WO2018230567A1 - 光学フィルタシステム - Google Patents
光学フィルタシステム Download PDFInfo
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- WO2018230567A1 WO2018230567A1 PCT/JP2018/022446 JP2018022446W WO2018230567A1 WO 2018230567 A1 WO2018230567 A1 WO 2018230567A1 JP 2018022446 W JP2018022446 W JP 2018022446W WO 2018230567 A1 WO2018230567 A1 WO 2018230567A1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
Definitions
- the present disclosure relates to an optical filter system including a Fabry-Perot interference filter.
- a Fabry-Perot interference filter that includes a pair of mirror portions that are arranged so as to face each other via a gap and whose distance is adjusted by electrostatic force (see, for example, Patent Document 1).
- the distance between the pair of mirror portions is adjusted by controlling the applied voltage.
- a “Pull-in” phenomenon may occur.
- the mirror parts exert an attractive force on each other, and the mirror parts mechanically come into firm contact with each other, which may cause a malfunction in the Fabry-Perot interference filter.
- it is conceivable to avoid the pull-in phenomenon by adopting control based on the amount of electric charge stored between the mirror portions, but further improvement is required from the viewpoint of reliability.
- An object of one aspect of the present disclosure is to provide a highly reliable optical filter system.
- An optical filter system includes a Fabry-Perot interference filter and a controller that controls the Fabry-Perot interference filter.
- the Fabry-Perot interference filter includes a first mirror unit and a first mirror via a gap.
- the second mirror part which is disposed so as to face the part and the distance between the first mirror part in the light transmission region is adjusted by electrostatic force, and the first mirror part and the second mirror part as seen from the direction facing each other.
- the first drive electrode provided on the first mirror portion so as to surround the light transmission region, the second drive electrode provided on the second mirror portion so as to face the first drive electrode, and the above direction.
- a first monitor electrode which is provided in the first mirror portion so as to at least partially overlap the light transmission region when viewed, and is electrically insulated from the first drive electrode; And a second monitor electrode that is provided in the second mirror portion and is electrically insulated from the second drive electrode, and the controller drives a drive current between the first drive electrode and the second drive electrode. Between the first monitor electrode and the second monitor electrode, an alternating current having a frequency higher than the resonance frequency of the first mirror unit and the second mirror unit is generated between the first monitor electrode and the second monitor electrode.
- the Fabry-Perot interference filter includes a first monitor electrode and a second monitor electrode in addition to the first drive electrode and the second drive electrode.
- the alternating current having a frequency higher than the resonance frequency of the first mirror part and the second mirror part is applied between the first monitor electrode and the second monitor electrode, the first monitor electrode and the second monitor electrode Based on the alternating voltage generated between the electrodes, the capacitance between the first mirror part and the second mirror part is calculated.
- the distance between mirror parts can be calculated based on the said electrostatic capacitance, and the actual distance between mirror parts can be monitored during operation
- the first monitor electrode is provided on the first mirror unit so that at least a part of the first monitor electrode and the second mirror unit overlap with the light transmission region when viewed from the direction in which the first mirror unit and the second mirror unit face each other.
- the second monitor electrode is provided on the second mirror portion so as to face the first monitor electrode, and is electrically insulated from the second drive electrode.
- the first drive electrode may be exposed in the air gap.
- the first drive electrode can be brought close to the second drive electrode, and an electrostatic force can be suitably generated between the mirror portions.
- the second drive electrode may be disposed on the surface opposite to the gap of the second mirror part. In this case, the process of forming the second drive electrode can be facilitated.
- the second drive electrode may be exposed to the air gap.
- the second drive electrode can be brought close to the first drive electrode, and an electrostatic force can be generated more suitably between the mirror portions.
- the first monitor electrode may be exposed in the air gap.
- the first monitor electrode can be brought closer to the second monitor electrode, and the distance between the mirror portions can be monitored more suitably.
- the second monitor electrode may be exposed in the air gap.
- the second monitor electrode can be brought closer to the first monitor electrode, and the distance between the mirror portions can be monitored more suitably.
- the second monitor electrode may be disposed on the surface opposite to the gap of the second mirror portion. In this case, the process of forming the second monitor electrode can be facilitated.
- the second drive electrode and the second monitor electrode may be separated from each other in the above direction. In this case, the electrical insulation between the second drive electrode and the second monitor electrode can be improved.
- a highly reliable optical filter system can be provided.
- FIG. 1 is a plan view of a Fabry-Perot interference filter provided in an optical filter system according to an embodiment.
- FIG. 2 is a sectional view of the Fabry-Perot interference filter taken along line II-II in FIG.
- FIG. 3 is a cross-sectional view of the Fabry-Perot interference filter taken along line III-III in FIG.
- FIG. 4 is a plan view schematically showing a polysilicon layer in which the first drive electrode and the first monitor electrode are formed.
- FIG. 5 is a configuration diagram of the optical filter system.
- 6A and 6B are cross-sectional views of a Fabry-Perot interference filter according to a first modification.
- FIGS. 7A and 7B are cross-sectional views of a Fabry-Perot interference filter according to a second modification.
- FIGS. 8A and 8B are cross-sectional views of a Fabry-Perot interference filter according to a third modification.
- FIGS. 9A and 9B are cross-sectional views of a Fabry-Perot interference filter according to a fourth modification.
- FIGS. 10A and 10B are cross-sectional views of a Fabry-Perot interference filter according to a fifth modification.
- FIG. 11 is a simplified diagram of a micromachined MEMS / MOEMS parallel plate capacitor.
- FIG. 12 is a schematic diagram of the same system as FIG.
- FIG. 14 is a graph of an example using the same parameters as in FIG. The behavior of the system and the effect on the system change dramatically when voltage control is replaced with charge control. If the system is controlled by the amount of charge, a much wider interval range can be addressed without any “pulling” phenomenon.
- the spacing d varies linearly with Q 2 , which is the square of the stored charge.
- FIG. 14 shows which charge quantity Q results in which interval d in the system characterized by FIGS. There is no ambiguity in this relationship d (Q), so this function can be easily transformed to give Q (d), as was done by Equation 8 below.
- FIG. 15 is a graph showing the interval d with respect to “generated voltage”. The graph must be understood as follows.
- the charge Q (d) is a voltage V (d ) Is generated. It is interesting to see that: 1.
- the voltage V (d) exhibits a maximum value V max as a function of the distance d. As long as the voltage stays below the maximum voltage V max , there are multiple stable solutions with a spacing d for a given voltage V. If the voltage V exceeds V max , there is no longer a stable solution for d. In this situation, Equation 6 described below describing the condition of d as a function of voltage is a cubic equation, and there are 0, 1, 2, or 3 solutions depending on the parameter V. to cause.
- FIG. 16 is a graph showing the resulting voltage V versus the amount of charge Q applied as a control parameter to a capacitor of a MEMS / MOEMS system having a capacitive structure and at least one spring-loaded movable electrode.
- the resulting voltage has a maximum value 203 whose value is V max .
- the second disclosure relates to all MEMS / MOEMS actuator capacitor systems having at least one such maximum value of V occurring for Q.
- the operation at the branch 201 of the curve can be appropriately controlled by voltage control.
- the operating point at branch 202 cannot be addressed by voltage control for the reasons described in the description of the following figure. However, the operating point at the branch 202 can be set by using the charge amount as a suitable control.
- FIG. 17 is a graph showing a standard operation using voltage control in combination with FIG. 14 and FIG. 16.
- FIG. 18 is a graph showing a situation in which a “pull-in” phenomenon occurs when the voltage control of the actuator is used in combination with FIG. 14 and FIG. 16. If the control voltage level 205 exceeds the maximum resulting voltage V max 203, this voltage difference results in a current that increases the charge quantity Q.
- FIG. 19 is a graph showing the situation associated with resetting the actuator capacitor, combining FIGS. 14 and 16.
- the actuator has moved to the operating point 204 on the branch 202 of the curve V (Q) by the method of charge control, so that it is charged to the amount of charge Q and then the electrode 106 is disconnected from the current source. Become. In order to reset the actuator to a specific voltage level, a control voltage 205 lower than the voltage V (Q) generated at the operating point 204 is applied.
- FIG. 20 is a diagram illustrating a situation related to resetting the actuator capacitor, which is a combination of FIG.
- the capacitor “A” 110 on the left is a MEMS / MOEMS actuator capacitor in which the distance d between the electrode plates 103 and 105 is variable.
- the second capacitor “B” 111 having a much smaller capacitance C B causes the voltage higher than the maximum voltage of FIG. 15 by closing the switch “S2” 113. It can be charged with V B 114.
- voltage 115 of capacitor “A” is measured.
- the capacitor “B” 111 is disconnected from the voltage source V B 114 by the switch “S2” 113, and the capacitor “A” 110 and the capacitor “B” 111 are connected by the switch “S1” 112.
- the voltage V produced at capacitor “A” 110 and capacitor “B” 111 (or only capacitor “A” after disconnecting switch “S1” 112 again) is measured (after “switch“ S1 ”112 is opened). ").
- the total charge amount (respectively transferred charge amount) can be calculated from the known capacitance C B , the voltage V B , and the voltage V across the capacitor before connecting the capacitor “B”. Therefore, if the total charge Q and the resulting voltage V are known, the actual capacitance C of the MEMS / MOEMS actuator can be calculated and the spacing d between the plates (by knowing the effective area A) Can also be calculated. That is, by controlling the total Q and measuring the resulting V, it is possible to calculate the actual spacing d by “static” capacitance measurement.
- FIG. 22 is a schematic diagram of an electrostatic actuator control system according to the second disclosure.
- FIG. 23 is a graph showing the typical behavior of a parallel plate electrostatic actuator where the voltage across the actuator is shown as a function of the total charge deposited on the actuator electrode.
- FIG. 24 is a graph showing the typical behavior of the effective capacitance of a parallel plate electrostatic actuator, showing the first derivative dQ / dV of voltage V as a function of total charge Q.
- FIG. 25 is a diagram showing an example of a bipolar current source that can set the flow of the bidirectional current I through the electrostatic actuator by the control voltage V. This circuit is known as a Howland current pump.
- FIG. 23 is a graph showing the typical behavior of a parallel plate electrostatic actuator where the voltage across the actuator is shown as a function of the total charge deposited on the actuator electrode.
- FIG. 24 is a graph showing the typical behavior of the effective capacitance of a parallel plate electrostatic actuator, showing the first derivative dQ / d
- FIG. 26 is a diagram showing another example of a bipolar current source in which the flow of the bidirectional current I through the electrostatic actuator can be set by the control voltage V.
- This circuit is known as a transconductance amplifier.
- FIG. 27 is a diagram showing a complete control system for an electrostatic actuator consisting of an electrostatic actuator controller operated by a digital controller system ( ⁇ C) shown in FIG.
- FIG. 28 is a schematic diagram illustrating an electrostatic actuator control system according to the second disclosure, with a reduced number of switches.
- FIG. 29 is a schematic diagram illustrating an electrostatic actuator control system according to the second disclosure, including a small signal AC current injection source for HF capacitance measurement.
- FIG. 30 is a graph showing the situation when a parallel plate capacitor is simplified as a simple model of a MEMS / MOEMS capacitive structure with at least one movable spring electrode.
- the actuator is driven by controlling the amount of charge according to the second disclosure.
- the resulting voltage V (Q) exhibits a maximum value 203 due to a rapid increase in actuator capacitance towards a smaller distance d between the electrodes.
- FIG. 31 shows a schematic diagram of an electrostatic actuator control system according to the second disclosure.
- a current source 311 that can be switched by a switch 312 is connected to a capacitor 310 of an actuator having at least one movable electrode.
- the resulting voltage can be measured by a voltage measurement system 313 that can be connected or disconnected by a switch 314.
- FIG. 32 is a diagram showing the electrostatic actuator control system of FIG. 31 when an actual equivalent circuit of a capacitor is taken into consideration.
- a separation resistor R leak 320, an equivalent series resistance ESR 321 and an equivalent series inductance ESL 322 are shown.
- FIG. 33 is a diagram illustrating the electrostatic actuator control system of FIG. 32 when it is assumed that the separation resistor R leak 320 cannot be ignored and the equivalent series resistance ESR 321 and the equivalent series inductance ESL 322 are negligible.
- FIG. 34 shows the electrostatic actuator control system of FIG. 33 with at least one precision resistor 350 introduced with an associated switch 351 belonging to that resistor.
- FIG. 35 illustrates the electrostatic actuator control system of FIG. 34 with one additional switch 318 introduced that allows the capacitor 310 of the actuator unit 370 to be connected or disconnected from the electrostatic actuator controller 360 along with its isolation resistor R leak 320.
- FIG. 36 is a diagram illustrating the electrostatic actuator control system of FIG. 35 in which an AC modulated current source 316 that can be connected or disconnected by a switch 317 is introduced.
- Frequency of the modulation current is much higher than the vibration frequency of the actuator at the operating point defined by the control charge Q c.
- the HFAC modulation current source and voltage measurement system 313 that can detect the amplitude and phase of the resulting AC modulation voltage form an impedance measurement unit 380 that allows, among other things, the capacitance of the actuator unit 310 to be calculated.
- Unit 380 sends a detection value which is input a closed feedback loop to hold the operating point defined by the control charge Q c constant.
- the Fabry-Perot interference filter 1 includes a substrate 11.
- the substrate 11 has a first surface 11a and a second surface 11b opposite to the first surface 11a.
- middle layer 23, and the 2nd laminated body 24 are laminated
- a gap (air gap) S is defined between the first stacked body 22 and the second stacked body 24 by a frame-shaped intermediate layer 23.
- the shape and positional relationship of each part when viewed from a direction perpendicular to the first surface 11a are as follows.
- the outer edge of the substrate 11 has, for example, a rectangular shape with a side length of about several hundred ⁇ m to several mm.
- the outer edge of the substrate 11 and the outer edge of the second stacked body 24 coincide with each other.
- the outer edge of the antireflection layer 21, the outer edge of the first laminated body 22, and the outer edge of the intermediate layer 23 coincide with each other.
- the substrate 11 has an outer edge portion 11 c located outside the outer edge of the intermediate layer 23 with respect to the center of the gap S.
- the outer edge portion 11c has a frame shape, for example, and surrounds the intermediate layer 23 when viewed from a direction perpendicular to the first surface 11a.
- the space S has a circular shape, for example.
- the Fabry-Perot interference filter 1 transmits light having a predetermined wavelength in a light transmission region 1a defined at the center thereof.
- the light transmission region 1a is, for example, a cylindrical region.
- the substrate 11 is made of, for example, silicon, quartz, or glass.
- the antireflection layer 21 and the intermediate layer 23 are made of, for example, silicon oxide.
- the thickness of the intermediate layer 23 is, for example, several tens nm to several tens ⁇ m.
- the portion of the first laminate 22 corresponding to the light transmission region 1a functions as the first mirror portion 31.
- the first mirror unit 31 is a fixed mirror.
- the first mirror part 31 is disposed on the first surface 11 a via the antireflection layer 21.
- the first stacked body 22 is configured by alternately stacking a plurality of polysilicon layers 25 and a plurality of silicon nitride layers 26 one by one.
- a polysilicon layer 25a, a silicon nitride layer 26a, a polysilicon layer 25b, a silicon nitride layer 26b, and a polysilicon layer 25c are stacked on the antireflection layer 21 in this order.
- the optical thicknesses of the polysilicon layer 25 and the silicon nitride layer 26 constituting the first mirror part 31 are preferably an integral multiple of 1/4 of the central transmission wavelength.
- the 1st mirror part 31 may be arrange
- the portion of the second laminate 24 corresponding to the light transmission region 1a functions as the second mirror portion 32.
- the second mirror unit 32 is a movable mirror.
- the second mirror part 32 faces the first mirror part 31 via the gap S on the side opposite to the substrate 11 with respect to the first mirror part 31.
- the direction in which the first mirror part 31 and the second mirror part 32 face each other is parallel to the direction perpendicular to the first surface 11a.
- the second stacked body 24 is disposed on the first surface 11a via the antireflection layer 21, the first stacked body 22, and the intermediate layer 23.
- the second stacked body 24 is configured by alternately stacking a plurality of polysilicon layers 27 and a plurality of silicon nitride layers 28 one by one.
- a polysilicon layer 27a, a silicon nitride layer 28a, a polysilicon layer 27b, a silicon nitride layer 28b, and a polysilicon layer 27c are stacked on the intermediate layer 23 in this order.
- the optical thicknesses of the polysilicon layer 27 and the silicon nitride layer 28 constituting the second mirror part 32 are preferably an integral multiple of 1/4 of the central transmission wavelength.
- a silicon oxide layer may be used instead of the silicon nitride layer.
- titanium oxide, tantalum oxide, zirconium oxide, magnesium fluoride, aluminum oxide, calcium fluoride, silicon, germanium, zinc sulfide and the like are used. May be.
- a plurality of through holes are formed in a portion corresponding to the gap S in the second stacked body 24 (a portion overlapping the gap S in plan view). These through holes reach the gap S from the surface 24 a opposite to the intermediate layer 23 of the second stacked body 24. These through holes are formed to such an extent that the function of the second mirror part 32 is not substantially affected. These through-holes may be used to form a void S by removing a part of the intermediate layer 23 by etching.
- the second laminate 24 further includes a covering portion 33 and a peripheral edge portion 34 in addition to the second mirror portion 32.
- coated part 33, and the peripheral part 34 are integrally formed so that it may have a part of mutually the same laminated structure, and may mutually be followed.
- the covering portion 33 surrounds the second mirror portion 32 in plan view.
- the covering portion 33 covers the surface 23a and the side surface 23b opposite to the substrate 11 of the intermediate layer 23, the side surface 22a of the first stacked body 22, and the side surface 21a of the antireflection layer 21, and covers the first surface 11a. Has reached.
- the peripheral portion 34 surrounds the covering portion 33 in plan view.
- the peripheral edge portion 34 is located on the first surface 11a in the outer edge portion 11c.
- the outer edge of the peripheral edge 34 coincides with the outer edge of the substrate 11 in plan view.
- the peripheral edge portion 34 is thinned along the outer edge of the outer edge portion 11c. That is, the part along the outer edge of the outer edge part 11c in the peripheral part 34 is thinner than the other parts other than the part along the outer edge in the peripheral part 34.
- the peripheral portion 34 is thinned by removing a part of the polysilicon layer 27 and the silicon nitride layer 28 constituting the second stacked body 24.
- the peripheral edge portion 34 includes a non-thinned portion 34a that is continuous with the covering portion 33 and a thinned portion 34b that surrounds the non-thinned portion 34a.
- the thinned portion 34b the polysilicon layer 27 and the silicon nitride layer 28 other than the polysilicon layer 27a provided directly on the first surface 11a are removed.
- the first mirror unit 31 is provided with the first drive electrode 12 and the first monitor electrode 13.
- the first drive electrode 12 has, for example, an annular shape in plan view, and surrounds the light transmission region 1a.
- the first drive electrode 12 is disposed on the surface 31 a on the gap S side of the first mirror portion 31 and is exposed to the gap S.
- the first drive electrode 12 is formed, for example, by doping impurities to reduce the resistance of the polysilicon layer 25c.
- the first monitor electrode 13 overlaps the light transmission region 1a in plan view.
- the first monitor electrode 13 completely overlaps with the light transmission region 1a in plan view (in other words, the first monitor electrode 13 and the light transmission region 1a have the same shape), It is sufficient that at least a part of the first monitor electrode 13 overlaps the light transmission region 1a in plan view.
- the first monitor electrode 13 may be formed larger than the light transmission region 1a or may be formed smaller than the light transmission region 1a.
- the first monitor electrode 13 is disposed on the surface 31 a of the first mirror portion 31 and is exposed to the gap S.
- the first monitor electrode 13 is formed, for example, by doping impurities to reduce the resistance of the polysilicon layer 25c.
- the second mirror part 32 is provided with a second drive electrode 14 and a second monitor electrode 15.
- the second drive electrode 14 is disposed so as to face the first drive electrode 12 and surrounds the light transmission region 1a in plan view.
- the second drive electrode 14 has the same shape as the first drive electrode 12 in plan view.
- the second drive electrode 14 is disposed on the surface 32 a opposite to the gap S of the second mirror portion 32.
- the second drive electrode 14 is formed, for example, by doping impurities to reduce the resistance of the polysilicon layer 27c.
- the second drive electrode 14 faces the first drive electrode 12 through the polysilicon layers 27a and 27b, the silicon nitride layers 28a and 28b, and the gap S.
- the second monitor electrode 15 is disposed so as to face the first monitor electrode 13, and overlaps the light transmission region 1a in plan view.
- the second monitor electrode 15 has the same shape as the first monitor electrode 13 in plan view.
- the second monitor electrode 15 is disposed on the surface 32 b on the gap S side of the second mirror portion 32 and is exposed to the gap S.
- the second monitor electrode 15 is formed, for example, by doping impurities to reduce the resistance of the polysilicon layer 27a.
- the second monitor electrode 15 faces the first monitor electrode 13 with the gap S therebetween.
- the second monitor electrode 15 is formed on the polysilicon layer 27 different from the polysilicon layer 27 on which the second drive electrode 14 is formed.
- the second monitor electrode 15 is separated from the second drive electrode 14 in the direction in which the first mirror portion 31 and the second mirror portion 32 face each other.
- a polysilicon layer 27b and silicon nitride layers 28a and 28b are disposed between the second monitor electrode 15 and the second drive electrode 14 in the direction.
- positioning of the 1st drive electrode 12, the 1st monitor electrode 13, the 2nd drive electrode 14, and the 2nd monitor electrode 15 in planar view are not restricted to the example shown by FIG.
- Fabry-Perot interference filter 1 further includes terminals 16, 17, 18, and 19.
- Each of the terminals 16 to 19 is provided outside the light transmission region 1a in plan view.
- Each of the terminals 16 to 19 is formed of a metal film such as aluminum or an alloy thereof.
- the terminal 16 faces the terminal 17 across the light transmission region 1a, and the terminal 18 faces the terminal 19 across the light transmission region 1a.
- the direction in which the terminals 16 and 17 face each other is orthogonal to the direction in which the terminals 18 and 19 face each other (see FIG. 1).
- the terminal 16 is disposed in a through hole extending from the surface 24 a of the second stacked body 24 to the first stacked body 22.
- the terminal 16 is electrically connected to the first drive electrode 12 via the wiring 12a.
- the terminal 17 is disposed in the through hole extending from the surface 24 a of the second stacked body 24 to the intermediate layer 23.
- the terminal 17 is electrically connected to the first monitor electrode 13 via the wiring 13a.
- the terminal 18 is disposed on the surface 24 a of the second stacked body 24.
- the terminal 18 is electrically connected to the second drive electrode 14 via the wiring 14a.
- the terminal 19 is disposed in a through hole extending from the surface 24a of the second stacked body 24 to the polysilicon layer 27a.
- the terminal 19 is electrically connected to the second monitor electrode 15 via the wiring 15a.
- a trench T1 and a trench T2 are provided on the surface 22b of the first stacked body 22.
- the trench T1 extends in a ring shape so as to surround a connection portion with the terminal 17 in the wiring 13a.
- the trench T1 electrically insulates the first drive electrode 12 and the wiring 13a.
- the trench T ⁇ b> 2 extends in a ring shape along the boundary between the first drive electrode 12 and the first monitor electrode 13.
- the trench T2 electrically insulates the first drive electrode 12 and the region inside the first drive electrode 12 (that is, the first monitor electrode 13).
- the first drive electrode 12 and the first monitor electrode 13 are electrically insulated by the trenches T1 and T2.
- a region in each of the trenches T1 and T2 may be an insulating material or a gap. In FIG. 4, the trenches T1 and T2 are omitted.
- a pair of trenches T3, T4, and T5 are provided on the surface 24a of the second stacked body 24.
- the pair of trenches T3 extend in a ring shape so as to surround the terminals 16 and 17, respectively.
- Each trench T3 electrically insulates the terminals 16 and 17 from the second drive electrode 14 and the second monitor electrode 15.
- the trench T4 extends in an annular shape so as to surround the terminal 19.
- the trench T4 electrically insulates the terminal 19 from the second drive electrode 14.
- the trench T5 extends in a ring shape along the inner edge of the second drive electrode 14.
- the trench T5 electrically insulates the second drive electrode 14 from a region inside the second drive electrode 14.
- the second drive electrode 14 and the second monitor electrode 15 are electrically insulated by the trenches T3 to T5.
- the region in each of the trenches T3 to T5 may be an insulating material or a gap.
- an antireflection layer 41, a third laminated body 42, an intermediate layer 43, and a fourth laminated body 44 are laminated in this order.
- the antireflection layer 41 and the intermediate layer 43 have the same configuration as the antireflection layer 21 and the intermediate layer 23, respectively.
- the third stacked body 42 and the fourth stacked body 44 have a symmetric stacked structure with the first stacked body 22 and the second stacked body 24, respectively, with respect to the substrate 11.
- the antireflection layer 41, the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44 have a function of suppressing the warpage of the substrate 11.
- the third laminated body 42, the intermediate layer 43, and the fourth laminated body 44 are thinned along the outer edge of the outer edge portion 11c. That is, a portion along the outer edge of the outer edge portion 11c in the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44 is a portion along the outer edge of the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44. Thinner than other parts except.
- the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44 are arranged such that the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44 overlap the thinned portion 34 b in plan view. It is thinned by removing all of.
- the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44 are provided with an opening 40a so as to overlap the light transmission region 1a in plan view.
- the opening 40a has a diameter substantially the same as the size of the light transmission region 1a.
- the opening 40a opens to the light emitting side.
- the bottom surface of the opening 40 a reaches the antireflection layer 41.
- a light shielding layer 45 is formed on the light emitting surface of the fourth stacked body 44.
- the light shielding layer 45 is made of a metal film such as aluminum or an alloy thereof.
- a protective layer 46 is formed on the surface of the light shielding layer 45 and the inner surface of the opening 40a.
- the protective layer 46 covers the outer edges of the third stacked body 42, the intermediate layer 43, the fourth stacked body 44, and the light shielding layer 45, and also covers the antireflection layer 41 on the outer edge portion 11c.
- the protective layer 46 is made of, for example, aluminum oxide. Note that the optical influence of the protective layer 46 can be ignored by setting the thickness of the protective layer 46 to 1 to 100 nm (preferably about 30 nm). [Configuration of optical filter system]
- the optical filter system 50 includes the Fabry-Perot interference filter 1 described above and a controller 51 that controls the Fabry-Perot interference filter 1.
- the controller 51 includes a first current source 52, a second current source 53, a detection unit 54, and a control unit 55.
- the first current source 52 applies a drive current between the first drive electrode 12 and the second drive electrode 14 via the terminals 16 and 18, thereby generating an electrostatic force corresponding to the drive current in the first drive electrode 12.
- the second drive electrode 14 Due to the electrostatic force, the second mirror portion 32 is attracted to the first mirror portion 31 side fixed to the substrate 11, and the distance between the first mirror portion 31 and the second mirror portion 32 is adjusted.
- the distance between the first mirror part 31 and the second mirror part 32 changes due to the electrostatic force.
- the wavelength of light transmitted through the Fabry-Perot interference filter 1 depends on the distance between the first mirror part 31 and the second mirror part 32 in the light transmission region 1a. Therefore, by adjusting the drive current applied between the first drive electrode 12 and the second drive electrode 14, the wavelength of the transmitted light can be appropriately selected.
- Fabry-Perot interference for example, while changing the driving current applied to the Fabry-Perot interference filter 1 (that is, while changing the distance between the first mirror part 31 and the second mirror part 32), Fabry-Perot interference.
- a wavelength spectrum can be obtained by detecting light transmitted through the light transmission region 1a of the filter 1 with a photodetector.
- the second current source 53 supplies an alternating current having a frequency higher than the resonance frequency of the first mirror unit 31 and the second mirror unit 32 via the terminals 17 and 19 to the first monitor electrode 13 and the second monitor electrode 15. Apply between.
- the frequency of the alternating current is set higher than, for example, 10 times the resonance frequency.
- an alternating voltage is generated between the first monitor electrode 13 and the second monitor electrode 15.
- the detection unit 54 is a voltmeter, for example, and detects the AC voltage.
- the control unit 55 is configured by a computer including a processor and a memory, for example.
- the control unit 55 controls the first current source 52 based on the amount of charge stored between the first mirror unit 31 and the second mirror unit 32.
- the control unit 55 controls the first current source 52 so that the charge amount becomes a target amount.
- the target amount is set according to the target value of the distance between the first mirror unit 31 and the second mirror unit 32. Thereby, the distance between the 1st mirror part 31 and the 2nd mirror part 32 is adjusted to a desired distance.
- control unit 55 calculates the capacitance between the first mirror unit 31 and the second mirror unit 32 based on the detection result of the detection unit 54, that is, the AC voltage detected by the detection unit 54.
- the electrostatic capacity includes an alternating current applied between the first monitor electrode 13 and the second monitor electrode 15, an alternating voltage generated between the first monitor electrode 13 and the second monitor electrode 15, and an alternating current. It can be calculated based on the frequency of the current and the AC voltage.
- the control unit 55 calculates the distance between the first mirror unit 31 and the second mirror unit 32 based on the obtained capacitance. Thereby, during the operation of the Fabry-Perot interference filter 1, the actual distance between the first mirror part 31 and the second mirror part 32 can be monitored with high accuracy. [Function and effect]
- the Fabry-Perot interference filter 1 includes the first monitor electrode 13 and the second monitor electrode 15 in addition to the first drive electrode 12 and the second drive electrode 14.
- the alternating current having a frequency higher than the resonance frequency of the first mirror unit 31 and the second mirror unit 32 is applied between the first monitor electrode 13 and the second monitor electrode 15, the first monitor electrode Based on the AC voltage generated between the first monitor unit 15 and the second monitor electrode 15, the capacitance between the first mirror unit 31 and the second mirror unit 32 is calculated.
- the distance between the mirror parts 31 and 32 can be calculated based on the electrostatic capacitance, and the actual distance between the mirror parts 31 and 32 can be monitored during the operation of the Fabry-Perot interference filter 1. .
- the first monitor electrode 13 is provided in the first mirror portion 31 so as to overlap the light transmission region 1a in plan view, and is electrically insulated from the first drive electrode 12, and the second monitor electrode 15 is The second mirror portion 32 is provided so as to face the first monitor electrode 13 and is electrically insulated from the second drive electrode 14.
- the first monitor electrode 13 and the second monitor electrode 15 can be made independent of the first drive electrode 12 and the second drive electrode 14.
- the capacitance between the mirror units 31 and 32 can be calculated more suitably, and as a result, the distance between the mirror units 31 and 32 can be monitored more suitably. Therefore, according to the optical filter system 50, reliability can be improved.
- the first drive electrode 12 is exposed to the gap S. Thereby, the 1st drive electrode 12 can be brought close to the 2nd drive electrode 14, and an electrostatic force can be suitably generated between the mirror parts 31 and 32.
- FIG. 1st drive electrode 12 can be brought close to the 2nd drive electrode 14, and an electrostatic force can be suitably generated between the mirror parts 31 and 32.
- the second drive electrode 14 is disposed on the surface 32a opposite to the gap S of the second mirror part 32. Therefore, since it is not necessary to form a contact hole in the second mirror part 32 when forming the second drive electrode 14 and the wiring 14a, the process of forming the second drive electrode 14 can be facilitated.
- the first monitor electrode 13 is exposed in the gap S. Thereby, the 1st monitor electrode 13 can be brought close to the 2nd monitor electrode 15, and the distance between the mirror parts 31 and 32 can be monitored still more suitably.
- the second monitor electrode 15 may be exposed in the gap S. Thereby, the 2nd monitor electrode 15 can be brought close to the 1st monitor electrode 13, and the distance between the mirror parts 31 and 32 can be monitored still more suitably.
- the second drive electrode 14 and the second monitor electrode 15 are separated from each other in the direction in which the mirror portions 31 and 32 face each other. Thereby, the electrical insulation between the second drive electrode 14 and the second monitor electrode 15 can be improved.
- the Fabry-Perot interference filter 1 may be configured like the Fabry-Perot interference filter 1A of the first modified example shown in FIGS. 6A and 6B.
- the second drive electrode 14 is formed in the polysilicon layer 27a and exposed to the gap S. That is, the second drive electrode 14 and the second monitor electrode 15 are formed on the same polysilicon layer 27. Therefore, the wiring 15a extends from the terminal 19 along the surface 32a of the second mirror part 32 and the direction in which the mirror parts 31 and 32 face each other, and the edge of the second monitor electrode 15 And a portion connected to.
- the reliability can be improved as in the above embodiment. Further, since the second drive electrode 14 is exposed in the gap S, the second drive electrode 14 can be brought close to the first drive electrode 12, and an electrostatic force is generated more suitably between the mirror portions 31 and 32. be able to.
- the Fabry-Perot interference filter 1 may be configured like the Fabry-Perot interference filter 1B of the second modified example shown in FIGS. 7 (a) and 7 (b).
- the second drive electrode 14 is formed in the polysilicon layer 27a and exposed to the gap S.
- the second monitor electrode 15 is formed on the polysilicon layer 27 c and is disposed on the surface 32 a of the second mirror portion 32.
- the reliability can be improved as in the above embodiment. Further, since the second drive electrode 14 is exposed in the gap S, the second drive electrode 14 can be brought close to the first drive electrode 12, and an electrostatic force is generated more suitably between the mirror portions 31 and 32. be able to.
- the second monitor electrode 15 is disposed on the surface 32a of the second mirror portion 32, so that it is necessary to form a contact hole in the second mirror portion 32 when forming the second monitor electrode 15 and the wiring 15a. Therefore, the process of forming the second monitor electrode 15 can be facilitated.
- the Fabry-Perot interference filter 1 may be configured like the Fabry-Perot interference filter 1C of the third modification shown in FIGS. 8 (a) and 8 (b).
- the second drive electrode 14 is formed in the polysilicon layer 27a and exposed to the gap S. That is, the second drive electrode 14 and the second monitor electrode 15 are formed on the same polysilicon layer 27. Therefore, the wiring 15a extends along the direction in which the mirror portions 31 and 32 face each other and the portion extending from the terminal 19 along the polysilicon layer 27b, and is connected to the edge of the second monitor electrode 15. And a portion.
- the reliability can be improved as in the above embodiment. Further, since the second drive electrode 14 is exposed in the gap S, the second drive electrode 14 can be brought close to the first drive electrode 12, and an electrostatic force is generated more suitably between the mirror portions 31 and 32. be able to.
- the Fabry-Perot interference filter 1 may be configured like the Fabry-Perot interference filter 1D of the fourth modified example shown in FIGS. 9A and 9B.
- the second drive electrode 14 is formed in the polysilicon layer 27a and exposed to the gap S.
- the second monitor electrode 15 is formed on the polysilicon layer 27b, and is disposed in the middle of the second mirror portion 32 in the direction in which the mirror portions 31 and 32 face each other.
- the reliability can be improved as in the above embodiment. Further, since the second drive electrode 14 is exposed in the gap S, the second drive electrode 14 can be brought close to the first drive electrode 12, and an electrostatic force is generated more suitably between the mirror portions 31 and 32. be able to.
- the Fabry-Perot interference filter 1 may be configured like the Fabry-Perot interference filter 1E of the fifth modified example shown in FIGS. 10 (a) and 10 (b).
- the second drive electrode 14 is formed in the polysilicon layer 27b, and the mirror portions 31 and 32 are disposed in the middle of the second mirror portion 32 in the direction facing each other.
- the reliability can be improved as in the above embodiment.
- the material and shape of each component are not limited to the material and shape described above, and various materials and shapes can be employed.
- the arrangement of the terminals 16, 17, 18, 19 is not limited to the example described above, and may be any arrangement.
- the second disclosure is for a MEMS / MOEMS (microelectromechanical system / microoptical electromechanical system) or other micromachined actuator device consisting of a capacitive structure, implemented with two electrodes facing each other. It is related with the method peculiar to the operation control. At least one of the electrodes has a spring attached and is movable. Typically, such structures are electrostatically controlled by applying a control voltage to the capacitor plate to cause mechanical displacement.
- a MEMS-based Fabry-Perot interferometer where the spacing between the electrodes is very small, for example less than a few ⁇ m, and the spacing between the electrodes is very high accuracy. For example, it needs to be known with an accuracy better than 10 nm. This is because the transmission spectrum and reflection spectrum of the device are calculated based on the distance between the electrodes. These devices therefore require appropriate electromechanical calibration.
- the proposed new electronic circuit and method for controlling an electrostatic actuator is based on supplying an accurate amount of charge Q instead of applying a control voltage V. In this way, the two electrodes are so close that it is difficult and even impossible to separate them again, which can impair the device or its inherent calibration. in) "phenomenon is avoided.
- charge-based control greatly extends the accessible tuning range of the device. Furthermore, this control makes it possible to implement two independent measurement methods for the resulting interval d.
- the first method is quasi-static capacitance measurement using charge control, which is made possible by the charge-based control described above.
- the second method is a special implementation of high frequency capacitance measurement and is also based on charge control.
- At least one of the two methods eliminates many calibration or recalibration steps, and complete control of the resulting electrode spacing is obtained even under changing temperature conditions or under the influence of mechanical drift or hysteresis.
- the novel actuator control system can be used to characterize an electrostatic actuator using electrical parameters without the risk of damaging the actuator due to a “retraction” phenomenon.
- the method according to the second disclosure can be used for any type of electrostatic actuator characterized by feature 1 described below without having to modify the actuator device itself.
- a preferred embodiment of the electrostatic actuator controller according to the second disclosure consists of an ASIC (Application Specific Integrated Circuit) that mounts all the necessary components of the electronic circuit on a single chip.
- ASIC Application Specific Integrated Circuit
- operation by charge control will form an integral part of the device design rules, and a new micromachined MEMS / MOEMS actuator with electrostatic control will be developed, This actuator provides a significantly expanded and even new functionality by using a new controller based on charge and a distance measurement system using this controller.
- MOEMS structures In the field of MEMS and MOEMS structures, there are resonant devices and non-resonant devices. Such structures typically have one or more degrees of freedom with respect to mechanical motion, and there are many different types of actuator methods such as electromagnetic, piezoelectric, electrostatic. In all of these methods, forces on the movable structure are generated to induce dynamic or resonant vibrations or static deflection of such structures.
- actuator methods such as electromagnetic, piezoelectric, electrostatic. In all of these methods, forces on the movable structure are generated to induce dynamic or resonant vibrations or static deflection of such structures.
- MOEMS structures often convert information on mechanical degrees of freedom, such as spacing or angle, into optical functionality, for example, variations in cavity length of optical resonators to deflection angles, or as another example linear Converts motion to interferometer arm phase mutation.
- actuation is achieved by controlling the voltage between the movable electrode and the fixed electrode (eg, actuator comb), and an accurate grasp of the actual dynamic mirror position can be achieved on the same device.
- This can be ensured by an embedded silicon piezoelectric spacing encoder. Separation of motion control and measurement of freedom state by measurement makes it possible to create a device that only requires "one point, once" calibration for each sample, which has no drift and hysteresis, Also, the temperature effect is fully compensated.
- the second disclosure relates to a particular type of MEMS / MOEMS structure, which is best described by the following features.
- the structure consists of two electrodes that are in close proximity to form a capacitor, with at least one electrode having a spring attached, which can move toward the opposite electrode .
- the spacing d between the electrodes changes when a force F is applied.
- F Hook's law
- F D ⁇ ⁇ x.
- the two electrodes form a capacitor plate, and these plates are wired for electrical access to the capacitor from the outside.
- Capacitors are filled with air, protective gas, or placed in a vacuum.
- FPI Fabry-Perot etalon or Fabry-Perot interferometer
- the transmission wavelength ⁇ of the device is selected to a high degree of ambiguity according to the selected interval d.
- Low orders are preferred because they allow a larger adjustment range without high order ambiguity, the so-called free spectral range FSR.
- Such devices are controlled by applying a voltage to the capacitor electrode.
- the control voltage results in an electric field that creates an attractive force between the plates, so that the spacing between the plates can be changed statically by changing the applied voltage.
- MEMS / MOEMS structures such as the FPI devices discussed above have some significant drawbacks.
- Each device requires its own individual wavelength calibration, which is expensive.
- Each device is wavelength calibrated and the maximum transmission wavelength is measured for many different control voltage levels. This measurement is usually carried out at one temperature T 0.
- the stability of the calibration needs to be investigated to obtain a long-term stable solution. Depending on the application, recalibration may occasionally be necessary.
- the spring constant varies with temperature. If the device is made of silicon, the elasticity of the silicon microstructure is associated with a Young's modulus, which is known to have temperature dependence. There are two options for using this device at different temperatures: • Calibrate each device at a different temperature. This procedure is extremely labor intensive and expensive, which can be significant in high volume applications.
- the “pull-in” voltage can be slightly different in the manufacturing series.
- each individual device requires its own maximum value for the allowable control voltage at the reference temperature T 0 , as well as rules for converting these maximum values to other temperatures. That is, in addition to wavelength calibration (coefficient of wavelength polynomial), there are additional parameters that need to be processed for each individual FPI device.
- the individual “pull-in” points are not known in advance. Some percentage of devices are simply defective due to the “pull-in” phenomenon, which reduces the manufacturing yield.
- the acceptable safe control voltage operating range is a good / bad selection parameter for each device. Thus, the pull-in phenomenon also reduces the manufacturing yield due to the manufacturing selection process.
- micromachined MEMS / MOEMS spring plate capacitor devices have great application potential, such as when used as Fabry-Perot interferometers (FPI), but present significant defects in manufacturing and application. This situation can be overcome by the electronic circuit and electrostatic actuator control method of the second disclosure.
- FPI Fabry-Perot interferometer
- the second disclosure presented herein consists of different types of electrical controllers for micromachined MEMS / MOEMS systems having a capacitive structure and at least one springable movable electrode.
- the “pull-in” phenomenon can be completely avoided, the usable adjustment range can be greatly expanded, and two types of measuring and calculating the distance d by different types of electric control devices.
- a new method becomes available, which solves many of the calibration and temperature related problems. In the best case, the device is fully self-calibrated with a single point calibration.
- the electrostatic actuator controller system according to the second disclosure can greatly extend the product design of such devices, in particular by the absence of any “pull-in” phenomenon and by a considerably extended adjustment range. In this way.
- the electrical control of the MEMS / MOEMS system under consideration which has a capacitive structure and at least one spring-loaded movable electrode, applies a control voltage to the capacitor electrode, thereby charging both electrodes with opposite charge polarity. This is realized by generating an attractive force between the electrodes. As shown in the detailed description, this procedure results in an unexpected ambiguity of the system state with respect to interval d, potentially leading to a “pull-in” phenomenon.
- the second disclosed step consists of the following three essential elements. New methods for electrically controlling electrostatic actuators and resulting new controller electronics. Two new independent distance measurement methods, one based on quasi-static and the other based on high-frequency measurements. Extending the controller for different modes of operation, eg introducing resets, and utilizing feedback for stable resonant excitation
- the steps of the second disclosure are as follows. (1) Realizing electrical control of the actuator system by controlling charge, not voltage (including DC current and time control). Possible embodiments are described in another section below.
- charge control is done using DC current
- one key point of the second disclosure is that the electrical control connection can be switched to accurately control the charge source or current source from the MEMS / MOEMS capacitance. It is possible to connect or disconnect in a short time. This makes it possible to add a precisely defined charge amount to the MEMS / MOEMS capacitor in a properly defined manner, and to simply disconnect the electrical control connection by means of a switch. By doing so, it can be kept constant ("freezing", up to the leakage current).
- these current source units are preferably selectable by electrical switching.
- the spacing d can be calculated with a simple formula.
- the relationship between electrode spacing and capacitance value can be established by an overall calibration performed by a series of devices of the same type. In this case, the calibration is valid for this type of capacitor design. In this way, the actual spacing between the electrodes can be calculated from the measured capacitance values for fewer simple capacitor structures.
- the distance d between the electrodes can be determined by knowing the specified charge Q and the resulting voltage V.
- This additional measurement method (3) is necessary because there is an operating point where an accurate interval cannot be obtained by static capacitance measurement.
- FIG. 11 schematically shows a micromachined MEMS / MOEMS parallel plate capacitor and electrical wiring 106.
- the capacitor electrode has an effective capacitor area A.
- the electric wiring 106 and the circuit are provided so that the capacitor plates 103 and 105 are charged with the opposite polarity regardless of the polarity of the voltage. If anything there is an external force (assuming gravity is negligible), the spacing between the plates 103 and 105 are equilibrated with intervals d M.
- the subscript M represents “mechanical”.
- D is a spring constant.
- Equation 6 has an exponent of d of 3rd order, and can be solved using Cardano's formula.
- the relationship between d (V) and V is strongly nonlinear. This non-linearity is the reason why a calibration formula is usually provided that fits the spacing d as a function of V, using very high order polynomials such as 7 or higher.
- Equation 7 states that distance d is linear with respect to Q 2. As the charge Q increases, the spacing d decreases monotonically according to the simple equation 7. Equation 7 also shows that this interval can be reduced to exactly zero with an appropriate amount of charge. This linear and linear behavior of the system as a function of Q 2 and the wide operating range seems to be inconsistent with the “pull-in” phenomenon observed when scanning intervals with varying control voltages. appear. The next section explains the reason for this paradox.
- one part of the second disclosed step is to change from a control voltage to charge control of an operating system consisting of a movable MEMS / MOEMS capacitor configuration.
- the change in system behavior and its consequences can be described by some additional simple equations as follows.
- V (d) includes two contributions as d. That is, one term decreases with the square root of d and the second term increases linearly with d. This is an unexpected fact that the resulting voltage V (d) generated by the charge Q (d), expressed as a function of the thickness d, has a maximum value for d as shown in FIG. Leads to results.
- Equation 6 is cubic with respect to d and can be zero for three solutions.
- the resulting dependent d (V) is not a function but a relationship.
- the voltage as a function of the distance d has a maximum value at which the gradient ⁇ (d) / ⁇ V diverges infinitely. If two solutions of Equation 6 with the same value of V (meaning two possible values of d) approach each other, the system becomes unstable and the system can oscillate arbitrarily between both states.
- the “pull-in” phenomenon is a pure “electrical” phenomenon caused by the capacitance dependence on 1 / d (Equation 4) when decreasing the spacing d.
- V (Q) branches 201) are greatly limited. Therefore, the adjustment range is limited to 33% with just the available displacement range d M as a whole when using the voltage controlled.
- the charge-based electrostatic actuator control device and method according to the second disclosure overcomes this limitation.
- an electrostatic actuator system with a capacitive structure and at least one movable spring electrode, in which the voltage V (Q) generated by the charge Q has a maximum value for the charge quantity Q.
- the actuator system it is preferable to control the actuator system not by the control voltage but by the amount of charge Q. The reason is that such a system in which the maximum value V max of the generated voltage V is relative to the charge quantity Q does not have a stable solution for the voltage V> V max , and the “pull” phenomenon occurs when the control voltage V is V This is because it occurs as soon as max is exceeded.
- the main point 1 of the second disclosed step is from the control by voltage, which cannot unambiguously deal with the entire range of the distance d, to the control region by the parameter “amount of charge Q”. Is to change.
- the control parameter Q With charge control, the control parameter Q becomes monotonic with respect to d as shown in FIG.
- the realizable displacement range is limited only by the mechanical limits of the elastic range of the spring 102, not by the method of electrical control when using voltage control, which is prior art.
- FIG. 21 A simple circuit is shown in FIG. 21 to illustrate the principle and basic feasibility of this approach and to illustrate possible extensions.
- the concept is that an additional capacitor B111 having a capacitance C B that is smaller or much smaller than the MEMS / MOEMS capacitor A110 is replaced by the maximum voltage V max 203 shown in FIG. Charging with a load voltage level V B 114 exceeding. During that time (before switching S1 in FIG. 21), the voltage 115 at the capacitor A is measured. When the charging of the capacitor B having the known capacity C B is completed, the electrical connection to the voltage source is disconnected and the capacitors A and B are connected.
- Charge transfer from capacitor B to capacitor A is performed until the voltages on both capacitors are equal.
- the amount of charge transferred can be calculated from the load voltage V B , the capacitance C B , and the voltage V of the capacitor A before connection.
- the amount of charge is the time integral of the current during the integration time.
- a high speed switch connected in series with the charge supply circuit allows the charging source to be connected or disconnected from the MEMS / MOEMS capacitor at any precisely defined time. Therefore, any desired charge amount can be accurately added to the MEMS / MOEMS capacitor. In this way, the capacitor can be charged with any desired amount of charge, which defines the operating point of the capacitance interval d of the electrostatic actuator.
- the spectrum measurement can be performed at an operating point of a specified interval d.
- the peak transmission wavelength is equal to the spacing between the plates of the MEMS / MOEMS capacitor.
- the calibration of the MEMS / MOEMS actuator system parameter “spacing” does not refer to a SET point value that may have temperature dependence or hysteresis, but instantaneous capacitance that reflects the effects of temperature changes or mechanical hysteresis. Refer to the measured value of.
- the second interval measurement method is invented exclusively for use with the following micromachined MEMS / MOEMS electrostatic actuator.
- a well-known method of measuring capacitance is to use high frequency (HF) capacitance measurement.
- HF capacitance measurement In a typical HF capacitance measurement, a small oscillating voltage signal with high frequency is applied and the resulting AC current is measured.
- AC voltage modulation When transitioning to state-of-the-art MEMS / MOEMS actuator control systems, AC voltage modulation must be added to the DC control voltage.
- V (d) When transitioning to state-of-the-art MEMS / MOEMS actuator control systems, AC voltage modulation must be added to the DC control voltage.
- V (d) multivalent relationship discussed in detail above.
- the HF capacitance measurement is performed according to the following procedure in accordance with the charge control method.
- the charge amount Q (d) is set so that the electrostatic actuator is displaced to a desired interval d.
- this method can be referred to as “current injection HF capacitance measurement”.
- the MEMS / MOEMS electrostatic actuator has a mechanical resonant frequency. Resonant oscillation can occur around any operating point d (Q) defined by the charge quantity Q.
- Measuring one interval d at one known charge amount and one temperature is sufficient mainly for precise grasping of the effective capacitor area A. All other dependent elements can be measured during operation by calculating the interval according to the proposed method, i.e. by making the voltage available as a metric rather than using the voltage as a control parameter. it can. The temperature fluctuation that changes the actual interval d becomes significant when the actual interval d is measured again. Long-term drift or hysteresis effects are eliminated by performing a new measurement of the actual spacing d, for example during the scanning control of the device.
- the spring loaded micromachined MEMS / MOEMS actuator system has a mechanical resonance frequency. Resonant oscillation can occur at any quasi-static operating point, which is characterized by an average interval d defined by a (static) charge quantity Q (d). In some applications, the device operates at or near mechanical resonance. In order to excite the resonant mode, the system is typically driven by voltage modulation with adjustable amplitude and frequency. As discussed in the section “Current Injection HF Capacitance Measurement”, this modulation needs to be applied to the DC control voltage (again, an undesired region due to its disadvantages discussed above). In order to extend the operation of the controller of the second disclosure also in the case of driving resonance vibration, it is necessary to proceed as follows.
- the charge amount Q (d) is set in order to adjust the actuator capacitance to a desired distance d.
- the actual spacing d is determined by measuring the resulting voltage (ie static capacitance measurement) and / or by charge injection HF capacitance measurement.
- the interval d is also a function of time and oscillates periodically (after a certain transition time) with the frequency of the AC current but with a characteristic amplitude and phase lag.
- a minor disadvantage of this detection method is that it can be less sensitive near the operating point Q where the DC voltage reaches the maximum V max where the gradient ⁇ V / ⁇ d is zero.
- the above-described vibration motion controller and its associated measurement system (based on the second disclosure of a novel actuator control system for controlling the amount of charge) has several basic advantages compared to state-of-the-art voltage control: There is.
- the proposed method can handle and use all the intervals d, has no instability, and has no danger of “pulling” phenomenon.
- the driving force of the system is linear with respect to Q 2 (Equation 3). This suggests the following: That is, the driving force caused by sinusoidal fluctuations in charge Q is independent of the actual spacing d and independent of the actual movement of the system affected by this force. If voltage control is used instead, applying a sinusoidal control modulation voltage means that the force F is related to V 2 / d 2 (Equation 5).
- the excitation force itself depends on the actual distance d during vibration, which is then subject to reproducible influences by that force. This cyclic dependency can have unpredictable and undesirable effects.
- the method according to the second disclosure provides a detection system for vibration frequency, amplitude and phase lag, which directly detects the mechanical movement of the parameter d.
- the effective capacitor area A can be calculated by a simple single point calibration, for example by measuring the distance d for a known amount of charge for each individual electrostatic actuator.
- the main purpose of the second disclosure is to set the set point (operating point) of an electrostatic actuator having at least one movable capacitive electrode and one spring-loaded capacitive electrode by a control voltage as in the state of the art. Rather, it is controlled by the amount of charge placed on the electrode.
- different charge supply circuits can be used that can be connected or disconnected from the capacitance 210 of FIG. 22 by respective switches.
- the high-speed and high-precision timing control of the connection of the preferred charge supply circuit and its characteristics make it possible to add an accurately known charge amount to the capacitor.
- the electrostatic actuator capacitance 210 is electrically connected in parallel to the current source 211, the voltmeter 213, and the reset switch 215.
- Current source 211 can be switched on or off using switch 212.
- Voltmeter 213 can be switched on or off using switch 214.
- the current source 211 generates a constant current I.
- a voltage V (Q) is measured between the electrodes of the actuator capacitance 210.
- Curve V (Q) has a maximum value, which results in a divergent effective capacitance at this point.
- FIG. 1 For a case where one of the electrodes of the electrostatic actuator is connected to the ground or the case of the actuator, a preferred embodiment of a suitable precision current source is shown in FIG.
- This circuit using operational amplifier 221 is known as a Howland current pump.
- FIG. 1 For a case where both electrodes of the electrostatic actuator capacitance are floating, a preferred embodiment of a suitable precision current source is shown in FIG.
- This circuit using operational amplifier 226 is known as a transconductance amplifier.
- the current I charges the electrostatic actuator capacitance 225.
- a current source 211 according to the switched capacitor principle is preferred.
- Such a circuit is described, for example, in W.W. A. Clark, US Pat. No. 5,969,513, “Switched Capacitor Current Source for Use in Switching Regulators”.
- the switched capacitor current source is, for example, B.I. R. Gregoire and UK. Moon of IEE Trans Circ Sys II:.. . Express Briefs, Vol.54, as described in No.3 March 2007 ( "A Sub 1 -v Constant G m -C Switched-Capacitor Current Source"), It can be implemented very efficiently as an integrated circuit using standard semiconductor technology.
- switched capacitor current sources are unipolar, that is, they can only supply a unidirectional current flow. In such a case, to create the bipolar current source required in the second disclosure, two switched capacitor current sources supplying current flow in opposite directions need to be connected in parallel.
- FIG. 1 A preferred embodiment of a complete electrostatic actuator control system according to the second disclosure is shown in FIG.
- This control system consists of a digital controller system 231 that controls all elements of the electrostatic actuator controller shown in FIG.
- the digital controller system 231 executes all the steps of a series of commands for controlling the mechanical displacement of the electrostatic actuator 230.
- switches 234, 238 and 239 are opened.
- the reset switch 239 is closed. This completely discharges the electrostatic actuator capacitance 230 and returns the actuator to its mechanical zero force position.
- the reset switch 239 is opened and the voltmeter switch 238 is closed. This enables measurement of the residual voltage (“reset voltage”) between the electrodes of the electrostatic actuator 230. The measurement is performed by a voltmeter 235 and the analog output 236 of the voltmeter is converted to a digital value by an analog-to-digital converter 237. The obtained digital value of the reset voltage is stored in the memory of the controller 231.
- the system is ready for a repetitive step sequence for controlling the displacement of the electrostatic actuator 230.
- Each repetitive step sequence starts with closing the current source switch 234.
- the value of I or the size of the charge packet ⁇ Q is determined (obtained) by the digital controller 231 via the control signal 233. All supplied charge packets ⁇ Q add up to the total charge Q deposited on the electrode of the actuator 230.
- the voltmeter 235 continuously measures the voltage V (Q) between the electrodes of the actuator 230.
- C eff (Q) is a one-to-one measure of the charge Q and thus the displacement of the electrostatic actuator 230.
- the sign of C eff (Q) specifies the state of the electrostatic actuator 230. If C eff (Q) is positive, the actuator is near its zero force position and when the reset switch 239 is closed, the actuator returns to its zero force position.
- C eff (Q) needs to be calculated after the complete cycle of the actuator displacement step is complete. If C eff (Q) is positive, it is safe to open switches 234 and 238 and close reset switch 239. In this way, the actuator 230 moves safely to its zero force position. However, if C eff (Q) is negative, the polarity of the current source 232 is changed by the control signal 233 so that the total charge Q on the actuator 230 can be reduced below the pull-in point by the reversed current flow. There must be. It is safe to open switches 234 and 238 and close reset switch 239 after the total charge has decreased sufficiently below the singularity and sign change of C eff (Q). In this way, the actuator 230 moves safely to its zero force position.
- a switch 212 is given to the current source 211, and a switch 214 is given to the voltmeter 213. If the electronic circuit on which the current source 211 and the voltmeter 213 are mounted has sufficient characteristics, it may not be necessary to provide the switches 212 and 214 to the electronic circuit.
- the capacitance of the voltmeter 213 is less than that of the actuator 210.
- the switch 214 is redundant.
- the switch 212 is redundant. It is. Alternatively, the switch 212 is still redundant if the current of the current source 211 can be changed at high speed and until the current is zero.
- the capacitive actuator control system according to the second disclosure shown in FIG. 22 can be simplified to the system shown in FIG. The only switch that is still needed is the reset switch 215.
- FIG. 29 shows an electrostatic actuator control system according to the second disclosure that can measure the actuator capacitance 210 using the charge injection HF measurement method described above.
- a small signal AC current injection source 216 is connected in parallel to the current source 211, the voltmeter 213 and the reset switch 215. If necessary, the AC current injection source 216 can be disconnected from other elements of the system using a switch 217. As described above, the AC current injection source 216 charges and discharges the actuator capacitance 210 at high speed, but the voltage of the capacitance 210 is observed by the voltmeter 213, and the voltmeter is the AC source 216. It must be capable of sufficient time resolution to follow the vibration of the.
- the capacitance 210 can be calculated if the AC current I (t), the voltage V (t), and the vibration angular frequency ⁇ are known. Also, by knowing I (t) and V (t), the phase angle between I (t) and V (t) is determined to obtain additional information about the state of the electrostatic actuator 210. Is also possible.
- the voltmeter 213 can be implemented as two separate parallel circuits. That is, one is a slow but highly accurate full-scale voltmeter for measuring the absolute voltage of the actuator capacitance 210, and one is a small signal AC current injection on the actuator capacitance 210. A fast but small signal voltmeter to measure the effects of the source.
- the terms “fast” and “slow” relate to the modulation frequency of the AC current injection source 216. “Slow” means that the measurement frequency is below the excitation frequency of the AC source 216 and “Fast” means that the measurement frequency is above the AC excitation frequency.
- Micromachined MEMS / MOEMS comprising a capacitive structure and at least one spring-loaded movable electrode, whereby the mechanical spacing d between the electrodes can be changed by a force applied to the capacitor by electrical means
- An electrical actuator controller for an electrostatic actuator system A capacitor system with at least one movable electrode, characterized in that the voltage V generated in the capacitor by the charge Q exhibits at least one maximum value as a function of the charge quantity Q;
- the electric actuator controller is The system is directly driven by the charge amount Q as a direct control of a source of mechanical force attracted between the capacitance electrodes,
- the electric actuator controller is (1) one or more charge supply circuits, such as an external load capacitor that can be switched repeatedly in principle, that accurately supply a known amount of charge, or preferably not solely by a charge supply circuit, And (2) an electronic switch that allows the charge supply circuit to be connected or disconnected from the capacitor of the actuator, respectively, at very high speed, at any time, and optionally repeatedly.
- An electric actuator controller realized by an electronic switch, which can be kept constant for a long time for the purpose of performing measurements carried out on the basis of a movable electrode capacitor system.
- a measurement system for instantaneous capacitance of the capacitive structure includes: The controller system controls the amount of charge applied to the capacitance of the actuator and that this amount of charge is known or can be determined by the characteristics of the charge supply circuit and the timing of the switch; And
- the electric actuator controller includes a circuit for measuring the voltage generated across the capacitor so that by knowing the charge quantity Q and the resulting voltage V, the instantaneous actuator between the electrodes of the electrostatic actuator system.
- a measuring system characterized in that the capacity of the capacitive structure formed by the distance d can be determined.
- the measurement system for the instantaneous capacitance of the feature includes: First, the controller adds a certain amount of charge to the capacitance, and as a result, the distance between the electrode plates is adjusted to be close to a desired distance, and then the charge supply circuit is moved to a movable pole.
- the electric actuator controller includes a circuit for measuring the AC voltage modulation arising from the capacitor, thereby knowing the charge modulation ⁇ Q and the resulting modulated voltage to be measured ⁇ V between the electrodes of the electrostatic actuator system. A high frequency capacitance of the capacitive structure formed by the instantaneous interval d is determined.
- the micromachined MEMS / comprising the capacitive structure according to Feature 1 and at least one movable electrode with a spring when using the electric actuator controller that directly controls the charge quantity Q according to Feature 4
- a system for exciting a forced vibration and measuring a vibration state for a MOEMS electrostatic actuator system comprises: First, the controller applies a certain amount of charge to the capacitor, so that the spacing between the electrodes of the capacitor is adjusted to be close to the desired spacing, and then the charge supply circuit is disconnected from the capacitor.
- an AC current having an adjustable amplitude and a frequency lower than, equal to or higher than the resonant frequency of the vibration actuator capacitor is connected to the capacitor,
- the AC current drives the forced mechanical vibration of the vibration actuator capacitor;
- the electrical actuator controller includes a circuit capable of detecting the modulation voltage amplitude and its phase lag relative to the phase of the applied AC current for measuring the AC voltage modulation resulting from the capacitor, thereby at least after the transient oscillation phase
- the system capable of completely determining the vibration state of the forced vibration of the electrostatic actuator.
- Electrostatic actuator control to take advantage of the entire mechanical displacement range of the electrostatic actuator consisting of three electrical components connected in parallel: a switchable bipolar current source, a switchable high impedance voltmeter, and a reset switch system. The reset switch is used to discharge the electrostatic actuator and move the actuator to its mechanical zero position.
- a bipolar current source is used to continuously deposit known charge packets on the electrodes of the electrostatic actuator, resulting in a mechanical displacement that is a monotonic function of the total deposited charge Q.
- the voltmeter is used to determine the actual voltage V (Q) between the electrodes of the electrostatic actuator.
- V (Q) the actual voltage between the electrodes of the electrostatic actuator.
- the bipolar actuator is actively used to discharge the electrostatic actuator. This operation sequence is executed under the control of the digital controller system.
- a third disclosure describes an electrostatic actuator controller used to control a micromachined MEMS / MOEMS system with a capacitive structure and at least one movable electrode with springs by charge amount rather than voltage.
- a method specific to operation and calibration will be described with particular attention to the fact that such capacitive structures can exhibit significant or at least non-negligible leakage currents.
- the related art is the second disclosure, which includes the use of an electrostatic actuator controller for capacitive structures with non-negligible leakage currents. [background]
- MEMS and MOEMS structures with moving parts need to work.
- Various modes of operation are known.
- One possible option is electrostatic actuation of a suitable actuator structure.
- One example is a Fabry-Perot interferometer based on MEMS that utilizes such an actuator structure to enable spectral analysis in the near infrared spectral range.
- the capacitance of a parallel plate capacitor is given by the following equation.
- C ⁇ o A / d (Formula 13) here, ⁇ o : dielectric constant A: effective area of capacitor d: spacing between electrodes
- a second disclosure relates to such a micromachined MEMS / MOEMS system comprising such a capacitive structure with at least one spring-loaded movable electrode, where the voltage V is a function of the amount of charge Q placed on the electrode.
- the maximum voltage value can be explained as follows (compare FIG. 30). • At zero charge, the capacitor voltage is also zero. -If the charge amount of the electrode increases, an attractive force is generated between the electrodes. As a result, the distance d between the electrodes is reduced, and the capacity of the capacitive structure is increased. At the beginning, when d is large, the capacity gradually changes with d. Therefore, the voltage of the capacitor is also increasing.
- V control slightly larger than V max leads to a fast runaway phenomenon, a so-called “retraction” phenomenon. This phenomenon ends when the two electrodes collide with each other, which usually damages the actuator device.
- the second disclosure teaches: -If voltage control is replaced with a control area based on the amount of charge, a safe and “no pull-in” operation becomes possible. • With charge control, there is a maximum value in V (Q) and an adjustable range of spacing between electrodes that is not accessible by voltage control due to the resulting "pull-in” phenomenon is accessible. - one or combine a plurality of current sources and switches, can be added to the electrode of the capacitive structure of any optional charge amount Q c actuator. In addition, measuring the voltage V (Q) generated in a capacitor with a precisely controlled charge quantity Q is a quasi-static method for calculating the actual capacitance of the actuator capacitive system It is.
- the actual distance d between the electrodes can be calculated from such an actual capacitance value if the relationship between the capacitance and the distance between the electrodes is known, for example, by calibration measurements.
- Injecting an AC current having a frequency above the resonant frequency of a vibrating MEMS / MOEMS system with a capacitive structure and at least one movable electrode with springs, and measuring the AC amplitude of the capacitor voltage is HF capacitance measurement, which is compatible with electrostatic actuator controller charge / current control.
- the third disclosure presented below overcomes the applicability limitations of the second disclosure due to the presence of non-negligible leakage currents in the capacitive structure of the actuator.
- the third disclosed step consists of five essential elements. All concepts of the second disclosure are applicable if the capacitor voltage, leakage current source, and isolation resistor R leak at any given time are known with sufficient accuracy.
- the first step of the third disclosure can accurately calculate the isolation resistance R leak using at least one additional switchable reference resistor and a dedicated measurement method using this additional reference resistor. Is to introduce a configuration to do so. This calibration measurement can be repeated at any time under any actual operating conditions. In this method, if there is a dependency of the separation resistance R leak on the voltage V of the capacitor or the control charge Q c, it becomes possible to measure the dependency.
- a specified charge amount is first added to the capacitor.
- all current sources are disconnected from the capacitors. The presence of a non-negligible leakage current changes the selected set point by reducing the capacitor charge Q over time.
- the second step of the third disclosure is to introduce a control current feedback loop that allows the operating point defined by the control charge quantity Q c to be maintained. Due to the maximum value in the relationship V (Q), its derivative dV / dQ changes sign, so the voltage generated by the capacitor charge Q c is not suitable as a sensed value for the control closed loop. Instead, the control closed loop is made to operate using capacitance as the sensed value. Capacitance values are measured using a “current injection” HF capacitance measurement system.
- the third step of the third disclosure uses the configuration of the second step of the third disclosure as an additional method of measuring the separation resistance R leak at different operating points defined by the control charge amount Q c of the capacitor. Is to use.
- the fourth step of the third disclosure includes an additional switch that allows recalibration of all current sources in the system using one or more of the precision resistors of the electrostatic actuator controller and the internal voltage measurement system. Is to introduce. The introduction of an additional switch is essential because the current to be controlled can be very small.
- the fifth step of the third disclosure is extremely simplified without using active feedback control, but only a partial operating range of the electrostatic actuator controller without the risk of any runaway phenomenon such as retraction. It is to introduce an operating method that works.
- the second disclosure states that charge control in micromachined MEMS / MOEMS systems with capacitive structures and at least one spring-loaded movable electrode has several advantages compared to voltage control. Teaching.
- the second disclosure proposes the circuit shown in FIG.
- the current source 311 supplies the current I to the actuator capacitive structure 310 via the switch 312.
- the voltage measuring circuit 313 By connecting the voltage measuring circuit 313 to the capacitor 310 via the switch 314, the voltage V generated by the charge amount Q of the capacitor 310 can be measured.
- a reset switch 315 can reset the capacitor voltage to zero.
- a target controlled charge amount Q c is added to the capacitor by a combination of a precision current source 311 that supplies a known current I and the exact timing of connection / disconnection switching 312.
- FIG. 32 shows the electrostatic actuator control system of FIG. 31 when taking into account the actual equivalent circuit of the capacitor.
- a separation resistor R leak 320, an equivalent series resistance R ESR 321 and an equivalent series inductance L 322 are shown.
- the electrostatic actuator controller controls the actuator by adding a specified charge amount to the capacitor 310. However, the current supplied by current source 311 is shunted at node 323. The leakage current I leak depends on the voltage of the capacitor C and the separation resistance R leak .
- the charge Q c (t) of the capacitor at an arbitrary time t 1 is given by the following equation (Equation 14).
- I is the current of current source 311 as a function of time while switch 312 is closed;
- V (Q c (t)) is the measured “resulting voltage” of the capacitor with charge Q c measured over time when switch 314 is closed, measured using voltmeter 313, t o is the start time, t 1 is the actual time at which the actual charge quantity Q c (t) is to be considered or controlled.
- the control current supplied by the current source 311 is known, it may occur voltage V (Q c (t)) is measured by the voltage measurement system 313, Equation 14, the charge amount of the capacitor Knowing R leak Q c It shows that (t) can be accurately controlled at an arbitrary time t. Therefore, the method of the electrostatic actuator controller described in the second disclosure can be used in the presence of a non-negligible leakage current if the separation resistance R leak is known with sufficient accuracy.
- the separation resistor R leak of the capacitor C having a fixed capacitance adds a charge Q to the capacitor, then disconnects any current source or control voltage, and then the capacitor while it is discharged by leakage current. Is calculated by measuring the voltage generated at 1 as a function of time.
- This method is not useful for the actuators described above because the capacitor does not have a fixed capacitance because of the at least one springable movable electrode. As shown in the example of FIG. 30, the spacing between the electrodes is increased by reducing the amount of charge Q c. Accordingly, the capacity decreases.
- the voltage V (Q) does not decay exponentially as in the case of a fixed capacitor.
- the first step of the third disclosure extends the electrostatic actuator controller with at least one combination of the reference resistor 350 having the known resistance R ref and the switch 351, as shown in FIG. And introducing the following method for calculating the separation resistance R leak accurately.
- the capacitor starts with zero charge (ie, after resetting the capacitor by the reset switch 315) and uses the same constant current I applied by the current source 311 to make a constant current I> V max ⁇ (R leak ⁇ 1 ).
- the battery is charged twice under the condition of + R ref ⁇ 1 ).
- the voltage V is measured as a function of time.
- One charging cycle (characterized by time t 1 ) is performed while any of the reference resistors 350 are disconnected by the associated switch 351.
- the other charging cycle (characterized by time t 2 ) is performed while at least one reference resistor 350 is connected by closing at least one switch 351.
- the isolation resistance R leak can be calculated in relation to the known resistance R ref of the reference resistance 350.
- the second step of the third disclosure addresses the problem that the operating point defined by the charge quantity Q c exhibits drift due to the presence of non-negligible leakage currents in the actuator capacitor.
- Capacitance is a good indicator of the spacing between electrodes.
- FIG. 30 shows the situation of this special configuration of a parallel plate capacitor having at least one springed electrode.
- the HF capacitance measurement that applies the AC modulation voltage and detects the resulting current is the DC of the system to allow the method to apply the AC modulation voltage. Since it requires voltage control, it is not possible to do so.
- the voltage control region having the maximum value of V (Q) shown in FIG. 30 of the electrostatic actuator can access only the operating point on the branch portion 201, and any operating point on the branch portion 202 can be accessed. Can't even access.
- the actuator movement does not follow the modulation of the injected AC current from the AC current source 316.
- the actuator capacitive structures acts like a fixed capacitance capacitor against HF modulation signal of the current and voltage, capacitance is defined by the operating point calculated by the amount of charge Q c of the capacitor To do.
- HF capacitance measurement based on current injection is also possible in the presence of non-negligible leakage currents.
- the complex impedance is measured as described in the second disclosure.
- the separation resistance R leak can be calculated from the real part of the impedance, and the actual capacitance can be calculated from the imaginary part.
- the second step of the third disclosure addresses the problem of operating point drift due to non-negligible leakage currents and is compatible with the charge control region of the electrostatic actuator controller and closed to control the current I. Solved by using a capacitance measurement method that uses the capacitance value as the input of the feedback loop, thereby allowing the operating point defined by the capacitor charge Q c to be kept unchanged. Become.
- An additional third step of the third disclosure is to use the closed feedback loop described above as a precision measurement system for the isolation resistor R leak .
- the role of the closed feedback loop is to maintain the condition that Q c is constant.
- the value of the leakage current at a given operating point defined by the amount of charge Q c is the control over time while the closed feedback loop is active and in a stable state (after some transient time). It can be easily calculated by the average of the value “current I”.
- the fourth step of the third disclosure is to rely on the voltmeter 313 to measure the current generated by any current source, such as the DC current source 311 or the AC modulated current source 316, to be self-consistent.
- any current source such as the DC current source 311 or the AC modulated current source 316
- resistor R ref 350 or using several resistors with different resistance values separately if some combinations of reference resistor and associated switch are implemented)
- an additional switch 318 is introduced that can disconnect the capacitance C 310 of the actuator 370 from the circuit of the electrostatic actuator controller 360 for this recalibration measurement (see FIG. 36).
- the resistance of the reference resistor 350 (or several resistors if several reference resistors are implemented) can preferably be made in the ASIC structure, for example by laser trimming of resistance values. It is also worth noting that the reference resistor R ref 350 (each individual reference resistor value R ref, N ) is accessible from the outside. When the electrostatic actuator controller 360 is disconnected from the MEMS / MOEMS capacitive structure with the spring-loaded movable electrode 370, the resistance value (s) of the reference resistor (s) can be measured with an external resistance as required. Can be measured by the system.
- any active or passive component of the electrostatic actuator controller 360 is individually possible with the switches 312, 314, 317 and 351.
- the DC current source 311, the AC modulation current source 316, the voltmeter 313, the precision resistor 350, and the like can be calibrated by external access from the outside as required.
- the fifth step of the third disclosure is to introduce an extremely simplified mode of operation that does not use active feedback control.
- the voltage control is simple, as soon as the control voltage exceeds the voltage V max 203, it leads to an immediate runaway phenomenon called the “pull-in” phenomenon.
- the “retraction” phenomenon damages the actuator device, or at least its calibration characteristics.
- the third disclosure of step here is to consider the actuator is not negligible leakage current, it is the use of a simple constant current source for stabilizing the operation point defined by the amount of charge Q c . This method works as follows.
- the target operating point is set by adding the charge amount to the capacitor by the current source 311 and the switch 312.
- the resulting voltage V (Q c ) is measured by voltmeter 313 while switch 314 remains closed.
- a control current of value V (Q c ) / R leak is set.
- the beginning of the pull-in phenomenon can be detected on the basis of the monotonic drop of the generated voltage V / (Q c ) while the control current is constant.
- the charging process can be stopped and no “pull-in” phenomenon occurs.
- charge control or current control taught in the second disclosure for a micromachined MEMS / MOEMS system with a capacitive structure and at least one springable movable electrode It is feasible to apply this concept to such structures that exhibit non-negligible leakage currents.
- An electrostatic actuator controller extension and method (described in feature 1 of the second disclosure) for calculating a separation resistance of the capacitor of an electrical actuator controller for a machining MEMS / MOEMS electrostatic actuator system comprising: A capacitor system with a non-negligible leakage current and comprising at least one movable electrode, characterized in that the voltage V generated in the capacitor by the charge Q exhibits at least one maximum value as a function of the charge quantity Q;
- the electric actuator controller is The system is directly driven by the charge amount Q as a direct control of a source of mechanical force attracting between the capacitance electrodes,
- the extension of the electrostatic actuator controller is At least one additional precision resistor, and at least one associated switch for each resistor, is electrical
- a method for calculating an absolute value of the separation resistance R leak of the capacitor in the actuator system is as follows: The method includes charging the capacitor with a known constant current from zero charge, without closing and at least one of the switches associated with each precision resistor, and these charging processes.
- an electrostatic actuator controller with a compatible integrated HF capacitance measurement system (described in features 1 and 2 of the second disclosure) with a closed feedback loop for a fabricated MEMS / MOEMS electrostatic actuator system Part, The capacitor system with a non-negligible leakage current and comprising at least one movable electrode, characterized in that the voltage V generated in the capacitor by the charge Q exhibits at least one maximum value as a function of the charge quantity Q;
- Electric actuator controller The system is directly driven by the charge amount Q as a direct control of a source of mechanical force attracted between the capacitive electrodes,
- the compatible integrated HF capacitance measurement system is: First, the controller adds a certain amount of charge to the capacitance, so that the spacing between the plates is adjusted to be close
- the electric actuator controller includes a circuit for measuring the AC voltage modulation arising from the capacitor, thereby knowing the charge modulation ⁇ Q and the resulting modulated voltage to be measured ⁇ V between the electrodes of the electrostatic actuator system.
- the high-frequency capacitance of the capacitive structure formed by the instantaneous interval d can be calculated,
- the extension is The actuator is a controlled system, the current from the supply source is a control value, and the capacitance measured by the above-described “HF capacitance measurement based on current injection” should be kept constant.
- An extension of an electrostatic actuator controller characterized by: [Feature 3]
- An additional method for calculating the separation resistance of the capacitor when using an extension of the electrostatic actuator controller according to feature 2 comprising: The additional method is: After a transient time after the closed feedback loop is activated to keep the actuator's capacitance control charge Q c constant, Here, an average value of a control value, which is a control current I supplied by the current source under a closed loop operation, over a certain period of time is calculated and generated and measured by the charge amount Q c of the capacitor.
- the average value of the resulting voltage V over the same time is also calculated, And the capacitor's isolation resistance R leak is calculated by the ratio of both values, ie the average value of the resulting voltage divided by the average value of the current under closed loop control, the average value of the current under closed loop operation
- An additional method characterized in that it is possible because is equal to the operating point leakage current characterized by the control charge Q c and the resulting voltage V (Q c ).
- a micromachine having a non-negligible leakage current, having a capacitive structure with at least one spring-loaded movable electrode, and capable of changing the mechanical spacing d between the electrodes by the force applied to the capacitor by electrical means A simplified mode of operation of an electrostatic actuator controller (described in feature 1 of the second disclosure) for a processed MEMS / MOEMS electrostatic actuator system comprising: A capacitor system with a non-negligible leakage current and comprising at least one movable electrode, characterized in that the voltage V generated in the capacitor by the charge Q exhibits at least one maximum value as a function of the charge quantity Q; Electric actuator controller The system is directly driven by the charge amount Q as a direct control of a source of mechanical force attracting between the capacitance electrodes, The method for the simplified mode of operation is: Applicable only to a control charge amount between zero and Q c , Q c being less than the charge amount Q Vmax at which the voltage V (Q Vmax ) of the capacitor exhibits a
- the control current is reduced to a value equal to the leakage current V / R leak at this operating point, whereby the actuator is held at the operating point;
- the measured voltage is continuously monitored;
- the charge Q c is, as soon as the voltage of the capacitor exceeds the value Q Vmax indicating the first maximum value V max, the control current is immediately switched off, the electrodes are in contact with each other.
- the condition for switching off the control current is, but not limited to, preferably detected by a monotonically decreasing voltage while the control current is constant Operation mode.
- Method and (2) a current injection version of the HF capacitance measurement system as the sensed value, and a closed feedback loop that uses current as the control value; (3) an additional measurement system for quantifying leakage current using the closed feedback loop of item (2); (4) a self-calibration system and method that allows all AC and DC current sources to be calibrated using an integrated voltage measurement system; (5) No feedback provided, easy to implement, but can only address the operating range accessible using voltage control, but before the electrodes collide with each other as the electrodes accelerate towards zero spacing And a simplified control device by means of current, comprising means for monitoring and stopping the “pull-in” phenomenon.
- a highly reliable optical filter system can be provided.
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Abstract
Description
以下、本開示の一実施形態について、図面を参照しつつ詳細に説明する。なお、以下の説明において、同一又は相当要素には同一符号を用い、重複する説明を省略する。
[ファブリペロー干渉フィルタの構成]
[光学フィルタシステムの構成]
[作用効果]
[変形例]
[第2の開示]
[背景]
・構造体は、近接していてコンデンサを形成する2つの電極から成り、少なくとも一方の電極にはばねが取り付けられており、その電極が反対側の電極に向かって動くことが可能になっている。
・電極間の間隔dは、力Fが加えられたときに変化する。説明の目的で、ばねはフックの法則F=D×Δxに従うと仮定する。実際にはシステムの非線形性があり得るが、この非線形性は、ここで論じられる基本的な挙動を変えることがない。
・説明の目的で、2つの電極はコンデンサの極板を形成しており、これらの極板には、そのコンデンサへ外部から電気的にアクセスするための配線がされている。
・コンデンサは空気、保護ガスで充填されるか、又は真空中に配置される。
2×n×d=M×λ (式1)
ただし、
d:極板間の間隔
M:ファブリペロー干渉計の次数と呼ばれる整数
n:空洞内部の屈折率
(1)各デバイスは、それ自体の個々の波長較正が必要であり、これには費用がかかる。各デバイスには波長較正測定が行われ、最大伝送波長が多くの異なる制御電圧レベルに対して測定される。この測定は通常、1つの温度T0で行われる。
(2)長期的に安定した解決法を得るためには較正の安定性が調査される必要がある。応用例によっては、再較正が時折必要になり得る。
(3)ばね定数は温度と共に変化する。デバイスがシリコンで製造される場合、シリコン微小構造体の弾性は、温度依存性を有することが知られているヤング率と関連付けられる。異なる温度でのこのデバイスの使用法には次の2つの選択肢がある。
・各デバイスをそれぞれ異なる温度で較正する。この手順は極端に労力を要すると共に費用がかかり、数量の多い応用例ではそれらが顕著となり得る。
・一般的な温度モデルで動作させ、温度T1における較正を温度T0における測定波長較正から予測する。この場合、達成可能な精度は、一連の製造の再現性及び温度変動モデルの特性に強く依存する。自動車領域などの多くの応用例では、-40℃~105℃という非常に大きな動作温度範囲が必要とされ、他ではデバイスが、例えば、スペクトル測定デバイスを含むセンサの殺菌が必要である場合、大きな温度サイクルにさらされることさえあり得る。
(4)間隔がさまざまである微小機械加工MEMS/MOEMS平行極板コンデンサは、「引き込み」現象と呼ばれる現象を示す。制御電圧が特定のレベルを超えて増加すると、システムが突然不安定になり、可動極板が固定極板に向かって加速し、極板間の間隔が急速に減少し、極板が互いに衝突する。デバイスによっては、このタイプのいわゆる「引き込み」事故は、デバイス寿命の終わり若しくは性能劣化、又は少なくともデバイスの個々の較正特性の損失をもたらし得る。この暴走現象を確実に回避することは非常に重要である。
(5)その電圧を超えると「引き込み」現象が発生する制御電圧は、波長較正自体と同様に温度に依存する。このことは、印加制御電圧の許容動作範囲が温度依存性を有することを意味する。実際の応用例では、このことは、どの範囲の制御電圧であれば安全に印加され得るかを把握する前に、温度測定がまず行われなければならないことを意味する。
(6)サンプルごとに、「引き込み」電圧は製造系列でわずかに異なり得る。したがって、各個別のデバイスは、参照温度T0における許容制御電圧についてのそのデバイス自体の最大値、並びにこれらの最大値を他の温度に変換する規則を必要とする。すなわち、波長較正(波長多項式の係数)に加えて、個別のFPIデバイスごとに、処理する必要がある追加パラメータがある。
(7)製造において、初めて個々のFPIサンプルの特徴づけを実行するとき、個々の「引き込み」点はあらかじめ知られていない。何パーセントかのデバイスは単に「引き込み」現象によって欠陥品になり、それによって製造歩留まりが低下することになる。加えて、許容できる安全制御電圧動作範囲は、デバイスごとの良/不良の選択パラメータである。したがって、引き込み現象は、製造選択過程によってもまた、製造歩留まりを低下させる。
[開示の概要]
・静電アクチュエータを電気的に制御して、新規のコントローラ電子回路が結果として得られる新しい方法
・一方が準静的な、他方が高周波測定に基づいた、2つの新しい独立した間隔測定方法
・他の異なる動作の方法のためにコントローラを拡張すること、例えばリセットを導入すること、及び安定した共振励起のためにフィードバックを利用すること
(1)電圧ではなく電荷を制御する(DC電流及び時間の制御を含む)ことによって、アクチュエータシステムの電気制御を実現すること。可能な実施態様については、以下の別の項で説明する。電荷制御がDC電流を使用してなされる場合、第2の開示の1つの要点は、電気制御接続を切り換え可能にして、電荷源又は電流源をMEMS/MOEMS静電容量から、正確に制御可能な時間に接続又は切断することが可能になることである。こうすることにより、正確に規定された電荷量をMEMS/MOEMSコンデンサに、適切に規定された方法で付加することが可能になり、またコンデンサに生じる電荷量を、スイッチによって電気制御接続をただ切断することによって一定に(「凍結」、最大で漏洩電流までに)保持できるようになる。最後に、異なる応用例ニーズを対象とする複数の電荷供給回路があるので、これらの電流源ユニットは、電気的に切り換えることによって選択できることが好ましい。
[開示の詳細な説明]
<状況についての簡略説明>
F=D×Δx (式2)
ただし、Dはばね定数であり、
Δxはゼロ力の点からのばね102の伸びである。
|F|=(2ε0A)-1×Q2 (式3)
ただし、
ε0:誘電率定数
A:コンデンサの実効面積
Q:コンデンサの電荷
|F|:力Fの絶対値
コンデンサの静電容量は、単に次式で与えられる。
C=ε0A/d (式4)
静電容量が実際の間隔dに依存することに注意することが重要である。
C=Q/V及び式4を用いると、力Fは次式のように書き直すことができる。
|F|=0.5ε0A×V2/D2 (式5)
ただし、Vは制御電圧である。
制御電圧Vを使用すると、間隔dを次式のように制御電圧の関数として容易に記述することができる。
d=dM-D-1(ε0A/2)×V2/d2 (式6)
ただし、Dはばね定数である。
d=dM-D-1(2ε0A)-1×Q2 (式7)
(1)最初に、間隔は、電荷Qとそれにより発生した引力とによって決まる新しい間隔dに合致する。したがって、必要な制御電荷を間隔dの関数として容易に表すことができる。
Q(d)=(2ε0AD)1/2×(dM-d)1/2 (式8)
この状態は図14に示されている。
式8のQ(d)は、すべての間隔d<dMに対し適切に定義される。
(2)静電容量Cは、式4による新しい値に変わる。
(3)この所与の間隔でコンデンサの両端間に生じる電圧Vは次式で得られる。
V(d)=Q/C(d)=[2D/(ε0A)]1/2×(dM-d)1/2×d (式9)
d(V=Vmax)=2/3×dM (式10)
(1)単一の解はないが、電圧が特定の最大電圧値Vmax未満である限り、1つの所与の値における間隔dに対して、より安定した解がある(図15)。この発見は、式6がdに関して3次であり、3つの解に対してゼロとなり得ることに対応する。数学的に言えば、得られた従属d(V)は関数ではなく、関係である。間隔dの関数としての電圧は、勾配∂(d)/∂Vが無限大に発散する最大値を有する。同じ値のVを有する式6の2つの解(2つの可能なdの値を意味する)が互いに接近する場合、システムは不安定になり、システムは両状態の間で任意に振動し得る。制御電圧が最終的にVmaxを超える場合、このシステムには安定解がなく、結果として「引き込み」現象が発生する(詳細については図17~図20の図の描写を参照)。これらの理由のために、電圧Vは、アクチュエータシステムの制御パラメータとしては明らかに適していない。その結果、電圧制御は、非常に制限され部分的な範囲201の間隔dに対してだけ、適切な制御パラメータになる(今日の現状技術に対応して)。
電圧Vの代わりに電荷Qでシステムを制御すると、電圧は、MEMS/MOEMSアクチュエータの容量性構造体の電荷量Qにより生じる電圧V(Q)の意味を持つ。したがって、生じる電圧は、追加の情報を与える追加の測定量として役立ち得る。容量性構造体を有するMEMS/MOEMSシステムでは、MEMS/MOEMS平行極板コンデンサの生じる電圧を測定しながら、電荷量Qを定量的に制御することは、既知の式C=Q/Vに基づいた静的静電容量測定の単なる新しい方法であり、上式はここでよりよく次式のように書かれて、
C=Q/V(Q) (式11)
Qが動的に設定される制御値であること、及び
V(Q)が、電極の間隔を目標値dに設定するために必要な電荷Q(d)により生じる依存値であること
が示されるべきである。
・静電アクチュエータを所望の間隔dまで変位させるように電荷量Q(d)を設定する。
・電荷供給回路をコンデンサからスイッチによって切り離す。
・小信号AC電流源I(t)の供給源に接続する。
・印加AC電流レベルの関数としての、生じるAC電圧変調V(t)を測定する。
・角周波数ωの関数としての複素インピーダンスZ(ω)がZ(ω)=V(ω)/I(ω)によって得られ、求める静電容量CがC=(ω×|Z(ω)|)-1によって得られる。
・使用されるMEMS/MOEMS静電アクチュエータの容量の、間隔dに対する大まかな依存性が分かっていると、すべての瞬時の間隔値dを瞬時の電荷制御値Q、及び生じる電圧V(Q)から計算することができる。
・間隔dに対する依存性が分かっているMEMS/MOEMS平行極板コンデンサ(式4)では、ベストケース非個別完全波長較正多項式は、デバイスごとに測定され計算される必要がある。1つの間隔dを1つの既知の電荷量及び1つの温度において測定することが、主として実効コンデンサ面積Aの精密な把握のためには十分である。他のすべての従属要素は、動作中に、提案の方法によって間隔を算出することによって、つまり電圧を制御パラメータとして使用するのではなく電圧を測定量として利用可能にすることによって、測定することができる。
・実際の間隔dを変化させる温度変動は、実際の間隔dが再度測定されるときに顕著になる。
・長期のドリフト又はヒステリシスの影響は、実際の間隔dの新たな測定を例えばデバイスの走査制御の間に実行することによって除去される。
・アクチュエータ静電容量を所望の間隔dに調整するために電荷量Q(d)を設定する。
・実際の間隔dを、生じる電圧を測定することによって(すなわち、静的静電容量測定)、及び/又は電荷注入HF静電容量測定によって決定する。
・電荷供給回路をコンデンサからスイッチによって切り離す、或いは、電流源回路の振幅をゼロまで低減させる。
・振幅及び周波数が調整可能である小信号AC電流源を接続する。
・印加されたAC電流の関数としての、生じるAC電圧変調の振幅及び位相遅れを測定する。
・d=0からゼロ力状態d=dMまでのすべての間隔値に対処することができる。励起力及び周波数は任意に選ぶことができる。
・振動性MEMS/MOEMS静電アクチュエータシステムについて、生じる振幅及び位相遅れを決定することができ、それにより、動き状態の完全な制御を実現することができる。
・提案の方法は、すべての間隔dに対処し利用することができ、不安定さが全くなく、また「引き込み」現象の危険が全くない。
・システムの駆動力はQ2について線形である(式3)。これは次のことを示唆する。すなわち、電荷Qの正弦波変動によって生じる駆動力は、実際の間隔dと無関係であり、またこの力による影響を受けるシステムの実際の動きと無関係である。電圧制御を代わりに使用する場合、正弦波制御変調電圧を印加することは、力FがV2/d2に関係がある(式5)ことを意味する。励起力自体は、振動中の実際の間隔dに依存し、この間隔dは、次いでその力による影響を再現可能なように受ける。この循環依存性は、予測不可能且つ望ましくない影響をもたらし得る。
・第2の開示による方法は、振動周波数、振幅及び位相遅れの検出システムを提供し、この検出システムはパラメータdの機械的動きを直接検出する。生じる電圧V(AC変調を含む)は、式C=Q/Vと、間隔dを電圧Vから直接計算できるようにするV=Q/C=(Q/εoA)×d(式12)とした、式4とによって得られる。
[好ましい実施形態の詳細な説明]
[特徴1]
容量性構造体及び少なくとも1つのばね付き可動電極を備え、それによって、電気的手段によりコンデンサに印加された力によって前記電極間の機械的間隔dを変えることが可能になる微小機械加工MEMS/MOEMS静電アクチュエータシステム用の電気アクチュエータコントローラであって、
電荷Qにより前記コンデンサに生じる電圧Vが、電荷量Qの関数として少なくとも1つの最大値を示すことを特徴とする、少なくとも1つの可動電極を持つコンデンサシステムを備え、
前記電気アクチュエータコントローラが、
静電容量電極間における引き寄せる機械力の供給源の直接制御として、前記システムを前記電荷量Qによって直接駆動することを特徴とし、
前記電気アクチュエータコントローラが、
(1)原理的に繰り返し切り換え可能な外部負荷コンデンサなどの、既知の電荷量を正確に供給する、又は好ましくは、電荷供給回路のみによるとは限らない、1つ又は複数の電荷供給回路、
及び
(2)前記電荷供給回路を非常に高速に、且つ任意の時間において、且つ任意選択では繰り返し、前記アクチュエータのコンデンサからそれぞれ接続又は切断することを可能にする電子スイッチであり、それによって、前記アクチュエータのコンデンサの総電荷量を定量レベルに、前記1つ又は複数の使用される電荷供給回路の特性と共に、規定することが可能になると共に、特定の電荷量を、例えば(それだけには限らないが)、可動電極コンデンサシステムに基づいて実施される測定を実行する目的のために長期にわたり一定に保つことが可能になる、電子スイッチ
によって実現される、電気アクチュエータコントローラ。
[特徴2]
特徴1に記載の、前記電荷量Qを直接制御する前記電気アクチュエータコントローラを使用する場合の、特徴1に記載の前記微小機械加工MEMS/MOEMS静電アクチュエータシステムの前記電極間の間隔dによって形成される前記容量性構造体の瞬時の静電容量の測定システムであって、
本特徴の前記瞬時の静電容量の前記測定システムが、
コントローラシステムが、前記アクチュエータの静電容量への印加電荷量を制御すること、及び、この電荷量が既知であるか、又は前記電荷供給回路の特性及び前記スイッチのタイミングによって決定できること、
並びに、
前記電気アクチュエータコントローラが、前記コンデンサの両端間に生じる電圧を測定するための回路を含み、それにより、電荷量Q及び生じる電圧Vを知ることによって、前記静電アクチュエータシステムの前記電極間の瞬時の間隔dによって形成される前記容量性構造体の容量を決定できること
を特徴とする、測定システム。
[特徴3]
特徴1に記載の、前記電荷量Qを直接制御する前記電気アクチュエータコントローラを使用する場合の、特徴1に記載の前記微小機械加工MEMS/MOEMS静電アクチュエータシステムの前記電極間の間隔dによって形成される前記容量性構造体の瞬時の静電容量の測定システムであって、
本特徴の前記瞬時の静電容量の前記測定システムが、
まず、前記コントローラが一定の電荷量を前記静電容量に付加し、その結果、前記極板間の前記間隔が所望の間隔に近くなるように調整され、次に、前記電荷供給回路が可動極板コンデンサから切り離され、
次に、追加のスイッチを介して、振動平行極板コンデンサの共振周波数よりもずっと高い周波数のAC電流がそのコンデンサに注入され、
前記電気アクチュエータコントローラが、前記コンデンサから生じるAC電圧変調を測定するための回路を含み、それにより、電荷量変調ΔQ及び生じる被測定変調電圧ΔVを知ることによって、前記静電アクチュエータシステムの前記電極間の瞬時の間隔dによって形成される前記容量性構造体の高周波静電容量を決定する
ことを特徴とする、測定システム。
[特徴4]
特徴4に記載の、前記電荷量Qを直接制御する前記電気アクチュエータコントローラを使用する場合の、特徴1に記載の容量性構造体及び少なくとも1つのばね付き可動電極を備えた前記微小機械加工MEMS/MOEMS静電アクチュエータシステム用の、強制振動を励起し振動状態を測定するためのシステムであって、
本特徴の静電アクチュエータ用の、強制振動を励起し振動状態を測定するための前記システムが、
まず、前記コントローラが一定の電荷量を前記コンデンサに付加し、その結果、前記コンデンサの電極間の間隔が所望の間隔に近くなるように調整され、次に、前記電荷供給回路が前記コンデンサから切り離され、
次に、追加のスイッチを介して、調整可能な振幅、及び振動アクチュエータコンデンサの共振周波数よりも低いか、等しいか、又は高い周波数を有するAC電流がそのコンデンサに接続され、
前記AC電流が、前記振動アクチュエータコンデンサの強制機械振動を駆動し、
前記電気アクチュエータコントローラが、前記コンデンサから生じるAC電圧変調を測定するための、変調電圧振幅と印加AC電流の位相に対するその位相遅れとを検出できる回路を含み、それにより、少なくとも過渡振動位相の後に、前記静電アクチュエータの前記強制振動の振動状態を完全に決定することができる
ことを特徴とする、システム。
[特徴5]
特徴1~4による電気作動コントローラであって、前記電気作動コントローラの好ましい実施形態が、少なくとも1つのばね付き可動極板を備えた前記微小機械加工静電アクチュエータの近傍に好ましくは配置された特定用途向け集積回路(ASIC)によって実現されることを特徴とする、電気作動コントローラ。
[特徴6]
並列に接続された3つの電気構成要素、すなわち、切り換え可能バイポーラ電流源、切り換え可能高インピーダンス電圧計、及びリセットスイッチから成る静電アクチュエータの全部の機械的変位範囲を利用するための静電アクチュエータ制御システム。リセットスイッチは、静電アクチュエータを放電するために、且つアクチュエータをその機械的ゼロ位置まで動かすために使用される。バイポーラ電流源は、既知の電荷パケットを静電アクチュエータの電極に連続して堆積させるのに使用され、総堆積電荷Qの単調関数である機械的変位がもたらされる。電圧計は、静電アクチュエータの電極間の実際の電圧V(Q)を決定するのに使用される。この情報を用いて、アクチュエータの実効静電容量である1次導関数dQ/dV=(dV/dQ)-1が計算され、この実効静電容量を使用してアクチュエータの機械的位置を決定することができる。一動作周期が終了した後、バイポーラ電流源を能動的に使用して静電アクチュエータを放電する。この動作シーケンスは、デジタルコントローラシステムの制御のもとで実行される。
[第3の開示]
[背景]
C=εoA/d (式13)
ここで、
εo:誘電率定数
A:コンデンサの実効面積
d:電極間の間隔
・ゼロ電荷では、コンデンサの電圧もまたゼロである。
・電極の電荷量が増加すると電極間に引力が生じる。結果として、電極間の間隔dが縮小し、容量性構造体の容量が増加している。最初のうち、dが大きいときには、容量はdと共に徐々に変化している。したがって、コンデンサの電圧も増加している。
・堆積電荷量がさらに増加すると、電極間の間隔は減少するが、容量の増加は次第に速くなり、電極は互いに近づく(例えば、式13に見られるように)。その結果、電圧V(Q)は最大値Vmaxを有することになる。より大きい電荷量では、電荷量Qの増加にもかかわらずコンデンサの電圧は再び減少する。
・電圧制御を電荷量による制御領域に置き換えると、安全で「引き込み」のない動作が可能になる。
・電荷制御を用いると、V(Q)に最大値が存在すること、及び生じる「引き込み」現象の故に電圧制御によってはアクセス可能ではない電極間の間隔の調整範囲がアクセス可能になる。
・1つ又は複数の電流源とスイッチを組み合わせると、いかなる任意の電荷量Qcもアクチュエータの容量性構造体の電極に付加することができる。
・加えて、正確に制御された電荷量Qを有するコンデンサで生じる電圧V(Q)の測定を行うことは、アクチュエータの容量性システムの実際の静電容量を算出するための準静的な方法である。電極間の実際の間隔dは、静電容量と電極間の間隔との間の関係が例えば較正測定によって分かっている場合には、そのような実際の静電容量値から算出することができる。
・容量性構造体及び少なくとも1つのばね付き可動電極を備えた振動MEMS/MOEMSシステムの共振周波数よりも上の周波数を有するAC電流を注入し、さらにコンデンサの電圧のAC振幅を測定するのは、HF静電容量測定であり、この測定は、静電アクチュエータコントローラの電荷/電流制御との適合性がある。
[開示の概要]
[開示の詳細な説明]
Iはスイッチ312が閉じている間の時間の関数としての電流源311の電流であり、
V(Qc(t))は、電圧計313を用いて測定される、電荷Qcによるコンデンサの、スイッチ314が閉じているときの時間にわたる被測定「生じる電圧」であり、
toは開始時間であり、
t1は、実際の電荷量Qc(t)が考慮される又は制御されるべき実際の時間である。
・コンデンサは、ゼロ電荷(すなわち、リセットスイッチ315によるコンデンサのリセット後)から開始して、電流源311によって印加される同じ定電流Iを用いて、定電流I>Vmax×(Rleak -1+Rref -1)という条件で、2回充電される。
・充電サイクル中、電圧Vは時間の関数として測定される。
・一方の充電サイクル(時間t1によって特徴付けられる)が、参照抵抗350のいずれかが関連スイッチ351によって切り離されている間に実行される。
・他方の充電サイクル(時間t2によって特徴付けられる)が、少なくとも1つの参照抵抗350が少なくとも1つのスイッチ351を閉じることによって接続されている間に実行される。
Rleak -1=I/V(Q)-s1/(s1-s2)×Rref -1 (式15)
ここで、
Iは一定負荷電流、
V(Q)は、両方の充電シーケンスの被測定等電圧レベル、すなわち、V(t1)=V(t2)=V(Q)であり、
Rrefは参照精密抵抗器350である。
・まず、目標動作点が、電流源311及びスイッチ312により、その電荷量をコンデンサに付加することによって設定される。
・生じる電圧V(Qc)が、スイッチ314が閉じたままである間に、電圧計313によって測定される。
・値V(Qc)/Rleakの制御電流が設定される。
・デバイスが一旦電圧制御による動作の不安定範囲の中に入ると、暴走が極めて速く加速している。この過程は制御することができない。加えて、暴走現象の始まりを検出するための監視値がない。
・対照的に、上述の電流制御方法では、コンデンサをゆっくりと充電し、また監視値、すなわち電圧計313によって継続的に測定される生じる電圧V/(Qc)がある。
・したがって、引き込み現象の始まりは、生じる電圧V/(Qc)が、制御電流が一定である間は単調に降下することを基準にして検出することができる。この条件を検出すると、充電過程は停止させることができ、「引き込み」現象が起きない。
[特徴1]
無視できない漏洩電流があり、少なくとも1つのばね付き可動電極を持つ容量性構造体を備え、電気的手段によりコンデンサに印加された力によって前記電極間の機械的間隔dを変えることが可能な微小機械加工MEMS/MOEMS静電アクチュエータシステム用の電気アクチュエータコントローラの前記コンデンサの分離抵抗を算出するための、(第2の開示の特徴1に記載の)静電アクチュエータコントローラの拡張部及び方法であって、
無視できない漏洩電流があり、少なくとも1つの可動電極を備えたコンデンサシステムが、電荷Qにより前記コンデンサに生じる電圧Vが電荷量Qの関数として少なくとも1つの最大値を示すことを特徴とし、
前記電気アクチュエータコントローラが、
静電容量電極間における引き合う機械力の供給源の直接制御として、前記システムを前記電荷量Qによって直接駆動することを特徴とし、
前記静電アクチュエータコントローラの前記拡張部が、
少なくとも1つの追加の精密抵抗器、及び各抵抗器の少なくとも1つの関連スイッチが、前記精密抵抗器のいずれかが前記アクチュエータシステムの前記コンデンサにその分離抵抗Rleakと共に並列に電気的に接続されるように、導入されること、
及び
各抵抗器をそれ自体のスイッチによって前記コンデンサから接続又は切断できることを特徴とし、
前記アクチュエータシステムにおける前記コンデンサの前記分離抵抗Rleakの絶対値を算出する方法は、
前記方法が、前記コンデンサを電荷ゼロから既知の一定電流で、それぞれの精密抵抗器に関連したスイッチのうちの少なくとも1つを閉じずに、さらには閉じて充電することによって、及びこれらの充電過程中の前記生じる電圧の時間展開を測定及び記録することによって、実施されること、並びに、これらの時間展開の比較から、特に、それだけには限らないが、同じレベルの電圧Vにおける異なる勾配dV/dtから、前記分離抵抗の前記絶対値を算出することができ、それによって、このコンデンサの無視できない漏洩電流の存在下でアクチュエータのコンデンサQcにおける絶対電荷量を算出することが可能になること
を特徴とする、静電アクチュエータコントローラの拡張部及び方法。
[特徴2]
無視できない漏洩電流があり、少なくとも1つのばね付き可動電極を持つ容量性構造体を備え、電気的手段によりコンデンサに印加された力によって前記電極間の機械的間隔dを変えることが可能な微小機械加工MEMS/MOEMS静電アクチュエータシステム用の閉フィードバックループによる、(第2の開示の特徴1及び2に記載の)適合性のある一体化HF静電容量測定システムを備えた静電アクチュエータコントローラの拡張部であって、
無視できない漏洩電流があり、少なくとも1つの可動電極を備えた前記コンデンサシステムが、電荷Qにより前記コンデンサに生じる電圧Vが前記電荷量Qの関数として少なくとも1つの最大値を示すことを特徴とし、
電気アクチュエータコントローラが、
前記静電容量電極間の引き合う機械力の供給源の直接制御として、前記システムを前記電荷量Qによって直接駆動することを特徴とし、
前記適合性のある一体化HF静電容量測定システムは、
まず、前記コントローラが一定の電荷量を前記静電容量に付加し、その結果、極板間の間隔が所望の間隔に近くなるように調整され、次に、電荷供給回路が可動極板コンデンサから切り離され、
次に、追加のスイッチを介して、振動平行極板コンデンサの共振周波数よりもずっと高い周波数のAC電流が前記コンデンサに注入され、
前記電気アクチュエータコントローラが、前記コンデンサから生じるAC電圧変調を測定するための回路を含み、それにより、電荷量変調ΔQ及び生じる被測定変調電圧ΔVを知ることによって、前記静電アクチュエータシステムの前記電極間の瞬時の間隔dによって形成される前記容量性構造体の高周波静電容量を算出できることを特徴とし、
前記拡張部は、
前記アクチュエータが被制御システムであり、前記供給源からの電流が制御値であり、上述の「電流注入に基づくHF静電容量測定」によって測定される静電容量が一定に保持されるべき検知値である、閉ループ制御が導入され、
それによって、前記コンデンサの電荷量Qcによって制御される任意の規定動作点に前記アクチュエータを、このコンデンサに無視できない漏洩電流が存在するにもかかわらず、安定して保持することが可能になることを特徴とする、静電アクチュエータコントローラの拡張部。
[特徴3]
特徴2に記載の静電アクチュエータコントローラの拡張部を使用するときの、前記コンデンサの前記分離抵抗を算出するための追加の方法であって、
前記追加の方法が、
前記閉フィードバックループが、前記アクチュエータの静電容量の制御電荷量Qcを一定に保持するためにアクティブにされた後の過渡時間後に、
ここでは特に閉ループ動作のもとで前記電流源によって供給される制御電流Iである制御値の、ある時間にわたる平均値が算出されると共に、前記コンデンサの電荷量Qcによって生成され、測定された生じる電圧Vの同じ時間にわたる平均値もまた算出されること、
及び
前記コンデンサの分離抵抗Rleakを両方の値の比、すなわち生じる電圧の平均値を閉ループ制御下の電流の平均値で割ったもの、によって計算することが、閉ループ動作下の前記電流の平均値が制御電荷Qc及び前記生じる電圧V(Qc)によって特徴付けられる動作点の漏洩電流と等しいので、可能であることを特徴とする、追加の方法。
[特徴4]
特徴1及び2に記載の静電アクチュエータコントローラの拡張部、及び自己較正のための関連方法であって、
前記拡張部は、
前記アクチュエータの静電容量を前記静電アクチュエータコントローラ回路から接続又は切断できる追加スイッチが導入されることを特徴とし、
前記関連方法は、
前記アクチュエータの静電容量が切り離され、精密抵抗器と関連した前記スイッチによって、前記精密抵抗器のうちの少なくとも1つが前記コンデンサの代わりに前記様々な電流源、及び電圧測定システムに、前記抵抗器用の前記関連スイッチを閉じることによって接続され、それにより、前記静電アクチュエータコントローラに取り付けられた任意の電流源のDC又はACの電流によって生じる前記抵抗器の電圧降下を測定することができ、電流出力を内部電圧測定システムに基づいて再較正できることを特徴とする、静電アクチュエータコントローラの拡張部、及び自己較正のための関連方法。
[特徴5]
無視できない漏洩電流があり、少なくとも1つのばね付き可動電極を持つ容量性構造体を備え、電気的手段によりコンデンサに印加された力によって前記電極間の機械的間隔dを変えることが可能な微小機械加工MEMS/MOEMS静電アクチュエータシステム用の(第2の開示の特徴1に記載の)静電アクチュエータコントローラの簡略化動作モードであって、
無視できない漏洩電流があり、少なくとも1つの可動電極を備えたコンデンサシステムが、電荷Qにより前記コンデンサに生じる電圧Vが前記電荷量Qの関数として少なくとも1つの最大値を示すことを特徴とし、
電気アクチュエータコントローラが、
静電容量電極間における引き合う機械力の供給源の直接制御として、前記システムを前記電荷量Qによって直接駆動することを特徴とし、
前記簡略化動作モードのための方法は、
ゼロとQcの間の制御電荷量に対してのみ応用可能であり、Qcが、前記コンデンサの電圧V(QVmax)が第1の最大値Vmaxを示す電荷量QVmaxよりも少ないこと、
及び
所望の動作点が、前記コンデンサの無視できない漏洩電流の存在下で、前記コンデンサの実際の測定電圧と、例えば、それだけには限らないが、前の特徴1又は2に従って算出されるその分離抵抗Rleakとから計算できる、電荷量Qcの対応する値まで前記コンデンサを充電することによって設定され、
次に、前記制御電流を、この動作点における漏洩電流V/Rleakに等しい値まで低減させ、それにより前記アクチュエータが前記動作点に保持され、
前記測定電圧が継続して監視され、
前記電荷Qcが何らかの理由で、前記コンデンサの電圧が前記第1の最大値Vmaxを示す値QVmaxを超えるとすぐに、前記制御電流が即座にスイッチオフされて、前記電極が互いに接触することによる前記コンデンサの破壊が回避され、
前記制御電流をスイッチオフする条件が、それだけには限らないが、前記制御電流が一定である間に電圧が単調に低下することによって好ましくは検出されることを特徴とする、静電アクチュエータコントローラの簡略化動作モード。
[特徴6]
第2の開示による電荷制御に基づく、少なくとも1つの可動ばね付き電極を持つ容量性構造体を備えたアクチュエータ用の静電アクチュエータ制御システムの拡張が、アクチュエータのコンデンサが無視できない漏洩電流を示す場合について開示される。この拡張は、
(1)精密抵抗器と、ある時間にわたる注入電流、及び生じる電圧のある時間にわたる測定値からコンデンサの電荷量Qcを計算することを可能にする、コンデンサの分離抵抗Rleakを定量化する関連方法と、
(2)検知値としてHF静電容量測定システムの電流注入バージョン、及び制御値として電流を使用する閉フィードバックループと、
(3)項目(2)の閉フィードバックループを使用して漏洩電流を定量化するための追加測定システムと、
(4)一体化電圧測定システムを用いてすべてのAC及びDC電流源を較正できるようにする自己較正システム及び方法と、
(5)フィードバックを備えず、実施するのが容易であるが、電圧制御を用いてもアクセスできる動作範囲にしか対処できない、しかし、電極が間隔ゼロに向けて加速して電極が互いに衝突する前に「引き込み」現象を監視し止める手段を備える、電流による簡略化制御装置と
から成る。
Claims (8)
- ファブリペロー干渉フィルタと、
前記ファブリペロー干渉フィルタを制御するコントローラと、を備え、
前記ファブリペロー干渉フィルタは、
第1ミラー部と、
空隙を介して前記第1ミラー部と向かい合うように配置され、光透過領域における前記第1ミラー部との間の距離が静電気力により調整される第2ミラー部と、
前記第1ミラー部と前記第2ミラー部とが互いに向かい合う方向から見た場合に、前記光透過領域を囲むように前記第1ミラー部に設けられた第1駆動電極と、
前記第1駆動電極と向かい合うように前記第2ミラー部に設けられた第2駆動電極と、
前記方向から見た場合に少なくとも一部が前記光透過領域と重なるように前記第1ミラー部に設けられ、前記第1駆動電極から電気的に絶縁された第1モニタ電極と、
前記第1モニタ電極と向かい合うように前記第2ミラー部に設けられ、前記第2駆動電極から電気的に絶縁された第2モニタ電極と、を備え、
前記コントローラは、
前記第1駆動電極と前記第2駆動電極との間に駆動電流を印加することにより前記静電気力を発生させる第1電流源と、
前記第1ミラー部及び前記第2ミラー部の共振周波数よりも高い周波数を有する交流電流を前記第1モニタ電極と前記第2モニタ電極との間に印加する第2電流源と、
前記交流電流の印加中に前記第1モニタ電極と前記第2モニタ電極との間に発生する交流電圧を検出する検出部と、
前記第1ミラー部と前記第2ミラー部との間に蓄えられる電荷量に基づいて前記第1電流源を制御すると共に、前記検出部の検出結果に基づいて前記第1ミラー部と前記第2ミラー部との間の静電容量を算出する制御部と、を備える、光学フィルタシステム。 - 前記第1駆動電極は、前記空隙に露出している、請求項1に記載の光学フィルタシステム。
- 前記第2駆動電極は、前記第2ミラー部の前記空隙とは反対側の表面に配置されている、請求項1又は2に記載の光学フィルタシステム。
- 前記第2駆動電極は、前記空隙に露出している、請求項1又は2に記載の光学フィルタシステム。
- 前記第1モニタ電極は、前記空隙に露出している、請求項1~4のいずれか一項に記載の光学フィルタシステム。
- 前記第2モニタ電極は、前記空隙に露出している、請求項1~5のいずれか一項に記載の光学フィルタシステム。
- 前記第2モニタ電極は、前記第2ミラー部の前記空隙とは反対側の表面に配置されている、請求項1~5のいずれか一項に記載の光学フィルタシステム。
- 前記第2駆動電極と前記第2モニタ電極とは、前記方向において互いに離間している、請求項1~5のいずれか一項に記載の光学フィルタシステム。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11320473B2 (en) * | 2016-08-22 | 2022-05-03 | Pioneer Corporation | Capacitance detection device and optical wavelength-selective filter device |
DE102020131378A1 (de) | 2020-11-26 | 2022-06-02 | Bundesdruckerei Gmbh | Verfahren und Vorrichtung zum Bedrucken eines Endlosmaterials von einer Materialrolle |
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US20220342202A1 (en) * | 2021-04-26 | 2022-10-27 | Texas Instruments Incorporated | Circuits and methods to calibrate mirror displacement |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5969513A (en) | 1998-03-24 | 1999-10-19 | Volterra Semiconductor Corporation | Switched capacitor current source for use in switching regulators |
JP2001228326A (ja) * | 2000-02-18 | 2001-08-24 | Yokogawa Electric Corp | ファブリペローフィルタ及び赤外線ガス分析計 |
JP2003014641A (ja) * | 2001-07-04 | 2003-01-15 | Yokogawa Electric Corp | 赤外分析装置 |
US20050226281A1 (en) * | 2002-03-08 | 2005-10-13 | Lorenzo Faraone | Tunable cavity resonator and method of fabricating same |
JP2012141347A (ja) * | 2010-12-28 | 2012-07-26 | Seiko Epson Corp | 波長可変干渉フィルター、光モジュール、及び光分析装置 |
JP2014153389A (ja) * | 2013-02-05 | 2014-08-25 | Seiko Epson Corp | 光学モジュール、電子機器、及び分光カメラ |
JP2015004886A (ja) | 2013-06-21 | 2015-01-08 | 株式会社デンソー | ファブリペローフィルタ、それを備えたファブリペロー干渉計、および、ファブリペローフィルタの製造方法 |
JP2015011312A (ja) * | 2013-07-02 | 2015-01-19 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタ |
JP2015143741A (ja) * | 2014-01-31 | 2015-08-06 | セイコーエプソン株式会社 | 干渉フィルター、光学フィルターデバイス、光学モジュール、電子機器、及び干渉フィルターの製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6590710B2 (en) * | 2000-02-18 | 2003-07-08 | Yokogawa Electric Corporation | Fabry-Perot filter, wavelength-selective infrared detector and infrared gas analyzer using the filter and detector |
JP3835525B2 (ja) | 2001-03-19 | 2006-10-18 | ホーチキ株式会社 | 波長可変フィルタ制御装置 |
KR20060052774A (ko) | 2003-07-01 | 2006-05-19 | 티악스 엘엘씨 | 용량성 위치 센서 및 감지 방법 |
JP2005165067A (ja) | 2003-12-03 | 2005-06-23 | Seiko Epson Corp | 波長可変フィルタおよび波長可変フィルタの製造方法 |
JP2008036199A (ja) * | 2006-08-08 | 2008-02-21 | Olympus Corp | 内視鏡システム |
US8218228B2 (en) | 2009-12-18 | 2012-07-10 | Qualcomm Mems Technologies, Inc. | Two-terminal variable capacitance MEMS device |
JP5888080B2 (ja) | 2012-04-11 | 2016-03-16 | セイコーエプソン株式会社 | 波長可変干渉フィルター、光学フィルターデバイス、光学モジュール、電子機器、及び波長可変干渉フィルターの駆動方法 |
JP2013238755A (ja) | 2012-05-16 | 2013-11-28 | Seiko Epson Corp | 光学モジュール、電子機器、食物分析装置、分光カメラ、及び波長可変干渉フィルターの駆動方法 |
JP6211833B2 (ja) | 2013-07-02 | 2017-10-11 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタ |
JP6264810B2 (ja) * | 2013-09-27 | 2018-01-24 | セイコーエプソン株式会社 | 干渉フィルター、光学フィルターデバイス、光学モジュール、及び電子機器 |
JP6356427B2 (ja) * | 2014-02-13 | 2018-07-11 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタ |
WO2017057372A1 (ja) * | 2015-10-02 | 2017-04-06 | 浜松ホトニクス株式会社 | 光検出装置 |
-
2018
- 2018-06-12 CN CN201880039038.6A patent/CN110741304B/zh active Active
- 2018-06-12 KR KR1020207001016A patent/KR102669193B1/ko active IP Right Grant
- 2018-06-12 JP JP2019525464A patent/JP7221200B2/ja active Active
- 2018-06-12 EP EP18818635.7A patent/EP3640703A4/en active Pending
- 2018-06-12 US US16/621,919 patent/US11480783B2/en active Active
- 2018-06-12 WO PCT/JP2018/022446 patent/WO2018230567A1/ja unknown
- 2018-06-13 TW TW107120311A patent/TWI787280B/zh active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5969513A (en) | 1998-03-24 | 1999-10-19 | Volterra Semiconductor Corporation | Switched capacitor current source for use in switching regulators |
JP2001228326A (ja) * | 2000-02-18 | 2001-08-24 | Yokogawa Electric Corp | ファブリペローフィルタ及び赤外線ガス分析計 |
JP2003014641A (ja) * | 2001-07-04 | 2003-01-15 | Yokogawa Electric Corp | 赤外分析装置 |
US20050226281A1 (en) * | 2002-03-08 | 2005-10-13 | Lorenzo Faraone | Tunable cavity resonator and method of fabricating same |
JP2012141347A (ja) * | 2010-12-28 | 2012-07-26 | Seiko Epson Corp | 波長可変干渉フィルター、光モジュール、及び光分析装置 |
JP2014153389A (ja) * | 2013-02-05 | 2014-08-25 | Seiko Epson Corp | 光学モジュール、電子機器、及び分光カメラ |
JP2015004886A (ja) | 2013-06-21 | 2015-01-08 | 株式会社デンソー | ファブリペローフィルタ、それを備えたファブリペロー干渉計、および、ファブリペローフィルタの製造方法 |
JP2015011312A (ja) * | 2013-07-02 | 2015-01-19 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタ |
JP2015143741A (ja) * | 2014-01-31 | 2015-08-06 | セイコーエプソン株式会社 | 干渉フィルター、光学フィルターデバイス、光学モジュール、電子機器、及び干渉フィルターの製造方法 |
Non-Patent Citations (3)
Title |
---|
B.R. GREGOIREU-K. MOON, IEE TRANS. CIRC. SYS. II : EXPRESS BRIEFS, vol. 54, no. 3, March 2007 (2007-03-01) |
HAMAMATSU PHOTONICS, TECHNICAL NOTE: MEMS-FPI SPECTRUM SENSORS C13272-01/02, May 2017 (2017-05-01) |
See also references of EP3640703A4 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11320473B2 (en) * | 2016-08-22 | 2022-05-03 | Pioneer Corporation | Capacitance detection device and optical wavelength-selective filter device |
DE102020131378A1 (de) | 2020-11-26 | 2022-06-02 | Bundesdruckerei Gmbh | Verfahren und Vorrichtung zum Bedrucken eines Endlosmaterials von einer Materialrolle |
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