WO2018176546A1 - 量子点发光二极管显示面板及其制备方法、显示装置 - Google Patents

量子点发光二极管显示面板及其制备方法、显示装置 Download PDF

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WO2018176546A1
WO2018176546A1 PCT/CN2017/082053 CN2017082053W WO2018176546A1 WO 2018176546 A1 WO2018176546 A1 WO 2018176546A1 CN 2017082053 W CN2017082053 W CN 2017082053W WO 2018176546 A1 WO2018176546 A1 WO 2018176546A1
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quantum dot
pixel
layer
display panel
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王威
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
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    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a quantum dot light emitting diode display panel and a method for fabricating the same, and to a display device including the display panel.
  • the OLED (Organic Electroluminescent Diode) display device has the characteristics of self-luminous, wide viewing angle, high luminous efficiency, low power consumption, fast response time, good low temperature characteristics, simple manufacturing process, and low cost. Flexible OLED display devices have far-reaching effects on the application of wearable devices because of their light weight, flexibility, and portability. In the future, flexible OLED display devices will be more widely used with the continuous penetration of personal smart terminals. .
  • the core component of the OLED display device is an OLED display panel.
  • the structure of the OLED display panel generally includes: a TFT array substrate, an anode layer sequentially formed on the TFT substrate, a pixel defining layer, a first common layer, a light emitting layer, a second common layer, and Cathode layer.
  • the working principle of the OLED display panel is that under the action of the electric field between the anode and the cathode, holes are transmitted to the luminescent layer through the first common layer, electrons are transmitted to the luminescent layer through the second common layer, and holes and electrons are within the luminescent layer. Composite and then illuminate.
  • the OLED display panel usually uses a mixture of three primary colors of R, G, and B to achieve different color display effects. Therefore, one pixel of the OLED display panel usually includes three light-emitting units of R, G, and B. Generally, each pixel has R, The three light-emitting units G and B can be individually controlled by the drive circuit.
  • the FMM (Fine Metal Mask) evaporation process is generally used, which has two disadvantages: 1. The utilization rate of a large amount of luminescent materials in the evaporation is low, and the increase Cost; 2. The highest resolution that can be achieved by FMM evaporation process is about 500PPI. If you want to further increase the OLED pixel density, you must improve the alignment accuracy of FMM evaporation and reduce the pixel pitch. In the middle, it is easy to have the problem of color mixing.
  • the present invention provides a quantum dot light emitting diode display panel to reduce the manufacturing process difficulty of the display panel and improve the resolution of the display panel.
  • a quantum dot light emitting diode display panel comprising a TFT array substrate and a plurality of pixel structures arranged on the TFT array substrate, wherein the pixel structure comprises a layer stacked in a direction away from the TFT array substrate An electrode, a hole transporting functional layer, a quantum dot emitting layer, an electron transporting functional layer, and a second electrode; the quantum dot emitting layer comprising an organic solvent material and a quantum dot material dispersed in the organic solvent material, the quantum The point material emits light under conditions of electro-excitation.
  • the pixel structure is set as a red sub-pixel, a green sub-pixel or a blue sub-pixel, and a quantum dot material emitting red monochromatic light is disposed in the quantum dot light-emitting layer of the red sub-pixel, and the green sub-pixel A quantum dot material emitting green monochromatic light is disposed in the quantum dot light-emitting layer, and a quantum dot material emitting blue monochromatic light is disposed in the quantum dot light-emitting layer of the blue sub-pixel.
  • the pixel structure is further configured as a white sub-pixel, and the quantum dot light-emitting layer of the white sub-pixel is provided with a quantum dot material that emits red monochromatic light, green monochromatic light, and blue monochromatic light.
  • the quantum dot material is selected from one or more of CdS, CdSe, CdTe, ZnS and ZnSe.
  • the material of the second electrode is ITO, AZO or FTO.
  • the second electrode is further provided with an inorganic thin film protective layer.
  • the present invention also provides a method for fabricating a quantum dot light emitting diode display panel as described above, comprising: providing a TFT array substrate and preparing a plurality of first electrodes distributed in an array on the TFT array substrate; preparing on the TFT array substrate a pixel defining layer; applying a yellow etching process to etch a sub-pixel region in the pixel defining layer; preparing a pixel structure in the sub-pixel region; wherein the quantum dot emitting layer in the pixel structure is coated The cloth process is prepared.
  • the step of preparing the sub-pixel region to form a pixel structure specifically includes: depositing a hole transport functional layer on the first electrode in the sub-pixel region; applying a coating process in the hole transport functional layer The upper layer is coated to form a quantum dot light-emitting layer; and the quantum dot light-emitting layer is sequentially deposited by vapor deposition to form an electron transport functional layer and a second electrode.
  • the method for preparing the quantum dot light emitting diode display panel specifically includes the steps of: providing a TFT array substrate and preparing a plurality of first electrodes distributed in an array on the TFT array substrate; S2, preparing pixels on the TFT array substrate Defining a layer; S3, applying a first yellow lithography process, etching a first color sub-pixel region in the pixel defining layer; S4, preparing a first color sub-pixel in the first color sub-pixel region a pixel structure; S5, applying a second yellow etching process, etching a second color sub-pixel region in the pixel defining layer; S6, preparing a second color sub-pixel in the second color sub-pixel region a pixel structure; S7, applying a third yellow lithography process, etching a third color sub-pixel region in the pixel defining layer; S8, preparing a third color sub-pixel in the third color sub-pixel region Pixel structure.
  • the quantum dot light emitting diode display panel adopts a quantum dot light emitting layer in the pixel structure, and utilizes the function of electroluminescent of the quantum dot material to improve the color purity and luminous efficiency of the pixel structure.
  • the quantum dot light-emitting layer can be prepared by using a coating process, and the light-emitting layer is prepared by using the FMM evaporation process in the prior art, which not only reduces waste of the light-emitting material, but also saves cost;
  • the coating process reduces the difficulty of the display panel process as a whole, and when preparing a high-resolution display panel, the problem of color mixing of adjacent pixels can be effectively prevented.
  • FIG. 1 is a schematic structural diagram of a QLED display panel according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a pixel structure in an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of a QLED display panel in another preferred embodiment of the present invention.
  • FIG. 4 is a process flow diagram of a method for fabricating a QLED display panel according to an embodiment of the present invention.
  • 5a to 5i are exemplary illustrations of device structures obtained in various steps in the preparation method of FIG. 4;
  • FIG. 6 is a schematic structural diagram of a display device according to an embodiment of the present invention.
  • the QLED display panel includes a TFT array substrate 1 and a plurality of pixel structures arranged on the TFT array substrate 1. 2 (only one of them is exemplarily shown in the drawings).
  • a plurality of thin film transistors (TFTs) 1a are disposed in the array in the TFT array substrate 1, and each of the thin film transistors 1a controls one pixel structure 2.
  • the TFT array substrate 1 includes a base substrate 10 and a gate electrode 11, a source electrode 12, a drain electrode 13, and an active layer 14 formed on the base substrate 10.
  • the active layer 14 is disposed on the base substrate 10 and a buffer layer 15 is disposed between the active layer 14 and the base substrate 10.
  • the active layer 14 is covered with a gate insulating layer 16 disposed on the gate insulating layer 16 and opposite to the active layer 14 .
  • the gate electrode 11 is covered with an interlayer dielectric layer 17, and the source electrode 12 and the drain electrode 13 are spaced apart from each other on the interlayer dielectric layer 17, and the source electrode 12 and the drain electrode 13 are respectively
  • the active layer 14 is electrically connected through via holes provided in the interlayer dielectric layer 17 and the gate insulating layer 16.
  • the base substrate 10 can optionally use a flexible base substrate, thereby preparing a flexible QLED display panel that can be flexibly applied in a wearable device or a smart mobile terminal.
  • the pixel structure 2 includes a first electrode 21 and a second electrode 25, and a light-emitting function layer 2a sandwiched between the first electrode 21 and the second electrode 25.
  • the pixel structure 2 includes a first electrode 21, a hole transport layer (HTL) 22, and a quantum dot light emitting layer (Emissive Layer) which are sequentially stacked in a direction away from the TFT array substrate 1.
  • EML hole transport layer
  • ETL Electro Transport Layer
  • the first electrode 21 is disposed on the flat layer 19, and is electrically connected to the drain electrode 13 of the thin film transistor 1a through a via hole provided in the passivation layer 18 and the flat layer 19.
  • the material of the first electrode 21 may be selected from ITO, AZO or FTO.
  • the pixel defining layer 26 is further disposed on the flat layer 19 , and the pixel defining layer 26 is disposed on the first electrode 21 .
  • the pixel defining layer 26 includes an opening portion 261 exposing the first electrode 21 and a spacer portion 262 for spacing adjacent the two first electrodes 21.
  • the light emitting function layer of the pixel structure 2 is disposed in the opening portion 261.
  • the hole transport function layer 22 includes a hole injection layer 221 and a hole transport layer 222 which are sequentially disposed in a direction away from the first electrode 21, and the hole injection layer 221 and the hole transport layer 222 The functions are similar and can be collectively referred to as the hole transport functional layer 22.
  • the quantum dot light-emitting layer 23 comprises an organic solvent material and a quantum dot material dispersed in the organic solvent material, and the quantum dot material emits light under conditions of electro-excitation.
  • Quantum Dots also known as nanocrystals, are nanoparticles composed of Group II-VI or Group III-V elements.
  • the quantum dot particle size is generally between 1 and 20 nm. Since electrons and holes are quantum confinement, the continuous band structure becomes a discrete energy level structure with molecular characteristics, which can be excited under electro-optic conditions. Fluorescence can be emitted afterwards, and the luminescence of the quantum dots has good fluorescence intensity and stability.
  • the emission spectrum of a quantum dot can be controlled by changing the size of the quantum dot. By changing the size of the quantum dot and its chemical composition, its emission spectrum can cover the entire visible region. Taking CdTe quantum dots as an example, when its particle size is grown from 2.5 nm to 4.0 nm, their emission wavelengths can be red shifted from 510 nm to 660 nm.
  • the quantum dot material may be selected from one or more of CdS, CdSe, CdTe, ZnS, and ZnSe.
  • the electron transporting functional layer 24 includes an electron injecting layer 241 and an electron transporting layer 242 disposed in a direction away from the second electrode 25.
  • the electron injecting layer 241 and the electron transporting layer 242 have similar functions and can be collectively referred to as The function layer 24 is electronically transmitted.
  • the second electrode 25 of each pixel structure 2 may be independent of each other.
  • all the second electrodes 25 of the plurality of pixel structures 2 may be integrally connected to each other, and the second electrodes 25 of all the pixel structures 2 are uniformly controlled. Individual control of each pixel structure 2 is achieved by controlling the first electrode 21 of each pixel structure 2 separately.
  • an inorganic thin film protective layer 27 is further disposed on the second electrode 25.
  • the material of the second electrode 25 may be selected as ITO, AZO or FTO, and the second electrode 25 may also function as a protective film, that is, in this case.
  • the inorganic thin film protective layer 27 can be omitted.
  • the display panel is usually composed of a mixture of three primary colors of R, G, and B to realize different color display effects. Therefore, one pixel of the QLED display panel provided in the above embodiment generally includes three light-emitting units of R, G, and B. That is, as shown in FIG. 3, the pixel structure 2 may be disposed as a red sub-pixel 2R, a green sub-pixel 2G, or a blue sub-pixel 2B, and the red sub-pixel 2R, the green sub-pixel 2G, and the blue sub-pixel are sequentially arranged. 2B constitutes a pixel unit.
  • quantum dot emitting layer of the red sub-pixel 2R A quantum dot material emitting red monochromatic light is disposed in the quantum dot emitting layer of the green sub-pixel 2G, and a quantum dot material emitting green monochromatic light is disposed in the quantum dot emitting layer of the blue sub-pixel 2B
  • a quantum dot material emitting blue monochromatic light is provided.
  • three light-emitting units of R, G, and B of each pixel unit can be individually controlled by a driving circuit to realize individual driving of each of the light-emitting units.
  • the pixel structure 2 is further configured as a white sub-pixel, and at this time, one pixel unit includes, in addition to the red sub-pixel 2R, the green sub-pixel 2G, and the blue sub-pixel 2B as described above, A white subpixel.
  • the quantum dot light-emitting layer of the white sub-pixel is simultaneously provided with a quantum dot material that emits red monochromatic light, green monochromatic light, and blue monochromatic light.
  • the QLED display panel further includes a package structure layer 3, and the package structure layer 3 is disposed on the pixel structure 2 for packaging the pixel structure 2 to the The TFT array substrate 1 is described.
  • the method for preparing an OLED display panel as described above is first described.
  • the method first provides a TFT array substrate and prepares a plurality of first electrodes distributed in an array on the TFT array substrate.
  • a pixel definition layer is then formed on the TFT array substrate.
  • a yellow light etching process is applied to etch a sub-pixel region in the pixel defining layer.
  • a pixel structure is formed in the sub-pixel region.
  • the quantum dot light-emitting layer in the pixel structure is prepared by a coating process.
  • the method for preparing the quantum dot light emitting diode display panel specifically includes the following steps:
  • a TFT array substrate 1 is provided and a plurality of first electrodes 21 distributed in an array are prepared on the TFT array substrate 1.
  • the TFT array substrate 1 can select an existing low-temperature polysilicon type array substrate, or an oxide thin film transistor type array substrate, or a conventional polysilicon type array substrate.
  • the first electrode 21 may be prepared by etching a metal thin film by a photolithography process to form a plurality of patterned first electrodes 21.
  • a pixel defining layer 26 is formed on the TFT array substrate 1.
  • the pixel defining layer 26 is prepared using a non-conductive material and may be a non-conductive organic material or an inorganic material.
  • a first yellow sub-pixel region is etched in the pixel defining layer 26 by applying a first yellow etching process.
  • the opening portion 261 is formed in the pixel defining layer 26, and the opening portion 261 corresponds to the sub-pixel region.
  • the first color sub-pixel region is set as a red sub-pixel.
  • the step specifically includes: firstly depositing a hole transport function layer 22 on the first electrode 21 in the sub-pixel region; and then applying a coating process on the hole transport function layer.
  • the quantum dot light-emitting layer 23 is formed by coating on 22; finally, an electron transport functional layer 24 and a second electrode 25 are formed by vapor deposition on the quantum dot light-emitting layer 23 in this order.
  • the quantum dot material in this step is prepared by using a quantum dot material capable of emitting red monochromatic light to obtain a red sub-pixel 2R.
  • the quantum dot material is first dispersed in an organic solvent to form a precursor mixture, and then passed through a slit coating or a spin coating process.
  • the precursor mixture is coated on the hole transport functional layer 22, and the quantum dot light-emitting layer 23 is further prepared by a drying or annealing process.
  • a second yellow photolithography process is applied to etch a second color sub-pixel region in the pixel defining layer 26.
  • the second color sub-pixel area is set as a green sub-pixel.
  • the second etching process is performed after the preparation of the first color sub-pixel structure is completed. Since the first color sub-pixel structure has a protective layer, the subsequent process does not damage the first color sub-pixel structure.
  • the material of the second electrode 25 is selected to be ITO, AZO or FTO, which can also function as a protective film, so that it is not necessary to separately prepare an inorganic thin film protective layer.
  • the quantum dot material in this step is prepared by using a quantum dot material that emits green monochromatic light to obtain a green sub-pixel 2G. The specific process is performed with reference to step S4.
  • a third color sub-pixel region is etched in the pixel defining layer 26 by applying a third yellow etching process.
  • the third color sub-pixel region is set as a blue sub-pixel.
  • the quantum dot material in this step is prepared by using a quantum dot material capable of emitting blue monochromatic light to obtain a blue sub-pixel 2B.
  • the specific process is performed with reference to step S4.
  • a package structure layer 3 is prepared on the pixel structure 2.
  • the preparation of the pixel structures of different colors is sequentially performed, that is, the preparation of the red sub-pixels is completed first, and then the preparation of the green sub-pixels is completed, and finally the blue sub-pixels are prepared.
  • the order of the three colors of red, green and blue is interchangeable.
  • the quantum dot light emitting diode display panel provided by the above embodiment adopts a quantum dot light emitting layer in the pixel structure, and utilizes the function of electroluminescent of the quantum dot material to improve the color purity and light emission of the pixel structure. effectiveness.
  • the quantum dot light-emitting layer can be prepared by using a coating process, and the light-emitting layer is prepared by using the FMM evaporation process in the prior art, which not only reduces waste of the light-emitting material, but also saves cost;
  • the coating process reduces the difficulty of the display panel process as a whole, and when the high-resolution display panel is prepared, the problem of color mixing of adjacent pixels can be effectively prevented, and the display panel with higher separation rate is favored.
  • the embodiment further provides a display device.
  • the display device includes a driving unit 200 and a display panel 100.
  • the driving unit 200 provides a driving signal to the display panel 100 to enable the display panel. 100 display screen.
  • the display panel 100 adopts the QLED display panel provided by the above embodiments of the present invention.

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Abstract

提供一种量子点发光二极管显示面板，包括薄膜晶体管（TFT）阵列基板（1）以及阵列设置在该TFT阵列基板（1）上的多个像素结构（2），其特征在于，所述像素结构（2）包括按照远离所述TFT阵列基板（1）的方向依次叠层设置的第一电极（21）、空穴传输功能层（22）、量子点发光层（23）、电子传输功能层（24）和第二电极（25）；所述量子点发光层（23）包括有机溶剂材料和分散在所述有机溶剂材料中的量子点材料，所述量子点材料在电致激发的条件下发光。提供一种如上所述量子点发光二极管显示面板的制备方法，其中，所述像素结构（2）中的量子点发光层（23）通过涂布工艺制备获得。

Description

量子点发光二极管显示面板及其制备方法、显示装置 技术领域
本发明涉及显示器技术领域，尤其涉及一种量子点发光二极管显示面板及其制备方法，还涉及包含该显示面板的显示装置。
背景技术
OLED(有机电致发光二极管)显示装置具有自发光、广视角、发光效率高、功耗低、响应时间快、低温特性好、制造工艺简单、成本低等特性。柔性OLED显示装置以其重量轻、可弯曲、便于携带的优点，给可穿戴式设备的应用带来深远的影响，未来柔性OLED显示装置将随着个人智能终端的不断渗透而得到更加广泛的应用。
OLED显示装置的核心部件是OLED显示面板，OLED显示面板的结构通常包括：TFT阵列基板以及依次制作于TFT基板上的阳极层、像素定义层、第一公共层、发光层、第二公共层以及阴极层。OLED显示面板的工作原理是在阳极和阴极之间电场的作用下，空穴通过第一公共层传输到发光层，电子通过第二公共层传输到发光层，空穴和电子在发光层之内复合进而发光。OLED显示面板通常是由R、G、B三原色的混合来实现不同色彩的显示效果，因此OLED显示面板的一个像素通常包含R、G、B三个发光单元，通常地，每一个像素的R、G、B三个发光单元能够通过驱动电路单独控制。
随着显示面板分辨率的提高，单位面积内发光单元的个数也在不断增加，导致发光单元之间的间隔距离不断减小，OLED显示面板的制备工艺也碰到了一些难题。例如，OLED像素结构的发光单元制备过程中，一般采用FMM(Fine Metal Mask，精细金属掩膜版)蒸镀工艺，其存在两个不足：1、蒸镀中大量的发光材料利用率低，增加成本；2、目前采用FMM蒸镀工艺所能达到的最高分辨率为500PPI左右，若想进一步提高OLED像素密度，必须提高FMM蒸镀的对位精度，并且由于像素间距减小而导致蒸镀工艺中极易出现混色的问题。
发明内容
鉴于现有技术存在的不足，本发明提供了一种量子点发光二极管显示面板，以降低显示面板的制备工艺难度以及提高显示面板的分辨率。
为了达到上述的目的，本发明采用了如下的技术方案：
一种量子点发光二极管显示面板，包括TFT阵列基板以及阵列设置在该TFT阵列基板上的多个像素结构，其中，所述像素结构包括按照远离所述TFT阵列基板的方向依次叠层设置的第一电极、空穴传输功能层、量子点发光层、电子传输功能层和第二电极；所述量子点发光层包括有机溶剂材料和分散在所述有机溶剂材料中的量子点材料，所述量子点材料在电致激发的条件下发光。
其中，所述像素结构被设置为红色子像素、绿色子像素或蓝色子像素，所述红色子像素的量子点发光层中设置有发出红色单色光的量子点材料，所述绿色子像素的量子点发光层中设置有发出绿色单色光的量子点材料，所述蓝色子像素的量子点发光层中设置有发出蓝色单色光的量子点材料。
其中，所述像素结构还被设置为白色子像素，所述白子像素的量子点发光层中设置有发出红色单色光、绿色单色光以及蓝色单色光的量子点材料。
其中，所述量子点材料选自CdS、CdSe、CdTe、ZnS和ZnSe中的一种或多种。
其中，所述第二电极的材料为ITO、AZO或FTO。
其中，多个像素结构的所有第二电极相互连接形成一体。
其中，所述第二电极上还设置有无机薄膜保护层。
本发明还提供了如上所述的量子点发光二极管显示面板的制备方法，其包括：提供TFT阵列基板并在TFT阵列基板上制备阵列分布的多个第一电极；在所述TFT阵列基板上制备像素定义层；应用黄光刻蚀工艺，在所述像素定义层中刻蚀出子像素区域；在所述子像素区域制备形成像素结构；其中，所述像素结构中的量子点发光层通过涂布工艺制备获得。
其中，所述子像素区域制备形成像素结构的步骤具体包括：在所述子像素区域中位于第一电极上蒸镀沉积形成空穴传输功能层；应用涂布工艺在所述空穴传输功能层上涂布形成量子点发光层；在所述量子点发光层上依次蒸镀沉积形成电子传输功能层和第二电极。
其中，所述量子点发光二极管显示面板的制备方法具体包括步骤：S1、提供TFT阵列基板并在TFT阵列基板上制备阵列分布的多个第一电极；S2、在所述TFT阵列基板上制备像素定义层；S3、应用第一次黄光刻蚀工艺，在所述像素定义层中刻蚀出第一颜色子像素区域；S4、在所述第一颜色子像素区域中制备形成第一颜色子像素结构；S5、应用第二次黄光刻蚀工艺，在所述像素定义层中刻蚀出第二颜色子像素区域；S6、在所述第二颜色子像素区域中制备形成第二颜色子像素结构；S7、应用第三次黄光刻蚀工艺，在所述像素定义层中刻蚀出第三颜色子像素区域；S8、在所述第三颜色子像素区域中制备形成第三颜色子像素结构。
相比于现有技术，本发明实施例提供的量子点发光二极管显示面板，像素结构中采用量子点发光层，利用量子点材料电致发光的功能，提高了像素结构发光的色纯度和发光效率。进一步地，其制备工艺中，量子点发光层可以采用涂布工艺制备获得，相比于现有技术中采用FMM蒸镀工艺制备发光层，其不仅减少了发光材料的浪费，节省成本；并且采用涂布工艺，整体上降低了显示面板工艺的难度，在制备高分辨率的显示面板时，可以有效地防止相邻像素出现混色的问题。
附图说明
图1是本发明实施例提供的QLED显示面板的结构示意图；
图2是本发明实施例中的像素结构的结构示意图；
图3是本发明另一优选实施例中的QLED显示面板的结构示意图；
图4是本发明实施例提供的QLED显示面板的制备方法的工艺流程图；
图5a至5i是如图4的制备方法中各步骤得到的器件结构的示例性图示；
图6是本发明实施例提供的显示装置的结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。
在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。
本实施例首先提供了一种量子点发光二极管(QLED)显示面板，参阅图1和图2，所述QLED显示面板包括TFT阵列基板1以及阵列设置在该TFT阵列基板1上的多个像素结构2(附图中仅示例性示出了其中的一个)。所述TFT阵列基板1中阵列设置有多个薄膜晶体管(TFT)1a，每一薄膜晶体管1a对应控制一个像素结构2。
具体地，如图1所示，所述TFT阵列基板1包括衬底基板10以及形成在衬底基板10上的栅极11、源极12、漏极13和有源层14。其中，所述有源层14设置在衬底基板10上并且有源层14与衬底基板10之间设置有缓冲层15。所述有源层14上覆设有栅极绝缘层16，所述栅极11设置在所述栅极绝缘层16并且相对位于所述有源层14上方。所述栅极11上覆设有层间介质层17，所述源极12和漏极13相互间隔地设置在所述层间介质层17上，并且，所述源极12和漏极13分别通过设置在所述层间介质层17和所述栅极绝缘层16中的过孔电性连接到所述有源层14。进一步地，所述层间介质层17上还依次设置有钝化层18和平坦层19。进一步地，所述衬底基板10可选择使用柔性的衬底基板，由此制备形成可弯曲的柔性QLED显示面板，其可以方便地应用在可穿戴式设备或者是智能移动终端中。
参阅图1和图2，所述像素结构2包括第一电极21和第二电极25以及夹层设置在第一电极21和第二电极25之间的发光功能层2a。具体地，所述像素结构2包括按照远离所述TFT阵列基板1的方向依次叠层设置的第一电极21、空穴传输功能层(Hole Transport Layer，HTL)22、量子点发光层(Emissive Layer，EML)23、电子传输功能层(Electron Transport Layer，ETL)24和第二电极25。
其中，所述第一电极21设置在所述平坦层19上，并且通过设置在所述钝化层18和平坦层19中的过孔电性连接到所述薄膜晶体管1a的漏极13。所述第一电极21的材料可以选择为ITO、AZO或FTO。
其中，所述平坦层19上还设置有像素定义层26，所述像素定义层26覆设于所述第一电极21上。所述像素定义层26包括暴露出所述第一电极21的开口部261和用于间隔相邻两个所述第一电极21的间隔部262。所述像素结构2的发光功能层设置在所述开口部261中。
其中，所述空穴传输功能层22包括按照远离所述第一电极21的方向依次设置的空穴注入层221和空穴传输层222，所述空穴注入层221和空穴传输层222的功能相近，可以统称为空穴传输功能层22。
其中，所述量子点发光层23包括有机溶剂材料和分散在所述有机溶剂材料中的量子点材料，所述量子点材料在电致激发的条件下发光。量子点(Quantum Dots，QDs)，又可以称纳米晶，是一种由II-VI族或III-V族元素组成的纳米颗粒。量子点的粒径一般介于1～20nm之间，由于电子和空穴被量子限域，连续的能带结构变成具有分子特性的分立能级结构，其可以在电致的条件下受激后可以发射荧光，量子点的发光具有良好的荧光强度和稳定性。量子点的发射光谱可以通过改变量子点的尺寸大小来控制，通过改变量子点的尺寸和它的化学组成可以使其发射光谱覆盖整个可见光区。以CdTe量子点为例，当它的粒径从2.5nm生长到4.0nm时，它们的发射波长可以从510nm红移到660nm。本实施例中，所述量子点材料可以选自CdS、CdSe、CdTe、ZnS和ZnSe中的一种或多种。
其中，所述电子传输功能层24包括按照远离所述第二电极25的方向依次设置的电子注入层241和电子传输层242，所述电子注入层241和电子传输层242的功能相近，可以统称为电子传输功能层24。
其中，对于所述第二电极25，其可以是每一个像素结构2的第二电极25分别相互独立。在一些优选的实施例中，如图3所示，也可以是将多个像素结构2的所有第二电极25相互连接形成一体，所有像素结构2的第二电极25统一控制，此时，通过分别控制每一像素结构2的第一电极21来实现每一像素结构2的单独控制。
通常地，如图1所示，为了保护像素结构2，所述第二电极25上还设置有无机薄膜保护层27。在一些优选的实施例中，如图3所示，可以将第二电极25的材料选择为ITO、AZO或FTO，此时第二电极25还可以起到保护膜的作用，即，在此情况下，可以省略掉无机薄膜保护层27。
其中，显示面板通常是由R、G、B三原色的混合来实现不同色彩的显示效果，因此如上实施例提供的QLED显示面板的一个像素通常包含R、G、B三个发光单元。即，如图3所示，所述像素结构2可以被设置为红色子像素2R、绿色子像素2G或蓝色子像素2B，依次排列的红色子像素2R、绿色子像素2G和蓝色子像素2B构成一个像素单元。其中，所述红色子像素2R的量子点发光层 中设置有发出红色单色光的量子点材料，所述绿色子像素2G的量子点发光层中设置有发出绿色单色光的量子点材料，所述蓝色子像素2B的量子点发光层中设置有发出蓝色单色光的量子点材料。通常地，每一个像素单元的R、G、B三个发光单元能够通过驱动电路单独控制，实现每一发光单元的单独驱动。
在另外的实施例中，所述像素结构2还被设置为白色子像素，此时，一个像素单元除了包括如上所述的红色子像素2R、绿色子像素2G和蓝色子像素2B，还包括一个白色子像素。所述白子像素的量子点发光层中同时设置有发出红色单色光、绿色单色光以及蓝色单色光的量子点材料。
进一步，如图1和图3所示，所述QLED显示面板还包括封装结构层3，所述封装结构层3覆设于所述像素结构2上，用于将所述像素结构2封装到所述TFT阵列基板1上。
下面介绍如上所述的OLED显示面板的制备方法，该方法首先是提供TFT阵列基板并在TFT阵列基板上制备阵列分布的多个第一电极。然后在所述TFT阵列基板上制备像素定义层。进一步地应用黄光刻蚀工艺，在所述像素定义层中刻蚀出子像素区域。最后在所述子像素区域制备形成像素结构。其中，所述像素结构中的量子点发光层通过涂布工艺制备获得。
其中，参阅图4、图5a至5i，所述量子点发光二极管显示面板的制备方法具体包括以下步骤：
S1、如图5a所示，提供TFT阵列基板1并在TFT阵列基板1上制备阵列分布的多个第一电极21。TFT阵列基板1可以选择现有的低温多晶硅型的阵列基板，或者是氧化物薄膜晶体管型的阵列基板，或者传统的多晶硅型阵列基板。第一电极21的制备可以是通过光刻工艺将金属薄膜刻蚀形成图案化的多个第一电极21。
S2、如图5b所示，在所述TFT阵列基板1上制备像素定义层26。所述像素定义层26采用不导电材料制备获得，可以是不导电的有机材料或无机材料。
S3、如图5c所示，应用第一次黄光刻蚀工艺，在所述像素定义层26中刻蚀出第一颜色子像素区域。具体地，在所述像素定义层26中刻蚀形成开口部261，开口部261即对应于子像素区域，其中本实施例中，所述第一颜色子像素区域设置为红色子像素。
S4、如图5d所示，在所述第一颜色子像素区域(对应于开口部261)中制 备形成第一颜色子像素结构。结合图2的结构示意图，该步骤具体包括：首先在所述子像素区域中位于第一电极21上蒸镀沉积形成空穴传输功能层22；然后应用涂布工艺在所述空穴传输功能层22上涂布形成量子点发光层23；最后在所述量子点发光层23上依次蒸镀沉积形成电子传输功能层24和第二电极25。本实施例中，该步骤中的量子点材料采用可发出红色单色光的量子点材料，制备获得红色子像素2R。其中，在量子点发光层23的制备过程中，首先将量子点材料分散在有机溶剂中形成前驱体混合液，然后通过狭缝涂布(slit coating)或旋转涂布(spin coating)工艺在空穴传输功能层22上涂布前驱体混合液，再进一步地通过烘干或退火工艺制备得到量子点发光层23。
S5、如图5e所示，应用第二次黄光刻蚀工艺，在所述像素定义层26中刻蚀出第二颜色子像素区域。其中本实施例中，所述第二颜色子像素区域设置为绿色子像素。需要说明的是，在完成第一颜色子像素结构的制备之后才进行第二次刻蚀工艺，由于第一颜色子像素结构上具有保护层，因此后续的工艺不会损坏第一颜色子像素结构。本实施例中，第二电极25的材料选择为ITO、AZO或FTO，其还可以起到保护膜的作用，因此不需要再另外制备无机薄膜保护层。
S6、如图5f所示，在所述第二颜色子像素区域中制备形成第二颜色子像素结构。本实施例中，该步骤中的量子点材料采用可发出绿色单色光的量子点材料，制备获得绿色子像素2G。其具体的工艺过程参照步骤S4进行。
S7、如图5g所示，应用第三次黄光刻蚀工艺，在所述像素定义层26中刻蚀出第三颜色子像素区域。其中本实施例中，所述第三颜色子像素区域设置为蓝色子像素。
S8、如图5h所示，在所述第三颜色子像素区域中制备形成第三颜色子像素结构。本实施例中，该步骤中的量子点材料采用可发出蓝色单色光的量子点材料，制备获得蓝色子像素2B。其具体的工艺过程参照步骤S4进行。
S9、如图5i所示，在像素结构2上制备封装结构层3。
如上实施例提供的制备方法中，依次进行不同颜色的像素结构的制备，即，首先完成红色子像素的制备，然后再完成绿色子像素的的制备，最后才进行蓝色子像素制备。当然，红绿蓝三种颜色的顺序是可以互换的。
如上实施例提供的量子点发光二极管显示面板，像素结构中采用量子点发光层，利用量子点材料电致发光的功能，提高了像素结构发光的色纯度和发光 效率。进一步地，其制备工艺中，量子点发光层可以采用涂布工艺制备获得，相比于现有技术中采用FMM蒸镀工艺制备发光层，其不仅减少了发光材料的浪费，节省成本；并且采用涂布工艺，整体上降低了显示面板工艺的难度，在制备高分辨率的显示面板时，可以有效地防止相邻像素出现混色的问题，有利于获得更高分别率的显示面板。
本实施例还提供了一种显示装置，如图6所示，所述显示装置包括驱动单元200和显示面板100，所述驱动单元200向所述显示面板100提供驱动信号以使所述显示面板100显示画面。其中，所述显示面板100采用了本发明如上实施例所提供的QLED显示面板。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (20)

  1. 一种量子点发光二极管显示面板，包括TFT阵列基板以及阵列设置在该TFT阵列基板上的多个像素结构，其中，所述像素结构包括按照远离所述TFT阵列基板的方向依次叠层设置的第一电极、空穴传输功能层、量子点发光层、电子传输功能层和第二电极；所述量子点发光层包括有机溶剂材料和分散在所述有机溶剂材料中的量子点材料，所述量子点材料在电致激发的条件下发光。
  2. 根据权利要求1所述的量子点发光二极管显示面板，其中，所述像素结构被设置为红色子像素、绿色子像素或蓝色子像素，所述红色子像素的量子点发光层中设置有发出红色单色光的量子点材料，所述绿色子像素的量子点发光层中设置有发出绿色单色光的量子点材料，所述蓝色子像素的量子点发光层中设置有发出蓝色单色光的量子点材料。
  3. 根据权利要求2所述的量子点发光二极管显示面板，其中，所述像素结构还被设置为白色子像素，所述白子像素的量子点发光层中设置有发出红色单色光、绿色单色光以及蓝色单色光的量子点材料。
  4. 根据权利要求1所述的量子点发光二极管显示面板，其中，所述量子点材料选自CdS、CdSe、CdTe、ZnS和ZnSe中的一种或多种。
  5. 根据权利要求1所述的量子点发光二极管显示面板，其中，所述第二电极的材料为ITO、AZO或FTO。
  6. 根据权利要求1所述的量子点发光二极管显示面板，其中，多个像素结构的所有第二电极相互连接形成一体。
  7. 根据权利要求1所述的量子点发光二极管显示面板，其中，所述第二电极上还设置有无机薄膜保护层。
  8. 一种量子点发光二极管显示面板的制备方法，其中，包括：
    提供TFT阵列基板并在TFT阵列基板上制备阵列分布的多个第一电极；
    在所述TFT阵列基板上制备像素定义层；
    应用黄光刻蚀工艺，在所述像素定义层中刻蚀出子像素区域；
    在所述子像素区域制备形成像素结构；
    其中，所述像素结构包括按照远离所述TFT阵列基板的方向依次叠层设置的第一电极、空穴传输功能层、量子点发光层、电子传输功能层和第二电极；所述量子点发光层包括有机溶剂材料和分散在所述有机溶剂材料中的量子点材料，所述量子点材料在电致激发的条件下发光；
    其中，所述像素结构中的量子点发光层通过涂布工艺制备获得。
  9. 根据权利要求8所述的量子点发光二极管显示面板的制备方法，其中，所述子像素区域制备形成像素结构的步骤具体包括：
    在所述子像素区域中位于第一电极上蒸镀沉积形成空穴传输功能层；
    应用涂布工艺在所述空穴传输功能层上涂布形成量子点发光层；
    在所述量子点发光层上依次蒸镀沉积形成电子传输功能层和第二电极。
  10. 根据权利要求9所述的量子点发光二极管显示面板的制备方法，其中，该方法具体包括步骤：
    S1、提供TFT阵列基板并在TFT阵列基板上制备阵列分布的多个第一电极；
    S2、在所述TFT阵列基板上制备像素定义层；
    S3、应用第一次黄光刻蚀工艺，在所述像素定义层中刻蚀出第一颜色子像素区域；
    S4、在所述第一颜色子像素区域中制备形成第一颜色子像素结构；
    S5、应用第二次黄光刻蚀工艺，在所述像素定义层中刻蚀出第二颜色子像素区域；
    S6、在所述第二颜色子像素区域中制备形成第二颜色子像素结构；
    S7、应用第三次黄光刻蚀工艺，在所述像素定义层中刻蚀出第三颜色子像素区域；
    S8、在所述第三颜色子像素区域中制备形成第三颜色子像素结构。
  11. 根据权利要求9所述的量子点发光二极管显示面板的制备方法，其中，所述量子点材料选自CdS、CdSe、CdTe、ZnS和ZnSe中的一种或多种。
  12. 根据权利要求9所述的量子点发光二极管显示面板的制备方法，其中，所述第二电极的材料为ITO、AZO或FTO。
  13. 根据权利要求9所述的量子点发光二极管显示面板的制备方法，其中，多个像素结构的所有第二电极相互连接形成一体。
  14. 一种显示装置，包括驱动单元和显示面板，所述驱动单元向所述显示面板提供驱动信号以使所述显示面板显示画面；其中，所述显示面板为量子点发光二极管显示面板，所述量子点发光二极管显示面板包括TFT阵列基板以及阵列设置在该TFT阵列基板上的多个像素结构，其中，所述像素结构包括按照远离所述TFT阵列基板的方向依次叠层设置的第一电极、空穴传输功能层、量子点发光层、电子传输功能层和第二电极；所述量子点发光层包括有机溶剂材料和分散在所述有机溶剂材料中的量子点材料，所述量子点材料在电致激发的条件下发光。
  15. 根据权利要求14所述的显示装置，其中，所述像素结构被设置为红色子像素、绿色子像素或蓝色子像素，所述红色子像素的量子点发光层中设置有发出红色单色光的量子点材料，所述绿色子像素的量子点发光层中设置有发出绿色单色光的量子点材料，所述蓝色子像素的量子点发光层中设置有发出蓝色单色光的量子点材料。
  16. 根据权利要求15所述的显示装置，其中，所述像素结构还被设置为白色子像素，所述白子像素的量子点发光层中设置有发出红色单色光、绿色单色光以及蓝色单色光的量子点材料。
  17. 根据权利要求14所述的显示装置，其中，所述量子点材料选自CdS、CdSe、CdTe、ZnS和ZnSe中的一种或多种。
  18. 根据权利要求14所述的显示装置，其中，所述第二电极的材料为ITO、AZO或FTO。
  19. 根据权利要求14所述的显示装置，其中，多个像素结构的所有第二电极相互连接形成一体。
  20. 根据权利要求14所述的显示装置，其中，所述第二电极上还设置有无机薄膜保护层。
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