WO2018040464A1 - 一种基于igzo-tft的boa液晶面板的结构及制作方法 - Google Patents

一种基于igzo-tft的boa液晶面板的结构及制作方法 Download PDF

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WO2018040464A1
WO2018040464A1 PCT/CN2017/070280 CN2017070280W WO2018040464A1 WO 2018040464 A1 WO2018040464 A1 WO 2018040464A1 CN 2017070280 W CN2017070280 W CN 2017070280W WO 2018040464 A1 WO2018040464 A1 WO 2018040464A1
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igzo
pattern
film
tft
liquid crystal
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French (fr)
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石龙强
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Definitions

  • the invention relates to the field of liquid crystals, in particular to a structure and a manufacturing method of a BOA liquid crystal panel based on IGZO-TFT.
  • IGZO indium gallium zinc oxide
  • TFT Thin Film Transistor
  • BOA Black Martix On Array, black matrix on the array substrate
  • the process eliminates the CF (color filter) substrate, which not only reduces the CF process, reduces the cost, but also improves the alignment accuracy of the process, which is beneficial to the production of high aperture ratio and high resolution display. .
  • the traditional BOA BM Black Martix Black Matrix
  • the traditional BOA BM is an organic photoresist, which is patterned after R, G, and B are finished. Since the black matrix has high optical density (OD) requirements, and the existing black matrix (BM) for the BOA structure has a low optical density value, the black matrix (BM) coating is thick, but this causes the occlusion array substrate to be blocked.
  • the upper mark (mark) is not conducive to the exposure alignment in the process. Moreover, the tapper angle of the too high black matrix is difficult to control, and it is relatively steep, which is easy to cause pixel (pixel) ITO (ITO is an N-type oxide).
  • Metal oxides have better insulation properties, but many metal oxides, especially those that are easy to industrialize, have good light transmission properties, such as Al 2 O 3 , which are not suitable for black matrix (BM). Materials, however, the inventors of the present invention found that copper oxide (CuO) is a black oxide and is extremely easy to use in industrial production and can be used as a BM material.
  • CuO copper oxide
  • IGZO Due to high mobility, IGZO has good film formation uniformity, easy to be large-sized, and arsenic (As) With the same process, it is a good TFT active layer material. It has been widely developed in recent years. IGZO is similar to ITO and is easily etched by aluminum (Al) acid, so it is generally not suitable for BCE (BackChannel Etched) structure. Because the BCE structure etches the source drain while etching the IGZO layer, the TFT device fabrication fails.
  • the inventors of the present invention have devised a structure and a manufacturing method of a BOA liquid crystal panel based on IGZO-TFT to overcome the above drawbacks.
  • the object of the present invention is to provide a structure and a manufacturing method of a BOA liquid crystal panel based on IGZO-TFT, which proposes a BOA device of a IGZO-TFT having a black matrix coplanar structure using copper oxide, effectively avoiding IGZO being etched. risks of.
  • the present invention provides a method for fabricating a BOA liquid crystal panel based on IGZO-TFT, which has the following steps:
  • GI film formation is performed on the finished product of step (2) to form a GI film;
  • IGZO film formation is performed on a gate pattern covered by a GI film and between source and drain electrodes to obtain an IGZO pattern;
  • PV is formed on the finished product of step (5), and a contact hole is formed on the source and drain through the PV film;
  • step (7) making R/G/B: performing R/G/B coating on the finished product of step (6), leaving the contact hole and exposing to obtain a desired pattern;
  • ITO film formation was carried out by covering the contact holes and the opening regions, and then exposed to obtain an ITO pattern.
  • step (1) copper film formation is performed by physical vapor deposition.
  • the manufacturing method of the IGZO-TFT-based BOA liquid crystal panel wherein, in the step (2), The gate is formed by physical vapor deposition, then exposed, and then dried to obtain a gate pattern.
  • the material of the gate pattern is copper.
  • GI film formation is performed by chemical vapor deposition, and the material of the GI film is silicon dioxide.
  • the method for fabricating an IGZO-TFT-based BOA liquid crystal panel wherein in the step (4), the source and the drain are formed by physical vapor deposition, and then exposed, and then the source and drain patterns are obtained by wet etching.
  • the material of the source drain pattern is copper.
  • the metal oxide IGZO is formed by physical vapor deposition, and then exposed, and then the IGZO pattern is obtained by wet etching.
  • step (6) PV film formation is performed by chemical vapor deposition, and the material of the PV is SiO 2 .
  • ITO is formed by physical vapor deposition, and then exposed, and then an ITO pattern is obtained by wet etching.
  • the present invention also provides a structure of an IGZO-TFT based BOA liquid crystal panel, comprising a substrate having a black matrix pattern thereon, and the black matrix pattern exposing an open area, the black matrix pattern having a gate a pattern having a GI film on the substrate, a black matrix pattern, and a gate pattern, a source and a drain on a gate pattern covered by the GI film, and an IGZO film on the gate pattern covered by the GI film and between the source and the drain a PV film on the source drain, the IGZO film, and the GI film, and the PV film has a contact hole at a corresponding source and drain, and has an R/G/B coating layer on the PV film except for the contact hole, covering The contact hole and the open area have an ITO pattern.
  • the invention has the beneficial effects that the present invention is directed to the difficulty in fabricating the black matrix (BM) of the existing BOA structure and the IGZO etching in the BCE structure of the IGZO-TFT, and proposes a IGZO using a copper oxide as a coplanar structure of a black matrix.
  • BM black matrix
  • IGZO-TFT proposes a IGZO using a copper oxide as a coplanar structure of a black matrix.
  • the invention adopts the structure of the bottom gate bottom contact, and the fabrication is to first make the source drain and then do IGZO, so that the risk of IGZO being etched is effectively avoided.
  • Figure 1 is a schematic view of making a BM pattern
  • Figure 2 is a schematic diagram of making a Gate graphic
  • Figure 3 is a schematic view showing the production of a GI film
  • FIG. 4 is a schematic view showing a source drain
  • Figure 5 is a schematic view showing an IGZO pattern
  • Figure 6 is a schematic view showing the production of a PV film
  • Figure 7 is a schematic diagram of making R/G/B
  • Fig. 8 is a schematic view showing the production of an ITO pattern.
  • the invention provides a method for fabricating a BOA liquid crystal panel based on IGZO-TFT, which has the following steps:
  • copper (Cu) is formed on the substrate 1 by physical vapor deposition (PVD), and then subjected to an oxygen plasma (O 2 plasma) treatment to obtain copper oxide (CuO). That is, copper oxide (CuO) is used as a shielding layer of BM, and patterning treatment is performed, and the opening region 3 is exposed. Then, exposure is performed, and wet etching is performed to obtain BM pattern 2. It should be emphasized that the BM pattern only exposes the open area 3.
  • PVD physical vapor deposition
  • O 2 plasma oxygen plasma
  • Gate is formed on the BM pattern 2 by physical vapor deposition (PVD), then exposed, and dry etched to obtain a Gate pattern 4.
  • the material of the Gate pattern 4 is preferably copper (Cu).
  • GI film formation was performed by Chemical Vapor Deposition (CVD) as a whole.
  • the material of the GI thin film 5 is preferably silicon dioxide (SiO 2 ).
  • source-drain film formation is performed by physical vapor deposition (PVD) on the Gate pattern 4 covered by the GI film 5, and then exposed, and wet-etched to obtain a source-drain pattern.
  • PVD physical vapor deposition
  • the material of the source and drain 6 The material is preferably copper (Cu).
  • metal oxide is formed by physical vapor deposition (PVD) on the Gate pattern 4 covered by the GI film 5, between the source and the drain, and then exposed, and wet etching is performed to obtain metal oxide.
  • PV film formation is performed by chemical vapor deposition (CVD) as a whole, and a pixel (Pixel) contact hole 9 is obtained by dry etching through the PV film 8 on the source and drain electrodes 6.
  • the PV material is preferably SiO 2 .
  • the R/G/B 10 coating was performed as a whole, leaving the contact holes 9 and exposed to obtain a desired pattern.
  • the ITO film is formed by covering the contact hole 9 and the opening region 3 by physical vapor deposition (PVD), followed by exposure, and wet etching to obtain an ITO pattern 11.
  • PVD physical vapor deposition
  • the present invention also provides a structure of a BOA liquid crystal panel based on IGZO-TFT, as shown in FIG. 8, which mainly includes a substrate 1 having a BM pattern 2 thereon, and the BM pattern 2 exposes the opening region 3
  • the BM pattern 2 has a Gate pattern 4, and the substrate 1, the BM pattern 2, and the Gate pattern 4 have a GI film 5, and the source pattern 6 is provided on the Gate pattern 4 covered by the GI film 5.
  • the Gate film 4 covered by the GI film 5 has an IGZO film 7 between the source and drain electrodes 6, and has a PV film 8 as a whole, and the PV film 8 has a contact hole 9 at the corresponding source and drain electrodes 6, and R is performed as a whole.
  • the /G/B 10 is coated, leaving the contact hole 9, covering the contact hole 9 and the opening region 3 having the ITO pattern 11.
  • the present invention is directed to the difficulty in fabricating the existing BOA structure BM and the IGZO etching in the BCE structure of the IGZO-TFT, and proposes a BOA device of IGZO-TFT using CoO as a coplanar Structrue of BM, which effectively solves the problem.
  • the present invention adopts a structure of a bottom gate contact (coplanar), which is to make a source drain first, and then IGZO, so that the risk of IGZO being etched is effectively avoided.

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Abstract

一种基于IGZO-TFT的BOA液晶面板的结构及制作方法，其中方法具有如下步骤：(1)制作黑色矩阵(2)；(2)制作栅(4)；(3)制作GI(5)；(4)制作源漏极(6)；(5)制作IGZO(7)；(6)制作PV(8)；(7)制作R/G/B(10)；(8)制作ITO(11)。该制作方法提出了用氧化铜做黑色矩阵(2)的共平面结构的IGZO-TFT的BOA器件，有效地避免IGZO(7)被刻蚀的风险。

Description

一种基于IGZO-TFT的BOA液晶面板的结构及制作方法
相关申请的交叉引用
本申请要求享有于2016年08月31日提交的名称为“一种基于IGZO-TFT的BOA液晶面板的结构及制作方法”的中国专利申请CN2016107967452的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及液晶领域，特别涉及一种基于IGZO-TFT的BOA液晶面板的结构及制作方法。
背景技术
首先，解释两个名词，IGZO(indium gallium zinc oxide，铟镓锌氧化物)为一种金属氧化物，而TFT(Thin Film Transistor)为薄膜晶体管。BOA(Black Martix On Array，黑色矩阵做在阵列基板上)是目前一种流行的LCD做法。该工艺省去了CF(color filter，彩色滤光片)基板，这样做不仅减去了CF工艺，降低成本，而且提高了制程的对位精度，有利于高开口率和高分辨率显示器的制作。
传统BOA的BM(Black Martix黑色矩阵)为有机光阻，是做完R、G、B后再做图案化处理。由于黑色矩阵对光学密度(OD)要求高，而现有的针对BOA结构的黑色矩阵(BM)的对光学密度值低，所以黑色矩阵(BM)涂布很厚，然而这样会导致遮挡阵列基板上的对位标记(mark)，不利于制程中的曝光对位，而且，过高的黑色矩阵的tapper角度难控制，比较陡，容易造成像素(pixel)ITO(ITO是一种N型氧化物半导体-氧化铟锡，ITO薄膜即铟锡氧化物半导体透明导电膜)搭接上去会断线的问题。
金属氧化物的绝缘性比较好，然而许多金属氧化物，特别是容易工业化应用的材料，大多数透光性能好，如三氧化二铝(Al2O3)，不适合做黑色矩阵(BM)材料，然而，本发明的发明人发现氧化铜(CuO)是一种黑色的氧化物，而且极易用于工业化生产，可以用来做BM材料。
IGZO由于高迁移率，成膜均匀性好，易于大尺寸化制作，并且和砷(As) 有相同的制程，是很好的TFT有源层材料。近年来得到广泛发展。IGZO由于和ITO的性质相似，容易被铝(Al)酸刻蚀，所以一般而言，不适合做BCE(BackChannel Etched，背沟道刻蚀型)结构的器件。因为BCE结构在刻蚀源漏极的同时，会将IGZO层刻蚀掉，导致TFT器件制作失败。
鉴于此，本发明的发明人设计出一种基于IGZO-TFT的BOA液晶面板的结构和制作方法，以克服上述缺陷。
发明内容
本发明的目的是提供一种基于IGZO-TFT的BOA液晶面板的结构及制作方法，其提出了用氧化铜做黑色矩阵的共平面结构的IGZO-TFT的BOA器件，有效地避免IGZO被刻蚀的风险。
为达上述目的，本发明提供一种基于IGZO-TFT的BOA液晶面板的制作方法，其具有如下步骤：
(1)制作黑色矩阵：在基板上进行铜成膜，然后经过氧化处理得到氧化铜，再进行图案化处理并裸露出开口区域，得到黑色矩阵图形；
(2)制作栅：在所述黑色矩阵图形进行栅成膜，然后曝光，得到栅图形；
(3)制作GI：在步骤(2)的成品上进行GI成膜，形成GI薄膜；
(4)制作源漏极：在由GI薄膜覆盖的栅图形上进行源漏极成膜，然后曝光，得到源漏极图形；
(5)制作IGZO：在由GI薄膜覆盖的栅图形上并且在源漏极之间进行IGZO成膜，得到IGZO图形；
(6)制作PV：在步骤(5)的成品上进行PV成膜，穿过PV薄膜在源漏极上制作接触孔；
(7)制作R/G/B：在步骤(6)的成品上进行R/G/B涂布，留出所述接触孔，并曝光得到所需图形；
(8)制作ITO：覆盖接触孔以及所述开口区域进行ITO成膜，然后曝光，得到ITO图形。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(1)中，是通过物理气相沉积进行铜成膜。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(2)中， 是通过物理气相沉积进行栅成膜，然后曝光，再通过干法刻蚀得到栅图形，所述栅图形的材料为铜。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(3)中，是通过化学气相沉积进行GI成膜，所述GI薄膜的材料为二氧化硅。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(4)中，是通过物理气相沉积进行源漏极成膜，然后曝光，再通过湿法刻蚀得到源漏极图形，所述源漏极图形的材料为铜。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(5)中，是通过物理气相沉积进行金属氧化物IGZO成膜，然后曝光，再通过湿法刻蚀得到IGZO图形。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(6)中，是通过化学气相沉积进行PV成膜，PV的材料为SiO2。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(8)中，是通过物理气相沉积进行ITO成膜，然后曝光，再通过湿法刻蚀得到ITO图形。
本发明还提供一种基于IGZO-TFT的BOA液晶面板的结构，其包括基板，所述基板上具有黑色矩阵图形，并且所述黑色矩阵图形将开口区域裸露出来，所述黑色矩阵图形上具有栅图形，所述基板、黑色矩阵图形以及栅图形上具有GI薄膜，在由GI薄膜覆盖的栅图形上具有源漏极，并且在由GI薄膜覆盖的栅图形上以及源漏极之间具有IGZO薄膜，在所述源漏极、IGZO薄膜以及GI薄膜上具有PV薄膜，并且PV薄膜在对应源漏极处具有接触孔，在PV薄膜上除接触孔外具有R/G/B涂布层，覆盖接触孔以及所述开口区域具有ITO图形。
所述的基于IGZO-TFT的BOA液晶面板的结构，其中，所述黑色矩阵图形由氧化铜形成。
本发明的有益效果是：本发明针对现有BOA结构黑色矩阵(BM)难制作和IGZO-TFT中BCE结构中IGZO被刻蚀的难点，提出了用氧化铜做黑色矩阵的共平面结构的IGZO-TFT的BOA器件，有效的解决了问题。此外，本发明采用底栅底接触的结构，制作即先做源漏极，再做IGZO，这样有效的避免IGZO被刻蚀的风险。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1是制作BM图形的示意图；
图2是制作Gate图形的示意图；
图3是制作GI薄膜的示意图；
图4是制作源漏极的示意图；
图5是制作IGZO图形的示意图；
图6是制作PV薄膜的示意图；
图7是制作R/G/B的示意图；
图8是制作ITO图形的示意图。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
下面将结合附图对本发明作进一步说明。
本发明提供一种基于IGZO-TFT的BOA液晶面板的制作方法，其具有如下步骤：
(1)制作黑色矩阵(BM)：
如图1所示，首先，在基板1上通过物理气相沉积(Physical Vapor Deposition，PVD)进行铜(Cu)成膜，然后进行氧等离子体(O2plasma)处理，得到氧化铜(CuO)，即利用氧化铜(CuO)做BM的遮挡层，进行图案化处理，并且裸露出开口区域3。然后进行曝光，湿法刻蚀得到BM图形2。需要强调的是，BM图形仅仅裸露出开口区域3。
(2)制作栅(Gate)：
如图2所示，在BM图形2上通过物理气相沉积(PVD)进行Gate成膜，然后曝光，干法刻蚀得到Gate图形4。优选地，Gate图形4的材料优选为铜(Cu)。
(3)制作GI：
如图3所示，在整体上通过化学气相沉积(Chemical Vapor Deposition，CVD)进行GI成膜。优选地，GI薄膜5的材料优选为二氧化硅(SiO2)。
(4)制作源漏极：
如图4所示，在由GI薄膜5覆盖的Gate图形4上通过物理气相沉积(PVD)进行源漏极成膜，然后曝光，湿法刻蚀得到源漏极图形。优选地，源漏极6的材 料优选为铜(Cu)。
(5)制作金属氧化物：
如图5所示，在由GI薄膜5覆盖的Gate图形4上、源漏极之间通过物理气相沉积(PVD)进行金属氧化物(IGZO)成膜，然后曝光，湿法刻蚀得到金属氧化物(IGZO)图形7。
(6)制作PV：
如图6所示，在整体上通过化学气相沉积(CVD)进行PV成膜，穿过PV薄膜8在源漏极6上通过干刻蚀得到像素(Pixel)的接触孔9。优选地，PV材料优选为SiO2。
(7)制作R/G/B：
如图7所示，在整体上进行R/G/B 10涂布，留出所述接触孔9，并曝光得到所需图形。
(8)制作ITO：
如图8所示，覆盖接触孔9以及所述开口区域3、通过物理气相沉积(PVD)进行ITO成膜，然后曝光，湿法刻蚀得到ITO图形11。
此外，本发明还提供一种基于IGZO-TFT的BOA液晶面板的结构，如图8所示，其主要包括基板1，基板1上具有BM图形2，并且所述BM图形2将开口区域3裸露出来，所述BM图形2上具有Gate图形4，所述基板1、BM图形2以及Gate图形4上具有GI薄膜5，在由GI薄膜5覆盖的Gate图形4上具有源漏极6，在由GI薄膜5覆盖的Gate图形4上、源漏极6之间具有IGZO薄膜7，在整体上具有PV薄膜8，并且PV薄膜8在对应源漏极6处具有接触孔9，在整体上进行R/G/B 10涂布，留出所述接触孔9，覆盖接触孔9以及所述开口区域3具有ITO图形11。
综上所述，本发明的有益效果是：
本发明针对现有BOA结构BM难制作和IGZO-TFT中BCE结构中IGZO被刻蚀的难点，提出了用CuO做BM的共平面结构(Coplanar Structrue)的IGZO-TFT的BOA器件，有效的解决了问题。此外，本发明采用底栅底接触的结构(coplanar)，制作即先做源漏极，再做IGZO，这样有效的避免IGZO被刻蚀的风险。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只 要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (10)

  1. 一种基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，具有如下步骤：
    (1)制作黑色矩阵：在基板上进行铜成膜，然后经过氧化处理得到氧化铜，再进行图案化处理并裸露出开口区域，得到黑色矩阵图形；
    (2)制作栅：在所述黑色矩阵图形进行栅成膜，然后曝光，得到栅图形；
    (3)制作GI：在步骤(2)的成品上进行GI成膜，形成GI薄膜；
    (4)制作源漏极：在由GI薄膜覆盖的栅图形上进行源漏极成膜，然后曝光，得到源漏极图形；
    (5)制作IGZO：在由GI薄膜覆盖的栅图形上并且在源漏极之间进行IGZO成膜，得到IGZO图形；
    (6)制作PV：在步骤(5)的成品上进行PV成膜，穿过PV薄膜在源漏极上制作接触孔；
    (7)制作R/G/B：在步骤(6)的成品上进行R/G/B涂布，留出所述接触孔，并曝光得到所需图形；
    (8)制作ITO：覆盖接触孔以及所述开口区域进行ITO成膜，然后曝光，得到ITO图形。
  2. 根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(1)中，是通过物理气相沉积进行铜成膜。
  3. 根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(2)中，是通过物理气相沉积进行栅成膜，然后曝光，再通过干法刻蚀得到栅图形，所述栅图形的材料为铜。
  4. 根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(3)中，是通过化学气相沉积进行GI成膜，所述GI薄膜的材料为二氧化硅。
  5. 根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(4)中，是通过物理气相沉积进行源漏极成膜，然后曝光，再通过湿法刻蚀得到源漏极图形，所述源漏极图形的材料为铜。
  6. 根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其 特征在于，在步骤(5)中，是通过物理气相沉积进行金属氧化物IGZO成膜，然后曝光，再通过湿法刻蚀得到IGZO图形。
  7. 根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(6)中，是通过化学气相沉积进行PV成膜，PV的材料为SiO2。
  8. 根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(8)中，是通过物理气相沉积进行ITO成膜，然后曝光，再通过湿法刻蚀得到ITO图形。
  9. 一种基于IGZO-TFT的BOA液晶面板的结构，其特征在于，包括基板，所述基板上具有黑色矩阵图形，并且所述黑色矩阵图形将开口区域裸露出来，所述黑色矩阵图形上具有栅图形，所述基板、黑色矩阵图形以及栅图形上具有GI薄膜，在由GI薄膜覆盖的栅图形上具有源漏极，并且在由GI薄膜覆盖的栅图形上以及源漏极之间具有IGZO薄膜，在所述源漏极、IGZO薄膜以及GI薄膜上具有PV薄膜，并且PV薄膜在对应源漏极处具有接触孔，在PV薄膜上除接触孔外具有R/G/B涂布层，覆盖接触孔以及所述开口区域具有ITO图形。
  10. 根据权利要求9所述的基于IGZO-TFT的BOA液晶面板的结构，其特征在于，所述黑色矩阵图形由氧化铜形成。
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