WO2018181347A1 - 研磨パッド - Google Patents
研磨パッド Download PDFInfo
- Publication number
- WO2018181347A1 WO2018181347A1 PCT/JP2018/012483 JP2018012483W WO2018181347A1 WO 2018181347 A1 WO2018181347 A1 WO 2018181347A1 JP 2018012483 W JP2018012483 W JP 2018012483W WO 2018181347 A1 WO2018181347 A1 WO 2018181347A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- groove
- polishing pad
- resin
- roughness
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 182
- 229920005989 resin Polymers 0.000 claims description 55
- 239000011347 resin Substances 0.000 claims description 55
- 239000006260 foam Substances 0.000 claims description 23
- 229920005992 thermoplastic resin Polymers 0.000 claims description 7
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 4
- 229920005668 polycarbonate resin Polymers 0.000 claims description 3
- 239000004431 polycarbonate resin Substances 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000002002 slurry Substances 0.000 abstract description 25
- 238000007599 discharging Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 33
- 238000004519 manufacturing process Methods 0.000 description 15
- 210000004027 cell Anatomy 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 210000002421 cell wall Anatomy 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002667 nucleating agent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L67/00—Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
- C08L67/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L69/00—Compositions of polycarbonates; Compositions of derivatives of polycarbonates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
- C08L81/02—Polythioethers; Polythioether-ethers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a polishing pad excellent in polishing performance and polishing slurry discharge characteristics.
- HDDs hard disk drives
- the polishing pad is required to have not only polishing properties but also polishing slurry discharge characteristics for smooth mirror surface processing. Therefore, in order to improve the balance (discharge characteristics) between supply and discharge of the polishing slurry, the polishing layer has grooves on the polishing surface, and the average roughness (Ra) of the inner surface of the grooves is 1.0 to 5.
- a polishing pad having a thickness of 0 ⁇ m has been proposed (Patent Document 1).
- a groove is formed by cutting or the like on the porous material, and the inner surface of the groove is made non-porous by post-processing such as laser melting, so that the processing is complicated.
- the state of the polishing surface (especially roughness) of the polishing layer is not specified, and there is a problem that it is sometimes impossible to achieve both polishing properties and discharge characteristics of the polishing slurry. There was a problem that it could not be obtained.
- an object of the present invention is to provide a polishing pad excellent in polishing performance and polishing slurry discharge characteristics.
- An aspect of the present invention is a polishing pad having a polishing part and a groove part on a polishing surface, wherein the surface of the groove part has an unfoamed part, and the surface of the polishing part is polished by the foam part. It is a pad.
- the polishing surface is for polishing the polishing target to be processed and polishing slurry supplied to the polishing pad when the processing target is polished. And a groove portion. Since the foamed part of the foam is exposed on the surface of the polished part and the surface of the groove part has an unfoamed part, the maximum height roughness (Rz) of the polished part surface is the maximum height roughness (Rz) of the groove part surface. The arithmetic average roughness (Ra) of the surface of the polished part is larger than the arithmetic average roughness (Ra) of the surface of the groove part.
- An aspect of the present invention is a polishing pad in which the maximum height roughness (Rz) of the surface of the groove is 10 ⁇ m to 30 ⁇ m, and the maximum height roughness (Rz) of the surface of the polishing part is 30 ⁇ m to 100 ⁇ m. It is.
- An aspect of the present invention is a polishing pad in which an arithmetic average roughness (Ra) of the surface of the groove is 0.1 ⁇ m to 10 ⁇ m, and an arithmetic average roughness (Ra) of the surface of the polishing part is 10 ⁇ m to 45 ⁇ m. is there.
- An aspect of the present invention is a polishing pad having a value of (maximum height roughness (Rz) of the surface of the polishing portion) ⁇ (maximum height roughness (Rz) of the surface of the groove portion) of 20 ⁇ m to 70 ⁇ m. is there.
- An aspect of the present invention is a polishing pad having a value of (arithmetic average roughness (Ra) of the surface of the polishing portion) ⁇ (arithmetic average roughness (Ra) of the surface of the groove portion) of 5 ⁇ m to 35 ⁇ m.
- An aspect of the present invention has a resin foam made of a thermoplastic resin having a three-dimensional cell structure, and the thermoplastic resin is at least selected from the group consisting of a polyphenylene sulfide resin, a polyethylene terephthalate resin, and a polycarbonate resin. This is a type of polishing pad.
- the polishing slurry can be smoothly discharged from the polishing pad because the surface of the groove has an unfoamed portion. Accordingly, it is possible to prevent the polishing residue (polishing residue) mixed in the polishing slurry by the polishing process from staying in the polishing pad. Further, since the polishing slurry can be smoothly discharged from the polishing pad, the temperature rise of the polishing pad can be prevented. On the other hand, the foamed part is exposed on the surface of the polished part, that is, the surface is rough, so that the polishing performance of the polished part is improved, and the polishing slurry is captured by the exposed foamed part. The polishing performance of the polishing part is improved.
- the polishing surface 10 which is a surface on the polishing side has a polishing portion 11 and a groove portion 12.
- the polishing unit 11 is a part that polishes an object to be processed (not shown) to be polished.
- the groove portion 12 is a portion for discharging the polishing slurry and polishing dust supplied to the polishing pad when polishing the object to be processed from the polishing surface 10 to the outside.
- the polishing pad 1 includes a resin foam 15 having a surface unfoamed layer 13 whose surface layer is an unfoamed portion and a foamed portion 14 provided inside the surface unfoamed layer 13.
- the foamed portion 14 of the resin foam 15 is exposed on substantially the entire surface of the polishing portion 11. Therefore, in the polishing pad 1, the surface of the polishing portion 11 does not have the surface unfoamed layer 13.
- the foamed portion 14 of the resin foam 15 has a three-dimensional cell structure in which a plurality of cells 17 partitioned by the cell walls 16 are densely formed. Since the three-dimensional bubble structure is exposed from the surface in the polishing unit 11, the inner surface of the bubble 17 is exposed on the surface of the polishing unit 11. Therefore, the surface of the polishing part 11 has a porous structure. In the polishing part 11, the foamed part 14 can be exposed by removing the unfoamed surface layer 13 in advance by a polishing process or the like.
- the surface of the groove 12 has an unfoamed portion of the resin foam 15. That is, the surface of the groove 12 is a surface unfoamed layer 13. In the surface non-foamed layer 13, bubbles due to foaming are not formed. In the polishing pad 1, substantially the entire surface of the groove 12 is a surface unfoamed layer 13 that is an unfoamed portion. Therefore, the surface of the groove portion 12 does not expose the inside of the bubble 17, that is, the inner surface of the bubble wall 16, and does not reveal a porous structure.
- the surface of the groove part 12 which is the surface unfoamed layer 13 is smooth, and the surface of the polishing part 11 where the foamed part 14 is exposed is rougher than the surface of the groove part 12.
- the maximum height roughness (Rz) and arithmetic average roughness (Ra) of the surface of the polishing portion 11 are larger than the surface of the groove portion 12.
- “maximum height roughness (Rz)” and “arithmetic mean roughness (Ra)” mean values measured with a laser microscope (VX-X150, manufactured by Keyence Corporation).
- the maximum height roughness (Rz) of the surface of the polishing part 11 is not particularly limited, for example, the lower limit is preferably 20 ⁇ m or more from the viewpoint of improving the polishing performance of the polishing part 11 due to the rough surface.
- the thickness is more preferably 25 ⁇ m or more, and particularly preferably 30 ⁇ m or more from the viewpoint that the polishing slurry is trapped on the inner surface of the bubble wall 16 of the foamed portion 14 and the polishing performance of the polishing portion 11 is further improved.
- the upper limit of the maximum height roughness (Rz) of the surface of the polishing part 11 is preferably 100 ⁇ m or less, more preferably 65 ⁇ m or less, and particularly preferably 55 ⁇ m or less, from the viewpoint of ease of production of the resin foam 15. .
- the arithmetic average roughness (Ra) of the surface of the polishing part 11 is not particularly limited.
- the lower limit is preferably 10 ⁇ m or more from the viewpoint of improving the polishing performance of the polishing part 11 due to the rough surface.
- the thickness is more preferably 15 ⁇ m or more, and particularly preferably 25 ⁇ m or more from the viewpoint that the polishing slurry is trapped on the inner surface of the bubble wall 16 of the portion 14 and the polishing performance of the polishing portion 11 is further improved.
- the upper limit value of the arithmetic average roughness (Ra) on the surface of the polishing part 11 is preferably 45 ⁇ m or less, particularly preferably 35 ⁇ m or less, from the viewpoint of ease of manufacturing the resin foam 15.
- the maximum height roughness (Rz) of the surface of the groove 12 is not particularly limited.
- the lower limit is preferably 10 ⁇ m or more, particularly preferably 15 ⁇ m or more, from the viewpoint of ease of production of the resin foam 15.
- the upper limit of the maximum height roughness (Rz) is, for example, that the polishing slurry is smoothly discharged from the polishing pad, and the polishing debris mixed in the polishing slurry by the polishing process to the target object is retained in the polishing pad.
- 30 ⁇ m or less is preferable from the viewpoint of reliably preventing the polishing, and 25 ⁇ m or less is more preferable, and 20 ⁇ m or less is particularly preferable from the viewpoint of reliably discharging the polishing slurry from the polishing pad and reliably preventing the polishing pad from rising in temperature.
- the arithmetic average roughness (Ra) of the surface of the groove 12 is not particularly limited.
- the lower limit is preferably 0.1 ⁇ m or more, and particularly preferably 0.5 ⁇ m or more from the viewpoint of ease of production of the resin foam 15.
- the upper limit value of the arithmetic average roughness (Ra) is, for example, that the polishing slurry is smoothly discharged from the polishing pad, and the polishing residue mixed in the polishing slurry by the polishing process on the object to be processed remains in the polishing pad.
- the thickness is preferably 10 ⁇ m or less from the viewpoint of reliably preventing this, more preferably 5 ⁇ m or less, and particularly preferably 3 ⁇ m or less from the viewpoint of smoothly discharging the polishing slurry from the polishing pad and reliably preventing the temperature of the polishing pad from rising.
- the difference in the maximum height roughness (Rz) of 12 surfaces is not particularly limited.
- the lower limit is preferably 20 ⁇ m or more, and preferably 30 ⁇ m or more from the viewpoint of improving the balance between the polishing performance and the discharge characteristics of the polishing slurry. Is particularly preferred.
- the upper limit value of the difference between the maximum height roughness (Rz) on the surface of the polishing part 11 and the maximum height roughness (Rz) on the surface of the groove part 12 is not particularly limited, but it is easy to manufacture the resin foam 15. From the viewpoint, 70 ⁇ m or less is preferable, and 60 ⁇ m or less is particularly preferable.
- the difference in arithmetic average roughness (Ra) is not particularly limited.
- the lower limit is preferably 5 ⁇ m or more, and particularly preferably 10 ⁇ m or more, from the viewpoint of improving the balance between the polishing performance and the discharge characteristics of the polishing slurry.
- the upper limit of the difference between the arithmetic average roughness (Ra) on the surface of the polishing part 11 and the arithmetic average roughness (Ra) on the surface of the groove part 12 is not particularly limited, but from the viewpoint of ease of manufacturing the resin foam 15. 35 ⁇ m or less is preferable, and 30 ⁇ m or less is particularly preferable.
- the material of the resin foam 15 is not particularly limited, and examples thereof include hard resins such as polyphenylene sulfide resin (PPS resin), polyethylene terephthalate (PET resin), and polycarbonate resin (PC resin).
- PPS resin polyphenylene sulfide resin
- PET resin polyethylene terephthalate
- PC resin polycarbonate resin
- the thickness of the resin foam 15 provided in the polishing pad 1 is not particularly limited, and for example, a range of about 0.5 to 2.0 mm can be given. It is 0 mm.
- the depth of the groove 12 is not particularly limited. For example, a range of about 0.2 to 1.0 mm can be given, and the polishing pad 1 has a depth of about 0.5 mm.
- the resin foam 15 has a three-dimensional cell structure configured by a plurality of bubbles (cells) and cell walls partitioned so that these cells have mutually independent partitions.
- the average cell diameter is not particularly limited, but is preferably 4 to 50 ⁇ m, for example, and the average cell wall thickness is not particularly limited, but is preferably 1 to 5 ⁇ m, for example.
- the bubble diameter is a diameter when bubbles in an arbitrary cross section are converted into a circle of the same area, and the average bubble diameter is an average of the bubble diameters of 10 arbitrarily selected bubbles.
- the bubble wall thickness is the minimum thickness of the bubble wall between adjacent bubbles in an arbitrary cross section, and the average bubble wall thickness is the average of the 10 selected bubble wall thicknesses.
- the average bubble diameter and the average bubble wall thickness can be obtained by image processing of a structural photograph of the resin foam 15 observed with a scanning electron microscope (SEM, manufactured by JEOL Ltd.).
- the average bubble diameter is smaller than 4 ⁇ m, the number of abrasive grains held inside the bubbles is reduced, the polishing rate is lowered and a stable polished surface cannot be obtained.
- the average bubble diameter exceeds 50 ⁇ m, the strength of the bubble wall is increased. Insufficient and stable surface quality cannot be obtained, and the surface quality is deteriorated. At the same time, a large amount of abrasive particles accumulate in the bubbles and secondary particles are generated, and surface defects such as scratches are likely to occur. By setting the average bubble diameter within this range, the bubble structure is further optimized and the polishing rate is excellent.
- the ratio of the average bubble diameter to the average bubble wall thickness is preferably 4 or more and 10 or less.
- the ratio of the average cell diameter to the average cell wall thickness is less than 4, the number of abrasive grains as abrasive particles held inside the cells decreases, the polishing rate decreases, and a stable polished surface cannot be obtained. If it exceeds 1, the strength of the bubble wall is insufficient, and a stable polishing state cannot be obtained, resulting in a decrease in the polishing rate.
- a flat resin member having a surface unfoamed layer 13 whose surface layer is an unfoamed portion and a foamed portion 14 provided inside the surface unfoamed layer 13. 20 is used.
- One flat surface provided with the surface unfoamed layer 13 is a surface on the polishing side of the polishing pad 1. Therefore, the outer surface of the surface unfoamed layer 13 of the resin member 20 is substantially flat.
- the thickness of the resin member 20 is the thickness of the resin foam 15 described above, and the thickness of the surface unfoamed layer 13 of the resin member 20 is not particularly limited, but may be in the range of about 25 to 100 ⁇ m, for example.
- the resin member 20 has a thickness of about 50 ⁇ m.
- the thickness of the foamed portion 14 of the resin member 20 is a thickness obtained by subtracting the thickness of the surface unfoamed layer 13 on the front and back surfaces of the resin member 20 from the thickness of the resin member 20.
- the groove 12 is formed in the surface non-foamed layer 13 of the resin member 20 described above.
- a groove portion forming mold member 21 having a blade-like protruding portion 22 may be used as a method for forming the groove portion 12.
- the groove forming mold member 21 has a thin flat plate shape.
- the arrangement of the protrusions 22 of the groove forming mold member 21 is not particularly limited, but in FIG. 3A, a plurality of protrusions 22 are formed at substantially equal intervals in a concentric circle shape.
- the cross-sectional shape of the protrusion 22 is not particularly limited, but as shown in FIG. 3B, in the groove forming mold member 21, the cross-section of the protrusion 22 is substantially triangular.
- the groove forming mold member 21 By applying the groove forming mold member 21 on the resin member 20 of FIG. 2 and pressing the top of the protrusion 22 of the groove forming mold member 21 against the surface unfoamed layer 13 of the resin member 20 with a predetermined pressure, The unfoamed layer 13 is pushed in the direction of the foamed portion 14, and the groove portion 12 can be formed in the polishing pad 1. Therefore, the groove 12 is formed in the surface non-foamed layer 13 of the resin member 20 corresponding to the position of the protrusion 22 of the groove forming mold member 21 of FIG. Further, the depth of the groove 12 is specified corresponding to the height of the protrusion 22.
- the height of the protrusion 22 can be selected as appropriate according to the desired depth of the groove 12, and can be in the range of about 0.2 to 1.0 mm, for example, to manufacture the polishing pad 1.
- the length is about 0.5 mm.
- the material of the groove forming mold member 21 include metals and hard resins.
- the groove forming mold member 21 As a method of applying the groove forming mold member 21 to the resin member 20, for example, as shown in FIG. 4, the groove forming mold member 21 is formed into a roll shape, and while rotating the roll-shaped groove forming mold member 21, The groove 12 can be formed on the resin member 20 by pressing the protrusion 22 against the unfoamed surface layer 13 of the resin member 20 with a predetermined pressure.
- a portion other than the groove portion 12 functions as the polishing portion 11.
- a polishing process such as buffing
- the foamed portion 14 of the resin member 20 can be exposed to form the polishing portion 11 and the polishing pad 1 can be obtained.
- the thickness of the resin foam 15 including the unfoamed surface layer 13 that is removed by buffing or the like is not particularly limited, and examples thereof include removal in the range of about 50 to 200 ⁇ m.
- the surface unfoamed layer 13 of the resin member 20 since the surface unfoamed layer 13 of the resin member 20 has a thickness of about 50 ⁇ m, it is in a mode after being removed by about 100 ⁇ m.
- the groove portion 12 having a smooth surface can be formed by pressing the blade-like protrusion 22 against the resin member 20 having the surface non-foamed layer 13 and the foamed portion 14. Is easy to manufacture. Moreover, since the groove part 12 can be formed by pressing the projection part 22 against the resin member 20, the shape and arrangement of the groove part 12 can be changed by changing the shape and arrangement of the projection part 22, and the design of the groove part 12 is free. The degree can be improved.
- the method for producing the resin member 20 having the surface unfoamed layer 13 and the foamed portion 14 is not particularly limited, and a known method can be used.
- a predetermined unfoamed resin molded body is sealed in a high-pressure container, an inert gas is injected into the high-pressure container, and the inert gas is infiltrated into the molded body under pressure. After infiltrating the inert gas, the pressure in the pressure vessel is released, and then the molded body is heated to foam, and the molded body is further cooled to produce the resin member 20 having the surface unfoamed layer 13 and the foamed portion 14.
- the method of doing can be mentioned.
- an aerated nucleating agent is added to the thermoplastic resin layer for forming the foamed layer, or a crystallization nucleating agent and a crystallization accelerator are added to the thermoplastic resin layer for forming the non-foamed layer.
- the foamability of each resin layer can be controlled to some extent.
- the foamability can be controlled more strictly.
- the polishing pad according to the embodiment of the present invention can be used, for example, in a polishing apparatus for polishing a magnetic disk, a semiconductor wafer, various substrates, and an electronic material.
- a polishing apparatus for example, a lower surface plate having a polishing pad disposed on the inner surface, a support member for supporting a workpiece such as a semiconductor wafer on the polishing pad of the lower surface plate, and a polishing pad disposed on the inner surface, the semiconductor wafer
- the semiconductor wafer examples thereof include a polishing apparatus provided with an upper surface plate for applying a predetermined pressure to the object to be processed and a polishing slurry supply means.
- the foamed portion 14 is exposed from the entire surface of the polishing portion 11, and the polishing portion 11 does not have the surface non-foamed layer 13.
- the foamed portion 14 may be exposed from a part of the surface, and the surface may be the unfoamed layer 13 on the other surface.
- the cross section of the protrusion is substantially triangular, but the shape is not limited as long as it is a protrusion, and instead, for example, a quadrangle such as a trapezoid or It may be a polygon such as a pentagon, a substantially semi-ellipse, or a substantially semi-circle.
- the polishing pad of the present invention is excellent in polishing performance and polishing slurry discharge characteristics, it can be used in a wide variety of fields. For example, in the field of polishing of magnetic disks and semiconductor wafers that require advanced smooth mirror surface processing. High utility value.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
10 研磨面
11 研磨部
12 溝部
13 表面未発泡層
14 発泡部
15 樹脂発泡体
Claims (6)
- 研磨部と溝部とを研磨面に有する研磨パッドであって、
前記溝部の表面は、未発泡部を有し、前記研磨部の表面は、発泡部が表出している研磨パッド。 - 前記溝部の表面の最大高さ粗さ(Rz)が、10μm~30μmであり、前記研磨部の表面の最大高さ粗さ(Rz)が、30μm~100μmである請求項1に記載の研磨パッド。
- 前記溝部の表面の算術平均粗さ(Ra)が、0.1μm~10μmであり、前記研磨部の表面の算術平均粗さ(Ra)が、10μm~45μmである請求項1または2に記載の研磨パッド。
- (前記研磨部の表面の最大高さ粗さ(Rz))-(前記溝部の表面の最大高さ粗さ(Rz))の値が、20μm~70μmである請求項1乃至3のいずれか1項に記載の研磨パッド。
- (前記研磨部の表面の算術平均粗さ(Ra))-(前記溝部の表面の算術平均粗さ(Ra))の値が、5μm~35μmである請求項1乃至4のいずれか1項に記載の研磨パッド。
- 3次元の気泡構造を有する、熱可塑性樹脂からなる樹脂発泡体を有し、前記熱可塑性樹脂が、ポリフェニレンサルファイド樹脂、ポリエチレンテレフタレート樹脂及びポリカーボネート樹脂からなる群から選択された少なくとも1種である請求項1乃至5のいずれか1項に記載の研磨パッド。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR1020197028274A KR102285674B1 (ko) | 2017-03-31 | 2018-03-27 | 연마 패드 |
JP2018544944A JPWO2018181347A1 (ja) | 2017-03-31 | 2018-03-27 | 研磨パッド |
CN201880001838.9A CN109153107A (zh) | 2017-03-31 | 2018-03-27 | 抛光垫 |
US16/586,545 US20200039023A1 (en) | 2017-03-31 | 2019-09-27 | Abrasive pad |
Applications Claiming Priority (2)
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JP2017-070780 | 2017-03-31 | ||
JP2017070780 | 2017-03-31 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US16/586,545 Continuation US20200039023A1 (en) | 2017-03-31 | 2019-09-27 | Abrasive pad |
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WO2018181347A1 true WO2018181347A1 (ja) | 2018-10-04 |
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ID=63676386
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PCT/JP2018/012483 WO2018181347A1 (ja) | 2017-03-31 | 2018-03-27 | 研磨パッド |
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US (1) | US20200039023A1 (ja) |
JP (1) | JPWO2018181347A1 (ja) |
KR (1) | KR102285674B1 (ja) |
CN (1) | CN109153107A (ja) |
TW (1) | TWI673136B (ja) |
WO (1) | WO2018181347A1 (ja) |
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- 2018-03-27 JP JP2018544944A patent/JPWO2018181347A1/ja active Pending
- 2018-03-27 WO PCT/JP2018/012483 patent/WO2018181347A1/ja active Application Filing
- 2018-03-27 CN CN201880001838.9A patent/CN109153107A/zh active Pending
- 2018-03-30 TW TW107111237A patent/TWI673136B/zh active
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JP2006159380A (ja) * | 2004-12-10 | 2006-06-22 | Toyo Tire & Rubber Co Ltd | 研磨パッドおよび半導体デバイスの製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
JPWO2018181347A1 (ja) | 2020-03-05 |
TW201836766A (zh) | 2018-10-16 |
US20200039023A1 (en) | 2020-02-06 |
TWI673136B (zh) | 2019-10-01 |
CN109153107A (zh) | 2019-01-04 |
KR20190122756A (ko) | 2019-10-30 |
KR102285674B1 (ko) | 2021-08-04 |
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