WO2019041630A1 - 阵列基板的制作方法及其制作设备 - Google Patents

阵列基板的制作方法及其制作设备 Download PDF

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Publication number
WO2019041630A1
WO2019041630A1 PCT/CN2017/115861 CN2017115861W WO2019041630A1 WO 2019041630 A1 WO2019041630 A1 WO 2019041630A1 CN 2017115861 W CN2017115861 W CN 2017115861W WO 2019041630 A1 WO2019041630 A1 WO 2019041630A1
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metal layer
layer
protective layer
metal
forming
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PCT/CN2017/115861
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English (en)
French (fr)
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何怀亮
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惠科股份有限公司
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Priority to US16/643,415 priority Critical patent/US11183519B2/en
Publication of WO2019041630A1 publication Critical patent/WO2019041630A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes

Definitions

  • the present application relates to the field of display technologies, and in particular, to a method for fabricating an array substrate and a device for fabricating the same.
  • the display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • Most of the displays on the market today are backlight-type displays, which include a display panel and a backlight module.
  • the working principle of the display panel is to place liquid crystal molecules in two parallel substrates, and apply driving voltages on the two substrates to control the rotation direction of the liquid crystal molecules to refract the light of the backlight module to generate a picture.
  • the thin film transistor liquid crystal display includes a display panel and a backlight module, and the display panel includes a color filter substrate (CF Substrate, also referred to as a color filter substrate) and a thin film transistor array substrate (Thin Film Transistor Substrate, TFT Substrate).
  • CF Substrate also referred to as a color filter substrate
  • TFT Substrate thin film transistor array substrate
  • a transparent electrode is present on the opposite inner side of the substrate.
  • a layer of liquid crystal molecules (LC) is sandwiched between the two substrates.
  • the display panel controls the orientation of the liquid crystal molecules by an electric field, changes the polarization state of the light, and achieves the purpose of display by the penetration and blocking of the optical path by the polarizing plate.
  • the process metal layer of the existing display panel may have an oxidation problem, which may cause poor contact of the metal layer, thereby affecting the display effect of the display panel.
  • the technical problem to be solved by the present application is to provide a method for fabricating an array substrate which effectively solves the surface oxidation of a metal layer.
  • the present application also provides an apparatus for fabricating an array substrate.
  • a method of fabricating an array substrate comprising: providing a substrate; Forming a metal layer on the plate; bombarding the metal layer with hydrogen ions; and forming a protective layer on the metal layer.
  • the substrate is provided with an active switch, a scan line and a data line disposed perpendicular to the scan line, the active switch includes the metal layer, the scan line and the data line and the active switch coupling
  • the metal layer includes a first metal layer, a second metal layer, the scan line, and the data line.
  • the method of bombarding the metal layer with hydrogen ions comprises: dissociating hydrogen into hydrogen atoms; ionizing the hydrogen atoms to form hydrogen ions; and bombarding the metal layer with the hydrogen ions.
  • the molecules of the hydrogen gas in the mixed gas are dissociated into two hydrogen atoms by the fabrication equipment of the array substrate, and the hydrogen atoms are further ionized to form positively charged hydrogen ions and negatively charged electrons, and ionized hydrogen ions are passed through.
  • Bombardment of the surface of the metal layer can effectively solve the problem of surface oxidation of the metal layer, and reduce the metal oxide to metal by the redox reaction of hydrogen ions, and can effectively solve the waiting time between the metal layer process and the protective layer process. Short question.
  • the protective layer includes a first protective layer and a second protective layer, the first metal layer is disposed on the substrate, the first protective layer is disposed on the first metal layer, and the second A metal layer is disposed on the first protective layer, and the second protective layer is disposed on the second metal layer.
  • the metal layer can be effectively protected, and the oxidation of the surface of the metal layer can be further avoided.
  • the protective layer is reworked. It can effectively prevent the direct corrosion of the metal layer of the array substrate by the cleaning agent, so that the metal layer can be kept intact, thereby avoiding the problem of disconnection, thereby improving the success rate of the display panel and reducing the scrapping cost.
  • the transparent layer is formed on the second protective layer, and the second protective layer is provided with an opening, and the transparent electrode layer is connected to the second metal layer through the opening.
  • the transparent electrode layer and the second metal layer are conveniently connected, thereby ensuring a good display effect of the display panel, and the hydrogen is applied to the second metal layer at the opening before the transparent electrode layer is disposed.
  • the bombardment can effectively solve the problem of surface oxidation of the second metal layer, and the metal oxide on the second metal layer is reduced to metal by the redox reaction of hydrogen ions.
  • the first metal layer and the second metal layer are made of copper, aluminum, silver, gold or an alloy of the above metals.
  • the first protective layer and the second protective layer respectively adopt a silicon nitride layer and/or a silicon oxide layer.
  • the first protective layer and the second protective layer are respectively stacked and disposed in two layers.
  • first protective layer and the second protective layer are made of the same material.
  • first protective layer and the second protective layer are made of different materials.
  • the method of forming a metal layer on the substrate comprises: forming the first metal layer on the substrate; the method of bombarding the metal layer with hydrogen ions comprises: bombarding the first layer with hydrogen ions a metal layer; the method of forming a protective layer on the metal layer comprising: forming the first protective layer on the first metal layer.
  • bombarding the first metal layer with hydrogen ions before the first protective layer is disposed can effectively solve the problem of surface oxidation of the first metal layer, and reduce the metal oxide to metal by the redox reaction of hydrogen ions, and can effectively solve the problem.
  • the problem that the waiting time between the first metal layer process and the first protective layer process is too short.
  • the method for forming a metal layer on the substrate includes: forming the second metal layer on the first protective layer; and the method of bombarding the metal layer with hydrogen ions comprises: bombarding with hydrogen ions
  • the second metal layer; the method of forming a protective layer on the metal layer comprises: forming the second protective layer on the second metal layer.
  • bombarding the second metal layer with hydrogen ions before the second protective layer is disposed can effectively solve the problem of surface oxidation of the second metal layer, and reduce the metal oxide to metal by the redox reaction of hydrogen ions, and can effectively solve the problem.
  • the problem that the waiting time between the second metal layer process and the second protective layer process is too short.
  • the manufacturing method includes the steps of: forming the first metal layer on the substrate; bombarding the first metal layer with hydrogen ions to form the scan line, a gate of the active switch; Forming the first protective layer, the semiconductor layer and the second metal layer on the first metal layer; bombarding the second metal layer with hydrogen ions to form the data line, the source and drain of the active switch Forming the second protective layer on the second metal layer; and forming the transparent electrode layer connected to the drain on the second protective layer.
  • the manufacturing method includes the steps of: forming the first metal layer on the substrate; bombarding the first metal layer with hydrogen ions to form the scan line, a gate of the active switch; Forming the first protective layer and the semiconductor layer on the first metal layer; forming the second metal layer on the semiconductor layer; bombarding the second metal layer with hydrogen ions to form the data line, the active a source and a drain of the switch; forming the second protective layer on the second metal layer; The transparent electrode layer connected to the drain is formed on the second protective layer.
  • the present application also discloses an apparatus for fabricating an array substrate, including: an air inlet, a dissociation device, an air outlet, and a coating device.
  • the gas inlet is for injecting hydrogen and air;
  • the dissociation device is for dissociating hydrogen to form hydrogen ions;
  • the gas outlet is for releasing hydrogen ions to bombard the metal layer;
  • the coating device is for the metal layer Forming a protective layer thereon;
  • the manufacturing apparatus further includes a casing, the air inlet and the air outlet are disposed on the casing, the dissociating device is disposed in the casing, and the dissociating device includes a high voltage electrode And a ceramic electrode, the connection disengagement device is connected to the air inlet through a cooling sleeve.
  • the housing includes an anti-static board, and the air outlet is disposed on the anti-static board.
  • the anti-static board can effectively isolate the static electricity, ensure that the production equipment can better exert hydrogen ions on the surface of the metal layer, and the hydrogen ions accelerate to fly to the surface of the metal layer through the air outlet, and the metal layer on the display panel is performed.
  • the treatment can effectively solve the problem of surface oxidation of the metal layer.
  • the present application also discloses a display panel, which is fabricated by the above-described method of fabricating an array substrate.
  • the present application further discloses a method for fabricating an array substrate, the method comprising: providing a substrate; forming a first metal layer on the substrate; dissociating hydrogen into hydrogen atoms; The hydrogen atoms are ionized to form hydrogen ions; the first metal layer is bombarded with hydrogen ions to form a scan line, a gate of an active switch; a first protective layer and a semiconductor layer are formed on the first metal layer; Forming a second metal layer on the semiconductor layer; bombarding the second metal layer with hydrogen ions to form a data line, a source and a drain of the active switch; forming a second protective layer on the second metal layer; A transparent electrode layer connected to the drain is formed on the second protective layer.
  • the problem of surface oxidation of the metal layer can be effectively solved, and the metal oxide can be reduced to metal by the redox reaction of hydrogen ions, and the metal layer process can be effectively solved.
  • the problem of too short waiting time between layer processes the use of hydrogen ions to bombard the metal layer to treat oxides on the surface of the metal layer, enabling more efficient metal
  • the oxide is processed, the production time of the display panel is effectively saved, and the production efficiency of the display panel is further improved; the protective layer is disposed on the metal layer treated by the hydrogen ion bombardment, and the protective layer is disposed to effectively protect the metal layer.
  • the oxidation of the surface of the metal layer is avoided, and the side of the metal layer has a metal burr from the viewpoint of the microstructure.
  • the metal burr on the metal layer can be effectively covered. Effectively avoid the metal burr exposed outside the protective layer, and the protective layer can be used to repair the repaired area of the process well without the need to scrap the thin film transistor array substrate, which is more environmentally friendly.
  • FIG. 1 is a flow chart of a method for fabricating an array substrate according to an embodiment of the present application
  • FIG. 2 is a flow chart of a method for fabricating an array substrate according to an embodiment of the present application
  • FIG. 3 is a schematic structural diagram of a display panel according to an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a display panel according to an embodiment of the present application.
  • FIG. 5 is a flow chart of a method for fabricating an array substrate according to an embodiment of the present application.
  • FIG. 6 is a flow chart of a method for fabricating an array substrate according to an embodiment of the present application.
  • FIG. 7 is a flow chart of a method for fabricating an array substrate according to an embodiment of the present application.
  • FIG. 8 is a flow chart of a method for fabricating an array substrate according to an embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of a manufacturing apparatus according to an embodiment of the present application.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may be explicitly or implicitly Includes one or more of this feature.
  • a plurality means two or more unless otherwise stated.
  • the term “comprises” and its variations are intended to cover a non-exclusive inclusion.
  • connection In the description of the present application, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise explicitly defined and defined. Connected, or integrally connected; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components. For those skilled in the art, the specific meanings of the above terms in the present application can be understood on a case-by-case basis.
  • a method for fabricating an array substrate includes:
  • Step S11 providing a substrate
  • Step S12 forming a metal layer on the substrate
  • Step S13 bombarding the metal layer with hydrogen ions
  • Step S14 forming a protective layer on the metal layer.
  • the substrate is provided with an active switch, a scan line and a data line disposed perpendicular to the scan line, the active switch includes the metal layer, the scan line and the data line and the active switch coupling
  • the metal layer includes a first metal layer, a second metal layer, the scan line, and the data line.
  • the use of hydrogen ions to bombard the metal layer before the protective layer is disposed can effectively solve the problem of surface oxidation of the metal layer, and reduce the metal oxide to metal by the redox reaction of hydrogen ions, and can effectively solve the metal layer process to the protective layer process.
  • a protective layer is provided on the metal layer treated by hydrogen ion bombardment, and the setting of the protective layer can be effective
  • the metal layer is protected to further avoid oxidation of the surface of the metal layer, and the side of the metal layer has metal burrs from the viewpoint of the microstructure, and the protective layer can be disposed on the metal layer effectively.
  • the metal burr is covered to effectively prevent the metal burr from being exposed outside the protective layer.
  • the protective layer can be used to repair the repaired area of the process well without the need to scrap the thin film transistor array substrate.
  • the green environment of course, the metal layer may be bombarded with a mixed gas containing hydrogen ions, or the metal layer may be bombarded with a plasma containing hydrogen ions.
  • the metal layer is made of copper, aluminum, silver, gold or an alloy of the above metals, optionally made of pure copper.
  • Pure copper has good electrical conductivity and low electrical resistivity; copper is a less active metal at room temperature. It does not combine with the oxidation in dry air; and the melting point of copper is low, it is easy to remelt and re-smelt, which is convenient for recycling.
  • the copper reserves are large, which facilitates the procurement of raw materials and can further control the production cost.
  • the method for bombarding a metal layer with hydrogen ions includes:
  • Step S21 dissociating hydrogen into a hydrogen atom
  • Step S22 ionizing the hydrogen atom to form a hydrogen ion
  • Step S23 bombarding the metal layer with the hydrogen ions.
  • the molecules of hydrogen in the mixed gas are dissociated into two hydrogen atoms, and the hydrogen atoms are further ionized to form positively charged hydrogen ions and negatively charged electrons, and bombarded by ionized hydrogen ions.
  • the surface of the metal layer can effectively solve the problem of surface oxidation of the metal layer, and the metal oxide is reduced to metal by the redox reaction of hydrogen ions, and the waiting time between the metal layer process and the protective layer process can be effectively solved.
  • the metal layer of the example is made of pure copper, and the hydrogen ion reacts with the copper oxide to reduce the copper oxide to metal copper by hydrogen ion redox reaction, which effectively avoids the contact failure of the metal layer caused by the copper oxide, further ensuring the problem.
  • the display panel has a good display effect; then the protective layer is provided by vapor deposition or chemical vapor deposition, and the protective layer is disposed to effectively protect the metal layer, further avoiding oxidation of the surface of the metal layer.
  • the protective layer includes a first protective layer 12 and a second protective layer 15.
  • the first metal layer 11 is disposed on the substrate 1, and the first protective layer 12 is disposed on the first metal layer 11 and the second metal layer.
  • 14 is disposed on the first protective layer 12, the second protective layer 15 is disposed on the second metal layer 14, the second metal layer 14 includes a channel 18 between the source layer 141 and the drain layer 142, and a semiconductor
  • the layer 13 is disposed at the bottom of the channel 18.
  • the protective layer can effectively prevent the direct corrosion of the metal layer of the array substrate by the cleaning agent, so that the metal layer can be maintained.
  • the first protective layer 12 and the second The protective layer 15 can better cover the metal burrs on the metal layer, and is very effective for preventing the metal burrs from being exposed outside the protective layer, so that the protective layer can better protect the metal layer; It is very good to repair the area where the process has problems, and it is not necessary to scrap the thin film transistor array substrate, which is more environmentally friendly.
  • the protective layer is a silicon oxide layer, that is, the protective layer is made of a silicon oxide material, and the metal layer is bombarded with hydrogen ions before the deposition of the silicon oxide to the metal layer by a chemical vapor deposition (CVD) technique, which can effectively solve the problem.
  • the problem of surface oxidation of the metal layer is to reduce the metal oxide to metal by the redox reaction of hydrogen ions, and at the same time effectively solve the problem that the waiting time between the metal layer process and the protective layer process is too short, and perform a chemical on the metal layer.
  • the vapor deposition After the vapor deposition, waiting for the first silicon oxide layer to be cooled and solidified to form the first first protective layer 12, and after the second chemical vapor deposition of the first first protective layer 12, forming the second first protective layer 12, Repeat the above steps to deposit at least two silicon oxide layers on the metal layer to better cover the metal layer, which is very effective to prevent the metal burrs from being exposed outside the protective layer, so that the protective layer can better perform the metal layer. Protection, the chemical properties of silica are relatively stable and will not react with potassium hydroxide solution, effectively avoiding the cleaning agent against gold.
  • Corrosion damage of the layer can protect the metal layer very well; and at least two silicon oxide layers are formed by performing multiple chemical vapor deposition, no additional replacement raw materials are needed in the middle, no additional equipment is needed, and the cost of raw materials is reduced.
  • Storage cost, bill of materials does not need to add new materials, facilitate process management and procurement, while chemical vapor deposition technology is mature, can control the use of silicon oxide, further reduce production and manufacturing costs, make display panels more powerful The market competitiveness; of course, the second protective layer 15 can also set two layers in the same way.
  • the protective layer can also be a silicon nitride layer, that is, the protective layer is made of a silicon nitride material, and the metal layer can be effectively bombarded by hydrogen ion bombardment before the silicon nitride is deposited on the metal layer by chemical vapor deposition.
  • the problem of oxidation of the surface of the layer is to reduce the metal oxide to metal by the redox reaction of hydrogen ions, and at the same time effectively solve the waiting time between the metal layer process and the protective layer process. Too short a problem, after performing a chemical vapor deposition on the metal layer, waiting for the first silicon nitride layer to cool and solidify to form the first first protective layer 12, and the first protective layer 12 in the first layer for the second time.
  • a second first protective layer 12 is formed, and the above steps are repeated to deposit at least two silicon nitride layers on the metal layer to better cover the metal layer, thereby effectively preventing the metal burrs from being exposed.
  • the protective layer can better protect the metal layer, the silicon nitride does not react with the potassium hydroxide solution, effectively avoids the corrosion damage of the metal layer by the cleaning agent, and can perform the metal layer very well. Protection, silicon nitride is a super-hard substance, and the silicon nitride material is resistant to wear, resists oxidation at high temperatures, and is resistant to thermal shock, and at least two layers of silicon nitride are formed by performing multiple chemical vapor deposition.
  • the second protective layer 15 can also adopt the same method. Set two layers.
  • the protective layer includes a silicon nitride layer and a silicon oxide layer
  • the metal layer is bombarded with hydrogen ions before the chemical vapor deposition technology deposits the silicon oxide to the metal layer.
  • the metal layer is bombarded with hydrogen ions before the chemical vapor deposition technology deposits the silicon oxide to the metal layer.
  • the metal layer is bombarded with hydrogen ions before the chemical vapor deposition technology deposits the silicon oxide to the metal layer.
  • the metal layer is bombarded with hydrogen ions before the chemical vapor deposition technology deposits the silicon oxide to the metal layer.
  • the deposition technique deposits silicon oxide on the metal layer, waits for the silicon oxide layer to cool and solidify to form the first first protective layer 12, and then deposits silicon nitride onto the silicon oxide layer by chemical vapor deposition to form a second first protective layer.
  • the second protective layer 15 can also be provided with two layers of the same silicon nitride layer and a silicon oxide layer.
  • the second protective layer 15 is formed with a transparent electrode layer 17, and the second protective layer 15 is provided with an opening 16 through which the transparent electrode layer 17 is connected to the second metal layer 14 through the second protection.
  • An opening 16 is disposed on the layer 15 to facilitate the connection between the transparent electrode layer 17 and the second metal layer 14 to ensure a good display effect of the display panel.
  • the second metal layer 14 at the opening 16 is made of hydrogen ions before the transparent electrode layer 17 is disposed.
  • the method for forming a metal layer on the substrate 1 includes:
  • Step S31 forming a first metal layer on the substrate
  • the method for bombarding a metal layer with hydrogen ions includes:
  • Step S32 bombarding the first metal layer with hydrogen ions
  • the method for providing a protective layer on a metal layer includes:
  • Step S33 forming a first protective layer on the first metal layer.
  • the problem of surface oxidation of the first metal layer 11 can be effectively solved, and the metal oxide can be reduced to metal by the redox reaction of hydrogen ions, and can be effective at the same time.
  • Solving the problem that the waiting time between the process of the first metal layer 11 and the process of the first protective layer 12 is too short; providing the first protective layer 12 on the first metal layer 11 treated by the hydrogen ion bombardment, the first protective layer 12 The arrangement can effectively protect the first metal layer 11 to further avoid oxidation of the surface of the first metal layer 11, and the side edges of the first metal layer 11 have metal burrs from the microstructure.
  • the setting of the first protective layer 12 can effectively cover the metal burrs on the first metal layer 11, effectively preventing the metal burrs from being exposed outside the first protective layer 12, and the setting of the first protective layer 12 can be very It is good to repair the area where the process has problems, and it is not necessary to scrap the thin film transistor array substrate, which is more environmentally friendly.
  • the method for forming a metal layer on the substrate 1 includes:
  • Step S41 forming a second metal layer on the first protective layer
  • the method for bombarding a metal layer with hydrogen ions includes:
  • Step S42 bombarding the second metal layer with hydrogen ions
  • the method for providing a protective layer on a metal layer includes:
  • Step S43 forming a second protective layer on the second metal layer.
  • the problem of surface oxidation of the second metal layer 14 can be effectively solved, and the metal oxide can be reduced to metal by the redox reaction of hydrogen ions, and can be effective at the same time.
  • Solving the problem that the waiting time between the process of the second metal layer 14 and the process of the second protective layer 15 is too short; providing a second protective layer 15 on the second metal layer 14 treated by the hydrogen ion bombardment, the second protective layer 15 The arrangement can effectively protect the second metal layer 14 to further avoid oxidation of the surface of the second metal layer 14, and the side edges of the second metal layer 14 have metal burrs from the microstructure.
  • the arrangement of the second protective layer 15 can effectively cover the metal burrs on the second metal layer 14, effectively preventing the metal burrs from being exposed outside the second protective layer 15, and the setting of the second protective layer 15 can be very It is good to repair the area where the process has problems, and it is not necessary to scrap the thin film transistor array substrate, which is more environmentally friendly.
  • the method for fabricating the array substrate includes the steps of:
  • Step S51 forming a first metal layer on the substrate
  • Step S52 bombarding the first metal layer with hydrogen ions to form a scan line and a gate of the active switch;
  • Step S53 forming a first protective layer, a semiconductor layer and a second metal layer on the first metal layer;
  • Step S54 bombarding the second metal layer with hydrogen ions to form a data line, a source and a drain of the active switch;
  • Step S55 forming a second protective layer on the second metal layer
  • Step S56 forming a transparent electrode layer connected to the drain on the second protective layer.
  • the first mask process firstly, the substrate 1 is cleaned, and the first metal material layer is sputtered on the cleaned substrate 1 to complete the sputtering of the first metal material layer, before the film formation, and then after the cleaning.
  • a photoresist is coated on the metal material layer, the photoresist is aligned and exposed by the first mask, and the first metal layer 11 is developed by the developer in the first metal material layer, and then the first layer is etched.
  • the metal material layer is etched to obtain the first metal layer 11, and the residual photoresist is removed to complete the first mask process inspection.
  • the second mask process firstly, the substrate 1 for completing the first mask process is cleaned, and the first protective layer 12 is deposited on the first metal layer 11 by chemical vapor deposition technology onto the first metal layer 11 after cleaning.
  • the first metal layer 11 is bombarded with hydrogen ions, which can effectively solve the problem of surface oxidation of the first metal layer 11, and the metal oxide is reduced by the redox reaction of hydrogen ions.
  • the metal is formed, and at the same time, the problem that the waiting time between the first metal layer 11 and the first protective layer 12 is too short can be effectively solved.
  • the third mask process firstly, the substrate 1 for completing the second mask process is cleaned, a second protective material layer is formed on the cleaned second metal layer 14, and then the photoresist is coated on the second metal material layer. Aligning and exposing the photoresist with a third mask, developing a pattern of the second protective layer 15 on the second protective material layer with a developing solution, and then etching the second protective material layer with an etching solution to obtain a second protective layer 15. Remove the residual photoresist and complete the third mask process inspection.
  • the second metal layer 14 is bombarded with hydrogen ions, which can effectively solve the problem of surface oxidation of the second metal layer 14, and the metal oxide is reduced by the redox reaction of hydrogen ions.
  • the metal formation can effectively solve the problem that the waiting time between the second metal layer 14 and the second protective layer 15 is too short.
  • the fourth mask process firstly, the substrate 1 for completing the third mask process is cleaned, a transparent electrode material layer is formed on the cleaned second protective layer 15, and then the photoresist is coated on the transparent electrode material layer.
  • the photoresist is aligned and exposed by the four masks, and the pattern of the transparent electrode layer 17 is developed by developing the solution on the transparent electrode material layer, and then the transparent electrode material layer is etched by using an etching solution to obtain the transparent electrode layer 17, and the residual light is applied.
  • the resistor is removed to complete the fourth mask process inspection.
  • the method for fabricating an array substrate includes the steps of:
  • Step S61 forming a first metal layer on the substrate
  • Step S62 bombarding the first metal layer with hydrogen ions to form a scan line and a gate of the active switch;
  • Step S63 forming a first protective layer and a semiconductor layer on the first metal layer
  • Step S64 forming a second metal layer on the semiconductor layer
  • Step S65 bombarding the second metal layer with hydrogen ions to form a data line, a source and a drain of the active switch;
  • Step S66 forming a second protective layer on the second metal layer
  • Step S67 forming a transparent electrode layer connected to the drain on the second protective layer.
  • the first mask process firstly, the substrate 1 is cleaned, and the first metal material layer is sputtered on the cleaned substrate 1 to complete the sputtering of the first metal material layer, before the film formation, and then after the cleaning.
  • a photoresist is coated on the metal material layer, the photoresist is aligned and exposed by the first mask, and the first metal layer 11 is developed by the developer in the first metal material layer, and then the first layer is etched.
  • the metal material layer is etched to obtain the first metal layer 11, and the residual photoresist is removed to complete the first mask process inspection.
  • the second mask process firstly, the substrate 1 for completing the first mask process is cleaned, and the first protective layer 12 is deposited on the first metal layer 11 by chemical vapor deposition technology onto the first metal layer 11 after cleaning. Forming a semiconductor material layer on the first protective layer 12, performing pre-film cleaning after sputtering of the semiconductor material layer, then applying a photoresist on the cleaned semiconductor material layer, and using a second photomask to resist the photoresist After the exposure, the pattern of the semiconductor layer 13 is obtained by developing the semiconductor material layer with a developing solution, and then the semiconductor material layer is etched by using an etching solution to obtain the semiconductor layer 13, and the residual photoresist is removed to complete the second mask process inspection.
  • the first metal layer 11 is bombarded with hydrogen ions, which can effectively solve the problem of surface oxidation of the first metal layer 11, and the metal oxide is reduced by the redox reaction of hydrogen ions.
  • the metal is formed, and at the same time, the problem that the waiting time between the first metal layer 11 and the first protective layer 12 is too short can be effectively solved.
  • the third mask process firstly, the substrate 1 for completing the second mask process is cleaned, a second metal material layer is formed on the cleaned semiconductor layer 13, and the second metal material layer is sputtered and then pre-film cleaning is performed. And then coating a photoresist on the cleaned second metal material layer, aligning and exposing the photoresist with a third mask, and developing a pattern of the second metal layer 14 with the developer in the second metal material layer, Then, the second metal material layer is etched by using an etching solution to obtain the second metal layer 14, and the residual photoresist is removed to complete the third mask process inspection.
  • the fourth mask process firstly, the substrate 1 for completing the third mask process is cleaned, a second protective material layer is formed on the cleaned second metal layer 14, and then the photoresist is coated on the second metal material layer. Aligning and exposing the photoresist with a fourth mask, developing a pattern of the second protective layer 15 on the second protective material layer with a developing solution, and then etching the second protective material layer with an etching solution to obtain a second protective layer 15. Remove the residual photoresist and complete the fourth mask process inspection.
  • the second metal layer 14 is bombarded with hydrogen ions, which can effectively solve the problem of surface oxidation of the second metal layer 14, and the metal oxide is reduced by the redox reaction of hydrogen ions.
  • the metal formation can effectively solve the problem that the waiting time between the second metal layer 14 and the second protective layer 15 is too short.
  • the fifth mask process firstly, the substrate 1 for completing the fourth mask process is cleaned, a transparent electrode material layer is formed on the cleaned second protective layer 15, and then the photoresist is coated on the transparent electrode material layer.
  • the mask is aligned and exposed by the five masks, and the pattern of the transparent electrode layer 17 is developed by developing the solution on the transparent electrode material layer, and then the transparent electrode material layer is etched by using an etching solution to obtain the transparent electrode layer 17, and the residual light is applied.
  • the resistor is removed to complete the fifth mask process inspection.
  • the present application further discloses a manufacturing device 2 for a display panel, including:
  • the manufacturing apparatus 2 further includes a housing 21, a coating device 29, an air inlet 22 and an air outlet 23 are provided on the housing 21, and a dissociation device 24 is provided in the housing 21, the dissociation device 24 including a high voltage electrode 25 and a ceramic
  • the electrode 26, the dissociation device 24 is connected to the intake port 22 via a cooling jacket 27.
  • the mixed gas of hydrogen and air is injected through the air inlet 22, thereby effectively avoiding the hydrogen concentration being too high, thereby further ensuring the production safety of the display panel.
  • the high voltage electrode 25 and the ceramic electrode 26 work together to hydrogen.
  • Hydrogen ions are formed, and hydrogen ions are accelerated to the surface of the metal layer through the gas outlet 23, and the metal layer on the display panel is treated to effectively solve the problem of surface oxidation of the metal layer, and the metal is oxidized by the redox reaction of hydrogen ions.
  • the material is reduced to metal, and at the same time, the problem that the waiting time between the metal layer process and the protective layer process is too short can be effectively solved.
  • the housing 21 includes an anti-static board 28, and the air outlet 23 is disposed on the anti-static board 28, and an arc phenomenon occurs at the air outlet 23, and the anti-static board 28 can effectively isolate static electricity to ensure
  • the manufacturing device 2 can better act on hydrogen ions on the surface of the metal layer, and the hydrogen ions pass through
  • the gas port 23 accelerates to the surface of the metal layer, and the metal layer on the display panel is processed, which can effectively solve the problem of surface oxidation of the metal layer, and reduce the metal oxide to metal by the redox reaction of hydrogen ions, and can effectively Solve the problem that the waiting time between the metal layer process and the protective layer process is too short.
  • the present application also discloses a display panel, which is fabricated by the above-described method of fabricating an array substrate.
  • the display panel is, for example, a liquid crystal display panel, an OLED display panel, a QLED display panel, a curved display panel, or other display panel.

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Abstract

一种阵列基板的制作方法及其制作设备，所述制作方法包括：在基板（1）上形成主动开关；在所述主动开关上形成透明电极层（17）；在所述透明电极层（17）上形成像素层；所述在基板（1）上形成主动开关的方法包括：在基板上形成金属层（11、14）；采用氢离子轰击所述金属层（11、14）；以及在所述金属层（11、14）上形成保护层（12、15）。

Description

阵列基板的制作方法及其制作设备 技术领域
本申请涉及显示技术领域，尤其涉及一种阵列基板的制作方法及其制作设备。
背景技术
显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有市场上的显示器大部分为背光型显示器，其包括显示面板及背光模组(backlight module)。显示面板的工作原理是在两片平行的基板当中放置液晶分子，并在两片基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
其中，薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)由于具有低的功耗、优异的画面品质以及较高的生产良率等性能，目前已经逐渐占据了显示领域的主导地位。同样，薄膜晶体管液晶显示器包含显示面板和背光模组，显示面板包括彩膜基板(Color Filter Substrate，CF Substrate，也称彩色滤光片基板)和薄膜晶体管阵列基板(Thin Film Transistor Substrate，TFT Substrate)，上述基板的相对内侧存在透明电极。两片基板之间夹一层液晶分子(Liquid Crystal，LC)。显示面板是通过电场对液晶分子取向的控制，改变光的偏振状态，并藉由偏光板实现光路的穿透与阻挡，实现显示的目的。
现有显示面板的制程金属层会出现氧化的问题，会造成金属层的接触不良，从而影响显示面板的显示效果。
发明内容
本申请所要解决的技术问题是提供一种有效解决金属层表面氧化的阵列基板的制作方法。
此外，本申请还提供一种阵列基板的制作设备。
本申请的目的是通过以下技术方案来实现的：
一种阵列基板的制作方法，所述制作方法包括：提供一基板；在所述基 板上形成金属层；采用氢离子轰击所述金属层；以及在所述金属层上形成保护层。其中，所述基板上设有主动开关、扫描线以及与所述扫描线垂直设置的数据线，所述主动开关包括所述金属层，所述扫描线和所述数据线和所述主动开关耦接，所述金属层包括第一金属层、第二金属层、所述扫描线和所述数据线。
其中，所述采用氢离子轰击所述金属层的方法包括：将氢气离解成氢原子；将所述氢原子电离形成氢离子；以及采用所述氢离子轰击所述金属层。
这样，通过阵列基板的制作设备，将混合气体中的氢气的分子离解成两个氢原子，进一步的将氢原子电离形成为带正电荷的氢离子和带负电荷的电子，通过电离的氢离子轰击金属层的表面，能够有效的解决金属层的表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决金属层制程到保护层制程之间的等待时间过短的问题。
其中，所述保护层包括第一保护层和第二保护层，所述第一金属层设在所述基板上，所述第一保护层设在所述第一金属层上，所述第二金属层设在所述第一保护层上，所述第二保护层设在所述第二金属层上。这样，通过第一保护层和第二保护层的设置，能够有效的对金属层进行保护，进一步的避免金属层的表面出现氧化的情况，当显示面板的制程出现问题的区域重工时，保护层能够非常有效的避免清洗剂对阵列基板的金属层的直接腐蚀，使得金属层能够保持完好，从而避免产生断线问题，进而提升显示面板的重工成功率而降低报废成本。
其中，所述第二保护层上形成有透明电极层，所述第二保护层上设有开口，所述透明电极层通过所述开口与所述第二金属层相连接。这样，通过在第二保护层上设置开口，方便透明电极层与第二金属层进行连接，保证了显示面板良好的显示效果，在设置透明电极层之前对开口处的第二金属层采用氢离子进行轰击，能够有效的解决第二金属层表面氧化的问题，利用氢离子的氧化还原反应将第二金属层上的金属氧化物还原成金属。
其中，所述第一金属层和所述第二金属层采用铜、铝、银、金或上述金属的合金制成。
其中，所述第一保护层和所述第二保护层分别采用氮化硅层和/或氧化硅层。
其中，所述第一保护层和所述第二保护层分别堆叠设置为两层。
其中，所述第一保护层和所述第二保护层采用相同的材料。
其中，所述第一保护层和所述第二保护层采用不同的材料。
其中，所述在所述基板上形成金属层的方法包括：在所述基板上形成所述第一金属层；所述采用氢离子轰击所述金属层的方法包括：采用氢离子轰击所述第一金属层；所述在所述金属层上形成保护层的方法包括：在所述第一金属层上形成所述第一保护层。
这样，在设置第一保护层之前采用氢离子轰击第一金属层，能够有效的解决第一金属层表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决第一金属层制程到第一保护层制程之间的等待时间过短的问题。
其中，所述在所述基板上形成金属层的方法包括：在所述第一保护层上形成所述第二金属层；所述采用氢离子轰击所述金属层的方法包括：采用氢离子轰击所述第二金属层；所述在所述金属层上形成保护层的方法包括：在所述第二金属层上形成所述第二保护层。
这样，在设置第二保护层之前采用氢离子轰击第二金属层，能够有效的解决第二金属层表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决第二金属层制程到第二保护层制程之间的等待时间过短的问题。
其中，所述制作方法包括步骤：在所述基板上形成所述第一金属层；采用氢离子轰击所述第一金属层，形成所述扫描线、所述主动开关的栅极；在所述第一金属层上形成所述第一保护层、半导体层和所述第二金属层；采用氢离子轰击所述第二金属层，形成所述数据线、所述主动开关的源极和漏极；在所述第二金属层上形成所述第二保护层；以及在所述第二保护层上形成与所述漏极连接的所述透明电极层。
其中，所述制作方法包括步骤：在所述基板上形成所述第一金属层；采用氢离子轰击所述第一金属层，形成所述扫描线、所述主动开关的栅极；在所述第一金属层上形成所述第一保护层和半导体层；在所述半导体层上形成所述第二金属层；采用氢离子轰击所述第二金属层，形成所述数据线、所述主动开关的源极和漏极；在所述第二金属层上形成所述第二保护层；以及在 所述第二保护层上形成与所述漏极连接的所述透明电极层。
根据本申请的另一个方面，本申请还公开了一种阵列基板的制作设备，包括：进气口、解离装置、出气口以及涂层装置。所述进气口用于注入氢气和空气；所述解离装置用于解离氢气形成氢离子；所述出气口用于将氢离子释放轰击金属层；涂层装置用于在所述金属层上形成保护层；所述制作设备还包括壳体，所述进气口和所述出气口设在壳体上，所述解离装置设在所述壳体内，所述解离装置包括高压电极和陶瓷电极，所述接解离装置通过冷却套管与所述进气口相连接。这样，通过进气口注入氢气和空气的混合气体，有效的避免氢气浓度过高，从而进一步的保证显示面板的生产安全，氢气通过解离装置时，高压电极和陶瓷电极共同作用将氢气形成氢离子，氢离子通过出气口加速飞向金属层的表面，对显示面板上的金属层进行处理，能够有效的解决金属层的表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属。
其中，所述壳体包括防静电板，所述出气口设在所述防静电板上。这样，防静电板能够有效的隔绝静电，保证制作设备能够更好的将氢离子作用在金属层的表面上，氢离子通过出气口加速飞向金属层的表面，对显示面板上的金属层进行处理，能够有效的解决金属层的表面氧化的问题。
根据本申请的又一个方面，本申请还公开了一种显示面板，所述显示面板采用上述的阵列基板的制作方法制成。
根据本申请的又一个方面，本申请还公开了一种阵列基板的制作方法，所述制作方法包括：提供一基板；在所述基板上形成第一金属层；将氢气离解成氢原子；将所述氢原子电离形成氢离子；采用氢离子轰击所述第一金属层，形成扫描线、主动开关的栅极；在所述第一金属层上形成第一保护层和半导体层；在所述半导体层上形成第二金属层；采用氢离子轰击所述第二金属层，形成数据线、所述主动开关的源极和漏极；在所述第二金属层上形成第二保护层；以及在所述第二保护层上形成与所述漏极连接的透明电极层。
本申请由于在设置保护层之前采用氢离子轰击金属层，能够有效的解决金属层表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决金属层制程到保护层制程之间的等待时间过短的问题；采用氢离子轰击金属层来处理金属层表面的氧化物，能够更加高效的对金属 氧化物进行处理，有效的节约显示面板的生产时间，进一步的提高显示面板的生产效率；在氢离子轰击处理过的金属层上设置保护层，保护层的设置能够有效的对金属层进行保护，进一步的避免金属层的表面出现氧化的情况，而且金属层的侧边从微结构来看都有金属毛刺的现象，通过设置保护层的设置，能够有效的对金属层上的金属毛刺进行覆盖，有效的避免金属毛刺裸露在保护层外，同时采用保护层的设置能够很好的对制程出现问题的区域进行重工修复，而不需要将薄膜晶体管阵列基板进行报废处理，更加的绿色环保。
附图说明
图1是本申请实施例的阵列基板的制作方法流程图；
图2是本申请实施例的阵列基板的制作方法流程图；
图3是本申请实施例的显示面板的结构示意图；
图4是本申请实施例的显示面板的结构示意图；
图5是本申请实施例的阵列基板的制作方法流程图；
图6是本申请实施例的阵列基板的制作方法流程图；
图7是本申请实施例的阵列基板的制作方法流程图；
图8是本申请实施例的阵列基板的制作方法流程图；以及
图9是本申请实施例的制作设备的结构示意图。
具体实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地 包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和实施例对本申请作进一步说明。
如图1所示，一种阵列基板的制作方法，所述制作方法包括：
步骤S11：提供一基板；
步骤S12：在所述基板上形成金属层；
步骤S13：采用氢离子轰击所述金属层；
步骤S14：在所述金属层上形成保护层。
其中，所述基板上设有主动开关、扫描线以及与所述扫描线垂直设置的数据线，所述主动开关包括所述金属层，所述扫描线和所述数据线和所述主动开关耦接，所述金属层包括第一金属层、第二金属层、所述扫描线和所述数据线。
在设置保护层之前采用氢离子轰击金属层，能够有效的解决金属层表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决金属层制程到保护层制程之间的等待时间过短的问题；采用氢离子轰击金属层来处理金属层表面的氧化物，能够更加高效的对金属氧化物进行处理，有效的节约显示面板的生产时间，进一步的提高显示面板的生产效率；在氢离子轰击处理过的金属层上设置保护层，保护层的设置能够有效的 对金属层进行保护，进一步的避免金属层的表面出现氧化的情况，而且金属层的侧边从微结构来看都有金属毛刺的现象，通过设置保护层的设置，能够有效的对金属层上的金属毛刺进行覆盖，有效的避免金属毛刺裸露在保护层外，同时采用保护层的设置能够很好的对制程出现问题的区域进行重工修复，而不需要将薄膜晶体管阵列基板进行报废处理，更加的绿色环保；当然可采用含有氢离子的混合气体轰击金属层，也可以采用含有氢离子的等离子态轰击金属层。
金属层采用铜、铝、银、金或上述金属的合金制成，可选的采用纯铜制成，纯铜具有良好的导电性能，电阻率较低；铜是不太活泼的金属，在常温下不与干燥空气中的氧化合；而且铜熔点较低，容易再熔化、再冶炼，方便回收利用；同时铜的储量大，方便原料的采购，能够进一步的控制生产成本。
如图2所示，所述采用氢离子轰击金属层的方法包括：
步骤S21：将氢气离解成氢原子；
步骤S22：将所述氢原子电离形成氢离子；
步骤S23：采用所述氢离子轰击金属层。
通过显示面板的制作设备2，将混合气体中的氢气的分子离解成两个氢原子，进一步的将氢原子电离形成成为带正电荷的氢离子和带负电荷的电子，通过电离的氢离子轰击金属层的表面，能够有效的解决金属层的表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决金属层制程到保护层制程之间的等待时间过短的问题；示例的金属层采用纯铜制成，氢离子与氧化铜反应，利用氢离子氧化还原反应将氧化铜还原成金属铜，有效的避免氧化铜造成金属层的接触不良，进一步的保证了显示面板良好的显示效果；然后通过气相沉积法或化学气相沉积法设置保护层，保护层的设置能够有效的对金属层进行保护，进一步的避免金属层的表面出现氧化的情况。
如图3所示，保护层包括第一保护层12和第二保护层15，第一金属层11设在基板1上，第一保护层12设在第一金属层11上，第二金属层14设在第一保护层12上，第二保护层15设在第二金属层14上，所述第二金属层14包括源极层141和漏极层142之间设有沟道18，半导体层13设在沟道18底部，通过第一保护层12和第二保护层15的设置，能够有效的对金属层进行 保护，进一步的避免金属层的表面出现氧化的情况，当显示面板的制程出现问题的区域重工时，保护层能够非常有效的避免清洗剂对阵列基板的金属层的直接腐蚀，使得金属层能够保持完好，从而避免产生断线问题，进而提升显示面板的重工成功率而降低报废成本，而且金属层的侧边从微结构来看都有金属毛刺的现象，通过设置第一保护层12和第二保护层15，能够更好的对金属层上的金属毛刺进行覆盖，非常有效的防止金属毛刺裸露在保护层外，使得保护层能够更好的对金属层进行保护；同时采用保护层的设置能够很好的对制程出现问题的区域进行重工修复，而不需要将薄膜晶体管阵列基板进行报废处理，更加的绿色环保。
保护层为氧化硅层，即保护层采用氧化硅材料制成，在化学气相沉积(Chemical Vapor Deposition，CVD)技术将氧化硅沉积到金属层进行之前，采用氢离子轰击金属层，能够有效的解决金属层表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决金属层制程到保护层制程之间的等待时间过短的问题，在金属层上进行一次化学气相沉积后，等待第一层氧化硅层冷却凝固形成第一层第一保护层12，在第一层第一保护层12进行第二次化学气相沉积后形成第二层第一保护层12，重复以上步骤，使得金属层上沉积至少两层氧化硅层，从而更好的对金属层上进行覆盖，非常有效的防止金属毛刺裸露在保护层外，使得保护层能够更好的对金属层进行保护，氧化硅的化学性质比较稳定，不会与氢氧化钾溶液进行反应，有效的避免清洗剂对金属层的腐蚀破坏，能够非常好的对金属层进行保护；而且通过进行多次化学气相沉积形成至少两层氧化硅层，中途不需要额外更换的原材料，也不需要额外更换设备，降低原材料成本、存储成本，物料清单不需要增加新的材料，方便流程管理和采购，同时化学气相沉积技术成熟，能够很好的控制氧化硅的使用量，进一步的减低了生产制造成本，使得显示面板具有更强的市场竞争力；当然第二保护层15也可以采用同样的方法设置两层。
当然保护层也可以为氮化硅层，即保护层采用氮化硅材料制成，在化学气相沉积技术将氮化硅沉积到金属层进行之前，采用氢离子轰击金属层，能够有效的解决金属层表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决金属层制程到保护层制程之间的等待时 间过短的问题，在金属层上进行一次化学气相沉积后，等待第一层氮化硅层冷却凝固形成第一层第一保护层12，在第一层第一保护层12进行第二次化学气相沉积后形成第二层第一保护层12，重复以上步骤，使得金属层上沉积至少两层氮化硅层，从而更好的对金属层上进行覆盖，非常有效的防止金属毛刺裸露在保护层外，使得保护层能够更好的对金属层进行保护，氮化硅不会与氢氧化钾溶液进行反应，有效的避免清洗剂对金属层的腐蚀破坏，能够非常好的对金属层进行保护，氮化硅是一种超硬物质，且氮化硅材料耐磨损，高温时抗氧化，还能抵抗冷热冲击，而且通过进行多次化学气相沉积形成至少两层氮化硅层，中途不需要额外更换的原材料，也不需要额外更换设备，降低原材料成本、存储成本，物料清单不需要增加新的材料，方便流程管理和采购，同时化学气相沉积技术成熟，能够很好的控制氮化硅的使用量，进一步的减低了生产制造成本，使得显示面板具有更强的市场竞争力；当然第二保护层15也可以采用同样的方法设置两层。
如图4所示，作为本申请的又一个实施例，保护层包括氮化硅层和氧化硅层，在化学气相沉积技术将氧化硅沉积到金属层进行之前，采用氢离子轰击金属层，能够有效的解决金属层表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决金属层制程到保护层制程之间的等待时间过短的问题，然后通过化学气相沉积技术将氧化硅沉积到金属层上，等待氧化硅层冷却凝固形成第一层第一保护层12，然后化学气相沉积技术将氮化硅沉积到氧化硅层上形成第二层第一保护层12，当然也可以是先设置氮化硅层作为第一层第一保护层12，再将氧化硅层覆盖在氮化硅层上形成第二层第一保护层12，通过氮化硅层和氧化硅层堆叠设置，使得保护层能够更好的附着在金属层上，能够更好的对金属层上的金属毛刺进行覆盖，非常有效的防止金属毛刺裸露在保护层外，使得保护层能够更好的对金属层进行保护，能够非常有效的避免清洗剂对阵列基板的金属层的直接腐蚀，使得金属层能够保持完好，从而避免产生断线问题，进一步的提高了显示面板的耐用性；当然第二保护层15也可以采用同样的氮化硅层和氧化硅层的堆叠设置两层。
其中，第二保护层15上形成有透明电极层17，第二保护层15上设有开口16，透明电极层17通过开口16与第二金属层14相连接，通过在第二保护 层15上设置开口16，方便透明电极层17与第二金属层14进行连接，保证了显示面板良好的显示效果，在设置透明电极层17之前对开口16处的第二金属层14采用氢离子进行轰击，能够有效的解决第二金属层14表面氧化的问题，利用氢离子的氧化还原反应将第二金属层14上的金属氧化物还原成金属，同时能够有效解决第二金属层14制程到透明电极层17制程之间的等待时间过短的问题；然后在轰击过的第二金属层14上设置透明电极层17，透明电极层17能够有效的对开口16处的第二金属层14进行保护，进一步的避免金属层的表面出现氧化的情况。
如图5所示，所述在基板1上形成金属层的方法包括：
步骤S31：在基板上形成第一金属层；
所述采用氢离子轰击金属层的方法包括：
步骤S32：采用氢离子轰击所述第一金属层；
所述在金属层上设置保护层的方法包括：
步骤S33：在所述第一金属层上形成第一保护层。
在设置第一保护层12之前采用氢离子轰击第一金属层11，能够有效的解决第一金属层11表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决第一金属层11制程到第一保护层12制程之间的等待时间过短的问题；在氢离子轰击处理过的第一金属层11上设置第一保护层12，第一保护层12的设置能够有效的对第一金属层11进行保护，进一步的避免第一金属层11的表面出现氧化的情况，而且第一金属层11的侧边从微结构来看都有金属毛刺的现象，通过设置第一保护层12的设置，能够有效的对第一金属层11上的金属毛刺进行覆盖，有效的避免金属毛刺裸露在第一保护层12外，同时采用第一保护层12的设置能够很好的对制程出现问题的区域进行重工修复，而不需要将薄膜晶体管阵列基板进行报废处理，更加的绿色环保。
如图6所示，所述在基板1上形成金属层的方法包括：
步骤S41：在第一保护层上形成第二金属层；
所述采用氢离子轰击金属层的方法包括：
步骤S42：采用氢离子轰击所述第二金属层；
所述在金属层上设置保护层的方法包括：
步骤S43：在所述第二金属层上形成第二保护层。
在设置第二保护层15之前采用氢离子轰击第二金属层14，能够有效的解决第二金属层14表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决第二金属层14制程到第二保护层15制程之间的等待时间过短的问题；在氢离子轰击处理过的第二金属层14上设置第二保护层15，第二保护层15的设置能够有效的对第二金属层14进行保护，进一步的避免第二金属层14的表面出现氧化的情况，而且第二金属层14的侧边从微结构来看都有金属毛刺的现象，通过设置第二保护层15的设置，能够有效的对第二金属层14上的金属毛刺进行覆盖，有效的避免金属毛刺裸露在第二保护层15外，同时采用第二保护层15的设置能够很好的对制程出现问题的区域进行重工修复，而不需要将薄膜晶体管阵列基板进行报废处理，更加的绿色环保。
如图7所示，阵列基板的制作方法包括步骤：
步骤S51：在所述基板上形成第一金属层；
步骤S52：采用氢离子轰击所述第一金属层，形成扫描线、所述主动开关的栅极；
步骤S53：在所述第一金属层上形成第一保护层、半导体层和第二金属层；
步骤S54：采用氢离子轰击所述第二金属层，形成数据线、所述主动开关的源极和漏极；
步骤S55：在所述第二金属层上形成第二保护层；
步骤S56：在所述第二保护层上形成与所述漏极连接的透明电极层。
第一光罩制程：首先对基板1进行清洗，在清洗后的基板1上溅镀第一金属材料层，完成第一金属材料层的溅镀后进行成膜前清洗，然后在清洗后的第一金属材料层上涂布光阻，采用第一光罩对光阻进行对准并曝光，用显影液在第一金属材料层显影获得第一金属层11的图案，然后采用蚀刻液对第一金属材料层进行蚀刻获得第一金属层11，对残留的光阻进行去除，完成第一光罩制程检查。
第二光罩制程：首先对完成第一光罩制程的基板1进行清洗，在第一金属层11上通过化学气相沉积技术将第一保护层12沉积到第一金属层11上，在清洗后的第一保护层12上形成半导体材料层，完成半导体材料层的溅镀后 进行成膜前清洗，然后在清洗后的半导体材料层上形成第二金属材料层，然后在清洗后的第二金属材料层上涂布光阻，采用第二光罩对光阻进行对准并曝光，用显影液在第二金属材料层显影获得第二金属层14的图案，然后采用蚀刻液对半导体材料层进行蚀刻获得第二金属层14，采用第二光罩对光阻进行对准并曝光，在半导体材料层显影获得半导体层13的图案，然后对半导体材料层进行干蚀刻获得半导体层13，对残留的光阻进行去除，完成第二光罩制程检查。
在第二光罩制程设置第一保护层12之前，采用氢离子轰击第一金属层11，能够有效的解决第一金属层11表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决第一金属层11到第一保护层12之间的等待时间过短的问题。
第三光罩制程：首先对完成第二光罩制程的基板1进行清洗，在清洗后的第二金属层14上形成第二保护材料层，然后在第二金属材料层上涂布光阻，采用第三光罩对光阻进行对准并曝光，用显影液在第二保护材料层显影获得第二保护层15的图案，然后采用蚀刻液对第二保护材料层进行蚀刻获得第二保护层15，对残留的光阻进行去除，完成第三光罩制程检查。
在第三光罩制程设置第二保护层15之前，采用氢离子轰击第二金属层14，能够有效的解决第二金属层14表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决第二金属层14到第二保护层15之间的等待时间过短的问题。
第四光罩制程：首先对完成第三光罩制程的基板1进行清洗，在清洗后的第二保护层15上形成透明电极材料层，然后在透明电极材料层上涂布光阻，采用第四光罩对光阻进行对准并曝光，用显影液在透明电极材料层显影获得透明电极层17的图案，然后采用蚀刻液对透明电极材料层进行蚀刻获得透明电极层17，对残留的光阻进行去除，完成第四光罩制程检查。
如图8所示，阵列基板的制作方法包括步骤：
步骤S61：在所述基板上形成第一金属层；
步骤S62：采用氢离子轰击所述第一金属层，形成扫描线、所述主动开关的栅极；
步骤S63：在所述第一金属层上形成第一保护层和半导体层；
步骤S64：在所述半导体层上形成第二金属层；
步骤S65：采用氢离子轰击所述第二金属层，形成数据线、所述主动开关的源极和漏极；
步骤S66：在所述第二金属层上形成第二保护层；
步骤S67：在所述第二保护层上形成与所述漏极连接的透明电极层。
第一光罩制程：首先对基板1进行清洗，在清洗后的基板1上溅镀第一金属材料层，完成第一金属材料层的溅镀后进行成膜前清洗，然后在清洗后的第一金属材料层上涂布光阻，采用第一光罩对光阻进行对准并曝光，用显影液在第一金属材料层显影获得第一金属层11的图案，然后采用蚀刻液对第一金属材料层进行蚀刻获得第一金属层11，对残留的光阻进行去除，完成第一光罩制程检查。
第二光罩制程：首先对完成第一光罩制程的基板1进行清洗，在第一金属层11上通过化学气相沉积技术将第一保护层12沉积到第一金属层11上，在清洗后的第一保护层12上形成半导体材料层，完成半导体材料层的溅镀后进行成膜前清洗，然后在清洗后的半导体材料层上涂布光阻，采用第二光罩对光阻进行对准并曝光，用显影液在半导体材料层显影获得半导体层13的图案，然后采用蚀刻液对半导体材料层进行蚀刻获得半导体层13，对残留的光阻进行去除，完成第二光罩制程检查。
在第二光罩制程设置第一保护层12之前，采用氢离子轰击第一金属层11，能够有效的解决第一金属层11表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决第一金属层11到第一保护层12之间的等待时间过短的问题。
第三光罩制程：首先对完成第二光罩制程的基板1进行清洗，在清洗后的半导体层13上形成第二金属材料层，完成第二金属材料层的溅镀后进行成膜前清洗，然后在清洗后的第二金属材料层上涂布光阻，采用第三光罩对光阻进行对准并曝光，用显影液在第二金属材料层显影获得第二金属层14的图案，然后采用蚀刻液对第二金属材料层进行蚀刻获得第二金属层14，对残留的光阻进行去除，完成第三光罩制程检查。
第四光罩制程：首先对完成第三光罩制程的基板1进行清洗，在清洗后的第二金属层14上形成第二保护材料层，然后在第二金属材料层上涂布光阻， 采用第四光罩对光阻进行对准并曝光，用显影液在第二保护材料层显影获得第二保护层15的图案，然后采用蚀刻液对第二保护材料层进行蚀刻获得第二保护层15，对残留的光阻进行去除，完成第四光罩制程检查。
在第四光罩制程设置第二保护层15之前，采用氢离子轰击第二金属层14，能够有效的解决第二金属层14表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决第二金属层14到第二保护层15之间的等待时间过短的问题。
第五光罩制程：首先对完成第四光罩制程的基板1进行清洗，在清洗后的第二保护层15上形成透明电极材料层，然后在透明电极材料层上涂布光阻，采用第五光罩对光阻进行对准并曝光，用显影液在透明电极材料层显影获得透明电极层17的图案，然后采用蚀刻液对透明电极材料层进行蚀刻获得透明电极层17，对残留的光阻进行去除，完成第五光罩制程检查。
如图9所示，根据本申请的另一个方面，本申请还公开了一种显示面板的制作设备2，包括：
进气口22，用于注入氢气和空气；
解离装置24，用于解离氢气形成氢离子；
出气口23，用于将氢离子释放轰击金属层；
涂层装置29，用于在金属层上形成保护层；
制作设备2还包括壳体21，涂层装置29、进气口22和出气口23设在壳体21上，解离装置24设在壳体21内，解离装置24包括高压电极25和陶瓷电极26，解离装置24通过冷却套管27与进气口22相连接。
通过进气口22注入氢气和空气的混合气体，有效的避免氢气浓度过高，从而进一步的保证显示面板的生产安全，氢气通过解离装置24时，高压电极25和陶瓷电极26共同作用将氢气形成氢离子，氢离子通过出气口23加速飞向金属层的表面，对显示面板上的金属层进行处理，能够有效的解决金属层的表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决金属层制程到保护层制程之间的等待时间过短的问题。
其中，所述壳体21包括防静电板28，所述出气口23设在所述防静电板28上，所述出气口23处会产生电弧现象，防静电板28能够有效的隔绝静电，保证制作设备2能够更好的将氢离子作用在金属层的表面上，氢离子通过出 气口23加速飞向金属层的表面，对显示面板上的金属层进行处理，能够有效的解决金属层的表面氧化的问题，利用氢离子的氧化还原反应将金属氧化物还原成金属，同时能够有效解决金属层制程到保护层制程之间的等待时间过短的问题。
根据本申请的另一个方面，本申请还公开了一种显示面板，所述显示面板采用上述的阵列基板的制作方法制成。
在某些实施例中，显示面板例如为液晶显示面板、OLED显示面板、QLED显示面板、曲面显示面板或其他显示面板。
以上内容是结合具体的实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (20)

  1. 一种阵列基板的制作方法，包括：
    提供一基板；
    在所述基板上形成第一金属层；
    将氢气离解成氢原子；
    将所述氢原子电离形成氢离子；
    采用氢离子轰击所述第一金属层，形成扫描线、主动开关的栅极；
    在所述第一金属层上形成第一保护层和半导体层；
    在所述半导体层上形成第二金属层；
    采用氢离子轰击所述第二金属层，形成数据线、所述主动开关的源极和漏极；
    在所述第二金属层上形成第二保护层；以及
    在所述第二保护层上形成与所述漏极连接的透明电极层。
  2. 如权利要求1所述的阵列基板的制作方法，其中所述采用氢离子轰击所述第二金属层的方法包括：
    将氢气离解成氢原子；
    将所述氢原子电离形成氢离子；以及
    采用所述氢离子轰击所述第二金属层。
  3. 如权利要求1所述的阵列基板的制作方法，其中所述第二保护层上设有开口，所述透明电极层通过所述开口与所述第二金属层相连接。
  4. 如权利要求1所述的阵列基板的制作方法，其中所述第一金属层和所述第二金属层采用铜、铝、银、金或上述金属的合金制成。
  5. 如权利要求1所述的阵列基板的制作方法，其中所述第一保护层和所述第二保护层分别采用氮化硅层和/或氧化硅层。
  6. 如权利要求5所述的阵列基板的制作方法，其中所述第一保护层和所述第二保护层分别堆叠设置为两层。
  7. 如权利要求5所述的阵列基板的制作方法，其中所述第一保护层和所述第二保护层采用相同的材料。
  8. 如权利要求5所述的阵列基板的制作方法，其中所述第一保护层和所述第二保护层采用不同的材料。
  9. 一种阵列基板的制作方法，包括：
    提供一基板；
    在所述基板上形成金属层；
    采用氢离子轰击所述金属层；以及
    在所述金属层上形成保护层；
    其中，所述基板上设有主动开关、扫描线以及与扫描线垂直设置的数据线，所述主动开关包括所述金属层，所述扫描线和所述数据线和所述主动开关耦接，所述金属层包括第一金属层、第二金属层、所述扫描线和所述数据线。
  10. 如权利要求9所述的阵列基板的制作方法，其中所述采用氢离子轰击所述金属层的方法包括：
    将氢气离解成氢原子；
    将所述氢原子电离形成氢离子；以及
    采用所述氢离子轰击所述金属层。
  11. 如权利要求9所述的阵列基板的制作方法，其中所述保护层包括第一保护层和第二保护层，所述第一金属层设在所述基板上，所述第一保护层设在所述第一金属层上，所述第二金属层设在所述第一保护层上，所述第二保护层设在所述第二金属层上。
  12. 如权利要求11所述的阵列基板的制作方法，其中所述第二保护层上形成有透明电极层，所述第二保护层上设有开口，所述透明电极层通过所述开口与所述第二金属层相连接。
  13. 如权利要求11所述的阵列基板的制作方法，其中所述在所述基板上形成金属层的方法包括：
    在所述基板上形成所述第一金属层；
    所述采用氢离子轰击所述金属层的方法包括：
    采用氢离子轰击所述第一金属层；
    所述在所述金属层上形成保护层的方法包括：
    在所述第一金属层上形成所述第一保护层。
  14. 如权利要求11所述的阵列基板的制作方法，其中所述在所述基板上形成金属层的方法包括：
    在所述第一保护层上形成所述第二金属层；
    所述采用氢离子轰击所述金属层的方法包括：
    采用氢离子轰击所述第二金属层；
    所述在所述金属层上形成保护层的方法包括：
    在所述第二金属层上形成所述第二保护层。
  15. 如权利要求12所述的阵列基板的制作方法，其中所述制作方法包括步骤：
    在所述基板上形成所述第一金属层；
    采用氢离子轰击所述第一金属层，形成所述扫描线、所述主动开关的栅极；
    在所述第一金属层上形成所述第一保护层、半导体层和所述第二金属层；
    采用氢离子轰击所述第二金属层，形成所述数据线、所述主动开关的源极和漏极；
    在所述第二金属层上形成所述第二保护层；以及
    在所述第二保护层上形成与所述漏极连接的所述透明电极层。
  16. 如权利要求12所述的阵列基板的制作方法，其中所述制作方法包括步骤：
    在所述基板上形成所述第一金属层；
    采用氢离子轰击所述第一金属层，形成所述扫描线、所述主动开关的栅极；
    在所述第一金属层上形成所述第一保护层和半导体层；
    在所述半导体层上形成所述第二金属层；
    采用氢离子轰击所述第二金属层，形成所述数据线、所述主动开关的源极和漏极；
    在所述第二金属层上形成所述第二保护层；以及
    在所述第二保护层上形成与所述漏极连接的所述透明电极层。
  17. 如权利要求9所述的阵列基板的制作方法，其中所述第一金属层和所述第二金属层采用铜、铝、银、金或上述金属的合金制成。
  18. 如权利要求11所述的阵列基板的制作方法，其中所述第一保护层和所述第二保护层分别采用氮化硅层和/或氧化硅层。
  19. 如权利要求18所述的阵列基板的制作方法，其中所述第一保护层和所述第二保护层分别堆叠设置为两层。
  20. 一种阵列基板的制作设备，包括：
    进气口，用于注入氢气和空气；
    解离装置，用于解离氢气形成氢离子；
    出气口，用于将氢离子释放轰击金属层；以及
    涂层装置，用于在所述金属层上形成保护层；
    其中，所述制作设备还包括壳体，所述进气口和所述出气口设在壳体上，所述解离装置设在所述壳体内，所述解离装置包括高压电极和陶瓷电极，所述解离装置通过冷却套管与所述进气口相连接；所述壳体包括防静电板，所述出气口设在所述防静电板上。
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