WO2018137282A1 - 微发光二极管显示面板及其制造方法 - Google Patents

微发光二极管显示面板及其制造方法 Download PDF

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WO2018137282A1
WO2018137282A1 PCT/CN2017/077589 CN2017077589W WO2018137282A1 WO 2018137282 A1 WO2018137282 A1 WO 2018137282A1 CN 2017077589 W CN2017077589 W CN 2017077589W WO 2018137282 A1 WO2018137282 A1 WO 2018137282A1
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light emitting
emitting diode
micro light
reflective electrode
micro
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French (fr)
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陈黎暄
李冬泽
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/526,330 priority Critical patent/US20180294254A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G02B19/0066—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED in the form of an LED array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a micro light emitting diode display panel and a method of fabricating the same.
  • a micro LED display is a display that realizes image display by using a high-density and small-sized LED array integrated on one substrate as a display pixel. As with a large-sized outdoor LED display, each pixel can be addressed. It can be seen as a miniature version of the outdoor LED display, which reduces the pixel distance from millimeter to micrometer.
  • the Micro LED display is the same as the Organic Light-Emitting Diode (OLED) display. Light-emitting display, but ⁇ LED display has the advantages of better material stability, longer life and no image imprinting than OLED display, and is considered to be the biggest competitor of OLED display.
  • the size of the prior art Micro LEDs is much smaller than existing pixel sizes.
  • the length and width of the sub-pixels may be about 600 um and 200 um, respectively, while the size of the Micro LED is about 10-50 um. This results in a non-display area with a large area around the Micro LED in the sub-pixel. Since the light emitted by the Micro LED is in all directions, there is more light energy loss in the non-display direction, and the utilization rate of the light source is lower.
  • Another object of the present invention is to provide a method for fabricating a micro light emitting diode display panel, which produces a micro light emitting diode display panel that can improve light utilization.
  • Embodiments of the present invention provide a micro light emitting diode display panel including a substrate substrate and a plurality of micro light emitting diodes, wherein the substrate substrate includes a plurality of sub-pixel regions arranged in an array, and each of the sub-pixel regions is provided with a concave surface. a groove, the inner surface of the groove is covered with a first reflective electrode and a second reflective electrode insulated from each other, and each of the micro light emitting diodes is disposed in one of the grooves, and a pin of the micro light emitting diode The first reflective electrode is connected, and the other pin is connected to the second reflective electrode, and the first reflective electrode and the second reflective electrode reflect light emitted by the micro light emitting diode back to the groove.
  • the method further includes a reflective layer, the reflective layer being located under the recess, the reflective layer reflecting light emitted by the micro light emitting diode back to the recess.
  • the bottom of the groove is provided with a boss, and the boss separates the first reflective electrode and the second reflective electrode.
  • the micro light emitting diode is placed on the boss, and two pins of the micro light emitting diode are disposed on two sides of the boss.
  • the material of the first reflective electrode and the second reflective electrode is aluminum or silver.
  • the plurality of micro light emitting diodes comprise a red micro light emitting diode, a green micro light emitting diode and a blue micro light emitting diode.
  • the plurality of micro light emitting diodes are all GaN micro light emitting diodes, InGaN micro light emitting diodes or AlGaInP micro light emitting diodes.
  • the invention also provides a method for manufacturing a micro light emitting diode display panel, comprising:
  • the substrate substrate comprising a plurality of arrayed sub-pixel regions, each of the sub-pixel regions being provided with a groove;
  • the micro light emitting diode is placed in the recess by a micro transfer method, wherein one pin of the micro light emitting diode is connected to the first light reflecting electrode, and the other pin is connected to the second light reflecting electrode.
  • the reflective electrode layer is formed on the base substrate by a sputtering method or a thermal evaporation method.
  • the step of forming a reflective electrode layer on the substrate, and the step of covering the inner surface of the groove by the reflective electrode layer comprises: coating polydiallyldimethylammonium chloride on the base substrate Surface, at The negatively charged silver nanoparticles are coated on the polydiallyldimethylammonium chloride to form the reflective electrode layer.
  • the groove is provided on the base substrate, and the inner surface of the groove covers the reflective electrode, and the reflective electrode is connected to the micro light emitting diode, and the driving circuit is controlled on the substrate.
  • the light emitting diode emits light, and the light emitted by the micro light emitting diode can be reflected back to the groove through the reflective electrode on the inner surface of the groove, thereby reducing the loss of light energy and improving the utilization rate of the light source.
  • FIG. 1 is a schematic structural diagram of a micro light emitting diode display panel according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a micro light emitting diode display panel according to another embodiment of the present invention.
  • FIG. 3 is a schematic flow chart of a method for manufacturing a micro light emitting diode display panel according to the present invention.
  • FIG. 1 is a schematic structural diagram of a micro light emitting diode display panel according to an embodiment of the present invention.
  • the micro light emitting diode display panel 100 provided in this embodiment includes a base substrate 10 and a plurality of micro light emitting diodes 15.
  • the base substrate 10 includes a plurality of pixel regions (not shown) arranged in an array, and typically each pixel region includes three sub-pixel regions 101 (ie, a dotted line surrounding portion).
  • a groove 11 is disposed on each of the sub-pixel regions 101, and a projection of the groove 11 on the sub-pixel region 101 is included in the sub-pixel region 101.
  • the inner surface of the groove 11 is covered with a first insulation Reflective electrode 12 and second reflective electrode.
  • a gap is formed between the first reflective electrode 12 and the second reflective electrode 13 , and the first reflective electrode 12 and the second reflective electrode 13 are insulated from each other through the gap.
  • the gap is formed at the bottom of the groove 11.
  • One of the micro light emitting diodes 15 is disposed in each of the grooves 11.
  • One pin of the micro light emitting diode 15 is connected to the first light reflecting electrode 12, and the other pin of the micro light emitting diode 15 is connected to the second light reflecting electrode 13.
  • the base substrate 10 is a flexible substrate or a rigid substrate.
  • the base substrate 10 is a glass substrate, and a driving circuit (not shown) is formed on the base substrate 10, and the driving circuit passes through the first reflective electrode 12 and the second reflective electrode. 13 is electrically connected to the micro light emitting diode 15 , and the micro light emitting diode 15 is controlled to emit light through the driving circuit. The light emitted from the micro-light-emitting diode 15 to the first reflective electrode 12 and the second reflective electrode 13 is reflected back to the groove by the first reflective electrode 12 and the second reflective electrode 13 11.
  • the first reflective electrode 12 and the second reflective electrode 13 can be made of a highly reflective metal material.
  • it can be made of aluminum or silver material.
  • the recess 11 is disposed on the base substrate 10, and the inner surface of the recess 11 covers the reflective electrode (the first reflective electrode 12 and the second reflective electrode 13), and the driving circuit and the micro-light emitting diode 15 are connected through the reflective electrode.
  • the driving circuit on the base substrate 10 controls the micro light emitting diode 15 to emit light, and the light emitted by the micro light emitting diode 15 can be reflected back to the groove 11 through the reflective electrode on the inner surface of the groove 11, thereby reducing the loss of light energy. Improve light source utilization.
  • the micro LED display panel further includes a reflective layer 16 .
  • the light reflecting layer 16 is located below the groove 11, and the light reflecting layer 16 faces the bottom of the groove 11. It can be understood that the light reflecting layer 16 is in different layers from the first reflective electrode 12 and the second reflective electrode 13. When light emitted from the micro-light-emitting diode 15 is incident on the bottom of the recess 11, the light incident on the bottom of the recess 11 is returned to the recess 11 by the reflection of the light-reflecting layer 16. The loss of light energy is further reduced, and the utilization rate of the light source is improved.
  • the light reflecting layer 16 can be made of a highly reflective metal material. For example, it can be made of aluminum or silver material.
  • the plurality of micro light emitting diodes 15 include: a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode.
  • a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode constitute a display pixel. That is, three sub-pixel regions 101 are formed. A pixel area.
  • the plurality of micro light emitting diodes 15 are all gallium nitride (GaN) micro light emitting diodes, indium gallium nitride (InGaN) micro light emitting diodes, or aluminum gallium indium phosphide (AlGaInP) micro light emitting diodes.
  • GaN gallium nitride
  • InGaN indium gallium nitride
  • AlGaInP aluminum gallium indium phosphide
  • the common-gradation structure may be used, and the anodes are separated.
  • a plurality of micro light emitting diodes 15 are connected in series, that is, the cathode of the last micro light emitting diode 15 is connected to the anode of the next micro light emitting diode 15. This is not limited.
  • FIG. 2 is a schematic structural diagram of a micro light emitting diode display panel according to another embodiment of the present invention.
  • the difference between this embodiment and the above embodiment is that the bottom of the recess 11 on the base substrate 10 of the micro LED display panel 100' provided in this embodiment is provided with a boss 14.
  • the first reflective electrode 12 and the second reflective electrode 13 are separated by the boss 14 to further insulate the first reflective electrode 12 and the second reflective electrode 13.
  • the micro light emitting diode 15 is placed on the boss 14 , and two pins of the micro light emitting diode are disposed on two sides of the boss 14 .
  • the present invention also provides a method of fabricating the above micro light emitting diode display panel.
  • Figure 3. 3 is a schematic flow chart of a method for manufacturing a micro light emitting diode display panel according to the present invention.
  • the manufacturing method of the present invention mainly comprises the following steps:
  • Step S001 providing a base substrate comprising a plurality of arrayed sub-pixel regions, each of the sub-pixel regions being provided with a groove.
  • the base substrate 10 includes a plurality of pixel regions arranged in an array, typically each of the pixel regions includes three sub-pixel regions 101.
  • a groove 11 is disposed on each of the sub-pixel regions 101, and a projection of the groove 11 on the sub-pixel region 101 is included in the sub-pixel region 101. Further specifically, the groove 11 may be formed on the base substrate 10 by a mask+resist etching method.
  • Step S002 forming a reflective electrode layer on the base substrate, the reflective electrode layer covering the inner surface of the groove.
  • the reflective electrode layer may be formed on the base substrate 10 by a sputtering method or a thermal evaporation method. Specifically, the reflective electrode layer covers the inner surface of the groove 11.
  • the material of the reflective electrode layer can be made of a highly reflective metal material. For example, it can be made of aluminum or silver material.
  • the reflective electrode layer may also be formed by the following steps:
  • Polydiallyldimethylammonium chloride (PDDA) in a cationic polyelectrolyte state is coated on the surface of the base substrate 10; preferably, the concentration of the polydiallyldimethylammonium chloride may be It is 2 mg/mL.
  • the air knife is blown dry; the surface of the negatively charged silver nanoparticles is coated on the polydiallyldimethylammonium chloride, and is also blown dry with an air knife to form a layer of Ag nanoparticle film, that is, a formation
  • the reflective electrode layer is described.
  • the light emitted by the micro-light-emitting diode 15 in the direction around the groove 11 can be re-converged into the light-emitting direction through refraction and reflection, thereby reducing light loss and improving light utilization efficiency.
  • Step S003 forming a photoresist layer on the reflective electrode layer.
  • Step S004 etching the reflective electrode layer through the photoresist layer, so that the bottom portion of the reflective electrode layer located at the recess is separated to form a first reflective electrode and a second reflective electrode.
  • the photoresist layer and the reflective electrode layer may be sequentially etched by a dry etching method to separate the bottom portion of the reflective electrode layer at the recess 11 to form the first reflective electrode 12 and The second reflective electrode 13.
  • a circuit pattern ie, a driving circuit
  • the driving circuit drives the plurality of micro The light emitting diode 15 emits light.
  • Step S005 placing a micro light emitting diode in the recess by a micro transfer method, wherein a pin of the micro light emitting diode is connected to the first reflective electrode, and another pin and the second reflective Electrode connection.
  • the plurality of micro-light-emitting diodes 15 can be obtained by a micro-transfer method, and the specific operation process is as follows: first, a primary substrate is provided, a plurality of micro-light-emitting diodes 15 are generated on the original substrate, and then transmitted through a micro-transfer. The head transfers the plurality of micro light emitting diodes 15 into the grooves 11 on the base substrate 10.
  • the manufacturing method of the micro light-emitting diode display panel of the embodiment by providing a groove on the base substrate, the inner surface of the groove is covered with the reflective electrode, and the reflective electrode is connected to the micro light-emitting diode, and the driving circuit is controlled on the substrate.
  • the light emitting diode emits light, and the light emitted by the micro light emitting diode can be reflected back to the groove through the reflective electrode on the inner surface of the groove, thereby reducing the loss of light energy and improving the utilization rate of the light source.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

提供一种微发光二极管显示面板及其制造方法。显示面板（100）包括衬底基板（10）和多个微发光二极管（15），衬底基板包括多个阵列设置的子像素区域（101），每个子像素区域中设有凹槽（11），凹槽内表面覆盖有相互绝缘的第一反光电极（12）和第二反光电极（13），每个微发光二极管设置于一个凹槽中，微发光二极管的一管脚与第一反光电极连接，另一管脚与第二反光电极连接，第一反光电极和第二反光电极将微发光二极管发出的光线反射回凹槽，从而减少了光能的损耗，提升光源利用率。

Description

微发光二极管显示面板及其制造方法
本发明要求2017年1月24日递交的发明名称为“微发光二极管显示面板及其制造方法”的申请号201710055160.X的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制造方法。
背景技术
微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
现有技术中的Micro LED的尺寸大小远小于现有的像素尺寸。例如，现行的55’FHD显示器，其子像素(R/G/B)的长宽可能分别为600um和200um左右，而Micro LED的尺寸约为10-50um左右。这就导致子像素中Micro LED周围有较大区域的非显示区。由于Micro LED发出的光是向各个方向的，于是有较多的光能损耗在非显示方向上，光源的利用率较低。
发明内容
本发明的目的在于提供一种微发光二极管显示面板，该微发光二极管显示面板可以提升光线的利用率。
本发明的另一目的在于提供微发光二极管显示面板的制造方法，该方法生产出的微发光二极管显示面板可以提升光线的利用率。
为了实现上述目的，本发明实施方式提供如下技术方案：
本发明实施例提供一种微发光二极管显示面板，包括衬底基板和多个微发光二极管，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域中设有凹槽，所述凹槽内表面覆盖有相互绝缘的第一反光电极和第二反光电极，每个所述微发光二极管设置于一个所述凹槽中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接，所述第一反光电极和所述第二反光电极将所述微发光二极管发出的光线反射回所述凹槽。
其中，还包括反光层，所述反光层位于所述凹槽下方，所述反光层将所述微发光二极管发出的光线反射回所述凹槽。
其中，所述凹槽底部设置有凸台，所述凸台将所述第一反光电极和所述第二反光电极隔开。
其中，所述微发光二极管放置于所述凸台上，所述微发光二极管的两个管脚分置于所述凸台两侧。
其中，所述第一反光电极及所述第二反光电极的材料为铝或银。
其中，所述多个微发光二极管包括红色微发光二极管、绿色微发光二极管和蓝色微发光二极管。
其中，所述多个微发光二极管均为GaN微发光二极管、InGaN微发光二极管或AlGaInP微发光二极管。
本发明实施还提供一种微发光二极管显示面板的制造方法，包括：
提供一衬底基板，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域上设置有凹槽；
在所述衬底基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面；
在所述反光电极层上形成光阻层；
透过所述光阻层对所述反光电极层进行蚀刻，使得所述反光电极层之位于所述凹槽底部部分被分开以形成第一反光电极和第二反光电极；
通过微转印法将微发光二极管置于所述凹槽中，其中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接。
其中，采用溅射法或热蒸发法在所述衬底基板上形成所述反光电极层。
其中，所述在所述基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面步骤中包括，将聚二烯丙基二甲基氯化铵涂布于所述衬底基板表面，在 所述聚二烯丙基二甲基氯化铵上涂布带负电的银纳米粒子，以形成所述反光电极层。
本发明实施例具有如下优点或有益效果：
本发明的微发光二极管显示面板及其制造方法中，通过在衬底基板上设置凹槽，并且凹槽内表面覆盖反光电极，通过反光电极与微发光二极管连接，衬底基板上的驱动电路控制所述微发光二极管发光，所述微发光二极管发出的光线可以经凹槽内表面的反光电极反射回凹槽，从而减少了光能的损耗，提升光源利用率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一种实施例的微发光二极管显示面板的结构示意图。
图2为本发明另一实施例的微发光二极管显示面板的结构示意图。
图3为本发明微发光二极管显示面板的制造方法流程示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1。图1为本发明一种实施例的微发光二极管显示面板的结构示意图。本实施例提供的微发光二极管显示面板100包括衬底基板10和多个微发光二极管15。所述衬底基板10包括多个阵列设置的像素区域(图未示出)，通常每个像素区域包括三个子像素区域101(即虚线围绕部分)。每个所述子像素区域101上设置有一个凹槽11，所述凹槽11在所述子像素区域101上的投影包含于所述子像素区域101。所述凹槽11内表面覆盖有相互绝缘的第一 反光电极12和第二反光电极。具体的，所述第一反光电极12与所述第二反光电极13之间形成有间隙，通过所述间隙使得所述第一反光电极12和所述第二反光电极13之间相互绝缘。优选的，所述间隙形成于所述凹槽11底部。每个所述凹槽11中设置有一个所述微发光二极管15。所述微发光二极管15的一管脚与所述第一反光电极12连接，所述微发光二极管15的另一管脚与所述第二反光电极13连接。
具体地，所述衬底基板10为柔性基板或刚性基板。优选的，所述衬底基板10为玻璃基板，所述衬底基板10上形成有驱动电路(图未示出)，所述驱动电路经所述第一反光电极12和所述第二反光电极13后与所述微发光二极管15电性连接，通过所述驱动电路控制所述微发光二极管15发光。所述微发光二极管15照射至所述第一反光电极12及所述第二反光电极13处的光线，会被所述第一反光电极12及所述第二反光电极13反射回所述凹槽11。
进一步具体的，所述第一反光电极12和所述第二反光电极13可以采用高反射性的金属材料制成。例如可以采用铝或银材料制成。
本发明中通过在衬底基板10上设置凹槽11，并且凹槽11内表面覆盖反光电极(第一反光电极12和第二反光电极13)，通过反光电极连接驱动电路和微发光二极管15，衬底基板10上的驱动电路控制所述微发光二极管15发光，所述微发光二极管15发出的光线可以经凹槽11内表面的反光电极反射回凹槽11，从而减少了光能的损耗，提升光源利用率。
进一步的，所述微发光二极管显示面板还包括反光层16。所述反光层16位于所述凹槽11下方，所述反光层16正对所述凹槽11底部。可以理解的是，所述反光层16与所述第一反光电极12及所述第二反光电极13在不同层中。当微发光二极管15发出的光线射入所述凹槽11底部时，此时射入凹槽11底部的光线会在所述反光层16的反射作用下返回所述凹槽11。进一步减少了光能的损耗，提升光源利用率。进一步的，所述反光层16可以采用高反射性的金属材料制成。例如可以采用铝或银材料制成。
具体地，所述多个微发光二极管15包括：红色微发光二极管、绿色微发光二极管和蓝色微发光二极管。具体的，一红色微发光二极管、一绿色微发光二极管及一蓝色微发光二极管构成一个显示像素。即三个子像素区域101形成 一个像素区域。
优选地，所述多个微发光二极管15均为氮化镓(GaN)微发光二极管、氮化铟镓(InGaN)微发光二极管、或磷化铝镓铟(AlGaInP)微发光二极管。
具体的，对于同一直线上的多个微发光二极管15，可以为共阴级结构，阳级分开。当然，其他实施方式中，还可以是但是多个微发光二极管15串联，即上一微发光二极管15的阴极连接下一微发光二极管15的阳极。此处不加以限定。
请参阅图2。图2为本发明另一实施例的微发光二极管显示面板的结构示意图。本实施例与上述实施例的区别点在于，本实施例提供的微发光二极管显示面板100’的衬底基板10上的凹槽11底部设置有凸台14。通过所述凸台14将所述第一反光电极12和所述第二反光电极13隔开，进而实现第一反光电极12和第二反光电极13的绝缘。具体的，所述微发光二极管15放置于所述凸台14上，所述微发光二极管的两个管脚分置于所述凸台14两侧。
本发明还提供一种上述微发光二极管显示面板的制造方法。具体的，请参阅图3。图3为本发明微发光二极管显示面板的制造方法流程示意图。本发明的制造方法主要包括如下步骤：
步骤S001：提供一衬底基板，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域上设置有凹槽。
具体的，请结合参阅图1。所述衬底基板10包括多个阵列设置的像素区域，通常每个像素区域包括三个子像素区域101。每个所述子像素区域101上设置有一个凹槽11，所述凹槽11在所述子像素区域101上的投影包含于所述子像素区域101。进一步具体的，可以通过掩膜版+光阻蚀刻的方法在所述衬底基板10上形成所述凹槽11。
步骤S002：在所述衬底基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面。
具体的，本发明一种实施方式中，可以通过溅射法或热蒸发法在所述衬底基板10上形成所述反光电极层。具体的，所述反光电极层覆盖所述凹槽11内表面。所述反光电极层的材料可以采用高反射性的金属材料制成。例如可以采用铝或银材料制成。
本发明一种可能的实现方式中，还可以经如下步骤形成反光电极层：
采用阳离子聚电解质状态的聚二烯丙基二甲基氯化铵(PDDA)涂布在所述衬底基板10表面；优选的，所述聚二烯丙基二甲基氯化铵的浓度可以为2mg/mL。待风刀吹干后；在所述聚二烯丙基二甲基氯化铵上涂布表面带负电的银纳米粒子，同样以风刀吹干，形成一层Ag纳米粒子薄膜，即形成所述反光电极层。该膜层由于金属特有的光学特性，可以使微发光二极管15向凹槽11周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。
步骤S003：在所述反光电极层上形成光阻层。
步骤S004：透过所述光阻层对所述反光电极层进行蚀刻，使得所述反光电极层之位于所述凹槽底部部分被分开以形成第一反光电极和第二反光电极。
具体的，可通过干法蚀刻的方法依次对所述光阻层和所述反光电极层进行蚀刻，以将反光电极层之位于所述凹槽11底部部分被分开以形成第一反光电极12和第二反光电极13。
可以理解的是，所述衬底基板10上还形成有电路图案(即驱动电路)，以与反光电极层的第一反光电极12及第二反光电极13连接，驱动电路驱动所述多个微发光二极管15发光。
步骤S005：通过微转印法将微发光二极管置于所述凹槽中，其中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接。
所述多个微发光二极管15可通过微转印的方法制得，具体操作过程如下：首先提供一原生基板，在所述原生基板上生成多个微发光二极管15，再通过一微转印传送头将所述多个微发光二极管15转印到衬底基板10上的凹槽11中。
通过本实施例的微发光二极管显示面板的制造方法，通过在衬底基板上设置凹槽，并且凹槽内表面覆盖反光电极，通过反光电极与微发光二极管连接，衬底基板上的驱动电路控制所述微发光二极管发光，所述微发光二极管发出的光线可以经凹槽内表面的反光电极反射回凹槽，从而减少了光能的损耗，提升光源利用率。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述的实施方式，并不构成对该技术方案保护范围的限定。任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等，均应包含在该技术方案的保护范围之内。

Claims (10)

  1. 一种微发光二极管显示面板，其中，包括衬底基板和多个微发光二极管，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域中设有凹槽，所述凹槽内表面覆盖有相互绝缘的第一反光电极和第二反光电极，每个所述微发光二极管设置于一个所述凹槽中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接，所述第一反光电极和所述第二反光电极将所述微发光二极管发出的光线反射回所述凹槽。
  2. 如权利要求1所述的微发光二极管显示面板，其中，还包括反光层，所述反光层位于所述凹槽下方，所述反光层将所述微发光二极管发出的光线反射回所述凹槽。
  3. 如权利要求1所述的微发光二极管显示面板，其中，所述凹槽底部设置有凸台，所述凸台将所述第一反光电极和所述第二反光电极隔开。
  4. 如权利要求3所述的微发光二极管显示面板，其中，所述微发光二极管放置于所述凸台上，所述微发光二极管的两个管脚分置于所述凸台两侧。
  5. 如权利要求1所述的微发光二极管显示面板，其中，所述第一反光电极及所述第二反光电极的材料为铝或银。
  6. 如权利要求1所述的微发光二极管显示面板，其中，所述多个微发光二极管包括红色微发光二极管、绿色微发光二极管和蓝色微发光二极管。
  7. 如权利要求1所述的微发光二极管显示面板，其中，所述多个微发光二极管均为GaN微发光二极管、InGaN微发光二极管或AlGaInP微发光二极管。
  8. 一种微发光二极管显示面板的制造方法，其中，包括：
    提供一衬底基板，所述衬底基板包括多个阵列设置的子像素区域，每个所 述子像素区域上设置有凹槽；
    在所述衬底基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面；
    在所述反光电极层上形成光阻层；
    透过所述光阻层对所述反光电极层进行蚀刻，使得所述反光电极层之位于所述凹槽底部部分被分开以形成第一反光电极和第二反光电极；
    通过微转印法将微发光二极管置于所述凹槽中，其中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接。
  9. 如权利要求8所述的微发光二极管显示面板的制造方法，其中，采用溅射法或热蒸发法在所述衬底基板上形成所述反光电极层。
  10. 如权利要求8所述的微发光二极管显示面板的制造方法，其中，所述在所述基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面步骤中包括，将聚二烯丙基二甲基氯化铵涂布于所述衬底基板表面，在所述聚二烯丙基二甲基氯化铵上涂布带负电的银纳米粒子，以形成所述反光电极层。
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