WO2021097941A1 - 显示装置及显示装置的制作方法 - Google Patents

显示装置及显示装置的制作方法 Download PDF

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Publication number
WO2021097941A1
WO2021097941A1 PCT/CN2019/123471 CN2019123471W WO2021097941A1 WO 2021097941 A1 WO2021097941 A1 WO 2021097941A1 CN 2019123471 W CN2019123471 W CN 2019123471W WO 2021097941 A1 WO2021097941 A1 WO 2021097941A1
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Prior art keywords
substrate
light emitting
emitting diode
micro light
display device
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PCT/CN2019/123471
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English (en)
French (fr)
Inventor
胡智萍
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/622,962 priority Critical patent/US20210359157A1/en
Publication of WO2021097941A1 publication Critical patent/WO2021097941A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the present invention relates to the field of display technology, and in particular to a display device and a manufacturing method of the display device.
  • LEDs light emitting diodes
  • inorganic semiconductors are widely used in solid-state light sources or backlight parts of liquid crystal display devices due to their advantages of high luminous efficiency, low cost, long life and environmental protection.
  • LEDs light emitting diodes
  • the liquid crystal display device after the light emitted by the LED is deflected by the liquid crystal, most of the light will be absorbed by the color filter, and only a small amount of light will be emitted, resulting in a light utilization rate of only 2.8%, which means that the required The brightness of the backlight needs to be more than ten times.
  • OLED Organic Light-Emitting Diode
  • MicroLED Micro Light Emitting Diode
  • the blue LED excites the quantum dot material, and in the process of energy transfer, there will inevitably be a large amount of energy loss, such as the loss of the waveguide effect of the LED itself, the light scattering effect produced by the quantum dot, and the self-absorption phenomenon of the quantum dot material itself. This causes too much light loss during the photoluminescence process, resulting in low light utilization.
  • the existing MicroLED display device has the problem of low light utilization due to excessive light loss during the photoluminescence process. Therefore, it is necessary to provide a display device and a manufacturing method of the display device to improve this defect.
  • the embodiments of the present disclosure provide a display device and a manufacturing method of the display device, which are used to solve the problem of excessive light loss in the photoluminescence process of the existing MicroLED display device and low light utilization efficiency.
  • the embodiments of the present disclosure provide a display device, including:
  • a plurality of micro light emitting diode devices arranged in an array on the array substrate;
  • the micro light emitting diode device includes a first substrate, a second substrate disposed on the first substrate, and a micro light emitting diode, and the second substrate is provided with a reflective through hole penetrating the second substrate, so The micro light emitting diode is located in the reflective through hole.
  • the cross-sectional shape of the reflective through hole is an inverted trapezoid, and the sidewall of the reflective through hole forms an oblique angle with the bottom edge of the second substrate.
  • the value of the tilt angle is between 15° and 60°.
  • the height of the second substrate in a direction perpendicular to the array substrate is greater than the height of the micro light emitting diode.
  • the micro light emitting diodes include blue micro light emitting diodes, red micro light emitting diodes, and green micro light emitting diodes.
  • the display device further includes a quantum dot film layer, the quantum dot film layer is disposed in a part of the light-reflecting through holes and covers the light-emitting diodes, and the micro light-emitting diodes include blue micro led.
  • the material of the quantum dot film layer includes a photocurable material containing quantum dots.
  • the material of the second substrate includes gold, silver or aluminum.
  • the embodiments of the present disclosure also provide a display device, including:
  • a plurality of micro light emitting diode devices arranged in an array on the array substrate;
  • the micro light emitting diode device includes a first substrate, a second substrate disposed on the first substrate, and a blue micro light emitting diode, and the second substrate is provided with a reflective through hole penetrating the second substrate ,
  • the blue micro light-emitting diode is located in the light-reflecting through hole, some of the light-reflecting through holes are provided with a quantum dot film layer, and the quantum dot film layer covers the blue micro light-emitting diode located in the through hole diode.
  • the cross-sectional shape of the reflective through hole is an inverted trapezoid, and the sidewall of the reflective through hole forms an oblique angle with the bottom edge of the second substrate.
  • the value of the tilt angle is between 15° and 60°.
  • the height of the second substrate in a direction perpendicular to the array substrate is greater than the height of the blue micro light emitting diode.
  • the quantum dot film layer includes a red quantum dot film layer and a green quantum dot film layer.
  • the material of the quantum dot film layer includes a photocurable material containing quantum dots.
  • the material of the second substrate includes gold, silver or aluminum.
  • the embodiment of the present disclosure also provides a manufacturing method of a display device, including:
  • the light-emitting diodes correspond to the light-reflecting through holes one-to-one and are located in the light-reflecting through holes;
  • the light emitting diode substrate is cut to form a single micro light emitting diode device.
  • the manufacturing method further includes:
  • a quantum dot solution is filled in the reflective through hole, and a quantum dot film layer is formed after curing, and the quantum dot film layer covers the micro light emitting diode.
  • the embodiments of the present disclosure provide a display device, including an array substrate and a micro light-emitting diode device.
  • the micro-light-emitting diode device includes a first substrate, a second substrate, and a micro-light-emitting diode.
  • a reflective through hole is provided, and the micro light emitting diode is arranged inside the reflective through hole.
  • the smooth sidewalls on both sides of the reflective through hole are used to reflect and extract light to improve the light extraction utilization rate of the micro light emitting diode.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a display device provided in the first embodiment of the disclosure
  • FIG. 2 is a schematic diagram of the cross-sectional structure of the micro light emitting diode device provided by the first embodiment of the disclosure
  • FIG. 3 is a schematic diagram of a cross-sectional structure of the display device provided in the second embodiment of the disclosure.
  • FIG. 4A is a schematic structural diagram of a second substrate provided in a third embodiment of the disclosure.
  • 4B is a schematic diagram of the structure of the first substrate provided in the third embodiment of the disclosure.
  • 4C is a schematic diagram of the structure of the first substrate provided in the third embodiment of the disclosure.
  • 4D is a schematic diagram of the structure of the light-emitting diode substrate provided in the third embodiment of the disclosure.
  • 4E is a schematic structural diagram of the micro light emitting diode device provided in the third embodiment of the disclosure.
  • 4F is a schematic diagram of the structure of the array substrate provided in the third embodiment of the disclosure.
  • 4G is a schematic diagram of the structure of the array substrate provided in the third embodiment of the disclosure.
  • the embodiments of the present disclosure provide a display device, which will be described in detail below with reference to FIG. 1 and FIG. 2.
  • FIG. 1 is a schematic cross-sectional structure diagram of a display device provided by an embodiment of the disclosure.
  • the display device 100 includes an array substrate 110 and a plurality of micro light emitting diode devices arrayed on the array substrate 110.
  • the array substrate 110 is provided with a thin film transistor and a pixel driving circuit.
  • FIG. 2 is a schematic cross-sectional structure diagram of a micro light emitting diode device provided by an embodiment of the disclosure.
  • the micro light emitting diode device includes a first substrate 121 and a second substrate 122 disposed on the first substrate 121 And the micro light emitting diode 123, a metal electrode is formed on the first substrate 121, and the micro light emitting diode 123 is connected to the metal electrode.
  • the second substrate 122 is provided with a reflective through hole 124 penetrating the second substrate 122, the micro light emitting diode 123 is located in the reflective through hole 124, and the two sidewall surfaces of the reflective through hole 124 are smooth ,
  • the light emitted by the micro light emitting diode 123 has the function of reflection and extraction.
  • the side wall of the reflective through hole 124 reflects the light diverging from the side and bottom of the micro light emitting diode 123 as shown by the arrow to the light emitted by the micro light emitting diode 123 Direction, so as to converge the light emitted by the micro light emitting diode 123, and improve the light extraction efficiency of the micro light emitting diode 123.
  • the cross-sectional shape of the light-reflecting through hole 124 is an inverted trapezoid, the sidewall of the light-emitting through hole 124 and the bottom edge of the second substrate 122 form an oblique angle a, and the side with an oblique angle a
  • the wall can reflect the light emitted by the micro light emitting diode 123 to the light emitting direction, thereby improving the light extraction efficiency of the micro light emitting diode 123.
  • the value of the inclination angle a is between 15° and 60°.
  • the material of the first substrate 121 includes a ceramic material
  • the material of the metal electrode may include a metal material with good conductivity such as silver, aluminum, or copper.
  • the micro light emitting diode 123 includes a blue micro light emitting diode, a red micro light emitting diode, and a green micro light emitting diode, so as to realize the full-color display of the display device 100.
  • the arrangement of the micro light-emitting diodes of each color can be arranged according to the arrangement of the sub-pixel regions of the display device, which is not limited here.
  • the height of the second base 122 in the direction perpendicular to the array substrate 110 is greater than the height of the micro light-emitting diode 123 in the direction perpendicular to the array substrate 110, so that The micro light emitting diode 123 is confined inside the light reflecting through hole 124 to improve the reflection and extraction effect of the light reflecting through hole 124 on the light of the micro light emitting diode 123.
  • the second substrate 122 can also serve as a barrier between adjacent micro light emitting diodes 123, which can reduce crosstalk of light emitted between adjacent micro light emitting diodes of different colors, and improve the display effect of the display device 100.
  • the second substrate may be selected from metal materials with high reflectivity such as gold, silver, or aluminum.
  • the second substrate 122 can also be selected from other non-metallic materials with higher reflectivity and opacity, which is not limited here.
  • the embodiments of the present disclosure provide a display device 100, including an array substrate 110 and a micro-light-emitting diode device, the micro-light-emitting diode device including a first substrate 121, a second substrate 122, and a micro-light-emitting diode 123 ,
  • the smooth sidewalls on both sides of the reflective through hole 124 are used to reflect and extract light to improve The light extraction utilization rate of the micro light emitting diode 123.
  • the embodiments of the present disclosure provide a display device, which will be described in detail below with reference to FIG. 3.
  • FIG. 3 is a schematic cross-sectional structure diagram of a display device 200 provided by an embodiment of the disclosure.
  • the display device 200 includes an array substrate 210 and a plurality of micro light emitting diode devices arrayed on the array substrate 210. .
  • the micro light emitting diode device includes a first substrate 221, a second substrate 222 disposed on the first substrate 221, and a micro light emitting diode 223.
  • the first substrate 221 is formed with a metal electrode, and the micro light emitting diode 223 Connect with the metal electrode.
  • the second substrate 222 is provided with a reflective through hole 224 penetrating the second substrate 222, the micro light emitting diode 223 is located in the reflective through hole 224, and the two sidewall surfaces of the reflective through hole 224 are smooth ,
  • the light emitted by the micro light emitting diode 223 has the function of reflection and extraction.
  • the side wall of the reflective through hole 224 reflects the light diverging from the side and bottom of the micro light emitting diode 223 as shown by the arrow to the light emitted by the micro light emitting diode 223. In this way, the light emitted by the micro light emitting diode 223 is concentrated, and the light extraction efficiency of the micro light emitting diode 223 is improved.
  • the cross-sectional shape of the light-reflecting through hole 224 is an inverted trapezoid
  • the sidewall of the light-emitting through hole 224 and the bottom edge of the second substrate 222 form an oblique angle a
  • the side with an oblique angle a The wall can reflect the light emitted by the micro light emitting diode 223 to the light emitting direction, thereby improving the light extraction efficiency of the micro light emitting diode 223.
  • the value of the inclination angle a is between 15° and 60°.
  • the display device 200 further includes a quantum dot film layer, the quantum dot film layer is disposed in a part of the light-reflecting through holes 224 and covers the micro-dots located in the light-reflecting through holes 224.
  • the micro light emitting diodes 223 are all blue micro light emitting diodes
  • the quantum dot film layer includes a red quantum dot film layer 231 and a green quantum dot film layer 232, and the red quantum dot film layer 231 and the lower one
  • the micro-light-emitting diode corresponds to the red sub-pixel area of the array substrate 210
  • the green quantum dot film 232 and the micro-light-emitting diode below it correspond to the green sub-pixel area of the array substrate 210, and are blue micro-luminescence covering the quantum dot film.
  • the diode corresponds to the blue sub-pixel area, and the full-color display of the display device 200 is realized through the conversion of the light emitted by the blue micro-light-emitting diode by the corresponding quantum dot film layer.
  • the material of the quantum dot film layer includes a photocurable material containing quantum dots.
  • the height of the second base 222 in the direction perpendicular to the array substrate 210 is greater than the height of the micro light emitting diode 223 in the direction perpendicular to the array substrate 210, and at the same time Should be higher than the height of the quantum dot film layer, so that the micro light emitting diode 223 and the quantum dot film layer are confined inside the reflective through hole 224, and the sidewalls with an inclination angle reflect the light emission of the quantum dots in the quantum dot film layer. The effect is to improve the reflection and extraction effect of the light reflecting through hole 224 on the light of the micro light emitting diode 223.
  • the second substrate 222 can also be used as a barrier between adjacent micro-light-emitting diodes 223 and adjacent quantum dot film layers, which can reduce light generation between adjacent micro-light-emitting diodes 223 and adjacent quantum dot film layers of different colors.
  • Crosstalk improves the display effect of the display device 200.
  • the second substrate 222 may be selected from metal materials with high reflectivity such as gold, silver or aluminum.
  • the second substrate 222 can also be selected from other non-metallic materials with high reflectivity and opacity, which is not limited here.
  • the embodiments of the present disclosure provide a display device 200, which includes an array substrate 210 and a micro light emitting diode device, the micro light emitting diode device includes a first substrate 221, a second substrate 222, and a micro light emitting diode 223
  • the second substrate 222 is provided with a reflective through hole 224
  • the micro light-emitting diode 223 is disposed inside the reflective through hole 224, and the smooth sidewalls on both sides of the reflective through hole 224 are used to reflect and extract light to improve The light extraction utilization rate of the micro light emitting diode 223.
  • FIG. 4A is a schematic diagram of the structure of the second substrate
  • FIG. 4B to FIG. 4C are schematic diagrams of the structure of the first substrate
  • FIG. 4D 4E are schematic diagrams of the structure of the light emitting diode substrate
  • FIGS. 4F to 4G are schematic diagrams of the structure of the array substrate.
  • Step S10 As shown in FIG. 4A, a second substrate 320 is provided, and a plurality of through holes are continuously arranged on the second substrate 320;
  • Step S20 sanding and polishing the through hole to form a reflective through hole 321 with smooth sidewalls on both sides and a certain inclination angle;
  • Step S30 As shown in FIG. 4B, a first substrate 310 is provided, and a metal electrode 311 is formed on the first substrate 310;
  • Step S30 As shown in FIG. 4C, a micro light emitting diode 330 is provided, the micro light emitting diode 330 is transferred to the first substrate 310, and the micro light emitting diode 330 and the metal electrode 311 are welded;
  • Step S40 As shown in FIG. 4D, the first substrate 310 and the second substrate 320 are bonded by curing glue to form a light emitting diode substrate, and the micro light emitting diode 330 and the reflective through hole 322 are one by one. Corresponding, and located in the reflective through hole 322;
  • Step S50 As shown in FIG. 4E, the light emitting diode substrate is cut to form a single micro light emitting diode device 340.
  • the method of forming the through hole 321 includes methods such as mechanical punching, hot pressing, or air pressure.
  • the two sidewall surfaces of the reflective through hole 322 are smooth, which has the function of reflecting and extracting the light emitted by the micro light emitting diode 330.
  • the sidewall of the reflective through hole 322 aligns the light emitting diode 330 side The light diverging from the side and the bottom is reflected to the light emitting direction of the micro light emitting diode 330, thereby converging the light emitted by the micro light emitting diode 330, and improving the light extraction efficiency of the micro light emitting diode 330.
  • the value of the tilt angle is between 15° and 60°.
  • the second substrate 320 is selected from a metal material with high reflectivity such as gold, silver or aluminum, which is also beneficial to improve the reflection effect of the reflective through hole 322.
  • the manufacturing method further includes:
  • Step S60 As shown in FIG. 4F, an array substrate 350 is provided, and a pixel driving circuit is provided on the array substrate 350, and the micro light emitting diode device 340 is transferred to the array substrate 350;
  • Step S70 As shown in FIG. 4G, a quantum dot solution is filled in the reflective through hole 322 by inkjet printing, and a quantum dot film layer is formed after curing, and the quantum dot film layer covers the micro light emitting diode device 340 .
  • the micro light emitting diode 330 is a blue micro light emitting diode.
  • the micro light emitting diodes in the sub-pixel areas of different colors are covered with a quantum dot film layer of the same color as the sub-pixel area, and the quantum dot film is used The layer serves as the light conversion layer to realize the full-color display of the display device.
  • the micro light emitting diode 330 may also include blue micro light emitting diodes, red micro light emitting diodes, and green micro light emitting diodes.
  • the full color display of the display device is realized by the combination of three color micro light emitting diodes.
  • the quantum dot film layer described in this embodiment is not required.
  • the embodiments of the present disclosure provide a method for manufacturing a display device, by forming a continuous arrangement of reflective through holes 322 with smooth sidewalls on the second substrate 320, and disposing the micro light emitting diodes 330 on the In the reflective through hole 322, the light reflection and extraction effect of the smooth side walls on both sides of the reflective through hole 322 is used to improve the light extraction utilization rate of the micro light emitting diode 330.

Abstract

本揭示提供一种显示装置及显示装置的制作方法，所述显示装置包括阵列基板和多个微发光二极管器件，微发光二极管器件阵列排布于所述阵列基板上，包括第一基底、设置于基底上的第二基底和微发光二极管，通过在第二基底上设置有反光通孔，并将微发光二极管设置于所述反光通孔内部，提高微发光二极管的光提取利用率。

Description

显示装置及显示装置的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种显示装置及显示装置的制作方法。
 背景技术
目前，基于无机半导体的发光二极管（Light Emitting Diode, LED）因其发光效率高、成本低、寿命长及环保性等优点，被广泛应用于固态光源或液晶显示装置的背光部分。在液晶显示装置中，LED发出的光线在经过液晶的偏转后，大部分光线会被彩色滤光片吸收掉，只有少量光线出射，导致光的利用率仅有2.8%，这意味着所需的背光的亮度需要超过十倍。
 技术问题
为提高光利用率，降低功耗成本，多种新型的有源显示技术应运而生，如有机发光二极管（Organic Light-Emitting Diode, OLED）和微发光二极管（Micro Light Emitting Diode, MicroLED）。与OLED相比，MicroLED具有材料稳定性的优势，在亮度及寿命方面的表现也更突出。但对于MicroLED而言，实现全彩化的方案有两种，一种是将大量的红绿蓝三种颜色的微型LED转移到相应位置；另一种是只转移蓝光LED，红色和绿色像素则采用量子点搭配蓝光LED。然而蓝光LED激发量子点材料，在能量转移的过程中，不可避免会存在大量的能量损失，如LED自身波导效应损失，量子点产生的光散射效应等，以及量子点材料自身的自吸收现象，使得光致光发光过程中的光损失过多，导致光的利用率不高。
综上所述，现有MicroLED显示装置存在光致发光过程中光损失过多导致光利用率不高的问题。故，有必要提供一种显示装置及显示装置的制作方法来改善这一缺陷。
 技术解决方案
本揭示实施例提供一种显示装置及显示装置的制作方法，用于解决现有MicroLED显示装置存在光致发光过程中光损失过多导致光利用率不高的问题。
本揭示实施例提供一种显示装置，包括：
阵列基板；以及
多个微发光二极管器件，阵列排布于所述阵列基板上；
其中，所述微发光二极管器件包括第一基底、设置于所述第一基底上的第二基底和微发光二极管，所述第二基底上设有贯穿所述第二基底的反光通孔，所述微发光二极管位于所述反光通孔内。
根据本揭示一实施例，所述反光通孔的截面形状为倒置梯形，所述反光通孔的侧壁与所述第二基底的底边形成倾斜角。
根据本揭示一实施例，所述倾斜角的值介于15°和60°之间。
根据本揭示一实施例，所述第二基底在垂直于所述阵列基板的方向上的高度大于所述微发光二极管的高度。
根据本揭示一实施例，所述微发光二极管包括蓝色微发光二极管、红色微发光二极管和绿色微发光二极管。
根据本揭示一实施例，所述显示装置还包括量子点膜层，所述量子点膜层设置于部分所述反光通孔内，并覆盖所述发光二极管，所述微发光二极管包括蓝色微发光二极管。
根据本揭示一实施例，所述量子点膜层的材料包括含有量子点的光固化性材料。
根据本揭示一实施例，所述第二基底的材料包括金、银或铝。
本揭示实施例还提供一种显示装置，包括：
阵列基板；以及
多个微发光二极管器件，阵列排布于所述阵列基板上；
其中，所述微发光二极管器件包括第一基底、设置于所述第一基底上的第二基底和蓝色微发光二极管，所述第二基底上设有贯穿所述第二基底的反光通孔，所述蓝色微发光二极管位于所述反光通孔内，部分所述反光通孔内设有量子点膜层，所述量子点膜层覆盖位于所述通孔内的所述蓝色微发光二极管。
根据本揭示一实施例，所述反光通孔的截面形状为倒置梯形，所述反光通孔的侧壁与所述第二基底的底边形成倾斜角。
根据本揭示一实施例，所述倾斜角的值介于15°和60°之间。
根据本揭示一实施例，所述第二基底在垂直于所述阵列基板的方向上的高度大于所述蓝色微发光二极管的高度。
根据本揭示一实施例，所述量子点膜层包括红色量子点膜层和绿色量子点膜层。
根据本揭示一实施例，所述量子点膜层的材料包括含有量子点的光固化性材料。
根据本揭示一实施例，所述第二基底的材料包括金、银或铝。
本揭示实施例还提供一种显示装置的制作方法，包括：
提供第二基底，在所述第二基底上形成连续排布的多个通孔；
对所述通孔进行磨砂并抛光，形成反光通孔；
提供第一基底，在所述第一基底上形成金属电极；
提供微发光二极管，将所述微发光二极管转移至所述第一基底上；
将所述第二基底与所述第一基底贴合，形成发光二极管基板，所述发光二极管与所述反光通孔一一对应，并位于所述反光通孔内；以及
切割所述发光二极管基板，形成单个微发光二极管器件。
根据本揭示一实施例，所述制作方法还包括：
提供阵列基板，将所述微发光二极管器件转移至所述阵列基板上；以及
在所述反光通孔内填充量子点溶液，固化后形成量子点膜层，所述量子点膜层覆盖所述微发光二极管。
 有益效果
本揭示的有益效果：本揭示实施例提供一种显示装置，包括阵列基板和微发光二极管器件，所述微发光二极管器件包括第一基底、第二基底和微发光二极管，通过在第二基底上设置有反光通孔，并将微发光二极管设置于所述反光通孔内部，利用反光通孔两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管的光提取利用率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本揭示实施例一提供的显示装置的截面结构示意图；
图2为本揭示实施例一提供的微发光二极管器件的截面结构示意图；
图3为本揭示实施例二提供的显示装置的截面结构示意图；
图4A为本揭示实施例三提供的第二基板的结构示意图；
图4B为本揭示实施例三提供的第一基板的结构示意图；
图4C为本揭示实施例三提供的第一基板的结构示意图；
图4D为本揭示实施例三提供的发光二极管基板的结构示意图；
图4E为本揭示实施例三提供的微发光二极管器件的结构示意图；
图4F为本揭示实施例三提供的阵列基板的结构示意图；
图4G为本揭示实施例三提供的阵列基板的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
下面结合附图和具体实施例对本揭示做进一步的说明：
实施例一：
本揭示实施例提供一种显示装置，下面结合图1和图2进行详细说明。
如图1所示，图1为本揭示实施例提供的显示装置的截面结构示意图，所述显示装置100包括阵列基板110和阵列排布于所述阵列基板110上的多个微发光二极管器件，所述阵列基板110上设有薄膜晶体管以及像素驱动电路。
如图2所示，图2为本揭示实施例提供的微发光二极管器件的截面结构示意图，所述微发光二极管器件包括第一基底121、设置于所述第一基底121上的第二基底122和微发光二极管123，所述第一基底121上形成有金属电极，所述微发光二极管123与所述金属电极连接。所述第二基底122上设有贯穿所述第二基底122的反光通孔124，所述微发光二极管123位于所述反光通孔124内，所述反光通孔124的两个侧壁表面光滑，对于微发光二极管123发射的光具有反射提取的作用，所述反光通孔124的侧壁将微发光二极管123如箭头所示的侧边以及底边发散的光线反射至微发光二极管123的出光方向，从而将微发光二极管123发出的光线进行了汇聚，提高微发光二极管123的光提取效率。
在本揭示实施例中，所述反光通孔124的截面形状为倒置梯形，所述发光通孔124的侧壁与所述第二基底122的底边形成倾斜角a，具有倾斜角a的侧壁能够将微发光二极管123发散的光线反射至出光方向，提高微发光二极管123的光提取效率。
优选的，为保证反射效果的同时不影响出光视角，所述倾斜角a的值介于15°和60°之间。
优选的，所述第一基底121的材料包括陶瓷材料，所述金属电极的材料可以包括银、铝或铜等导电性较好的金属材料。
在本揭示实施例中，所述微发光二极管123包括蓝色微发光二极管、红色微发光二极管和绿色微发光二极管，以此实现显示装置100的全彩化显示。其中，各个颜色的所述微发光二极管的排布方式可根据显示装置的子像素区域的排布方式进行排布，此处不做限制。
在本揭示实施例中，所述第二基底122在垂直于所述阵列基板110的方向上的高度要大于所述微发光二极管123在垂直于所述阵列基板110的方向上的高度，以便将微发光二极管123限制在所述反光通孔124内部，提高反光通孔124对微发光二极管123光线的反射提取作用。同时，第二基底122还可以作为相邻微发光二极管123之间的挡墙，能够减少相邻不同颜色微发光二极管之间发出的光线发生串扰，提高显示装置100的显示效果。
优选的，为保证所述反光通孔124的反射效果以及所述第二基底122作为挡墙的光线阻挡作用，所述第二基底可以选用金、银或铝等反射率较高的金属材料。当然，在一些实施例中，所述第二基底122也可以选用其他反射率较高且不透光的非金属材料，此处不做限制。
本揭示实施例的有益效果：本揭示实施例提供一种显示装置100，包括阵列基板110和微发光二极管器件，所述微发光二极管器件包括第一基底121、第二基底122和微发光二极管123，通过在第二基底122上设置有反光通孔124，并将微发光二极管123设置于所述反光通孔124内部，利用反光通孔124两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管123的光提取利用率。
实施例二：
本揭示实施例提供一种显示装置，下面结合图3进行详细说明。
如图3所示，图3为本揭示实施例提供的显示装置200的截面结构示意图，所述显示装置200包括阵列基板210和阵列排布于所述阵列基板210上的多个微发光二极管器件。
所述微发光二极管器件包括第一基底221、设置于所述第一基底221上的第二基底222和微发光二极管223，所述第一基底221上形成有金属电极，所述微发光二极管223与所述金属电极连接。所述第二基底222上设有贯穿所述第二基底222的反光通孔224，所述微发光二极管223位于所述反光通孔224内，所述反光通孔224的两个侧壁表面光滑，对于微发光二极管223发射的光具有反射提取的作用，所述反光通孔224的侧壁将微发光二极管223如箭头所示的侧边以及底边发散的光线反射至微发光二极管223的出光方向，从而将微发光二极管223发出的光线进行了汇聚，提高微发光二极管223的光提取效率。
在本揭示实施例中，所述反光通孔224的截面形状为倒置梯形，所述发光通孔224的侧壁与所述第二基底222的底边形成倾斜角a，具有倾斜角a的侧壁能够将微发光二极管223发散的光线反射至出光方向，提高微发光二极管223的光提取效率。
优选的，为保证反射效果的同时不影响出光视角，所述倾斜角a的值介于15°和60°之间。
在本揭示实施例中，所述显示装置200还包括量子点膜层，所述量子点膜层设置于部分所述反光通孔224内，并覆盖位于所述反光通孔224内的所述微发光二极管223。其中，所述微发光二极管223均为蓝色微发光二极管，所述量子点膜层包括红色量子点膜层231和绿色量子点膜层232，所述红色量子点膜层231和位于其下方的微发光二极管对应阵列基板210的红色子像素区域，所述绿色量子点膜层232和位于其下方的微发光二极管对应阵列基板210的绿色子像素区域，为覆盖量子点膜层的蓝色微发光二极管对应蓝色子像素区域，通过相应量子点膜层对蓝色微发光二极管发出光线的转换，实现显示装置200的全彩化显示。
优选的，所述量子点膜层的材料包括含有量子点的光固化性材料。
在本揭示实施例中，所述第二基底222在垂直于所述阵列基板210的方向上的高度要大于所述微发光二极管223在垂直于所述阵列基板210的方向上的高度，同时还应高于量子点膜层的高度，从而将微发光二极管223和量子点膜层限制在所述反光通孔224内部，具有倾斜角的侧壁对量子点膜层中量子点的光线发射具有反射作用，提高反光通孔224对微发光二极管223光线的反射提取作用。同时，第二基底222还可以作为相邻微发光二极管223和相邻量子点膜层之间的挡墙，能够减少相邻微发光二极管223以及相邻不同颜色量子点膜层之间的光线发生串扰，提高显示装置200的显示效果。
优选的，为保证所述反光通孔224的反射效果以及所述第二基底222作为挡墙的光线阻挡作用，所述第二基底222可以选用金、银或铝等反射率较高的金属材料。当然，在一些实施例中，所述第二基底222也可以选用其他反射率较高且不透光的非金属材料，此处不做限制。
本揭示实施例的有益效果：本揭示实施例提供一种显示装置200，包括阵列基板210和微发光二极管器件，所述微发光二极管器件包括第一基底221、第二基底222和微发光二极管223，通过在第二基底222上设置有反光通孔224，并将微发光二极管223设置于所述反光通孔224内部，利用反光通孔224两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管223的光提取利用率。
实施例三：
本揭示实施例提供一种显示装置的制作方法，下面结合图4A至图4G进行详细说明，其中图4A为第二基板的结构示意图，图4B至图4C为第一基板的结构示意图，图4D至图4E为发光二极管基板的结构示意图，图4F至图4G为阵列基板的结构示意图。
本揭示实施例提供的显示装置的制作方法包括：
步骤S10：如图4A所示，提供第二基底320，在所述第二基底320上形成连续排布的多个通孔；
步骤S20：对所述通孔进行磨砂并抛光，形成两侧侧壁光滑，且具有一定倾斜角度的反光通孔321；
步骤S30：如图4B所示，提供第一基底310，在所述第一基底310上形成金属电极311；
步骤S30：如图4C所示，提供微发光二极管330，将所述微发光二极管330转移至所述第一基底310上，并将所述微发光二极管330与所述金属电极311进行焊接；
步骤S40：如图4D所示，将所述第一基底310与所述第二基底320通过固化胶进行贴合，形成发光二极管基板，所述微发光二极管330与所述反光通孔322一一对应，并位于所述反光通孔322内；
步骤S50：如图4E所示，切割所述发光二极管基板，形成单个微发光二极管器件340。
在本揭示实施例中，所述步骤S10中，形成所述通孔321的方法包括机械冲压、热压或气压等方法。
在本揭示实施例中，所述反光通孔322的两个侧壁表面光滑，对于微发光二极管330发射的光具有反射提取的作用，所述反光通孔322的侧壁将微发光二极管330侧边以及底边发散的光线反射至微发光二极管330的出光方向，从而将微发光二极管330发出的光线进行了汇聚，提高微发光二极管330的光提取效率。
优选的，为保证反射效果，并且不影响出光视角，所述倾斜角的值介于15°和60°之间。同时，所述第二基底320选用金、银或铝等反射率较高的金属材料，也有利于提高反光通孔322的反射效果。
在本揭示实施例中，所述制作方法还包括：
步骤S60：如图4F所示，提供阵列基板350，所述阵列基板350上设有像素驱动电路，将所述微发光二极管器件340转移至阵列基板350上；
步骤S70：如图4G所示，通过喷墨打印的方法在所述反光通孔322内填充量子点溶液，固化后形成量子点膜层，所述量子点膜层覆盖所述微发光二极管器件340。
在本揭示实施例中，所述微发光二极管330为蓝色微发光二极管，通过在不同颜色子像素区域中的微发光二极管上覆盖与子像素区域颜色相同的量子点膜层，利用量子点膜层作为光转换层，实现显示装置的全彩化显示。当然，在一些实施例中，所述微发光二极管330也可以包括蓝色微发光二极管、红色微发光二极管和绿色微发光二极管，通过三色微发光二极管的组合方式实现显示装置的全彩化显示，并且无需本实施例所述的量子点膜层。
本揭示实施例的有益效果：本揭示实施例提供一种显示装置的制作方法，通过在第二基板320上形成连续排布并且侧壁光滑的反光通孔322，并将微发光二极管330设置于所述反光通孔322内，利用反光通孔322两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管330的光提取利用率。
综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。

Claims (17)

  1. 一种显示装置，包括：
    阵列基板；以及
    多个微发光二极管器件，阵列排布于所述阵列基板上；
    其中，所述微发光二极管器件包括第一基底、设置于所述第一基底上的第二基底和微发光二极管，所述第二基底上设有贯穿所述第二基底的反光通孔，所述微发光二极管位于所述反光通孔内。
  2. 如权利要求1所述的显示装置，其中，所述反光通孔的截面形状为倒置梯形，所述反光通孔的侧壁与所述第二基底的底边形成倾斜角。
  3. 如权利要求2所述的显示装置，其中，所述倾斜角的值介于15°和60°之间。
  4. 如权利要求1所述的显示装置，其中，所述第二基底在垂直于所述阵列基板的方向上的高度大于所述微发光二极管的高度。
  5. 如权利要求1所述的显示装置，其中，所述微发光二极管包括蓝色微发光二极管、红色微发光二极管和绿色微发光二极管。
  6. 如权利要求1所述的显示装置，其中，所述显示装置还包括量子点膜层，所述量子点膜层设置于部分所述反光通孔内，并覆盖所述发光二极管，所述微发光二极管包括蓝色微发光二极管。
  7. 如权利要求6所述的显示装置，其中，所述量子点膜层的材料包括含有量子点的光固化性材料。
  8. 如权利要求1所述的显示装置，其中，所述第二基底的材料包括金、银或铝。
  9. 一种显示装置，包括：
    阵列基板；以及
    多个微发光二极管器件，阵列排布于所述阵列基板上；
    其中，所述微发光二极管器件包括第一基底、设置于所述第一基底上的第二基底和蓝色微发光二极管，所述第二基底上设有贯穿所述第二基底的反光通孔，所述蓝色微发光二极管位于所述反光通孔内，部分所述反光通孔内设有量子点膜层，所述量子点膜层覆盖位于所述通孔内的所述蓝色微发光二极管。
  10. 如权利要求9所述的显示装置，其中，所述反光通孔的截面形状为倒置梯形，所述反光通孔的侧壁与所述第二基底的底边形成倾斜角。
  11. 如权利要求10所述的显示装置，其中，所述倾斜角的值介于15°和60°之间。
  12. 如权利要求9所述的显示装置，其中，所述第二基底在垂直于所述阵列基板的方向上的高度大于所述蓝色微发光二极管的高度。
  13. 如权利要求9所述的显示装置，其中，所述量子点膜层包括红色量子点膜层和绿色量子点膜层。
  14. 如权利要求13所述的显示装置，其中，所述量子点膜层的材料包括含有量子点的光固化性材料。
  15. 如权利要求9所述的显示装置，其中，所述第二基底的材料包括金、银或铝。
  16. 一种显示装置的制作方法，包括：
    提供第二基底，在所述第二基底上形成连续排布的多个通孔；
    对所述通孔进行磨砂并抛光，形成反光通孔；
    提供第一基底，在所述第一基底上形成金属电极；
    提供微发光二极管，将所述微发光二极管转移至所述第一基底上；
    将所述第二基底与所述第一基底贴合，形成发光二极管基板，所述发光二极管与所述反光通孔一一对应，并位于所述反光通孔内；以及
    切割所述发光二极管基板，形成单个微发光二极管器件。
  17. 如权利要求16所述的制作方法，其中，所述制作方法还包括：
    提供阵列基板，将所述微发光二极管器件转移至所述阵列基板上；以及
    在所述反光通孔内填充量子点溶液，固化后形成量子点膜层，所述量子点膜层覆盖所述微发光二极管。
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