WO2019085115A1 - Oled封装方法与oled封装结构 - Google Patents

Oled封装方法与oled封装结构 Download PDF

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Publication number
WO2019085115A1
WO2019085115A1 PCT/CN2017/113695 CN2017113695W WO2019085115A1 WO 2019085115 A1 WO2019085115 A1 WO 2019085115A1 CN 2017113695 W CN2017113695 W CN 2017113695W WO 2019085115 A1 WO2019085115 A1 WO 2019085115A1
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Prior art keywords
ultraviolet light
light absorbing
absorbing layer
particles
oled
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PCT/CN2017/113695
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English (en)
French (fr)
Inventor
李文杰
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深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to EP17930986.9A priority Critical patent/EP3706183A4/en
Priority to KR1020207015437A priority patent/KR102333465B1/ko
Priority to US15/741,909 priority patent/US10446790B2/en
Priority to JP2020522386A priority patent/JP6968994B2/ja
Publication of WO2019085115A1 publication Critical patent/WO2019085115A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED packaging method and an OLED package structure.
  • OLED Organic Light Emitting Diode
  • OLED technology has become an important candidate for third-generation display technology for consumer electronics such as mobile phones, computers, and television.
  • the basic display principle of OLED is that the organic material emits light by the injection and recombination of carriers under the driving of an electric field.
  • the OLED can realize full color display by RGB pixel independent illumination, white OLED combined with color filter film or blue OLED combined with light color conversion.
  • OLED display technology can make the screen lighter and thinner, and its self-illuminating characteristics can achieve higher contrast in the evening in the wild, and can be fabricated on substrates of different materials, and can be made into a flexible display.
  • the luminescent material of the OLED is an organic semiconductor, and the material properties of the luminescent layer can be controlled to generate light of different wavelengths.
  • OLED is a light-emitting planar light source, and its illumination can be light and thin. If it is an OLED fabricated on a flexible substrate, it can realize a large-area, bendable light source, and has potential applications in home decoration and the like.
  • the smart wearable market will be an important direction for the development of OLED technology.
  • the flexible AMOLED Active Matrix Organic Light Emitting Diode or Active Matrix Organic Light Emitting Diode
  • the OLED display can be equipped with a wristband or a watch, which can be perfectly matched to the wrist, and can also be used for making calls and surfing the Internet.
  • OLEDs have potential applications in car audio display, smart home, and aerospace technology.
  • OLEDs differ from conventional LCDs in that they do not require a backlight, injecting organic thin film materials through electron and hole carriers and illuminating in organic materials.
  • organic materials are very sensitive to water vapor and oxygen. Water/oxygen permeation can greatly reduce the life of the device.
  • OLED devices have very high requirements for packaging: at least 10 4 Above hour, the water vapor transmission rate is less than 10 -6 g/m 2 /day, and the oxygen permeability is less than 10 -5 cc/m 2 /day (1 atm). Therefore, packaging is an important position in the fabrication of OLED devices and is one of the key factors affecting product yield.
  • the existing OLED device packaging method is mainly a glass package, that is, after coating the glass on the package glass with ultraviolet (UV) curing frame seal, laser encapsulating glass seal, or sealant and filling desiccant (Dam & Fill) After curing, it provides a relatively closed environment for the light-emitting device, and a good water/oxygen barrier capability can be achieved in a certain period of time.
  • UV ultraviolet
  • Dam & Fill sealant and filling desiccant
  • Flexible OLED panels are an important research direction of organic light-emitting devices.
  • the exploration of flexible OLED device packaging is in full swing, and plasma encapsulation by plasma enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD) has become a research hotspot.
  • PECVD plasma enhanced chemical vapor deposition
  • ALD atomic layer deposition
  • the packaging cost of the flexible OLED device is 1 to 5 times that of the conventional cover package device.
  • the flexible OLED is a display trend in the future, the conventional flat glass package OLED device does not disappear.
  • TFT plays an important role in an active matrix drive display device (AMOLED), and is generally used as a switching device and a driving device in a display device.
  • AMOLED active matrix drive display device
  • the ultraviolet light energy is high, and the TFT generates carriers, electrons or holes under illumination.
  • the threshold voltage (V th ) decreases, and the V th drift directly causes the brightness of the pixel to change, thereby affecting Overall display quality. Therefore, the long-term stability of the TFT is important for the display device.
  • the packaging material (Filler) is required to improve the mechanical properties of the device, and the Newton ring can be eliminated (especially for the top-emitting device, the Newton ring must be eliminated).
  • Filler has two broad categories of curing methods: UV curing and Thermal curing. Among them, the UV curing process is simple, the curing time is short, usually 5 min to 15 min, and the production time can be shortened in mass production; the disadvantage is that UV light shines from the side of the cover to the device, which causes the Filler to cure. , causing TFT electrical drift, reducing the overall display quality of the picture.
  • Thermal curing currently has a heat cure temperature of about 100 ° C and a curing time of 60 min to 90 min. The oven uniformity (Oven) temperature uniformity also has a great influence on the curing degree of Filler.
  • Package mura the phenomenon of uneven brightness of the display).
  • the existing OLED package structure includes a TFT substrate 100 and a package cover 200 disposed opposite to each other, and is disposed on the TFT substrate 100 and the package cover 200.
  • the OLED device 300 disposed on the TFT substrate 100, the sealant 600 disposed between the TFT substrate 100 and the package cover 200 and enclosing the sealed space 610 between the TFT substrate 100 and the package cover 200, and filled in the seal Encapsulation material 700 within space 610.
  • the UV light causes an effect on the performance of the TFT device in the TFT substrate 100 while causing the encapsulation material 700 to be cured, thereby causing the TFT substrate.
  • the TFT device in 100 has an electrical drift, reducing the picture The overall display quality.
  • the present invention provides an OLED packaging method, including the following steps:
  • Step S1 providing a TFT substrate, forming an OLED device on the TFT substrate; forming a first passivation layer covering the OLED device on an outer surface of the OLED device;
  • Step S2 forming an ultraviolet light absorbing layer covering the first passivation layer on the outer surface of the first passivation layer, the ultraviolet light absorbing layer comprising an organic resin and dispersed in the organic resin and having ultraviolet light absorbing properties Inorganic particles, the ultraviolet light absorbing layer being transparent;
  • Step S3 providing a package cover, applying a sealant on a peripheral area of the corresponding OLED device on the package cover, and providing a package material in an area surrounded by the sealant on the package cover;
  • step S4 the package cover is combined with the TFT substrate, and the sealant is adhered to the TFT substrate and the package cover, and a sealed space is formed between the TFT substrate and the package cover.
  • the package material is filled in the seal. Within the space.
  • the ultraviolet light absorbing layer has an ultraviolet light transmittance of less than 5%, a visible light transmittance of more than 80%; the ultraviolet light absorbing layer has a thickness of 1 ⁇ m to 10 ⁇ m; and the content of the inorganic particles in the ultraviolet light absorbing layer is 0.1 vol% to 1.0 vol%; the inorganic particles have a particle diameter of 1 nm to 150 nm.
  • the organic resin includes one or more of a polyurethane, an acrylic resin, and an epoxy resin; the inorganic particles include one or more of metal oxide particles and metal oxide modified particles, and the metal oxide
  • the particles include one or more of titanium oxide particles, zinc oxide particles, and cerium oxide particles, and the metal oxide modified particles include titanium oxide modified particles, zinc oxide modified particles, and cerium oxide modified particles. One or more of them.
  • the ultraviolet light absorbing layer is prepared by dispersing inorganic particles into an organic resin precursor solution to prepare an ultraviolet light absorbing solution, and using the solution film forming method to make the ultraviolet light absorbing solution on the outer surface of the first passivation layer
  • the film is formed and cured to obtain an ultraviolet light absorbing layer;
  • the solution film forming method includes one or more of spin coating, dripping, inkjet printing, cast film formation, and nozzle printing.
  • the step S2 further includes forming a second passivation layer covering the ultraviolet light absorbing layer on the outer surface of the ultraviolet light absorbing layer.
  • the present invention also provides an OLED package structure, comprising: a TFT substrate and a package cover plate disposed opposite to each other, an OLED device disposed between the TFT substrate and the package cover plate, and located on the TFT substrate, a first passivation layer disposed on an outer surface of the OLED device and covering the OLED device, an ultraviolet light absorbing layer disposed on an outer surface of the first passivation layer and covering the first passivation layer, a sealant between the TFT substrate and the package cover and enclosing a sealed space between the TFT substrate and the package cover, and an encapsulation material filled in the sealed space;
  • the sealant is disposed on the periphery of the OLED device, and the ultraviolet light absorbing layer comprises an organic resin and inorganic particles dispersed in the organic resin and having ultraviolet light absorbing properties, and the ultraviolet light absorbing layer is transparent.
  • the ultraviolet light absorbing layer has an ultraviolet light transmittance of less than 5%, a visible light transmittance of more than 80%; the ultraviolet light absorbing layer has a thickness of 1 ⁇ m to 10 ⁇ m; and the content of the inorganic particles in the ultraviolet light absorbing layer is 0.1 vol% to 1.0 vol%; the inorganic particles have a particle diameter of 1 nm to 150 nm.
  • the organic resin includes one or more of a polyurethane, an acrylic resin, and an epoxy resin; the inorganic particles include one or more of metal oxide particles and metal oxide modified particles, and the metal oxide
  • the particles include one or more of titanium oxide particles, zinc oxide particles, and cerium oxide particles, and the metal oxide modified particles include titanium oxide modified particles, zinc oxide modified particles, and cerium oxide modified particles. One or more of them.
  • the OLED package structure further includes: a second passivation layer disposed on an outer surface of the ultraviolet light absorbing layer and covering the ultraviolet light absorbing layer.
  • the materials of the first passivation layer and the second passivation layer both comprise silicon nitride, and the thickness of the first passivation layer and the second passivation layer are both 500 nm to 800 nm; the encapsulation material comprises polyurethane, acrylic One or more of a resin and an epoxy resin.
  • the invention also provides an OLED packaging method, comprising the following steps:
  • Step S1 providing a TFT substrate, forming an OLED device on the TFT substrate; forming a first passivation layer covering the OLED device on an outer surface of the OLED device;
  • Step S2 forming an ultraviolet light absorbing layer covering the first passivation layer on the outer surface of the first passivation layer, the ultraviolet light absorbing layer comprising an organic resin and dispersed in the organic resin and having ultraviolet light absorbing properties Inorganic particles, the ultraviolet light absorbing layer being transparent;
  • Step S3 providing a package cover, applying a sealant on a peripheral area of the corresponding OLED device on the package cover, and providing a package material in an area surrounded by the sealant on the package cover;
  • step S4 the package cover is combined with the TFT substrate, and the sealant is adhered to the TFT substrate and the package cover, and a sealed space is formed between the TFT substrate and the package cover.
  • the package material is filled in the seal. In space
  • the ultraviolet light absorbing layer has an ultraviolet light transmittance of less than 5%, a visible light transmittance of more than 80%; the ultraviolet light absorbing layer has a thickness of 1 ⁇ m to 10 ⁇ m; and the inorganic particles are in the ultraviolet light absorbing layer.
  • the content is from 0.1 vol% to 1.0 vol%; the inorganic particles have a particle diameter of from 1 nm to 150 nm;
  • the organic resin comprises one or more of a polyurethane, an acrylic resin, and an epoxy resin
  • the inorganic particles include one or more of metal oxide particles and metal oxide modified particles
  • the metal oxide particles include one or more of titanium oxide particles, zinc oxide particles, and cerium oxide particles
  • the metal oxide modified particles include titanium oxide modified particles, zinc oxide modified particles, and oxidative tampering One or more of the particles;
  • the ultraviolet light absorbing layer is prepared by dispersing inorganic particles into an organic resin precursor solution to prepare an ultraviolet light absorbing solution, and using the solution film forming method to make the ultraviolet light absorbing solution in the first passivation layer
  • the outer surface is formed into a film, and after curing, an ultraviolet light absorbing layer is obtained;
  • the solution film forming method includes one or more of spin coating, dripping, inkjet printing, casting film formation, and nozzle printing;
  • the step S2 further includes forming a second passivation layer covering the ultraviolet light absorbing layer on the outer surface of the ultraviolet light absorbing layer.
  • the OLED packaging method of the present invention provides an ultraviolet light absorbing layer on a surface of an OLED device.
  • the ultraviolet light absorbing layer has a low ultraviolet light transmittance, and ultraviolet light is applied to the packaging material and the sealant. During the curing process, ultraviolet light can be blocked to the TFT, and the influence of the ultraviolet light on the TFT can be reduced or eliminated.
  • the ultraviolet light absorbing layer has a high visible light transmittance, and thus does not reduce the light output intensity of the OLED device.
  • the OLED package structure of the present invention is obtained by the above method, and the TFT has excellent electrical properties, and the OLED device has strong light-emitting intensity.
  • FIG. 1 is a schematic view of a conventional OLED package process
  • step S1 of the OLED packaging method of the present invention is a schematic diagram of step S1 of the OLED packaging method of the present invention.
  • FIG. 4 is a schematic structural diagram of the OLED device of FIG. 3;
  • FIG. 5 is a schematic diagram of a first embodiment of step S2 of the OLED packaging method of the present invention.
  • FIG. 6 is a schematic diagram of a second embodiment of step S2 of the OLED packaging method of the present invention.
  • step S3 of the OLED packaging method of the present invention is a schematic diagram of step S3 of the OLED packaging method of the present invention.
  • FIG. 8 is a schematic diagram of a first embodiment of step S4 of the OLED packaging method of the present invention.
  • step S4 of the OLED packaging method of the present invention is a schematic diagram of a second embodiment of step S4 of the OLED packaging method of the present invention.
  • FIG. 10 is a cross-sectional view showing a first embodiment of an OLED package structure of the present invention.
  • FIG. 11 is a cross-sectional view showing a first embodiment of an OLED package structure of the present invention.
  • the present invention provides an OLED packaging method, including the following steps:
  • Step S1 as shown in FIG. 3, a TFT substrate 10 is provided, an OLED device 30 is formed on the TFT substrate 10, and a first passivation layer 41 covering the OLED device 30 is formed on an outer surface of the OLED device 30.
  • the OLED device 30 includes an anode 31, a hole injection layer 32, a hole transport layer 33, a light-emitting layer 34, and an electron transport disposed in this order from the bottom to the top on the TFT substrate 10.
  • the anode 31, the hole injection layer 32, the hole transport layer 33, the light-emitting layer 34, the electron transport layer 35, the electron injection layer 36, and the cathode 37 are all prepared by an evaporation method.
  • the material of the first passivation layer 41 includes silicon nitride, the first passivation layer 41 has a thickness of 500 nm to 800 nm, and the first passivation layer 41 is formed by plasma enhanced chemical vapor deposition ( Prepared by PECVD).
  • the process conditions for preparing the first passivation layer 41 by plasma enhanced chemical vapor deposition are: the reaction gas is a monosilane (SiH 4 ) having a purity greater than 99.99% and an ammonia gas having a purity greater than 99.99% (NH 3 ).
  • the auxiliary ionized gas is argon (Ar) having a purity greater than 99.99%
  • the power of the RF power source is 10W to 500W
  • the pressure of the deposition chamber is 10 Pa to 20 Pa
  • the deposition rate is 3 nm/s to 20 nm/s.
  • an ultraviolet light absorbing layer 50 covering the first passivation layer 41 is formed on the outer surface of the first passivation layer 41, and the ultraviolet light absorbing layer 50 includes an organic resin and a dispersion.
  • the inorganic particles in the organic resin and having ultraviolet light absorbing properties, the ultraviolet light absorbing layer 50 is transparent.
  • the ultraviolet light absorbing layer 50 has an ultraviolet light transmittance of less than 5% and a visible light transmittance of more than 80%.
  • the ultraviolet light absorbing layer 50 has a thickness of 1 ⁇ m to 10 ⁇ m.
  • the content of the inorganic particles in the ultraviolet light absorbing layer 50 is from 0.1 vol% to 1.0 vol%.
  • the main material of the ultraviolet light absorbing layer 50 is an organic resin
  • the organic resin includes one of an organic resin having high visible light transmittance and transparency, such as polyurethane, acrylic resin, and epoxy resin.
  • the acrylic resin is an acrylic resin (ie, Polymethylmethacrylate).
  • the inorganic particles include one or more of inorganic particles having low ultraviolet light transmittance and high visible light transmittance, such as metal oxide particles and metal oxide modified particles, the metal oxide particles.
  • inorganic particles having low ultraviolet light transmittance and high visible light transmittance such as metal oxide particles and metal oxide modified particles, the metal oxide particles.
  • metal oxide particles and metal oxide modified particles such as metal oxide particles and metal oxide modified particles, the metal oxide particles.
  • Including one or more of titanium oxide (TiO 2 ) particles, zinc oxide (ZnO) particles, and cerium oxide (CeO 2 ) particles the metal oxide modified particles including titanium oxide modified particles, zinc oxide modified One or more of the particles, and the cerium oxide-modified particles.
  • the metal oxide modified particles refer to particles of a metal oxide modified material obtained by doping other chemical substances in the metal oxide material, and the metal oxide modified material is doped by doping other chemical elements.
  • the ultraviolet light absorption performance is improved, which is greater than the ultraviolet light absorption performance of the original metal oxide material.
  • the zinc oxide modified particles are aluminum doped zinc oxide (Al-ZnO) particles.
  • the inorganic particles have a particle diameter of 1 nm to 150 nm.
  • the inorganic particles have a particle diameter of 20 nm to 50 nm.
  • the ultraviolet light absorbing layer 50 is prepared by dispersing inorganic particles into an organic resin precursor solution to prepare an ultraviolet light absorbing solution, and using the solution film forming method to make the ultraviolet light absorbing solution in the first blunt
  • the outer surface of the layer 41 is formed into a film, and after curing, an ultraviolet light absorbing layer 50 is obtained.
  • the solution film forming method includes one or more of spin coating, dropping (ODF), inkjet printing (IJP), casting film formation, and nozzle printing (Nozzle printing).
  • the inorganic particles are zinc oxide (ZnO) particles
  • the zinc oxide particles have a particle diameter of 20 nm to 50 nm
  • the ultraviolet light absorbs zinc oxide particles in the solution.
  • the content of the organic resin precursor solution is a methyl methacrylate monomer solution
  • the ultraviolet light absorbing solution further contains an initiator uniformly dispersed therein
  • the solution film forming method for inkjet printing (IJP) the thickness of the uncured film formed on the outer surface of the first passivation layer 41 of the ultraviolet light absorbing solution is from 1.0 ⁇ m to 5.0 ⁇ m.
  • the step S2 may further include forming a second passivation layer 42 covering the ultraviolet light absorbing layer 50 on the outer surface of the ultraviolet light absorbing layer 50.
  • the material of the second passivation layer 42 includes silicon nitride
  • the thickness of the second passivation layer 42 is 500 nm to 800 nm
  • the second passivation layer 42 is plasma enhanced chemical vapor deposition ( Prepared by PECVD).
  • the process conditions for preparing the second passivation layer 42 by plasma enhanced chemical vapor deposition are: the reaction gas is a monosilane (SiH 4 ) having a purity greater than 99.99% and an ammonia gas having a purity greater than 99.99% (NH 3 ).
  • the auxiliary ionized gas is argon (Ar) having a purity greater than 99.99%
  • the power of the RF power source is 10W to 500W
  • the pressure of the deposition chamber is 10 Pa to 20 Pa
  • the deposition rate is 3 nm/s to 20 nm/s.
  • Step S3 as shown in FIG. 7, a package cover 20 is provided, corresponding to the package cover 20
  • the peripheral region of the OLED device 30 is coated with a sealant 60, and an encapsulating material 70 is disposed in a region surrounded by the sealant 60 on the package cover 20.
  • the encapsulating material 70 is an uncured liquid material (corresponding to a UV curing Dam & Fill packaging process) or a cured film (corresponding to a UV curing Face sealant & Film packaging process).
  • the encapsulating material 70 is an uncured liquid material
  • the encapsulating material 70 is coated or printed on the package cover 20; when the encapsulating material 70 is a cured film, the package is packaged. A material 70 is attached to the package cover 20.
  • the encapsulating material 70 includes one or more of an organic resin having high visible light transmittance and transparency, such as polyurethane, acrylic resin, and epoxy resin.
  • an organic resin having high visible light transmittance and transparency such as polyurethane, acrylic resin, and epoxy resin.
  • the acrylic resin is an acrylic resin (ie, polymethyl methacrylate).
  • the encapsulating material 70 is the same material as the organic resin in the ultraviolet light absorbing layer 50.
  • the encapsulation material 70 can improve the mechanical properties of the subsequently prepared OLED package structure, and can eliminate the Newton ring and improve the display effect.
  • Step S4 as shown in FIG. 8 and FIG. 9, the package cover 20 and the TFT substrate 10 are aligned, and the sealant 60 is adhered to the TFT substrate 10 and the package cover 20, respectively, and the TFT substrate 10 and the package cover 20 are attached. Enclosed in a sealed space 61, the encapsulating material 70 is filled in the sealed space 61.
  • the step S4 further includes a step of UV curing the sealant 60.
  • the step S4 further includes a step of simultaneously performing UV curing on the encapsulating material 70 and the sealant 60 .
  • the encapsulating material 70 and the sealant 60 are simultaneously UV-cured in such a manner that the encapsulating material 70 and the sealant 60 are irradiated with ultraviolet light from the side of the package cover 20 to be cured.
  • the ultraviolet light has a wavelength of 365 nm, and the ultraviolet light has an irradiation intensity of 5000 Mj/cm 2 to 9000 Mj/cm 2 .
  • the OLED packaging method of the present invention provides an ultraviolet light absorbing layer 50 on the surface of the OLED device 30.
  • the ultraviolet light absorbing layer 50 has a low ultraviolet light transmittance, so that the package material 70 and the sealant 60 are subjected to ultraviolet light. During the curing process, the ultraviolet light is blocked to the TFT, and the influence of the ultraviolet light on the TFT is reduced or eliminated.
  • the ultraviolet light absorbing layer 50 has a high visible light transmittance, and thus does not lower the light output intensity of the OLED device 30.
  • the present invention provides an OLED package structure, including: a TFT substrate 10 and a package cover 20 disposed opposite to each other, and a TFT substrate 10 and a package cover.
  • the sealant 60 is disposed on the periphery of the OLED device 30, and the ultraviolet light absorbing layer 50 includes an organic resin and inorganic particles dispersed in the organic resin and having ultraviolet light absorbing properties, and the ultraviolet light absorbing layer 50 Transparent.
  • the OLED device 30 includes an anode 31, a hole injection layer 32, a hole transport layer 33, a light-emitting layer 34, and an electron transport disposed in this order from the bottom to the top on the TFT substrate 10.
  • the material of the first passivation layer 41 includes silicon nitride, and the first passivation layer 41 has a thickness of 500 nm to 800 nm.
  • the ultraviolet light absorbing layer 50 has an ultraviolet light transmittance of less than 5% and a visible light transmittance of more than 80%.
  • the ultraviolet light absorbing layer 50 has a thickness of 1 ⁇ m to 10 ⁇ m.
  • the content of the inorganic particles in the ultraviolet light absorbing layer 50 is from 0.1 vol% to 1.0 vol%.
  • the main material of the ultraviolet light absorbing layer 50 is an organic resin
  • the organic resin includes one of an organic resin having high visible light transmittance and transparency, such as polyurethane, acrylic resin, and epoxy resin.
  • the acrylic resin is an acrylic resin (ie, polymethyl methacrylate).
  • the inorganic particles include one or more of inorganic particles having low ultraviolet light transmittance and high visible light transmittance, such as metal oxide particles and metal oxide modified particles, the metal oxide particles.
  • inorganic particles having low ultraviolet light transmittance and high visible light transmittance such as metal oxide particles and metal oxide modified particles, the metal oxide particles.
  • metal oxide particles and metal oxide modified particles such as metal oxide particles and metal oxide modified particles, the metal oxide particles.
  • Including one or more of titanium oxide (TiO 2 ) particles, zinc oxide (ZnO) particles, and cerium oxide (CeO 2 ) particles the metal oxide modified particles including titanium oxide modified particles, zinc oxide modified One or more of the particles, and the cerium oxide-modified particles.
  • the metal oxide modified particles refer to particles of a metal oxide modified material obtained by doping other chemical substances in the metal oxide material, and the metal oxide modified material is doped by doping other chemical elements.
  • the ultraviolet light absorption performance is improved, which is greater than the ultraviolet light absorption performance of the original metal oxide material.
  • the zinc oxide modified particles are aluminum doped zinc oxide (Al-ZnO) particles.
  • the inorganic particles have a particle diameter of 1 nm to 150 nm.
  • the inorganic particles have a particle diameter of 20 nm to 50 nm.
  • the OLED package structure may further include: The outer surface of the outer light absorbing layer 50 covers the second passivation layer 42 of the ultraviolet light absorbing layer 50.
  • the material of the second passivation layer 42 includes silicon nitride, and the thickness of the second passivation layer 42 is 500 nm to 800 nm.
  • the encapsulating material 70 includes one or more of an organic resin having high visible light transmittance and transparency, such as polyurethane, acrylic resin, and epoxy resin.
  • an organic resin having high visible light transmittance and transparency such as polyurethane, acrylic resin, and epoxy resin.
  • the acrylic resin is an acrylic resin (ie, polymethyl methacrylate).
  • the encapsulating material 70 is the same material as the organic resin in the ultraviolet light absorbing layer 50.
  • the OLED package structure of the present invention provides an ultraviolet light absorbing layer 50 on the surface of the OLED device 30.
  • the ultraviolet light absorbing layer 50 has a low ultraviolet light transmittance, so that the package material 70 and the sealant 60 are subjected to ultraviolet light. During the curing process, the ultraviolet light is blocked to the TFT, and the influence of the ultraviolet light on the TFT is reduced or eliminated.
  • the ultraviolet light absorbing layer 50 has a high visible light transmittance, and thus does not lower the light output intensity of the OLED device 30.
  • the present invention provides an OLED packaging method and an OLED package structure.
  • the OLED packaging method of the present invention provides an ultraviolet light absorbing layer on the surface of the OLED device.
  • the ultraviolet light absorbing layer has a low ultraviolet light transmittance, and can block in the process of ultraviolet curing the packaging material and the sealant.
  • the ultraviolet light is directed to the TFT to reduce or eliminate the influence of the ultraviolet light on the TFT; on the other hand, the ultraviolet light absorbing layer has a high visible light transmittance, and thus does not reduce the light output intensity of the OLED device.
  • the OLED package structure of the present invention is obtained by the above method, and the TFT has excellent electrical properties, and the OLED device has strong light-emitting intensity.

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  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供一种OLED封装方法与OLED封装结构。本发明的OLED封装方法通过在OLED器件的表面设置紫外光吸收层，一方面，所述紫外光吸收层具有低紫外光透过率，在对封装材料与框胶进行紫外固化的过程中能够阻挡紫外光照向TFT，降低或者消除紫外光对TFT的影响；另一方面，所述紫外光吸收层具有高可见光透过率，因此不会降低OLED器件的出光强度。本发明的OLED封装结构采用上述方法制得，其TFT具有优异的电学性能，其OLED器件具有较强的出光强度。

Description

OLED封装方法与OLED封装结构 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED封装方法与OLED封装结构。
背景技术
有机发光器件OLED(Organic Light Emitting Diode)以其良好的自发光特性、高的对比度、快速响应以及柔性显示等优势，在显示领域、照明领域、智能穿戴等领域有广泛的应用。
随着科学技术的发展，OLED技术成为第三代显示技术的重要候选者，用于手机、电脑、电视等消费类电子。OLED的基本显示原理为：在电场的驱动下，通过载流子的注入和复合使得有机材料发光。OLED可以通过RGB像素独立发光、白光OLED结合彩色滤光膜或者蓝光OLED结合光色转换来实现全彩显示。OLED显示技术可以使屏幕更轻薄，其自发光的特性在野外的傍晚也可以实现较高的对比度，并且能够在不同材质的基板上制造，可以做成柔性显示器。
绿色环保和高效节能的生活方式已成为人们的生活趋势，因此OLED被认为是未来的新兴照明技术。OLED的发光材料为有机半导体，可以控制其发光层的材料性质以产生不同波长的光。OLED是发光柔和的平面光源，其照明可实现轻薄化，如果是在柔性衬底上制作的OLED，则可实现大面积、可弯曲的光源，在家居装饰等方面有潜在的应用。
智能穿戴市场将会是OLED技术发展的一个重要方向。柔性AMOLED(有源矩阵有机发光二极体或主动矩阵有机发光二极体)体积轻薄、可弯曲以及便于携带的性质决定了其在穿戴设备上将有更广的应用空间。OLED显示屏可配备于手环或手表上，既可以实现与手腕完美贴合，同时还可以实现打电话、上网等功能。
此外，OLED在车载音响显示方面、智能家居、航天科技等方面均具有潜在的应用。
OLED与传统的LCD的不同之处在于其无需采用背光灯，通过电子和空穴这两种载流子注入有机薄膜材料并在有机材料复合发光。但是有机材料对水汽和氧气非常敏感，水/氧渗透会大大缩减器件寿命，为达到商业化对于OLED器件使用寿命和稳定性的要求，OLED器件对于封装效果要求 非常高：使用寿命至少在104小时以上，水汽透过率小于10-6g/m2/day，氧气穿透率小于10-5cc/m2/day(1atm)。因此封装在OLED器件制作中处于重要的位置，是影响产品良率的关键因素之一。
现有的OLED器件封装方式主要为玻璃封装，即在封装玻璃上涂覆可以紫外(UV)固化的框胶、镭射封装的玻璃胶(Laser sealing)、或框胶及填充干燥剂(Dam&Fill)后经过固化后为发光器件提供一个相对密闭的环境，在一定时间内可以达到良好的水/氧阻隔能力。
柔性OLED面板是有机发光器件的重要研究方向。近两年，关于柔性OLED器件封装的探索如火如荼，采用等离子体增强化学气相沉积法(PECVD)或者原子层沉积法(ALD)的薄膜封装成为研究热点。但是，柔性OLED器件的封装成本为传统盖板封装器件成本的1～5倍，柔性OLED虽为将来的显示趋势，但是传统平板玻璃封装OLED器件并不会消失。
TFT在有源矩阵驱动显示器件(AMOLED)中发挥重要的作用，一般在显示器件中作为开关器件和驱动器件。紫外光能量高，TFT在光照下会产生载流子，电子或者空穴，当自由载流子浓度增加时，阈值电压(Vth)降低，Vth漂移会直接引起像素发光亮度变化，从而影响整体显示质量。因此TFT的长期稳定性对显示器件十分重要。
对大尺寸器件封装需要加入封装材料(Filler)来提高器件机械性能，另外可消除牛顿环(尤其对顶发光器件，必须消除牛顿环)。目前Filler按照固化方式有两大类：紫外固化(UV curing)与热固化(Thermal curing)。其中，UV curing制程简单，固化时间短，通常为5min～15min，在量产中可缩短生产时间(Tact time)；其缺点为：UV光从盖板侧照向器件，在引发Filler固化的同时，引起TFT电性漂移，降低画面整体显示质量。Thermal curing目前市场上的Filler的热固化温度在100℃左右，固化时间长达60min～90min；另外采用的烘箱(Oven)温度均一性对Filler的固化程度也有很大影响，Filler固化不均会造成封装mura(显示器亮度不均匀的现象)。
图1为现有的一种OLED封装制程的示意图，如图1所示，现有的OLED封装结构包括相对设置的TFT基板100与封装盖板200、设于TFT基板100与封装盖板200之间且位于TFT基板100上的OLED器件300、设于TFT基板100与封装盖板200之间并在TFT基板100与封装盖板200之间围成密封空间610的框胶600、以及填充于密封空间610内的封装材料700。
如图1所示，从封装盖板200一侧对封装材料700进行UV固化时，UV光在引发封装材料700固化的同时，会对TFT基板100中的TFT器件的性能造成影响，引起TFT基板100中的TFT器件出现电性漂移，降低画 面整体显示质量。
发明内容
本发明的目的在于提供一种OLED封装方法，能够在对封装材料与框胶进行紫外固化的过程中降低或者消除紫外光对TFT的影响。
本发明的目的还在于提供一种OLED封装结构，采用上述方法制得，其TFT具有优异的电学性能。
为实现上述目的，本发明提供一种OLED封装方法，包括如下步骤：
步骤S1、提供TFT基板，在所述TFT基板上制作OLED器件；在所述OLED器件外表面形成包覆所述OLED器件的第一钝化层；
步骤S2、在所述第一钝化层外表面形成包覆所述第一钝化层的紫外光吸收层，所述紫外光吸收层包括有机树脂与分散于有机树脂中且具有紫外光吸收性能的无机颗粒，所述紫外光吸收层呈透明状；
步骤S3、提供封装盖板，在所述封装盖板上对应OLED器件的外围区域涂布框胶，并在所述封装盖板上被框胶围成的区域内设置封装材料；
步骤S4、将封装盖板与TFT基板对位组合，框胶分别黏附于TFT基板与封装盖板上并在TFT基板与封装盖板之间围成密封空间，所述封装材料填充于所述密封空间内。
所述紫外光吸收层的紫外光透过率小于5％，可见光透过率超过80％；所述紫外光吸收层的厚度为1μm～10μm；所述无机颗粒在紫外光吸收层中的含量为0.1vol％～1.0vol％；所述无机颗粒的粒径为1nm～150nm。
所述有机树脂包括聚氨酯、丙烯酸树脂、及环氧树脂中的一种或多种；所述无机颗粒包括金属氧化物颗粒与金属氧化物改性颗粒中的一种或多种，所述金属氧化物颗粒包括氧化钛颗粒、氧化锌颗粒、及氧化铈颗粒中的一种或多种，所述金属氧化物改性颗粒包括氧化钛改性颗粒、氧化锌改性颗粒、及氧化铈改性颗粒中的一种或多种。
所述紫外光吸收层的制备方法为：将无机颗粒分散至有机树脂前驱体溶液中制备紫外光吸收溶液，采用溶液成膜法使所述紫外光吸收溶液在所述第一钝化层外表面成膜，固化后得到紫外光吸收层；所述溶液成膜法包括旋涂、滴注、喷墨打印、流延成膜、及喷嘴打印中的一种或多种。
所述步骤S2还包括：在所述紫外光吸收层外表面形成包覆所述紫外光吸收层的第二钝化层。
本发明还提供一种OLED封装结构，包括：相对设置的TFT基板与封装盖板、设于TFT基板与封装盖板之间且位于TFT基板上的OLED器件、 设于所述OLED器件外表面且包覆所述OLED器件的第一钝化层、设于所述第一钝化层外表面且包覆所述第一钝化层的紫外光吸收层、设于TFT基板与封装盖板之间并在TFT基板与封装盖板之间围成密封空间的框胶、以及填充于所述密封空间内的封装材料；
其中，所述框胶设于所述OLED器件的外围，所述紫外光吸收层包括有机树脂与分散于有机树脂中且具有紫外光吸收性能的无机颗粒，所述紫外光吸收层呈透明状。
所述紫外光吸收层的紫外光透过率小于5％，可见光透过率超过80％；所述紫外光吸收层的厚度为1μm～10μm；所述无机颗粒在紫外光吸收层中的含量为0.1vol％～1.0vol％；所述无机颗粒的粒径为1nm～150nm。
所述有机树脂包括聚氨酯、丙烯酸树脂、及环氧树脂中的一种或多种；所述无机颗粒包括金属氧化物颗粒与金属氧化物改性颗粒中的一种或多种，所述金属氧化物颗粒包括氧化钛颗粒、氧化锌颗粒、及氧化铈颗粒中的一种或多种，所述金属氧化物改性颗粒包括氧化钛改性颗粒、氧化锌改性颗粒、及氧化铈改性颗粒中的一种或多种。
所述OLED封装结构还包括：设于所述紫外光吸收层外表面且包覆所述紫外光吸收层的第二钝化层。
所述第一钝化层与第二钝化层的材料均包括氮化硅，所述第一钝化层与第二钝化层的厚度均为500nm～800nm；所述封装材料包括聚氨酯、丙烯酸树脂、及环氧树脂中的一种或多种。
本发明还提供一种OLED封装方法，包括如下步骤：
步骤S1、提供TFT基板，在所述TFT基板上制作OLED器件；在所述OLED器件外表面形成包覆所述OLED器件的第一钝化层；
步骤S2、在所述第一钝化层外表面形成包覆所述第一钝化层的紫外光吸收层，所述紫外光吸收层包括有机树脂与分散于有机树脂中且具有紫外光吸收性能的无机颗粒，所述紫外光吸收层呈透明状；
步骤S3、提供封装盖板，在所述封装盖板上对应OLED器件的外围区域涂布框胶，并在所述封装盖板上被框胶围成的区域内设置封装材料；
步骤S4、将封装盖板与TFT基板对位组合，框胶分别黏附于TFT基板与封装盖板上并在TFT基板与封装盖板之间围成密封空间，所述封装材料填充于所述密封空间内；
其中，所述紫外光吸收层的紫外光透过率小于5％，可见光透过率超过80％；所述紫外光吸收层的厚度为1μm～10μm；所述无机颗粒在紫外光吸收层中的含量为0.1vol％～1.0vol％；所述无机颗粒的粒径为1nm～150nm；
其中，所述有机树脂包括聚氨酯、丙烯酸树脂、及环氧树脂中的一种或多种；所述无机颗粒包括金属氧化物颗粒与金属氧化物改性颗粒中的一种或多种，所述金属氧化物颗粒包括氧化钛颗粒、氧化锌颗粒、及氧化铈颗粒中的一种或多种，所述金属氧化物改性颗粒包括氧化钛改性颗粒、氧化锌改性颗粒、及氧化铈改性颗粒中的一种或多种；
其中，所述紫外光吸收层的制备方法为：将无机颗粒分散至有机树脂前驱体溶液中制备紫外光吸收溶液，采用溶液成膜法使所述紫外光吸收溶液在所述第一钝化层外表面成膜，固化后得到紫外光吸收层；所述溶液成膜法包括旋涂、滴注、喷墨打印、流延成膜、及喷嘴打印中的一种或多种；
其中，所述步骤S2还包括：在所述紫外光吸收层外表面形成包覆所述紫外光吸收层的第二钝化层。
本发明的有益效果：本发明的OLED封装方法通过在OLED器件的表面设置紫外光吸收层，一方面，所述紫外光吸收层具有低紫外光透过率，在对封装材料与框胶进行紫外固化的过程中能够阻挡紫外光照向TFT，降低或者消除紫外光对TFT的影响；另一方面，所述紫外光吸收层具有高可见光透过率，因此不会降低OLED器件的出光强度。本发明的OLED封装结构采用上述方法制得，其TFT具有优异的电学性能，其OLED器件具有较强的出光强度。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的一种OLED封装制程的示意图；
图2为本发明的OLED封装方法的流程图；
图3为本发明的OLED封装方法的步骤S1的示意图；
图4为图3中的OLED器件的具体结构示意图；
图5为本发明的OLED封装方法的步骤S2的第一实施例的示意图；
图6为本发明的OLED封装方法的步骤S2的第二实施例的示意图；
图7为本发明的OLED封装方法的步骤S3的示意图；
图8为本发明的OLED封装方法的步骤S4的第一实施例的示意图；
图9为本发明的OLED封装方法的步骤S4的第二实施例的示意图；
图10为本发明的OLED封装结构的第一实施例的剖视示意图；
图11为本发明的OLED封装结构的第一实施例的剖视示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种OLED封装方法，包括如下步骤：
步骤S1、如图3所示，提供TFT基板10，在所述TFT基板10上制作OLED器件30；在所述OLED器件30外表面形成包覆所述OLED器件30的第一钝化层41。
具体的，如图4所示，所述OLED器件30包括在所述TFT基板10上从下到上依次设置的阳极31、空穴注入层32、空穴传输层33、发光层34、电子传输层35、电子注入层36和阴极37。
具体的，所述阳极31、空穴注入层32、空穴传输层33、发光层34、电子传输层35、电子注入层36和阴极37均采用蒸镀法制备。
具体的，所述第一钝化层41的材料包括氮化硅，所述第一钝化层41的厚度为500nm～800nm，所述第一钝化层41采用等离子体增强化学气相沉积法(PECVD)制备。
优选的，采用等离子体增强化学气相沉积法制备所述第一钝化层41的工艺条件为：反应气体为纯度大于99.99％的甲硅烷(SiH4)与纯度大于99.99％的氨气(NH3)，辅助电离气体为纯度大于99.99％的氩气(Ar)，射频电源功率为10W～500W，沉积腔的压强为10Pa～20Pa，沉积速率为3nm/s～20nm/s。
步骤S2、如图5所示，在所述第一钝化层41外表面形成包覆所述第一钝化层41的紫外光吸收层50，所述紫外光吸收层50包括有机树脂与分散于有机树脂中且具有紫外光吸收性能的无机颗粒，所述紫外光吸收层50呈透明状。
具体的，所述紫外光吸收层50的紫外光透过率小于5％，可见光透过率超过80％。
具体的，所述紫外光吸收层50的厚度为1μm～10μm。
具体的，所述无机颗粒在紫外光吸收层50中的含量为0.1vol％～1.0vol％。
具体的，所述紫外光吸收层50的主体材料为有机树脂，所述有机树脂包括聚氨酯、丙烯酸树脂、及环氧树脂等具有高可见光透过率及透明性好的有机树脂中的一种或多种。优选的，所述丙烯酸树脂为亚克力树脂(即 聚甲基丙烯酸甲酯)。
具体的，所述无机颗粒包括金属氧化物颗粒与金属氧化物改性颗粒等具有低紫外光透过率与高可见光透过率的无机颗粒中的一种或多种，所述金属氧化物颗粒包括氧化钛(TiO2)颗粒、氧化锌(ZnO)颗粒、及氧化铈(CeO2)颗粒中的一种或多种，所述金属氧化物改性颗粒包括氧化钛改性颗粒、氧化锌改性颗粒、及氧化铈改性颗粒中的一种或多种。
具体的，所述金属氧化物改性颗粒指的是在金属氧化物材料中掺杂其它化学物质后得到的金属氧化物改性材料的颗粒，通过掺杂其它化学元素使金属氧化物改性材料的紫外光吸收性能提升，大于原金属氧化物材料的紫外光吸收性能。
优选的，所述氧化锌改性颗粒为铝掺杂氧化锌(Al-ZnO)颗粒。
具体的，所述无机颗粒的粒径为1nm～150nm。优选的，所述无机颗粒的粒径为20nm～50nm。
具体的，所述紫外光吸收层50的制备方法为：将无机颗粒分散至有机树脂前驱体溶液中制备紫外光吸收溶液，采用溶液成膜法使所述紫外光吸收溶液在所述第一钝化层41外表面成膜，固化后得到紫外光吸收层50。
具体的，所述溶液成膜法包括旋涂、滴注(ODF)、喷墨打印(IJP)、流延成膜、及喷嘴打印(Nozzle printing)等方式中的一种或多种。
优选的，所述紫外光吸收层50的制备方法中，所述无机颗粒为氧化锌(ZnO)颗粒，所述氧化锌颗粒的粒径为20nm～50nm，所述紫外光吸收溶液中氧化锌颗粒的含量为0.1vol％～1.0vol％，所述有机树脂前驱体溶液为甲基丙烯酸甲酯单体溶液，所述紫外光吸收溶液还含有均匀分散于其中的引发剂，所述溶液成膜法为喷墨打印(IJP)，所述紫外光吸收溶液在所述第一钝化层41外表面形成的未固化薄膜的厚度为1.0μm～5.0μm。
具体的，如图6所示，所述步骤S2还可以包括：在所述紫外光吸收层50外表面形成包覆所述紫外光吸收层50的第二钝化层42。
具体的，所述第二钝化层42的材料包括氮化硅，所述第二钝化层42的厚度为500nm～800nm，所述第二钝化层42采用等离子体增强化学气相沉积法(PECVD)制备。
优选的，采用等离子体增强化学气相沉积法制备所述第二钝化层42的工艺条件为：反应气体为纯度大于99.99％的甲硅烷(SiH4)与纯度大于99.99％的氨气(NH3)，辅助电离气体为纯度大于99.99％的氩气(Ar)，射频电源功率为10W～500W，沉积腔的压强为10Pa～20Pa，沉积速率为3nm/s～20nm/s。
步骤S3、如图7所示，提供封装盖板20，在所述封装盖板20上对应 OLED器件30的外围区域涂布框胶60，并在所述封装盖板20上被框胶60围成的区域内设置封装材料70。
具体的，所述封装材料70为未固化的液态材料(对应UV curing Dam&Fill封装制程)或者已固化的薄膜(对应UV curing Face sealant&Film封装制程)。
所述步骤S3中，所述封装材料70为未固化的液态材料时，将封装材料70涂布或者印刷于所述封装盖板20上；所述封装材料70为已固化的薄膜时，将封装材料70贴附于所述封装盖板20上。
具体的，所述封装材料70包括聚氨酯、丙烯酸树脂及环氧树脂等具有高可见光透过率及透明性好的有机树脂中的一种或多种。优选的，所述丙烯酸树脂为亚克力树脂(即聚甲基丙烯酸甲酯)。
优选的，所述封装材料70与所述紫外光吸收层50中的有机树脂为同种材料。
具体的，所述封装材料70能够提高后续制备的OLED封装结构的机械性能，另外可消除牛顿环，提高显示效果。
步骤S4、如图8与图9所示，将封装盖板20与TFT基板10对位组合，框胶60分别黏附于TFT基板10与封装盖板20上并在TFT基板10与封装盖板20之间围成密封空间61，所述封装材料70填充于所述密封空间61内。
具体的，所述步骤S3中的封装材料70为已固化的薄膜时，所述步骤S4还包括对框胶60进行UV固化的步骤。
具体的，如图8与图9所示，所述步骤S3中的封装材料70为未固化的液态材料时，所述步骤S4还包括对封装材料70与框胶60同时进行UV固化的步骤。优选的，对封装材料70与框胶60同时进行UV固化的方式为：从封装盖板20一侧对封装材料70与框胶60进行紫外光照射，使其固化。所述紫外光的波长为365nm，所述紫外光的照射强度为5000Mj/cm2～9000Mj/cm2。
本发明的OLED封装方法通过在OLED器件30的表面设置紫外光吸收层50，一方面，所述紫外光吸收层50具有低紫外光透过率，因此在对封装材料70与框胶60进行紫外固化的过程中能够阻挡紫外光照向TFT，降低或者消除紫外光对TFT的影响；另一方面，所述紫外光吸收层50具有高可见光透过率，因此不会降低OLED器件30的出光强度。
请参阅图10与图11，同时参阅图4，基于上述OLED封装方法，本发明提供一种OLED封装结构，包括：相对设置的TFT基板10与封装盖板20、设于TFT基板10与封装盖板20之间且位于TFT基板10上的OLED 器件30、设于所述OLED器件30外表面且包覆所述OLED器件30的第一钝化层41、设于所述第一钝化层41外表面且包覆所述第一钝化层41的紫外光吸收层50、设于TFT基板10与封装盖板20之间并在TFT基板10与封装盖板20之间围成密封空间61的框胶60、以及填充于所述密封空间61内的封装材料70；
其中，所述框胶60设于所述OLED器件30的外围，所述紫外光吸收层50包括有机树脂与分散于有机树脂中且具有紫外光吸收性能的无机颗粒，所述紫外光吸收层50呈透明状。
具体的，如图4所示，所述OLED器件30包括在所述TFT基板10上从下到上依次设置的阳极31、空穴注入层32、空穴传输层33、发光层34、电子传输层35、电子注入层36和阴极37。
具体的，所述第一钝化层41的材料包括氮化硅，所述第一钝化层41的厚度为500nm～800nm。
具体的，所述紫外光吸收层50的紫外光透过率小于5％，可见光透过率超过80％。
具体的，所述紫外光吸收层50的厚度为1μm～10μm。
具体的，所述无机颗粒在紫外光吸收层50中的含量为0.1vol％～1.0vol％。
具体的，所述紫外光吸收层50的主体材料为有机树脂，所述有机树脂包括聚氨酯、丙烯酸树脂、及环氧树脂等具有高可见光透过率及透明性好的有机树脂中的一种或多种。优选的，所述丙烯酸树脂为亚克力树脂(即聚甲基丙烯酸甲酯)。
具体的，所述无机颗粒包括金属氧化物颗粒与金属氧化物改性颗粒等具有低紫外光透过率与高可见光透过率的无机颗粒中的一种或多种，所述金属氧化物颗粒包括氧化钛(TiO2)颗粒、氧化锌(ZnO)颗粒、及氧化铈(CeO2)颗粒中的一种或多种，所述金属氧化物改性颗粒包括氧化钛改性颗粒、氧化锌改性颗粒、及氧化铈改性颗粒中的一种或多种。
具体的，所述金属氧化物改性颗粒指的是在金属氧化物材料中掺杂其它化学物质后得到的金属氧化物改性材料的颗粒，通过掺杂其它化学元素使金属氧化物改性材料的紫外光吸收性能提升，大于原金属氧化物材料的紫外光吸收性能。
优选的，所述氧化锌改性颗粒为铝掺杂氧化锌(Al-ZnO)颗粒。
具体的，所述无机颗粒的粒径为1nm～150nm。优选的，所述无机颗粒的粒径为20nm～50nm。
具体的，如图11所示，所述OLED封装结构还可以包括：设于所述紫 外光吸收层50外表面且包覆所述紫外光吸收层50的第二钝化层42。
具体的，所述第二钝化层42的材料包括氮化硅，所述第二钝化层42的厚度为500nm～800nm。
具体的，所述封装材料70包括聚氨酯、丙烯酸树脂、及环氧树脂等具有高可见光透过率及透明性好的有机树脂中的一种或多种。优选的，所述丙烯酸树脂为亚克力树脂(即聚甲基丙烯酸甲酯)。
优选的，所述封装材料70与所述紫外光吸收层50中的有机树脂为同种材料。
本发明的OLED封装结构通过在OLED器件30的表面设置紫外光吸收层50，一方面，所述紫外光吸收层50具有低紫外光透过率，因此在对封装材料70与框胶60进行紫外固化的过程中能够阻挡紫外光照向TFT，降低或者消除紫外光对TFT的影响；另一方面，所述紫外光吸收层50具有高可见光透过率，因此不会降低OLED器件30的出光强度。
综上所述，本发明提供一种OLED封装方法与OLED封装结构。本发明的OLED封装方法通过在OLED器件的表面设置紫外光吸收层，一方面，所述紫外光吸收层具有低紫外光透过率，在对封装材料与框胶进行紫外固化的过程中能够阻挡紫外光照向TFT，降低或者消除紫外光对TFT的影响；另一方面，所述紫外光吸收层具有高可见光透过率，因此不会降低OLED器件的出光强度。本发明的OLED封装结构采用上述方法制得，其TFT具有优异的电学性能，其OLED器件具有较强的出光强度。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种OLED封装方法，包括如下步骤：
    步骤S1、提供TFT基板，在所述TFT基板上制作OLED器件；在所述OLED器件外表面形成包覆所述OLED器件的第一钝化层；
    步骤S2、在所述第一钝化层外表面形成包覆所述第一钝化层的紫外光吸收层，所述紫外光吸收层包括有机树脂与分散于有机树脂中且具有紫外光吸收性能的无机颗粒，所述紫外光吸收层呈透明状；
    步骤S3、提供封装盖板，在所述封装盖板上对应OLED器件的外围区域涂布框胶，并在所述封装盖板上被框胶围成的区域内设置封装材料；
    步骤S4、将封装盖板与TFT基板对位组合，框胶分别黏附于TFT基板与封装盖板上并在TFT基板与封装盖板之间围成密封空间，所述封装材料填充于所述密封空间内。
  2. 如权利要求1所述的OLED封装方法，其中，所述紫外光吸收层的紫外光透过率小于5％，可见光透过率超过80％；所述紫外光吸收层的厚度为1μm～10μm；所述无机颗粒在紫外光吸收层中的含量为0.1vol％～1.0vol％；所述无机颗粒的粒径为1nm～150nm。
  3. 如权利要求1所述的OLED封装方法，其中，所述有机树脂包括聚氨酯、丙烯酸树脂、及环氧树脂中的一种或多种；所述无机颗粒包括金属氧化物颗粒与金属氧化物改性颗粒中的一种或多种，所述金属氧化物颗粒包括氧化钛颗粒、氧化锌颗粒、及氧化铈颗粒中的一种或多种，所述金属氧化物改性颗粒包括氧化钛改性颗粒、氧化锌改性颗粒、及氧化铈改性颗粒中的一种或多种。
  4. 如权利要求1所述的OLED封装方法，其中，所述紫外光吸收层的制备方法为：将无机颗粒分散至有机树脂前驱体溶液中制备紫外光吸收溶液，采用溶液成膜法使所述紫外光吸收溶液在所述第一钝化层外表面成膜，固化后得到紫外光吸收层；所述溶液成膜法包括旋涂、滴注、喷墨打印、流延成膜、及喷嘴打印中的一种或多种。
  5. 如权利要求1所述的OLED封装方法，其中，所述步骤S2还包括：在所述紫外光吸收层外表面形成包覆所述紫外光吸收层的第二钝化层。
  6. 一种OLED封装结构，包括：相对设置的TFT基板与封装盖板、设于TFT基板与封装盖板之间且位于TFT基板上的OLED器件、设于所述OLED器件外表面且包覆所述OLED器件的第一钝化层、设于所述第一钝 化层外表面且包覆所述第一钝化层的紫外光吸收层、设于TFT基板与封装盖板之间并在TFT基板与封装盖板之间围成密封空间的框胶、以及填充于所述密封空间内的封装材料；
    其中，所述框胶设于所述OLED器件的外围，所述紫外光吸收层包括有机树脂与分散于有机树脂中且具有紫外光吸收性能的无机颗粒，所述紫外光吸收层呈透明状。
  7. 如权利要求6所述的OLED封装结构，其中，所述紫外光吸收层的紫外光透过率小于5％，可见光透过率超过80％；所述紫外光吸收层的厚度为1μm～10μm；所述无机颗粒在紫外光吸收层中的含量为0.1vol％～1.0vol％；所述无机颗粒的粒径为1nm～150nm。
  8. 如权利要求6所述的OLED封装结构，其中，所述有机树脂包括聚氨酯、丙烯酸树脂、及环氧树脂中的一种或多种；所述无机颗粒包括金属氧化物颗粒与金属氧化物改性颗粒中的一种或多种，所述金属氧化物颗粒包括氧化钛颗粒、氧化锌颗粒、及氧化铈颗粒中的一种或多种，所述金属氧化物改性颗粒包括氧化钛改性颗粒、氧化锌改性颗粒、及氧化铈改性颗粒中的一种或多种。
  9. 如权利要求6所述的OLED封装结构，其中，还包括：设于所述紫外光吸收层外表面且包覆所述紫外光吸收层的第二钝化层。
  10. 如权利要求9所述的OLED封装结构，其中，所述第一钝化层与第二钝化层的材料均包括氮化硅，所述第一钝化层与第二钝化层的厚度均为500nm～800nm；所述封装材料包括聚氨酯、丙烯酸树脂、及环氧树脂中的一种或多种。
  11. 一种OLED封装方法，包括如下步骤：
    步骤S1、提供TFT基板，在所述TFT基板上制作OLED器件；在所述OLED器件外表面形成包覆所述OLED器件的第一钝化层；
    步骤S2、在所述第一钝化层外表面形成包覆所述第一钝化层的紫外光吸收层，所述紫外光吸收层包括有机树脂与分散于有机树脂中且具有紫外光吸收性能的无机颗粒，所述紫外光吸收层呈透明状；
    步骤S3、提供封装盖板，在所述封装盖板上对应OLED器件的外围区域涂布框胶，并在所述封装盖板上被框胶围成的区域内设置封装材料；
    步骤S4、将封装盖板与TFT基板对位组合，框胶分别黏附于TFT基板与封装盖板上并在TFT基板与封装盖板之间围成密封空间，所述封装材料填充于所述密封空间内；
    其中，所述紫外光吸收层的紫外光透过率小于5％，可见光透过率超过 80％；所述紫外光吸收层的厚度为1μm～10μm；所述无机颗粒在紫外光吸收层中的含量为0.1vol％～1.0vol％；所述无机颗粒的粒径为1nm～150nm；
    其中，所述有机树脂包括聚氨酯、丙烯酸树脂、及环氧树脂中的一种或多种；所述无机颗粒包括金属氧化物颗粒与金属氧化物改性颗粒中的一种或多种，所述金属氧化物颗粒包括氧化钛颗粒、氧化锌颗粒、及氧化铈颗粒中的一种或多种，所述金属氧化物改性颗粒包括氧化钛改性颗粒、氧化锌改性颗粒、及氧化铈改性颗粒中的一种或多种；
    其中，所述紫外光吸收层的制备方法为：将无机颗粒分散至有机树脂前驱体溶液中制备紫外光吸收溶液，采用溶液成膜法使所述紫外光吸收溶液在所述第一钝化层外表面成膜，固化后得到紫外光吸收层；所述溶液成膜法包括旋涂、滴注、喷墨打印、流延成膜、及喷嘴打印中的一种或多种；
    其中，所述步骤S2还包括：在所述紫外光吸收层外表面形成包覆所述紫外光吸收层的第二钝化层。
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