JP2019087746A - 高解像度ディスプレイ装置 - Google Patents
高解像度ディスプレイ装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 241
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 238000006243 chemical reaction Methods 0.000 claims description 220
- 238000002347 injection Methods 0.000 claims description 51
- 239000007924 injection Substances 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 239000010408 film Substances 0.000 claims description 36
- 239000010409 thin film Substances 0.000 claims description 30
- 230000005540 biological transmission Effects 0.000 claims description 25
- 230000000903 blocking effect Effects 0.000 claims description 24
- 239000003086 colorant Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 760
- 238000005530 etching Methods 0.000 description 26
- 230000031700 light absorption Effects 0.000 description 23
- 239000002096 quantum dot Substances 0.000 description 16
- 230000007480 spreading Effects 0.000 description 11
- 238000003892 spreading Methods 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910021389 graphene Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910004541 SiN Inorganic materials 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- -1 IZO Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
基板と、
前記基板上に順次に積層された第1半導体層、活性層及び第2半導体を含む発光層と、
前記発光層上に設けられ、前記発光層から発せられる光によって所定色相の光を放出する複数の色変換層(color converting layer)と、を含み、
前記発光層は、前記複数の色変換層に対応するように設けられるディスプレイ装置が提供される。
110,210,310,610,710,1010 基板
120,220,320,620,720,1020 発光層
121,221,321,621,721,1021 第1半導体層
122,222,322,622,722,1022 第2半導体層
123,223,323,623,723,1023 活性層
125,225,325,625,725,1025 エッチング領域
131,331 第1電極
132,232,332,632,732,1032 第2電極
140,240,340,640,740,1040 薄膜トランジスタ
150,250,350,650,750,1050 絶縁層
160R,260R,360R,660R,760R,1060R 赤色変換層
160G,260G,360G,660G,760G,1060G 緑色変換層
160B,360B,760B,1060B 青色透過層
260B,660B 青色変換層
170,270,370,670,770,1070 ブラックマトリックス
337,637,738,1036 電流注入制限層
380,680,780,1080 光吸収部材
410,810,1110 選択的透明絶縁層
420,820,1120 選択的遮断層
510,910,1210 光吸収層
Claims (25)
- 基板と、
前記基板上に順次に積層された第1半導体層、活性層及び第2半導体層を含む発光層と、
前記発光層上に設けられ、前記発光層から発せられる光により、所定色相の光を放出する複数の色変換層と、を含み、
前記発光層は、前記複数の色変換層に対応するように設けられるディスプレイ装置。 - 前記第1半導体層と電気的に連結されるように設けられる少なくとも1つの第1電極と、
前記第2半導体層と電気的に連結されるように設けられる複数の第2電極と、を含むことを特徴とする請求項1に記載のディスプレイ装置。 - 前記第2電極と接触する前記第2半導体層の接触領域周囲は、一定深さ以下にエッチングされることを特徴とする請求項2に記載のディスプレイ装置。
- 前記各第1電極は、前記複数の色変換層のうち少なくとも1層に対応するように設けられ、共通電極を構成し、前記複数の第2電極は、前記複数の色変換層に一対一対応するように設けられることを特徴とする請求項2または3に記載のディスプレイ装置。
- 前記複数の第2電極は、それぞれ薄膜トランジスタに連結されることを特徴とする請求項2〜4のいずれか1つに記載のディスプレイ装置。
- 前記第2半導体層上に設けられ、前記複数の第2電極から、前記第2半導体層に注入される電流を制限する電流注入制限層をさらに含むことを特徴とする請求項2〜5のいずれか1つに記載のディスプレイ装置。
- 前記電流注入制限層のオープンされた部分を介して、前記第2電極と接触する前記第2半導体層の接触領域周囲は、一定深さ以下にエッチングされることを特徴とする請求項6に記載のディスプレイ装置。
- 前記電流注入制限層は、絶縁膜を含むことを特徴とする請求項6または7に記載のディスプレイ装置。
- 前記電流注入制限層は、多層絶縁膜を含むことを特徴とする請求項6または7に記載のディスプレイ装置。
- 前記多層絶縁膜は、屈折率が互いに異なる複数層を含むことを特徴とする請求項9に記載のディスプレイ装置。
- 前記電流注入制限層は、絶縁膜、及び前記絶縁膜内部に設けられる金属反射層を含むことを特徴とする請求項6または7に記載のディスプレイ装置。
- 前記金属反射層は、第1金属層と、前記第1金属層上に設けられるものであり、前記第1金属層より高い反射率を有する第2金属層と、を含むことを特徴とする請求項11に記載のディスプレイ装置。
- 前記電流注入制限層は、前記第2半導体層上に設けられる金属反射層、及び前記金属反射層を覆うように設けられる絶縁膜を含むことを特徴とする請求項6に記載のディスプレイ装置。
- 前記複数の第2電極と、前記複数の色変換層との間に設けられるものであり、前記発光層から発せられる光は透過させ、前記複数の色変換層から発せられる光は、反射させる選択的透明絶縁層をさらに含むことを特徴とする請求項6〜13のいずれか1つに記載のディスプレイ装置。
- 前記複数の色変換層上に設けられ、特定色相の光を遮断する選択的遮断層をさらに含むことを特徴とする請求項6〜14のいずれか1つに記載のディスプレイ装置。
- 前記基板と前記第1半導体層との間、または前記第1半導体層の内部に設けられる光吸収層をさらに含むことを特徴とする請求項6〜15のいずれか1つに記載のディスプレイ装置。
- 前記基板と前記第1半導体層との間に設けられるものであり、光反射低減のための屈折率整合層をさらに含むことを特徴とする請求項6〜15のいずれか1つに記載のディスプレイ装置。
- 前記屈折率整合層は、AlNを含むことを特徴とする請求項17に記載のディスプレイ装置。
- 前記基板の下面に設けられる光吸収部材をさらに含むことを特徴とする請求項6〜15のいずれか1つに記載のディスプレイ装置。
- 前記第1半導体層及び第2半導体層は、それぞれn−GaN及びp−GaNを含み、前記活性層は、多重量子井戸(MQW)構造を有することを特徴とする請求項1〜19のいずれか1つに記載のディスプレイ装置。
- 前記発光層は、青色光を発生させることを特徴とする請求項1〜20のいずれか1つに記載のディスプレイ装置。
- 前記複数の色変換層は、前記青色光によって励起され、赤色光を放出する赤色変換層、前記青色光によって励起され、緑色光を放出する緑色変換層、及び前記青色光を透過させる青色透過層を含むことを特徴とする請求項21に記載のディスプレイ装置。
- 前記発光層は、紫外線(UV)を発生させることを特徴とする請求項1〜20のいずれか1つに記載のディスプレイ装置。
- 前記複数の色変換層は、前記紫外線によって励起され、赤色光を放出する赤色変換層、前記紫外線によって励起され、緑色光を放出する緑色変換層、及び前記紫外線によって励起され、青色光を放出する青色変換層を含むことを特徴とする請求項23に記載のディスプレイ装置。
- 前記発光層は、前記基板上に、前記第1半導体層、前記活性層及び前記第2半導体層を順次に成長させて形成されることを特徴とする請求項1〜24のいずれか1つに記載のディスプレイ装置。
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