wafer 200 can be estimated by measuring only the temperature of the quartz plate 101, thereby making it possible to estimate the temperature of the wafer 200, based on the estimated temperature of the wafer 200. It is possible to control the output of the microwave oscillator 655, that is, the heating device.
- thermocouple As a means to measure the temperature of a board
- the temperature sensor 263 may be provided not only on the cap flange 104 but also on the mounting table 210. Further, the temperature sensor 263 is not only installed directly on the cap flange 104 or the mounting table 210, but indirectly reflects light emitted from a measurement window provided on the cap flange 104 or the mounting table 210 by a mirror or the like. It may be configured to Furthermore, the temperature sensor 263 is not limited to one, and a plurality of temperature sensors may be installed.
- Electromagnetic wave introduction ports 653-1 and 653-2 are provided on the side wall of the case 102.
- One end of each of waveguides 654-1 and 654-2 for supplying an electromagnetic wave (microwave) into the processing chamber 201 is connected to each of the electromagnetic wave introduction ports 653-1 and 653-2.
- microwave oscillators (electromagnetic wave sources) 655-1 and 655-2 are connected to the other end of each of the waveguides 654-1 and 654-2 as heating sources for supplying electromagnetic waves into the processing chamber 201 and heating them.
- the microwave oscillators 655-1 and 655-2 supply electromagnetic waves such as microwaves to the waveguides 654-1 and 654-2, respectively.
- microwave oscillators 655-1 and 655-2 a magnetron, a klystron, or the like is used.
- the electromagnetic wave introduction ports 653-1, 653-2, the waveguides 654-1, 654-2, and the microwave oscillators 655-1, 655-2 do not need to be particularly described separately.
- the electromagnetic wave introduction port 653, the waveguide 654, and the microwave oscillator 655 will be described and described.
- the frequency of the electromagnetic wave generated by the microwave oscillator 655 is preferably controlled to be in the frequency range of 13.56 MHz to 24.125 GHz. More preferably, the frequency is controlled to be 2.45 GHz or 5.8 GHz.
- the respective frequencies of the microwave oscillators 655-1 and 655-2 may be the same frequency or may be installed at different frequencies.
- two microwave oscillators 655 are described as being disposed on the side surface of the case 102, the present invention is not limited thereto, and one or more microwave oscillators 655 may be provided.
- An electromagnetic wave supply unit (electromagnetic wave supply apparatus, microwaves) as a heating apparatus mainly by the microwave oscillators 655-1, 655-2, the waveguides 654-1, 654-2 and the electromagnetic wave introduction ports 653-1, 653-2.
- the supply unit also referred to as a microwave supply device) is configured.
- a controller 121 described later is connected to each of the microwave oscillators 655-1 and 655-2.
- the controller 121 is connected to a quartz plate 101 a or 101 b accommodated in the processing chamber 201 or a temperature sensor 263 for measuring the temperature of the wafer 200.
- the temperature sensor 263 measures the temperature of the quartz plate 101 or the wafer 200 by the above-mentioned method and transmits it to the controller 121, and the controller 121 controls the outputs of the microwave oscillators 655-1 and 655-2, Control the heating.
- a method of controlling the heating of the wafer 200 by controlling a voltage input to the microwave oscillator 655, and a time and a time when the power of the microwave oscillator 655 is turned on are turned off.
- a method of controlling the heating of the wafer 200 or the like can be used by changing the ratio of time.
- the microwave oscillators 655-1 and 655-2 are controlled by the same control signal transmitted from the controller 121.
- the invention is not limited thereto, and the microwave oscillators 655-1 and 655-2 can be individually controlled by transmitting individual control signals from the controller 121 to the microwave oscillators 655-1 and 655-2, respectively. You may
- a position on the side of the transfer chamber 203 which is approximately equidistant from the processing chambers 201-1 and 201-2 between the processing chambers 201-1 and 201-2, specifically Specifically, a cooling chamber as a cooling area for cooling the wafer 200 on which predetermined substrate processing has been performed such that the transfer distances from the substrate loading / unloading port 206 of the processing chambers 201-1 and 201-2 are substantially the same.
- a cooling case also referred to as a cooling area or a cooling unit
- a wafer cooling placement tool (also referred to as a cooling stage, hereinafter referred to as CS) 108 having the same structure as the boat 217 as a substrate holder is provided.
- the CS 108 is configured to be able to horizontally hold a plurality of wafers 200 in a vertically multistage manner by a plurality of wafer holding grooves 107a to 107d, as shown in FIG. 5 described later.
- an inert gas as a purge gas (purge gas for cooling chamber) for purging the atmosphere in the cooling chamber 204 via the gas supply piping (gas supply piping for cooling chamber) 404 is predetermined.
- a gas supply nozzle (cooling chamber gas supply nozzle) 401 is provided as a cooling chamber purge gas supply unit that supplies a gas flow rate of 1.
- the gas supply nozzle 401 may be an open nozzle whose nozzle end is opened, and preferably, a porous nozzle in which a plurality of gas supply ports are provided on the nozzle side wall facing the CS 108 side is preferable. Further, a plurality of gas supply nozzles 401 may be provided.
- the purge gas supplied from the gas supply nozzle 401 may be used as a cooling gas for cooling the processed wafer 200 placed on the CS 108.
- An exhaust pipe 407 as a pipe is provided.
- the exhaust pipe 407 downstream of the on-off valve 406 may be provided with a cooling chamber vacuum pump (not shown) for actively exhausting the atmosphere in the cooling chamber 204.
- the exhaust pipe 407 may be connected and circulated to a purge gas circulation structure for circulating an atmosphere in the transfer chamber 203 described later.
- the exhaust pipe 407 is preferably connected to a circulation path 168A shown in FIG. 6 described later, and more preferably connected to an upstream position downstream of the circulation path 168A and immediately before the clean unit 166 Is preferred.
- the cooling case 109 is provided with a pressure sensor for cooling room (pressure gauge for cooling room) 408 for detecting the pressure in the cooling room 204, and is detected by the pressure sensor for conveyance room (pressure gauge for conveyance room) 180.
- the controller 121 described later controls the MFC 403 as the cooling chamber MFC and the valve 402 as the cooling chamber valve so that the pressure in the transfer chamber and the differential pressure in the cooling chamber 204 become constant, and supplies the purge gas.
- the supply stop is performed, and the open / close valve 405 and the vacuum pump for the cooling chamber are controlled to control the exhaust or stop of the purge gas.
- pressure control in the cooling chamber 204 and temperature control of the wafer 200 placed on the CS 108 are performed.
- a gas supply system (first gas supply unit) for a cooling chamber is mainly configured by the gas supply nozzle 401, the valve 402, the MFC 403, and the gas supply pipe 404, and mainly the exhaust port 405, the on-off valve 406, and the exhaust.
- the pipe 407 constitutes a cooling chamber gas exhaust system (cooling chamber gas exhaust unit).
- the cooling chamber gas exhaust system may include a cooling chamber vacuum pump.
- a temperature sensor (not shown) for measuring the temperature of the wafer 200 placed on the CS 108 may be provided in the cooling chamber 204.
- each of the wafer holding grooves 107a to 107d is simply described as a wafer holding groove 107 unless it is necessary to distinguish and explain.
- the transfer chamber 203 supplies purge gas as inert gas or air (fresh air) into the duct formed around the transfer chamber 203 at a predetermined second gas flow rate.
- a supply mechanism (second gas supply unit) 162 and a pressure control mechanism 150 for controlling the pressure in the transfer chamber 203 are provided.
- the purge gas supply mechanism 162 is configured to supply a purge gas into the duct in accordance with a value detected by the detector 160 that mainly detects the oxygen concentration in the transfer chamber 203.
- the detector 160 is installed above (upstream of) a clean unit 166 as a gas supply mechanism that removes dust and impurities and supplies a purge gas into the transfer chamber 203.
- the clean unit 166 is composed of a filter for removing dust and impurities and a fan for blowing the purge gas.
- the purge gas supply mechanism 162 and the pressure control mechanism 150 can control the oxygen concentration in the transfer chamber 203.
- the detector 160 may be configured to be able to detect the water concentration in addition to the oxygen concentration.
- the pressure control mechanism 150 is configured by an adjustment damper 154 configured to maintain the inside of the transfer chamber 203 at a predetermined pressure, and an exhaust damper 156 configured to fully open or fully close the exhaust path 152.
- the adjustment damper 154 includes an auto damper (back pressure valve) 151 configured to open when the pressure in the transfer chamber 203 becomes higher than a predetermined pressure, and a press damper 153 configured to control opening and closing of the auto damper 151. It consists of By controlling the opening and closing of the adjustment damper 154 and the exhaust damper 156 as described above, the inside of the transfer chamber 203 can be controlled to an arbitrary pressure.
- clean units 166 are disposed one by one on the left and right in the ceiling portion of the transfer chamber 203.
- a porous plate 174 which is a straightening plate which regulates the flow of the purge gas, is installed.
- the perforated plate 174 has a plurality of holes, and is formed of, for example, a punching panel.
- the first space 170 which is a wafer transfer area is formed in the space between the ceiling and the porous plate 174, and the space between the porous plate 174 and the floor surface of the transfer chamber 203 is a gas exhaust area.
- a second space 176 is formed.
- suction units 164 for circulating and exhausting the purge gas flowing in the transfer chamber 203 are disposed one by one on the left and right sides of the transfer machine 125.
- a path as a circulation path and an exhaust path connecting the pair of left and right suction portions 164 and the pair of left and right filter units 166, respectively. 168 is formed in the wall surface of the housing 202.
- a cooling mechanism (radiator) (not shown) for cooling the fluid in the passage 168, it is possible to control the temperature of the circulating purge gas.
- the path 168 is branched into two paths of a circulation path 168A, which is a circulation path, and an exhaust path 168B.
- the circulation path 168A is a flow path connected to the upstream side of the clean unit 166 and supplying purge gas into the transfer chamber 203 again.
- the exhaust path 168 B is a flow path connected to the pressure control mechanism 150 and exhausts the purge gas, and the exhaust paths 168 B provided on the left and right of the housing 202 are merged into one external exhaust path 152 downstream.
- FIG. 6 schematically show the flow of the purge gas supplied from the purge gas supply mechanism 162.
- N 2 gas inert gas
- the N 2 gas is supplied from the ceiling of the transfer chamber 203 into the transfer chamber 203 through the clean unit 166.
- a downflow 111 is formed in 203.
- a porous plate 174 is provided in the transfer chamber 203, and a space in the transfer chamber 203 is mainly a first space 170 which is a region to which the wafer 200 is transferred, and a second space 176 in which particles are easily sedimented.
- the first space 170 and the second space 176 form a pressure difference between the first space 170 and the second space 176. At this time, the pressure in the first space 170 is higher than the pressure in the second space 176. With such a configuration, it is possible to suppress scattering of particles generated from the driving unit such as the transfer machine elevator 125c below the tweezers 125a into the wafer transfer area. Further, the particles on the floor surface of the transfer chamber 203 can be suppressed from being rolled up to the first space 170.
- the N 2 gas supplied to the second space 176 by the downflow 111 is sucked out of the transfer chamber 203 by the suction unit 164.
- the N 2 gas sucked out of the transfer chamber 203 is divided into two flow paths of a circulation path 168 A and an exhaust path 168 B downstream of the suction portion 164.
- the N 2 gas introduced into the circulation path 168 A flows above the housing 202 and is circulated in the transfer chamber 203 via the clean unit 166. Further, the N 2 gas introduced into the exhaust passage 168 B flows to the lower side of the housing 202 and is exhausted to the outside from the external exhaust passage 152.
- a fan 178 as a blower for promoting the circulation of the N 2 gas may be installed in the left and right suction parts 164.
- the flow of N 2 gas can be improved, and it becomes easy to form a circulating air flow.
- uniform air flow can be formed in the transfer chamber 203 by performing circulation and exhaust separately in the left and right two systems.
- whether or not the N 2 gas is circulated in the transfer chamber 203 may be enabled by controlling the opening and closing of the adjustment damper 154 and the exhaust damper 156. That is, when circulating N 2 gas in the transfer chamber 203, the automatic damper 151 and the press damper 153 are opened, and the exhaust damper 156 is closed to facilitate formation of a circulating air flow into the transfer chamber 203. It may be configured as follows. In this case, the N 2 gas introduced into the exhaust passage 168B may be retained in the exhaust passage 168B or may be configured to flow into the circulation passage 168A.
- the pressure in the pod 110, the pressure in the transfer chamber 203, the pressure in the processing chamber 201, and the pressure in the cooling chamber 204 are all atmospheric pressure or about 10 Pa to 200 Pa (gauge pressure) higher than atmospheric pressure.
- the respective components are controlled by the controller 121 at a high pressure of Note that the pressure in the transfer chamber 203 is higher than the pressure in the processing chamber 201 and the cooling chamber 204 in each of the in-furnace pressure / temperature adjustment step S 803, the inert gas supply step S 804, and the reforming step S 805 described later.
- the transfer chamber It is preferable that the pressure in the chamber 203 be controlled to be lower than the pressure in the process chamber 201 and higher than the pressure in the cooling chamber 204.
- the controller 121 which is a control unit (control device or control means), includes a central processing unit (CPU) 121a, a random access memory (RAM) 121b, a storage device 121c, and an I / O port 121d. It is configured as a computer.
- the RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via the internal bus 121e.
- An input / output device 122 configured as, for example, a touch panel or the like is connected to the controller 121.
- the storage device 121 c is configured by, for example, a flash memory, a hard disk drive (HDD), or the like.
- a control program for controlling the operation of the substrate processing apparatus and a process recipe in which the procedure (conditions) and the like of the annealing (reforming) process are stored are readably stored.
- the process recipe is a combination of processes so as to cause the controller 121 to execute each procedure in the substrate processing process described later and obtain a predetermined result, and functions as a program.
- the process recipe, the control program and the like are collectively referred to simply as a program.
- the process recipe is simply referred to as a recipe.
- the RAM 121 b is configured as a memory area (work area) in which programs and data read by the CPU 121 a are temporarily stored.
- the I / O port 121d is connected to the MFC 241, the valve 243, the pressure sensor 245, the APC valve 244, the vacuum pump 246, the temperature sensor 263, the drive mechanism 267, the microwave oscillator 655 and the like described above.
- the CPU 121a is configured to read out and execute the control program from the storage device 121c, and to read out the recipe from the storage device 121c in response to the input of the operation command from the input / output device 122 or the like.
- the CPU 121a adjusts the flow rate of various gases by the MFC 241, opens and closes the valve 243, adjusts the pressure by the APC valve 244 based on the pressure sensor 245, starts and stops the vacuum pump 246, and temperature according to the contents of the read recipe.
- the output adjustment operation of the microwave oscillator 655 based on the sensor 263, the rotation and rotational speed adjustment operation of the mounting table 210 (or the boat 217) by the drive mechanism 267, or the elevation operation is controlled.
- the controller 121 installs the above-described program stored in an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory) 123 in a computer Can be configured by
- the storage device 121 c and the external storage device 123 are configured as computer readable recording media. Hereinafter, these are collectively referred to simply as recording media.
- recording medium when only the storage device 121c is included, only the external storage device 123 may be included, or both of them may be included.
- the program may be provided to the computer using communication means such as the Internet or a dedicated line without using the external storage device 123.
- wafer when used in the present specification, it may mean the wafer itself or a laminate of the wafer and a predetermined layer or film formed on the surface thereof.
- surface of wafer when used in the present specification, it may mean the surface of the wafer itself or the surface of a predetermined layer or the like formed on the wafer.
- the phrase “forming a predetermined layer on the wafer” means that the predetermined layer is directly formed on the surface of the wafer itself, or a layer formed on the wafer, etc. It may mean forming a predetermined layer on top of.
- substrate in this specification is also synonymous with the use of the word "wafer”.
- the transfer machine 125 takes out a predetermined number of wafers 200 to be processed from the pod 110 opened by the load port unit 106, and either one or both of the tweezers 125a-1 and 125a-2 or both.
- the wafer 200 is placed on the
- Substrate loading process (S802) As shown in FIG. 3, the wafer 200 placed on one or both of the tweezers 125a-1 and 125a-2 is loaded (boat loading) into a predetermined processing chamber 201 by the opening and closing operation of the gate valve 205. (S802).
- the electromagnetic wave supply unit When raising the temperature to a predetermined substrate processing temperature by the electromagnetic wave supply unit, it is preferable to raise the temperature with an output smaller than the output of the modification process described later so that the wafer 200 is not deformed or damaged.
- the pressure in the furnace may not be adjusted, and only the temperature in the furnace may be adjusted, and then control may be performed to shift to an inert gas supply step S804 described later.
- the microwave oscillator 655 supplies microwaves into the processing chamber 201 through the above-described components.
- the wafer 200 is heated to a temperature of 100 ° C. to 1000 ° C., preferably 400 ° C. to 900 ° C., more preferably Heating to a temperature of 500 ° C. or more and 700 ° C. or less.
- the substrate 200 can be processed at a temperature at which the wafer 200 efficiently absorbs the microwave, and the speed of the modification processing can be improved.
- the temperature of the wafer 200 is processed at a temperature lower than 100 ° C. or higher than 1000 ° C., the surface of the wafer 200 is altered and it becomes difficult to absorb the microwaves. This makes it difficult to heat the wafer 200. Therefore, it is desirable to perform substrate processing in the above-described temperature range.
- a standing wave is generated in the processing chamber 201, and the wafer 200 (susceptor 103 is also the same as the wafer 200 when the susceptor 103 is mounted).
- the heating concentration area (hot spot) and the other non-heating area (non-heating area) that are locally heated are generated, and the wafer 103 (the susceptor 103 is also the same as the wafer 200 when the susceptor 103 is mounted).
- the generation of a hot spot on the wafer 200 is suppressed by controlling the power ON / OFF of the electromagnetic wave supply unit.
- the temperature sensor 263 is a non-contact temperature sensor, and deformation or breakage is caused on the wafer 200 to be measured (the susceptor 103 is also the same as the wafer 200 when the susceptor 103 is placed). Since the position of the wafer 200 monitored by the temperature sensor and the measurement angle with respect to the wafer 200 change, the measured value (monitored value) becomes inaccurate and the measured temperature changes rapidly. In the present embodiment, the rapid change of the measurement temperature of the radiation thermometer due to such deformation or breakage of the measurement object is used as a trigger for turning on / off the electromagnetic wave supply unit.
- the wafer 200 is heated, and the amorphous silicon film formed on the surface of the wafer 200 is reformed (crystallized) into a polysilicon film (S805). That is, the wafer 200 can be reformed uniformly.
- the wafer 200 is controlled not to turn off the microwave oscillator 655 but to lower the output of the microwave oscillator 655.
- the temperature of may be a temperature within a predetermined range. In this case, when the temperature of the wafer 200 returns to the temperature within the predetermined range, the output of the microwave oscillator 655 is controlled to be high.
- the wafer 200 unloaded by the tweezers 125a is moved to the cooling chamber 204 by the continuous operation of the transfer device 125b and the transfer device elevator 125c, and is mounted on the CS 108 by the tweezers 125a.
- the wafer 200a after the modification processing S805 held by the tweezers 125a-1 is transferred to the wafer holding groove 107b provided in the CS 108, and placed for a predetermined time.
- the wafer 200a is cooled (S807).
- the wafer 200a after the completion of the modification process S805 is held in the wafer holding groove 107b.
- the tweezers 125a-1 after being placed on the substrate or other free tweezers (eg, the tweezers 125a-2) transport the cooled wafer 200b to the load port, ie, the pod 110.
- the wafer 200 cooled in the substrate cooling step S 807 is unloaded from the CS 108 by the tweezers 125 a and transferred to a predetermined pod 110 (S 808).
- the wafer 200 is reformed, and the process proceeds to the next substrate processing step.
- the configuration has been described in which the substrate processing is performed by placing two wafers 200 on the boat 217, the present invention is not limited to this, and the boat installed in each of the processing chambers 201-1 and 201-2 Alternatively, the same process may be performed by placing the wafers one by one at 217, and by performing the swap process, the wafers 200 may be processed two by two in the process chambers 201-1 and 201-2. May be At this time, the transfer destination of the wafer 200 may be controlled so that the numbers of substrate processing performed in the processing chambers 201-1 and 201-2 coincide with each other.
- the number of times the substrate processing is performed in each of the processing chambers 201-1 and 201-2 becomes constant, and maintenance work such as maintenance can be efficiently performed.
- the transfer destination of the next wafer 200 is controlled to be the processing chamber 201-2, thereby controlling the processing chambers 201-1, 201-.
- the number of times of substrate processing in 2 can be controlled.
- the tweezers 125a-1 and 125a-2 are respectively a high temperature tweezer for transporting the wafer 200 which has become high temperature by the substrate processing and a low temperature tweezer for transporting the wafer 200 at a temperature other than the high temperature. May be provided.
- the wafer 200 which has become high temperature in the reforming step S805 is transferred to the cooling chamber 204 only by the tweezers 125a-1
- the tweezers 125a-2 may be controlled to transfer the wafer 200.
- the flow rate of the purge gas supplied into the transfer chamber 203 is preferably 100 slm or more and 2000 slm or less. If gas is supplied at a flow rate smaller than 100 slm, it becomes difficult to purge the inside of the transfer chamber 203 completely, and impurities and byproducts will remain in the transfer chamber 203. Further, if the gas supply is performed at a flow rate larger than 2000 slm, the wafer 200 placed at a predetermined position may be displaced when the transfer machine 125 transports the wafer 200, or the transfer chamber housing It causes turbulence such as vortices in the corners of the body 202 and the like, and causes rolling up of impurities such as particles.
- the flow rate of the purge gas supplied into the cooling chamber 204 is preferably 10 slm or more and 800 slm or less. If gas is supplied at a flow rate smaller than 10 slm, it becomes difficult to purge the inside of the cooling chamber 204 completely, and impurities and byproducts will remain in the transfer chamber 203.
- the wafer 200 placed at a predetermined position may be displaced when the transfer machine 125 transports the wafer 200, or the cooling chamber case It causes turbulence such as vortices in the corner portions of 109, etc., and causes an impurity such as particles to be wound up.
- the pressure value in the transfer chamber 203 detected by the transfer chamber pressure sensor 180 is detected by the cooling chamber pressure sensor 407. It is preferable to control so that it always becomes higher than the pressure value in the cooling chamber 204. That is, it is preferable that the pressure in the transfer chamber 203 be controlled to be higher than the pressure in the cooling chamber 204. At this time, by controlling the pressure difference between the transfer chamber 203 and the cooling chamber 204 to be greater than 0 Pa and 100 Pa or less, the pressure in the cooling chamber 204 affects the purge gas flow in the transfer chamber 203. It is possible to minimize.
- the pressure difference between the transfer chamber 203 and the cooling chamber 204 is 0 Pa
- the pressure difference between the transfer chamber 203 and the cooling chamber 204 disappears, and the purge gas supplied to the cooling chamber flows back to the transfer chamber 203 and the transfer chamber 203 Changes will occur in the gas flow inside.
- the pressure difference between the transfer chamber 203 and the cooling chamber 204 becomes larger than 100 Pa
- the purge gas supplied to the transfer chamber 203 will flow into the cooling chamber 204 more than necessary, and the transfer chamber 203 There will be a big change in the gas flow inside.
- the pressure difference between the transfer chamber 203 and the cooling chamber 204 is controlled to 10 Pa
- the gate valve 205 disposed in the processing chamber 201 is closed, for example, while performing the in-furnace pressure / temperature adjustment step S803 to the reforming step S805 in the substrate processing step.
- the on-off valve 406 is closed so that the pressure in the transfer chamber 203 is 50 Pa and the pressure in the cooling chamber 204 is 40 Pa, and the gas flow rate supplied from the gas supply nozzle 401 into the cooling chamber 204 Controls the MFC 403 so as to achieve 100 slm (STEP 1).
- the substrate unloading step S806, for example, is performed, and the gate valve 205 disposed in the processing chamber 201 is opened, so that the pressure in the transfer chamber 203 is reduced to 40 Pa.
- Pressure sensor 180 detects (STEP 2).
- the controller 121 opens the on-off valve 405 and controls the pressure in the cooling chamber 204 to decrease (STEP 3). At this time, the gate valve 205 is maintained in the open state.
- the gate valve 205 is closed.
- the controller 121 closes the on-off valve, and controls so that the pressure difference between the transfer chamber 203 and the cooling chamber 204 maintains a predetermined value (STEP 4).
- the gate valve 205 disposed in the processing chamber 201 is closed, for example, while performing the in-furnace pressure / temperature adjustment step S803 to the reforming step S805 in the substrate processing step.
- the on-off valve 406 is closed so that the pressure in the transfer chamber 203 is 50 Pa and the pressure in the cooling chamber 204 is 40 Pa, and the gas flow rate supplied from the gas supply nozzle 401 into the cooling chamber 204
- the MFC 403 is controlled so as to be 100 slm (STEP 5).
- control of each part in this state is the same as the description of STEP 1 performed in FIG. 9 (A).
- the controller 121 increases the flow rate of the gas supplied from the gas supply nozzle 401 into the cooling chamber to 150 slm while keeping the open / close valve 406 closed.
- the MFC 403 is controlled to increase the pressure in the cooling chamber 204 (STEP 7).
- the controller 121 closes the on-off valve and controls the pressure difference between the transfer chamber 203 and the cooling chamber 204 to maintain a predetermined value (STEP 8) .
- the pressure in the cooling chamber 204 is appropriately adjusted to transfer the transfer chamber 203 and the cooling chamber. It becomes possible to maintain a constant pressure difference with 204, and it is possible to suppress the decrease in film quality and the decrease in throughput without disturbing the gas flow in the transfer chamber 203.
- the structure in which the gate valve for spatially separating the transfer chamber 203 and the cooling chamber 204 is not described, but the present invention is not limited thereto. Even in the case of installing a gate valve that spatially separates from 204, the pressure control in the cooling chamber described above may be performed. Further, a refrigerant pipe 409 through which the refrigerant flows may be provided on the side wall surface of the cooling chamber 204 to improve the cooling efficiency.
- the purge gas By supplying the purge gas into the cooling chamber, the purge gas can function as a cooling gas, and the processed wafer can be efficiently cooled.
- the process of modifying an amorphous silicon film into a polysilicon film as a film containing silicon as a main component has been described, but the invention is not limited to this, and oxygen (O), nitrogen (N), A film containing at least one or more of carbon (C) and hydrogen (H) may be supplied to reform the film formed on the surface of the wafer 200.
- oxygen O
- nitrogen N
- a film containing at least one or more of carbon (C) and hydrogen (H) may be supplied to reform the film formed on the surface of the wafer 200.
- a hafnium oxide film (HfxOy film) as a high dielectric film is formed on the wafer 200
- the inside of the hafnium oxide film is supplied by supplying a microwave while supplying a gas containing oxygen and heating it.
- the defective oxygen can be supplemented to improve the characteristics of the high dielectric film.
- the hafnium oxide film is described here, the present invention is not limited thereto.
- the above-described film forming sequence is performed on the wafer 200 using TiOCN film, TiOC film, TiON film, TiO film, ZrOCN film, ZrOC film, ZrON film, ZrO film, HfOCN film, HfOC film, HfON film, HfO film, TaOCN film, TaOC film, TaON film, TaO film, NbOCN film, NbOC film, NbON film, NbO film, NbO film, AlOCN film, AlOC film, AlON film, AlO film, AlO film, MoOCN film, MoOC film, MoON film, MoO film, WOCN film Even when the WOC film, the WON film, and the WO film are modified, the present invention can be suitably applied.
- a film containing silicon doped with impurities as a main component may be heated.
- a film mainly composed of silicon a silicon nitride film (SiN film), a silicon oxide film (SiO film), a silicon oxycarbonized film (SiOC film), a silicon oxycarbonitride film (SiOCN film), a silicon oxynitride film (SiON) Si-based oxide film such as film).
- the impurities include, for example, at least one or more of bromine (B), carbon (C), nitrogen (N), aluminum (Al), phosphorus (P), gallium (Ga), arsenic (As) and the like.
- it may be a resist film based on at least one of a methyl methacrylate resin (Polymethyl methacrylate: PMMA), an epoxy resin, a novolac resin, and a polyvinylphenyl resin.
- a methyl methacrylate resin Polymethyl methacrylate: PMMA
- PMMA Polymethyl methacrylate
- epoxy resin epoxy resin
- novolac resin novolac resin
- polyvinylphenyl resin polyvinylphenyl resin
- the patterning process of the manufacturing process of the liquid crystal panel, the patterning process of the manufacturing process of the solar cell, and the patterning process of the manufacturing process of the power device are not limited thereto. It is applicable also to the technology which processes a substrate, such as.
- 200 wafer (substrate), 201: processing chamber, 203: transfer chamber, 204: cooling chamber, 401: gas supply nozzle (cooling chamber purge gas supply unit, cooling chamber gas supply Nozzles, 402: Valve (cooling chamber valve) 403: MFC (cooling chamber MFC) 404: Gas supply piping (cooling chamber gas supply piping) 405: Exhaust port 406 ... on-off valve (cooling chamber exhaust valve, APC valve), 407 ... exhaust piping (cooling chamber exhaust piping).
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Abstract
Description
基板を搬送する搬送室から前記基板が搬送されて所定の処理を行う少なくとも2つの処理室と、
前記搬送室と空間的に連結され、前記少なくとも2つの処理室から等距離であって前記搬送室の側壁に配置され、内部の雰囲気をパージするパージガスを第1のガス流量にて供給する第1のガス供給部と、前記パージガスを排気する排気配管を有する排気部とを備えた冷却室と、
を有する技術が提供される。
以下に本発明の一実施形態を図面に基づいて説明する。
本実施の形態において、本発明に係る基板処理装置100は、1枚または複数枚のウエハに各種の熱処理を施す枚葉式熱処理装置として構成されており、後述する電磁波を用いたアニール処理(改質処理)を行う装置として説明を行う。本実施形態における基板処理装置100では、基板としてのウエハ200を内部に収容した収納容器(キャリア)としてFOUP(Front Opening Unified Pod:以下、ポッドと称する)110が使用される。ポッド110は、ウエハ200を種々の基板処理装置間を搬送する為の搬送容器としても用いられる。
図1の破線で囲まれた領域Aには、図3に示すような基板処理構造を有する処理炉が構成される。図2に示すように、本実施形態においては処理炉が複数設けられているが、処理炉の構成は同一である為、一つの構成を説明するに留め、他方の処理炉構成の説明は省略する。
図3に示すように、処理炉は、金属などの電磁波を反射する材料で構成されるキャビティ(処理容器)としてのケース102を有している。また、金属材料で構成されたキャップフランジ(閉塞板)104が、封止部材(シール部材)としてのOリング(図示せず)を介してケース102の上端を閉塞するように構成する。主にケース102とキャップフランジ104の内側空間をシリコンウエハ等の基板を処理する処理室201として構成している。ケース102の内部に電磁波を透過させる石英製の図示しない反応管を設置してもよく、反応管内部が処理室となるように処理容器を構成してもよい。また、キャップフランジ104を設けずに、天井が閉塞したケース102を用いて処理室201を構成するようにしてもよい。
ここで、載置台210は基板搬入搬出口206の高さに応じて、駆動機構267によって、ウエハ200の搬送時にはウエハ200がウエハ搬送位置となるよう上昇または下降し、ウエハ200の処理時にはウエハ200が処理室201内の処理位置(ウエハ処理位置)まで上昇または下降するよう構成されていてもよい。
ここで、圧力調整器244は、処理室201内の圧力情報(後述する圧力センサ245からのフィードバック信号)を受信して排気量を調整することができるものであればAPCバルブに限らず、通常の開閉バルブと圧力調整弁を併用するように構成されていてもよい。
ガス供給管232には、上流から順に、流量制御器(流量制御部)であるマスフローコントローラ(MFC)241、および、開閉弁であるバルブ243が設けられている。ガス供給管232の上流側には、例えば不活性ガスである窒素(N2)ガス源が接続され、MFC241、バルブ243を介して処理室201内へ供給される。基板処理の際に複数種類のガスを使用する場合には、ガス供給管232のバルブ243よりも下流側に、上流側から順に流量制御器であるMFCおよび開閉弁であるバルブが設けられたガス供給管が接続された構成を用いることで複数種類のガスを供給することができる。ガス種毎にMFC、バルブが設けられたガス供給管を設置してもよい。
また、温度センサ263は、キャップフランジ104に設けることに限らず、載置台210に設けるようにしてもよい。また、温度センサ263は、キャップフランジ104や載置台210に直接設置するだけでなく、キャップフランジ104や載置台210に設けられた測定窓からの放射光を鏡等で反射させて間接的に測定するように構成されてもよい。さらに、温度センサ263は1つ設置することに限らず、複数設置するようにしてもよい。
また、本実施形態において、マイクロ波発振器655は、ケース102の側面に2つ配置されるように記載されているが、これに限らず、1つ以上設けられていればよく、また、ケース102の対向する側面等の異なる側面に設けられるように配置してもよい。主に、マイクロ波発振器655―1、655-2、導波管654-1、654-2および電磁波導入ポート653-1、653-2によって加熱装置としての電磁波供給部(電磁波供給装置、マイクロ波供給部、マイクロ波供給装置とも称する)が構成される。
図2および図4に示すように、搬送室203の側方であって、処理室201-1、201-2の間に処理室201-1、201-2から略等距離となる位置、具体的には、処理室201-1、201-2の基板搬入搬出口206からの搬送距離が略同一距離となるように、所定の基板処理を実施したウエハ200を冷却する冷却領域としての冷却室(冷却エリア、冷却部とも称する)204が冷却ケース109によって形成されている。冷却室204の内部には、基板保持具としてのボート217と同様の構造を有するウエハ冷却用載置具(クーリングステージとも称する、以下、CSと記載する)108が設けられている。CS108は、後述する図5に示すように、複数のウエハ保持溝107a~107dによって複数枚のウエハ200を垂直多段に水平保持することが可能なように構成されている。また、冷却ケース109には、ガス供給配管(冷却室用ガス供給配管)404を介して冷却室204内の雰囲気をパージするパージガス(冷却室用パージガス)としての不活性ガスを予め定められた第1のガス流量で供給する、冷却室用パージガス供給部としてのガス供給ノズル(冷却室用ガス供給ノズル)401が設置される。ガス供給ノズル401は、ノズル端部が開口された開口ノズルであってもよく、好ましくは、CS108側に面するノズル側壁に複数のガス供給口が設けられた多孔ノズルを用いることが好ましい。また、ガス供給ノズル401は複数設けられていてもよい。なお、ガス供給ノズル401から供給されるパージガスは、CS108に載置される処理後のウエハ200を冷却する冷却ガスとして用いてもよい。
次に、本実施形態の搬送室203に設けられている搬送室203内のパージガス循環構造について図1、図6を用いて説明する。図6に示すように、搬送室203は、搬送室203の周囲に形成されたダクト内にパージガスとしての不活性ガスまたは空気(フレッシュエアー)を予め定められた第2のガス流量で供給するパージガス供給機構(第2のガス供給部)162と、搬送室203内の圧力制御を行う圧力制御機構150とを備える。パージガス供給機構162は、主に搬送室203内の酸素濃度を検出する検出器160による検出値に応じてダクト内にパージガスを供給するように構成されている。検出器160は、塵や不純物を取り除き、搬送室203内にパージガスを供給するガス供給機構としてのクリーンユニット166の上方(上流側)に設置されている。クリーンユニット166は、塵や不純物を取り除くためのフィルタとパージガスを送風するための送風機(ファン)で構成されている。パージガス供給機構162と圧力制御機構150とにより、搬送室203内の酸素濃度を制御することが可能となる。ここで、検出器160は、酸素濃度に加えて水分濃度も検出可能な様に構成されていても良い。
図7に示すように、制御部(制御装置、制御手段)であるコントローラ121は、CPU(Central Processing Unit)121a、RAM(Random Access Memory)121b、記憶装置121c、I/Oポート121dを備えたコンピュータとして構成されている。RAM121b、記憶装置121c、I/Oポート121dは、内部バス121eを介して、CPU121aとデータ交換可能なように構成されている。コントローラ121には、例えばタッチパネル等として構成された入出力装置122が接続されている。
次に、上述の基板処理装置100の処理炉を用いて、半導体装置(デバイス)の製造工程の一工程として、例えば、基板上に形成されたシリコン含有膜としてのアモルファスシリコン膜の改質(結晶化)方法の一例について図8に示した処理フローに沿って説明する。以下の説明において、基板処理装置100を構成する各部の動作はコントローラ121により制御される。また、上述した処理炉構造と同様に本実施形態における基板処理工程においても、処理内容、すなわちレシピについては複数設けられた処理炉において同一レシピを使用する為、一方の処理炉を使用した基板処理工程について説明するに留め、他方の処理炉を用いた基板処理工程の説明は省略する。
図1に示されるように、移載機125はロードポートユニット106によって開口されたポッド110から処理対象となるウエハ200を所定枚数取り出し、ツィーザ125a-1、125a―2のいずれか一方、または両方にウエハ200を載置する。
図3に示されるように、ツィーザ125a-1、125a―2のいずれか一方、または両方に載置されたウエハ200はゲートバルブ205の開閉動作によって所定の処理室201に搬入(ボートローディング)される(S802)。
処理室201内へのボート217の搬入が完了したら、処理室201内が所定の圧力(例えば10~102000Pa)となるよう処理室201内の雰囲気を制御する。具体的には、真空ポンプ246により排気しつつ、圧力センサ245により検出された圧力情報に基づいて圧力調整器244の弁開度をフィードバック制御し、処理室201内を所定の圧力とする。また、同時に予備加熱として電磁波供給部を制御し、所定の温度まで加熱を行うように制御してもよい(S803)。電磁波供給部によって、所定の基板処理温度まで昇温させる場合、ウエハ200が変形・破損しないように、後述する改質工程の出力よりも小さな出力で昇温を行うことが好ましい。なお、大気圧下で基板処理を行う場合、炉内圧力調整を行わず、炉内の温度調整のみを行った後、後述する不活性ガス供給工程S804へ移行するように制御してもよい。
炉内圧力・温度調整工程S803によって処理室201内の圧力と温度を所定の値に制御すると、駆動機構267は、シャフト255を回転させ、載置台210上のボート217を介してウエハ200を回転させる。このとき、窒素ガス等の不活性ガスがガス供給管232を介して供給される(S804)。さらにこのとき、処理室201内の圧力は10Pa以上102000Pa以下の範囲となる所定の値であって、例えば101300Pa以上101650Pa以下となるように調整される。なお、シャフトは基板搬入工程S402時、すなわち、ウエハ200を処理室201内に搬入完了後に回転させてもよい。
処理室201内を所定の圧力となるように維持すると、マイクロ波発振器655は上述した各部を介して処理室201内にマイクロ波を供給する。処理室201内にマイクロ波が供給されることによって、ウエハ200が100℃以上、1000℃以下の温度、好適には400℃以上、900℃以下の温度となるように加熱し、さらに好適には、500℃以上、700℃以下の温度となるように加熱する。このような温度で基板処理することによって、ウエハ200が効率よくマイクロ波を吸収する温度下での基板処理となり、改質処理の速度向上が可能となる。換言すると、ウエハ200の温度を100℃よりも低い温度、または1000℃よりも高い温度下で処理してしまうと、ウエハ200の表面が変質してしまい、マイクロ波を吸収し難くなってしまうためにウエハ200を加熱し難くなってしまうこととなる。このため、上述した温度帯で基板処理を行うことが望まれる。
処理室201内の圧力を大気圧復帰させた後、ゲートバルブ205を開放し処理室201と搬送室203とを空間的に連通させる。その後、ボートに載置されているウエハ200を移載機125のツィーザ125aによって、搬送室203に搬出する(S806)。
ツイーザ125aによって搬出されたウエハ200は、移載装置125b、移載装置エレベータ125cの連続動作により、冷却室204まで移動され、ツィーザ125aによって、CS108に載置される。具体的には、図5(A)に示すように、ツィーザ125a-1に保持された改質処理S805後のウエハ200aが、CS108に設けられたウエハ保持溝107bに移送され、所定時間載置されることでウエハ200aが冷却される(S807)。このとき、図5(B)に示すように既に先行してCS108に冷却されていた冷却済ウエハ200bが載置されている場合には、改質処理S805完了後のウエハ200aをウエハ保持溝107bに載置後のツィーザ125a-1、または、他の空いているツィーザ(例えばツィーザ125a-2)が冷却済ウエハ200bをロードポート、すなわちポッド110に搬送する。
基板冷却工程S807によって冷却されたウエハ200は、ツイーザ125aによってCS108から搬出され、所定のポッド110に搬送される(S808)。
次に図9(A)、(B)を用いて冷却室204内の圧力制御について説明する。基板処理工程と同様に以下の説明において、各部の動作はコントローラ121により制御される。
図4に示す通り、本実施形態における冷却室204には、処理室201と搬送室203とを空間的に隔離するゲートバルブ205のような隔壁が配置されていない。このため、冷却室204内の圧力に応じて搬送室203内を流れるパージガスのガス流れに変化が生じてしまう。搬送室203内のガス流れの変化は搬送室203内においてパージガスの乱流を生じさせる原因となり、搬送室内のパーティクルを巻き上げてしまう原因や、ウエハ搬送時のウエハずれの原因となってしまうため、結果として形成された膜質の低下やスループットの低下などの悪影響が生じてしまうこととなる。これら悪影響を抑制するため、冷却室204内の圧力制御が必要となる。この圧力制御を行うため、搬送室203内に供給されるパージガスの流量は、冷却室204に供給されるパージガスの流量よりも大きくなるように制御される。
以上のように制御することによって、ゲートバルブ205が開放されることによって搬送室203内の圧力が低下した場合であっても、適宜冷却室204内の圧力を調整し、搬送室203と冷却室204との圧力差を一定に維持することが可能となり、搬送室203内におけるガス流れを乱すことなく、膜質の低下やスループットの低下を抑制することが可能となる。
本実施形態によれば以下に示す1つまたは複数の効果が得られる。
なお、ここでは、ハフニウム酸化膜について示したが、これに限らず、アルミニウム(Al)、チタニウム(Ti)、ジルコニウム(Zr)、タンタル(Ta)、ニオブ(Nb)、ランタン(La)、セリウム(Ce)、イットリウム(Y)、バリウム(Ba)、ストロンチウム(Sr)、カルシウム(Ca)、鉛(Pb)、モリブデン(Mo)、タングステン(W)等の少なくともいずれかを含む金属元素を含む酸化膜、すなわち、金属系酸化膜を改質する場合においても、好適に適用可能である。すなわち、上述の成膜シーケンスは、ウエハ200上に、TiOCN膜、TiOC膜、TiON膜、TiO膜、ZrOCN膜、ZrOC膜、ZrON膜、ZrO膜、HfOCN膜、HfOC膜、HfON膜、HfO膜、TaOCN膜、TaOC膜、TaON膜、TaO膜、NbOCN膜、NbOC膜、NbON膜、NbO膜、AlOCN膜、AlOC膜、AlON膜、AlO膜、MoOCN膜、MoOC膜、MoON膜、MoO膜、WOCN膜、WOC膜、WON膜、WO膜を改質する場合にも、好適に適用することが可能となる。
Claims (11)
- 基板を搬送する搬送室から前記基板が搬送されて所定の処理を行う少なくとも2つの処理室と、
前記搬送室と空間的に連結され、前記少なくとも2つの処理室から等距離であって前記搬送室の側壁に配置され、内部の雰囲気をパージするパージガスを第1のガス流量にて供給する第1のガス供給部と、前記パージガスを排気する排気配管を有する排気部とを備えた冷却室と、
を有する基板処理装置。 - 前記搬送室は、内部の雰囲気をパージするパージガスを前記第1のガス流量よりも大きい流量の第2
のガス流量で供給する第2のガス供給部を有する請求項1に記載の基板処理装置。 - 前記第1のガス流量は10slm以上、800slm以下であり、前記第2のガス流量は100slm以上、2000slm以下となるように前記第1のガス供給部および前記第2のガス供給部を制御するよう構成される制御部を有する請求項2に記載の基板処理装置。
- 前記排気配管は、前記第2のガス供給部の上流に合流するように配置され、前記排気部から排気されたガスが循環する循環構造を構成する請求項2に記載の基板処理装置。
- 前記搬送室内の圧力と前記冷却室内の圧力の検知した値に応じて、前記第1のガス供給部と前記排気部とを制御するよう構成される制御部を有する請求項1に記載の基板処理装置。
- 前記搬送室内の圧力は前記処理室のそれぞれにおける内部圧力よりも低く、前記冷却室内の圧力よりも高く制御される請求項1に記載の基板処理装置。
- 前記搬送室内の圧力と前記処理室の圧力との差は、0Paよりも大きく、100Pa以下である請求項5に記載の基板処理装置。
- 前記冷却室の側壁に内部に冷媒を流通させるための冷媒配管と、をさらに有する請求項1に記載の基板処理装置。
- 前記処理室内において前記基板をマイクロ波によって加熱する加熱装置をさらに備えた請求項1に記載の基板処理装置。
- 基板を搬送する搬送室から前記基板が搬送されて所定の処理を行う少なくとも2つの処理室と、前記搬送室と空間的に連結され、前記少なくとも2つの処理室から等距離であって前記搬送室の側壁に配置され、内部の雰囲気をパージするパージガスを第1のガス流量にて供給する第1のガス供給部と、前記パージガスを排気する排気配管を有する排気部とを備えた冷却室と、を有する基板処理装置の前記処理室内に前記基板を搬送する工程と、
前記処理室内で前記基板に所定の処理を行う工程と、
所定の処理を行った前記基板を前記処理室から搬出する工程と、
前記処理室から搬出された前記基板を前記冷却室に搬送し、前記基板を冷却する工程と、
を有する半導体装置の製造方法。 - 基板を搬送する搬送室から前記基板が搬送されて所定の処理を行う少なくとも2つの処理室と、前記搬送室と空間的に連結され、前記少なくとも2つの処理室から等距離であって前記搬送室の側壁に配置され、内部の雰囲気をパージするパージガスを第1のガス流量にて供給する第1のガス供給部と、前記パージガスを排気する排気配管を有する排気部とを備えた冷却室と、を有する基板処理装置の前記処理室内に前記基板を搬送する手順と、
前記処理室内で前記基板に所定の処理を行う手順と、
所定の処理を行った前記基板を前記処理室から搬出する手順と、
前記処理室から搬出された前記基板を前記冷却室に搬送し、前記基板を冷却する手順と、
をコンピュータによって前記基板処理装置に実行させるプログラム。
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JPH09104982A (ja) * | 1995-08-05 | 1997-04-22 | Kokusai Electric Co Ltd | 基板処理装置 |
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JP2000150618A (ja) * | 1998-11-17 | 2000-05-30 | Tokyo Electron Ltd | 真空処理システム |
JP2015070045A (ja) * | 2013-09-27 | 2015-04-13 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
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US20200194287A1 (en) | 2020-06-18 |
KR20200026306A (ko) | 2020-03-10 |
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