WO2018179766A1 - 仮固定基板および電子部品の仮固定方法 - Google Patents
仮固定基板および電子部品の仮固定方法 Download PDFInfo
- Publication number
- WO2018179766A1 WO2018179766A1 PCT/JP2018/002371 JP2018002371W WO2018179766A1 WO 2018179766 A1 WO2018179766 A1 WO 2018179766A1 JP 2018002371 W JP2018002371 W JP 2018002371W WO 2018179766 A1 WO2018179766 A1 WO 2018179766A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- fixing
- temporarily fixed
- temporarily
- fixed
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims description 20
- 229920005989 resin Polymers 0.000 claims abstract description 33
- 239000011347 resin Substances 0.000 claims abstract description 33
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 description 14
- 239000000843 powder Substances 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- 239000002002 slurry Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 239000003349 gelling agent Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- ADQQGJLCEXHTRW-UHFFFAOYSA-N 1-(dimethylamino)hexan-1-ol Chemical compound CCCCCC(O)N(C)C ADQQGJLCEXHTRW-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
Definitions
- the present invention relates to a temporary fixing substrate having a fixing surface for adhering electronic components and temporarily fixing with a resin mold and a bottom surface on the opposite side of the fixing surface.
- Patent Documents 1, 2, and 3 There are known methods for adhering and fixing an electronic component made of silicon or the like on a support substrate made of glass or ceramics.
- Patent Documents 1, 2, and 3 an electronic component is bonded to a support substrate with a thermosetting resin and cooled to obtain a joined body.
- an attempt is made to reduce the warpage of the joined body by adjusting the warpage of the support substrate.
- the warpage of the support substrate is adjusted by changing the polishing method or removing the work-affected layer.
- Patent Document 4 when a light-emitting diode is installed on the surface of a sapphire substrate, both one main surface and the other main surface of the sapphire substrate are lapped and polished, and then only one main surface is precisely processed by CMP or the like. Polishing is disclosed.
- the present inventor has been studying bonding a large number of electronic components on a temporary fixing substrate made of glass or ceramics, and then temporarily fixing the electronic components with a resin mold. In this process, application of various support substrates as described in the prior art has been studied.
- An object of the present invention is to suppress a mold defect due to a place on a temporarily fixed substrate and to improve a yield when a plurality of electronic components are fixed in a resin mold on the temporarily fixed substrate.
- the present invention is a temporary fixing substrate comprising a fixing surface for bonding a plurality of electronic components and temporarily fixing with a resin mold, and a bottom surface on the opposite side of the fixing surface,
- the temporarily fixed substrate When viewed in a cross section of the temporarily fixed substrate, the temporarily fixed substrate is warped so that the fixed surface has a convex shape upward from the temporarily fixed substrate, and the following expression (1) is satisfied. 0.45 ⁇ W 3/4 /W ⁇ 0.55 (1) (In Formula (1), The width of the fixed surface when viewed in the cross section of the temporarily fixed substrate is W, Let W 3/4 be the width of a region where the height of the fixed surface relative to the reference surface of warpage of the temporarily fixed substrate is 3/4 or more of the maximum height of the fixed surface relative to the reference surface. )
- the present invention is a temporary fixing substrate having a fixing surface for bonding a plurality of electronic components and temporarily fixing with a resin mold, and a bottom surface on the opposite side of the fixing surface, the cross section of the temporary fixing substrate
- the temporary fixing substrate is warped so that the fixing surface has a convex shape upward from the temporary fixing substrate, and a temporary fixing substrate satisfying the following formula (1) is prepared, and the temporary fixing substrate is fixed.
- the electronic component is bonded to a surface and temporarily fixed by the resin mold.
- the present inventor investigated the cause of mold failure depending on the location on the temporarily fixed substrate when fixing a plurality of electronic components on the temporarily fixed substrate in the resin mold. As a result, it has been found that mold defects are likely to occur at the peripheral edge and the center of the temporarily fixed substrate. If there is a mold failure at the periphery of the temporarily fixed substrate, a mold failure is less likely to occur at the center, and if a mold failure occurs at the center of the temporarily fixed substrate, a mold failure occurs at the periphery. It was hard to occur.
- the present inventor has found that when an electronic component is bonded onto a temporarily fixed substrate and a liquid molding agent is poured, a filling failure of the molding agent is likely to occur locally. Then, attention was paid to the fine shape of the fixed surface (installation surface) of the temporarily fixed substrate. That is, the normal temporary fixing substrate is warped so as to be slightly convex toward the fixing surface, but this convex shape is a shape close to an arc.
- FIG. 1 is a cross-sectional view showing a state in which a temporarily fixed substrate 2 according to an embodiment of the present invention is installed on a surface plate 1.
- FIG. 2 is a plan view showing a fixing surface of the temporary fixing substrate 2. It is a cross-sectional view showing a state where the temporarily fixed substrate 12 of the comparative example is installed on the surface plate 1.
- A shows a state in which the adhesive 3 is provided on the fixing surface 2a of the temporary fixing substrate 2
- (b) shows a state in which the electronic component 4 is bonded to the fixing surface 2a of the temporary fixing substrate 2
- the bottom surface 2 b of the temporarily fixed substrate 2 is installed on the surface 1 a of the surface plate 1.
- the fixing surface 2a of the temporary fixing substrate is provided on the opposite side of the bottom surface 2b.
- T the thickness of the temporarily fixed substrate 2
- the temporarily fixed substrate 2 is slightly warped upward
- the fixed surface 2a is slightly convex toward the upper side.
- the curvature is exaggerated for the sake of understanding.
- the temporarily fixed substrate is warped and fixed so that the fixed surface 2a is convex upward from the temporarily fixed substrate 2 when viewed in a cross section of the temporarily fixed substrate 2.
- the surface 2a satisfies the following formula (1). 0.45 ⁇ W 3/4 /W ⁇ 0.55 (1)
- the temporarily fixed substrate 2 is installed on the surface 1 a of the surface plate 1.
- the bottom surface 2b of the temporarily fixed substrate contacts the surface 1a, and the temporarily fixed substrate 2 is supported.
- the temporarily fixed substrate is warped so as to be slightly convex upward.
- the width of the fixed surface 2 a when viewed in a cross section of the temporarily fixed substrate 2 is defined as W.
- a plane that passes through the point O where the distance between the fixed surface 2a of the temporarily fixed substrate 2 and the surface 1a of the surface plate 1 is minimum and is parallel to the surface 1a of the surface plate 1 is used as a reference for the warp of the temporarily fixed substrate 2. Let it be surface R.
- the height of the fixed surface 2a with respect to the reference surface R is measured.
- a point having a height of 0 is O
- a point having the maximum height is P
- a maximum value of the height is HP.
- a point at which the height of the fixed surface 2a with respect to the reference surface R is 3/4 (H 3/4 ) of the maximum value HP is P 3/4
- the height of the fixed surface 2a with respect to the reference surface R is the maximum value HP.
- the width of a region that is equal to or greater than 3/4 (H 3/4 ) is W 3/4 .
- W 3/4 / W when W 3/4 / W is set to 0.45 or more and 0.55 or less, when an electronic component is fixed on the temporarily fixed substrate with a resin mold, mold failure due to a place can be suppressed.
- the reason for this is not clear, but is thought to be as follows.
- W 3/4 / W is 0.50, which means that the shape of the fixed surface is a parabolic shape or a shape close to a parabola. With such a shape, it is considered that when the liquid molding agent is poured between the electronic components on the temporarily fixed substrate, the molding agent is appropriately disposed over the entire fixing surface, and molding defects are unlikely to occur.
- W 3/4 / W is less than 0.45, mold defects frequently occur at the center portion of the fixing surface of the temporary fixing substrate, so that it is 0.45 or more, but 0.48 or more is more preferable.
- W 3/4 / W exceeds 0.55, mold defects frequently occur at the peripheral portion of the fixed surface. Therefore, it is set to 0.55 or less, but more preferably 0.52 or less.
- the fixed surface has a substantially parabolic shape.
- FIG. 1 A method for measuring the height of the fixed surface from the reference surface will be described.
- a temporarily fixed substrate is installed on the surface plate 1.
- the fixing surface 2a of the temporary fixing substrate 2 is divided in eight directions. The direction is determined in increments of 45 ° with the notch being the reference point being 0 °.
- measurement is performed toward four lines of “0 ° -180 °”, “45 ° -225 °”, “90 ° -270 °”, and “135 ° -315 °”.
- each measurement point is set at equal intervals of 1 mm pitch for each line.
- a laser displacement meter “(LK-H027K manufactured by Keyence Corporation)” is used for measuring the height of the fixed surface from the reference surface. Then, as described with reference to FIGS. 1 and 2, when the maximum height is HP, the number of measurement points at which the height is 3/4 ⁇ P or more is measured. Then, (the number of measurement points whose height is 3/4 ⁇ P or more) / (the number of all measurement points) is defined as (W 3/4 / W). In addition, when only 9 or less measurement points having a height of 3/4 ⁇ P or more are continuous, the measurement abnormal point is “number of measurement points having a height of 3/4 ⁇ P or more”. Not included.
- the temporarily fixed substrate is warped so that the fixed surface of the temporarily fixed substrate when viewed in cross section forms a convex shape toward the side opposite to the bottom surface.
- the convex figure means that a line segment connecting any two points on the outer contour line of the fixed surface is located inside the temporarily fixed substrate as viewed from the contour line of the fixed surface. Therefore, the case where a concave portion is provided on the fixed surface or a flat surface is provided is excluded.
- the flat surface 13 is provided in the center part of the fixed surface 12a.
- 12b is a bottom surface.
- the line segment connecting the contour lines of the fixed surface does not enter the temporary fixed substrate and may be positioned on the flat surface 13, so that the fixed surface forms a convex figure toward the upper side. I can not say.
- W 3/4 / W is 0.45 to 0.55.
- a concave surface is provided in the fixed surface.
- the ratio (HP / T) of the height of the fixed surface of the temporarily fixed substrate to the maximum thickness is preferably 0.1 to 0.5, more preferably 0.125 to 0.25. preferable.
- the thickness T is preferably 0.3 mm to 3 mm, and more preferably 0.5 to 1.5.
- the adhesive layer 3 is provided on the fixing surface 2 a of the temporary fixing substrate 2.
- adhesives include double-sided tapes and hot melt adhesives.
- various methods such as roll coating, spray coating, screen printing, and spin coating can be employed.
- FIG. 4B a large number of electronic components 4 are placed on the temporary fixing substrate 2, and the adhesive layer is cured to form the adhesive layer 3A.
- this hardening process is performed according to the property of an adhesive agent, a heating and ultraviolet irradiation can be illustrated.
- a liquid resin molding agent is poured to cure the resin molding agent.
- the electronic component 4 is fixed in the resin mold 6 as shown in FIG.
- 6b is a resin that fills the gap 5 of the electronic component
- 6a is a resin that covers the electronic component.
- Examples of the mold resin used in the present invention include epoxy resins, polyimide resins, polyurethane resins, and urethane resins.
- the electronic component and the mold resin are separated from the temporarily fixed substrate.
- This separation method is not limited.
- the electronic component and the resin mold can be separated from the temporarily fixed substrate by irradiating ultraviolet rays from the bottom surface 2b side of the temporarily fixed substrate.
- the material of the temporarily fixed substrate is not particularly limited, but preferably has mechanical strength and durability against chemicals.
- the temporarily fixed substrate is made of alumina, silicon nitride, aluminum nitride, or silicon oxide. These are easy to increase the density and have high durability against chemicals.
- the material constituting the temporarily fixed substrate is translucent alumina.
- a magnesium oxide powder having a purity of 99.9% or more (preferably 99.95% or more) and a magnesium oxide powder of 100 ppm or more and 300 ppm or less is added.
- high-purity alumina powder include high-purity alumina powder manufactured by Daimei Chemical Co., Ltd.
- the purity of the magnesium oxide powder is preferably 99.9% or more, and the average particle size is preferably 50 ⁇ m or less.
- alumina powder it is preferable to add 200 to 800 ppm of zirconia (ZrO 2 ) and 10 to 30 ppm of yttria (Y 2 O 3 ) to the alumina powder as a sintering aid.
- ZrO 2 zirconia
- Y 2 O 3 yttria
- the method for forming the temporarily fixed substrate is not particularly limited, and may be any method such as a doctor blade method, an extrusion method, or a gel cast method.
- the base substrate is manufactured using a gel cast method.
- a slurry containing a ceramic powder, a dispersion medium and a gelling agent is produced, and this slurry is cast and gelled to obtain a molded body.
- a release agent is applied to the mold, the mold is assembled, and the slurry is cast.
- the gel is cured in the mold to obtain a molded body, and the molded body is released from the mold. The mold is then washed.
- the gel molded body is dried, preferably calcined in the air, and then calcined in hydrogen.
- the sintering temperature during the main calcination is preferably 1700 to 1900 ° C., more preferably 1750 to 1850 ° C., from the viewpoint of densification of the sintered body.
- an additional annealing treatment can be performed to correct the warp.
- This annealing temperature is preferably within the maximum temperature ⁇ 100 ° C. during firing from the viewpoint of promoting the discharge of the sintering aid while preventing deformation and abnormal grain growth, and the maximum temperature is 1900 ° C. or less. More preferably it is.
- the annealing time is preferably 1 to 6 hours.
- a temporarily fixed substrate having a form as shown in FIG. 1 or FIG. 3 was produced. Specifically, first, a slurry in which the following components were mixed was prepared.
- the slurry was cast in an aluminum alloy mold at room temperature and then left at room temperature for 1 hour. Subsequently, it was left to stand at 40 ° C. for 30 minutes, and after solidification proceeded, it was released from the mold. Furthermore, it was left to stand at room temperature and then at 90 ° C. for 2 hours to obtain a plate-like powder compact.
- the obtained powder compact is calcined at 1100 ° C. in the air (preliminary firing), then fired at 1750 ° C. in an atmosphere of hydrogen 3: nitrogen 1 and then annealed under the same conditions to obtain a blank substrate. It was.
- High-precision polishing was performed on the produced blank substrate. First, the shape was adjusted by double-sided lapping with green carbon, and then double-sided lapping with diamond slurry was performed. The particle size of diamond was 3 ⁇ m. Finally, CMP processing using SiO 2 abrasive grains and diamond abrasive grains was performed only on one side, and cleaning was performed to obtain a 12-inch temporarily fixed substrate.
- the shape of the fixed surface when viewed in the cross section of the temporarily fixed substrate was changed as shown in Table 1.
- a flat surface having a width of 50 mm was provided, and in Comparative Example 4, a recess having a width of 50 mm and a depth of 0.1 mm was provided.
- the form of the fixed surface of the temporarily fixed substrate was controlled by the processing conditions of the single-side CMP.
- Examples 1 to 3 of the present invention a high yield was obtained in the molding process.
- the shape of the fixed surface is convex upward, but W 3/4 / W is as small as 0.43, a mold failure occurs in the central portion of the fixed surface, and the yield is high. Declined.
- the shape of the fixed surface is convex upward, but W 3/4 / W is as large as 0.57, a mold failure occurs at the peripheral portion of the fixed surface, and the yield is high. Declined.
- Comparative Example 3 a flat surface was provided at the center portion of the fixed surface, and a concave portion was provided in Comparative Example 4. However, in all cases, the yield was reduced.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Combinations Of Printed Boards (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
仮固定基板の横断面で見たときに固定面が仮固定基板から上に向かって凸形状をなすように仮固定基板が反っており、下記式(1)を満足することを特徴とする。
0.45 ≦ W3/4/W ≦ 0.55 ・・・ (1)
(式(1)において、
前記仮固定基板の前記横断面で見たときの前記固定面の幅をWとし、
前記仮固定基板の反りの基準面に対する前記固定面の高さが、前記基準面に対する前記固定面の高さの最大値の3/4以上になる領域の幅をW3/4とする。)
0.45 ≦ W3/4/W ≦ 0.55 ・・・ (1)
(式(1)において、
前記仮固定基板の前記横断面で見たときの前記固定面の幅をWとし、
前記仮固定基板の反りの基準面に対する前記固定面の高さが、前記基準面に対する前記固定面の高さの最大値の3/4以上になる領域の幅をW3/4とする。)
0.45 ≦ W3/4/W ≦ 0.55 ・・・ (1)
図1に示すように定盤1上に仮固定基板を設置する。そして、図2に示すように、仮固定基板2の固定面2aを8方向に向かって分割する。そして、基準点であるノッチ(notch)を0°として、45°刻みで方向を決める。そして、「0°-180°」「45°-225°」「90°-270°」「135°-315°」の4ラインに向かって測定を行う。具体的には、各ライン毎に、1mmピッチの等間隔に各測定ポイントを設定する。測定ポイント数は、例えば12インチ基板では、基板1枚あたり1200ポイント(=300ポイント×4ライン)になる。
なお、高さが3/4×P以上となる測定点が9個以下しか連続していない場合には、測定異常点として、「高さが3/4×P以上となる測定点の数」に含めない。
こうした接着剤としては、両面テープやホットメルト系の接着剤などを例示できる。また、接着剤層を仮固定基板上に設ける方法としては、ロール塗布、スプレー塗布、スクリーン印刷、スピンコートなど種々の方法を採用できる。
具体的には、まず、以下の成分を混合したスラリーを調製した。
(原料粉末)
・比表面積3.5~4.5m2/g、平均一次粒子径0.35~0.45μmのα-アルミナ粉末 100重量部
・MgO(マグネシア) 0.025重量部
・ZrO2(ジルコニア) 0.040重量部
・Y2O3(イットリア) 0.0015重量部
(分散媒)
・グルタル酸ジメチル 27重量部
・エチレングリコール 0.3重量部
(ゲル化剤)
・MDI樹脂 4重量部
(分散剤)
・高分子界面活性剤 3重量部
(触媒)
・N,N-ジメチルアミノヘキサノール 0.1重量部
なお、仮固定基板の固定面の形態は、片面CMPの加工条件によって制御した。
比較例1では、固定面の形状が上に向かって凸図形をなしているが、しかしW3/4/Wが0.43と小さく、固定面の中央部分でモールド不良が発生し、歩留りが低下した。
比較例2では、固定面の形状が上に向かって凸図形をなしているが、しかしW3/4/Wが0.57と大きく、固定面の周縁部分でモールド不良が発生し、歩留りが低下した。
Claims (8)
- 複数の電子部品を接着し、樹脂モールドで仮固定するための固定面と、前記固定面の反対側にある底面とを備える仮固定基板であって、
前記仮固定基板の横断面で見たときに前記固定面が前記仮固定基板から上に向かって凸形状をなすように前記仮固定基板が沿っており、
前記仮固定基板の前記横断面で見たときの前記固定面の幅をWとし、
前記仮固定基板の反りの基準面に対する前記固定面の高さが、前記基準面に対する前記固定面の高さの最大値の3/4以上になる領域の幅をW3/4としたときに、
下記式(1)を満足することを特徴とする、仮固定基板。
0.45 ≦ W3/4/W ≦ 0.55 ・・・ (1)
- 前記仮固定基板の前記横断面で見たときの前記固定面の形状が略放物線状であることを特徴とする、請求項1記載の仮固定基板。
- 前記仮固定基板がガラス、シリコンまたはセラミックスからなることを特徴とする請求項1または2記載の仮固定基板。
- 前記仮固定基板が透光性アルミナからなることを特徴とする、請求項3記載の仮固定基板。
- 複数の電子部品を接着し、樹脂モールドで仮固定するための固定面と、前記固定面の反対側にある底面とを備える仮固定基板であって、前記仮固定基板の横断面で見たときに前記固定面が前記仮固定基板から上に向かって凸形状をなすように前記仮固定基板が沿っており、
前記仮固定基板の前記横断面で見たときの前記固定面の幅をWとし、
前記仮固定基板の反りの基準面に対する前記固定面の高さが、前記基準面に対する前記固定面の高さの最大値の3/4以上になる領域の幅をW3/4としたときに、下記式(1)を満足する仮固定基板を準備し、前記仮固定基板の前記固定面に前記電子部品を接着し、前記樹脂モールドによって仮固定することを特徴とする、電子部品の仮固定方法。
0.45 ≦ W3/4/W ≦ 0.55 ・・・ (1)
- 前記仮固定基板の前記横断面で見たときの前記固定面の形状が略放物線状であることを特徴とする、請求項5記載の方法。
- 前記仮固定基板がガラス、シリコンまたはセラミックスからなることを特徴とする、請求項5または6記載の方法。
- 前記仮固定基板が透光性アルミナからなることを特徴とする、請求項7記載の方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201880015995.5A CN110462804B (zh) | 2017-03-30 | 2018-01-26 | 临时固定基板以及电子部件的临时固定方法 |
KR1020197031681A KR102519901B1 (ko) | 2017-03-30 | 2018-01-26 | 가고정 기판 및 전자 부품의 가고정 방법 |
JP2018534891A JP6430081B1 (ja) | 2017-03-30 | 2018-01-26 | 仮固定基板および電子部品の仮固定方法 |
US16/585,526 US20200027771A1 (en) | 2017-03-30 | 2019-09-27 | Temporary-fixing substrate and method for temporarily fixing electronic component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-066812 | 2017-03-30 | ||
JP2017066812 | 2017-03-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/585,526 Continuation US20200027771A1 (en) | 2017-03-30 | 2019-09-27 | Temporary-fixing substrate and method for temporarily fixing electronic component |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018179766A1 true WO2018179766A1 (ja) | 2018-10-04 |
Family
ID=63674950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/002371 WO2018179766A1 (ja) | 2017-03-30 | 2018-01-26 | 仮固定基板および電子部品の仮固定方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20200027771A1 (ja) |
JP (1) | JP6430081B1 (ja) |
KR (1) | KR102519901B1 (ja) |
CN (1) | CN110462804B (ja) |
TW (1) | TWI770110B (ja) |
WO (1) | WO2018179766A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007149991A (ja) * | 2005-11-28 | 2007-06-14 | Kyocera Corp | 回路モジュールの製造方法 |
JP2012062372A (ja) * | 2010-09-14 | 2012-03-29 | Nitto Denko Corp | 半導体装置製造用耐熱性粘着テープ及びそのテープを用いた半導体装置の製造方法。 |
US20160365319A1 (en) * | 2015-06-11 | 2016-12-15 | Samsung Electronics Co., Ltd. | Wafer level package |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS525889A (en) | 1975-07-04 | 1977-01-17 | Asahi Glass Co Ltd | Process for the preparation of an improved fluoropolymer containing io n-exchange groups |
JP4154306B2 (ja) * | 2003-09-29 | 2008-09-24 | 富士通株式会社 | リジット基板を用いた半導体装置の製造方法 |
JP5304112B2 (ja) | 2008-09-01 | 2013-10-02 | 日本電気硝子株式会社 | 薄膜付きガラス基板の製造方法 |
US20100066683A1 (en) * | 2008-09-17 | 2010-03-18 | Shih-Chang Chang | Method for Transferring Thin Film to Substrate |
JP2011023438A (ja) | 2009-07-14 | 2011-02-03 | Nippon Electric Glass Co Ltd | 基板接合体の製造方法 |
TWI630652B (zh) * | 2014-03-17 | 2018-07-21 | 斯克林集團公司 | 基板處理裝置及使用基板處理裝置之基板處理方法 |
DE102014106100A1 (de) * | 2014-04-30 | 2015-11-05 | Ev Group E. Thallner Gmbh | Verfahren und Vorrichtung zum Vergleichmäßigen eines Substratstapels |
US9475272B2 (en) * | 2014-10-09 | 2016-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | De-bonding and cleaning process and system |
JP6557960B2 (ja) * | 2014-10-31 | 2019-08-14 | 日立化成株式会社 | 半導体装置製造用部材、及びそれを用いた半導体装置の製造方法 |
CN107078075A (zh) * | 2014-11-05 | 2017-08-18 | Ev 集团 E·索尔纳有限责任公司 | 用于对产品衬底进行涂层的方法和装置 |
KR102483237B1 (ko) * | 2014-12-10 | 2022-12-30 | 가부시키가이샤 니콘 | 기판 겹침 장치 및 기판 겹침 방법 |
KR20160085967A (ko) * | 2015-01-08 | 2016-07-19 | 삼성디스플레이 주식회사 | 곡면형 표시장치용 기판 및 이의 제조방법 |
JP2016139751A (ja) | 2015-01-29 | 2016-08-04 | 住友金属鉱山株式会社 | サファイア基板の研磨方法及び得られるサファイア基板 |
-
2018
- 2018-01-24 TW TW107102516A patent/TWI770110B/zh active
- 2018-01-26 JP JP2018534891A patent/JP6430081B1/ja active Active
- 2018-01-26 CN CN201880015995.5A patent/CN110462804B/zh active Active
- 2018-01-26 KR KR1020197031681A patent/KR102519901B1/ko active IP Right Grant
- 2018-01-26 WO PCT/JP2018/002371 patent/WO2018179766A1/ja active Application Filing
-
2019
- 2019-09-27 US US16/585,526 patent/US20200027771A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007149991A (ja) * | 2005-11-28 | 2007-06-14 | Kyocera Corp | 回路モジュールの製造方法 |
JP2012062372A (ja) * | 2010-09-14 | 2012-03-29 | Nitto Denko Corp | 半導体装置製造用耐熱性粘着テープ及びそのテープを用いた半導体装置の製造方法。 |
US20160365319A1 (en) * | 2015-06-11 | 2016-12-15 | Samsung Electronics Co., Ltd. | Wafer level package |
Also Published As
Publication number | Publication date |
---|---|
TWI770110B (zh) | 2022-07-11 |
TW201838041A (zh) | 2018-10-16 |
CN110462804A (zh) | 2019-11-15 |
KR102519901B1 (ko) | 2023-04-07 |
JP6430081B1 (ja) | 2018-11-28 |
KR20190134682A (ko) | 2019-12-04 |
US20200027771A1 (en) | 2020-01-23 |
JPWO2018179766A1 (ja) | 2019-04-04 |
CN110462804B (zh) | 2023-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101142000B1 (ko) | 정전척 | |
US7646580B2 (en) | Electrostatic chuck and wafer holding member and wafer treatment method | |
JP4942364B2 (ja) | 静電チャックおよびウェハ保持部材並びにウェハ処理方法 | |
JP2010016176A (ja) | 試料保持具 | |
US9538653B2 (en) | Insulating substrates including through holes | |
JP6430081B1 (ja) | 仮固定基板および電子部品の仮固定方法 | |
KR101642671B1 (ko) | 반도체용 복합 기판의 핸들 기판 및 반도체용 복합 기판 | |
JP6503689B2 (ja) | 静電チャック装置およびその製造方法 | |
JP6420023B1 (ja) | 仮固定基板および電子部品のモールド方法 | |
TWI815002B (zh) | 暫時固定基板、複合基板及電子構件的剝離方法 | |
JP7266036B2 (ja) | 仮固定基板、仮固定方法および電子部品の製造方法 | |
JP2014065631A (ja) | セラミックス接合体及びその製造方法 | |
JP4795529B2 (ja) | セラミック基板、薄膜回路基板およびセラミック基板の製造方法 | |
JP6994863B2 (ja) | セラミックス部材の製造方法 | |
JP7303081B2 (ja) | 仮固定基板、複合基板および電子部品の剥離方法 | |
KR102270392B1 (ko) | 웨이퍼 연마 헤드, 웨이퍼 연마 헤드의 제조방법 및 그를 구비한 웨이퍼 연마 장치 | |
JP7432040B2 (ja) | 窒化ケイ素焼結体 | |
JP2022048078A (ja) | 複合焼結体、半導体製造装置部材および複合焼結体の製造方法 | |
JP2023149989A (ja) | 仮固定基板、仮固定基板の製造方法、および電子部品の仮固定方法 | |
JP2007080892A (ja) | 半導体加熱ヒータ用容器及びそれを備えた半導体製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2018534891 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18774780 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20197031681 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18774780 Country of ref document: EP Kind code of ref document: A1 |