WO2018131474A1 - 蒸着マスク、蒸着マスク装置の製造方法および蒸着マスクの製造方法 - Google Patents

蒸着マスク、蒸着マスク装置の製造方法および蒸着マスクの製造方法 Download PDF

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Publication number
WO2018131474A1
WO2018131474A1 PCT/JP2017/046751 JP2017046751W WO2018131474A1 WO 2018131474 A1 WO2018131474 A1 WO 2018131474A1 JP 2017046751 W JP2017046751 W JP 2017046751W WO 2018131474 A1 WO2018131474 A1 WO 2018131474A1
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WIPO (PCT)
Prior art keywords
vapor deposition
deposition mask
point
dimension
metal plate
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Application number
PCT/JP2017/046751
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English (en)
French (fr)
Japanese (ja)
Inventor
知加雄 池永
Original Assignee
大日本印刷株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from JP2017238092A external-priority patent/JP6376483B2/ja
Application filed by 大日本印刷株式会社 filed Critical 大日本印刷株式会社
Priority to KR1020207030539A priority Critical patent/KR102333411B1/ko
Priority to KR1020187031082A priority patent/KR102172009B1/ko
Priority to US16/096,480 priority patent/US10991883B2/en
Priority to EP17891878.5A priority patent/EP3569730B1/en
Publication of WO2018131474A1 publication Critical patent/WO2018131474A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils

Definitions

  • the present invention relates to a deposition mask, a method for manufacturing a deposition mask apparatus, and a method for manufacturing a deposition mask.
  • display devices used in portable devices such as smartphones and tablet PCs are required to have high definition, for example, a pixel density of 500 ppi or more.
  • the pixel density of the display device is required to be, for example, 800 ppi or more.
  • organic EL display devices are attracting attention because of their excellent responsiveness, low power consumption, and high contrast.
  • a method of forming pixels of an organic EL display device a method of forming pixels with a desired pattern using a vapor deposition mask in which through holes arranged in a desired pattern are formed is known. Specifically, first, a deposition mask is brought into intimate contact with a substrate for an organic EL display device, and then the deposited deposition mask and the substrate are both put into a deposition apparatus to deposit an organic material on the substrate. I do.
  • a deposition mask is brought into intimate contact with a substrate for an organic EL display device, and then the deposited deposition mask and the substrate are both put into a deposition apparatus to deposit an organic material on the substrate. I do.
  • it is required to accurately reproduce the position and shape of the through hole of the vapor deposition mask according to the design.
  • a method of forming a through hole in a metal plate by etching using a photolithography technique is known. For example, first, a first resist pattern is formed on the first surface of the metal plate by exposure / development processing, and a second resist pattern is formed on the second surface of the metal plate by exposure / development processing. Next, a region of the first surface of the metal plate that is not covered with the first resist pattern is etched to form a first opening in the first surface of the metal plate. Thereafter, a region of the second surface of the metal plate that is not covered with the second resist pattern is etched to form a second opening in the second surface of the metal plate.
  • the metal plate for producing the vapor deposition mask is obtained, for example, by rolling a base material such as an iron alloy.
  • a method for manufacturing a vapor deposition mask for example, as disclosed in Patent Document 2, a method for manufacturing a vapor deposition mask using a plating process is known.
  • a conductive substrate is prepared.
  • a resist pattern arranged with a predetermined gap is formed on the substrate by exposure / development processing.
  • This resist pattern is provided at a position where a through hole of the vapor deposition mask is to be formed.
  • a plating solution is supplied to the gap between the resist patterns, and a metal layer is deposited on the substrate by electrolytic plating. Thereafter, by separating the metal layer from the substrate, it is possible to obtain a vapor deposition mask in which a plurality of through holes are formed.
  • the vapor deposition material adheres not only to the substrate but also to the vapor deposition mask.
  • some vapor deposition materials are directed to the substrate along a direction that is largely inclined with respect to the normal direction of the vapor deposition mask, but such vapor deposition material is vapor deposited before reaching the substrate. It reaches the wall surface of the through hole of the mask and adheres. In this case, the vapor deposition material is less likely to adhere to the region of the substrate located near the wall surface of the through hole of the vapor deposition mask. As a result, the thickness of the deposited vapor deposition material may be smaller than other portions.
  • the thickness of the metal plate used for manufacturing the vapor deposition mask it is conceivable to reduce the thickness of the metal plate used for manufacturing the vapor deposition mask. Because, by reducing the thickness of the metal plate, the height of the wall surface of the through hole of the vapor deposition mask can be reduced, thereby reducing the proportion of the vapor deposition material that adheres to the wall surface of the through hole. Because you can.
  • a rolled material obtained by rolling a base material to a predetermined thickness may be used for the metal plate used for producing the vapor deposition mask.
  • the rolling rate is a value calculated by (base material thickness ⁇ metal plate thickness) / (base material thickness).
  • the elongation percentage of the metal plate varies depending on the position in the width direction (direction perpendicular to the conveyance direction of the base material).
  • transformation based on rolling may become large, so that a rolling rate is large. For this reason, it is known that a corrugated shape appears in a metal plate rolled at a large rolling rate.
  • corrugated shape formed at the side edge in the width direction of the metal plate which is called ear extension.
  • corrugated shape formed in the center in the width direction of a metal plate called medium elongation is mentioned. Even when heat treatment such as annealing is performed after rolling, such a wavy shape can appear.
  • a metal plate having a predetermined thickness may be produced by a foil making process using plating.
  • the thickness of the metal plate to be manufactured can be non-uniform.
  • a similar wavy shape may appear at the side edge in the width direction of the metal plate.
  • the elongation of the vapor deposition mask differs in the width direction, and thus the position of the through hole may be shifted. More specifically, when the corrugated shape of the metal plate is formed as a vapor deposition mask, the dimension in the longitudinal direction is longer than the portion of the corrugated shape that is small.
  • the vapor deposition mask is stretched by applying a tensile force to the first position portion and the second position portion which are different from each other in the width direction.
  • the longitudinal length of the vapor deposition mask in the first position portion is shorter than the longitudinal length in the second position portion, the longitudinal length of the first position portion is equal to the longitudinal length of the second position portion.
  • a tensile force is applied to the vapor deposition mask.
  • a 1st position part may extend largely rather than a 2nd position part, and the longitudinal direction center part of a vapor deposition mask may shift
  • the position of the through hole of the vapor deposition mask at the time of stretching is displaced, the position of the vapor deposition material deposited on the substrate through this through hole is displaced, and the dimensional accuracy and position of the pixel of the organic EL display device The accuracy may be reduced.
  • the present invention has been made in consideration of such problems, and provides a vapor deposition mask, a vapor deposition mask device manufacturing method, and a vapor deposition mask manufacturing method capable of improving the positional accuracy of a through-hole when stretched.
  • the purpose is to do.
  • the present invention A vapor deposition mask extending in a first direction, A central axis extending in the first direction and disposed at a central position in a second direction perpendicular to the first direction; P1 point and Q1 point provided on one side of the central axis and spaced apart from each other along the first direction; P2 point and Q2 point provided on the other side of the central axis and spaced apart from each other along the first direction,
  • the P1 point and the P2 point are intended to be arranged symmetrically with respect to the central axis during vapor deposition,
  • the Q1 point and the Q2 point are intended to be arranged symmetrically with respect to the central axis during vapor deposition, Wherein the dimensions from point P1 to the Q1 points and X1, the dimension from the point P2 to the point Q2 and X2, when a predetermined value set to alpha X, And Meets the vapor deposition mask, It is.
  • a first ear and a second ear constituting a pair of ends in the first direction;
  • a plurality of through holes provided between the first ear portion and the second ear portion, and through which the vapor deposition material passes during vapor deposition;
  • the P1 point and the P2 point are positioned at the center point of the corresponding through hole formed on the first ear portion side,
  • the Q1 point and the Q2 point are positioned at the center point of the corresponding through hole formed on the second ear portion side, You may do it.
  • a plurality of effective areas in which the through holes are formed are provided between the first ear and the second ear,
  • the plurality of effective areas have a first effective area and a second effective area arranged along the first direction of the vapor deposition mask,
  • the first effective area is arranged on the first ear part side
  • the second effective area is arranged on the second ear part side
  • the P1 point and the P2 point are positioned at the center point of the corresponding through-hole formed in the first effective region
  • the Q1 point and the Q2 point are positioned at the center point of the corresponding through-hole formed in the second effective region, You may do it.
  • the first effective area is arranged closest to the first ear portion among the plurality of effective areas
  • the second effective area is arranged closest to the second ear portion among the plurality of effective areas. You may do it.
  • the through holes corresponding to the P1 point and the P2 point are respectively formed on the first ear portion side of the plurality of through holes,
  • the through holes corresponding to the Q1 point and the Q2 point are respectively formed on the second ear portion side most among the plurality of through holes. You may do it.
  • the present invention Preparing the above-described vapor deposition mask; Applying a tension to the vapor deposition mask in the first direction to stretch the vapor deposition mask on a frame, and a method of manufacturing a vapor deposition mask device, It is.
  • the present invention A step of preparing the vapor deposition mask device by the method of manufacturing the vapor deposition mask device described above; Adhering the vapor deposition mask of the vapor deposition mask device to a substrate; Depositing a deposition material on the substrate through a through-hole of the deposition mask, and a deposition method, It is.
  • the present invention A deposition mask extending in a first direction, extending in the first direction and disposed at a central position in a second direction perpendicular to the first direction; provided on one side of the central axis; P1 and Q1 points spaced apart from each other along the first direction, and P2 points and Q2 points provided on the other side of the central axis and spaced apart from each other along the first direction, the P1 point,
  • the point P2 is intended to be arranged symmetrically with respect to the central axis during vapor deposition, and the point Q1 and the point Q2 are arranged symmetrically with respect to the central axis during vapor deposition.
  • a method of manufacturing a vapor deposition mask intended for A production process for producing the vapor deposition mask A measuring step of measuring a dimension X1 from the P1 point to the Q1 point and a dimension X2 from the P2 point to the Q2 point; When the dimension X1 and the dimension X2 measured in the measurement step are set to ⁇ X as a predetermined value, And And a determination step of determining whether or not the above condition is satisfied.
  • FIG. 5 is a sectional view taken along line VV in FIG. 4.
  • FIG. 5 is a cross-sectional view taken along line VI-VI in FIG. 4.
  • FIG. 7 is a sectional view taken along line VII-VII in FIG. 4. It is sectional drawing which expands and shows the through-hole shown in FIG.
  • FIG. 1 shows a 1st surface etching process. It is a figure which shows the process of coat
  • FIGS. 1 to 28 are diagrams for explaining one embodiment of the present invention.
  • a method for manufacturing a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as an example.
  • the present invention can be applied to vapor deposition masks used for various purposes without being limited to such applications.
  • the terms “plate”, “sheet”, and “film” are not distinguished from each other based only on the difference in names.
  • the “plate” is a concept including a member that can be called a sheet or a film.
  • plate surface (sheet surface, film surface)
  • sheet surface means a target plate-like member (sheet-like) when the target plate-like (sheet-like, film-like) member is viewed as a whole and globally. It refers to the surface that coincides with the plane direction of the member or film-like member.
  • the normal direction used with respect to a plate-like (sheet-like, film-like) member refers to the normal direction with respect to the plate
  • the shape, geometric conditions and physical characteristics and their degree are specified, for example, terms such as “parallel”, “orthogonal”, “identical”, “equivalent”, lengths and angles
  • values of physical characteristics and the like are not limited to a strict meaning and are interpreted to include a range where a similar function can be expected.
  • the vapor deposition apparatus 90 which performs the vapor deposition process which vapor-deposits a vapor deposition material on a target object is demonstrated with reference to FIG.
  • the vapor deposition apparatus 90 includes a vapor deposition source (for example, a crucible 94), a heater 96, and a vapor deposition mask apparatus 10 therein.
  • the vapor deposition apparatus 90 further includes exhaust means for making the inside of the vapor deposition apparatus 90 a vacuum atmosphere.
  • the crucible 94 contains a vapor deposition material 98 such as an organic light emitting material.
  • the heater 96 heats the crucible 94 to evaporate the vapor deposition material 98 under a vacuum atmosphere.
  • the vapor deposition mask device 10 is disposed so as to face the crucible 94.
  • the vapor deposition mask device 10 includes a vapor deposition mask 20 and a frame 15 that supports the vapor deposition mask 20.
  • the frame 15 supports the vapor deposition mask 20 in a state of being pulled in the surface direction so that the vapor deposition mask 20 is not bent.
  • the vapor deposition mask device 10 is disposed in the vapor deposition device 90 so that the vapor deposition mask 20 faces a substrate, for example, an organic EL substrate 92, to which the vapor deposition material 98 is attached.
  • first surface 20a the surface on the organic EL substrate 92 side
  • second surface 20b the surface located on the opposite side of the first surface 20a
  • the vapor deposition mask device 10 may include a magnet 93 disposed on the surface of the organic EL substrate 92 opposite to the vapor deposition mask 20 as shown in FIG. By providing the magnet 93, the vapor deposition mask 20 can be brought close to the organic EL substrate 92 by attracting the vapor deposition mask 20 to the magnet 93 side by magnetic force.
  • FIG. 3 is a plan view showing the vapor deposition mask device 10 as viewed from the first surface 20a side of the vapor deposition mask 20.
  • the vapor deposition mask device 10 includes a plurality of vapor deposition masks 20 having a substantially rectangular shape in plan view, and each vapor deposition mask 20 has a pair of end portions 26 a in the longitudinal direction D ⁇ b> 1 of the vapor deposition mask 20. 26b, it is fixed to the frame 15.
  • the vapor deposition mask 20 includes a metal plate in which a plurality of through holes 25 penetrating the vapor deposition mask 20 are formed.
  • the vapor deposition material 98 that has evaporated from the crucible 94 and reached the vapor deposition mask device 10 adheres to the organic EL substrate 92 through the through hole 25 of the vapor deposition mask 20. Thereby, the vapor deposition material 98 can be formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.
  • FIG. 2 is a cross-sectional view showing an organic EL display device 100 manufactured using the vapor deposition device 90 of FIG.
  • the organic EL display device 100 includes an organic EL substrate 92 and pixels including a vapor deposition material 98 provided in a pattern.
  • vapor deposition apparatuses 90 each equipped with a vapor deposition mask 20 corresponding to each color are prepared, and the organic EL substrate 92 is sequentially inserted into each vapor deposition apparatus 90.
  • an organic light emitting material for red, an organic light emitting material for green, and an organic light emitting material for blue can be sequentially deposited on the organic EL substrate 92.
  • the vapor deposition process may be performed inside the vapor deposition apparatus 90 which becomes a high temperature atmosphere.
  • the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 held inside the vapor deposition apparatus 90 are also heated during the vapor deposition process.
  • the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 exhibit dimensional change behavior based on their respective thermal expansion coefficients.
  • the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 and the organic EL substrate 92 are greatly different, a positional shift caused by a difference in their dimensional change occurs.
  • the vapor deposition mask 20 or the frame 15 adheres on the organic EL substrate 92.
  • the dimensional accuracy and position accuracy of the vapor deposition material will decrease.
  • the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 are equal to the thermal expansion coefficient of the organic EL substrate 92.
  • an iron alloy containing nickel can be used as the main material of the vapor deposition mask 20 and the frame 15.
  • an iron alloy containing 30% by mass or more and 54% by mass or less of nickel can be used as the material of the metal plate constituting the vapor deposition mask 20.
  • the iron alloy containing nickel examples include an invar material containing nickel of 34% by mass or more and 38% by mass or less, a super invar material containing cobalt in addition to 30% by mass or more and 34% by mass or less of nickel, 38 Examples thereof include a low thermal expansion Fe—Ni-based plating alloy containing nickel of not less than mass% and not more than 54 mass%.
  • the thermal expansion coefficient of the vapor deposition mask 20 and the frame 15 is set as the thermal expansion coefficient of the organic EL substrate 92.
  • a material other than the above-described iron alloy may be used as a material constituting the vapor deposition mask 20.
  • an iron alloy other than the above-described iron alloy containing nickel such as an iron alloy containing chromium
  • an iron alloy called so-called stainless steel can be used.
  • alloys other than iron alloys such as nickel and nickel-cobalt alloys may be used.
  • the vapor deposition mask 20 includes a pair of ear portions (first ear portions 17 a) constituting a pair of end portions (first end portion 26 a and second end portion 26 b) in the longitudinal direction D ⁇ b> 1 of the vapor deposition mask 20. And a second ear portion 17b) and an intermediate portion 18 located between the pair of ear portions 17a and 17b.
  • the ears 17a and 17b are portions fixed to the frame 15 in the vapor deposition mask 20. In the present embodiment, it is configured integrally with the intermediate portion 18. In addition, the ear
  • the intermediate portion 18 includes an effective region 22 in which a through hole 25 extending from the first surface 20 a to the second surface 20 b is formed, and a peripheral region 23 that is located around the effective region 22 and surrounds the effective region 22.
  • the effective area 22 is an area facing the display area of the organic EL substrate 92 in the vapor deposition mask 20.
  • the intermediate portion 18 includes a plurality of effective regions 22 arranged at predetermined intervals along the longitudinal direction D1 of the vapor deposition mask 20.
  • One effective area 22 corresponds to the display area of one organic EL display device 100. For this reason, according to the vapor deposition mask apparatus 10 shown in FIG. 1, the multi-surface vapor deposition of the organic EL display apparatus 100 is possible.
  • the effective region 22 has, for example, a substantially rectangular shape in a plan view, and more precisely, a substantially rectangular shape in a plan view.
  • each effective region 22 can have various shapes of contours according to the shape of the display region of the organic EL substrate 92.
  • each effective area 22 may have a circular outline.
  • FIG. 4 is an enlarged plan view showing the effective region 22 from the second surface 20 b side of the vapor deposition mask 20.
  • the plurality of through holes 25 formed in each effective region 22 are arranged at predetermined pitches along two directions orthogonal to each other in the effective region 22. Yes.
  • An example of the through hole 25 will be described in more detail with reference mainly to FIGS. 5 to 7 are sectional views taken along the VV direction to the VII-VII direction of the effective region 22 shown in FIG.
  • the plurality of through holes 25 extend along the normal direction N of the vapor deposition mask 20 from the first surface 20 a on one side along the normal direction N of the vapor deposition mask 20. It penetrates to the second surface 20b on the other side.
  • a first recess 30 is formed by etching on the first surface 21a of the metal plate 21 on one side in the normal direction N of the deposition mask 20, and the deposition mask 20
  • a second recess 35 is formed on the second surface 21 b of the metal plate 21 on the other side in the normal direction N.
  • the 1st recessed part 30 is connected to the 2nd recessed part 35, and is formed so that the 2nd recessed part 35 and the 1st recessed part 30 may mutually communicate by this.
  • the through hole 25 is configured by a second recess 35 and a first recess 30 connected to the second recess 35.
  • the plate of the vapor deposition mask 20 at each position along the normal direction N of the vapor deposition mask 20 from the second surface 20b side of the vapor deposition mask 20 toward the first surface 20a side.
  • the opening area of each second recess 35 in the cross section along the plane is gradually reduced.
  • the opening area of each first recess 30 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction N of the vapor deposition mask 20 is from the first surface 20a side of the vapor deposition mask 20. It gradually becomes smaller toward the second surface 20b.
  • the wall surface 31 of the first recess 30 and the wall surface 36 of the second recess 35 are connected via a circumferential connecting portion 41.
  • the connection portion 41 the wall surface 31 of the first recess 30 inclined with respect to the normal direction N of the vapor deposition mask 20 and the wall surface 36 of the second recess 35 inclined with respect to the normal direction N of the vapor deposition mask 20 merge. It is defined by the ridgeline of the overhanging part.
  • the connection part 41 defines the penetration part 42 with which the opening area of the through-hole 25 becomes the minimum in the planar view of the vapor deposition mask 20.
  • two adjacent through holes 25 are formed on the other surface along the normal direction N of the vapor deposition mask 20, that is, on the first surface 20 a of the vapor deposition mask 20. They are separated from each other along the plate surface of the mask 20. That is, when the metal plate 21 is etched from the side of the first surface 21a of the metal plate 21 corresponding to the first surface 20a of the vapor deposition mask 20 as in the manufacturing method described later, the first recess 30 is produced. The first surface 21 a of the metal plate 21 remains between two adjacent first recesses 30.
  • two adjacent second concave portions on one side along the normal direction N of the vapor deposition mask 20, that is, on the second surface 20 b side of the vapor deposition mask 20. 35 may be separated from each other along the plate surface of the vapor deposition mask 20. That is, the second surface 21b of the metal plate 21 may remain between two adjacent second recesses 35.
  • the portion of the effective area 22 of the second surface 21 b of the metal plate 21 that remains without being etched is also referred to as a top portion 43.
  • the vapor deposition mask 20 is manufactured so that the width ⁇ of the top portion 43 does not become excessively large.
  • the width ⁇ of the top part 43 is preferably 2 ⁇ m or less.
  • the width ⁇ of the top portion 43 generally varies depending on the direction in which the vapor deposition mask 20 is cut.
  • the widths ⁇ of the top portions 43 shown in FIGS. 5 and 7 may be different from each other.
  • the vapor deposition mask 20 may be configured such that the width ⁇ of the top portion 43 is 2 ⁇ m or less when the vapor deposition mask 20 is cut in any direction.
  • etching may be performed so that two adjacent second recesses 35 are connected. That is, a place where the second surface 21b of the metal plate 21 does not remain may exist between two adjacent second recesses 35. Although not shown, the etching may be performed so that two adjacent second recesses 35 are connected over the entire area of the second surface 21b.
  • the first surface 20 a of the vapor deposition mask 20 faces the organic EL substrate 92 as shown by a two-dot chain line in FIG. 5.
  • the second surface 20 b of the vapor deposition mask 20 is located on the crucible 94 side that holds the vapor deposition material 98. Therefore, the vapor deposition material 98 adheres to the organic EL substrate 92 through the second recess 35 whose opening area is gradually reduced.
  • FIG. 1 the first surface 20 a of the vapor deposition mask 20 faces the organic EL substrate 92 as shown by a two-dot chain line in FIG. 5.
  • the second surface 20 b of the vapor deposition mask 20 is located on the crucible 94 side that holds the vapor deposition material 98. Therefore, the vapor deposition material 98 adheres to the organic EL substrate 92 through the second recess 35 whose opening area is gradually reduced.
  • the deposition material 98 moves along the normal direction N of the organic EL substrate 92 from the crucible 94 toward the organic EL substrate 92 as indicated by an arrow from the second surface 20 b side to the first surface 20 a.
  • the organic EL substrate 92 may move in a direction greatly inclined with respect to the normal direction N of the organic EL substrate 92.
  • the thickness t of the vapor deposition mask 20 is reduced, thereby reducing the height of the wall surface 36 of the second recess 35 and the wall surface 31 of the first recess 30. It is considered preferable. That is, it can be said that it is preferable to use a metal plate 21 having a thickness t as small as possible as long as the strength of the vapor deposition mask 20 can be secured as the metal plate 21 for constituting the vapor deposition mask 20.
  • the thickness t of the vapor deposition mask 20 is preferably set to 85 ⁇ m or less, for example, 5 ⁇ m or more and 85 ⁇ m or less.
  • the thickness t is the thickness of the surrounding region 23, that is, the thickness of the portion of the vapor deposition mask 20 where the first recess 30 and the second recess 35 are not formed. Therefore, it can be said that the thickness t is the thickness of the metal plate 21.
  • a straight line L ⁇ b> 1 that passes through the connection portion 41, which is a portion having the minimum opening area of the through hole 25, and another arbitrary position of the wall surface 36 of the second recess 35 is a normal direction of the vapor deposition mask 20.
  • the minimum angle made with respect to N is represented by the symbol ⁇ 1.
  • symbol ⁇ represents the width of a portion (hereinafter also referred to as a rib portion) of the effective region 22 of the first surface 21 a of the metal plate 21 that remains without being etched.
  • the width ⁇ of the rib part and the dimension r 2 of the through part 42 are appropriately determined according to the dimension of the organic EL display device and the number of display pixels.
  • Table 1 shows an example of the number of display pixels and the value of the width ⁇ of the rib portion and the dimension r 2 of the through portion 42 obtained in accordance with the number of display pixels and the number of display pixels in the 5-inch organic EL display device.
  • the vapor deposition mask 20 according to the present embodiment is particularly effective when an organic EL display device having a pixel density of 450 ppi or more is manufactured.
  • an example of the dimensions of the vapor deposition mask 20 required for producing such an organic EL display device having a high pixel density will be described with reference to FIG.
  • FIG. 8 is an enlarged cross-sectional view of the through hole 25 of the vapor deposition mask 20 shown in FIG.
  • the distance from the first surface 20 a of the vapor deposition mask 20 to the connection portion 41 in the direction along the normal direction N of the vapor deposition mask 20, that is, the first concave portion. the height of the wall 31 of the 30 is represented by reference numeral r 1.
  • the first recess 30 dimensions of the first recess 30 in the portion connected to the second recess 35, i.e. the dimension of the through region 42 is represented by reference numeral r 2.
  • the angle formed by the straight line L2 connecting the connecting portion 41 and the leading edge of the first recess 30 on the first surface 21a of the metal plate 21 with respect to the normal direction N of the metal plate 21 is It is represented by the symbol ⁇ 2.
  • the dimension r 2 of the through portion 42 is preferably set to 10 or more and 60 ⁇ m or less. Accordingly, it is possible to provide the vapor deposition mask 20 that can produce an organic EL display device having a high pixel density.
  • the height r 1 of the wall surface 31 of the first recess 30 is set to 6 ⁇ m or less.
  • the angle ⁇ 2 it is possible to suppress the vapor deposition material 98 that has come through at a large inclination angle and passed through the through portion 42 from adhering to the organic EL substrate 92. It can suppress that the vapor deposition material 98 adheres to a part outside the part which overlaps the penetration part 42 among these. That is, reducing the angle ⁇ 2 leads to suppression of variations in the area and thickness of the vapor deposition material 98 attached to the organic EL substrate 92. From such a viewpoint, for example, the through hole 25 is formed such that the angle ⁇ 2 is 45 degrees or less. In FIG.
  • the dimension of the first recess 30 in the first surface 21a that is, the opening dimension of the through hole 25 in the first surface 21a is larger than the dimension r2 of the first recess 30 in the connection part 41.
  • An example is shown. That is, the example in which the value of the angle ⁇ 2 is a positive value is shown.
  • the dimension r2 of the first recess 30 in the connection part 41 may be larger than the dimension of the first recess 30 in the first surface 21a. That is, the value of the angle ⁇ 2 may be a negative value.
  • the vapor deposition mask 20 is longitudinally extended from the 1st ear
  • the longitudinal direction D1 is a direction parallel to the conveying direction when the base material 55 (see FIG. 10) is rolled, and is the longitudinal direction of the vapor deposition mask 20 in which a plurality of effective regions 22 are arranged.
  • the term “conveyance” is used to mean the conveyance of the base material 55 by roll-to-roll as will be described later.
  • a width direction D2 (second direction) described later is a direction orthogonal to the longitudinal direction D1 in the surface direction of the metal plate 21 or the long metal plate 64.
  • the vapor deposition mask 20 has the central axis AL extended in the longitudinal direction D1 and arrange
  • the center axis AL passes through the center point of the center through hole 25 in the width direction D2.
  • the central axis AL passes through an intermediate point between two adjacent through holes 25 in the vicinity of the center in the width direction D2.
  • Evaporation mask 20 as shown in FIG. 9, the dimensions of up to Q1 points from point P1 to be described later as X1, the dimension from the point P2 to the point Q2 and X2, the predetermined value was set to alpha X When And Meet.
  • the left side of the formula (1) means the absolute value of the average value of the difference between the predetermined value and the dimension X1 and the difference between the predetermined value and the dimension X2.
  • the left side of Expression (2) means the absolute value of the difference between the dimension X1 and the dimension X2.
  • the points P1 and Q1 are provided on one side (left side in FIG. 9) of the central axis AL of the vapor deposition mask 20, and are separated from each other along the longitudinal direction D1.
  • the points P2 and Q2 are provided on the other side (right side in FIG. 9) of the central axis AL of the vapor deposition mask 20, and are separated from each other along the longitudinal direction D1.
  • the points P1 and P2 are arranged symmetrically with respect to the central axis AL during vapor deposition. More specifically, the points P1 and P2 are intended to be arranged symmetrically with respect to the central axis AL at the time of vapor deposition, and are symmetrical with respect to the central axis AL at the time of design. It is a point to be placed. Similarly, the points Q1 and Q2 are arranged symmetrically with respect to the central axis AL during vapor deposition.
  • the points P1, Q1, P2, and Q2 are positioned at the center points of the corresponding through-holes 25 provided between the first ear portion 17a and the second ear portion 17b. It has been. That is, in the present embodiment, the plurality of effective areas 22 are the first effective area 22A arranged closest to the first ear portion 17a and the second effective area arranged closest to the second ear portion 17b. 22B. The points P1 and P2 are positioned at the center point of the through hole 25 formed in the first effective region 22A. And the through-hole 25 corresponding to P1 point and P2 point is formed in the 1st ear
  • the points Q1 and Q2 are positioned at the center point of the through hole 25 formed in the second effective region 22B.
  • the through-hole 25 corresponding to Q1 point and Q2 point is formed in the 2nd ear
  • the dimension X1 means the linear distance between the point P1 and the point Q1 of the vapor deposition mask 20 placed on the stage 81 or the like, which will be described later
  • the dimension X2 is the distance between the point P2 and the point Q2 of the vapor deposition mask 20. It means the straight line distance between.
  • the vapor deposition mask 20 placed on the stage 81 or the like is curved in a C shape as will be described later (see FIG. 24), which will be described in detail later.
  • the through hole 25 corresponding to the point P1 and the point Q1 is positioned closest to the first side edge 27a, and the through hole 25 corresponding to the point P2 and the point Q2 is closest to the second side edge 27b. Is positioned.
  • the predetermined value ⁇ X shown in Expression (1) may be a design value (or specification value).
  • ⁇ X is a design value of the dimension X1 and also a design value of the dimension X2. This is because the dimension X1 and the dimension X2 are the same because the P1, Q1, P2, and Q2 points are positioned symmetrically with respect to the central axis AL of the vapor deposition mask 20 at the time of design.
  • the design value is a numerical value set with the intention that the through-hole 25 is arranged at a desired position (deposition target position) when stretched on the frame 15, and at the time of non-stretching. It is a numerical value.
  • a base material 55 made of an iron alloy containing nickel is prepared, and this base material 55 is indicated by an arrow D1 toward a rolling device 56 including a pair of rolling rolls 56a and 56b. Transport along the direction.
  • the base material 55 that has reached between the pair of rolling rolls 56a and 56b is rolled by the pair of rolling rolls 56a and 56b.
  • the base material 55 is reduced in thickness and stretched along the conveying direction. It is.
  • the wound body 62 may be formed by winding the plate material 64 ⁇ / b> X around the core 61.
  • the specific value of the thickness t 0 is preferably 5 ⁇ m or more and 85 ⁇ m or less as described above.
  • FIG. 10 is only what shows the outline of a rolling process, and the specific structure and procedure for implementing a rolling process are not specifically limited.
  • the rolling process includes a hot rolling process in which the base material is processed at a temperature equal to or higher than a temperature at which the crystal arrangement of the invar material constituting the base material 55 is changed, and a base material at a temperature lower than the temperature at which the crystal arrangement of the invar material is changed. It may include a cold rolling process for processing.
  • plate material 64X between a pair of rolling rolls 56a and 56b is not restricted to one direction. For example, in FIGS.
  • the base material 55 and the plate material 64X are repeatedly passed between the pair of rolling rolls 56a and 56b in the direction from the left side to the right side of the drawing and from the right side to the left side of the drawing.
  • the material 55 and the plate material 64X may be gradually rolled.
  • the plate material 64X is annealed using an annealing device 57, whereby the long metal plate 64 is obtained.
  • the annealing step may be performed while pulling the plate material 64X or the long metal plate 64 in the transport direction (longitudinal direction). That is, the annealing step may be performed as continuous annealing while being conveyed, not so-called batch-type annealing.
  • the annealing step described above is performed in a non-reducing atmosphere or an inert gas atmosphere.
  • the non-reducing atmosphere is an atmosphere that does not contain a reducing gas such as hydrogen. “Does not contain reducing gas” means that the concentration of reducing gas such as hydrogen is 4% or less.
  • the inert gas atmosphere is an atmosphere in which 90% or more of inert gas such as argon gas, helium gas, and nitrogen gas exists.
  • the thickness t 0 is usually equal to the thickness t of the vapor deposition mask 20.
  • the rolling step described above by repeating several times the slit step and the annealing step may be manufactured of metal plate 64 elongated in the thickness t 0.
  • FIG. 11 shows an example in which the annealing process is performed while pulling the long metal plate 64 in the longitudinal direction.
  • the annealing process is not limited to this, and the long metal plate 64 has the core 61. You may implement in the state wound up by. That is, batch-type annealing may be performed.
  • the annealing process is performed in a state where the long metal plate 64 is wound around the core 61, the long metal plate 64 may be warped with warping according to the winding diameter of the wound body 62. . Therefore, depending on the winding diameter of the wound body 62 and the material constituting the base material 55, it is advantageous to perform the annealing step while pulling the long metal plate 64 in the longitudinal direction.
  • both ends of the long metal plate 64 in the width direction are cut off over a predetermined range, thereby performing a cutting step of adjusting the width of the long metal plate 64 to a desired width. In this way, a long metal plate 64 having a desired thickness and width can be obtained.
  • a method for manufacturing a deposition mask 20 by using a long metal plate 64 will be described mainly with reference to FIGS. 12 to 20.
  • a long metal plate 64 is supplied, a through hole 25 is formed in the long metal plate 64, and the long metal plate 64 is further cut. By doing so, the vapor deposition mask 20 which consists of the sheet-like metal plate 21 is obtained.
  • the manufacturing method of the vapor deposition mask 20 the step of supplying a long metal plate 64 extending in a strip shape, and etching using a photolithography technique are performed on the long metal plate 64, and the long metal plate A step of forming the first recess 30 in the first surface 64a from the side of the first surface 64a and etching using a photolithography technique are performed on the long metal plate 64, and the long metal plate 64 is subjected to the second step from the second surface 64b side. Forming the two recesses 35. And the 1st recessed part 30 and the 2nd recessed part 35 which were formed in the elongate metal plate 64 mutually communicate, and the through-hole 25 is produced in the elongate metal plate 64.
  • the formation process of the first recess 30 is performed before the formation process of the second recess 35, and the formation process of the first recess 30 and the formation of the second recess 35 are performed.
  • a step of sealing the manufactured first recess 30 is further provided between the steps. Details of each step will be described below.
  • FIG. 12 shows a manufacturing apparatus 60 for producing the vapor deposition mask 20.
  • a wound body (metal plate roll) 62 obtained by winding a long metal plate 64 around a core 61 is prepared.
  • a long metal plate 64 extending in a strip shape is supplied as shown in FIG.
  • the long metal plate 64 is formed with the through-hole 25 to form the sheet metal plate 21 and the vapor deposition mask 20.
  • etching apparatus etching means
  • transport roller 72 transport roller 72.
  • etching apparatus 70 etching means
  • a plurality of vapor deposition masks 20 are assigned in the width direction of the long metal plate 64. That is, the plurality of vapor deposition masks 20 are produced from regions that occupy predetermined positions of the long metal plate 64 in the longitudinal direction.
  • the plurality of vapor deposition masks 20 are assigned to the long metal plate 64 so that the longitudinal direction of the vapor deposition mask 20 matches the rolling direction of the long metal plate 64.
  • resist films 65 c and 65 d containing a negative photosensitive resist material are formed on the first surface 64 a and the second surface 64 b of the long metal plate 64.
  • a method of forming the resist films 65c and 65d a film on which a layer containing a photosensitive resist material such as an acrylic photo-curable resin is formed, a so-called dry film is formed on the first surface 64a of the long metal plate 64 and on the first surface 64a.
  • a method of pasting on the two surfaces 64b is employed.
  • exposure masks 68a and 68b are prepared so as not to transmit light to the regions to be removed of the resist films 65c and 65d.
  • the exposure masks 68a and 68b are respectively formed on the resist films 65c and 65d as shown in FIG. To place.
  • a glass dry plate that prevents light from being transmitted to regions to be removed of the resist films 65c and 65d is used.
  • the exposure masks 68a and 68b are sufficiently adhered to the resist films 65c and 65d by vacuum adhesion.
  • the photosensitive resist material a positive type may be used. In this case, an exposure mask in which light is transmitted through a region to be removed of the resist film is used as the exposure mask.
  • the resist films 65c and 65d are exposed through the exposure masks 68a and 68b (exposure process). Further, the resist films 65c and 65d are developed in order to form images on the exposed resist films 65c and 65d (development process).
  • the first resist pattern 65a is formed on the first surface 64a of the long metal plate 64
  • the second resist pattern is formed on the second surface 64b of the long metal plate 64.
  • 65b can be formed.
  • the developing process may include a resist heat treatment process for increasing the hardness of the resist films 65c and 65d, or for making the resist films 65c and 65d more firmly adhere to the long metal plate 64.
  • the resist heat treatment step is performed, for example, at 100 ° C. or higher and 400 ° C. or lower in an atmosphere of an inert gas such as argon gas, helium gas, or nitrogen gas.
  • a first surface etching process is performed in which a region of the first surface 64a of the long metal plate 64 that is not covered with the first resist pattern 65a is etched using a first etching solution.
  • the first etching liquid is directed from the nozzle disposed on the side facing the first surface 64a of the long metal plate 64 to be conveyed toward the first surface 64a of the long metal plate 64 through the first resist pattern 65a. Is injected.
  • erosion by the first etching solution proceeds in a region of the long metal plate 64 that is not covered with the first resist pattern 65a.
  • a large number of first recesses 30 are formed on the first surface 64 a of the long metal plate 64.
  • the first etching solution for example, a solution containing a ferric chloride solution and hydrochloric acid is used.
  • the first recess 30 is covered with a resin 69 having resistance to the second etching solution used in the subsequent second surface etching step. That is, the first recess 30 is sealed with the resin 69 having resistance to the second etching solution.
  • a film of resin 69 is formed so as to cover not only the formed first recess 30 but also the first surface 64a (first resist pattern 65a).
  • a region of the second surface 64b of the long metal plate 64 that is not covered with the second resist pattern 65b is etched to form a second recess 35 in the second surface 64b.
  • a two-sided etching process is performed.
  • the second surface etching process is performed until the first recess 30 and the second recess 35 communicate with each other, thereby forming the through hole 25.
  • the second etching solution for example, a solution containing a ferric chloride solution and hydrochloric acid is used in the same manner as the first etching solution.
  • the erosion by the second etching solution is performed in the portion of the long metal plate 64 that is in contact with the second etching solution. Therefore, erosion does not proceed only in the normal direction N (thickness direction) of the long metal plate 64 but also proceeds in the direction along the plate surface of the long metal plate 64.
  • N thickness direction
  • two second recesses 35 respectively formed at positions facing two adjacent holes 66a of the second resist pattern 65b are positioned between the two holes 66a. It ends before joining at the back side of the bridge portion 67a. Thereby, as shown in FIG. 19, the above-described top portion 43 can be left on the second surface 64 b of the long metal plate 64.
  • the resin 69 is removed from the long metal plate 64 as shown in FIG.
  • the resin 69 can be removed by using, for example, an alkaline stripping solution.
  • an alkaline stripping solution is used, the resist patterns 65a and 65b are removed simultaneously with the resin 69, as shown in FIG.
  • the resist patterns 65a and 65b may be removed separately from the resin 69 by using a remover different from the remover for removing the resin 69.
  • the long metal plate 64 in which a large number of through holes 25 are formed in this way is conveyed to a cutting device (cutting means) 73 by conveyance rollers 72 and 72 that rotate while the long metal plate 64 is sandwiched. Is done.
  • the supply core 61 described above is rotated through tension (tensile stress) acting on the long metal plate 64 by the rotation of the transport rollers 72 and 72, and the long metal plate 64 is supplied from the wound body 62. It is like that.
  • the long metal plate 64 in which a large number of through-holes 25 are formed is cut into a predetermined length and width by a cutting device 73, whereby the sheet metal plate 21 in which the large number of through-holes 25 are formed, that is, The vapor deposition mask 20 is obtained.
  • a method for determining the quality of the vapor deposition mask 20 by measuring the above-described dimensions X1 and X2 of the vapor deposition mask 20 will be described with reference to FIGS.
  • a method of measuring the dimensions X1 and X2 and determining the quality of the vapor deposition mask 20 based on the measurement result will be described. That is, by measuring the dimension X1 and the dimension X2, it is possible to detect whether or not the through hole 25 of the vapor deposition mask 20 is arranged as designed, and thereby the positional accuracy of the through hole 25 of the vapor deposition mask 20 is determined. Whether or not satisfies a predetermined criterion.
  • the long metal plate 64 at least partially has a corrugated shape resulting from the fact that the length in the longitudinal direction D1 varies depending on the position in the width direction D2. For example, a wavy shape appears at the side edge 64e extending along the longitudinal direction D1 of the long metal plate 64.
  • the exposure mask is brought into close contact with the resist films 65c and 65d on the long metal plate 64 by vacuum suction or the like. For this reason, due to the close contact with the exposure mask, the corrugated shape of the side edge 64e of the long metal plate 64 is compressed as shown in FIG. 22, and the long metal plate 64 becomes almost flat. In this state, as shown by a dotted line in FIG. 22, the resist films 65c and 65d provided on the long metal plate 64 are exposed in a predetermined pattern.
  • FIG. 23 is a diagram showing the long metal plate 64 in a state in which the plurality of vapor deposition masks 20 are assigned along the width direction D2 by being etched. As shown in FIG. 23, the deposition mask 20 that faces at least the side edge 64e of the long metal plate 64 among the three allocated deposition masks 20 is formed from a portion having a relatively large corrugated shape. In FIG.
  • reference numeral 27 a denotes a side edge (hereinafter referred to as the first edge) located on the center side of the long metal plate 64 among the side edges of the vapor deposition mask 20 assigned to face the side edge 64 e of the long metal plate 64. 1 side edge).
  • reference numeral 27 b represents a side edge (hereinafter referred to as a second side edge) that is located on the opposite side of the first side edge 27 a and faces the side edge 64 e of the long metal plate 64.
  • the portion on the second side edge 27b side has a corrugated shape larger than the portion on the first side edge 27a side. Formed from parts.
  • FIG. 24 is a plan view showing the vapor deposition mask 20 obtained by cutting out the vapor deposition mask 20 facing the side edge 64e of the long metal plate 64 from the long metal plate 64.
  • FIG. 24 As described above, when the portion on the second side edge 27b side of the vapor deposition mask 20 is formed from a portion having a wavy shape larger than the portion on the first side edge 27a side, The length in the longitudinal direction D1 of the side portion is longer than the length in the longitudinal direction D1 of the portion on the first side edge 27a side. That is, the dimension of the second side edge 27b (the dimension along the second side edge 27b) in the longitudinal direction D1 is larger than the dimension of the first side edge 27a (the dimension along the first side edge 27a).
  • the vapor deposition mask 20 has a curved shape that is convex in the direction from the first side edge 27a side to the second side edge 27b side.
  • a curved shape is also referred to as a C-shape.
  • the measurement of the dimension X1 and the dimension X2 of the vapor deposition mask 20 is performed without applying tension to the vapor deposition mask 20.
  • the quality determination method according to the present embodiment will be described.
  • FIG. 25 is a diagram showing a pass / fail judgment system that measures the dimensions of the vapor deposition mask 20 and judges pass / fail.
  • the pass / fail determination system 80 includes a stage 81 on which the vapor deposition mask 20 is placed, a dimension measuring device 82, and a determination device 83.
  • the dimension measuring device 82 includes, for example, a measurement camera (imaging unit) that is provided above the stage 81 and images the vapor deposition mask 20 to create an image. At least one of the stage 81 and the dimension measuring device 82 is movable with respect to each other. In the present embodiment, the stage 81 is stationary, and the dimension measuring device 82 is movable in two directions parallel to the stage 81 and orthogonal to each other and in a direction perpendicular to the stage 81. Thus, the dimension measuring device 82 can be moved to a desired position.
  • the pass / fail judgment system 80 may be configured such that the dimension measuring device 82 is stationary and the stage 81 is movable.
  • the measurement of the dimension of the vapor deposition mask 20 can be performed by different methods depending on the size of the portion of the vapor deposition mask 20 to be measured.
  • the measurement object When the dimension of the measurement object is relatively small (for example, when it is several hundred ⁇ m or less), the measurement object can be accommodated in the field of view of the measurement camera of the dimension measurement apparatus 82, so that the measurement camera is not moved. Measure the dimensions of the measurement object.
  • the dimension measuring device 82 calculates the dimension of the vapor deposition mask 20 based on the image captured by the measurement camera and the movement amount of the measurement camera (the movement amount when the stage 81 moves).
  • the determination device 83 determines whether or not the above-described equations (1) and (2) are satisfied based on the measurement result by dimension measuring device 82.
  • the determination device 83 includes an arithmetic device and a storage medium.
  • the arithmetic device is, for example, a CPU.
  • the storage medium is a memory such as a ROM or a RAM.
  • the determination device 83 performs the determination process of the dimension of the vapor deposition mask 20 by an arithmetic unit executing the program memorize
  • a measurement process for measuring the dimension X1 and the dimension X2 of the vapor deposition mask 20 is performed.
  • the vapor deposition mask 20 is gently placed on the stage 81.
  • the vapor deposition mask 20 is placed without being fixed to the stage 81. That is, no tension is applied to the vapor deposition mask 20.
  • the vapor deposition mask 20 placed on the stage 81 can be curved in a C shape as shown in FIG. 24, for example.
  • the dimensions X1 and X2 (see FIG. 24) of the vapor deposition mask 20 on the stage 81 are measured.
  • the P1, Q1, P2, and Q2 points of the vapor deposition mask 20 are imaged by the measurement camera of the above-described dimension measuring device 82 shown in FIG. 25, and the captured image and the measurement camera move.
  • the coordinates of points P1, Q1, P2, and Q2 are calculated.
  • a dimension X1 that is a linear distance from the point P1 to the point Q1 and a dimension X2 that is a linear distance from the point P2 to the point Q2 are calculated.
  • a determination step is performed to determine whether the calculated dimension X1 and dimension X2 satisfy the above-described expressions (1) and (2).
  • the is substituted into equation (1) in which the distance X1 and dimension X2 calculated as described above described above, the design value is substituted into alpha X, the left side of the equation (1) is calculated as an absolute value . It is determined whether the value on the left side is 40 ⁇ m or less.
  • the calculated dimension X1 and dimension X2 are substituted into the above-described equation (2), the left side of equation (2) is calculated as an absolute value, and whether the value on the left side is 60 ⁇ m or less. Is determined.
  • the vapor deposition mask 20 satisfying the expressions (1) and (2) is determined as a non-defective product (pass) and used in the vapor deposition mask apparatus 10 described later.
  • a method of manufacturing the vapor deposition mask device 10 using the vapor deposition mask 20 determined as a non-defective product will be described.
  • a plurality of vapor deposition masks 20 are stretched on the frame 15. More specifically, tension in the longitudinal direction D ⁇ b> 1 of the deposition mask 20 is applied to the deposition mask 20, and the ears 17 a and 17 b of the deposition mask 20 in a state where the tension is applied are fixed to the frame 15.
  • the ears 17a and 17b are fixed to the frame 15 by spot welding, for example.
  • the first end portion 26a of the vapor deposition mask 20 is held by the first clamp 86a and the second clamp 86b disposed on both sides of the central axis AL, and the second end portion 26b. Is held by the third clamp 86c and the fourth clamp 86d disposed on both sides of the central axis AL.
  • a first tension portion 87a is connected to the first clamp 86a, and a second tension portion 87b is connected to the second clamp 86b.
  • a third tension portion 87c is connected to the third clamp 86c, and a fourth tension portion 87d is connected to the fourth clamp 86d.
  • the first tension portion 87a and the second tension portion 87b are driven, and the first clamp 86a and the second clamp 86b are moved with respect to the third clamp 86c and the fourth clamp 86d.
  • tensions T1 and T2 can be applied to the vapor deposition mask 20 in the longitudinal direction D1.
  • the tension applied to the vapor deposition mask 20 is the sum of the tension T1 of the first tension portion 87a and the tension T2 of the second tension portion 87b.
  • Each of the tension portions 87a to 87d may include an air cylinder, for example.
  • the third clamp 86c and the fourth clamp 86d may be made immovable without using the third tension portion 87c and the fourth tension portion 87d.
  • the deposition mask 20 When the tensions T1 and T2 in the longitudinal direction D1 are applied to the deposition mask 20, the deposition mask 20 extends in the longitudinal direction D1, but contracts in the width direction D2.
  • the tension T1 of the first tension portion 87a is set so that all the through holes 25 of the deposition mask 20 that are elastically deformed in this manner are positioned within an allowable range with respect to a desired position (deposition target position).
  • the tension T2 of the second tension portion 87b are adjusted.
  • contraction in the width direction D2 of the vapor deposition mask 20 can be adjusted locally, and each through-hole 25 can be positioned in an allowable range.
  • the vapor deposition mask 20 in a state where no tension is applied is curved in a C shape so as to be convex in the direction from the first side edge 27a side to the second side edge 27b side as shown in FIG.
  • the tension T1 of the first tension portion 87a on the first side edge 27a side may be larger than the tension T2 of the second tension portion 87b.
  • a larger tension can be applied to the portion on the first side edge 27a side than the portion on the second side edge 27b side. Therefore, the portion on the first side edge 27a side can be extended more than the portion on the second side edge 27b side, and each through hole 25 can be easily positioned within the allowable range.
  • the vapor deposition mask 20 in a state where no tension is applied is curved in a C shape so as to be convex in the direction from the second side edge 27b side to the first side edge 27a side.
  • the tension T2 of the second tension portion 87b on the second side edge 27b side may be larger than the tension T1 of the first tension portion 87a.
  • a larger tension can be applied to the portion on the second side edge 27b side than the portion on the first side edge 27a side.
  • the part by the side of the 2nd side edge 27b can be extended more than the part by the side of the 1st side edge 27a, and each through-hole 25 can be easily positioned in an allowable range.
  • the dimension X1 and the dimension X2 of the vapor deposition mask 20 placed on the stage 81 or the like satisfy the formula (1), so that the longitudinal direction D1 of the vapor deposition mask 20 at the time of stretching is set. It is possible to keep the amount of elongation within a desired range. For this reason, the amount of shrinkage in the width direction D2 of the vapor deposition mask 20 at the time of stretching can be kept within a desired range. As a result, when the dimension X1 and the dimension X2 satisfy the formula (1), the position adjustment of each through-hole 25 can be facilitated at the time of tensioning.
  • each through hole 25 is positioned at a desired position. It may be difficult. This is because the longitudinal dimension differs in the width direction D2 due to the difference in the degree of the wavy shape in the width direction D2 of the long metal plate 64. In this case, when the dimension X1 and the dimension X2 are different and are not stretched, the vapor deposition mask 20 can be curved in a C shape as shown in FIG.
  • the dimension X1 is shorter than the dimension X2 when not stretched. For this reason, when the vapor deposition mask 20 is stretched, a tensile force is applied to the vapor deposition mask 20 so that the dimension X1 is equal to the dimension X2, as shown in FIG.
  • the portion on the first side edge 27a side extends larger than the portion on the second side edge 27b side, and the center position in the longitudinal direction D1 of the vapor deposition mask 20 is shifted to the first side edge 27a side, Thereby, the through-hole 25 can be displaced in the width direction D2.
  • the curved shape of the vapor deposition mask 20 may be reversed as shown in FIG.
  • the first side edge 27a is convex and the second side edge 27b is concavely curved.
  • the through hole 25 can be displaced in the width direction D2.
  • Formula (2) is for suppressing the occurrence of a position defect of each through-hole 25 during stretching due to such a cause.
  • the dimension X1 and dimension X2 of the vapor deposition mask 20 placed on the stage 81 and the like satisfy the formula (2), so that the length in the longitudinal direction D1 of the vapor deposition mask 20 is increased. It can suppress that it differs in the width direction D2, and can suppress that elongation of the longitudinal direction D1 differs in the width direction D2 at the time of tensioning. For this reason, the position shift in the width direction D2 of the through-hole 25 can be suppressed at the time of tensioning. As a result, when the dimension X1 and the dimension X2 satisfy the expression (2), the through holes 25 can be easily positioned within the allowable range when being stretched.
  • the frame 15 is arranged so that the vapor deposition mask 20 faces the organic EL substrate 92. Subsequently, the vapor deposition mask 20 is brought into close contact with the organic EL substrate 92 using the magnet 93. Thereafter, in this state, the vapor deposition material 98 is evaporated, and the vapor deposition material 98 is caused to fly to the organic EL substrate 92 through the through hole 25 of the vapor deposition mask 20. Thereby, the vapor deposition material 98 can be attached to the organic EL substrate 92 in a predetermined pattern.
  • the dimension X1 from the point P1 to the point Q1 and the dimension X2 from the point P2 to the point Q2 satisfy the above-described expressions (1) and (2).
  • the deviation from the design values of the dimensions X1 and X2 can be reduced in the vapor deposition mask 20 in which the dimensions X1 and X2 satisfy the predetermined condition and are determined to be non-defective products by the expression (1).
  • the amount of shrinkage in the width direction D2 can be kept within a desired range.
  • the difference between the dimension X1 and the dimension X2 can be reduced by the expression (2).
  • the vapor deposition mask device 10 can suppress that the elongation of the longitudinal direction D1 of the vapor deposition mask 20 differs in the width direction D2 at the time of tensioning, and can suppress the position shift in the width direction D2 of the through-hole 25.
  • the vapor deposition mask device 10 by producing the vapor deposition mask device 10 using the vapor deposition mask 20 determined to be non-defective, the positional accuracy of each through hole 25 of the vapor deposition mask 20 in the vapor deposition mask device 10 can be improved, The positional accuracy of the through hole 25 can be improved.
  • the vapor deposition material 98 can be vapor-deposited on the substrate 92 with high positional accuracy, and the high-definition organic EL display device 100 can be manufactured.
  • the points P1 and P2 are positioned at the center point of the corresponding through hole 25 of the first effective region 22A arranged closest to the first ear portion 17a, and Q1 The point and the point Q2 are positioned at the center point of the corresponding through hole 25 of the second effective region 22B arranged closest to the second ear portion 17b.
  • the points P1 and P2 are positioned at the center point of the corresponding through-hole 25 that is formed closest to the first ear portion 17a, and the points Q1 and Q2 are These are positioned at the center point of the corresponding through hole 25 that is formed closest to the second ear portion 17b.
  • the P1 point and the P2 point are the penetrating holes formed closest to the first ear portion 17a in the first effective region 22A disposed closest to the first ear portion 17a.
  • the example positioned at the center point of the hole 25 is shown.
  • the present invention is not limited to this, and the through hole 25 in which the P1 point and the P2 point are positioned is an arbitrary through hole 25 in the first effective region 22A arranged closest to the first ear portion 17a. Also good.
  • the through hole 25 where the P1 point and the P2 point are positioned may be the through hole 25 of the effective region 22 other than the first effective region 22A. The same applies to the points Q1 and Q2.
  • the P1 point and the Q1 point may not be positioned in the through hole 25 as long as they are two arbitrary points arranged along the longitudinal direction D1 of the vapor deposition mask 20.
  • it may be an arbitrary recess formed in the first surface 20a or the second surface 20b of the vapor deposition mask 20, or another through hole not intended to pass the vapor deposition material 98, or even the vapor deposition mask 20 It may be the outer dimension.
  • Dimension X1 and dimension X2 were measured for the plurality of vapor deposition masks 20 produced.
  • the width dimension of the vapor deposition mask 20 was 67 mm.
  • the vapor deposition mask 20 was placed horizontally on the stage 81. At that time, the deposition mask 20 was gently placed on the stage 81 so that the deposition mask 20 was not partially recessed.
  • the dimension X1 from the P1 point to the Q1 point of the vapor deposition mask 20 was measured, and the dimension X2 from the P2 point to the Q2 point was measured.
  • the measurement results are shown in FIG. 29 as ⁇ X -X1 and ⁇ X -X2.
  • the points P1 and Q1, and the points P2 and Q2 are set at the center of the through hole 25 such that ⁇ X is 600 mm.
  • the distance between points P1 and P2 (or the distance between points Q1 and Q2) was 65 mm.
  • the measured dimension X1 and dimension X2 were substituted into the above-described formula (1) to calculate the left side of the formula (1).
  • the calculation result is shown in FIG. 29 as
  • the dimension measurement was performed on 25 vapor deposition masks 20 respectively obtained from 25 samples. Of the first to 25th samples, the 1st to 10th samples, the 21st sample, the 22nd sample, the 24th sample, and the 25th sample satisfied the formula (1).
  • the left side of the equation (2) was calculated by substituting the dimension X1 and the dimension X2 of the vapor deposition mask 20 into the above-described equation (2).
  • the calculation result is shown in FIG. 29 as
  • the first to sixth samples, the eleventh to sixteenth samples, the twenty-first sample, and the twenty-third sample among the first to 25th samples satisfied Expression (2).
  • the deposition mask 20 can improve the positional accuracy of the through-hole 25 at the time.
  • equation (1) is for suppressing the occurrence of the position defect of each through-hole 25 at the time of tension due to the deviation of the dimension X1 and the dimension X2 from the design value. . That is, when the dimension X1 and the dimension X2 satisfy the formula (1), the elongation amount in the longitudinal direction D1 of the vapor deposition mask 20 at the time of stretching can be kept within a desired range. The amount of contraction in the width direction D2 of the mask 20 can be kept within a desired range. Therefore, in order to confirm that satisfying the formula (1) contributes to improving the positional accuracy of the through-hole 25 at the time of stretching, attention is paid to the width dimension Y1 (see FIG.
  • This dimension Y1 corresponds to the width dimension at the center position in the longitudinal direction D1.
  • the amount of contraction in the width direction D2 at the center position can be the largest.
  • the vapor deposition mask 20 to which no tension is applied is shown, but for the sake of convenience, the dimension Y1 at the time of tensioning is shown in FIG. The same applies to the dimension Y2 described later.
  • equation (2) is for suppressing the occurrence of a position defect of each through-hole 25 at the time of stretching due to the displacement of the dimension X1 and the dimension X2. That is, when the dimension X1 and the dimension X2 satisfy the formula (2), it is possible to suppress the elongation in the longitudinal direction D1 from being different in the width direction D2 during tensioning, and to suppress the displacement of the through hole 25 in the width direction D2. it can. Therefore, in order to confirm that satisfying the formula (2) contributes to improving the positional accuracy of the through-hole 25 at the time of stretching, the depth of the recess of the first side edge 27a curved in the C shape of the vapor deposition mask 20 is obtained. Focus on Y2.
  • This dimension Y2 corresponds to a recess depth dimension at the center position in the longitudinal direction D1. More specifically, from the line segment connecting the intersection PY1 between the first end 26a and the first side edge 27a of the vapor deposition mask 20 and the intersection PY2 between the second end 26b and the first side edge 27a, A distance from the one side edge 27a to the center position in the longitudinal direction D1 is defined as a dimension Y2. Such a dimension Y2 indicates the maximum recess depth of the first side edge 27a. In addition, as shown in FIG. 28, when the curved shape of the vapor deposition mask 20 at the time of tension is reversed, the dimension Y2 may be the depth of the recess of the second side edge 27b.
  • tension was applied to the vapor deposition mask 20. More specifically, first, the first end portion 26a and the second end portion 26b of the vapor deposition mask 20 are held by clamps 86a to 86d as shown in FIG. Tension was applied to the vapor deposition mask 20 from the portion 87d. The applied tension was set such that each through hole 25 was positioned within an allowable range with respect to a desired position (deposition target position) in the longitudinal direction D1. Subsequently, the vapor deposition mask 20 to which tension was applied was fixed on the stage 81 shown in FIG. Next, the dimension Y1 and the dimension Y2 of the vapor deposition mask 20 fixed on the stage 81 were measured.
  • the measurement result of the dimension Y1 is shown in FIG. 29 as ⁇ Y -Y1.
  • ⁇ Y is a design value of the width dimension of the vapor deposition mask 20 at the center position in the longitudinal direction D1.
  • ⁇ Y is a design value at the time of stretching.
  • the measurement result of the dimension Y2 is shown in FIG. 29 as Y2.
  • the dimension Y1 was evaluated based on whether or not ⁇ Y -Y1 was a threshold value ( ⁇ 4.0 ⁇ m) or less.
  • the threshold value is set as a value that allows a positional deviation within a range in which light emission efficiency of pixels formed by vapor deposition and color mixture with adjacent pixels of other colors can be prevented.
  • tensile_strength of the longitudinal direction D1 is provided to the vapor deposition mask 20
  • the width dimension of the vapor deposition mask 20 can reduce in the center position in the longitudinal direction D1.
  • the first side edge 27a and the second side edge 27b are deformed so as to approach each other at the center position in the longitudinal direction D1.
  • the allowable deformation value at the first side edge 27a and the second side edge 27b is considered to be 2 ⁇ m, and the threshold value is set to ⁇ 4.0 ⁇ m in total.
  • ⁇ Y -Y1 was less than or equal to the threshold value for the first to tenth sample, the twenty-first sample, the twenty-second sample, the twenty-fourth sample, and the twenty-fifth sample.
  • the first to tenth samples, the twenty-first sample, the twenty-second sample, the twenty-fourth sample, and the twenty-fifth sample since the shift of the width dimension Y1 of the vapor deposition mask 20 is suppressed, the width direction of the through-hole 25 when stretched The positional deviation of D2 can be suppressed.
  • the first to tenth samples, the twenty-first sample, the twenty-second sample, the twenty-fourth sample, and the twenty-fifth sample satisfy Expression (1) as described above. For this reason, satisfy
  • the dimension Y1 has shown the width dimension of the vapor deposition mask 20 in the center position in the longitudinal direction D1.
  • This center position is a position where the through hole 25 can be displaced most in the width direction D2.
  • ⁇ Y -Y1 at the center position is equal to or less than the threshold value, it can be said that the displacement in the width direction D2 of the through hole 25 at a position other than the center position in the longitudinal direction D1 can be further suppressed.
  • the dimension Y2 was evaluated based on whether or not the dimension Y2 was a threshold value (3.0 ⁇ m) or less.
  • the threshold value is set as a value that allows a positional deviation within a range in which light emission efficiency of pixels formed by vapor deposition and color mixture with adjacent pixels of other colors can be prevented.
  • the dimension Y2 was less than or equal to the threshold value.
  • the first to sixth samples, the eleventh to sixteenth samples, the twenty-first sample, and the twenty-third sample the degree of the depression of the first side edge 27a of the vapor deposition mask 20 is reduced, so that the penetration at the time of stretching The positional deviation of the hole 25 in the width direction D2 can be suppressed.
  • the first to sixth samples, the eleventh to sixteenth samples, the twenty-first sample, and the twenty-third sample satisfy Expression (2) as described above. For this reason, satisfy
  • the dimension Y2 indicates the depth dimension of the recess of the first side edge 27a of the vapor deposition mask 20 at the center position in the longitudinal direction D1.
  • This center position is a position where the through hole 25 can be displaced most in the width direction D2. For this reason, when the dimension Y2 at the center position is equal to or less than the threshold value, it can be said that the displacement in the width direction D2 of the through hole 25 at a position other than the center position in the longitudinal direction D1 can be further suppressed.

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PCT/JP2017/046751 2017-01-10 2017-12-26 蒸着マスク、蒸着マスク装置の製造方法および蒸着マスクの製造方法 WO2018131474A1 (ja)

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KR1020187031082A KR102172009B1 (ko) 2017-01-10 2017-12-26 증착 마스크, 증착 마스크 장치의 제조 방법 및 증착 마스크의 제조 방법
US16/096,480 US10991883B2 (en) 2017-01-10 2017-12-26 Deposition mask, method of manufacturing deposition mask device, and method of manufacturing deposition mask
EP17891878.5A EP3569730B1 (en) 2017-01-10 2017-12-26 Vapor deposition mask, method for manufacturing vapor deposition mask device, and method for manufacturing vapor deposition mask

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