WO2018036191A1 - 一种钙钛矿薄膜的蒸发设备及其使用方法和应用 - Google Patents

一种钙钛矿薄膜的蒸发设备及其使用方法和应用 Download PDF

Info

Publication number
WO2018036191A1
WO2018036191A1 PCT/CN2017/082792 CN2017082792W WO2018036191A1 WO 2018036191 A1 WO2018036191 A1 WO 2018036191A1 CN 2017082792 W CN2017082792 W CN 2017082792W WO 2018036191 A1 WO2018036191 A1 WO 2018036191A1
Authority
WO
WIPO (PCT)
Prior art keywords
deposition
evaporation
chamber
deposition chamber
deposited
Prior art date
Application number
PCT/CN2017/082792
Other languages
English (en)
French (fr)
Inventor
姚冀众
颜步一
Original Assignee
杭州纤纳光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 杭州纤纳光电科技有限公司 filed Critical 杭州纤纳光电科技有限公司
Publication of WO2018036191A1 publication Critical patent/WO2018036191A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the present invention relates to an evaporation apparatus for a perovskite film and a method and use thereof.
  • Perovskite solar cells as third-generation photovoltaic cells, have high conversion efficiencies and low raw material costs.
  • the production methods of perovskite batteries used in research institutes are all solution coating methods.
  • the core of this type of method is to uniformly coat the precursor solution of perovskite on the electron or hole transport layer, and then laminate the corresponding holes or electron transport layers on the perovskite layer.
  • the large-area solar cells prepared by solution coating are inefficient because their critical perovskite layer is difficult to maintain uniform over a large scale area, which directly leads to the performance of large-area perovskite solar cells. Very poor, it is the main reason why it is difficult to industrialize at present.
  • a perovskite semiconductor layer may be deposited by evaporation.
  • an apparatus for preparing a perovskite by vapor deposition is basically to place one or two substrates in one cavity, and then deposit a perovskite film on the substrate. This increases the evaporation time of the monolithic cell, greatly reducing the deposition efficiency.
  • some devices also use a cavity to deposit a dozen substrates, but they simply use a chemical vapor deposition device to place the evaporation source and the substrate in the same chamber.
  • the evaporation source is on the left side of the chamber, and the substrate is placed vertically on the right side of the chamber.
  • Nitrogen gas (N 2 ) is passed to the left side to move nitrogen and steam together to the right substrate. Since the vapor that first contacts the substrate reacts first, the concentration of the vapor on the back side gradually decreases. This situation becomes more serious as the number of the right substrate increases, resulting in insufficient reaction of the rightmost substrate, resulting in the leftmost substrate. It is uneven with the thickness of the deposited film of the rightmost substrate.
  • the two heating sources of the same chamber radiate thermal energy to each other, so that the actual temperature and the set temperature deviation of the evaporation source and the substrate are large, which is disadvantageous for temperature control of the chamber.
  • placing the evaporation source and the substrate in the same chamber is also inconvenient to add steam feedstock during the evaporation process.
  • the lower heating plate is placed with a BX ⁇ substrate deposited.
  • the two heating plates radiate heat to each other in the same chamber, it is inconvenient to accurately control the temperature of the chamber.
  • the amount of evaporating material sprayed on the upper heating plate is also limited, and it is not possible to feed during the deposition process, so that the deposition may be carried out once or several times.
  • the evaporation of the vapor in the vapor formed by the evaporation of the vapor is upward. Since the pipe connected to the vacuum pump is at the top of the cavity, the top pressure is low, and the vapor molecules are caused to diffuse upward, so that the amount actually reaching the substrate is relatively small, which is disadvantageous for depositing the film. Thick control.
  • the technical problem to be solved by the present invention is to provide a perovskite film evaporation device and a method and application thereof, which can deposit a dozen or even dozens of batteries in one chamber, thereby improving The deposition efficiency of the perovskite film reduces the deposition time of the monolithic cell.
  • the present invention is achieved by providing an apparatus for evaporating a perovskite film, comprising a bifurcation system and a deposition system, wherein the evaporation system and the deposition system are connected to each other through a vapor passage, and the evaporation system includes a deposition chamber.
  • a deposition support for placing a substrate to be deposited is disposed in the deposition chamber, a mesh screen is disposed between the steam passage inlet port of the deposition chamber and the substrate to be deposited, and a plurality of through holes for facilitating steam passage are disposed on the mesh screen to evaporate
  • the vapor evaporated by the system enters the deposition chamber through the steam passage and is evenly distributed on the surface of the substrate to be deposited after passing through the through hole of the mesh; a steam valve is also disposed on the steam passage.
  • the deposition support is disposed on the bottom surface of the deposition cavity, the mesh sieve is disposed directly above the deposition support, the steam passage inlet port is disposed at the top of the deposition cavity, and the vapor evaporated from the evaporation system passes through the deposition cavity. After the top steam passage enters the port, it passes down through the mesh and is evenly distributed on the surface of the substrate to be deposited on the lower deposition support.
  • the deposition system further includes a deposition heating device, a vacuum device, a deposition detecting device, and a nitrogen input pipe, the deposition heating device is disposed on both sides of the deposition cavity, the vacuum device controls the vacuum degree of the deposition cavity, and the deposition detecting device
  • the device includes a device for detecting the temperature of the chamber of the deposition chamber, a device for vacuuming, and a device for detecting the thickness of the film grown on the surface of the deposition substrate, and the nitrogen inlet pipe port is disposed in the deposition chamber. Side.
  • the evaporation device is provided with at least one evaporation system, and the evaporation system includes an evaporation sub-cavity, an evaporation heating device, an evaporation detecting device and a feeding device, and the evaporation sub-cavity is disposed outside the deposition cavity, and one end of the steam passage is The evaporation sub-cavity is connected, the other end of which is connected with the deposition cavity, and the evaporation heating device heats the evaporation sub-cavity.
  • the feeding device comprises a feeding pipe and a feeding funnel, and a feeding valve is arranged on the feeding pipe;
  • the device comprises an evaporation temperature detector for detecting the temperature of the evaporation sub-chamber and a material detector for detecting the amount of material in the evaporation sub-chamber; a certain amount of evaporating material is contained in the evaporation sub-chamber, and the evaporating material is a film material deposited on the surface of the substrate to be deposited. Crystal powder and / or solvent.
  • a heating device is disposed on the steam passage.
  • the evaporation device further includes a control system, and the control system is divided into two modes: an automatic control mode and a manual control mode, and the automatic control mode automatically performs heating of the evaporation system and the deposition system, vacuuming of the deposition cavity, and deposition.
  • the nitrogen flow of the chamber, the separation of the steam valve and the deposition process of the deposition chamber, in the manual control mode, the heating of the evaporation system and the deposition system, the evacuation of the deposition chamber, the nitrogen flow of the deposition chamber, and the deposition chamber are manually performed.
  • the separation of the steam valve and the deposition process of the deposition chamber are manually performed.
  • the shape of the through hole of the mesh screen is at least one of a circular shape, an elliptical shape and a polygonal shape.
  • the present invention also discloses a method of using the evaporation apparatus of the perovskite film as described above, comprising the following steps:
  • the substrate to be deposited is placed in a deposition support in a deposition chamber, the chamber door of the deposition chamber is closed, and the deposition chamber is vacuumed by a vacuum device, wherein Lead (Pb), tin (Sn), tungsten, copper, zinc, gallium, germanium, arsenic, selenium, tellurium, palladium, silver, cadmium, indium, antimony, bismuth, antimony, platinum, gold, mercury, antimony, At least one cation of ruthenium and osmium, and X is at least one anion of iodine (I), bromine (Br), and chlorine (C1).
  • Pb Lead
  • Sn tin
  • tungsten copper, zinc, gallium, germanium, arsenic, selenium, tellurium, palladium, silver, cadmium, indium, antimony, bismuth, antimony, platinum, gold, mercury, antimony
  • the nitrogen gas is initially charged; the gas pressure is controlled at 10 - 4 Pa ⁇ latm.
  • the crystal powder is poured into the evaporation sub-cavity through a feeding device of the evaporation system located on the left side of the deposition chamber, wherein the crystal powder is an AX crystal powder, wherein A is an amine group (eg: A An amine group MA;), a mercapto group (e.g., ethylidene group FA) or at least one of an alkali group; a solvent is poured into an evaporation sub-chamber of another evaporation system located on the right side of the deposition chamber, wherein the solvent includes Amide solvent, sulfone/sulfoxide solvent, ester At least one of a solvent-like solvent, a hydrocarbon, a 3 ⁇ 4 hydrocarbon solvent, an alcohol solvent, a ketone solvent, an ether solvent, and an aromatic hydrocarbon solvent; closing the feed valve, and heating the crystal powder and the solvent respectively
  • the crystal powder and solvent evaporate and the vaporized vapor temperature is controlled between 0 and 200
  • the deposition chamber is heated by a deposition heating device, and the heating temperature range is controlled at 30 ° C to 2 oo ° C.
  • the top of the deposition chamber controls the AX steam-conducting valve, and the evaporated AX vapor is distributed through the through-hole of the mesh screen and uniformly distributed in the deposition chamber.
  • the ground reaches the surface of the substrate to be deposited on which the film is to be deposited.
  • AX+BX 2 ABX 3
  • ABX 3 eg, MAPbI 3 , MAPbBr 3 , MAPbCl 3 , FAPbCl 3 .... ..etc.
  • the valve at the top of the deposition chamber is controlled to control the AX vapor conduction.
  • the solvent vapor conduction valve is controlled at the top of the deposition chamber to treat the newly formed perovskite film. After treatment, close the top of the deposition chamber to control the solvent vapor purge valve.
  • the deposition heating device and the vacuum device are turned off.
  • the deposition chamber is removed, and the deposition substrate on which the ABX 3 perovskite film is deposited is taken out from the deposition support.
  • the present invention also discloses an application of an evaporation device of a perovskite film as described above, in particular, the evaporation device of the perovskite film is used for preparing a solar cell or a perovskite film of a perovskite film.
  • the LED device or the perovskite film of the transistor is produced during the process.
  • the evaporation device of the perovskite film of the invention and the method and application thereof use the evaporation system and the deposition system in different chambers, and the evaporation system and the substrate can be separately controlled.
  • the chamber temperature of the deposition system avoids the mutual radiant heat of each heating source, allowing the evaporation temperature and deposition temperature to be more precisely controlled.
  • the evaporation material can be added with the crucible without opening the deposition chamber.
  • a mesh screen is arranged in the deposition chamber, so that the steam entering the deposition chamber is evenly distributed in all corners of the chamber, so that the evaporation airflow reaches the bulky deposition chamber, and the distribution is uniform, so that each substrate is in contact with The same airflow improves film quality and uniformity.
  • FIG. 1 is a plan view of a preferred embodiment of the present invention.
  • FIG. 2 is a plan view of the mesh screen of FIG. 1;
  • Figure 3 is a cross-sectional view of the evaporation system of Figure 1;
  • Figure 4 is a cross-sectional view showing another embodiment of the evaporation system of Figure 1;
  • FIG. 5 is a schematic view showing a manufacturing process of a perovskite film according to the present invention.
  • FIG. 6 is a schematic view showing the crystal structure of a perovskite film prepared by the present invention.
  • FIG. 7 is a schematic structural view of a perovskite solar cell of the present invention.
  • Figure 9 is a MAPbBr 3 electron diffraction pattern of Figure 8.
  • a preferred embodiment of the apparatus for evaporating a perovskite film of the present invention includes a vaporization system E (including E1 and E2) and a deposition system F, respectively, and evaporation systems El and E2, respectively.
  • the vapor deposition channels 20 and 31 communicate with the deposition system F.
  • the deposition system F includes a deposition chamber 09 in which a deposition support 07 on which a substrate 06 to be deposited is placed is disposed.
  • a mesh screen 05 is disposed between the inlets of the vapor passages 20 and 31 of the deposition chamber 09 and the substrate 06 to be deposited.
  • a plurality of through holes 1 1 for facilitating the passage of steam are provided on the mesh screen 05.
  • the vapors evaporated by the evaporation systems E1 and E2 enter the deposition chamber 09 through the vapor passages 20 and 31, respectively, and are uniformly distributed on the surface of the substrate 06 to be deposited after passing through the through holes 11 of the mesh 05.
  • a multi-layer mesh screen 05 can be provided as needed.
  • the through hole 11 of the mesh screen 05 may have any one or more of a circular shape, an elliptical shape, and a polygonal shape.
  • the shape of the through hole 11 is circular.
  • the deposition holder 07 is disposed on the bottom surface of the deposition chamber 09, and the substrate 06 to which the thin film is to be deposited is placed on the deposition holder 07 in the vertical direction.
  • the mesh screen 05 is disposed directly above the deposition support 07. Access openings for steam passages 20 and 31 Placed on top of the deposition chamber 09.
  • the vapor evaporated from the evaporation systems E1 and E2 passes through the inlet ports of the steam passages 20 and 31 at the top of the deposition chamber 0, respectively, and then passes down through the mesh screen 05 and is evenly distributed on the substrate to be deposited on the lower deposition support 07.
  • the invention separates the evaporation system E and the deposition system F into different chambers, and separately controls the temperature, which not only ensures the precise control of the temperature of each chamber, but also facilitates the addition of raw materials during the deposition process.
  • the vertical evaporation method is adopted to improve the evaporation efficiency, reduce the deposition time of the deposition substrate 06, and improve the film formation quality and uniformity of the perovskite film.
  • the deposition system F further includes a deposition heating device 08, a vacuum device, a deposition detecting device, and a nitrogen gas input pipe 27.
  • Deposition heating means 08 are disposed on both sides of the deposition chamber 09.
  • the vacuum device controls the vacuum of the deposition chamber 09.
  • a nitrogen inlet conduit port 27 is provided on the side of the deposition chamber 09.
  • the deposition detecting means includes means for detecting the temperature of the chamber in which the cavity 09 is deposited, means for vacuuming, and means for detecting the thickness of the film on the surface of the deposited substrate 06.
  • the device for detecting the temperature of the chamber of the deposition chamber 09 is a deposition chamber temperature detector 02
  • the device for detecting the degree of vacuum of the deposition chamber 09 is a deposition chamber vacuum gauge 01
  • the device for detecting the thickness of the film grown on the surface of the deposition substrate 06 is a film thickness.
  • Detector 15 The deposition heating device 08 and the deposition chamber temperature detector 02 together ensure that the temperature of the deposition chamber 09 is controlled at 30 ° C ⁇ 200 ° C.
  • the vacuum line 28 is connected to a vacuum pump to meet the local vacuum required for precipitation.
  • the film thickness detector 15 measures the film thickness of the deposited film on the surface of the deposited substrate 06.
  • the vacuum device adopts a mechanical pump and a molecular pump.
  • the mechanical pump is started.
  • the vacuum degree of the deposition chamber 09 is required to be in the range of 10 -iPa ⁇ 10 -4p a
  • the same mechanical pump and molecular pump are used to pump away the air and moisture in the deposition chamber 09, so as not to affect the substrate 06 calcium and titanium.
  • the film forming quality of the mineral film If necessary, an appropriate amount of nitrogen (N 2 ) can be applied to assist in the discharge of air and moisture.
  • the evaporation apparatus is provided with at least one set of evaporation systems, and the present invention is provided with two sets of evaporation systems E1 and E2.
  • the evaporation system E1 located on the left side of the deposition chamber 09 includes an evaporation sub-chamber 14, an evaporation heating device 21, an evaporation detecting device, and a feeding device.
  • the evaporation sub-cavity 14 is disposed outside the deposition chamber 09.
  • One end of the steam passage 31 communicates with the evaporation sub-chamber 14, and the other end thereof communicates with the deposition chamber 09.
  • the steam passage 31 is heated by the heating wire 29 to heat and heat the material 16.
  • the Evaporative heating device 21 for evaporation The sub-chamber 14 is heated, and the feed device includes a feed conduit and a feed funnel 26, and a feed valve 18 is disposed on the feed conduit.
  • the evaporation detecting means includes an evaporating temperature detector 24 for detecting the temperature of the evaporating sub-chamber and a material detector 25 for detecting the amount of material in the evaporating sub-chamber.
  • a certain amount of evaporated material is contained in the evaporation sub-chamber 14, and the evaporated material is a crystal powder AX containing a film material deposited on the surface of the substrate 06 to be deposited.
  • the evaporating temperature detector 24 measures the temperature.
  • the material detector 25 is configured to monitor the evaporative material content to replenish the evaporation sub-chamber 14 with the feedstock 03 through the feed valve 18 and the feed funnel 26.
  • a steam valve 17 is also provided on the steam passage 31.
  • the crystal powder is an AX crystal powder, wherein A is at least one of an amine group, a mercapto group or an alkali group, preferably a methylamino group (Methylammonium, ie, MA), a acetamidium (ie, FA) or an anthracene.
  • X is at least one anion of iodine (I), bromine (Br), and chlorine (C1).
  • the crystal powder AX is preferably at least one of MAX, F AX, and CsX powders.
  • E2 located to the right of the deposition chamber 09 is similar to E1.
  • Evaporation System The E2 system includes an evaporation sub-chamber 30, a temperature detector 23, a hydraulic gauge 13, a heating unit 22, a feed line, a feed valve 19, and a feed funnel 12. Since the evaporation system E2 is used to evaporate the liquid solvent 04, the steam passage 20 is not heated.
  • the solvent 04 includes at least one of an amide solvent, a sulfone/sulfoxide solvent, an ester solvent, a hydrocarbon, a halogenated hydrocarbon solvent, an alcohol solvent, a ketone solvent, an ether solvent, and an aromatic hydrocarbon solvent. .
  • the evaporation systems E1 and E2 heat the perovskite material to 0-200 ° C in the evaporation sub-chambers 14 and 30, causing it to volatilize a large amount and enter the deposition chamber through the vapor passage. After the raw materials are insufficient, the evaporation raw materials can be added through the feed funnels 12 and 26 and the feed valves 18 and 19.
  • the evaporation apparatus further includes a control system, and the control system is divided into two modes of an automatic control mode and a manual control mode.
  • the automatic control mode automatically completes the heating of the evaporation systems El, E2 and deposition system F, the vacuuming of the deposition chamber 09, the nitrogen flow through the deposition chamber 09, and the deposition process of the deposition chamber 09.
  • the manual control mode the heating of the evaporation systems El, E2 and deposition system F, the evacuation of the deposition chamber 09, the flow of nitrogen through the deposition chamber 09, and the deposition of the deposition chamber 09 are performed manually.
  • a method of using the evaporation apparatus of the perovskite film of the present invention comprises the following steps:
  • the substrate to be deposited with BX 2 attached is placed in a vertical batch on the deposition support in the deposition cavity, the chamber door of the deposition cavity is closed, and the deposition cavity is vacuumed by a vacuum device.
  • B is lead (Pb), tin (Sn), tungsten, copper, zinc, gallium, germanium, arsenic, selenium, tellurium, palladium, silver, cadmium, indium, antimony, bismuth, antimony, platinum, gold, mercury, At least one cation of ruthenium, osmium, iridium, X is iodine (I), bromine (Br), chlorine ( At least one anion in CI).
  • the above-mentioned AX crystal powder is poured into the evaporation sub-chamber 14 through the feed pipe of the evaporation system E1 located on the left side of the deposition chamber 09, and the feed valve 18 is closed.
  • the solvent is poured into the evaporation sub-chamber 30 through the feed line of the evaporation system E2 located on the right side of the deposition chamber 09, and the feed valve 19 is closed.
  • the evaporation heating devices 21 and 22 of the evaporation systems E1 and E2 respectively heat the crystal powder and the solvent to evaporate the crystal powder and the solvent, and maintain the vapor molecules evaporated by the evaporation sub-chamber E1 at a temperature ranging from 50 ° C to 200 ° C.
  • the vapor molecules that evaporate the evaporation sub-chamber E2 are maintained at a temperature range of 0 to 200 °C.
  • the deposition chamber 09 is heated by the deposition heating device 08.
  • the steam valve 17 is smashed, and the evaporated AX vapor is distributed through the through hole 11 of the mesh screen 05 in the deposition chamber.
  • the surface of the deposition substrate 06 of the film to be deposited is uniformly and uniformly reached.
  • the AX vapor molecules react with the BX 2 on the surface of the deposited substrate 06, and the ABX ⁇ titanium oxide film is slowly formed.
  • the steam valve at the top of the deposition chamber 09 is closed. After waiting for a certain time, the steam valve 10 at the top of the deposition chamber 09 is smashed to treat the newly formed perovskite film. After processing, the steam valve 10 at the top of the deposition chamber 09 is closed.
  • the deposition heating device and the vacuum device are turned off, the deposition chamber 09 is opened, and the deposition substrate 06 on which the ABX 3 perovskite film is deposited is taken out from the deposition support 07. save.
  • Example 1 Application of the evaporation apparatus of the perovskite film of the present invention to a solar cell for preparing a perovskite film. Including the following steps:
  • the deposition substrate 06 of the pre-layer (pre-layered deposition thickness is 50 nm ⁇ lum), to the evaporation system E in Fig. 3
  • a certain amount of MABr crystal powder is placed in the evaporation chamber 14 of 1, to the evaporation chamber of the evaporation system E2 in FIG.
  • a certain amount of organic solvent IPA was placed in chamber 30.
  • the deposition substrate 06 with the PbBr 2 layer (the deposition thickness of the preliminary layer is 50 nm to lum) is placed on the deposition holder 07 of the deposition chamber 09.
  • the deposition chamber 09 is evacuated, and the degree of vacuum is controlled within a certain range of 10 -4 Pa ⁇ l atm .
  • an appropriate amount of nitrogen is applied, and the deposition chamber 09 is heated until the temperature is stabilized to 70 ° C.
  • the evaporation heating device 21 After the gas pressure is stabilized to a certain value (for example, 10 4 Pa ⁇ latm), the evaporation heating device 21 starts to evaporate in the evaporation chamber 14. MABr crystal powder. After the vaporized MABr vapor stream passes through the steam passage 31 (the temperature of the steam passage 31 is stabilized by the heating of the heating wire 29 to stabilize the temperature at 50 ° C to 200 ° C), it enters the deposition chamber 09, and then the mesh screen 05 After filtration, the vapor flow uniformly reaches the surface of each of the deposition substrates 06. Here, the perovskite film on the surface of the deposited substrate begins to grow. During film growth, we monitor the film thickness through the film thickness detector 15 to understand the growth rate of the film so that we can control the film thickness and growth rate within our set range.
  • a certain value for example, 10 4 Pa ⁇ latm
  • the deposition chamber 09 is deposited, and the deposition substrate 06 on which the perovskite film is deposited is taken out from the deposition support 07.
  • FIG. 5 is a schematic view showing a manufacturing process of a perovskite thin film solar cell obtained by using the method of the present invention
  • FIG. 6 is a crystal structure of a perovskite film.
  • the perovskite film prepared by the apparatus of the present invention has a uniform crystal grain size and is relatively dense, and the crystal size is about 500 nm.
  • the peaks appearing in Fig. 9 are all characteristic peaks of perovskite and the peak shape is sharp, and there are no other peaks, indicating that the perovskite film prepared by the invention has high purity.
  • Example 2 Application of the evaporation apparatus of the perovskite film of the present invention to an LED device for preparing a perovskite film. Including the following steps:
  • a deposition substrate 06 of a preset layer (preposed layer having a deposition thickness of 50 nm to lum) is loaded with a certain amount of MAI crystal powder into the evaporation chamber 14 of the evaporation system E 1 in FIG. 3, and evaporated to FIG.
  • a certain amount of organic solvent IPA is placed in the evaporation chamber 30 of system E2.
  • the deposition substrate 06 is placed on the deposition support 07 of the deposition chamber 09.
  • the deposition chamber 09 is evacuated, and the degree of vacuum is controlled within a certain range of 10 -4 Pa ⁇ l atm . After that, an appropriate amount of nitrogen is applied, and the deposition chamber 09 is heated until the temperature is stabilized to 70 ° C.
  • the evaporation heating device 21 starts to evaporate into the evaporation chamber 14. MAI crystal powder. After the vaporized MAI vapor stream passes through the steam passage 31 (the temperature of the steam passage 31 is stabilized by the heating of the heating wire 29 to stabilize the temperature at 50 ° C ⁇ 200 ° C) into the deposition chamber 09, and then by the mesh screen 05 After filtration, the vapor flow uniformly reaches the surface of each of the deposition substrates 06. Here, the perovskite film on the surface of the deposited substrate begins to grow. During film growth, we monitor the film thickness through the film thickness detector 15 to understand the film growth rate so that we can control the film thickness and growth rate within our set range.
  • a certain value for example, 10 -4 Pa ⁇ latm
  • the deposition chamber 09 is deposited, and the deposition substrate 06 on which the perovskite film is deposited is taken out from the deposition support 07.
  • Example 3 Application of the evaporation apparatus of the perovskite film of the present invention to a transistor for preparing a perovskite film. Including the following steps:
  • a deposition substrate 06 of a preset layer (preposed layer having a deposition thickness of 50 nm to lum) is loaded with a certain amount of MAC1 crystal powder into the evaporation chamber 14 of the evaporation system E1 in FIG. 3, and evaporated to FIG.
  • a certain amount of organic solvent IPA is placed in the evaporation chamber 30 of system E2.
  • the deposition substrate 06 is placed on the deposition support 07 of the deposition chamber 09.
  • the deposition chamber 09 is evacuated, and the degree of vacuum is controlled within a certain range of 10 - 4 P a ⁇ latm. After that, an appropriate amount of nitrogen is applied, and the deposition chamber 09 is heated until the temperature is stabilized to 70 ° C.
  • the evaporation heating device 21 starts to evaporate into the evaporation chamber 14.
  • MAC1 crystal powder After the vaporized MAC1 vapor stream passes through the steam passage 31 (the temperature of the steam passage 31 is stabilized by the heating of the heating wire 29 to stabilize the temperature at 50 ° C ⁇ 200 ° C) into the deposition chamber 09, and then by the mesh screen 05 After filtration, the vapor flow uniformly reaches the surface of each of the deposition substrates 06.
  • the perovskite film on the surface of the deposited substrate begins to grow.
  • we monitor the film thickness through the film thickness detector 15 we monitor the film thickness through the film thickness detector 15 to understand the film growth rate so that we can control the film thickness and growth rate within our set range.
  • the deposition chamber 09 is deposited, and the deposition substrate 06 on which the perovskite film is deposited is taken out from the deposition support 07.
  • the deposition chamber 09 is deposited, and the deposition substrate 06 on which the perovskite film is deposited is taken out from the deposition support 07.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种钙钛矿薄膜的蒸发设备，包括分开设置的蒸发系统(E，E1，E2)和沉积系统(F)，蒸发系统(E1,E2)和沉积系统(F)通过蒸汽通道(20,31)相互连通，沉积系统(F)包括沉积腔体(09)，在沉积腔体(09)内设置有放置待沉积基板(06)的沉积支架(07)，在沉积腔体(09)的蒸汽通道(20,31)进入口与待沉积基板(06)之间设置有网筛(05)，在网筛(05)上设置有多个便于蒸汽通过的通孔(11)，蒸发系统(E1,E2)蒸发的蒸汽分别通过蒸汽通道(20,31)进入沉积腔体(09)，并经过网筛(05)的通孔(11)后均匀地分布在待沉积基板(06)的表面上。还包括一种钙钛矿薄膜的蒸发设备的使用方法和使用方法的应用。

Description

发明名称：一种钙钛矿薄膜的蒸发设备及其使用方法和应用 技术领域
[0001] 本发明涉及一种钙钛矿薄膜的蒸发设备及其使用方法和应用。
[]
背景技术
[0002] 钙钛矿太阳能电池作为第三代光伏电池， 具备很高的转换效率和很低的原材料 成本。 目前， 科研院所所采用的钙钛矿电池的生产方法均为溶液涂布法。 该类 方法的核心是将钙钛矿的前驱体溶液均匀的涂布在电子或者空穴传输层上， 然 后在钙钛矿层上再层积相应的空穴或者电子传输层。 然而， 应用溶液涂布法制 备的大面积太阳能电池的效率低下， 是因为其关键的钙钛矿材料层难以在大尺 度的面积上保持均匀， 这直接导致大面积的钙钛矿太阳能电池的性能很差， 是 目前难以工业化的主要原因。
[0003] 为了克服溶液涂布法的所产生的困难， 也可以采用蒸镀的办法镀膜钙钛矿半导 体层。 目前， 使用蒸镀法制备钙钛矿的设备， 基本上是在一个腔体放 1~2片基板 ， 然后对基板进行钙钛矿薄膜的沉积。 这样增加了单片电池的蒸发吋间， 极大 地降低了沉积效率。
[0004] 另外， 部分设备也采用了一个腔体同吋沉积十几片基板， 但它们简单地采用了 化学气相层积的设备， 将蒸发源和基板放在了同一腔室内。 蒸发源在腔室左侧 ， 基板则垂直依次放置于腔室右侧。 左侧通氮气 （N 2) ， 使氮气和蒸汽一起向 右侧基板运动。 由于先接触到基板的蒸汽先反应掉， 使后侧蒸汽浓度逐渐降低 ， 这种情况会随着右侧基板数量的增多而愈加严重， 导致最右侧的基板反应不 充分， 造成最左侧基板与最右侧基板的沉积膜厚不均匀一致。 而且， 同一腔室 的两加热源会相互辐射热能， 使蒸发源和基板的实际温度和设置温度偏差大， 不利于腔室的温度控制。 另一方面， 将蒸发源和基板放在同一个腔室也不便于 在蒸发过程中添加蒸汽原料。
[0005] 另外还有部分设备， 采用在一个密闭的腔体舍里设置平行加热板形式。 上加热 板喷'？西甲基碘化胺 ( methy lammonium iodide,
MAI) 或者甲脒氢碘酸盐 （formamidinium iodide,
FAI) ， 下加热板安放沉积有 BX ^ 基板。 这种设备， 由于两加热板在同一腔室 会相互辐射热能， 不便精确控制腔室温度。 蒸发物质喷洒在上加热板的量也有 限， 沉积过程中不能加料， 使沉积一次或者几次就得幵腔加料。 另一方面， 蒸 发物在受热蒸发吋形成的蒸气向上运动， 由于连接真空泵的管道在腔体顶部， 使顶部气压低， 促使蒸汽分子向上扩散， 使实际到达基板的量比较少， 不利于 沉积膜厚的控制。
技术问题
[0006] 本发明所要解决的技术问题在于， 提供一种钙钛矿薄膜的蒸发设备及其使用方 法和应用， 在一个腔室里可以同吋沉积十几片， 甚至几十片电池， 提高了钙钛 矿薄膜沉积效率， 降低了单片电池的沉积吋间。
问题的解决方案
技术解决方案
[0007] 本发明是这样实现的， 提供一种钙钛矿薄膜的蒸发设备， 包括分幵设置的蒸发 系统和沉积系统， 蒸发系统和沉积系统通过蒸汽通道相互连通， 蒸发系统包括 沉积腔体， 在沉积腔体内设置有放置待沉积基板的沉积支架， 在沉积腔体的蒸 汽通道进入口与待沉积基板之间设置有网筛， 在网筛上设置有多个便于蒸汽通 过的通孔， 蒸发系统蒸发的蒸汽通过蒸汽通道进入沉积腔体， 并经过网筛的通 孔后均匀地分布在待沉积基板的表面上； 在蒸汽通道上还设置了蒸汽阀门。
[0008] 进一步地， 沉积支架设置在沉积腔体的底面上， 网筛设置在沉积支架正上方， 蒸汽通道进入口设置在沉积腔体的顶部， 从蒸发系统蒸发的蒸汽通过位于沉积 腔体的顶部的蒸汽通道进入口后， 向下经过网筛再均匀地分布在下方沉积支架 上的待沉积基板的表面。
[0009] 进一步地， 沉积系统还包括沉积加热装置、 真空装置、 沉积检测装置和氮气输 入管道， 沉积加热装置设置在沉积腔体的两侧面， 真空装置控制沉积腔体的真 空度， 沉积检测装置包括检测沉积腔体的腔室温度的装置、 真空度的装置以及 检测沉积基板表面的薄膜生长厚度的装置， 氮气输入管道口设置在沉积腔体的 侧面。
[0010] 进一步地， 蒸发设备至少设有一套蒸发系统， 蒸发系统包括蒸发副腔、 蒸发加 热装置、 蒸发检测装置和进料装置， 蒸发副腔设置在沉积腔体的外侧， 蒸汽通 道的一端与蒸发副腔相连通， 其另一端与沉积腔体相连通， 蒸发加热装置给蒸 发副腔加热， 进料装置包括进料管道和进料漏斗， 在进料管道上设置有进料阀 门； 蒸发检测装置包括检测蒸发副腔温度的蒸发温度探测器和检测蒸发副腔内 物料多少的物料检测器； 在蒸发副腔内容纳了一定量的蒸发物料， 蒸发物料为 含有待沉积基板表面沉积薄膜物质的晶体粉末和 /或溶剂。
[0011] 进一步地， 在蒸汽通道上设置有加热装置。
[0012] 进一步地， 蒸发设备还包括控制系统， 控制系统分为自动控制模式和手动控制 模式两种模式， 自动控制模式会自动完成蒸发系统和沉积系统的加热、 沉积腔 体的抽真空、 沉积腔体的通氮气、 蒸汽阀门的幵关和沉积腔体的沉积过程， 在 手动控制模式下， 通过手动完成蒸发系统和沉积系统的加热、 沉积腔体的抽真 空、 沉积腔体的通氮气、 蒸汽阀门的幵关和沉积腔体的沉积过程。
[0013] 进一步地， 网筛的通孔的形状至少为圆形、 椭圆形及多边形中的一种。
[0014] 本发明还公幵了一种如前述的钙钛矿薄膜的蒸发设备的使用方法， 包含如下步 骤：
[0015] 第一步骤， 将附着有 ΒΧ ^ 待沉积基板批量放入沉积腔体中的沉积支架上， 关 闭沉积腔体的腔室门， 幵始利用真空装置对沉积腔体抽真空， 其中， Β为铅 (Pb) 、 锡 (Sn)、 钨、 铜、 锌、 镓、 锗、 砷、 硒、 铑、 钯、 银、 镉、 铟、 锑、 锇、 铱、 铂、 金、 汞、 铊、 铋、 钋中至少一种阳离子， X为碘 （I) 、 溴 (Br)、 氯 (C1)中至 少一种阴离子。
[0016] 第二步骤， 待沉积腔体的腔室到达一定真空度后， 幵始充氮气； 气压控制在 10 -4 Pa ~ latm。
[0017] 第三步骤， 将晶体粉末通过位于沉积腔体左侧的蒸发系统的进料装置灌入到其 蒸发副腔中， 晶体粉末为 AX晶体粉末， 其中， A为胺基 (如： 甲胺基 MA；)、 脒基 (如： 乙脒基 FA) 或者碱族中至少一种； 将溶剂灌入到位于沉积腔体右侧的另 一蒸发系统的蒸发副腔中， 其中， 溶剂包括酰胺类溶剂、 砜类 /亚砜类溶剂、 酯 类溶剂、 烃类、 ¾代烃类溶剂、 醇类溶剂、 酮类溶剂、 醚类溶剂和芳香烃溶剂 中至少一种； 关闭进料阀门， 幵启蒸发加热装置分别给晶体粉末和溶剂加热使 得晶体粉末和溶剂蒸发， 并使得蒸发的蒸汽温度控制在 0~200°C。
[0018] 第四步骤， 通过沉积加热装置给沉积腔体加热， 加热的温度范围控制在 30°C~2 oo°c。 待沉积腔体的腔室到达一定温度和一定抽真空吋间后， 打幵沉积腔体顶部 控制 AX蒸汽导通的阀门， 蒸发的 AX蒸汽透过网筛的通孔分布于沉积腔体并均匀 地到达待沉积薄膜的待沉积基板表面。 这吋， 蒸汽中的 AX蒸汽分子与沉积基板 表面的 BX 2反应 (反应公式： AX+BX 2=ABX 3)， ABX 3(如： MAPbI 3、 MAPbBr 3 、 MAPbCl 3、 FAPbCl 3......等等)钙钛矿薄膜也就幵始慢慢形成。
[0019] 第五步骤， 经过一段吋间， 待钙钛矿薄膜形成后， 关闭沉积腔体顶部控制 AX 蒸汽导通的阀门。 等待一定吋间后， 打幵沉积腔体顶部控制溶剂蒸汽导通阀门 ， 对刚形成的钙钛矿薄膜进行处理。 处理完后， 关闭沉积腔体顶部控制溶剂蒸 汽导通阀门。
[0020] 第六步骤， 沉积基板的沉积过程完成后， 关闭沉积加热装置和真空装置。 幵启 沉积腔体， 将沉积有 ABX 3钙钛矿薄膜的沉积基板从沉积支架上取出保存。
[0021] 本发明还公幵了一种如前述的钙钛矿薄膜的蒸发设备的应用， 具体是把该钙钛 矿薄膜的蒸发设备用于制备钙钛矿薄膜的太阳能电池或钙钛矿薄膜的 LED器件或 钙钛矿薄膜的晶体管的生产过程中。
发明的有益效果
有益效果
[0022] 与现有技术相比， 本发明的钙钛矿薄膜的蒸发设备及其使用方法和应用， 将蒸 发系统和沉积系统分置于不同的腔室， 且可以单独控制蒸发系统和基板所在沉 积系统的腔室温度， 避免了各个加热源的相互辐射热能， 使蒸发温度和沉积温 度都得到更加精确的控制。 而且， 在沉积过程中， 可以随吋添加蒸发原料而不 用幵启沉积腔体。 另一方面， 在沉积腔体里设置了网筛， 使进入沉积腔体的蒸 汽均匀分布于腔室的各个角落， 使蒸发气流到达庞大的沉积腔室吋分布均匀， 使每个基板接触到的气流相同， 改善了成膜质量和均匀性。
对附图的简要说明 附图说明
[0023] 图 1为本发明一较佳实施例的平面示意图；
[0024] 图 2为图 1中网筛的府视图；
[0025] 图 3为图 1中蒸发系统的剖面图；
[0026] 图 4为图 1中蒸发系统另一种实施例的剖面图；
[0027] 图 5为本发明的钙钛矿薄膜制造流程示意图；
[0028] 图 6为本发明制备的钙钛矿薄膜的晶体结构示意图；
[0029] 图 7为本发明的一种钙钛矿太阳能电池的结构示意图；
[0030] 图 8为利用本发明的使用方法得到的 MAPbBr 3薄膜的表面形貌；
[0031] 图 9为图 8的 MAPbBr 3电子衍射图；
[0032] 图 10为利用本发明的使用方法得到的钙钛矿太阳能电池的典型/ -V曲线。
实施该发明的最佳实施例
本发明的最佳实施方式
[0033] 为了使本发明所要解决的技术问题、 技术方案及有益效果更加清楚明白， 以下 结合附图及实施例， 对本发明进行进一步详细说明。 应当理解， 此处所描述的 具体实施例仅仅用以解释本发明， 并不用于限定本发明。
[0034] 请参照图 1所示， 本发明钙钛矿薄膜的蒸发设备的较佳实施例， 包括分幵设置 的蒸发系统 E (包括 E1和 E2)和沉积系统 F， 蒸发系统 El和 E2分别通过蒸汽通道 20 和 31与沉积系统 F相互连通。 沉积系统 F包括沉积腔体 09， 在沉积腔体 09内设置 有放置待沉积基板 06的沉积支架 07。 在沉积腔体 09的蒸汽通道 20和 31进入口与 待沉积基板 06之间设置有网筛 05。 在网筛 05上设置有多个便于蒸汽通过的通孔 1 1。 蒸发系统 E1和 E2蒸发的蒸汽分别通过蒸汽通道 20和 31进入沉积腔体 09， 并经 过网筛 05的通孔 11后均匀地分布在待沉积基板 06的表面上。 根据需要可以设置 多层网筛 05。
[0035] 请参照图 2所示， 网筛 05的通孔 11的形状可为圆形、 椭圆形及多边形中的任意 一种或几种。 在本发明中， 通孔 11的形状为圆形。
[0036] 沉积支架 07设置在沉积腔体 09的底面上， 待沉积薄膜的基板 06竖直方向放置在 沉积支架 07上。 网筛 05设置在沉积支架 07正上方。 蒸汽通道 20和 31的进入口设 置在沉积腔体 09的顶部。 从蒸发系统 E1和 E2蒸发的蒸汽分别通过位于沉积腔体 0 9的顶部的蒸汽通道 20和 31的进入口后， 向下经过网筛 05再均匀地分布在下方沉 积支架 07上的待沉积基板 06的表面。
[0037] 现有技术的钙钛矿太阳能电池沉积设备还难以保证蒸发气流均匀到达沉积基板 06的沉积表面。 本发明将蒸发系统 E和沉积系统 F分置于不同的腔室， 单独控温 ， 既保证了各腔室的温度的精确控制， 也方便了沉积过程中添加原料。 同吋采 用垂直蒸发方式， 提高了蒸发效率， 降低了沉积基板 06的沉积吋间， 改善了钙 钛矿薄膜的成膜质量和均匀性。
[0038] 沉积系统 F还包括沉积加热装置 08、 真空装置、 沉积检测装置和氮气输入管道 2 7。 沉积加热装置 08设置在沉积腔体 09的两侧部。 真空装置控制沉积腔体 09的真 空度。 氮气输入管道口 27设置在沉积腔体 09的侧面。 沉积检测装置包括检测沉 积腔体 09的腔室温度的装置、 真空度的装置以及检测沉积基板 06表面的薄膜生 长厚度的装置。 检测沉积腔体 09的腔室温度的装置为沉积腔温度探测器 02， 检 测沉积腔体 09的真空度的装置为沉积腔真空计 01， 检测沉积基板 06表面的薄膜 生长厚度的装置为薄膜厚度检测器 15。 沉积加热装置 08和沉积腔温度探测器 02 共同保证沉积腔体 09的温度控制在 30°C~200°C。 真空管道 28跟真空泵相连， 满足 沉淀所需的本地真空。 薄膜厚度检测器 15实吋检测沉积基板 06表面的沉积薄膜 的薄膜厚度。
[0039] 真空装置采用机械泵和分子泵， 当沉积腔体 09的真空度要求在 10 -iPa~latm范 围吋， 幵启机械泵。 当沉积腔体 09的真空度要求在 10 -iPa~10 -4pa范围吋， 同吋 幵启机械泵和分子泵， 将沉积腔体 09内的空气和水分抽走， 以免影响基板 06钙 钛矿薄膜的成膜质量。 在必要吋， 可以通适量的氮气 （N 2) ， 以辅助排出空气 和水分。
[0040] 蒸发设备至少设有一套蒸发系统， 本发明设有两套蒸发系统 E1和 E2。 请同吋参 照图 1、 图 3和图 4所示， 位于沉积腔体 09左侧的蒸发系统 E1包括蒸发副腔 14、 蒸 发加热装置 21、 蒸发检测装置和进料装置。 蒸发副腔 14设置在沉积腔体 09的外 侧。 蒸汽通道 31的一端与蒸发副腔 14相连通， 其另一端与沉积腔体 09相连通。 蒸汽通道 31通过加热丝 29加热和保温材料 16进行保温。 蒸发加热装置 21给蒸发 副腔 14加热， 进料装置包括进料管道和进料漏斗 26， 在进料管道上设置有进料 阀门 18。 蒸发检测装置包括检测蒸发副腔温度的蒸发温度探测器 24和检测蒸发 副腔内物料多少的物料检测器 25。 在蒸发副腔 14内容纳了一定量的蒸发物料， 蒸发物料为含有待沉积基板 06表面沉积薄膜物质的晶体粉末 AX。 蒸发温度探测 器 24实吋测温。 物料探测器 25实吋监控蒸发物料含量， 以便通过进料阀门 18和 进料漏斗 26给蒸发副腔 14补充原料 03。 在蒸汽通道 31上还设置了蒸汽阀门 17。
[0041] 晶体粉末为 AX晶体粉末， 其中， A为胺基、 脒基或者碱族中至少一种， 优选为 甲胺基 (Methylammonium, 即 MA)、 乙脒基 （Formamidinium, 即 FA) 或铯， X 为碘 （I) 、 溴 （Br) 、 氯 (C1)中至少一种阴离子。 晶体粉末 AX优选为 MAX、 F AX、 CsX粉末的至少一种。
[0042] 位于沉积腔体 09右侧的另一蒸发系统 E2与 E1类似。 蒸发系统 E2系统包括蒸发 副腔 30、 温度探测器 23、 液压计 13、 加热装置 22、 进料管道、 进料阀门 19、 进 料漏斗 12。 由于蒸发系统 E2用于蒸发液体溶剂 04， 蒸汽通道 20不用加热。
[0043] 溶剂 04包括酰胺类溶剂、 砜类 /亚砜类溶剂、 酯类溶剂、 烃类、 卤代烃类溶剂 、 醇类溶剂、 酮类溶剂、 醚类溶剂和芳香烃溶剂中至少一种。
[0044] 蒸发系统 E1和 E2将钙钛矿原料在蒸发副腔 14和 30里加热到 0~200°C， 使其大量 挥发， 通过蒸汽通道进入沉积腔室。 待原料不足吋， 可以通过进料漏斗 12和 26 和进料阀门 18和 19添加蒸发原料。
[0045] 蒸发设备还包括控制系统， 控制系统分为自动控制模式和手动控制模式两种模 式。 自动控制模式会自动完成蒸发系统 El、 E2和沉积系统 F的加热、 沉积腔体 09 的抽真空、 沉积腔体 09的通氮气和沉积腔体 09的沉积过程。 在手动控制模式下 ， 通过手动完成蒸发系统 El、 E2和沉积系统 F的加热、 沉积腔体 09的抽真空、 沉 积腔体 09的通氮气和沉积腔体 09的沉积过程。
[0046] 本发明的一种如前述的钙钛矿薄膜的蒸发设备的使用方法， 包含如下步骤：
[0047] 第一步骤， 将附着有 BX 2的待沉积基板垂直批量放入沉积腔体中的沉积支架上 ， 关闭沉积腔体的腔室门， 幵始利用真空装置对沉积腔体抽真空。 其中， B为铅 (Pb)、 锡 (Sn)、 钨、 铜、 锌、 镓、 锗、 砷、 硒、 铑、 钯、 银、 镉、 铟、 锑、 锇、 铱、 铂、 金、 汞、 铊、 铋、 钋中至少一种阳离子， X为碘 （I) 、 溴 （Br) 、 氯（ CI)中至少一种阴离子。
[0048] 第二步骤， 待沉积腔体的腔室到达 10 - 4Pa~latm真空度后， 幵始充氮气 (N 2)， 使 整个腔室处于氮气的保护氛围中。
[0049] 第三步骤， 将上述的 AX晶体粉末经过位于沉积腔体 09左侧的蒸发系统 E1的进 料管道灌入蒸发副腔 14中存储， 关闭进料阀门 18。 将溶剂经过位于沉积腔体 09 右侧的蒸发系统 E2的进料管道灌入蒸发副腔 30中存储， 关闭进料阀门 19。 幵启 蒸发系统 E1和 E2的蒸发加热装置 21和 22分别给晶体粉末和溶剂加热使得晶体粉 末和溶剂蒸发， 并使得蒸发副腔 E1蒸发的蒸汽分子保持在 50°C~200°C温度范围 ， 使得蒸发副腔 E2蒸发的蒸汽分子保持在 0~200°C温度范围。
[0050] 第四步骤， 通过沉积加热装置 08给沉积腔体 09加热。 待沉积腔体 09的腔室到达 30°C~200°C温度范围和一定抽真空吋间后， 将蒸汽阀门 17打幵， 蒸发的 AX蒸汽 透过网筛 05的通孔 11分布于沉积腔体并均匀地到达待沉积薄膜的沉积基板 06表 面。 这吋， AX蒸汽分子与沉积基板 06表面的 BX 2反应， ABX ^钛矿薄膜也就 幵始慢慢形成。
[0051] 第五步骤， 经过一段吋间， 钙钛矿形成后， 关闭沉积腔体 09顶部的蒸汽阀门 17 。 等待一定吋间后， 打幵沉积腔体 09顶部的蒸汽阀门 10， 对刚形成的钙钛矿薄 膜进行处理。 处理完后， 关闭沉积腔体 09顶部的蒸汽阀门 10。
[0052] 第六步骤， 沉积基板 06的沉积过程完成后， 关闭沉积加热装置和真空装置， 幵 启沉积腔体 09， 将沉积有 ABX 3钙钛矿薄膜的沉积基板 06从沉积支架 07上取出保 存。
本发明的实施方式
[0053] 下面结合具体实施例说明本发明的钙钛矿薄膜的蒸发设备的应用。
[0054] 实施例一： 本发明的钙钛矿薄膜的蒸发设备在制备钙钛矿薄膜的太阳能电池上 的应用。 包括如下步骤：
[0055] 1.预先准备有附有 PbBr 2
预置层 （预置层的沉积厚度为 50nm~lum) 的沉积基板 06， 向图 3中的蒸发系统 E
1的蒸发腔室 14内放入一定量的 MABr晶体粉末， 向图 4中的蒸发系统 E2的蒸发腔 室 30内放入一定量的有机溶剂 IPA。 沉积腔室 09加热到 70°C后， 将附有 PbBr 2 置层 （预置层的沉积厚度为 50nm~lum) 的沉积基板 06放入沉积腔室 09的沉积支 架 07上。 然后， 沉积腔室 09抽真空， 真空度控制在一定的范围 10 -4Pa~latm。 之 后， 通适量的氮气， 沉积腔室 09加热待温度稳定到 70°C， 气压稳定到一定值 （如 10 4Pa~latm) 后， 幵启蒸发加热装置 21幵始蒸发蒸发腔室 14内的 MABr晶体粉末 。 蒸发的 MABr蒸汽流通过蒸汽通道 31后 （此吋蒸汽通道 31的温度通过加热丝 29 的加热作用使其温度稳定在 50°C~200°C) 进入沉积腔体 09中， 再由网筛 05过滤后 ， 蒸汽流均匀到达各个沉积基板 06的表面。 这吋， 沉积基板表面的钙钛矿薄膜 幵始生长。 在薄膜生长过程中， 我们通过薄膜厚度检测器 15实吋监测薄膜厚度 ， 了解薄膜的生长速率， 以便于我们将膜厚和生长速率控制在我们设定的范围
[0056] 2.钙钛矿薄膜生长完后， 我们通适量的异丙醇蒸汽 (即 IPA蒸汽)， 以清洗掉钙 钛矿薄膜表面多余的 MABr。 当沉积腔体 09经过多批次的沉积以后， 发现 MABr 不足， 我们还可以在不打幵沉积腔体 09的情况下， 添加蒸发 MABr晶体粉末原料
[0057] 3.
待钙钛矿薄膜生长完后， 幵启沉积腔体 09， 将沉积有钙钛矿薄膜的沉积基板 06 从沉积支架 07上取出保存。
[0058] 4.沉积 0~200nm的电子传输层 PCBM。 待 PCBM溶液配好后， 在氮气氛围里在 钙钛矿表面刮涂一层厚度为 0~200nm的 PCBM, 之后置于 0~200°C的加热平台上 烘干。
[0059] 5.沉积背电极氟化锂和银。 将沉积基板 06置于蒸发设备中， 蒸发 0~50nm的氟 化锂和 0~300nm的银。 这样， 一个完整的 MAPbBr 3钙钛矿薄膜太阳能电池就制 作完成。
[0060] 附图 5是我们利用本发明的使用方法得到的钙钛矿薄膜太阳能电池的制造过程 示意图， 附图 6钙钛矿薄膜晶体结构。 通过以上步骤， 我们得到了 MAPbBr 5钛 矿薄膜和钙钛矿薄膜。 我们列出了钙钛矿薄膜的结构示意图 （图 7) 、 MAPbBr 3 的表面形貌 （图 8) 、 MAPbBr 3电子衍射图 （图 9) 和我们得到的电池典型 J-V曲 线图 （图 10) 。
[0061] 从图 8可以看出， 利用本发明的设备制备的钙钛矿薄膜的晶体颗粒大小均匀， 较为致密， 晶体尺寸在 500nm左右。 在图 9可以看出， 图 9中出现的峰都为钙钛矿 的特征峰且峰形尖锐， 而没有其他杂峰， 表明本发明制备的钙钛矿薄膜纯度高
, 结晶度局0
[0062] 实施例二： 本发明的钙钛矿薄膜的蒸发设备在制备钙钛矿薄膜的 LED器件上的 应用。 包括如下步骤：
[0063] 1.预先准备有附有 Pbl 2
预置层 （预置层的沉积厚度为 50nm~lum) 的沉积基板 06， 向图 3中的蒸发系统 E 1的蒸发腔室 14内放入一定量的 MAI晶体粉末， 向图 4中的蒸发系统 E2的蒸发腔 室 30内放入一定量的有机溶剂 IPA。 将沉积基板 06放入沉积腔室 09的沉积支架 07 上。 然后， 沉积腔室 09抽真空， 真空度控制在一定的范围 10 -4Pa~latm。 之后， 通适量的氮气， 沉积腔室 09加热待温度稳定到 70°C， 气压稳定到一定值 （如 10 -4 Pa~latm) 后， 幵启蒸发加热装置 21幵始蒸发蒸发腔室 14内的 MAI晶体粉末。 蒸 发的 MAI蒸汽流通过蒸汽通道 31后 （此吋蒸汽通道 31的温度通过加热丝 29的加热 作用使其温度稳定在 50°C~200°C) 进入沉积腔体 09中， 再由网筛 05过滤后， 蒸汽 流均匀到达各个沉积基板 06的表面。 这吋， 沉积基板表面的钙钛矿薄膜幵始生 长。 在薄膜生长过程中， 我们通过薄膜厚度检测器 15实吋监测薄膜厚度， 了解 薄膜的生长速率， 以便于我们将膜厚和生长速率控制在我们设定的范围。
[0064] 2.钙钛矿薄膜生长完后， 我们通适量的异丙醇蒸汽 (即 IPA蒸汽)， 以清洗掉钙 钛矿薄膜表面多余的 MAI。 当沉积腔体 09经过多批次的沉积以后， 发现 MAI不足 ， 我们还可以在不打幵沉积腔体 09的情况下， 添加蒸发 MAI晶体粉末原料。
[0065] 3.
待钙钛矿薄膜生长完后， 幵启沉积腔体 09， 将沉积有钙钛矿薄膜的沉积基板 06 从沉积支架 07上取出保存。
[0066] 4.沉积 0~200nm的电子传输层 ZnO。 待 ZnO溶液配好后， 在氮气氛围里在钙钛 矿表面刮涂一层厚度为 0~200nm的 ZnO， 之后置于 0~500°C的加热平台上烘干。
[0067] 5.沉积背电极铝膜。 将沉积基板 06置于蒸发设备中， 蒸发 0~300nm的铝膜。 这 样， 一个完整的 MAPbl 3钙钛矿薄膜 LED器件就制作完成。
[0068] 实施例三： 本发明的钙钛矿薄膜的蒸发设备在制备钙钛矿薄膜的晶体管上的应 用。 包括如下步骤：
[0069] 1.预先准备有附有 PbCl 2
预置层 （预置层的沉积厚度为 50nm~lum) 的沉积基板 06， 向图 3中的蒸发系统 E 1的蒸发腔室 14内放入一定量的 MAC1晶体粉末， 向图 4中的蒸发系统 E2的蒸发腔 室 30内放入一定量的有机溶剂 IPA。 将沉积基板 06放入沉积腔室 09的沉积支架 07 上。 然后， 沉积腔室 09抽真空， 真空度控制在一定的范围 10 -4Pa~latm。 之后， 通适量的氮气， 沉积腔室 09加热待温度稳定到 70°C， 气压稳定到一定值 （如 10 -4 Pa~latm) 后， 幵启蒸发加热装置 21幵始蒸发蒸发腔室 14内的 MAC1晶体粉末。 蒸发的 MAC1蒸汽流通过蒸汽通道 31后 （此吋蒸汽通道 31的温度通过加热丝 29的 加热作用使其温度稳定在 50°C~200°C) 进入沉积腔体 09中， 再由网筛 05过滤后， 蒸汽流均匀到达各个沉积基板 06的表面。 这吋， 沉积基板表面的钙钛矿薄膜幵 始生长。 在薄膜生长过程中， 我们通过薄膜厚度检测器 15实吋监测薄膜厚度， 了解薄膜的生长速率， 以便于我们将膜厚和生长速率控制在我们设定的范围。
[0070] 2.钙钛矿薄膜生长完后， 我们通适量的异丙醇蒸汽 (即 IPA蒸汽)， 以清洗掉钙 钛矿薄膜表面多余的 MAC1。 当沉积腔体 09经过多批次的沉积以后， 发现 MAC1 不足， 我们还可以在不打幵沉积腔体 09的情况下， 添加蒸发 MAC1晶体粉末原料
[0071] 3.
待钙钛矿薄膜生长完后， 幵启沉积腔体 09， 将沉积有钙钛矿薄膜的沉积基板 06 从沉积支架 07上取出保存。
[0072] 3.
待钙钛矿薄膜生长完后， 幵启沉积腔体 09， 将沉积有钙钛矿薄膜的沉积基板 06 从沉积支架 07上取出保存。
[0073] 4.沉积 0~200nm的电子传输层 ZrO。 待 ZrO溶液配好后， 在氮气氛围里在钙钛矿 表面刮涂一层厚度为 0~200nm的 ZrO， 之后置于 0~500°C的加热平台上烘干。
[0074] 5.沉积背电极金膜。 将沉积基板 06置于蒸发设备中， 蒸发 0~300nm的金膜。 这 样， 一个完整的 MAPbCl 3钙钛矿薄膜晶体管就制作完成。
[0075] 以上所述仅为本发明的较佳实施例而已， 并不用以限制本发明， 凡在本发明的 精神和原则之内所作的任何修改、 等同替换和改进等， 均应包含在本发明的保 护范围之内。
工业实用性
[0076] 在此处键入工业实用性描述段落。
序列表自由内容
[0077] 在此处键入序列表自由内容描述段落。

Claims

权利要求书
[权利要求 1] 一种钙钛矿薄膜的蒸发设备， 其特征在于， 包括分幵设置的蒸发系统 和沉积系统， 所述蒸发系统和沉积系统通过蒸汽通道相互连通， 所述 沉积系统包括沉积腔体， 在所述沉积腔体内设置有放置待沉积基板的 沉积支架， 在所述沉积腔体的蒸汽通道进入口与待沉积基板之间设置 有网筛， 在所述网筛上设置有多个便于蒸汽通过的通孔， 所述蒸发系 统蒸发的蒸汽通过蒸汽通道进入沉积腔体， 并经过网筛的通孔后均匀 地分布在待沉积基板的表面上； 在所述蒸汽通道上还设置了蒸汽阀门
[权利要求 2] 如权利要求 1所述的钙钛矿薄膜的蒸发设备， 其特征在于， 所述沉积 支架设置在沉积腔体的底面上， 所述网筛设置在沉积支架正上方， 所 述蒸汽通道进入口设置在沉积腔体的顶部， 从所述蒸发系统蒸发的蒸 汽通过位于沉积腔体的顶部的蒸汽通道进入口后， 向下经过网筛再均 匀地分布在下方沉积支架上的待沉积基板的表面。
[权利要求 3] 如权利要求 1或 2所述的钙钛矿薄膜的蒸发设备， 其特征在于， 所述沉 积系统还包括沉积加热装置、 真空装置、 沉积检测装置和氮气输入管 道， 所述沉积加热装置设置在沉积腔体的两侧， 所述真空装置控制沉 积腔体的真空度， 所述沉积检测装置包括检测沉积腔体的腔室温度的 装置、 真空度的装置以及检测沉积基板表面的薄膜生长厚度的装置， 所述氮气输入管道口设置在沉积腔体的侧面。
[权利要求 4] 如权利要求 3所述的钙钛矿薄膜的蒸发设备， 其特征在于， 所述蒸发 设备至少设有一套蒸发系统， 所述蒸发系统包括蒸发副腔、 蒸发加热 装置、 蒸发检测装置和进料装置， 所述蒸发副腔设置在沉积腔体的外 侧， 所述蒸汽通道的一端与蒸发副腔相连通， 其另一端与沉积腔体相 连通， 所述蒸发加热装置给蒸发副腔加热， 所述进料装置包括进料管 道和进料漏斗， 在所述进料管道上设置有进料阀门； 所述蒸发检测装 置包括检测蒸发副腔温度的蒸发温度探测器和检测蒸发副腔内物料多 少的物料检测器； 在所述蒸发副腔内容纳了一定量的蒸发物料， 所述 蒸发物料为含有待沉积基板表面沉积薄膜物质的晶体粉末和 /或溶剂
[权利要求 5] 如权利要求 4所述的钙钛矿薄膜的蒸发设备， 其特征在于， 在所述蒸 汽通道上设置有加热装置。
[权利要求 6] 如权利要求 1所述的钙钛矿薄膜的蒸发设备， 其特征在于， 所述蒸发 设备还包括控制系统， 所述控制系统分为自动控制模式和手动控制模 式两种模式， 所述自动控制模式会自动完成蒸发系统和沉积系统的加 热、 沉积腔体的抽真空、 沉积腔体的通氮气、 蒸汽阀门的幵关和沉积 腔体的沉积过程， 在所述手动控制模式下， 通过手动完成蒸发系统和 沉积系统的加热、 沉积腔体的抽真空、 沉积腔体的通氮气、 蒸汽阀门 的幵关和沉积腔体的沉积过程。
[权利要求 7] 如权利要求 1所述的钙钛矿薄膜的蒸发设备， 其特征在于， 所述网筛 的通孔的形状至少为圆形、 椭圆形及多边形中的一种。
[权利要求 8] —种如权利要求 4所述的钙钛矿薄膜的蒸发设备的使用方法， 其特征 在于， 包含如下步骤：
第一步骤， 将附着有 BX 2的待沉积基板批量放入沉积腔体中的沉积支 架上， 关闭沉积腔体的腔室门， 幵始利用真空装置对沉积腔体抽真空 ， 其中， B为铅 (Pb)、 锡 (Sn)、 钨、 铜、 锌、 镓、 锗、 砷、 硒、 铑、 钯、 银、 镉、 铟、 锑、 锇、 铱、 铂、 金、 汞、 铊、 铋、 钋中至少一种 阳离子， X为碘 （I) 、 溴 (Br)、 氯 (C1)中至少一种阴离子； 第二步骤， 待沉积腔体的腔室到达一定真空度后， 幵始充氮气； 气压 控制在 10 4 Pa ~ latm;
第三步骤， 将晶体粉末通过位于沉积腔体左侧的蒸发系统的进料装置 灌入到其蒸发副腔中， 晶体粉末为 AX晶体粉末， 其中， A为胺基、 脒基或者碱族中至少一种； 将溶剂灌入到位于沉积腔体右侧的另一蒸 发系统的蒸发副腔中， 其中， 溶剂包括酰胺类溶剂、 砜类 /亚砜类溶 齐 1J、 酯类溶剂、 烃类、 ¾代烃类溶剂、 醇类溶剂、 酮类溶剂、 醚类溶 剂和芳香烃溶剂中至少一种； 关闭进料阀门， 幵启蒸发加热装置分别 给晶体粉末和溶剂加热使得晶体粉末和溶剂蒸发， 并使得蒸发的蒸汽 温度控制在 0°C~200°C;
第四步骤， 通过沉积加热装置给沉积腔体加热， 加热的温度范围控制 在 30°C~200°C; 待沉积腔体的腔室到达一定温度和一定抽真空吋间后 ， 打幵沉积腔体顶部控制 AX蒸汽导通的阀门， 蒸发的 AX蒸汽透过网 筛的通孔分布于沉积腔体并均匀地到达待沉积薄膜的待沉积基板表面 ； 这吋， 蒸汽中的 AX蒸汽分子与沉积基板表面的 BX 2反应， ABX ^ 钛矿薄膜也就幵始慢慢形成；
第五步骤， 经过一段吋间， 待钙钛矿薄膜形成后， 关闭沉积腔体顶部 控制 AX蒸汽导通的阀门； 等待一定吋间后， 打幵沉积腔体顶部控制 溶剂蒸汽导通阀门， 对刚形成的钙钛矿薄膜进行处理； 处理完后， 关 闭沉积腔体顶部控制溶剂蒸汽导通阀门；
第六步骤， 沉积基板的沉积过程完成后， 关闭沉积加热装置和真空装 置； 幵启沉积腔体， 将沉积有 ABX 3钙钛矿薄膜的沉积基板从沉积支 架上取出保存。
[权利要求 9] 一种如权利要求 8所述的钙钛矿薄膜的蒸发设备的使用方法的应用， 其特征在于， 把该钙钛矿薄膜的蒸发设备用于制备钙钛矿薄膜的太阳 能电池或钙钛矿薄膜的 LED器件或钙钛矿薄膜的晶体管的生产过程中
PCT/CN2017/082792 2016-08-25 2017-05-03 一种钙钛矿薄膜的蒸发设备及其使用方法和应用 WO2018036191A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610721602.5A CN107779840A (zh) 2016-08-25 2016-08-25 一种钙钛矿薄膜的蒸发设备及其使用方法和应用
CN201610721602.5 2016-08-25

Publications (1)

Publication Number Publication Date
WO2018036191A1 true WO2018036191A1 (zh) 2018-03-01

Family

ID=61246381

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/082792 WO2018036191A1 (zh) 2016-08-25 2017-05-03 一种钙钛矿薄膜的蒸发设备及其使用方法和应用

Country Status (2)

Country Link
CN (1) CN107779840A (zh)
WO (1) WO2018036191A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109065736A (zh) * 2018-07-03 2018-12-21 中国科学院金属研究所 一种钙钛矿光吸收薄膜的制备装置
CN111244279A (zh) * 2018-11-29 2020-06-05 中国科学院大连化学物理研究所 一种柔性钙钛矿太阳能电池卷到卷真空沉积系统及制备方法
CN109449300A (zh) * 2018-12-28 2019-03-08 杭州纤纳光电科技有限公司 一种钙钛矿太阳能电池生产的在线监测设备及其监测方法
CN109713136A (zh) * 2018-12-29 2019-05-03 杭州纤纳光电科技有限公司 一种钙钛矿太阳能电池生产的实时监测设备及其监测方法
CN110331382A (zh) * 2019-07-04 2019-10-15 暨南大学 液态反应溶液微流注入式真空气相沉积装置及方法
CN113451516A (zh) * 2021-06-29 2021-09-28 无锡极电光能科技有限公司 制备钙钛矿吸收层的设备和方法及其应用
CN115572946B (zh) * 2022-09-16 2024-09-24 华为数字能源技术有限公司 一种钙钛矿的制备方法、制备设备及光电转换器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1317056A (zh) * 1998-07-21 2001-10-10 应用材料有限公司 Cvd装置
CN101072894A (zh) * 2004-11-23 2007-11-14 东京毅力科创株式会社 用于利用羰基金属前驱体沉积金属层的方法
CN104485425A (zh) * 2014-12-08 2015-04-01 清华大学 钙钛矿型材料制备方法和设备及其光伏器件的加工方法
CN105355794A (zh) * 2015-10-29 2016-02-24 深港产学研基地 一种使用化学气相沉积法制备钙钛矿薄膜太阳能电池的方法
CN205974658U (zh) * 2016-08-25 2017-02-22 杭州纤纳光电科技有限公司 一种钙钛矿薄膜的蒸发设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060182886A1 (en) * 2005-02-15 2006-08-17 Guidotti Emmanuel P Method and system for improved delivery of a precursor vapor to a processing zone
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
US20070234955A1 (en) * 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
CN105679936A (zh) * 2016-04-18 2016-06-15 河北大学 一种无铅钙钛矿薄膜、其制备方法及应用

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1317056A (zh) * 1998-07-21 2001-10-10 应用材料有限公司 Cvd装置
CN101072894A (zh) * 2004-11-23 2007-11-14 东京毅力科创株式会社 用于利用羰基金属前驱体沉积金属层的方法
CN104485425A (zh) * 2014-12-08 2015-04-01 清华大学 钙钛矿型材料制备方法和设备及其光伏器件的加工方法
CN105355794A (zh) * 2015-10-29 2016-02-24 深港产学研基地 一种使用化学气相沉积法制备钙钛矿薄膜太阳能电池的方法
CN205974658U (zh) * 2016-08-25 2017-02-22 杭州纤纳光电科技有限公司 一种钙钛矿薄膜的蒸发设备

Also Published As

Publication number Publication date
CN107779840A (zh) 2018-03-09

Similar Documents

Publication Publication Date Title
WO2018036191A1 (zh) 一种钙钛矿薄膜的蒸发设备及其使用方法和应用
JP6550534B2 (ja) ペロブスカイト薄膜用の低圧化学蒸着装置の使用方法と応用
JP2018531320A6 (ja) ペロブスカイト薄膜用の低圧化学蒸着装置及びその使用方法と応用
TWI555864B (zh) 提供硫屬元素之方法及裝置
CN106252460B (zh) 一种大面积钙钛矿太阳能电池的制作方法及系统
CN104389016B (zh) 一种快速制备大尺寸单晶石墨烯的方法
CN104485425A (zh) 钙钛矿型材料制备方法和设备及其光伏器件的加工方法
CN101578386A (zh) 将前体层转换成光伏吸收体的方法和装置
WO2019218567A1 (zh) 一种有机铵金属卤化物薄膜的制备装置及制备和表征方法
CN205974658U (zh) 一种钙钛矿薄膜的蒸发设备
JP4074574B2 (ja) 有機物気相蒸着装置
CN104053811B (zh) 用于材料共沉积的气相传输沉积方法及系统
WO2018036192A1 (zh) 钙钛矿层薄膜的成型方法、成型设备及其使用方法和应用
CN113644209B (zh) 一种钙钛矿膜层的制备方法、制备装置以及钙钛矿太阳能电池
KR102418868B1 (ko) 페로브스카이트 박막의 침지식 제조 기기 및 사용방법과 응용
TWI488313B (zh) 用於大規模處理覆蓋玻璃基板的基於ｃｉｓ和／或ｃｉｇｓ的薄膜的熱管理和方法
CN113471367A (zh) 制备钙钛矿膜层的系统和方法及其应用
CN107058976A (zh) 用于制备大面积钙钛矿薄膜的脉冲cvd设备
CN114481032A (zh) 制备钙钛矿膜层的设备和方法、太阳能电池及制备方法
TWI521729B (zh) 用於製造銅銦二硒化物半導體薄膜的方法
US20180127875A1 (en) Apparatus for performing selenization and sulfurization process on glass substrate
KR101284760B1 (ko) 태양전지 제조용 고속 열처리 시스템 및 이를 이용한 열처리 방법
CN104716222B (zh) 射频裂解硒蒸气制作铜铟镓硒薄膜的方法
WO2022116434A1 (zh) 钙钛矿薄膜节奏化沉积生产方法与设备
JPH11172418A (ja) 成膜装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17842616

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC

122 Ep: pct application non-entry in european phase

Ref document number: 17842616

Country of ref document: EP

Kind code of ref document: A1