WO2018036299A1 - 阵列基板及显示装置 - Google Patents

阵列基板及显示装置 Download PDF

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Publication number
WO2018036299A1
WO2018036299A1 PCT/CN2017/092924 CN2017092924W WO2018036299A1 WO 2018036299 A1 WO2018036299 A1 WO 2018036299A1 CN 2017092924 W CN2017092924 W CN 2017092924W WO 2018036299 A1 WO2018036299 A1 WO 2018036299A1
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Prior art keywords
array substrate
thin film
film transistor
planarization layer
substrate
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PCT/CN2017/092924
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English (en)
French (fr)
Inventor
刘利萍
张南红
汤展峰
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US15/742,198 priority Critical patent/US10495933B2/en
Publication of WO2018036299A1 publication Critical patent/WO2018036299A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133776—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers having structures locally influencing the alignment, e.g. unevenness
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Definitions

  • the present invention belongs to the field of display technologies, and in particular, to an array substrate and a display device.
  • the liquid crystal display generally includes: an array substrate and a color filter substrate disposed opposite to each other, and a liquid crystal layer disposed between the array substrate and the color filter substrate.
  • the array substrate generally includes a substrate 10; a thin film transistor 1 formed on the substrate 10; a planarization layer 2 formed over the layer in which the thin film transistor 1 is located, wherein the planarization layer 2 and the thin film transistor 1 a drain hole 21 corresponding to a position of the drain electrode 11; a pixel electrode 3 formed above the planarization layer 2, the pixel electrode 3 being connected to the drain electrode 11 of the thin film transistor 1 through the via hole 21; formed above the pixel electrode 3 Orientation layer.
  • the alignment layer is usually formed by spraying an alignment liquid on the pixel electrode 3, and then the alignment liquid is cured to form an alignment layer.
  • the via holes 21 are provided in the planarization layer 2, the surface layer of the array substrate is not flat (the position of the dashed box), and the morphology is different. Therefore, after the alignment liquid is sprayed on the surface, corresponding to the via hole 21
  • the diffusion speed of the alignment liquid at the position is obviously different from the diffusion speed at other positions, so that the problem of uneven diffusion of the alignment liquid is liable to occur, and the thickness of the alignment layer formed is not uniform, and the array substrate is applied to the display device. Can cause poor display problems.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and provides An array substrate and a display device which can uniformly diffuse an alignment liquid.
  • the technical solution adopted to solve the technical problem of the present invention is an array substrate comprising a substrate and a via hole located above the substrate, the array substrate further comprising a diffusion layer for diffusing the alignment liquid at the position of the via hole a diffusing portion having an orthographic projection on the substrate and an orthographic projection of the via on the substrate.
  • the array substrate further includes a thin film transistor on the substrate, a planarization layer above the thin film transistor, and a pixel electrode above the planarization layer;
  • the via hole is located at a position corresponding to a drain of the thin film transistor in the planarization layer for electrically connecting a drain of the thin film transistor to the pixel electrode.
  • the diffusion portion is a groove located in the pixel electrode.
  • the depth of the groove is the same as the thickness of the pixel electrode.
  • the shape of the groove is a rectangle.
  • the groove has a length ranging from 1 ⁇ m to 20 ⁇ m; and a width ranging from 1 ⁇ m to 100 ⁇ m.
  • the diffusion portion is a recess located in the planarization layer.
  • the recess is located in a planarization layer of the via away from the side of the thin film transistor.
  • the recess is located in a planarization layer on two opposite sides of the via.
  • the depth of the recess is smaller than the thickness of the planarization layer.
  • the shape of the concave portion is a rectangle.
  • the recess has a length ranging from 1 ⁇ m to 20 ⁇ m; and a width ranging from 1 ⁇ m to 500 ⁇ m.
  • the technical solution adopted to solve the technical problem of the present invention is a method for preparing an array substrate, comprising: a step of forming a via hole above a substrate; the preparation method further comprising forming an alignment liquid for the position of the via hole a step of diffusing the diffusion; wherein an orthographic projection of the diffusion on the substrate interfaces with an orthographic projection of the via on the substrate.
  • the preparation method specifically includes:
  • the preparation method specifically includes:
  • a pattern including the via hole and the diffusion portion is formed at a position corresponding to the drain of the thin film transistor in the planarization layer by a patterning process using a gray scale mask or a halftone mask.
  • a technical solution adopted to solve the technical problem of the present invention is a display device including the above array substrate.
  • a diffusion portion for diffusing the alignment liquid at the position of the via hole is provided, and the orthographic projection of the diffusion portion on the substrate is in contact with the orthographic projection of the via hole on the substrate, and thus is not formed.
  • the concave surface of the surface of the array substrate of the alignment liquid corresponding to the position of the via is made to be transitionally connected via the surface of the diffusion portion.
  • 1 is a cross-sectional view of a conventional array substrate
  • FIG. 2 is a plan view of a conventional array substrate
  • FIG. 3 is an array substrate of a first preferred implementation manner of Embodiment 1 of the present invention.
  • Embodiment 4 is a plan view of an array substrate according to a first preferred embodiment of Embodiment 1 of the present invention
  • FIG. 5 is a flow chart showing a method of fabricating the array substrate shown in FIG. 4;
  • Figure 6 is a cross-sectional view showing an array substrate of a second preferred embodiment of Embodiment 1 of the present invention.
  • FIG. 7 to FIG. 10 are plan views of a planarization layer having different diffusion portions of an array substrate according to a second preferred embodiment of the first embodiment of the present invention.
  • FIG. 11 is a flow chart showing a method of fabricating the array substrate shown in FIG. 6.
  • the reference numerals are: 10, the substrate; 1, the thin film transistor; 2, the planarization layer; 3, the pixel electrode; 4, the diffusion portion; 11, the drain;
  • the embodiment provides an array substrate including a substrate, a via hole and a diffusion portion above the substrate; wherein an orthographic projection of the diffusion portion on the substrate and an orthographic projection of the via hole on the substrate; the diffusion portion is used for The alignment liquid at the position of the via is diffused.
  • a diffusion portion for diffusing the alignment liquid at the position of the via hole is provided, and the orthographic projection of the diffusion portion on the substrate is connected to the orthographic projection of the via hole on the substrate, and thus
  • the concave surface of the surface of the array substrate on which the alignment liquid is formed corresponds to the position of the via hole, and is transitionally joined via the surface of the diffusion portion.
  • the array substrate of the present embodiment will be described below in combination with two preferred implementations.
  • the array substrate includes a substrate 10, a thin film transistor 1 on the substrate 10, and a planarization layer 2 above the thin film transistor 1, which is planarized. a pixel electrode 3 above the layer 2; wherein a via 21 is provided at a position corresponding to the drain 11 of the thin film transistor 1 in the planarization layer 2, and the via 21 is used to connect the drain 11 of the thin film transistor 1
  • the pixel electrode 3 is electrically connected; a diffusion portion 4 is disposed in the pixel electrode 3, and an orthographic projection of the diffusion portion 4 on the substrate 10 and a via 21 for connecting the pixel electrode 3 to the drain electrode 11 of the thin film transistor 1 are provided.
  • the orthographic projections on the substrate 10 are used to diffuse the alignment liquid at the location of the vias 21.
  • the shape of the diffusing portion 4 may be a rectangular recess, and the depth thereof is preferably the same as the thickness of the pixel electrode 3, the width is 1 ⁇ m to 20 ⁇ m, and the length is 1 ⁇ m to 100 ⁇ m.
  • the diffusing portion 4 can also adopt other shapes and sizes depending on the specific situation.
  • the array substrate faces away from the surface (upper surface) of the substrate 10, and although there is a concave topography at a position corresponding to the via hole 21, since the diffusion portion 4 is provided in the pixel electrode 3, diffusion The portion 4 is connected to the orthographic projection of the via hole 21 on the substrate 10, and the shape of the diffusion portion 4 is a groove such that the height of the array substrate at the position of the diffusion portion 4 is lower than the height at other positions around the via hole 21, thereby When the alignment liquid is sprayed later, the alignment liquid at the position of the via hole 21 is drained by the diffusion portion 4 to uniformly diffuse the alignment liquid at the position of the via hole 21, thereby preventing the display defect due to uneven diffusion of the alignment liquid. .
  • the present embodiment further provides a method for preparing the array substrate, as shown in FIG. 5, which specifically includes the following steps:
  • Step 1 The layer structure of the thin film transistor 1 is formed on the substrate 10 by a patterning process.
  • the step is specifically formed by the following steps: gate/gate line ⁇ gate insulating layer ⁇ active layer ⁇ source/drain 11.
  • Step 2 On the substrate 10 on which the first step is completed, a planarization layer 2 is formed, and a via hole 21 is formed in the planarization layer 2 at a position corresponding to the drain 11 of the thin film transistor 1 by an etching process.
  • Step 3 On the substrate 10 on which the step 2 is completed, a pattern including the pixel electrode 3 and the diffusion portion 4 is formed by one patterning process.
  • the pixel electrode 3 is connected to the drain 11 of the thin film transistor 1 through the via hole; the diffusion portion 4 is a groove located in the pixel electrode 3.
  • the step of completing the above three steps may further include a step of forming an alignment liquid by spraying, and then a step of curing the alignment liquid to form an alignment layer.
  • the array substrate is different from the array substrate in the first preferred embodiment only in that the arrangement positions of the diffusion portions 4 are different.
  • the diffusing portion 4 is disposed in the planarization layer 2 and is in contact with the orthographic projection of the via holes 21 in the planarization layer 2 on the substrate 10. That is, the diffusion portion 4 and the via hole 21 are integrally formed.
  • the diffusing portion 4 is provided as a concave portion, and it can be seen that the side where the through hole 21 and the diffusing portion 4 are in contact with each other forms a step.
  • the thickness of the planarization layer 2 corresponding to the position of the concave portion is significantly lower than the thickness of the planarization layer 2 at other positions around the via hole 21, so that when the alignment liquid is sprayed, the alignment liquid at the position of the via hole 21 is drained by the diffusion portion 4.
  • the alignment liquid at the position of the via hole 21 is uniformly diffused, thereby preventing the display defect due to uneven diffusion of the alignment liquid.
  • the thickness of the recess may be smaller than the thickness of the planarization layer 2.
  • the via holes 21 and the recesses located in the planarization layer 2 may be formed in a single patterning process using a gray scale mask or a halftone mask.
  • the number and specific size of the diffusion portions 4 can be set in accordance with the diffusion ability of the alignment liquid to be sprayed later.
  • the recess is located in the planarization layer 2 of the via 21 away from the thin film transistor 1 at this time, and the sprayed alignment liquid will diffuse through the recess to the display region of the array substrate.
  • the display area refers to an area in the array substrate for display that can transmit light of the backlight.
  • the recess may have a width of 1 ⁇ m to 20 ⁇ m and a length of 1 ⁇ m to 500 ⁇ m.
  • the size and shape of the diffusing portion 4 can also be designed according to specific conditions. As shown in FIG. 7-10, if the diffusion ability of the alignment liquid is good, it is only necessary to provide the diffusion portion 4 on the side of the via hole 21 close to the display region, and the diffusion ability of the alignment liquid is better, and diffusion is performed.
  • the width of the portion can be designed to be wider (as shown in Figures 7 and 8, W1 is greater than W2). If the diffusion ability of the alignment liquid is poor, it is necessary to provide the diffusion portion 4 on both sides of the via hole 21 in the above manner, and the diffusion ability of the alignment liquid is worse, and the shape of the diffusion portion can be designed to be more elongated (as shown in the figure). As shown in Figures 9 and 10, L1 is less than L2) to help relieve the surface tension of the alignment liquid to allow better dispersion of the alignment liquid.
  • the embodiment further provides a method for preparing the array substrate, as shown in FIG. 11 , which specifically includes the following steps:
  • Step 1 The layer structure of the thin film transistor 1 is formed on the substrate 10 by a patterning process.
  • the step is specifically formed by the following steps: gate/gate line ⁇ gate insulating layer ⁇ active layer ⁇ source/drain 11.
  • Step 2 on the substrate 10 on which the first step is completed, a planarization layer 2 is formed, and a via hole 21 is formed at a position corresponding to the drain 11 of the thin film transistor 1 in the planarization layer 2 by one patterning process.
  • the planarization layer 2 is exposed through a halftone mask or a gray scale mask, and a pattern including the via 21 and the diffusion portion 4 is formed by one patterning process.
  • Step 3 On the substrate 10 on which the second step is completed, a pattern including the pixel electrode 3 is formed by a patterning process.
  • the pixel electrode 3 is connected to the drain 11 of the thin film transistor 1 through the via 21 .
  • the step of completing the above three steps may further include a step of forming an alignment liquid by spraying, and then a step of curing the alignment liquid to form an alignment layer.
  • the diffusion portion 4 is not limited to be disposed in the pixel electrode 3 and the planarization layer 2, and may be disposed in other film layers on the array substrate as long as the projection phase of the diffusion portion 4 and the via hole 21 on the substrate 10 is ensured. Connected to be able to The alignment liquid at the position of the via hole 21 may be diffused. It should also be understood that in the present embodiment, only the diffusion portion 4 is provided at the position of the via hole 21 for connecting the drain electrode 11 of the thin film transistor 1 and the pixel electrode 3 to improve the alignment liquid at the position of the via hole 21. Diffusion uniformity is taken as an example for illustration.
  • the via hole may be a via hole for connecting the common electrode and the common electrode.
  • the diffusion portion 4 may be provided at the via hole position to improve the diffusion uniformity of the alignment liquid.
  • the diffusion portion 4 can be provided for the via hole at any position on the array substrate in accordance with the above concept.
  • This embodiment provides a display device including the array substrate in Embodiment 1. Therefore, the display device displays better results.
  • the display device may be a liquid crystal display device or an electroluminescence display device, such as a liquid crystal panel, an electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, or the like, or any display product or component. .

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Abstract

一种阵列基板及显示装置，属于显示技术领域。阵列基板包括基底（10）、位于基底（10）上方的过孔（21）和扩散部（4），且扩散部（4）在基底（10）上的正投影与过孔（21）在基底（10）上的正投影相接；扩散部（4），用于对过孔（21）位置处的取向液进行扩散。由于阵列基板设置有用于将过孔（21）位置处的取向液进行扩散的扩散部（4），且扩散部（4）在基底（10）上的正投影与过孔（21）在基底（10）上的正投影相接，因此在对该阵列基板表面喷涂取向液时，过孔（21）位置处的取向液将由扩散部（4）进行引流，以使过孔（21）位置处的取向液均匀扩散，从而防止由于取向液扩散不均而造成显示不良的问题。

Description

阵列基板及显示装置
本申请要求于2016年8月22日提交的申请号为201610700967.X、发明名称为“阵列基板及显示装置”的中国专利申请的优先权，在此将其内容全部并入本文。
技术领域
本发明属于显示技术领域，具体涉及一种阵列基板及显示装置。
背景技术
液晶显示器一般包括：相对设置阵列基板和彩膜基板，以及设置在阵列基板和彩膜基板之间的液晶层。
如图1和2所示，阵列基板通常包括基底10；形成在基底10上的薄膜晶体管1；形成在薄膜晶体管1所在层上方的平坦化层2，其中，在平坦化层2与薄膜晶体管1的漏极11对应的位置设置过孔21；形成在平坦化层2上方的像素电极3，像素电极3是通过过孔21与薄膜晶体管1的漏极11连接的；形成在像素电极3上方的取向层。
其中，取向层通常是采用将取向液喷涂在像素电极3上形成的，之后再将取向液进行固化形成取向层。由于在平坦化层2中设置有过孔21，阵列基板的表层并不平坦(虚线方框的位置)，形貌存在差异，故将取向液喷涂于该表面后，与过孔21所对应的位置处的取向液的扩散速度明显与其他位置的扩散速度不同，这样就容易产生取向液扩散不均的问题，从而导致所形成的取向层厚度不均一，将该阵列基板应用至显示装置，将会导致显示不良的问题。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提供 一种可以使得取向液均匀扩散的阵列基板及显示装置。
解决本发明技术问题所采用的技术方案是一种阵列基板，包括基底和位于所述基底上方的过孔，所述阵列基板还包括用于对所述过孔所在位置处的取向液进行扩散的扩散部，所述扩散部在所述基底上的正投影与所述过孔在所述基底上的正投影相接。
其中，所述阵列基板还包括位于基底上的薄膜晶体管，位于所述薄膜晶体管上方的平坦化层，位于所述平坦化层上方的像素电极；其中，
所述过孔位于所述平坦化层中与所述薄膜晶体管的漏极对应的位置处，用于将所述薄膜晶体管的漏极与所述像素电极电连接。
其中，所述扩散部为位于所述像素电极中的凹槽。
其中，所述凹槽的深度与所述像素电极的厚度相同。
其中，所述凹槽的形状为长方形。
其中，所述凹槽的长度范围为1μm至20μm；宽度范围为1μm至100μm。
其中，所述扩散部为位于所述平坦化层中的凹部。
其中，所述凹部位于所述过孔远离所述薄膜晶体管一侧的平坦化层中。
其中，所述凹部位于所述过孔的两个相对侧的平坦化层中。
其中，所述凹部的深度小于平坦化层的厚度。
其中，所述凹部的形状为长方形。
其中，所述凹部的长度范围为1μm至20μm；宽度范围为1μm至500μm。
解决本发明技术问题所采用的技术方案是一种阵列基板的制备方法，包括：在基底上方形成过孔的步骤；所述制备方法还包括形成用于对所述过孔位置处的取向液进行扩散的扩散部的步骤；其中，所述扩散部在所述基底上的正投影与所述过孔在所述基底上的正投影相接。
优选的是，所述制备方法具体包括：
通过构图工艺在基底上形成薄膜晶体管的各层结构的步骤；
形成平坦化层，并通过构图工艺在平坦化层中与所述薄膜晶体管的漏极对应位置处形成包括所述过孔的图形；
通过一次构图工艺，形成包括像素电极和所述扩散部的图形；其中，所述像素电极通过所述过孔与所述薄膜晶体管漏极连接；所述扩散部为位于所述像素电极中的凹槽。
优选的是，所述制备方法具体包括：
通过构图工艺在基底上形成薄膜晶体管的各层结构的步骤；
形成平坦化层，并通过一次构图工艺，在平坦化层中与所述薄膜晶体管的漏极对应位置处形成包括所述过孔和所述扩散部的图形；其中，所述扩散部为位于所述平坦化层中的凹部。
其中，采用灰阶掩模板或者半色调掩模板，通过一次构图工艺，在平坦化层中与所述薄膜晶体管的漏极对应位置处形成包括所述过孔和所述扩散部的图形。
解决本发明技术问题所采用的技术方案是一种显示装置，其包括上述的阵列基板。
本发明具有如下有益效果：
本发明中的阵列基板中，设置有用于将过孔位置处的取向液进行扩散的扩散部，且扩散部在基底上的正投影与过孔在基底上的正投影相接，因此在未形成取向液的阵列基板表面与过孔位置对应的凹面是经由扩散部的表面进行过渡衔接的。之后对该阵列基板表面喷涂取向液时，过孔位置处的取向液将由扩散部进行引流，以使过孔位置处的取向液均匀扩散，从而防止由于取向液扩散不均而成显示不良的问题。
附图说明
图1为现有的阵列基板的截面图；
图2为现有的阵列基板的俯视图；
图3为本发明的实施例1中第一种优选实现方式的阵列基板 的截面图；
图4为本发明的实施例1中第一种优选实现方式的阵列基板的俯视图；
图5为图4所示的阵列基板的制备方法的流程图；
图6为本发明的实施例1中第二种优选实现方式的阵列基板的截面图；
图7至图10为本发明的实施例1中第二种优选实现方式的阵列基板的具有不同扩散部的平坦化层的俯视图；
图11为图6所示的阵列基板的制备方法的流程图。
其中附图标记为：10、基底；1、薄膜晶体管；2、平坦化层；3、像素电极；4、扩散部；11、漏极；21、过孔。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1：
本实施例提供一种阵列基板，其包括基底，位于基底上方的过孔和扩散部；其中，扩散部在基底上的正投影与过孔在基底上的正投影相接；扩散部用于将过孔位置处的取向液进行扩散。
本实施例中的阵列基板中，设置有用于将过孔位置处的取向液进行扩散的扩散部，且扩散部在基底上的正投影与过孔在基底上的正投影相接，因此在未形成取向液的阵列基板表面与过孔位置对应的凹面是经由扩散部的表面进行过渡衔接的。之后对该阵列基板表面喷涂取向液时，过孔位置处的取向液将由扩散部进行引流，以使过孔位置处的取向液均匀扩散，从而防止由于取向液扩散不均而成显示不良的问题。
以下结合两种优选实现方式对本实施例的阵列基板进行说明。
结合图3和4所示，作为本实施例的第一种优选实现方式，该阵列基板包括基底10，位于基底10上的薄膜晶体管1，位于薄膜晶体管1上方的平坦化层2，位于平坦化层2上方的像素电极3；其中，在平坦化层2中与薄膜晶体管1的漏极11对应的位置处设置有过孔21，该过孔21用于将薄膜晶体管1的漏极11与所述像素电极3电连接；在像素电极3中设置有扩散部4，且该扩散部4在基底10上的正投影与用于该像素电极3与薄膜晶体管1的漏极11连接的过孔21在基底10上的正投影相接，用于将过孔21位置处的取向液进行扩散。
其中，扩散部4的形状可以为长方形凹槽，其深度优选与像素电极3的厚度相同，宽度为1μm～20μm，长度为1μm～100μm。当然，扩散部4也可以根据具体情况采用其他形状和尺寸。
此时，可以看出，上述阵列基板背离基底10的表面(上表面)，虽然在与过孔21对应的位置会存在下凹的形貌，但是由于在像素电极3中设置扩散部4，扩散部4与过孔21在基底10上的正投影相接，扩散部4的形状为凹槽，使得阵列基板在扩散部4位置处的高度低于过孔21周围的其他位置处的高度，进而使得在之后喷涂取向液时，过孔21位置处的取向液将由扩散部4进行引流，以使过孔21位置处的取向液均匀扩散，从而防止由于取向液扩散不均而造成显示不良的问题。
针对上述阵列基板，本实施例还提供了该种阵列基板的制备方法，如图5所示，具体包括如下步骤：
步骤一、通过构图工艺在基底10上形成薄膜晶体管1的各层结构。
以该步骤中所形成的薄膜晶体管1为底栅型薄膜晶体管为例，该步骤具体为通过以下顺序形成：栅极/栅线→栅极绝缘层→有源层→源极/漏极11。
步骤二、在完成步骤一的基底10上，形成平坦化层2，通过刻蚀工艺，在所述平坦化层2中与所述薄膜晶体管1漏极11对应的位置处形成过孔21。
步骤三、在完成步骤二的基底10上，通过一次构图工艺形成包括像素电极3和扩散部4的图形。其中，所述像素电极3通过所述过孔与所述薄膜晶体管1的漏极11连接；所述扩散部4为位于所述像素电极3中的凹槽。
当然，在完成上述三个步骤的基底上还可以包括，采用喷涂的方式形成取向液的步骤，以及之后对取向液进行固化形成取向层的步骤。
结合图6所示，作为本实施例的第二种优选实现方式，该阵列基板与第一种优选实现方式中的阵列基板的区别仅在于扩散部4的设置位置不同。该扩散部4设置于平坦化层2中，且与平坦化层2中的过孔21在基底10上的正投影是相接的。也就是说，扩散部4与过孔21为一体成型结构。例如，将扩散部4设置为凹部，此时可以看出过孔21与扩散部4相接的侧边形成台阶。而凹部位置所对应的平坦化层2的厚度明显低于过孔21周围其他位置的平坦化层2的厚度，因此之后喷涂取向液时，过孔21位置处的取向液将由扩散部4进行引流，以使过孔21位置处的取向液均匀扩散，从而防止由于取向液扩散不均而成显示不良的问题。
凹部的厚度可以小于平坦化层2的厚度。此时，位于平坦化层2中的过孔21与凹部可以采用灰阶掩模板或者半色调掩模板在一次构图工艺中形成。
其中，扩散部4的数量和具体尺寸可以根据之后将要喷涂的取向液的扩散能力进行设置。例如，凹部位于所述过孔21远离所述薄膜晶体管1一侧的平坦化层2中，此时所喷涂的取向液将通过该凹部向阵列基板的显示区扩散。其中，显示区是指阵列基板中用于显示，可以使得背光源的光透过的区域。
凹部的宽度可以为1μm～20μm，长度可以为1μm～500μm。
当然，扩散部4的尺寸和形状也可以根据具体情况设计。结合图7-10所示，如果取向液的扩散能力很好，此时仅需在过孔21靠近显示区的一侧设置扩散部4，且取向液的扩散能力越好，扩散 部的宽度可以设计得越宽(如图7和8中所示，W1大于W2)。如果取向液的扩散能力较差，则需要按照上述的方式在过孔21的两侧均设置扩散部4，且取向液的扩散能力越差，扩散部的形状可以设计得愈加细长(如图9和10所示，L1小于L2)，以助于缓解取向液的表面张力，以使取向液更好的扩散。
针对上述阵列基板，本实施例还提供了该种阵列基板的制备方法，如图11所示，具体包括如下步骤：
步骤一、通过构图工艺在基底10上形成薄膜晶体管1的各层结构。
以该步骤中所形成的薄膜晶体管1为底栅型薄膜晶体管为例，该步骤具体为通过以下顺序形成：栅极/栅线→栅极绝缘层→有源层→源极/漏极11。
步骤二、在完成步骤一的基底10上，形成平坦化层2，通过一次构图工艺，在所述平坦化层2中与所述薄膜晶体管1的漏极11对应的位置处形成过孔21和扩散部4的图形；其中，扩散部4为位于所述平坦化层中的凹部。
在该步骤中，具体地，通过半色调掩模板或者灰阶掩模板，对平坦化层2进行曝光，通过一次构图工艺形成包括过孔21和扩散部4的图形。
步骤三、在完成步骤二的基底10上，通过构图工艺形成包括像素电极3的图形。其中，所述像素电极3通过所述过孔21与所述薄膜晶体管1的漏极11连接。
当然，在完成上述三个步骤的基底上还可以包括，采用喷涂的方式形成取向液的步骤，以及之后对取向液进行固化形成取向层的步骤。
在此需要说明的是，仅以上述两种具体实现方式对本实施例的阵列基板进行说明。实际上，扩散部4不局限于设置在像素电极3和平坦化层2中，也可以设置于阵列基板上的其他膜层中，只要保证扩散部4与过孔21在基底10上的投影相接从而能够对 过孔21位置处的取向液进行扩散即可。还应当理解的是，本实施例中也仅是以在用来对薄膜晶体管1的漏极11与像素电极3连接的过孔21位置处设置扩散部4以改善过孔21位置处的取向液扩散均一性为例进行说明。实际上，过孔也可以为用于公共电极与公共电极连接的过孔，按照上述构思也可以在该过孔位置处设置扩散部4以对取向液的扩散均一性进行改善。类似地，可以按照上述构思为阵列基板上任何位置处的过孔设置扩散部4。
实施例2：
本实施例提供一种显示装置，其包括实施例1中的阵列基板。因此，该显示装置显示效果更好。
其中，显示装置可以为液晶显示装置或者电致发光显示装置，例如液晶面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (17)

  1. 一种阵列基板，包括基底和位于所述基底上方的过孔，其中，所述阵列基板还包括用于对所述过孔位置处的取向液进行扩散的扩散部，所述扩散部在所述基底上的正投影与所述过孔在所述基底上的正投影相接。
  2. 根据权利要求1所述的阵列基板，还包括位于基底上的薄膜晶体管、位于所述薄膜晶体管上方的平坦化层、位于所述平坦化层上方的像素电极；其中，
    所述过孔位于所述平坦化层中与所述薄膜晶体管的漏极对应的位置处，用于将所述薄膜晶体管的漏极与所述像素电极电连接。
  3. 根据权利要求2所述的阵列基板，其中，所述扩散部为位于所述像素电极中的凹槽。
  4. 根据权利要求3所述的阵列基板，其中，所述凹槽的深度与所述像素电极的厚度相同。
  5. 根据权利要求2或3所述的阵列基板，其中，所述凹槽的形状为长方形。
  6. 根据权利要求5所述的阵列基板，其中，所述凹槽的长度范围为1μm至20μm；宽度范围为1μm至100μm。
  7. 根据权利要求2所述的阵列基板，其中，所述扩散部为位于所述平坦化层中的凹部。
  8. 根据权利要求7所述的阵列基板，其中，所述凹部位于所述过孔远离所述薄膜晶体管一侧的平坦化层中。
  9. 根据权利要求7所述的阵列基板，其中，所述凹部位于所述过孔的两个相对侧的平坦化层中。
  10. 根据权利要求7至9中任一项所述的阵列基板，其中，所述凹部的深度小于平坦化层的厚度。
  11. 根据权利要求7至9中任一项所述的阵列基板，其中，所述凹部的形状为长方形。
  12. 根据权利要求11所述的阵列基板，其中，所述凹部的长度范围为1μm至20μm；宽度范围为1μm至500μm。
  13. 一种阵列基板的制备方法，包括在基底上方形成过孔的步骤，其中，所述制备方法还包括形成用于对所述过孔位置处的取向液进行扩散的扩散部的步骤；其中，所述扩散部在所述基底上的正投影与所述过孔在所述基底上的正投影相接。
  14. 根据权利要求13所述的阵列基板的制备方法，其中，所述制备方法具体包括：
    通过构图工艺在基底上形成薄膜晶体管的各层结构的步骤；
    形成平坦化层，并通过构图工艺在所述平坦化层中与所述薄膜晶体管的漏极对应位置处形成包括所述过孔的图形；
    通过一次构图工艺，形成包括像素电极和所述扩散部的图形；其中，所述像素电极通过所述过孔与所述薄膜晶体管漏极连接；所述扩散部为位于所述像素电极中的凹槽。
  15. 根据权利要求13所述的阵列基板的制备方法，其中，所述制备方法具体包括：
    通过构图工艺在基底上形成薄膜晶体管的各层结构的步骤；
    形成平坦化层，并通过一次构图工艺，在平坦化层中与所述薄膜晶体管的漏极对应位置处形成包括所述过孔和所述扩散部的图形；其中，所述扩散部为位于所述平坦化层中的凹部。
  16. 根据权利要求15所述的阵列基板的制备方法，其中，采用灰阶掩模板或者半色调掩模板，通过一次构图工艺，在平坦化层中与所述薄膜晶体管的漏极对应位置处形成包括所述过孔和所述扩散部的图形。
  17. 一种显示装置，包括权利要求1-12中任一项所述的阵列基板。
PCT/CN2017/092924 2016-08-22 2017-07-14 阵列基板及显示装置 Ceased WO2018036299A1 (zh)

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