WO2018158934A1 - Laser à semiconducteur et son procédé de fabrication - Google Patents

Laser à semiconducteur et son procédé de fabrication Download PDF

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Publication number
WO2018158934A1
WO2018158934A1 PCT/JP2017/008495 JP2017008495W WO2018158934A1 WO 2018158934 A1 WO2018158934 A1 WO 2018158934A1 JP 2017008495 W JP2017008495 W JP 2017008495W WO 2018158934 A1 WO2018158934 A1 WO 2018158934A1
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WO
WIPO (PCT)
Prior art keywords
electrode
light emitting
semiconductor
face
resonator
Prior art date
Application number
PCT/JP2017/008495
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English (en)
Japanese (ja)
Inventor
政諭 楠
宮下　宗治
Original Assignee
三菱電機株式会社
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Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to PCT/JP2017/008495 priority Critical patent/WO2018158934A1/fr
Priority to JP2017528243A priority patent/JPWO2018158934A1/ja
Publication of WO2018158934A1 publication Critical patent/WO2018158934A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor

Definitions

  • the present invention relates to a semiconductor laser used for a visible light source such as a projector and a manufacturing method thereof.
  • Semiconductor lasers have the advantages of small size, good color reproducibility, low power consumption, and high brightness compared to other light sources.
  • the electrode extends to the end face of the resonator in the light emission stripe region. This is for feeding the plating. Plating is necessary in order to prevent short-circuit defects due to solder creeping up during J / D assembly.
  • Patent Document 1 a structure in which no electrode is formed in the vicinity of the end face in the entire area of the semiconductor laser has been proposed (see, for example, Patent Document 1). However, since power cannot be supplied, a plated layer cannot be formed.
  • the cavity facet of the semiconductor laser is formed by cleaving.
  • the electrode In the structure in which the electrode extends to the resonator end face in the light emitting stripe region, the electrode is present on the cleavage line, so that the electrode hangs down to the light emitting point on the end face, leading to deterioration in characteristics and reliability.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a semiconductor laser capable of forming a plating layer while preventing deterioration of characteristics and deterioration of reliability, and a method of manufacturing the same. is there.
  • a semiconductor laser according to the present invention comprises a semiconductor multilayer structure having opposed resonator end faces, an electrode formed on the semiconductor multilayer structure, and a plating layer formed on the electrode,
  • the structure includes a light-emitting stripe region formed between the resonator end faces and a non-light-emitting region formed on both sides of the light-emitting stripe region, and the electrode includes the light-emitting stripe region and the non-light-emitting region.
  • the light emission stripe region is removed in the vicinity of the resonator end surface, and the non-light emission region is formed up to the resonator end surface.
  • the electrode is removed in the vicinity of the resonator end face in the light emission stripe region. Thereby, it can prevent that an electrode hangs down to the light emission point of an end surface. As a result, it is possible to prevent deterioration of characteristics and deterioration of reliability.
  • the electrode is formed up to the resonator end face in the non-light emitting region. A plating layer can be formed by feeding the plating from this location.
  • FIG. 3 is a cross-sectional view of one semiconductor laser chip according to the first embodiment of the present invention cut perpendicularly to the resonator direction.
  • 1 is a top view showing a semiconductor laser according to a first embodiment of the present invention. It is a top view which shows the semiconductor laser which concerns on Embodiment 2 of this invention. It is a top view which shows the semiconductor laser which concerns on Embodiment 3 of this invention. It is a top view which shows the semiconductor laser which concerns on Embodiment 4 of this invention.
  • a semiconductor laser and a manufacturing method thereof according to an embodiment of the present invention will be described with reference to the drawings.
  • the same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.
  • FIG. 1 is a sectional view of one semiconductor laser chip according to the first embodiment of the present invention cut perpendicularly to the resonator direction.
  • a lower clad layer 2, a lower light guide layer 3, an active layer 4, an upper light guide layer 5, an upper clad layer 6, and a contact layer 7 are sequentially formed on the semiconductor substrate 1 to form a semiconductor laminated structure 8. Yes.
  • the semiconductor substrate 1 is made of n-type GaAs and has a thickness of 50 to 150 ⁇ m.
  • the lower cladding layer 2 is made of n-type AlInP, has a thickness of 0.5 to 4.0 ⁇ m, and a carrier concentration of 0.5 to 1.5 ⁇ 10 18 cm ⁇ 3 .
  • the lower light guide layer 3 and the upper light guide layer 5 are made of undoped AlInP and have a thickness of 0.02 to 0.4 ⁇ m.
  • the active layer 4 is made of GaInP and has a thickness of 3.0 to 20 nm.
  • the upper cladding layer 6 is made of p-type AlInP, has a thickness of 0.5 to 4.0 ⁇ m, and a carrier concentration of 0.5 to 2.0 ⁇ 10 18 cm ⁇ 3 .
  • the contact layer 7 is made of p-type GaAs, has a thickness of 0.05 to 0.5 ⁇ m, and a carrier concentration of 1.0 to 4.0 ⁇ 10 19 cm ⁇ 3 .
  • An insulating film 9 such as a silicon nitride film is formed on the upper cladding layer 6.
  • the insulating film 9 is etched in the light emitting region where current is injected to form an opening.
  • the contact layer 7 other than this opening is removed by etching.
  • a p-side electrode 10 is formed on the contact layer 7 and the insulating film 9 and is joined to the contact layer 7 through the opening of the insulating film 9 with a low resistance.
  • a gold plating layer 11 is formed on the p-side electrode 10.
  • the p-side electrode 10 is formed by laminating thin films such as Ti, Pt, and Au, and has a total thickness of 0.05 to 1.0 ⁇ m.
  • the thickness of the gold plating layer 11 is 1.0 to 6.0 ⁇ m.
  • An n-side electrode 12 is formed on the lower surface of the semiconductor substrate 1.
  • a gold plating layer 13 is formed under the n-side electrode 12.
  • the n-side electrode 12 is formed by laminating thin films such as Ti, Pt, and Au, and has a total thickness of 0.05 to 1.0 ⁇ m.
  • the thickness of the gold plating layer 13 is 1.0 to 6.0 ⁇ m.
  • the p-side gold plating layer 11 is die-bonded to the submount with the top and bottom reversed. Further, a current is supplied by wire bonding to the gold plating layer 13.
  • a manufacturing method of the semiconductor laser according to the present embodiment will be described.
  • a lower cladding layer 2, a lower light guide layer 3, an active layer 4, an upper light guide layer 5, an upper cladding layer 6, and a contact layer 7 are formed in this order on a semiconductor substrate 1 by a crystal growth method such as MOCVD.
  • the contact layer 7 is selectively removed by etching so that the contact layer 7 remains only in the light emitting region.
  • the insulating film 9 is formed on the entire surface, and the insulating film 9 in the light emitting region is removed by etching.
  • the p-side electrode 10 and the gold plating layer 11 are formed.
  • the back surface of the semiconductor substrate 1 is polished to a desired thickness, and an n-side electrode 12 and a gold plating layer 13 are formed.
  • FIG. 2 is a top view showing the semiconductor laser according to the first embodiment of the present invention.
  • the semiconductor multilayer structure 8 has an opposed resonator end face 14.
  • the semiconductor multilayer structure 8 includes an array laser part 15 and a handle part 16 formed on at least one side of the array laser part 15.
  • the handle portion 16 is an area for handling that is necessary when the semiconductor laser is grasped with tweezers, and the width may be 100 ⁇ m or more.
  • the one chip 17 has a light emission stripe region 18 formed between the resonator end faces 14 and a non-light emission region 19 formed on both sides of the light emission stripe region 18.
  • the width of one chip 17 is 500 ⁇ m, and the width of the light emission stripe region 18 is 100 ⁇ m.
  • the width of the light emitting stripe region 18 corresponds to the width of the contact layer 7 etched so that only the light emitting region remains.
  • the region of the resonator end face 14 having the same horizontal height as that of the active layer 4 is a light emitting point.
  • the p-side electrode 10 is formed across the array laser portion 15 and the handle portion 16 including the light-emitting stripe region 18 and the non-light-emitting region 19. However, the p-side electrode 10 is removed in the vicinity of the resonator end face 14 in the light emitting stripe region 18 and the handle portion 16, and is formed up to the resonator end face 14 in the non-light emitting region 19. However, if the distance from the resonator end surface 14 in the region where the p-side electrode 10 is removed in the light emitting stripe region 18 is too long, no current is injected near the end surface, leading to the occurrence of supersaturated absorption. Therefore, the distance needs to be within 100 ⁇ m.
  • the p-side electrode 10 is removed in the vicinity of the resonator end face 14 in the light emitting stripe region 18. Thereby, it can prevent that the p side electrode 10 hangs down to the light emission point of an end surface. As a result, it is possible to prevent deterioration of characteristics and deterioration of reliability.
  • the p-side electrode 10 is formed up to the resonator end face 14 in the non-light emitting region 19.
  • the gold plating layer 11 can be formed by feeding the plating from this location.
  • the laser chip portion for four chips and the semiconductor laser in the array state provided with the handle portions 16 on both sides thereof have been described.
  • the number of chips is not limited to 1
  • the same effect can be obtained with a semiconductor laser for a chip.
  • FIG. FIG. 3 is a top view showing a semiconductor laser according to Embodiment 2 of the present invention.
  • the present embodiment is different from the first embodiment in the pattern of the p-side electrode 10, but the other configurations are the same as those in the first embodiment.
  • the p-side electrode 10 is removed in the vicinity of the resonator end face 14 in the entire area of the array laser section 15 including the light-emitting stripe region 18 and the non-light-emitting region 19. Thereby, it is possible to prevent the p-side electrode 10 from drooping to the light emitting point on the end face more reliably than in the first embodiment. As a result, it is possible to prevent deterioration of characteristics and deterioration of reliability.
  • the p-side electrode 10 is formed up to the resonator end face 14 in the handle portion 16.
  • the gold plating layer 11 can be formed by feeding the plating from this location. That is, the handle portion 16 also serves as a plating power feeding portion.
  • FIG. FIG. 4 is a top view showing a semiconductor laser according to Embodiment 3 of the present invention.
  • the present embodiment is different from the first embodiment in the pattern of the p-side electrode 10, but the other configurations are the same as those in the first embodiment.
  • the p-side electrode 10 is removed in the vicinity of the cavity end face 14 in the entire semiconductor laser including the array laser part 15 and the handle part 16. Thereby, the p-side electrode 10 can be more reliably prevented from sagging at the light emitting point on the end face than in the second embodiment. As a result, it is possible to prevent deterioration of characteristics and deterioration of reliability.
  • the p-side electrode 10 is formed in the handle portion 16 up to the end face 20 in the direction orthogonal to the resonator direction of the semiconductor multilayer structure 8.
  • the gold plating layer 11 can be formed by feeding the plating from this location. That is, the handle portion 16 also serves as a plating power feeding portion.
  • FIG. FIG. 5 is a top view showing a semiconductor laser according to Embodiment 4 of the present invention.
  • the present embodiment is different from the first embodiment in the pattern of the p-side electrode 10 and the manufacturing method for patterning the p-side electrode 10, but the other configurations are the same as those in the first embodiment.
  • the p-side electrode 10 is removed in the vicinity of the resonator end face 14 in the entire semiconductor laser including the array laser portion 15 and the handle portion 16, and also in the vicinity of the end face 20 in the direction perpendicular to the resonator direction of the semiconductor multilayer structure 8. Has been removed. That is, the p-side electrode 10 is removed in the vicinity of all end faces. Thereby, it can prevent that the p side electrode 10 hangs down to the light emission point of an end surface. As a result, it is possible to prevent deterioration of characteristics and deterioration of reliability.
  • the p-side electrode 10 is formed up to the end face of the semiconductor multilayer structure 8 in the entire semiconductor laser including the array laser part 15 and the handle part 16 before plating.
  • the gold plating layer 11 is formed by plating using the p-side electrode 10 as a power feeding layer. That is, also in the present embodiment, the handle portion 16 also serves as a plating power feeding portion.
  • the p-side electrode 10 is present up to all the end faces, the plating power can be stably supplied.
  • patterning is performed with a resist, and the p-side electrode 10 near the end face of the semiconductor multilayer structure 8 is removed by milling. Thereby, the p-side electrode 10 having the above pattern can be obtained while forming the gold plating layer 11.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne une structure stratifiée semiconductrice (8) ayant des surfaces d'extrémité de résonateur qui se font face les unes aux autres. Une électrode (10) est formée sur la structure stratifiée semiconductrice (8). Une couche de placage d'or (11) est formée sur l'électrode (10). La structure stratifiée semiconductrice (8) a une région de bande électroluminescente (18) formée entre les surfaces d'extrémité de résonateur (14), et des régions non électroluminescentes (19) formées sur les deux côtés de la région de bande électroluminescente (18). L'électrode (10) est formée sur la région de bande électroluminescente (18) et les régions non électroluminescentes (19), et dans la région de bande électroluminescente (18), l'électrode est retirée au niveau de zones proches des surfaces d'extrémité de résonateur (14), et dans la région non électroluminescente (19), l'électrode est formée pour atteindre les surfaces d'extrémité de résonateur (14).
PCT/JP2017/008495 2017-03-03 2017-03-03 Laser à semiconducteur et son procédé de fabrication WO2018158934A1 (fr)

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PCT/JP2017/008495 WO2018158934A1 (fr) 2017-03-03 2017-03-03 Laser à semiconducteur et son procédé de fabrication
JP2017528243A JPWO2018158934A1 (ja) 2017-03-03 2017-03-03 半導体レーザ及びその製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6818946B1 (ja) * 2019-12-04 2021-01-27 三菱電機株式会社 半導体レーザ素子およびその製造方法、半導体レーザ装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005039073A (ja) * 2003-07-15 2005-02-10 Sony Corp 半導体レーザとその製造方法
JP2007019553A (ja) * 2006-10-11 2007-01-25 Advanced Telecommunication Research Institute International 半導体レーザ
JP2013110267A (ja) * 2011-11-21 2013-06-06 Mitsubishi Electric Corp 半導体レーザダイオードとその製造方法
WO2014192206A1 (fr) * 2013-05-29 2014-12-04 パナソニックＩｐマネジメント株式会社 Element emetteur de lumiere a semi-conducteurs

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005039073A (ja) * 2003-07-15 2005-02-10 Sony Corp 半導体レーザとその製造方法
JP2007019553A (ja) * 2006-10-11 2007-01-25 Advanced Telecommunication Research Institute International 半導体レーザ
JP2013110267A (ja) * 2011-11-21 2013-06-06 Mitsubishi Electric Corp 半導体レーザダイオードとその製造方法
WO2014192206A1 (fr) * 2013-05-29 2014-12-04 パナソニックＩｐマネジメント株式会社 Element emetteur de lumiere a semi-conducteurs

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6818946B1 (ja) * 2019-12-04 2021-01-27 三菱電機株式会社 半導体レーザ素子およびその製造方法、半導体レーザ装置
WO2021111536A1 (fr) * 2019-12-04 2021-06-10 三菱電機株式会社 Élément laser à semi-conducteur, son procédé de fabrication, et dispositif laser à semi-conducteur

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