WO2018082629A1 - Led器件、led灯及加工led器件焊线的方法 - Google Patents

Led器件、led灯及加工led器件焊线的方法 Download PDF

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Publication number
WO2018082629A1
WO2018082629A1 PCT/CN2017/109198 CN2017109198W WO2018082629A1 WO 2018082629 A1 WO2018082629 A1 WO 2018082629A1 CN 2017109198 W CN2017109198 W CN 2017109198W WO 2018082629 A1 WO2018082629 A1 WO 2018082629A1
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Prior art keywords
bonding wire
bending
segment
led
section
Prior art date
Application number
PCT/CN2017/109198
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English (en)
French (fr)
Inventor
周鹏
李自成
霍达勋
谢志国
潘利兵
杨璐
Original Assignee
佛山市国星光电股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from CN201621178892.5U external-priority patent/CN206422062U/zh
Priority claimed from CN201621445862.6U external-priority patent/CN206388730U/zh
Priority claimed from CN201611226614.7A external-priority patent/CN106784242B/zh
Priority claimed from CN201621446854.3U external-priority patent/CN206388703U/zh
Application filed by 佛山市国星光电股份有限公司 filed Critical 佛山市国星光电股份有限公司
Publication of WO2018082629A1 publication Critical patent/WO2018082629A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the present invention relates to the field of semiconductor technology, and in particular, to an LED device, an LED lamp using the same, and a method of processing a bonding wire in an LED device.
  • the LED device of the prior art comprises a substrate 1a.
  • the substrate 1a is sequentially provided with a first electrical connection region 11a, an insulating region 12a and a second electrical connection region 13a, wherein the LED chip is mounted on the first electricity.
  • the connecting area 11a wherein the LED chip and the substrate need to be connected by a conductive bonding wire, thereby realizing the conduction of the LED chip, and the two ends of the conductive bonding wire are respectively soldered to cover the encapsulant on the substrate 1a, and the encapsulant colloids the LED chip and the conductive bonding The line is covered in it.
  • the encapsulant colloid when the LED device is used, the encapsulant colloid will be thermally expanded and contracted due to thermal shock. In the process, the distance between the first electrical connection region 11a and the second electrical connection region 13a on both sides of the insulating region 12a will be When it is enlarged, the conductive bonding wire will also be stretched with the encapsulant, which may cause the conductive bonding wire to be broken or the solder joints at both ends of the conductive bonding wire to fall off, resulting in failure of the LED device.
  • the prior art discloses a Chinese utility model patent with the announcement number CN204204914U, which discloses an "LED package structure" by providing a straight line segment at one end of a gold wire (ie, the above-mentioned conductive bonding wire), wherein The straight line segment is attached to the substrate or the bracket, and the straight line segment has a certain buffer for the stress on the gold wire, so that the welding of the straight line segment and the corresponding electrode is stronger.
  • a Chinese utility model patent with the announcement number CN204204914U which discloses an "LED package structure" by providing a straight line segment at one end of a gold wire (ie, the above-mentioned conductive bonding wire), wherein The straight line segment is attached to the substrate or the bracket, and the straight line segment has a certain buffer for the stress on the gold wire, so that the welding of the straight line segment and the corresponding electrode is stronger.
  • the gold wire (conductive wire) in the above patent publication is a two-dimensional structure, and the straight line segment only has a certain stress buffering effect on the length direction of the gold wire (conductive wire), and since the gold wire (conductive wire) is The whole is encapsulated by the encapsulated colloid, and the thermal expansion and contraction of the encapsulant will cause stress shock to the entire conductive bonding wire, and the stress impact has no fixed direction, that is, the gold wire (conductive wire) will be subject to the top, bottom, left, right or other.
  • the prior art conductive bonding wires for connecting adjacent LED chips are also two-dimensional structures, which also have the above problems.
  • the technical problem to be solved by the present invention is to provide an LED device that solves the problem of a wire bonding electrode for connecting a LED chip.
  • the technical problem to be solved by the present invention is also to provide an LED device which improves the stress buffering capability of a bonding wire for connecting an LED chip.
  • the technical problem to be solved by the present invention is to provide an LED device to improve the reliability and service life of the LED device.
  • the present invention provides an LED device including a bonding wire, an LED chip, a substrate for carrying the LED chip, and an encapsulant covering the LED chip and the bonding wire;
  • the bonding wire is used for connecting an LED chip and a substrate, the LED chip being soldered to the bonding wire region by a bonding wire, the bonding wire comprising a straight portion and a curved portion connected to the straight portion, the curved portion being at a horizontal plane
  • the projection is a curve
  • the LED chip is provided with at least two
  • the bonding wire is used for connecting two adjacent LED chips
  • the bonding wire comprises a vertical segment, a first bending segment and a second bending segment which are sequentially disposed.
  • the vertical section, the first bending section and the second bending section are sequentially connected to form a curved portion, and the projection of the curved portion in the horizontal plane is a curve.
  • the substrate includes an insulating region and a first electrical connection region and a second electrical connection region respectively located at two sides of the insulating region, and the LED chip is mounted in the first electrical connection region;
  • the straight portion is a vertically disposed vertical segment
  • the curved portion includes a first bending segment and a second bending segment, the vertical segment and An electrode connection of the LED chip, the second bending segment is connected to the second electrical connection region, and the first bending segment is oriented toward the insulating region Bending, the second bending segment is bent toward the second electrical connection region, and the vertical segment, the first bending segment and the second bending segment form a three-dimensional structure;
  • the vertical segment is connected to an electrode of one of the LED chips, and the first bending segment is bent toward the other electrode of the LED chip.
  • the second bending segment is connected to an electrode of another LED chip, and the vertical segment, the first bending segment and the second bending segment form a three-dimensional structure.
  • the bonding wire when used for connecting the LED chip and the second electrical connection region, the bonding wire further includes a connecting segment, the vertical segment, the first bending segment, and the second bending segment And connecting the connecting segments in sequence, the connecting segment being attached to the second electrical connecting region away from at least part of the second bending segment.
  • the connecting section is in the same vertical plane as the vertical section.
  • the first bending segment is bent obliquely upward toward the insulating region, and the second bending segment is second.
  • the electrical connection region is bent obliquely downward, and the second bending segment is disposed between the second electrical connection region and the first bending segment.
  • the LED chip connected to the vertical segment is a connection chip, and the vertical segment is connected to one electrode of the connection chip,
  • the first bent section is inclined toward the other electrode of the connection chip.
  • the portion of the transition between the first bending segment and the second bending segment is located above the connecting chip; or the portion of the transition between the first bending segment and the second bending segment is located between the insulating region and the connecting chip.
  • the first bending segments are all located directly above the LED chip connected to the vertical segment. And the first bending section is inclined obliquely upward.
  • the vertical surface of the first bending segment is parallel to the edge line of the insulating region.
  • the wires at both ends of the bonding wires are neither parallel nor perpendicular to the sides of the LED chip.
  • the LED chip is a blue chip
  • the encapsulant is a phosphor. Mix with silicone.
  • the height of the vertical section is H1
  • the H1 is 30 ⁇ m - 70 ⁇ m.
  • the distance between the highest point of the bonding wire and the upper surface of the LED chip is H2, and the H2 is 70 ⁇ m - 130 ⁇ m.
  • the length of the projection of the first bending section on the horizontal plane is L1
  • the L1 is 100 ⁇ m - 350 ⁇ m.
  • the length of the projection of the connecting section on the horizontal plane is L2, and the L2 is 70 ⁇ m - 150 ⁇ m.
  • the acute angle formed by the tangent to the vertical line at the starting point of the first bending section and the vertical section is A1, and the A1 is 10°-70°.
  • the angle between the projection of the first bending section and the second bending section on the horizontal plane is A2, and the A2 is 100°-160°.
  • the present invention also discloses an LED lamp comprising the LED device of the present invention.
  • the present invention also discloses a method for processing a wire bonding wire of an LED device, comprising the following steps:
  • the horn is disposed in the direction of the second electrical connection region according to the set trajectory to form a second bending segment, and the second bending segment is disposed between the second electrical connection region and the first bending segment;
  • the first bending segment is bent obliquely upward toward the insulating region
  • the second bending segment is bent obliquely downward toward the second electrical connection region
  • the second bending segment The utility model is disposed between the second electrical connection zone and the first bending section.
  • the wire of the LED device of the present invention has a curved portion, and the curved portion is cast at a horizontal plane.
  • the shadow is a curve, thereby avoiding defects caused by the LED device being crushed by the wire, thereby improving the reliability and life of the LED device;
  • the portion where the bonding wire and the electrode of the LED chip are connected needs to pass through the sintering process, thereby generating a heat-affected zone, and the stress-bearing capability of the sintered wire after sintering is reduced, and the present invention passes this part.
  • the wire is arranged in a straight line structure to reduce the stress impact of this part, to ensure that the service life of this part can be matched with the overall life of the wire, so as to avoid premature damage of this section affecting the overall life.
  • the straight part of the wire can be Improve the connection stability with the LED chip electrode;
  • the bonding wire of the present invention has a curved portion, and even if the bonding wire is subjected to stress shock from a plurality of irregular directions, there is a corresponding stress buffering capability, and the bonding wire of the present invention is compared with the prior art two-dimensional bonding wire.
  • the stress shock from all directions can be eliminated, and the wire is effectively prevented from being broken, thereby improving the overall service life of the LED device and the LED lamp.
  • Figure 1 is a cross-sectional view showing a portion of a structure of a prior art LED device
  • FIG. 2 is a plan view of an LED device according to Embodiment 1 of the present invention.
  • Figure 3 is a partial enlarged view of a portion A in Figure 2;
  • Figure 4 is a cross-sectional view of Figure 2 taken along the DD direction;
  • Figure 5 is a partial enlarged view of B in Figure 4.
  • Figure 6 is a partial enlarged view of the portion F in Figure 5;
  • Figure 7 is a cross-sectional view of Figure 2 taken along the EE direction;
  • Figure 8 is a partial enlarged view of a portion C in Figure 7;
  • Figure 9 is a plan view of an LED device according to a second embodiment of the present invention.
  • Figure 10 is a partial enlarged view of A' in Figure 9;
  • Figure 11 is a cross-sectional view of Figure 9 taken along line B'B';
  • Figure 12 is a cross-sectional view of Figure 9 taken along the line C'C';
  • Figure 13 is a partial enlarged view of D' in Figure 12;
  • Figure 14 is a partial enlarged view of E' in Figure 12.
  • the embodiment discloses an LED device including a bonding wire 2 , an LED chip 3 , a substrate 1 for carrying the LED chip 3 , and covering the LED chip 3 and the bonding wire 2 .
  • Encapsulation colloid
  • the bonding wire 2 is used to connect the LED chip 3 and the substrate 1 , and the LED chip 3 is soldered to the bonding wire region by a bonding wire 2 , the bonding wire 2 including a straight portion and the straight portion
  • the portion of the curve that is connected, the projection of the portion of the curve in the horizontal plane is a curve.
  • One end of the straight portion is connected to the LED chip 3, the other end of the straight portion is connected to one end of the curved portion, and the other end of the curved portion is soldered to the wire bonding region of the substrate 1.
  • the LED device of the embodiment since the projection of the curved portion of the bonding wire in the horizontal plane is a curve, the defects caused by the LED device being crushed by the bonding wire are avoided, thereby improving the reliability and the life of the LED device.
  • the substrate 1 includes an insulating region 12 and a first electrical connection region 11 and a second electrical connection region 13 respectively located at two sides of the insulating region 12, and the LED chip 3 is mounted on the first electrical connection region 11 Inside.
  • one end of the bonding wire 2 is located on the electrode 30 of the LED chip, and the other end is located on the second electrical connection region 13, that is, the bonding wire is used to connect the LED in the first electrical connection region.
  • the chip and the second electrical connection region 13, wherein the LED chip 3 to be connected to the bonding wire 2 is defined as a connection chip.
  • the straight portion is a vertically disposed vertical segment 21, and the curved portion includes a first bent portion 22 and a second bent portion 23, and each segment is described in detail below.
  • the vertical section 21 is connected to the electrode 30 of the LED chip, and the projected shape of the vertical section 21 on the substrate 1 is the radial cross-sectional shape of the bonding wire 2.
  • the end of the bonding wire 2 connected to the electrode 30 of the LED chip 3 needs to be After being sintered, the stress tolerance is small.
  • the portion is set to a vertical segment 21, that is, a vertical straight segment. At this time, the vertical segment 21 is not affected by external stress, thereby improving the bonding wire 2 The service life of the portion connected to the electrode 30 of the LED chip 3.
  • the first bending section 22 is bent toward the insulating region 12, and is preferably bent obliquely upward toward the insulating region, that is, in FIG. 2, the first bending segment 22 is bent from the vertical segment 21 toward the second portion.
  • the direction of the segment 23 is set to the left and to the obliquely upward direction, i.e., the first bending segment 22 is shown in Fig. 4 as being upward or downward, not a horizontal straight line.
  • the LED chip connected to the vertical section 21 is defined as a connection chip, the vertical section 21 is connected to one electrode of the connection chip, and the first bending section 22 is connected
  • the other electrode direction of the chip is inclined, i.e., the first bent section 22 is tilted to the upper left in Fig. 4.
  • the external stress received by the bonding wire 2 is mainly from the thermal expansion and contraction of the encapsulant. If the encapsulant of the bonding wire 2 is thick, the stress is relatively large, because the LED chip 3 needs to occupy a certain amount. Therefore, the package body of the vertical orientation of the LED chip 3 is relatively thin.
  • the first bending section 22 is obliquely bent upward in the direction of the insulating region to reduce the external stress received by the bonding wire 2.
  • the second bending section 23 is connected to the second electrical connection zone 13 , and the second bending section 23 can be directly connected to the second electrical connection zone 13 or through the connecting section 24 and the second electrical connection zone 13 described below. Connecting, wherein the second bending section 23 is bent toward the second electrical connection region 13 and is preferably bent obliquely downward toward the second electrical connection region, wherein the second bending segment 23 is disposed at Between the second electrical connection zone 13 and the first bending section 22, this design is to provide space for the connecting section 24 described below.
  • the vertical section, the first bending section and the second bending section of the embodiment form a three-dimensional structure, that is, the bonding wire 2 of the embodiment has a three-dimensional structure, and at this time, even if the bonding wire 2 is subjected to a plurality of irregular directions
  • the stress impact there is also a corresponding stress buffering capability.
  • the first bending segment 22 and the second bending segment 23 have an upwardly convex bending structure, which has The buffer space is stretched in both directions so that the stress is correspondingly buffered.
  • the bonding wire 2 When the bonding wire 2 is subjected to the upward and downward direction stress, the first bending section 22, the second bending section 23, and the vertical section 21 form a three-dimensional structure. At this time, the convex portions of the first bending portion 22 and the second bending portion 23 can be buffered up and down, which is less restricted by the vertical portion 21, thereby achieving stress buffering.
  • the welding of the embodiment When line 2 is subjected to other stress shocks, The buffering of each direction can be obtained by the three-dimensional structure.
  • the bonding wire 2 of the embodiment can eliminate the stress shock from all directions, effectively avoiding the wire 2 being pulled off, thereby improving the bonding wire. 2 and the life of the LED device.
  • the bonding wire 2 of the embodiment further includes a connecting portion 24, the vertical segment 21, the first bending segment 22, and the second
  • the bending section 23 and the connecting section 24 are arranged in sequence, and at least a portion of the connecting section 24 away from the second bending section 23 is attached to the second electrical connection region 13.
  • the connecting section 24 includes at least a portion of the second bending section 23 that is attached to the second electrical connection region 13 , and the straight section is connected to the second electrical connection region 13 .
  • the connecting section 24 is in the same vertical plane as the vertical section 21, that is, the projections of the vertical section 21 and the connecting section 24 on a horizontal plane are on the same straight line.
  • the connecting section 24 and the vertical section 21 are disposed on the same vertical plane, which can further improve the connection stability of the connecting section 24 and the second electrical connection zone.
  • the first bending section 22, the second bending section 23 and the connecting section 24 and the vertical section 21 form a three-dimensional structure similar to a triangle, which can further improve the firmness of the bonding wire.
  • the vertical section 21, the first bending section 22, the second bending section 23 and the connecting section 24 are sequentially connected to form a curved portion, and the projection of the curved portion in the horizontal plane is a curve, wherein
  • the vertical section 21, the first bending section 22, the second bending section 23 and the connecting section 24 are preferably smoothly connected in a smooth curve, and the stress tolerance of the bonding wire 2 can be further improved by the smooth curve transition connection. Avoid premature damage to weak transitions.
  • the vertical section 21, the first bending section 22, the second bending section 23 and the connecting section 24 are integrally formed structures, and the integrally formed bonding wire 2 can withstand greater stress impact.
  • the portion where the first bending segment 22 of the bonding wire 2 is connected with the second bending segment 23 is the inflection point end, and the inflection point end is the bending of the bonding wire 2 relatively.
  • Large parts, when generating the inflection point, have been subjected to certain processing damage, so they are relatively fragile, in order to ensure the welding line 2
  • the overall service life of the present embodiment improves the stress tolerance of the inflection point by the following two preferred embodiments.
  • a portion of the transition between the first bending segment 22 and the second bending segment 23 is located above the connecting chip
  • the portion of the transition between the first bent portion 22 and the second bent portion 23 is located in the space between the insulating region 12 and the connecting chip.
  • the portion of the first bending section 22 and the second bending section 23 ie, the inflection point end
  • the first bending section 22 is entirely above the LED chip 3 at this time, the first The encapsulating colloid below the bending section 22 is relatively thinner, and the thinner the lower encapsulating colloid, the smaller the thermal expansion stress of the bonding wire 2; however, the electrode 30 of the LED chip is located at the edge of the LED chip 3, and the LED chip 3 is The width cannot satisfy the condition that the inflection point end of the first bending section 22 is located above the LED chip 3.
  • the portion where the first bending section 22 and the second bending section 23 are connected is preferably located in the insulating zone.
  • the inflection point is preferably located between the insulating region 12 and the LED chip 3, avoiding the weak inflection point being disposed above the insulating region 12, so as to avoid The inflection point affects the overall service life of the bonding wire 2.
  • the parameters of each section of the welding wire 2 also have an important influence on the service life.
  • the following are the superior parameter selections obtained by the inventors for many experiments.
  • the height of the vertical section 21 is H1, the H1 is 30 ⁇ m - 70 ⁇ m, and the H1 is further preferably in the range of 50 ⁇ m - 60 ⁇ m;
  • the distance between the highest point of the bonding wire 2 and the upper surface of the LED chip 3 is H2, the H2 is 70 ⁇ m - 130 ⁇ m, and the H2 is further preferably in the range of 80 ⁇ m - 120 ⁇ m;
  • the length of the projection of the first bending section 22 on the horizontal plane is L1, the L1 is 100 ⁇ m-350 ⁇ m, and the L1 further preferably ranges from 120 ⁇ m to 320 ⁇ m;
  • the length of the projection of the connecting section 24 on the horizontal plane is L2, the L2 is 70 ⁇ m - 150 ⁇ m, and the L2 is further preferably in the range of 90 ⁇ m - 120 ⁇ m;
  • the angle between the projection of the first bending section 22 and the second bending section 23 on the horizontal plane is A2, the A2 is 100°-160°, and the A2 is further preferably in the range of 115°- 150°.
  • the starting point of the first bending section 22 is limited in this embodiment, that is, the first bending section.
  • the acute angle formed by the tangent to the vertical line connected to the vertical section 21 is A1
  • the A1 is 10°-70°
  • the A1 is further preferably in the range of 20°-60°
  • A1 The assembly causes the bending of the heat affected zone of the wire 2 to be damaged. If the angle is too small, the upward stress of the device cannot form an effective buffer. The stress will directly pull the wire 2 to cause the heat affected zone of the wire 2 to break.
  • the three-dimensional structure formed by the bonding wire 2 can better eliminate the stress from all directions, prevent the bonding wire 2 from being broken, thereby improving the service life of the bonding wire 2. .
  • the LED chip 3 of the embodiment is a blue chip, a red chip or a green chip, which can be selected according to requirements.
  • the plurality of LED chips 3 can also be Select LED chips of different light according to your needs.
  • the LED chip 3 and the encapsulant As a preferred embodiment of the LED chip 3 and the encapsulant, the LED chip is a blue chip, and the encapsulant is a mixture of a phosphor and a silicone.
  • the encapsulant may also be silicone, silica gel or epoxy.
  • the present embodiment discloses an LED device.
  • the LED device disclosed in this embodiment is different from the first embodiment in that the bonding wire in the LED device of the embodiment is used to connect two LEDs. LED chip.
  • the LED device of this embodiment will be described in detail below.
  • the LED device of the present embodiment includes a bonding wire 2b, LED chips (3a, 3b), a substrate 1b for carrying the LED chips (3a, 3b), and an encapsulant covering the LED chips (3a, 3b) and the bonding wires 2b.
  • the LED chip is provided with at least two
  • the bonding wire 2b is for connecting two adjacent LED chips (3a, 3b)
  • the bonding wire 2b includes a vertical segment 21b, which is sequentially disposed
  • first The bent section 22b and the second bent section 23b are sequentially connected to form a curved portion, and the projection of the curved portion in the horizontal plane is a curve.
  • the LED device of the embodiment since the vertical segment 21b, the first bending segment 22b and the second bending segment 23b are sequentially connected to form a curved portion, and the projection of the curved portion in the horizontal plane is a curve, thereby avoiding The LED device is crushed by the wire to cause defects in the electrode, thereby improving the reliability and life of the LED device.
  • the substrate 1b includes an insulating region 12b and a first electrical connection region 11b and a second electrical connection region 13b respectively located at two sides of the insulating region 12b, and the LED chip (3a, 3b) is mounted on the first Inside the electrical connection zone 11b.
  • the two ends of the bonding wire 2b are respectively connected to the electrodes of the adjacent LED chips, and the adjacent LED chips are respectively defined as the first LED chip 3a and the second LED chip 3b.
  • the vertical segment 21b is connected to the electrode of one of the LED chips, and the first bending segment 22b is bent toward the other electrode of the LED chip, and the second bending segment 23b is Another LED chip is connected, and the first bent portion 22b and the second bent portion 23b form a three-dimensional structure between adjacent LED chips.
  • the LED chip connected to the vertical segment 21b is the first LED chip 3a, and the LED chip connected to the second bending segment 23b is the second LED chip 3b.
  • the projected shape of the vertical segment 21b on the first LED chip 3a is the radial cross-sectional shape of the bonding wire 2b.
  • the end portion of the bonding wire 2b connected to the electrode of the first LED chip 3a needs to be sintered, so that the stress withstand capability is small, and the present invention is provided with the vertical portion 21b, which can improve the bonding wire 2b and the first chip electrode.
  • the reliability of the part of the 110 connection is the radial cross-sectional shape of the bonding wire 2b.
  • the horizontal space of the first bending segment 22b and the second bending segment 23b is limited, and the space between the two LED chips is the thickest of the package colloid.
  • the part of the first bending section 22b should be avoided, and the position of the electrode of the second LED chip 3b should have a certain limitation on the installation space of the second bending section 23b.
  • the first bending segments described in this embodiment are all located directly above the LED chips connected to the vertical segments, and the first bending segments are inclined obliquely upward.
  • the two inflection points of the bonding wire 2b are in the thin part of the encapsulant, and the stress impact on the inflection point is minimized, thereby improving the service life of the inflection point, so that the overall life of the bonding wire 2b is relatively average, and
  • the embodiment preferably confines the first bend segment 22b between the two electrodes of the first LED chip 3a.
  • the vertical surface of the first bending segment 22b is parallel to the edge line of the insulating region. At this time, the upper end of the bonding wire 2b is farthest from the edge of the first LED chip 3a, and the end is reached.
  • the optimum protection state and the horizontal section distance of the second bending section 23b can be increased, thereby improving the stress buffering ability of the first bending section 22b and the second bending section 23b.
  • the vertical segment 21b, the first bending segment 22b and the second bending segment 23b are sequentially connected to form a curved portion, the projection of the curved portion in a horizontal plane is a curve, and the first bending segment 22b and the vertical segment Both the 21b and the second bending section 23b are smooth transitional transitions, and the stress-bearing capability of the bonding wire 2b can be further improved by the smooth curve transition connection to avoid premature failure of the weak transition portion.
  • the vertical section 21b, the first bending section 22b and the second bending section 23b are integrally formed structures, and the integrally formed bonding wire 2b can withstand greater stress impact.
  • the angle between the projection of the folded section 22b and the second bending section 23b on the horizontal plane is A2' and the acute angle formed by the tangent line and the vertical line at the starting point of the connection of the first bending section 22b and the vertical section 21b is A1.
  • the size parameters of the vertical segment, the first bending segment and the second bending segment are the same as those in the first embodiment. For details, refer to the content in the first embodiment, which will not be described here.
  • the connecting lines of the two ends of the bonding wire 2b are neither parallel nor perpendicular to the side surface of the LED chip, that is, in FIG. 9, the direction of the bonding wire 2b is neither lateral nor vertical, but inclined. At this time, the installation space of the bonding wire 2b is large, thereby improving the reliability of the bonding of the bonding wire 2b.
  • the LED chip (3a, 3b) in the embodiment is a blue chip, a red chip or a green chip, which can be selected according to requirements, when the first electrical connection region 11b is provided with a plurality of LED chips (3a, 3b).
  • a plurality of LED chips (3a, 3b) can also select LED chips of different light according to requirements.
  • the LED chip is a blue chip
  • the encapsulant is a mixture of a phosphor and a silicone.
  • the encapsulant may also be silicone, silica gel or epoxy.
  • the present invention also discloses an LED lamp comprising the LED device described in Embodiment 1 and/or Embodiment 2 of the present invention, and the lamp of the LED device according to the present invention has a long service life.
  • the present invention also discloses a method for processing a bonding wire of an LED device, which is used for connecting an LED chip and a second electrical connection region, and specifically includes the following steps:
  • the horn is disposed in the direction of the second electrical connection region according to the set trajectory to form a second bending segment, preferably obliquely downwardly moving toward the second electrical connection region, and the second bending segment is disposed at the second electrical Between the connection zone and the first bend section;
  • the welding wire processed by the method has a three-dimensional structure, the first bending segment is bent obliquely upward toward the insulating region; the second bending segment is bent obliquely downward toward the second electrical connecting region, and The second bending section is disposed between the second electrical connection zone and the first bending section.

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Abstract

提供一种发光二极管（LED）器件，包括焊线（2）、LED芯片（3）、用于承载LED芯片（3）的基板（1）以及覆盖LED芯片（3）和焊线（2）的封装胶体，焊线（2）用于连接LED芯片（3）和基板（1），LED芯片（3）通过焊线（2）焊接于焊线区，焊线（2）包括直线部分以及与直线部分相连接的曲线部分，曲线部分在水平面的投影为曲线；或者，LED芯片设有至少两个，焊线（2b）用于连接相邻的两个LED芯片（3a，3b），焊线（2b）包括依次设置的竖直段（21b）、第一弯折段（22b）和第二弯折段（23b），竖直段（21b）、第一弯折段（22b）和第二弯折段（23b）依次连接构成曲线部分，曲线部分在水平面的投影为曲线。还提供一种LED灯及加工焊线的方法。上述LED器件的使用可靠性高。

Description

LED器件、LED灯及加工LED器件焊线的方法 技术领域
本发明涉及半导体技术领域，尤其涉及一种LED器件、应用该LED器件的LED灯以及加工LED器件中焊线的方法。
背景技术
参见附图1所示，现有技术中的LED器件包括基板1a，基板1a上依次设有第一电连接区11a、绝缘区12a和第二电连接区13a，其中LED芯片安装在第一电连接区11a，其中LED芯片和基板需要通过导电焊线连接，从而实现LED芯片的导通，导电焊线的两端分别焊接后需要在基板1a上面覆盖封装胶体，封装胶体将LED芯片和导电焊线覆盖于其内。
但是在使用LED器件时，封装胶体会由于冷热冲击产生热胀冷缩现象，在此过程中，绝缘区12a两侧的第一电连接区11a和第二电连接区13a之间的距离会被拉大，导电焊线也会随着封装胶体被拉伸，容易导致导电焊线被拉断或者导电焊线两端的焊点脱落，造成LED器件失效的现象。
为了解决上述技术问题，现有技术中公开了公告号为CN204204914U的中国实用新型专利，其公开了“LED封装结构”，通过在金线(即上述的导电焊线)的一端设置直线段，其中直线段贴于基板或所述支架上，所述直线段对金线受到的应力有一定的缓冲，以使直线段与相应电极的焊接更为牢固。
但是上述公开专利中的金线(导电焊线)为一个二维结构，其直线段只是对金线(导电焊线)长度方向有一定的应力缓冲作用，而由于金线(导电焊线)是整体被封装胶体包裹，封装胶体的热胀冷缩会对整个导电焊线产生应力冲击，并且应力冲击无固定方向，即金线(导电焊线)会受到来自上、下、左、右或其他不规则方向的应力冲击，若这些应力得不到缓冲，或者只是得到部分的缓 冲，而其它得不到应力缓冲的部分导电焊线会提前损坏，从而大大降低LED器件的整体使用寿命。此外，由于焊线为二维结构，所以在焊线的加工过程中容易压伤芯片电极。
同理，现有技术用于连接相邻的LED芯片的导电焊线也为二维的结构，其同样存在上述问题。
发明内容
本发明所要解决的技术问题在于，提供一种LED器件，解决用于连接LED芯片的焊线压伤电极的问题。
本发明所要解决的技术问题还在于，提供一种LED器件，提高用于连接LED芯片的焊线的应力缓冲能力。
本发明所要解决的技术问题在于，提供一种LED器件，提高LED器件的可靠性及使用寿命。
为了解决上述技术问题，本发明提供了一种LED器件，包括焊线、LED芯片、用于承载LED芯片的基板以及覆盖所述LED芯片和焊线的封装胶体；
所述焊线用于连接LED芯片和基板，所述LED芯片通过焊线焊接于焊线区，所述焊线包括直线部分以及与所述直线部分相连接的曲线部分，所述曲线部分在水平面的投影为曲线；
或者，所述LED芯片设有至少两个，所述焊线用于连接相邻的两个LED芯片，所述焊线包括依次设置的竖直段、第一弯折段和第二弯折段，所述竖直段、第一弯折段和第二弯折段依次连接构成曲线部分，所述曲线部分在水平面的投影为曲线。
作为上述方案的改进，所述基板包括绝缘区以及分别位于绝缘区两侧的第一电连接区和第二电连接区，所述LED芯片安装在所述第一电连接区内；
当所述焊线用于连接LED芯片和基板时，所述直线部分为竖向设置的竖直段，所述曲线部分包括第一弯折段和第二弯折段，所述竖直段与LED芯片的电极连接，所述第二弯折段与第二电连接区连接，所述第一弯折段向绝缘区方向 弯折，所述第二弯折段向第二电连接区方向弯折，所述竖直段、第一弯折段和第二弯折段形成三维结构；
当所述焊线用于连接相邻的两个LED芯片时，所述竖直段与其中一个LED芯片的电极连接，所述第一弯折段向此LED芯片的另一个电极方向弯折，所述第二弯折段与另一个LED芯片的电极连接，所述竖直段、第一弯折段和第二弯折段形成三维结构。
作为上述方案的改进，当所述焊线用于连接LED芯片和第二电连接区时，所述焊线还包括连接段，所述竖直段、第一弯折段、第二弯折段和连接段依次设置，所述连接段远离第二弯折段的至少部分贴设于第二电连接区上。
作为上述方案的改进，所述连接段与竖直段处于同一竖直平面。
作为上述方案的改进，当所述焊线用于连接LED芯片和第二电连接区时，所述第一弯折段向绝缘区方向斜向上弯折，所述第二弯折段向第二电连接区方向斜向下弯折，并且所述第二弯折段设于第二电连接区和第一弯折段之间。
作为上述方案的改进，当所述焊线用于连接LED芯片和第二电连接区时，与竖直段连接的LED芯片为连接芯片，所述竖直段与连接芯片的一个电极连接，所述第一弯折段向连接芯片的另一个电极方向倾斜。
作为上述方案的改进，当所述焊线用于连接LED芯片和第二电连接区时；
所述第一弯折段和第二弯折段过渡的部分位于连接芯片的上方；或者，所述第一弯折段和第二弯折段过渡的部分位于绝缘区和连接芯片之间。
作为上述方案的改进，当所述焊线用于连接第一电连接区内相邻的两个LED芯片时，所述第一弯折段全部位于与竖直段连接的LED芯片的正上方，且第一弯折段斜向上倾斜。
作为上述方案的改进，当所述焊线用于连接第一电连接区内相邻的两个LED芯片时，所述第一弯折段所在的竖直面与绝缘区的边缘线平行。
作为上述方案的改进，当所述焊线用于连接第一电连接区内相邻的两个LED芯片时，焊线的两端的连线与LED芯片的侧面既不平行也不垂直。
作为上述方案的改进，所述LED芯片为蓝光芯片，所述封装胶体为荧光粉 与有机硅混合物。
作为上述方案的改进，所述竖直段的高度为H1，所述H1为30μm-70μm。
作为上述方案的改进，所述焊线最高点与所述LED芯片上表面之间的距离为H2，所述H2为70μm-130μm。
作为上述方案的改进，所述第一弯折段在水平面上的投影的长度为L1，所述L1为100μm-350μm。
作为上述方案的改进，所述连接段在水平面上的投影的长度为L2，所述L2为70μm-150μm。
作为上述方案的改进，所述第一弯折段与竖直段连接的起始点处的切线与竖直线所成的锐角为A1，所述A1为10°-70°。
作为上述方案的改进，所述第一弯折段和第二弯折段在水平面上的投影的夹角为A2，所述A2为100°-160°。
相应的，本发明还公开了一种LED灯，包括本发明所述的LED器件。
相应的，本发明还公开了一种加工LED器件焊线的方法，包括如下步骤：
(1)将金球焊接在LED芯片的电极后，焊头向上运动，线夹放线从而形成竖直段；
(2)焊头按设定轨迹向绝缘区方向运动从而形成第一弯折段；
(3)焊头按设定轨迹向第二电连接区方向设置从而形成第二弯折段，所述第二弯折段设于第二电连接区和第一弯折段之间；
(4)水平运动线夹放线从而形成连接段；
(5)线夹放线关闭，焊头往下运动至第二电连接区进行焊接，所述竖直段、第一弯折段、第二弯折段和连接段形成三维结构。
作为上述方案的改进，所述第一弯折段向绝缘区方向斜向上弯折，所述第二弯折段向第二电连接区方向斜向下弯折，并且所述第二弯折段设于第二电连接区和第一弯折段之间。
实施本发明的实施例，具有如下有益效果：
1、本发明的LED器件采用的焊线具有曲线部分，且曲线部分在水平面的投 影为曲线，从而避免了LED器件被焊线压伤电极导致的缺陷，从而提高LED器件的可靠性及寿命；
2、一般的，焊线与LED芯片的电极连接的部分需要通过烧结这一工序，从而会产生热影响区，经过烧结后的焊线其应力承受能力会变小，本发明通过将此部分的焊线设置成直线的结构，降低此部分的应力冲击，保证此部分的使用寿命能够与焊线的整体寿命相适配，以免此段过早损坏影响整体寿命，另外，焊线的直线部分可以提高其与LED芯片电极的连接牢固性；
3、本发明的焊线具有曲线部分，即使焊线受到来自多个不规则方向的应力冲击，也会有对应的应力缓冲能力，相对于现有技术的二维焊线，本发明的焊线可以消除来自各个方向的应力冲击，有效避免焊线被拉断，从而提高LED器件以及LED灯的整体使用寿命。
附图说明
图1是现有技术LED器件部分结构的剖视图；
图2是本发明实施例一的LED器件的俯视图；
图3是图2中A处的局部放大图；
图4是图2沿DD方向的剖视图；
图5是图4中B处的局部放大图；
图6是图5中F处的局部放大图；
图7是图2沿EE方向的剖视图；
图8是图7中C处的局部放大图；
图9是本发明实施例二的LED器件的俯视图；
图10是图9中A′处的局部放大图；
图11是图9沿B′B′方向的剖视图；
图12是图9沿C′C′方向的剖视图；
图13是图12中D′处的局部放大图；
图14是图12中E′处的局部放大图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述。仅此声明，本发明在文中出现或即将出现的上、下、左、右、前、后、内、外等方位用词，仅以本发明的附图为基准，其并不是对本发明的具体限定。
实施例一
参见附图2至附图8，本实施例公开了一种用于LED器件，包括焊线2、LED芯片3、用于承载LED芯片3的基板1以及覆盖所述LED芯片3和焊线2的封装胶体。
在本实施例中，所述焊线2用于连接LED芯片3和基板1，所述LED芯片3通过焊线2焊接于焊线区，所述焊线2包括直线部分以及与所述直线部分相连接的曲线部分，所述曲线部分在水平面的投影为曲线。所述直线部分的一端与LED芯片3相连接，所述直线部分的另一端与所述曲线部分的一端连接，所述曲线部分的另一端焊接于所述基板1的焊线区。
采用本实施例的LED器件，由于焊线的曲线部分在水平面的投影为曲线，从而避免了LED器件被焊线压伤电极导致的缺陷，从而提高LED器件的可靠性及寿命。
其中，所述基板1包括绝缘区12以及分别位于所述绝缘区12两侧的第一电连接区11和第二电连接区13，所述LED芯片3安装在所述第一电连接区11内。在本实施例中，所述焊线2的一端位于LED芯片的电极30上，另一端位于所述第二电连接区13上，即所述焊线用于连接第一电连接区内的LED芯片和第二电连接区13，其中，将与焊线2连接的LED芯片3定义为连接芯片。
其中，所述直线部分为竖向设置的竖直段21，所述曲线部分包括第一弯折段22和第二弯折段23，以下依次对各段进行详细描述。
所述竖直段21与LED芯片的电极30连接，竖直段21在基板1上的投影形状为焊线2的径向截面形状。焊线2与LED芯片3的电极30连接的端部需要经 过烧结而成，所以其应力承受能力小，本实施例将此部分设置成竖直段21，即垂直的直线段，此时，竖直段21不会受到外界应力影响，从而提高焊线2与LED芯片3的电极30连接部分的使用寿命。
所述第一弯折段22向绝缘区12方向弯折，且优选向绝缘区方向斜向上弯折，即在附图2中，第一弯折段22由竖直段21向第二弯折段23的方向是向左并向斜上方向设置，即第一弯折段22在附图4中显示的是向上或者向下，不是水平的直线。
作为第一弯折段22的优选方案，将与竖直段21连接的LED芯片定义为连接芯片，所述竖直段21与连接芯片的一个电极连接，所述第一弯折段22向连接芯片的另一个电极方向倾斜，即第一弯折段22在附图4中向左上倾斜。所述焊线2受到的外界的应力主要是来自封装胶体的热胀冷缩，若焊线2所处位置的封装胶体较厚，其受到的应力会相对较大，由于LED芯片3需要占一定的空间，所以LED芯片3所处的竖直方位的封装胶体相对较薄，本实施例将第一弯折段22向绝缘区方向向上倾斜弯折可以减少焊线2受到的外界应力。
所述第二弯折段23与第二电连接区13连接，第二弯折段23可以直接与第二电连接区13连接，也可以通过下述的连接段24与第二电连接区13连接，其中，所述第二弯折段23向第二电连接区13方向弯折，且优选为向第二电连接区方向斜向下弯折，其中所述第二弯折段23设于第二电连接区13和第一弯折段22之间，此设计是为了给下述连接段24提供空间。
本实施例所述竖直段、第一弯折段和第二弯折段形成三维结构，即本实施例的焊线2为三维结构，此时，即使焊线2受到来自多个不规则方向的应力冲击，也会有对应的应力缓冲能力，例如，当焊线2受到水平方向的应力时，第一弯折段22和第二弯折段23由于为上凸的弯折结构，其具有向两头方向拉伸的缓冲空间，以使应力得到相应的缓冲，当焊线2受到上下方向的应力时，由于第一弯折段22、第二弯折段23以及竖直段21形成三维结构，此时，第一弯折段22和第二弯折段23的外凸部分可以上下缓冲，其受到竖直段21的限制较小，从而实现应力的缓冲，同理，本实施例的焊线2受到其它应力冲击时，其 可以通过三维结构得到各个方向的缓冲，相对于现有技术的二维焊线，本实施例的焊线2可以消除来自各个方向的应力冲击，有效避免焊线2被拉断，从而提高焊线2和LED器件的使用寿命。
此外，为了提高焊线2和第二电连接区13连接的牢固性，本实施例所述的焊线2还包括连接段24，所述竖直段21、第一弯折段22、第二弯折段23和连接段24依次设置，所述连接段24远离第二弯折段23的至少部分贴设于第二电连接区13上。此时，所述连接段24包括远离第二弯折段23的至少部分为贴设于第二电连接区13的直线段，所述直线段与所述第二电连接区13连接。
由于有至少部分贴设于第二电连接区13的直线段，即使连接段24受到第二弯折段23向上的拉力或者其他应力时，也可以通过直线段有一定的缓冲，不会将此拉力直接传送至焊线与第二电连接区连接的端部，从而增强第二电连接区与焊线2连接的牢固性。
优选的，所述连接段24与竖直段21处于同一竖直平面，即所述竖直段21和连接段24在水平面上的投影处于同一直线上。本实施例将连接段24与竖直段21设置于同一竖直平面，可以进一步提高连接段24与第二电连接区连接的牢固性。其中，第一弯折段22、第二弯折段23和连接段24以及竖直段21形成类似三角形的三维结构，可以进一步提高焊线的牢固性。
参见附图3所示，所述竖直段21、第一弯折段22、第二弯折段23和连接段24依次连接形成曲线部分，所述曲线部分在水平面的投影为曲线，其中所述竖直段21、第一弯折段22、第二弯折段23和连接段24优选依次顺滑曲线过渡连接，通过顺滑曲线过渡连接方式可以进一步地提高焊线2的应力承受能力，避免薄弱的过渡部分过早的损坏。另外，所述竖直段21、第一弯折段22、第二弯折段23和连接段24为一体成型结构，一体成型的焊线2能够承受更大的应力冲击。
需要说明的是，焊线2的第一弯折段22与第二弯折段23连接的部位(即第一弯折段22的上端)为拐点端，拐点端是焊线2弯折相对较大的部位，在产生拐点端的时候，其已经承受一定的加工损伤，因此较为脆弱，为了保证焊线2 的整体使用寿命，本实施例通过以下两种优选实施方式提高拐点端的应力承受能力。
第一种实施方式，所述第一弯折段22和第二弯折段23过渡的部分位于连接芯片的上方；
第二种实施方式，所述第一弯折段22和第二弯折段23过渡的部分位于绝缘区12和连接芯片之间的空间。
当第一弯折段22与第二弯折段23连接的部分(即拐点端)位于LED芯片3上方时，则第一弯折段22整个均处于LED芯片3的上方，此时，第一弯折段22所处位置下方的封装胶体相对最薄，下方封装胶体越薄，则焊线2受到的热膨胀应力越小；但是有的LED芯片的电极30位于LED芯片3边缘，LED芯片3的宽度无法满足第一弯折段22的拐点端位于LED芯片3的上方这一条件，在这种情况下，所述第一弯折段22与第二弯折段23连接的部分优选位于绝缘区12和LED芯片3之间，其中绝缘区12处的应力最大，本实施例将拐点端优选位于绝缘区12和LED芯片3之间，避开将薄弱的拐点端设于绝缘区12上方，以免拐点端影响焊线2的整体使用寿命。
根据发明人多次的实验验证，焊线2各段的参数对其使用寿命也有重要影响，以下是发明人多次试验得出的较优的参数选择。
(1)所述竖直段21的高度为H1，所述H1为30μm-70μm，所述H1进一步地优选范围为50μm-60μm；
(2)所述焊线2最高点与LED芯片3上表面之间的距离为H2，所述H2为70μm-130μm，所述H2进一步地优选范围为80μm-120μm；
(3)所述第一弯折段22在水平面上的投影的长度为L1，所述L1为100μm-350μm，所述L1进一步地优选范围为120μm-320μm；
(4)所述连接段24在水平面上的投影的长度为L2，所述L2为70μm-150μm，所述L2进一步地优选范围为90μm-120μm；
(5)所述第一弯折段22和第二弯折段23在水平面上的投影的夹角为A2，所述A2为100°-160°，所述A2进一步地优选范围为115°-150°。
为了保证第一弯折段22与竖直段21之间的部位能够达到应力承受能力，本实施例对第一弯折段22的起始点作了一定的限定，即所述第一弯折段22与竖直段21连接的起始点处的切线与竖直线所成的锐角为A1，所述A1为10°-70°，所述A1进一步地优选范围为20°-60°，A1过大会导致焊线2热影响区弯曲受损，夹角过小则对于器件内部向上的应力无法形成有效的缓冲，应力会直接拉扯焊线2造成焊线2的热影响区断裂。
本实施例所述焊线2的各段处于上述范围时，焊线2形成的三维结构可以较好地消除来自各个方向的应力，防止焊线2被拉断，从而提高焊线2的使用寿命。
此外，本实施例所述LED芯片3为蓝光芯片、红光芯片或绿光芯片，可以根据需求选择，当第一电连接区11设有多个LED芯片3时，多个LED芯片3也可以根据需求选择不同光的LED芯片。
作为LED芯片3和封装胶体的优选方案，所述LED芯片为蓝光芯片，所述封装胶体为荧光粉与有机硅混合物。所述封装胶体也可以为硅树脂、硅胶或环氧树脂。
实施例二
参见附图9至附图14，本实施例公开了一种LED器件，本实施例公开的LED器件与实施例一所不同的是，本实施例的LED器件中的焊线用于连接两个LED芯片。以下对本实施例的LED器件进行详细描述。
本实施例的LED器件包括焊线2b、LED芯片(3a、3b)、用于承载LED芯片(3a、3b)的基板1b以及覆盖所述LED芯片(3a、3b)和焊线2b的封装胶体，其中，所述LED芯片设有至少两个，所述焊线2b用于连接相邻的两个LED芯片(3a、3b)，所述焊线2b包括依次设置的竖直段21b、第一弯折段22b和第二弯折段23b，所述竖直段21b、第一弯折段22b和第二弯折段23b依次连接构成曲线部分，所述曲线部分在水平面的投影为曲线。
采用本实施例的LED器件，由于竖直段21b、第一弯折段22b和第二弯折段23b依次连接构成曲线部分，且曲线部分在水平面的投影为曲线，从而避免了 LED器件被焊线压伤电极导致的缺陷，从而提高LED器件的可靠性及寿命。
其中，所述基板1b包括绝缘区12b以及分别位于所述绝缘区12b两侧的第一电连接区11b和第二电连接区13b，所述LED芯片(3a、3b)安装在所述第一电连接区11b内。在本实施例中，所述焊线2b的两端分别连接相邻的LED芯片的电极，此相邻的LED芯片分别定义为第一LED芯片3a和第二LED芯片3b。
在本实施例中，所述竖直段21b与其中一个LED芯片的电极连接，所述第一弯折段22b向此LED芯片的另一个电极方向弯折，所述第二弯折段23b与另一个LED芯片连接，所述第一弯折段22b和第二弯折段23b在相邻的LED芯片之间形成三维结构。与竖直段21b连接的LED芯片为第一LED芯片3a，与第二弯折段23b连接的LED芯片为第二LED芯片3b。
其中，竖直段21b在第一LED芯片3a上的投影形状为焊线2b的径向截面形状。焊线2b与第一LED芯片3a的电极连接的端部需要经过烧结而成，所以其应力承受能力小，本发明将此部分设置成竖直段21b，可以提高焊线2b与第一芯片电极110连接的那部分的可靠性。
需要说明的是，由于相邻的LED芯片的位置的局限性，所以第一弯折段22b和第二弯折段23b的水平空间受到限制，而两LED芯片之间的空间为封装胶体最厚的部分，所以应该将第一弯折段22b的两端(两个拐点部)避开，而由于第二LED芯片3b的电极的位置会对第二弯折段23b的安装空间有一定的限制。为了解决这个问题，本实施例所述的第一弯折段全部位于与竖直段连接的LED芯片的正上方，且第一弯折段斜向上倾斜。此时，焊线2b的两个拐点部均处于封装胶体较薄的部位，拐点部受到的应力冲击达到最小，从而提高拐点部的使用寿命，以使焊线2b的整体寿命较为平均，且本实施例优选将第一弯折段22b限位于第一LED芯片3a的两个电极之间。
作为更优选的方案，所述第一弯折段22b所在的竖直面与绝缘区的边缘线平行，此时，焊线2b的上端离第一LED芯片3a的边缘最远，对此端达到最佳的保护状态，并且可以增加第二弯折段23b的水平段距离，从而提高第一弯折段22b和第二弯折段23b的应力缓冲能力。
其中，所述竖直段21b、第一弯折段22b和第二弯折段23b依次连接构成曲线部分，所述曲线部分在水平面的投影为曲线，并且第一弯折段22b与竖直段21b和第二弯折段23b均为顺滑曲线过渡连接，通过顺滑曲线过渡连接方式可以进一步地提高焊线2b的应力承受能力，避免薄弱的过渡部分过早的损坏。另外，所述竖直段21b、第一弯折段22b和第二弯折段23b为一体成型结构，一体成型的焊线2b能够承受更大的应力冲击。
本实施例中的竖直段21b的高度H1′、焊线2b最高点与LED芯片上表面之间的距离H2′、第一弯折段22b在水平面上的投影的长度L1′、第一弯折段22b和第二弯折段23b在水平面上的投影的夹角为A2′以及第一弯折段22b与竖直段21b连接的起始点处的切线与竖直线所成的锐角为A1和实施例一中的竖直段、第一弯折段和第二弯折段的尺寸参数相同，具体详见实施例一中的内容，此处不作描述。
在本实施例中，焊线2b的两端的连线与LED芯片的侧面既不平行也不垂直，即在附图9中，焊线2b的走向既不是横向，也不是竖向，而是倾斜的结构，此时，焊线2b的安装空间较大，从而提高焊线2b连接的可靠性。
此外，本实施例中所述LED芯片(3a、3b)为蓝光芯片、红光芯片或绿光芯片，可以根据需求选择，当第一电连接区11b设有多个LED芯片(3a、3b)时，多个LED芯片(3a、3b)也可以根据需求选择不同光的LED芯片。
作为LED芯片(3a、3b)和封装胶体的优选方案，所述LED芯片为蓝光芯片，所述封装胶体为荧光粉与有机硅混合物。所述封装胶体也可以为硅树脂、硅胶或环氧树脂。
实施例三
相应的，本发明还公开了一种LED灯，其包括本发明实施例一和/或实施例二中所述的LED器件，采用本发明所述的LED器件的灯，其使用寿命长。
实施例四
相应的，本发明还公开了一种加工LED器件的焊线的方法，此焊线用于连接LED芯片和第二电连接区，其具体包括如下步骤：
(1)将金球焊接在LED芯片的电极后，焊头向上运动，线夹放线从而形成竖直段；
(2)焊头按设定轨迹向绝缘区方向运动从而形成第一弯折段，优选为斜向上运动；
(3)焊头按设定轨迹向第二电连接区方向设置从而形成第二弯折段，优选向第二电连接区方向斜向下运动，所述第二弯折段设于第二电连接区和第一弯折段之间；
(4)水平运动线夹放线从而形成连接段；
(5)线夹放线关闭，焊头往下运动至第二电连接区进行焊接，所述竖直段、第一弯折段、第二弯折段和连接段形成三维结构。
采用本方法加工出的焊线为三维结构，所述第一弯折段向绝缘区方向斜向上弯折；所述第二弯折段向第二电连接区方向斜向下弯折，并且所述第二弯折段设于第二电连接区和第一弯折段之间。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。

Claims (20)

  1. 一种LED器件，包括焊线、LED芯片、用于承载LED芯片的基板以及覆盖所述LED芯片和焊线的封装胶体，其特征在于：
    所述焊线用于连接LED芯片和基板，所述LED芯片通过焊线焊接于焊线区，所述焊线包括直线部分以及与所述直线部分相连接的曲线部分，所述曲线部分在水平面的投影为曲线；
    或者，所述LED芯片设有至少两个，所述焊线用于连接相邻的两个LED芯片，所述焊线包括依次设置的竖直段、第一弯折段和第二弯折段，所述竖直段、第一弯折段和第二弯折段依次连接构成曲线部分，所述曲线部分在水平面的投影为曲线。
  2. 根据权利要求1所述的LED器件，其特征在于，所述基板包括绝缘区以及分别位于绝缘区两侧的第一电连接区和第二电连接区，所述LED芯片安装在所述第一电连接区内；
    当所述焊线用于连接LED芯片和基板时，所述直线部分为竖向设置的竖直段，所述曲线部分包括第一弯折段和第二弯折段，所述竖直段与LED芯片的电极连接，所述第二弯折段与第二电连接区连接，所述第一弯折段向绝缘区方向弯折，所述第二弯折段向第二电连接区方向弯折，所述竖直段、第一弯折段和第二弯折段形成三维结构；
    当所述焊线用于连接相邻的两个LED芯片时，所述竖直段与其中一个LED芯片的电极连接，所述第一弯折段向此LED芯片的另一个电极方向弯折，所述第二弯折段与另一个LED芯片的电极连接，所述竖直段、第一弯折段和第二弯折段形成三维结构。
  3. 根据权利要求2所述的LED器件，其特征在于，当所述焊线用于连接LED芯片和第二电连接区时，所述焊线还包括连接段，所述竖直段、第一弯折段、 第二弯折段和连接段依次设置，所述连接段远离第二弯折段的至少部分贴设于第二电连接区上。
  4. 根据权利要求3所述的LED器件，其特征在于，所述连接段与竖直段处于同一竖直平面。
  5. 根据权利要求2所述的LED器件，其特征在于，当所述焊线用于连接LED芯片和第二电连接区时，所述第一弯折段向绝缘区方向斜向上弯折，所述第二弯折段向第二电连接区方向斜向下弯折，并且所述第二弯折段设于第二电连接区和第一弯折段之间。
  6. 根据权利要求2所述的用于LED器件，其特征在于，当所述焊线用于连接LED芯片和第二电连接区时，与竖直段连接的LED芯片为连接芯片，所述竖直段与连接芯片的一个电极连接，所述第一弯折段向连接芯片的另一个电极方向倾斜。
  7. 根据权利要求2所述的LED器件，其特征在于，当所述焊线用于连接LED芯片和第二电连接区时；
    所述第一弯折段和第二弯折段过渡的部分位于连接芯片的上方；或者，所述第一弯折段和第二弯折段过渡的部分位于绝缘区和连接芯片之间。
  8. 根据权利要求2所述的LED器件，其特征在于，当所述焊线用于连接第一电连接区内相邻的两个LED芯片时，所述第一弯折段全部位于与竖直段连接的LED芯片的正上方，且第一弯折段斜向上倾斜。
  9. 根据权利要求2所述的LED器件，其特征在于，当所述焊线用于连接第一电连接区内相邻的两个LED芯片时，所述第一弯折段所在的竖直面与绝缘区 的边缘线平行。
  10. 根据权利要求2所述的LED器件，其特征在于，当所述焊线用于连接第一电连接区内相邻的两个LED芯片时，焊线的两端的连线与LED芯片的侧面既不平行也不垂直。
  11. 根据权利要求2所述的LED器件，其特征在于，所述LED芯片为蓝光芯片，所述封装胶体为荧光粉与有机硅混合物。
  12. 根据权利要求2所述的用于LED器件，其特征在于，所述竖直段的高度为H1，所述H1为30μm-70μm。
  13. 根据权利要求2所述的用于LED器件，其特征在于，所述焊线最高点与所述LED芯片上表面之间的距离为H2，所述H2为70μm-130μm。
  14. 根据权利要求2所述的LED器件，其特征在于，所述第一弯折段在水平面上的投影的长度为L1，所述L1为100μm-350μm。
  15. 根据权利要求3所述的LED器件，其特征在于，所述连接段在水平面上的投影的长度为L2，所述L2为70μm-150μm。
  16. 根据权利要求2所述的LED器件，其特征在于，所述第一弯折段与竖直段连接的起始点处的切线与竖直线所成的锐角为A1，所述A1为10°-70°。
  17. 根据权利要求2所述的LED器件，其特征在于，所述第一弯折段和第二弯折段在水平面上的投影的夹角为A2，所述A2为100°-160°。
  18. 一种LED灯，其特征在于，包括权利要求1或2所述的LED器件。
  19. 一种加工权利要求3所述的LED器件焊线的方法，其特征在于，包括如下步骤：
    (1)将金球焊接在LED芯片的电极后，焊头向上运动，线夹放线从而形成竖直段；
    (2)焊头按设定轨迹向绝缘区方向运动从而形成第一弯折段；
    (3)焊头按设定轨迹向第二电连接区方向设置从而形成第二弯折段，所述第二弯折段设于第二电连接区和第一弯折段之间；
    (4)水平运动线夹放线从而形成连接段；
    (5)线夹放线关闭，焊头往下运动至第二电连接区进行焊接，所述竖直段、第一弯折段、第二弯折段和连接段形成三维结构。
  20. 根据权利要求19所述的加工焊线的方法，其特征在于，所述第一弯折段向绝缘区方向斜向上弯折，所述第二弯折段向第二电连接区方向斜向下弯折，并且所述第二弯折段设于第二电连接区和第一弯折段之间。
PCT/CN2017/109198 2016-11-03 2017-11-02 Led器件、led灯及加工led器件焊线的方法 WO2018082629A1 (zh)

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CN201621445862.6U CN206388730U (zh) 2016-12-27 2016-12-27 一种led器件及led灯
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