WO2018225191A1 - Adhésif sous forme de film pour semi-conducteur, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci - Google Patents

Adhésif sous forme de film pour semi-conducteur, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci Download PDF

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Publication number
WO2018225191A1
WO2018225191A1 PCT/JP2017/021143 JP2017021143W WO2018225191A1 WO 2018225191 A1 WO2018225191 A1 WO 2018225191A1 JP 2017021143 W JP2017021143 W JP 2017021143W WO 2018225191 A1 WO2018225191 A1 WO 2018225191A1
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WIPO (PCT)
Prior art keywords
adhesive
film
semiconductor
component
compound
Prior art date
Application number
PCT/JP2017/021143
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English (en)
Japanese (ja)
Inventor
利泰 秋吉
Original Assignee
日立化成株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to PCT/JP2017/021143 priority Critical patent/WO2018225191A1/fr
Priority to KR1020197036965A priority patent/KR102351843B1/ko
Priority to JP2019523276A priority patent/JP6958615B2/ja
Priority to KR1020227000993A priority patent/KR102412246B1/ko
Priority to PCT/JP2018/009996 priority patent/WO2018225323A1/fr
Priority to JP2019523347A priority patent/JP7173002B2/ja
Priority to KR1020197033477A priority patent/KR102455211B1/ko
Priority to JP2019523953A priority patent/JP7196839B2/ja
Priority to PCT/JP2018/021767 priority patent/WO2018225800A1/fr
Priority to KR1020197033478A priority patent/KR102508048B1/ko
Priority to TW112116618A priority patent/TWI827512B/zh
Priority to TW110143443A priority patent/TWI804062B/zh
Priority to TW107119655A priority patent/TWI748105B/zh
Publication of WO2018225191A1 publication Critical patent/WO2018225191A1/fr
Priority to JP2021155359A priority patent/JP7226498B2/ja
Priority to JP2022165348A priority patent/JP7351393B2/ja
Priority to JP2023007401A priority patent/JP7380926B2/ja
Priority to JP2023147054A priority patent/JP2023164554A/ja
Priority to JP2023181615A priority patent/JP2024003019A/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3613—Polymers, e.g. resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Definitions

  • the present invention relates to a film adhesive for semiconductor, a method for manufacturing a semiconductor device, and a semiconductor device.
  • a COB (Chip On Board) type connection method that is widely used in BGA (Ball Grid Array), CSP (Chip Size Package), and the like also corresponds to the FC connection method.
  • the FC connection method is also widely used in a COC (Chip On Chip) type connection method in which connection portions (for example, bumps and wirings) are formed on a semiconductor chip to connect the semiconductor chips.
  • chip stack type packages For packages that are strongly required to be further reduced in size, thickness, and functionality, chip stack type packages, POP (Package On Package), TSV (Through), in which chips are stacked by using the connection method described above to be multi-staged. -Silicon Via) etc. are also starting to spread widely.
  • Such stacking / multi-stage technology arranges semiconductor chips and the like three-dimensionally, so that the package can be made smaller than the two-dimensional arrangement technique.
  • it is effective as a next-generation semiconductor wiring technology because it is effective for improving the performance of semiconductors, reducing noise, reducing the mounting area, and saving power.
  • connection reliability for example, insulation reliability
  • the main metal used for the connection part include solder, tin, gold, silver, copper, nickel, and the like, and conductive materials including a plurality of these are also used.
  • the metal used for the connection part may oxidize on the surface and produce an oxide film, and impurities such as oxide may adhere to the surface, which may cause impurities on the connection surface of the connection part. is there. If such impurities remain, connection reliability (for example, insulation reliability) between the semiconductor chip and the substrate or between the two semiconductor chips decreases, and the merit of employing the above-described connection method is impaired. There is concern.
  • connection portion known by OSP (Organic Solderability Preservatives) processing with an anti-oxidation film
  • OSP Organic Solderability Preservatives
  • this anti-oxidation film has a solder wettability during the connection process. May cause a decrease in connectivity and connectivity.
  • an object of the present invention is to provide a film-like adhesive for semiconductors that can obtain excellent connection reliability even when the crimping time is shortened.
  • Another object of the present invention is to provide a semiconductor device using such a semiconductor film adhesive and a method for manufacturing the same.
  • the film-like adhesive for semiconductor of the present invention comprises a first layer comprising a first adhesive containing a flux compound, and a second adhesive provided on the first layer and substantially free of a flux compound.
  • a second layer made of an agent.
  • the second layer is hardly affected by the flux compound, so that the second layer is cured quickly and sufficiently after the connection portions are brought into contact with each other.
  • excellent connection reliability eg, insulation reliability
  • the flip chip package can be easily enhanced in function and integrated.
  • voids may occur when the adhesives for semiconductors are hot-pressed in a state where they are not sufficiently cured.
  • the film-like adhesive for semiconductors of the present invention since it can be sufficiently cured in a short time, generation of voids can be easily suppressed.
  • solder, copper, and the like tend to be used as the metal for the connection portion in place of gold that is not easily corroded for the purpose of cost reduction.
  • OSP Organic Solderability Preservative
  • the second adhesive has a curing reaction rate of 80% or more when held at 200 ° C. for 5 seconds. In this case, better connection reliability can be obtained even when the pressure bonding is performed at a high temperature in a short time.
  • the second adhesive preferably contains a radical polymerizable compound and a thermal radical generator.
  • a radical polymerizable compound and a thermal radical generator.
  • the thermal radical generator is preferably a peroxide. In this case, since the further excellent handling property and storage stability are obtained, the further excellent connection reliability is easy to be obtained.
  • the radical polymerizable compound is preferably a (meth) acrylic compound. In this case, it is easy to obtain better connection reliability.
  • the (meth) acrylic compound preferably has a fluorene skeleton. In this case, it is easy to obtain better connection reliability.
  • the flux compound preferably has a carboxyl group, and more preferably has two or more carboxyl groups. In this case, it is easy to obtain better connection reliability.
  • the flux compound is preferably a compound represented by the following formula (2).
  • R 1 and R 2 each independently represent a hydrogen atom or an electron-donating group, and n represents 0 or an integer of 1 or more.
  • the melting point of the flux compound is preferably 150 ° C. or lower.
  • the flux is melted before the adhesive is cured at the time of thermocompression bonding, and the oxide film such as solder is reduced and removed, so that it is easy to obtain better connection reliability.
  • a semiconductor device in which respective connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or each connection portion of a plurality of semiconductor chips is electrically connected to each other.
  • a method for manufacturing a semiconductor device comprising the step of sealing at least a part of a connecting portion using the above-described film-like adhesive for semiconductor.
  • a semiconductor device having excellent connection reliability for example, insulation reliability
  • a semiconductor device excellent in connection reliability for example, insulation reliability
  • the semiconductor device of the present invention is a semiconductor device in which the connection portions of the semiconductor chip and the printed circuit board are electrically connected to each other, or the semiconductor device in which the connection portions of the plurality of semiconductor chips are electrically connected to each other. And at least one part of the connection part is sealed with the hardened
  • This semiconductor device is excellent in continuous reliability (for example, insulation reliability).
  • the present invention it is possible to provide a film adhesive for a semiconductor that can obtain excellent connection reliability even when the crimping time is shortened. Moreover, according to this invention, the semiconductor device using such a film-form adhesive for semiconductors and its manufacturing method can be provided.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention.
  • FIG. 2 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention.
  • FIG. 3 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention.
  • FIG. 4 is a process cross-sectional view schematically showing one embodiment of a method for manufacturing a semiconductor device of the present invention.
  • (meth) acrylate means at least one of acrylate and methacrylate corresponding thereto.
  • the numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.
  • the film-like adhesive for semiconductor of this embodiment is provided on the first layer (flux-containing layer) made of the first adhesive containing the flux compound and the first layer, and substantially contains the flux compound. And a second layer (a flux non-containing layer) made of a second adhesive not contained.
  • the film adhesive for a semiconductor according to the present embodiment is, for example, a semiconductor device in which connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or connection portions of a plurality of semiconductor chips are electrically connected to each other. This is used to seal at least a part of the connection portion in a semiconductor device connected in a general manner.
  • the crimping time (for example, the crimping time in the crimping process for joining the semiconductor chip and the printed circuit board) is shortened. Even if it is a case (for example, when crimping time is 5 seconds or less), excellent connection reliability can be obtained.
  • the first adhesive contains, for example, a thermosetting component and a flux compound.
  • the thermosetting component include a thermosetting resin and a curing agent.
  • the thermosetting resin include an epoxy resin, a phenol resin (except when contained as a curing agent), a polyimide resin, and the like. Among these, it is preferable that the thermosetting resin is an epoxy resin.
  • the film-form adhesive for semiconductors of this embodiment may contain the high molecular component and filler whose weight average molecular weight is 10,000 or more as needed.
  • the first adhesive comprises an epoxy resin (hereinafter sometimes referred to as “component (a)”), a curing agent (hereinafter sometimes referred to as “component (b)”), and a flux compound (hereinafter referred to as “component (a)”).
  • component (c) it is referred to as “component (c)”
  • component (d) a polymer component having a weight average molecular weight of 10,000 or more
  • component (E) component a filler
  • (A) component epoxy resin
  • Any epoxy resin can be used without particular limitation as long as it has two or more epoxy groups in the molecule.
  • the component (a) for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, triphenyl A methane type epoxy resin, a dicyclopentadiene type epoxy resin, and various polyfunctional epoxy resins can be used. These can be used alone or as a mixture of two or more.
  • the thermal weight loss rate at 250 ° C. is 5% or less. It is preferable to use an epoxy resin.
  • the temperature at the time of connection is 300 ° C., it is preferable to use an epoxy resin having a thermal weight loss rate of 5% or less at 300 ° C.
  • the content of the component (a) is, for example, 5 to 75% by mass, preferably 10 to 50% by mass, and more preferably 15 to 35% by mass, based on the total amount of the first adhesive.
  • component (b) curing agent
  • component (b) examples include phenol resin curing agents, acid anhydride curing agents, amine curing agents, imidazole curing agents, and phosphine curing agents.
  • component (B) When the component contains a phenolic hydroxyl group, an acid anhydride, an amine or an imidazole, it exhibits a flux activity that suppresses the formation of an oxide film at the connection part, and improves connection reliability and insulation reliability. it can.
  • each curing agent will be described.
  • Phenolic resin-based curing agent The phenolic resin-based curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule.
  • phenol novolak resin, cresol novolac resin, phenol aralkyl resin Cresol naphthol formaldehyde polycondensate, triphenylmethane type polyfunctional phenol resin and various polyfunctional phenol resins can be used. These can be used alone or as a mixture of two or more.
  • Equivalent ratio of phenol resin-based curing agent to component (a) is excellent curability and adhesiveness. From the viewpoint of storage stability, 0.3 to 1.5 is preferable, 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable. When the equivalence ratio is 0.3 or more, the curability tends to be improved and the adhesive force tends to be improved. When the equivalent ratio is 1.5 or less, the unreacted phenolic hydroxyl group does not remain excessively, and the water absorption is increased. It tends to be kept low and the insulation reliability improves.
  • Acid anhydride curing agent examples include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol bis.
  • Anhydro trimellitate can be used. These can be used alone or as a mixture of two or more.
  • the equivalent ratio of the acid anhydride curing agent to the component (a) is good curability. From the viewpoint of adhesiveness and storage stability, 0.3 to 1.5 is preferable, 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable. When the equivalence ratio is 0.3 or more, the curability is improved and the adhesive force tends to be improved. When the equivalent ratio is 1.5 or less, the unreacted acid anhydride does not remain excessively, and the water absorption rate is increased. It tends to be kept low and the insulation reliability improves.
  • Amine-based curing agent for example, dicyandiamide can be used.
  • Equivalent ratio of amine-based curing agent to component (a) is good curability, adhesion and storage From the viewpoint of stability, 0.3 to 1.5 is preferable, 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable. If the equivalence ratio is 0.3 or more, the curability tends to be improved and the adhesive strength tends to be improved. If the equivalent ratio is 1.5 or less, excessive unreacted amine does not remain and the insulation reliability is improved. Tend to.
  • Imidazole-based curing agent examples include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1- Cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6 -[2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl-s-triazine, 2, 4-Diamino-6- [2′-ethyl-4′-methylimidazolyl
  • the content of the imidazole curing agent is preferably 0.1 to 20 parts by mass, more preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of component (a).
  • sclerosis hardenability to improve that content of an imidazole type hardening
  • curing agent is 0.1 mass part or more.
  • the content of the imidazole-based curing agent is 20 parts by mass or less, the fluidity of the first adhesive at the time of pressure bonding can be ensured, and the first adhesive between the connection parts is sufficiently eliminated. be able to.
  • the first adhesive is suppressed from being cured while intervening between the solder and the connection portion, there is a tendency that poor connection is unlikely to occur.
  • (V) Phosphine curing agent examples include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra (4-methylphenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate. Be listed.
  • the content of the phosphine-based curing agent is preferably 0.1 to 10 parts by mass and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the component (a). If the content of the phosphine-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and if it is 10 parts by mass or less, the first adhesive is cured before the metal bond is formed. There is a tendency that poor connection is unlikely to occur.
  • a phenol resin curing agent, an acid anhydride curing agent, and an amine curing agent can be used singly or as a mixture of two or more.
  • the imidazole-based curing agent and the phosphine-based curing agent may each be used alone, but may be used together with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.
  • the first adhesive contains a phenol resin curing agent, an acid anhydride curing agent, or an amine curing agent as the component (b), it exhibits a flux activity for removing the oxide film and further improves connection reliability. be able to.
  • the component (c) is a compound having a flux activity, and functions as a flux agent in the first adhesive.
  • any known component can be used as long as it can reduce and remove an oxide film on the surface of solder or the like to facilitate metal bonding.
  • one type of flux compound may be used alone, or two or more types of flux compounds may be used in combination.
  • the curing agent which is the component (b) is not included in the component (c).
  • the flux compound preferably has a carboxyl group, and more preferably has two or more carboxyl groups, from the viewpoint of obtaining sufficient flux activity and better connection reliability.
  • a compound having two carboxyl groups is preferable. Compared with a compound having one carboxyl group (monocarboxylic acid), a compound having two carboxyl groups is less likely to volatilize even at a high temperature during connection, and the generation of voids can be further suppressed.
  • the use of a compound having two carboxyl groups further suppresses the increase in viscosity of the film adhesive for semiconductors during storage and connection work compared to the case of using a compound having three or more carboxyl groups. Thus, the connection reliability of the semiconductor device can be further improved.
  • the flux compound having a carboxyl group a compound having a group represented by the following formula (1) is preferably used.
  • R 1 represents a hydrogen atom or an electron donating group.
  • R 1 is preferably electron donating.
  • the first adhesive contains an epoxy resin and a curing agent, and among the compounds having a group represented by the formula (1), R 1 is an electron donating group.
  • the epoxy resin and the curing agent react with each other and the curing reaction proceeds.
  • the carboxylic acid as the flux compound is taken into the curing reaction. That is, an ester bond may be formed by the reaction between the epoxy group of the epoxy resin and the carboxyl group of the flux compound. This ester bond is likely to cause hydrolysis due to moisture absorption or the like, and this decomposition of the ester bond is considered to be a cause of a decrease in adhesive strength after moisture absorption.
  • a compound having a group in which R 1 is an electron donating group that is, a compound having a carboxyl group having an electron donating group nearby.
  • the carboxyl group can provide sufficient flux activity, and even when the above-mentioned ester bond is formed, the electron-donating group increases the electron density of the ester bond and suppresses the decomposition of the ester bond. Is done.
  • a substituent (electron-donating group) exists in the vicinity of the carboxyl group, it is considered that the reaction between the carboxyl group and the epoxy resin is suppressed due to steric hindrance, and it is difficult to generate an ester bond.
  • the first adhesive further containing a compound in which R 1 is an electron donating group when used, a composition change occurs due to moisture absorption or the like. Difficult to maintain excellent adhesion.
  • the above-described action is such that the curing reaction between the epoxy resin and the curing agent is not easily inhibited by the flux compound, and due to this action, the connection reliability due to sufficient progress of the curing reaction between the epoxy resin and the curing agent. The effect of improvement can also be expected.
  • the electron donating group When the electron donating property of the electron donating group becomes strong, the effect of suppressing the decomposition of the ester bond tends to be easily obtained. Moreover, when the steric hindrance of the electron donating group is large, an effect of suppressing the reaction between the carboxyl group and the epoxy resin is easily obtained.
  • the electron donating group preferably has a good balance of electron donating properties and steric hindrance.
  • the electron donating group examples include an alkyl group, a hydroxyl group, an amino group, an alkoxy group, and an alkylamino group.
  • the electron donating group is preferably a group that does not easily react with other components (for example, the epoxy resin of component (a)). Specifically, an alkyl group, a hydroxyl group, or an alkoxy group is preferable, and an alkyl group is more preferable.
  • an alkyl group having 1 to 10 carbon atoms is preferable, and an alkyl group having 1 to 5 carbon atoms is more preferable.
  • the carbon number of the alkyl group increases, the electron donating property and steric hindrance tend to increase. Since the alkyl group having the carbon number in the above range is excellent in the balance between electron donating property and steric hindrance, the effect of the present invention is more remarkably exhibited by the alkyl group.
  • the alkyl group may be linear or branched, and is preferably linear.
  • the number of carbon atoms of the alkyl group is preferably not more than the number of carbon atoms in the main chain of the flux compound from the viewpoint of the balance between electron donating properties and steric hindrance.
  • the flux compound is a compound represented by the following formula (2) and the electron donating group is a linear alkyl group
  • the carbon number of the alkyl group is the carbon number of the main chain of the flux compound ( n + 1) or less.
  • an alkoxy group having 1 to 10 carbon atoms is preferable, and an alkoxy group having 1 to 5 carbon atoms is more preferable.
  • an alkoxy group having 1 to 5 carbon atoms is more preferable.
  • An alkoxy group having a carbon number in the above range is excellent in the balance between electron donating property and steric hindrance, and therefore the effect of the present invention is more remarkably exhibited by the alkoxy group.
  • the alkyl group portion of the alkoxy group may be linear or branched, and is preferably linear.
  • the number of carbon atoms of the alkoxy group is preferably not more than the number of carbon atoms in the main chain of the flux compound from the viewpoint of the balance between electron donating properties and steric hindrance.
  • the flux compound is a compound represented by the following formula (2) and the electron donating group is a linear alkoxy group
  • the number of carbon atoms in the alkoxy group is the number of carbon atoms in the main chain of the flux compound ( n + 1) or less.
  • alkylamino group examples include a monoalkylamino group and a dialkylamino group.
  • a monoalkylamino group having 1 to 10 carbon atoms is preferable, and a monoalkylamino group having 1 to 5 carbon atoms is more preferable.
  • the alkyl group portion of the monoalkylamino group may be linear or branched, and is preferably linear.
  • dialkylamino group a dialkylamino group having 2 to 20 carbon atoms is preferable, and a dialkylamino group having 2 to 10 carbon atoms is more preferable.
  • the alkyl group portion of the dialkylamino group may be linear or branched, and is preferably linear.
  • a compound represented by the following formula (2) can be suitably used. According to the compound represented by the following formula (2), the reflow resistance and connection reliability of the semiconductor device can be further improved.
  • R 1 and R 2 each independently represent a hydrogen atom or an electron donating group, and n represents 0 or an integer of 1 or more.
  • a plurality of R 2 may be the same or different.
  • R 1 has the same meaning as in formula (1). Further, the electron donating property represented by R 2 is the same as the above-described example of the electron donating group described as R 1 . For the same reason as described in the formula (1), R 1 in the formula (2) is preferably an electron donating group.
  • N in Formula (2) is preferably 1 or more.
  • n in the formula (2) is preferably 15 or less, more preferably 11 or less, and may be 6 or less or 4 or less. When n is 15 or less, further excellent connection reliability can be obtained.
  • a compound represented by the following formula (3) is more preferable. According to the compound represented by the following formula (3), the reflow resistance and connection reliability of the semiconductor device can be further improved.
  • R 1 and R 2 each independently represent a hydrogen atom or an electron donating group, and m represents 0 or an integer of 1 or more.
  • M in Formula (3) is preferably 10 or less, more preferably 5 or less, and even more preferably 3 or less. When m is 10 or less, further excellent connection reliability can be obtained.
  • R 1 and R 2 may be a hydrogen atom or an electron donating group. From the viewpoint of obtaining better connection reliability, it is preferable that at least one of R 1 and R 2 is an electron donating group. If R 1 is an electron donating group and R 2 is a hydrogen atom, the melting point tends to be low, and the connection reliability of the semiconductor device may be further improved. Further, if R 1 and R 2 are different electron donating groups, the melting point tends to be lower than that in the case where R 1 and R 2 are the same electron donating group. In some cases, reliability can be further improved.
  • Examples of the flux compound include dicarboxylic acids selected from succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid and dodecanedioic acid, and 2 of these dicarboxylic acids.
  • a compound in which an electron donating group is substituted at the position can be used.
  • the melting point of the flux compound is preferably 150 ° C. or lower, more preferably 140 ° C. or lower, and further preferably 130 ° C. or lower. Such a flux compound is likely to exhibit sufficient flux activity before the curing reaction between the epoxy resin and the curing agent occurs. Therefore, according to the film adhesive for a semiconductor using the first adhesive containing such a flux compound, it is possible to realize a semiconductor device that is further excellent in connection reliability. Further, the melting point of the flux compound is preferably 25 ° C. or higher, and more preferably 50 ° C. or higher. The flux compound is preferably solid at room temperature (25 ° C.).
  • the melting point of the flux compound can be measured using a general melting point measuring apparatus.
  • the sample for measuring the melting point is required to reduce the temperature deviation in the sample by being pulverized into fine powder and using a small amount.
  • a capillary tube with one end closed is often used.
  • some measuring apparatuses are sandwiched between two microscope cover glasses to form a container. If the temperature is rapidly increased, a temperature gradient is generated between the sample and the thermometer, resulting in a measurement error. Therefore, the heating at the time of measuring the melting point can be measured at an increase rate of 1 ° C. or less per minute. desirable.
  • the material for measuring the melting point is prepared as a fine powder, the sample before melting is opaque due to irregular reflection on the surface.
  • the temperature at which the appearance of the sample begins to become transparent is taken as the lower limit of the melting point, and the temperature at which the sample has completely melted is taken as the upper limit.
  • the most classic device is a device in which a capillary tube packed with a sample is attached to a double tube thermometer and heated in a warm bath.
  • a highly viscous liquid is used as the liquid in the warm bath, and concentrated sulfuric acid or silicon oil is often used, so that the sample comes near the reservoir at the tip of the thermometer.
  • the melting point measuring device it is possible to use a device that uses a metal heat block for heating and automatically determines the melting point while adjusting the heating while measuring the light transmittance.
  • the melting point of 150 ° C. or lower means that the upper limit of the melting point is 150 ° C. or lower, and the melting point of 25 ° C. or higher means that the lower limit of the melting point is 25 ° C. or higher. means.
  • the content of the component (c) is preferably 0.5 to 10% by mass and more preferably 0.5 to 5% by mass based on the total amount of the first adhesive.
  • the 1st adhesive agent may contain the high molecular component ((d) component) whose weight average molecular weight is 10,000 or more as needed.
  • the first adhesive containing the component (d) is further excellent in heat resistance and film formability.
  • the component (d) examples include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane. Resin and acrylic rubber are mentioned. Among these, from the viewpoint of excellent heat resistance and film formability, phenoxy resin, polyimide resin, acrylic rubber, cyanate ester resin, and polycarbodiimide resin are preferable, and phenoxy resin, polyimide resin, and acrylic rubber are more preferable. These components (d) can be used alone or as a mixture or copolymer of two or more. However, the component (d) does not include a compound corresponding to the component (a) and a compound corresponding to the component (e).
  • the weight average molecular weight of the component (d) is, for example, 10,000 or more, preferably 20000 or more, and more preferably 30000 or more. According to such a component (d), the heat resistance and film formability of the first adhesive can be further improved.
  • the weight average molecular weight of the component (d) is preferably 1000000 or less, and more preferably 500000 or less. According to such a component (d), the heat resistance of the first adhesive can be further improved.
  • the weight average molecular weight means a weight average molecular weight when measured in terms of polystyrene using high performance liquid chromatography (manufactured by Shimadzu Corporation, trade name: C-R4A).
  • C-R4A high performance liquid chromatography
  • the ratio C a / C d (mass ratio) of the content C a of the component (a) to the content C d of the component (d) is 0.01. Is preferably 5 to 5, more preferably 0.05 to 3, and still more preferably 0.1 to 2.
  • the first adhesive may contain a filler (component (e)) as necessary.
  • a filler component (e)
  • the viscosity of the first adhesive, the physical properties of the cured product of the first adhesive, and the like can be controlled.
  • the component (e) for example, it is possible to suppress the generation of voids at the time of connection and to reduce the moisture absorption rate of the cured product of the first adhesive.
  • an inorganic filler inorganic particle
  • an organic filler organic particle
  • the inorganic filler include insulating inorganic fillers such as glass, silica, alumina, titanium oxide, mica, and boron nitride. Among them, at least one selected from the group consisting of silica, alumina, titanium oxide, and boron nitride is included. Preferably, at least one selected from the group consisting of silica, alumina, and boron nitride is more preferable.
  • the insulating inorganic filler may be a whisker.
  • whiskers examples include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, and boron nitride.
  • a resin filler resin particle
  • the resin filler include polyurethane and polyimide.
  • the resin filler can give flexibility at a high temperature such as 260 ° C. as compared with the inorganic filler, so that it is suitable for improving reflow resistance and can be given flexibility, so that it can improve film formability. effective.
  • the component (e) is preferably insulative. It is preferable that the first adhesive does not contain a conductive metal filler (metal particles) such as a silver filler and a solder filler, and a conductive inorganic filler such as carbon black.
  • a conductive metal filler metal particles
  • a conductive inorganic filler such as carbon black
  • the physical properties of the component may be appropriately adjusted by surface treatment.
  • the component (e) is preferably a surface-treated filler from the viewpoint of improving dispersibility or adhesive strength.
  • the surface treatment agent include glycidyl (epoxy), amine, phenyl, phenylamino, (meth) acrylic, and vinyl compounds.
  • a silane treatment with a silane compound such as an epoxy silane, amino silane, or acrylic silane is preferable because of easy surface treatment.
  • the surface treating agent is preferably at least one selected from the group consisting of a glycidyl compound, a phenylamino compound, and a (meth) acrylic compound from the viewpoint of excellent dispersibility, fluidity, and adhesive strength.
  • the surface treatment agent is preferably at least one selected from the group consisting of phenyl compounds and (meth) acrylic compounds from the viewpoint of excellent storage stability.
  • the average particle size of the component (e) is preferably 1.5 ⁇ m or less from the viewpoint of preventing biting during flip chip connection, and more preferably 1.0 ⁇ m or less from the viewpoint of excellent visibility (transparency).
  • the content of the component (e) is the first adhesive from the viewpoint of suppressing the heat dissipation from being lowered, and from the viewpoint of easily suppressing the generation of voids, an increase in the moisture absorption rate, and the like. 30 mass% or more is preferable and 40 mass% or more is more preferable based on the total amount.
  • the content of the component (e) is easily suppressed from increasing the viscosity and reducing the fluidity of the first adhesive and causing the filler to bite into the connecting portion (trapping). From the viewpoint of tending to suppress the deterioration of the properties, 90% by mass or less is preferable and 80% by mass or less is more preferable on the basis of the total amount of the first adhesive. From these viewpoints, the content of the component (e) is preferably 30 to 90% by mass, more preferably 40 to 80% by mass, based on the total amount of the first adhesive.
  • blend additives such as antioxidant, a silane coupling agent, a titanium coupling agent, a leveling agent, and an ion trap agent, with a 1st adhesive agent.
  • additives such as antioxidant, a silane coupling agent, a titanium coupling agent, a leveling agent, and an ion trap agent, with a 1st adhesive agent.
  • the second adhesive does not substantially contain a flux compound. “Substantially not containing” means that the content of the flux compound in the second adhesive is less than 0.5% by mass based on the total amount of the second adhesive.
  • the second adhesive preferably has a curing reaction rate of 80% or more when held at 200 ° C. for 5 seconds from the viewpoint that the effects of the present invention are remarkably obtained.
  • Examples of such a second adhesive include radical curing adhesives. The reason why the effect of the present invention is remarkably obtained by such an adhesive is not clear, but the present inventors presume as follows.
  • the flux component deactivates radicals, and thus a radical curing system cannot be applied, and a cationic curing system using epoxy or the like is applied.
  • this curing system reaction system
  • curing proceeds by a nucleophilic addition reaction, so the curing rate is slow, and voids may occur after pressure bonding.
  • defects for example, peeling of the semiconductor material at a reflow temperature of around 260 ° C., poor connection at the connection portion, etc.
  • the curing system can be a radical curing system, and a sufficient curing rate can be obtained. Therefore, it is presumed that by using the above-mentioned second adhesive for the second layer, voids are hardly generated even when the pressure bonding is performed at a high temperature and in a short time, and the effect of the present invention becomes remarkable.
  • a sufficient curing speed can be obtained, for example, even when solder is used for the connection portion, the film adhesive is cured in a temperature region lower than the solder melting temperature. Can be made. Therefore, it is possible to sufficiently suppress the occurrence of poor connection due to solder scattering and flow.
  • the second adhesive is necessary to be a radical polymerizable compound (hereinafter sometimes referred to as “component (A)”) and a thermal radical generator (hereinafter sometimes referred to as “component (B)”). Accordingly, an embodiment containing a polymer component (hereinafter sometimes referred to as “component (C)”) and a filler (hereinafter sometimes referred to as “component (D)”) will be described.
  • component (A) a radical polymerizable compound
  • component (B) thermal radical generator
  • component (C) polymer component
  • component (D) filler
  • the component (A) is a compound that can undergo a radical polymerization reaction with generation of radicals by heat, light, radiation, electrochemical action, and the like.
  • Examples of the component (A) include (meth) acrylic compounds and vinyl compounds.
  • a (meth) acrylic compound is preferable from the viewpoint of excellent durability, electrical insulation, and heat resistance.
  • the (meth) acrylic compound is not particularly limited as long as it is a compound having one or more (meth) acrylic groups ((meth) acryloyl groups) in the molecule.
  • bisphenol A type bisphenol F type, naphthalene type, (Meth) acrylic compounds containing a skeleton of phenol novolac type, cresol novolak type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type, fluorene type, adamantane type or isocyanuric acid type; ) Acrylic compounds (excluding (meth) acrylic compounds containing the skeleton) can be used.
  • polyfunctional (meth) acrylic compound examples include pentaerythritol tri (meth) acrylate, dipentaerythritol penta (meth) acrylate, and trimethylolpropane di (meth) acrylate.
  • a component can be used individually by 1 type or in combination of 2 or more types.
  • the component (A) preferably has a bisphenol A skeleton, a bisphenol F skeleton, a naphthalene skeleton, a fluorene skeleton, an adamantane skeleton, or an isocyanuric acid skeleton, and has a fluorene skeleton from the viewpoint of excellent heat resistance. It is more preferable.
  • the component (A) is more preferably a (meth) acrylate having any of the skeletons described above.
  • the component (A) is preferably solid at room temperature (25 ° C.).
  • the solid is less likely to generate voids than the liquid, and the viscosity (tack) of the second adhesive before curing (B stage) is small and excellent in handleability.
  • Examples of the component (A) that is solid at room temperature (25 ° C.) include (meth) acrylates having a bisphenol A skeleton, a fluorene skeleton, an adamantane skeleton, or an isocyanuric acid skeleton.
  • the number of functional groups of the (meth) acryl group in the component (A) is preferably 3 or less.
  • the number of functional groups is large, the curing network proceeds rapidly, and unreacted groups may remain.
  • the number of functional groups is 3 or less, the number of functional groups does not increase too much, and curing in a short time is likely to proceed sufficiently, so that it is easy to suppress a decrease in the curing reaction rate.
  • the molecular weight of the component (A) is preferably smaller than 2000, and more preferably 1000 or less. The smaller the molecular weight of the component (A), the easier the reaction proceeds and the higher the curing reaction rate.
  • the content of the component (A) is such that the amount of the curing component is suppressed, and from the viewpoint of easily controlling the flow of the resin after curing, the content of the component is 10% by mass or more based on the total amount of the second adhesive. Preferably, 15 mass% or more is more preferable.
  • the content of the component (A) is 50 masses based on the total amount of the second adhesive from the viewpoint that the cured product is suppressed from becoming too hard and the package warpage tends to be suppressed. % Or less is preferable, and 40% by mass or less is more preferable. From these viewpoints, the content of the component (A) is preferably 10 to 50% by mass, more preferably 15 to 40% by mass based on the total amount of the second adhesive.
  • the content of the component (A) is 0.01 parts by mass or more with respect to 1 part by mass of the component (C) from the viewpoint that curability is suppressed from being lowered and adhesive strength is easily suppressed from being reduced.
  • 0.05 mass part or more is more preferable, and 0.1 mass part or more is still more preferable.
  • the content of the component (A) is preferably 10 parts by mass or less, and more preferably 5 parts by mass or less with respect to 1 part by mass of the component (C), from the viewpoint that the film formability is likely to be suppressed. From these viewpoints, the content of the component (A) is preferably 0.01 to 10 parts by weight, more preferably 0.05 to 5 parts by weight, with respect to 1 part by weight of the component (C). 5 parts by mass is more preferable.
  • the component (B) is not particularly limited as long as it functions as a curing agent for the component (A), but a thermal radical generator is preferable from the viewpoint of excellent handleability.
  • thermal radical generator examples include azo compounds and peroxides (organic peroxides etc.).
  • a peroxide is preferable, and an organic peroxide is more preferable.
  • the radical reaction does not proceed in the step of drying the solvent in the film form, and the handleability and storage stability are excellent. Therefore, when using a peroxide as a thermal radical generator, it is easy to obtain better connection reliability.
  • the organic peroxide include ketone peroxide, peroxyketal, hydroperoxide, dialkyl peroxide, diacyl peroxide, peroxydicarbonate, and peroxyester.
  • the organic peroxide is preferably at least one selected from the group consisting of hydroperoxide, dialkyl peroxide and peroxyester from the viewpoint of excellent storage stability. Further, the organic peroxide is preferably at least one selected from the group consisting of hydroperoxide and dialkyl peroxide from the viewpoint of excellent heat resistance. Examples of the dialkyl peroxide include dicumyl peroxide and di-tert-butyl peroxide.
  • the content of the component (B) is preferably 0.5 parts by mass or more and more preferably 1 part by mass or more with respect to 100 parts by mass of the component (A), from the viewpoint that curing can sufficiently proceed.
  • the content of the component (B) is preferably 10 parts by mass or less and more preferably 5 parts by mass or less with respect to 100 parts by mass of the component (A).
  • the content of the component (B) is preferably 0.5 to 10 parts by mass and more preferably 1 to 5 parts by mass with respect to 100 parts by mass of the component (A).
  • the second adhesive can further contain a polymer component.
  • Component (C) is epoxy resin, phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, (meth) acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal Resins, urethane resins, acrylic rubbers and the like are mentioned. Among them, epoxy resins, phenoxy resins, polyimide resins, (meth) acrylic resins, acrylic rubbers, cyanate ester resins, and polycarbodiimides from the viewpoint of excellent heat resistance and film formability.
  • At least one selected from the group consisting of resins is preferred, and at least one selected from the group consisting of epoxy resins, phenoxy resins, polyimide resins, (meth) acrylic resins and acrylic rubbers is more preferred.
  • (C) component can also be used as 1 type individually or 2 or more types of mixtures or copolymers. However, the component (C) does not include a compound corresponding to the component (A) and a compound corresponding to the component (D).
  • the glass transition temperature (Tg) of the component (C) is preferably 120 ° C. or less, more preferably 100 ° C. or less, and even more preferably 85 ° C. or less, from the viewpoint of excellent stickability of the film adhesive for semiconductor to a substrate or chip. preferable.
  • Tg glass transition temperature
  • the thickness is within these ranges, bumps formed on the semiconductor chip, electrodes and wiring patterns formed on the substrate or wiring patterns can be easily embedded with a semiconductor film adhesive (a curing reaction starts). This tends to suppress the occurrence of voids due to the remaining bubbles.
  • Tg means Tg when measured using DSC (manufactured by Perkin Elmer, trade name: DSC-7 type) under the conditions of a sample amount of 10 mg, a heating rate of 10 ° C./min, and a measurement atmosphere: air. It is.
  • the weight average molecular weight of the component (C) is preferably 10,000 or more in terms of polystyrene, more preferably 30000 or more, even more preferably 40000 or more, and particularly preferably 50000 or more in order to exhibit good film-formability independently.
  • the weight average molecular weight is 10,000 or more, there is a tendency to easily suppress a decrease in film formability.
  • the second adhesive is used to control the viscosity or the physical properties of the cured product, and to further suppress the generation of voids or the moisture absorption rate when the semiconductor chip and the substrate or the semiconductor chips are connected to each other. Furthermore, you may contain.
  • (D) As a component the filler similar to the filler quoted as (d) component in a 1st adhesive agent can be used. The example of a preferable filler is also the same.
  • the content of the component (D) is that the second adhesive has a tendency to suppress the decrease in heat dissipation, and tends to suppress generation of voids, an increase in moisture absorption, and the like. 30 mass% or more is preferable and 40 mass% or more is more preferable based on the total amount.
  • the content of the component (D) is easily suppressed from increasing the viscosity and reducing the fluidity of the second adhesive and causing the filler to be trapped (trapping). From the viewpoint of tending to suppress the deterioration of the properties, 90% by mass or less is preferable and 80% by mass or less is more preferable on the basis of the total amount of the second adhesive. From these viewpoints, the content of the component (D) is preferably 30 to 90% by mass, more preferably 40 to 80% by mass, based on the total amount of the second adhesive.
  • the curing reaction rate when the second adhesive is held at 200 ° C. for 5 seconds is preferably 80% or more, and more preferably 90% or more. If the curing reaction rate at 200 ° C. (solder melting temperature or lower) / 5 seconds is 80% or higher, it is easy to suppress the solder from scattering and flowing during connection (solder melting temperature or higher) and lowering the connection reliability. Curing reaction rate was measured by using DSC (trade name: DSC-7, manufactured by Perkin Elmer Co., Ltd.) after putting 10 mg of the second adhesive (uncured flux-free layer) in an aluminum pan. Can be obtained.
  • DSC trade name: DSC-7, manufactured by Perkin Elmer Co., Ltd.
  • Curing reaction rate (%) (1 ⁇ [calorific value of measurement sample after heat treatment] / [calorific value of untreated measurement sample]) ⁇ 100
  • the second resin contains an anionically polymerizable epoxy resin (particularly an epoxy resin having a weight average molecular weight of 10,000 or more), it may be difficult to adjust the curing reaction rate to 80% or more. It is preferable that content of an epoxy resin is 20 mass parts or less with respect to 80 mass parts of (A) component, and it is more preferable that the epoxy resin is not contained.
  • the second layer (flux-free layer) made of the second adhesive can be pressure-bonded at a high temperature of 200 ° C. or higher. Further, a flip chip package in which a metal such as solder is melted to form a connection exhibits further excellent curability.
  • the thickness of the film-like adhesive for semiconductors of this embodiment when the sum of the heights of the connecting portions is x and the total thickness of the film-like adhesive for semiconductors is y, the relationship between x and y is From the viewpoints of connectivity during pressure bonding and adhesive filling properties, 0.70x ⁇ y ⁇ 1.3x is preferably satisfied, and 0.80x ⁇ y ⁇ 1.2x is more preferable.
  • the total thickness of the film-like adhesive for semiconductor is, for example, 10 to 100 ⁇ m, 10 to 80 ⁇ m, or 10 to 50 ⁇ m.
  • the thickness of the first layer may be, for example, 1 to 50 ⁇ m, 3 to 50 ⁇ m, 4 to 30 ⁇ m, or 5 to 20 ⁇ m.
  • the thickness of the second layer may be, for example, 7 to 50 ⁇ m, 8 to 45 ⁇ m, or 10 to 40 ⁇ m.
  • the ratio of the thickness of the second layer to the thickness of the first layer may be, for example, 0.1 to 10.0, It may be 0.5 to 6.0 and may be 1.0 to 4.0.
  • the film-like adhesive for semiconductors of this embodiment may further comprise other layers other than the first layer and the second layer, but preferably comprises only the first layer and the second layer.
  • the film-like adhesive for a semiconductor of the present embodiment is on the surface of the first layer opposite to the second layer and / or the surface of the second layer opposite to the first layer.
  • a base film and / or a protective film may be provided thereon.
  • the film adhesive for semiconductors of this embodiment prepares the 1st film adhesive provided with the 1st layer, and the 2nd film adhesive provided with the 2nd layer, for example. It can be obtained by laminating a first film adhesive having a layer and a second film adhesive having a second layer.
  • first film adhesive for example, first, (a) component, (b) component and (c) component, and (d) component and (e) component added as necessary
  • the other components are added to an organic solvent and dissolved or dispersed by stirring, mixing, kneading or the like to prepare a resin varnish (coating varnish).
  • the organic solvent is reduced by heating, and the first adhesion onto the base film is performed.
  • a first layer made of an agent can be formed.
  • organic solvent used for preparing the resin varnish those having characteristics capable of uniformly dissolving or dispersing each component are preferable.
  • dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether examples include toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate.
  • These organic solvents can be used alone or in combination of two or more.
  • the stirring and mixing and kneading in preparing the resin varnish can be performed using, for example, a stirrer, a raking machine, a three roll, a ball mill, a bead mill or a homodisper.
  • the base film is not particularly limited as long as it has heat resistance capable of withstanding the heating conditions when the organic solvent is volatilized.
  • Polyolefin film such as polypropylene film and polymethylpentene film, polyethylene terephthalate film, polyethylene naphthalate Examples thereof include polyester films such as films, polyimide films, and polyetherimide films.
  • the base film is not limited to a single layer made of these films, and may be a multilayer film made of two or more materials.
  • the drying conditions when the organic solvent is volatilized from the resin varnish applied to the base film is preferably set so that the organic solvent is sufficiently volatilized, specifically, 50 to 200 ° C. for 0.1 to 90 minutes. It is preferable to perform heating. If there is no influence on the void or viscosity adjustment after mounting, the organic solvent is preferably removed to 1.5% by mass or less based on the total amount of the first film adhesive.
  • the first layer is used except that other components such as the (A) component and the (B) component and the (C) component added as necessary are used.
  • the 2nd layer which consists of a 2nd adhesive agent can be formed on a base film by the method similar to.
  • Examples of the method of bonding the first film adhesive and the second film adhesive include methods such as a heat press, roll lamination, and vacuum lamination. Lamination may be performed under heating conditions of 30 to 120 ° C., for example.
  • the film-like adhesive for semiconductor of the present embodiment forms one of the first layer and the second layer on the base film, and then, on the obtained first layer or second layer, It may be obtained by forming the other of the first layer or the second layer.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention.
  • a semiconductor device 100 includes a semiconductor chip 10 and a substrate (circuit wiring board) 20 that face each other, and wirings 15 that are respectively disposed on mutually facing surfaces of the semiconductor chip 10 and the substrate 20.
  • the semiconductor chip 10 and the substrate 20 are flip-chip connected by wiring 15 and connection bumps 30.
  • the wiring 15 and the connection bump 30 are sealed with a hardened material of an adhesive and are shielded from the external environment.
  • the sealing part 40 has an upper part 40a containing a cured product of the first adhesive and a lower part 40b containing a cured product of the second adhesive.
  • the semiconductor device 200 includes a semiconductor chip 10 and a substrate 20 that face each other, a bump 32 that is disposed on a surface that faces the semiconductor chip 10 and the substrate 20, respectively, And a sealing portion 40 made of a cured product of an adhesive (first adhesive and second adhesive) filled in the gap between the substrates 20 without a gap.
  • the semiconductor chip 10 and the substrate 20 are flip-chip connected by connecting opposing bumps 32 to each other.
  • the bumps 32 are sealed with a hardened material of an adhesive and are shielded from the external environment.
  • the sealing part 40 has an upper part 40a containing a cured product of the first adhesive and a lower part 40b containing a cured product of the second adhesive.
  • FIG. 2 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention.
  • the semiconductor device 300 is the same as the semiconductor device 100 except that two semiconductor chips 10 are flip-chip connected by wirings 15 and connection bumps 30.
  • the semiconductor device 400 is the same as the semiconductor device 200 except that the two semiconductor chips 10 are flip-chip connected by the bumps 32.
  • the semiconductor chip 10 is not particularly limited, and an elemental semiconductor composed of the same kind of element such as silicon or germanium, or a compound semiconductor such as gallium arsenide or indium phosphide can be used.
  • the substrate 20 is not particularly limited as long as it is a circuit board, and an unnecessary portion of a metal film is etched on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine, or the like.
  • connection parts such as the wiring 15 and the bumps 32 have as main components gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.) ), Nickel, tin, lead, etc., and may contain a plurality of metals.
  • gold, silver, and copper are preferable, and silver and copper are more preferable from the viewpoint of providing a package with excellent electrical and thermal conductivity of the connection portion.
  • silver, copper, and solder which are inexpensive materials, are preferable, copper and solder are more preferable, and solder is more preferable.
  • solder is more preferable.
  • gold, silver, copper and solder are preferable, and gold, silver Solder is more preferable, and gold and silver are more preferable.
  • the surface of the wiring 15 and the bump 32 is mainly made of gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc.
  • the metal layer as a component may be formed by plating, for example. This metal layer may be composed of only a single component or may be composed of a plurality of components.
  • the metal layer may have a structure in which a single layer or a plurality of metal layers are stacked.
  • the semiconductor device of this embodiment may be formed by stacking a plurality of structures (packages) as shown in the semiconductor devices 100 to 400.
  • the semiconductor devices 100 to 400 include gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper), tin, nickel. May be electrically connected to each other through bumps, wirings, and the like.
  • FIG. 3 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention, which is a semiconductor device using the TSV technology.
  • the wiring 15 formed on the interposer 50 is connected to the wiring 15 of the semiconductor chip 10 via the connection bumps 30, so that the semiconductor chip 10 and the interposer 50 are flip-chip connected.
  • the gap between the semiconductor chip 10 and the interposer 50 is filled with a cured product of an adhesive (first adhesive and second adhesive) without any gaps, and constitutes the sealing portion 40.
  • the semiconductor chip 10 On the surface of the semiconductor chip 10 opposite to the interposer 50, the semiconductor chip 10 is repeatedly stacked via the wiring 15, the connection bumps 30, and the sealing portion 40.
  • the wirings 15 on the pattern surface on the front and back sides of the semiconductor chip 10 are connected to each other by through electrodes 34 filled in holes that penetrate the inside of the semiconductor chip 10.
  • the penetration electrode 34 copper, aluminum, etc. can be used as a material of the penetration electrode 34.
  • Such a TSV technology makes it possible to acquire a signal from the back surface of a semiconductor chip that is not normally used. Furthermore, since the through electrode 34 passes vertically through the semiconductor chip 10, the distance between the semiconductor chips 10 facing each other and between the semiconductor chip 10 and the interposer 50 can be shortened and flexible connection is possible.
  • the film adhesive for semiconductor of this embodiment can be applied as a film adhesive for semiconductor between the semiconductor chips 10 facing each other and between the semiconductor chip 10 and the interposer 50 in such a TSV technology.
  • a semiconductor chip can be directly mounted on a motherboard without using an interposer.
  • the film adhesive for semiconductor of this embodiment can also be applied when such a semiconductor chip is directly mounted on a mother board.
  • the film adhesive for semiconductors of this embodiment can be applied also when sealing the space
  • FIG. 4 is a diagram schematically showing one embodiment of a method for manufacturing a semiconductor device of the present invention.
  • FIGS. 4A, 4B, and 4C showing the respective steps are semiconductor devices. The cross section of is shown.
  • solder resist 60 having openings at positions where connection bumps 30 are formed is formed on a substrate 20 having wirings 15.
  • the solder resist 60 is not necessarily provided. However, by providing a solder resist on the substrate 20, it is possible to suppress the occurrence of a bridge between the wirings 15 and improve the connection reliability and insulation reliability.
  • the solder resist 60 can be formed using, for example, commercially available solder resist ink for packages. Specific examples of commercially available solder resist inks for packaging include the SR series (trade name, manufactured by Hitachi Chemical Co., Ltd.) and the PSR4000-AUS series (trade name, manufactured by Taiyo Ink Manufacturing Co., Ltd.).
  • connection bumps 30 are formed in the openings of the solder resist 60.
  • the surface on the second layer 41b side including the second adhesive is on the substrate 20 side on the substrate 20 on which the connection bumps 30 and the solder resist 60 are formed.
  • a film-like adhesive for semiconductors of the present embodiment (hereinafter sometimes referred to as “film-like adhesive”) 41 is affixed.
  • the film adhesive 41 can be attached by a hot press, roll lamination, vacuum lamination, or the like.
  • the supply area and thickness of the film adhesive 41 are appropriately set depending on the size of the semiconductor chip 10 and the substrate 20, the height of the connection bump 30, and the like. Note that the film adhesive 41 may be attached so that the surface on the first layer 41a side including the first adhesive is on the substrate 20 side.
  • the wiring 15 and the connection bumps 30 of the semiconductor chip 10 are aligned using a connection device such as a flip chip bonder. Subsequently, the semiconductor chip 10 and the substrate 20 are pressure-bonded while being heated at a temperature equal to or higher than the melting point of the connection bump 30 to connect the semiconductor chip 10 and the substrate 20 as shown in FIG. The gap between the semiconductor chip 10 and the substrate 20 is sealed and filled with a sealing portion 40 made of a cured product of the adhesive 41. Thus, the semiconductor device 600 is obtained.
  • Crimping time may be 5 seconds or less, for example.
  • the film adhesive 41 of the present embodiment described above is used, a semiconductor device having excellent connection reliability can be obtained even when the pressure bonding time is 5 seconds or less.
  • the semiconductor device is temporarily fixed (in a state where the film-like adhesive for semiconductor is interposed), and heat-treated in a reflow furnace to melt the connection bumps 30 so as to form the semiconductor.
  • the chip 10 and the substrate 20 may be connected. Since it is not always necessary to form a metal joint at the temporary fixing stage, it can be crimped with a low load, in a short time, and at a low temperature as compared with the above-mentioned method of crimping while heating. Deterioration of the part can be suppressed.
  • the heating temperature is preferably a temperature at which curing of the film adhesive proceeds, and more preferably a temperature at which the film adhesive is completely cured.
  • the heating temperature and the heating time are appropriately set.
  • the substrate 20 may be connected after the film adhesive 41 is pasted on the semiconductor chip 10.
  • a semiconductor film adhesive is supplied onto a semiconductor wafer to which a plurality of semiconductor chips 10 are connected, and then diced into individual pieces, whereby a semiconductor film adhesive is adhered onto the semiconductor chip 10.
  • productivity is improved, and generation of voids due to insufficient embedding and a decrease in dicing property can be suppressed.
  • connection load is set in consideration of variations in the number and height of the connection bumps 30, the connection bumps 30 due to pressurization, or the amount of deformation of the wiring that receives the bumps in the connection part.
  • the connection temperature is preferably such that the temperature of the connection portion is equal to or higher than the melting point of the connection bump 30, but may be any temperature at which metal connection of each connection portion (bump and wiring) is formed.
  • connection bump 30 is a solder bump, about 240 ° C. or higher is preferable.
  • connection time at the time of connection varies depending on the constituent metal of the connection part, but a shorter time is preferable from the viewpoint of improving productivity.
  • connection time is preferably 20 seconds or less, more preferably 10 seconds or less, and even more preferably 5 seconds or less.
  • connection time is preferably 60 seconds or less.
  • the film-like adhesive for semiconductors of the present embodiment exhibits excellent reflow resistance and connection reliability.
  • An epoxy resin, a curing agent, a flux agent, an inorganic filler, and an organic filler having a blending amount (unit: parts by mass) shown in Table 1 are expressed as NV values ([paint content mass after drying] / [paint content mass before drying] ⁇ 100) was added to an organic solvent (methyl ethyl ketone) so as to be 60%. Thereafter, ⁇ 1.0 mm beads and ⁇ 2.0 mm beads were added in the same mass as the solid content (epoxy resin, curing agent, flux agent, polymer component, inorganic filler and organic filler), and bead mill (Fritsch Japan Co., Ltd., The mixture was stirred for 30 minutes with a planetary pulverizer P-7). After stirring, the beads were removed by filtration to prepare a coating varnish.
  • NV values [paint content mass after drying] / [paint content mass before drying] ⁇ 100
  • the obtained coating varnish is coated on a base film (trade name “Purex A54” manufactured by Teijin DuPont Films Ltd.) with a small precision coating device (Yurui Seiki), and a clean oven (manufactured by ESPEC). ) (80 ° C./10 min) to obtain monolayer films (A-1), (A-2) and (A-3) shown in Table 1.
  • (D) Filler The filler similar to the filler ((d) component) used for preparation of a single layer film provided with a flux content layer was used.
  • the obtained coating varnish is coated on a base film (trade name “Purex A54” manufactured by Teijin DuPont Films Ltd.) with a small precision coating device (Yurui Seiki), and a clean oven (manufactured by ESPEC). ) (80 ° C./10 min) to obtain single layer films (B-1), (B-2), (B-3), (B-4) and (B-5) shown in Table 2. It was.
  • the film-like adhesive produced in the examples or comparative examples was cut out to a predetermined size (length 8 mm ⁇ width 8 mm ⁇ thickness 40 ⁇ m) to produce a sample for evaluation.
  • the sample for evaluation was stuck on a glass epoxy substrate (glass epoxy base material: 420 ⁇ m thickness, copper wiring: 9 ⁇ m thickness), and a semiconductor chip with solder bumps (chip size: vertical 7.3 mm ⁇ horizontal 7.3 mm ⁇ thickness) 0.15 mm, bump height: copper pillar + solder meter about 40 ⁇ m, number of bumps 328) was mounted with flip mounting device “FCB3” (trade name, manufactured by Panasonic) (mounting conditions: pressure head temperature 350 ° C., pressure bonding time 3) Second, pressure bonding pressure 0.5 MPa).
  • Example 1 and 2 were affixed on the glass substrate so that a flux non-containing layer and a glass epoxy substrate may contact
  • connection resistance value of the obtained semiconductor device was measured using a multimeter (trade name “R6871E” manufactured by ADVANTEST).
  • connectivity is “A” (good)
  • connectivity is “B” (defect)
  • connectivity is “C” (defect)
  • solder wettability evaluation Regarding the semiconductor device manufactured by the above method, the cross section of the connection portion is observed, and the case where 90% or more of the solder is wet on the upper surface of the Cu wiring is “A” (good), and the case where the solder is less than 90%. It was evaluated as “B” (insufficient wetness).
  • SYMBOLS 10 Semiconductor chip, 15 ... Wiring (connection part), 20 ... Board
  • Film adhesive 50 ... interposer, 60 ... solder resist, 100, 200, 300, 400, 500, 600 ... semiconductor device.

Abstract

L'adhésif sous forme de film pour semi-conducteur de l'invention est équipé : d'une première couche qui est constituée d'un premier adhésif comprenant un composé de flux ; et d'une seconde couche qui est agencée sur la première couche, et qui est constituée d'un second adhésif ne comprenant pas de manière pratique de composé de flux.
PCT/JP2017/021143 2017-06-07 2017-06-07 Adhésif sous forme de film pour semi-conducteur, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci WO2018225191A1 (fr)

Priority Applications (18)

Application Number Priority Date Filing Date Title
PCT/JP2017/021143 WO2018225191A1 (fr) 2017-06-07 2017-06-07 Adhésif sous forme de film pour semi-conducteur, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci
KR1020197036965A KR102351843B1 (ko) 2017-06-07 2017-06-07 반도체용 필름형 접착제, 반도체 장치의 제조 방법 및 반도체 장치
JP2019523276A JP6958615B2 (ja) 2017-06-07 2017-06-07 半導体用フィルム状接着剤、半導体装置の製造方法及び半導体装置
KR1020227000993A KR102412246B1 (ko) 2017-06-07 2017-06-07 반도체용 필름형 접착제, 반도체 장치의 제조 방법 및 반도체 장치
PCT/JP2018/009996 WO2018225323A1 (fr) 2017-06-07 2018-03-14 Adhésif sous forme de film pour semi-conducteur, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci
JP2019523347A JP7173002B2 (ja) 2017-06-07 2018-03-14 半導体用フィルム状接着剤、半導体装置の製造方法及び半導体装置
KR1020197033477A KR102455211B1 (ko) 2017-06-07 2018-03-14 반도체용 필름형 접착제, 반도체 장치의 제조 방법 및 반도체 장치
KR1020197033478A KR102508048B1 (ko) 2017-06-07 2018-06-06 반도체용 필름형 접착제, 반도체 장치의 제조 방법 및 반도체 장치
PCT/JP2018/021767 WO2018225800A1 (fr) 2017-06-07 2018-06-06 Adhésif sous forme de film pour semi-conducteur et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci
JP2019523953A JP7196839B2 (ja) 2017-06-07 2018-06-06 半導体用フィルム状接着剤、基材付きフィルム状接着剤、半導体用フィルム状接着剤の製造方法、半導体装置の製造方法及び半導体装置
TW112116618A TWI827512B (zh) 2017-06-07 2018-06-07 半導體用膜狀接著劑、半導體裝置的製造方法及半導體裝置
TW110143443A TWI804062B (zh) 2017-06-07 2018-06-07 半導體用膜狀接著劑、半導體裝置的製造方法及半導體裝置
TW107119655A TWI748105B (zh) 2017-06-07 2018-06-07 半導體用膜狀接著劑、半導體裝置的製造方法及半導體裝置
JP2021155359A JP7226498B2 (ja) 2017-06-07 2021-09-24 半導体用フィルム状接着剤、半導体装置の製造方法及び半導体装置
JP2022165348A JP7351393B2 (ja) 2017-06-07 2022-10-14 半導体用フィルム状接着剤、半導体装置の製造方法及び半導体装置
JP2023007401A JP7380926B2 (ja) 2017-06-07 2023-01-20 半導体用フィルム状接着剤、半導体装置の製造方法及び半導体装置
JP2023147054A JP2023164554A (ja) 2017-06-07 2023-09-11 半導体用フィルム状接着剤、半導体装置の製造方法及び半導体装置
JP2023181615A JP2024003019A (ja) 2017-06-07 2023-10-23 半導体用フィルム状接着剤の製造方法

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PCT/JP2017/021143 WO2018225191A1 (fr) 2017-06-07 2017-06-07 Adhésif sous forme de film pour semi-conducteur, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci

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PCT/JP2018/009996 WO2018225323A1 (fr) 2017-06-07 2018-03-14 Adhésif sous forme de film pour semi-conducteur, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci
PCT/JP2018/021767 WO2018225800A1 (fr) 2017-06-07 2018-06-06 Adhésif sous forme de film pour semi-conducteur et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci

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PCT/JP2018/021767 WO2018225800A1 (fr) 2017-06-07 2018-06-06 Adhésif sous forme de film pour semi-conducteur et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci

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