WO2016046692A1 - マトリクス装置とその特性の測定方法、駆動方法 - Google Patents
マトリクス装置とその特性の測定方法、駆動方法 Download PDFInfo
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Definitions
- This disclosure relates to an apparatus that performs processing such as display and detection by a current flowing through an electric element included in the matrix device.
- each pixel is provided with a transistor (drive transistor) that controls a current value supplied to the light emitting element in accordance with an image signal. This is reflected in the luminance of the light emitting element.
- a transistor drive transistor
- the characteristics of the driving transistor of each pixel are measured in advance, and an image signal corrected based on the measured characteristics is applied to each pixel. The display device to be supplied is described.
- the current flowing through each driving transistor is measured when the potential of the driving transistor of a pixel in a certain row is set to a specific value such that the transistor operates in a saturation region. Such an operation is sequentially performed on the driving transistors of the pixels in all rows.
- the same problem is not limited to a display device, and there are components (pixels and the like) arranged in a matrix, and the current and current flowing through one or more electric elements (transistors and the like) existing in each component Common to all devices that perform processing such as measurement, detection, and computation.
- a novel method for measuring current characteristics of electric elements of a matrix device a novel device to which such a measurement method can be applied, or a method for setting and manufacturing a device using such a measurement method.
- each component in a device that has components arranged in a matrix and wirings, and each component can supply currents to the wirings by electric elements included in the components, each component can supply currents to the wirings.
- the current direction of each of the N components is individually set, and the current flowing through the wiring is measured N times.
- the direction of the current flowing through the electric element can be changed.
- the combinations of the current directions of the N components are different for each of the N measurements.
- the magnitude of the current flowing through each electrical element is calculated based on the combination of the current obtained by N measurements and the direction of the current of N measurements.
- each of the components has N components, a first wiring, and a second wiring that intersects the first wiring, and each of the components supplies current to the first wiring and changes its direction.
- Each of the components includes a potential supply circuit, a transistor, and a capacitor, and at one point, one of the source and the drain of the transistor is equal to the potential of the first wiring.
- the other of the source and the drain of the transistor is designed to be equal to the potential of the third wiring, and the second of the case where each of the components supplies current in the first direction to the first wiring.
- the potential of the wiring is designed to be different from the potential of the second wiring when each of the components supplies a current in the second direction opposite to the first direction to the first wiring.
- the current direction of each of the N components is individually set, the process of measuring the current flowing through the first wiring N times, and the currents I [1] through I obtained from the N measurements.
- the magnitude of the current supplied to the wiring by the component is calculated by calculating the magnitude of the current flowing through each electrical element based on the combination of the current I [N] and the current direction of each component in N measurements.
- the method including the step of obtaining the current I [1] to the current I [N] the combinations of the current directions of the N components are different in each of the N measurements, and the magnitude of the current flowing through each electric element is determined. ] Is used for the measurement method.
- each of the components supplies current to one of the M first wirings and can change the direction thereof.
- Each of the components includes a potential supply circuit, a transistor, a capacitor, , And at some point, in each of the components, the other of the source and drain of the transistor is equal to the potential of the second wiring so that one of the source and drain of the transistor is equal to the potential of the first wiring.
- the potential of the second wiring is that of the component.
- the N second wirings are individually set to measure the current flowing through the M first wirings N times, and the m-th column (m is an integer from 1 to M) obtained by N measurements. ) Based on the combination of the current I [1, m] to the current I [N, m] of the first wiring and the potentials of the N second wirings in N measurements. Calculating the magnitude of the current flowing through each of the electrical elements to determine the magnitude of the current supplied to the first wiring corresponding to each component, and N in each of N measurements.
- Each combination of potentials of the second wiring of the book is different, and The magnitude of the current flowing through the child, a measurement method and calculating using the polynomial of the current I [1, m] or current I [N, m].
- the polynomials of the currents I [1, m] to I [N, m] include the inverse matrix of the N-row square matrix A and the currents I [1, m] to I [N, m] as elements.
- N-row and M-column matrix products can be expressed, and the elements of the inverse matrix of the N-row square matrix A may not be zero.
- the elements of the inverse matrix of the N-row square matrix A may all be equal.
- the third wiring further includes N third wirings, and each of the third wirings is designed to be equal to the potential of the other electrode of each capacitor of the component.
- the potential of the third wiring is the third wiring in the case where each of the components supplies the current in the second direction to the first wiring.
- It may be a measurement method characterized by being performed using an apparatus designed to be different from the potential.
- it is a matrix device set so that any one of the measurement methods described above can be executed, or the matrix device is a display device or a light detection device.
- the matrix device driving method is characterized in that data to be input or output is corrected based on a current value of a component measured by any one of the above measuring methods.
- a node refers to any part on a wiring provided to electrically connect electrical elements.
- FIG. 1A shows a 7 ⁇ 8 matrix device.
- a plurality of pixels 11 are provided in a matrix.
- a pixel in the seventh row and the eighth column is represented as a pixel 11 [7, 8].
- the plurality of signal lines Sig and the signal lines CL are provided so as to intersect each other.
- the signal line in the first row is expressed as a signal line Sig [1]
- the signal line in the first column is expressed as a signal line CL [1].
- the above description relates to a 7 ⁇ 8 matrix device, but it can also be applied to a matrix device of any scale. That is, in the matrix device with N rows and M columns, the matrix A is an N row square matrix, and the matrix / and the matrix ⁇ are N rows and M columns.
- the matrix device of FIG. 1A is divided into, for example, the first to fourth rows and the fourth to seventh rows, and the same measurement as described above is performed. Good.
- the fourth row is measured twice, and two results are obtained. Only one of the results may be adopted, or the average value may be used as the result.
- the influence of noise is particularly large, and it is not possible to determine whether or not an abnormal value is due to accidental noise in a single measurement.
- seven measurements are required to measure each row once, and this is repeated a plurality of times.
- the current values i [1, 1] to i [7, 8] can be expressed as polynomials.
- respective values can be obtained.
- the matrix A is the third matrix A 3 , the amount of calculation can be reduced by performing a special calculation as described below.
- the calculation becomes enormous as the number of rows of the matrix device increases (the number of terms becomes four times when the number of rows becomes double, and the calculation needs to be four times or more). .
- the amount of calculation is almost proportional to the number of rows, so the more rows, the more advantageous.
- the signal line Sig may be a combination of not only one wiring but a plurality of wirings.
- one signal line Sig may be constituted by two wirings.
- the source of the transistor 14 at that time (the potential of the second signal line SigB [1] or the potential of the signal line CL [1]
- the potential difference between the lower one) and the gate can be constant regardless of the direction of the current.
- the potential of the gate of the transistor 14 is V1
- the potential of the source in this case, the second signal line SigB [1] having a low potential
- the potential difference between the gate and the source is V1 ⁇ VL.
- the potential difference between the gate and the source is made smaller than the potential difference V0 ⁇ VL between the drain and source.
- the current value between the drain and the source is ideally the potential difference between the gate and the source. Only depending on the potential difference between the drain and the source.
- the pixel 11 [1,1] becomes the signal line CL [1]. Current can be supplied and its direction can be changed.
- the same measurement may be performed by changing the potential difference between the gate and source.
- the current between the source and drain of the transistor 14 is determined according to the potential of the gate, as a result, the current value i varies depending on the direction of the current I.
- the current value is proportional to the square of the potential difference between the gate and the source, and therefore decreases by about 2%. Therefore, when the circuit shown in FIG. 3A is used, the required measurement accuracy and parasitic capacitance other than the capacitor 16 need to be considered. Note that the gate capacitance of the transistor 14 is considered to be substantially constant regardless of the potential of the second signal line SigB, and thus need not be considered.
- the potential of the signal line SigA [1] is It is good. Then, after the gate of the transistor 14 is brought into an electrically floating state, the potential of the signal line SigA [1] is set to VM or VM + V0 ⁇ VL, as shown in FIG. And In any case, since the amplitude of the signal line SigA [1] is the same, even if parasitic capacitance exists, the influence is the same. However, in this method, for example, the potential of the gate of the transistor 14 when the potential of the signal line SigA [1] is VM cannot be accurately known.
- all ⁇ is 1, and vice versa.
- -0.98, -0.99, -0.97, -0.99, -0.99, -0.98, -0.99, -0.97 The matrix A 3 is It is corrected as follows.
- FIG. 4A illustrates an example of display pixels used in a display device in which light-emitting elements (light-emitting diodes) are provided in a matrix for each pixel.
- the display pixel 21 [1, 1] in the first row and first column of the display device includes a selection transistor 22, a capacitor 23, a driving transistor 24, a transistor 25, a transistor 26, and a light emitting element 27.
- the capacitor 23, the driving transistor 24, and the transistor 25 correspond to the capacitor 16, the transistor 14, and the switch 17 in FIG.
- the transistor 25 is controlled by the signal line SigC [1]
- the transistor 26 is controlled by the signal line SigD [1].
- the selection transistor 22 is controlled by the row selection line SL [1] and applies the potential of the data line DL [1] to the gate of the driving transistor 24 when it is on, and holds that potential in the off state. This corresponds to the potential supply circuit 15 in FIG.
- the potential of the signal line CL [1] or the second signal line SigB [1] is set to an appropriate value, or the potential of the cathode of the light emitting element 27 is set to an appropriate value, a current is supplied to the light emitting element 27. It can be prevented from flowing.
- the potential of the signal line CL [1] or the second signal line SigB [1] is set so that the potential difference between the anode and the cathode of the light emitting element 27 becomes smaller than the threshold value of the light emitting element 27.
- the cathode potential of the light emitting element 27 is set so that the potential difference between the anode and the cathode of the light emitting element 27 is smaller than the threshold value of the light emitting element 27 or is reverse biased.
- the first signal line SigA and the second signal line SigB in other rows are set simultaneously. For example, the pattern of the second row of the Hadamard matrix is realized. Further, before or after this, the transistor 25 is turned on. Then, the current I flowing through the signal line CL is measured for each column.
- FIG. 5A illustrates another example of display pixels used in a display device in which light-emitting elements are provided in a matrix for each pixel.
- the signal line SigA [1] and the signal line SigB [1] are designed to be parallel to the row selection line SL [1].
- the signal line Sig [1] may be designed to intersect the row selection line SL [1].
- the signal line CL [1] is the row selection line SL [ 1]. Since the signal line CL [1] is used as a wiring for supplying current, the signal line CL [1] is irrelevant to the selection of a row at the time of data input, and such a modification is possible.
- the signal line SigC may be configured such that a signal from a driver (row selection driver) that performs row selection can also be input.
- the potential of the second signal line SigB [1] is preferably equal to the potential of the signal line CL [1].
- it is set to VH or VL in accordance with the code signal as shown in FIGS. 3 (B) and 3 (C).
- the accuracy is affected.
- C1 is 1% larger than C2
- the potential of the gate of the transistor 14 when the potential of the second signal line SigB is VH is about 1% higher than the ideal state. That is, the potential difference between the gate and the source is increased by about 1%.
- the current between the source and the drain of the transistor 14 is determined according to the gate potential, the current value i varies depending on the direction of the current I as a result.
- the transistor 14 is in an ideal saturation state, the current value is proportional to the square of the potential difference between the gate and the source, and thus increases by about 2%. Therefore, when the circuit shown in FIG. 7A is used, the required measurement accuracy and the processing accuracy of the capacitor 16 and the capacitor 18 need to be considered.
- the gate potential of the drive transistor 24 it is necessary that the gate potential of the drive transistor 24 be as described above with sufficient accuracy. First, it is required to finely control the potential of the data line DL [1]. Furthermore, it is required that the voltage fluctuation when the selection transistor 22 is turned off is sufficiently small. The influence of the gate potential of the driving transistor 24 on the current value is as described above.
- the selection transistor 22 When changing the direction of current in this circuit, the selection transistor 22 is turned on and the data line DL [1] is set to an appropriate potential. That is, if the voltage of the second signal line SigB [1] is VL, the potential of the data line DL [1] is V1, and the potential of the second signal line SigB [1] is VH. The potential of the data line DL [1] is set to V1 + V0 ⁇ VL. The potentials of other data lines DL are set according to the potential of the corresponding second signal line SigB. Since the selection transistor 22 is on, the gate potential of the drive transistor 24 is almost equal to the potential of the data line DL [1].
- FIG. 9A illustrates a modification example of the light detection pixel 31 [1,1] illustrated in FIG. 6A.
- FIG. 6A illustrates the first signal line SigA [ 1] has a structure in which a fixed potential is maintained. Note that a structure without the capacitor 33 may be used.
- the reset transistor 32 may be turned on. Since the reset transistor 32 is on, the potential of the gate of the amplification transistor 34 is almost equal to the potential of the signal line SigF [1], and the amplification transistor due to the leakage current of the reset transistor 32 during the period in which the reset transistor 32 is off. Thus, fluctuations in the potential of the gate 34 can be prevented.
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Abstract
Description
図1(A)には、7行8列のマトリクス装置を示す。ここで、複数の画素11がマトリクス状に設けられ、例えば、第7行第8列の画素は、画素11[7,8]と表記する。また、複数の信号線Sigと信号線CLが互いに交差するように設けられる。例えば、第1行の信号線は、信号線Sig[1]と表記し、第1列の信号線は、信号線CL[1]と表記する。
12 符号信号ドライバ
13 デマルチプレクサ
14 トランジスタ
15 電位供給回路
16 容量素子
17 スイッチ
18 容量素子
21 表示画素
22 選択トランジスタ
23 容量素子
24 駆動トランジスタ
25 トランジスタ
26 トランジスタ
27 発光素子
31 光検出画素
32 リセットトランジスタ
33 容量素子
34 増幅トランジスタ
35 トランジスタ
36 トランジスタ
37 光検出素子
CL 信号線
SL 行選択線
DL データ線
Sig 信号線
SigA 信号線
SigB 信号線
SigC 信号線
SigD 信号線
SigE 信号線
SigF 信号線
i 電流値
I 電流
Claims (12)
- N個のコンポーネントと、第1の配線と、第1の配線と交差する第2の配線と、を有し、
コンポーネントのそれぞれが、電流を第1の配線に供給し、その向きを変更することができ、
コンポーネントのそれぞれは、電位供給回路と、トランジスタと、容量素子と、を有し、
ある時点において、トランジスタのソースおよびドレインの一方は、第1の配線の電位と等しくなるように、トランジスタのソースおよびドレインの他方は、第3の配線の電位と等しくなるように設計されており、
コンポーネントのそれぞれが、第1の向きの電流を第1の配線に供給する場合の第2の配線の電位は、コンポーネントのそれぞれが、第1の向きと逆の第2の向きの電流を第1の配線に供給する場合の第2の配線の電位と異なるように設計されている装置において、
N個のコンポーネントのそれぞれの電流の向きを個別に設定して、第1の配線を流れる電流をN回測定する過程と、
N回の測定で得られた電流I[1]乃至電流I[N]と、N回の測定における各コンポーネントの電流の向きの組み合わせをもとに、各電気素子を流れる電流の大きさを算出することで、コンポーネントが配線に供給する電流の大きさを求める過程と、を有する方法において、
N回の測定それぞれにおいてN個のコンポーネントの電流の向きの組み合わせが異なり、各電気素子を流れる電流の大きさを、電流I[1]乃至電流I[N]の多項式を用いて算出することを特徴とする測定方法。 - N行M列(N、Mは2以上の整数)のマトリクス状に配置されたコンポーネントと、M本の第1の配線と、第1の配線と交差するN本の第2の配線と、を有し、
コンポーネントのそれぞれが、M本の第1の配線の一に電流を供給し、その向きを変更することができ、
コンポーネントのそれぞれは、電位供給回路と、トランジスタと、容量素子と、を有し、
ある時点において、コンポーネントのそれぞれにおいて、トランジスタのソースおよびドレインの一方は、第1の配線の電位と等しくなるように、トランジスタのソースおよびドレインの他方は、第2の配線の電位と等しくなるように設計されており、
コンポーネントのそれぞれが、第1の向きの電流を第1の配線に供給する場合の第2の配線の電位は、コンポーネントのそれぞれが、第1の向きと逆の第2の向きの電流を第1の配線に供給する場合の第2の配線の電位と異なるように設計されている装置において、
N本の第2の配線のそれぞれの電位を個別に設定して、M本の第1の配線を流れる電流をそれぞれN回測定する過程と、
N回の測定で得られた第m列(mは1以上M以下の整数)の第1の配線の電流I[1,m]乃至電流I[N,m]と、N回の測定におけるN本の第2の配線のそれぞれの電位の組み合わせをもとに、第m列の各電気素子を流れる電流の大きさを算出することで、それぞれのコンポーネントが対応する第1の配線に供給する電流の大きさを求める過程と、を有する方法において、
N回の測定それぞれにおいてN本の第2の配線のそれぞれの電位の組み合わせが異なり、第m列の各電気素子を流れる電流の大きさを、電流I[1,m]乃至電流I[N,m]の多項式を用いて算出することを特徴とする測定方法。 - 請求項2において、
電流I[1,m]乃至電流I[N,m]の多項式は、N行正方行列Aの逆行列と、電流I[1,m]乃至電流I[N,m]を要素とするN行M列の行列の積で表現でき、
N行正方行列Aの逆行列の要素はいずれも0でないことを特徴とする測定方法。 - 請求項3において、N行正方行列Aの逆行列の要素の大きさはすべて等しいことを特徴とする測定方法。
- 請求項3において、N行正方行列Aがアダマール行列であることを特徴とする測定方法。
- 請求項3において、N行正方行列Aが循環行列であることを特徴とする測定方法。
- 請求項3において、Nが4の倍数であり、N行正方行列Aが任意の行の要素の和が2または−2であることを特徴とする測定方法。
- さらに、N本の第3の配線を有し、
第3の配線のそれぞれは、コンポーネントのそれぞれの容量素子の他の電極の電位と等しくなるように設計されており、
コンポーネントのそれぞれが、第1の向きの電流を第1の配線に供給する場合の第3の配線の電位は、コンポーネントのそれぞれが、第2の向きの電流を第1の配線に供給する場合の第3の配線の電位と異なるように設計されている装置を用いておこなわれることを特徴とする請求項1乃至請求項7のいずれか一に記載の測定方法。 - コンポーネントのそれぞれが、第1の向きの電流を第1の配線に供給する場合のコンポーネントのそれぞれのトランジスタのゲートの電位は、コンポーネントのそれぞれが、第2の向きの電流を第1の配線に供給する場合のものと異なるように設計されている装置を用いておこなわれることを特徴とする請求項1乃至請求項7のいずれか一に記載の測定方法。
- 請求項1の測定方法が実行できるように設定されたマトリクス装置。
- 表示装置もしくは光検出装置である請求項10に記載のマトリクス装置。
- 請求項1の測定方法で測定されたコンポーネントの電流値をもとに入力あるいは出力するデータを補正することを特徴とするマトリクス装置の駆動方法。
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