WO2017028352A1 - 掺杂金属的量子点及led器件和背光模组 - Google Patents

掺杂金属的量子点及led器件和背光模组 Download PDF

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WO2017028352A1
WO2017028352A1 PCT/CN2015/089474 CN2015089474W WO2017028352A1 WO 2017028352 A1 WO2017028352 A1 WO 2017028352A1 CN 2015089474 W CN2015089474 W CN 2015089474W WO 2017028352 A1 WO2017028352 A1 WO 2017028352A1
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quantum dot
metal
doped
group
dielectric layer
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PCT/CN2015/089474
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French (fr)
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程艳
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深圳市华星光电技术有限公司
武汉华星光电技术有限公司
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Priority to US14/892,080 priority Critical patent/US20170192157A1/en
Publication of WO2017028352A1 publication Critical patent/WO2017028352A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
    • G02B6/0086—Positioning aspects
    • G02B6/009—Positioning aspects of the light source in the package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other

Definitions

  • the invention relates to the technical field of quantum dots and backlights, in particular to a metal doped quantum dot and an LED device and a backlight module prepared using the quantum dot.
  • the backlight module provides a light source for the liquid crystal display, and the light-emitting effect also determines the color representation on the display.
  • the light source in the backlight module on the market is mainly divided into two types, one is a cold cathode fluorescent lamp (CCFL) and a light emitting diode (LED), wherein the LED is energy-saving and environmentally friendly, and the material volume and It has more obvious advantages in terms of service life, and thus gradually replaces CCFL as a backlight source for liquid crystal displays.
  • CCFL cold cathode fluorescent lamp
  • LED light emitting diode
  • the color gamut level is only about 72% or even lower, which is very unfavorable for the color performance of liquid crystal displays.
  • quantum dot backlight technology came into being.
  • the usual method is to use the quantum dot photoluminescence technology, that is, using ordinary white LED (the light emitted by this light source is mainly blue light), by exciting red and green quantum dot phosphors, The color of the light mixes to form white light, thereby increasing the color gamut of the display to 100%.
  • the key point in this approach is the light conversion efficiency of quantum dots, which directly affects the amount of quantum dots and indirectly affects the economic cost of the display.
  • Patent CN 103487857 A discloses a quantum dot film and a backlight module, wherein a quantum dot layer in a quantum dot film comprises a matrix and quantum dots uniformly dispersed in the matrix and diffusion particles, and the particles are diffused by light to form scattering, thereby increasing Light passes through the optical path of the quantum dot layer, thereby increasing quantum dot utilization and improving light conversion efficiency.
  • Patent CN 103852817 A discloses a quantum dot film applied to a backlight module, wherein the quantum dot film comprises a quantum dot layer, and an upper water blocking layer and a lower water blocking layer are respectively disposed on upper and lower surfaces of the quantum dot layer, and the quantum dot layer includes Adhesive, silica gel particles with microporous structure on the surface, diffusion particles and quantum dots. Main pass The refraction of the light in the micropores of the silica particles increases the quantum dot utilization.
  • Patent CN 204062680 U discloses a backlight module equipped with a quantum dot package tube and a display device thereof, the backlight module comprising an LED light bar, a quantum dot package tube, a quantum dot package tube clamping device, and a light guide plate.
  • the patented technology utilizes a quantum dot package tube holding device to stably and firmly fix the quantum dot package tube to the backlight module light source, and convert all blue light into white light to improve light utilization efficiency and prevent blue light leakage.
  • Patent CN 104566015 A discloses a quantum dot backlight module comprising a light-emitting diode, a reflective sheet, a light guide plate, a plurality of dots and quantum dots, and the quantum dot material is encapsulated in the dot by spacing, thereby Achieve high color gamut light source, reduce the use of quantum dot materials, and reduce costs.
  • Patent CN204300782 U discloses a side-entry LED backlight, comprising a lower cover, a reflective film, a light guide plate, a first diffusion film, a first brightness enhancement film, a second diffusion film, a second brightness enhancement film, a middle frame, and a heat dissipation aluminum seat. And a light strip comprising a substrate, a blue LED chip and an LED lens, wherein the blue light is changed to white light by using a blue LED chip and a filter film, a quantum dot phosphor layer and a light control layer; Color effect, reducing light loss.
  • the backlight module adopts a quantum dot encapsulation tube
  • the distance between the LED blue light source and the light guide plate is increased, and the scale of the quantum dot strip is increased, which is disadvantageous for the narrow bezel design; in addition, the coupling angle of the light guide plate to the light source is insufficient. The extraction efficiency of the light guide plate is lowered.
  • the backlight module uses a quantum dot film
  • more diffusion particles are usually added to the film, and the light path of the quantum dots is increased by increasing the scattering of light.
  • the light loss is directly increased, which is not conducive to the thin design.
  • the problem of water-oxygen sensitivity of quantum dots requires that the diaphragm must have a water-oxygen barrier and a sealed edge package (edge dead zone), which is detrimental to the narrow bezel design.
  • the best packaging method for quantum dots is directly packaged in the LED, however, Due to the poor thermal stability of quantum dots, the photothermal heat decay is severe, which hinders the application of the package in LEDs. Therefore, it is necessary to improve the existing quantum dots and their backlight technology to improve the luminous efficiency and thermal stability of quantum dots. .
  • the object of the present invention is to provide a doped metal quantum dot and an LED device and a backlight module prepared by using the same, thereby solving the problem that the quantum dot in the prior art has poor thermal stability and low photoluminescence efficiency, thereby causing it not to Suitable for packaging in LED chips.
  • the invention includes four aspects.
  • the present invention provides a doped metal quantum dot comprising an intrinsic quantum dot and a doped metal, the intrinsic quantum dot being composed of a group IB element, a group IIB element, and a group IIIA Any two or more of an element, a group VA element or a group VIA element, the doping metal being one or more of a group IB element, a group VIII element or a group VIB element.
  • the intrinsic quantum dot is one or more of CdSe, ZnS, ZnSe or CuInS compounds, and the doping metal is one of Ag, Cr, Ni or Cukind or several.
  • the intrinsic quantum dot is ZnSe, and the ZnSe quantum dot is doped with metal Cu; or the intrinsic quantum dot is CdSe, and the CdSe quantum dot is doped with metal Ag; or The intrinsic quantum dot is CuInS, and the CuInS quantum dot is doped with metal Cr.
  • the content of the doping metal is 2-8%, and the content range includes any specific value thereof, for example, 3%. 4%, 5%, 6%, 7% or 8%, preferably, the content of the doping metal is 5%.
  • the present invention also provides a method for preparing the above metal doped quantum dots, the preparation method comprising the following steps:
  • the doped metal is injected into the intrinsic quantum dots under heating under reflux and stirring to form the doped metal quantum dots.
  • the heating reflow temperature is 140-180 ° C, and the temperature range includes Any specific value therein is included, such as 140 ° C, 150 ° C, 160 ° C, 170 ° C or 180 ° C.
  • the heating reflux temperature is 160 ° C.
  • the stirring time is 5 to 10 hours.
  • the time range includes any of the point values, such as 5h, 6h, 7h, 8h, 9h or 10h, preferably the agitation time is 7.5h.
  • the present invention provides an LED device including a positive electrode, a negative electrode, and a quantum dot dielectric layer disposed between the positive electrode and the negative electrode.
  • the quantum dot dielectric layer is composed of the metal doped quantum dots.
  • the quantum dot dielectric layer includes a blue quantum dot dielectric layer, a green light quantum dot dielectric layer, and a red light quantum dot dielectric layer.
  • the blue quantum dot dielectric layer, the green light quantum dot dielectric layer, and the red light quantum dot dielectric layer are sequentially disposed from the negative electrode to the positive electrode
  • the two sides of the blue light quantum dot dielectric layer respectively contact the negative electrode and the green light quantum dot dielectric layer, and the two sides of the red light quantum dot dielectric layer respectively contact the positive electrode and the green light quantum dot dielectric layer.
  • the thickness of the blue quantum dot dielectric layer is 1-5 ⁇ m, and the thickness range includes any specific numerical value or range of values, such as 1 ⁇ m, 2 ⁇ m, 2.5 ⁇ m, 3 ⁇ m, 4 ⁇ m or 5 ⁇ m, preferably, the thickness of the blue quantum dot dielectric layer is 3 ⁇ m; the thickness of the green quantum dot dielectric layer is 1-5 ⁇ m, and the thickness range includes any specific value thereof, for example, 1 ⁇ m, 2 ⁇ m, 2.5 ⁇ m, 3 ⁇ m, 4 ⁇ m or 5 ⁇ m, preferably, the thickness of the green light quantum dot dielectric layer is 2 ⁇ m; the thickness of the red light quantum dot dielectric layer is 1-5 ⁇ m, and the thickness range includes any specific value thereof, for example, 1 ⁇ m, 1.5 ⁇ m, 2 ⁇ m, 2.5 ⁇ m, 3 ⁇ m, 4 ⁇ m or 5 ⁇ m, preferably, the blue quantum dot dielectric layer
  • the red light quantum dot dielectric layer includes a ZnSe quantum dot doped with metal Cu, and the particle size of the metal Cu-doped ZnSe quantum dot is about 18-25 nm, the particle The range of diameters includes any specific value therein, such as 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm or 25 nm, preferably the particle size is 23 nm.
  • the green light quantum dot dielectric layer includes a ZnSe quantum dot doped with metal Cu, and the particle size of the ZnSe quantum dot doped with metal Cu is about 12-20 nm, the particle The range of diameters includes any specific value therein, such as 12 nm, 13 nm, 14 nm, 15 nm, 16 nm or 17 nm, preferably the particle size is 17 nm.
  • the blue quantum dot dielectric layer includes a ZnSe quantum dot doped with a metal Cu, and the metal Cu-doped ZnSe quantum dot has a particle diameter of about 8-12 nm.
  • the particle size range includes any specific value therein, such as 8 nm, 9 nm, 10 nm, 11 nm or 12 nm, and preferably, the particle diameter is 11 nm.
  • the positive electrode and/or the negative electrode are one or more of an Ag electrode, an Al electrode, or an ITO electrode.
  • the LED device is prepared by an evaporation or inkjet method, and the negative electrode and the blue quantum dot dielectric layer are sequentially stacked by the evaporation or inkjet technology method.
  • the present invention provides a backlight module, the backlight module includes a light guide plate, an LED light bar disposed at one side edge of the light guide plate, and the light guide plate is disposed on the light guide plate.
  • An upper optical film and a reflective sheet disposed under the light guide plate, wherein the LED light bar includes a plurality of the above LED devices.
  • the LED light bar further includes a light frame for fixing the LED device, the light frame is elongated, and the plurality of LED devices are along the length direction of the light frame Arranged, and the width of the light frame is greater than the width of any of the LED devices for accommodating the LED device.
  • the backlight module is a side-in type backlight module.
  • a new quantum dot material is obtained by doping a metal element in a quantum dot, and the quantum dot material has good performance of fluorescence stabilization at high temperature without being quenched, thereby overcoming the heat of the existing quantum dot.
  • quantum dot dielectric layers of different colors are respectively prepared. Since these quantum dot dielectric layers have good thermal stability, they can be packaged together to form a novel quantum dot LED by emitting red, green and blue. The blended white light enables high color gamut presentation.
  • the technology of the present invention breaks the limitation that the existing backlight module needs to separately package the quantum dot film or the package tube outside the blue or blue-green LED chip, thereby overcoming the application difficulty of the quantum dot technology in the small and medium size display screen products. . Since the technology of the present invention can directly package quantum dot dielectric layers of different colors in the LED, the LED device can be arranged in the backlight module according to a simple long strip layout, and has a simple structure, and is very suitable for the side-in type backlight module. In this way, the display device can be made thinner and narrower, so that the design space of the ultra-thin and narrow bezel products is larger.
  • FIG. 2 is a schematic structural view of an LED device of Embodiment 10.
  • FIG. 3 is a schematic structural view of a side-entry backlight module of Embodiment 12.
  • FIG. 4 is a schematic structural view of an LED light bar in Embodiment 12.
  • the metal element copper ions were microinjected into the ZnSe quantum dots at a temperature of 160 ° C, and stirred and heated for 5 h to form copper-doped ZnSe quantum dots with a doped copper ion content of about 5%.
  • Q-1 For Q-1.
  • the quantum dot is a blue quantum dot with a particle size of 11 nm.
  • the metal element copper ions were microinjected into the ZnSe quantum dots at a temperature of 140 ° C, and the mixture was stirred and heated for 10 h to form copper-doped ZnSe quantum dots with a doped copper ion content of about 3%.
  • Q-2 The metal element copper ions were microinjected into the ZnSe quantum dots at a temperature of 140 ° C, and the mixture was stirred and heated for 10 h to form copper-doped ZnSe quantum dots with a doped copper ion content of about 3%.
  • the quantum dot is a blue quantum dot with a particle size of 8 nm.
  • the metal element copper ions were microinjected into the ZnSe quantum dots at a temperature of 180 ° C, and stirred and heated for 7.5 h to form copper-doped ZnSe quantum dots with a doped copper ion content of about 8%. Named Q-3.
  • the quantum dot is a blue quantum dot with a particle size of 12 nm.
  • the metal element copper ions were microinjected into the ZnSe quantum dots at a temperature of 160 ° C, and the mixture was stirred and heated for 7.5 h to form copper-doped ZnSe quantum dots with a copper ion content of 5%. Q-4.
  • the quantum dot is a green light quantum dot with a particle size of 17 nm.
  • the metal element copper ions were microinjected into the ZnSe quantum dots at a temperature of 140 ° C, and stirred and heated for 10 h to form copper-doped ZnSe quantum dots with a copper ion content of 4%, named Q. -5.
  • the quantum dot is a green light quantum dot with a particle size of 12 nm.
  • the quantum dot is a green light quantum dot with a particle size of 20 nm.
  • the metal element copper ions were microinjected into the ZnSe quantum dots, and the mixture was stirred and heated for 10 h to form a copper ion doped ZnSe quantum dot with a content of 5% doped copper ions, named Q. -7.
  • the quantum dot is a red light quantum dot having a particle size of 23 nm.
  • the metal element copper ions were microinjected into the ZnSe quantum dots at a temperature of 150 ° C, and the mixture was stirred and heated for 9 h to form copper-doped ZnSe quantum dots with a copper ion content of 4%, named Q. -8.
  • the quantum dot is a red light quantum dot having a particle size of 18 nm.
  • the quantum dot is a red light quantum dot having a particle size of 25 nm.
  • the copper ion doped ZnSe quantum dots prepared in the first to the ninth embodiments of the present invention were subjected to temperature decay tests, and the results are shown in FIG. 1 .
  • the LED device 10 includes an ITO negative electrode 11 disposed on the left side, a metallic silver positive electrode 12 disposed on the right side, and a quantum dot disposed therebetween. Medium layer.
  • the quantum dot dielectric layers are respectively a blue quantum dot dielectric layer 13 having a thickness of 3 ⁇ m disposed from left to right, a green quantum dot dielectric layer 14 having a thickness of 2 ⁇ m, and a red quantum dot dielectric layer 15 having a thickness of 2 ⁇ m, wherein the blue light
  • the left side of the quantum dot dielectric layer 13 is in contact with the ITO negative electrode 11, the right side is in contact with the left side of the green light quantum dot dielectric layer 14, and the right side of the green light quantum dot dielectric layer 14 is In contact with the left side of the red light quantum dot dielectric layer 15, the right side of the red light quantum dot dielectric layer 15 is in contact with the metallic silver positive electrode 12.
  • the blue light quantum dot dielectric layer in this embodiment is composed of the blue light quantum dots in the first embodiment
  • the green light quantum dot dielectric layer in this embodiment is composed of the green light quantum dots in the fourth embodiment.
  • the red light quantum dot dielectric layer in the middle consists of the red light quantum dots in the seventh embodiment.
  • the LED device is fabricated by an evaporation technique. Specifically, a blue light quantum dot dielectric layer, a green light quantum dot dielectric layer, a red light quantum dot dielectric layer, and a metallic silver positive electrode are sequentially deposited on the ITO negative electrode by an evaporation method, and the LED device is formed by layer stacking.
  • the evaporation method is a conventional technique and will not be described here.
  • the thickness of the blue quantum dot dielectric layer is 2 ⁇ m
  • the thickness of the green quantum dot dielectric layer is 1 ⁇ m
  • the thickness of the red quantum dot dielectric layer is 1 ⁇ m.
  • the embodiment provides a side-lit backlight module, as shown in FIG. 3, including a light guide plate 2, an LED light bar disposed on the left edge of the light guide plate 2, and an optical film 3 disposed above the light guide plate 2.
  • the reflection sheet 4 disposed under the light guide plate.
  • the LED light bar 1 includes a plurality of LED devices 10 and a light frame 20 for fixedly disposed LED devices.
  • the lamp frame 20 is elongated, and a plurality of LED devices 10 are arranged in the lamp frame 20 along the length direction of the lamp frame 20 (ie, the left-right direction in FIG. 4), and the width of the lamp frame 20 (ie, the up-and-down direction in FIG. 2) Greater than the width of the LED device, several LED devices are arranged in a row just in the light frame.
  • the LED device is the LED device manufactured in the fourth embodiment, and the number of the LED light bar in the LED light bar can be determined according to the requirements of the backlight module, and can be as shown in FIG. LED devices can also be other quantities.

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Abstract

一种掺杂金属的量子点，通过在本征量子点中掺杂金属元素，使得量子点在高温下荧光稳定不被猝灭。同时，利用掺杂金属的量子点制备红、绿、蓝三种颜色的量子点介质层（15、14、13），并将这些量子点介质层封装在LED器件（10）中，最终通过对红、绿、蓝三种光混合得到白光。此外，利用上述LED器件（10）可以制得结构简单的LED灯条（1），适用于侧入式背光模组，有利于超薄和窄边框产品设计。

Description

掺杂金属的量子点及LED器件和背光模组 技术领域
本发明涉及量子点及背光技术领域，具体是一种掺杂金属的量子点及使用该量子点制备的LED器件和背光模组。
背景技术
作为液晶显示器的重要组成部件，背光模组为液晶显示器提供光源，同时其发光效果也决定着显示器上的色彩呈现。目前市面上的背光模组内的光源主要分为两种，一种是冷阴极灯管(cold cathodefluorescent lamp，CCFL)和发光二极管(light emitting diode，LED)，其中LED在节能环保、材料体积和使用寿命等方面具有更明显的优势，因此逐渐取代CCFL成为液晶显示器的背光光源。
但是对于普通的白光LED而言，其色域水平仅在72％左右，甚至更低，这对于液晶显示器的色彩表现非常不利。为了提高色域，量子点(quantum dot)背光源技术应运而生。采用量子点技术时，通常的做法是利用量子点的光致发光技术，即使用普通白光LED(此光源发出的光线以蓝光为主)，通过激发红色和绿色两种量子点荧光粉，将三种颜色的光混合形成白光，从而使显示器的色域提高至100％。该做法中的关键之处在于量子点的光转化效率，它直接影响着量子点的用量，间接影响显示器的经济成本。
专利CN 103487857 A公开了一种量子点薄膜及背光模组，其量子点薄膜中的量子点层包括基质和均匀分散在基质中的量子点以及扩散粒子，通过光线照射扩散粒子形成散射，以增加光线通过量子点层的光程，借此提高量子点利用率，提高光转化效率。
专利CN 103852817 A公开了一种应用于背光模组的量子点膜，该量子点膜包括量子点层，在量子点层上下表面分别设置有上阻水层和下阻水层，量子点层包括胶黏剂、表面具有微孔结构的硅胶微粒、扩散粒子和量子点。主要通 过光线在硅胶微粒的微孔中的折射提高量子点利用率。
专利CN 204062680 U公开了一种装有量子点封装管的背光模组及其显示装置，该背光模组包括LED灯条、量子点封装管、量子点封装管夹持装置、导光板。该专利技术利用量子点封装管加持装置将量子点封装管稳定且牢固的固定在背光模组光源不，将所有蓝光转化为白光，以提高光利用效率和防止漏蓝光。
专利CN 104566015 A公开了一种量子点背光模组，包括发光二级管、反射片、导光板、多个网点以及量子点，通过间隔设置网店且将量子点材料封装在网点中，从而在实现高色域光源的同时，减少量子点材料的使用量，降低成本。
专利CN204300782 U公开了一种侧入式LED背光源，包括下盖、反射膜、导光板、第一扩散膜、第一增光膜、第二扩散膜、第二增光膜、中框、散热铝座以及发光条，该发光条包括有基板、蓝色LED芯片及LED透镜，通过采用蓝色LED芯片，并配合滤光膜、量子点荧光粉层和调光层，将蓝光变为白光，提高显色效果、降低光损耗。
虽然上述专利技术中已公开多种量子点薄膜或利用量子点技术制成的背光模组，但是由于主要是利用蓝光或蓝绿光LED芯片(GaN或InAs)激发不同尺寸量子点的封装膜或管，因此仍然存在一些问题：
1、当背光模组采用量子点封装管时，会使得LED蓝光光源距离导光板的距离增加，而且量子点条的尺度加大，不利于窄边框设计；此外，导光板对光源的耦合角度不够，使得导光板的萃取效率下降。
2、当背光模组采用量子点薄膜时，为了提高光利用效率，通常会在薄膜中加入较多的扩散粒子，通过增加光的散射来增加光线通过量子点的光程。但正因为散射较多，会直接增加光损，这不利于薄型化设计。此外，量子点的水氧敏感的问题使得膜片必须有水氧隔绝层及密封的边缘封装(边缘无效区)，这不利于窄边框设计。
基于上述分析可知，量子点的最佳封装手段是直接封装于LED中，但是， 由于目前量子点的热稳定性差，光致发光热衰严重，阻碍其封装于LED中的应用，因此有必要对现有的量子点及其背光技术进行改进以提高量子点出光效率及热稳定性。
发明内容
本发明的目的在于提供一种掺杂金属的量子点及使用该量子点制备的LED器件和背光模组，从而解决现有技术中的量子点热稳定性差、光致发光效率低而导致其不适宜封装在LED芯片中的问题。
具体地，本发明包括四个方面。
【主题：量子点】第一个方面，本发明提供一种掺杂金属的量子点，包括本征量子点和掺杂金属，所述本征量子点由ⅠB族元素、ⅡB族元素、ⅢA族元素、ⅤA族元素或ⅥA族元素中的任意两种或几种组成，所述掺杂金属为ⅠB族元素、Ⅷ族元素或ⅥB族元素中的一种或几种。
【量子点-具体组成元素】进一步地，所述本征量子点为CdSe、ZnS、ZnSe或CuInS化合物中的一种或几种，所述掺杂金属为Ag、Cr、Ni或Cu中的一种或几种。例如，所述本征量子点为ZnSe，在所述ZnSe量子点中掺杂有金属Cu；或者所述本征量子点为CdSe，在所述CdSe量子点中掺杂有金属Ag；又或者，所述本征量子点为CuInS，在所述CuInS量子点中掺杂有金属Cr。
【量子点-掺杂金属含量】进一步地，在所述掺杂金属的量子点中，所述掺杂金属的含量为2-8％，该含量范围包括了其中的任何具体数值，例如3％、4％、5％、6％、7％或8％，优选地，所述掺杂金属的含量为5％。
【主题-制备方法】第二个方面，本发明还提供一种上述掺杂金属的量子点的制备方法，所述制备方法包括以下步骤：
准备本征量子点和待掺杂金属；
在加热回流、搅拌条件下，将所述掺杂金属注入到所述本征量子点中，形成所述掺杂金属的量子点。
【加热温度】进一步地，所述加热回流温度为140-180℃，该温度范围包 括了其中的任何具体数值，例如140℃、150℃、160℃、170℃或180℃，优选地，所述加热回流温度为160℃。
【搅拌时间】进一步地，所述搅拌时间为5～10h。该时间范围包括了其中的任一点值，例如5h、6h、7h、8h、9h或10h，优选地，所述搅拌时间为7.5h。
【主题：LED器件】第三个方面，本发明提供一种LED器件，所述LED器件包括正电极、负电极以及设置在所述正电极和所述负电极之间的量子点介质层，所述量子点介质层由所述掺杂金属的量子点组成。
【介质层种类】进一步地，所述量子点介质层包括蓝光量子点介质层、绿光量子点介质层和红光量子点介质层。
【各颜色层-顺序】进一步地，从所述负电极到所述正电极之间，依次设置所述蓝光量子点介质层、所述绿光量子点介质层和所述红光量子点介质层，使所述蓝光量子点介质层两侧分别接触所述负电极和所述绿光量子点介质层，所述红光量子点介质层两侧分别接触所述正电极和所述绿光量子点介质层。
【各颜色层-厚度】进一步地，所述蓝光量子点介质层的厚度为1-5μm，该厚度范围包括了其中的任何具体数值或数值范围，例如1μm、2μm、2.5μm、3μm、4μm或5μm，优选地，所述蓝光量子点介质层的厚度为3μm；所述绿光量子点介质层的厚度为1-5μm，该厚度范围包括了其中的任何具体数值，例如1μm、2μm、2.5μm、3μm、4μm或5μm，优选地，所述绿光量子点介质层的厚度为2μm；所述红光量子点介质层的厚度为1-5μm，该厚度范围包括了其中的任何具体数值，例如1μm、1.5μm、2μm、2.5μm、3μm、4μm或5μm，优选地，所述蓝光量子点介质层的厚度为2μm。
【红色介质层-具体】进一步地，所述红光量子点介质层包括掺杂有金属Cu的ZnSe量子点，所述掺杂有金属Cu的ZnSe量子点的粒径约为18-25nm，该粒径范围包括了其中的任何具体数值，例如18nm、19nm、20nm、21nm、22nm、23nm、24nm或25nm，优选地，所述粒径为23nm。
【绿色介质层-具体】进一步地，所述绿光量子点介质层包括掺杂有金属Cu的ZnSe量子点，所述掺杂有金属Cu的ZnSe量子点的粒径约为12-20nm，该粒径范围包括了其中的任何具体数值，例如12nm、13nm、14nm、15nm、16nm或17nm，优选地，所述粒径为17nm。
【蓝色介质层-具体】进一步地，所述蓝光量子点介质层包括掺杂有金属Cu的ZnSe量子点，所述掺杂有金属Cu的ZnSe量子点的粒径约为8-12nm，该粒径范围包括了其中的任何具体数值，例如8nm、9nm、10nm、11nm或12nm，优选地，所述粒径为11nm。
【正电极和负电极】进一步地，所述正电极和/或所述负电极为Ag电极、Al电极或ITO电极中的一种或几种。
【LED器件-制备方法】进一步地，所述LED器件采用蒸镀或喷墨技术方法制备而成，通过所述蒸镀或喷墨技术方法依次叠加所述负电极、所述蓝光量子点介质层、所述绿光量子点介质层、所述红光量子点介质层和所述正电极，从而得到所述LED器件。
【主题-背光模组】第四个方面，本发明提供一种背光模组，所述背光模组包括导光板、设置在所述导光板一侧边缘的LED灯条、设置在所述导光板上方的光学膜片和设置在所述导光板下方的反射片，其中，所述LED灯条中包括若干上述LED器件。
【LED器件的排列】进一步地，所述LED灯条还包括用于固定设置所述LED器件的灯框，所述灯框为长条形，若干所述LED器件沿所述灯框的长度方向排列，且所述灯框的宽度大于任一所述LED器件的宽度，用于容置所述LED器件。
【侧入式】进一步地，所述背光模组为侧入式背光模组。
与现有技术相比，本发明的有益效果如下：
1、在本发明中，利用金属元素掺杂在量子点中得到新的量子点材料，这种量子点材料具有高温下荧光稳定不被猝灭的良好性能，从而克服了现有量子点的热稳定性较差、电致发光效率较低的问题。
2、在本发明中，分别制得了不同颜色的量子点介质层，由于这些量子点介质层具有良好的热稳定性，因此可以封装在一起构成新型的量子点LED，通过发出红、绿、蓝混合而成的白光，能够实现高色域的呈现。
3、本发明技术打破了现有的背光模组需要在蓝光或蓝绿光LED芯片外另行封装量子点薄膜或封装管的局限，从而克服了量子点技术在中小尺寸显示屏幕产品中的应用难点。由于本发明技术能够直接将不同颜色的量子点介质层封装在LED中，因此能够使LED器件按照简单的长条形布局设置在背光模组中，结构简单，非常适用于侧入式的背光模组，使显示器件可以做得更薄更窄，从而使超薄和窄边框产品设计的空间较大。
附图说明
图1是未掺杂金属的ZnSe量子点与本发明掺杂金属的ZnSe量子点的温度衰减测试对比图。
图2是实施例十的LED器件的结构示意图。
图3是实施例十二的侧入式背光模组的结构示意图。
图4是实施例十二中LED灯条的结构示意图。
具体实施方式
下面通过具体的实施例对本发明进行详细说明，应当理解的是，这些具体实施方式仅用来例举本发明，并非对本发明的实际保护范围构成任何形式的任何限定。
实施例一
本实施例提供一种掺杂金属的量子点，采用以下方法制备：
准备本征量子点：ZnSe量子点；
在温度为160℃的条件下，将金属元素铜离子微注入到ZnSe量子点中，持续搅拌并加热5h，形成掺杂铜离子的ZnSe量子点，掺杂铜离子的含量约为5％，命名为Q-1。
该量子点为蓝光量子点，粒径大小为11nm。
实施例二
本实施例提供一种掺杂金属的量子点，采用以下方法制备：
准备本征量子点：ZnSe量子点；
在温度为140℃的条件下，将金属元素铜离子微注入到ZnSe量子点中，持续搅拌并加热10h，形成掺杂铜离子的ZnSe量子点，掺杂铜离子的含量约为3％，命名为Q-2。
该量子点为蓝光量子点，粒径大小为8nm。
实施例三
本实施例提供一种掺杂金属的量子点，采用以下方法制备：
准备本征量子点：ZnSe量子点；
在温度为180℃的条件下，将金属元素铜离子微注入到ZnSe量子点中，持续搅拌并加热7.5h，形成掺杂铜离子的ZnSe量子点，掺杂铜离子的含量约为8％，命名为Q-3。
该量子点为蓝光量子点，粒径大小为12nm。
实施例四
本实施例提供一种掺杂金属的量子点，采用以下方法制备：
准备本征量子点：ZnSe量子点；
在温度为160℃的条件下，将金属元素铜离子微注入到ZnSe量子点中，持续搅拌并加热7.5h，形成掺杂铜离子的ZnSe量子点，掺杂铜离子的含量5％，命名为Q-4。
该量子点为绿光量子点，粒径大小为17nm。
实施例五
本实施例提供一种掺杂金属的量子点，采用以下方法制备：
准备本征量子点：ZnSe量子点；
在温度为140℃的条件下，将金属元素铜离子微注入到ZnSe量子点中，持续搅拌并加热10h，形成掺杂铜离子的ZnSe量子点，掺杂铜离子的含量4％，命名为Q-5。
该量子点为绿光量子点，粒径大小为12nm。
实施例六
本实施例提供一种掺杂金属的量子点，采用以下方法制备：
准备本征量子点：ZnSe量子点；
在温度为180℃的条件下，将金属元素铜离子微注入到ZnSe量子点中，持续搅拌并加热7.5h，形成掺杂铜离子的ZnSe量子点，掺杂铜离子的含量7％，命名为Q-6。
该量子点为绿光量子点，粒径大小为20nm。
实施例七
本实施例提供一种掺杂金属的量子点，采用以下方法制备：
准备本征量子点：ZnSe量子点；
在温度为160℃的条件下，将金属元素铜离子微注入到ZnSe量子点中，持续搅拌并加热10h，形成掺杂铜离子的ZnSe量子点，掺杂铜离子的含量5％，命名为Q-7。
该量子点为红光量子点，粒径大小为23nm。
实施例八
本实施例提供一种掺杂金属的量子点，采用以下方法制备：
准备本征量子点：ZnSe量子点；
在温度为150℃的条件下，将金属元素铜离子微注入到ZnSe量子点中，持续搅拌并加热9h，形成掺杂铜离子的ZnSe量子点，掺杂铜离子的含量4％，命名为Q-8。
该量子点为红光量子点，粒径大小为18nm。
实施例九
本实施例提供一种掺杂金属的量子点，采用以下方法制备：
准备本征量子点：ZnSe量子点；
在温度为180℃的条件下，将金属元素铜离子微注入到ZnSe量子点中，持续搅拌并加热8h，形成掺杂铜离子的ZnSe量子点，掺杂铜离子的含量7％，命名为Q-9。
该量子点为红光量子点，粒径大小为25nm。
性能测试实验
对于未掺杂金属离子的ZnSe量子点、本发明实施例一至实施例九中制备得到的掺杂铜离子的ZnSe量子点分别进行温度衰减测试，其结果如图1所示。
由图1可知，对于未掺杂金属离子的ZnSe量子点而言，其随温度升高的发光衰减非常明显，对于本发明中掺杂铜离子的ZnSe量子点而言，其随温度升高的发光衰减并不明显，表明掺杂铜离子的ZnSe量子点的热稳定性良好，即掺杂金属的量子点具有更好的热稳定性，在高温下不易被猝灭。
实施例十
本实施例提供一种LED器件，如图2所示，该LED器件10包括设置在左侧的ITO负电极11、设置在右侧的金属银正电极12以及设置在二者之间的量子点介质层。这些量子点介质层分别为从左到右依次设置的厚度为3μm的蓝光量子点介质层13、厚度为2μm的绿光量子点介质层14和厚度为2μm的红光量子点介质层15，其中，蓝光量子点介质层13的左侧与ITO负电极11接触、右侧与绿光量子点介质层14的左侧接触，绿光量子点介质层14的右侧 与红光量子点介质层15的左侧接触，红光量子点介质层15的右侧与金属银正电极12接触。
可以理解的是，本实施例中的蓝光量子点介质层由实施例一中的蓝光量子点组成，本实施例中的绿光量子点介质层由实施例四中的绿光量子点组成，本实施例中的红光量子点介质层由实施例七中的红光量子点组成。
在本实施例中，LED器件是通过蒸镀技术方法制备而成的。具体地，利用蒸镀技术方法在ITO负电极上依次蒸镀蓝光量子点介质层、绿光量子点介质层、红光量子点介质层和金属银正电极，通过层层叠加制成LED器件。其中，蒸镀技术方法为常规技术，在此不再赘述。
实施例十一
本实施例与实施例十的区别仅在于，在本实施例中，蓝光量子点介质层的厚度为2μm、绿光量子点介质层的厚度为1μm、红光量子点介质层的厚度为1μm。实施例十二
本实施例提供一种侧入式背光模组，如图3所示，包括导光板2、设置在导光板2左侧边缘的LED灯条1、设置在导光板2上方的光学膜片3和设置在导光板下方的反射片4。
其中，如图4所示，LED灯条1包括若干LED器件10和用于固定设置LED器件的灯框20。灯框20为长条形，若干LED器件10沿灯框20的长度方向(即图4中的左右方向)排列在灯框20中，且灯框20的宽度(即图2中的上下方向)大于LED器件的宽度，使得若干LED器件刚好在灯框中排成一行。可以理解的是，在本实施例中，LED器件为实施例四中制得的LED器件，其在LED灯条中的数量可以根据背光模组的需求确定，可以如图4中所示的12个LED器件，也可以是其他数量。
本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改 进等，均应包含在本发明权利要求的保护范围之内。

Claims (13)

  1. 一种掺杂金属的量子点，其中：包括本征量子点和掺杂金属，所述本征量子点由ⅠB族元素、ⅡB族元素、ⅢA族元素、ⅤA族元素或ⅥA族元素中的任意两种或几种组成，所述掺杂金属为ⅠB族元素、Ⅷ族元素或ⅥB族元素中的一种或几种。
  2. 根据权利要求1所述的掺杂金属的量子点，其中：所述本征量子点为CdSe、ZnS、ZnSe或CuInS化合物中的一种或几种，所述掺杂金属为Ag、Cr、Ni或Cu中的一种或几种。
  3. 根据权利要求1所述的掺杂金属的量子点，其中：在所述掺杂金属的量子点中，所述掺杂金属的含量为2-8％。
  4. 根据权利要求2所述的掺杂金属的量子点，其中：在所述掺杂金属的量子点中，所述掺杂金属的含量为2-8％。
  5. 一种制备如权利要求1所述的掺杂金属的量子点的方法，其中，所述制备方法包括以下步骤：
    准备本征量子点和待掺杂金属；
    在加热回流、搅拌条件下，将所述掺杂金属注入到所述本征量子点中，形成所述掺杂金属的量子点。
  6. 一种制备如权利要求2所述的掺杂金属的量子点的方法，其中，所述制备方法包括以下步骤：
    准备本征量子点和待掺杂金属；
    在加热回流、搅拌条件下，将所述掺杂金属注入到所述本征量子点中，形成所述掺杂金属的量子点。
  7. 一种制备如权利要求3所述的掺杂金属的量子点的方法，其中，所述制备方法包括以下步骤：
    准备本征量子点和待掺杂金属；
    在加热回流、搅拌条件下，将所述掺杂金属注入到所述本征量子点中，形成所述掺杂金属的量子点。
  8. 一种LED器件，所述LED器件包括正电极和负电极，其中：所述LED器件还包括设置在所述正电极和所述负电极之间的量子点介质层，所述量子点介质层包括掺杂金属的量子点，其中，所述掺杂金属的量子点包括本征量子点和掺杂金属，所述本征量子点由ⅠB族元素、ⅡB族元素、ⅢA族元素、ⅤA族元素或ⅥA族元素中的任意两种或几种组成，所述掺杂金属为ⅠB族元素、Ⅷ族元素或ⅥB族元素中的一种或几种。
  9. 根据权利要求8所述的LED器件，其中：所述量子点介质层包括蓝光量子点介质层、绿光量子点介质层和红光量子点介质层。
  10. 根据权利要求9所述的LED器件，其中：从所述负电极到所述正电极之间，依次设置所述蓝光量子点介质层、所述绿光量子点介质层和所述红光量子点介质层，使所述蓝光量子点介质层两侧分别接触所述负电极和所述绿光量子点介质层，所述红光量子点介质层两侧分别接触所述正电极和所述绿光量子点介质层。
  11. 一种背光模组，其中：所述背光模组包括导光板、设置在所述导光板一侧边缘的LED灯条、设置在所述导光板上方的光学膜片和设置在所述导光板下方的反射片，所述LED灯条中包括LED器件，所述LED器件包括正电极和负电极、设置在所述正电极和所述负电极之间的量子点介质层，所述量子点介质层包括本征量子点和掺杂金属，所述本征量子点由ⅠB族元素、ⅡB族元素、ⅢA族元素、ⅤA族元素或ⅥA族元素中的任意两种或几种组成，所述掺杂金属为ⅠB族元素、Ⅷ族元素或ⅥB族元素中的一种或几种。
  12. 根据权利要求11所述的背光模组，其中：所述LED灯条还包括用于固定设置所述LED器件的灯框，所述灯框为长条形，若干所述LED器件沿所述灯框的长度方向排列，且所述灯框的宽度大于任一所述LED器件的宽度，用于容置所述LED器件。
  13. 根据权利要求12所述的背光模组，其中：所述背光模组为侧入式背光模组。
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