WO2018056205A1 - Procédé de production d'une structure de dissipation de chaleur - Google Patents

Procédé de production d'une structure de dissipation de chaleur Download PDF

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Publication number
WO2018056205A1
WO2018056205A1 PCT/JP2017/033437 JP2017033437W WO2018056205A1 WO 2018056205 A1 WO2018056205 A1 WO 2018056205A1 JP 2017033437 W JP2017033437 W JP 2017033437W WO 2018056205 A1 WO2018056205 A1 WO 2018056205A1
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Prior art keywords
resin
heat dissipation
sheet
resin sheet
manufacturing
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PCT/JP2017/033437
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English (en)
Japanese (ja)
Inventor
八木澤　隆
亘 岡田
美香 津田
敏寛 佐藤
晴行 秦野
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住友ベークライト株式会社
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Priority to JP2018541041A priority Critical patent/JP7200674B2/ja
Publication of WO2018056205A1 publication Critical patent/WO2018056205A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • the present invention relates to a method for manufacturing a heat dissipation structure.
  • the heat radiating sheet is usually used by being disposed between the heat generating member and the heat radiating member in order to release the heat of the heat generating member heated to a high temperature to the heat radiating member.
  • the heat radiating sheet is also used for the purpose of preventing a short circuit between the metal heat radiating member and the connection circuit wiring to the heating element. For this reason, the heat dissipation sheet is required to have insulating properties in addition to the heat dissipation properties.
  • Patent Document 1 Various studies have so far been made on manufacturing methods for realizing a heat-dissipating sheet satisfying such required performance.
  • the heat-dissipating sheet and the metal heat-dissipating member are pressure-bonded under a low-pressure condition from the viewpoint of protecting the heating element (electronic component) to be used.
  • pressure bonding is performed at such a low pressure, fine voids are generated inside the heat dissipation sheet, and as a result, the characteristics such as heat dissipation characteristics and insulation characteristics of the resulting heat dissipation structure may not be sufficiently improved.
  • the present invention provides a technique for producing a heat dissipation structure having both good heat dissipation characteristics and good insulating characteristics with a high yield.
  • a method for producing a heat dissipation structure comprising an adherend and a heat dissipation sheet bonded to the adherend,
  • the heat dissipation sheet is made of a cured product of a resin composition containing a thermosetting resin and a heat conductive filler,
  • the method is Preparing the adherend; Forming the resin composition into a sheet to obtain a resin sheet; Heating the resin sheet to a temperature equal to or higher than the softening point of the resin sheet to obtain a softened resin sheet; Cooling the resin sheet to a temperature lower than the softening point of the resin sheet while pressing the resin sheet with a first pressure P1 while the resin sheet in the softened state is in contact with the adherend; , Performing a heat treatment while pressurizing the resin sheet at a second pressure P2, to cure the resin sheet and obtain a heat dissipation sheet adhered to the adherend;
  • the manufacturing method of the heat dissipation structure is a method for manufacturing a heat dissipation structure including an adherend and a heat dissipation sheet bonded to the adherend.
  • the heat dissipation sheet is made of a cured product of a resin composition including a thermosetting resin and a heat conductive filler.
  • the manufacturing method of the heat dissipation structure of the present embodiment includes the following four steps. The first step is a step of preparing an adherend and forming a resin composition into a sheet to obtain a resin sheet.
  • a 2nd process is a process of obtaining the resin sheet in a softened state by heating a resin sheet to the temperature more than the softening point of this resin sheet.
  • the third step is to cool the resin sheet to a temperature below its softening point while pressing the resin sheet with the first pressure P1 while the softened resin sheet is in contact with the adherend. It is a process.
  • the resin sheet obtained in the third step is subjected to heat treatment while being pressurized at the second pressure P2, so that the resin sheet is cured and adhered to the adherend.
  • This is a step of obtaining a sheet.
  • the cured product of the resin sheet is referred to as a heat dissipation sheet.
  • the resin sheet in the softened state is in contact with the adherend, and the pressure P1 is applied to the resin sheet. It is important that the resin sheet and the adherend are bonded and cured at a pressure P2 equal to or lower than the pressure P1 in the fourth step after cooling under pressure under conditions. By doing this, even when the resin sheet and the adherend are bonded and cured at a pressure lower than that of the conventional method, the generation of fine voids inside the heat dissipation sheet obtained by curing the resin sheet is suppressed. As a result, a heat radiating structure having both good heat radiating characteristics and good insulating characteristics can be manufactured with high yield.
  • examples of the adherend include a metal heat radiating member.
  • examples of the adherend include a metal foil and a metal plate.
  • a material which comprises metal foil or a metal plate copper, aluminum, nickel, titanium and stainless steel, 42 alloys, iron alloys, such as Kovar, etc. are mentioned.
  • the heat radiating sheet is provided, for example, at a bonding interface in the semiconductor device where high thermal conductivity is required, and promotes heat conduction from the heat generating element to the heat radiating element. Thereby, it is possible to suppress a failure caused by characteristic fluctuations in the semiconductor chip or the like, and as a result, improve the quality stability of the semiconductor device.
  • a semiconductor device to which the heat dissipation structure according to this embodiment is applied for example, a semiconductor chip is mounted on a lead frame via a conductive member such as solder, and the semiconductor chip in the lead frame is mounted.
  • arranged so that the surface on the opposite side may be mentioned (specifically, it mentions later with reference to FIG. 1).
  • the heat dissipation structure preferably has a configuration in which a heat dissipation sheet and an adherend made of a metal plate are joined to each other.
  • the heat dissipation structure includes a metal foil or the like on which a circuit is formed as an adherend, and the adherend and
  • a conductive member such as solder and a semiconductor chip are arranged in this order on the surface of the heat dissipation structure on which the adherend is provided.
  • a metal base plate is disposed so as to be in contact with the surface of the heat dissipation structure opposite to the side on which the semiconductor chip is disposed (specifically, FIG. It will be described later with reference.)
  • the softened resin sheet in contact with the adherend and the pressure P1 is applied to the resin sheet.
  • the resin sheet and the adherend are bonded and cured at a pressure P2 that is equal to or lower than the pressure P1.
  • the resin sheet is in a fluidized state softened by heating in the second step, and is in a semi-cured state (B stage state) by processing in the subsequent third step. It is sufficiently cured by the processing in the subsequent fourth step.
  • an adherend made of a metal heat radiating member or the like is prepared, and a resin composition including a thermosetting resin and a heat conductive filler is formed into a sheet shape to obtain a resin sheet.
  • a resin sheet that is a sheet-like product of the resin composition
  • those produced by the following method can be used from the viewpoint of workability.
  • a solution in which each resin component including a thermosetting resin is added to a solvent is obtained.
  • a heat conductive filler is mixed into this solution to obtain a varnish-like resin composition in which the heat conductive filler is uniformly dispersed.
  • the solvent examples include methyl ethyl ketone, methyl isobutyl ketone, propylene glycol monomethyl ether, and cyclohexanone.
  • the obtained varnish-like resin composition was applied onto the surface of an adherend composed of a metal heat dissipation member or the like using a device such as a doctor blade or a die coater, and then dried.
  • the resin sheet with an adherend can be obtained by volatilizing the solvent contained in the resin composition.
  • the resin sheet may be produced by the following method.
  • a varnish-like resin composition is prepared by the same method as described above.
  • a substrate for example, a resin film made of a thermoplastic resin such as polyethylene terephthalate
  • This is dried to obtain a resin sheet with a substrate.
  • the resin sheet alone is attached to the adherend, or the resin sheet and the adherend are in contact with the base material-attached sheet.
  • the resin sheet can be adhered to the adherend by peeling off the substrate.
  • the timing which contacts a to-be-adhered body and a resin sheet is not limited to a 1st process, It may be in the middle of implementing the 2nd process mentioned later, It may be after performing the process of 2, ie, after making a resin sheet into a softened state.
  • the resin sheet is softened by heat treatment at a temperature equal to or higher than the softening point of the resin sheet.
  • the softening point of the resin sheet according to the present embodiment is preferably 60 ° C. or higher and 130 ° C. or lower, more preferably 70 ° C. or higher and 125 ° C. or lower, and still more preferably 80 ° C. or higher and 120 ° C. or lower.
  • the softening point of the resin sheet can be measured by a method based on JIS C 2161 (2010) using a Kofler hot bench.
  • the softened resin sheet is pressed with the first pressure P1 while the softened resin sheet is in contact with the adherend.
  • the resin sheet is cooled to a temperature lower than the softening point of the resin sheet to bring the resin sheet into a semi-cured state (B stage state).
  • the pressure P1 in the third step is preferably 2 MPa or more and 20 MPa or less, and more preferably 10 MPa or more and 20 MPa or less.
  • the pressure P1 in the third step is preferably 2 MPa or more and 20 MPa or less, and more preferably 10 MPa or more and 20 MPa or less.
  • the fourth step by subjecting the laminate of the resin sheet and adherend obtained in the third step to heat treatment while applying pressure to the resin sheet at the second pressure P2, The resin sheet is cured to obtain a heat dissipation sheet adhered to the adherend.
  • the thermal radiation structure concerning this embodiment provided with an adherend and a heat dissipation sheet joined to the adherend can be obtained.
  • the second pressure P2 is equal to or lower than the first pressure P1, but is preferably lower than the pressure P1.
  • the second pressure P2 is preferably 0.5 MPa or more and 10 MPa or less, and more preferably 0.5 MPa or more and 8 MPa or less.
  • the ratio between the first pressure P1 and the second pressure P2 and the value of P1 / P2 are preferably 1 or more and 20 or less, more preferably 1 or more and 10 or less. More preferably, it is 2 or more and 5 or less.
  • the thermal conductivity in the thickness direction of the heat dissipation sheet according to this embodiment is preferably 6 W / m ⁇ K or more and 25 W / m ⁇ K from the viewpoint of excellent heat dissipation characteristics of the finally obtained heat dissipation structure. Or less, more preferably 7 W / m ⁇ K or more and 25 W / m ⁇ K or less.
  • the value of SG1 / SG2 that is the ratio of the measured specific gravity SG1 and the theoretical specific gravity SG2 is preferably 0.95. It is 1 or less and more preferably 0.96 or more and 1 or less.
  • the theoretical specific gravity of the heat dissipation sheet can be calculated from the specific gravity of the raw material for manufacturing the heat dissipation sheet and the blending ratio.
  • the measured specific gravity of the heat dissipation sheet can be measured by an underwater substitution method (Archimedes method).
  • thermosetting resins used in the resin composition include epoxy resins, cyanate resins, isocyanate resins, polyimide resins, benzoxazine resins, unsaturated polyester resins, phenol resins, melamine resins, silicone resins, bismaleimide resins, An acrylic resin etc. are mentioned.
  • the thermosetting resin one of these may be used alone, or two or more may be used in combination.
  • it is preferable that at least any one of an epoxy resin and cyanate resin is included from a viewpoint of improving the heat conductivity of a thermal radiation structure.
  • any monomer, oligomer or polymer having an arbitrary molecular weight and an arbitrary molecular structure and having two or more epoxy groups in one molecule can be used.
  • an epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, bisphenol S type epoxy resin, bisphenol M type epoxy resin (4,4 ′-(1,3 -Phenylenediisopridiene) bisphenol type epoxy resin), bisphenol P type epoxy resin (4,4 '-(1,4-phenylenediisopridiene) bisphenol type epoxy resin), bisphenol Z type epoxy resin (4,4 Bisphenol type epoxy resins such as' -cyclohexyldiene bisphenol type epoxy resins); phenol novolak type epoxy resins, cresol novolak type epoxy resins, trisphenol group methane type novolak resins, tetraphenol group ethane type novolak type resins Novolak type epoxy resins such as xoxy resins and novolak
  • Examples of the epoxy resin contained in the resin composition include dicyclopentadiene type epoxy resin (epoxy resin having a dicyclopentadiene skeleton), biphenyl type epoxy resin (epoxy resin having a biphenyl skeleton), and adamantane type epoxy resin (adamantane skeleton).
  • the epoxy equivalent of the epoxy resin is preferably 1.5 ⁇ 10 2 g / eq or more, more preferably 1.8 ⁇ 10 2 g / eq or more, and further preferably 2.0 ⁇ 10 2 g / eq. Above, most preferably 2.2 ⁇ 10 2 g / eq or more.
  • the upper limit of the epoxy equivalent of the epoxy resin may be, for example, 6.0 ⁇ 10 2 g / eq or less, or 5.0 ⁇ 10 2 g / eq or less, from the viewpoint of improving handling properties. .
  • the total solid content of the resin composition remains as a solid content when the resin composition is heated and cured. For example, components that volatilize by heating such as a solvent are excluded. On the other hand, liquid components such as a liquid epoxy resin and a coupling agent at 25 ° C. are included in the total solid content because they are taken into the solid content of the resin composition when heated and cured.
  • the cyanate resin used in the resin composition for example, a product obtained by reacting a cyanogen halide compound with phenols, or a product prepolymerized by a method such as heating as necessary can be used.
  • the cyanate resin includes novolak-type cyanate resin, bisphenol A-type cyanate resin, bisphenol E-type cyanate resin, tetramethylbisphenol F-type cyanate resin, and other bisphenol-type cyanate resins, and naphthol-aralkyl-type polyvalent naphthols.
  • cyanate resin obtained by reaction with cyanogen halide, dicyclopentadiene type cyanate resin, biphenylalkyl type cyanate resin, and the like may be used alone or in combination of two or more.
  • novolak-type cyanate resin is preferable. By using the novolac type cyanate resin, the crosslink density is increased and the heat resistance can be improved.
  • the content of the cyanate resin contained in the resin composition is preferably 2% by mass or more and 25% by mass or less, more preferably 3.5% by mass or more and 20% by mass or less with respect to 100% by mass of the total solid content of the resin composition. preferable.
  • the content of the cyanate resin is not less than the above lower limit value, the insulating properties of the obtained heat dissipation structure can be further improved, and the flexibility and bending resistance of the obtained heat dissipation structure can be improved. The deterioration of the handling property of the heat-dissipating sheet due to the high filling can be suppressed.
  • the content of the cyanate resin is not more than the above upper limit, the moisture resistance of the obtained heat dissipation structure can be improved.
  • the content of the thermosetting resin is preferably 1% by mass or more and 40% by mass or less, and more preferably 5% by mass or more and 38% by mass or less with respect to the total solid content of the resin composition.
  • content of a thermosetting resin may become more than the said lower limit, since handleability can be improved, the manufacturability of a thermal radiation sheet can be improved.
  • content of a thermosetting resin may become below the said upper limit, the intensity
  • the heat conductive filler according to this embodiment include silica, alumina, boron nitride, aluminum nitride, silicon nitride, silicon carbide, and the like. These may be used alone or in combination of two or more. Among these, from the viewpoint of producing a heat dissipation structure having an excellent balance between heat dissipation characteristics and insulation characteristics, it is preferable to include secondary aggregated particles (aggregated boron nitride) formed by aggregating the primary particles of scaly boron nitride. .
  • Secondary agglomerated particles (aggregated boron nitride) formed by aggregating the scaly boron nitride primary particles can be produced, for example, by the following procedure.
  • boron carbide is nitrided in a nitrogen atmosphere, for example, at 1200 to 2500 ° C. for 2 to 24 hours.
  • it can be formed by adding diboron trioxide to the obtained boron nitride and firing it in a non-oxidizing atmosphere.
  • the firing temperature is, for example, 1200 to 2500 ° C.
  • the firing time is, for example, 2 to 24 hours.
  • a procedure for producing secondary agglomerated particles (aggregated boron nitride) formed by aggregating the primary particles of scaly boron nitride which is different from the above method, there are the following methods.
  • the firing temperature is, for example, 1200 to 2500 ° C.
  • the firing time is, for example, 2 to 24 hours.
  • thermosetting resin when using secondary agglomerated particles (aggregated boron nitride) obtained by sintering primary particles of flaky boron nitride as the heat conductive filler, the dispersibility of the heat conductive filler in the thermosetting resin From the viewpoint of improving the quality, an epoxy resin can be suitably used as the thermosetting resin.
  • the average particle diameter of secondary aggregated particles (aggregated boron nitride) formed by aggregating scaly boron nitride is preferably 5 ⁇ m or more and 180 ⁇ m or less, and more preferably 10 ⁇ m or more and 100 ⁇ m or less. Thereby, a more excellent heat dissipation sheet can be realized due to a balance between thermal conductivity and insulation.
  • the average particle diameter of the secondary agglomerated particles (aggregated boron nitride) refers to the median diameter (D 50 ) when the particle size distribution of the particles is measured on a volume basis by a laser diffraction particle size distribution measuring device.
  • the average major axis of the primary particles of the scaly boron nitride constituting the secondary aggregated particles (aggregated boron nitride) is preferably 0.01 ⁇ m or more and 20 ⁇ m or less, and more preferably 0.1 ⁇ m or more and 15 ⁇ m or less. Thereby, a more excellent heat dissipation sheet can be realized due to a balance between thermal conductivity and insulation.
  • the average major axis can be measured by an electron micrograph. For example, the measurement is performed according to the following procedure. First, secondary agglomerated particles are cut with a microtome or the like to prepare a sample.
  • the content of the heat conductive filler is preferably 50% by mass or more and 80% by mass or less, more preferably 55% by mass or more and 78% by mass or less, further preferably, based on the total solid content of the resin composition. Is 60 mass% or more and 75 mass% or less.
  • the resin composition may contain a curing agent.
  • the curing agent include a curing catalyst and a phenol resin curing agent.
  • the curing catalyst include organic metal salts such as zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, bisacetylacetonate cobalt (II), and trisacetylacetonate cobalt (III); triethylamine, tributylamine, Tertiary amines such as 1,4-diazabicyclo [2.2.2] octane; 2-phenyl-4-methylimidazole, 2-ethyl-4-methylimidazole, 2,4-diethylimidazole, 2-phenyl-4 -Imidazoles such as methyl-5-hydroxyimidazole and 2-phenyl-4,5-dihydroxymethylimidazole; triphenylphosphine, tri-p-tolylphosphine,
  • the curing catalyst one kind including these derivatives can be used alone, or two or more kinds including these derivatives can be used in combination.
  • the content of the curing catalyst contained in the heat dissipation sheet according to the present embodiment is preferably 0.001% by mass or more and 1% by mass or less with respect to the total solid content of the resin composition.
  • the phenol resin curing agent is a monomer, oligomer, or polymer in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited.
  • Resin cresol novolak resin, novolak type resin such as naphthol novolak resin, etc .; polyfunctional phenol resin such as trisphenol methane type phenol resin; modified phenol resin such as terpene modified phenol resin, dicyclopentadiene modified phenol resin; Or, an aralkyl type resin such as a phenol aralkyl resin having a biphenylene skeleton, a phenylene and / or a naphthol aralkyl resin having a biphenylene skeleton; a bisphenol compound such as bisphenol A or bisphenol F, etc. That. These may be used alone or in combination of two or more.
  • Such a phenol resin curing agent provides a good balance of flame resistance, moisture resistance, electrical properties, curability, storage stability, and the like.
  • the hydroxyl equivalent is preferably 90 g / eq or more and 250 g / eq or less.
  • the phenol resin curing agent is preferably a novolac type phenol resin or a resol type phenol resin.
  • the content of the phenol resin curing agent is preferably 1% by mass to 30% by mass and more preferably 5% by mass to 15% by mass with respect to the total solid content of the resin composition.
  • the resin composition may contain a coupling agent.
  • a coupling agent By including a coupling agent in the resin composition, the wettability of the interface between the thermosetting resin and the heat conductive filler can be improved.
  • the coupling agent examples include an epoxy silane coupling agent, a cationic silane coupling agent, an amino silane coupling agent, a titanate coupling agent, and a silicone oil type coupling agent. These may be used individually by 1 type and may use 2 or more types together.
  • the addition amount of the coupling agent may be appropriately adjusted according to the specific surface area of the heat conductive filler. For example, it may be 0.1 parts by mass or more and 10 parts by mass or less with respect to the total amount of the heat conductive filler. It is good also as 5 to 7 mass parts.
  • the resin composition may contain a phenoxy resin.
  • a phenoxy resin By using a phenoxy resin, the elastic modulus of the heat dissipation sheet can be reduced, and as a result, the bending resistance of the heat dissipation sheet can be improved.
  • the elastic modulus of the heat dissipation sheet can be reduced, and as a result, the stress relaxation force of the heat dissipation sheet can be improved.
  • fluidity can be reduced due to an increase in viscosity, and therefore generation of voids such as voids can be suppressed.
  • the adhesiveness of a heat radiating sheet and a heat radiating member can also be improved.
  • the phenoxy resin examples include a phenoxy resin having a bisphenol skeleton such as a bisphenol A type phenoxy resin, a phenoxy resin having a naphthalene skeleton, a phenoxy resin having an anthracene skeleton, and a phenoxy resin having a biphenyl skeleton.
  • a phenoxy resin having a structure having a plurality of these skeletons can also be used.
  • the content of the phenoxy resin is preferably 3% by mass or more and 11% by mass or less with respect to the total solid content of the resin composition.
  • the resin composition can contain an antioxidant, a leveling agent and the like as long as the effects of the present invention are not impaired.
  • the heat dissipation structure according to this embodiment is obtained by the manufacturing method described above. Therefore, the heat dissipation structure according to the present embodiment has both good heat dissipation characteristics and good insulating characteristics.
  • the heat dissipation structure according to this embodiment can be used as a heat conductive material in a semiconductor device.
  • the semiconductor device according to the present embodiment will be described with reference to FIGS. 1 and 2 are both cross-sectional views showing an example of the semiconductor device according to the present embodiment.
  • the positional relationship (vertical relationship or the like) of each component of the semiconductor device 100 and the semiconductor device 200 may be described as the relationship shown in each drawing. However, the positional relationship in this description is irrelevant to the positional relationship when the semiconductor device 100 and the semiconductor device 200 are used or manufactured.
  • FIG. 1 An example of the semiconductor device according to this embodiment is shown in FIG. Specifically, as shown in FIG. 1, the semiconductor chip 10 is mounted on the lead frame 30 via a conductive member 20 such as solder, and what is the side on which the semiconductor chip 10 is mounted in the lead frame 30?
  • a semiconductor device 100 having a configuration in which a heat dissipation structure 50 formed by bonding a heat dissipation sheet 40 and an adherend 45 made of a metal plate to each other is provided so as to be in contact with the opposite surface.
  • the semiconductor chip 10, the conductive member 20, the lead frame 30, and the heat dissipation structure 50 are sealed with a sealing material 60 that is configured using a known resin material. Further, in the semiconductor device 100, the semiconductor chip 10 and the lead frame 30 are electrically connected via a wire 70.
  • FIG. 2 a heat radiating structure 150 in which a metal foil provided with a circuit is bonded to an adherend 145 (hereinafter also referred to as a circuit layer 145) and a heat radiating sheet 148.
  • the conductive member 120 such as solder and the semiconductor chip 130 are arranged in this order on the surface on which the adherend 145 is provided, and the side of the heat dissipation structure 150 on which the semiconductor chip 130 is arranged.
  • a semiconductor device 200 having a configuration in which a metal base plate 140 is disposed so as to be in contact with a surface on the opposite side from the above.
  • the semiconductor chip 130, the circuit layer 145, and the electrode terminal 160 are electrically joined via wires 170.
  • the semiconductor chip 130, the circuit layer 145, and the conductive member 120 are sealed with a sealing material 180.
  • a sealing material 180 a known liquid epoxy sealing material or silicone gel sealing material can be used.
  • the semiconductor device 200 may be accommodated in the housing 190.
  • a power module including the substrate and the semiconductor device can be obtained.
  • thermosetting resin and a curing agent were added to methyl ethyl ketone, and this was stirred to obtain a solution of a thermosetting resin composition. Subsequently, the heat conductive filler was mixed with this solution, and the varnish-like thermosetting resin composition which disperse
  • thermosetting resin composition was applied onto a copper foil (thickness 0.07 mm, manufactured by Furukawa Electric Co., Ltd., GTS-MP foil) using a doctor blade method, and then applied at 100 ° C., 30
  • the resin sheet with a copper foil in a B stage state was obtained by drying by heat treatment for minutes.
  • the resin sheet with a copper foil was softened by heating at the temperature shown in Table 1 for 5 minutes.
  • the resin sheet with copper foil in the softened state was cooled to a temperature lower than the softening point of the resin sheet while being pressurized with the pressure P1 shown in Table 1.
  • the cured state of the obtained resin sheet was a B-stage state (semi-cured state). Then, the obtained resin sheet was pressurized at a pressure P2 shown in Table 1 under a temperature condition of 180 ° C., thereby curing the resin sheet and obtaining a heat dissipation structure.
  • the details of each component in Table 1 are as follows. Moreover, when producing the heat radiating sheet of Comparative Example 4, no pressurization was performed as shown in Table 1 below. Similarly, when producing the heat dissipation sheet of Comparative Example 5, no pressurization was performed as shown in Table 1 below.
  • Epoxy resin 1 dicyclopentadiene type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., XD-1000)
  • Epoxy resin 2 bisphenol F type epoxy resin (DIC, 830S)
  • Cyanate resin Novolac type cyanate resin (Lonza, PT-30S)
  • Phenoxy resin Bisphenol A type phenoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., YP-55S)
  • Curing catalyst 2-phenyl-4-methylimidazole (manufactured by Shikoku Kasei Co., Ltd., 2P4MZ)
  • Thermal conductive filler (Thermal conductive filler) -Thermal conductive filler 1: Aggregated boron nitride (manufactured by Mizushima Alloy Iron Company, HP40MF100)
  • the counter electrode used the copper foil used as a base material at the time of sheet preparation.
  • the heat dissipation structures obtained in the examples are all superior in terms of heat dissipation characteristics and insulation characteristics compared to the heat dissipation structures obtained in the comparative examples, and have good heat dissipation characteristics and good insulation characteristics. Was compatible.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un procédé de production d'une structure de dissipation de chaleur (150) comprenant une surface adhésive (145) et une feuille de dissipation de chaleur (148) collée à la surface adhésive (145), la feuille de dissipation de chaleur (148) étant constituée d'un produit durci d'une composition de résine contenant une résine thermodurcissable et une charge thermoconductrice. Le procédé comprend une étape de préparation de la surface adhésive (145), une étape de moulage de la composition de résine en une feuille afin d'obtenir une feuille de résine, une étape de chauffage de la feuille de résine à une température égale ou supérieure au point de ramollissement de la feuille de résine afin d'obtenir une feuille de résine dans un état ramolli, une étape de refroidissement de la feuille de résine à une température inférieure au point de ramollissement de la feuille de résine tout en mettant sous pression la feuille de résine à une première pression P1 dans un état dans lequel la feuille de résine dans l'état ramolli est en contact avec la surface adhésive (145), et une étape de réalisation d'un traitement thermique tout en mettant sous pression la feuille de résine à une deuxième pression P2 pour durcir la feuille de résine et obtenir la feuille de dissipation de chaleur (185) liée à la surface adhésive. La première pression P1 est égale ou supérieure à la deuxième pression P2.
PCT/JP2017/033437 2016-09-20 2017-09-15 Procédé de production d'une structure de dissipation de chaleur WO2018056205A1 (fr)

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JP2021034539A (ja) * 2019-08-23 2021-03-01 デンカ株式会社 放熱シート及び放熱シートの製造方法

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