WO2018218936A1 - 像素电路及其驱动方法、显示面板 - Google Patents

像素电路及其驱动方法、显示面板 Download PDF

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Publication number
WO2018218936A1
WO2018218936A1 PCT/CN2017/117178 CN2017117178W WO2018218936A1 WO 2018218936 A1 WO2018218936 A1 WO 2018218936A1 CN 2017117178 W CN2017117178 W CN 2017117178W WO 2018218936 A1 WO2018218936 A1 WO 2018218936A1
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Prior art keywords
circuit
sensing
light
signal
transistor
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PCT/CN2017/117178
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English (en)
French (fr)
Inventor
王鹏鹏
董学
王海生
丁小梁
刘英明
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京东方科技集团股份有限公司
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Priority to US16/070,927 priority Critical patent/US10810936B2/en
Publication of WO2018218936A1 publication Critical patent/WO2018218936A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G09G3/3241—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/1365—Matching; Classification
    • G06V40/1376—Matching features related to ridge properties or fingerprint texture
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/1341—Sensing with light passing through the finger
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/029—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2354/00—Aspects of interface with display user

Definitions

  • Embodiments of the present disclosure relate to a pixel circuit and a driving method thereof, and a display panel.
  • OLED display panels have attracted widespread attention due to their advantages of wide viewing angle, high contrast ratio, fast response, high luminance, low driving voltage and flexible display.
  • OLED display panels are widely used in electronic products such as mobile phones, computers, full-color TVs, digital video cameras, and personal digital assistants.
  • At least one embodiment of the present disclosure provides a pixel circuit including: a light emitting element, an illumination control circuit, and a photo sensing circuit.
  • the illumination control circuit is configured to drive the light emitting element to emit light and includes a first end, a second end, and a third end, the first end for connecting to a first power end, and the second end for The light emitting element is connected; one end of the light emitting element is connected to the second end of the light emitting control circuit, and the other end is connected to the second power end; the photoelectric sensing circuit is configured to sense incident And the sensing voltage input end is configured to be connected to the second power end, and the sensing signal output end is configured to be connected to the light emitting control circuit Three-terminal connection.
  • At least one embodiment of the present disclosure also provides a display panel including an array of pixel units. At least one of the pixel units includes the pixel circuit of any of the above.
  • At least one embodiment of the present disclosure further provides a driving method of a pixel circuit according to any one of the above, comprising: in a display stage, the light emission control circuit drives the light emitting element to emit light; in the photoelectric sensing stage, from the The third end of the illumination control circuit outputs a predetermined current to the photo-sensing circuit, and then reads an output signal of the photo-sensing circuit.
  • FIG. 1 is a schematic diagram of a planar circuit of an optical fingerprint recognition device
  • 2a is a schematic block diagram of a pixel circuit according to an embodiment of the present disclosure
  • 2b is a schematic circuit diagram of a pixel circuit according to an embodiment of the present disclosure.
  • 2c is a schematic circuit diagram of still another pixel circuit according to an embodiment of the present disclosure.
  • 3a is a schematic circuit diagram of a photoelectric sensing circuit according to an embodiment of the present disclosure
  • FIG. 3b is a schematic circuit diagram of still another photoelectric sensing circuit according to an embodiment of the present disclosure.
  • FIG. 4a is a schematic circuit diagram of an illumination control circuit according to an embodiment of the present disclosure.
  • FIG. 4b is a schematic circuit diagram of still another illumination control circuit according to an embodiment of the present disclosure.
  • 5a-5d are operational flow of the compensation method of the illumination control circuit shown in FIG. 4b;
  • FIG. 6 is a schematic plan view of a display panel according to an embodiment of the present disclosure.
  • 6b is a schematic block diagram of a pixel unit of a display panel according to an embodiment of the present disclosure
  • FIG. 7 is a cross-sectional structural diagram of a pixel unit of a display panel according to an embodiment of the present disclosure.
  • FIG. 8 is a flowchart of a driving method of a pixel circuit according to an embodiment of the present disclosure
  • FIG. 9 is a schematic circuit diagram of still another pixel circuit according to an embodiment of the present disclosure.
  • Fig. 9b is an exemplary timing chart of the driving method of the pixel circuit shown in Fig. 9a.
  • Fingerprint recognition technologies mainly include capacitive, ultrasonic, and optical technologies.
  • the optical fingerprint recognition technology uses optical detection to detect and recognize the electrical signal obtained by the conversion of the optical signal, and has the advantages of high sensitivity, good stability, long service life and long distance sensing.
  • the organic light emitting diode display panel having the fingerprint recognition function can adopt, for example, an optical fingerprint recognition technology.
  • Figure 1 shows a schematic diagram of a planar circuit of an optical fingerprinting device.
  • the optical fingerprinting device includes a plurality of scanning lines, a plurality of reading lines, and a plurality of photo sensing circuits 9 arranged in an array, each of the photo sensing circuits 9 being located in one sub-pixel.
  • the photoelectric sensing circuit 9 employs a passive detection method.
  • each of the photo-sensing circuits 9 includes a photodiode 90 for converting an optical signal into a sensing electrical signal, and an output transistor 91 for controlling the output of the sensing electrical signal generated by the photodiode 90. To the read line.
  • One end of the photodiode 90 is connected to the power supply voltage terminal Vd, and the other end is connected to the first pole of the output transistor 91; the control electrode of the output transistor 91 is connected to a scan line to receive the scan control signal, and the second pole of the output transistor 91 is A read line connection.
  • the specific process of fingerprint recognition may be: in the light accumulation stage, the light source is irradiated onto the finger, the finger reflects the incident light, the reflected light is irradiated onto the photodiode 90, and the photodiode 90 converts the light signal of the reflected light.
  • the read line can sequentially read out the sensing electrical signals generated by the respective photodiodes 90, and by detecting the size of each sensing electrical signal, the detection of the fingerprint valley can be realized, thereby realizing fingerprint recognition.
  • the passive photoelectric sensing circuit 9 Since the sensing electrical signal generated by the photodiode 90 is small, the passive photoelectric sensing circuit 9 has limited detection capability, high detection difficulty, low accuracy of the detected sensing electrical signal, and low signal to noise ratio.
  • the read line is connected to a column of photodiodes 90 such that the sensed electrical signals output by all the photodiodes 90 of each column interfere with each other, affecting the detection accuracy.
  • the pixel circuit includes a light emitting element, a light emitting control circuit, and a photoelectric sensing circuit.
  • the illumination control circuit is configured to drive the light emitting element to emit light and includes a first end, a second end and a third end, the first end of which is for connecting with the first power end, and the second end of the second end for connecting with the light emitting element; One end is connected to the second end of the illumination control circuit, and the other end is connected to the second power end;
  • the photo sensing circuit is configured to sense the light incident thereon and includes the sensing signal output end and the induced voltage access
  • the sensing voltage access terminal is configured to be coupled to the second power terminal, and the sensing signal output terminal is configured to be coupled to the third terminal of the lighting control circuit.
  • the photoelectric sensing circuit in the pixel circuit adopts an active detection method, and time-multiplexes the constant current generated by the illumination control circuit, thereby realizing high-precision sensing electrical signal detection and improving sensing power.
  • the signal-to-noise ratio of the signal in addition, at least one embodiment of the present disclosure can simultaneously reduce the space occupied by the photo-sensing circuit, optimize the structural layout of the pixel circuit, save manufacturing costs, and increase the added value of the product.
  • the transistor can be divided into an N-type transistor and a P-type transistor.
  • the embodiment of the present disclosure elaborates the technical solution of the present disclosure by taking a transistor as a P-type transistor as an example, but the implementation of the present disclosure.
  • the transistor of the example is not limited to a P-type transistor, and those skilled in the art can also implement the function of one or more transistors in the embodiments in the present disclosure by using an N-type transistor according to actual needs.
  • the transistor used in the embodiment of the present disclosure may be a thin film transistor or a field effect transistor or other switching device with the same characteristics, and the source and the drain of the transistor may be symmetric in structure, so the source thereof The drain can be indistinguishable in physical structure.
  • the first pole of all or part of the transistors in the embodiment of the present disclosure is directly described. Therefore, the first pole of all or part of the transistors in the embodiment of the present disclosure.
  • the second pole is interchangeable as needed.
  • the first pole of the transistor can be the source and the second pole can be the drain; or, for the P-type transistor, the first extreme drain of the transistor and the second source of the second.
  • An embodiment of the present disclosure provides a pixel circuit.
  • the pixel circuit 100 provided by the embodiment of the present disclosure may include a light emitting element 110 (for example, may be the light emitting element EL shown in FIG. 2b), an illumination control circuit 120, and a photo sensing circuit 130.
  • the pixel circuit 100 provided by the embodiment of the present disclosure can be applied to, for example, a display panel such as an active matrix organic light emitting diode (AMOLED) display panel or the like.
  • AMOLED active matrix organic light emitting diode
  • the specific structure of the light-emitting element 110, the light-emitting control circuit 120, and the photoelectric-sensing circuit 130 may be set according to actual application requirements, which is not specifically limited in the embodiment of the present disclosure.
  • a pixel circuit 100 provided by an embodiment of the present disclosure may be implemented as a circuit structure as shown in FIG. 2b.
  • the light emitting element 110 is configured to emit light under application of a voltage or current, and the first end c1 of the light emitting element 110 is for connection with the second end a2 of the light emission control circuit 120, the second end C2 is used to connect to the second power terminal V2.
  • the light emitting element 110 may be an organic light emitting element, and the organic light emitting element may be, for example, an organic light emitting diode, but embodiments of the present disclosure are not limited thereto.
  • the light-emitting element 110 may, for example, use different luminescent materials to emit light of different colors to perform color illuminating.
  • pixel circuit 100 can also include signal line 140.
  • the signal line 140 is arranged to receive and read the sensing electrical signal output by the sensing signal output terminal b1 of the photoelectric sensing circuit 130.
  • the pixel circuit 100 may further include a signal read switch circuit 160.
  • the signal reading switch circuit 160 can control the signal line 140 to read the sensing electrical signals output by the single photoelectric sensing circuit 130 to prevent the sensing of the output of the respective photoelectric sensing circuits 130.
  • the electrical signals interfere with each other, reducing noise and ensuring the signal-to-noise ratio of the sensed electrical signal.
  • the signal line 140 includes a first portion 141 and a second portion 142
  • the signal read switch circuit 160 is disposed between the first portion 141 and the second portion 142 and is configured to control the first portion 141 and the first portion
  • the two portions 142 are turned on or off, and the first portion 141 is used to connect to the sensing signal output terminal b1 of the photo sensing circuit 130.
  • the signal read switch circuit 160 includes a signal read switch transistor M10, and the control electrode of the signal read switch transistor M10 can receive the first output signal EM1, and the signal reads the one end of the first and second portions 142 of the switch transistor M10.
  • the other end of the second portion 142 is connected to a touch chip (not shown), for example, the second electrode of the signal read switch transistor M10 is connected to one end of the first portion 141, and the other end of the first portion 141 is connected to the photo sensing circuit 130.
  • the sensing signal output terminal b1 is connected.
  • the third end a3 of the illumination control circuit 120 is connected to the sensing signal output terminal b1 of the photo-sensing circuit 130, and the signal line 140 is configured to be connected to the third terminal a3 and the sensing signal output terminal b1.
  • the third end a3 of the illumination control circuit 120 can input a constant and controllable predetermined current to the sensing signal output terminal b1 of the photoelectric sensing circuit 130, so that the photoelectric sensing circuit 130 The sensing electrical signal is output to the sensing signal output terminal b1, and then the sensing electrical signal is read via the signal line 140 to implement touch detection or fingerprint recognition; or, in the display phase, the second end of the light control circuit 120 A2 may input a light-emission current signal corresponding to the light-emission data voltage to the light-emitting element 110 for realizing the light-emitting display.
  • the photoelectric sensing circuit 130 can time-multiplex the constant current generated by the light-emitting control circuit 120, realize high-precision sensing electrical signal detection, and improve the signal-to-noise ratio of the sensing electrical signal; that is, in the photoelectric sensing phase, the illumination control Circuit 120 can be equivalent to a current source.
  • the pixel circuit can also reduce the space occupied by the photoelectric sensing circuit at the same time, optimize the structural layout of the pixel circuit 100, save manufacturing costs, and increase the added value of the product.
  • the photo-sensing circuit 130 provided by the embodiment of the present disclosure will be described in detail below with reference to FIGS. 3a and 3b.
  • the photoelectric sensing circuit 130 is configured to sense the intensity of the light incident thereon, and the generated sensing electrical signal can be used to determine whether there is a touch action, and can also be used to implement fingerprint recognition.
  • the photo-sensing circuit 130 is configured to determine whether there is a touch action by sensing the intensity of light emitted by the light source module (eg, the light-emitting element 110) to which the touch-operated finger or the stylus is reflected; or It can also be configured to determine whether there is a touch action by sensing the intensity of the ambient light incident thereon.
  • the photoelectric sensing circuit 130 may be arranged in an array of m rows and n columns (m, n are integers), and the fingers formed by the ridge lines and the valley lines may be obtained by combining the sensing electrical signals output by the plurality of photoelectric sensing circuits 130. Fingerprint two-dimensional pattern to achieve fingerprint recognition.
  • the photo sensing circuit 130 can include a photosensitive element 230 and an amplifying circuit 231.
  • the photosensitive element 230 is configured to convert light incident thereon into a sensing electrical signal;
  • the amplifying circuit 231 is configured to amplify the sensing electrical signal output by the photosensitive element 230, whereby the sensing electrical signal of the photoelectric sensing circuit 130 can be boosted Signal to noise ratio. That is, the pixel circuit 100 provided by the embodiment of the present disclosure can ensure or enhance the signal-to-noise ratio of the sensing electrical signal while optimizing the circuit layout.
  • the photosensitive element 230 may include a photodiode PD that can sense the intensity of light incident thereon and cause a change in the reverse current of the photodiode PD.
  • the photodiode PD may include a PN junction type photodiode, a PIN junction type photodiode, an avalanche type photodiode, and a Schottky type photodiode.
  • the photosensitive element 230 may also include other suitable devices, such as metal-oxide-metal structure electrical contact photodiodes, phototransistors, and the like.
  • the photo sensing circuit 130 may further include a first node N1, and the amplifying circuit 231 may include a source follower transistor M8.
  • the source follower transistor M8 includes a control electrode, a first pole and a second pole, and the photodiode PD includes a first end and a second end.
  • the first node N1 is disposed between the gate of the source follower transistor M8 and the second end of the photodiode PD.
  • the first end of the photosensitive element 230 is connected to the bias voltage terminal VBIAS, and the second end thereof is connectable to the first node N1.
  • the second end of the photosensitive element 230 is configured to control the gate of the source follower transistor M8.
  • the gate of the source follower transistor M8 is also connected to the first node N1, and the first pole of the source follower transistor M8 can be set as the sense signal output b1 of the photo-sensing circuit 130, that is, the first pole of the source follower transistor M8 It may be used to connect with the third terminal a3 of the illumination control circuit 120 to receive a constant predetermined current transmitted from the illumination control circuit 120, and the first pole of the source follower transistor M8 is also connected to the signal line 140 at the same time to output the sensing.
  • the second pole of the source follower transistor M8 can be set as the inductive voltage access terminal b2 of the photosensor circuit 130, and the inductive voltage access terminal b2 is connected to the second power source terminal V2, that is, the source follows
  • the second pole of the transistor M8 can be connected to the second power terminal V2 to receive the second power voltage signal output by the second power terminal V2.
  • the photo-sensing circuit 130 can also include a reset circuit 232.
  • the output of reset circuit 232 is coupled between photosensor 230 and amplifier circuit 231 and is configured to reset the voltage of the output node of photodiode PD (e.g., corresponding to first node N1 in Figure 3a).
  • the reset circuit 232 may include a reset transistor M9, the control electrode of the reset transistor M9 is configured to receive the reset signal RST1, the first pole of the reset transistor M9 is connected to the first node N1, and the second pole of the reset transistor M9 is connected to the reset power terminal VRST1. To receive the reset voltage, the first pole of the reset transistor M9 can be set as the output of the reset circuit 232.
  • the photo-sensing circuit 130 may further include a buffer switch circuit 233 disposed between the photosensitive element 230 and the amplifying circuit 231 and configured to control the photosensitive element
  • the 230 and the amplifying circuit 231 are turned on or off, so that it can be used to control whether or not the sensing electric signal generated by the photodiode PD in response to the incident light is output.
  • the buffer switch circuit 233 may include a buffer transistor M11 having a first pole connected to the first node N1, a second pole connected to the second end of the photodiode PD, and a control pole for receiving the buffer control signal TX .
  • the buffer transistor M11 can buffer the sensing electrical signal generated by the photodiode PD and then follow the gate of the source follower transistor M8, so that the signal-to-noise ratio of the sensing electrical signal can be improved.
  • the photo-sensing circuit 130 can implement touch detection and/or fingerprint recognition functions by the following operations:
  • the signal reading phase is such that the buffer transistor M11 is in an on state to write the sensing electrical signal to the first node N1, and the third terminal a3 of the illumination control circuit 120 is the source follower transistor M8.
  • a pole provides a constant predetermined current such that the sense voltage on the first node N1 follows the first pole of the source follower transistor M8 and then reads the first pole on the source follower transistor M8 via the signal line 140. Sense voltage.
  • the reset signal RST1 becomes a low level, and the buffer control signal TX remains at a high level.
  • the reset transistor M9 is turned on, and the buffer transistor M11 is turned off, so that the voltage of the first node N1 can be set to the reset voltage.
  • the reset voltage can be a reference voltage and the reference voltage can be a high level signal.
  • the reset signal RST1 becomes a high level
  • the buffer control signal TX is also at a high level.
  • both the buffer transistor M11 and the reset transistor M9 are in an off state, and the light emitted by the light source (for example, the light emitting element EL) is reflected by, for example, a finger, and when irradiated onto the photodiode PD, the photon is excited to be on the PN junction of the photodiode.
  • An electron hole pair is generated, whereby the photodiode PD responds to the incident light and performs photoelectric conversion to generate a sensing electrical signal, and the sensing electrical signal accumulates on the photodiode PD to generate a voltage.
  • the reset signal RST1 is maintained at a high level, and the buffer control signal TX is changed to a low level, so that the buffer transistor M11 is turned on.
  • the sensing electrical signal can be written to the first node N1 via the buffer transistor M11, the voltage of the first node N1 is lowered, and a constant predetermined current outputted by the third terminal a3 of the light emission control circuit 120 can be applied to
  • the source follows the first pole of transistor M8 such that the sense voltage on first node N1 follows the gate of source follower transistor M8 to its first pole and is thus read by signal line 140.
  • the third terminal a3 of the illumination control circuit 120 can be applied with a constant predetermined current to the first pole of the source follower transistor M8, causing the reset voltage to follow from the gate of the source follower transistor M8 to its first
  • the reset voltage is then read through the signal line 140, and the reset voltage can be a reference voltage, and the sensed electrical signal can be obtained by making a difference between the reference voltage and the sense voltage.
  • the reference voltage may be set in advance in the signal reading circuit.
  • the magnitude of the sensed electrical signal depends on the magnitude of the voltage of the gate of the source follower transistor M8 (ie, the voltage of the first node N1), and the magnitude of the voltage of the gate of the source follower transistor M8 depends on the phase of the photoelectric conversion.
  • the accumulated value (integral value) of the electrical signal of the middle photodiode PD that is, the intensity of light incident on the photodiode PD.
  • the voltage of the first node N1 is lower, and thus the sensing electrical signal acquired by the signal line 140 in the signal reading phase is larger.
  • the sensing electrical signal acquired by the signal line 140 is greater than a predetermined value, it is determined that there is a touch operation at a corresponding position of the pixel circuit 100; and the sensing electrical signal outputted by the photodiode PD is less than or equal to a predetermined value.
  • the predetermined value can be obtained based on experimental measurements.
  • the display panel including the pixel circuit 100 can implement the functions of touch detection and/or fingerprint recognition.
  • the illumination control circuit 120 provided by the embodiment of the present disclosure will be described in detail below with reference to FIGS. 4a and 4b.
  • the illumination control circuit 120 can be implemented in various forms, such as a general 2T1C illumination control circuit, and other types of illumination control circuits that can be developed on the basis of these, and the illumination control circuit can further have a compensation function. Wait.
  • the illumination control circuit 120 can be coupled to the illumination element 110 and configured to drive the illumination element 110 to emit light.
  • the illumination control circuit 120 can include a first end a1, a second end a2, and a third end a3.
  • the first end a1 is for connection with the first power terminal V1
  • the second end a2 is for connecting with the first end c1 of the light-emitting element 110
  • the third end a3 is for connecting with the sensing signal output terminal b1 of the photo-sensing circuit 130.
  • the light emission control circuit 120 may include a light emission driving circuit 121, a light emission selection circuit 122, and a first capacitance C1.
  • the light emitting driving circuit 121 is configured to control a current for driving the light emitting element 110 to pass between the first end a1 and the second end a2, and the light emitting driving circuit 121 is further configured to control the first end a1 and the third end a3
  • the current passing through; the light emission selection circuit 122 is configured to write the light emission data voltage to the control terminal of the light emission driving circuit 121;
  • the first capacitance C1 may be configured to store the light emission data voltage and maintain it in the control of the light emission driving circuit 121 end.
  • the specific forms of the light-emitting driving circuit 121, the light-emitting selection circuit 122, and the first capacitor C1 may be set according to actual application requirements, which is not specifically limited in the embodiment of the present disclosure.
  • the illumination control circuit 120 further includes a lighting switch circuit 123.
  • the light-emitting switch circuit 123 is disposed between the light-emitting drive circuit 121 and the light-emitting element 110, and is configured to control the light-emitting drive circuit 121 and the light-emitting element 110 to be turned on or off.
  • the illumination control circuit 120 further includes a light sensing switch circuit 124.
  • the light sensing switch circuit 124 is disposed between the light emitting driving circuit 121 and the photo sensing circuit 130, and is configured to control to turn on or off the light emitting driving circuit 121 and the photo sensing circuit 130.
  • the illumination control circuit 120 can be implemented as a 4T1C circuit, and an illumination switch circuit and a photo-sensing switch circuit are added to the conventional 2T1C circuit, that is, four TFTs (Thin-film transistors) are used.
  • the transistor and a storage capacitor are used to implement the basic function of driving the light-emitting element 110 (for example, OLED) to emit light, and the photoelectric sensing circuit 130 can also be controlled to output a sensing electrical signal to implement the functions of touch detection and fingerprint recognition.
  • a 4T1C type illumination control circuit 120 may include a fifth transistor M5 (ie, illumination selection circuit 122), a third transistor M3 (ie, illumination driving circuit 121), and a sixth transistor M6 (ie, The light-emitting switch circuit 123), the light-sensitive switching transistor M7 (ie, the light-sensitive switch circuit 124), the first capacitor C1, the second node N2, and the third node N3.
  • the control electrode of the fifth transistor M5 can receive the scan signal Gate
  • the first pole of the fifth transistor M5 can be electrically connected to the data signal terminal Vdata to receive the illuminating data voltage Vdata1
  • the second pole of the fifth transistor M5 can be connected.
  • the control terminal of the third transistor M3 may be connected to the second node N2, the first electrode of the third transistor M3 may be connected to the third node N3, and the second electrode of the third transistor M3 may be connected to the first power supply terminal V1.
  • the first end of the first capacitor C1 is connected to the second node N2 (ie, between the second pole of the fifth transistor M5 and the gate of the third transistor M3), and the second end of the first capacitor C1 is connected to the A power terminal V1.
  • control electrode of the sixth transistor M6 can receive the second output signal EM2, and the first electrode of the sixth transistor M6 can be connected to the first end c1 of the light emitting element 110 (eg, the positive terminal of the OLED), and the sixth transistor M6
  • the second pole is also connected to the third node N3, that is, to the first pole of the third transistor M3; the second end c2 of the light emitting element 110 (for example, the negative terminal of the OLED) is connected to the second power terminal V2.
  • control electrode of the photo-sensitive switching transistor M7 can receive the first output signal EM1, the first pole of the photo-sensitive switching transistor M7 is connected to the sensing signal output terminal b1 of the photo-sensing circuit 130, and the second pole of the photo-sensitive switching transistor M7 is also Connected to the third node N3, that is, connected to the first pole of the third transistor M3.
  • control electrode of the photo-sensitive switching transistor M7 and the control electrode of the signal-reading switching transistor M10 may be connected to the same output signal line to receive the same first output signal EM1, or may be connected to The different output signal lines are synchronized with the first output signal EM1 applied by both.
  • one of the first power terminal V1 and the second power terminal V2 is a high voltage terminal and the other is a low voltage terminal.
  • the first power terminal V1 may be a voltage source to output a constant positive voltage; and the second power terminal V2 may be a ground terminal.
  • the 4T1C type illumination control circuit 120 is driven by controlling the brightness and darkness (gray scale) of the pixel via the four TFTs and the first capacitor C1.
  • the scan signal Gate is applied through the gate line to turn on the fifth transistor M5, and the data driving circuit charges the first capacitor C1 via the fifth transistor M5 through the illuminating data voltage V data1 fed through the data line, thereby emitting light.
  • the data voltage V data1 is stored in the first capacitor C1, and the stored illuminating data voltage V data1 can control the conduction degree of the third transistor M3, thereby controlling the magnitude of the current flowing through the third transistor M3; the second output signal EM2 Is applied to the gate of the sixth transistor M6 to turn on the sixth transistor M6 while turning off the photo-sensitive switching transistor M7, so that the sixth transistor M6 can receive the illuminating current signal flowing through the third transistor M3, and The illuminating current signal is transmitted to the illuminating element 110 to drive its illuminating, and the current flowing through the third transistor M3 can determine the gray level of the pixel illuminating.
  • the first output signal EM1 is applied to the gate of the photo-sensitive switching transistor M7 to turn on the photo-sensitive switching transistor M7 while turning off the sixth transistor M6, so that the photo-sensitive switching transistor M7 can receive
  • the predetermined current is transmitted by the three transistors M3, and the predetermined current is transmitted to the photoelectric sensing circuit 130 to control the photoelectric sensing circuit 130 to output the sensing electrical signal, thereby implementing the functions of touch detection and fingerprint recognition.
  • the predetermined current can be, for example, a constant predetermined current.
  • the embodiment of the present disclosure is described only with the illumination control circuit 120 being a 4T1C circuit, but the illumination control circuit 120 of the disclosed embodiment is not limited to the 4T1C circuit.
  • the illumination control circuit 120 may further include an electrical compensation function to improve the display uniformity of the display panel including the pixel circuit 100.
  • the compensation function can be implemented by voltage compensation, current compensation or hybrid compensation.
  • the illumination control circuit 120 with compensation function can be, for example, 4T2C, 6T1C and other illumination control circuits 120 with electrical compensation functions.
  • the illumination control circuit 120 can also include a illumination compensation circuit 125.
  • the illumination compensation circuit 125 is configured to compensate for the illumination drive circuit 120.
  • the illumination compensation circuit 125 can be an internal compensation circuit or an external compensation circuit.
  • FIG. 4b is a schematic circuit diagram of an illumination control circuit with a compensation function according to an embodiment of the present disclosure.
  • the illuminating compensation circuit 125 is an internal compensation circuit, which may include a first transistor M1, a second transistor M2, a fourth transistor M4, and a second capacitor C2, and the illuminating compensation circuit 125 may compensate for the third The threshold voltage Vth of the transistor M3 drifts.
  • FIGS. 5a and 5c are operational flows of the compensation method of the illumination control circuit shown in Fig. 4b. It should be noted that, in FIGS. 5a and 5c, setting a square ( ⁇ ) at the position of the transistor indicates that the transistor is in an on state, and setting a circle ( ⁇ ) at the position of the transistor indicates that the transistor is in an off state.
  • the scan signal Gate, the power supply control signal EM, the first output signal EM1, and the second output signal EM2 are both at a high level, and the reset signal Reset is at a low level. Therefore, the first transistor M1 is turned on, and the remaining transistors are all in an off state. At this time, the first transistor M1 resets the voltage of the fourth node N4 to the initial voltage Vint.
  • the initial voltage Vint is, for example, a low voltage signal.
  • the scan signal Gate becomes a low level
  • the reset signal Reset becomes a high level
  • the power supply control signal EM, the first output signal EM1, and the second output signal EM2 are both Keep high.
  • the second transistor M2 and the fifth transistor M5 are turned on, and the remaining transistors are in an off state.
  • the fourth node N4 is charged by the fifth transistor M5 until the voltage of the fourth node N4 is V data1 + Vth
  • V data1 is the light-emitting data voltage outputted by the data signal terminal Vdata
  • V th is the first The threshold voltage of the three transistor M3, which is stored in the second capacitor C2.
  • the voltage of the gate electrode of the third transistor M3 is V data1 + V th .
  • the scan signal Gate becomes a high level
  • the reset signal Reset and the first output signal EM1 remain at a high level
  • the power supply control signal EM and the second output signal EM2 become a low level.
  • the first transistor M1, the second transistor M2, and the fifth transistor M5 are in an off state
  • the fourth transistor M4 and the sixth transistor M6 are in an on state
  • the third transistor (drive transistor) M3 is also in an on state.
  • Iout K(V GS –V th ) 2
  • V GS is the voltage difference between the gate and the source of the third transistor M3
  • V 1 is the first power supply voltage signal outputted by the first power supply terminal V1
  • V th is the threshold voltage of the third transistor M3.
  • the threshold voltage Vth of the output current Iout at this time has not the third transistor M3, and a first supply voltage only with the first power supply terminal V1 signal V output voltage V 1 and the light emission data DATAl .
  • the illuminating compensation circuit 125 may also be an external compensation circuit.
  • the sensing circuit portion may be included to sense the electrical characteristics of the driving transistor or the electrical characteristics of the illuminating element. For details, refer to the conventional design, and details are not described herein again.
  • the display panel including the pixel circuit 100 is provided with a touch detection and fingerprint recognition function; by the third end a3 of the illumination control circuit 120
  • the sensing signal output terminal b1 of the photo-sensing circuit 130 is connected, so that the photo-sensing circuit 130 can time-multiplex the predetermined current output by the light-emitting control circuit 120, whereby the structural layout of the pixel circuit 100 can be optimized.
  • the amplifying circuit 231 in the photo sensing circuit 130 by providing the amplifying circuit 231 in the photo sensing circuit 130, the signal-to-noise ratio of the sensing electrical signal of the photo sensing circuit 130 can be ensured or improved in the case of optimizing the circuit layout.
  • the photoelectric sensing circuit can be replaced with other sensor circuits that need to work with a constant current source, thereby detecting other kinds of sensor signals.
  • An embodiment of the present disclosure provides a display panel, which further has a touch function or a fingerprint recognition function, etc., so that the functions of the electronic device using the display panel can be more diverse, the structure is more compact, and the like.
  • the display panel 10 includes a plurality of pixel units 11 arranged in an array.
  • FIG. 6a exemplarily shows two rows and three columns of pixel units 11, but the embodiment of the present disclosure is not limited thereto.
  • the display panel 10 may include 1440 rows and 900 columns.
  • Pixel unit 11 Pixel unit 11.
  • the pixel unit 11 includes the pixel circuit of any of the above.
  • the pixel unit 11 may include a light-emitting region 211 and a light-sensitive region 311.
  • the light-sensitive region 311 may be disposed between two adjacent light-emitting regions 211 in the row direction.
  • the light-sensitive region 311 may also be disposed in the column direction. Between the two adjacent light-emitting regions 211, or between the adjacent four light-emitting regions 311. It should be noted that the arrangement manner, the area ratio, and the like of the light-emitting area 311 and the light-sensing area 211 can be set according to actual application requirements, and the embodiment of the present disclosure does not specifically limit this.
  • the photosensitive area 211 may include a photoelectric sensing circuit
  • the photoelectric sensing circuit may include a photosensitive element (for example, the photodiode PD in the embodiment of the above pixel circuit), an amplifying circuit (for example, the above pixel circuit)
  • the source in the embodiment follows the transistor M8) and the reset circuit (for example, the reset transistor M9 in the embodiment of the above pixel circuit) and the like.
  • the light emitting region 311 may include a light emitting element (for example, the light emitting element EL in the embodiment of the above pixel circuit) and a light emission control circuit
  • the light emission control circuit may include a light emitting driving circuit (for example, the third transistor M3 in the embodiment of the above pixel circuit) a light-emitting selection circuit (for example, the fifth transistor M5 in the embodiment of the pixel circuit described above) and a capacitor (for example, the first capacitor C1 in the embodiment of the pixel circuit described above) and the like.
  • the photosensitive region 211 may include a plurality of photosensitive elements, that is, a plurality of photosensitive elements may correspond to one light emitting element, and the plurality of photosensitive elements may increase the sensing electrical signal, thereby improving touch detection and/or Or the accuracy of fingerprint recognition.
  • the correspondence between the photosensitive element and the light-emitting element can be set according to actual requirements, which is not limited in this embodiment.
  • one pixel unit may be selected among a plurality of (for example, ten) pixel units, and the pixel circuit described in any one of the above may be disposed in the pixel unit;
  • all pixel units 11 on the display panel 10 may include any of the pixel circuits described above.
  • At least one column of pixel units 11 of the display panel 10 includes any of the pixel circuits described above, and each of the at least one column of pixel units 11 can share the same signal line to reduce the number of signal lines and improve
  • the aperture ratio of the pixel unit for example, the sensing electrical signals output by the respective photoelectric sensing circuits in the column of pixel units 11 can be read in time to realize the touch detection and/or fingerprint recognition functions.
  • display panel 10 may also include an output selection circuit.
  • the output selection circuit In the touch and/or fingerprint recognition phase, the output selection circuit is configured to output a first output signal to control the display panel 10 to implement touch detection and/or fingerprint recognition functions; in the display phase, the output selection circuit is configured to output The two output signals are used to control the display panel 10 to implement a normal display function.
  • the pixel circuit shown in Figure 4a Take the pixel circuit shown in Figure 4a as an example. For example, if the first output signal EM1 is at a low level and the second output signal EM2 is at a high level, at this time, the photo-sensitive switching transistor M7 is turned on, and the sixth transistor M6 is turned off.
  • the illumination control circuit 120 converts the fixed signal read voltage provided by the data signal terminal Vdata into a constant predetermined current, and then is transmitted to the photo-sensing circuit via the photo-sensitive switching transistor M7. At this time, the signal line can read the output of the photo-sensing circuit.
  • the electrical signal is sensed such that the display panel 10 can implement touch detection and/or fingerprint recognition functions. For example, if the first output signal EM1 is at a high level and the second output signal EM2 is at a low level, at this time, the photo-sensitive switching transistor M7 is turned off, and the sixth transistor M6 is turned on.
  • the light emission control circuit 120 converts the light emission data voltage supplied from the data signal terminal Vdata into an emission current signal, and then is transmitted to the light emitting element EL via the sixth transistor M6, so that the display panel 10 can realize the normal light emission display function.
  • FIG. 7 is a cross-sectional structural diagram of a pixel unit of a display panel according to an embodiment of the present disclosure.
  • one pixel unit of the display panel 10 may include a reset transistor 114 (for example, a reset transistor M9 in the embodiment of the above pixel circuit) provided on the base substrate 60, a photosensitive element 112, and an illumination switching transistor 115 (for example, the above The sixth transistor M6) and the light emitting element 110 in the embodiment of the pixel circuit.
  • a reset transistor 114 for example, a reset transistor M9 in the embodiment of the above pixel circuit
  • an illumination switching transistor 115 for example, the above The sixth transistor M6 and the light emitting element 110 in the embodiment of the pixel circuit.
  • the reset transistor 114 is a top gate type transistor, and may include an active layer 154, a first gate insulating layer GI1, a gate 134, a second gate insulating layer GI2, an interlayer insulating layer ILD, and a source. Pole/drain 144.
  • the photosensitive element 112 may include a positive electrode, a negative electrode, and a photo-sensitive layer disposed therebetween.
  • a passivation layer PVX may be disposed between the photosensitive element 112 and the reset transistor 114. The second end of the photosensitive element 112 may be electrically connected to the source or drain 144 of the reset transistor 114 through a via penetrating the passivation layer PVX.
  • the first end may be drawn from a via that passes through the passivation layer PVX and the planarization layer PLN and is led out by the lead 61, and is finally electrically connected to the bias voltage terminal.
  • both ends of the photosensitive element 112 can be connected to the backplane circuit through via holes to achieve electrical connection.
  • the light-emitting switching transistor 115 may also be a top-gate transistor, and may include an active layer 155, a first gate insulating layer GI1, a gate electrode 135, a second gate insulating layer GI2, and an interlayer insulating layer. ILD and source/drain 145.
  • the light emitting element 110 may include a cathode 72, an anode 71, a light emitting layer 70 interposed therebetween, and a pixel defining layer PDL.
  • a passivation layer PVX and a flat layer PLN may be disposed between the light emitting element 110 and the light emitting switch transistor 115, and the anode 71 of the light emitting element 110 may pass through a via hole penetrating the passivation layer PVX and the flat layer PLN and a source of the light emitting switching transistor 115 or The drain 145 is electrically connected.
  • the layers of the reset transistor 114 and the light-emitting switching transistor 115 can be formed simultaneously. Thereby, the process flow of the display panel 10 can be simplified.
  • the pixel unit further includes a spacer PS to maintain uniformity of the display panel 10.
  • the material of the spacer PS may be a suitable material such as an ultraviolet (UV) hardening type acryl resin.
  • the shape of the spacer PS may be a column shape, a spherical shape, or the like.
  • the pixel unit shown in FIG. 7 shows only the reset transistor 114, the photosensitive element 112, the light-emitting switching transistor 115, and the light-emitting element 110.
  • the pixel unit may further include other structures, and the pixel unit may further include, for example, the remaining devices in the embodiment of the above pixel circuit, for example, a signal line, a light sensing switch circuit, or the like. I will not repeat them here.
  • An embodiment of the present disclosure provides a driving method of a pixel circuit according to any of the above.
  • the driving method of the pixel circuit may include the following operations:
  • the illumination control circuit drives the light emitting element to emit light
  • S220 In the photoelectric sensing phase, output a predetermined current from the third end of the illumination control circuit to the photo-sensing circuit, and then read an output signal of the photo-sensing circuit.
  • the electrical connection between the photo-sensing circuit and the illuminating control circuit is disconnected, for example, the sixth transistor is turned on, and the photo-sensing switching transistor is turned off, so that the illuminating current signal generated by the illuminating control circuit is output to the illuminating An element that drives the light emitting element to emit light.
  • the electrical connection between the light-emitting element and the light-emitting control circuit is broken, for example, the sixth transistor is turned off, and the light-sensitive switching transistor is turned on, so that the predetermined current generated by the light-emitting control circuit is output to the photoelectric sensing.
  • the circuit can read the output signal of the photoelectric sensing circuit through, for example, a signal line, thereby implementing touch detection and/or fingerprint recognition functions.
  • a plurality of photo-sensing stages may be included, and the predetermined current output by the third end of the illumination control circuit is the same in a plurality of photo-sensing stages.
  • a photoelectric sensing phase can be set for every two or more display phases. This reduces power consumption.
  • the timing chart for driving the pixel circuit can be set according to actual needs, which is not specifically limited in the embodiment of the present disclosure.
  • FIG. 9b is an exemplary timing diagram of a driving method of the pixel circuit shown in FIG. 9a.
  • the length of time of the photo-sensing phase as shown in FIG. 9b is less than the length of time of the display phase, but embodiments of the present disclosure are not limited thereto.
  • the length of time of the photoelectric sensing phase and the length of the display phase may be equal; the length of the photoelectric sensing phase may also be equal to one-half or one-tenth of the length of the display phase.
  • the display phase may further include a first reset phase RT1, a compensation phase CT, and an illumination phase LT.
  • the scan signal Gate, the power control signal EM, the first output signal EM1, the second output signal EM2, and the reset signal RST1 are both at a high level, and the reset signal Reset is at a low level, thereby being first Transistor M1 is turned on, and the remaining transistors are all turned off.
  • the first transistor M1 resets the voltage of the third node N3 to the initial voltage Vint.
  • the initial voltage Vint is a low voltage signal.
  • the scan signal Gate becomes a low level
  • the reset signal Reset becomes a high level
  • the power supply control signal EM, the first output signal EM1, the second output signal EM2, and the reset signal RST1 are both maintained at a high level.
  • the second transistor M2 and the fifth transistor M5 are turned on, and the remaining transistors are in an off state.
  • the third node N3 is charged by the fifth transistor M5 until the voltage of the third node N3 is V data1 + Vth
  • V data1 is the light-emitting data voltage outputted by the data signal terminal Vdata
  • V th is the first The threshold voltage of the three transistor M3, which is stored in the second capacitor C2.
  • the voltage of the gate electrode of the third transistor M3 is V data1 + V th .
  • the scan signal Gate becomes a high level
  • the second output signal EM2 and the power supply control signal EM become a low level
  • the first output signal EM1, the reset signal Reset, and the reset signal RST1 remain at a high level.
  • the third transistor T3, the fourth transistor M4, and the sixth transistor M6 are turned on, and the remaining transistors are in an off state. Thereby, the light-emission current signal flowing through the third transistor T3 is transmitted to the light-emitting element EL through the sixth transistor M6, thereby driving the light-emitting element EL to emit light corresponding to the light-emitting data voltage.
  • the illuminating current signal flowing through the third transistor M3 can be obtained:
  • Iout K(V GS –V th ) 2
  • the output current Iout is no longer affected by the threshold voltage Vth of the third transistor M3. That is, the current Iout that drives the light-emitting element EL to emit light is not affected by the threshold voltage Vth of the third transistor M3, whereby the light-emission control circuit can compensate for the threshold voltage Vth drift of the third transistor M3.
  • the first output signal EM1 is kept at a high level, so that the light sensing switching transistor M7 is in an off state, that is, the light emitting current signal generated by the light emitting control circuit cannot be transmitted to the photoelectric sensing circuit, thereby the signal line cannot read the photoelectric sensing.
  • the sensing electrical signal output by the circuit, the pixel circuit realizes the normal display function.
  • the photo-sensing phase includes a second reset phase RT2, a compensated reset phase CRT, and a signal read phase SRT.
  • the second reset phase RT2 is the same as the first reset phase RT1 in the display phase, and details are not described herein again.
  • the scan signal Gate and the reset signal RST1 become a low level
  • the reset signal Reset becomes a high level
  • the power supply control signal EM, the first output signal EM1, and the second output signal EM2 are both maintained at a high level.
  • the second transistor M2 and the fifth transistor M5 are turned on, whereby the third node N3 is charged by the fifth transistor M5, and is charged until the voltage of the third node N3 is V data2 + V th , V data2
  • the signal read voltage for the data signal terminal Vdata, Vth is the threshold voltage of the third transistor M3, and the voltage is stored in the second capacitor C2.
  • the voltage of the gate electrode of the third transistor M3 is V data2 + V th .
  • the reset transistor M9 is turned on to write the reset voltage on the first node N1 through the reset transistor M9, the reset voltage may be a reference voltage, and the reference voltage may be a high level signal. During this phase, the remaining transistors are in an off state.
  • the signal read voltage V data2 remains unchanged during each photo-sensing phase, thereby obtaining a stable predetermined current at the third end of the illumination control circuit; or the signal read voltage V data2 is varied as needed during each photo-sensing phase. Thereby obtaining a desired predetermined current at the third end of the illumination control circuit.
  • the scan signal Gate and the reset signal RST1 become a high level
  • the power supply control signal EM and the first output signal EM1 become a low level
  • the reset signal Reset and the second output signal EM2 remain at a high level.
  • the third transistor T3 and the fourth transistor M4 are turned on, and the light emission control circuit converts the signal read voltage V data2 transmitted by the data signal terminal Vdata into a constant predetermined current and transmits it to the third terminal a3, and the light sensing switch
  • the transistor M7 is turned on, so that the predetermined current outputted by the third end a3 of the illumination control circuit can be transmitted to the sensing signal output terminal b1 of the photo-sensing circuit via the photo-sensitive switching transistor M7, so that the sensing electrical signal generated by the photosensitive element PD can pass through the source.
  • the pole follower transistor M8 follows to the sense signal output b1, and then the sensed electrical signal is read through the signal line 140.
  • each photo sensing stage may include a plurality of signal reading stages SRT to time-read the sensing electrical signals of the photo-sensing circuits of the plurality of different sub-pixels.
  • the second output signal EM2 is kept at a high level, so that the sixth transistor M6 is in an off state, that is, a predetermined current generated by the light-emission control circuit cannot be transmitted to the light-emitting element EL, whereby the light-emitting element EL does not emit light, and the pixel circuit Implement touch detection and/or fingerprint recognition.
  • the photoelectric sensing circuit in the pixel circuit provided by at least one embodiment of the present disclosure adopts an active detection method, and time-multiplexes a constant predetermined current generated by the illumination control circuit, thereby realizing high-precision sensing electrical signal detection and improving sensing.
  • the signal-to-noise ratio of the electrical signal at the same time, the space occupied by the photoelectric sensing circuit is reduced, the structural layout of the pixel circuit is optimized, the manufacturing cost is saved, and the added value of the product is improved.

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  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)

Abstract

一种像素电路及其驱动方法、显示面板。该像素电路(100)包括发光元件(110)、发光控制电路(120)和光电感应电路(130)。发光控制电路(120)被配置为驱动发光元件(110)发光且包括第一端(a1)、第二端(a2)和第三端(a3)，其第一端(a1)用于与第一电源端(V1)连接，其第二端(a2)用于与发光元件(110)连接；发光元件(110)的一端(c1)用于与发光控制电路(120)的第二端(a2)连接，另一端(c2)用于与第二电源端(V2)连接；光电感应电路(130)被配置为感测入射到其上的光线且包括感应信号输出端(b1)和感应电压接入端(b2)，感应电压接入端(b2)用于与第二电源端(V2)连接，感应信号输出端(b1)用于与发光控制电路(120)的第三端(a3)连接。像素电路(100)中的光电感应电路(130)可以分时复用发光控制电路(120)产生的恒定电流，实现高精度的感测电信号检测，同时优化像素电路(100)的结构布局。

Description

像素电路及其驱动方法、显示面板
本申请要求于2017年06月02日递交的中国专利申请第201710407689.3号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及一种像素电路及其驱动方法、显示面板。
背景技术
有机发光二极管(Organic Light Emitting Diode，OLED)显示面板由于具有视角宽、对比度高、响应速度快以及发光亮度高、驱动电压低以及可实现柔性显示等优势，而逐渐受到人们的广泛关注。作为新一代的显示方式，OLED显示面板被广泛应用在手机、电脑、全彩电视、数码摄像机、个人数字助理等电子产品上。
随着显示技术的高速发展，具有生物识别功能的电子设备逐渐进入人们的生活工作中，指纹识别技术凭借着其唯一身份特性，备受人们重视。目前，基于硅基工艺的按压式与滑动式指纹识别技术逐渐整合入各种电子产品中，具备指纹识别功能的OLED显示面板也成为显示面板的一个研究热点。
发明内容
本公开至少一个实施例提供一种像素电路，该像素电路包括：发光元件、发光控制电路和光电感应电路。所述发光控制电路被配置为驱动所述发光元件发光且包括第一端、第二端和第三端，所述第一端用于与第一电源端连接，所述第二端用于与所述发光元件连接；所述发光元件的一端用于与所述发光控制电路的第二端连接，另一端用于与第二电源端连接；所述光电感应电路被配置为感测入射到其上的光线且包括感应信号输出端和感应电压接入端，所述感应电压接入端用于与所述第二电源端连接，所述感应信号输出端用于与所述发光控制电路的第三端连接。
本公开至少一个实施例还提供一种显示面板，其包括阵列排列的像素单元。至少一个所述像素单元包括上述任一所述的像素电路。
本公开至少一个实施例还提供一种根据上述任一所述的像素电路的驱动方法，其包括：在显示阶段，所述发光控制电路驱动所述发光元件发光；在光电感应阶段，从所述发光控制电路的第三端输出预定电流至所述光电感应电路，然后读取所述光电感应电路的输出信号。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1是一种光学式指纹识别器件的平面电路示意图；
图2a是本公开一实施例提供的一种像素电路的示意性框图；
图2b是本公开一实施例提供的一种像素电路的示意性电路图；
图2c是本公开一实施例提供的又一种像素电路的示意性电路图；
图3a是本公开一实施例提供的一种光电感应电路的示意性电路图；
图3b是本公开一实施例提供的又一种光电感应电路的示意性电路图；
图4a是本公开一实施例提供的一种发光控制电路的示意性电路图；
图4b是本公开一实施例提供的又一种发光控制电路的示意性电路图；
图5a-图5d是图4b所示的发光控制电路的补偿方法的操作流程；
图6a是本公开一实施例提供的一种显示面板的平面示意图；
图6b是本公开一实施例提供的一种显示面板的一个像素单元的示意性框图；
图7是本公开一实施例提供的一种显示面板的一个像素单元的截面结构示意图；
图8为本公开一实施例提供的一种像素电路的驱动方法的流程图；
图9a为本公开一实施例提供的再一种像素电路的示意性电路图；
图9b为图9a所示的像素电路的驱动方法的示例性时序图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的 本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
为了保持本公开实施例的以下说明清楚且简明，本公开省略了已知功能和已知部件的详细说明。
指纹识别技术主要有电容式、超声波式、光学式等技术。光学式指纹识别技术使用光学检测方式，通过探测由光信号转变得到的电信号来实现其检测和识别功能，具有灵敏度高、稳定性好、使用寿命长以及长距离可感应等优势。具备指纹识别功能的有机发光二极管显示面板例如可以采用光学式指纹识别技术。
图1示出了一种光学式指纹识别器件的平面电路示意图。
例如，如图1所示，该光学式指纹识别器件包括多条扫描线、多条读取线和阵列排布的多个光电感应电路9，每个光电感应电路9位于一个子像素内。这里，该光电感应电路9采用被动式检测方法。例如，每个光电感应电路9包括一个光电二极管90和输出晶体管91，光电二极管90用于将光信号转换为感测电信号，输出晶体管91用于控制将光电二极管90产生的感测电信号输出至读取线。光电二极管90的一端与电源电压端Vd连接，另一端与输出晶体管91的第一极连接；输出晶体管91的控制极与一条扫描线连接，以接收扫描控制信号，输出晶体管91的第二极与一条读取线连接。
例如，指纹识别的具体过程可以为：在光感积累阶段内，光源照射到手指上，手指对入射的光线进行反射，反射光线照射到光电二极管90上，光电二极管90将反射光线的光信号转换为与光信号强度相对应的感测电信号，由于 指纹的脊线和谷线的几何特征不同，脊线是凸起的而谷线是凹下的，所以它们在被光线照射时，对光的反射强度也就不同，导致不同位置处的光电二极管90输出的感测电信号也不同；在输出阶段内，输出晶体管91的控制端接收扫描线传输的开启信号，输出晶体管91依次被开启，从而读取线可以依次读取出各个光电二极管90产生的感测电信号，通过检测各个感测电信号的大小，即可实现对指纹谷脊的检测，从而实现指纹识别。
由于光电二极管90产生的感测电信号较小，该被动式光电感应电路9的检测能力有限、检测难度大、检测到的感测电信号的精度低、信噪比低。另外，该读取线与一列光电二极管90连接，从而每列所有的光电二极管90输出的感测电信号之间会互相干扰，影响检测精度。
本公开至少一个实施例提供一种像素电路及其驱动方法、显示面板。该像素电路包括：发光元件、发光控制电路和光电感应电路。发光控制电路被配置为驱动发光元件发光且包括第一端、第二端和第三端，其第一端用于与第一电源端连接，其第二端用于与发光元件连接；发光元件的一端用于与发光控制电路的第二端连接，另一端用于与第二电源端连接；光电感应电路被配置为感测入射到其上的光线且包括感应信号输出端和感应电压接入端，感应电压接入端用于与第二电源端连接，感应信号输出端用于与发光控制电路的第三端连接。
本公开的至少一个实施例中，像素电路中的光电感应电路采用主动式检测方法，且分时复用发光控制电路产生的恒定电流，从而实现高精度的感测电信号检测、提高感测电信号的信噪比；另外，本公开的至少一个实施例还可以同时减少光电感应电路所占用的空间，优化像素电路的结构布局，节省制造成本，提升产品的附加值。
例如，按照晶体管的特性，晶体管可以分为N型晶体管和P型晶体管，为了清楚起见，本公开的实施例以晶体管为P型晶体管为例详细阐述了本公开的技术方案，然而本公开的实施例的晶体管不限于P型晶体管，本领域技术人员还可以根据实际需要利用N型晶体管实现本公开中的实施例中的一个或多个晶体管的功能。
需要说明的是，本公开的实施例中采用的晶体管可以为薄膜晶体管或场效应晶体管或其他特性相同的开关器件，且晶体管的源极、漏极在结构上可以是对称的，所以其源极、漏极在物理结构上可以是没有区别的。在本公开的实施例中，为了区分晶体管除作为控制极的栅极，直接描述了其中一极为第一极， 另一极为第二极，所以本公开实施例中全部或部分晶体管的第一极和第二极根据需要是可以互换的。例如，对于N型晶体管，晶体管的第一极可以为源极，第二极可以为漏极；或者，对于P型晶体管，晶体管的第一极为漏极，第二极为源极。
下面通过几个实施例对根据本公开的像素电路及其驱动方法、显示面板进行说明，但是本公开并不限于这些具体的实施例。
本公开一实施例提供一种像素电路。
例如，如图2a和图2b所示，本公开实施例提供的像素电路100可以包括发光元件110(例如，可以为图2b所示的发光元件EL)、发光控制电路120和光电感应电路130。本公开实施例提供的像素电路100例如可应用于显示面板，例如有源矩阵有机发光二极管(AMOLED)显示面板等。
例如，发光元件110、发光控制电路120和光电感应电路130的具体结构可以根据实际应用需求进行设定，本公开的实施例对此不作具体限定。例如，本公开一实施例提供的一种像素电路100可以实现为如图2b所示的电路结构。
例如，如图2b所示，发光元件110被配置为在施加电压或电流的情况下发光，且发光元件110的第一端c1用于与发光控制电路120的第二端a2连接，第二端c2用于与第二电源端V2连接。发光元件110可以为有机发光元件，有机发光元件例如可以为有机发光二极管，但本公开的实施例不限于此。发光元件110例如可以采用不同的发光材料，以发出不同颜色的光，从而进行彩色发光。
例如，在一个示例中，如图2a和图2b所示，像素电路100还可以包括信号线140。信号线140设置为接收并读取光电感应电路130的感应信号输出端b1输出的感测电信号。
例如，在一个示例中，如图2c所示，在图2b的基础上，像素电路100还可以包括信号读取开关电路160。当多个光电感应电路130共用一根信号线140时，信号读取开关电路160可以控制信号线140读取单个光电感应电路130输出的感测电信号，防止各个光电感应电路130输出的感测电信号之间互相干扰，降低噪声，保证感测电信号的信噪比。
例如，如图2c所示，信号线140包括第一部分141和第二部分142，信号读取开关电路160设置在第一部分141和第二部分142之间且被配置为控制将第一部分141和第二部分142导通或断开，第一部分141用于与光电感应电路 130的感应信号输出端b1连接。例如，信号读取开关电路160包括信号读取开关晶体管M10，信号读取开关晶体管M10的控制极可以接收第一输出信号EM1，信号读取开关晶体管M10的第一极与第二部分142的一端连接，第二部分142的另一端例如连接到触控芯片(未示出)，信号读取开关晶体管M10的第二极与第一部分141的一端连接，第一部分141的另一端与光电感应电路130的感应信号输出端b1连接。
例如，发光控制电路120的第三端a3和光电感应电路130的感应信号输出端b1连接，信号线140被配置为与该第三端a3和感应信号输出端b1连接。由此，在触控检测和/或指纹识别阶段，发光控制电路120的第三端a3可以向光电感应电路130的感应信号输出端b1输入恒定且可控制的预定电流，以使光电感应电路130的感测电信号输出至其感应信号输出端b1，然后经由信号线140读取该感测电信号，以实现触控检测或指纹识别；或者，在显示阶段，光控制电路120的第二端a2可以向发光元件110输入与发光数据电压相对应的发光电流信号，以用于实现发光显示。由此光电感应电路130可以分时复用发光控制电路120产生的恒定电流，实现高精度的感测电信号检测、提高感测电信号的信噪比；也即，在光电感应阶段，发光控制电路120可以等效为一个电流源。该像素电路还可以同时减少光电感应电路所占用的空间，优化像素电路100的结构布局，节省制造成本，提升产品的附加值。
例如，下面结合图3a和图3b对本公开的实施例提供的光电感应电路130进行详细说明。
例如，光电感应电路130被配置为可以感测入射到其上光线的强弱，所产生的感测电信号可以用于判定是否存在触控动作，还可以用于实现指纹识别。例如，光电感应电路130被配置为通过感测由触控操作的手指或触控笔反射到其上的由光源模块(例如发光元件110)发射的光线的强弱判定是否存在触控动作；或者，还可以配置为通过感测入射到其上的环境光线的强弱判定是否存在触控动作。又例如，光电感应电路130可以布置为m行n列的阵列(m、n为整数)，通过组合多个光电感应电路130输出的感测电信号可以得到由脊线和谷线构成的手指的指纹二维图样，从而实现指纹识别。
例如，如图3a所示，在一个示例中，光电感应电路130可以包括感光元件230和放大电路231。感光元件230配置为将入射到其上的光线转换为感测电信号；放大电路231被配置为放大感光元件230输出的感测电信号，由此可 以提升光电感应电路130的感测电信号的信噪比。也即，本公开实施例提供的像素电路100可以在优化电路布局的情况下保证或提升感测电信号的信噪比。
例如，感光元件230可以包括光电二极管PD，光电二极管PD可以感测入射到其上的光线的强弱，并引起光电二极管PD的反向电流的变化。例如，光电二极管PD可以包括PN结型光电二极管、PIN结型光电二极管、雪崩型光电二极管以及肖特基型光电二极管等。需要说明的是，感光元件230还可以包括其他适当的器件，例如金属-氧化物-金属结构的电接触光电二极管、光电晶体管等光伏探测器件。
例如，光电感应电路130还可以包括第一节点N1，放大电路231可以包括源极跟随晶体管M8。源极跟随晶体管M8包括控制极、第一极和第二极，光电二极管PD包括第一端和第二端。例如，第一节点N1设置在源极跟随晶体管M8的控制极与光电二极管PD的第二端之间。感光元件230的第一端连接到偏置电压端VBIAS，其第二端可以连接到第一节点N1。感光元件230的第二端被配置为控制源极跟随晶体管M8的控制极。源极跟随晶体管M8的控制极也连接到第一节点N1，源极跟随晶体管M8的第一极可以设置为光电感应电路130的感应信号输出端b1，即，源极跟随晶体管M8的第一极可以用于与发光控制电路120的第三端a3连接，以接收从发光控制电路120传输的恒定的预定电流，源极跟随晶体管M8的第一极同时也连接到信号线140，以输出感测电信号；源极跟随晶体管M8的第二极可以设置为光电感应电路130的感应电压接入端b2，感应电压接入端b2用于与第二电源端V2连接，也就是说，源极跟随晶体管M8的第二极可以与第二电源端V2连接，以接收第二电源端V2输出的第二电源电压信号。
例如，如图3a所示，在一个示例中，光电感应电路130还可以包括复位电路232。复位电路232的输出端连接到感光元件230和放大电路231之间，且被配置为将光电二极管PD的输出节点(例如在图3a中可对应于第一节点N1)的电压进行复位。复位电路232可以包括复位晶体管M9，复位晶体管M9的控制极被配置为接收复位信号RST1、复位晶体管M9的第一极连接到第一节点N1，复位晶体管M9的第二极与复位电源端VRST1连接，以接收复位电压，复位晶体管M9的第一极可以设置为复位电路232的输出端。
例如，如图3b所示，在另一个示例中，光电感应电路130还可以包括缓冲开关电路233，缓冲开关电路233设置在感光元件230和与放大电路231之 间且被配置为控制将感光元件230和与放大电路231导通或断开，从而可以用于控制是否输出光电二极管PD响应入射光产生的感测电信号。
例如，缓冲开关电路233可以包括缓冲晶体管M11，缓冲晶体管M11的第一极连接到第一节点N1，其第二极连接到光电二极管PD的第二端，其控制极用于接收缓冲控制信号TX。缓冲晶体管M11可以将光电二极管PD产生的感测电信号先进行缓冲，再跟随到源极跟随晶体管M8的控制极，从而可以提高感测电信号的信噪比。
例如，在光电感应电路130包括光电二极管PD、源极跟随晶体管M8、复位晶体管M9和缓冲晶体管M11的情况下，光电感应电路130可以通过以下操作实现触控探测和/或指纹识别功能：
S110：复位阶段，使复位晶体管M9处于导通状态，并经由复位晶体管M9的将复位电压写入到第一节点N1上；
S120：光电转换阶段，使复位晶体管M9处于截止状态，且使缓冲晶体管M11处于截止状态，光电二极管PD产生并积累感测电信号；
S130：信号读取阶段，使缓冲晶体管M11处于导通状态，以将感测电信号写入到第一节点N1上，并使发光控制电路120的第三端a3为源极跟随晶体管M8的第一极提供恒定的预定电流，以使第一节点N1上的感测电压跟随至源极跟随晶体管M8的第一极上，然后经由信号线140读取源极跟随晶体管M8的第一极上的感测电压。
例如，在操作S110中，复位信号RST1变为低电平，而缓冲控制信号TX保持为高电平。此时，复位晶体管M9导通，缓冲晶体管M11处于截止状态，从而可以将第一节点N1的电压设置为复位电压。例如，复位电压可以为参考电压，参考电压可以为高电平信号。
例如，在操作S120中，当进行触控操作或进行指纹识别的情况下，复位信号RST1变为高电平，缓冲控制信号TX也为高电平。由此缓冲晶体管M11和复位晶体管M9均处于截止状态，光源(例如，发光元件EL)发射的光线被例如手指反射，并照射到光电二极管PD上时，光量子受激发从而在光电二极管的PN结上产生电子空穴对，由此光电二极管PD响应入射光并进行光电转换以产生感测电信号，感测电信号在光电二极管PD上积累以产生电压。
例如，在操作S130中，复位信号RST1保持高电平，缓冲控制信号TX变为低电平，从而缓冲晶体管M11导通。此时，感测电信号可以经由缓冲晶体 管M11被写入到第一节点N1上，第一节点N1的电压下降，同时发光控制电路120的第三端a3输出的恒定的预定电流可以被施加到源极跟随晶体管M8的第一极上，从而使第一节点N1上的感测电压从源极跟随晶体管M8的控制极跟随到其第一极上，进而被信号线140读取。
例如，在复位阶段，可以使发光控制电路120的第三端a3给源极跟随晶体管M8的第一极施加恒定的预定电流，使复位电压从源极跟随晶体管M8的控制极跟随至其第一极，然后通过信号线140读取该复位电压，该复位电压可以为参考电压，通过对参考电压和感测电压做差值即可得到感测电信号。又例如，也可以预先在信号读取电路中设置参考电压。
例如，感测电信号的大小取决于源极跟随晶体管M8的控制极的电压(也即，第一节点N1的电压)大小，而源极跟随晶体管M8的控制极的电压大小取决于光电转换阶段中光电二极管PD的电信号累积值(积分值)，也即入射到光电二极管PD上的光线强度。由此，可以通过组合多个光电二极管PD输出的感测电信号而进行指纹识别；或者，也可以根据光电二极管PD输出的感测电信号的大小判定该像素电路100的对应位置处的是否存在触控操作。例如，相比于不存在触控操作，在存在触控操作的情况下，第一节点N1的电压更低，因此在信号读取阶段中信号线140获取的感测电信号的更大，由此可以在信号线140获取的感测电信号大于预定数值的情况下，判定该像素电路100的对应位置处的存在触控操作；而在光电二极管PD输出的感测电信号小于或等于预定数值的情况下，判定该像素电路100的对应位置处的不存在触控操作。例如，预定数值可以根据实验测定获得。由此包含该像素电路100的显示面板可以实现触控检测和/或指纹识别的功能。
例如，下面结合图4a和图4b对本公开实施例提供的发光控制电路120进行详细说明。在本公开的实施例中发光控制电路120可以实现为多种形式，例如通常的2T1C发光控制电路，也可以在此基础发展出来的其他类型的发光控制电路，这些发光控制电路可以进一步具有补偿功能等。
例如，如图4a所示，发光控制电路120可以与发光元件110连接且配置为驱动发光元件110发光。发光控制电路120可以包括第一端a1、第二端a2和第三端a3。第一端a1用于与第一电源端V1连接，第二端a2用于与发光元件110的第一端c1连接，第三端a3用于与光电感应电路130的感应信号输出端b1连接。
例如，发光控制电路120可以包括发光驱动电路121、发光选择电路122和第一电容C1。发光驱动电路121被配置为控制在第一端a1和第二端a2之间通过的用于驱动发光元件110发光的电流，发光驱动电路121还配置为控制第一端a1和第三端a3之间通过的电流；发光选择电路122被配置为将发光数据电压写入到发光驱动电路121的控制端；第一电容C1可以配置为存储该发光数据电压并将其保持在发光驱动电路121的控制端。需要说明的是，发光驱动电路121、发光选择电路122和第一电容C1的具体形式可以根据实际应用需求进行设定，本公开的实施例对此不作具体限定。
例如，在一个示例中，如图4a所示，发光控制电路120还包括发光开关电路123。发光开关电路123设置在发光驱动电路121和发光元件110之间，且被配置为控制将发光驱动电路121和发光元件110导通或断开。
例如，在一个示例中，如图4a所示，发光控制电路120还包括光感开关电路124。光感开关电路124设置在发光驱动电路121与光电感应电路130之间，且被配置为控制将发光驱动电路121和光电感应电路130导通或断开。
例如，图4a所示的示例中，发光控制电路120可以实现为4T1C电路，在传统的2T1C电路的基础上增加了发光开关电路和光感开关电路，即利用四个TFT(Thin-film transistor，薄膜晶体管)和一个存储电容，以实现驱动发光元件110(例如，OLED)发光的基本功能，还可以控制光电感应电路130输出感测电信号，以实现触控检测和指纹识别的功能。
例如，如图4a所示，一种4T1C型发光控制电路120可以包括第五晶体管M5(即，发光选择电路122)、第三晶体管M3(即，发光驱动电路121)、第六晶体管M6(即，发光开关电路123)、光感开关晶体管M7(即，光感开关电路124)、第一电容C1、第二节点N2以及第三节点N3。例如，该第五晶体管M5的控制极可以接收扫描信号Gate，第五晶体管M5的第一极可以电连接到数据信号端Vdata以接收发光数据电压V data1，第五晶体管M5的第二极可以连接到第二节点N2。例如，第三晶体管M3的控制端可以连接到第二节点N2，第三晶体管M3的第一极可以连接到第三节点N3，第三晶体管M3的第二极可以连接到第一电源端V1。例如，第一电容C1的第一端连接到第二节点N2(即，第五晶体管M5的第二极以及第三晶体管M3的控制极之间)，第一电容C1的第二端连接到第一电源端V1。例如，第六晶体管M6的控制极可以接收第二输出信号EM2，第六晶体管M6的第一极可以连接到发光元件110的第一端c1 (例如，OLED的正极端)，第六晶体管M6的第二极也连接到第三节点N3，即，连接到第三晶体管M3的第一极；发光元件110的第二端c2(例如，OLED的负极端)连接到第二电源端V2。例如，光感开关晶体管M7的控制极可以接收第一输出信号EM1，光感开关晶体管M7的第一极与光电感应电路130的感应信号输出端b1连接，光感开关晶体管M7的第二极也连接到第三节点N3，即，连接到第三晶体管M3的第一极。
例如，如图2c和图4a所示，光感开关晶体管M7的控制极和信号读取开关晶体管M10的控制极可以连接同一根输出信号线以接收相同的第一输出信号EM1，也可以连接至不同的输出信号线而二者施加的第一输出信号EM1同步。
例如，第一电源端V1和第二电源端V2之一为高压端，另一个为低压端。例如，第一电源端V1可以为电压源以输出恒定的正电压；而第二电源端V2可以为接地端。
例如，该4T1C型发光控制电路120的驱动方式是将像素的明暗(灰阶)经由四个TFT和第一电容C1来控制。在显示阶段，通过栅线施加扫描信号Gate，以导通第五晶体管M5，数据驱动电路通过数据线送入的发光数据电压V data1经由第五晶体管M5对第一电容C1充电，由此将发光数据电压V data1存储在第一电容C1中，且该存储的发光数据电压V data1可以控制第三晶体管M3的导通程度，由此控制流过第三晶体管M3的电流大小；第二输出信号EM2被施加到第六晶体管M6的控制极，以使得第六晶体管M6导通，同时使光感开关晶体管M7截止，从而第六晶体管M6可以接收流过第三晶体管M3的发光电流信号，并将该发光电流信号传输至发光元件110以驱动其发光，此流过第三晶体管M3的电流可以决定像素发光的灰阶。在光电感应阶段，第一输出信号EM1被施加到光感开关晶体管M7的控制极，以使得光感开关晶体管M7导通，同时使第六晶体管M6截止，从而光感开关晶体管M7可以接收从第三晶体管M3传输的预定电流，并将该预定电流传输至光电感应电路130以控制光电感应电路130输出感测电信号，从而实现触控检测和指纹识别的功能。该预定电流例如可以为恒定的预定电流。
例如，本公开实施例仅以发光控制电路120为4T1C电路进行说明，但是本公开实施例的发光控制电路120不限于4T1C电路。例如，根据实际应用需求，发光控制电路120还可以具备电学补偿功能，以提升包含该像素电路100 的显示面板的显示均匀度。例如，补偿功能可以通过电压补偿、电流补偿或混合补偿来实现，具有补偿功能的发光控制电路120例如可以为4T2C、6T1C以及其它具有电学补偿功能的发光控制电路120。
例如，发光控制电路120还可以包括发光补偿电路125。发光补偿电路125被配置为对发光驱动电路120进行补偿。发光补偿电路125可以为内部补偿电路，也可以为外部补偿电路。图4b示出了本公开一实施例提供的一种具备补偿功能的发光控制电路的示意性电路图。
例如，如图4b所示，该发光补偿电路125为内部补偿电路，其可以包括第一晶体管M1、第二晶体管M2、第四晶体管M4和第二电容C2，该发光补偿电路125可以补偿第三晶体管M3的阈值电压V th漂移。
图5a至图5d是图4b所示的发光控制电路的补偿方法的操作流程。需要说明的是，在图5a和5c中，在晶体管的位置处设置方块(□)表示该晶体管处于开启状态，在晶体管的位置处设置圆(○)则表示该晶体管处于截止状态。
例如，如图5a和5b所示，在重置阶段，扫描信号Gate、电源控制信号EM、第一输出信号EM1以及第二输出信号EM2均为高电平，而重置信号Reset为低电平，从而第一晶体管M1导通，其余晶体管全部处于截止状态。此时，第一晶体管M1将第四节点N4的电压重置为初始电压Vint。初始电压Vint例如为低电压信号。
例如，如图5c和5d所示，在补偿阶段，扫描信号Gate变为低电平，重置信号Reset变为高电平，电源控制信号EM、第一输出信号EM1以及第二输出信号EM2均保持高电平。此时，第二晶体管M2和第五晶体管M5导通，其余晶体管处于截止状态。由此，通过第五晶体管M5对第四节点N4进行充电，一直充电至第四节点N4的电压为V data1+V th为止，V data1为数据信号端Vdata输出的发光数据电压，V th为第三晶体管M3的阈值电压，该电压存储在第二电容C2中。此时，第三晶体管M3的控制极的电压为V data1+V th。
在之后的发光阶段，扫描信号Gate变为高电平，重置信号Reset和第一输出信号EM1保持为高电平，电源控制信号EM和第二输出信号EM2变为低电平。此时，第一晶体管M1、第二晶体管M2、第五晶体管M5处于截止状态，而第四晶体管M4和第六晶体管M6处于导通状态，同时第三晶体管(驱动晶体管)M3也处于导通状态。基于第三晶体管M3的饱和电流公式，可以得到流经第三晶体管M3的发光电流信号：
Iout＝K(V GS–V th) 2
＝K[V data1+V th–V 1–Vth] 2
＝K(V data1–V 1) 2
上述公式中V GS为第三晶体管M3的栅极和源极之间的电压差，V 1为第一电源端V1输出的第一电源电压信号，V th是第三晶体管M3的阈值电压。由上式中可以看到此时输出电流Iout已经不受第三晶体管M3的阈值电压Vth的影响，而只与第一电源端V1输出的第一电源电压信号V 1和发光数据电压V data1有关。而发光数据电压V data1由数据信号端Vdata直接传输，其与第三晶体管M3的阈值电压V th无关，这样就可以解决第三晶体管M3由于工艺制程及长时间的操作造成阈值电压V th漂移的问题，可以保证发光电流信号的准确性。
又例如，发光补偿电路125还可以为外部补偿电路，例如，可以包括感测电路部分以感测驱动晶体管的电学特性或发光元件的电学特性，具体构造可以参见常规设计，这里不再赘述。
例如，在本公开实施例中，通过在像素电路100中设置光电感应电路130，使得包含该像素电路100的显示面板具备触控检测和指纹识别功能；通过将发光控制电路120的第三端a3和光电感应电路130的感应信号输出端b1连接，使得光电感应电路130可以分时复用发光控制电路120输出的预定电流，由此可以优化像素电路100的结构布局。在本公开实施例中，通过在光电感应电路130中设置放大电路231，可以在优化电路布局的情况下保证或提升光电感应电路130的感测电信号的信噪比。
需要说明的是，光电感应电路可以被替换为其他需要利用恒流源工作的传感器电路，从而实现检测其他多种传感器信号。
本公开一实施例提供一种显示面板，该显示面板还具有触控功能或指纹识别功能等，因此可以使得采用该显示面板的电子装置功能更多样化，结构更紧凑等。
例如，如图6a所示，显示面板10包括阵列排列的多个像素单元11。为了清楚起见，图6a仅示例性的示出了两行和三列的像素单元11，但本公开的实施例不限于此，例如，根据实际应用需求，显示面板10可以包括1440行、900列的像素单元11。
例如，至少一个像素单元11包括上述任一所述的像素电路。如图6a所示，在像素单元11包括上述任一所述的像素电路的情况下，像素单元11可以包括 发光区211和光感区311。例如，如图6a所示，光感区311可以设置在行方向上相邻的两个发光区211之间，然而本公开的实施例不限于此，光感区311还可以设置在列方向上相邻的两个发光区211之间，或者相邻的四个发光区311之间。需要说明的是，发光区311和光感区211的排布方式、面积比例等可以根据实际应用需求进行设定，本公开的实施例对此不作具体限定。
例如，如图6b所示，光感区211可以包括光电感应电路，光电感应电路可以包括感光元件(例如，上述像素电路的实施例中的光电二极管PD)、放大电路(例如，上述像素电路的实施例中的源极跟随晶体管M8)和复位电路(例如，上述像素电路的实施例中的复位晶体管M9)等。发光区311可以包括发光元件(例如，上述像素电路的实施例中的发光元件EL)和发光控制电路，发光控制电路可以包括发光驱动电路(例如，上述像素电路的实施例中的第三晶体管M3)、发光选择电路(例如，上述像素电路的实施例中的第五晶体管M5)和电容(例如，上述像素电路的实施例中的第一电容C1)等。例如，在一个像素单元11内，光感区211可以包括多个感光元件，即多个感光元件可以对应一个发光元件，多个感光元件可以增大感测电信号，从而提高触控检测和/或指纹识别的精度。可以根据实际需求设置感光元件和发光元件的对应关系，本实施例对此不作限制。
例如，根据所需要的触控检测和/指纹识别的精度，可以在多个(例如十个)像素单元中任选一个像素单元，并在该像素单元中设置上述任一所述的像素电路；或者，为了实现像素级的触控检测和/或指纹识别的精度，显示面板10上所有像素单元11均可以包括上述任一所述的像素电路。又例如，显示面板10的至少一列像素单元11包括上述任一所述的像素电路，并且该至少一列像素单元11的每个光电感应电路可以共用同一根信号线，以减少信号线的数量，提高像素单元的开口率，通过该信号线例如可以分时读取一列像素单元11中的各个光电感应电路输出的感测电信号，以实现触控检测和/或指纹识别功能。
例如，显示面板10还可以包括输出选择电路。在触控和/或指纹识别阶段，输出选择电路被配置为输出第一输出信号，以控制显示面板10实现触控检测和/或指纹识别功能；在显示阶段，输出选择电路被配置为输出第二输出信号，以控制显示面板10实现正常显示功能。以图4a所示的像素电路为例。例如，若第一输出信号EM1为低电平，第二输出信号EM2为高电平，此时，光感开关晶体管M7导通，第六晶体管M6截止。发光控制电路120将数据信号端Vdata 提供的固定的信号读取电压转换成恒定的预定电流，然后经由光感开关晶体管M7被传输至光电感应电路，此时，信号线可以读取光电感应电路输出的感测电信号，从而显示面板10可以实现触控检测和/或指纹识别功能。例如，若第一输出信号EM1为高电平，第二输出信号EM2为低电平，此时，光感开关晶体管M7截止，第六晶体管M6导通。发光控制电路120将数据信号端Vdata提供的发光数据电压转换成发光电流信号，然后经由第六晶体管M6被传输至发光元件EL，从而显示面板10可以实现正常发光显示功能。
需要说明的是，输出选择电路的具体形式可以根据实际应用需求进行设定，本公开的实施例对此不作具体限定。
图7是本公开一实施例提供的显示面板的一个像素单元的截面结构示意图。
例如，显示面板10的一个像素单元可以包括设置在衬底基板60上的复位晶体管114(例如，上述像素电路的实施例中的复位晶体管M9)、感光元件112、发光开关晶体管115(例如，上述像素电路的实施例中的第六晶体管M6)和发光元件110。
例如，如图7所示，复位晶体管114为顶栅型晶体管，且可以包括有源层154、第一栅绝缘层GI1、栅极134、第二栅绝缘层GI2、层间绝缘层ILD和源极/漏极144。例如，感光元件112可以包括正极、负极以及设置在二者之间的光电感应层。感光元件112与复位晶体管114之间可以设置钝化层PVX，感光元件112的第二端可以通过贯穿钝化层PVX的过孔与复位晶体管114的源极或漏极144电连接，感光元件112的第一端可以从通过贯穿钝化层PVX和平坦层PLN的过孔并利用引线61引出，最终与偏置电压端电连接。由图7可知，感光元件112的两端可以通过过孔与背板电路连接，以实现电气连接。
例如，如图7所示，发光开关晶体管115也可以为顶栅型晶体管，且可以包括有源层155、第一栅绝缘层GI1、栅极135、第二栅绝缘层GI2、层间绝缘层ILD和源极/漏极145。发光元件110可以包括阴极72、阳极71、位于两者之间的发光层70以及像素界定层PDL。发光元件110和发光开关晶体管115之间可以设置钝化层PVX和平坦层PLN，发光元件110的阳极71可以通过贯穿钝化层PVX和平坦层PLN的过孔与发光开关晶体管115的源极或漏极145电连接。
例如，复位晶体管114和发光开关晶体管115的各层可以同时形成。由此 可以简化显示面板10的工艺流程。
例如，该像素单元还包括垫隔物PS，以保持显示面板10的均一性。垫隔物PS的材料可以为紫外(UV)硬化型的丙烯树脂等合适的材料。垫隔物PS的形状可以为柱状、球状等。
需要说明的是，为了清楚起见，图7所示的像素单元仅示出了复位晶体管114、感光元件112、发光开关晶体管115和发光元件110。像素单元还可以包括其他结构，像素单元例如还可以包括上述像素电路的实施例中的其余器件，例如，信号线、光感开关电路等。在此不再赘述。
本公开一实施例提供一种根据上述任一所述的像素电路的驱动方法。
例如，如图8所示，该像素电路的驱动方法可以包括以下操作：
S210：在显示阶段，发光控制电路驱动发光元件发光；
S220：在光电感应阶段，从发光控制电路的第三端输出预定电流至光电感应电路，然后读取光电感应电路的输出信号。
例如，在显示阶段，断开光电感应电路和发光控制电路之间的电连接，例如，使第六晶体管导通，而光感开关晶体管截止，从而使发光控制电路产生的发光电流信号输出至发光元件，以驱动发光元件发光。
例如，在光电感应阶段，断开发光元件和发光控制电路之间的电连接，例如，使第六晶体管截止，而光感开关晶体管导通，从而使发光控制电路产生的预定电流输出至光电感应电路，即可通过例如信号线读取光电感应电路的输出信号，从而实现触控检测和/或指纹识别功能。
例如，可以包括多个光电感应阶段，且使发光控制电路的第三端输出的预定电流在多个光电感应阶段均相同。
上述操作并没有先后顺序，也并非要求在每个显示阶段都需要伴随一个光电感应阶段，在满足触控时间精度的情况下，可以为每两个或更多个显示阶段设置一个光电感应阶段，由此减少功耗。
例如，驱动该像素电路的时序图可以根据实际需求进行设定，本公开的实施例对此不作具体限定。例如，图9b是图9a所示的像素电路的驱动方法的示例性时序图。例如，如图9b所示光电感应阶段的时间长度小于显示阶段的时间长度，但本公开的实施例不限于此。例如，根据实际应用需求，光电感应阶段的时间长度与显示阶段的时间长度可以相等；光电感应阶段的时间长度也可以等于显示阶段的时间长度的二分之一或者十分之一。
例如，如图9a和图9b所示，在一个示例中，显示阶段可以进一步包括第一重置阶段RT1、补偿阶段CT以及发光阶段LT。
在第一重置阶段RT1，扫描信号Gate、电源控制信号EM、第一输出信号EM1、第二输出信号EM2以及复位信号RST1均为高电平，重置信号Reset为低电平，从而第一晶体管M1导通，其余晶体管全部处于截止状态。此时，第一晶体管M1将第三节点N3的电压重置为初始电压Vint。初始电压Vint为低电压信号。
在补偿阶段CT，扫描信号Gate变为低电平，重置信号Reset变为高电平，电源控制信号EM、第一输出信号EM1、第二输出信号EM2以及复位信号RST1均保持高电平。此时，第二晶体管M2和第五晶体管M5导通，其余晶体管处于截止状态。由此，通过第五晶体管M5对第三节点N3进行充电，一直充电至第三节点N3的电压为V data1+V th为止，V data1为数据信号端Vdata输出的发光数据电压，V th为第三晶体管M3的阈值电压，该电压存储在第二电容C2中。此时，第三晶体管M3的控制极的电压为V data1+V th。
在发光阶段LT，扫描信号Gate变为高电平，第二输出信号EM2和电源控制信号EM变为低电平，第一输出信号EM1、重置信号Reset以及复位信号RST1保持高电平。此时，第三晶体管T3、第四晶体管M4和第六晶体管M6导通，其余晶体管处于截止状态。由此，通过第六晶体管M6将流经第三晶体管T3的发光电流信号传输至发光元件EL，从而驱动发光元件EL发出与发光数据电压相对应的光。
基于晶体管的饱和电流公式，可以得到流经第三晶体管M3的发光电流信号：
Iout＝K(V GS–V th) 2
＝K[V data1+V th–V 1–Vth] 2
＝K(V data1–V 1) 2
由上式可以看到此时输出电流Iout已经不受第三晶体管M3的阈值电压V th的影响。即，驱动发光元件EL发光的电流Iout不受第三晶体管M3的阈值电压V th的影响，由此，发光控制电路可以补偿第三晶体管M3的阈值电压V th漂移。
在发光阶段，第一输出信号EM1保持高电平，从而光感开关晶体管M7处于截止状态，即发光控制电路产生的发光电流信号无法传输到光电感应电 路，由此，信号线无法读取光电感应电路输出的感测电信号，像素电路实现正常显示功能。
例如，如图9a和图9b所示，在一个示例中，光电感应阶段包括第二重置阶段RT2、补偿复位阶段CRT以及信号读取阶段SRT。
例如，第二重置阶段RT2与显示阶段中的第一重置阶段RT1相同，在此不再赘述。
在补偿复位阶段CRT，扫描信号Gate和复位信号RST1变为低电平，重置信号Reset变为高电平，电源控制信号EM、第一输出信号EM1以及第二输出信号EM2均保持高电平。此时，第二晶体管M2和第五晶体管M5导通，由此，通过第五晶体管M5对第三节点N3进行充电，一直充电至第三节点N3的电压为V data2+V th为止，V data2为数据信号端Vdata输出的信号读取电压，V th为第三晶体管M3的阈值电压，该电压存储在第二电容C2中。此时，第三晶体管M3的控制极的电压为V data2+V th。同时，复位晶体管M9导通，以通过复位晶体管M9的将复位电压写入在第一节点N1上，复位电压可以为参考电压，参考电压可以为高电平信号。在此阶段内，其余晶体管处于截止状态。
例如，该信号读取电压V data2在各个光电感应阶段均保持不变，从而在发光控制电路的第三端获得稳定的预定电流；或者该信号读取电压V data2在各个光电感应阶段根据需要变化，从而在发光控制电路的第三端获得需要的预定电流。
在信号读取阶段SRT，扫描信号Gate和复位信号RST1变为高电平，电源控制信号EM和第一输出信号EM1变为低电平，重置信号Reset和第二输出信号EM2保持高电平。此时，第三晶体管T3和第四晶体管M4导通，发光控制电路将数据信号端Vdata传输的信号读取电压V data2转换为恒定的预定电流并传输至其第三端a3，而光感开关晶体管M7导通，因此发光控制电路的第三端a3输出的预定电流可以经由光感开关晶体管M7传输至光电感应电路的感应信号输出端b1，从而感光元件PD产生的感测电信号可以通过源极跟随晶体管M8跟随至感应信号输出端b1，然后通过信号线140读取该感测电信号。
需要说明的是，图9b中的信号读取阶段SRT仅表示读取一个子像素中的光电感应电路的感测电信号时的时序。例如，每个光电感应阶段可以包括多个信号读取阶段SRT，以分时读取多个不同的子像素中的光电感应电路的感测电信号。
在光电感应阶段，第二输出信号EM2保持高电平，从而第六晶体管M6处于截止状态，即发光控制电路产生的预定电流无法传输到发光元件EL，由此，发光元件EL不发光，像素电路实现触控检测和/或指纹识别功能。
本公开至少一个实施例提供的像素电路中的光电感应电路采用主动式检测方法，且分时复用发光控制电路产生的恒定的预定电流，从而实现高精度的感测电信号检测、提高感测电信号的信噪比；同时减少了光电感应电路所占用的空间，优化了像素电路的结构布局，节省制造成本，提升产品的附加值。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本发明的保护范围由所附的权利要求确定。

Claims (15)

  1. 一种像素电路，包括：发光元件、发光控制电路和光电感应电路，其中，
    所述发光控制电路被配置为驱动所述发光元件发光且包括第一端、第二端和第三端，所述第一端用于与第一电源端连接，所述第二端用于与所述发光元件连接；
    所述发光元件的一端用于与所述发光控制电路的第二端连接，另一端用于与第二电源端连接；
    所述光电感应电路被配置为感测入射到其上的光线且包括感应信号输出端和感应电压接入端，所述感应电压接入端用于与所述第二电源端连接，所述感应信号输出端用于与所述发光控制电路的第三端连接。
  2. 根据权利要求1所述的像素电路，还包括信号线，
    其中，所述信号线设置为接收所述光电感应电路的感应信号输出端输出的信号。
  3. 根据权利要求2所述的像素电路，还包括信号读取开关电路，
    其中，所述信号线包括第一部分和第二部分，所述信号读取开关电路设置在所述第一部分和所述第二部分之间，且被配置为控制将所述第一部分和所述第二部分导通或断开，所述第一部分用于与所述光电感应电路的感应信号输出端连接。
  4. 根据权利要求1-3任一所述的像素电路，其中，所述发光控制电路包括：
    发光驱动电路，被配置为控制在所述第一端和所述第二端之间通过的用于驱动所述发光元件发光的电流且用于控制所述第一端和所述第三端之间通过的电流；
    发光选择电路，被配置为将数据信号写入到所述发光驱动电路的控制端；
    电容，被配置为存储所述数据信号并将其保持在所述发光驱动电路的控制端。
  5. 根据权利要求4所述的像素电路，所述发光控制电路还包括光感开关电路，
    其中，所述光感开关电路设置在所述发光驱动电路与所述光电感应电路之 间，且被配置为控制将所述发光驱动电路与所述光电感应电路导通或断开。
  6. 根据权利要求4或5所述的像素电路，其中，所述发光控制电路还包括发光补偿电路，被配置为对所述发光驱动电路进行补偿。
  7. 根据权利要求4-6任一所述的像素电路，其中，所述发光控制电路还包括发光开关电路，
    所述发光开关电路设置在所述发光驱动电路和所述发光元件之间，且被配置为控制将所述发光驱动电路和所述发光元件导通或断开。
  8. 根据权利要求1-7任一所述的像素电路，其中，所述光电感应电路包括感光元件和放大电路，
    所述感光元件被配置为将入射到其上的光线转换为感测电信号，所述放大电路被配置为放大所述感光元件输出的所述感测电信号。
  9. 根据权利要求8所述的像素电路，其中，所述放大电路包括源极跟随晶体管，所述源极跟随晶体管包括控制极、第一极和第二极，
    所述感光元件的一端连接到偏置电压端而另一端设置为控制所述源极跟随晶体管的控制极，所述源极跟随晶体管的第一极连接到所述光电感应电路的感应信号输出端，所述源极跟随晶体管的第二极连接到所述光电感应电路的感应电压接入端。
  10. 根据权利要求8或9所述的像素电路，其中，所述光电感应电路还包括复位电路，
    所述复位电路的输出端连接到所述感光元件和所述放大电路之间，且被配置为将所述感光元件的输出信号进行复位。
  11. 根据权利要求8-10任一所述的像素电路，其中，所述光电感应电路还包括缓冲开关电路，
    所述缓冲开关电路设置在所述感光元件和所述放大电路之间且被配置为控制将所述感光元件与所述放大电路导通或断开。
  12. 一种显示面板，包括阵列排列的像素单元，其中，至少一个所述像素单元包括根据权利要求1-11任一所述的像素电路。
  13. 一种根据权利要求1-11任一所述的像素电路的驱动方法，包括：
    在显示阶段，所述发光控制电路驱动所述发光元件发光；
    在光电感应阶段，从所述发光控制电路的第三端输出预定电流至所述光电感应电路，然后读取所述光电感应电路的输出信号。
  14. 根据权利要求13所述的驱动方法，其中，在所述显示阶段，断开所述发光控制电路和所述光电感应电路之间的电连接。
  15. 根据权利要求13或14所述的驱动方法，包括多个光电感应阶段，使得所述发光控制电路的第三端输出的所述预定电流在所述多个光电感应阶段均相同。
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