WO2018083903A1 - 波長変換部材、発光デバイス及び波長変換部材の製造方法 - Google Patents
波長変換部材、発光デバイス及び波長変換部材の製造方法 Download PDFInfo
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- WO2018083903A1 WO2018083903A1 PCT/JP2017/033879 JP2017033879W WO2018083903A1 WO 2018083903 A1 WO2018083903 A1 WO 2018083903A1 JP 2017033879 W JP2017033879 W JP 2017033879W WO 2018083903 A1 WO2018083903 A1 WO 2018083903A1
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 10
- 239000011521 glass Substances 0.000 claims abstract description 125
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 106
- 239000000843 powder Substances 0.000 claims abstract description 55
- 239000011159 matrix material Substances 0.000 claims abstract description 18
- 239000004005 microsphere Substances 0.000 claims description 34
- 230000005284 excitation Effects 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 20
- 238000010304 firing Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 183
- 239000002002 slurry Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000007606 doctor blade method Methods 0.000 description 6
- 239000004014 plasticizer Substances 0.000 description 6
- -1 polyethylene terephthalate Polymers 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 239000005388 borosilicate glass Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910018068 Li 2 O Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- DGWFDTKFTGTOAF-UHFFFAOYSA-N P.Cl.Cl.Cl Chemical compound P.Cl.Cl.Cl DGWFDTKFTGTOAF-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- UAHZTKVCYHJBJQ-UHFFFAOYSA-N [P].S=O Chemical compound [P].S=O UAHZTKVCYHJBJQ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000007578 melt-quenching technique Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000003981 vehicle Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/111—Anti-reflection coatings using layers comprising organic materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
- G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
Definitions
- an object of the present invention is to provide a wavelength conversion member capable of increasing light extraction efficiency and improving light emission efficiency.
- the area ratio of the fine uneven layer occupying the surface of the glass layer is preferably 90% or more.
- the softening point of the glass layer is preferably 500 ° C. or higher.
- a part of the microsphere is integrated with the glass layer by firing the laminate.
- the inorganic phosphor powder is not particularly limited as long as it emits fluorescence upon incidence of excitation light.
- Specific examples of the inorganic phosphor powder include, for example, oxide phosphor, nitride phosphor, oxynitride phosphor, chloride phosphor, acid chloride phosphor, sulfide phosphor, oxysulfide phosphor, Examples thereof include one or more selected from a halide phosphor, a chalcogenide phosphor, an aluminate phosphor, a halophosphate phosphor, and a garnet compound phosphor.
- blue light for example, a phosphor that emits green light, yellow light, or red light as fluorescence can be used.
- the light-emitting device of the present invention includes a wavelength conversion member 10 and a light source that irradiates the wavelength conversion member 10 with light having an excitation wavelength of inorganic phosphor powder.
- a light source an LED, an LD, or the like can be used.
- the excitation light emitted from the light source is converted in wavelength by the phosphor layer in the wavelength conversion member, emits fluorescence, and is emitted together with the excitation light.
- the wavelength conversion member has a reflection layer, fluorescence or excitation light is emitted to the side opposite to the excitation light irradiation side when no reflection layer is provided on the excitation light irradiation side.
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- Optics & Photonics (AREA)
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- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Multimedia (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Laminated Bodies (AREA)
- Optical Filters (AREA)
- Luminescent Compositions (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
Abstract
Description
質量%でSiO2 71%、Al2O3 6%、B2O3 13%、K2O 1%、Na2O 7%、CaO 1%、BaO 1%となるように原料を調合し、溶融急冷法によってフィルム状にガラスを成形した。得られたガラスフィルムを、ボールミルを用いて湿式粉砕し、平均粒子径(D50)が2μmであるガラス粉末(屈折率nd1.49、軟化点775℃、熱膨張係数51×10-7/℃)を得た。
(a)で得られたガラス粉末50gに結合剤、可塑剤、溶剤等の有機成分を適量添加し、ボールミルで12時間混練することによりスラリーを得た。このスラリーを、ドクターブレード法を用いてポリエチレンテレフタレートフィルム上に塗布し、乾燥させることにより、ガラス層用グリーンシート(厚み25μm)を作製した。
非晶質シリカ球(堺化学工業製Sciqas、平均粒子径1μm、屈折率nd1.46)50gに結合剤、可塑剤、溶剤等の有機成分を適宜添加し、ボールミルで12時間混練することによりスラリーを得た。このスラリーを、ドクターブレード法を用いてポリエチレンテレフタレートフィルム上に塗布し、乾燥させることにより、微細凹凸層用グリーンシートを作製した。
蛍光体層用グリーンシート、ガラス層用グリーンシート、及び微細凹凸層用グリーンシートを順に重ね合わせ、熱圧着機を用いて、90℃で1分、15kPaの圧力を印加することにより積層体を作製した。積層体をφ25mmの大きさに切断した後、常温から600℃まで1℃/分で昇温し、1時間保持し脱脂処理した。その後、800℃で1時間焼成することにより波長変換部材を作製した。焼成後において蛍光体層の厚みが130μm、ガラス層の厚みが10μmであった。また、ガラス層の表面に占める微細凹凸層の面積比率は96%であった。得られた波長変換部材の平面写真及び断面写真(表層付近の拡大写真)を、それぞれ図2の(a)及び(b)に示す。
非晶質シリカ球を堺化学工業製Sciqas、平均粒子径0.7μmに変更したこと以外は、実施例1と同様にして波長変換部材を作製した。
非晶質シリカ球を株式会社アドマテックス製アドマファイン、平均粒子径0.5μmに変更したこと以外は、実施例1と同様にして波長変換部材を作製した。
非晶質シリカ球を堺化学工業製Sciqas、平均粒子径0.4μmに変更したこと以外は、実施例1と同様にして波長変換部材を作製した。
蛍光体層と微細凹凸層の間にガラス層を形成しなかったこと以外は、実施例1と同様にして波長変換部材を作製した。
ガラス層の表面に微細凹凸層を形成しなかったこと以外は、実施例1と同様にして波長変換部材を作製した。
(a)蛍光強度の評価
実施例1~4及び比較例1、2で得られた波長変換部材の微細凹凸層(またはガラス層)が形成された側とは反対側の面に、アルミニウム反射基板(マテリアルハウス社製のMIRO-SILVER)を、接着剤(信越化学工業社製のシリコーン樹脂)を用いて貼付し、測定サンプルを作製した。測定サンプルをモーターの回転軸に固定した。励起光源として、1Wクラスのレーザー素子が30個整列したレーザーユニットから集光レンズでφ1mmのサイズに集光できる光源を準備した。この光源の光出力は30W、波長440nmであった。測定サンプルを7000RPMで回転させながら励起光を照射し、得られた蛍光を光ファイバーを通して小型分光器(USB-4000、オーシャンオプティクス社製)で受光し、発光スペクトルを得た。発光スペクトルから蛍光の強度を求めた。結果を表1に示す。
実施例1及び比較例2について(a)と同様の測定サンプルを作製した。測定サンプルをモーターの回転軸に固定し、7000RPMの回転数で回転させながら、励起光を照射した。光源は上記の青色レーザー素子を1個だけ使用し、入射角度を0~70°の範囲で10°刻みで変化させた。反射光を、光ファイバーを通して小型分光器(オーシャンオプティクス社製USB-4000)で受光し、発光スペクトルを得た。発光スペクトルから蛍光強度と反射励起光強度を求めた。結果を図3、4に示す。
2 ガラス層
3 微細凹凸層
10 波長変換部材
Claims (16)
- ガラスマトリクスと、ガラスマトリクス中に分散された無機蛍光体粉末とを含む蛍光体層と、
蛍光体層の表面上に配されており、無機蛍光体粉末の屈折率以下の屈折率を有するガラス層と、
ガラス層の表面上に配されており、ガラス層の屈折率以下の屈折率を有する微細凹凸層を備えていることを特徴とする波長変換部材。 - 微細凹凸層が微小球により構成されていることを特徴とする請求項1に記載の波長変換部材。
- 微小球の一部がガラス層と一体化していることを特徴とする請求項2に記載の波長変換部材。
- 微小球が非晶質シリカからなることを特徴とする請求項2または3に記載の波長変換部材。
- 微小球の平均粒子径が0.05~3μmであることを特徴とする請求項1~4のいずれかに記載の波長波変換部材。
- ガラス層の表面に占める微細凹凸層の面積比率が90%以上であることを特徴とする請求項1~5のいずれかに記載の波長変換部材。
- ガラス層の軟化点が500℃以上であることを特徴とする請求項1~6のいずれかに記載の波長変換部材。
- ガラス層の厚みが0.1mm以下であることを特徴とする請求項1~7のいずれかに記載の波長変換部材。
- ガラスマトリクスとガラス層の軟化点の差が200℃以下であることを特徴とする請求項1~8のいずれかに記載の波長変換部材。
- 蛍光体層の熱膨張係数とガラス層の熱膨張係数差が100×10-7/℃以下であることを特徴とする請求項1~9のいずれかに記載の波長変換部材。
- 蛍光体層における無機蛍光体粉末の含有量が20~80体積%であることを特徴とする請求項1~10のいずれかに記載の波長変換部材。
- 微細凹凸層上に誘電体多層膜が形成されていることを特徴とする請求項1~11に記載の波長変換部材。
- プロジェクター用であることを特徴とする請求項1~12のいずれかに記載の波長変換部材。
- 請求項1~13のいずれかに記載の波長変換部材と、
波長変換部材に無機蛍光体粉末の励起波長の光を照射する光源と、
を備えることを特徴とする発光デバイス。 - 請求項1~13に記載の波長変換部材を製造するための方法であって、
ガラス粉末と無機蛍光体粉末を含むグリーンシートを準備する工程、
グリーンシートの表面に、ガラス粉末を含む層、さらに微小球を含む層を順に形成することにより積層体を作製する工程、及び
積層体を焼成する工程、
を備えることを特徴とする波長変換部材の製造方法。 - 積層体を焼成することにより、微小球の一部がガラス層と一体化することを特徴とする請求項15に記載の波長変換部材の製造方法。
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US11584886B2 (en) | 2018-06-20 | 2023-02-21 | Nichia Corporation | Ceramic complex, light emitting device using the same, and method for producing ceramic complex |
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US11072555B2 (en) * | 2018-03-02 | 2021-07-27 | Coorstek Kk | Glass member |
KR102149988B1 (ko) * | 2018-09-07 | 2020-08-31 | 대주전자재료 주식회사 | 파장 변환 부재 제조용 적층체 및 파장 변환 부재의 제조방법 |
TWI681246B (zh) * | 2018-11-05 | 2020-01-01 | 揚明光學股份有限公司 | 散熱裝置與投影機 |
JP7238506B2 (ja) * | 2019-03-18 | 2023-03-14 | セイコーエプソン株式会社 | 波長変換素子、光源装置及びプロジェクター |
TWI702739B (zh) * | 2019-07-31 | 2020-08-21 | 台灣應用晶體股份有限公司 | 發光裝置及其製造方法 |
CN112799273B (zh) * | 2019-11-13 | 2023-10-03 | 深圳光峰科技股份有限公司 | 波长转换元件及其制备方法、激光荧光光源 |
CN113917776B (zh) | 2020-07-09 | 2023-03-24 | 中强光电股份有限公司 | 波长转换装置以及投影装置 |
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