WO2018028605A1 - 有机电致发光器件及其制备方法 - Google Patents

有机电致发光器件及其制备方法 Download PDF

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WO2018028605A1
WO2018028605A1 PCT/CN2017/096646 CN2017096646W WO2018028605A1 WO 2018028605 A1 WO2018028605 A1 WO 2018028605A1 CN 2017096646 W CN2017096646 W CN 2017096646W WO 2018028605 A1 WO2018028605 A1 WO 2018028605A1
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substrate
electrodes
organic electroluminescent
electroluminescent device
electrode
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PCT/CN2017/096646
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English (en)
French (fr)
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樊燕柳
李高敏
洪耀
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昆山维信诺科技有限公司
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Priority to US16/304,128 priority Critical patent/US11251382B2/en
Publication of WO2018028605A1 publication Critical patent/WO2018028605A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of flat panel display technology, and in particular to an organic electroluminescent device and a method of fabricating the same.
  • OLEDs Organic Light Emitting Displays
  • AMOLEDs active organic electroluminescent devices
  • PMOLEDs passive organic electroluminescent devices
  • the patterning of some layers is usually performed using a photolithography process, that is, using a photo mask.
  • the layers that need to be photolithographically processed are: PM (metal layer)->PT (ITO layer)->PI (insulation layer) -> PR (isolation column layer).
  • the layers that need to be photolithographically processed are PT (ITO layer)->PM (metal layer)->PI (insulation layer)->PR (isolation pillar layer), these lithography
  • a photomask is used to etch the pattern; when these layers are prepared, the evaporation process of the organic material and the cathode is performed, then the encapsulation process is performed, and finally the module process is performed.
  • a similar preparation method can be referred to the Chinese patent CN200810227260.7.
  • the PR isolation column
  • the height of the spacer affects the film packaging effect, affecting the reliability and flexibility of the flexible screen.
  • an organic electroluminescent device comprising: a substrate; a plurality of first electrodes disposed on the substrate, each of the first electrodes being used to form a light emitting unit; an insulating layer And disposed on the substrate to define a pixel area of the light emitting unit; a plurality of second electrodes disposed on the substrate, each of the second electrodes being used to form a light emitting unit, wherein each second The electrode spacing is arranged to form an isolation trench.
  • an isolation trench is formed between the second electrodes, which is canceled compared with the conventional technology.
  • the isolation column increases the flexibility of the light-emitting device, and the screen body made by the light-emitting device has better flexibility, and better meets the flexible bendable display requirements.
  • the substrate is a glass substrate.
  • the first electrode material is an indium tin oxide film.
  • the second electrode is made of metal.
  • the second electrode is made of aluminum or silver.
  • an organic electroluminescent device comprising the steps of:
  • the substrate surface is provided with a plurality of first electrodes and a plurality of conductive lines;
  • a second electrode material is vapor-deposited on the substrate on which the organic light-emitting material is vapor-deposited to form a plurality of second electrodes, and isolation trenches are formed between the second electrodes.
  • the providing substrate, the step of providing a plurality of first electrodes and a plurality of conductive lines on the surface of the substrate comprises:
  • the first electrode layer is etched to obtain a plurality of the first electrodes.
  • the providing substrate, the step of providing a plurality of first electrodes and a plurality of conductive lines on the surface of the substrate comprises:
  • the wiring layer is etched to obtain a plurality of the conductive lines.
  • the step of forming a pattern of an insulating layer on the substrate comprises:
  • An organic insulating material is continuously formed on the substrate, and the organic insulating material is exposed by a photomask capable of forming an insulating layer pattern, and then developed to form an insulating layer pattern.
  • the method further includes packaging the substrate having the plurality of first electrodes and the plurality of second electrodes.
  • FIG. 1 is a schematic structural view of an organic electroluminescent device according to an embodiment of the present invention.
  • FIG. 2 is a schematic view of a substrate provided with a first electrode layer and a wiring layer before etching begins, in accordance with an embodiment of the present invention.
  • a feature or an element is referred to as being “on” another feature or element, and may be directly on the other feature or element, or the intervening feature and/or element. In contrast, when a feature or element is referred to as “directly on” another feature or element, there are no intervening features and/or elements. It can also be understood that a feature or element is referred to as "connected” to another feature or element. It can be directly connected to another feature or element, or an intervening feature and/or element. In contrast, when a feature or element is “directly connected” to another feature or element, there are no intervening features and/or elements.
  • first and second are used herein to describe various features/elements, these features/features are not limited by these terms unless specifically stated otherwise. These terms can be used to distinguish one feature/element from another. Thus, the first feature/element described below may be referred to as the second feature/element, and similarly, the second feature/element described below may also be referred to as the first feature/element without departing from the scope of the invention.
  • an organic electroluminescent device As shown in FIG. 1, the organic electroluminescent device (OLED) includes a substrate 110, a plurality of first electrodes 122, a conductive line 132, an insulating layer 140, and a plurality of second electrodes 150.
  • a plurality of first electrodes 122 and conductive lines 132 are disposed on the substrate 110, and each of the first electrodes 122 is used to form a light emitting unit.
  • the insulating layer 140 is disposed on the substrate 110 to define a pixel area of the light emitting unit.
  • a plurality of second electrodes 150 are disposed on the substrate 110 and located above the first electrode 122 and the conductive lines 132. Each of the second electrodes 150 is configured to form a light emitting unit, wherein each of the second electrodes is spaced apart to form an isolation trench 160.
  • There is also an organic luminescent material under the second electrode 150 which is not shown in the drawings.
  • the substrate 110 is a glass substrate
  • the first electrode 122 is made of an indium tin oxide film
  • the second electrode 150 is made of a metal.
  • the second electrode 150 is made of aluminum or silver.
  • OLED organic electroluminescent device
  • Step 1 Providing a substrate on which a plurality of first electrodes and conductive lines are disposed. Each of the first electrodes is used to form a light emitting unit.
  • the above substrate having a plurality of first electrodes and conductive lines can be prepared in the following manner (first method).
  • a substrate 110 is first provided.
  • the first electrode layer 120 and the wiring layer 130 have been disposed on the substrate 110, but the first electrode layer 120 and the wiring layer 130 have not been subjected to photolithography, that is, the patterns of the first electrode and the conductive line have not been formed yet.
  • the substrate 110 having the first electrode layer 120 and the wiring layer 130 can be obtained by purchase. It can also be prepared by itself. When prepared by itself, it is not limited to a particular method.
  • the substrate 110 is preferably made of transparent glass.
  • the first electrode formed by the first electrode layer 120 may be an anode. It may also be a cathode, and a material of ITO (indium tin oxide) film is preferably used as the material.
  • the material of the circuit layer 130 is generally made of a metal such as MoAlMo (molybdenum aluminum molybdenum).
  • the circuit layer 130 is etched first to obtain the conductive line 132, and then the first electrode layer 120 is etched to obtain the first electrode 122, which is finally shown in FIG.
  • the above substrate having a plurality of first electrodes and conductive lines can also be prepared by the following method (second method):
  • the substrate 110 is provided, and only the first electrode layer 120 is provided on the substrate 110.
  • the first electrode layer 120 is then etched to obtain a first electrode 122.
  • a wiring layer 130 is then disposed on the substrate having the first electrode 122.
  • the wiring layer 130 is etched to obtain a conductive line 132.
  • Step 2 Form a pattern of an insulating layer on the substrate.
  • the pattern of insulating layer 140 is used to define the pixel area and can be obtained in any suitable manner.
  • an organic insulating material may be continuously formed on the substrate 110, and then the organic insulating material is exposed by a photomask capable of forming an insulating layer pattern, and then developed to form a pattern of the insulating layer.
  • the organic insulating material may be a photoresist.
  • the insulating layer pattern given in step 2 is only an example. Since the pixel design requirements of different OLED devices are different, and the insulating layer 140 is used to define the shape of the pixel region of the light emitting unit, the insulating layer The graphics will also be different.
  • the step of vapor-depositing the organic light-emitting material in the pixel region is performed, and the organic light-emitting material is omitted in FIG.
  • Step 3 depositing a second electrode material on the substrate on which the organic light-emitting material is evaporated by using a mask to form a plurality of second electrodes 150, and forming isolation trenches 160 between the second electrodes 150, as shown in FIG. Shown.
  • the second electrode 150 is used to form a light emitting unit.
  • the material of the second electrode 150 is a metal, such as a stable pure metal or alloy such as aluminum or silver.
  • the second electrode 150 can also be either a cathode or an anode.
  • the vapor deposition is normally performed.
  • the pattern of the second electrode 150 is formed by evaporation, a certain distance is reserved between the second electrodes 150 of the respective pixel units to form the isolation trenches 160.
  • the isolation trenches 160 are formed simultaneously while vapor deposition.
  • the isolation trench 160 functions to be used as an electrode isolation.
  • the isolation trench 160 serves to isolate the cathode.
  • the isolation trench 160 is formed by vapor deposition to form the second electrode 150. It is not a protrusion, so it does not affect the subsequent film encapsulation effect, and does not affect the bending of the organic electroluminescence device, thereby ensuring The flexibility of the screen body made by the organic electroluminescent device ensures a flexible display effect.
  • the advantages of this step are as follows: one is that there is no need to separately form a spacer column; the other is that the isolation trench 160 is formed between the second electrodes 150 without protruding pillars, and will not Affecting the subsequent film encapsulation effect; the third is to use the isolation trench 160 as a spacer, and when the subsequent screen body is bent, it is bent at the isolation trench 160, and the spacer is not easily formed as in the conventional scheme (ie, isolation) The column is broken.
  • Step 4 packaging the substrate 110 having the first electrode and the second electrode.
  • the encapsulation of the OLED device can be realized by using a technology such as a thin film package, which is not an improvement of the present invention and will not be described herein.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机电致发光器件，包括：基板(110)；多个第一电极(122)，设置在基板(110)上，每个第一电极(122)均用以形成发光单元；绝缘层(140)，设置在基板(110)上，用以限定发光单元的像素区域；多个第二电极(150)，设置在基板(110)上，每个第二电极(150)均用以形成发光单元，其中各第二电极(150)间隔设置形成隔离沟槽。上述有机电致发光器件，第二电极(150)之间预留间隔形成隔离沟槽，较传统技术，取消了隔离柱，从而增加了发光器件的柔韧性，进而利用发光器件制得的屏体柔性较好，更好满足柔性可弯折的显示要求。还提出一种上述机电致发光器件的制备方法。

Description

有机电致发光器件及其制备方法 技术领域
本发明涉及平板显示技术领域，特别是涉及一种有机电致发光器件及其制备方法。
背景技术
常规的有机电致发光器件(Organic Light Emitting Display，OLED)分为主动式有机电致发光器件(AMOLED)和被动式有机电致发光器件(PMOLED)，但无论是在AMOLED的制备还是PMOLED的制备过程中，某些层的图形化通常会使用光刻工艺，即使用photo mask(光掩膜)进行刻蚀。
目前，在PMOLED的制备过程中，一般需要四道光刻工序，对于常规工艺流程来说，需要进行光刻工艺的层别依次为：PM(金属层)->PT(ITO层)->PI(绝缘层)->PR(隔离柱层)。而对于后镀工艺流程来说，需要进行光刻工艺的层别依次为PT(ITO层)->PM(金属层)->PI(绝缘层)->PR(隔离柱层)，这些光刻工艺中均需使用光掩膜将图形刻蚀出来；当这些层制备完成后再进行有机材料和阴极的蒸镀工艺，然后进行封装工艺，最后进行模组流程。类似的制备方法可以参考中国专利CN200810227260.7。
但上述工艺流程制备出的有机电致发光器件弯折后，PR(隔离柱)容易倒塌、断裂、易造成行连。另外，隔离柱的高度影响薄膜封装效果，影响柔性屏的可靠性及可弯折性。
发明内容
基于此，有必要提供一种有机电致发光器件，具有较好的柔韧性。
根据本发明的一个方面，提供了一种有机电致发光器件，包括：基板；多个第一电极，设置在所述基板上，每个所述第一电极均用以形成发光单元；绝缘层，设置在所述基板上，用以限定所述发光单元的像素区域；多个第二电极，设置在所述基板上，每个所述第二电极均用以形成发光单元，其中各第二电极间隔设置形成隔离沟槽。
上述有机电致发光器件，第二电极之间形成隔离沟槽，较传统技术，取消 了隔离柱，从而增加了发光器件的柔韧性，进而利用发光器件制得的屏体柔性较好，更好满足柔性可弯折的显示要求。
在其中一个实施例中，所述基板为玻璃基板。
在其中一个实施例中，所述第一电极材质为氧化铟锡薄膜。
在其中一个实施例中，所述第二电极的材质为金属。
在其中一个实施例中，所述第二电极的材质为铝或银。
根据本发明的另一方面，还提供一种有机电致发光器件的制备方法，包括以下步骤：
提供基板，所述基板表面上设置有多个第一电极和多个导电线路；
在所述基板上形成绝缘层的图形；
在具有所述多个第一电极和所述绝缘层的图形的所述基板上蒸镀有机发光材料；
在蒸镀有所述有机发光材料的所述基板上蒸镀第二电极材料，形成多个第二电极，各第二电极之间形成隔离沟槽。
在其中一个实施例中，所述提供基板，所述基板表面上设置有多个第一电极和多个导电线路的步骤包括：
提供基板，所述基板上设有第一电极层、线路层；
蚀刻所述线路层，得到多个所述导电线路；
蚀刻所述第一电极层，得到多个所述第一电极。
在其中一个实施例中，所述提供基板，所述基板表面上设置有多个第一电极和多个导电线路的步骤包括：
提供基板，所述基板上设有第一电极层；
蚀刻所述第一电极层，得到多个所述第一电极；
在具有所述多个第一电极的基板上设置线路层；
蚀刻所述线路层，得到多个所述导电线路。
在其中一个实施例中，所述在所述基板上形成绝缘层的图形的步骤包括：
在所述基板上连续形成有机绝缘材料，采用能够形成绝缘层图形的光掩膜对所述有机绝缘材料进行曝光，然后显影，形成绝缘层图形。
在其中一个实施例中，进一步包括对具有所述多个第一电极、所述多个第二电极的所述基板进行封装的步骤。
附图说明
图1为根据本发明的一个实施例的有机电致发光器件的结构示意图；
图2为根据本发明的一个实施例的设置有第一电极层和线路层的基板开始蚀刻前的示意图。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似改进，因此本发明不受下面公开的具体实施例的限制。
可以理解的是，当本文中的特征或要素被称为在另一特征或要素“上”，它可以直接在另一特征或要素上，或者也可能出现介于中间的特征和/或要素。相反，当特征或要素被称为“直接在”另一特征或要素“上”，则不存在介于中间的特征和/或要素。也可以理解，当特征或要素被称为是“连接”至另一特征或要素上，它可以是直接连接至另一特征或要素，或者可能出现介于中间的特征和/或要素。相反，当特征或要素被成为“直接连接”至另一特征或要素，则不存在介于中间的特征和/或要素。
空间相关的术语，如“在……之下”、“在……下面”、“下面的”、“在……之上”、“上面的”等等，本文可以用来方便描述如附图所说明的一个要素或特征相对另一个要素或特征的关系。可以理解的是，空间相关的术语旨在除了图中描述的方向，还包含使用中或工作中的设备的不同的方向。例如，如果在图中的设备是倒转的，描述为在其他要素或特征“之下”的要素，然后可能会朝向其他要素或特征“之上”。因此，示例性的术语“之下”可以包含上方和下方两个方向。该设备可能有截然不同的朝向(旋转90度或以其他方向)，并且本文使用的空间相关的描述被相应地解释。类似地，除非另有特别指明，本文使用的“向上地”、“向下地”、“垂直的”、“水平的”等术语只是为了举例说明。
虽然术语“第一”和“第二”可能在本文中用于描述各种特征/要素，但是除非另有特别指明，这些特征/要素不被这些术语限制。这些术语可以用来将一个特征/要素与另一特征/要素区分开来。因此，以下描述的第一特征/要素可以称为第二特征/要素，类似地，以下描述的第二特征/要素也可以称为第一特征/要素，而不脱离本发明的范围。
下面结合附图，说明本发明的较佳实施方式。
根据本发明的一个实施例，提供了一种有机电致发光器件(OLED)。如图1所示，该有机电致发光器件(OLED)包括：基板110、多个第一电极122、导电线路132、绝缘层140和多个第二电极150。多个第一电极122和导电线路132设置在基板110上，每个第一电极122均用以形成发光单元。绝缘层140设置在基板110上，用以限定发光单元的像素区域。多个第二电极150设置在基板110上，并位于第一电极122和导电线路132上方，每个第二电极150均用以形成发光单元，其中各第二电极间隔设置形成隔离沟槽160。第二电极150下方还会有有机发光材料，图中省略未示意出。
在本实施例中，基板110为玻璃基板，第一电极122材质为氧化铟锡薄膜，第二电极150的材质为金属，优选地，第二电极150的材质为铝或银。
以下详细说明根据本发明的一个实施例的有机电致发光器件(OLED)的制备方法。该方法可以制得上述OLED，其包括以下步骤：
步骤1、提供基板，基板上设置有多个第一电极和导电线路。每个第一电极均用以形成发光单元。
上述具有多个第一电极和导电线路的基板的可以通过如下方式(第一方法)制备。
参照图2，首先提供基板110。该基板110上已经设置有第一电极层120和线路层130，但是第一电极层120和线路层130尚未进行光刻，即第一电极和导电线路的图形均尚未形成。
具有第一电极层120和线路层130的基板110可以通过购买的方式获得。也可以是自行制备。当自行制备时，并不局限于某种特定方法。
基板110优选使用透明玻璃。第一电极层120形成的第一电极可以是阳极， 也可以是阴极，其材质优先使用ITO(氧化铟锡)薄膜。线路层130的材质一般采用金属，例如MoAlMo(钼铝钼)。
先蚀刻线路层130以得到导电线路132，然后蚀刻第一电极层120，得到第一电极122，最终如图1所示。
另外，上述有多个第一电极和导电线路的基板还可以通过如下方式(第二方法)制备：
提供基板110，基板110上仅设有第一电极层120。然后蚀刻第一电极层120，得到第一电极122。
然后在具有第一电极122的基板上设置线路层130。蚀刻线路层130，得到导电线路132。
步骤2、在所述基板上形成绝缘层的图形。绝缘层140的图形用于限定像素区域，可以采用任何适合的方式获得。
例如，可以在基板110上连续形成有机绝缘材料，之后采用能够形成绝缘层图形的光掩膜对有机绝缘材料进行曝光，然后显影，形成绝缘层的图形。该有机绝缘材料可以是光刻胶。
需要说明的是，步骤2中给出的绝缘层图形仅是一种示例，由于不同的OLED器件像素区域设计要求不同，而绝缘层140是用来限定发光单元的像素区域形状的，所以绝缘层图形也会不同。
获得绝缘层图形后，则进行在像素区域蒸镀有机发光材料的步骤，图1中省略示意出有机发光材料。
步骤3、利用掩膜板在所述蒸镀好有机发光材料的基板上蒸镀第二电极材料，形成多个第二电极150，各第二电极150之间形成隔离沟槽160，如图1所示。所述第二电极150用以形成发光单元。其中，第二电极150的材质为金属，例如铝或银等稳定的纯金属或合金。第二电极150同样既可以是阴极，也可以是阳极。
具体地，当步骤2进行完之后，正常进行蒸镀。但是在蒸镀形成第二电极150的图形时，各像素单元的第二电极150之间预留一定距离以形成隔离沟槽160。换言之，步骤3中，是在蒸镀的同时即同步形成隔离沟槽160。
隔离沟槽160的作用是用来作为电极隔离。如当第二电极150作为阴极时，隔离沟槽160用以隔离阴极。隔离沟槽160是蒸镀形成第二电极150时一并形成的，其不是一个突出物，因此不会影响后续的薄膜封装效果，也不会影响有机电致发光器件的弯折，从而能够保证利用有机电致发光器件制得的屏体的柔韧性，保证柔性显示效果。
与现有技术相比，本步骤的优点在于：一是不需要单独的形成隔离柱的步骤；二是隔离沟槽160是形成于各第二电极150之间，没有突出的柱状物，不会影响后续的薄膜封装效果；三是利用隔离沟槽160作为隔离物，当后续屏体弯折时，是在隔离沟槽160处弯折，不会如传统方案一样，轻易出现隔离物(即隔离柱)被折断的情况。
步骤4、对所述具有第一电极、第二电极的基板110进行封装。可以利用薄膜封装等技术实现OLED器件的封装，非本发明改进重点，此处不再赘述。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种有机电致发光器件，其特征在于，包括：
    基板；
    多个第一电极，设置在所述基板上，每个所述第一电极均用以形成发光单元；
    绝缘层，设置在所述基板上，用以限定所述发光单元的像素区域；
    多个第二电极，设置在所述基板上，每个所述第二电极均用以形成发光单元，其中各第二电极间隔设置形成隔离沟槽。
  2. 根据权利要求1所述的有机电致发光器件，其特征在于，所述基板为玻璃基板。
  3. 根据权利要求1所述的有机电致发光器件，其特征在于，所述第一电极材质为氧化铟锡薄膜。
  4. 根据权利要求1所述的有机电致发光器件，其特征在于，所述第二电极的材质为金属。
  5. 根据权利要求4所述的有机电致发光器件，其特征在于，所述第二电极的材质为铝或银。
  6. 一种有机电致发光器件的制备方法，其特征在于，包括以下步骤：
    提供基板，所述基板表面上设置有多个第一电极和多个导电线路；
    在所述基板上形成绝缘层的图形；
    在具有所述多个第一电极和所述绝缘层的图形的所述基板上蒸镀有机发光材料；
    在所述蒸镀有所述有机发光材料的所述基板上蒸镀第二电极材料，形成多个第二电极，各第二电极之间形成隔离沟槽。
  7. 根据权利要求6所述的有机电致发光器件的制备方法，其特征在于，所述提供基板，所述基板表面上设置有多个第一电极和多个导电线路的步骤包括：
    提供基板，所述基板上设有第一电极层、线路层；
    蚀刻所述线路层，得到所述多个导电线路；
    蚀刻所述第一电极层，得到所述多个第一电极。
  8. 根据权利要求6所述的有机电致发光器件的制备方法，其特征在于，所述提供基板，所述基板表面上设置有多个第一电极和多个导电线路的步骤包括：
    提供基板，所述基板上设有第一电极层；
    蚀刻所述第一电极层，得到所述多个第一电极；
    在具有所述多个第一电极的基板上设置线路层；
    蚀刻所述线路层，得到所述多个导电线路。
  9. 根据权利要求6所述的有机电致发光器件的制备方法，其特征在于，所述在所述基板上形成绝缘层的图形的步骤包括：
    在所述基板上连续形成有机绝缘材料，采用能够形成绝缘层图形的光掩膜对所述有机绝缘材料进行曝光，然后显影，形成绝缘层图形。
  10. 根据权利要求6所述的有机电致发光器件的制备方法，其特征在于，进一步包括对具有所述多个第一电极、所述多个第二电极的所述基板进行封装的步骤。
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