WO2021097736A1 - 一种微器件及其制备方法 - Google Patents

一种微器件及其制备方法 Download PDF

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Publication number
WO2021097736A1
WO2021097736A1 PCT/CN2019/119811 CN2019119811W WO2021097736A1 WO 2021097736 A1 WO2021097736 A1 WO 2021097736A1 CN 2019119811 W CN2019119811 W CN 2019119811W WO 2021097736 A1 WO2021097736 A1 WO 2021097736A1
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layer
semiconductor layer
micro device
light
quantum well
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PCT/CN2019/119811
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English (en)
French (fr)
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伍凯义
钟光韦
杨然翔
江仁杰
沈佳辉
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重庆康佳光电技术研究院有限公司
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Priority to PCT/CN2019/119811 priority Critical patent/WO2021097736A1/zh
Priority to CN201980002740.XA priority patent/CN110998871A/zh
Publication of WO2021097736A1 publication Critical patent/WO2021097736A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings

Definitions

  • the invention relates to the field of semiconductor display technology, in particular to a micro device and a preparation method thereof.
  • micro-organic light-emitting diode As compared with liquid crystal display (LCD), micro-organic light-emitting diode (Micro-LED) as a current-type light-emitting device, because of its self-luminescence, and higher luminous efficiency, color Saturation, brightness, reliability, and the ability to be fabricated on flexible substrates are increasingly being used in the field of high-performance displays.
  • the current Micro-LED generates light after being driven by current, but because the light is scattered, the light-emitting angle is large (generally, the light-emitting angle of the Micro-LED is greater than 120 degrees). If the Micro-LED directly emits light, it will cause Micro-LEDs affect each other's light-emitting effect.
  • a light-shielding layer is designed on the backplane to improve. As shown in FIG. 2, a light-shielding layer (BM) is provided between each Micro-LED for shielding, so that adjacent Micro-LEDs are shielded. -The light emission between the LEDs is not affected, but abnormal light leakage will occur when the backplane drives the light-shielding layer.
  • the technical problem to be solved by the present invention is to provide a micro device and a preparation method thereof in view of the above-mentioned lack of well in the prior art, which aims to solve the problem of efficiency waste caused by a large light-emitting angle in the existing Micro LED.
  • a micro device comprising a first semiconductor layer, a multiple quantum well layer, a second semiconductor layer, a first electrode and a second electrode, the multiple quantum well layer is arranged on the first semiconductor layer and the second semiconductor layer In between, the first electrode is coupled to the first semiconductor layer, the second electrode is coupled to the second semiconductor layer, and the micro device further includes a light concentrating layer formed on the micro device The outer side is wrapped at least on the outer side surface of the multiple quantum well layer.
  • the micro device wherein the light concentration layer is also wrapped around the outer side of the first semiconductor layer, the light concentration layer includes a transparent layer and a reflective layer, and the transparent layer is wrapped around the first semiconductor layer.
  • a semiconductor layer and an outer side surface of the multiple quantum well layer, the reflective layer is formed on the transparent layer and completely covers the side of the transparent layer away from the micro device.
  • the micro device wherein the light concentration layer is also wrapped on the outer side of the second semiconductor layer, the light concentration layer includes a transparent layer and a reflective layer, and the transparent layer is wrapped around the second semiconductor layer.
  • the second semiconductor layer and the outer side surface of the multiple quantum well layer, the reflective layer is formed on the transparent layer and completely covers the side of the transparent layer away from the micro device.
  • the light concentrating layer is also wrapped around the outer sides of the first semiconductor layer and the second semiconductor layer, the light concentrating layer includes a transparent layer and a reflective layer, the transparent layer Wrapped on the outer side surface of the first semiconductor layer, the multiple quantum well layer and the second semiconductor layer, the reflective layer is formed on the transparent layer and completely covers the side of the transparent layer away from the micro device.
  • the first semiconductor layer is an N-type semiconductor layer
  • the second semiconductor layer is a P-type semiconductor layer.
  • the first electrode is an N electrode
  • the second electrode is a P electrode
  • the transparent layer is coated on the outside of the micro device by chemical vapor deposition, and the reflective layer is coated on the transparent layer by physical vapor deposition.
  • the transparent layer is an insulating material for sound and heat insulation.
  • the reflective layer is made of a metal material.
  • the reflection angle shape of the reflection layer is a rhombus or a wave shape.
  • micro device wherein the micro device further includes a protective layer, and the protective layer is wrapped around the outer surface of the first semiconductor layer or the second semiconductor layer.
  • a method for manufacturing a micro device wherein the manufacturing method includes:
  • At least a light concentrating layer is wrapped around the outer side of the multiple quantum well layer.
  • the wrapping the light concentration layer at least on the outer side of the multiple quantum well layer further includes:
  • the light concentration layer includes a transparent layer and a reflective layer.
  • the first semiconductor layer is an N-type semiconductor layer
  • the second semiconductor layer is a P-type semiconductor layer.
  • the present invention provides a micro device and a preparation method thereof.
  • the micro device includes a first semiconductor layer, a multiple quantum well layer, a second semiconductor layer, a first electrode, and a second electrode, and the multiple quantum well layer is provided Between the first semiconductor layer and the second semiconductor layer, the first electrode is coupled to the first semiconductor layer, and the second electrode is coupled to the second semiconductor layer.
  • a light concentration layer is formed on the outer side surface of the micro-devices, which reduces the light-emitting angle of the micro-devices, restricts the light-emitting direction, and each monochromatic micro-devices emit light independently without affecting each other, so that the light source is more concentrated, which effectively solves the waste of efficiency , Which greatly improves the luminous efficiency.
  • Fig. 1 is a schematic diagram of Micro-LED light emission in the prior art.
  • Fig. 2 is a schematic diagram of the Micro-LED in the prior art using a light shielding layer to improve the light emitting angle.
  • Fig. 3 is a schematic diagram of the internal structure of a micro device of the present invention.
  • Fig. 4 is a schematic diagram of a three-dimensional structure of a micro device in the present invention.
  • Fig. 5a is a working schematic diagram of a micro device of the present invention when light is emitted upwards.
  • Fig. 5b is a schematic diagram of the operation of a micro device in the present invention when light is emitted downward.
  • Fig. 6a is a diagram of the working principle when the reflection angle of the reflective layer of a micro device in the present invention is a rhombus.
  • Fig. 6b is a diagram of the working principle when the reflection angle of the reflective layer of a micro device of the present invention is wavy.
  • Fig. 7 is a flow chart of a method for manufacturing a micro device in the present invention.
  • the improved micro-device of the present invention is different from the traditional Micro-LED. Because the traditional Micro-LED has a larger light-emitting angle, if the light is directly emitted, the mutual influence of the light-emitting effect between the Micro-LEDs will be caused.
  • a light-shielding layer is arranged between each Micro-LED to block the divergent light to avoid the light emission between adjacent Micro-LEDs. However, the light-shielding layer does not fundamentally improve the angle of light emission, but only If shielded, there will still be light leakage, regardless of whether the individual Micro-LEDs influence the luminous effect of each other or the light leakage generated by the light shielding layer will cause waste of luminous efficacy and reduce the luminous efficiency of Micro-LEDs.
  • a light concentration layer is formed on the outside of the traditional Micro-LED.
  • the light concentration layer can realize the modulation of the emission direction. By limiting the light emission direction, the angle of light divergence can be effectively reduced, so that the light source is more concentrated.
  • the efficiency of the Micro-LED is improved, so that the current driving the Micro-LED is proportional to the power of the emitted light, and the luminous efficiency is effectively improved.
  • FIG. 3 is a schematic diagram of the internal structure of a micro device in the present invention
  • FIG. 4 is a schematic diagram of a three-dimensional structure of a micro device in the present invention.
  • the micro device includes a first semiconductor layer 101, The quantum well layer 102, the second semiconductor layer 103, the first electrode 105 and the second electrode 106, the multiple quantum well layer 102 is disposed between the first semiconductor layer 101 and the second semiconductor layer 103, the first electrode 105 is coupled to the first semiconductor layer 101, the second electrode 106 is coupled to the second semiconductor layer 103, the micro device further includes a light concentrating layer 200, the light concentrating layer 200 is formed on the outside of the micro device and It is wrapped at least on the outer side of the multiple quantum well layer 102.
  • the micro device further includes a protective layer 104 for protecting internal components of the micro device, and the protective layer 104 is wrapped on the first The outer surface of the semiconductor layer 101 or the second semiconductor layer 103.
  • the first semiconductor layer is an N-type semiconductor layer
  • the second semiconductor layer is a P-type semiconductor layer
  • the first electrode is an N electrode
  • the second electrode is a P electrode
  • the first semiconductor layer may also be a P-type semiconductor layer
  • the second semiconductor layer is an N-type semiconductor layer
  • the first electrode is a P electrode
  • the second electrode is an N electrode, as long as it conforms to the corresponding type of semiconductor layer. Just match with the corresponding electrode.
  • the light concentrating layer 200 By wrapping a light concentrating layer 200 on the outside of the micro device and at least on the outer side of the multiple quantum well layer 102, when the light emitted by the multiple quantum well layer 102 irradiates the light concentrating layer 200 from both sides, the light will be Reflect according to the set reflection angle, so that the emitted light is concentrated upwards and downwards, the light emitted by the light source becomes concentrated, and the light emitted between adjacent micro-devices will not interfere with each other, and the light-emitting effect will not be affected, thereby improving The luminous efficiency of the micro device is improved.
  • the first semiconductor layer 101 may be doped with a pentavalent element, such as phosphorus, in a pure semiconductor material, such as gallium nitride (GaN), to form the first semiconductor layer 101 described above.
  • a pentavalent element such as phosphorus
  • GaN gallium nitride
  • free electrons have multiple sons, and hole sites have fewer sons, and conduction mainly depends on free electrons.
  • Valence elements such as boron, form the second semiconductor layer 103.
  • the light concentration layer 200 is also wrapped around the outer sides of the first semiconductor layer 101 and the multiple quantum well layer 102, and includes a transparent layer 201 and a reflective layer 202.
  • the transparent layer 201 is formed on the micro
  • the outer side of the device is wrapped on the outer side of the first semiconductor layer 101 and the multiple quantum well layer 102, and the reflective layer 202 is formed on the transparent layer 201 and completely covers the side of the transparent layer 201 away from the micro device.
  • the light concentration layer 200 may also be wrapped on the outer side of the second semiconductor layer 103 and the multiple quantum well layer 102, and the corresponding transparent layer 201 may also be wrapped on the second semiconductor layer at the same time. 103 and the outer side of the multiple quantum well layer 102, the reflective layer 202 also completely covers the side of the transparent layer 201 away from the micro device.
  • the transparent layer 201 and the reflective layer 202 are covered on the first semiconductor layer 101 and the multiple quantum well layer 102.
  • the transparent layer 201 and the reflective layer 202 are covered on the outer sides of the second semiconductor layer 103 and the multiple quantum well layer 102, so that the light is concentrated downward.
  • the position of the first semiconductor layer 101 and the second semiconductor layer 103 can be that the first semiconductor layer 101 is below the upper and second semiconductor layer 103, or the first semiconductor layer 101 is on the bottom and the second semiconductor layer 103 is on the top. It is just an example, and the present invention does not specifically limit it.
  • the light concentration layer 200 is also wrapped around the outer sides of the first semiconductor layer 101, the multiple quantum well layer 102, and the second semiconductor layer 103, and the transparent layer 201 is wrapped around the first semiconductor layer.
  • Layer 101, multiple quantum well layer 102 and the outer side surface of the second semiconductor layer 103, the reflective layer 202 is formed on the transparent layer 201 and completely covers the side of the transparent layer 201 away from the micro device, when it is needed to be more concentrated
  • the transparent layer 201 and the reflective layer 202 can be covered on the outer sides of the first semiconductor layer 101, the multiple quantum well layer 102, and the second semiconductor layer 103 when the light source is used.
  • the first semiconductor layer 101 and the second semiconductor layer 103 are obtained With complete coverage, the light emitted from the multiple quantum well layer can only be emitted toward the pre-opening direction, resulting in more concentrated light.
  • the transparent layer 201 in the light concentration layer 200 is used to transmit light to the reflective layer 202, and the reflective layer 202 reflects the light through a certain angle. Since most of the materials that can achieve the purpose of light reflection are generally metal materials, but metal materials are generally conductors, if the conductor directly contacts the semiconductor, it will cause the phenomenon of short circuit of the micro device. Therefore, the reflective layer 202 and the semiconductor are transparent in this embodiment.
  • the layers 201 are separated, and the transparent material is generally an insulator. The transparent insulator can prevent the reflective layer 202 from being short-circuited with the semiconductor layer, and avoid excessive consumption of light, so as to achieve the required light reflection effect.
  • the light concentrating layer 200 can be a separate layer, that is, it is not divided into a transparent layer 201 and a reflective layer 202, but if the light concentrating layer 200 is a separate layer, it should be at the same time. It has the function of reflection and insulation, so that it can not only reflect the light in a concentrated manner, but also avoid the problem of short circuit.
  • the transparent layer 201 is coated on the outside of the micro device by chemical vapor deposition, and the reflective layer 202 is coated on the transparent layer 201 by physical vapor deposition.
  • the coating position of the layer 201 and the reflective layer 202 can be adjusted according to the light emitting direction required by the micro device in actual use.
  • FIG. 5a is a schematic diagram of the operation of a micro device of the present invention when light is emitted upward
  • FIG. 5b is a schematic diagram of the operation of a micro device of the present invention when light is emitted downward.
  • the transparent layer and the reflective layer can be coated in the desired direction according to the product requirements.
  • the first semiconductor layer 101 is on the bottom, the multiple quantum well layer 102 is in the middle, and the second semiconductor layer 103 is on the top, as shown in Figure 5a
  • the opening direction should be upward, and the transparent layer 201 and the reflective layer 202 only need to be coated on the outer sides of the first semiconductor layer 101 and the multiple quantum well layer 102, so that the light is emitted upwards in a concentrated manner.
  • the transparent layer 201 and the reflective layer 202 can be coated on the outer sides of the second semiconductor layer 103 and the multiple quantum well layer 102, so that the light is concentrated and emitted downward.
  • the transparent layer 201 and the reflective layer 202 can be directly coated on the outside of the multiple quantum well layer 102 to reflect the side light and avoid side light emission, so that the light is concentrated from above and below the micro device Projected.
  • the transparent layer 201 and the reflective layer 202 can be selectively coated on the corresponding positions of the micro device according to the light emitting direction.
  • the transparent layer 201 is an insulating material for sound and heat insulation, such as SiOx, SiNx, etc.
  • the specific material is not limited in the present invention, as long as it can achieve the functions of sound insulation, heat insulation and insulation.
  • the reflective layer 202 is made of a metal material, such as Al, Cr, Ag, etc.
  • the specific material is not limited in the present invention, as long as it can reflect light.
  • the reflection angle shape of the reflective layer 202 is a rhombus or wave shape. It should be noted that the reflection angle shape of the reflection layer 202 is not limited to the above rhombus or wave shape. For specific use, it can be based on actual conditions. Both the direction and the angle of light emission can be coated with the reflective layer 202 with different types of reflection angles.
  • Figure 6a is a diagram of the working principle when the reflection angle of the reflective layer of a micro device in the present invention is a rhombus.
  • Figure 6b is a wave of reflection angle of the reflective layer of a micro device in the present invention.
  • the working principle diagram of the shape As shown in Figure 6a, it can be seen that when the reflection angle is a rhombus, the incident light (arrows pointing downwards indicates incident light), all of which are reflected by the reflection angle to produce a relatively dense reflected light (arrows pointing upwards indicate reflected light), as shown in the figure As shown in 6b, when the shape of the reflection angle is wavy, the incident light is more scattered and reflected.
  • the specific shape of the reflection angle is not specifically limited in the present invention.
  • the first electrode 105 and the second electrode 106 are located on the same plane, and the specific electrode positions can be placed in different positions depending on the lighting pattern. For example, when the above-mentioned micro device needs to emit light from the upward opening, the first electrode 105 and The second electrode 106 is placed in the direction of the opening. In the same way, the positions of the two electrodes at different opening positions are also changed, so that the first electrode 105 is coupled to the corresponding first semiconductor layer 101, and the second electrode 106 is connected to the corresponding The second semiconductor layer 103 is coupled as long as it can transmit the corresponding electrical signal.
  • the multiple quantum well layer 102 is formed by chemical vapor deposition of metal organic compounds.
  • the multiple quantum well layer 102 is the main light-emitting layer structure, and the first semiconductor layer 101 and the second semiconductor layer 103 emit light in the multiple quantum well layer 102, for example
  • the first semiconductor layer is an N-type semiconductor layer and the second semiconductor layer is a P-type semiconductor layer
  • a PN junction is formed at the junction of the two, and light is emitted in the multiple quantum well layer 102.
  • the present invention also provides a method for manufacturing a micro device, as shown in FIG. 7, which is a flow chart of a method for manufacturing a micro device of the present invention.
  • the preparation method includes:
  • a multiple quantum well layer is provided between the first semiconductor layer and the second semiconductor layer;
  • the first semiconductor layer may be a pure semiconductor material, such as gallium nitride (GaN), doped with a pentavalent element, such as phosphorus, to form the above-mentioned first semiconductor layer.
  • GaN gallium nitride
  • a pentavalent element such as phosphorus
  • free electrons are multiple, Hole sites have fewer sons, and mainly rely on free electrons to conduct electricity. The higher the concentration of multiple sons (free electrons), the stronger the conductivity of the first semiconductor layer; similarly, the second semiconductor layer can be in a pure semiconductor material, such as nitride Gallium (GaN) is doped with trivalent elements, such as boron, to form a second semiconductor layer.
  • holes are multiple sons and free electrons are minority sons, and holes are mainly used to conduct electricity.
  • the first electrode and the second electrode are arranged on the same plane, the corresponding first electrode passes through the protective layer and the multiple quantum well layer and is coupled to the first semiconductor layer, and the second electrode passes through the protective layer and the second semiconductor layer. Layer coupling.
  • At least wrapping a light concentrating layer on the outer side of the multiple quantum well layer further includes:
  • the light concentration layer includes a transparent layer and a reflective layer
  • the first semiconductor layer is an N-type semiconductor layer
  • the second semiconductor layer is a P-type semiconductor layer.
  • the light concentration layer includes a transparent layer and a reflective layer.
  • the reflective layer is formed on the transparent layer.
  • the transparent layer is an insulating material for sound and heat insulation.
  • the reflective layer is a metal material. The reflective angle of the reflective layer can effectively The light emitted by the micro device is reflected to make the light source more concentrated.
  • the above-mentioned light concentration layer can also wrap the first semiconductor layer, the multiple quantum well layer and the second semiconductor layer separately according to the light emission direction of actual needs. The light emitting direction is explained in detail, so I won’t repeat it here.
  • the first semiconductor layer, the multiple quantum well layer, the second semiconductor layer and the protective layer are sequentially covered on the substrate, and the light concentration layer can be wrapped with the substrate or the protective layer. According to the actual situation, the substrate is removed and then the light concentration layer is wrapped. The removal of the substrate does not affect the function of the micro device, and the specific situation depends on the usage.
  • the traditional Micro-LED generates light after being driven by current, but because the light is in a scattered state, it is easy to cause subsequent efficiency waste.
  • the current input is not proportional to the output of the light power.
  • a light concentration layer is provided with different reflection angles. The design makes the light source more concentrated, and can match different light emission directions to deposit the light concentration layer in different positions; in actual use, since the light-emitting angle of the micro device is about 120 degrees, it needs to be wrapped around the outside of the micro device.
  • a layer of light concentration layer so that the emitted light is concentrated in one place.
  • the light concentration layer includes a transparent layer and a reflective layer.
  • the transparent layer is an insulating material for sound and heat insulation.
  • the materials that achieve the purpose of light reflection are generally metal materials, but metal materials are generally conductors. If the conductor directly contacts the semiconductor, it will cause the short circuit of the micro device. Therefore, it is necessary to separate the reflective layer from the semiconductor transparent layer and pass through the transparent layer. To transmit light to the reflective layer, the reflective layer reflects the light through a certain angle, which prevents the reflective layer from being short-circuited with the semiconductor layer and avoids excessive consumption of light efficiency, thereby achieving the required light reflection effect.
  • the present invention provides a micro device and a preparation method thereof.
  • the micro device includes a first semiconductor layer, a multiple quantum well layer, a second semiconductor layer, a first electrode, and a second electrode.
  • the well layer is provided between the first semiconductor layer and the second semiconductor layer, the first electrode is coupled to the first semiconductor layer, and the second electrode is coupled to the second semiconductor layer.
  • a light concentration layer is formed on the outer side of the quantum well layer, which reduces the light output angle of the micro device, restricts the light direction, and each monochromatic micro device emits light independently without affecting each other, so that the light source is more concentrated, which is an effective solution The efficiency is wasted, and the luminous efficiency is greatly improved.

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Abstract

一种微器件及其制备方法，所述微器件包括第一半导体层（101）、多量子阱层（102）、第二半导体层（103）、第一电极（105）和第二电极（106），所述多量子阱层（102）设置在所述第一半导体层（101）与第二半导体层（103）之间，所述第一电极（105）与第一半导体层（101）耦接，所述第二电极（106）与第二半导体层（103）耦接，通过至少在所述多量子阱层（102）的外侧面形成一层光集中层（200），使得微器件的出光角度缩小，限制出光方向，并且各个单色微器件之间独立发光，不会相互影响，以使得光源更集中，有效的解决了效能浪费，大大提高了发光效率。

Description

一种微器件及其制备方法 技术领域
本发明涉及半导体显示技术领域，尤其涉及的是一种微器件及其制备方法。
背景技术
随着显示技术的不断发展，相对液晶显示屏(LCD)而言，微型有机发光二极管(Micro-LED)作为一种电流型发光器件，因其具有的自发光、以及较高的发光效率、色彩饱和度、亮度、可靠性，并且可制作在柔性衬底上等特点而越来越多地被应用于高性能显示领域当中。如图1所示，目前Micro-LED受电流驱动后产生光，但因为光为散射状态导致发光角度大(一般Micro-LED发光角度大于120度)，若直接让Micro-LED进行发光，会使得Micro-LED之间相互影响发光效果，角度过大不仅容易使得相邻像素点之间漏光或光的颜色不均匀，并且还会造成后续的效能浪费。现有技术中为了解决该问题会在背板设计遮光层(BM)来进行改善，如图2所示，在每一个Micro-LED之间设置遮光层(BM)进行遮挡，以使得相邻Micro-LED之间发光不受影响，但是在背板驱动遮光层时会产生漏光异常的现象。
因此，现有技术还有待于改进和发展。
发明内容
本发明要解决的技术问题在于，针对现有技术的上述缺阱，提供一种微器件及其制备方法，旨在解决现有Micro LED中发光角度大造成效能浪费的问题。
本发明解决技术问题所采用的技术方案如下：
一种微器件，其中，包括第一半导体层、多量子阱层、第二半导体层、第一电极和第二电极，所述多量子阱层设置在所述第一半导体层与第二半导体层之间，所述第一电极与第一半导体层耦接，所述第二电极与第二半导体层耦接，所述微器件还包括光集中 层，所述光集中层形成于所述微器件外侧并至少包裹在所述多量子阱层的外侧面。
进一步的，所述的微器件，其中，所述光集中层还包裹在所述第一半导体层的外侧面，所述光集中层包括透明层和反射层，所述透明层包裹在所述第一半导体层和多量子阱层的外侧面，所述反射层形成于透明层上并完全覆盖所述透明层远离所述微器件的一侧。
进一步的，所述的微器件，其中，所述光集中层还包裹在所述第二半导体层的外侧面，所述光集中层包括透明层和反射层，所述透明层包裹在所述第二半导体层和多量子阱层的外侧面，所述反射层形成于透明层上并完全覆盖所述透明层远离所述微器件的一侧。
进一步的，所述的微器件，其中，所述光集中层还包裹在所述第一半导体层以及第二半导体层的外侧面，所述光集中层包括透明层和反射层，所述透明层包裹在所述第一半导体层、多量子阱层以及第二半导体层的外侧面，所述反射层形成于透明层上并完全覆盖所述透明层远离所述微器件的一侧。
进一步的，所述的微器件，其中，所述第一半导体层为N型半导体层，所述第二半导体层为P型半导体层。
进一步的，所述的微器件，其中，所述第一电极为N电极，所述第二电极为P电极。
进一步的，所述的微器件，其中，所述透明层通过化学气相沉积涂覆在所述微器件外侧，所述反射层通过物理气相沉积涂覆在所述透明层上。
进一步的，所述的微器件，其中，所述透明层为隔音和隔热的绝缘材料。
进一步的，所述的微器件，其中，所述反射层为金属材料。
进一步的，所述的微器件，其中，所述反射层的反射角形状为菱形或波浪型。
进一步的，所述的微器件，其中，所述微器件还包括保护层，所述保护层包裹在所述第一半导体层或第二半导体层的外侧面。
一种微器件的制备方法，其中，所述制备方法包括：
在所述第一半导体层和第二半导体层之间设置多量子阱层；
将所述第一电极与所述第一半导体层耦接，所述第二电极与所述第二半导体层耦接；
至少在所述多量子阱层的外侧面包裹光集中层。
进一步的，所述的微器件的制备方法，其中，所述至少在所述多量子阱层的外侧面包裹光集中层还包括：
在所述多量子阱层和第一半导体层的外侧面包裹光集中层；
或者在所述多量子阱层和第二半导体层的外侧面包裹光集中层；或者在所述多量子阱层、第一半导体层以及第二半导体层的外侧面包裹光集中层。
进一步的，所述的微器件的制备方法，其中，所述光集中层包括透明层和反射层。
进一步的，所述的微器件的制备方法，其中，所述第一半导体层为N型半导体层，所述第二半导体层为P型半导体层。
有益效果：本发明提供一种微器件及其制备方法，所述微器件包括第一半导体层、多量子阱层、第二半导体层、第一电极和第二电极，所述多量子阱层设置在所述第一半导体层与第二半导体层之间，所述第一电极与第一半导体层耦接，所述第二电极与第二半导体层耦接，通过至少在所述多量子阱层的外侧面形成一层光集中层，使得微器件的出光角度缩小，限制出光方向，并且各个单色微器件之间独立发光，不会相互影响，以使得光源更集中，有效的解决了效能浪费，大大提高了发光效率。
附图说明
图1是现有技术中Micro-LED发光的示意图。
图2是现有技术中Micro-LED通过遮光层改善发光角度的示意图。
图3是本发明中一种微器件的内部结构示意图。
图4是本发明中一种微器件的三维结构示意图。
图5a是本发明中一种微器件向上出光时的工作示意图。
图5b是本发明中一种微器件向下出光时的工作示意图。
图6a是本发明中一种微器件的反射层的反射角为菱形时的工作原理图。
图6b是本发明中一种微器件的反射层的反射角为波浪形时的工作原理图。
图7是本发明中一种微器件的制备方法的流程图。
具体实施方式
为使本发明的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
在实施方式和申请专利范围中，除非文中对于冠词有特别限定，否则“一”与“所述”可泛指单一个或复数个。
另外，若本发明实施例中有涉及“第一”、“第二”等的描述，则该“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本发明要求的保护范围之内。
本发明改进后的微器件与传统的Micro-LED不同，由于传统的Micro-LED发光角度较大，若直接进行发光会使得各个Micro-LED之间的相互影响发光效果，而现有技术中在每一个Micro-LED之间都设置有遮光层，来遮挡发散的光以避免相邻的Micro-LED之间发光不受影响，但是遮光层并不能从根本上改进发出光线的角度，而仅仅只是遮挡的话还是会有漏光现象，而不管是各个的Micro-LED相互影响发光效果还是遮光层产生的漏光现象都会造成发光效能的浪费，降低了Micro-LED的发光效率，因此，本申请中的微器件，在传统的Micro-LED外侧形成了一层光集中层，通过光集中层可实现对发出方向的调制，通过限制出光方向可以有效减小光发散的角度，使得光源更加集中，如此就能让Micro-LED效能提升，使得驱动Micro-LED的电流与发出光的功率成正比，有效提升发光效率。
请参见图3和图4，图3是本发明中一种微器件的内部结构示意图，图4是本发明中一种微器件的三维结构示意图，所述微器件包括第一半导体层101、多量子阱层102、第二半导体层103、第一电极105和第二电极106，所述多量子阱层102设置在所述第一半导体层101与第二半导体层103之间所述第一电极105与第一半导体层101耦接， 所述第二电极106与第二半导体层103耦接，所述微器件还包括光集中层200，所述光集中层200形成于所述微器件外侧并至少包裹在所述多量子阱层102、的外侧面，值得一提的是，所述微器件还包括用来保护微器件内部元件的保护层104，所述保护层104包裹在所述第一半导体层101或第二半导体层103的外侧面。
具体的，所述第一半导体层为N型半导体层，所述第二半导体层为P型半导体层，所述第一电极为N电极，所述第二电极为P电极；当然可以想到的是，所述第一半导体层也可以为P型半导体层，所述第二半导体层为N型半导体层，第一电极为P电极，所述第二电极为N电极，只要符合相应型的半导体层与相应电极匹配即可。
通过在微器件的外侧包裹一层光集中层200，并至少包裹在多量子阱层102的外侧面，当多量子阱层102发出的光线从两侧照射到光集中层200之后，光线将会依据设定的反射角进行反射，使得发出的光线集中向上下射出，光源发出的光线变得集中，并且相邻的微器件之间发出的光线不会互相干扰，发光效果不受影响，从而提高了微器件的发光效率。
需要说明的是，所述的第一半导体层101可以在纯半导体材料中，如氮化镓(GaN)中掺杂五价元素，如磷，形成上述第一半导体层101。在第一半导体层101中，自由电子为多子，空穴位少子，主要靠自由电子导电。多子(自由电子)的浓度越高，第一半导体层101的导电性能越强；同理，所述第二半导体层103可以在纯半导体材料中，如氮化镓(GaN)中掺杂三价元素，如硼，形成第二半导体层103，在第二半导体层103中，空穴为多子，自由电子为少子，主要靠空穴导电，多子(空穴)的浓度越高，第二半导体层103的导电性越强。作为进一步的方案，所述光集中层200还包裹在所述第一半导体层101和多量子阱层102的外侧面，包括透明层201和反射层202，所述透明层201形成于所述微器件的外侧并包裹在第一半导体层101和多量子阱层102的外侧面，所述反射层202形成于透明层201上并完全覆盖所述透明层201远离所述微器件的一侧。在另外一种实现方式中，所述光集中层200还可以包裹在所述第二半导体层103和多量子阱层102的外侧面，相应的透明层201也同时包裹在所述第二半导体层103和多量子阱层102的外侧面，所述反射层202同样完全覆盖透明层201远离所述微器件的一侧。
举例来说，当第一半导体层101在下，多量子阱层102在中间，第二半导体层103在上时，将透明层201和反射层202覆盖在第一半导体层101和多量子阱层102的外侧面，使得光线集中向上发出，同理，将透明层201和反射层202覆盖在第二半导体层103和多量子阱层102的外侧面，使得光线集中向下发出，当然可以想到的是，所述第一半导体层101和第二半导体层103设置位置可以是第一半导体层101在上第二半导体层103下，也可以是第一半导体层101在下第二半导体层103在上，上述只是举例说明，本发明不做具体限定。
作为更进一步的方案，所述光集中层200还包裹在所述第一半导体层101、多量子阱层102以及第二半导体层103的外侧面，所述透明层201包裹在所述第一半导体层101、多量子阱层102以及第二半导体层103的外侧面，所述反射层202形成于透明层201上并完全覆盖所述透明层201远离所述微器件的一侧，当需要更加集中的光源时可将透明层201以及反射层202覆盖在第一半导体层101、多量子阱层102以及第二半导体层103的外侧面，此时的第一半导体层101和第二半导体层103得到完全覆盖，在多量子阱层发出的光线只能朝着预开口的方向射出，得到更加集中的光线。
其中，光集中层200中的透明层201用于透过光线到反射层202，反射层202将光线通过一定角度反射出去。基于大部分能达到光反射目的的材料一般皆为金属材料，但是金属材料一般皆为导体,导体若直接与半导体接触会造成微器件短路的现象，因此本实施例将反射层202与半导体用透明层201隔开，而透明的材质一般都为绝缘体，透明的绝缘体可以防止反射层202与半导体层短路、又避免了光效能消耗过多，从而达到需要的光反射效果。作为另一种实施例，该光集中层200可以为单独设置的一层，即其并不区分为透明层201和反射层202，但若光集中层200为单独设置的一层，其应当同时具有反射和绝缘的作用，以使得即可以将光线集中反射，又可以良好地避免短路问题。
作为进一步的方案，所述透明层201通过化学气相沉积涂覆在所述微器件外侧，所述反射层202通过物理气相沉积涂覆在所述透明层201上，当然可以想到的是，对于透明层201和反射层202的涂覆位置可以根据实际使用中微器件所需的发光方向进行调整。
请参见图5a和图5b，图5a是本发明中一种微器件向上出光时的工作示意图，图 5b是本发明中一种微器件向下出光时的工作示意图。可视产品需求出光方向将透明层和反射层针对需求方向进行涂覆，例如，当第一半导体层101在下，多量子阱层102在中间，第二半导体层103在上时，如图5a所示,若需求朝上出光时则将开口方向朝上，只需将透明层201和反射层202涂覆在第一半导体层101和多量子阱层102的外侧面，使得光线集中向上发出。如图5b所示,同样当出光方向朝下时，将透明层201和反射层202涂覆在第二半导体层103和多量子阱层102的外侧面即可，使得光线集中向下发出，也就是说只要视产品的需求进而针对结构开口进行设计，来达到特殊出光方向的需求目标。或者当出光方向为上方或下方时，可将透明层201和反射层202直接涂覆在多量子阱层102外侧，以将侧面光线进行反射，避免侧面发光，使得光线集中从微器件上方和下方射出。即是说，可依据出光方向，选择性地将透明层201和反射层202涂覆在微器件的相应位置。
作为进一步的方案，所述透明层201为隔音和隔热的绝缘材料，例如SiOx,SiNx等，具体材料本发明不做限定，只要能达到隔音、隔热并且绝缘的作用即可。
作为进一步的方案，所述反射层202为金属材料，例如Al、Cr、Ag等，具体材料本发明不做限定，只要能起到对光线的反射的作用即可。
作为进一步的方案，所述反射层202的反射角形状为菱形或波浪型，需要说明的是反射层202的反射角形状并不仅仅局限于上述的菱形或波浪型，具体使用时，可依据实际需要出光的方向，需要出光的角度都可涂覆不同类型反射角的反射层202。
请参阅图6a和图6b，图6a是本发明中一种微器件的反射层的反射角为菱形时的工作原理图，图6b是本发明中一种微器件的反射层的反射角为波浪形时的工作原理图。如图6a所示，可以看到当反射角为菱形时入射的光线(箭头朝下表示入射光线)，都被反射角反射出了比较密集的反射光线(箭头朝上表示反射光线)，如图6b所示,而当反射角形状为波浪形时入射光线都被较为分散的反射出去，反射角度越小的反射出的光线越为集中，反射角度越大反射出的光线较为分散，因此可见，不同的反射角形状能对光线起到不同的反射效果，而在实际使用时可根据需要调整反射层202的涂覆工艺以改变反射角的形状，对反射角具体形状本发明不做具体限定。
作为进一步的方案，所述第一电极105和第二电极106位于同一平面，具体的电极位置可视需发光样式放置于不同位置，例如上述的微器件需向上开口发光时，第一电极105和第二电极106即放置于开口方向，同理，不同的开口位置两个电极位置也就随之改变，以便于第一电极105与相应的第一半导体层101耦接，第二电极106与相应的第二半导体层103耦接，只要能传递相应的电信号即可。
作为进一步的方案，所述多量子阱层102通过金属有机化合物化学气相沉淀形成。其中，得益于多量子阱层102的光学特性，多量子阱层102为主要的发光层结构，所述第一半导体层101与第二半导体层103在所述多量子阱层102发光，例如，当第一半导体层为N型半导体层，第二半导体层为P型半导体层时在两者连接处形成PN结，并在多量子阱层102进行发光。
基于上述的微器件，本发明还提供了一种微器件的制备方法，如图7所示，为本发明的一种微器件的制备方法的流程图。所述制备方法包括：
S1、在所述第一半导体层和第二半导体层之间设置多量子阱层；
所述第一半导体层可以在纯半导体材料中，例如氮化镓(GaN)中掺杂五价元素，如磷，形成上述第一半导体层，在第一半导体层中，自由电子为多子，空穴位少子，主要靠自由电子导电，多子(自由电子)的浓度越高，第一半导体层的导电性能越强；同理，所述第二半导体层可以在纯半导体材料中，如氮化镓(GaN)中掺杂三价元素，如硼，形成第二半导体层，在第二半导体层中，空穴为多子，自由电子为少子，主要靠空穴导电。多子(空穴)的浓度越高，P型半导体的导电性越强，其中，保护层覆盖整个第二半导体层起到保护作用。
S2、将所述第一电极与所述第一半导体层耦接，所述第二电极与所述第二半导体层耦接；
将所述第一电极和第二电极同一平面设置，相对应的第一电极穿过保护层和多量子阱层与第一半导体层耦接，所述第二电极穿过保护层和第二半导体层耦接。
S3、至少在所述多量子阱层的外侧面包裹光集中层。
作为进一步的方案，所述至少在所述多量子阱层的外侧面包裹光集中层还包括：
在所述多量子阱层和第一半导体层的外侧面包裹光集中层；
或者在所述多量子阱层和第二半导体层的外侧面包裹光集中层；或者在所述多量子阱层、第一半导体层以及第二半导体层的外侧面包裹光集中层。
其中，所述光集中层包括透明层和反射层，所述第一半导体层为N型半导体层，所述第二半导体层为P型半导体层。
在具体的实施方式中，通过在所述微器件外侧也即是在所述多量子阱层的外侧面包裹光集中层；或者在所述多量子阱层和第一半导体层的外侧面包裹光集中层；或者在所述多量子阱层和第二半导体层的外侧面包裹光集中层；或者在所述多量子阱层、第一半导体层以及第二半导体层的外侧面包裹光集中层，其中所述光集中层包括透明层和反射层，反射层形成于透明层上，所述透明层为隔音和隔热的绝缘材料，反射层为金属材料，通过反射层的反射角形可有效的将微器件发出的光线进行反射，使得光源更加集中射出，当然上述的光集中层还可依据实际需求的出光方向对第一半导体层、多量子阱层以及第二半导体层分别包裹，由于上述已经对出光方向做了详细说明，故在此不做赘述了。
需要说明的是，在微器件制作过程中，先是在基底上依次覆盖第一半导体层、多量子阱层、第二半导体层和保护层，而在包裹光集中层时可包含有基底，也可根据实际情况去除基底后再包裹光集中层，去除基底对微器件的功能不产生影响，具体可视使用情况而定。
下面以本实施例的具体应用场景为例，对本发明所述的微器件及其制备方法进行更加详细的说明。
传统的Micro-LED受电流驱动后产生光，但因光为散射状态易造成后续的效能浪费，电流输入与光功率的输出不成正比，本发明中的通过设置光集中层并搭配不同的反射角设计使光源更为集中，并可搭配不同的出光方向需求将光集中层沉积于不同位置；在实际使用时，由于微器件的发光角度约为120度，因此需要在微器件的外侧包裹了一层光集中层，以使得发出的光线集中于一处射出，所述光集中层包括透明层和反射层，其中，透明层为隔音和隔热的绝缘材料，值得一提的是，大部分能达到光反射目的的材料一般皆为金属材料但金属材料一般皆为导体,导体若直接与半导体接触会造成微器件短路的 现象，因此才需要于反射层与半导体用透明层隔开，通过透明层来透过光线到反射层，反射层将光线通过一定角度反射出去，即防止了反射层与半导体层短路且又避免了光效能消耗过多，从而达到需要的光反射效果。
综上所述，本发明提供了一种微器件及其制备方法，所述微器件包括第一半导体层、多量子阱层、第二半导体层、第一电极和第二电极，所述多量子阱层设置在所述第一半导体层与第二半导体层之间，所述第一电极与第一半导体层耦接，所述第二电极与第二半导体层耦接，通过至少在所述多量子阱层的外侧面形成一层光集中层，使得微器件的出光角度缩小，限制出光方向，并且各个单色微器件之间独立发光，不会相互影响，以使得光源更集中，有效的解决了效能浪费，大大提高了发光效率。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本发明的其它实施方案。本发明旨在涵盖本发明的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本发明的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本发明的真正范围和精神由权利要求所指出。
应当理解的是，本发明并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本发明的范围仅由所附的权利要求来限制。

Claims (15)

  1. 一种微器件，其特征在于，包括第一半导体层、多量子阱层、第二半导体层、第一电极和第二电极，所述多量子阱层设置在所述第一半导体层与第二半导体层之间，所述第一电极与第一半导体层耦接，所述第二电极与第二半导体层耦接，所述微器件还包括光集中层，所述光集中层形成于所述微器件外侧并至少包裹在所述多量子阱层的外侧面。
  2. 根据权利要求1所述的微器件，其特征在于，所述光集中层还包裹在所述第一半导体层的外侧面，所述光集中层包括透明层和反射层，所述透明层包裹在所述第一半导体层和多量子阱层的外侧面，所述反射层形成于所述透明层上并完全覆盖所述透明层远离所述微器件的一侧。
  3. 根据权利要求1所述的微器件，其特征在于，所述光集中层还包裹在所述第二半导体层的外侧面，所述光集中层包括透明层和反射层，所述透明层包裹在所述第二半导体层和多量子阱层的外侧面，所述反射层形成于所述透明层上并完全覆盖所述透明层远离所述微器件的一侧。
  4. 根据权利要求1所述的微器件，其特征在于，所述光集中层还包裹在所述第一半导体层以及第二半导体层的外侧面，所述光集中层包括透明层和反射层，所述透明层包裹在所述第一半导体层、多量子阱层以及第二半导体层的外侧面，所述反射层形成于所述透明层上并完全覆盖所述透明层远离所述微器件的一侧。
  5. 根据权利要求1所述的微器件，其特征在于，所述第一半导体层为N型半导体层，所述第二半导体层为P型半导体层。
  6. 根据权利要求1所述的微器件，其特征在于，所述第一电极为N电极，所述第二电极为P电极。
  7. 根据权利要求4所述的微器件，其特征在于，所述透明层通过化学气相沉积涂覆在所述微器件外侧，所述反射层通过物理气相沉积涂覆在所述透明层上。
  8. 根据权利要求7所述的微器件，其特征在于，所述透明层为隔音和隔热的绝缘材料。
  9. 根据权利要求3所述的微器件，其特征在于，所述反射层为金属材料。
  10. 根据权利要求7所述的微器件，其特征在于，所述反射层的反射角形状为菱形或波浪型。
  11. 根据权利要求1所述的微器件，其特征在于，所述微器件还包括保护层，所述保护层包裹在所述第一半导体层或第二半导体层的外侧面。
  12. 一种微器件的制备方法，其特征在于，所述制备方法包括：
    在所述第一半导体层和第二半导体层之间设置多量子阱层；
    将所述第一电极与所述第一半导体层耦接，所述第二电极与所述第二半导体层耦接；
    至少在所述多量子阱层的外侧面包裹光集中层。
  13. 根据权利要求12所述的微器件的制备方法，其特征在于，所述至少在所述多量子阱层的外侧面包裹光集中层还包括：
    在所述多量子阱层和第一半导体层的外侧面包裹光集中层；
    或者在所述多量子阱层和第二半导体层的外侧面包裹光集中层；或者在所述多量子阱层、第一半导体层以及第二半导体层的外侧面包裹光集中层。
  14. 根据权利要求13所述的微器件的制备方法，其特征在于，所述光集中层包括透明层和反射层。
  15. 根据权利要求14所述的微器件的制备方法，其特征在于，所述第一半导体层为N型半导体层，所述第二半导体层为P型半导体层。
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