WO2021008438A1 - 光电设备及其制备方法、光电设备的组件 - Google Patents
光电设备及其制备方法、光电设备的组件 Download PDFInfo
- Publication number
- WO2021008438A1 WO2021008438A1 PCT/CN2020/101114 CN2020101114W WO2021008438A1 WO 2021008438 A1 WO2021008438 A1 WO 2021008438A1 CN 2020101114 W CN2020101114 W CN 2020101114W WO 2021008438 A1 WO2021008438 A1 WO 2021008438A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- emitting diode
- substrate
- optoelectronic device
- photoluminescent material
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 169
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 230000000903 blocking effect Effects 0.000 claims description 50
- 230000004888 barrier function Effects 0.000 claims description 35
- 239000002096 quantum dot Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 19
- 230000005284 excitation Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 4
- 238000005424 photoluminescence Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 126
- 238000010586 diagram Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/35—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being liquid crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Definitions
- This application relates to the technical field of optoelectronic devices, and in particular to optoelectronic devices and their preparation methods, and components of optoelectronic devices.
- Display devices based on traditional LEDs such as LCD, Mini-LED, and micro-LED display technologies, are prepared by setting a filter layer or light conversion layer on the traditional LED. .
- LED display devices based on quantum dots are all formed by stacking quantum dots on top of blue LED chips. Its advantages are the display advantages of quantum dots and the high yield of a single blue chip, but the disadvantages are also obvious.
- the emission of red or green light must have the effect that the blue light emitted by the chip is "fully absorbed" by the quantum dots.
- the traditional quantum dot LED device is a top-emitting structure, in order to make blue light absorbed by the quantum dot layer, there must be a sufficiently thick quantum dot layer, which leads to an increase in the amount of quantum dots, an increase in cost, and poor packaging effects. And self-absorption leads to problems such as reduced luminous efficiency.
- an object of the present application is to provide a photoelectric device and a preparation method thereof, which can reduce or avoid the excitation light from being emitted through the photoluminescent material layer, thereby helping to improve the color purity of the emitted light.
- an optoelectronic device including:
- the plurality of light-emitting diodes are arranged on the surface of the substrate, each of the light-emitting diodes is spaced apart from each other, the plurality of light-emitting diodes include at least a first light-emitting diode, and the first light-emitting diode has a hollow structure, so that the first light-emitting diode An accommodating cavity is formed in the accommodating cavity, the accommodating cavity has an opening, and the first light emitted by the first light-emitting diode is at least partially emitted into the accommodating cavity; and
- the photoluminescent material layer provided in the receiving cavity of the first light emitting diode, the light emitted by the photoluminescent material layer being excited by the first light is adapted to pass through the opening of the receiving cavity in a direction away from the substrate Projected.
- the plurality of light-emitting diodes further includes a second light-emitting diode, and the top of the second light-emitting diode is adapted to emit light in a direction away from the substrate.
- the photoluminescent material of the photoluminescent material layer is a quantum dot material.
- the quantum dot material is dispersed in a resin, and the resin in which the quantum dot material is dispersed is filled in the containing cavity.
- the distance from the top of the second light emitting diode to the substrate is greater than the distance from the top of the first light emitting diode to the substrate.
- the photoluminescent material layer further covers the opening of the receiving cavity and the top of the first light emitting diode, so that the height of the photoluminescent material layer relative to the substrate is greater than the height of the receiving cavity.
- the optoelectronic device further includes a light blocking layer, the light blocking layer fills the gaps between the light emitting diodes and covers the top of the first light emitting diode, and the light blocking layer is opposite to the The height of the substrate is greater than the height of each of the light-emitting diodes, the light blocking layer has a first light window at a position opposite to the opening of the accommodating cavity, and the light emitted by the photoluminescent material layer is suitable for passing through the first light window.
- the light blocking layer has a second light window at a position opposite to the top of the second light emitting diode, and the light emitted by the second light emitting diode is suitable for passing through the second light window to a direction away from the substrate Projected.
- the number of the aforementioned first light emitting diodes is multiple.
- the orthographic projection of the light blocking layer on the substrate covers the orthographic projection of the top surface and the outer side surface of the first light emitting diode on the substrate.
- the orthographic projection area of the first light window on the substrate is less than or equal to the orthographic projection area of the opening on the substrate.
- a transparent barrier layer is provided outside the light barrier layer, and the transparent barrier layer covers the first light window and the second light window.
- the plurality of light emitting diodes further includes a second light emitting diode, and the plurality of light emitting diodes form a plurality of light emitting units arranged in an array, and each of the light emitting units includes at least two of the first light emitting diodes, and At least one of the above-mentioned second light-emitting diodes, in each of the above-mentioned light-emitting units:
- Each of the above-mentioned light-emitting diodes is suitable for emitting blue light, and a part of the photoluminescent material layer in the accommodating cavity of the first light-emitting diode is adapted to emit red light under the excitation of blue light, and another part is in the accommodating cavity of the first light-emitting diode
- the aforementioned photoluminescent material layer is suitable for emitting green light under blue excitation.
- a component of an optoelectronic device including:
- An accommodating cavity is formed, the accommodating cavity has an opening, and the first light emitted by the first light-emitting diode is at least partially emitted into the accommodating cavity.
- the plurality of light-emitting diodes further includes a second light-emitting diode, and the top of the second light-emitting diode is adapted to emit light in a direction away from the substrate.
- the distance from the top of the second light emitting diode to the substrate is greater than the distance from the top of the first light emitting diode to the substrate.
- an optoelectronic device including:
- step S2 the photoluminescent material dispersed in the resin glue is filled into the containing cavity by printing or screen printing and cured to form a photoluminescent material layer.
- step S3 includes the following steps:
- a beneficial effect of the present application lies in the design of the first light-emitting diode with a hollow structure: on the one hand, the inner side wall of the first light-emitting diode emits excitation light into the accommodating cavity, so that the light-emitting diode arranged in the accommodating cavity The light-emitting material is excited to generate light.
- the light-emitting direction of the photoluminescent material is restricted by the receiving cavity, and the light is emitted from the opening of the receiving cavity, and the volume of the receiving cavity is relatively large, so there is no need to be above the light-emitting diode as in the prior art Setting a very thick photoluminescent material can ensure the color purity of the light emitted from the opening, thereby facilitating the preparation of optoelectronic devices with high color expression; in addition, the first light emitting diode of the optoelectronic device has a large opening cavity for light The filling process of the luminescent material has good compatibility, the feasibility of the process is high, and the yield of the prepared device is high.
- Figure 1 is a schematic cross-sectional view of a first embodiment of the optoelectronic device of the application, in which the solid arrow represents the light emitted by the first light-emitting diode, and the hollow arrow represents the light emitted by the photoluminescent material;
- Figure 2 is a schematic cross-sectional view of a second embodiment of the optoelectronic device of the application (the second light-emitting diode is not shown);
- 3A is a schematic cross-sectional view of a third embodiment of the optoelectronic device of this application.
- 3B is a top view of the third embodiment of the optoelectronic device of this application, in which the transparent barrier layer is not shown, and the dashed line in the figure is a schematic diagram of the outer contour of the first light emitting diode;
- 4A is a schematic cross-sectional view of an embodiment of the component of the optoelectronic device of the application.
- 4B is a top view of an embodiment of the components of the optoelectronic device of the application.
- FIG. 5A is a schematic diagram of an embodiment after the photoluminescent material is set in step S2 in the method for manufacturing an optoelectronic device of this application;
- Figure 5B is a top view of the embodiment shown in Figure 5A;
- FIG. 6A is a schematic diagram of an embodiment after the photoluminescent material is set in step S2 in the method for manufacturing an optoelectronic device of this application;
- Figure 6B is a top view of the embodiment shown in Figure 6A;
- Fig. 7 is a schematic diagram of an embodiment after the light blocking material is set in step S3 in the method for manufacturing an optoelectronic device of this application;
- FIG. 8 is a schematic diagram of an embodiment in which the first light window and the second light window are formed on the light blocking material in step S3 in the manufacturing method of the optoelectronic device of this application;
- FIG. 9 is a schematic diagram of an embodiment in which a transparent barrier material is provided on the entire surface of the product in step S4 in the method for manufacturing an optoelectronic device of this application;
- Light-emitting diode; 210 first light-emitting diode; 211, containing cavity; 212, opening; 220, second light-emitting diode; 2a, light-emitting unit;
- orientation words if there are the terms “center”, “horizontal”, “vertical”, “length”, “width”, “thickness”, “upper”, “lower” , “Front”, “Back”, “Left”, “Right”, “Vertical”, “Horizontal”, “Top”, “Bottom”, “Inner”, “Outer”, “Clockwise”, “Counterclockwise”
- the indication orientation and position relationship are based on the orientation or position relationship shown in the drawings, and are only used to facilitate the description of the application and simplify the description, and do not indicate or imply that the device or element referred to must have a specific orientation or a specific orientation.
- the structure and operation should not be understood as limiting the specific protection scope of this application.
- the wavelength range of blue light in this application is 400-480 nm
- the wavelength range of green light is 500-560 nm
- the wavelength range of red light is 600-760 nm.
- the “cross-section” in this application refers to a plane of a certain element (or device, structure) cut in a direction parallel to the substrate 100.
- optionally including an element means: including the element or not including the element.
- the present application provides an optoelectronic device, as shown in FIG. 1, including a substrate 100, a light emitting diode 200 and a photoluminescent material layer 300.
- a plurality of light-emitting diodes 200 are arranged on the surface of the substrate 100 at intervals, and the plurality of light-emitting diodes 200 include at least the first light-emitting diode 210.
- the first light emitting diode 210 has a hollow structure, so that a receiving cavity 211 is formed in the first light emitting diode 210.
- the receiving cavity 211 has an opening 212.
- the first light emitted by the first light emitting diode 210 is at least partially emitted into the receiving cavity 211, as shown in FIG. Shown by the solid arrow.
- At least part of the photoluminescent material layer 300 is disposed in the receiving cavity 211 of each first light emitting diode 210, as shown in FIG. 1, 2 or 3A.
- the light emitted by the photoluminescent material layer 300 in the containing cavity 211 after being excited by the first light is emitted in a direction away from the substrate 100 through the opening 212 of the containing cavity 211, as shown by the hollow arrow in FIG.
- the substrate 100 has a conductive structure, a thin film transistor, etc., and the thin film transistor can control whether a single light emitting diode 200 emits light.
- the structure of the substrate 100 belongs to the prior art and will not be detailed in this application.
- the first light of the first light-emitting diode 210 is used to excite the photoluminescent material layer 300 to emit light
- the accommodating cavity 211 with the opening 212 is used to limit the light emitting direction of the photoluminescent material layer 300 toward The direction of the opening 212.
- the first light emitting diode 210 does not emit light from the bottom of the accommodating cavity 211, but from the sidewall of the accommodating cavity 211, most of the first light emitted by the first light emitting diode 210 will not directly illuminate the opening 212. This helps to improve the color purity of the light emitted from the opening 212.
- This application achieves the purpose of improving the color purity of the light by making the direction of the excitation light different from that of the photoluminescent material layer 300, instead of increasing the thickness of the photoluminescent material layer 300 so that the excitation light emitted by the first light-emitting diode is Full absorption, therefore, the thickness of the photoluminescent material layer 300 of the present application can be appropriately reduced compared with the light-emitting layer of the prior art, which is beneficial to the thinning of the optoelectronic device.
- the first light-emitting diode 210 of this application is different from the traditional 2D LED structure stacked layer by layer, which is equivalent to forming a 3D LED structure.
- the light-emitting direction of the first light-emitting diode 210 is no longer the traditional light emission from a plane, but from The curved surface or multiple planes emit light, and the photoluminescent material layer 300 in the accommodating cavity 211 faces the excitation light from the surroundings, and its light output efficiency is higher.
- the cross-sectional shape of the first light emitting diode 210 may be a polygon, such as a triangle, a quadrilateral, etc., and may also be a circle, an ellipse, or other irregular shapes.
- the plurality of light-emitting diodes may further include a second light-emitting diode, and the top of the second light-emitting diode is adapted to emit light in a direction away from the substrate.
- the second light emitting diode may be a non-hollow structure or a hollow structure similar to the first light emitting diode, preferably a non-hollow structure.
- a light-transmitting adhesive layer may be arranged in the corresponding accommodating cavity.
- each light emitting diode 200 emits blue light, that is, the first light is blue light
- the photoluminescent material layer 300 emits red light or green light under the excitation of blue light. It is worth mentioning that when it is necessary to generate light of multiple colors in the optoelectronic device, different materials of the photoluminescent material layer 300 can be arranged in the accommodating cavity 211 of different first light-emitting diodes 210 to produce different colors of light.
- a part of the photoluminescent material layer 300 in the first light emitting diode 210 emits red light when excited by the light emitted by the first light emitting diode 210, and another part of the photoluminescent material layer 300 in the first light emitting diode 210 is exposed to light.
- the light emitted by the first light emitting diode 210 emits green light when excited.
- the photoluminescent material of the photoluminescent material layer 300 is a quantum dot material.
- the quantum dot material is dispersed in the resin, and then the resin in which the quantum dot material is dispersed is filled in the receiving cavity 211.
- the quantum dot material is cadmium-free or lead-free quantum dots.
- the quantum dots are perovskite quantum dots, inorganic semiconductor quantum dots, and carbon quantum dots.
- the photoluminescence material of the photoluminescence material layer 300 is a photoluminescence material other than quantum dots, such as phosphors.
- the type of quantum dots is not limited, and can be spherical, flake, rod, cube, etc.
- the photoluminescent material of the photoluminescent material layer 300 is a combination of quantum dots and other fluorescent materials.
- the specific composition for forming the photoluminescent material layer 300 can be selected in the prior art according to the light emission requirements of the optoelectronic device.
- the plurality of light-emitting diodes 200 of the present application further includes a second light-emitting diode 220, and the top of the second light-emitting diode 220 is suitable for facing away from the substrate 100.
- the light-emitting direction of the second light-emitting diode 220 is basically the same as the light-emitting direction of the photoluminescent material layer 300.
- the cross-sectional area of the second light emitting diode 220 does not exceed the cross-sectional area of the receiving cavity 211. In some embodiments, the second light emitting diode 220 has a cylindrical shape.
- the color of the light emitted by the second light emitting diode 220 is different from the light emitted by the photoluminescent material layer 300, and the light emitted by the second light emitting diode 220 can be mixed with the light emitted by the photoluminescent material layer 300. So as to get other colors of light.
- the optoelectronic device needs to be able to emit red light, green light, and blue light, respectively, so that the three primary colors are mixed to form light of various colors.
- the blue light can be emitted by the second light-emitting diode 220, and the red light and green light can be emitted by the first light.
- the blue light emitted by the light-emitting diode 210 excites the two photoluminescent material layers 300 to emit red light and green light respectively.
- the photoluminescent material layer 300 also covers the opening 212 of the receiving cavity 211 and the top of the first light emitting diode 210 (ie the top surface of the sidewall), so that the photoluminescent material layer 300 is opposite to Since the height of the substrate 100 is greater than the height of the accommodating cavity 211, this arrangement can further prevent the light emitted by the first light-emitting diode 210 from leaking from the light-emitting direction of the photoluminescent material layer 300, which is beneficial to improve the color purity of the light.
- the volume of the filling material is greater than the volume of the containing cavity 211, so that part of the material overflows from the opening 212 and covers the first light emitting diode 210
- the top surface of the photoluminescent material layer 300 covers the opening 212 of the receiving cavity 211 and the top of the first light emitting diode 210.
- the distance from the top of the second light emitting diode 220 to the substrate 100 is greater than the distance from the top of the first light emitting diode 210 to the substrate 100, so as to ensure that the height of the photoluminescent material layer 300 exceeds the top of the first light emitting diode 210.
- the height of the light-emitting surface of the second light emitting diode 220 and the light-emitting surface of the photoluminescent material layer 300 are substantially the same.
- the above distance from the top to the substrate refers to the vertical distance.
- the first light emitting diode 210 only emits light toward the inner surface of the containing cavity 211. This can be achieved by providing a reflective layer on the top and/or outer side of the first light emitting diode 210.
- only the top of the second light emitting diode 220 emits light, which can be achieved by providing a reflective layer on the outer side.
- the top and/or outer side of the first light emitting diode 210 may also be a light emitting surface.
- the outer side surface of the second light emitting diode 220 may also be a light emitting surface.
- the optoelectronic device in order to prevent the light emitted by the light-emitting diodes 200 from affecting each other and reduce the luminous intensity of the first light-emitting diode 210 (reducing the luminous intensity of the first light-emitting diode 210 is beneficial to reduce the thickness of the photoluminescent material layer 300),
- the optoelectronic device also includes a light blocking layer 400, as shown in FIGS. 2 and 3A.
- the light-blocking layer 400 fills the gaps between the light-emitting diodes 200 and covers the top of the first light-emitting diode 210.
- the height of the light-blocking layer 400 relative to the substrate 100 is greater than the height of each light-emitting diode 200, so that the light-blocking layer 400 isolates each light emitting diode 200.
- the light blocking layer 400 has a first light window 401 at a position opposite to the opening 212 of the accommodating cavity 211, and the light emitted by the photoluminescent material layer 300 is suitable to be emitted in a direction away from the substrate 100 through the first light window 401.
- the light emitting diode 200 further includes a second light emitting diode 220
- the light blocking layer 400 has a second light window 402 at a position opposite to the top of the second light emitting diode 220, and the light emitted from the top of the second light emitting diode 220 It is suitable for emitting in a direction away from the substrate 100 through the second light window 402.
- the light blocking layer 400 prevents light from being emitted from areas other than the first light window 401 and the second light window 402.
- the light blocking layer 400 may be formed of a black light blocking material, which can prevent light from passing through.
- the light-blocking layer 400 covering the top of the first light-emitting diode 210 is not limited to the light-blocking layer 400 being directly disposed on the top of the first light-emitting diode 210, and the light-blocking layer 400 may also be covering the top of the first light-emitting diode 210.
- no other layer is provided between the light blocking layer 400 and the first light emitting diode 210, as shown in FIG. 2, so that the light blocking layer 400 directly covers the top of the first light emitting diode 210.
- This embodiment can ensure The optoelectronic device has a relatively thin thickness.
- the photoluminescent material layer 300 covers the top of the first light emitting diode 210
- the light blocking layer 400 covers the photoluminescent material layer 300 provided on the top of the first light emitting diode 210, as shown in FIG. 3A.
- the light emitted from the top of the first light emitting diode 210 can excite the photoluminescent material layer 300 covering it to emit light, but since the photoluminescent material layer 300 is thin here, there may be some upward light emitted by the first light emitting diode. It is not completely absorbed by the photoluminescent material layer 300, which leads to the problem of low color purity of the light emitted from the edge of the photoluminescent material layer 300.
- the light blocking layer 400 is covered on this part of the thinner photoluminescent material layer 300 to reduce the purity. Low edge light blocking.
- the photoluminescent material layer 300 located above the opening 212 can absorb the light emitted from the first light emitting diode 210 obliquely towards the opening 212 and the light emitted obliquely from the top of the first light emitting diode 210 towards the first light window 401, further improving the The color purity of the light emitted from the first light window 401.
- a light extraction layer may be provided at the first light window 401 and/or the second light window to improve light efficiency.
- the number of the first light emitting diode 210 is multiple, so that there are multiple accommodating cavities 211 on the substrate 100.
- the orthographic projection of the light blocking layer 400 on the substrate 100 covers the orthographic projection of the top surface and the outer side surface of the first light emitting diode 210 on the substrate 100.
- the orthographic projection area of the first light window 401 at the substrate 100 is less than or equal to the orthographic projection area of the opening 212 on the substrate, that is, the cross-sectional area of the first light window 401 (ie, the cross-sectional area) is less than It is equal to the cross-sectional area of the opening 212, as shown in FIG. 2 or 3A.
- the light blocking layer 400 can obliquely emit the first light emitting diode 210 toward the opening 212 and is not blocked by the light absorbed by the photoluminescent material layer 300, thereby further improving the color purity of the light emitted from the first light window 401.
- the cross-sectional area of the second light window 402 is the same as the cross-sectional area of the second light-emitting diode 220, so that the utilization rate of the light emitted by the second light-emitting diode 220 is higher.
- the outer side of the light blocking layer 400 (that is, the side of the light blocking layer 400 away from the substrate 100) is provided with a transparent barrier layer 500.
- the transparent barrier layer 500 covers the first light window. 401;
- the light emitting diode 200 further includes a second light emitting diode 220, and the transparent barrier layer 500 also covers the second light window 402 corresponding to the second light emitting diode 220.
- the transparent barrier layer 500 is mainly used to block water and oxygen, and improve the stability of the photoluminescent material layer 300 and the light emitting diode 200.
- the light transmittance of the transparent barrier layer is greater than or equal to 85%.
- the outer side of the light blocking layer 400 may directly contact the transparent blocking layer 500. In other embodiments, the outer side of the light blocking layer 400 may also have other structures so as to be arranged in direct contact with the transparent blocking layer 500.
- the material of the transparent barrier layer 500 can be, but is not limited to, organic barrier materials such as polyurethane, polyacrylic resin, epoxy resin, or inorganic barrier materials.
- the material of the transparent barrier layer 500 is preferably a material with good barrier properties to better protect the photoinduced Luminescent material.
- a low-barrier material such as PET, can also be selected.
- other functional layers may be provided outside the transparent barrier layer 500 to improve the performance of the optoelectronic device.
- multiple light-emitting diodes 200 form multiple light-emitting units 2a arranged in an array, and each light-emitting unit 2a includes two first light-emitting diodes 210 and one second light-emitting diode 220, as shown in FIG. 3B.
- each light-emitting diode is suitable for emitting blue light
- the photoluminescent material layer 300 in the accommodating cavity 211 of one first light-emitting diode 210 is suitable for emitting red light under the excitation of blue light, and the other first emits light.
- the photoluminescent material layer 300 in the receiving cavity 211 of the diode 210 is suitable for emitting green light under the excitation of blue light.
- the array of light emitting units 2a is arranged in multiple rows and multiple columns, single row, single column or other regular arrangements.
- the dimension in the width direction of the light emitting diode is on the order of millimeters or microns.
- the present application also provides an optoelectronic device assembly. As shown in FIGS. 4A and 4B, it includes a substrate 100 and a plurality of light-emitting diodes 200 arranged on the surface of the substrate 100.
- the light-emitting diodes 200 are spaced apart from each other. It includes at least a first light-emitting diode 210 and optionally a second light-emitting diode 220.
- the first light emitting diode 210 has a hollow structure, so that a receiving cavity 211 is formed in the first light emitting diode 210, the receiving cavity 211 has an opening 212, and the first light emitted by the first light emitting diode 210 is at least partially emitted into the receiving cavity 211.
- the top of the second light emitting diode 220 is suitable for emitting light.
- the cross-sectional area of the second light emitting diode 220 does not exceed the cross-sectional area of the receiving cavity 211.
- the distance from the top of the second light emitting diode 220 to the substrate 100 is greater than the distance from the top of the first light emitting diode 210 to the substrate 100.
- the above-mentioned optoelectronic device is a device with lighting or display functions.
- This application also provides a method for manufacturing an optoelectronic device, including the following steps:
- the photoluminescent material may just fill the containing cavity 211, as shown in FIGS. 5A and 5B; in some embodiments, the photoluminescent material may also overflow from the containing cavity 211 to The outside of the opening 212 of the receiving cavity 211 and the top of the first light emitting diode 210 cover the photoluminescent material layer 300, as shown in FIGS. 6A and 6B.
- the accommodating cavity 211 of the first light emitting diode 210 has a larger opening 212, the filling of the photoluminescent material is relatively easy, and the precision of the process is not high; even if part of the photoluminescent material overflows to the top of the first light emitting diode 210 Even on the side, the overflowing photoluminescent material can be covered by the light-blocking material later, as long as the photoluminescent material does not fall on the top area of the second light-emitting diode 220, so the yield of the fabricated device is high.
- step S2 the photoluminescent material dispersed in the resin glue is filled into the receiving cavity 211 by printing or screen printing and cured to form the photoluminescent material layer 300. Since the accommodating cavity 211 has a large opening 212, it has no special requirements for the filled glue, and has no strict requirements on the accuracy of the printing equipment or screen printing equipment, and has high compatibility with poor processes such as glue splashing. Splashed glue can be solved by the subsequent light-blocking material covering, so the yield rate is high in mass production.
- step S2 the photoluminescent material dispersed in the resin glue is filled into the containing cavity 211 by coating or spraying and cured to form the photoluminescent material layer 300.
- step S2 further includes removing the photoluminescent material layer beyond the required range of the target.
- step S3 includes:
- the method of setting the light-blocking material is not limited, and it can be but not limited to coating, printing, and printing.
- the light-blocking material needs to be suitable for photolithography and can contain photoresist components.
- step S3 further includes the following steps:
- a transparent barrier material is arranged on the entire surface of the light barrier layer, thereby forming a transparent barrier layer 500, as shown in FIG. 9.
- the method of setting the transparent barrier material is not limited, and can be but not limited to coating, printing, and printing.
- the transparent barrier material may be, but is not limited to, organic barrier materials such as polyurethane, acrylic resin, epoxy resin, or inorganic barrier materials.
- the material of the transparent barrier layer is preferably a material with good barrier properties to protect the photoluminescent material.
- the photoelectric equipment prepared by the method of the present application can be used in display devices, lighting equipment, light sources of detection devices, monochromatic light generators, and the like.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Led Device Packages (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Abstract
一种光电设备及其制备方法、光电设备的组件。其中，光电设备包括：基板（100）；相互间隔地设于基板（100）表面上的多个发光二极管（200），多个发光二极管（200）中至少包括第一发光二极管（210）、可选地包括第二发光二极管（220），第一发光二极管（210）为中空结构，从而在第一发光二极管（210）内形成容纳腔（211），容纳腔（211）具有开口（212），第一发光二极管（210）发出的第一光线至少部分射向容纳腔（211）内，第二发光二极管（220）的顶部适于向远离基板（100）的方向发出光线；以及设于第一发光二极管（210）的容纳腔（211）内的光致发光材料层（300），光致发光材料层（300）被第一光线激发后发出的光适于通过容纳腔（211）的开口（212）向远离基板（100）的方向射出。
Description
本申请涉及光电设备技术领域，尤其涉及光电设备及其制备方法、光电设备的组件。
传统的LED器件通常由多个功能层层叠形成，基于传统LED的显示装置，如LCD、Mini-LED以及micro-LED等显示技术，均是在传统的LED上设置滤光层或者光转化层制备。
目前，基于量子点的LED显示装置，均为蓝色LED芯片之上层堆量子点形成，其优势即为量子点的显示优势以及单一蓝色芯片的高良率，但是劣势也很明显，为了达成单一的红光或绿光发射，必须使得芯片发出的蓝光被量子点“全吸收”转化的效果。但是，因为传统量子点LED装置是顶发光结构，为了使得蓝光被量子点层高吸收或者全吸收，必须有足够厚的量子点层，这就导致量子点用量升高、成本增加、封装效果不良以及自吸收导致发光效率降低等问题。
发明内容
为了克服现有技术的不足，本申请的一个目的在于提供一种光电设备及其制备方法，能够减少或避免激发光通过光致发光材料层射出，从而有利于提高发射光的色纯度。
根据本申请的一个方面，提供一种光电设备，包括：
基板；
设于上述基板表面上的多个发光二极管，各上述发光二极管相互间隔地设置，上述多个发光二极管中至少包括第一发光二极管，上述第一发光二极管为 中空结构，从而在上述第一发光二极管内形成容纳腔，上述容纳腔具有开口，上述第一发光二极管发出的第一光线至少部分射向上述容纳腔内；以及
设于上述第一发光二极管的上述容纳腔内的光致发光材料层，上述光致发光材料层被上述第一光线激发后发出的光适于通过上述容纳腔的上述开口向远离上述基板的方向射出。
在其中一个实施例中，上述多个发光二极管中还包括第二发光二极管，第二发光二极管的顶部适于向远离基板的方向发出光线。
在其中一个实施例中，上述光致发光材料层的光致发光材料为量子点材料。
在其中一个实施例中，上述量子点材料分散于树脂中，分散有上述量子点材料的上述树脂填充于上述容纳腔内。
在其中一个实施例中，上述第二发光二极管顶部到上述基板的距离大于上述第一发光二极管顶部到上述基板的距离。
在其中一个实施例中，上述光致发光材料层还覆盖上述容纳腔的上述开口以及上述第一发光二极管的顶部，使得上述光致发光材料层相对于上述基板的高度大于上述容纳腔的高度。
在其中一个实施例中，上述光电设备还包括阻光层，上述阻光层将各上述发光二极管之间的空隙填充并覆盖于上述第一发光二极管的顶部之上，上述阻光层相对于上述基板的高度大于各上述发光二极管的高度，上述阻光层在与上述容纳腔的上述开口相对的位置具有第一光窗，上述光致发光材料层发出的光线适于通过上述第一光窗向远离上述基板的方向射出，上述阻光层在与上述第二发光二极管顶部相对的位置具有第二光窗，上述第二发光二极管发出的光线适于通过上述第二光窗向远离上述基板的方向射出。
在其中一个实施例中，上述第一发光二极管的数量为多个。
在其中一个实施例中，上述阻光层在上述基板上的正投影覆盖上述第一发光二极管的顶面以及外侧面在上述基板上的正投影。
在其中一个实施例中，上述第一光窗在上述基板上的正投影面积小于等于上述开口在上述基板上的正投影面积。
在其中一个实施例中，上述阻光层外侧设有透明阻隔层，且上述透明阻隔层覆盖上述第一光窗以及上述第二光窗。
在其中一个实施例中，多个上述发光二极管中还包括第二发光二极管，多个上述发光二极管组成呈阵列设置的多个发光单元，每一上述发光单元包括至少两个上述第一发光二极管以及至少一个上述第二发光二极管，在每一上述发光单元中：
各上述发光二极管适于发射蓝光，其中部分上述第一发光二极管的上述容纳腔内的上述光致发光材料层适于在蓝光激发下发射红光，另一部分上述第一发光二极管的上述容纳腔内的上述光致发光材料层适于在蓝光激发下发射绿光。
根据本申请的另一个方面，提供一种光电设备的组件，包括：
基板；以及
设于上述基板表面的多个发光二极管，各上述发光二极管相互间隔地设置，上述多个发光二极管中至少包括第一发光二极管，上述第一发光二极管为中空结构，从而在上述第一发光二极管内形成容纳腔，上述容纳腔具有开口，上述第一发光二极管发出的第一光线至少部分射向上述容纳腔内。
在其中一个实施例中，上述多个发光二极管中还包括第二发光二极管，第二发光二极管的顶部适于向远离基板的方向发出光线。
在其中一个实施例中，上述第二发光二极管的顶部到上述基板的距离大于上述第一发光二极管的顶部到上述基板的距离。
根据本申请的另一个方面，提供一种光电设备的制备方法，包括：
S1，提供本申请前述的光电设备的组件；
S2，向上述第一发光二极管的上述容纳腔内设置光致发光材料，形成光致发光材料层；
S3，在各上述发光二极管外以及上述光致发光材料层外设置阻光材料，并在与上述容纳腔的上述开口对应的位置形成不被上述阻光材料覆盖的第一光窗，在与上述第二发光二极管的顶部对应的位置形成不被上述阻光材料覆盖的第二光窗，从而制备得到阻光层。
在其中一个实施例中，上述步骤S2中，将分散于树脂胶水中的上述光致发光材料通过打印或丝网印刷的方式填充入上述容纳腔内并固化形成光致发光材料层。
在其中一个实施例中，上述步骤S3包括以下步骤：
S31，在上述光电设备的组件上整面设置阻光材料，以使得上述阻光材料覆盖于上述发光二极管外以及上述光致发光材料层上；
S32，利用光刻技术去除与各上述容纳腔的上述开口对应的上述阻光材料形成上述第一光窗，利用光刻技术去除与上述第二发光二极管的顶部对应的上述阻光材料形成上述第二光窗。
在其中一个实施例中，上述步骤S3之后，还包括以下步骤：
S4，在上述阻光层上整面设置透明阻隔材料，形成透明阻隔层。
相比现有技术，本申请的一个有益效果在于设计了中空结构的第一发光二极管：一方面，第一发光二极管的内侧壁向容纳腔内发出激发光，从而设置在容纳腔内的光致发光材料被激发产生光，另一方面，光致发光材料的出光方向受到容纳腔的限制，从容纳腔的开口出光，且容纳腔的体积较大，因此无需像 现有技术一样在发光二极管上方设置很厚的光致发光材料即可保证从开口射出光的颜色纯度，从而有利于制备高色彩表现力的光电设备；此外，该光电设备的第一发光二极管具有较大开口的容纳腔对于光致发光材料的填充工艺具有良好的兼容性，工艺的可行性高，制备器件的良率高。
本申请的以上以及其他技术特征、有益效果将在接下来的描述中进一步说明。
图1为本申请的光电设备的第一个实施例的剖面示意图，其中实心箭头表示第一发光二极管发出的光线，空心箭头表示光致发光材料发出的光线；
图2为本申请的光电设备的第二个实施例的剖面示意图(第二发光二极管未示出)；
图3A为本申请的光电设备的第三个实施例的剖面示意图；
图3B为本申请的光电设备的第三个实施例的俯视图，其中透明阻隔层未示出，图中的虚线为第一发光二极管外侧轮廓的示意；
图4A为本申请的光电设备的组件的一个实施例的剖面示意图；
图4B为本申请的光电设备的组件的一个实施例的俯视图；
图5A为本申请的光电设备制备方法中，步骤S2设置光致发光材料后的一个实施例的示意图；
图5B为图5A所示的实施例的俯视图；
图6A为本申请的光电设备制备方法中，步骤S2设置光致发光材料后的一个实施例的示意图；
图6B为图6A所示的实施例的俯视图；
图7为本申请的光电设备制备方法中，步骤S3设置阻光材料后的一个实施 例的示意图；
图8为本申请的光电设备制备方法中，步骤S3在阻光材料上形成第一光窗和第二光窗的一个实施例的示意图；
图9为本申请的光电设备制备方法中，步骤S4在产品上整面设置透明阻隔材料的一个实施例的示意图；
以上各附图中，仅示出了部分发光二极管。
图中：
100、基板；
200、发光二极管；210、第一发光二极管；211、容纳腔；212、开口；220、第二发光二极管；2a、发光单元；
300、光致发光材料层；
400、阻光层；401、第一光窗；402、第二光窗；
500、透明阻隔层。
下面，结合具体实施方式，对本申请做进一步描述，需要说明的是，在不相冲突的前提下，以下描述的各实施例之间或各技术特征之间可以任意组合形成新的实施例。
在本申请的描述中，需要说明的是，对于方位词，如有术语“中心”，“横向”、“纵向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示方位和位置关系为基于附图所示的方位或位置关系，仅是为了便于叙述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定方位构造和操作，不能理解为限制本申请的具体保护范围。
需要说明的是，本申请的说明书和权利要求书中的术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便这里描述的本申请的实施例。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。本申请中的蓝光的波长范围为400～480nm，绿光的波长范围为500～560nm，红光的波长范围为600～760nm。本申请中“横截面”指的是平行于基板100的方向所截得的某元件(或设备、结构)的平面。
本申请的说明书和权利要求书中，可选地包括某元件是指：包括该元件或者不包括该元件。
本申请提供一种光电设备，如图1所示，包括基板100、发光二极管200以及光致发光材料层300。
基板100表面上相互间隔地设置多个发光二极管200，多个发光二极管200中至少包括第一发光二极管210。
第一发光二极管210为中空结构，从而第一发光二极管210内形成容纳腔211，容纳腔211具有开口212，第一发光二极管210发出的第一光线至少部分射向容纳腔211内，如图1中实心箭头所示。
至少部分光致发光材料层300设于各第一发光二极管210的容纳腔211内，如图1、2或3A所示。容纳腔211内的光致发光材料层300被第一光线激发后发出的光通过容纳腔211的开口212向远离基板100的方向射出，如图1中空心箭头所示。
值得一提的是，第一发光二极管210在容纳腔211的底部不发光。基板100上具有导电结构、薄膜晶体管等，薄膜晶体管能够控制单个发光二极管200发光与否。基板100的结构属于现有技术，本申请不再详述。
在本申请的光电设备中，第一发光二极管210的第一光线用于激发光致发光材料层300发光，利用具有开口212的容纳腔211，将光致发光材料层300的出光方向限制为朝向开口212的方向。此外，由于第一发光二极管210并不是从容纳腔211的底部发光，而是从容纳腔211的侧壁发光，因此第一发光二极管210发出的大部分第一光线不会直接射向开口212，这有利于提高从开口212射出的光的颜色纯度。
本申请通过使激发光的出光方向与光致发光材料层300的出光方向不同，达到提高出光色纯度的目的，而不是通过增加光致发光材料层300厚度使第一发光二极管发出的激发光被全吸收，因此本申请的光致发光材料层300的厚度与现有技术的发光层相比，可以适当降低，这有利于光电设备的轻薄化。
本申请的第一发光二极管210与传统的逐层堆积的2D LED结构不同，其相当于形成了3D LED结构，第一发光二极管210的出光方向不再是传统的从一个平面发光，而是从曲面或多个平面发光，容纳腔211内的光致发光材料层300面对从四周射入的激发光，其出光效率更高。
第一发光二极管210的横截面形状可以是多边形，如三边形、四边形等，还可以是圆形、椭圆形或其他不规则形状等。
在一些实施例中，上述多个发光二极管中还可以包括第二发光二极管，第二发光二极管的顶部适于向远离基板的方向发出光线。
在上述实施例中，第二发光二极管可以为非中空结构，也可以为类似第一发光二极管的中空结构，优选为非中空结构。当第二发光二极管为中空结构时， 可以在对应的容纳腔中设置透光胶层。
在一些实施例中，各发光二极管200发射蓝光，也即第一光线为蓝光，光致发光材料层300在蓝光的激发下发射红光或绿光。值得一提的是，当光电设备中需要产生多种颜色的光时，可以在不同的第一发光二极管210的容纳腔211内设置不同的光致发光材料层300的材料，从而产生不同颜色的光，例如一部分第一发光二极管210内的光致发光材料层300在受到第一发光二极管210发射的光激发时发射红光，另一部分第一发光二极管210内的光致发光材料层300在受到第一发光二极管210发射的光激发时发射绿光。
在一些实施例中，光致发光材料层300的光致发光材料为量子点材料。在一些实施例中，量子点材料分散在树脂中，然后将分散有量子点材料的树脂填充在容纳腔211内。在一些实施例中，量子点材料为无镉或无铅量子点。在另一些实施例中，量子点为钙钛矿量子点、无机半导体量子点、碳量子点。
在一些实施例中，光致发光材料层300的光致发光材料为量子点以外的光致发光的材料，例如荧光粉。量子点的种类不限，可以为球状、片状、棒状、立方体状等。在一些实施例中，光致发光材料层300的光致发光材料为量子点与其它荧光材料的组合。具体的形成光致发光材料层300的组合物可根据光电设备的发光需求在现有技术中进行选择。
在一些实施例中，如图1、图3A和图3B所示，本申请的多个发光二极管200中还包括第二发光二极管220，第二发光二极管220的顶部适于向远离基板100的方向发出光线，第二发光二极管220的出光方向与光致发光材料层300的出光方向基本一致。
在一些实施例中，第二发光二极管220的横截面积不超过容纳腔211的横截面积。在一些实施例中，第二发光二极管220为柱状。
值得一提的是，第二发光二极管220发射的光与光致发光材料层300发射的光的颜色不同，可以将第二发光二极管220发射的光与光致发光材料层300发射的光混合，从而得到其他颜色的光。在一些实施例中，光电设备需要能够分别发射红光、绿光和蓝光，从而利用三原色混合形成各种颜色的光，蓝光可以由第二发光二极管220发出，红光和绿光则由第一发光二极管210发出的蓝光激发两种光致发光材料层300分别发出红光和绿光。
在一些实施例中，如图3A所示，光致发光材料层300还覆盖容纳腔211的开口212以及第一发光二极管210的顶部(即侧壁顶面)，从而光致发光材料层300相对于基板100的高度大于容纳腔211的高度，如此设置可以进一步避免第一发光二极管210发出的光从光致发光材料层300的出光方向漏出，有利于提高出光颜色纯度。在一些实施例中，向容纳腔211内填充用于制备光致发光材料层300的材料时，填充材料的体积大于容纳腔211的体积，从而部分材料从开口212溢出并覆盖第一发光二极管210的顶面，使得制得的光致发光材料层300覆盖容纳腔211的开口212以及第一发光二极管210的顶部。
在一些实施例中，第二发光二极管220顶部到基板100的距离大于第一发光二极管210顶部到基板100的距离，从而可保证光致发光材料层300的高度超过第一发光二极管210的顶部时，第二发光二极管220的出光面与光致发光材料层300出光面的高度基本一致。上述顶部到基板的距离指的是垂直距离。
在一些实施例中，第一发光二极管210只有朝向容纳腔211的内侧面出光。可以通过在第一发光二极管210的顶部和/或外侧面设置反射层实现。
在一些实施例中，第二发光二极管220只有顶部出光，可以通过在外侧面设置反射层实现。
在一些实施例中，第一发光二极管210除了朝向容纳腔211的内侧面出光， 其顶部和/或外侧面也可以是出光面。在一些实施例中，第二发光二极管220除了顶部出光，其外侧面也可以是出光面。
在一些实施例中，为了避免各发光二极管200发出的光互相影响并降低第一发光二极管210的发光强度(降低第一发光二极管210的发光强度有利于降低光致发光材料层300的厚度)，光电设备还包括阻光层400，如图2、3A所示。
阻光层400将各发光二极管200之间的空隙填充并覆盖于第一发光二极管210的顶部之上，阻光层400相对于基板100的高度大于各发光二极管200的高度，从而通过阻光层400将各个发光二极管200隔离。阻光层400在与容纳腔211的开口212相对的位置具有第一光窗401，光致发光材料层300发出的光适于通过第一光窗401向远离基板100的方向射出。在一些实施例中，发光二极管200中还包括第二发光二极管220，阻光层400在与第二发光二极管220的顶部相对的位置具有第二光窗402，第二发光二极管220顶部发出的光线适于通过第二光窗402向远离基板100的方向射出。阻光层400使得光线无法从第一光窗401和第二光窗402以外的区域发出。阻光层400可以由黑色的阻光材料形成，能够阻止光线通过。
阻光层400覆盖于第一发光二极管210的顶部之上并不仅限于阻光层400直接设置在第一发光二极管210的顶部，也可以是阻光层400覆盖设置在第一发光二极管210顶部的光致发光材料层300上。
在一些实施例中，阻光层400与第一发光二极管210之间不设置其他层，如图2所示，从而阻光层400直接将第一发光二极管210的顶部覆盖，此实施例可以保证光电设备具有较薄的厚度。
在另一些实施例中，光致发光材料层300覆盖第一发光二极管210的顶部，阻光层400覆盖设置在第一发光二极管210顶部的光致发光材料层300，如图 3A所示。第一发光二极管210顶部发出的光线可以激发覆盖在其上的光致发光材料层300发光，但是由于此处光致发光材料层300较薄，可能会存在第一发光二极管发出的部分向上的光线未被光致发光材料层300全部吸收，导致光致发光材料层300边缘出光色纯度不高的问题，因此在这部分较薄的光致发光材料层300上覆盖阻光层400以将纯度较低的边缘光线阻挡。此外，位于开口212之上的光致发光材料层300可以吸收第一发光二极管210倾斜射向开口212的光以及第一发光二极管210顶部倾斜射向第一光窗401的光，进一步提高了从第一光窗401射出的光的颜色纯度。
在一些实施例中，第一光窗401和/或第二光窗处可以设置光提取层，提高光效。
在一些实施例中，第一发光二极管210的数量为多个，从而基板100上具有多个容纳腔211。
在一些实施例中，阻光层400在基板100上的正投影覆盖第一发光二极管210的顶面以及外侧面在基板100上的正投影。
在一些实施例中，第一光窗401在基板100处的正投影面积小于等于开口212在基板上的正投影面积，也即第一光窗401的横截面积(即横截面的面积)小于等于开口212的横截面积，如图2或3A所示。利用阻光层400可以将第一发光二极管210倾斜射向开口212且未被光致发光材料层300吸收的光阻挡，从而进一步提高从第一光窗401射出的光的颜色纯度。
在一些实施例中，第二光窗402的横截面积与第二发光二极管220的横截面积一致，从而第二发光二极管220发射出的光的利用率更高。
在一些实施例中，阻光层400的外侧(即阻光层400的远离基板100的一侧)设有透明阻隔层500，如图2或3A所示，透明阻隔层500覆盖第一光窗401； 在一些实施例中，发光二极管200中还包括第二发光二极管220，透明阻隔层500还覆盖与第二发光二极管220对应的第二光窗402。透明阻隔层500主要用于阻隔水氧，提高光致发光材料层300以及发光二极管200的稳定性。在一些实施例中，透明阻隔层的透光率大于等于85％。
在一些实施例中，阻光层400的外侧可以直接接触设置透明阻隔层500。在另一些实施例中，阻光层400的外侧还可以有其他结构，从而和透明阻隔层500非直接接触设置。
透明阻隔层500的材料可以是但不限于聚氨酯、聚丙烯酸树脂、环氧树脂等有机阻隔材料或者无机阻隔材料等，透明阻隔层500的材料优选阻隔性好的材料，以更好地保护光致发光材料。当光致发光材料为高稳定性材料时，也可以选择低阻隔性的材料，比如PET。
在一些实施例中，透明阻隔层500外侧还可以设置其他功能层，提高光电设备的性能。
在一些实施例中，多个发光二极管200组成呈阵列设置的多个发光单元2a，每一发光单元2a包括两个第一发光二极管210以及一个第二发光二极管220，如图3B所示。在每一发光单元2a中：各发光二极管适于发射蓝光，其中一个第一发光二极管210的容纳腔211内的光致发光材料层300适于在蓝光激发下发射红光，另一个第一发光二极管210的容纳腔211内的光致发光材料层300适于在蓝光激发下发射绿光。
在一些实施例中，发光单元2a的阵列为多行多列，单行，单列或者其他规律性排布。
在一些实施例中，发光二极管的宽度方向的尺寸为毫米级或微米级。
本申请还提供一种光电设备的组件，如图4A、4B所示，包括基板100以及 设于基板100表面的多个发光二极管200，各发光二极管200相互间隔地设置，多个发光二极管200中至少包括第一发光二极管210，可选地包括第二发光二极管220。第一发光二极管210为中空结构，从而第一发光二极管210内形成容纳腔211，容纳腔211具有开口212，第一发光二极管210发出的第一光线至少部分射向容纳腔211内。第二发光二极管220的顶部适于发光。
在一些实施例中，第二发光二极管220的横截面积不超过容纳腔211的横截面积。
在一些实施例中，第二发光二极管220的顶部到基板100的距离大于第一发光二极管210的顶部到基板100的距离。
在一些实施例中，上述光电设备为具有照明、或者显示功能的设备。
本申请还提供一种光电设备的制备方法，包括以下步骤：
S1，提供本申请前述的光电设备的组件，如图4A、4B所示；
S2，向第一发光二极管210的容纳腔211内设置光致发光材料，形成光致发光材料层300，如图5A、5B或6A、6B所示；
S3，在各发光二极管200外以及光致发光材料层300外设置阻光材料，如图7所示，并在与容纳腔211的开口212对应的位置形成不被阻光材料覆盖的第一光窗401，在与第二发光二极管220的顶部对应的位置形成不被阻光材料覆盖的第二光窗402，从而制备得到阻光层，如图8所示。
在一些实施例中，步骤S2中，光致发光材料可以是刚好充满容纳腔211，如图5A、5B所示；在一些实施例中，光致发光材料也可以从容纳腔211内溢出，以使得容纳腔211的开口212之外以及第一发光二极管210的顶部覆盖光致发光材料层300，如图6A、6B所示。
由于第一发光二极管210的容纳腔211具有较大的开口212，因此光致发光 材料的填充较为容易，对工艺的精度要求不高；即使部分光致发光材料溢出到第一发光二极管210的顶部甚至侧面，后续可以通过阻光材料将溢出的光致发光材料覆盖，只要光致发光材料不落到第二发光二极管220顶部的区域即可，因此制备得到的器件的良率高。
在一些实施例中，步骤S2中，将分散于树脂胶水中的光致发光材料通过打印或丝网印刷的方式填充入容纳腔211并固化形成光致发光材料层300。由于容纳腔211具有较大的开口212，其对于填充的胶水无特殊要求，且对打印设备或丝网印刷设备的精度无严苛的要求，对于胶水外溅等工艺不良兼容性很高，外溅的胶水均可通过后续阻光材料覆盖解决，因此大规模生产时良率高。
在一些实施例中，步骤S2中，将分散于树脂胶水中的光致发光材料通过涂布或者喷涂的方式填充入容纳腔211并固化形成光致发光材料层300。
在一些实施例中，步骤S2还包括对于超出目标所需范围的光致发光材料层进行去除。
在一些实施例中，步骤S3包括：
S31，在光电设备的组件上整面设置阻光材料，以使得阻光材料覆盖于各发光二极管200外以及光致发光材料层300上，也即阻光材料将相邻的发光二极管200之间的间隙填充，并覆盖在各发光二极管200顶部上方，同时也将光致发光材料层300的上表面覆盖，如图7所示；
S32，利用光刻技术去除与各容纳腔211的开口212对应的阻光材料形成第一光窗401，利用光刻技术去除与第二发光二极管220的顶部对应的阻光材料形成第二光窗402，如图8所示。设置阻光材料的方式不限，可以但不限于涂布、印刷、打印。阻光材料需要适用于光刻技术，可以包含光刻胶成分。
在一些实施例中，步骤S3之后还包括以下步骤：
S4，在阻光层上整面设置透明阻隔材料，从而形成透明阻隔层500，如图9所示。
设置透明阻隔材料的方式不限，可以但不限于涂布、印刷、打印。在一些实施例中，透明阻隔材料可以是但不限于聚氨酯、丙烯酸树脂、环氧树脂等有机阻隔材料或者无机阻隔材料。透明阻隔层的材料优选阻隔性好的材料，以保护光致发光材料。
本申请的方法制备得到的光电设备可用于显示器件、照明设备、检测器件的光源、单色光发生器等。
上述实施方式仅为本申请的优选实施方式，不能以此来限定本申请保护的范围，本领域的技术人员在本申请的基础上所做的任何非实质性的变化及替换均属于本申请所要求保护的范围。
Claims (19)
- 一种光电设备，其特征在于，包括：基板；设于所述基板表面上的多个发光二极管，各所述发光二极管相互间隔地设置，所述多个发光二极管中至少包括第一发光二极管，所述第一发光二极管为中空结构，从而在所述第一发光二极管内形成容纳腔，所述容纳腔具有开口，所述第一发光二极管发出的第一光线至少部分射向所述容纳腔内；以及设于所述第一发光二极管的所述容纳腔内的光致发光材料层，所述光致发光材料层被所述第一光线激发后发出的光适于通过所述容纳腔的所述开口向远离所述基板的方向射出。
- 根据权利要求1所述的光电设备，其特征在于，所述多个发光二极管中还包括第二发光二极管，所述第二发光二极管的顶部适于向远离所述基板的方向发出光线。
- 根据权利要求1或2所述的光电设备，其特征在于，所述光致发光材料层的光致发光材料为量子点材料。
- 根据权利要求1或2所述的光电设备，其特征在于，所述量子点材料分散于树脂中，分散有所述量子点材料的所述树脂填充于所述容纳腔内。
- 根据权利要求1或2所述的光电设备，其特征在于，所述光致发光材料层还覆盖所述容纳腔的所述开口以及所述第一发光二极管的顶部，从而所述光致发光材料层相对于所述基板的高度大于所述容纳腔的高度。
- 根据权利要求5所述的光电设备，其特征在于，所述第二发光二极管顶部到所述基板的距离大于所述第一发光二极管顶部到所述基板的距离。
- 根据权利要求1-6中任一项所述的光电设备，其特征在于，所述光电设备还包括阻光层，所述阻光层将各所述发光二极管之间的空隙填充并覆盖于所述第一发光二极管的顶部之上，所述阻光层相对于所述基板的高度大于各所述发光二极管的高度，所述阻光层在与所述容纳腔的所述开口相对的位置具有第一光窗，所述光致发光材料层发出的光线适于通过所述第一光窗向远离所述基板的方向射出，所述阻光层在与所述第二发光二极管顶部相对的位置具有第二光窗，所述第二发光二极管发出的光线适于通过所述第二光窗向远离所述基板的方向射出。
- 根据权利要求1-6中任一项所述的光电设备，其特征在于，所述第一发光二极管的数量为多个。
- 根据权利要求7所述的光电设备，其特征在于，所述阻光层在所述基板上的正投影覆盖所述第一发光二极管的顶面以及外侧面在所述基板上的正投影。
- 根据权利要求7所述的光电设备，其特征在于，所述第一光窗在所述基板上的正投影面积小于等于所述开口在所述基板上的正投影面积。
- 根据权利要求7所述的光电设备，其特征在于，所述阻光层外侧设有透明阻隔层，且所述透明阻隔层覆盖所述第一光窗以及所述第二光窗。
- 根据权利要求1-11中任一项所述的光电设备，其特征在于，多个所述发光二极管中还包括第二发光二极管，多个所述发光二极管组成呈阵列设置的多个发光单元，每一所述发光单元包括至少两个所述第一发光二极管以及至少一个所述第二发光二极管，在每一所述发光单元中：各所述发光二极管适于发射蓝光，其中部分所述第一发光二极管的所述容纳腔内的所述光致发光材料层适于在蓝光激发下发射红光，另一部分所述第一 发光二极管的所述容纳腔内的所述光致发光材料层适于在蓝光激发下发射绿光。
- 一种光电设备的组件，其特征在于，包括：基板；以及设于所述基板表面的多个发光二极管，各所述发光二极管相互间隔地设置，所述多个发光二极管中至少包括第一发光二极管所述第一发光二极管为中空结构，从而在所述第一发光二极管内形成容纳腔，所述容纳腔具有开口，所述第一发光二极管发出的第一光线至少部分射向所述容纳腔内。
- 根据权利要求13所述的光电设备的组件，其特征在于，所述多个发光二极管中还包括第二发光二极管，所述第二发光二极管的顶部适于向远离所述基板的方向发出光线。
- 根据权利要求13或14所述的光电设备的组件，其特征在于，所述第二发光二极管的顶部到所述基板的距离大于所述第一发光二极管的顶部到所述基板的距离。
- 一种光电设备的制备方法，其特征在于，包括以下步骤：S1，提供如权利要求13至15中任一项所述的光电设备的组件；S2，向所述第一发光二极管的所述容纳腔内设置光致发光材料，形成光致发光材料层；S3，在各所述发光二极管外以及所述光致发光材料层外设置阻光材料，并在与所述容纳腔的所述开口对应的位置形成不被所述阻光材料覆盖的第一光窗，在与所述第二发光二极管的顶部对应的位置形成不被所述阻光材料覆盖的第二光窗，从而制备得到阻光层。
- 根据权利要求16所述的光电设备的制备方法，其特征在于，所述步骤S2中，将分散于树脂胶水中的所述光致发光材料通过打印或丝网印刷的方式填充入所述容纳腔内并固化形成光致发光材料层。
- 根据权利要求16所述的光电设备的制备方法，其特征在于，所述步骤S3包括以下步骤：S31，在所述光电设备的组件上整面设置阻光材料，以使得所述阻光材料覆盖于所述发光二极管外以及所述光致发光材料层上；S32，利用光刻技术去除与各所述容纳腔的所述开口对应的所述阻光材料形成所述第一光窗，利用光刻技术去除与所述第二发光二极管的顶部对应的所述阻光材料形成所述第二光窗。
- 根据权利要求16-18中任一项所述的光电设备的制备方法，其特征在于，所述步骤S3之后，还包括以下步骤：S4，在所述阻光层上整面设置透明阻隔材料，形成透明阻隔层。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910629605.XA CN110491986B (zh) | 2019-07-12 | 2019-07-12 | 光电设备及其制备方法、光电设备的组件 |
| CN201910629605.X | 2019-07-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2021008438A1 true WO2021008438A1 (zh) | 2021-01-21 |
Family
ID=68547118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2020/101114 WO2021008438A1 (zh) | 2019-07-12 | 2020-07-09 | 光电设备及其制备方法、光电设备的组件 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110491986B (zh) |
| WO (1) | WO2021008438A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491986B (zh) * | 2019-07-12 | 2021-11-19 | 纳晶科技股份有限公司 | 光电设备及其制备方法、光电设备的组件 |
| CN113497077A (zh) * | 2020-04-03 | 2021-10-12 | 京东方科技集团股份有限公司 | 无机发光二极管基板及其制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120099887A (ko) * | 2011-03-02 | 2012-09-12 | 순천대학교 산학협력단 | 고효율 ｌｅｄ 소자 및 그의 제조방법 |
| CN103229316A (zh) * | 2010-11-26 | 2013-07-31 | 首尔Opto仪器股份有限公司 | 发光装置及其制造方法 |
| CN104868023A (zh) * | 2015-05-11 | 2015-08-26 | 南京大学 | Iii族氮化物半导体/量子点混合白光led器件及其制备方法 |
| CN105977350A (zh) * | 2016-05-23 | 2016-09-28 | 吉林大学 | 基于能量转移机制的量子点发光二极管的制备方法 |
| CN108389941A (zh) * | 2018-04-08 | 2018-08-10 | 中国科学院半导体研究所 | 显指可调的无荧光粉单芯片白光led器件及其制备方法 |
| CN110491986A (zh) * | 2019-07-12 | 2019-11-22 | 纳晶科技股份有限公司 | 光电设备及其制备方法、光电设备的组件 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9728685B2 (en) * | 2013-02-28 | 2017-08-08 | Nichia Corporation | Light emitting device and lighting device including same |
| CN109119409B (zh) * | 2018-08-27 | 2020-07-24 | 福建兆元光电有限公司 | 多合一led芯片及制造方法 |
-
2019
- 2019-07-12 CN CN201910629605.XA patent/CN110491986B/zh active Active
-
2020
- 2020-07-09 WO PCT/CN2020/101114 patent/WO2021008438A1/zh active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103229316A (zh) * | 2010-11-26 | 2013-07-31 | 首尔Opto仪器股份有限公司 | 发光装置及其制造方法 |
| KR20120099887A (ko) * | 2011-03-02 | 2012-09-12 | 순천대학교 산학협력단 | 고효율 ｌｅｄ 소자 및 그의 제조방법 |
| CN104868023A (zh) * | 2015-05-11 | 2015-08-26 | 南京大学 | Iii族氮化物半导体/量子点混合白光led器件及其制备方法 |
| CN105977350A (zh) * | 2016-05-23 | 2016-09-28 | 吉林大学 | 基于能量转移机制的量子点发光二极管的制备方法 |
| CN108389941A (zh) * | 2018-04-08 | 2018-08-10 | 中国科学院半导体研究所 | 显指可调的无荧光粉单芯片白光led器件及其制备方法 |
| CN110491986A (zh) * | 2019-07-12 | 2019-11-22 | 纳晶科技股份有限公司 | 光电设备及其制备方法、光电设备的组件 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110491986B (zh) | 2021-11-19 |
| CN110491986A (zh) | 2019-11-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5980577B2 (ja) | 側面照射型ｌｅｄ発光装置及び側面照射型ｌｅｄ発光装置の製造方法 | |
| US20170122502A1 (en) | Display with color conversion | |
| TWM576667U (zh) | 顯示裝置 | |
| JPWO2005106978A1 (ja) | 発光装置およびその製造方法 | |
| JP2012038862A (ja) | 半導体発光装置 | |
| JP2009537996A (ja) | 波長変換物質を有する光電子半導体素子、半導体素子を有する光電子半導体コンポーネント、および光電子半導体素子の製造方法 | |
| JP2008166782A (ja) | 発光素子 | |
| WO2021008438A1 (zh) | 光电设备及其制备方法、光电设备的组件 | |
| CN109873089A (zh) | 发光二极管显示面板及其制造方法 | |
| TWI573295B (zh) | 具有形成於溝槽中之反射壁之發光二極體混合室 | |
| CN111048498A (zh) | 显示装置及显示装置的制作方法 | |
| JP2013084881A (ja) | 発光素子 | |
| US20110002127A1 (en) | Optical element and manufacturing method therefor | |
| TWM462822U (zh) | 雙晶片發光二極體 | |
| JP6421952B2 (ja) | 発光ダイオードの色変換用基板及びその製造方法 | |
| WO2021166772A1 (ja) | 発光デバイス、および発光デバイスの製造方法 | |
| US20170207202A1 (en) | Light emitting diodes and reflector | |
| KR20090039932A (ko) | 발광 소자 패키지 | |
| US20170084800A1 (en) | Light emitting device package structure and manufacturing method thereof | |
| KR101461154B1 (ko) | 반도체 소자 구조물을 제조하는 방법 | |
| JP6535965B2 (ja) | 発光ダイオードの色変換用基板及びその製造方法 | |
| JP2008205170A (ja) | 発光半導体デバイス | |
| TWI710146B (zh) | 發光元件封裝結構 | |
| KR20140004351A (ko) | 발광 다이오드 패키지 | |
| JP6427816B2 (ja) | 発光ダイオードの色変換用基板及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20841313 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 20841313 Country of ref document: EP Kind code of ref document: A1 |