WO2018061144A1 - Procédé de production de dispositif à semi-conducteur - Google Patents

Procédé de production de dispositif à semi-conducteur Download PDF

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Publication number
WO2018061144A1
WO2018061144A1 PCT/JP2016/078819 JP2016078819W WO2018061144A1 WO 2018061144 A1 WO2018061144 A1 WO 2018061144A1 JP 2016078819 W JP2016078819 W JP 2016078819W WO 2018061144 A1 WO2018061144 A1 WO 2018061144A1
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WIPO (PCT)
Prior art keywords
gas
film
metal
substrate
processing chamber
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PCT/JP2016/078819
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English (en)
Japanese (ja)
Inventor
小川　有人
篤郎 清野
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株式会社日立国際電気
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Application filed by 株式会社日立国際電気 filed Critical 株式会社日立国際電気
Priority to JP2018541806A priority Critical patent/JP6652652B2/ja
Priority to PCT/JP2016/078819 priority patent/WO2018061144A1/fr
Publication of WO2018061144A1 publication Critical patent/WO2018061144A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device.
  • a process of manufacturing a semiconductor device there is a case where a substrate process, for example, a film forming process is performed by supplying a processing gas to a substrate in a processing chamber.
  • LSI Large-Scale Integration
  • LSI Large-Scale Integration
  • a metal film in a portion where the opening is narrower than before.
  • a tungsten (W) -containing film is often used for the metal film, but since the adhesion between the Si-based insulating film and the W-containing film is low.
  • a barrier metal such as a tantalum nitride film (TaN film) or a titanium nitride film (TiN film) is inserted at the interface between the Si-based insulating film and the W-containing film.
  • the TaN film and the TiN film have problems such as high resistivity and easy oxidation.
  • An object of the present invention is to improve the adhesion between an insulating film and a W-containing film that is a metal film and maintain a low wiring resistance when a metal film is formed on the insulating film in a wiring process.
  • a first reducing gas composed of a borane-based gas or a silane-based gas is supplied to a substrate having an insulating film formed on the surface to reduce the insulating film.
  • the W-containing film Before forming the W-containing film, it is possible to improve the adhesion between the insulating film and the W-containing film by reducing the insulating film by irradiating the substrate on which the insulating film is formed with a reducing gas. Become. Furthermore, since a W-containing film that is a metal film is formed without using a barrier metal film such as a TaN film or a TiN film having a high resistivity, it is possible to maintain a low wiring resistance.
  • a barrier metal film such as a TaN film or a TiN film having a high resistivity
  • FIG. 1 is a diagram illustrating an example of a suitable flow for creating a sample.
  • FIG. 2 is a schematic cross-sectional view of the sample prepared in the flow of FIG. 1, wherein (a) shows the application of photoresist (PR) on the SiO film, (b) exposure / development, and (c) the region where W is embedded.
  • PR photoresist
  • the resist is masked with a resist, the W buried portion is opened by etching, (d) the resist is removed and washed, (e) the SiO film is reduced to form a barrier metal / wiring film, and (f) the W is removed by CMP. It is a schematic sectional drawing in each process performed in order.
  • FIG. 1 is a diagram illustrating an example of a suitable flow for creating a sample.
  • FIG. 2 is a schematic cross-sectional view of the sample prepared in the flow of FIG. 1, wherein (a) shows the application of photoresist (PR) on the SiO film, (b) exposure
  • FIG. 3 is a schematic configuration diagram of a processing furnace of a substrate processing apparatus preferably used in the embodiment of the present invention, and is a view showing a processing furnace part in a longitudinal sectional view.
  • 4 is a schematic cross-sectional view taken along line AA in FIG.
  • FIG. 5 is a block diagram showing a configuration of a controller included in the substrate processing apparatus shown in FIG.
  • FIG. 6 is a diagram showing a suitable gas supply timing in the film forming process of the embodiment of the present invention.
  • a SiO film is formed as an interlayer insulating film on the substrate, and in order to form a W film as a wiring in the SiO film, a photoresist (PR) is applied on the SiO film, and exposure and development are performed. The regions other than the region where W is buried are masked with a resist, and the W buried portion is opened by etching. Thereafter, a barrier metal / wiring film forming process is performed through resist removal and cleaning.
  • PR photoresist
  • a tungsten nitride film (WN film) is formed as the barrier metal and a W film is formed as the wiring film.
  • a barrier metal such as a tantalum nitride film (TaN film) or a titanium nitride film (TiN film) is used as the Si-based insulating film and the W-containing film. In some cases, it was inserted into the interface.
  • the inventors have intensively studied, and as a cause of low adhesion between the Si-based insulating film and the W-containing film, organic substances or the like are attached on the Si-based insulating film, which is an interlayer insulating film. It has been found that the adhesiveness of the film is lowered because the containing film is formed. Therefore, as shown in FIGS. 1 and 2, in a series of processes for forming a W film as a wiring in the above-described SiO film, before forming the W-containing film, the substrate on which the Si-based insulating film is formed is formed. On the other hand, a reducing gas such as borane gas or silane gas was irradiated.
  • a reducing gas such as borane gas or silane gas was irradiated.
  • FIG. 2E is a view showing a cross section of the produced sample.
  • the substrate on which the Si-based insulating film is formed is attached to the surface of the Si-based insulating film by irradiating a reducing gas such as borane-based gas or silane-based gas. It has been devised that the adhesion between the Si-based insulating film and the W-containing film is improved by removing the organic matter and the like, and attaching boron (B) or silicon (Si). Details will be described below.
  • a reducing gas such as borane-based gas or silane-based gas.
  • the substrate processing apparatus 10 is configured as an example of an apparatus used in a semiconductor device manufacturing process.
  • the substrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating means (heating mechanism, heating system).
  • the heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.
  • an outer tube 203 constituting a reaction vessel (processing vessel) concentrically with the heater 207 is disposed inside the heater 207.
  • the outer tube 203 is made of a heat-resistant material such as quartz (SiO) or silicon carbide (SiC), and has a cylindrical shape with the upper end closed and the lower end opened.
  • a manifold (inlet flange) 209 is disposed below the outer tube 203 concentrically with the outer tube 203.
  • the manifold 209 is made of a metal such as stainless steel (SUS), for example, and is formed in a cylindrical shape with an upper end and a lower end opened.
  • An O-ring 220a as a seal member is provided between the upper end portion of the manifold 209 and the outer tube 203. As the manifold 209 is supported by the heater base, the outer tube 203 is installed vertically.
  • an inner tube 204 constituting a reaction vessel is disposed inside the outer tube 203.
  • the inner tube 204 is made of a heat resistant material such as quartz (SiO) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened.
  • a processing vessel (reaction vessel) is mainly constituted by the outer tube 203, the inner tube 204, and the manifold 209.
  • a processing chamber 201 is formed in a cylindrical hollow portion of the processing container (inside the inner tube 204).
  • the processing chamber 201 is configured to be able to accommodate wafers 200 as substrates in a state where they are arranged in multiple stages in a vertical posture in a horizontal posture by a boat 217 described later.
  • nozzles 410, 420, and 430 are provided so as to penetrate the side wall of the manifold 209 and the inner tube 204.
  • Gas supply pipes 310 and 330 as gas supply lines are connected to the nozzles 410 and 430, respectively.
  • the nozzle 420 is connected to gas supply pipes 320a and 320b as gas supply lines.
  • the substrate processing apparatus 10 is provided with the three nozzles 410, 420, and 430 and the four gas supply pipes 310, 320 a, 320 b, and 330, and a plurality of types of gases into the processing chamber 201. It is comprised so that it can supply.
  • the processing furnace 202 of this embodiment is not limited to the above-mentioned form.
  • the gas supply pipes 310, 320a, 320b, and 330 are provided with mass flow controllers (MFCs) 312, 322a, 320b, and 332, respectively, which are flow controllers (flow controllers) from the upstream side.
  • MFCs mass flow controllers
  • the gas supply pipes 310, 320, and 330 are provided with valves 314, 324a, 320b, and 334, which are on-off valves, respectively.
  • Gas supply pipes 510, 520, and 530 for supplying an inert gas are connected to the downstream sides of the valves 314, 324a, 320b, and 334 of the gas supply pipes 310, 320a, 320b, and 330, respectively.
  • the gas supply pipes 510, 520, and 530 are provided with MFCs 512, 522, and 532 that are flow rate controllers (flow rate control units) and valves 514, 524, and 534 that are on-off valves in order from the upstream side.
  • MFCs 512, 522, and 532 that are flow rate controllers (flow rate control units) and valves 514, 524, and 534 that are on-off valves in order from the upstream side.
  • Nozzles 410 and 430 are connected to the distal ends of the gas supply pipes 310 and 330, respectively.
  • the nozzle 420 is connected after the gas supply pipe 320a and the gas supply pipe 320b are connected.
  • the nozzles 410, 420, and 430 are configured as L-shaped nozzles, and the horizontal portion thereof is provided so as to penetrate the side wall of the manifold 209 and the inner tube 204.
  • the vertical portions of the nozzles 410, 420, and 430 are provided inside a channel-shaped (groove-shaped) preliminary chamber 201 a that protrudes radially outward of the inner tube 204 and extends in the vertical direction. In the preliminary chamber 201a, it is provided along the inner wall of the inner tube 204 upward (upward in the arrangement direction of the wafers 200).
  • the nozzles 410, 420, and 430 are provided so as to extend from the lower region of the processing chamber 201 to the upper region of the processing chamber 201, and a plurality of gas supply holes 410 a, 420 a, 430 a are respectively provided at positions facing the wafer 200. Is provided. Accordingly, the processing gas is supplied to the wafer 200 from the gas supply holes 410a, 420a, and 430a of the nozzles 410, 420, and 430, respectively.
  • a plurality of the gas supply holes 410a, 420a, 430a are provided from the lower part to the upper part of the inner tube 204, have the same opening area, and are provided at the same opening pitch.
  • the gas supply holes 410a, 420a, and 430a are not limited to the above-described form.
  • the opening area may be gradually increased from the lower part of the inner tube 204 toward the upper part. Thereby, the flow rate of the gas supplied from the gas supply holes 410a, 420a, 430a can be made more uniform.
  • a plurality of gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430 are provided at a height position from the lower part to the upper part of the boat 217 described later. Therefore, the processing gas supplied into the processing chamber 201 from the gas supply holes 410 a, 420 a, 430 a of the nozzles 410, 420, 430 is accommodated in the wafer 200 accommodated from the lower part to the upper part of the boat 217, that is, the boat 217. Supplied to the entire area of the wafer 200.
  • the nozzles 410, 420, and 430 may be provided so as to extend from the lower region to the upper region of the processing chamber 201, but are preferably provided so as to extend to the vicinity of the ceiling of the boat 217.
  • a first reducing gas is supplied as a processing gas into the processing chamber 201 through the MFC 312, the valve 314, and the nozzle 410.
  • a borane-based gas that is a B-containing gas containing boron (B) or a silane-based gas that is a silicon-containing gas containing silicon (Si) is used.
  • diborane (B 2 H 6 ) is used as the borane-based gas will be described.
  • a reactive gas is supplied as a processing gas into the processing chamber 201 through the MFC 322a, the valve 324a, and the nozzle 420.
  • the reaction gas for example, ammonia (NH 3 ), which is an N-containing gas containing nitrogen (N), is used as a nitriding gas.
  • a second reducing gas different from the first reducing gas is supplied from the gas supply pipe 320b into the processing chamber 201 through the MFC 322b, the valve 324b, and the nozzle 420 as the processing gas.
  • the second reducing gas for example, hydrogen (H 2 ) that is an H-containing gas containing hydrogen atoms (H) is used.
  • a fluorine-containing metal source gas containing metal element and fluorine (F) (also referred to as a metal-containing fluoride gas) as a process gas passes through the MFC 332, the valve 334, and the nozzle 430 to enter the process chamber 201.
  • F fluorine-containing metal source gas containing metal element and fluorine
  • tungsten hexafluoride (WF 6 ) containing tungsten (W) as a metal element is used as tungsten (W) as a metal element.
  • nitrogen (N 2 ) gas as an inert gas passes through the MFCs 512, 522, 532, valves 514, 524, 534, and nozzles 410, 420, 430, respectively. 201 is supplied.
  • N 2 gas used as the inert gas
  • the inert gas for example, argon (Ar) gas, helium (He) gas, neon (Ne) gas other than N 2 gas.
  • a rare gas such as xenon (Xe) gas may be used.
  • a processing gas supply system is mainly configured by the gas supply pipes 310, 320a, 320b, 330, the MFCs 312, 322a, 322b, 332, the valves 314, 324a, 324b, 334, and the nozzles 410, 420, 430. , 420, 430 may be considered as the processing gas supply system.
  • the processing gas supply system may be simply referred to as a gas supply system.
  • the first reducing gas supply system is mainly configured by the gas supply pipe 310, the MFC 312, and the valve 314, but the nozzle 410 is connected to the first reducing gas supply system. It may be included.
  • the first reducing gas supply system When a borane-based gas is used as the first reducing gas, the first reducing gas supply system may be referred to as a borane-based gas.
  • the first reducing gas supply The system may be referred to as a silane gas supply system.
  • the reaction gas When the reaction gas is allowed to flow from the gas supply pipe 320a, the reaction gas supply system is mainly configured by the gas supply pipe 320a, the MFC 322a, and the valve 324a. However, the nozzle 320 may be included in the reaction gas supply system.
  • the reactive gas supply system when a nitriding gas is allowed to flow as a reactive gas, the reactive gas supply system may be referred to as a nitriding gas supply system.
  • the second reducing gas supply pipe 320b When the second reducing gas is allowed to flow from the gas supply pipe 320b, the gas supply pipe 320b, the MFC 322b, and the valve 324b mainly constitute the second reducing gas supply system, but the nozzle 320 is connected to the second reducing gas supply system. It may be included. Further, when the H-containing gas is allowed to flow as the second reducing gas, the second reducing gas supply system may be referred to as an H-containing gas supply system.
  • the source gas is allowed to flow from the gas supply pipe 330, the source gas supply system is mainly configured by the gas supply pipe 330, the MFC 332, and the valve 334, but the nozzle 430 may be included in the source gas supply system.
  • the source gas supply system can also be referred to as a metal-containing source gas supply system.
  • an inert gas supply system is mainly configured by the gas supply pipes 510, 520, and 530, the MFCs 512, 522, and 532, and the valves 514, 524, and 534.
  • the inert gas supply system can also be referred to as a purge gas supply system, a dilution gas supply system, or a carrier gas supply system.
  • the gas supply method is performed in an annular vertically long space defined by the inner wall of the inner tube 204 and the ends of the plurality of wafers 200, that is, in the spare chamber 201a in a cylindrical space.
  • Gas is conveyed through nozzles 410, 420, and 430 arranged in the above. Then, gas is jetted into the inner tube 204 from a plurality of gas supply holes 410a, 420a, 430a provided at positions facing the wafers of the nozzles 410, 420, 430.
  • a source gas or the like is ejected in a direction parallel to the surface of the wafer 200, that is, in a horizontal direction, by the gas supply hole 410a of the nozzle 410, the gas supply hole 420a of the nozzle 420, and the gas supply hole 430a of the nozzle 430. ing.
  • the exhaust hole (exhaust port) 204a is a through-hole formed in a side wall of the inner tube 204 and facing the nozzles 410, 420, 430, that is, a position 180 degrees opposite to the spare chamber 201a. It is a slit-like through-hole that is elongated in the vertical direction. Therefore, the gas that has been supplied into the processing chamber 201 from the gas supply holes 410a, 420a, and 430a of the nozzles 410, 420, and 430a and has flowed on the surface of the wafer 200, that is, the residual gas (residual gas) is exhausted through the exhaust holes 204a.
  • the exhaust hole 204a is provided at a position facing the plurality of wafers 200 (preferably a position facing from the upper part to the lower part of the boat 217), and from the gas supply holes 410a, 420a, 430a to the wafer 200 in the processing chamber 201.
  • the gas supplied in the vicinity flows in the horizontal direction, that is, in the direction parallel to the surface of the wafer 200, and then flows into the exhaust path 206 through the exhaust holes 204 a. That is, the gas remaining in the processing chamber 201 is exhausted in parallel to the main surface of the wafer 200 through the exhaust hole 204a.
  • the exhaust hole 204a is not limited to being configured as a slit-like through hole, and may be configured by a plurality of holes.
  • the manifold 209 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201.
  • a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201
  • an APC (Auto Pressure Controller) valve 243 a vacuum pump as a vacuum exhaust device 246 is connected.
  • the APC valve 243 can open and close the vacuum pump 246 while the vacuum pump 246 is operated, and can stop the vacuum exhaust and stop the vacuum exhaust in the processing chamber 201. Further, the APC valve 243 can be operated while the vacuum pump 246 is operated. By adjusting the opening, the pressure in the processing chamber 201 can be adjusted.
  • An exhaust system that is, an exhaust line, is mainly configured by the exhaust hole 204a, the exhaust path 206, the exhaust pipe 231, the APC valve 243, and the pressure sensor 245. Note that the vacuum pump 246 may be included in the exhaust system.
  • a seal cap 219 is provided as a furnace opening lid capable of airtightly closing the lower end opening of the manifold 209.
  • the seal cap 219 is configured to contact the lower end of the manifold 209 from the lower side in the vertical direction.
  • the seal cap 219 is made of a metal such as SUS and is formed in a disk shape.
  • an O-ring 220b is provided as a seal member that comes into contact with the lower end of the manifold 209.
  • a rotation mechanism 267 that rotates the boat 217 that accommodates the wafers 200 is installed on the seal cap 219 on the opposite side of the processing chamber 201.
  • a rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217.
  • the rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217.
  • the seal cap 219 is configured to be lifted and lowered in the vertical direction by a boat elevator 115 as a lifting mechanism vertically installed outside the outer tube 203.
  • the boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by moving the seal cap 219 up and down.
  • the boat elevator 115 is configured as a transfer device (transfer mechanism) that transfers the boat 217 and the wafer 200 accommodated in the boat 217 into and out of the processing chamber 201.
  • the boat 217 as the substrate support is configured to support a plurality of, for example, 25 to 200 wafers 200 in a horizontal posture and in a multi-stage by aligning them in the vertical direction with their centers aligned. It is configured to arrange at intervals.
  • the boat 217 is made of a heat-resistant material such as quartz or SiC.
  • a heat insulating plate 218 made of a heat resistant material such as quartz or SiC is supported in multiple stages (not shown) in a horizontal posture. With this configuration, heat from the heater 207 is not easily transmitted to the seal cap 219 side.
  • this embodiment is not limited to the above-mentioned form.
  • a heat insulating cylinder configured as a cylindrical member made of a heat resistant material such as quartz or SiC may be provided.
  • a temperature sensor 263 as a temperature detector is installed in the inner tube 204, and by adjusting the energization amount to the heater 207 based on the temperature information detected by the temperature sensor 263,
  • the temperature inside the processing chamber 201 is configured to have a desired temperature distribution.
  • the temperature sensor 263 is configured in an L shape similarly to the nozzles 410, 420, and 430, and is provided along the inner wall of the inner tube 204.
  • the controller 121 which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.
  • the RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via an internal bus.
  • an input / output device 122 configured as a touch panel or the like is connected to the controller 121.
  • the storage device 121c includes, for example, a flash memory, a HDD (Hard Disk Drive), and the like.
  • a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of a semiconductor device manufacturing method described later, and the like are stored in a readable manner.
  • the process recipe is a combination of processes so that a predetermined result can be obtained by causing the controller 121 to execute each step (each step) in the semiconductor device manufacturing method described later, and functions as a program.
  • the process recipe, the control program, and the like are collectively referred to simply as a program.
  • the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.
  • the I / O port 121d includes the above-described MFC 312, 322a, 322b, 332, 512, 522, 532, valves 314, 324a, 324b, 334, 514, 524, 534, a pressure sensor 245, an APC valve 243, a vacuum pump 246,
  • the heater 207, temperature sensor 263, rotation mechanism 267, boat elevator 115, and the like are connected.
  • the CPU 121a is configured to read and execute a control program from the storage device 121c and to read a recipe and the like from the storage device 121c in response to an operation command input from the input / output device 122 or the like.
  • the CPU 121a adjusts the flow rates of various gases by the MFCs 312, 322a, 322b, 332, 512, 522, and 532, and opens and closes the valves 314, 324a, 324b, 334, 514, 524, and 534 in accordance with the contents of the read recipe.
  • the controller 121 is stored in an external storage device 123 (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card).
  • the above-mentioned program can be configured by installing it in a computer.
  • the storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
  • the recording medium may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both.
  • the program may be provided to the computer using a communication means such as the Internet or a dedicated line without using the external storage device 123.
  • the first W layer is directly formed by supplying and exhausting B 2 H 6 gas to the wafer 200, and supplying and exhausting WF 6 gas to the wafer 200.
  • a step of performing the steps one or more times in order, and (D) W A step of directly forming a second W layer on the core layer, the step of simultaneously supplying H 2 gas and WF 6 gas to the wafer 200;
  • wafer when the term “wafer” is used, it means “wafer itself” or “a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface thereof”. "(That is, a wafer including a predetermined layer or film formed on the surface).
  • wafer surface when the term “wafer surface” is used in this specification, it means “the surface of the wafer itself (exposed surface)” or “the surface of a predetermined layer or film formed on the wafer”. That is, it may mean “the outermost surface of the wafer as a laminated body”.
  • substrate is also synonymous with the term “wafer”.
  • a plurality of wafers 200 having (exposed) a silicon oxide film (SiO film) as an insulating film on the outermost surface are loaded into the processing chamber 201 (boat loading). Specifically, when a plurality of wafers 200 are loaded into the boat 217 (wafer charge), the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 as shown in FIG. And is carried into the processing chamber 201. In this state, the seal cap 219 closes the lower end opening of the reaction tube 203 via the O-ring 220.
  • SiO film silicon oxide film
  • the inside of the processing chamber 201 is evacuated by a vacuum pump 246 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 keeps operating at least until the processing on the wafer 200 is completed. Further, the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. At this time, the energization amount to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the processing chamber 201 has a desired temperature distribution (temperature adjustment). The heating of the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed.
  • the valve 314 is opened, and B 2 H 6 gas that is the first reducing gas is caused to flow into the gas supply pipe 310.
  • the flow rate of the B 2 H 6 gas is adjusted by the MFC 312, supplied into the processing chamber 201 from the gas supply hole 410 a of the nozzle 410, and exhausted from the exhaust pipe 231.
  • B 2 H 6 gas is supplied to the wafer 200 on which the insulating film is formed.
  • the valve 514 is opened, and an inert gas such as N 2 gas is allowed to flow into the gas supply pipe 510.
  • the flow rate of the N 2 gas flowing through the gas supply pipe 510 is adjusted by the MFC 512, supplied into the processing chamber 201 together with the B 2 H 6 gas, and exhausted from the exhaust pipe 231.
  • the valves 524 and 534 are opened, and N 2 gas is allowed to flow into the gas supply pipes 520 and 530.
  • the N 2 gas is supplied into the processing chamber 201 through the gas supply pipes 320a, 320b, 330 and the nozzles 420, 430, and is exhausted from the exhaust pipe 231.
  • the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 1 to 3990 Pa.
  • the supply flow rate of B 2 H 6 controlled by the MFC 312 is, for example, a flow rate in the range of 0.01 to 20 slm.
  • the supply flow rate of N 2 gas controlled by the MFCs 512, 522, and 532 is set to a flow rate in the range of 0.1 to 30 slm, for example.
  • the time for supplying the B 2 H 6 gas to the wafer 200 is, for example, a time within the range of 0.01 to 60 seconds.
  • the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 becomes a temperature within the range of 100 to 350 ° C., for example.
  • the SiO film formed on the wafer 200 is reduced.
  • the adhesion between the SiO film and the WN film to be formed next can be improved.
  • the valve 314 is closed and the supply of B 2 H 6 gas is stopped. At this time, the film including the reduced SiO film is exposed on the outermost surface of the wafer 200. That is, the surface of the wafer 200 is reduced. At this time, the B 2 H 6 gas may be used in non-plasma without being plasma-excited. By performing preflow with non-plasma, the SiO film can be reduced without causing plasma damage to the SiO film.
  • WN film is a metal nitride film
  • a step of forming a WN film is performed on the wafer 200 where the reduced SiO film is exposed. That is, a WN film is formed directly on the SiO film.
  • the WN film acts as a barrier metal film.
  • B 2 H 6 gas supply step 11 The valve 314 is opened, and B 2 H 6 gas, which is a B-containing gas, is caused to flow into the gas supply pipe 310 as the first reducing gas.
  • the flow rate of the B 2 H 6 gas is adjusted by the MFC 312, supplied into the processing chamber 201 from the gas supply hole 410 a of the nozzle 410, and exhausted from the exhaust pipe 231.
  • B 2 H 6 gas is supplied to the wafer 200.
  • the valve 514 is opened and N 2 gas is allowed to flow into the gas supply pipe 510.
  • the flow rate of the N 2 gas flowing through the gas supply pipe 510 is adjusted by the MFC 512.
  • N 2 gas is supplied into the processing chamber 201 together with B 2 H 6 gas, and is exhausted from the exhaust pipe 231.
  • the valves 524 and 534 are opened, and N 2 gas is allowed to flow into the gas supply pipes 520 and 530.
  • the N 2 gas is supplied into the processing chamber 201 through the gas supply pipes 320a, 320b, 330 and the nozzles 420, 430, and is exhausted from the exhaust pipe 231.
  • the APC valve 243 When flowing the B 2 H 6 gas, the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 10 to 3990 Pa.
  • the supply flow rate of the B 2 H 6 gas controlled by the MFC 312 is, for example, a flow rate in the range of 0.01 to 20 slm.
  • the supply flow rate of N 2 gas controlled by the MFCs 512, 522, and 532 is set to a flow rate in the range of 0.0.01 to 30 slm, for example.
  • the time for supplying the B 2 H 6 gas to the wafer 200 is, for example, a time within the range of 0.01 to 60 seconds.
  • the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 becomes a temperature within the range of 100 to 350 ° C., for example.
  • the gas flowing into the processing chamber 201 is only B 2 H 6 gas and N 2 gas, and the outermost surface of the wafer 200 is reduced by supplying the B 2 H 6 gas.
  • the valve 334 is opened, and the WF 6 gas which is a raw material gas is caused to flow in the gas supply pipe 330.
  • the flow rate of the WF 6 gas is adjusted by the MFC 332, supplied from the gas supply hole 430 a of the nozzle 430 into the processing chamber 201, and exhausted from the exhaust pipe 231.
  • WF 6 gas is supplied to the wafer 200.
  • the valve 534 is opened, and an inert gas such as N 2 gas is allowed to flow into the gas supply pipe 530.
  • the flow rate of the N 2 gas flowing through the gas supply pipe 530 is adjusted by the MFC 532, supplied into the processing chamber 201 together with the WF 6 gas, and exhausted from the exhaust pipe 231.
  • the valves 514 and 524 are opened, and N 2 gas is allowed to flow into the gas supply pipes 510 and 520.
  • the N 2 gas is supplied into the processing chamber 201 through the gas supply pipes 310, 320 a, 320 b and the nozzles 410, 420 and is exhausted from the exhaust pipe 231.
  • the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 0.1 to 6650 Pa.
  • the supply flow rate of the WF 6 gas controlled by the MFC 332 is, for example, a flow rate in the range of 0.01 to 10 slm.
  • the supply flow rate of N 2 gas controlled by the MFCs 512, 522, and 532 is set to a flow rate in the range of 0.1 to 30 slm, for example.
  • the time for supplying the WF 6 gas to the wafer 200 is, for example, a time within the range of 0.01 to 600 seconds.
  • the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 becomes the same as that in step 11, for example.
  • the gases flowing into the processing chamber 201 are only WF 6 gas and N 2 gas.
  • NH 3 gas supply step 15 After the residual gas in the processing chamber 201 is removed, the valve 324a is opened, and NH 3 gas, which is an N-containing gas, is allowed to flow as a reaction gas into the gas supply pipe 320a. The flow rate of NH 3 gas is adjusted by the MFC 322 a, supplied to the processing chamber 201 from the gas supply hole 420 a of the nozzle 420, and exhausted from the exhaust pipe 231. At this time, NH 3 gas is supplied to the wafer 200. At the same time, the valve 524 is opened, and N 2 gas is caused to flow into the gas supply pipe 520. The flow rate of the N 2 gas flowing through the gas supply pipe 520 is adjusted by the MFC 522.
  • the N 2 gas is supplied into the processing chamber 201 together with the NH 3 gas, and is exhausted from the exhaust pipe 231.
  • the valves 514 and 534 are opened, and the N 2 gas is caused to flow into the gas supply pipes 510 and 530.
  • the N 2 gas is supplied into the processing chamber 201 through the gas supply pipes 310 and 330 and the nozzles 410 and 430 and is exhausted from the exhaust pipe 231.
  • the APC valve 243 When flowing NH 3 gas, the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is, for example, a pressure in the range of 0.1 to 6650 Pa.
  • the supply flow rate of NH 3 gas controlled by the MFC 322a is, for example, a flow rate in the range of 0.1 to 20 slm.
  • the supply flow rate of N 2 gas controlled by the MFCs 512, 522, and 532 is set to a flow rate in the range of 0.1 to 30 slm, for example.
  • the time for supplying the NH 3 gas to the wafer 200 is, for example, a time within the range of 0.01 to 30 seconds. At this time, the temperature of the heater 207 is set to the same temperature as in step 11.
  • the gases flowing into the processing chamber 201 are only NH 3 gas and N 2 gas.
  • the NH 3 gas undergoes a substitution reaction with at least a part of the W-containing layer formed on the wafer 200 in step 13.
  • W contained in the W-containing layer and N contained in the NH 3 gas are combined to form a WN layer containing W and N on the wafer 200.
  • a barrier metal having a predetermined thickness (for example, 0.1 to 3 nm) is formed on the wafer 200 by performing a cycle of performing the above steps 11 to 16 one or more times (a predetermined number of times (n times)).
  • a WN film which is a metal nitride film, is formed, and the above-described cycle is preferably repeated a plurality of times, and when forming a WN film, B 2 H 6 gas and WF 6 gas are mixed with each other.
  • the wafers 200 are alternately supplied to the wafers 200 (time division).
  • B 2 H 6 gas supply step 21 B 2 H 6 gas is allowed to flow into the processing chamber 201 under the same processing procedure and processing conditions as in step 11.
  • the gases flowing into the processing chamber 201 are only B 2 H 6 gas and N 2 gas, and the outermost surface of the wafer 200 is reduced by supplying the B 2 H 6 gas.
  • Step 22 After supplying the B 2 H 6 gas for a predetermined time, the valve 324a is closed and the supply of the B 2 H 6 gas is stopped. Then, the B 2 H 6 gas remaining in the processing chamber 201 and contributing to reduction is removed (removed) from the processing chamber 201 by the same processing procedure as in Step 12.
  • the WF 6 gas is caused to flow into the processing chamber 201 under the same processing procedure and processing conditions as in Step 13. At this time, the gases flowing into the processing chamber 201 are only WF 6 gas and N 2 gas.
  • a W-containing layer having a thickness of, for example, less than one atomic layer to several atomic layers is formed on the wafer 200.
  • a W nucleus having a predetermined thickness (for example, 0.5 to 2 nm) is formed on the wafer 200.
  • a W-containing layer is formed as a layer, and the above-described cycle is preferably repeated a plurality of times, and when forming a W nucleus layer, B 2 H 6 gas and WF 6 gas should not be mixed with each other ( (Time division) is alternately supplied to the wafer 200.
  • the W nucleus layer may be referred to as a first metal layer or a first W layer.
  • the valves 324b and 330 are opened, and H 2 gas and WF 6 gas are allowed to flow into the gas supply pipes 320b and 330, respectively.
  • the flow rate of the H 2 gas flowing in the gas supply pipe 320b and the WF 6 gas flowing in the gas supply pipe 330 are adjusted by the MFCs 322b and 330, respectively, and the processing chamber 201 is supplied from the gas supply holes 420a and 430a of the nozzles 420 and 430, respectively. Is exhausted from the exhaust pipe 231.
  • H 2 gas and WF 6 gas are supplied to the wafer 200. That is, the surface of the wafer 200 is exposed to H 2 gas and WF 6 gas.
  • the valves 514 and 524 are opened, and N 2 gas is caused to flow into the carrier gas supply pipes 510 and 520, respectively.
  • the N 2 gas flowing through the carrier gas supply pipes 510 and 520 is adjusted in flow rate by the MFCs 512 and 522, supplied to the processing chamber 201 together with the H 2 gas or WF 6 gas, and exhausted from the exhaust pipe 231.
  • the valve 514 is opened and N 2 gas is allowed to flow into the carrier gas supply pipe 510.
  • the N 2 gas is supplied into the processing chamber 201 through the gas supply pipe 310 and the nozzle 410 and is exhausted from the exhaust pipe 231.
  • the APC valve 243 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 10 to 3990 Pa.
  • the supply flow rate of H 2 gas controlled by the MFC 322b is set to a flow rate in the range of 100 to 20000 sccm, for example, and the supply flow rate of WF 6 gas controlled by the MFC 330 is set to a flow rate in the range of 10 to 1000 sccm, for example.
  • the supply flow rate of N 2 gas controlled by the MFCs 512, 522, and 532 is set to a flow rate within a range of 10 to 10,000 sccm, for example.
  • the time for supplying the H 2 gas and WF 6 gas to the wafer 200 is, for example, a time within the range of 1 to 1000 seconds.
  • the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 becomes a temperature within the range of 100 to 600 ° C., for example.
  • the gases flowing into the processing chamber 201 are only H 2 gas and WF 6 gas, and a thickness of, for example, 10 to 30 nm is formed on the W nucleus layer formed on the wafer 200 by the supply of the WF 6 gas.
  • W layer is formed. Note that the W layer may be referred to as a second metal layer or a second W layer.
  • the W nucleus layer and the W layer have substantially the same composition.
  • the valves 324b and 330 are closed, and the supply of H 2 gas and WF 6 gas is stopped.
  • the APC valve 243 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and the WF 6 gas remaining in the processing chamber 201 and contributing to formation of the W layer is left.
  • the valves 514, 524, and 534 remain open, and the supply of N 2 gas into the processing chamber 201 is maintained.
  • the N 2 gas acts as a purge gas, and it is possible to enhance the effect of removing the unreacted WF 6 gas remaining in the processing chamber 201 or contributing to formation of the W layer from the processing chamber 201.
  • N 2 gas is supplied into the processing chamber 201 from each of the gas supply pipes 510, 520, and 530 and exhausted from the exhaust pipe 231.
  • the N 2 gas acts as a purge gas, whereby the inside of the processing chamber 201 is purged with an inert gas, and the gas and by-products remaining in the processing chamber 201 are removed from the inside of the processing chamber 201 (after purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).
  • B 2 H 6 gas is continuously supplied in the B 2 H 6 preflow process (that is, an example in which one cycle of B 2 H 6 preflow is performed) has been described.
  • the present invention is not limited to this.
  • the B 2 H 6 preflow process and the subsequent residual gas removal process may be alternately repeated a plurality of times.
  • the H 2 gas and WF 6 gas described continuously examples of supplying the W layer forming step are not limited to this, and for example, the step of supplying H 2 gas and WF 6 gas and the subsequent residual gas removal step may be alternately repeated a plurality of times. That is, the H 2 gas and the WF 6 gas may be alternately supplied to the wafer 200 so as not to be mixed with each other (time-division).
  • the present invention is not limited thereto, and for example, a silicon nitride film (SiN film), a silicon oxynitride film (SiON film)
  • SiN film silicon nitride film
  • SiON film silicon oxynitride film
  • the present invention can also be applied to a substrate on which a silicon oxycarbonitride film (SiOCN film) or a polysilicon film (Poly-Si film) is formed.
  • the present invention is not limited to this, and monoborane (BH 3 ), triethylborane ((CH 3 CH 2). ) 3 B, may be used borane-based gas TEB) or the like.
  • a silane-based gas such as monosilane (SiH 4 ), disilane (Si 2 H 6 ), or trisilane (Si 3 H 8 ) may be used.
  • NH 3 gas as a nitriding gas, not limited to this, for example, nitrogen (N 2), nitrous oxide (N 2 O), diazene (N 2 H 2) Gas, hydrazine (N 2 H 4 ) gas, N 3 H 8 gas, monomethyl hydrazine (CH 6 N 2 ), dimethyl hydrazine (C 2 H 8 N 2 ), monomethylamine ((CH 3 ) NH 2 ), dimethylamine ((CH 3 ) 2 NH), trimethylamine ((CH 3 ) 3 N), monoethylamine (CH 3 CH 2 NH 2 ), diethylamine ((C 2 H 5 ) 2 NH), triethylamine ((C 2 H 5 ) 3 N) or the like can also be used.
  • deuterium has been described an example of using H 2 gas as H-containing gas as the second reducing gas, instead of H 2 gas, H-containing gas other elements free ( It is also possible to use D 2 ) gas or the like.
  • W is used as the metal element.
  • the present invention is not limited thereto, and titanium (Ti), tantalum (Ta), cobalt (Co), yttrium (Y), ruthenium (Ru), Aluminum (Al), molybdenum (Mo), niobium (Nb), manganese (Mn), nickel (Ni), or the like can also be used.
  • the substrate processing apparatus is a batch type vertical apparatus that processes a plurality of substrates at a time, and a nozzle for supplying a processing gas is erected in one reaction tube, and the reaction tube
  • the processing gas may be supplied from a gas supply port that opens in a side wall of the inner tube, instead of being supplied from a nozzle standing in the inner tube.
  • the exhaust port opened to the outer tube may be opened according to the height at which there are a plurality of substrates stacked and accommodated in the processing chamber.
  • the shape of the exhaust port may be a hole shape or a slit shape.
  • film formation can be performed with the same sequence and processing conditions as in the above-described embodiment.
  • the process recipes are the contents of the substrate processing (film type, composition ratio, film quality, film thickness, processing procedure, processing of the thin film to be formed) It is preferable to prepare individually (multiple preparations) according to the conditions. And when starting a substrate processing, it is preferable to select a suitable process recipe suitably from several process recipes according to the content of a substrate processing.
  • the substrate processing apparatus includes a plurality of process recipes individually prepared according to the contents of the substrate processing via an electric communication line or a recording medium (external storage device 123) on which the process recipe is recorded. It is preferable to store (install) in the storage device 121c in advance.
  • the CPU 121a included in the substrate processing apparatus When starting the substrate processing, the CPU 121a included in the substrate processing apparatus appropriately selects an appropriate process recipe from a plurality of process recipes stored in the storage device 121c according to the content of the substrate processing. Is preferred. With this configuration, thin films with various film types, composition ratios, film qualities, and film thicknesses can be formed for general use with good reproducibility using a single substrate processing apparatus. In addition, it is possible to reduce the operation burden on the operator (such as an input burden on the processing procedure and processing conditions), and to quickly start the substrate processing while avoiding an operation error.
  • the present invention can be realized by changing a process recipe of an existing substrate processing apparatus, for example.
  • the process recipe according to the present invention is installed in an existing substrate processing apparatus via a telecommunication line or a recording medium recording the process recipe, or input / output of the existing substrate processing apparatus It is also possible to operate the apparatus and change the process recipe itself to the process recipe according to the present invention.
  • controller 200 wafer (substrate) 201 processing chamber

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Le problème selon la présente invention est de fournir une technologie qui améliore l'adhérence entre un film d'isolation et un film métallique lors de la formation du film métallique sur le film d'isolation dans une étape de câblage, et permet d'obtenir une faible résistance de câblage. À cet effet, la présente invention comprend : une étape au cours de laquelle un premier gaz réducteur comprenant un gaz à base de borane ou un gaz à base de silane est fourni à un substrat ayant un film d'isolation formé sur la surface, pour réduire le film d'isolation ; une étape consistant à former, directement sur le film d'isolation réduit, un film de nitrure de métal comprenant un élément métallique, une étape au cours de laquelle le premier gaz réducteur est fourni au substrat et évacué, une étape au cours de laquelle un gaz contenant du métal comprenant l'élément métallique est fourni au substrat et évacué, et une étape au cours de laquelle un gaz de nitruration est fourni au substrat et évacué, étant effectuées dans cet ordre une ou plusieurs fois ; une étape consistant à former une première couche métallique directement sur le film de nitrure de métal, une étape au cours de laquelle le premier gaz réducteur est fourni au substrat et évacué, et une étape au cours de laquelle un gaz contenant du métal est fourni au substrat et évacué étant effectuées dans cet ordre une ou plusieurs fois ; et une étape consistant à former une seconde couche métallique directement sur la première couche métallique, un second gaz réducteur différent du premier gaz réducteur, et un gaz contenant du métal étant simultanément fournis au substrat.
PCT/JP2016/078819 2016-09-29 2016-09-29 Procédé de production de dispositif à semi-conducteur WO2018061144A1 (fr)

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JP2018541806A JP6652652B2 (ja) 2016-09-29 2016-09-29 半導体装置の製造方法および基板処理装置
PCT/JP2016/078819 WO2018061144A1 (fr) 2016-09-29 2016-09-29 Procédé de production de dispositif à semi-conducteur

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129231A (ja) * 1991-11-01 1993-05-25 Hitachi Ltd 電極配線
JPH10189492A (ja) * 1996-12-26 1998-07-21 Toshiba Corp 半導体装置及びその製造方法
JP2000223441A (ja) * 1999-01-27 2000-08-11 Sony Corp 電子装置およびその製造方法
JP2001319930A (ja) * 2000-03-02 2001-11-16 Tokyo Electron Ltd 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129231A (ja) * 1991-11-01 1993-05-25 Hitachi Ltd 電極配線
JPH10189492A (ja) * 1996-12-26 1998-07-21 Toshiba Corp 半導体装置及びその製造方法
JP2000223441A (ja) * 1999-01-27 2000-08-11 Sony Corp 電子装置およびその製造方法
JP2001319930A (ja) * 2000-03-02 2001-11-16 Tokyo Electron Ltd 半導体装置の製造方法

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