WO2018113249A1 - 晶体管的修复方法和装置 - Google Patents

晶体管的修复方法和装置 Download PDF

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WO2018113249A1
WO2018113249A1 PCT/CN2017/091656 CN2017091656W WO2018113249A1 WO 2018113249 A1 WO2018113249 A1 WO 2018113249A1 CN 2017091656 W CN2017091656 W CN 2017091656W WO 2018113249 A1 WO2018113249 A1 WO 2018113249A1
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short
wavelength
metal layer
laser
wavelength laser
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PCT/CN2017/091656
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English (en)
French (fr)
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简重光
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惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US15/848,654 priority Critical patent/US10578937B2/en
Publication of WO2018113249A1 publication Critical patent/WO2018113249A1/zh
Priority to US16/747,236 priority patent/US10802364B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

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  • the present application relates to the field of liquid crystal display technology, and in particular, to a method and apparatus for repairing a transistor.
  • a commonly used liquid crystal display structure mainly includes an array substrate, a color filter substrate, and a liquid crystal molecular layer between the two substrates.
  • the array substrate is provided with a plurality of pixel units, each of which includes a thin film transistor and a pixel electrode.
  • the thin film transistor is used as a switch for controlling the pixel electrode to determine whether the pixel unit can be normally displayed.
  • the source and drain of the thin film transistor are formed in one patterning process, but the metal layer between the source and the drain is likely to cause short circuit of the source and drain metal layer channels due to poor process capability. .
  • the conventional short circuit repair method is to make the pixel into a dark spot. When the number of dark spots exceeds the product specifications, the product will be scrapped.
  • a repair method and apparatus for a thin film transistor that does not increase the number of dark spots are provided.
  • a method for repairing a transistor for repairing a short defect of a metal layer between a source and a drain of a thin film transistor comprising: acquiring a source and a drain of the thin film transistor a short-circuited position of the metal layer between the poles; the first wavelength laser is used to etch away the protective layer above the short-circuited position, and the metal layer of the short-circuited position region is retained; Shorting the metal layer of the location region and retaining the channel layer under the short-circuit location; and partially etching the channel layer below the short-circuit location with a third wavelength laser.
  • a repair device for a transistor for repairing a short defect of a metal layer between a source and a drain of a thin film transistor comprising: an acquisition device for acquiring a source and a drain of the thin film transistor a short circuit position between the metal layers; and an etching device for etching the short circuit position;
  • the etching device includes a first laser etching unit for etching the ground at the first wavelength a protective layer above the short-circuited position, and retaining a metal layer of the short-circuited position region; a second laser etching unit for etching a metal layer located in the short-circuited position region by using a second wavelength laser, and retaining the a channel layer under the short-circuit position; and a third laser etching unit for partially etching the channel layer under the short-circuit position with the third wavelength laser.
  • FIG. 1 is a schematic structural view of a thin film transistor in which a source and a drain intermediate metal layer are short-circuited in an embodiment
  • FIG. 2 is a flow chart showing a method of repairing a thin film transistor in an embodiment
  • FIG. 3 is a schematic structural view of a thin film transistor after performing S203 in FIG. 2;
  • FIG. 4 is a schematic structural view of a thin film transistor after performing S205 in FIG. 2;
  • FIG. 5 is a schematic structural diagram of a thin film transistor after performing S207 in FIG. 2;
  • FIG. 5 is a schematic structural diagram of a thin film transistor after performing S207 in FIG. 2;
  • FIG. 6 is a schematic structural view of a thin film transistor after the protective layer is filled in a short-circuited position in FIG. 5;
  • Fig. 7 is a block diagram showing the structure of a repair apparatus for a thin film transistor in an embodiment.
  • the source and drain of a transistor are formed in a patterning process.
  • the metal layer between the source and the drain is likely to cause a short circuit between the source and drain metal layer channels because of poor process capability.
  • the source and drain metal layer channels are also referred to as the second metal layer in the four-mask process of the thin film transistor.
  • a schematic diagram of a short circuit of the second metal layer of the thin film transistor is shown in FIG.
  • the thin film transistor includes a protective layer 100, a second metal layer 200, and a channel layer 300.
  • the protective layer 100 is used to protect the internal structure of the thin film transistor
  • the second metal layer 200 is used for etching to form a source and a drain
  • the channel layer 300 is used as a conductive path of the thin film transistor.
  • the second metal layer 200 is in a short-circuit state, so that the thin film transistor cannot operate normally.
  • the repair method of the thin film transistor in this embodiment is used to repair such a thin film transistor in a short-circuit state so that it can be restored to a normal state.
  • the repair method of the thin film transistor is used for repairing a short defect of the second metal layer 200 between the source and the drain of the thin film transistor, and the method includes the following steps:
  • Step S201 acquiring a short-circuit position of the metal layer between the source and the drain of the thin film transistor.
  • the short-circuit position of the second metal layer 200 between the source and the drain of the thin film transistor is obtained by using an AOI (Automatic Optic Inspection) in a standard process.
  • AOI Automatic Optic Inspection
  • step S203 the first wavelength laser is used to etch away the protective layer located above the short-circuited position, and the metal layer of the short-circuited area is retained.
  • the protective layer 100 on the thin film transistor is a protective layer formed by chemical vapor deposition.
  • the first wavelength laser is used to etch away the protective layer 100 over the short-circuited position of the second metal layer 200 between the source and the drain of the thin film transistor, and the first wavelength laser is not to the second metal.
  • Layer 200 causes damage to the laser.
  • the wavelength of the first wavelength laser is ⁇ 1, and ⁇ 1 ⁇ 360 nm.
  • the laser light having a wavelength within this range does not cause damage to the second metal layer 200. That is, when the protective layer 100 is etched, damage to the second metal layer 200 is not caused.
  • the first wavelength laser etches only the protective layer 100.
  • FIG. 3 is a schematic diagram after execution of S203.
  • Step S205 etching the metal layer located in the short-circuit position region by using the second wavelength laser, and retaining the channel layer under the short-circuit position.
  • the second metal layer 200 between the source and the drain is etched using a second wavelength laser to form a source and a drain.
  • the second wavelength laser etches only the second metal layer 200.
  • the wavelength of the second wavelength laser light is ⁇ 2, 600 nm ⁇ ⁇ 2 ⁇ 1800 nm.
  • a laser having a wavelength within this range does not cause damage to the channel layer 300.
  • a laser having a high selectivity ratio to the second metal layer 200 and the channel layer 300 is selected as the second wavelength laser, and the second metal layer 200 is etched without causing damage to the channel layer 300.
  • FIG. 4 is a schematic diagram after execution of S205.
  • step S207 the channel layer located under the short-circuit position is partially etched by the laser of the third wavelength.
  • the channel layer 300 functions as a signal turn-on and turn-off in the thin film transistor.
  • the channel layer 300 is a semiconductor layer.
  • the semiconductor layer serves as a channel between the source and the drain of the thin film transistor.
  • the channel layer 300 under the short-circuited position of the second metal layer 200 between the source and the drain is partially etched by the laser of the third wavelength. Only the channel layer 300 is partially etched to ensure the channel characteristics of the channel layer 300, thereby enabling the thin film transistor to turn on and off the signal.
  • the wavelength of the third wavelength laser is ⁇ 3, ⁇ 3 ⁇ 360 nm.
  • FIG. 5 is a schematic diagram after execution of S207. Referring to FIG.
  • the second metal layer 200 in the region where the short-circuit position of the original thin film transistor is located is etched away, and the channel layer 300 is partially etched to ensure the channel characteristics of the channel layer 300, thereby repairing the thin film transistor to a normal state.
  • the thin film transistor structure, so the thin film transistor does not form a dark spot.
  • the repair method of the above transistor is to obtain a second between the source and the drain of the thin film transistor
  • the protective layer 100 is etched by the first-wavelength laser
  • the first-wavelength laser is a laser that does not damage the metal layer 200.
  • the second metal layer 200 is etched by the second wavelength laser, which is a laser that does not damage the channel layer 300.
  • the channel layer 300 is partially etched by a third wavelength laser. That is, the laser is etched according to different layers using different wavelengths of laser light, so that the underlying materials are not damaged, thereby realizing the protection of the underlying material.
  • the channel layer 300 When the channel layer 300 is etched, only the channel layer 300 is partially etched, thereby leaving a portion of the channel layer 300 without cutting the problematic channel layer 300, thereby repairing the short defect to a normal condition. Therefore, the thin film transistor pixels at this place will not become dark spots, so that the number of dark spots of the product will not be increased, the yield of the product can be improved, and the product can be scrapped.
  • the step of filling the protective layer 400 (shown in Figure 6) at the short-circuit location is also performed.
  • the protective layer 400 can protect the channel layer 300 from moisture affecting the channel layer 300.
  • the filled protective layer 400 fills the etched channel layer 300 and metal layer 200.
  • the filled protective layer 400 is an insulating resin.
  • the protective layer 400 is an insulating protective layer to prevent the channel layer 300 from being always turned on, thereby causing the pixel to be unable to display black.
  • the protective layer 400 is a protective layer of a resin material, and the source material of the protective layer 400 is simple and inexpensive.
  • Fig. 7 is a block diagram showing the structure of a repair apparatus for a thin film transistor in an embodiment.
  • the repair device of the thin film transistor includes an acquisition device 710 and an etching device 720.
  • the acquisition device 710 is configured to acquire a short-circuited position of the metal layer between the source and the drain of the thin film transistor.
  • the acquisition device 710 is an automated optical inspection machine in a standard process. The automatic optical inspection machine detects and acquires the short-circuited position of the second metal layer 200 between the source and the drain of the thin film transistor.
  • the etching device 720 is for etching a short-circuited position of the metal layer between the source and the drain of the thin film transistor.
  • the etching device 720 includes a first laser etching unit 721, a second laser etching unit 723, and a third laser etching unit 725.
  • the first laser etching unit 721 is configured to etch away the protective layer 100 above the short-circuited position of the second metal layer 200 between the source and the drain of the thin film transistor by using the first wavelength laser, and the first wavelength laser is not
  • the secondary metal layer 200 causes damage to the laser. Selecting a wavelength having a high selectivity ratio to the protective layer 100 and the second metal layer 200 as the first wavelength laser The second metal layer 200 is not damaged when the protective layer 100 is etched.
  • the first wavelength laser etches only the protective layer 100.
  • the second laser etching unit 723 is configured to etch away the short-circuit metal layer between the source and the drain of the thin film transistor by using the second wavelength laser, and the second wavelength laser is a laser that does not damage the channel layer 300.
  • the second wavelength laser etches only the metal layer between the source and the drain of the thin film transistor.
  • a laser having a high selectivity ratio to the second metal layer 200 and the channel layer 300 is selected as the second wavelength laser, and the second metal layer 200 is etched without causing damage to the channel layer 300.
  • the third laser etching unit 725 is configured to partially etch the channel layer 300 under the short-circuited position of the second metal layer 200 between the source and the drain of the thin film transistor by using the third wavelength laser.
  • the first laser The etching unit 721, the second laser etching unit 723, and the third laser etching unit 724 may be the same laser etching unit.
  • the output laser wavelength of the laser etching unit can be adjusted as needed, thereby contributing to a reduction in the generation cost.
  • the repair device of the thin film transistor further includes a filling device 730.
  • the filling device 730 is configured to fill the protective layer 400 at a short-circuited position of the metal layer between the source and the drain of the thin film transistor.
  • the protective layer 400 is an insulating protective layer.
  • the repair device of the above transistor after acquiring the short-circuit position of the metal layer between the source and the drain of the thin film transistor, etching the protective layer 100 by the first wavelength laser, the first wavelength laser is not the second
  • the track metal layer 200 causes damage to the laser.
  • the second metal layer 200 is etched by the second wavelength laser, which is a laser that does not damage the channel layer 300.
  • the channel layer 300 is partially etched by a third wavelength laser. That is, the laser is etched according to different layers using different wavelengths of laser light, so that the underlying materials are not damaged, thereby realizing the protection of the underlying material.
  • the channel layer 300 When the channel layer 300 is etched, only the channel layer 300 is partially etched, thereby leaving a portion of the channel layer 300 without cutting the problematic channel layer 300, thereby repairing the short defect to a normal condition. Therefore, the thin film transistor pixels there will not become dark spots, so it will not increase the number of dark spots of the product, which can improve the product yield and reduce product scrap.

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Abstract

一种晶体管的修复方法，用于对薄膜晶体管的源极和漏极中间的金属层的短路缺陷进行修复；所述修复方法包括：获取所述薄膜晶体管的源极和漏极之间的金属层的短路位置；利用第一波长激光刻蚀掉位于所述短路位置上方的保护层；利用第二波长激光刻蚀掉位于所述短路位置区的金属层；以及利用第三波长激光部分刻蚀位于所述短路位置下方的通道层。

Description

晶体管的修复方法和装置
本申请要求于2016年12月21日提交中国专利局、申请号为201611193990.0、申请名称为“晶体管的修复方法和装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及液晶显示技术领域，特别是涉及一种晶体管的修复方法和装置。
背景技术
目前，常用的液晶显示器结构主要包括阵列基板、彩膜基板以及位于两块基板之间的液晶分子层。其中，阵列基板上设置有多个像素单元，每个像素单元包括薄膜晶体管和像素电极。薄膜晶体管作为控制像素电极的开关，决定像素单元能否正常显示。在阵列基板的制作过程中，薄膜晶体管的源极和漏极在一次构图工艺中形成，但是源极和漏极中间的金属层因为制程能力较差，容易导致源极和漏极金属层通道短路。当源极和漏极金属层通道短路之后，传统短路修复方法是将该画素做成暗点。当暗点的点数超出产品规格时，就会造成产品报废。
发明内容
根据本申请的各种实施例，提供一种不会增加暗点数的薄膜晶体管的修复方法和装置。
一种晶体管的修复方法，用于对薄膜晶体管的源极和漏极中间的金属层的短路缺陷进行修复；所述修复方法包括：获取所述薄膜晶体管的源极和漏 极之间的金属层的短路位置；利用第一波长激光刻蚀掉位于所述短路位置上方的保护层，并保留所述短路位置区的金属层；利用第二波长激光刻蚀掉位于所述短路位置区的金属层，并保留所述短路位置下方的通道层；以及利用第三波长激光部分刻蚀位于所述短路位置下方的通道层。
一种晶体管的修复装置，用于对薄膜晶体管的源极和漏极中间的金属层的短路缺陷进行修复；所述修复装置包括：获取设备，用于获取所述薄膜晶体管的源极和漏极之间的金属层的短路位置；及刻蚀设备，用于对所述短路位置进行刻蚀；所述刻蚀设备包括第一激光刻蚀单元，用于利用第一波长激光刻蚀掉位于所述短路位置上方的保护层，并保留所述短路位置区的金属层；第二激光刻蚀单元，用于利用第二波长激光刻蚀掉位于所述短路位置区的金属层，并保留所述短路位置下方的通道层；以及第三激光刻蚀单元，用于利用第三波长激光部分刻蚀位于所述短路位置下方的通道层。
本发明的一个或多个实施例的细节在下面的附图和描述中提出。本发明的其它特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他实施例的附图。
图1为一实施例中的源极和漏极中间金属层短路的薄膜晶体管的结构示意图；
图2为一实施例中的薄膜晶体管的修复方法的流程图；
图3为图2执行S203后的薄膜晶体管的结构示意图；
图4为图2执行S205后的薄膜晶体管的结构示意图；
图5为图2执行S207后的薄膜晶体管的结构示意图；
图6为图5中短路位置填充保护层后的薄膜晶体管的结构示意图；
图7为一实施例中的薄膜晶体管的修复装置的结构框图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。
在阵列基板的制作过程中，晶体管，例如薄膜晶体管的源极和漏极在一次构图工艺中形成。但是源极和漏极中间的金属层因为制程能力较差，容易导致源极和漏极金属层通道短路。源极和漏极金属层通道在薄膜晶体管的四道光罩制程中，也称为第二道金属层。薄膜晶体管的第二道金属层短路时的示意图如图1所示。
参见图1，该薄膜晶体管包括保护层100、第二道金属层200以及通道层300。保护层100用于保护薄膜晶体管内部结构，第二道金属层200用于刻蚀以形成源极和漏极，通道层300用于作为薄膜晶体管的导电通道。如图1所示，第二金属层200处于短路状态，从而使得该薄膜晶体管无法正常工作。本实施例中的薄膜晶体管的修复方法则用于对这种处于短路状态的薄膜晶体管进行修复，以使得其能够恢复至正常状态。
图2为本实施例中的薄膜晶体管的修复方法的流程图。该薄膜晶体管的修复方法用于对薄膜晶体管的源极和漏极中间的第二道金属层200的短路缺陷进行修复，该方法包括如下步骤：
步骤S201，获取薄膜晶体管的源极和漏极之间的金属层的短路位置。
在本实施例中，采用标准制程中的AOI(Automatic Optic Inspection，自动光学检查机)获取薄膜晶体管的源极和漏极之间的第二道金属层200的短路位置。
步骤S203，利用第一波长激光刻蚀掉位于短路位置上方的保护层，并保留短路位置区的金属层。
薄膜晶体管上的保护层100为化学气相沉积而成的保护层。在本实施例中，利用第一波长激光刻蚀掉薄膜晶体管源极和漏极之间的第二道金属层200的短路位置上方的保护层100，第一波长激光为不会对第二金属层200造成损伤的激光。其中，第一波长激光的波长为λ1，λ1＜360nm。波长在此范围内的激光不会对第二金属层200造成损伤。也即是刻蚀保护层100时不会对第二道金属层200造成损伤。其中，第一波长激光仅对保护层100进行刻蚀。图3为执行S203后的示意图。
步骤S205，利用第二波长激光刻蚀掉位于短路位置区的金属层，并保留短路位置下方的通道层。
在本实施例中，利用第二波长激光将源极和漏极之间的第二道金属层200刻蚀以形成源极和漏极。第二波长激光和第一波长激光的波长范围不存在交叠区域。第二波长激光仅对第二道金属层200进行刻蚀。在本实施例中，第二波长激光的波长为λ2，600nm＜λ2＜1800nm。波长在此范围内的激光不会对通道层300造成损伤。选用对第二道金属层200和通道层300具有高选择比的波长的激光作为第二波长激光，刻蚀第二道金属层200时不会对通道层300造成损伤。图4为执行S205后的示意图。
步骤S207，利用第三波长激光部分刻蚀位于短路位置下方的通道层。
通道层300在薄膜晶体管中起到信号开启与关断的作用。通道层300为半导体层。半导体层作为薄膜晶体管的源极和漏极间的沟道。在本实施例中，利用第三波长激光部分刻蚀源极和漏极之间的第二道金属层200的短路位置下方的通道层300。仅对通道层300部分刻蚀以保证通道层300的通道特性，从而实现薄膜晶体管对信号的开启与关断。在本实施例中，第三波长激光的波长为λ3，λ3＜360nm。图5为执行S207后的示意图。参见图5，原薄膜晶体管的短路位置所在区域的第二道金属层200被刻蚀掉，同时对通道层300进行部分刻蚀，从而确保通道层300的通道特性，进而将薄膜晶体管修复成正常的薄膜晶体管结构，因此该薄膜晶体管不会形成暗点。
上述晶体管的修复方法，在获取到薄膜晶体管的源极和漏极之间的第二 道金属层200的短路位置后，通过第一波长激光对保护层100进行刻蚀，第一波长激光为不会对金属层200造成损伤的激光。通过第二波长激光对第二道金属层200进行刻蚀，第二波长激光为不会对通道层300造成损伤的激光。并通过第三波长激光对通道层300进行部分刻蚀。也即，根据不同层采用不同的波长激光进行刻蚀，因此不会伤害到其他下层的材料，从而实现对下层材料的保护。在对通道层300进行刻蚀时，仅对通道层300进行部分刻蚀，从而保留一部分的通道层300，不会将有问题的通道层300切断，因而可以将该短路缺陷修复成正常状况。因此，该处的薄膜晶体管画素就不会变为暗点，从而不会增加产品暗点数，可以提高产品的良品率，减少产品报废。
在其他实施例中，在S207之后，还会执行在短路位置填充保护层400(如图6所示)的步骤。保护层400可以保护通道层300，避免水气影响通道层300。填充的保护层400将刻蚀掉的通道层300和金属层200填满。填充的保护层400为绝缘树脂。保护层400为绝缘保护层，以避免通道层300一直处于接通状态而造成该处像素无法显示黑的功能。在一实施例中，保护层400为树酯材料的保护层，保护层400材料来源简单且便宜。
图7为一实施例中的薄膜晶体管的修复装置的结构框图。如图7所示，该薄膜晶体管的修复装置包括获取设备710和刻蚀设备720。
获取设备710用于获取薄膜晶体管的源极和漏极之间的金属层的短路位置。在本实施例中，获取设备710为标准制程中的自动光学检查机。自动光学检查机检测并获取薄膜晶体管的源极和漏极之间的第二道金属层200的短路位置。
刻蚀设备720用于对薄膜晶体管的源极和漏极之间的金属层的短路位置进行刻蚀。刻蚀设备720包括第一激光刻蚀单元721、第二激光刻蚀单元723以及第三激光刻蚀单元725。第一激光刻蚀单元721用于利用第一波长激光刻蚀掉薄膜晶体管的源极和漏极之间第二道金属层200短路位置上方的保护层100，第一波长激光为不会对第二道金属层200造成损伤的激光。选用对保护层100和第二道金属层200具有高选择比的波长作为第一波长激光，刻 蚀保护层100时不会对第二道金属层200造成损伤。第一波长激光仅对保护层100进行刻蚀。第二激光刻蚀单元723用于利用第二波长激光刻蚀掉薄膜晶体管的源极和漏极之间的短路金属层，第二波长激光为不会对通道层300造成损伤的激光。第二波长激光仅对薄膜晶体管的源极和漏极之间的金属层进行刻蚀。选用对第二道金属层200和通道层300具有高选择比的波长的激光作为第二波长激光，刻蚀第二道金属层200时不会对通道层300造成损伤。第三激光刻蚀单元725用于利用第三波长激光部分刻蚀薄膜晶体管的源极和漏极之间第二道金属层200短路位置下方的通道层300在其他的实施例中，第一激光刻蚀单元721、第二激光刻蚀单元723和第三激光刻蚀单元724可以为同一激光刻蚀单元。该激光刻蚀单元的输出激光波长可以根据需要进行调整，从而有利于降低生成成本。
在其他实施例中，该薄膜晶体管的修复装置还包括填充设备730。填充设备730，用于在薄膜晶体管的源极和漏极之间的金属层的短路位置填充保护层400。保护层400为绝缘保护层。
上述晶体管的修复装置，在获取到薄膜晶体管的源极和漏极之间的金属层的短路位置后，通过第一波长激光对保护层100进行刻蚀，第一波长激光为不会对第二道金属层200造成损伤的激光。通过第二波长激光对第二道金属层200进行刻蚀，第二波长激光为不会对通道层300造成损伤的激光。并通过第三波长激光对通道层300进行部分刻蚀。也即，根据不同层采用不同的波长激光进行刻蚀，因此不会伤害到其他下层的材料，从而实现对下层材料的保护。在对通道层300进行刻蚀时，仅对通道层300进行部分刻蚀，从而保留一部分的通道层300，不会将有问题的通道层300切断，因而可以将该短路缺陷修复成正常状况。因此，该处的薄膜晶体管画素就不会变为暗点，因此不会增加产品暗点数，可以提高产品的良品率，减少产品报废。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (16)

  1. 一种晶体管的修复方法，包括：
    获取薄膜晶体管的源极和漏极之间的金属层的短路位置；
    利用第一波长激光刻蚀掉位于所述短路位置上方的保护层，并保留所述短路位置区的金属层；
    利用第二波长激光刻蚀掉位于所述短路位置区的金属层，并保留所述短路位置下方的通道层；及
    利用第三波长激光部分刻蚀位于所述短路位置下方的通道层。
  2. 根据权利要求1所述的方法，其中，所述第一波长激光的波长小于360nm，所述第二波长激光的波长范围为600～1800nm；所述第三波长激光的波长小于360nm。
  3. 根据权利要求1所述的方法，其中，所述获取薄膜晶体管的源极和漏极之间的金属层的短路位置为，采用自动光学检查机获取所述源极和漏极之间的金属层的短路位置。
  4. 一种晶体管的修复方法，包括：
    获取薄膜晶体管的源极和漏极之间的金属层的短路位置；
    利用第一波长激光刻蚀掉位于所述短路位置上方的保护层，并保留所述短路位置区的金属层；
    利用第二波长激光刻蚀掉位于所述短路位置区的金属层，并保留所述短路位置下方的通道层；
    利用第三波长激光部分刻蚀位于所述短路位置下方的通道层；及
    在所述短路位置填充保护层。
  5. 根据权利要求4所述的方法，其中，所述第一波长激光的波长小于360nm，所述第二波长激光的波长范围为600～1800nm；所述第三波长激光的波长小于360nm。
  6. 根据权利要求4所述的方法，其中，所述获取薄膜晶体管的源极和漏极之间的金属层的短路位置的步骤为，采用自动光学检查机获取所述源极和 漏极之间的金属层的短路位置。
  7. 根据权利要求4所述的方法，其中，填充的保护层将刻蚀掉的通道层和金属层填满；填充的保护层为绝缘树脂。
  8. 一种晶体管的修复装置，包括：
    获取设备，设置为获取薄膜晶体管的源极和漏极之间的金属层的短路位置；及
    刻蚀设备，设置为对所述短路位置进行刻蚀。
  9. 根据权利要求8所述的晶体管的修复装置，其中，所述刻蚀设备包括：
    第一激光刻蚀单元，设置为利用第一波长激光刻蚀掉位于所述短路位置上方的保护层，并保留所述短路位置区的金属层；
    第二激光刻蚀单元，设置为利用第二波长激光刻蚀掉位于所述短路位置区的金属层，并保留所述短路位置区下方的通道层；及
    第三激光刻蚀单元，设置为利用第三波长激光部分刻蚀位于所述短路位置下方的通道层。
  10. 根据权利要求8所述的修复装置，其中，所述获取设备为自动光学检查机。
  11. 根据权利要求9所述的修复装置，其中，所述第一波长激光的波长小于360nm；所述第二波长激光的波长范围为600～1800nm；所述第三波长激光的波长小于360nm。
  12. 一种晶体管的修复装置，包括：
    获取设备，设置为获取薄膜晶体管的源极和漏极之间的金属层的短路位置；
    刻蚀设备，设置为对所述短路位置进行刻蚀；及
    填充设备，设置为对所述刻蚀设备刻蚀后的所述短路位置所在区域填充保护层。
  13. 根据权利要求12所述的修复装置，其中，所述刻蚀设备包括：
    第一激光刻蚀单元，设置为利用第一波长激光刻蚀掉位于所述短路位置 上方的保护层，并保留所述短路位置区的金属层；
    第二激光刻蚀单元，设置为利用第二波长激光刻蚀掉位于所述短路位置区的金属层，并保留所述短路位置下方的通道层；及
    第三激光刻蚀单元，设置为利用第三波长激光部分刻蚀位于所述短路位置下方的通道层。
  14. 根据权利要求12所述的修复装置，其中，所述获取设备为自动光学检查机。
  15. 根据权利要求12所述的修复装置，其中，填充的保护层将刻蚀掉的通道层和金属层填满；填充的保护层为绝缘树脂。
  16. 根据权利要求13所述的修复装置，其中，所述第一波长激光的波长小于360nm；所述第二波长激光的波长范围为600～1800nm；所述第三波长激光的波长小于360nm。
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