WO2020077719A1 - 蒸镀装置 - Google Patents

蒸镀装置 Download PDF

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Publication number
WO2020077719A1
WO2020077719A1 PCT/CN2018/115838 CN2018115838W WO2020077719A1 WO 2020077719 A1 WO2020077719 A1 WO 2020077719A1 CN 2018115838 W CN2018115838 W CN 2018115838W WO 2020077719 A1 WO2020077719 A1 WO 2020077719A1
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WO
WIPO (PCT)
Prior art keywords
vapor deposition
cavity
sub
evaporation
deposition apparatus
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Application number
PCT/CN2018/115838
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English (en)
French (fr)
Inventor
徐超
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/469,156 priority Critical patent/US20210332471A1/en
Publication of WO2020077719A1 publication Critical patent/WO2020077719A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Definitions

  • the present application relates to the field of panel manufacturing, in particular to a vapor deposition device.
  • OLED Organic Light-Emitting Diode
  • the evaporation device belongs to high vacuum coating equipment, and the working pressure needs to be lower than 5 * 10 -5 Pa. It takes 1 to 2 days to reduce the pressure in the cavity of the evaporation source to work, and each feeding requires a long time, which limits the production capacity of the evaporation device.
  • the present application provides a vapor deposition device to solve the technical problem of reducing the production capacity of the existing vapor deposition device due to feeding.
  • This application provides a vapor deposition device, which includes:
  • the main cavity includes a first shell, a carrier located in the first shell, and a line source crucible opposite to the carrier;
  • At least two sub-cavities including evaporation sources
  • the first channel includes a first part and a second part, the first part is located in the main cavity, the second part is located in the sub-cavity, the line source crucible passes through The first channel is connected to the evaporation source.
  • At least a first switch and a second switch are provided on each of the first channels;
  • the first switch is located on the first part, and the second switch is located on the second part.
  • the line source crucible includes a second shell and a first through hole provided on the second shell.
  • the line source crucible further includes at least one air flow dispersing plate provided in the second housing, and a second through hole provided in the air flow dispersing plate.
  • the diameter of the first through hole is not smaller than the diameter of the second through hole.
  • the vapor deposition device includes at least a first sub-cavity and a second sub-cavity;
  • the evaporation source in the first sub-cavity and the second sub-cavity is connected to at least one of the first channels.
  • a heating device is provided on the surface of at least one of the line source crucible, the vapor deposition source, or the first channel.
  • the heating device is a heating wire.
  • the stage includes a first opening
  • the pitch of the first opening in the first direction is smaller than the length of the target substrate in the first direction.
  • This application also proposes a vapor deposition device, which includes:
  • the main cavity includes a first shell, a carrier located in the first shell, and a line source crucible opposite to the carrier;
  • At least two sub-cavities including evaporation sources
  • the first channel includes a first part and a second part, the first part is located in the main cavity, the second part is located in the sub-cavity, the line source crucible passes through The first channel is connected to the evaporation source;
  • At least one first monitoring device located in the sub-cavity the first monitoring device is used to monitor the remaining amount of the evaporation material in the evaporation source;
  • At least one second monitoring device located in the main cavity the second monitoring device is used to monitor the rate of the evaporation material.
  • At least a first switch and a second switch are provided on each of the first channels;
  • the first switch is located on the first part, and the second switch is located on the second part.
  • the line source crucible includes a second shell and a first through hole provided on the second shell.
  • the line source crucible further includes at least one air flow dispersing plate provided in the second housing, and a second through hole provided in the air flow dispersing plate.
  • the diameter of the first through hole is not smaller than the diameter of the second through hole.
  • the vapor deposition device includes at least a first sub-cavity and a second sub-cavity;
  • the evaporation source in the first sub-cavity and the second sub-cavity is connected to at least one of the first channels.
  • a heating device is provided on the surface of at least one of the line source crucible, the vapor deposition source, or the first channel.
  • the heating device is a heating wire.
  • the stage includes a first opening
  • the pitch of the first opening in the first direction is smaller than the length of the target substrate in the first direction.
  • the present application proposes a vapor deposition device.
  • the vapor deposition device includes a main cavity and at least two sub-cavities on both sides of the main cavity.
  • the sub-cavity is used to provide the evaporation material in the evaporation process.
  • at least one of the sub-cavities is used as a backup evaporation source.
  • the standby evaporation source in the other sub-cavity starts to work, enabling the evaporation device to continuously coat the film, and adding an evaporation device Capacity.
  • the maintenance time of the vapor deposition device is reduced.
  • FIG. 1 is a structural diagram of an evaporation apparatus of the present application.
  • FIG. 1 is a structural diagram of an evaporation apparatus of the present application.
  • the vapor deposition apparatus 100 includes a main cavity 10 and at least two sub-cavities located around the main cavity 10.
  • the main cavity 10 includes a first casing 101, a stage 102 located in the first casing 101, and a line source crucible 103 opposite to the stage 102.
  • the stage 102 is used to load the target substrate 20. Before the target substrate 20 is vapor-deposited, mark alignment is required to reduce the vapor deposition error.
  • the stage 102 includes a first opening 104.
  • the pitch of the first opening is smaller than the length of the substrate, so that the substrate overlaps the stage 102.
  • the area of the first opening is an area where the target substrate 20 is vapor-deposited.
  • the carrier may further include an adsorption device.
  • the suction device fixes the target substrate 20 by suction. Compared with the embodiment in which the first opening is formed, this embodiment increases the area of the target substrate 20 to be vapor-deposited, and reduces the waste of materials.
  • the line source crucible 103 includes a second housing 104 and a first through hole 105 located on the second housing 104.
  • the line source crucible 103 may include a plurality of the first through holes. There are no specific restrictions on the arrangement manner, number, shape and size of the first through holes, which can be set according to actual needs.
  • the first through holes are distributed in an array on the first housing 101, and each of the first through holes is equal in size and shape.
  • the shape of the first through hole may be cylindrical.
  • the line source crucible 103 further includes a main switch (not shown) located on the second housing 104.
  • the main switch is used to control the opening or closing of the line source crucible 103. It can also be understood that the main switch is used to control the stop and operation of the evaporation process.
  • the main switch may be arranged parallel to the first opening.
  • the line source crucible 103 further includes at least one air flow dispersing plate 107 disposed in the second housing 104 and a second through hole 106 provided on the air flow dispersing plate 107.
  • the air flow dispersing plate 107 is used to uniformly release the vapor deposition material generated by the vapor deposition source 50 to ensure the uniformity of the target substrate 20 for the vapor plating film.
  • the density of the second through holes 106 on the air flow dispersing plate 107 close to the stage 102 is not less than that on the air flow dispersing plate 107 far from the stage 102 State the density of the through holes.
  • the diameter of the second through hole 106 on the air flow dispersing plate 107 close to the stage 102 is not smaller than that on the air flow dispersing plate 107 far from the stage 102
  • the diameter of the second through hole 106 is described.
  • an air flow dispersing plate 107 is provided in the line source crucible 103.
  • the diameter of the second through hole 106 on the air flow dispersing plate 107 is smaller than the diameter of the first through hole on the second housing 104.
  • the vapor deposition apparatus 100 includes at least a first sub-cavity 30 and a second sub-cavity 40.
  • An evaporation source 50 is provided in the first sub-cavity 30 and the second sub-cavity 40.
  • the evaporation source 50 is used to generate the evaporation material required in the evaporation process.
  • the evaporation material may be an organic material, such as a light-emitting material in an OLED device.
  • the vapor deposition apparatus 100 further includes at least two first channels 60, and the line source crucible 103 is connected to the vapor deposition source 50 through the first channels 60.
  • the first channel 60 includes a first part 601 and a second part 602.
  • the first part 601 is located in the main cavity 10 and is connected to the line source crucible 103
  • the second part 602 is located in the sub-cavity and is connected to the evaporation source 50 in the sub-cavity.
  • the vapor deposition apparatus 100 further includes several switches provided on the first channel 60 for controlling the opening or closing of the sub-cavity or the vapor deposition source 50.
  • each of the first channels 60 is provided with at least a first switch 603 and a second switch 604.
  • the first switch 603 is located on the first part 601
  • the second switch 604 is located on the second part 602.
  • the first switch 603 is used to control the opening or closing of the line source crucible 103.
  • the second switch 604 is used to control the opening or closing of the evaporation source 50.
  • the first switch 603 and the second switch 604 may be solenoid valves.
  • the evaporation source 50 in the first sub-cavity 30 and the second sub-cavity 40 is connected to at least one first channel 60.
  • the specific quantity can be limited according to actual needs.
  • the vapor deposition source 50 further includes a heating device (not shown) provided on the surface of at least one of the line source crucible 103, the vapor deposition source 50, or the first channel 60.
  • the heating device is used to increase the energy of the evaporation material and increase the evaporation rate of the evaporation process.
  • the heating device can also make the vapor deposition material in the second housing 104 evenly distributed.
  • the heating device is a heating wire.
  • the heating wires are evenly distributed on the surface of the evaporation source 50.
  • At least one first monitoring device 70 is further provided in the sub-cavity, and the first monitoring device 70 is used to monitor the remaining amount of the vapor deposition material in the vapor deposition source 50.
  • the first monitoring device 70 is a rate monitoring device, which is used to monitor the rate of the vapor deposition material in the sub-cavity to determine the remaining amount of the vapor deposition material in the vapor deposition source 50.
  • the first monitoring device 70 is a weight measuring device, which is disposed at the bottom of the discharge area of the evaporation source 50.
  • the first monitoring device 70 measures the weight of the evaporation material to determine the remaining amount of the evaporation material in the evaporation source 50.
  • At least one second monitoring device 80 is further provided in the main cavity 10, and the second monitoring device 80 is used to monitor the rate of the vapor deposition material.
  • the main cavity 10 is provided with two second monitoring devices under the target substrate.
  • the second monitoring device is a rate monitoring device for monitoring the rate of the vapor deposition material located in the main cavity 10 in real time, and assisting in monitoring the remaining amount of the vapor deposition material in the vapor deposition source 50.
  • the second monitoring device is also used to monitor the uniformity of the distribution of the evaporation material in the main cavity 10 to adjust the uniformity of the film formation of the target substrate and improve the quality of the product.
  • At least one of the sub-cavities is used as a backup evaporation source, and the other sub-cavity is used as a working evaporation source to ensure that the evaporation device can continuously coat the film.
  • the following uses the first sub-cavity as a working evaporation source and the second sub-cavity as a backup evaporation source as an example for description.
  • the first switch and the second switch on the first channel connected to the first sub-cavity are in an open state, and the first The first switch and the second switch on the two sub-chambers are in a closed state.
  • the first monitoring device located in the first sub-cavity monitors that the evaporation material in the first sub-cavity is about to be exhausted
  • the second sub-cavity is put into a working state and the The first sub-cavity, and filling is carried out in the first sub-cavity, and the circulation operation is performed.
  • the present application proposes a vapor deposition device.
  • the vapor deposition device includes a main cavity and at least two sub-cavities on both sides of the main cavity.
  • the sub-cavity is used to provide the evaporation material in the evaporation process.
  • at least one of the sub-cavities is used as a backup evaporation source.
  • the standby evaporation source in the other sub-cavity starts to work, enabling the evaporation device to continuously coat the film, and adding an evaporation device Capacity.
  • the maintenance time of the vapor deposition device is reduced.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种蒸镀装置(100)，包括：主腔体(10)，主腔体(10)包括第一壳体(101)、位于第一壳体(101)内的载台(102)及与载台(102)相对设置的线源坩埚(103)；至少两个子腔体(30,40)，包括蒸镀源(50)；开关(603,604)，用于控制子腔体(30,40)或蒸镀源(50)的打开或关闭；至少两个第一通道(60)，第一通道(60)包括第一部分(601)和第二部分(602)，第一部分(601)位于主腔体内(10)，第二部分(602)位于子腔体内(30,40)，线源坩埚(103)通过第一通道(601)与蒸镀源(50)连接。还公开了另一种蒸镀装置(100)。

Description

蒸镀装置 技术领域
本申请涉及面板制造领域，特别涉及一种蒸镀装置。
 背景技术
目前，有机发光二极管（Organic Light-Emitting Diode，OLED）器件制作的主要方式是加热蒸发镀膜。
在工艺上，当蒸镀装置中的蒸镀材料消耗完时，需要开腔进行加料。而蒸发装置属于高真空镀膜设备，工作压力需要低于5*10 -5Pa。将蒸镀源内腔压力降低至工作需要花费1~2天时间，每次加料需要耗费较长的时间，限制了蒸镀装置的产能。
因此，目前亟需一种新型的蒸镀装置解决上述问题。
 技术问题
本申请提供一种蒸镀装置，以解决现有蒸镀装置因加料而造成产能降低的技术问题。
 技术解决方案
本申请提供了一种蒸镀装置，其包括：
主腔体，包括第一壳体、位于所述第一壳体内的载台及与所述载台相对设置的线源坩埚；
至少两个子腔体，包括蒸镀源；
开关，用于控制所述子腔体或所述蒸镀源的打开或关闭；
至少两个第一通道，所述第一通道包括第一部分和第二部分，所述第一部分位于所述主腔体内，所述第二部分位于所述子腔体内，所述线源坩埚通过所述第一通道与所述蒸镀源连接。
在本申请的蒸镀装置中，每一所述第一通道上至少设置有第一开关和第二开关；
所述第一开关位于所述第一部分上，所述第二开关位于所述第二部分上。
在本申请的蒸镀装置中，所述线源坩埚包括第二壳体、及设置于所述第二壳体上的第一通孔。
在本申请的蒸镀装置中，所述线源坩埚还包括设置于所述第二壳体内的至少一气流分散板、及设置于所述气流分散板上的第二通孔。
在本申请的蒸镀装置中，所述第一通孔的孔径不小于所述第二通孔的孔径。
在本申请的蒸镀装置中，所述蒸镀装置至少包括第一子腔体和第二子腔体；
所述第一子腔体及所述第二子腔体中的所述蒸镀源与至少一所述第一通道连接。
在本申请的蒸镀装置中，所述线源坩埚、所述蒸镀源或所述第一通道中至少一者的表面设置有加热装置。
在本申请的蒸镀装置中，所述加热装置为加热丝。
在本申请的蒸镀装置中，所述载台包括第一开口；
所述第一开口在第一方向上的间距小于目标基板在第一方向上的长度。
本申请还提出了一种蒸镀装置，其包括：
主腔体，包括第一壳体、位于所述第一壳体内的载台及与所述载台相对设置的线源坩埚；
至少两个子腔体，包括蒸镀源；
开关，用于控制所述子腔体或所述蒸镀源的打开或关闭；
至少两个第一通道，所述第一通道包括第一部分和第二部分，所述第一部分位于所述主腔体内，所述第二部分位于所述子腔体内，所述线源坩埚通过所述第一通道与所述蒸镀源连接;
位于所述子腔体内的至少一第一监控装置，所述第一监控装置用于监控所述蒸镀源内蒸镀材料的剩余量；
位于所述主腔体内的至少一第二监控装置，所述第二监控装置用于监控蒸镀材料的速率。
在本申请的蒸镀装置中，每一所述第一通道上至少设置有第一开关和第二开关；
所述第一开关位于所述第一部分上，所述第二开关位于所述第二部分上。
在本申请的蒸镀装置中，所述线源坩埚包括第二壳体、及设置于所述第二壳体上的第一通孔。
在本申请的蒸镀装置中，所述线源坩埚还包括设置于所述第二壳体内的至少一气流分散板、及设置于所述气流分散板上的第二通孔。
在本申请的蒸镀装置中，所述第一通孔的孔径不小于所述第二通孔的孔径。
在本申请的蒸镀装置中，所述蒸镀装置至少包括第一子腔体和第二子腔体；
所述第一子腔体及所述第二子腔体中的所述蒸镀源与至少一所述第一通道连接。
在本申请的蒸镀装置中，所述线源坩埚、所述蒸镀源或所述第一通道中至少一者的表面设置有加热装置。
在本申请的蒸镀装置中，所述加热装置为加热丝。
在本申请的蒸镀装置中，所述载台包括第一开口；
所述第一开口在第一方向上的间距小于目标基板在第一方向上的长度。
 有益效果
本申请提出了一种蒸镀装置，所述蒸镀装置包括主腔体及位于所述主腔体两侧的至少两个子腔体。所述子腔体用于提供蒸镀工艺中的蒸镀材料。本申请通过将至少一所述子腔体作为备用蒸镀源。当其中一个或一个以上的所述子腔体中的蒸镀材料耗尽时，另一所述子腔体中的备用蒸镀源开始工作，使蒸镀装置能连续镀膜，增加了蒸镀装置的产能。并且，减少了蒸镀装置的维修保养时间。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一种蒸镀装置的结构图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
请参阅图1，图1为本申请一种蒸镀装置的结构图。
所述蒸镀装置100包括主腔体10及位于所述主腔体10周围的至少两个子腔体。
所述主腔体10包括第一壳体101、位于所述第一壳体101内的载台102及与所述载台102相对设置的线源坩埚103。
所述载台102用于装载目标基板20，每一所述目标基板20在进行蒸镀之前，需要进行标记对位，减少蒸镀误差。
在一种实施例中，请参照图1，所述载台102包括第一开口104。在水平方向上，所述第一开口的间距小于所述基板的长度，使的所述基板搭接在所述载台102上。所述第一开口的面积为所述目标基板20进行蒸镀的区域。
在一种实施例中，所述载台还可以包括吸附装置。所述吸附装置通过吸附作用固定所述目标基板20。与形成有第一开口的实施例相比，本实施例增加了所述目标基板20进行蒸镀的面积，减少了材料的浪费。
请参阅图1，所述线源坩埚103包括第二壳体104及位于所述第二壳体104上的第一通孔105。
在一种实施例中，所述线源坩埚103可以包括多个所述第一通孔。所述第一通孔的排布方式、数量、形状及大小没有具体的限制，可以根据实际需求进行设定。
在一种实施例中，所述第一通孔在所述第一壳体101上呈阵列分布，每一所述第一通孔的大小及形状相等。
在一种实施例中，所述第一通孔的形状可以为圆柱形。
所述线源坩埚103还包括位于所述第二壳体104上的主开关（未画出）。所述主开关用于控制所述线源坩埚103的打开或闭合。也可以理解为，所述主开关用于控制蒸镀工艺的停止和运行。
在一种实施例中，所述主开关可以与所述第一开口平行设置。
所述线源坩埚103还包括设置于所述第二壳体104内的至少一气流分散板107、及设置所述气流分散板107上的第二通孔106。所述气流分散板107用于将所述蒸镀源50产生的蒸镀材料均匀的释放，保证所述目标基板20进行蒸发镀膜的均匀性。
在一种实施例中，靠近所述载台102的所述气流分散板107上的所述第二通孔106的密度，不小于远离所述载台102的所述气流分散板107上的所述通孔的密度。
在一种实施例中，靠近所述载台102的所述气流分散板107上所述第二通孔106的孔径大小，不小于远离所述载台102的所述气流分散板107上的所述第二通孔106的孔径大小。
请参阅图1，所述线源坩埚103内设置有一个所述气流分散板107。所述气流分散板107上的所述第二通孔106的孔径小于位于所述第二壳体104上的所述第一通孔的孔径。
所述蒸镀装置100至少包括第一子腔体30和第二子腔体40。所述第一子腔体30和所述第二子腔体40内设置有蒸镀源50。所述蒸镀源50用于产生蒸镀工艺中的需要的蒸镀材料。
在一种实施例中，所述蒸镀材料可以为有机材料，例如OLED器件中的发光材料。
所述蒸镀装置100还包括至少两个第一通道60，所述线源坩埚103通过所述第一通道60与所述蒸镀源50连接。所述第一通道60包括第一部分601和第二部分602。所述第一部分601位于所述主腔体10内，与所述线源坩埚103连接，所述第二部分602位于所述子腔体内，与所述子腔体内的蒸镀源50连接。
所述蒸镀装置100还包括设置于所述第一通道60上若干个开关，用于控制所述子腔体或所述蒸镀源50的打开或关闭。
在一种实施例中，每一所述第一通道60上至少设置有第一开关603和第二开关604。所述第一开关603位于所述第一部分601上，所述第二开关604位于所述第二部分602上。所述第一开关603用于控制所述线源坩埚103的打开或闭合。所述第二开关604用于控制所述蒸镀源50的打开或闭合。
在一种实施例中，所述第一开关603及所述第二开关604可以为电磁阀。
在一种实施例中，所述第一子腔体30及所述第二子腔体40中的所述蒸镀源50与至少一所述第一通道60连接。具体数量可以根据实际需求进行限定。
所述蒸镀源50还包括设置于所述线源坩埚103、所述蒸镀源50或所述第一通道60中至少一者的表面的加热装置（未画出）。
所述加热装置用于增加所述蒸镀材料的能量，增加蒸镀工艺的蒸镀速率。所述加热装置还可以使得所述第二壳体104内的蒸镀材料均匀分布。
在一种实施例中，所述加热装置为加热丝。所述加热丝均匀的分布于所述蒸镀源50的表面。
所述子腔体内还设置有至少一第一监控装置70，所述第一监控装置70用于监控所述蒸镀源50内蒸镀材料的剩余量。
在一种实施例中，所述第一监控装置70为监控速率装置，用于监控所述子腔体内蒸镀材料的速率，以判断所述蒸镀源50内蒸镀材料的剩余量。
在一种实施例中，所述第一监控装置70为测量重量装置，设置于所述蒸镀源50放料区的底端。所述第一监控装置70通过测量所述蒸镀材料的重量，以判断所述蒸镀源50内蒸镀材料的剩余量。
所述主腔体10内还设置有至少一第二监控装置80，所述第二监控装置80用于监控蒸镀材料的速率。
在一种实施例中，请参阅图1，所述主腔体10内设置有位于所述目标基板下方的两个所述第二监控装置。所述第二监控装置为监控速率装置，用于实时监控位于所述主腔体10内的所述蒸镀材料的速率，辅助监控所述蒸镀源50内蒸镀材料的剩余量。所述第二监控装置还用于监控主腔体10内蒸镀材料分布的均匀性，以调节目标基板的成膜均匀性，提高产品的品质。
本申请通过将至少一所述子腔体作为备用蒸镀源，另一所述子腔体作为工作蒸镀源，以保证蒸镀装置能连续镀膜。下面以所述第一子腔体作为工作蒸镀源，所述第二子腔体作为备用蒸镀源为例进行说明。
当所述第一子腔体作为工作蒸镀源时，与所述第一子腔体连接的所述第一通道上的所述第一开关及所述第二开关处于打开状态，所述第二子腔体上的第一开关及第二开关处于闭合状态。当位于所述第一子腔体内的所述第一监控装置监控到所述第一子腔体内的蒸镀材料快要耗尽时，使所述第二子腔体处于工作状态，同时关闭所述第一子腔体，并在所述第一子腔体内进行填料，进行循环操作。
本申请提出了一种蒸镀装置，所述蒸镀装置包括主腔体及位于所述主腔体两侧的至少两个子腔体。所述子腔体用于提供蒸镀工艺中的蒸镀材料。本申请通过将至少一所述子腔体作为备用蒸镀源。当其中一个或一个以上的所述子腔体中的蒸镀材料耗尽时，另一所述子腔体中的备用蒸镀源开始工作，使蒸镀装置能连续镀膜，增加了蒸镀装置的产能。并且，减少了蒸镀装置的维修保养时间。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种蒸镀装置，其中，包括：
    主腔体，包括第一壳体、位于所述第一壳体内的载台及与所述载台相对设置的线源坩埚；
    至少两个子腔体，包括蒸镀源；
    开关，用于控制所述子腔体或所述蒸镀源的打开或关闭；
    至少两个第一通道，所述第一通道包括第一部分和第二部分，所述第一部分位于所述主腔体内，所述第二部分位于所述子腔体内，所述线源坩埚通过所述第一通道与所述蒸镀源连接。
  2. 根据权利要求1所述的蒸镀装置，其中，每一所述第一通道上至少设置有第一开关和第二开关；
    所述第一开关位于所述第一部分上，所述第二开关位于所述第二部分上。
  3. 根据权利要求1所述的蒸镀装置，其中，所述线源坩埚包括第二壳体、及设置于所述第二壳体上的第一通孔。
  4. 根据权利要求3所述的蒸镀装置，其中，所述线源坩埚还包括设置于所述第二壳体内的至少一气流分散板、及设置于所述气流分散板上的第二通孔。
  5. 根据权利要求4所述的蒸镀装置，其中，所述第一通孔的孔径不小于所述第二通孔的孔径。
  6. 根据权利要求1所述的蒸镀装置，其中，所述蒸镀装置至少包括第一子腔体和第二子腔体；
    所述第一子腔体及所述第二子腔体中的所述蒸镀源与至少一所述第一通道连接。
  7. 根据权利要求1所述的蒸镀装置，其中，所述线源坩埚、所述蒸镀源或所述第一通道中至少一者的表面设置有加热装置。
  8. 根据权利要求7所述的蒸镀装置，其中，所述加热装置为加热丝。
  9. 根据权利要求1所述的蒸镀装置，其中，所述载台包括第一开口；
    所述第一开口在第一方向上的间距小于目标基板在第一方向上的长度。
  10. 一种蒸镀装置，其中，包括：
    主腔体，包括第一壳体、位于所述第一壳体内的载台及与所述载台相对设置的线源坩埚；
    至少两个子腔体，包括蒸镀源；
    开关，用于控制所述子腔体或所述蒸镀源的打开或关闭；
    至少两个第一通道，所述第一通道包括第一部分和第二部分，所述第一部分位于所述主腔体内，所述第二部分位于所述子腔体内，所述线源坩埚通过所述第一通道与所述蒸镀源连接;
    位于所述子腔体内的至少一第一监控装置，所述第一监控装置用于监控所述蒸镀源内蒸镀材料的剩余量；
    位于所述主腔体内的至少一第二监控装置，所述第二监控装置用于监控蒸镀材料的速率。
  11. 根据权利要求10所述的蒸镀装置，其中，每一所述第一通道上至少设置有第一开关和第二开关；
    所述第一开关位于所述第一部分上，所述第二开关位于所述第二部分上。
  12. 根据权利要求10所述的蒸镀装置，其中，所述线源坩埚包括第二壳体、及设置于所述第二壳体上的第一通孔。
  13. 根据权利要求12所述的蒸镀装置，其中，所述线源坩埚还包括设置于所述第二壳体内的至少一气流分散板、及设置于所述气流分散板上的第二通孔。
  14. 根据权利要求13所述的蒸镀装置，其中，所述第一通孔的孔径不小于所述第二通孔的孔径。
  15. 根据权利要求10所述的蒸镀装置，其中，所述蒸镀装置至少包括第一子腔体和第二子腔体；
    所述第一子腔体及所述第二子腔体中的所述蒸镀源与至少一所述第一通道连接。
  16. 根据权利要求10所述的蒸镀装置，其中，所述线源坩埚、所述蒸镀源或所述第一通道中至少一者的表面设置有加热装置。
  17. 根据权利要求16所述的蒸镀装置，其中，所述加热装置为加热丝。
  18. 根据权利要求10所述的蒸镀装置，其中，所述载台包括第一开口；
    所述第一开口在第一方向上的间距小于目标基板在第一方向上的长度。
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CN111607761A (zh) * 2019-02-26 2020-09-01 陕西坤同半导体科技有限公司 蒸镀装置及其控制方法
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