WO2019037235A1 - 一种蒸发源装置 - Google Patents

一种蒸发源装置 Download PDF

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Publication number
WO2019037235A1
WO2019037235A1 PCT/CN2017/107998 CN2017107998W WO2019037235A1 WO 2019037235 A1 WO2019037235 A1 WO 2019037235A1 CN 2017107998 W CN2017107998 W CN 2017107998W WO 2019037235 A1 WO2019037235 A1 WO 2019037235A1
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WIPO (PCT)
Prior art keywords
evaporation source
evaporation
shielding plate
source device
substrate
Prior art date
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Ceased
Application number
PCT/CN2017/107998
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English (en)
French (fr)
Inventor
沐俊应
李相烨
李先杰
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/575,615 priority Critical patent/US20190062902A1/en
Publication of WO2019037235A1 publication Critical patent/WO2019037235A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

Definitions

  • the present invention relates to the field of display technology, and in particular to an evaporation source device.
  • the display technology Compared with the current mainstream liquid crystal display technology, the display technology has the advantages of high contrast, wide color gamut, flexibility, lightness and energy saving, and is gradually becoming a flexible wearable device such as a mobile device such as a smart phone or a tablet computer, a smart watch, or a large-sized curved television. And the popularity of white light and other fields.
  • OLED technology mainly includes small molecule OLED technology based on vacuum evaporation technology and polymer OLED based on solution process.
  • the vapor deposition machine is a small molecule OLED that has been mass-produced at present.
  • the main equipment for device production, the core part of the device is the evaporation source device, and the evaporation source device is divided into a point evaporation source, a line evaporation source, and a surface evaporation source.
  • Line evaporation source is currently the most important OLED Mass production technology is mainly divided into integrated line evaporation source and conveyor line evaporation source.
  • the existing point evaporation source is widely used in R&D and mass production equipment, in an evaporation chamber, evaporation source 11-14 A circular arc is distributed on the bottom of the cavity, and a limiting plate 16 is disposed between each evaporation source to define an evaporating gas flow reaching range.
  • the substrate 10 is located above the evaporation source 11-14, and can be along the cavity and the substrate during vapor deposition. The center position is rotated to increase film thickness uniformity.
  • Each evaporation source controls the start or end time of the evaporation source coating through a separate evaporation source shield. Evaporation source shielding plate 15 The rotation is controlled mainly by the cylinder, so that the existing evaporation source has only two states of opening and closing, so it is difficult to control the coating rate and the doping ratio in the coating process.
  • An object of the present invention is to provide an evaporation source device capable of controlling the plating rate of an evaporation source during a coating process.
  • the present invention provides an evaporation source device,
  • the evaporation source device is configured to perform an evaporation operation on the substrate, and the evaporation source device includes:
  • An evaporation source disposed below the substrate
  • An evaporation source shielding plate disposed between the evaporation source and the substrate;
  • a driving component connected to the evaporation source shielding plate;
  • the driving component is configured to drive the evaporation source shielding plate to rotate relative to the evaporation source, and control a rotation rate of the evaporation source shielding plate during the coating process, Adjusting an evaporation rate of the evaporation source;
  • the driving component is further configured to control a rotation period of the evaporation source shielding plate during a coating process, wherein a rotation period of the evaporation source shielding plate during the coating process is according to the substrate Rotation period setting;
  • the evaporation source device further includes an evaporation chamber, the evaporation source, the evaporation source shielding plate, and the substrate are located in the evaporation chamber.
  • the driving component is configured to change an occlusion area between the evaporation source shielding plate and the evaporation source by controlling a rotation rate of the evaporation source shielding plate during a coating process to adjust an evaporation rate of the evaporation source .
  • the operating state of the evaporation source device includes a fully closed state, a partially open state, and a fully open state.
  • the evaporation source shielding plate completely blocks the evaporation source
  • the evaporation source shielding plate partially blocks the evaporation source
  • the evaporation source shielding plate does not block the evaporation source when the evaporation source device is in the fully open state.
  • the evaporation source device further includes a drive shaft disposed at a top end of the drive shaft, and a bottom end of the drive shaft is coupled to the drive member.
  • the evaporation rate of the evaporation source shielding plate during the coating process is set according to the rotation rate of the substrate.
  • the evaporation source device includes at least two evaporation sources and at least two evaporation source shielding plates, each evaporation source is correspondingly disposed with an evaporation source shielding plate, and a restriction plate is disposed between two adjacent evaporation sources, the limitation The plate is used to limit the evaporation zone of the evaporation source.
  • the driving member is further configured to control a doping ratio of a plating material in the at least two evaporation sources.
  • the present invention provides an evaporation source device for performing an evaporation operation on a substrate, the evaporation source device comprising:
  • An evaporation source disposed below the substrate
  • An evaporation source shielding plate disposed between the evaporation source and the substrate;
  • a driving component connected to the evaporation source shielding plate; the driving component is configured to drive the evaporation source shielding plate to rotate relative to the evaporation source, and control a rotation rate of the evaporation source shielding plate during the coating process, The evaporation rate of the evaporation source is adjusted.
  • the driving component is configured to change an occlusion area between the evaporation source shielding plate and the evaporation source by controlling a rotation rate of the evaporation source shielding plate during a coating process to adjust an evaporation rate of the evaporation source .
  • the operating state of the evaporation source device includes a fully closed state, a partially open state, and a fully open state.
  • the evaporation source shielding plate completely blocks the evaporation source
  • the evaporation source shielding plate partially blocks the evaporation source
  • the evaporation source shielding plate does not block the evaporation source when the evaporation source device is in the fully open state.
  • the evaporation source device further includes a drive shaft disposed at a top end of the drive shaft, and a bottom end of the drive shaft is coupled to the drive member.
  • the evaporation rate of the evaporation source shielding plate during the coating process is set according to the rotation rate of the substrate.
  • the driving component is further configured to control a rotation period of the evaporation source shielding plate during a coating process, and a rotation period of the evaporation source shielding plate during the coating process is set according to a rotation period of the substrate.
  • the evaporation source device includes at least two evaporation sources and at least two evaporation source shielding plates, each evaporation source is correspondingly disposed with an evaporation source shielding plate, and a restriction plate is disposed between two adjacent evaporation sources, the limitation The plate is used to limit the evaporation zone of the evaporation source.
  • the driving member is further configured to control a doping ratio of a plating material in the at least two evaporation sources.
  • the evaporation source device further includes an evaporation chamber, the evaporation source, the evaporation source shielding plate, and the substrate are all located in the evaporation chamber.
  • the evaporation source device of the invention improves the existing driving component, so that the evaporation rate of the driving component is controlled during the coating process, thereby controlling the evaporation source shielding plate to rotate at a set rate during the coating process, thereby controlling the corresponding The evaporation rate of the evaporation source. Further, when two or more evaporation sources are co-deposited, it is also possible to control the doping ratio of the plating material of the corresponding evaporation source.
  • Figure 1 is a plan view of a conventional evaporation source device
  • FIG. 2 is a schematic structural view of an evaporation source device of the present invention
  • Figure 3 is a first plan view showing the position of the evaporation source shielding plate in the evaporation source device of the present invention
  • FIG 4 is a second top view of the position of the evaporation source shielding plate in the evaporation source device of the present invention.
  • Fig. 5 is a graph showing the relationship between the thicknesses and doping ratios of two coating materials in the evaporation source device of the present invention.
  • the evaporation source device of this embodiment is used for performing vapor deposition operation on the substrate, as shown in FIG. 2
  • the evaporation source device includes two evaporation sources 21, 22 disposed in the vapor deposition chamber, two evaporation source shielding plates 24, and a driving member 25.
  • the evaporation sources 21, 22 are respectively disposed below the substrate 20.
  • An evaporation source shielding plate is provided for each evaporation source.
  • An evaporation source shield 24 on the left side is disposed between the evaporation source 21 and the substrate 20; and an evaporation source shield 24 on the right side is disposed between the evaporation source 22 and the substrate 20.
  • the limiting plate 23 is used to limit the evaporation sources 21, 22 The evaporation zone.
  • the evaporation range of the evaporative gas stream is indicated by the dotted line in the figure.
  • the driving component 25 is electrically connected to the evaporation source shielding plate 24; the driving component 24 is for driving the evaporation source shielding plate 24
  • the rotation rate of the evaporation source shutter 24 during the coating process is controlled relative to the corresponding evaporation source to adjust the evaporation rate of the evaporation source.
  • the drive component 25 is a motor.
  • the evaporation source device may further include a drive shaft 26, the evaporation source shielding plate 24 being disposed on the drive shaft 26
  • the bottom end of the drive shaft 26 is connected to the drive member 25.
  • One end of the evaporation source shutter 24 is disposed at the top end of the drive shaft 26.
  • the driving component 25 The evaporation source shield 24 can be driven to drive the shaft 26 to rotate.
  • the evaporation source shielding plate 24 can be completely closed from a certain rate (such as a constant speed rotation).
  • S1 transitions to the fully open state S3, and the middle undergoes partial open state S2; then transitions from fully open state S4 to fully closed state at a certain rate (such as constant speed rotation)
  • the partial open state S5 is completed, thereby completing an action cycle.
  • the evaporation source shield on the right side is similar to the evaporation source shield on the left side.
  • the operating state of the evaporation source device includes a fully closed state, a partially open state, and a fully open state.
  • the evaporation source shielding plate 24 completely obscures the evaporation source when the evaporation source device is in a fully closed state. When the evaporation source device is in a partially open state, the evaporation source shielding plate 24 partially blocks the evaporation source 21; when the evaporation source device is in a fully open state, the evaporation source shielding plate 24 The evaporation source 21 is not blocked.
  • the driving member 25 is specifically configured to control the evaporation source shielding plate 24 The rate of rotation during the coating process to change the evaporation source shield 24 and the evaporation source 21 The occlusion area between them adjusts the evaporation rate of the evaporation source.
  • the occlusion area is the largest, at which time the evaporation rate is the lowest; when the evaporation source device is in a partially open state, the evaporation source shielding plate 24 and the evaporation source 21
  • the occlusion area between is between the maximum value and the minimum value, at which time the evaporation rate is at an intermediate value (ie, between the highest rate and the lowest rate); when the evaporation source device is in a fully open state, the evaporation source is occluded Plate 24 and evaporation source
  • the occlusion area is the smallest between 21 and the evaporation rate is the highest.
  • the rate of rotation of the evaporation source shutter 24 during the coating process is set according to the rotation rate of the substrate 20.
  • the driving member 25 is further configured to control a rotation period of the evaporation source shielding plate 24 during the coating process, and the evaporation source shielding plate 24
  • the rotation period in the coating process is set in accordance with the rotation period of the substrate 20.
  • the rotation rate of the substrate is 6 ⁇ 10RPM (rev/min), and the rotation rate and period of the evaporation source shielding plate 24 can be based on the substrate. 20
  • the rate and period of rotation during the evaporation process are set to optimize the doping ratio and coating uniformity.
  • the driving member 25 is also used to control the doping ratio of the plating material in the two evaporation sources.
  • the evaporation source shutter 24 continues to rotate at a set speed (eg, at a constant speed). (1cycle).
  • the substrate 20 is rotated 360 o for one revolution, and the rotation speed of the substrate 20 (for example, 10 RPM) is used, and the rotation speed of the substrate is 60 o /sec.
  • the above is one cycle (0 to 90 o of substrate rotation), and four cycles are repeated to complete the rotation of the substrate 20 one turn.
  • the evaporation source shutter 24 continues to rotate at a set speed (eg, at a constant speed). (1cycle), as shown in Figure 4.
  • the substrate 20 is rotated 360 o for one rotation, and the rotation speed of the substrate 20 (for example, 10 RPM) is used, and the rotation speed of the substrate 20 is 60 o. /sec.
  • the speed of the evaporation source shutter 24 can be set according to this speed during the rotation of the substrate 20 to 0 ⁇ 30 o, for example, 30 o /cycle , that is, the evaporation source shutter 24 rotates at 30/60 sec/cycle.
  • the opening and closing state of the evaporation source shielding plate 24 is as shown in S8-S7-S6-S7-S8 .
  • the evaporation source shutter 24 is then kept open while the substrate 20 is rotated to 60 o.
  • the evaporation source device of the present invention may also include an evaporation source and an evaporation source shielding plate, or include more than two evaporation sources and an evaporation source shielding plate.
  • the drive component is also for controlling the doping ratio of the coating material in at least two evaporation sources.
  • A, B Represents two coating materials, the abscissa indicates the thickness, and the ordinate indicates the doping ratio, A, B
  • the two coating materials are respectively located in two evaporation sources, and it can be seen that the evaporation source device of the present invention can flexibly set the doping ratio of the two materials in the thickness direction ( ). In the prior art, only the proportional doping is performed in the doping process, that is, the ratios of the two coating materials are approximately equal.
  • the evaporation source device of the invention improves the existing driving component, so that the evaporation rate of the driving component is controlled during the coating process, thereby controlling the evaporation source shielding plate to rotate at a set rate during the coating process, thereby controlling the corresponding The evaporation rate of the evaporation source. Further, when two or more evaporation sources are co-deposited, it is also possible to control the doping ratio of the plating material of the corresponding evaporation source.

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种蒸发源装置，其中蒸发源装置用于对基板（20）进行蒸镀操作，蒸发源装置包括：蒸发源（21，22），设置在基板（20）的下方；蒸发源遮挡板（24），设置在蒸发源（21，22）和基板（20）之间；驱动部件（25），与蒸发源遮挡板（24）连接；驱动部件（25）用于驱动蒸发源遮挡板（24）相对于蒸发源（21，22）旋转，并控制蒸发源遮挡板（24）在镀膜过程中的旋转速率，以调整蒸发源（21，22）的蒸镀速率；驱动部件（25）还用于控制蒸发源遮挡板（24）在镀膜过程中的旋转周期，蒸发源遮挡板（24）在镀膜过程中的旋转周期根据基板（20）的旋转周期设置；其中蒸发源装置还包括蒸镀腔室，蒸发源（21，22）、蒸发源遮挡板（24）以及基板（20）都位于蒸镀腔室内。还公开了另一种蒸发源装置。

Description

一种蒸发源装置 技术领域
本发明涉及显示技术领域，特别是涉及一种蒸发源装置。
背景技术
OLED 显示技术较之当前主流的液晶显示技术，具有对比度高、色域广、柔性、轻薄以及节能等优点，逐渐在智能手机和平板电脑等移动设备、智能手表等柔性可穿戴设备、大尺寸曲面电视以及白光照明等领域普及。
OLED 技术主要包括以真空蒸镀技术为基础的小分子 OLED 技术和以溶液制程为基础的高分子 OLED 技术。蒸镀机是当前已量产的小分子 OLED 器件生产的主要设备，其设备核心部分为蒸发源装置，蒸发源装置分为点蒸发源、线蒸发源以及面蒸发源等。线蒸发源为当前重要的 OLED 量产技术，主要分为一体式线蒸发源和输送式线蒸发源。
如图 1 所示，现有点蒸发源广泛应用于研发及量产设备，在一个蒸镀腔体内，蒸发源 11-14 沿圆弧形分布于腔体底部，各蒸发源之间设置有限制板 16 ，以限定蒸发气流到达范围，基板 10 位于蒸发源 11-14 的上方，蒸镀时可沿腔体及基板 10 的中心位置旋转，从而提高膜厚均匀性。每个蒸发源通过独立的蒸发源遮挡板 15 控制蒸发源镀膜的开始或结束时间。蒸发源遮挡板 15 主要通过气缸控制其转动，使得现有的蒸发源只有开和关两种状态，因而难以在镀膜过程中控制镀膜速率及掺杂比例。
因此，有必要提供一种蒸发源装置，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种蒸发源装置，能够在镀膜过程中控制 蒸发源的镀膜速率。
技术解决方案
为解决上述技术问题，本发明提供一种蒸发源装置， 其中所述蒸发源装置用于对基板进行蒸镀操作，所述蒸发源装置包括：
蒸发源，设置在所述基板的下方；
蒸发源遮挡板，设置在所述蒸发源和所述基板之间；
驱动部件，与所述蒸发源遮挡板连接；所述驱动部件用于驱动所述蒸发源遮挡板相对于所述蒸发源旋转，并控制所述蒸发源遮挡板在镀膜过程中的旋转速率，以调整所述蒸发源的蒸镀速率；所述驱动部件还用于控制所述蒸发源遮挡板在镀膜过程中的旋转周期，所述蒸发源遮挡板在镀膜过程中的旋转周期根据所述基板的旋转周期设置；
其中所述蒸发源装置还包括蒸镀腔室，所述蒸发源、所述蒸发源遮挡板以及所述基板位于所述蒸镀腔室内。
在本发明的蒸发源装置中， 所述驱动部件用于通过控制所述蒸发源遮挡板在镀膜过程中的旋转速率，改变所述蒸发源遮挡板与所述蒸发源之间的遮挡面积，以调整所述蒸发源的蒸镀速率。
在本发明的蒸发源装置中， 所述蒸发源装置的工作状态包括完全关闭状态、部分开启状态以及完全开启状态。
在本发明的蒸发源装置中， 当所述蒸发源装置处于所述完全关闭状态时，所述蒸发源遮挡板完全遮挡所述蒸发源；
当所述蒸发源装置处于所述部分开启状态时，所述蒸发源遮挡板部分遮挡所述蒸发源；
当所述蒸发源装置处于所述完全开启状态时，所述蒸发源遮挡板未遮挡所述蒸发源。
在本发明的蒸发源装置中， 所述蒸发源装置还包括驱动轴，所述蒸发源遮挡板设置在所述驱动轴的顶端，所述驱动轴的底端与所述驱动部件连接。
在本发明的蒸发源装置中， 所述蒸发源遮挡板在镀膜过程中的旋转速率根据所述基板的旋转速率设置。
在本发明的蒸发源装置中， 所述蒸发源装置包括至少两个蒸发源和至少两个蒸发源遮挡板，每个蒸发源对应设置一蒸发源遮挡板，相邻两个所述蒸发源之间设置有限制板，所述限制板用于限制所述蒸发源的蒸镀区域。
在本发明的蒸发源装置中， 所述驱动部件还用于控制所述至少两个蒸发源中镀膜材料的掺杂比例。
本发明提供一种蒸发源装置， 所述蒸发源装置用于对基板进行蒸镀操作，所述蒸发源装置包括：
蒸发源，设置在所述基板的下方；
蒸发源遮挡板，设置在所述蒸发源和所述基板之间；
驱动部件，与所述蒸发源遮挡板连接；所述驱动部件用于驱动所述蒸发源遮挡板相对于所述蒸发源旋转，并控制所述蒸发源遮挡板在镀膜过程中的旋转速率，以调整所述蒸发源的蒸镀速率。
在本发明的蒸发源装置中， 所述驱动部件用于通过控制所述蒸发源遮挡板在镀膜过程中的旋转速率，改变所述蒸发源遮挡板与所述蒸发源之间的遮挡面积，以调整所述蒸发源的蒸镀速率。
在本发明的蒸发源装置中， 所述蒸发源装置的工作状态包括完全关闭状态、部分开启状态以及完全开启状态。
在本发明的蒸发源装置中， 当所述蒸发源装置处于所述完全关闭状态时，所述蒸发源遮挡板完全遮挡所述蒸发源；
当所述蒸发源装置处于所述部分开启状态时，所述蒸发源遮挡板部分遮挡所述蒸发源；
当所述蒸发源装置处于所述完全开启状态时，所述蒸发源遮挡板未遮挡所述蒸发源。
在本发明的蒸发源装置中， 所述蒸发源装置还包括驱动轴，所述蒸发源遮挡板设置在所述驱动轴的顶端，所述驱动轴的底端与所述驱动部件连接。
在本发明的蒸发源装置中， 所述蒸发源遮挡板在镀膜过程中的旋转速率根据所述基板的旋转速率设置。
在本发明的蒸发源装置中， 所述驱动部件还用于控制所述蒸发源遮挡板在镀膜过程中的旋转周期，所述蒸发源遮挡板在镀膜过程中的旋转周期根据所述基板的旋转周期设置。
在本发明的蒸发源装置中， 所述蒸发源装置包括至少两个蒸发源和至少两个蒸发源遮挡板，每个蒸发源对应设置一蒸发源遮挡板，相邻两个所述蒸发源之间设置有限制板，所述限制板用于限制所述蒸发源的蒸镀区域。
在本发明的蒸发源装置中， 所述驱动部件还用于控制所述至少两个蒸发源中镀膜材料的掺杂比例。
在本发明的蒸发源装置中， 所述蒸发源装置还包括蒸镀腔室，所述蒸发源、所述蒸发源遮挡板以及所述基板都位于所述蒸镀腔室内。
 有益效果
本发明的蒸发源装置，通过对现有的驱动部件进行改进，使得在镀膜过程中通过设定驱动部件的旋转速率，从而控制蒸发源遮挡板在镀膜过程中按设定速率旋转，进而控制相应蒸发源的蒸镀速率。此外，当两个或两个以上的蒸发源共同蒸镀时，还可以控制相应蒸发源的镀膜材料的掺杂比例。
附图说明
图 1 为现有蒸发源装置的俯视图；
图 2 为本发明蒸发源装置的结构示意图；
图 3 为本发明蒸发源装置中蒸发源遮挡板位置的第一种俯视图；
图 4 为本发明蒸发源装置中蒸发源遮挡板位置的第二种俯视图。
图 5 为本发明蒸发源装置中两种镀膜材料的厚度与掺杂比例之间的关系图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
本实施例的 蒸发源装置用于对基板进行蒸镀操作，如图 2 所示，所述蒸发源装置包括：设置在蒸镀腔室内的两个蒸发源 21 、 22 、两个蒸发源遮挡板 24 以及驱动部件 25 。
其中蒸发源 21 、 22 分别设置在所述基板 20 的下方。每个蒸发源设置一个蒸发源遮挡板 24 。左侧的蒸发源遮挡板 24 设置在蒸发源 21 和所述基板 20 之间；右侧的蒸发源遮挡板 24 设置在蒸发源 22 和所述基板 20 之间。两个蒸发源 21 、 22 之间设置有限制板 23 ，所述限制板 23 沿竖直方向设置。
所述限制板 23 用于限制所述蒸发源 21 、 22 的蒸镀区域。蒸发气流的蒸发范围为图中虚线所示。
驱动部件 25 与蒸发源遮挡板 24 电性连接；所述驱动部件 24 用于驱动所述蒸发源遮挡板 24 相对于对应的蒸发源旋转，并控制所述蒸发源遮挡板 24 在镀膜过程中的旋转速率，以调整所述蒸发源的蒸镀速率。在一实施方式中，该驱动部件 25 为电机。
其中蒸发源装置还可包括驱动轴 26 ，所述蒸发源遮挡板 24 设置在所述驱动轴 26 的顶端，所述驱动轴 26 的底端与所述驱动部件 25 连接。其中所述蒸发源遮挡板 24 的一端设置在所述驱动轴 26 的顶端。具体地，所述驱动部件 25 可以驱动蒸发源遮挡板 24 以驱动轴 26 为轴进行旋转。
以左侧的蒸发源遮挡板为例，如图 3 所示，蒸发源遮挡板 24 可以一定速率（如均速旋转）从完全关闭状态 S1 过渡到完全打开状态 S3 ，中间经历部分打开状态 S2 ；再以一定速率（如均速旋转）从完全打开状态 S4 过渡到完全关闭状态 S1 ，中间经历部分打开状态 S5 ，从而完成一个动作周期。可以理解的，右侧的蒸发源遮挡板与左侧的蒸发源遮挡板类似。
也即所述蒸发源装置的工作状态包括完全关闭状态、部分开启状态以及完全开启状态。
当所述蒸发源装置处于完全关闭状态时，所述蒸发源遮挡板 24 完全遮挡所述蒸发源 21 ；当所述蒸发源装置处于部分开启状态时，所述蒸发源遮挡板 24 部分遮挡所述蒸发源 21 ；当所述蒸发源装置处于完全开启状态时，所述蒸发源遮挡板 24 未遮挡所述蒸发源 21 。
所述驱动部件 25 具体用于通过控制所述蒸发源遮挡板 24 在镀膜过程中的旋转速率以改变所述蒸发源遮挡板 24 与所述蒸发源 21 之间的遮挡面积，从而调整所述蒸发源的蒸镀速率。当所述蒸发源装置处于完全关闭状态，所述蒸发源遮挡板 24 与蒸发源 21 之间的遮挡面积最大，此时蒸镀速率最低；当所述蒸发源装置处于部分开启状态，所述蒸发源遮挡板 24 与蒸发源 21 之间的遮挡面积位于最大值和最小值之间，此时蒸镀速率处于中间值（也即最高速率和最低速率之间）；当所述蒸发源装置处于完全开启状态，所述蒸发源遮挡板 24 与蒸发源 21 之间的遮挡面积最小，此时蒸镀速率最高。
所述蒸发源遮挡板 24 在镀膜过程中的旋转速率根据所述基板 20 的旋转速率设置。
所述驱动部件 25 还用于控制所述蒸发源遮挡板 24 在镀膜过程中的旋转周期，所述蒸发源遮挡板 24 在镀膜过程中的旋转周期根据所述基板 20 的旋转周期设置。
比如基板的旋转速率为 6~10RPM （转 / 分钟），蒸发源遮挡板 24 的旋转速率和周期可根据基板 20 蒸镀过程中的旋转速率和周期进行设置，从而对掺杂比例和镀膜均匀性进行优化。所述驱动部件 25 还用于控制所述两个蒸发源中镀膜材料的掺杂比例。
在一实施方式中，在镀膜过程中，蒸发源遮挡板 24 按照设定速度（如匀速旋转）持续旋转动作周期 (1cycle) 。基板 20 旋转 360 º为一转，配合基板 20 旋转速度（如 10 RPM ），基板的转速为 60 º /sec 。
可根据此速度，设定蒸发源遮挡板 24 的速度， 360 º /8=45 º /cycle ，即蒸发源遮挡板 24 的转速为 45/60 sec/cycle 。进一步地，根据模拟结果，优化蒸发源遮挡板 24 的旋转速率和周期，从而对掺杂比例和镀膜均匀性进行优化。
当基板 20 旋转到 0~45 º（也即旋转角度为 0~45 º），蒸发源遮挡板 24 的开启和关闭状态如 S1-S2-S3-S2-S1 。
当基板 20 旋转到 45~90 º，蒸发源遮挡板 24 的开启和关闭状态如 S1-S5-S4-S5-S1 。
以上为一个周期（基板旋转的 0~90 º），重复 4 个周期，完成基板 20 旋转一圈的动作。
在另一实施方式中，在镀膜过程中，蒸发源遮挡板 24 按照设定速度（如匀速旋转）持续旋转动作周期 (1cycle) ，如图 4 所示。基板 20 旋转 360 º为一转，配合基板 20 的旋转速度（如 10 RPM ），基板 20 的转速为 60 º /sec 。
在基板 20 旋转到 0~30 º期间，可根据此速度设定蒸发源遮挡板 24 的速度，比如为 30 º /cycle ，即蒸发源遮挡板 24 的转速为 30/60 sec/cycle 。蒸发源遮挡板 24 的开启和关闭状态如 S8-S7-S6-S7-S8 。
之后在基板 20 旋转至 60 º期间，蒸发源遮挡板 24 持续保持打开状态。
以上为一个周期，重复 4 个周期，完成基板 20 旋转一圈的动作。
可以理解的，本发明的蒸发源装置也可以包括一个蒸发源和一个蒸发源遮挡板，或者包括两个以上的蒸发源和蒸发源遮挡板。
当蒸发源装置包括两个以上的蒸发源和蒸发源遮挡板时， 所述驱动部件还用于控制至少两个蒸发源中镀膜材料的掺杂比例。
以两种镀膜材料为例，如图 5 所示， A 、 B 表示两种镀膜材料，横坐标表示厚度，纵坐标表示掺杂比例， A 、 B 两种镀膜材料分别位于两个蒸发源中，可见本发明的蒸发源装置可以沿厚度方向灵活地设置两种材料的掺杂比例（ Ratio ）。而现有技术在掺杂过程中，只能进行等比例掺杂，也即两种镀膜材料的比例近似相等。
本发明的蒸发源装置，通过对现有的驱动部件进行改进，使得在镀膜过程中通过设定驱动部件的旋转速率，从而控制蒸发源遮挡板在镀膜过程中按设定速率旋转，进而控制相应蒸发源的蒸镀速率。此外，当两个或两个以上的蒸发源共同蒸镀时，还可以控制相应蒸发源的镀膜材料的掺杂比例。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种蒸发源装置，其中所述蒸发源装置用于对基板进行蒸镀操作，所述蒸发源装置包括：
    蒸发源，设置在所述基板的下方；
    蒸发源遮挡板，设置在所述蒸发源和所述基板之间；
    驱动部件，与所述蒸发源遮挡板连接；所述驱动部件用于驱动所述蒸发源遮挡板相对于所述蒸发源旋转，并控制所述蒸发源遮挡板在镀膜过程中的旋转速率，以调整所述蒸发源的蒸镀速率；所述驱动部件还用于控制所述蒸发源遮挡板在镀膜过程中的旋转周期，所述蒸发源遮挡板在镀膜过程中的旋转周期根据所述基板的旋转周期设置；
    其中所述蒸发源装置还包括蒸镀腔室，所述蒸发源、所述蒸发源遮挡板以及所述基板都位于所述蒸镀腔室内。
  2. 如权利要求 1 所述的蒸发源装置，其中
    所述驱动部件用于通过控制所述蒸发源遮挡板在镀膜过程中的旋转速率，改变所述蒸发源遮挡板与所述蒸发源之间的遮挡面积，以调整所述蒸发源的蒸镀速率。
  3. 如权利要求 2 所述的蒸发源装置，其中
    所述蒸发源装置的工作状态包括完全关闭状态、部分开启状态以及完全开启状态。
  4. 如权利要求 3 所述的蒸发源装置，其中
    当所述蒸发源装置处于所述完全关闭状态时，所述蒸发源遮挡板完全遮挡所述蒸发源；
    当所述蒸发源装置处于所述部分开启状态时，所述蒸发源遮挡板部分遮挡所述蒸发源；
    当所述蒸发源装置处于所述完全开启状态时，所述蒸发源遮挡板未遮挡所述蒸发源。
  5. 如权利要求 1 所述的蒸发源装置，其中所述蒸发源装置还包括驱动轴，所述蒸发源遮挡板设置在所述驱动轴的顶端，所述驱动轴的底端与所述驱动部件连接。
  6. 如权利要求 1 所述的蒸发源装置，其中
    所述蒸发源遮挡板在镀膜过程中的旋转速率根据所述基板的旋转速率设置。
  7. 如权利要求 1 所述的蒸发源装置，其中
    所述蒸发源装置包括至少两个蒸发源和至少两个蒸发源遮挡板，每个蒸发源对应设置一蒸发源遮挡板，相邻两个所述蒸发源之间设置有限制板，所述限制板用于限制所述蒸发源的蒸镀区域。
  8. 如权利要求 7 所述的蒸发源装置，其中
    所述驱动部件还用于控制所述至少两个蒸发源中镀膜材料的掺杂比例。
  9. 一种蒸发源装置，其中所述蒸发源装置用于对基板进行蒸镀操作，所述蒸发源装置包括：
    蒸发源，设置在所述基板的下方；
    蒸发源遮挡板，设置在所述蒸发源和所述基板之间；
    驱动部件，与所述蒸发源遮挡板连接；所述驱动部件用于驱动所述蒸发源遮挡板相对于所述蒸发源旋转，并控制所述蒸发源遮挡板在镀膜过程中的旋转速率，以调整所述蒸发源的蒸镀速率。
  10. 如权利要求 9 所述的蒸发源装置，其中所述驱动部件用于通过控制所述蒸发源遮挡板在镀膜过程中的旋转速率，改变所述蒸发源遮挡板与所述蒸发源之间的遮挡面积，以调整所述蒸发源的蒸镀速率。
  11. 如权利要求 10 所述的蒸发源装置，其中所述蒸发源装置的工作状态包括完全关闭状态、部分开启状态以及完全开启状态。
  12. 如权利要求 11 所述的蒸发源装置，其中当所述蒸发源装置处于所述完全关闭状态时，所述蒸发源遮挡板完全遮挡所述蒸发源；
    当所述蒸发源装置处于所述部分开启状态时，所述蒸发源遮挡板部分遮挡所述蒸发源；
    当所述蒸发源装置处于所述完全开启状态时，所述蒸发源遮挡板未遮挡所述蒸发源。
  13. 如权利要求 9 所述的蒸发源装置，其中所述蒸发源装置还包括驱动轴，所述蒸发源遮挡板设置在所述驱动轴的顶端，所述驱动轴的底端与所述驱动部件连接。
  14. 如权利要求 9 所述的蒸发源装置，其中
    所述蒸发源遮挡板在镀膜过程中的旋转速率根据所述基板的旋转速率设置。
  15. 如权利要求 9 所述的蒸发源装置，其中
    所述驱动部件还用于控制所述蒸发源遮挡板在镀膜过程中的旋转周期，所述蒸发源遮挡板在镀膜过程中的旋转周期根据所述基板的旋转周期设置。
  16. 如权利要求 9 所述的蒸发源装置，其中
    所述蒸发源装置包括至少两个蒸发源和至少两个蒸发源遮挡板，每个蒸发源对应设置一蒸发源遮挡板，相邻两个所述蒸发源之间设置有限制板，所述限制板用于限制所述蒸发源的蒸镀区域。
  17. 如权利要求 16 所述的蒸发源装置，其中
    所述驱动部件还用于控制所述至少两个蒸发源中镀膜材料的掺杂比例。
  18. 如权利要求 9 所述的蒸发源装置，其中所述蒸发源装置还包括蒸镀腔室，所述蒸发源、所述蒸发源遮挡板以及所述基板都位于所述蒸镀腔室内。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1459517A (zh) * 2002-05-17 2003-12-03 精碟科技股份有限公司 镀膜装置及镀膜方法
JP2008056952A (ja) * 2006-08-29 2008-03-13 Canon Inc 斜方蒸着装置、斜方蒸着方法及び液晶装置の製造方法
WO2011102405A1 (ja) * 2010-02-18 2011-08-25 株式会社アルバック 縦型真空装置及び処理方法
CN103993266A (zh) * 2014-04-17 2014-08-20 京东方科技集团股份有限公司 真空蒸镀设备
CN205329148U (zh) * 2016-02-18 2016-06-22 合肥鑫晟光电科技有限公司 一种真空蒸发源装置及真空蒸镀设备
CN107012431A (zh) * 2017-05-04 2017-08-04 京东方科技集团股份有限公司 一种蒸镀源、蒸镀装置及蒸镀方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115964A (ja) * 1984-06-29 1986-01-24 Fujitsu Ltd 真空蒸着装置
US5906857A (en) * 1997-05-13 1999-05-25 Ultratherm, Inc. Apparatus, system and method for controlling emission parameters attending vaporized in a HV environment
KR100908205B1 (ko) * 2007-08-30 2009-07-20 주식회사 야스 초퍼를 이용한 대면적 박막 제작용 증착 장치
CN101445910A (zh) * 2008-12-17 2009-06-03 中国科学院上海光学精密机械研究所 可调沉积速率的真空镀膜机挡板
US8673082B2 (en) * 2011-01-20 2014-03-18 Sharp Kabushiki Kaisha Crucible and deposition apparatus
US9365923B2 (en) * 2013-02-04 2016-06-14 Sharp Kabushiki Kaisha Vapor deposition device and vapor deposition method
JP5856584B2 (ja) * 2013-06-11 2016-02-10 シャープ株式会社 制限板ユニットおよび蒸着ユニット並びに蒸着装置
CN103540898B (zh) * 2013-10-30 2015-07-01 京东方科技集团股份有限公司 一种真空蒸镀装置
CN205662590U (zh) * 2016-06-14 2016-10-26 合肥鑫晟光电科技有限公司 一种蒸镀装置
CN106835020B (zh) * 2017-01-03 2019-05-17 中国科学院上海光学精密机械研究所 降低氧化铪-氧化硅多层膜表面粗糙度的方法
CN106978588B (zh) * 2017-03-31 2019-09-20 京东方科技集团股份有限公司 一种蒸镀罩、蒸镀源、蒸镀装置及蒸镀方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1459517A (zh) * 2002-05-17 2003-12-03 精碟科技股份有限公司 镀膜装置及镀膜方法
JP2008056952A (ja) * 2006-08-29 2008-03-13 Canon Inc 斜方蒸着装置、斜方蒸着方法及び液晶装置の製造方法
WO2011102405A1 (ja) * 2010-02-18 2011-08-25 株式会社アルバック 縦型真空装置及び処理方法
CN103993266A (zh) * 2014-04-17 2014-08-20 京东方科技集团股份有限公司 真空蒸镀设备
CN205329148U (zh) * 2016-02-18 2016-06-22 合肥鑫晟光电科技有限公司 一种真空蒸发源装置及真空蒸镀设备
CN107012431A (zh) * 2017-05-04 2017-08-04 京东方科技集团股份有限公司 一种蒸镀源、蒸镀装置及蒸镀方法

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