WO2018214201A1 - 微发光二极管的转移设备及转移方法 - Google Patents

微发光二极管的转移设备及转移方法 Download PDF

Info

Publication number
WO2018214201A1
WO2018214201A1 PCT/CN2017/089260 CN2017089260W WO2018214201A1 WO 2018214201 A1 WO2018214201 A1 WO 2018214201A1 CN 2017089260 W CN2017089260 W CN 2017089260W WO 2018214201 A1 WO2018214201 A1 WO 2018214201A1
Authority
WO
WIPO (PCT)
Prior art keywords
emitting diode
micro light
metal adhesion
liquid
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/089260
Other languages
English (en)
French (fr)
Inventor
卢马才
姚江波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US15/551,282 priority Critical patent/US10367117B2/en
Publication of WO2018214201A1 publication Critical patent/WO2018214201A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a transfer device and a transfer method for a micro light emitting diode.
  • Flat display devices are widely used in various consumer electronics such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers, etc. due to their high image quality, power saving, thin body and wide application range. Products have become the mainstream in display devices.
  • a micro LED display is a display that realizes image display by using a high-density and small-sized LED array integrated on one substrate as a display pixel. As with a large-sized outdoor LED display, each pixel can be addressed. It can be seen as a miniature version of the outdoor LED display, which reduces the pixel distance from millimeter to micrometer.
  • the Micro LED display is the same as the Organic Light-Emitting Diode (OLED) display. Light-emitting display, but Micro LED display has the advantages of better material stability, longer life, no image imprinting than OLED display, and is considered to be the biggest competitor of OLED display.
  • the micro-light-emitting diode In the fabrication process of the micro-light-emitting diode display panel, the micro-light-emitting diode must first be grown on the original substrate (such as a sapphire-based substrate) by molecular beam epitaxy, and the display panel must also be used to make the micro-light-emitting diode device original.
  • the substrate is transferred to a receiving substrate for forming a display panel, and is arranged as a display array. Specifically, a micro light emitting diode is formed on the original substrate, and then the micro light emitting diode is removed from a laser lift-off (LLO) method.
  • LLO laser lift-off
  • the original substrate is peeled off and a transfer head made of a material such as polydimethylsiloxane (PDMS) is used, such as adsorbing the micro light-emitting diode from the original substrate to a predetermined position on the receiving substrate.
  • a transfer head made of a material such as polydimethylsiloxane (PDMS) is used, such as adsorbing the micro light-emitting diode from the original substrate to a predetermined position on the receiving substrate.
  • PDMS polydimethylsiloxane
  • the transfer head for micro-light-emitting diode transfer usually performs micro-light-emitting diode transfer by electrostatically adsorbing the micro-light-emitting diode, and the method has strict requirements on the gap between the transfer head and the object to be transferred. The deviation of the transfer gap will cause the transfer to fail and cause display panel defects.
  • the difficulty of transferring the photodiode improves the transfer efficiency of the micro-light-emitting diode.
  • Another object of the present invention is to provide a method for transferring a micro light emitting diode, which can reduce the difficulty of transferring the micro light emitting diode and improve the transfer efficiency of the micro light emitting diode.
  • the present invention provides a micro light emitting diode transfer device, comprising: a body, a liquid discharge module disposed on the body, a cooling module, and a heating module;
  • the liquid discharge module is configured to discharge a metal adhesion liquid to the micro light emitting diode to be transferred;
  • the cooling module is configured to cool the metal adhesion liquid on the micro light-emitting diode to be transferred, so that the metal adhesion liquid is solidified, and the body and the micro light-emitting diode to be transferred are bonded together;
  • the heating module is configured to heat the solidified metal adhesion liquid to melt the metal adhesion liquid, and separate the body and the micro light-emitting diode to be transferred.
  • the body comprises: a plurality of transfer heads arranged in sequence, each of which has a liquid discharge port at the bottom thereof, and the liquid discharge module discharges the metal adhesion liquid to the micro light-emitting diode to be transferred through the liquid discharge port.
  • a blowing hole is disposed between each pair of adjacent transfer heads, and the cooling module blows outward through the blowing hole to cool the metal adhesion liquid on the micro light emitting diode to be transferred.
  • Each of the transfer heads is provided with a resistance heating body, and the heating module heats the solidified metal adhesion liquid by energizing the resistance heating body.
  • the gas blown by the blow hole is helium.
  • the invention provides a method for transferring a micro light emitting diode, comprising the following steps:
  • Step S1 providing a transfer substrate, wherein the transfer substrate is provided with a micro light-emitting diode;
  • Step S2 providing a micro-light-emitting diode transfer device
  • the micro-light-emitting diode transfer device includes: a body, a liquid discharge module disposed on the body, a cooling module, and a heating module;
  • Step S3 the liquid discharge module discharges a metal adhesion liquid to the micro light emitting diode, and the cooling module cools the metal adhesion liquid discharged from the liquid discharge module, so that the metal adhesion liquid is solidified, and the body and the micro light emitting diode are adhered.
  • Step S4 providing a receiving substrate, the transfer device of the micro light emitting diode moves the micro light emitting diode to a predetermined bonding position on the receiving substrate, and the heating module heats the solidified metal adhesion liquid, so that The metal adhesion liquid melts, separating the body and the micro light emitting diode, thereby transferring the micro light emitting diode onto the receiving substrate.
  • the body comprises: a plurality of transfer heads arranged in sequence, each of which has a liquid discharge port at the bottom thereof, and in step S3, the liquid discharge module discharges the metal adhesion liquid to the micro light-emitting diode through the liquid discharge port.
  • Each pair of adjacent transfer heads is provided with a blowing hole.
  • the cooling module blows the air through the blowing hole to cool the metal adhesion liquid discharged from the liquid discharging module.
  • Each of the transfer heads is provided with a resistance heating body.
  • the heating module heats the cured metal adhesion liquid by energizing the resistance heating body.
  • the gas blown by the blow hole in the step S3 is helium gas.
  • the invention also provides a transfer device for a micro light emitting diode, comprising: a body, a liquid discharge module disposed on the body, a cooling module and a heating module;
  • the liquid discharge module is configured to discharge a metal adhesion liquid to the micro light emitting diode to be transferred;
  • the cooling module is configured to cool the metal adhesion liquid on the micro light-emitting diode to be transferred, so that the metal adhesion liquid is solidified, and the body and the micro light-emitting diode to be transferred are bonded together;
  • the heating module is configured to heat the solidified metal adhesion liquid to melt the metal adhesion liquid, and separate the body and the micro light-emitting diode to be transferred;
  • the body includes: a plurality of transfer heads arranged in sequence, each of the transfer heads is provided with a liquid discharge port, and the liquid discharge module discharges a metal adhesion liquid to the micro light-emitting diode to be transferred through the liquid discharge port;
  • each pair of adjacent transfer heads is provided with a blowing hole, and the cooling module blows outward through the blowing holes to cool the metal adhesion liquid on the micro light-emitting diode to be transferred;
  • each of the transfer heads is provided with a resistance heating body, and the heating module heats the solidified metal adhesion liquid by energizing the resistance heating body.
  • the present invention provides a transfer device for a micro light emitting diode, the transfer device of the micro light emitting diode comprising: a body, a liquid discharge module disposed on the body, a cooling module, and a heating module, which can be spit
  • the liquid module discharges the metal adhesion liquid to the micro light-emitting diode to be transferred, and cools the metal adhesion liquid on the micro light-emitting diode to be transferred through the cooling module, so that the metal adhesion liquid is solidified, and the body and the micro light-emitting diode to be transferred are bonded.
  • the transfer of the micro-light-emitting diodes is carried out together, and after the transfer to the position, the metal adhesion liquid is heated and solidified by the heating module, so that the metal adhesion liquid is melted, and the body and the micro-light-emitting diode to be transferred are separated, which can reduce the difficulty of transferring the micro-light-emitting diodes. Improve the transfer efficiency of the micro light-emitting diode.
  • the invention also provides a transfer method of a micro light-emitting diode, which can reduce the difficulty of transferring the micro light-emitting diode and improve the transfer efficiency of the micro light-emitting diode.
  • FIG. 1 is a schematic block diagram of a transfer device of a micro light emitting diode of the present invention
  • FIG. 2 is a schematic structural view of a transfer device of a micro light emitting diode according to the present invention
  • FIG. 11 are schematic diagrams showing a manufacturing process of a micro light emitting diode in a method for transferring a micro light emitting diode according to the present invention
  • step S1 is a schematic diagram of step S1 of the method for transferring a micro light emitting diode according to the present invention
  • FIG. 13 is a schematic diagram of step S3 of the method for transferring a micro light emitting diode according to the present invention.
  • Figure 14 is a schematic view showing a step S4 of the method for transferring a micro light-emitting diode of the present invention.
  • 15 is a schematic view showing a packaging process of a micro light emitting diode in a method for transferring a micro light emitting diode according to the present invention
  • Figure 16 is a flow chart showing a method of transferring a micro light emitting diode of the present invention.
  • the present invention provides a micro light emitting diode transfer device, comprising: a body 10 , a liquid discharge module 20 disposed on the body 10 , a cooling module 30 , and a heating module 40 .
  • the liquid discharge module 20 is configured to discharge a metal adhesion liquid to the micro light emitting diode to be transferred;
  • the cooling module 30 is configured to cool the metal adhesion liquid on the micro light emitting diode to be transferred, so that the metal adhesion liquid is solidified.
  • the body 10 and the micro light-emitting diode to be transferred are bonded together;
  • the heating module 40 is for heating the solidified metal adhesion liquid, so that the metal adhesion liquid is melted, and the body 10 and the micro light-emitting diode to be transferred are separated.
  • the body 10 includes a plurality of transfer heads 101 arranged in sequence, and each of the transfer heads 101 is provided with a liquid discharge port 102 at the bottom thereof, and the liquid discharge module 20 passes through the liquid discharge port 102.
  • a metal adhesion liquid is discharged to the micro light-emitting diode to be transferred.
  • a blow hole 103 is further disposed between each pair of adjacent transfer heads 101, and the cooling module 30 is blown outward through the blow hole 103 to cool the micro light-emitting diode to be transferred.
  • Metal adhesion solution As shown in FIG. 2, each of the transfer heads 101 is provided with a resistance heating body 104, and the heating module 40 heats the solidified metal adhesion liquid by energizing the resistance heating body 104.
  • the gas blown by the blow hole 103 is helium
  • the material of the electric resistance heating body 104 is tungsten
  • the metal adhesion liquid may be selected from indium (In), gallium (Ga), lead (Pb), and Low melting point metals such as tin (Sn) and alloys thereof.
  • the transfer device of the above micro-light-emitting diode firstly bonds the body 10 and the micro-light-emitting diode to be transferred through the solidified metal adhesion liquid when the micro-light-emitting diode is transferred, and melts the metal adhesion liquid after the micro-light-emitting diode is transferred.
  • the micro light emitting diode is separated from the body 10, and the micro light emitting diode can be reduced in comparison with the existing transfer device using an electrostatic force adsorption micro light emitting diode. Move the difficulty and increase the transfer efficiency of the micro light-emitting diode.
  • the present invention further provides a method for transferring a micro light emitting diode, comprising the following steps:
  • Step S1 Referring to FIG. 12, a transfer substrate 8 is provided, and the transfer substrate 8 is provided with a micro light-emitting diode 100.
  • a process of fabricating and transporting the micro-light emitting diode 100 onto the transport substrate 8 is further included.
  • an original substrate 1 is first provided on the original substrate 1.
  • the LED semiconductor film 2' is etched to form the LED semiconductor layer 2; then, referring to FIG. 5 and FIG.
  • the LED insulating layer 3 and the original substrate 1 are covered with a first insulating layer 3, A patterned second photoresist layer 20 ′ is formed on an insulating layer 3; subsequently, referring to FIG. 7 , the first insulating layer 3 is etched by the second photoresist layer 20 ′ to form a through-hole. a first through hole 4 and a second through hole 5 of the second insulating layer 3, the first through hole 4 and the second through hole 5 respectively exposing a part of the LED semiconductor layer 2 and a part of the original substrate 1; Next, referring to FIG. 8 and FIG.
  • the first insulating layer 3, the LED semiconductor layer 2, and the original base Forming a first metal thin film 6' on the first metal thin film 6', and then forming a patterned third photoresist layer 30'; then, referring to FIG. 10, the third photoresist layer 30' is shielded.
  • the first metal thin film 6 ′ is etched to form a bottom electrode 6 , and the bottom electrode 6 is in contact with the LED semiconductor layer 2 through the first via hole 4 to obtain the micro light emitting diode 100.
  • FIG. 11 please refer to FIG. 11 .
  • the micro light emitting diode 100 is a semi-finished product that is not packaged, and the original substrate 1 may be a sapphire substrate (Al 2 O 3 ), a silicon substrate (Si), a silicon carbide substrate (SiC), or a gallium nitride substrate ( GaN) or the like, the LED semiconductor layer 2 includes an N+ layer, a P+ layer, and a multiple quantum well layer in contact with the N+ layer and the P+ layer.
  • the material of the bottom electrode 6 may be a combination of one or more of metals such as nickel, molybdenum, aluminum, gold, platinum, and titanium.
  • the material of the first insulating layer 3 is silicon oxide, silicon nitride, or aluminum oxide or the like.
  • the transfer substrate 8 is a rigid substrate provided with an adhesive layer on the surface, and the bottom electrode 6 is adhered through an adhesive layer on the surface of the hard substrate, so that the bottom electrode 6 is connected to the transfer substrate 8 and then passes through the laser.
  • the stripping process removes the original substrate 1 such that the micro light emitting diode 100 is transferred onto the transport substrate 8, and the micro light emitting diode 100 is turned upside down, that is, the side surface of the LED semiconductor layer 2 in contact with the original substrate 1 is away from the surface.
  • a transfer device for a micro light emitting diode includes: a body 10 , a liquid discharge module 20 disposed on the body 10 , a cooling module 30 , and a heating module 40 . .
  • the body 10 includes a plurality of transfer heads 101 arranged in sequence, and each of the transfer heads 101 is provided with a liquid discharge port 102 at the bottom thereof, and each pair of adjacent two transfer heads 101 Each of the transfer heads 101 is provided with a resistance heating body 104.
  • Step S3 as shown in FIG. 13, the liquid discharge module 20 discharges a metal adhesion liquid to the micro light emitting diode 100, and the cooling module 30 cools the metal adhesion liquid discharged from the liquid discharge module 20 to make metal adhesion.
  • the liquid is cured to bond the body 10 and the micro-light emitting diode 100 together.
  • the step S3 specifically includes: firstly moving the transfer device of the micro light emitting diode to a position of 0 to 2 micrometers above the micro light emitting diode 100, and then the liquid discharge module 20 passes through the liquid discharge port 102.
  • the metal adhesion liquid is discharged from the LED semiconductor layer 2 of the micro light-emitting diode 100, and then the air blowing hole 103 is blown outward to cure the metal adhesion liquid, and the body 10 and the micro light-emitting diode 100 are bonded together.
  • the gas blown out by the air blowing hole 103 is helium (He).
  • the metal adhesion liquid may be selected from low melting point metals such as indium (In), gallium (Ga), lead (Pb), and tin (Sn), and alloys thereof.
  • low melting point metals such as indium (In), gallium (Ga), lead (Pb), and tin (Sn), and alloys thereof.
  • Step S4 as shown in FIG. 14, providing a receiving substrate 400, the transfer device of the micro light emitting diode moves the micro light emitting diode 100 to a predetermined bonding position on the receiving substrate 400, and the heating module 40 heats the The cured metal adhesion liquid is melted to melt the metal adhesion liquid, and the body 10 and the micro light emitting diode 100 are separated, thereby transferring the micro light emitting diode 100 onto the receiving substrate 400.
  • the receiving substrate 400 includes a substrate substrate 41 , a pixel defining layer 42 disposed on the substrate substrate 41 , and a pixel recess 15 formed in the pixel defining layer 42 .
  • a bottom electrode contact 43 disposed at the bottom of the pixel recess 15 and a top electrode contact 44 disposed on the pixel defining layer 42 on the side of the pixel recess 15 .
  • the receiving substrate 400 may also include driving devices such as thin film transistors, which may be used in the prior art, and are not described herein again.
  • the step S4 specifically includes: first moving the micro light emitting diode 100 to the bottom electrode contact 43 in the pixel groove 15, and then the heating module 40 energizes the resistance heating body 104, so that the resistance The temperature of the heating body 104 rises, the solidified metal adhesion liquid is heated, the metal adhesion liquid is melted, and the body 10 and the micro light emitting diode 100 are separated, and the bottom electrode 6 and the bottom electrode contact 43 are bonded together.
  • the material of the electric resistance heating body 104 is tungsten.
  • the bottom electrode 6 and the bottom electrode contact 43 are bonded together at the bottom electrode 6 and When the bottom electrode contact 43 is in contact, the bottom electrode contact 43 is heated and melted first, and then the bottom electrode contact 43 is cooled and solidified, thereby bonding the bottom electrode 6 and the bottom electrode contact 43 together.
  • the material of the bottom electrode contact 43 is a low melting point metal such as lead or tin.
  • the packaging process specifically includes: referring to FIG. 15 , first, between the pixel defining layers 42 .
  • the encapsulant 7 is filled so that the upper surface of the encapsulant 7 is flush with the pixel defining layer 42 and then deposited on the micro-light emitting diode 100, the pixel defining layer 42, the encapsulant 7 and the top electrode contact 44.
  • a protective layer 9 is formed thereon.
  • the top electrode 8 is a transparent electrode, and the material is indium tin oxide (ITO), indium zinc oxide (IZO), silver nanowire, or a mixture of polyethylene dioxythiophene and polystyrene sulfonic acid (PEDOT: PSS) and so on.
  • the protective layer 9 not only has a protective function, but also has a function of assisting heat dissipation and light extraction.
  • the micro light-emitting diode 100 is transferred by using a transfer device including a micro-light-emitting diode of the body 10, the liquid discharge module 20, the cooling module 30, and the heating module 40, and the body is first transferred when the micro-light-emitting diode 100 is transferred.
  • 10 and the micro light emitting diode 100 are bonded together by the solidified metal adhesion liquid, and after the micro light emitting diode 100 is transferred to the receiving substrate 400, the metal adhesion liquid is melted to separate the micro light emitting diode 100 from the body 10, compared with the existing one.
  • the method of transferring the micro light-emitting diode by electrostatic force can reduce the difficulty of transferring the micro light-emitting diode 100 and improve the transfer efficiency of the micro light-emitting diode 100.
  • the present invention provides a transfer device for a micro light emitting diode, the transfer device of the micro light emitting diode comprising: a body, a liquid discharge module disposed on the body, a cooling module, and a heating module, which can be discharged through a liquid
  • the module discharges the metal adhesion liquid to the micro light-emitting diode to be transferred, and cools the metal adhesion liquid on the micro light-emitting diode to be transferred through the cooling module, so that the metal adhesion liquid is solidified, and the body and the micro light-emitting diode to be transferred are bonded to
  • the transfer of the micro-light-emitting diodes is carried out together, and after the transfer to the position, the metal adhesion liquid is heated and solidified by the heating module, so that the metal adhesion liquid is melted, and the body and the micro-light-emitting diode to be transferred are separated, which can reduce the difficulty of transferring the micro-light-emitting diodes
  • the invention also provides a transfer method of a micro light-emitting diode, which can reduce the difficulty of transferring the micro light-emitting diode and improve the transfer efficiency of the micro light-emitting diode.

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

提供一种微发光二极管的转移设备及转移方法。微发光二极管的转移设备包括：本体、设于本体上的吐液模块、冷却模块和加热模块，可通过吐液模块向待转移的微发光二极管吐出金属粘附液，通过冷却模块冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移，转移到位后通过加热模块加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。

Description

微发光二极管的转移设备及转移方法 技术领域
本发明涉及显示技术领域，尤其涉及一种微发光二极管的转移设备及转移方法。
背景技术
平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
在微发光二极管显示面板的制作过程中，微发光二极管必须先在原始基板(如蓝宝石类基板)上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件原始基板上转移到用于形成显示面板的接收基板上排成显示阵列，具体为：先原始基板上形成微发光二极管，随后通过激光剥离技术(Laser lift-off，LLO)等方法将微发光二极管从原始基板上剥离开，并使用一个采用诸如聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)等材料制作的转移头，如将微发光二极管从原始基板上吸附到接收基板上预设的位置。
现有技术中，用于微发光二极管转移的转移头通常是通过静电力吸附微发光二极管来完成微发光二极管转移的，该方法对转移头与被转移对象之间的间隙有着严格要求，若出现转移间隙的偏差，就会导致转移失效而造成显示面板缺陷。
发明内容
本发明的目的在于提供一种微发光二极管的转移设备，能够降低微发 光二极管的转移难度，提升微发光二极管的转移效率。
本发明的目的还在于提供一种微发光二极管的转移方法，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。
为实现上述目的，本发明提供了一种微发光二极管的转移设备，包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块；
所述吐液模块用于向待转移的微发光二极管吐出金属粘附液；
所述冷却模块用于冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起；
所述加热模块用于加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管。
所述本体包括：多个依次排列的转移头，每一个转移头的底部均设有吐液口，所述吐液模块通过吐液口向待转移的微发光二极管吐出金属粘附液。
每一对相邻的转移头之间均设有吹气孔，所述冷却模块通过吹气孔向外吹气冷却待转移的微发光二极管上的金属粘附液。
每一个转移头上均设有电阻加热体，所述加热模块通过向电阻加热体通电加热固化后的金属粘附液。
所述吹气孔吹出的气体为氦气。
本发明提供一种微发光二极管的转移方法，包括如下步骤：
步骤S1、提供一转运基板，所述转运基板上设有微发光二极管；
步骤S2、提供一微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块；
步骤S3、所述吐液模块向微发光二极管上吐出金属粘附液，所述冷却模块冷却所述吐液模块吐出的金属粘附液，使得金属粘附液固化，将本体和微发光二极管粘结到一起；
步骤S4、提供一接收基板，所述微发光二极管的转移设备将所述微发光二极管移动到接收基板上预设的邦定位置，所述加热模块加热所述固化后的金属粘附液，使得金属粘附液熔化，分离本体和微发光二极管，从而将所述微发光二极管转移到接收基板上。
所述本体包括：多个依次排列的转移头，每一个转移头的底部均设有吐液口，所述步骤S3中吐液模块通过吐液口向微发光二极管上吐出金属粘附液。
每一对相邻的转移头之间均设有吹气孔，所述步骤S3中冷却模块通过吹气孔向外吹气冷却吐液模块吐出的金属粘附液。
每一个转移头上均设有电阻加热体，所述步骤S4中加热模块通过向电阻加热体通电加热固化后的金属粘附液。
所述步骤S3中所述吹气孔吹出的气体为氦气。
本发明还提供一种微发光二极管的转移设备，包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块；
所述吐液模块用于向待转移的微发光二极管吐出金属粘附液；
所述冷却模块用于冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起；
所述加热模块用于加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管；
其中，所述本体包括：多个依次排列的转移头，每一个转移头的底部均设有吐液口，所述吐液模块通过吐液口向待转移的微发光二极管吐出金属粘附液；
其中，每一对相邻的转移头之间均设有吹气孔，所述冷却模块通过吹气孔向外吹气冷却待转移的微发光二极管上的金属粘附液；
其中，每一个转移头上均设有电阻加热体，所述加热模块通过向电阻加热体通电加热固化后的金属粘附液。
本发明的有益效果：本发明提供一种微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块，可通过吐液模块向待转移的微发光二极管吐出金属粘附液，通过冷却模块冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移，转移到位后通过加热模块加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。本发明还提供一种微发光二极管的转移方法，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的微发光二极管的转移设备的模块示意图；
图2为本发明的微发光二极管的转移设备的结构示意图；
图3至图11为本发明的微发光二极管的转移方法中微发光二极管的制作过程的示意图；
图12为本发明的微发光二极管的转移方法的步骤S1的示意图；
图13为本发明的微发光二极管的转移方法的步骤S3的示意图；
图14为本发明的微发光二极管的转移方法的步骤S4的示意图；
图15为本发明的微发光二极管的转移方法中微发光二极管的封装过程的示意图；
图16为本发明的微发光二极管的转移方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种微发光二极管的转移设备，包括：本体10、设于所述本体10上的吐液模块20、冷却模块30和加热模块40。
其中，所述吐液模块20用于向待转移的微发光二极管吐出金属粘附液；所述冷却模块30用于冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体10和待转移的微发光二极管粘结到一起；所述加热模块40用于加热固化后的金属粘附液，使得金属粘附液熔化，分离本体10和待转移的微发光二极管。
具体地，如图2所示，所述本体10包括：多个依次排列的转移头101，每一个转移头101的底部均设有吐液口102，所述吐液模块20通过吐液口102向待转移的微发光二极管吐出金属粘附液。进一步地，如图2所示，在每一对相邻的转移头101之间还设有吹气孔103，所述冷却模块30通过吹气孔103向外吹气冷却待转移的微发光二极管上的金属粘附液。如图2所示，每一个转移头101上均设有电阻加热体104，所述加热模块40通过向电阻加热体104通电加热固化后的金属粘附液。
优选地，所述吹气孔103吹出的气体为氦气，所述电阻加热体104的材料为钨，所述金属粘附液可选择铟(In)、镓(Ga)、铅(Pb)、及锡(Sn)等低熔点金属及其合金。
上述微发光二极管的转移设备，在微发光二极管转移时先将本体10与待转移的微发光二极管通过固化的金属粘附液粘结到一起，在微发光二极管转移完毕后融化金属粘附液使微发光二极管与本体10分离，相较于现有的采用静电力吸附微发光二极管的转移设备，能够降低微发光二极管的转 移难度，提升微发光二极管的转移效率。
请参阅图16，本发明还提供一种微发光二极管的转移方法，包括如下步骤：
步骤S1、请参阅图12，提供一转运基板8，所述转运基板8上设有微发光二极管100。
具体地，所述步骤S1之前还包括一制作并转运所述微发光二极管100至转运基板8上的过程，具体包括：请参阅图3，首先提供一原始基板1，在所述原始基板1上的形成LED半导体薄膜2’，在所述LED半导体薄膜2’上形成图案化的第一光阻层10’；接着，请参阅图4，以所述第一光阻层10’为遮挡，对所述LED半导体薄膜2’进行刻蚀，形成LED半导体层2；然后，请参阅图5和图6，在所述LED半导体层2和原始基板1上覆盖第一绝缘层3，在所述第一绝缘层3上形成图案化的第二光阻层20’；随后，请参阅图7，以第二光阻层20’为遮挡，对所述第一绝缘层3进行刻蚀，形成贯穿所述第二绝缘层3的第一通孔4和第二通孔5，所述第一通孔4和第二通孔5分别暴露出所述LED半导体层2的一部分以及原始基板1的一部分；接着，请参阅图8和图9，在所述第一绝缘层3、LED半导体层2、及原始基板1上形成第一金属薄膜6’，在所述第一金属薄膜6’上形成图案化的第三光阻层30’；接着，请参阅图10，以第三光阻层30’为遮挡，对所述第一金属薄膜6’进行刻蚀，形成底电极6，所述底电极6通过第一通孔4与LED半导体层2接触，制得微发光二极管100，最后，请参阅图11，提供一转运基板8，将所述转运基板8表面与底电极6粘合，剥离所述原始基板1，使得微发光二极管100转移到转运基板8上，暴露出所述LED半导体层2与原始基板1接触的一侧表面。
进一步地，所述微发光二极管100为未进行封装的半成品，所述原始基板1可以蓝宝石基板(Al2O3)、硅基板(Si)、碳化硅基板(SiC)、或氮化镓基板(GaN)等，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述底电极6的材料可以为镍、钼、铝、金、铂、及钛等金属中的一种或多种的组合。所述第一绝缘层3的材料为氧化硅、氮化硅、或氧化铝等。
具体地，所述转运基板8为表面设有粘合层的硬质基板，通过所述硬质基板表面的粘合层粘合底电极6，使得底电极6与转运基板8相连，再通过激光剥离工艺去除原始基板1，使得微发光二极管100转移到转运基板8上，且所述微发光二极管100上下倒转，也即所述LED半导体层2与所述原始基板1接触的一侧表面远离所述转运基板8，以暴露出LED半导体层 2与原始基板1接触的一侧表面。
步骤S2、请参阅图1，提供一微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体10、设于所述本体10上的吐液模块20、冷却模块30和加热模块40。
具体地，如图2所示，所述本体10包括：多个依次排列的转移头101，每一个转移头101的底部均设有吐液口102，每一对相邻的两转移头101之间均设有吹气孔103，每一个转移头101上均设有电阻加热体104。
步骤S3、如图13所示，所述吐液模块20向微发光二极管100上吐出金属粘附液，所述冷却模块30冷却所述吐液模块20吐出的金属粘附液，使得金属粘附液固化，将本体10和微发光二极管100粘结到一起。
具体地，所述步骤S3具体包括：首先将所述微发光二极管的转移设备移动到所述微发光二极管100上方0至2微米的位置，随后所述吐液模块20通过吐液口102向所述微发光二极管100的LED半导体层2上吐出金属粘附液，接着，所述吹气孔103向外吹气，使得金属粘附液固化，将本体10和微发光二极管100粘结到一起。优选地，所述吹气孔103向外吹出的气体为氦气(He)。
优选地，所述金属粘附液可选择铟(In)、镓(Ga)、铅(Pb)、及锡(Sn)等低熔点金属及其合金。
步骤S4、如图14所示，提供一接收基板400，所述微发光二极管的转移设备将所述微发光二极管100移动到接收基板400上预设的邦定位置，所述加热模块40加热所述固化后的金属粘附液，使得金属粘附液熔化，分离本体10和微发光二极管100，从而将所述微发光二极管100转移到接收基板400上。
具体地，如图14所示，所述接收基板400包括：衬底基板41、设于所述衬底基板41上的像素定义层42、形成于所述像素定义层42中的像素凹槽15、设于所述像素凹槽15底部的底电极触点43、设于所述像素凹槽15一侧的像素定义层42上的顶电极触点44。当然所述接收基板400还可以包括薄膜晶体管等驱动器件，这些都可以采用现有技术，此处不再赘述。
具体地，所述步骤S4具体包括：先将所述微发光二极管100移动到像素凹槽15内的底电极触点43上，随后所述加热模块40向所述电阻加热体104通电，使得电阻加热体104温度上升，加热所述固化后的金属粘附液，使金属粘附液熔化，分离本体10和微发光二极管100，所述底电极6与底电极触点43邦定到一起。优选地，所述电阻加热体104的材料为钨。
具体地，所述底电极6与底电极触点43邦定的过程为，在底电极6与 底电极触点43接触时与先加热熔化所述底电极触点43，随后再冷却固化所述底电极触点43，进而将所述底电极6与底电极触点43邦定到一起。优选地，所述底电极触点43的材料为铅或锡等低熔点金属。
进一步地，所述微发光二极管100转移到接收基板400上还需要对所述微发光二极管100进行封装，所述封装过程具体包括：请参阅图15，首先，在所述像素定义层42之间填充封装胶材7，使得封装胶材7的上表面与所述像素定义层42平齐，接着在所述微发光二极管100、像素定义层42、封装胶材7和顶电极触点44上沉积导电薄膜，然后对所述导电薄膜进行图案化，得到与所述LED半导体层2和顶电极触点44接触的顶电极8，最后在所述顶电极8、像素定义层42和封装胶材7上形成保护层9。
具体地，所述顶电极8为透明电极，材料为氧化铟锡(ITO)、氧化铟锌(IZO)、银纳米线、或聚乙撑二氧噻吩和聚苯乙烯磺酸的混合物(PEDOT：PSS)等。所述保护层9不仅具有保护功能，同时还具有辅助散热和光提取的功能。
上述微发光二极管的转移方法，采用包括本体10、吐液模块20、冷却模块30、加热模块40的微发光二极管的转移设备对微发光二极管100进行转移，在微发光二极管100转移时先将本体10与微发光二极管100通过固化的金属粘附液粘结到一起，在微发光二极管100转移至接收基板400后融化金属粘附液使微发光二极管100与本体10分离，相较于现有的采用静电力吸附微发光二极管对其进行转移的方法，能够降低微发光二极管100的转移难度，提升微发光二极管100的转移效率。
综上所述，本发明提供一种微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块，可通过吐液模块向待转移的微发光二极管吐出金属粘附液，通过冷却模块冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移，转移到位后通过加热模块加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。本发明还提供一种微发光二极管的转移方法，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (12)

  1. 一种微发光二极管的转移设备，包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块；
    所述吐液模块用于向待转移的微发光二极管吐出金属粘附液；
    所述冷却模块用于冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起；
    所述加热模块用于加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管。
  2. 如权利要求1所述的微发光二极管的转移设备，其中，所述本体包括：多个依次排列的转移头，每一个转移头的底部均设有吐液口，所述吐液模块通过吐液口向待转移的微发光二极管吐出金属粘附液。
  3. 如权利要求2所述的微发光二极管的转移设备，其中，每一对相邻的转移头之间均设有吹气孔，所述冷却模块通过吹气孔向外吹气冷却待转移的微发光二极管上的金属粘附液。
  4. 如权利要求2所述的微发光二极管的转移设备，其中，每一个转移头上均设有电阻加热体，所述加热模块通过向电阻加热体通电加热固化后的金属粘附液。
  5. 如权利要求3所述的微发光二极管的转移设备，其中，所述吹气孔吹出的气体为氦气。
  6. 一种微发光二极管的转移方法，包括如下步骤：
    步骤S1、提供一转运基板，所述转运基板上设有微发光二极管；
    步骤S2、提供一微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块；
    步骤S3、所述吐液模块向微发光二极管上吐出金属粘附液，所述冷却模块冷却所述吐液模块吐出的金属粘附液，使得金属粘附液固化，将本体和微发光二极管粘结到一起；
    步骤S4、提供一接收基板，所述微发光二极管的转移设备将所述微发光二极管移动到接收基板上预设的邦定位置，所述加热模块加热所述固化后的金属粘附液，使得金属粘附液熔化，分离本体和微发光二极管，从而将所述微发光二极管转移到接收基板上。
  7. 如权利要求6所述的微发光二极管的转移方法，其中，所述本体包括：多个依次排列的转移头，每一个转移头的底部均设有吐液口，所述步 骤S3中吐液模块通过吐液口向微发光二极管上吐出金属粘附液。
  8. 如权利要求7所述的微发光二极管的转移方法，其中，每一对相邻的转移头之间均设有吹气孔，所述步骤S3中冷却模块通过吹气孔向外吹气冷却吐液模块吐出的金属粘附液。
  9. 如权利要求7所述的微发光二极管的转移方法，其中，每一个转移头上均设有电阻加热体，所述步骤S4中加热模块通过向电阻加热体通电加热固化后的金属粘附液。
  10. 如权利要求8所述的微发光二极管的转移方法，其中，所述步骤S3中所述吹气孔吹出的气体为氦气。
  11. 一种微发光二极管的转移设备，包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块；
    所述吐液模块用于向待转移的微发光二极管吐出金属粘附液；
    所述冷却模块用于冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起；
    所述加热模块用于加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管；
    其中，所述本体包括：多个依次排列的转移头，每一个转移头的底部均设有吐液口，所述吐液模块通过吐液口向待转移的微发光二极管吐出金属粘附液；
    其中，每一对相邻的转移头之间均设有吹气孔，所述冷却模块通过吹气孔向外吹气冷却待转移的微发光二极管上的金属粘附液；
    其中，每一个转移头上均设有电阻加热体，所述加热模块通过向电阻加热体通电加热固化后的金属粘附液。
  12. 如权利要求11所述的微发光二极管的转移设备，其中，所述吹气孔吹出的气体为氦气。
PCT/CN2017/089260 2017-05-23 2017-06-20 微发光二极管的转移设备及转移方法 Ceased WO2018214201A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/551,282 US10367117B2 (en) 2017-05-23 2017-06-20 Apparatus and method for transferring micro light-emitting diodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710369880.3A CN107146769B (zh) 2017-05-23 2017-05-23 微发光二极管的转移设备及转移方法
CN201710369880.3 2017-05-23

Publications (1)

Publication Number Publication Date
WO2018214201A1 true WO2018214201A1 (zh) 2018-11-29

Family

ID=59779210

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/089260 Ceased WO2018214201A1 (zh) 2017-05-23 2017-06-20 微发光二极管的转移设备及转移方法

Country Status (3)

Country Link
US (1) US10367117B2 (zh)
CN (1) CN107146769B (zh)
WO (1) WO2018214201A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112967978A (zh) * 2020-06-29 2021-06-15 重庆康佳光电技术研究院有限公司 转移头及芯片转移系统
CN112992721A (zh) * 2020-07-22 2021-06-18 重庆康佳光电技术研究院有限公司 微发光二极管的巨量转移方法和巨量转移装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10020212B1 (en) 2017-10-09 2018-07-10 Oculus Vr, Llc Micro-LED pick and place using metallic gallium
EP3467884B1 (en) * 2017-10-09 2020-07-15 Facebook Technologies, LLC Micro-led pick and place using metallic gallium
CN109671670B (zh) * 2017-10-16 2020-11-03 行家光电股份有限公司 微元件的巨量排列方法及系统
CN108190324A (zh) * 2017-12-28 2018-06-22 泉州市宏恩新能源汽车科技有限公司 一种废墟运输处理方法
CN111244007B (zh) * 2018-11-29 2022-10-28 成都辰显光电有限公司 一种微元件的转移装置
CN111243980B (zh) * 2018-11-29 2022-10-28 成都辰显光电有限公司 一种转移件、转移方法以及转移件的制备方法
CN109742051A (zh) * 2019-01-02 2019-05-10 京东方科技集团股份有限公司 器件制备方法、转印头及其控制方法、控制器和转印装置
KR102702650B1 (ko) * 2019-02-28 2024-09-06 삼성디스플레이 주식회사 전자 장치, 전자 장치 제조 방법, 및 발광 소자 전이 방법
WO2020186479A1 (en) * 2019-03-20 2020-09-24 Boe Technology Group Co., Ltd. Micro light emitting diode transferring apparatus, method for transferring micro light emitting diode, and display apparatus
US11670531B2 (en) 2019-04-25 2023-06-06 Meta Platforms Technologies, Llc Bridge pick-up head for transferring semiconductor devices
CN110349989B (zh) * 2019-07-17 2022-05-03 京东方科技集团股份有限公司 发光二极管、显示基板和转移方法
CN110783252A (zh) * 2019-10-18 2020-02-11 南京中电熊猫平板显示科技有限公司 微型器件转移头及其制作方法、微型器件的转移方法
CN112786514B (zh) * 2019-11-11 2023-01-03 成都辰显光电有限公司 一种微元件的临时转移基板及其制备方法
US11756810B1 (en) * 2019-12-27 2023-09-12 Meta Platforms Technologies, Llc Detection of force applied by pick-up tool for transferring semiconductor devices
WO2022000215A1 (zh) * 2020-06-29 2022-01-06 重庆康佳光电技术研究院有限公司 微流控芯片、转移头及其制作方法、制作系统
CN113937200B (zh) * 2020-07-13 2023-05-12 重庆康佳光电技术研究院有限公司 目标芯片的焊接方法和系统、存储介质
CN112133210B (zh) * 2020-09-27 2022-06-17 湖北长江新型显示产业创新中心有限公司 一种Micro LED喷墨打印装置、转运方法、显示面板及显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001318604A (ja) * 2000-05-08 2001-11-16 Nemoto & Co Ltd 表示部材、その製造方法および時計
US20140033528A1 (en) * 2012-08-06 2014-02-06 Li-Yu Lin Method of fast device attachment
WO2016207640A1 (en) * 2015-06-24 2016-12-29 Dst Innovations Limited Method of surface-mounting components
CN106299079A (zh) * 2015-06-24 2017-01-04 严敏 一种复合led玻璃基面板的封装方法和面板

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014083782A1 (ja) * 2012-11-30 2014-06-05 アピックヤマダ株式会社 レジスト膜形成装置とその方法、導電膜形成および回路形成装置とその方法、電磁波シールド形成装置とその方法、短波長高透過率絶縁膜の成膜装置とその方法、蛍光体の成膜装置とその方法、微量材料合成装置とその方法、樹脂モールド装置、樹脂モールド方法、薄膜形成装置、有機ｅｌ素子、バンプ形成装置とその方法、配線形成装置とその方法、および、配線構造体
US20170162405A1 (en) * 2015-12-04 2017-06-08 Lam Research Ag Spin chuck with heated nozzle assembly

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001318604A (ja) * 2000-05-08 2001-11-16 Nemoto & Co Ltd 表示部材、その製造方法および時計
US20140033528A1 (en) * 2012-08-06 2014-02-06 Li-Yu Lin Method of fast device attachment
WO2016207640A1 (en) * 2015-06-24 2016-12-29 Dst Innovations Limited Method of surface-mounting components
CN106299079A (zh) * 2015-06-24 2017-01-04 严敏 一种复合led玻璃基面板的封装方法和面板

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112967978A (zh) * 2020-06-29 2021-06-15 重庆康佳光电技术研究院有限公司 转移头及芯片转移系统
CN112992721A (zh) * 2020-07-22 2021-06-18 重庆康佳光电技术研究院有限公司 微发光二极管的巨量转移方法和巨量转移装置
CN112992721B (zh) * 2020-07-22 2022-05-31 重庆康佳光电技术研究院有限公司 微发光二极管的巨量转移方法和巨量转移装置

Also Published As

Publication number Publication date
US20180342643A1 (en) 2018-11-29
CN107146769A (zh) 2017-09-08
CN107146769B (zh) 2019-10-25
US10367117B2 (en) 2019-07-30

Similar Documents

Publication Publication Date Title
WO2018214201A1 (zh) 微发光二极管的转移设备及转移方法
US11837593B2 (en) Light emitting structure
Zhu et al. Mass transfer, detection and repair technologies in micro-LED displays
CN108463891B (zh) 微发光二极管转移方法及制造方法
JP6838247B2 (ja) マイクロ発光ダイオードディスプレイパネル及びその製造方法
CN107170773B (zh) 微发光二极管显示面板及其制作方法
JP4211256B2 (ja) 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器
CN108431971B (zh) 微发光二极管转移方法及制造方法
CN104661953B (zh) 微型器件稳定柱
JP3956697B2 (ja) 半導体集積回路の製造方法
WO2017215067A1 (zh) 微发光二极管显示面板及其制作方法
CN115360189A (zh) 显示设备及显示设备的形成方法
US20100133546A1 (en) System and Method for Manufacturing Thick and Thin Film Devices Using a Donee Layer Cleaved From a Crystalline Donor
JP2019036719A (ja) マイクロ発光ダイオード（ｌｅｄ）素子及びディスプレイ
CN111418076A (zh) 在发光器件的选择性区域上形成弹性体层
CN110444547A (zh) 一种微型发光二极管阵列显示背板及其制造方法
Zhao et al. Mass transfer strategies for MicroLED chip assembly: pick-and-place techniques and fluidic self-assembly methods
CN113629095A (zh) 发光显示装置以及发光显示装置的制作方法
TW202316699A (zh) 半導體元件排列結構
CN118213445B (zh) 一种巨量转移方法、显示装置及其制作方法
US20250287736A1 (en) Led wafer, carrier substrate for led chip, manufacturing method for display device, and repair method for display device
TWI712186B (zh) 發光裝置封裝製程
Saeedi et al. Self-assembled single-digit micro-display on plastic
JP2024174845A (ja) 半導体素子配列構造及びその作製方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15551282

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17910756

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17910756

Country of ref document: EP

Kind code of ref document: A1