WO2018040294A1 - 一种薄膜封装结构及有机发光二极管器件 - Google Patents

一种薄膜封装结构及有机发光二极管器件 Download PDF

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WO2018040294A1
WO2018040294A1 PCT/CN2016/105889 CN2016105889W WO2018040294A1 WO 2018040294 A1 WO2018040294 A1 WO 2018040294A1 CN 2016105889 W CN2016105889 W CN 2016105889W WO 2018040294 A1 WO2018040294 A1 WO 2018040294A1
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layer
light emitting
material film
thin film
emitting diode
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French (fr)
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彭其明
曾维静
李文杰
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
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    • H10K50/81—Anodes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
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    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

Definitions

  • OLED Organic Light-Emitting Diode
  • CRT cathode ray tube
  • the OLED has an anode, an organic light-emitting layer, and a cathode which are sequentially formed on a substrate.
  • the biggest problem that restricts the development of the OLED industry and the biggest drawback of OLEDs is that the lifetime of OLEDs is short, and the reason why the lifetime of OLEDs is short is mainly due to the electrodes of the OLED devices and the organic materials of the luminescent layer for the pollutants, water vapor, and oxygen in the atmosphere. Very sensitive, it is prone to electrochemical corrosion in the environment containing water vapor and oxygen, causing damage to OLED devices. Therefore, the OLED must be effectively encapsulated to prevent moisture and oxygen from entering the OLED.
  • the OLED package mainly includes the following methods: desiccant package, UV glue package (also known as Dam only package), UV glue and filler package (also known as Dam&Fill package), glass glue package (also known as Frit package).
  • UV adhesive packaging technology is the earliest and most commonly used technology of OLED packaging. It has the following characteristics: no solvent or a small amount of solvent, which reduces the environmental pollution of solvent; low energy consumption, low temperature curing, suitable for UV sensitivity
  • the material has a fast curing speed and high efficiency, and can be used in a high-speed production line, and the curing equipment has a small footprint.
  • the sealant used in the UV adhesive package is an organic material, which has a large molecular gap after curing, and adopts a conventional OLED packaging method because the sealant has curing defects, porosity, and weak adhesion to the substrate and the package cover. For other reasons, water vapor and oxygen are more likely to penetrate into the inner sealing region through the gap, resulting in faster degradation of the performance of the OLED device and shortened life.
  • the internal sealing of the OLED device is ensured, and the contact between the OLED device and the external environment in oxygen and water vapor is minimized, which is essential for the stable performance of the OLED device and prolonging the service life of the OLED.
  • Thin-film encapsulation technology is particularly suitable for special applications that are not possible with traditional capping packages, such as packaging for flexible organic light-emitting diodes (OLEDs) and flexible organic solar cells.
  • the industry's main method of improving thin film encapsulation technology is to use a dry sheet or to maximize the water-oxygen barrier capability of the thin film encapsulation layer, such as depositing a multi-layer organic-inorganic composite film after the display device is fabricated to prolong the diffusion path of water and oxygen in the film.
  • this technology still has inherent limitations. Because even if the multilayer film is alternately deposited, there is no guarantee that there is no pinhole at all, and the position of the pores is often the way of water vapor infiltration, which may cause damage or failure of the device.
  • Low-temperature atomic layer deposition is also used in the industry to obtain a film with very few pores. This technology can block water and oxygen, but it does not completely block water vapor.
  • the package film can be used to protect diodes or devices that are sensitive to external factors such as moisture or oxygen.
  • Packaging film The diode or device that can be protected may include, for example, an organic electronic device, a solar cell, or a secondary battery such as a secondary lithium battery. Among these diodes or devices, organic electronic devices are particularly susceptible to external factors such as moisture or oxygen.
  • TTA triplet-triplet annihilation
  • the present application proposes a thin film package structure and an organic light emitting diode device.
  • a thin film package structure comprising:
  • At least two layers of organic material film At least two layers of organic material film
  • At least two layers of inorganic material film At least two layers of inorganic material film
  • the inorganic material film layer includes a magnetic material film layer and a non-magnetic inorganic material film layer.
  • the number of layers of the organic material film layer is 2 to 5 layers.
  • the number of layers of the inorganic material film layer is 2 to 5 layers;
  • the material of the magnetic material film layer is one or several of Ni, Co, Fe, Mn, Bi, FeO-Fe 2 O 3 , NiO-Fe 2 O 3 , MnBi, MnO-Fe 2 O 3 and NdFeB. The combination.
  • the magnetic material film layer is prepared by magnetron sputtering or electron beam evaporation.
  • the material of the non-magnetic inorganic material film layer is one or a combination of several of alumina, zinc oxide, titanium oxide, silicon oxide, silicon nitride, and zirconium oxide.
  • the material of the organic material film layer is PP-HMDSO/SiCN, polyvinyl alcohol, urethane acrylate One or a combination of several of the polymer and the polyimide resin.
  • the organic material film layer has a thickness of 500 to 5000 nm.
  • the surface tension of the thin film encapsulation structure gradually increases from the inside to the outside.
  • an organic light emitting diode device comprising:
  • An organic light emitting diode device formed on a substrate.
  • the substrate is a glass substrate, and a thin film transistor array and a color filter film are disposed in the glass substrate.
  • the OLED device includes an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a cathode, and a charge generation layer;
  • the anode is a transparent ITO conductive film
  • the transparent ITO conductive film is deposited by a sputtering process
  • the luminescent layer is 1 to 3, and at least one of the luminescent layers has a triplet-triplet quenching effect;
  • the luminescent layer is two, respectively a yellow light emitting layer and a blue light emitting layer, wherein the blue light emitting layer has a triplet-triplet quenching effect;
  • the blue light emitting layer is specifically composed of MADN having a mass ratio of 95% and TBPe having a mass ratio of 5%; the molecular structure of the MADN is as follows:
  • the molecular structure of the TBPe is as follows:
  • the hole transport layer is two, which are a first hole transport layer and a second hole transport layer, respectively.
  • the number of the electron transport layers is two, which are a first electron transport layer and a second electron transport layer, respectively.
  • the organic light emitting diode device specifically includes:
  • the hole injection layer is prepared by vacuum evaporation
  • the hole injection layer is CuPc, TNATA or PEDOT.
  • the first hole transport layer is prepared by vacuum evaporation
  • the material of the first hole transporting layer is a pair of coupled diamine compound, triphenylamine compound, triarylamine polymer or carbazole compound.
  • the blue light emitting layer is prepared by vacuum evaporation.
  • the first electron transport layer is prepared by vacuum evaporation
  • the first electron transport layer is an oxazole derivative, a metal chelate quinoline derivative, a porphyrin derivative, a diazonium derivative, a phenanthroline derivative or a silicon-containing heterocyclic compound.
  • the charge generation layer was prepared by vacuum evaporation.
  • the second hole transport layer is prepared by vacuum evaporation
  • the material of the second hole transporting layer is a pair of coupled diamine compounds, a triphenylamine compound, a triarylamine polymer or a carbazole compound.
  • the yellow light emitting layer is prepared by vacuum evaporation.
  • the second electron transport layer is prepared by vacuum evaporation
  • the first electron transport layer is an oxazole derivative, a metal chelate quinoline derivative, a porphyrin derivative, a diazonium derivative, a phenanthroline derivative or a silicon-containing heterocyclic compound.
  • the electron injecting layer is prepared by vacuum evaporation
  • the electron injecting layer may be lithium oxide, lithium borate, potassium silicate, cesium carbonate or an alkali metal fluoride.
  • the cathode is prepared by vacuum evaporation
  • the cathode is lithium, magnesium, aluminum, magnesium silver alloy or lithium aluminum alloy.
  • a gradient tension gradient between the layers of the film can drive the water vapor inside the film to be excluded from the body, and can prevent the infiltration of moisture in the body, thereby making up the pores inside the film, improving the encapsulation effect, and protecting the being Package the device.
  • the OLED device is packaged by using the thin film encapsulation structure of the invention.
  • the magnetic field generated by the magnetic material layer in the encapsulation film acts on the OLED to improve the light extraction efficiency of the display; on the other hand, the thin film encapsulation structure can be effective.
  • the external oxygen and water are prevented from infiltrating into the OLED display to satisfy the packaging performance of the organic light emitting display device.
  • the package structure and process described in this embodiment can be applied to the package of the flexible OLED display device.
  • FIG. 1 shows a schematic structural view of a conventional organic light emitting diode device
  • FIG. 2 is a schematic structural view of a thin film encapsulation structure according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic structural view of an organic light emitting diode device according to Embodiment 2 of the present invention.
  • FIG. 4 is a schematic view showing the structure after the package is completed in Embodiment 3 of the present invention.
  • a thin film encapsulation structure of Embodiment 1 of the present invention includes:
  • a second inorganic material film layer 305 is formed on the second organic material film layer 304.
  • the first inorganic material film layer 301 is made of silicon nitride and has a thickness of 200 to 2000 nm;
  • the first organic material film layer 302 is made of PP-HMDSO/SiCN and has a thickness of 500-5000 nm;
  • the magnetic material film layer 303 the NdFeB, having a thickness of 200 to 2000 nm;
  • the second organic material film layer 304 is made of PP-HMDSO/SiCN and has a thickness of 500-5000 nm;
  • the material of the second inorganic material film layer 305 is silicon nitride and has a thickness of 200 to 2000 nm.
  • the surface tension of the thin film encapsulation structure is gradually increased from the first inorganic material film layer 301 to the second inorganic material film layer 305.
  • the gradual tension gradient between the layers of the film can drive the water vapor inside the film to be excluded from the body, and can prevent the infiltration of moisture in the body, thereby making up the pores inside the film, improving the packaging effect, and protecting.
  • Packaged device Since the moving direction of water vapor is transported from a low surface tension to a high surface tension, when water vapor is present inside the thin film encapsulation layer, the water vapor will be pulled from the tension. The low end transports to the high end of the tension, forming a tendency to drain out of the body.
  • the package structure also prevents infiltration of moisture in the body, thereby making up for the pores inside the film and improving the packaging effect to protect the device under the film encapsulation layer.
  • An embodiment of the present invention further provides an organic light emitting diode device, including:
  • An organic light emitting diode device formed on a substrate.
  • the substrate is a glass substrate 100 in which a thin film transistor array and a color filter film are disposed.
  • the anode adopts ITO with good electrical conductivity, good chemical and morphological stability, high work function, and high transparency in the visible light region; and the anode can be combined with some surface treatment (such as O2 plasma or UV- Ozone treatment) to improve its work function.
  • some surface treatment such as O2 plasma or UV- Ozone treatment
  • the hole injection layer 202 is prepared by vacuum evaporation
  • the hole injection layer 202 used requires a good matching degree with the anode and the adjacent hole transport layer.
  • the hole injection layer is a P-type doped structure, and the hole transport material is doped with an oxidant such as SbCl5, FeCl3, iodine, F4-TCNQ or TBAHA. Any other structure that can improve hole injection, such as a quantum well structure, can also be used.
  • the first hole transport layer 203 is prepared by vacuum evaporation
  • the first hole transport layer 203 is PTDATA. It has high thermal stability and can be vacuum vapor-deposited to form a pinhole-free film.
  • the first electron transport layer 205 is an oxazole derivative having high electron mobility, high glass transition temperature and thermal stability, and a uniform, microporous film can be formed via thermal evaporation.
  • the charge generation layer 206 is prepared by vacuum evaporation.
  • the second hole transport layer 207 is prepared by vacuum evaporation
  • the first hole transport layer 203 is PTDATA; the hole transport rate of the second hole transport layer 207 is better than or equal to the hole mobility of the first hole transport layer 203; the first hole transport layer 203 The thickness is greater than the thickness of the second hole transport layer 207.
  • the first hole transport layer 203 carries a large number of carriers to prevent carriers from accumulating at the interface; the second hole transport layer 207 rapidly transfers carriers and performs energy level matching, and limits excitons of the emission layer to light emission.
  • the area thereby achieving the purpose of improving the efficiency of the OLED device, while further extending the lifetime of the OLED device.
  • the yellow light emitting layer 208 is prepared by vacuum evaporation.
  • the second electron transport layer 209 is an oxazole derivative having high electron mobility, high glass transition temperature and thermal stability, and a uniform, microporous film can be formed via thermal evaporation.
  • the electron injection layer 210 is prepared by vacuum evaporation
  • the electron injection layer 210 is potassium oxychloride.
  • the cathode 211 is prepared by vacuum evaporation
  • the cathode 211 is a low work function metal or metal alloy, specifically lithium.
  • the transparent ITO conductive film 201 is deposited by a sputtering process
  • the blue light emitting layer 204 has a triplet-triplet quenching effect; the blue light emitting layer 204 is specifically composed of a MADN having a mass ratio of 95% and a TBPe having a mass ratio of 5%; the molecular structure of the MADN is as follows:
  • the molecular structure of the TBPe is as follows:
  • the cleaning of the glass substrate 100 is first performed by an initial clean process, the cleanliness is in accordance with particles ⁇ 300 ea (particle size ⁇ 1 ⁇ m), and the thickness of the glass substrate 100 may be 0.3 mm to 0.7 mm. In order to prevent harmful substances in the glass substrate 100.
  • the embodiment of the present invention further provides a method for packaging the organic light emitting diode device of Embodiment 2 by using the thin film package structure of Embodiment 1, which includes:
  • a second inorganic material film layer 30 is prepared on the second organic material film layer 304 by a PECVD process.
  • the first inorganic material film layer 301 is made of silicon nitride and has a thickness of 200 to 2000 nm;
  • the first organic material film layer 302 is made of PP-HMDSO/SiCN and has a thickness of 500-5000 nm;
  • the magnetic material film layer 303 the NdFeB, having a thickness of 200 to 2000 nm;
  • the second organic material film layer 304 is made of PP-HMDSO/SiCN and has a thickness of 500-5000 nm;
  • the material of the second inorganic material film layer 305 is silicon nitride and has a thickness of 200 to 2000 nm.
  • the surface tension of the thin film encapsulation structure is gradually increased from the first inorganic material film layer 301 to the second inorganic material film layer 305.
  • the magnetic field generated by the magnetic material film layer 303 has a size of 5 to 500 mT at the OLED.
  • the packaging of the organic light emitting diode device is completed by the above steps.
  • the OLED device is packaged by using the thin film encapsulation structure described in this embodiment.
  • the magnetic field generated by the magnetic material layer in the encapsulation film acts on the OLED to improve the light extraction efficiency of the display;
  • the thin film encapsulation structure can Effectively prevent external oxygen and water from penetrating into the OLED display, satisfying the packaging performance of the organic light emitting display device.
  • the package structure and process described in this embodiment can be applied to the package of the flexible OLED display device.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种薄膜封装结构及有机发光二极管器件。解决现有OLED薄膜封装中OLED显示器的出光效率低，封装效果差的问题。薄膜封装结构包括至少两层有机材料膜层（302，304）；至少两层无机材料膜层（301，303，305）；单层的有机材料膜层和单层的无机材料膜层交替设置；无机材料膜层包括磁性材料膜层（303）和非磁性无机材料膜层（301，305）。薄膜封装结构封装的带基板（100）的有机发光二极管器件包括基板；形成于基板上的有机发光二极管器件。可以通过封装薄膜中磁性材料层产生的磁场作用于OLED，提高显示器的出光效率；另一方面这种薄膜封装结构可以有效阻止外部氧气和水渗入OLED显示器内，满足有机发光显示器件的封装性能。

Description

一种薄膜封装结构及有机发光二极管器件
相关申请的交叉引用
本申请要求享有于2016年08月31日提交的名称为“一种薄膜封装结构及有机发光二极管器件”的中国专利申请CN2016107976080的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及平板显示技术领域，尤其涉及一种薄膜封装结构及有机发光二极管器件。
背景技术
在显示技术领域，液晶显示器(LCD，Liquid Crystal Display)、有机发光二极管(OLED，Organic Light-Emitting Diode)显示器等平板显示技术已经逐步取代阴极射线显像管(CRT，Cathode Ray Tube)显示器。其中，OLED具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，而被广泛应用在手机屏幕、电脑显示器、全彩电视等，被业界公认为是最有发展潜力的显示装置。
美国Kodak公司在1987年的专利US4769292中首次提出“三明治”式的有机电致发光器件结构，引起了全球的关注；两年后，依旧是美国Kodak公司在专利US4885211中首次引入空穴传输层，揭示了OLED器件设计的关键所在，从此揭开了OLED的研究热潮。由于OLED具有自发光、全固态、宽视角、响应快等诸多优点而被认为在平板显示中有着巨大的应用前景，甚至被认为是继液晶(LCD)、等离子(PDP)之后的新一代平板显示产品和技术。为了避免发光中心偏向电极使器件发光淬灭，在简单的“三明治”式器件结构的基础上又引入了载流子注入层和传输层，并逐渐形成了目前较为常见的多层OLED器件结构。如附图1所示，基板1、置于基板1上的ITO透明阳极2、置于ITO透明阳极上的2注入层(HIL)3、置于空穴注入层3上的空穴传输层4、置于空穴传输层4上的发光层5、置于发光层5上的电子传输层6、置于电子传输层6上的电子注入层7以及置于电子注 入层7上的阴极8。为了提高器件的效率，发光层通常采用主/客体掺杂系统。
OLED具有依次形成于基板上的阳极、有机发光层和阴极。制约OLED产业发展的最大问题与OLED的最大缺陷是OLED的寿命较短，造成OLED寿命较短的原因主要是构成OLED器件的电极和发光层有机材料对于大气中的污染物、水汽、以及氧气都非常敏感，在含有水汽、氧气的环境中容易发生电化学腐蚀，对OLED器件造成损害。因此，必须对OLED进行有效封装，阻止水汽、氧气进入OLED内部。
OLED封装主要包括以下几种方式：干燥剂封装、UV胶封装(又称Dam only封装)、UV胶和填充胶封装(又称Dam&Fill封装)、玻璃胶封装(又称Frit封装)等。其中，UV胶封装技术是OLED封装最早也是最常用的技术，其具有如下特点：不使用溶剂或使用少量溶剂，减少了溶剂对环境的污染；耗能少，可低温固化，适用于对UV敏感的材料；固化速度快，效率高，可在高速生产线上使用，固化设备占地面积小等。但是，UV胶封装中所使用的密封胶是有机材料，其固化后分子间隙较大，采用传统的OLED封装方法，由于密封胶具有固化缺陷、多孔性、与基板、封装盖板的结合力弱等原因，水汽与氧气比较容易透过间隙渗透入内部密封区域，从而导致OLED器件的性能较快退化，寿命缩短。
因此，通过对OLED进行有效封装，保证OLED器件内部良好的密封性，尽可能的减少OLED器件与外部环境中氧气、水汽的接触，对于OLED器件的性能稳定及延长OLED的使用寿命至关重要。要达到更好的封装效果仍需进一步对现有的封装结构及封装方法进行改进，以阻隔水汽与氧气渗入OLED封装结构内部的路径。
薄膜封装技术特别适用于传统加盖封装所无法实现的一些特殊场合，如对柔性有机发光二极管(OLED)和柔性有机太阳能电池等的封装。业界提升薄膜封装技术的主要方法是使用干燥片或尽量增加薄膜封装层的水氧阻隔能力，比如在显示器件制作完毕之后沉积多层有机-无机复合薄膜以延长水氧在薄膜中扩散的路径，然而，该项技术仍然存在固有的局限。因为即使交替沉积的多层薄膜也不能保证完全没有孔隙(pinhole),而存在孔隙的位置往往是水汽渗入的途径，这样便会造成器件的损坏或者失效。业界也有采用低温原子层沉积(ALD)以得到孔隙极少的薄膜，该技术可以阻挡水氧气，但是也并不能完全阻挡水汽。封装薄膜可以用于保护对外部因素如水分或氧气敏感的二极管或者器件。通过封装薄膜 能够保护的二极管或器件可以包括，例如有机电子器件、太阳能电池或者二次电池如二次锂电池。在这些二极管或器件中，尤其易受外部因素如水分或氧气影响的是有机电子器件。
由于当前蓝色磷光OLED的寿命不足以满足应用需求，人们转而采用具有三线态-三线态湮灭(triplet-triplet annihilation，TTA)效应的荧光材料作为蓝光OLED的发光材料。这是因为TTA可以使两个三线态激子湮灭形成一个单线态激子，从而提高器件的发光效率。理论上，采用具有TTA特征的发光材料的OLED内量子效率可以达到40％～62.5％。
研究表明，适当大小的磁场可以增加器件中TTA产生单线态激子的概率，并且它并不会减弱磷光材料的发光强度。一个貌似可行的办法是将磁性材料直接应用于OLED中，然而由于磁性材料的导电性不佳，这种想法并不具有现实意义。
发明内容
针对上述现有技术中的问题，本申请提出了一种薄膜封装结构及有机发光二极管器件。
根据本发明的第一个方面，提供了一种薄膜封装结构，包括：
至少两层有机材料膜层；
至少两层无机材料膜层；
单层的有机材料膜层和单层的无机材料膜层交替设置；
所述无机材料膜层包括磁性材料膜层和非磁性无机材料膜层。
所述有机材料膜层的层数为2～5层。
所述无机材料膜层的层数为2～5层；
优选的是，所述无机材料膜层中磁性材料膜层的层数为1层。
所述磁性材料膜层的材质为Ni、Co、Fe、Mn、Bi、FeO-Fe2O3、NiO-Fe2O3、MnBi、MnO-Fe2O3和NdFeB中一种或其中几种的组合。
所述磁性材料膜层采用磁控溅射或电子束蒸发工艺制备而成。
所述磁性材料膜层的厚度为200～2000nm。
所述非磁性无机材料膜层的材质为氧化铝、氧化锌、氧化钛、氧化硅、氮化硅和氧化锆中的一种或其中几种的组合。
所述有机材料膜层的材料为PP-HMDSO/SiCN、聚乙烯醇、聚氨酯丙烯酸酯 聚合物和聚酰亚胺树脂中的一种或其中几种的组合。
所述有机材料膜层采用涂覆、喷墨印刷或PECVD工艺制成。
所述有机材料膜层的厚度为500～5000nm。
所述薄膜封装结构的表面张力由内向外逐渐增加。
根据本发明的第二个方面，提供了一种有机发光二极管器件，包括：
基板；
形成于基板上的有机发光二极管器件。
所述基板为玻璃基板、陶瓷基板或柔性材料基板；
优选的是，所述基板为玻璃基板，所述玻璃基板内设置有薄膜晶体管阵列和色滤光膜。
所述OLED器件包括阳极、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、阴极和电荷生成层；
优选的是，所述阳极为透明ITO导电膜；
优选的是，所述透明ITO导电膜采用溅射工艺沉积而成；
优选的是，所述发光层为1～3个其中至少一个发光层具有三线态-三线态湮灭效应；
优选的是，所述发光层为2个，分别为黄光发光层和蓝光发光层，其中蓝光发光层具有三线态-三线态湮灭效应；
优选的是，所述蓝光发光层具体由质量比为95％的MADN和质量比为5％的TBPe掺杂构成；所述MADN的分子结构式如下：
Figure PCTCN2016105889-appb-000001
所述TBPe的分子结构式如下：
Figure PCTCN2016105889-appb-000002
所述空穴传输层为2个，分别为第一空穴传输层和第二空穴传输层。
所述电子传输层为2个，分别为第一电子传输层和第二电子传输层。
所述有机发光二极管器件具体包括：
玻璃基板；
透明ITO导电膜，其形成在所述玻璃基板上；
空穴注入层，其形成在所述透明ITO导电膜上；
第一空穴传输层，其形成在所述空穴注入层上；
蓝光发光层，其形成在所述第一空穴传输层上；
第一电子传输层，其形成在所述蓝光发光层上；
电荷生成层，其形成在所述第一电子传输层上；
第二空穴传输层，其形成在所述电荷生成层上；
黄光发光层，其形成在所述第二空穴传输层上；
第二电子传输层，其形成在所述黄光发光层上；
电子注入层，其形成在所述第二电子传输层上；
阴极，其形成在所述电子注入层上。
所述空穴注入层是通过真空蒸镀的方式制备的；
所述空穴注入层为CuPc、TNATA或PEDOT。
所述第一空穴传输层是通过真空蒸镀的方式制备的；
第一空穴传输层的材质为成对偶联的二胺类化合物、三苯胺化合物、三芳胺聚合物或咔唑类化合物。
所述蓝光发光层是通过真空蒸镀的方式制备的。
所述第一电子传输层是通过真空蒸镀的方式制备的；
所述第一电子传输层为噁唑衍生物、金属螯合物喹啉衍生物、喔啉衍生物、二氮蒽衍生物、二氮菲衍生物或含硅的杂环化合物。
所述电荷生成层是通过真空蒸镀的方式制备的。
所述第二空穴传输层是通过真空蒸镀的方式制备的；
所述第二空穴传输层的材质为成对偶联的二胺类化合物、三苯胺化合物、三芳胺聚合物或咔唑类化合物。
所述黄光发光层是通过真空蒸镀的方式制备的。
所述第二电子传输层是通过真空蒸镀的方式制备的；
所述第一电子传输层为噁唑衍生物、金属螯合物喹啉衍生物、喔啉衍生物、二氮蒽衍生物、二氮菲衍生物或含硅的杂环化合物。
所述电子注入层是通过真空蒸镀的方式制备的；
所述电子注入层可以为氧化锂、氧化锂硼、硅氧化钾、碳酸铯或碱金属氟化物。
所述阴极是通过真空蒸镀的方式制备；
所述阴极为锂、镁、铝、镁银合金或锂铝合金。
所述的真空蒸镀的蒸镀速率应控制在1埃/s～10埃/s。
与现有技术相比，本发明可以具有如下优点或有益效果：
本发明的薄膜封装结构中，各层薄膜之间具有渐变的张力梯度，可以驱使薄膜内部的水汽排除体外，并且可以防止体外水汽的渗入，从而能够弥补薄膜内部的孔隙，提高封装效果，保护被封装器件。采用本发明所述的薄膜封装结构对有机发光二极管器件进行封装，一方面可以通过封装薄膜中磁性材料层产生的磁场作用于OLED，提高显示器的出光效率；另一方面这种薄膜封装结构可以有效阻止外部氧气和水渗入OLED显示器内，满足有机发光显示器件的封装性能。同时本实施例所述的封装结构及工艺可以应用于柔性OLED显示器件的封装。
上述技术特征可以各种适合的方式组合或由等效的技术特征来替代，只要能够达到本发明的目的。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1显示了现有有机发光二极管器件的结构示意图；
图2显示了本发明实施例1的薄膜封装结构的结构示意图；
图3显示了本发明实施例2中有机发光二极管器件的结构示意图；
图4显示了本发明实施例3中完成封装后的结构示意图。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
实施例1
图2显示了本发明实施例1薄膜封装结构的结构示意图。如图2所示，本实施例的一种薄膜封装结构，包括：
第一无机材料膜层301；
第一有机材料膜层302，其形成在第一无机材料膜层301上；
磁性材料膜层303，其形成在第一有机材料膜层302上；
第二有机材料膜层304，其形成在磁性材料膜层303上；
第二无机材料膜层305，其形成在第二有机材料膜层304上。
所述第一无机材料膜层301的材质为氮化硅，厚度为200～2000nm；
所述第一有机材料膜层302的材质为PP-HMDSO/SiCN，厚度为500～5000nm；
所述磁性材料膜层303所述NdFeB，厚度为200～2000nm；
所述第二有机材料膜层304的材质为PP-HMDSO/SiCN，厚度为500～5000nm；
所述第二无机材料膜层305的材质为氮化硅，厚度为200～2000nm。
所述薄膜封装结构的表面张力由第一无机材料膜层301向第二无机材料膜层305逐渐增加。
本实施例的薄膜封装结构中，各层薄膜之间具有渐变的张力梯度，可以驱使薄膜内部的水汽排除体外，并且可以防止体外水汽的渗入，从而能够弥补薄膜内部的孔隙，提高封装效果，保护被封装器件。由于水汽的移动方向是从低表面张力向高表面张力方向输运，因此，当薄膜封装层内部存在水汽时，水汽将从张力 低端向张力高端输运，形成会有排出体内的趋势。该封装结构还可以防止体外水汽的渗入，从而能够弥补薄膜内部的孔隙，提高封装效果，以保护薄膜封装层下的器件。
实施例2
本发明实施例还提供了一种有机发光二极管器件，包括：
基板；
形成于基板上的有机发光二极管器件。
所述基板为玻璃基板100，所述玻璃基板100内设置有薄膜晶体管阵列和色滤光膜。
所述有机发光二极管器件具体包括：
玻璃基板100；
透明ITO导电膜201，其形成在所述玻璃基板100上；
空穴注入层202，其形成在所述透明ITO导电膜201上；
第一空穴传输层203，其形成在所述空穴注入层202上；
蓝光发光层204，其形成在所述第一空穴传输层203上；
第一电子传输层205，其形成在所述蓝光发光层204上；
电荷生成层206，其形成在所述第一电子传输层205上；
第二空穴传输层207，其形成在所述电荷生成层206上；
黄光发光层208，其形成在所述第二空穴传输层207上；
第二电子传输层209，其形成在所述黄光发光层208上；
电子注入层210，其形成在所述第二电子传输层209上；
阴极211，其形成在所述电子注入层210上。
所述阳极采用具有良好的导电性、良好的化学及形态的稳定性、较高的功函数、并且在可见光区的透明度高的ITO；且阳极可搭配一些表面处理(如O2等离子体或UV-臭氧处理)来提高其功函数。
所述空穴注入层202是通过真空蒸镀的方式制备的；
采用的空穴注入层202要求与阳极和相邻的空穴传输层的能级匹配度良好。空穴注入层采用P型掺杂结构，将空穴传输材料掺杂氧化剂如SbCl5、FeCl3、碘、F4-TCNQ或TBAHA。还可以采用量子阱结构等其他任何可以提高空穴注入的结构。
所述第一空穴传输层203是通过真空蒸镀的方式制备的；
所述第一空穴传输层203为PTDATA。具有高的热稳定性、能真空蒸镀形成无针孔的薄膜。
所述蓝光发光层204是通过真空蒸镀的方式制备的。
所述第一电子传输层205是通过真空蒸镀的方式制备的；
所述第一电子传输层205为噁唑衍生物，具有较高的电子迁移率、较高的玻璃转变温度和热稳定性、并且可经由热蒸镀形成均匀、无微孔的薄膜。
所述电荷生成层206是通过真空蒸镀的方式制备的。
所述第二空穴传输层207是通过真空蒸镀的方式制备的；
所述第一空穴传输层203为PTDATA；第二空穴传输层207的空穴迁移率优于或等于第一空穴传输层203的空穴迁移率；所述第一空穴传输层203的厚度大于第二空穴传输层207的厚度。
第一空穴传输层203承载大量载流子，避免载流子在界面处累积；第二空穴传输层207快速传递载流子并进行能级匹配，并且将发射层的激子限制在发光区，从而实现提高OLED器件的效率的目的，同时还可进一步延长OLED器件的寿命。
所述黄光发光层208是通过真空蒸镀的方式制备的。
所述第二电子传输层209是通过真空蒸镀的方式制备的；
所述第二电子传输层209为噁唑衍生物，具有较高的电子迁移率、较高的玻璃转变温度和热稳定性、并且可经由热蒸镀形成均匀、无微孔的薄膜。
所述电子注入层210是通过真空蒸镀的方式制备的；
所述电子注入层210为硅氧化钾。
所述阴极211是通过真空蒸镀的方式制备；
所述阴极211为低功函数的金属或金属合金，具体为锂。
所述透明ITO导电膜201采用溅射工艺沉积而成；
所述蓝光发光层204具有三线态-三线态湮灭效应；蓝光发光层204具体由质量比为95％的MADN和质量比为5％的TBPe掺杂构成；所述MADN的分子结构式如下：
Figure PCTCN2016105889-appb-000003
所述TBPe的分子结构式如下：
Figure PCTCN2016105889-appb-000004
本实施例中先通过初始清洁(Initial clean)工艺实现对玻璃基板100的清洗，清洁度要符合粒子≤300ea(粒径≥lμm)，玻璃基板100的厚度可以为0.3mm～0.7mm。为了防止玻璃基板100中有害物质。
实施例3
本发明实施例还提供了一种利用实施例1的薄膜封装结构封装实施例2的有机发光二极管器件的方法，其包括：
在有机发光二极管器件上采用PECVD工艺制备第一层无机材料膜层301；
在第一层无机材料膜层301上采用PECVD工艺制备第一层有机材料膜层302；
在第一层有机材料膜层302上采用磁控溅射工艺制备磁性材料膜层303；
在磁性材料膜层303上采用PECVD工艺制备第二层有机材料膜层304；
在第二层有机材料膜层304上采用PECVD工艺制备第二层无机材料膜层30。
所述第一无机材料膜层301的材质为氮化硅，厚度为200～2000nm；
所述第一有机材料膜层302的材质为PP-HMDSO/SiCN，厚度为500～5000nm；
所述磁性材料膜层303所述NdFeB，厚度为200～2000nm；
所述第二有机材料膜层304的材质为PP-HMDSO/SiCN，厚度为500～5000nm；
所述第二无机材料膜层305的材质为氮化硅，厚度为200～2000nm。
所述薄膜封装结构的表面张力由第一无机材料膜层301向第二无机材料膜层305逐渐增加。
所述磁性材料膜层303产生的磁场在OLED处的大小为5～500mT。
通过以上步骤完成对有机发光二极管器件的封装。
采用本实施例所述的薄膜封装结构对有机发光二极管器件进行封装，一方面可以通过封装薄膜中磁性材料层产生的磁场作用于OLED，提高显示器的出光效率；另一方面这种薄膜封装结构可以有效阻止外部氧气和水渗入OLED显示器内，满足有机发光显示器件的封装性能。同时本实施例所述的封装结构及工艺可以应用于柔性OLED显示器件的封装。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (10)

  1. 一种薄膜封装结构，其中，包括：
    至少两层有机材料膜层；
    至少两层无机材料膜层；
    单层的有机材料膜层和单层的无机材料膜层交替设置；
    所述无机材料膜层包括磁性材料膜层和非磁性无机材料膜层。
  2. 根据权利要求1所述的一种薄膜封装结构，其中，所述磁性材料膜层的材质为Ni、Co、Fe、Mn、Bi、FeO-Fe2O3、NiO-Fe2O3、MnBi、MnO-Fe2O3和NdFeB中一种或其中几种的组合。
  3. 根据权利要求1所述的一种薄膜封装结构，其中，所述磁性材料膜层的厚度为200～2000nm。
  4. 根据权利要求1所述的一种薄膜封装结构，其中，所述有机材料膜层的材料为PP-HMDSO/SiCN、聚乙烯醇、聚氨酯丙烯酸酯聚合物和聚酰亚胺树脂中的一种或其中几种的组合。
  5. 根据权利要求4所述的一种薄膜封装结构，其中，所述有机材料膜层的厚度为500～5000nm。
  6. 一种有机发光二极管器件，其中，所述有机发光二极管器件通过薄膜封装结构封装，且包括：
    基板；
    形成于基板上的有机发光二极管器件。
  7. 根据权利要求6所述的有机发光二极管器件，其中，所述基板为玻璃基板、陶瓷基板或柔性材料基板。
  8. 根据权利要求6所述的有机发光二极管器件，其中，所述有机发光二极管器件具体包括：
    玻璃基板；
    透明ITO导电膜，其形成在所述玻璃基板上；
    空穴注入层，其形成在所述透明ITO导电膜上；
    第一空穴传输层，其形成在所述空穴注入层上；
    蓝光发光层，其形成在所述第一空穴传输层上；
    第一电子传输层，其形成在所述蓝光发光层上；
    电荷生成层，其形成在所述第一电子传输层上；
    第二空穴传输层，其形成在所述电荷生成层上；
    黄光发光层，其形成在所述第二空穴传输层上；
    第二电子传输层，其形成在所述黄光发光层上；
    电子注入层，其形成在所述第二电子传输层上；
    阴极，其形成在所述电子注入层上。
  9. 根据权利要求8所述的有机发光二极管器件，其中，第一空穴传输层的材质为成对偶联的二胺类化合物、三苯胺化合物、三芳胺聚合物或咔唑类化合物。
  10. 根据权利要求8所述的有机发光二极管器件，其中，所述第一电子传输层为噁唑衍生物、金属螯合物喹啉衍生物、喔啉衍生物、二氮蒽衍生物、二氮菲衍生物或含硅的杂环化合物。
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107403829A (zh) 2017-08-07 2017-11-28 京东方科技集团股份有限公司 显示单元及其制备方法、显示面板
CN109427693B (zh) * 2017-08-25 2020-11-13 Tcl科技集团股份有限公司 封装薄膜、电子装置及其制备方法
CN112640145A (zh) * 2018-12-06 2021-04-09 深圳市柔宇科技股份有限公司 有机发光二极管器件及其制备方法、显示面板及显示装置
CN110176479B (zh) * 2019-05-30 2020-09-01 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
CN111129099B (zh) * 2019-12-31 2022-10-18 武汉天马微电子有限公司 显示面板及其制备方法、显示装置
CN111450421A (zh) * 2020-04-10 2020-07-28 北京夏禾科技有限公司 一种可穿戴的光疗装置
CN112687818A (zh) * 2020-12-24 2021-04-20 广东聚华印刷显示技术有限公司 量子点电致发光器件及其制备方法和显示装置
CN117812931B (zh) * 2023-12-27 2025-02-11 惠科股份有限公司 显示面板的制备方法、显示面板以及显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104884528A (zh) * 2012-12-26 2015-09-02 第一毛织株式会社 封装组合物、包含其的阻挡层及包含其的封装装置
CN105591035A (zh) * 2016-02-29 2016-05-18 广州新视界光电科技有限公司 一种杂化白光有机电致发光器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7342356B2 (en) * 2004-09-23 2008-03-11 3M Innovative Properties Company Organic electroluminescent device having protective structure with boron oxide layer and inorganic barrier layer
US20060246811A1 (en) * 2005-04-28 2006-11-02 Eastman Kodak Company Encapsulating emissive portions of an OLED device
US20060250084A1 (en) * 2005-05-04 2006-11-09 Eastman Kodak Company OLED device with improved light output
US7767498B2 (en) * 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US8187718B2 (en) * 2008-04-14 2012-05-29 Fujifilm Corporation Barrier laminate, barrier film substrate and device
CN101577306B (zh) * 2008-05-09 2012-01-04 财团法人工业技术研究院 发光装置
CN101661995A (zh) * 2009-09-29 2010-03-03 吉林大学 一种能够形成自旋极化注入的有机电致发光器件
CN201616434U (zh) * 2009-10-29 2010-10-27 彩虹集团公司 一种有机发光器件的薄膜封装结构
KR20120065049A (ko) * 2010-12-10 2012-06-20 삼성모바일디스플레이주식회사 유기발광 표시장치 및 그 제조 방법
KR101429924B1 (ko) * 2011-12-08 2014-08-14 엘지디스플레이 주식회사 탠덤형 백색 유기 발광 소자
CN103022051B (zh) * 2012-12-14 2015-10-14 京东方科技集团股份有限公司 一种阵列基板、有机发光显示面板及显示装置
CN104637890B (zh) * 2013-11-14 2017-09-22 昆山工研院新型平板显示技术中心有限公司 一种薄膜封装结构

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104884528A (zh) * 2012-12-26 2015-09-02 第一毛织株式会社 封装组合物、包含其的阻挡层及包含其的封装装置
CN105591035A (zh) * 2016-02-29 2016-05-18 广州新视界光电科技有限公司 一种杂化白光有机电致发光器件

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