WO2019014947A1 - 掩膜板的制造方法和掩膜板 - Google Patents

掩膜板的制造方法和掩膜板 Download PDF

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Publication number
WO2019014947A1
WO2019014947A1 PCT/CN2017/093949 CN2017093949W WO2019014947A1 WO 2019014947 A1 WO2019014947 A1 WO 2019014947A1 CN 2017093949 W CN2017093949 W CN 2017093949W WO 2019014947 A1 WO2019014947 A1 WO 2019014947A1
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Prior art keywords
layer
mask
substrate
conductive magnetic
reinforcing
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PCT/CN2017/093949
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English (en)
French (fr)
Inventor
赵小虎
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深圳市柔宇科技有限公司
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Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to PCT/CN2017/093949 priority Critical patent/WO2019014947A1/zh
Priority to CN201780053958.9A priority patent/CN109643057A/zh
Publication of WO2019014947A1 publication Critical patent/WO2019014947A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Definitions

  • the invention relates to the field of coating, in particular to a method for manufacturing a mask and a mask.
  • Embodiments of the present invention provide a method of manufacturing a mask and a mask.
  • the embodiment of the invention provides a method for manufacturing a mask, which comprises the following steps:
  • the substrate with the patterned structure layer is subjected to a second patterning process to form the mask.
  • a patterned structure layer is formed on the substrate before the substrate is patterned, so that the masking process is not required to be performed after the mask is manufactured, thereby reducing a large production cost.
  • the patterned structure layer is formed with a plurality of spaced vias, the through holes penetrating the reinforcing layer and the conductive magnetic layer,
  • the substrate is formed with an opening, and the plurality of through holes communicate with the opening.
  • the conductive magnetic layer includes a first layer disposed on the reinforcing layer a magnetic material layer, a first metal layer, a second magnetic material layer, and a second metal layer.
  • the first metal layer and the second metal layer each comprise tin.
  • a mask according to an embodiment of the present invention includes a substrate and a patterned structure layer formed on the substrate, the patterned structure layer includes a reinforcement layer and a conductive magnetic layer, and the reinforcement layer is disposed on the substrate
  • the conductive magnetic layer is disposed on the reinforcing layer, and the conductive magnetic layer is composed of a laminate of tin and a magnetic material.
  • the masking process is not required after the mask is manufactured, thereby reducing a large production cost.
  • the conductive magnetic layer includes a first magnetic material layer, a first metal layer, a second magnetic material layer, and a second metal layer that are sequentially disposed on the reinforcement layer.
  • the reinforcing layer is a polyimide layer having a thickness of 3-10 ⁇ m.
  • the conductive magnetic layer has a thickness of 0.5 to 10 ⁇ m.
  • the patterned structure layer is formed with a plurality of spaced vias penetrating through the reinforcing layer and the conductive magnetic layer, the substrate being formed with an opening, the plurality of through holes A hole communicates with the opening.
  • FIG. 1 is a schematic flow chart of a method of manufacturing a mask according to an embodiment of the present invention
  • FIGS. 2 to 6 are schematic views showing processes of a method of manufacturing a mask according to an embodiment of the present invention.
  • FIG. 7 is a schematic plan view of a mask according to an embodiment of the present invention.
  • FIG. 8 is a schematic view showing the structure of a conductive magnetic layer in a mask according to an embodiment of the present invention.
  • a method for manufacturing a mask 100 includes the following steps.
  • a reinforcing layer 20 is formed on the substrate 10 (Fig. 2).
  • a conductive magnetic layer 30 is formed on the reinforcing layer 20 (Fig. 3).
  • the patterned structure layer 22 is formed on the substrate 10 before the patterned substrate 10, so that the masking plate 100 is not required to be subjected to the tensioning process after being manufactured, thereby reducing a large amount of Cost of production.
  • the mask 100 of the embodiment of the present invention can be applied to an evaporation mask for vapor deposition coating.
  • the patterned structure layer 22 is formed with a plurality of spaced vias 222 that penetrate the reinforcing layer 20 and the conductive magnetic layer 30.
  • the substrate 10 is formed with an opening 12, and the plurality of through holes 222 communicate with the opening 12.
  • the opening 12 is usually an open area with a very large area, and even occupies most of the area of the mask 100.
  • a single opening 12 may correspond to two or more through holes 222. In the example of FIG. 6, a single opening 12 corresponds to two through holes 222.
  • the substrate 10 can be provided with two or more openings 12, and the number of the through holes 222 corresponding to each of the openings 12 can be one, three or four, and the like.
  • the target When the coating is evaporated, the target can be placed above the film structure 100. After the vapor deposition material passes through the opening 12 and the through hole 222 in this order, the target material is plated so that a plurality of film layers corresponding to the distribution positions of the through holes 222 are formed on the target.
  • the substrate 10 can be formed with a single opening 12, that is, a single opening 12 corresponds to all of the through holes 222.
  • the number of openings 12 and the number of through holes 222 are equal, and the distribution of the openings 12 corresponds to the distributed position of the through holes 222.
  • one opening 12 can correspond to two or more through holes 222.
  • the correspondence between the opening 12 and the through hole 222 can be configured by referring to the above example, and is not expanded one by one.
  • the method for manufacturing the mask 100 of the embodiment of the present invention uses the conductive magnetic layer 30, which can greatly reduce the thickness of the mask 100 and improve the efficiency of the evaporation material passing through the mask 100 during the evaporation process. Improve the efficiency of production and processing.
  • the conductive magnetic layer 30 has a thickness of 0.5-10 ⁇ m.
  • the thickness of the conductive magnetic layer is 0.5, 1, 3, 5, 6.5, 8, or 10 ⁇ m, which is not particularly limited herein.
  • the reinforcement layer 20 is formed on the substrate 10 using a spin coating process.
  • the spin coating process when compared with preparation techniques such as electrochemical method and physical/chemical vapor deposition method, the spin coating process has a mild operating environment, simple control, and can reduce environmental pollution and save processing energy.
  • the step of forming the conductive magnetic layer 30 on the reinforcement layer 20 is performed using a magnetron sputtering cathode system.
  • the apparatus of the magnetron sputtering system is relatively simple, the processing cost of forming the conductive magnetic layer 30 on the reinforcing layer 20 is reduced.
  • the conductive magnetic layer 30 formed by the magnetron cathode sputtering system also has the characteristics of large area and strong adhesion, which can meet more processing or assembly requirements.
  • the first patterning process comprises a yellow light process.
  • the precision of the patterned structural layer 22 obtained by the yellow light process is higher than that of other process modes, and the working precision of the mask 100 for the evaporation coating operation is improved.
  • the conventional vapor deposition mask is generally formed by using an abrasive tool, but the stamping process is not high in precision, and the tolerance of the product formed by the stamping process is large, and the mask of the embodiment of the present invention is used.
  • 100 adopts a yellow light process, and utilizes a chemical etching process to solve the requirements for high-precision parts in industrial production, and the mask hole 100 formed by the embodiment has a vertical hole wall with no burrs and flatness. Also better.
  • the conventional evaporation coating process usually uses a metal plate, such as a stainless steel mask, but the thickness of the metal is large, and the evaporation material is wasted during the evaporation process, resulting in low evaporation efficiency.
  • the yellow light process is to cover the photoresist on the conductive magnetic layer 30 of the uppermost layer of the mask 100 without etching, and then etch the portion of the photoresist that is not covered by the etching solution, thereby completing the first Patterned processing.
  • a second patterned channel 31 is formed on the first patterned channel 21 and the conductive magnetic layer 30 formed on the first patterned processing layer.
  • the first patterned channel 21 and the second patterned channel 31 form a via 222.
  • the through hole 222 can pass the vapor deposition material through the through hole 222 of the patterned structure layer 22 when the mask plate 100 is subjected to the evaporation coating operation, and adhere to the coated object.
  • the second patterning process includes cutting and separating the substrate 10.
  • the mask 100 can form a through hole penetrating vertically, and when the mask 100 is subjected to the evaporation coating operation, the vapor deposition material penetrates the through hole in the mask 100 to form a film layer on the target. .
  • the mask 100 when the portion to be removed from the substrate 10 is peeled off from the mask 100, the mask 100 can be heated to reduce the adsorption force between the reinforcing layer 20 and the substrate 10 to improve the efficiency of the peeling operation.
  • the width a of the opening 12 formed by the second patterning process of the substrate 10 is larger than the width b of the through hole 222.
  • the material of the substrate 10 may be selected from materials such as quartz, glass, and the like that do not react with the etching solution in the yellow light process. In this way, the supporting and fixing action of the substrate 10 on the film structure 100 is ensured.
  • the material of the reinforcement layer 20 comprises polyimide.
  • the reinforcing layer 20 can withstand high temperatures, and does not undergo morphological changes or structural changes due to high temperature during the fabrication and evaporation processing of the mask 100, thereby ensuring the mask 100 and the evaporation coating. quality.
  • the polyimide has excellent mechanical properties, has large tensile strength, and is adhered to the conductive magnetic layer 30, thereby ensuring the strength and hardness of the mask 100, preventing the mask 100 from being bent, thereby ensuring the mask. The efficiency of plating of the plate 100 during the evaporation coating process.
  • the polyimide also has good dielectric properties, and the conductive magnetic layer 30 is attached to the polyimide, which reduces charge loss and improves the electrical conductivity of the mask 100.
  • a solvent having a higher volatility can be added to increase the quality of the spin coating of the polyimide, and the edge of the reinforcing layer 20 is prevented from being thick. Or the case where fine particles appear on the reinforcing layer 20.
  • the reinforcing layer 20 has a thickness of 3-10 [mu]m.
  • the reinforcing layer 20 of 3-10 ⁇ m greatly reduces the overall thickness of the mask 100, and improves the vapor deposition efficiency when the mask 100 is subjected to the vapor deposition treatment.
  • the polyimide layer also improves the overall hardness and strength of the mask 100, and improves the service life of the mask 100.
  • the thickness of the reinforcing layer 20 is 3, 4, 5.5, 6, 7, 8, or 10 ⁇ m, etc., and is not specifically limited herein.
  • the reinforcing layer 20 has a thickness of 5 ⁇ m.
  • the reinforcing layer 20 can provide better quality support and fixing for the masking plate 100, and at the same time, the thickness of the masking plate 100 is reduced, and the efficiency of the vapor deposition process is improved.
  • the reinforcing layer 20 can also adopt other materials which can better support the conductive magnetic layer 30 and are resistant to high temperatures, and are not specifically limited herein.
  • the conductive magnetic layer 30 includes a first magnetic material layer 32 , a first metal layer 34 , a second magnetic material layer 36 , and a second metal layer 38 that are sequentially disposed on the reinforcement layer 20 . .
  • the first metal layer 34 and the second metal layer 38 are the main materials of the conductive magnetic layer 30.
  • the conductive properties of the conductive magnetic layer 30 are ensured.
  • the first magnetic material layer 32 and the second magnetic material layer 36 reduce the amount of bending of the mask 100 during the subsequent use of the mask 100, thereby ensuring that the vapor deposition material can smoothly pass through the mask during the evaporation process.
  • the plate 100 realizes a coating operation.
  • the first metal layer 34 and the second metal layer 38 each comprise tin.
  • tin has a small coefficient of thermal expansion, and tin is used as the material of the first metal layer 34 and the second metal layer 38, avoiding the first metal layer 34 and the second when the mask 100 is in a high temperature environment.
  • the metal layer 38 undergoes a large deformation, resulting in a large amount of bending of the mask 100, which affects the quality of the evaporation.
  • the material of the first metal layer 34 and the second metal layer 38 may also be Invar.
  • the same effect as the main material of the first metal layer 34 and the second metal layer 38 can be achieved and used.
  • the ambient temperature for performing the processing on the conductive magnetic layer 30 and the reinforcing layer 20 is higher than the ambient temperature for performing the vapor deposition treatment using the mask 100.
  • the amount of bending of the mask 100 can be greatly reduced, and the vapor deposition efficiency at the time of performing the vapor deposition process of the mask 100 can be further improved.
  • a mask 100 of an embodiment of the present invention includes a substrate 10 and a patterned structure layer 22 formed on the substrate 10.
  • the patterned structure layer 22 includes a reinforcement layer 20 and a conductive magnetic layer 30.
  • the reinforcing layer 20 is disposed on the substrate 10, and the conductive magnetic layer 30 is disposed on the reinforcing layer 20.
  • the conductive magnetic layer 30 is composed of a laminate of tin and a magnetic material.
  • the mask 100 of the embodiment of the present invention due to the supporting action of the substrate 10, does not require a tensioning process after the mask 100 is manufactured, thereby reducing a large amount of production cost.
  • the conductive magnetic layer 30 includes a first magnetic material layer 32, a first metal layer 34, a second magnetic material layer 36, and a second metal layer 38 that are sequentially disposed on the reinforcement layer 20.
  • the conductive magnetic layer 30 has a thickness of 0.5-10 ⁇ m.
  • the conductivity of the mask 100 is ensured.
  • the case where the conductive magnetic layer 30 is too thick to prevent the reinforcing layer 20 from fixing and supporting the mask 100 well is avoided.
  • the patterned structure layer 22 is formed with a plurality of vias 222 spaced apart.
  • the hole 222 penetrates the reinforcing layer 20 and the conductive magnetic layer 30, the substrate 10 is formed with an opening 12, and the plurality of through holes 222 communicate with the opening 12.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • the meaning of "a plurality” is two or more unless specifically and specifically defined.
  • the terms “installation”, “connected”, “connected”, “fixed” and the like shall be understood broadly, and may be either a fixed connection or a detachable connection, unless explicitly stated and defined otherwise. , or integrated; can be mechanical connection, or can be electrical connection; can be directly connected, or can be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction of two elements.
  • installation can be understood on a case-by-case basis.
  • the first feature "on” or “under” the second feature may be a direct contact of the first and second features, or the first and second features may be indirectly through an intermediate medium, unless otherwise explicitly stated and defined. contact.
  • the first feature "above”, “above” and “above” the second feature may be that the first feature is directly above or above the second feature, or merely that the first feature level is higher than the second feature.
  • the first feature “below”, “below” and “below” the second feature may be that the first feature is directly below or obliquely below the second feature, or merely that the first feature level is less than the second feature.

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Abstract

一种掩膜板(100)的制造方法，包括以下步骤：在基板(10)上形成加强层(20)；在加强层(20)上形成导电磁性层(30)；对带有加强层(20)的导电磁性层(30)进行第一图案化处理以得到形成在基板(10)上的图案化结构层(22)；对带有图案化结构层(22)的基板(10)进行第二图案化处理以形成掩膜板(100)。

Description

掩膜板的制造方法和掩膜板 技术领域
本发明涉及镀膜领域，具体涉及一种掩膜板的制造方法和掩膜板。
背景技术
在相关技术中，制作掩膜板时，需要进行拉紧处理，因此需要投入大量进行拉紧处理的相关设备，导致掩膜板的加工成本高。
发明内容
本发明实施方式提供一种掩膜板的制造方法和掩膜板。
本发明实施方式提供一种掩膜板的制造方法，其特征在于，包括以下步骤：
在基板上形成加强层；
在所述加强层上形成导电磁性层；
对带有所述加强层的所述导电磁性层进行第一图案化处理以得到形成在所述基板上的图案化结构层；
对带有所述图案化结构层的所述基板进行第二图案化处理以形成所述掩膜板。
本发明实施方式的掩膜板的制造方法中，在图案化基板前先在基板上形成图案化结构层，使得掩膜板制造完毕后无需进行拉紧处理，从而降低了大量生产成本。
在某些实施方式中，在所述第一图案化处理后，所述图案化结构层形成有间隔的多个通孔，所述通孔贯穿所述加强层和所述导电磁性层，在所述第二图案化处理后，所述基板形成有开口，所述多个通孔连通所述开口。
在某些实施方式中，所述导电磁性层包括依次设置在所述加强层上的第 一磁性材料层、第一金属层、第二磁性材料层和第二金属层。
在某些实施方式中，所述第一金属层和所述第二金属层均包括锡。
本发明实施方式的一种掩膜板，包括基板和形成在所述基板上的图案化结构层，所述图案化结构层包括加强层和导电磁性层，所述加强层设置在所述基板上，所述导电磁性层设置在加强层上，所述导电磁性层由锡和磁性材料层叠构成。
本发明实施方式的掩膜板，由于基板的支撑作用，掩膜板制造完毕后无需进行拉紧处理，从而降低了大量生产成本。
在某些实施方式中，所述导电磁性层包括依次设置在所述加强层上的第一磁性材料层、第一金属层、第二磁性材料层和第二金属层。
在某些实施方式中，所述加强层为聚酰亚胺层，所述加强层的厚度为3-10μm。
在某些实施方式中，所述导电磁性层的厚度为0.5-10μm。
在某些实施方式中，所述图案化结构层形成有间隔的多个通孔，所述通孔贯穿所述加强层和所述导电磁性层，所述基板形成有开口，所述多个通孔连通所述开口。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施方式的描述中将变得明显和容易理解，其中：
图1是本发明实施方式的掩膜板的制造方法的流程示意图；
图2-图6是本发明实施方式的掩膜板的制造方法的过程示意图；
图7是本发明实施方式的掩膜板的平面示意图；
图8是本发明实施方式的掩膜板中导电磁性层的结构示意图。
具体实施方式
以下结合附图对本发明的实施方式作进一步说明。附图中相同或类似的标号自始至终表示相同或类似的元件或具有相同或类似功能的元件。
另外，下面结合附图描述的本发明的实施方式是示例性的，仅用于解释本发明的实施方式，而不能理解为对本发明的限制。
请参阅图1-图7，本发明实施方式提供的一种掩膜板100的制造方法，包括以下步骤。
S1：在基板10上形成加强层20(如图2)。
S2：在加强层20上形成导电磁性层30(如图3)。
S3：对带有加强层20的导电磁性层30进行第一图案化处理以得到形成在基板10上的图案化结构层22(如图4和图5)。
S4：对带有图案化结构层22的基板10进行第二图案化处理以形成掩膜板100(如图6和图7)。
本发明实施方式的掩膜板100的制造方法中，在图案化基板10前先在基板10上形成图案化结构层22，使得掩膜板100制造完毕后无需进行拉紧处理，从而降低了大量生产成本。
具体地，本发明实施方式的掩膜板100可应用于蒸发镀膜遮挡用的蒸镀掩膜板。第一图案化处理后，图案化结构层22形成有间隔的多个通孔222，通孔222贯穿加强层20和导电磁性层30。第二图案化处理后，基板10形成有开口12，多个通孔222连通开口12。需要说明的是，开口12通常会是一个面积非常大的开口区域，甚至占据掩膜板100的大部分面积。单个开口12可对应于两个或以上的通孔222。在图6的示例中，单个开口12对应于两个通孔222。可以理解，在其它示例中，基板10可开设有两个或以上的开口12，每个开口12对应的通孔222的数量可为一个，三个或四个等其它数量。
在蒸发镀膜时，可将目标物放置在膜层结构100的上方。蒸镀材料依次穿过开口12和通孔222后，镀上目标物上，使目标物上形成有与通孔222分布位置相对应的多个膜层。
在一些例子中，基板10可形成有单一开口12，也是说，单个开口12对应连通所有通孔222。在另一些例子中，开口12与通孔222的数量相等，且开口12的分布位置与通孔222的分布位置对应。在再一些例子中，一个开口12可对应两个或以上的通孔222。其它例子，可参上述例子进行配置开口12和通孔222的对应关系，在此不再一一展开。
另外，本发明实施方式的掩膜板100的制造方法使用导电磁性层30，这样可大大减小掩膜板100的厚度，提高了蒸镀过程中蒸镀材料穿过掩膜板100的效率，提高了生产加工的效益。
在某些实施方式中，所述导电磁性层30的厚度为0.5-10μm。例如，导电磁性层的厚度为0.5、1、3、5、6.5、8或10μm，在此不再具体限定。
在某些实施方式中，采用旋涂工艺在基板10上形成加强层20。
如此，与电化学法、物理/化学气相沉积法等制备技术对比时，旋涂工艺的操作环境温和、控制简单，且能降低环境污染、节省加工能源。
在某些实施方式中，在加强层20上形成导电磁性层30的步骤是利用磁控溅射阴极系统进行。
由于磁控阴极溅射系统的设备较为简单，从而降低了在加强层20上形成导电磁性层30的加工成本。同时，通过磁控阴极溅射系统形成的导电磁性层30还具有面积大和附着力强的特性，能满足更多加工或者装配需求。
在某些实施方式中，第一图案化处理包括黄光制程。
如此，相比其他制程方式，黄光制程得到的图案化结构层22的精度较高，提高了掩膜板100用于蒸发镀膜操作时的工作精度。
具体地，传统的蒸镀掩膜板一般都是采用磨具冲压成型，但是冲压工艺精度不高，且冲压工艺形成的产品的公差大，而本发明实施方式的掩膜板 100采用黄光制程，利用化学蚀刻的工艺，解决了工业生产中对高精密零部件的要求，且本实施方式制成的掩膜板100形成的通孔的孔壁垂直，没有毛刺，平面度也较好。同时，传统蒸发镀膜工艺通常采用金属板，比如不锈钢掩膜板，但是金属的厚度较大，蒸镀过程中造成蒸镀材料的浪费，导致蒸镀效率较低。
具体地，黄光制程就是在掩膜板100最上层的导电磁性层30上不需要进行蚀刻的部位覆盖光刻胶，然后通过蚀刻液将未覆盖光刻胶的部位蚀刻掉，从而完成第一图案化处理。经过第一图案化处理后的加强层20上形成第一图案化通道21和导电磁性层30上形成第二图案化通道31，第一图案化通道21和第二图案化通道31形成通孔222，通孔222可以使掩膜板100进行蒸发镀膜操作时蒸镀材料通过图案化结构层22的通孔222，附着镀膜对象上。
在某些实施方式中，第二图案化处理包括对基板10进行切割和分离。
如此，掩膜板100可形成上下贯通的通孔，使得掩膜板100进行蒸发镀膜操作时，蒸镀材料穿设掩膜板100上的通孔，在目标物上形成膜层。。
具体地，在将基板10需去掉的部位从掩膜板100上剥离的时候，可以加热掩膜板100，减小加强层20和基板10之间的吸附力，以提高剥离操作的效率。
在本实施方式中，基板10经第二图案化处理后形成的开口12的宽度a比通孔222的宽度b大。如此，使用掩膜板100进行蒸发镀膜操作时，更易于蒸镀材料通过掩膜板100，进入位于掩膜板100上的目标物。
具体地，基板10的材料可选自石英、玻璃等不与黄光制程中的蚀刻液反应的材料。如此，保证了基板10对膜层结构100的支撑作用和固定作用。
在某些实施方式中，加强层20的材料包括聚酰亚胺。
如此，加强层20能耐高温，在进行掩膜板100制造和蒸镀处理时不会因温度较高而发生形态改变或者结构变化，保证了掩膜板100和蒸发镀膜的 质量。同时，聚酰亚胺具有优良的机械性能，抗张强度大，和导电磁性层30附着在一起，保证了掩膜板100的强度和硬度，避免掩膜板100发生弯曲，进而保证了掩膜板100进行蒸发镀膜处理时镀膜的效率。
此外，聚酰亚胺还具有良好的介电性能，导电磁性层30附着在聚酰亚胺上，减小了电荷损失，提高了掩膜板100的导电性能。
具体地，聚酰亚胺可通过旋涂工艺形成加强层20时，并可加入挥发性较高的溶剂，增加聚酰亚胺旋涂成膜的质量，避免出现加强层20的边缘较厚，或加强层20上出现微细颗粒的情况。
在某些实施方式中，加强层20的厚度为3-10μm。如此，3-10μm的加强层20大大降低了掩膜板100的整体厚度，提高掩膜板100进行蒸镀处理时的蒸镀效率。同时，聚酰亚胺层也提高了掩膜板100的整体硬度和强度，提高了掩膜板100的使用寿命。
在一些例子中，加强层20的厚度为3、4、5.5、6、7、8、或10μm等，在此不再具体限定。
较佳地，本实施方式的掩膜板100中，加强层20的厚度为5μm。如此，加强层20能为掩膜板100提供较好的质支撑和固定作用，同时，又减小了掩膜板100的厚度，提高了蒸镀处理的效率。
当然，加强层20还能采用其他能较好支撑导电磁性层30且耐高温的材料，在此不做具体限制。
请参阅图8，在某些实施方式中，导电磁性层30包括依次设置在加强层20上的第一磁性材料层32、第一金属层34、第二磁性材料层36和第二金属层38。
具体地，第一金属层34和第二金属层38是导电磁性层30的主要材料。如此，保证了导电磁性层30的导电性能。第一磁性材料层32和第二磁性材料层36则在掩膜板100投入后续使用过程中减少了掩膜板100的弯曲量，进而保证了蒸镀过程中，蒸镀材料能顺畅通过掩膜板100，实现镀膜操作。
在某些实施方式中，第一金属层34和第二金属层38均包括锡。
和其他金属相比，锡的热膨胀系数较小，使用锡作为第一金属层34和第二金属层38的材料，避免了掩膜板100位于高温环境中时，第一金属层34和第二金属层38发生较大形变，导致掩膜板100产生较大弯曲量，影响蒸镀的质量。
在某些实施方式中，第一金属层34和第二金属层38的材料也可采用因瓦合金。如此，也能达到和使用锡作为第一金属层34和第二金属层38的主要材料相同的效果。
需要注意的是，本发明实施方式的掩膜板100的制造方法中，对导电磁性层30和加强层20进行制程处理的环境温度需高于利用掩膜板100进行蒸镀处理的环境温度，如此，掩膜板100的弯曲量能大大降低，进一步提高掩膜板100进行蒸镀处理时的蒸镀效率。
本发明实施方式的一种掩膜板100，包括基板10和形成在基板10上的图案化结构层22，图案化结构层22包括加强层20和导电磁性层30。加强层20设置在基板10上，导电磁性层30设置在加强层20上。导电磁性层30由锡和磁性材料层叠构成。
本发明实施方式的掩膜板100，由于基板10的支撑作用，掩膜板100制造完毕后无需进行拉紧处理，从而降低了大量生产成本。
需要说明的是，上述对掩膜板100的制造方法的实施方式和有益效果的解释说明也适用于本实施方式的掩膜板100，为避免冗余，此不再详细展开。
在某些实施方式中，导电磁性层30包括依次设置在加强层20上的第一磁性材料层32、第一金属层34、第二磁性材料层36和第二金属层38。
在某些实施方式中，导电磁性层30的厚度为0.5-10μm。
如此，保证了掩膜板100的导电性能。同时，避免了导电磁性层30过厚使加强层20无法很好地固定和支撑掩膜板100的情况。
在某些实施方式中，图案化结构层22形成有间隔的多个通孔222，通 孔222贯穿加强层20和导电磁性层30，基板10形成有开口12，多个通孔222连通开口12。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特 征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (9)

  1. 一种掩膜板的制造方法，其特征在于，包括以下步骤：
    在基板上形成加强层；
    在所述加强层上形成导电磁性层；
    对带有所述加强层的所述导电磁性层进行第一图案化处理以得到形成在所述基板上的图案化结构层；
    对带有所述图案化结构层的所述基板进行第二图案化处理以形成所述掩膜板。
  2. 根据权利要求1所述的掩膜板的制造方法，其特征在于，在所述第一图案化处理后，所述图案化结构层形成有间隔的多个通孔，所述通孔贯穿所述加强层和所述导电磁性层，在所述第二图案化处理后，所述基板形成有开口，所述多个通孔连通所述开口。
  3. 根据权利要求1所述的掩膜板的制造方法，其特征在于，所述导电磁性层包括依次设置在所述加强层上的第一磁性材料层、第一金属层、第二磁性材料层和第二金属层。
  4. 根据权利要求3所述的掩膜板的制造方法，其特征在于，所述第一金属层和所述第二金属层均包括锡。
  5. 一种掩膜板，其特征在于，包括基板和形成在所述基板上的图案化结构层，所述图案化结构层包括加强层和导电磁性层，所述加强层设置在所述基板上，所述导电磁性层设置在加强层上。
  6. 根据权利要求5所述的掩膜板，其特征在于，所述导电磁性层包括 依次设置在所述加强层上的第一磁性材料层、第一金属层、第二磁性材料层和第二金属层。
  7. 根据权利要求5所述的掩膜板，其特征在于，所述加强层为聚酰亚胺层，所述加强层的厚度为3-10μm。
  8. 根据权利要求5所述的掩膜板，其特征在于，所述导电磁性层的厚度为0.5-10μm。
  9. 根据权利要求5所述的掩膜板，其特征在于，所述图案化结构层形成有间隔的多个通孔，所述通孔贯穿所述加强层和所述导电磁性层，所述基板形成有开口，所述多个通孔连通所述开口。
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