WO2018176525A1 - 量子点led封装结构 - Google Patents

量子点led封装结构 Download PDF

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WO2018176525A1
WO2018176525A1 PCT/CN2017/081034 CN2017081034W WO2018176525A1 WO 2018176525 A1 WO2018176525 A1 WO 2018176525A1 CN 2017081034 W CN2017081034 W CN 2017081034W WO 2018176525 A1 WO2018176525 A1 WO 2018176525A1
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quantum dot
layer
bracket
emitting chip
package structure
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PCT/CN2017/081034
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English (en)
French (fr)
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樊勇
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深圳市华星光电技术有限公司
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Priority to PL17903598.5T priority Critical patent/PL3605621T3/pl
Priority to KR1020197031577A priority patent/KR20190127932A/ko
Priority to EP17903598.5A priority patent/EP3605621B1/en
Priority to JP2019553554A priority patent/JP6852250B2/ja
Priority to US15/529,507 priority patent/US10134962B2/en
Publication of WO2018176525A1 publication Critical patent/WO2018176525A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a quantum dot LED package structure.
  • TFT-LCD Thin Film Transistor-LCD
  • CF color filter
  • TFT thin film transistor
  • LC liquid crystal
  • Sealant Sealant
  • a liquid light emitting diode is generally used as a backlight in a liquid crystal display device.
  • the most common white LEDs are LEDs with a yellow chip and a yellow phosphor. When the LEDs with yellow phosphors are used as backlights and the LCD panel, the color saturation of the display is usually compared.
  • NTSC color gamut value is generally 72%)
  • the displayed color is not bright enough, in order to improve color saturation and achieve more vivid color performance, currently mainly by changing the yellow phosphor to red green (RG) phosphor
  • the white LED adopts a blue light-emitting chip and a red-green phosphor, but this method can only increase the color gamut value of about 25% (the NTSC color gamut value is generally 90%) relative to the method of adding the yellow phosphor.
  • the new BT.2020 color gamut standard (equivalent to NTSC color gamut value of 134%)
  • Quantum Dot QD
  • the material technology is the easiest to implement and the most energy efficient.
  • Quantum dots also known as nanocrystals, have nanoparticles with a particle size generally between 1-10 nm. Since electrons and holes are quantum confined, the continuous band structure becomes a discrete energy level structure with molecular characteristics. Fluorescence can be emitted after stimulation.
  • the emission spectrum of a quantum dot can be controlled by changing the size of the quantum dot. By changing the size of the quantum dot and its chemical composition, its emission spectrum can cover the entire visible region, with a broad excitation spectrum and a narrow emission spectrum, and thus the spectral coverage is high.
  • the quantum dot compared with the fluorescence lifetime of the organic phosphor, the quantum dot has a fluorescence lifetime of 3-5 times and has good light stability. All in all, quantum dots are an ideal fluorescent material.
  • the quantum dot hybrid material is encapsulated inside the LED holder as a fluorescent material and silicone. It is called a quantum dot light emitting diode (QLED).
  • QLED quantum dot light emitting diode
  • quantum dots are sensitive to water and oxygen. When exposed to water and oxygen, the fluorescence efficiency will irreversibly decrease rapidly. Therefore, the packaging of quantum dots needs to have good water and oxygen barrier capability. In addition, as the temperature of the quantum dot material increases, the luminous efficiency will gradually decrease, and the wavelength of the emission will also be red-shifted. Therefore, the packaging of the quantum dots needs to be able to isolate high temperatures or have a good heat dissipation environment.
  • the main packaging method is to package quantum dots in a glass tube or encapsulated in a water- and oxygen-proof polyethylene terephthalate (PET) film, but the former uses glass.
  • PET polyethylene terephthalate
  • the object of the present invention is to provide a quantum dot LED package structure, which has good heat dissipation effect and water and oxygen barrier effect, and aims to solve the current quantum dot LED, which is difficult to mass-produce, high in cost, low in light efficiency, and difficult to realize narrow frame application. problem.
  • the present invention provides a quantum dot LED package structure comprising a bottom support, an outer support, a content sub-dot light emitting chip, an inorganic barrier layer, and a top silicone layer;
  • the content sub-dot layer light emitting chip is disposed on the bottom bracket;
  • the external bracket is disposed on the bottom bracket and surrounds the content sub-dot layer light-emitting chip
  • the inorganic barrier layer covers the outer bracket and the content sub-dot layer light-emitting chip on the bottom bracket, and encapsulates the outer bracket and the content sub-dot layer light-emitting chip;
  • the top silica gel layer is disposed on the inorganic barrier layer.
  • the material of the inorganic barrier layer is SiO 2 , AlN, SiAlN, or Al 2 O 3 .
  • the inorganic barrier layer is formed by a low temperature sputtering method, a plasma enhanced chemical vapor deposition method, or a thermal evaporation method.
  • the content sub-dot layer light-emitting chip includes a blue light-emitting chip, a first isolation layer, a quantum dot layer, and a second isolation layer which are sequentially disposed on the bottom bracket from bottom to top.
  • the quantum dot layer comprises two quantum dot materials, a red quantum dot material and a green quantum dot material.
  • the quantum dot layer comprises a quantum dot material and is a green quantum dot material
  • the top silica gel layer is a silica gel layer comprising a KSF phosphorescent luminescent material.
  • the material of the first isolation layer and the second isolation layer is silica gel or glass.
  • the bottom bracket includes a first metal bracket and a second metal bracket spaced apart from each other, and an insulating bracket between the first metal bracket and the second metal bracket;
  • the first metal bracket and the second metal bracket are respectively connected to the positive pole and the negative pole of the blue light emitting chip.
  • the material of the outer bracket and the insulating bracket is an epoxy molding compound or ceramic.
  • the blue light emitting chip is a flip chip.
  • the invention also provides a quantum dot LED package structure, comprising a bottom bracket, an outer bracket, a content sub-dot layer light-emitting chip, an inorganic barrier layer, and a top silicone layer;
  • the content sub-dot layer light emitting chip is disposed on the bottom bracket;
  • the external bracket is disposed on the bottom bracket and surrounds the content sub-dot layer light-emitting chip
  • the inorganic barrier layer covers the outer bracket and the content sub-dot layer light-emitting chip on the bottom bracket, and encapsulates the outer bracket and the content sub-dot layer light-emitting chip;
  • the top silica gel layer is disposed on the inorganic barrier layer
  • the inorganic barrier layer is formed by low temperature sputtering, plasma enhanced chemical vapor deposition, or thermal evaporation;
  • the content sub-dot layer light-emitting chip comprises a blue light-emitting chip, a first isolation layer, a quantum dot layer, and a second isolation layer which are sequentially disposed on the bottom bracket from bottom to top.
  • the present invention provides a quantum dot LED package structure including a bottom support, an outer support, a content sub-dot light emitting chip, an inorganic barrier layer, and a top silicone layer, wherein the inorganic barrier layer is
  • the bottom bracket covers the outer bracket and the content sub-dot layer light-emitting chip, and the outer bracket and the content sub-dot layer light-emitting chip are packaged; and the outer bracket and the content sub-dot layer light-emitting chip are packaged by using an inorganic barrier layer
  • the top layer of the silica gel layer is disposed on the inorganic barrier layer, and the quantum dot LED can satisfy the water-oxygen barrier condition that the existing package structure cannot be satisfied by the silica gel layer, and has a good heat dissipation effect, thereby solving the current quantum dot LED difficulty. Production, high cost, low light efficiency, and difficult to achieve narrow border applications.
  • FIG. 1 is a schematic view of a quantum dot LED package structure of the present invention
  • FIG. 2 is a schematic structural view of a content sub-dot layer light-emitting chip in the quantum dot LED package structure of the present invention.
  • the present invention provides a quantum dot LED package structure, including a bottom bracket 110, an outer bracket 130, a content sub-dot layer light emitting chip 150, an inorganic barrier layer 170, and a top silicone layer 190;
  • the content sub-dot layer light-emitting chip 150 is disposed on the bottom bracket 110;
  • the outer bracket 130 is disposed on the bottom bracket 110 and surrounds the content sub-dot layer light-emitting chip 150;
  • the inorganic barrier layer 170 covers the outer bracket 130 and the content sub-dot layer light-emitting chip 150 on the bottom bracket 110, and encapsulates the outer bracket 130 and the content sub-dot layer light-emitting chip 150;
  • the top silica gel layer 190 is disposed on the inorganic barrier layer 170, so that the silica gel in the top silica gel layer 190 can fill a part of defects formed by the surface of the inorganic barrier layer 170 during deposition, thereby preventing quantum dot LED packaging. Film cracking due to abrupt changes in ambient temperature and humidity during use.
  • the quantum dot LED package structure of the present invention encapsulates the outer support 130 and the content sub-dot layer light-emitting chip 150 by using the inorganic barrier layer 170, and the top silicon dioxide layer 190 is disposed on the inorganic barrier layer 170, so that the quantum dot LED can satisfy the present
  • There is a water-oxygen barrier condition that the package structure cannot be satisfied by simply using a silica gel layer usually, the oxygen permeability of the low-permeability oxygen-permeable silica gel is 120-350 cc/m 2 .day, and the water-oxygen barrier condition required for the actual quantum dot LED is transparent.
  • the oxygen rate is ⁇ 10 -1 cc/m 2 .day), and has a good heat dissipation effect, thereby solving the problems that the quantum dot LED is difficult to mass-produce, high in cost, low in light efficiency, and difficult to realize narrow frame application.
  • the inorganic barrier layer 170 is an inorganic barrier material with low water permeability and oxygen permeability, which can not only improve the heat dissipation effect of the quantum dot LED package structure, but also greatly improve the barrier effect of the quantum dot LED package structure on water and oxygen.
  • the material of the inorganic barrier layer 170 may be silicon oxide (SiO 2 ), aluminum nitride (AlN), silicon aluminum nitride (SiAlN), or aluminum oxide (Al 2 O 3 ) or the like.
  • the inorganic barrier layer 170 is deposited by a method such as a low temperature sputtering method, a plasma enhanced chemical vapor deposition method, or a thermal evaporation method.
  • the content sub-dot layer light-emitting chip 150 includes a blue light-emitting chip 151, a first isolation layer 152, a quantum dot layer 153, and a first layer disposed on the bottom bracket 110 from bottom to top. Two isolation layers 154.
  • the quantum dot layer 153 comprises two quantum dot materials, respectively a red quantum dot material and a green quantum dot material; and the top silicon dioxide layer 190 is a transparent silica material.
  • the quantum dot layer 153 comprises two quantum dot materials, respectively a red quantum dot material and a green quantum dot material; and the top silicon dioxide layer 190 is a transparent silica material.
  • the quantum dot layer 153 only comprises a quantum dot material of a green quantum dot material; then the top silicon dioxide layer 190 is a silica gel layer containing a KSF phosphorescent luminescent material, and the quantum dot LED package structure of the system is not due to the KSF phosphorescent luminescent material. It absorbs the green light band, so the luminous efficiency is higher.
  • the material of the first isolation layer 152 and the second isolation layer 154 is silica gel or glass.
  • the bottom bracket 110 includes a first metal bracket 111 and a second metal bracket 112 spaced apart from each other, and an insulating bracket 113 between the first metal bracket 111 and the second metal bracket 112;
  • the metal holder 111 and the second metal holder 112 are respectively connected to the positive and negative electrodes of the blue light emitting chip 151.
  • the outer bracket 130 and the insulating bracket 113 are made of Epoxy Molding Compound (EMC) or ceramic.
  • the blue light emitting chip 151 is a flip chip.
  • the inorganic barrier layer 170 forms a recess above the content sub-dot layer light-emitting chip 150, and the top silicon dioxide layer 190 is formed in the recess to be corresponding to the content of the sub-dot layer light-emitting chip 150.
  • the present invention provides a quantum dot LED package structure including a bottom support, an outer support, a content sub-dot light emitting chip, an inorganic barrier layer, and a top silicone layer, wherein the inorganic barrier layer is
  • the bottom bracket covers the outer bracket and the content sub-dot layer light-emitting chip, and the outer bracket and the content sub-dot layer light-emitting chip are packaged; and the outer bracket and the content sub-dot layer light-emitting chip are packaged by using an inorganic barrier layer
  • the top layer of the silica gel layer is disposed on the inorganic barrier layer, and the quantum dot LED can satisfy the water-oxygen barrier condition that the existing package structure cannot be satisfied by the silica gel layer, and has a good heat dissipation effect, thereby solving the current quantum dot LED difficulty. Production, high cost, low light efficiency, and difficult to achieve narrow border applications.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种量子点LED封装结构，包括底部支架（110）、外部支架（130）、含量子点层发光芯片（150）、无机屏障层（170）、及顶部硅胶层（190），其中，无机屏障层在底部支架上覆盖外部支架和含量子点层发光芯片，而对外部支架和含量子点层发光芯片进行封装；通过采用无机屏障层对外部支架和含量子点层发光芯片进行封装，并在无机屏障层上设置顶部硅胶层，对量子点LED能够满足现有封装结构单纯采用硅胶层所无法满足的水氧阻隔条件，并具有良好的散热效果，进而解决了目前量子点LED难以量产、成本高、光效低、不易实现窄边框应用等问题。

Description

量子点LED封装结构 技术领域
本发明涉及显示技术领域，尤其涉及一种量子点LED封装结构。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor-LCD，TFT-LCD)近年来得到了飞速的发展和广泛的应用。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。通常液晶显示面板由彩膜(Color Filter，CF)基板、薄膜晶体管(Thin Film Transistor，TFT)基板、夹于彩膜基板与薄膜晶体管基板之间的液晶(Liquid Crystal，LC)及密封框胶(Sealant)组成；其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
目前液晶显示器件中，普遍采用白光发光二极管(Light Emitting Diode，LED)作背光源。而最普遍的白光LED为蓝光发光芯片(B chip)加黄色荧光粉(Y phosphor)的LED，而采用黄光荧光粉的LED作为背光源搭配液晶显示面板后，显示器的色彩饱和度通常都比较低(NTSC色域值一般为72％)，显示的颜色不够鲜艳，为了提高色彩饱和度，实现更鲜艳的色彩表现，目前主要通过将黄色荧光粉更改为红色绿色(RG)荧光粉，而使白光LED采用蓝色发光芯片加红色绿色荧光粉的方式，但这种方式相对于加黄色荧光粉的方式只能够提高25％左右的色域值(NTSC色域值一般为90％)，仍无法满足新的BT.2020色域标准(相当于NTSC色域值为134％)，目前可实现80％BT.2020色域标准以上的技术，只有采用具有窄发光光谱的量子点(Quantum Dot，QD)材料的技术最容易实现，且最节能。
量子点，又可称为纳米晶，粒径一般介于1-10nm之间的纳米颗粒，由于电子和空穴被量子限域，连续的能带结构变成具有分子特性的分立能级结构，受激后可以发射荧光。量子点的发射光谱可通过改变量子点的尺寸大小来控制。通过改变量子点的尺寸和其化学组成可以使其发射光谱覆盖整个可见光区，具有宽的激发谱和窄的发射谱，因而光谱覆盖率较高。而且相比较于有机荧光粉的荧光寿命，量子点的荧光寿命是其3-5倍，具有很好的光稳定性。总而言之，量子点是一种理想的荧光材料。
将量子点混合材料作为荧光发光材料与硅胶封装在LED支架内部，被 称为量子点发光二极管(QLED)。但量子点对水氧比较敏感，暴露在水氧环境下，荧光效率会存在不可逆的迅速下降，所以对量子点的封装需要具有很好的水氧隔绝能力。另外，量子点材料随温度的升高，发光效率会逐渐下降，发光波长也会红移，故对量子点的封装需要能够隔绝高温或有较好的散热环境。目前在量子点LED的背光应用中，主要采用的封装方式为将量子点封装在玻璃管中或封装在隔水隔氧的聚对苯二甲酸乙二酯(PET)薄膜中，但前者应用玻璃，存在易碎、光利用率较低、不易实现窄边框的缺点，而后者则存在容易产生背光边缘蓝色色偏和高成本的缺点。
发明内容
本发明的目的在于提供一种量子点LED封装结构，具有良好的散热效果和水氧阻隔效果，旨在解决目前的量子点LED难以量产、成本高、光效低、不易实现窄边框应用等问题。
为实现上述目的，本发明提供一种量子点LED封装结构，包括底部支架、外部支架、含量子点层发光芯片、无机屏障层、及顶部硅胶层；
所述含量子点层发光芯片设于所述底部支架上；
所述外部支架设于所述底部支架上且环绕所述含量子点层发光芯片；
所述无机屏障层在所述底部支架上覆盖所述外部支架和含量子点层发光芯片，而对所述外部支架和含量子点层发光芯片进行封装；
所述顶部硅胶层设于所述无机屏障层上。
所述无机屏障层的材料为SiO2、AlN、SiAlN、或Al2O3。
所述无机屏障层采用低温溅射法、等离子体增强化学气相沉积法、或热蒸发法沉积形成。
所述含量子点层发光芯片包括由下至上依次设于所述底部支架上的蓝光发光芯片、第一隔离层、量子点层、及第二隔离层。
所述量子点层包含两种量子点材料，分别为红色量子点材料和绿色量子点材料。
所述量子点层包含一种量子点材料，为绿色量子点材料；
所述顶部硅胶层为包含KSF磷光发光材料的硅胶层。
所述第一隔离层和第二隔离层的材料为硅胶或玻璃。
所述底部支架包括相互间隔的第一金属支架和第二金属支架、以及位于所述第一金属支架和第二金属支架之间的绝缘支架；
所述第一金属支架和第二金属支架分别与所述蓝光发光芯片的正极与负极相连接。
所述外部支架及绝缘支架的材料为环氧塑封料、或陶瓷。
所述蓝光发光芯片为倒装芯片。
本发明还提供一种量子点LED封装结构，包括底部支架、外部支架、含量子点层发光芯片、无机屏障层、及顶部硅胶层；
所述含量子点层发光芯片设于所述底部支架上；
所述外部支架设于所述底部支架上且环绕所述含量子点层发光芯片；
所述无机屏障层在所述底部支架上覆盖所述外部支架和含量子点层发光芯片，而对所述外部支架和含量子点层发光芯片进行封装；
所述顶部硅胶层设于所述无机屏障层上；
其中，所述无机屏障层采用低温溅射法、等离子体增强化学气相沉积法、或热蒸发法沉积形成；
其中，所述含量子点层发光芯片包括由下至上依次设于所述底部支架上的蓝光发光芯片、第一隔离层、量子点层、及第二隔离层。
本发明的有益效果：本发明提供一种量子点LED封装结构，包括底部支架、外部支架、含量子点层发光芯片、无机屏障层、及顶部硅胶层，其中，所述无机屏障层在所述底部支架上覆盖所述外部支架和含量子点层发光芯片，而对所述外部支架和含量子点层发光芯片进行封装；通过采用无机屏障层对外部支架和含量子点层发光芯片进行封装，并在无机屏障层上设置顶部硅胶层，对量子点LED能够满足现有封装结构单纯采用硅胶层所无法满足的水氧阻隔条件，并具有良好的散热效果，进而解决了目前量子点LED难以量产、成本高、光效低、不易实现窄边框应用等问题。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的量子点LED封装结构的示意图；
图2为本发明的量子点LED封装结构中含量子点层发光芯片的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种量子点LED封装结构，包括底部支架110、外部支架130、含量子点层发光芯片150、无机屏障层170、及顶部硅胶层190；
所述含量子点层发光芯片150设于所述底部支架110上；
所述外部支架130设于所述底部支架110上且环绕所述含量子点层发光芯片150；
所述无机屏障层170在所述底部支架110上覆盖所述外部支架130和含量子点层发光芯片150，而对所述外部支架130和含量子点层发光芯片150进行封装；
所述顶部硅胶层190设于所述无机屏障层170上，从而所述顶部硅胶层190中的硅胶可填充所述无机屏障层170在沉积过程中表面所形成部分缺陷，进而防止量子点LED封装结构在使用过程中由于环境温度湿度的急剧变化而导致的薄膜龟裂。
本发明的量子点LED封装结构，通过采用无机屏障层170对外部支架130和含量子点层发光芯片150进行封装，并在无机屏障层170上设置顶部硅胶层190，对量子点LED能够满足现有封装结构单纯采用硅胶层所无法满足的水氧阻隔条件(通常低透水透氧硅胶的透氧率为120-350cc/m2.day，而实际量子点LED所需要的水氧阻隔条件为透氧率<10-1cc/m2.day)，并具有良好的散热效果，进而解决了目前量子点LED难以量产、成本高、光效低、不易实现窄边框应用等问题。
具体地，所述无机屏障层170为低透水透氧率的无机阻隔(barrier)材料，既能够改善量子点LED封装结构的散热效果，也能够大大改善量子点LED封装结构对水氧的阻隔效果，进一步地，所述无机屏障层170的材料可为氧化硅(SiO2)、氮化铝(AlN)、氮化硅铝(SiAlN)、或氧化铝(Al2O3)等。
具体地，所述无机屏障层170采用低温溅射法、等离子体增强化学气相沉积法、或热蒸发法等方法沉积形成。
具体地，如图2所示，所述含量子点层发光芯片150包括由下至上依次设于所述底部支架110上的蓝光发光芯片151、第一隔离层152、量子点层153、及第二隔离层154。
可选地，所述量子点层153包含两种量子点材料，分别为红色量子点材料和绿色量子点材料；所述顶部硅胶层190为透明的硅胶材料。或者，
所述量子点层153仅包含绿色量子点材料这一种量子点材料；则所述顶部硅胶层190为包含KSF磷光发光材料的硅胶层，该体系的量子点LED封装结构由于KSF磷光发光材料不吸收绿光波段，故发光效率更高。
具体地，所述第一隔离层152和第二隔离层154的材料为硅胶或玻璃。
具体地，所述底部支架110包括相互间隔的第一金属支架111和第二金属支架112、以及位于所述第一金属支架111和第二金属支架112之间的绝缘支架113；所述第一金属支架111和第二金属支架112分别与所述蓝光发光芯片151的正极与负极相连接。
具体地，所述外部支架130及绝缘支架113的材料为环氧塑封料(Epoxy Molding Compound，EMC)、或陶瓷。
具体地，所述蓝光发光芯片151为倒装芯片。
具体地，所述无机屏障层170在含量子点层发光芯片150上方形成凹陷，所述顶部硅胶层190形成于该凹陷内而对应位于所述含量子点层发光芯片150上方。
综上所述，本发明提供的一种量子点LED封装结构，包括底部支架、外部支架、含量子点层发光芯片、无机屏障层、及顶部硅胶层，其中，所述无机屏障层在所述底部支架上覆盖所述外部支架和含量子点层发光芯片，而对所述外部支架和含量子点层发光芯片进行封装；通过采用无机屏障层对外部支架和含量子点层发光芯片进行封装，并在无机屏障层上设置顶部硅胶层，对量子点LED能够满足现有封装结构单纯采用硅胶层所无法满足的水氧阻隔条件，并具有良好的散热效果，进而解决了目前量子点LED难以量产、成本高、光效低、不易实现窄边框应用等问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (18)

  1. 一种量子点LED封装结构，包括底部支架、外部支架、含量子点层发光芯片、无机屏障层、及顶部硅胶层；
    所述含量子点层发光芯片设于所述底部支架上；
    所述外部支架设于所述底部支架上且环绕所述含量子点层发光芯片；
    所述无机屏障层在所述底部支架上覆盖所述外部支架和含量子点层发光芯片，而对所述外部支架和含量子点层发光芯片进行封装；
    所述顶部硅胶层设于所述无机屏障层上。
  2. 如权利要求1所述的量子点LED封装结构，其中，所述无机屏障层的材料为SiO2、AlN、SiAlN、或Al2O3。
  3. 如权利要求1所述的量子点LED封装结构，其中，所述无机屏障层采用低温溅射法、等离子体增强化学气相沉积法、或热蒸发法沉积形成。
  4. 如权利要求1所述的量子点LED封装结构，其中，所述含量子点层发光芯片包括由下至上依次设于所述底部支架上的蓝光发光芯片、第一隔离层、量子点层、及第二隔离层。
  5. 如权利要求4所述的量子点LED封装结构，其中，所述量子点层包含两种量子点材料，分别为红色量子点材料和绿色量子点材料。
  6. 如权利要求4所述的量子点LED封装结构，其中，所述量子点层包含一种量子点材料，为绿色量子点材料；
    所述顶部硅胶层为包含KSF磷光发光材料的硅胶层。
  7. 如权利要求4所述的量子点LED封装结构，其中，所述第一隔离层和第二隔离层的材料为硅胶或玻璃。
  8. 如权利要求4所述的量子点LED封装结构，其中，所述底部支架包括相互间隔的第一金属支架和第二金属支架、以及位于所述第一金属支架和第二金属支架之间的绝缘支架；
    所述第一金属支架和第二金属支架分别与所述蓝光发光芯片的正极与负极相连接。
  9. 如权利要求8所述的量子点LED封装结构，其中，所述外部支架及绝缘支架的材料为环氧塑封料、或陶瓷。
  10. 如权利要求4所述的量子点LED封装结构，其中，所述蓝光发光芯片为倒装芯片。
  11. 一种量子点LED封装结构，包括底部支架、外部支架、含量子点 层发光芯片、无机屏障层、及顶部硅胶层；
    所述含量子点层发光芯片设于所述底部支架上；
    所述外部支架设于所述底部支架上且环绕所述含量子点层发光芯片；
    所述无机屏障层在所述底部支架上覆盖所述外部支架和含量子点层发光芯片，而对所述外部支架和含量子点层发光芯片进行封装；
    所述顶部硅胶层设于所述无机屏障层上；
    其中，所述无机屏障层采用低温溅射法、等离子体增强化学气相沉积法、或热蒸发法沉积形成；
    其中，所述含量子点层发光芯片包括由下至上依次设于所述底部支架上的蓝光发光芯片、第一隔离层、量子点层、及第二隔离层。
  12. 如权利要求11所述的量子点LED封装结构，其中，所述无机屏障层的材料为SiO2、AlN、SiAlN、或Al2O3。
  13. 如权利要求11所述的量子点LED封装结构，其中，所述量子点层包含两种量子点材料，分别为红色量子点材料和绿色量子点材料。
  14. 如权利要求11所述的量子点LED封装结构，其中，所述量子点层包含一种量子点材料，为绿色量子点材料；
    所述顶部硅胶层为包含KSF磷光发光材料的硅胶层。
  15. 如权利要求11所述的量子点LED封装结构，其中，所述第一隔离层和第二隔离层的材料为硅胶或玻璃。
  16. 如权利要求11所述的量子点LED封装结构，其中，所述底部支架包括相互间隔的第一金属支架和第二金属支架、以及位于所述第一金属支架和第二金属支架之间的绝缘支架；
    所述第一金属支架和第二金属支架分别与所述蓝光发光芯片的正极与负极相连接。
  17. 如权利要求16所述的量子点LED封装结构，其中，所述外部支架及绝缘支架的材料为环氧塑封料、或陶瓷。
  18. 如权利要求11所述的量子点LED封装结构，其中，所述蓝光发光芯片为倒装芯片。
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EP3605621A1 (en) 2020-02-05
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EP3605621B1 (en) 2022-03-23
KR20190127932A (ko) 2019-11-13

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