WO2018061109A1 - Procédé pour production de dispositif semi-conducteur - Google Patents

Procédé pour production de dispositif semi-conducteur Download PDF

Info

Publication number
WO2018061109A1
WO2018061109A1 PCT/JP2016/078629 JP2016078629W WO2018061109A1 WO 2018061109 A1 WO2018061109 A1 WO 2018061109A1 JP 2016078629 W JP2016078629 W JP 2016078629W WO 2018061109 A1 WO2018061109 A1 WO 2018061109A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
gas
film
substrate
fluorine
Prior art date
Application number
PCT/JP2016/078629
Other languages
English (en)
Japanese (ja)
Inventor
小川　有人
篤郎 清野
Original Assignee
株式会社日立国際電気
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立国際電気 filed Critical 株式会社日立国際電気
Priority to PCT/JP2016/078629 priority Critical patent/WO2018061109A1/fr
Priority to JP2018541775A priority patent/JP6639691B2/ja
Publication of WO2018061109A1 publication Critical patent/WO2018061109A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device.
  • an electrode for a word line of a MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • a barrier film As a process of manufacturing a semiconductor device (device) for forming a control gate film of a flash memory, an electrode for a word line of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and a barrier film, it is applied to a substrate in a processing chamber.
  • a substrate process performed by supplying a process gas, for example, a film formation process or an oxidation process may be performed.
  • a W film may be used as a metal film for a control gate of a NAND flash memory having a three-dimensional structure.
  • WF6 gas which is a fluorine (F) -containing source gas
  • a metal nitride film (for example, a TiN film) is used as a barrier film between the insulating film and the W film. This TiN film plays a role of improving adhesion between the W film and the insulating film, and is required to suppress diffusion of F contained in the source gas used when forming the W film into the insulating film.
  • An object of the present invention is to diffuse fluorine into an insulating film when a metal film is formed using a fluorine-containing metal source gas on a substrate having an insulating film and a barrier film formed on the insulating film on the surface. It is to provide a technology that suppresses this.
  • an oxidizing gas is supplied to a substrate having a metal nitride film containing a first metal element formed on an insulating film to oxidize the surface of the metal nitride film, A step of forming a metal oxide layer on the surface of the metal nitride film; and a fluorine-containing metal raw material containing a second metal element different from the first metal element and fluorine for the substrate on which the metal oxide layer is formed Supplying a gas to form a metal film containing a second metal element on the substrate, and the step of forming the metal film includes a first reducing gas and the substrate.
  • FIG. 1 is a schematic configuration diagram of a processing furnace of a substrate processing apparatus preferably used in an embodiment of the present invention, and is a view showing a processing furnace part in a longitudinal sectional view.
  • FIG. 2 is a schematic cross-sectional view taken along line AA in FIG.
  • FIG. 3 is a block diagram showing a configuration of a controller included in the substrate processing apparatus shown in FIG.
  • FIG. 4A is a diagram showing a preferred film formation flow in the embodiment of the present invention
  • FIG. 4B is a diagram showing a conventional film formation flow.
  • FIG. 5 is a diagram showing a suitable gas supply timing in the film forming process according to the first embodiment of the present invention.
  • FIG. 6 is a graph comparing the amount of TiN shaving for the examples and comparative examples.
  • FIG. 7 is a graph showing the relationship between the amount of TiN shaving and the amount of F component remaining at the TiN / W interface for the example.
  • an ONO film (silicon oxide film (SiO 2 film) / silicon nitride film (SiN film) / silicon oxide film (SiO 2 ) structure) is applied as a structure for accumulating charges.
  • W may be applied to the control gate for injecting charges into the ONO as described above.
  • WF 6 gas is used when depositing W, F adheres to the interface between the TiN film, which is a barrier film, and the W film during the deposition of W, and diffuses into the ONO film during the heat treatment performed in the subsequent process. I had to do it.
  • the inventors have intensively researched and formed a TiON film by oxidizing the TiN film, so that when the W film is formed using WF 6 gas, F easily adheres and sublimates, and F becomes TiN / W It has been found that adhesion to the interface can be suppressed, and that diffusion into the ONO film in a later step can be suppressed.
  • the W film is formed without oxidizing the TiN film, the underlying TiN film (TiN at the TiN / W interface) may be scraped (sublimated) by a certain value. The reason is considered that F contained in the WF 6 gas is etching the TiN film.
  • the titanium fluorinated nitride deposited (bonded) to TiN to become TiFx is also sublimated at the same time. However, a certain amount of F may remain at the TiN / W interface.
  • the inventors oxidize the TiN film, which is a metal nitride film, and provide a metal oxide layer having an etching rate higher than that of the TiN film at the interface, thereby combining F with the metal oxide layer to form a metal fluoride oxide. It has been devised that the amount of F remaining at the TiN / W interface can be reduced if it can be (fluorinated metal oxide) and can be sublimated during W film formation.
  • the metal oxide layer is a layer containing Ti and oxygen (O) formed by oxidizing the TiN film, and includes a titanium oxide layer (TiOx layer) and a titanium oxynitride layer (TiON layer).
  • the interface of the TiN film may not be completely oxidized, and a certain amount of TiN film may be left (that is, a state in which TiN and a layer containing Ti and O are mixed).
  • a metal film such as a W film using a F-containing gas
  • the TiN film is oxidized before the W film is formed, whereby F is an oxide of the TiN film.
  • the amount of F remaining at the TiN / W interface can be reduced.
  • the barrier TiN film can be made thin.
  • the substrate processing apparatus 10 is configured as an example of an apparatus used in a semiconductor device manufacturing process.
  • the substrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating means (heating mechanism, heating system).
  • the heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.
  • An outer tube 203 that constitutes a reaction vessel (processing vessel) concentrically with the heater 207 is disposed inside the heater 207.
  • the outer tube 203 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened.
  • a manifold (inlet flange) 209 is disposed below the outer tube 203 concentrically with the outer tube 203.
  • the manifold 209 is made of a metal such as stainless steel (SUS), for example, and is formed in a cylindrical shape with an upper end and a lower end opened.
  • An O-ring 220a as a seal member is provided between the upper end portion of the manifold 209 and the outer tube 203. As the manifold 209 is supported by the heater base, the outer tube 203 is installed vertically.
  • An inner tube 204 that constitutes a reaction vessel is disposed inside the outer tube 203.
  • the inner tube 204 is made of a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened.
  • a processing vessel (reaction vessel) is mainly constituted by the outer tube 203, the inner tube 204, and the manifold 209.
  • a processing chamber 201 is formed in a cylindrical hollow portion of the processing container (inside the inner tube 204).
  • the processing chamber 201 is configured to be able to accommodate wafers 200 as substrates in a state where they are arranged in multiple stages in a vertical posture in a horizontal posture by a boat 217 described later.
  • nozzles 410, 420, and 430 are provided so as to penetrate the side wall of the manifold 209 and the inner tube 204.
  • Gas supply pipes 310 and 330 as gas supply lines are connected to the nozzles 410 and 430, respectively.
  • the nozzle 420 is connected to gas supply pipes 320a and 320b as gas supply lines.
  • the substrate processing apparatus 10 is provided with the three nozzles 410, 420, and 430 and the four gas supply pipes 310, 320 a, 320 b, and 330, and a plurality of types of gases into the processing chamber 201. It is comprised so that it can supply.
  • the processing furnace 202 of this embodiment is not limited to the above-mentioned form.
  • the gas supply pipes 310, 320a, 320b, and 330 are provided with mass flow controllers (MFCs) 312, 322a, 320b, and 332, respectively, which are flow controllers (flow controllers) from the upstream side.
  • MFCs mass flow controllers
  • the gas supply pipes 310, 320, and 330 are provided with valves 314, 324a, 320b, and 334, which are on-off valves, respectively.
  • Gas supply pipes 510, 520, and 530 for supplying an inert gas are connected to the downstream sides of the valves 314, 324a, 320b, and 334 of the gas supply pipes 310, 320a, 320b, and 330, respectively.
  • the gas supply pipes 510, 520, and 530 are provided with MFCs 512, 522, and 532 that are flow rate controllers (flow rate control units) and valves 514, 524, and 534 that are on-off valves in order from the upstream side.
  • MFCs 512, 522, and 532 that are flow rate controllers (flow rate control units) and valves 514, 524, and 534 that are on-off valves in order from the upstream side.
  • Nozzles 410 and 430 are connected to the distal ends of the gas supply pipes 310 and 330, respectively.
  • the nozzle 420 is connected after the gas supply pipe 320a and the gas supply pipe 320b are connected.
  • the nozzles 410, 420, and 430 are configured as L-shaped nozzles, and the horizontal portion thereof is provided so as to penetrate the side wall of the manifold 209 and the inner tube 204.
  • the vertical portions of the nozzles 410, 420, and 430 are provided inside a channel-shaped (groove-shaped) preliminary chamber 201 a that protrudes radially outward of the inner tube 204 and extends in the vertical direction. In the preliminary chamber 201a, it is provided along the inner wall of the inner tube 204 upward (upward in the arrangement direction of the wafers 200).
  • the nozzles 410, 420, and 430 are provided so as to extend from the lower region of the processing chamber 201 to the upper region of the processing chamber 201, and a plurality of gas supply holes 410 a, 420 a, 430 a are respectively provided at positions facing the wafer 200. Is provided. Accordingly, the processing gas is supplied to the wafer 200 from the gas supply holes 410a, 420a, and 430a of the nozzles 410, 420, and 430, respectively.
  • a plurality of the gas supply holes 410a, 420a, 430a are provided from the lower part to the upper part of the inner tube 204, have the same opening area, and are provided at the same opening pitch.
  • the gas supply holes 410a, 420a, and 430a are not limited to the above-described form.
  • the opening area may be gradually increased from the lower part of the inner tube 204 toward the upper part. Thereby, the flow rate of the gas supplied from the gas supply holes 410a, 420a, 430a can be made more uniform.
  • a plurality of gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430 are provided at a height position from the lower part to the upper part of the boat 217 described later. Therefore, the processing gas supplied into the processing chamber 201 from the gas supply holes 410 a, 420 a, 430 a of the nozzles 410, 420, 430 is accommodated in the wafer 200 accommodated from the lower part to the upper part of the boat 217, that is, the boat 217. Supplied to the entire area of the wafer 200.
  • the nozzles 410, 420, and 430 may be provided so as to extend from the lower region to the upper region of the processing chamber 201, but are preferably provided so as to extend to the vicinity of the ceiling of the boat 217.
  • an oxidizing gas oxygen-containing gas, O-containing gas
  • oxygen (O 2 ) is used as the oxidizing gas.
  • a first reducing gas is supplied as a processing gas into the processing chamber 201 through the MFC 322a, the valve 324a, and the nozzle 420.
  • the first reducing gas for example, diborane (B 2 H 6 ), which is a B-containing gas containing boron (B), is used.
  • a second reducing gas different from the first reducing gas is supplied from the gas supply pipe 320b into the processing chamber 201 through the MFC 322b, the valve 324b, and the nozzle 420 as the processing gas.
  • the second reducing gas for example, hydrogen (H 2 ) that is an H-containing gas containing hydrogen atoms (H) is used.
  • a fluorine-containing metal source gas containing metal element and fluorine (F) (also referred to as a metal-containing fluoride gas) as a process gas passes through the MFC 332, the valve 334, and the nozzle 430 to enter the process chamber 201.
  • F fluorine-containing metal source gas
  • tungsten hexafluoride (WF 6 ) containing tungsten (W) as a metal element is used.
  • nitrogen (N 2 ) gas as an inert gas passes through the MFCs 512, 522, 532, valves 514, 524, 534, and nozzles 410, 420, 430, respectively. 201 is supplied.
  • N 2 gas used as the inert gas
  • the inert gas for example, argon (Ar) gas, helium (He) gas, neon (Ne) gas other than N 2 gas.
  • a rare gas such as xenon (Xe) gas may be used.
  • a processing gas supply system is mainly configured by the gas supply pipes 310, 320a, 320b, 330, the MFCs 312, 322a, 322b, 332, the valves 314, 324a, 324b, 334, and the nozzles 410, 420, 430. , 420, 430 may be considered as the processing gas supply system.
  • the processing gas supply system may be simply referred to as a gas supply system.
  • the oxidizing gas supply system is mainly configured by the gas supply pipe 310, the MFC 312 and the valve 314.
  • the nozzle 410 may be included in the oxidizing gas supply system.
  • the gas supply pipes 320a and 320b, the MFCs 322a and 322b, and the valves 324a and 324b mainly constitute a reducing gas supply system, but the nozzle 320 is used as the reducing gas supply system. You may think including it. Further, the gas supply pipe 320a, MFC 322a, and the valve 324a may be referred to as a first reducing gas supply system, and the gas supply pipe 320b, MFC 322b, and the valve 324b are mainly referred to as a second reducing gas supply system. Also good.
  • the source gas supply system is mainly configured by the gas supply pipe 330, the MFC 332, and the valve 334, but the nozzle 430 may be included in the source gas supply system.
  • the source gas supply system can also be referred to as a metal-containing source gas supply system.
  • an inert gas supply system is mainly configured by the gas supply pipes 510, 520, and 530, the MFCs 512, 522, and 532, and the valves 514, 524, and 534.
  • the inert gas supply system can also be referred to as a purge gas supply system, a dilution gas supply system, or a carrier gas supply system.
  • the gas supply method is performed in an annular vertically long space defined by the inner wall of the inner tube 204 and the ends of the plurality of wafers 200, that is, in the spare chamber 201a in a cylindrical space.
  • Gas is conveyed through nozzles 410, 420, and 430 arranged in the above. Then, gas is jetted into the inner tube 204 from a plurality of gas supply holes 410a, 420a, 430a provided at positions facing the wafers of the nozzles 410, 420, 430.
  • a source gas or the like is ejected in a direction parallel to the surface of the wafer 200, that is, in a horizontal direction, by the gas supply hole 410a of the nozzle 410, the gas supply hole 420a of the nozzle 420, and the gas supply hole 430a of the nozzle 430. ing.
  • the exhaust hole (exhaust port) 204a is a through-hole formed in a side wall of the inner tube 204 and facing the nozzles 410, 420, 430, that is, a position 180 degrees opposite to the spare chamber 201a. It is a slit-like through-hole that is elongated in the vertical direction. Therefore, the gas that has been supplied into the processing chamber 201 from the gas supply holes 410a, 420a, and 430a of the nozzles 410, 420, and 430a and has flowed on the surface of the wafer 200, that is, the residual gas (residual gas) is exhausted through the exhaust holes 204a.
  • the exhaust hole 204a is provided at a position facing the plurality of wafers 200 (preferably a position facing from the upper part to the lower part of the boat 217), and from the gas supply holes 410a, 420a, 430a to the wafer 200 in the processing chamber 201.
  • the gas supplied in the vicinity flows in the horizontal direction, that is, in the direction parallel to the surface of the wafer 200, and then flows into the exhaust path 206 through the exhaust holes 204 a. That is, the gas remaining in the processing chamber 201 is exhausted in parallel to the main surface of the wafer 200 through the exhaust hole 204a.
  • the exhaust hole 204a is not limited to being configured as a slit-like through hole, and may be configured by a plurality of holes.
  • the manifold 209 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201.
  • a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201
  • an APC (Auto Pressure Controller) valve 243 a vacuum pump as a vacuum exhaust device 246 is connected.
  • the APC valve 243 can open and close the vacuum pump 246 while the vacuum pump 246 is operated, and can stop the vacuum exhaust and stop the vacuum exhaust in the processing chamber 201. Further, the APC valve 243 can be operated while the vacuum pump 246 is operated. By adjusting the opening, the pressure in the processing chamber 201 can be adjusted.
  • An exhaust system that is, an exhaust line, is mainly configured by the exhaust hole 204a, the exhaust path 206, the exhaust pipe 231, the APC valve 243, and the pressure sensor 245. Note that the vacuum pump 246 may be included in the exhaust system.
  • a seal cap 219 is provided as a furnace opening lid capable of airtightly closing the lower end opening of the manifold 209.
  • the seal cap 219 is configured to contact the lower end of the manifold 209 from the lower side in the vertical direction.
  • the seal cap 219 is made of a metal such as SUS and is formed in a disk shape.
  • an O-ring 220b is provided as a seal member that comes into contact with the lower end of the manifold 209.
  • a rotation mechanism 267 that rotates the boat 217 that accommodates the wafers 200 is installed on the seal cap 219 on the opposite side of the processing chamber 201.
  • a rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217.
  • the rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217.
  • the seal cap 219 is configured to be lifted and lowered in the vertical direction by a boat elevator 115 as a lifting mechanism vertically installed outside the outer tube 203.
  • the boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by moving the seal cap 219 up and down.
  • the boat elevator 115 is configured as a transfer device (transfer mechanism) that transfers the boat 217 and the wafer 200 accommodated in the boat 217 into and out of the processing chamber 201.
  • the boat 217 as the substrate support is configured to support a plurality of, for example, 25 to 200 wafers 200 in a horizontal posture and in a multi-stage by aligning them in the vertical direction with their centers aligned. It is configured to arrange at intervals.
  • the boat 217 is made of a heat-resistant material such as quartz or SiC.
  • a heat insulating plate 218 made of a heat resistant material such as quartz or SiC is supported in multiple stages (not shown) in a horizontal posture. With this configuration, heat from the heater 207 is not easily transmitted to the seal cap 219 side.
  • this embodiment is not limited to the above-mentioned form.
  • a heat insulating cylinder configured as a cylindrical member made of a heat resistant material such as quartz or SiC may be provided.
  • a temperature sensor 263 as a temperature detector is installed in the inner tube 204, and by adjusting the energization amount to the heater 207 based on the temperature information detected by the temperature sensor 263,
  • the temperature inside the processing chamber 201 is configured to have a desired temperature distribution.
  • the temperature sensor 263 is configured in an L shape similarly to the nozzles 410, 420, and 430, and is provided along the inner wall of the inner tube 204.
  • the controller 121 which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.
  • the RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via an internal bus.
  • an input / output device 122 configured as a touch panel or the like is connected to the controller 121.
  • the storage device 121c includes, for example, a flash memory, a HDD (Hard Disk Drive), and the like.
  • a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of a semiconductor device manufacturing method described later, and the like are stored in a readable manner.
  • the process recipe is a combination of processes so that a predetermined result can be obtained by causing the controller 121 to execute each step (each step) in the semiconductor device manufacturing method described later, and functions as a program.
  • the process recipe, the control program, and the like are collectively referred to simply as a program.
  • the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.
  • the I / O port 121d includes the above-described MFC 312, 322a, 322b, 332, 512, 522, 532, valves 314, 324a, 324b, 334, 514, 524, 534, a pressure sensor 245, an APC valve 243, a vacuum pump 246,
  • the heater 207, temperature sensor 263, rotation mechanism 267, boat elevator 115, and the like are connected.
  • the CPU 121a is configured to read and execute a control program from the storage device 121c and to read a recipe and the like from the storage device 121c in response to an operation command input from the input / output device 122 or the like.
  • the CPU 121a adjusts the flow rates of various gases by the MFCs 312, 322a, 322b, 332, 512, 522, and 532, and opens and closes the valves 314, 324a, 324b, 334, 514, 524, and 534 in accordance with the contents of the read recipe.
  • the controller 121 is stored in an external storage device 123 (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card).
  • the above-mentioned program can be configured by installing it in a computer.
  • the storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
  • the recording medium may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both.
  • the program may be provided to the computer using a communication means such as the Internet or a dedicated line without using the external storage device 123.
  • Substrate processing step As a step of manufacturing a semiconductor device (device), a substrate on which a metal nitride film is formed is subjected to an oxidation treatment, and then, for example, an F-containing metal source gas is used. An example of the process of forming the metal nitride film will be described with reference to FIGS.
  • the step of oxidizing the metal nitride film and the step of forming the metal film are performed using the processing furnace 202 of the substrate processing apparatus 10 described above. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by the controller 121.
  • O 2 gas is supplied to the wafer 200 in which the TiN film containing Ti is formed on the ONO to oxidize the surface of the TiN film, Forming a Ti oxide layer on the surface of the TiN film; and supplying a WF 6 gas containing W and F to the wafer 200 on which the Ti oxide layer is formed to form a W film containing W on the wafer 200
  • a step of forming a W film by supplying a B 2 H 6 gas and a WF 6 gas to the wafer 200 to form a W nucleus layer containing W on the wafer 200.
  • the film is subjected to a process including a W nucleus layer and a W bulk layer.
  • wafer when the term “wafer” is used, it means “wafer itself” or “a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface thereof”. "(That is, a wafer including a predetermined layer or film formed on the surface).
  • wafer surface when the term “wafer surface” is used in this specification, it means “the surface of the wafer itself (exposed surface)” or “the surface of a predetermined layer or film formed on the wafer”. That is, it may mean “the outermost surface of the wafer as a laminated body”.
  • substrate is also synonymous with the term “wafer”.
  • a plurality of wafers 200 having TiN films as metal nitride films formed (exposed) on the outermost surface are loaded into the processing chamber 201 (boat loading). Specifically, when a plurality of wafers 200 are loaded into the boat 217 (wafer charge), the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 as shown in FIG. And is carried into the processing chamber 201. In this state, the seal cap 219 closes the lower end opening of the reaction tube 203 via the O-ring 220.
  • the inside of the processing chamber 201 is evacuated by a vacuum pump 246 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 keeps operating at least until the processing on the wafer 200 is completed. Further, the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. At this time, the energization amount to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the processing chamber 201 has a desired temperature distribution (temperature adjustment). The heating of the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed.
  • the valve 314 is opened, and an O 2 gas that is an oxidizing gas is caused to flow into the gas supply pipe 310.
  • the flow rate of the O 2 gas is adjusted by the MFC 312, supplied into the processing chamber 201 from the gas supply hole 410 a of the nozzle 410, and exhausted from the exhaust pipe 231.
  • O 2 gas is supplied to the wafer 200 on which the TiN film is formed.
  • the valve 514 is opened, and an inert gas such as N 2 gas is allowed to flow into the gas supply pipe 510.
  • the flow rate of the N 2 gas flowing through the gas supply pipe 510 is adjusted by the MFC 512, supplied into the processing chamber 201 together with the O 2 gas, and exhausted from the exhaust pipe 231.
  • the valves 524 and 534 are opened, and the N 2 gas is allowed to flow into the gas supply pipes 520 and 530.
  • the N 2 gas is supplied into the processing chamber 201 through the gas supply pipes 320a, 320b, 330 and the nozzles 420, 430, and is exhausted from the exhaust pipe 231.
  • the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 1 to 3990 Pa.
  • the supply flow rate of O 2 gas controlled by the MFC 312 is, for example, a flow rate in the range of 0.01 to 10 slm.
  • the supply flow rate of N 2 gas controlled by the MFCs 512, 522, and 532 is set to a flow rate within a range of 0.1 to 50 slm, for example.
  • the time for supplying the O 2 gas to the wafer 200 is, for example, a time within the range of 0.01 to 300 seconds.
  • the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 becomes a temperature within a range of 200 to 700 ° C., for example.
  • the process conditions such as the O 2 gas supply flow rate and time are adjusted so that the TiN film is oxidized by a predetermined film thickness (required film thickness).
  • a predetermined film thickness for example, when the thickness of the TiN film is in the range of 1 to 3 nm, the TiN film having a thickness in the range of 0.2 to 2 nm is oxidized. If the thickness of the oxidized TiN film is less than 0.2 nm, the TiN film at the interface (including the oxidized TiN film) may not be sufficiently sublimated. If it is thicker than 2 nm, the TiN film becomes thin and it may be difficult to serve as a barrier film. In this way, the TiN film is oxidized until the TiN film at the interface to which F has adhered in the next W film forming step has a predetermined film thickness necessary for sublimation from the wafer 200.
  • the valve 314 is closed and the supply of O 2 gas is stopped.
  • a film including an oxidized TiN film is exposed on the outermost surface of the wafer 200. That is, the surface of the wafer 200 is oxidized. That is, it is a metal oxide layer containing Ti and O, and a TiOx layer, a TiON layer, etc. are exposed. Further, the interface of the TiN film may not be completely oxidized, and a certain amount of TiN film may be left (that is, a state in which TiN and a layer containing Ti and O are mixed).
  • a step of forming a W film, which is a metal film, on the wafer 200 where the oxidized TiN film is exposed is executed.
  • a W nucleus layer is first formed by the W nucleus layer forming step described later, and then the W nucleus layer is used as a nucleus.
  • An example of forming the W bulk layer by the W bulk layer forming step will be described.
  • B 2 H 6 gas supply step 21 The valve 324a is opened, and B 2 H 6 gas, which is a B-containing gas, is allowed to flow as a first reducing gas into the gas supply pipe 320a.
  • the flow rate of the B 2 H 6 gas is adjusted by the MFC 322 a, supplied into the processing chamber 201 from the gas supply hole 420 a of the nozzle 420, and exhausted from the exhaust pipe 231.
  • B 2 H 6 gas is supplied to the wafer 200.
  • the valve 524 is opened, and N 2 gas is caused to flow into the gas supply pipe 520.
  • the flow rate of the N 2 gas flowing through the gas supply pipe 520 is adjusted by the MFC 522.
  • N 2 gas is supplied into the processing chamber 201 together with B 2 H 6 gas, and is exhausted from the exhaust pipe 231.
  • the valves 514 and 534 are opened, and N 2 gas is allowed to flow into the gas supply pipes 510 and 530.
  • the N 2 gas is supplied into the processing chamber 201 through the gas supply pipes 310 and 330 and the nozzles 410 and 430 and is exhausted from the exhaust pipe 231.
  • the APC valve 243 When flowing the B 2 H 6 gas, the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 10 to 3990 Pa.
  • the supply flow rate of the B 2 H 6 gas controlled by the MFC 322a is, for example, a flow rate in the range of 0.01 to 20 slm.
  • the supply flow rate of N 2 gas controlled by the MFCs 512, 522, and 532 is set to a flow rate in the range of 0.0.01 to 30 slm, for example.
  • the time for supplying the B 2 H 6 gas to the wafer 200 is, for example, a time within the range of 0.01 to 60 seconds.
  • the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 becomes a temperature within the range of 100 to 350 ° C., for example.
  • the gas flowing into the processing chamber 201 is only B 2 H 6 gas and N 2 gas, and the outermost surface of the wafer 200 is reduced by supplying the B 2 H 6 gas.
  • the valve 324a is closed to stop the supply of the B 2 H 6 gas.
  • the APC valve 243 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and B 2 H 6 gas remaining in the processing chamber 201 and contributing to unreacted or reduced gas Are removed from the processing chamber 201.
  • the valves 514, 524, and 534 remain open, and the supply of N 2 gas into the processing chamber 201 is maintained.
  • the N 2 gas acts as a purge gas, and can enhance the effect of removing the unreacted B 2 H 6 gas remaining in the processing chamber 201 or contributing to the reduction from the processing chamber 201.
  • the valve 334 is opened, and the WF 6 gas which is a raw material gas is caused to flow in the gas supply pipe 330.
  • the flow rate of the WF 6 gas is adjusted by the MFC 332, supplied from the gas supply hole 430 a of the nozzle 430 into the processing chamber 201, and exhausted from the exhaust pipe 231.
  • WF 6 gas is supplied to the wafer 200.
  • the valve 534 is opened, and an inert gas such as N 2 gas is allowed to flow into the gas supply pipe 530.
  • the flow rate of the N 2 gas flowing through the gas supply pipe 530 is adjusted by the MFC 532, supplied into the processing chamber 201 together with the WF 6 gas, and exhausted from the exhaust pipe 231.
  • the valves 514 and 524 are opened, and N 2 gas is allowed to flow into the gas supply pipes 510 and 520.
  • the N 2 gas is supplied into the processing chamber 201 through the gas supply pipes 310, 320 a, 320 b and the nozzles 410, 420 and is exhausted from the exhaust pipe 231.
  • the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 0.1 to 6650 Pa.
  • the supply flow rate of the WF 6 gas controlled by the MFC 332 is, for example, a flow rate in the range of 0.01 to 10 slm.
  • the supply flow rate of N 2 gas controlled by the MFCs 512, 522, and 532 is set to a flow rate in the range of 0.1 to 30 slm, for example.
  • the time for supplying the WF 6 gas to the wafer 200 is, for example, a time within the range of 0.01 to 600 seconds.
  • the temperature of the heater 207 is set to a temperature at which the temperature of the wafer 200 becomes the same as that in step 21, for example.
  • the gases flowing into the processing chamber 201 are only WF 6 gas and N 2 gas.
  • a W-containing layer having a thickness of, for example, less than one atomic layer to several atomic layers is formed on the wafer 200, and the oxidized TiN film existing on the wafer 200 and the WF 6 F contained in the gas is combined to form a TiOFx layer, a TiONx layer, a TiNFx layer, or the like.
  • the formed TiOFx layer, TiONFx layer, TiNFx layer and the like are sublimated (etched) from the wafer 200.
  • the rate at which the TiOFx layer, the TiONx layer, the TiNFx layer, etc. are formed becomes smaller than the first cycle.
  • a cycle of performing the above steps 21 to 27 in order is performed one or more times (a predetermined number of times (n times)), whereby a predetermined thickness (for example, 0.1 to 4.0 nm) is formed on the wafer 200.
  • the above-described cycle is preferably repeated a plurality of times, so that the W 2 H 6 gas and the WF 6 gas should not be mixed with each other (time-division). And) alternately supplied to the wafer 200.
  • the valves 324b and 330 are opened, and H 2 gas and WF 6 gas are allowed to flow into the gas supply pipes 320b and 330, respectively.
  • the flow rate of the H 2 gas flowing in the gas supply pipe 320b and the WF 6 gas flowing in the gas supply pipe 330 are adjusted by the MFCs 322b and 330, respectively, and the processing chamber 201 is supplied from the gas supply holes 420a and 430a of the nozzles 420 and 430, respectively. Is exhausted from the exhaust pipe 231.
  • H 2 gas and WF 6 gas are supplied to the wafer 200. That is, the surface of the wafer 200 is exposed to H 2 gas and WF 6 gas.
  • the valves 514 and 524 are opened, and N 2 gas is caused to flow into the carrier gas supply pipes 510 and 520, respectively.
  • the N 2 gas flowing through the carrier gas supply pipes 510 and 520 is adjusted in flow rate by the MFCs 512 and 522, supplied to the processing chamber 201 together with the H 2 gas or WF 6 gas, and exhausted from the exhaust pipe 231.
  • the valve 514 is opened and N 2 gas is allowed to flow into the carrier gas supply pipe 510.
  • the N 2 gas is supplied into the processing chamber 201 through the gas supply pipe 310 and the nozzle 410 and is exhausted from the exhaust pipe 231.
  • the APC valve 243 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 10 to 3990 Pa.
  • the supply flow rate of H 2 gas controlled by the MFC 322b is set to a flow rate in the range of 100 to 20000 sccm, for example, and the supply flow rate of WF 6 gas controlled by the MFC 330 is set to a flow rate in the range of 10 to 1000 sccm, for example.
  • the supply flow rate of N 2 gas controlled by the MFCs 512, 522, and 532 is set to a flow rate within a range of 10 to 10,000 sccm, for example.
  • the time for supplying the H 2 gas and WF 6 gas to the wafer 200 is, for example, a time within the range of 1 to 1000 seconds.
  • the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 becomes a temperature within the range of 100 to 600 ° C., for example.
  • the gases flowing into the processing chamber 201 are only H 2 gas and WF 6 gas, and a thickness of, for example, 10 to 30 nm is formed on the W nucleus layer formed on the wafer 200 by the supply of the WF 6 gas.
  • the W bulk layer is formed.
  • F contained in the WF 6 gas may reach the TiN / W interface, and a TiOFx layer, a TiONFx layer, a TiNFx layer, or the like may be formed.
  • a W film is composed of the W nucleus layer and the W bulk layer.
  • the W bulk layer is formed by mixing H 2 gas and WF 6 gas and supplying them to the wafer 200.
  • the TiN film may be etched by F contained in the WF 6 gas.
  • the formed TiOFx layer, TiONFx layer, TiNFx layer, and the like may be sublimated (etched) from the wafer 200 simultaneously with the formation, thereby suppressing F from adhering to the TiN / W interface. .
  • the valves 324b and 330 are closed, and the supply of the H 2 gas and the WF 6 gas is stopped.
  • the APC valve 243 of the exhaust pipe 231 remains open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and WF 6 after contributing to the formation of unreacted or bulk W layer remaining in the processing chamber 201
  • the gas is removed from the processing chamber 201.
  • the valves 514, 524, and 534 remain open, and the supply of N 2 gas into the processing chamber 201 is maintained.
  • the N 2 gas acts as a purge gas, and it is possible to enhance the effect of removing the unreacted WF 6 gas remaining in the processing chamber 201 or after contributing to the formation of the bulk W layer from the processing chamber 201.
  • N 2 gas is supplied into the processing chamber 201 from each of the gas supply pipes 510, 520, and 530 and exhausted from the exhaust pipe 231.
  • the N 2 gas acts as a purge gas, whereby the inside of the processing chamber 201 is purged with an inert gas, and the gas and by-products remaining in the processing chamber 201 are removed from the inside of the processing chamber 201 (after purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).
  • the TiN film was oxidized, the W nucleus layer was formed, and the bulk W layer was formed by the same processes as those described in the above embodiment.
  • a W nucleus layer was formed on a TiN film that was not subjected to an oxidation step and a bulk W layer was formed on the W nucleus layer by a film formation flow according to the comparative form shown in FIG. 4B.
  • the thickness of the TiN film formed on the substrate before the oxidation step or the formation of the W nucleus layer is 3 nm.
  • FIG. 6 shows the thickness of the TiN film remaining after performing the embodiment of the present invention or the comparative embodiment, from the thickness of the TiN film formed on the substrate before the oxidation process or the formation of the W nucleus layer. It is a graph which shows the amount of abrasion of the TiN film
  • TiN was cut by about 3.3 mm, whereas in the example, TiN was cut by about 6.4 mm, and in the example, TiN was cut by about twice (sublimed). )
  • FIG. 7 shows the relationship between the amount of F remaining at the TiN / W interface and the amount of TiN shaving after the W film is formed according to the embodiment. From FIG. 7, it can be seen that the F residual amount gradually decreases as the scraping amount increases. Thus, it can be seen that by oxidizing the TiN film using the present invention and then forming the W film, the amount of scraping of the TiN film can be increased and the F residual amount can be decreased (reduced). .
  • the example in which the O 2 gas is continuously supplied in the oxidation process (that is, an example in which the oxidation process is performed in one cycle) has been described.
  • the present invention is not limited to this.
  • the oxidation step and the subsequent residual gas removal step may be alternately repeated a plurality of times.
  • the step of supplying H 2 gas and WF 6 gas and the subsequent residual gas removal step may be alternately repeated a plurality of times. That is, the H 2 gas and the WF 6 gas may be alternately supplied to the wafer 200 so as not to be mixed with each other (time-division).
  • the metal nucleus layer (W nucleus layer) and the metal bulk layer (W bulk layer) are stacked.
  • the example in which the oxide can be sublimated from the wafer 200 has been described. The present invention is not limited to this.
  • a metal film F contained in a fluorine-containing metal source gas (WF 6 gas) is combined with a metal oxide layer to form a metal fluoride oxide.
  • supplying the reducing gas in each step is the same as in the above-described embodiment.
  • the present invention is not limited to this.
  • a tantalum nitride film TaN film
  • molybdenum nitride film MoN film
  • ZnN films zinc nitride films
  • AlN films aluminum nitride films
  • an example has been described using an O 2 gas as an oxidizing gas is not limited thereto, for example, ozone (O 3), plasma excited oxygen (O 2), water vapor (H 2 O), Hydrogen peroxide (H 2 O 2 ), nitrous oxide (N 2 O), plasma-excited mixed gas of O 2 + H 2 , or the like can also be used.
  • H 2 and O 2 may be supplied separately, or H 2 and O 2 are activated to generate hydrogen radicals and oxygen radicals, atomic hydrogen and atoms. It may be used as gaseous oxygen, or H 2 O may be generated in the processing chamber 201.
  • magnetron discharge plasma capacitively coupled plasma (CCP), inductively coupled plasma (ICP), surface wave plasma (SWP), microwave plasma, or the like. is there. Either isotropic plasma or anisotropic plasma is applicable.
  • a W film is formed using WF 6 as a metal film
  • the present invention is not limited thereto, and a Ti film formed using titanium tetrafluoride (TiF 4 ) Ta film formed using tantalum fluoride (TaF 5 ), Co film formed using cobalt difluoride (CoF 2 ), Y film formed using yttrium trifluoride (YF 3 ), trifluoride Ru film formed using ruthenium (RuF 3 ), Al film formed using aluminum trifluoride (AlF 3 ), Mo film formed using molybdenum pentafluoride (MoF 5 ), Niobium trifluoride ( The present invention is applicable to Nb films formed using NbF 3 ), Mn films formed using manganese difluoride (MnF 2 ), Ni films formed using nickel difluoride (NiF 2 ), and the like.
  • B 2 H 6 as a B-containing gas as the first reducing gas
  • triborane (B 3 H 8) in place of B 2 H 6 using a gas or the like
  • phosphine (PH 3 ) which is a phosphorus (P) -containing gas, or monosilane (SiH 4 ) gas or disilane (Si 2 ) as a silicon (Si) -containing gas (silane-based gas).
  • PH 3 phosphine
  • P phosphorus
  • SiH 4 monosilane
  • Si 2 silicon
  • H 6 silicon
  • deuterium has been described an example of using H 2 gas as H-containing gas as the second reducing gas, instead of H 2 gas, H-containing gas other elements free ( It is also possible to use D 2 ) gas or the like.
  • the substrate processing apparatus is a batch type vertical apparatus that processes a plurality of substrates at a time, and a nozzle for supplying a processing gas is erected in one reaction tube, and the reaction tube
  • the processing gas may be supplied from a gas supply port that opens in a side wall of the inner tube, instead of being supplied from a nozzle standing in the inner tube.
  • the exhaust port opened to the outer tube may be opened according to the height at which there are a plurality of substrates stacked and accommodated in the processing chamber.
  • the shape of the exhaust port may be a hole shape or a slit shape.
  • film formation can be performed with the same sequence and processing conditions as in the above-described embodiment.
  • the process recipes are the contents of the substrate processing (film type, composition ratio, film quality, film thickness, processing procedure, processing of the thin film to be formed) It is preferable to prepare individually (multiple preparations) according to the conditions. And when starting a substrate processing, it is preferable to select a suitable process recipe suitably from several process recipes according to the content of a substrate processing.
  • the substrate processing apparatus includes a plurality of process recipes individually prepared according to the contents of the substrate processing via an electric communication line or a recording medium (external storage device 123) on which the process recipe is recorded. It is preferable to store (install) in the storage device 121c in advance.
  • the CPU 121a included in the substrate processing apparatus When starting the substrate processing, the CPU 121a included in the substrate processing apparatus appropriately selects an appropriate process recipe from a plurality of process recipes stored in the storage device 121c according to the content of the substrate processing. Is preferred. With this configuration, thin films with various film types, composition ratios, film qualities, and film thicknesses can be formed for general use with good reproducibility using a single substrate processing apparatus. In addition, it is possible to reduce the operation burden on the operator (such as an input burden on the processing procedure and processing conditions), and to quickly start the substrate processing while avoiding an operation error.
  • the present invention can be realized by changing a process recipe of an existing substrate processing apparatus, for example.
  • the process recipe according to the present invention is installed in an existing substrate processing apparatus via a telecommunication line or a recording medium recording the process recipe, or input / output of the existing substrate processing apparatus It is also possible to operate the apparatus and change the process recipe itself to the process recipe according to the present invention.
  • controller 200 wafer (substrate) 201 processing chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne une technologie destinée à inhiber la diffusion de fluor dans un film isolant, lorsqu'un gaz de matériau de départ métallique contenant du fluor est utilisé pour former un film métallique sur un substrat comportant sur sa surface ledit film isolant et un film barrière formé sur le film isolant. Un procédé selon l'invention comprend : une étape dans laquelle un gaz oxydant est acheminé vers un substrat dans lequel un film de nitrure métallique comprenant un premier élément métallique est formé sur un film isolant, pour oxyder la surface du film de nitrure métallique et former une couche d'oxyde métallique ; et une étape dans laquelle un gaz de matériau de départ métallique contenant du fluor comprenant un deuxième élément métallique et du fluor est acheminé vers le substrat pour former un film métallique sur ledit substrat. L'étape dans laquelle le film métallique est formé comprend : une étape dans laquelle un premier gaz réducteur et le gaz de matériau de départ métallique contenant du fluor sont acheminés vers le substrat pour former, sur ledit substrat, une couche de noyau métallique comprenant le deuxième élément métallique ; et une étape dans laquelle un deuxième gaz réducteur et le gaz de matériau de départ métallique contenant du fluor sont utilisés sur le substrat pour former une couche massive métallique sur la couche de noyau métallique.
PCT/JP2016/078629 2016-09-28 2016-09-28 Procédé pour production de dispositif semi-conducteur WO2018061109A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2016/078629 WO2018061109A1 (fr) 2016-09-28 2016-09-28 Procédé pour production de dispositif semi-conducteur
JP2018541775A JP6639691B2 (ja) 2016-09-28 2016-09-28 半導体装置の製造方法、プログラムおよび基板処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2016/078629 WO2018061109A1 (fr) 2016-09-28 2016-09-28 Procédé pour production de dispositif semi-conducteur

Publications (1)

Publication Number Publication Date
WO2018061109A1 true WO2018061109A1 (fr) 2018-04-05

Family

ID=61759317

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/078629 WO2018061109A1 (fr) 2016-09-28 2016-09-28 Procédé pour production de dispositif semi-conducteur

Country Status (2)

Country Link
JP (1) JP6639691B2 (fr)
WO (1) WO2018061109A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022130559A1 (fr) * 2020-12-17 2022-06-23 株式会社Kokusai Electric Procédé de production de dispositif à semi-conducteurs, programme et dispositif de traitement de substrat

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002030436A (ja) * 2000-03-29 2002-01-31 Applied Materials Inc タングステンｃｖｄにおけるフッ素汚染の減少
JP2004536960A (ja) * 2001-03-28 2004-12-09 アプライド　マテリアルズ　インコーポレイテッド フッ素を含まないタングステン核生成によるｗ−ｃｖｄ
JP2014019912A (ja) * 2012-07-19 2014-02-03 Tokyo Electron Ltd タングステン膜の成膜方法
JP2016128606A (ja) * 2015-12-24 2016-07-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002030436A (ja) * 2000-03-29 2002-01-31 Applied Materials Inc タングステンｃｖｄにおけるフッ素汚染の減少
JP2004536960A (ja) * 2001-03-28 2004-12-09 アプライド　マテリアルズ　インコーポレイテッド フッ素を含まないタングステン核生成によるｗ−ｃｖｄ
JP2014019912A (ja) * 2012-07-19 2014-02-03 Tokyo Electron Ltd タングステン膜の成膜方法
JP2016128606A (ja) * 2015-12-24 2016-07-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022130559A1 (fr) * 2020-12-17 2022-06-23 株式会社Kokusai Electric Procédé de production de dispositif à semi-conducteurs, programme et dispositif de traitement de substrat

Also Published As

Publication number Publication date
JP6639691B2 (ja) 2020-02-05
JPWO2018061109A1 (ja) 2019-02-07

Similar Documents

Publication Publication Date Title
JP6980106B2 (ja) 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法
KR20170095749A (ko) 기판 처리 장치, 반도체 장치의 제조 방법, 프로그램 및 원료 가스 노즐
JP6647260B2 (ja) 半導体装置の製造方法、基板処理装置及びプログラム
US9970107B2 (en) Method of manufacturing semiconductor device
US11621169B2 (en) Method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
JP7157236B2 (ja) 基板処理方法、半導体装置の製造方法、プログラム及び基板処理装置
KR102331046B1 (ko) 반도체 장치의 제조 방법, 기록 매체 및 기판 처리 장치
US20240055259A1 (en) Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
CN113227450A (zh) 半导体器件的制造方法、衬底处理装置及程序
JP6639691B2 (ja) 半導体装置の製造方法、プログラムおよび基板処理装置
US9916976B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
WO2018179354A1 (fr) Procédé de fabrication de dispositif à semiconducteur, dispositif de traitement de substrat, et programme
US20200411330A1 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
JP7372336B2 (ja) 基板処理方法、プログラム、基板処理装置及び半導体装置の製造方法
WO2022064549A1 (fr) Procédé de fabrication de dispositif à semi-conducteur, support d'enregistrement et dispositif de traitement de substrat
JP6030746B2 (ja) 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体
JP7110468B2 (ja) 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法。
US20220165565A1 (en) Method of processing substrate, recording medium, and substrate processing apparatus
TWI789622B (zh) 半導體裝置的製造方法，程式及基板處理裝置
JP7179962B2 (ja) 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
WO2018061144A1 (fr) Procédé de production de dispositif à semi-conducteur
CN117716062A (zh) 半导体装置的制造方法、基板处理装置、程序以及涂布方法
CN115706001A (zh) 衬底处理方法、衬底处理装置、记录介质及半导体器件的制造方法
JPWO2020175427A1 (ja) 半導体装置の製造方法、基板処理装置およびプログラム

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2018541775

Country of ref document: JP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16917662

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16917662

Country of ref document: EP

Kind code of ref document: A1