WO2018014494A1 - 氮化硼纳米材料、其制备方法与应用 - Google Patents

氮化硼纳米材料、其制备方法与应用 Download PDF

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WO2018014494A1
WO2018014494A1 PCT/CN2016/110420 CN2016110420W WO2018014494A1 WO 2018014494 A1 WO2018014494 A1 WO 2018014494A1 CN 2016110420 W CN2016110420 W CN 2016110420W WO 2018014494 A1 WO2018014494 A1 WO 2018014494A1
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boron nitride
atmosphere
nitrogen
precursor
borate
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PCT/CN2016/110420
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English (en)
French (fr)
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姚亚刚
李涛涛
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中国科学院苏州纳米技术与纳米仿生研究所
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Priority claimed from CN201610584210.9A external-priority patent/CN107641789B/zh
Priority claimed from CN201610584293.1A external-priority patent/CN107640750B/zh
Priority claimed from CN201610583620.1A external-priority patent/CN107640751B/zh
Application filed by 中国科学院苏州纳米技术与纳米仿生研究所 filed Critical 中国科学院苏州纳米技术与纳米仿生研究所
Priority to AU2016415516A priority Critical patent/AU2016415516A1/en
Priority to JP2018567595A priority patent/JP6657429B2/ja
Priority to US16/306,758 priority patent/US20190127222A1/en
Publication of WO2018014494A1 publication Critical patent/WO2018014494A1/zh

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    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
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    • C01B21/00—Nitrogen; Compounds thereof
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    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
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    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Definitions

  • the invention relates to a method for preparing a boron nitride material, in particular to a boron nitride nano material, a preparation method thereof and application thereof, and belongs to the technical field of inorganic nano materials.
  • Boron nitride nanomaterials have many excellent physicochemical properties, including excellent mechanical strength, high thermal conductivity, wide direct band gap, good chemical inertness (corrosion resistance, high temperature oxidation resistance), and large specific surface area. It has broad application prospects in many fields such as electronic devices, deep ultraviolet ray, composite materials, heat dissipating materials, friction materials, drug loading, and catalyst loading.
  • boron nitride nanosheets have a six-membered ring planar structure similar to graphene, and the lattice constant is most compatible with graphene. It is called “white graphene” and has excellent electrical insulation and high electrical properties. Thermal conductivity, wide direct band gap, and good chemical inertness (corrosion resistance, high temperature oxidation resistance), good biocompatibility, and large specific surface area.
  • the synthesis methods of BNNS include “top-down method” and “bottom-up method”. The “top-down method” is to obtain a BN nanosheet by peeling off micron-sized BN particles layer by layer.
  • the “top-down method” includes liquid phase stripping method, mechanical stripping method, liquid-mechanical combined stripping, molten alkali stripping, molten salt stripping, etc. These methods are low in cost, but have a long production cycle, complicated process, and low efficiency. Production cannot meet industrial demand. Others such as the "chemical bubbling" method, the replacement method, and the like are often disadvantageous in that high cost is disadvantageous to mass production, low yield, and poor product quality.
  • the “bottom-up method” includes chemical vapor deposition (CVD) and the like.
  • the CVD method reacts a gas containing boron and nitrogen (such as BF 3 and NH 3 ) at a high temperature, or decomposes a gas molecule containing both boron and nitrogen (such as B 3 N 3 H 6 ) at a high temperature,
  • the surface of the catalytically active substrate for example, a metal substrate such as copper, nickel or ruthenium
  • a metal substrate such as copper, nickel or ruthenium
  • the boron nitride nanosheet synthesized by the method has good crystal quality and large sheet size, has an atomic level flat surface, and is an ideal substrate material for high quality graphene, transition metal disulfide and the like. There are broad application prospects in electronic devices.
  • the BNNS prepared by the existing CVD method must be transferred to a silicon substrate to form a device, and the production thereof is low, the synthesis process is complicated, and the application in the fields of composite materials, heat dissipating materials, friction materials, drug loading, and catalyst loading is not yet applied. competitive.
  • some researchers have synthesized boron nitride nanosheets on silicon substrates, but this method still needs to deposit a layer of metal as a catalyst on the silicon substrate. After the growth, there is metal between the silicon substrate and the boron nitride nanosheets. Used directly with the silicon in the device.
  • boron nitride nanotubes due to its special tubular structure and large aspect ratio and piezoelectric effect. Etc., it can be used as a reinforcement of composite materials, a catalyst carrier, a new type of pressure sensor, etc., and can also be used as a transport channel for small molecules to study its transport mechanism.
  • the synthetic methods of boron nitride nanotubes reported so far include arc discharge method, laser ablation method, ball annealing method, chemical vapor deposition method, template method and the like.
  • the above method still has a problem in controlling the diameter and wall number of BNNT, and the most important thing is that it is difficult to realize batch preparation of BNNT.
  • boron nitride nanoribbons can be viewed as strip-shaped boron nitride nanosheets having a width in the nanometer size. Due to its special sideband structure, including rich unsaturated bonds and modifiability, it exhibits specific physical properties, such as narrow band gaps controlled by width and special magnetic properties, in nanoelectronic devices, spintronics Devices, optoelectronic devices, sensors, composite materials, etc. have attractive application prospects. Moreover, in the application of composite materials, its special edge structure also makes BNNR have better interface bonding with the matrix, showing more significant enhancement than BNNT and BNNS.
  • the preparation method of the boron nitride nanobelt is mainly to use a plasma or an alkali metal vapor to axially cut the boron nitride nanotube to obtain a nanobelt.
  • these methods are more demanding on the equipment, or are more demanding and dangerous, and the yield is low.
  • Other methods such as in-situ reaction to generate BNNR have low yields.
  • the main object of the present invention is to provide a boron nitride nano material, a preparation method and application thereof, to overcome the deficiencies in the prior art.
  • the technical solution adopted by the present invention includes:
  • An embodiment of the present invention provides a method for preparing a boron nitride nano material, comprising: heating a precursor to a temperature of 1000 to 1500 ° C in a nitrogen-containing reaction atmosphere, and maintaining the reaction to obtain the boron nitride nano material;
  • the precursor comprises boron element and at least one metal element and/or at least one non-metal element other than boron element, the metal element being selected from the group consisting of lithium, strontium, magnesium, calcium, strontium, barium, aluminum, gallium, At least one of indium, zinc, and titanium, and the non-metallic element includes silicon.
  • the preparation method comprises: using a solid boron source as the precursor, heating the reaction to a temperature of 1000 to 1500 ° C in a nitrogen-containing reaction atmosphere, and maintaining the reaction, followed by a protective atmosphere. Cooling to room temperature, obtaining a crude product, and then post-treating the crude product to obtain a boron nitride nanosheet powder; the solid boron source is selected from the group consisting of borate, and the boron source is selected from the group consisting of lithium, barium, and magnesium. a borate of at least one of calcium, barium, strontium, aluminum, gallium, indium, zinc, and titanium.
  • the method of preparation comprises: using the precursor as a precursor overlying a substrate a film, a continuous film of boron nitride nanosheets is prepared by heating the precursor film to a temperature of 1000 to 1400 ° C in a nitrogen-containing reaction atmosphere; the precursor film comprises at least three elements, two of which The elements are respectively boron and oxygen, and the remaining elements are selected from any one or a combination of two or more of lithium, barium, magnesium, calcium, strontium, barium, aluminum, gallium, indium, zinc, titanium, and silicon.
  • the method of preparation comprises: using a one-dimensional borate precursor as the precursor, by heating the one-dimensional borate precursor to a temperature of 1000-1500 ° C in a nitrogen-containing atmosphere and The first reaction of the first-order borate precursor is selected from the group consisting of lithium and lanthanum, after the temperature is lowered to a room temperature to obtain a crude product in a protective atmosphere, and the crude product is post-treated to obtain a one-dimensional boron nitride nano material.
  • the embodiments of the present invention further provide a plurality of boron nitride nanomaterials prepared by the foregoing method, including a boron nitride nanosheet powder, a boron nitride nanosheet continuous film, a one-dimensional boron nitride nano material, and the like.
  • Embodiments of the invention also provide for the use of a plurality of boron nitride nanomaterials prepared by the foregoing methods.
  • the preparation method of the boron nitride nano material provided by the invention is simple and controllable, the cost is low, the raw materials are mostly cheap and easy to obtain, and the conversion rate is high, which is advantageous for mass production, and various boron nitride nano materials obtained at the same time. It also has the advantages of excellent quality, controllable appearance, etc. It has a good application prospect in many fields such as electronic devices, deep ultraviolet ray, composite materials, heat dissipating materials, friction materials, drug loading, and catalyst loading.
  • Fig. 1 is a photograph of a solid of the BN nanosheet powder obtained in Example 1.
  • Example 2 is a TEM topographical picture of the BNNS powder obtained in Example 1.
  • Example 3 is an SEM image of the BN nanosheets obtained in Example 2.
  • Figure 5 is a TEM image of the product obtained in Example 2.
  • Fig. 6 is a Raman spectrum of the BNNS obtained in the third embodiment.
  • Fig. 7 is a TEM image of the BNNS obtained in the fourth embodiment.
  • Figure 8 is a SEM image of the BNNT obtained in Example 20.
  • Figure 9 is a TEM image of the BNNT obtained in Example 20.
  • Figure 10 is an XRD chart of the BNNT obtained in Example 20.
  • Figure 11 is a Raman diagram of the BNNT obtained in Example 20.
  • Figure 12 is an SEM image of the BNNT obtained in Example 21.
  • Figure 13 is a Raman spectrum of the BNNT obtained in Example 21.
  • the method for preparing a boron nitride nano material may include: heating the precursor to 1000-1500 ° C in a nitrogen-containing reaction atmosphere and maintaining the reaction to obtain the boron nitride nano material;
  • the precursor comprises boron element and at least one metal element and/or at least one non-metal element other than boron element selected from the group consisting of lithium, strontium, magnesium, calcium, strontium, barium, aluminum, gallium, and indium.
  • At least one of zinc, titanium, and the non-metallic element comprises silicon.
  • the inventors of the present invention have found through long-term research and extensive practice that when a borate containing at least one of lithium, barium, magnesium, calcium, strontium, barium, aluminum, gallium, indium, zinc, and titanium is used at a high temperature
  • a nitrogen source such as ammonia or nitrogen under conditions
  • high-quality two-dimensional boron nitride nanosheets can be obtained in high yield.
  • the preparation method may include: using a solid boron source as the precursor, heating the reaction to a temperature of 1000 to 1500 ° C by heating the solid boron source in a nitrogen-containing reaction atmosphere And then cooling to room temperature in a protective atmosphere to obtain a crude product, and then post-treating the crude product to obtain a boron nitride nanosheet powder; the solid boron source is selected from a borate, and the boron source is selected A borate containing at least one element selected from the group consisting of lithium, barium, magnesium, calcium, strontium, barium, aluminum, gallium, indium, zinc, and titanium.
  • the solid boron source in the foregoing embodiment may preferably be derived from calcium borate (CaB 4 O 7 , Ca 2 B 2 O 5 , Ca 3 B 2 O 6 ), magnesium borate (MgB 4 O 7 , MgB 2 O 5 , Mg) 3 B 2 O 6 ), lithium borate (Li 2 B 4 O 7 ) and borate of metals such as aluminum, zinc, or mixtures thereof, and almost all crystal forms of these boron salts are in the aforementioned embodiments of the invention It is applicable in the program.
  • the preparation method may further comprise: heating the boron source to a temperature higher than 1250 ° C and less than or equal to 1500 ° C in a reaction atmosphere and incubating the reaction.
  • the preparation method may further comprise: heating the boron source in the reaction atmosphere to above 1250 ° C and less than or equal to 1500 ° C and maintaining the reaction for 0.5 h or more, for example 0.5 h to 5 h.
  • the nitrogen-containing reaction atmosphere in the foregoing embodiment may preferably be a mixed atmosphere of an ammonia gas atmosphere, a nitrogen atmosphere, or at least one of ammonia gas and nitrogen gas and argon gas, but is not limited thereto.
  • the protective atmosphere in the foregoing embodiment may preferably be a nitrogen atmosphere, an argon atmosphere or a nitrogen-argon mixed atmosphere, but is not limited thereto.
  • the post-treatment may include: washing the crude product with an acid solution, filtering, and drying at 60 to 80 ° C for 1 h to 12 h to obtain the boron nitride nanosheet.
  • the crude product in the foregoing embodiment is a composite or mixture of boron nitride nanosheets and corresponding metal oxides, wherein the oxide is a by-product which can be washed away with acid.
  • the concentration of the acid solution may be any suitable concentration, for example, preferably greater than 0.1 mol/L, wherein the acid contained therein reacts with by-products in the crude product to form a soluble material.
  • the post-treatment may further include: in combination with a mechanical method, the crude product is sufficiently washed with an acid solution; the mechanical method includes stirring or ball milling. The washing process is combined with a mechanical method to allow thorough washing.
  • the preparation method may further include: collecting, in the post-treatment, a soluble by-product formed by reacting a by-product of the crude product with a washing acid solution, and used for synthesizing the boron source.
  • the by-product MgO is acid-washed to form a corresponding salt solution (solutions such as MgCl 2 , Mg(NO 3 ) 2 , MgSO 4 , etc.), and after extraction and crystallization, it can be used as a raw material to synthesize magnesium borate again, which is a green environmental protection. Synthetic method.
  • the boron nitride nanosheet powder prepared by the foregoing embodiment is a hexagonal boron nitride nanosheet having a purity of 99% or more, and the hexagonal boron nitride nanosheet has a thickness of 1 to 20 atomic layers and a radial dimension of 1 ⁇ 20 ⁇ m.
  • a method for preparing a boron nitride nano material is a low-cost batch preparation method of boron nitride nanosheet powder, which may include the following steps:
  • the boron source is heated to 1000-1500 ° C (preferably higher than 1250 ° C and less than or equal to 1500 ° C) in an atmosphere containing ammonia gas, kept for 0.5 to 5 h, and cooled to room temperature under the protection of nitrogen or argon. , a white crude product was obtained.
  • the yield of a single batch can be above the gram level according to the amount of the precursor and the volume of the device.
  • the net yield (calculated as boron equivalent) is as high as 85%.
  • the foregoing embodiment relates to the following chemical reaction (taking the reaction of three components of magnesium borate in ammonia gas as an example):
  • the foregoing step (1) may include: heating the boron source to 1000-1500 ° C in an atmosphere containing ammonia gas and maintaining the temperature for 0.5 to 4 h, and reducing the temperature to room temperature under the protection of nitrogen or argon to obtain a white crude product.
  • one of the reactions of the equation is: Li 2 B 4 O 7 +4NH 3 ⁇ 4BN+Li 2 O+6H 2 O.
  • the purification described in the aforementioned step (2) may include washing with water for 3 to 5 times. After washing, filtering, etc., the reaction by-products can be efficiently removed to obtain high-purity BN nanosheets.
  • the drying described in the foregoing step (2) may include drying at 60 to 80 ° C for 6 to 12 hours.
  • a type of hexagonal boron nitride two-dimensional ultra-thin nanosheet has a thickness of 1 to 20 atomic layers and a size of 1 to 20 ⁇ m. Powdered form.
  • the hexagonal boron nitride two-dimensional ultra-thin nanosheet prepared by the foregoing embodiment can be applied to various fields such as deep ultraviolet luminescence, composite materials, heat dissipating materials, friction materials, drug loading, catalyst carriers and the like.
  • the preparation method may include: the precursor is a precursor film coated on a substrate, and the precursor film is heated to 1000-1400 in a nitrogen-containing reaction atmosphere. And incubating the reaction to obtain a continuous film of boron nitride nanosheets; the precursor film comprises at least three elements, two of which are boron and oxygen, and the remaining elements are selected from the group consisting of lithium, barium, magnesium, calcium, Any one or a combination of two or more of ruthenium, osmium, aluminum, gallium, indium, zinc, titanium, and silicon.
  • the precursor film in the foregoing embodiment may be formed directly on the surface of the substrate.
  • the precursor film in the foregoing embodiment comprises a precursor of (Al 2 O 3 ) m ⁇ (B 2 O 3 ) n , wherein m/n is 1:1 to 1000:1.
  • the precursor film in the foregoing embodiment comprises a precursor of (SiO 2 ) m ⁇ (B 2 O 3 ) n , wherein m/n is 1:1 to 1000:1.
  • the preparation method may specifically include:
  • a high temperature reaction is carried out in an atmosphere containing ammonia gas and/or nitrogen gas to obtain a continuous film of the boron nitride nanosheet.
  • the preparation may include: depositing a B x Si 1-x O precursor film on the substrate by magnetron sputtering, having a thickness of 1 to 500 nm; and then containing ammonia The high temperature reaction was carried out under a gas atmosphere to obtain a continuous film of the boron nitride nanosheet.
  • the preparation method may further include: coating the precursor film on the substrate, and then heating to 1000-1400 ° C in a nitrogen-containing reaction atmosphere and maintaining the reaction for 10 min or more, for example, 10 min. ⁇ 300 min to form the continuous film of boron nitride nanosheets on the surface of the substrate.
  • the preparation method may further include: coating the precursor film on a substrate (for example, a silicon substrate), and then heating to 1000-1400 ° C in a nitrogen-containing reaction atmosphere and maintaining the reaction. Forming the continuous thin film of boron nitride nanosheet on the surface of the substrate, and forming an insulating dielectric layer such as a metal oxide layer or a silicon oxide layer on the continuous thin film of the substrate and the boron nitride nanosheet, so that not only does not hinder It is even beneficial for the design and fabrication of subsequent devices.
  • a substrate for example, a silicon substrate
  • an insulating dielectric layer such as a metal oxide layer or a silicon oxide layer
  • the preparation method may further include: using at least one of magnetron sputtering, electron beam evaporation, thermal evaporation, pulsed laser deposition, molecular beam epitaxy, and atomic layer deposition.
  • the surface of the substrate is deposited to form the precursor film.
  • the precursor film in the foregoing embodiment has a thickness of from 1 to 500 nm.
  • the nitrogen-containing reaction atmosphere in the foregoing embodiment is selected from a mixed atmosphere of ammonia gas and/or nitrogen gas or ammonia gas and/or nitrogen gas and a diluent gas, and the diluent gas includes an inert gas (for example, argon gas), but not Limited to this.
  • the diluent gas includes an inert gas (for example, argon gas), but not Limited to this.
  • the substrate in the foregoing embodiment includes a silicon (Si) substrate or a silicon oxide (Si/SiO 2 ) substrate, and is not limited thereto.
  • the continuous film of boron nitride nanosheets in the foregoing embodiment is directly grown on the surface of the substrate.
  • the continuous film of boron nitride nanosheet prepared by the foregoing embodiment is formed by a single crystal of a hexagonal boron nitride nanosheet having a size of 1 to 50 ⁇ m (similar to a polycrystalline splicing form having a grain boundary), and the film thickness is between 1 and 100 atomic layers.
  • Embodiments of the present invention also provide for the use of a continuous film of boron nitride nanosheets prepared by the foregoing embodiments, such as in the fabrication of two-dimensional nanomaterials or devices comprising two-dimensional nanomaterials.
  • the aforementioned two-dimensional nano material includes graphene or the like, and is not limited thereto.
  • the foregoing boron nitride nanosheet continuous film can be synthesized directly on a silicon substrate without any transfer process. And the foregoing boron nitride nanosheet continuous film can directly serve as a substrate for graphene growth, constitute a substrate and/or a gate of the graphene device, and the process is simple and controllable, and has a great application prospect in the graphene device, and can realize batch produce.
  • the inventors of the present invention have found through long-term research and extensive practice that when one-dimensional boric acid containing at least one of lithium, barium, magnesium, calcium, strontium, barium, aluminum, gallium, indium, zinc, and titanium is used.
  • the salt precursor reacts with a nitrogen source such as ammonia or nitrogen under high temperature conditions, high-quality one-dimensional boron nitride nanomaterials can be obtained in high yield.
  • the preparation method may include: using a one-dimensional borate precursor as the precursor, by using the one-dimensional borate precursor in a nitrogen-containing atmosphere Heating to 1000-1500 ° C and holding the reaction, then cooling to room temperature in a protective atmosphere to obtain a crude product, and then post-processing the crude product to obtain a one-dimensional boron nitride nano material; the one-dimensional borate The precursor is selected from the group consisting of one-dimensional borate materials containing at least one of lithium, barium, magnesium, calcium, strontium, barium, aluminum, gallium, indium, zinc, and titanium.
  • the one-dimensional borate material in the foregoing embodiment may be selected from the group consisting of borate whiskers, borate nanorods, borate nanowires, borate nanobelts, and the like, and is not limited thereto.
  • the preparation method comprises: heating the one-dimensional borate precursor to a temperature higher than 1200 ° C and less than or equal to 1500 ° C in a nitrogen-containing atmosphere and maintaining the reaction.
  • the preparation method comprises: heating the one-dimensional borate precursor in a nitrogen-containing atmosphere to a temperature higher than 1200 ° C and less than or equal to 1300 ° C and holding the reaction for a certain period of time, for example, 0.5 h or more, Preferably, it is from 0.5 h to 5 h.
  • the nitrogen-containing reaction atmosphere in the foregoing embodiment includes an ammonia gas atmosphere, a nitrogen atmosphere, or a mixed atmosphere of at least one of ammonia gas and nitrogen gas and argon gas, but is not limited thereto.
  • the protective atmosphere in the foregoing embodiment includes a nitrogen atmosphere, an argon atmosphere, or a nitrogen-argon atmosphere, but is not limited thereto.
  • the post-treatment comprises washing the crude product with an acid solution, filtering, and drying to obtain the one-dimensional boron nitride nanomaterial.
  • the post-treatment comprises: washing the crude product with an acid solution, filtering, and drying at 60-80 ° C for 1 to 12 h to obtain the one-dimensional boron nitride nano material.
  • the concentration of the acid solution is preferably 0.1 to 6 mol/L, and the acid contained therein can react with by-products in the crude product to form a soluble substance.
  • the preparation method may further include: collecting, in the post-treatment, a soluble by-product formed by reacting a by-product of the crude product with a washing acid solution, and synthesizing the one-dimensional boric acid. Salt precursors.
  • the preparation method may further include the following steps:
  • the crude product obtained in the step (1) is purified, filtered, and dried to obtain a one-dimensional boron nitride nano material having a purity of 99% or more.
  • the yield of a single batch can be above the gram level according to the amount of the precursor and the volume of the device, and under the superior synthesis conditions, the yield (calculated as boron equivalent) is as high as 85%.
  • the one-dimensional boron nitride nanomaterial prepared by the method in the foregoing embodiment includes boron nitride nanotubes, boron nitride nanobelts, and the like, and the structure, morphology, and the like of the one-dimensional boron nitride nanomaterial depend on the precursor. The shape and structure.
  • the boron nitride nanotubes have a wall thickness ranging from a monoatomic layer to a polyatomic layer, the length and diameter of which depend on the length and diameter of the precursor whiskers or nanowires used.
  • the boron nitride nanobelt has a thickness ranging from a monoatomic layer to a polyatomic layer, and the width and length are dependent on the width and length of the borate nanoribbon used.
  • the one-dimensional boron nitride nano material prepared by the method in the foregoing embodiment can be applied to deep ultraviolet luminescence, Composite materials, heat-dissipating materials, friction materials, drug loading, catalyst carriers and many other fields.
  • Example 1 CaB 4 O 7 2g was placed in an open alumina crucible, then placed in a tube furnace, evacuated to 10 -3 Pa, and passed through 200 standard milliliters per minute (sccm) of NH 3 . To 1250 ° C. After reacting at a constant temperature of 1,250 ° C for 180 min, NH 3 was turned off, and 200 sccm of N 2 was introduced , and the mixture was cooled to room temperature in a N 2 atmosphere and taken out to give a crude product. Then, the obtained product was washed with ultrasonic water for 5 hours, filtered, and dried to obtain a boron nitride nanosheet powder having a purity of 99% or more.
  • sccm standard milliliters per minute
  • FIG. 1 is a photograph of the crude product of the obtained BN nanosheet prepared in the present example.
  • Fig. 2 is a TEM top view of the BNNS powder obtained in the present embodiment, and it can be seen that the size is on the order of micrometers.
  • Example 2 2 g of Mg 2 B 2 O 5 was placed in an open alumina crucible and placed in a tube furnace. An air of 1000 standard milliliters per minute (sccm) was introduced to remove air from the furnace tube. The temperature was then raised to 1300 ° C in 200 sccm Ar and 200 sccm NH 3 . After 4 hours of constant temperature reaction at 1300 ° C, NH 3 was turned off, and 500 sccm of Ar was cooled to room temperature, and hydrazine was taken out to obtain a crude product.
  • sccm standard milliliters per minute
  • Fig. 3 is an SEM image of the BN nanosheet obtained in the present example, and a scaly BN nanosheet can be observed.
  • Figure 4 is an XRD pattern of the BNNS obtained in the present example, confirming that the obtained product is a hexagonal BN of a single phase.
  • Figure 5 is a TEM image of the product obtained in this example, confirming that the product is a nanosheet with a sheet size on the micrometer scale.
  • Example 3 Al 4 B 2 O 9 was placed in an open alumina crucible, then placed in a tube furnace and evacuated to 10 -3 Pa. The temperature was then raised to 1500 ° C in 300 sccm NH 3 . After reacting at 1500 ° C for 120 min, the NH 3 was turned off, and 200 sccm of Ar was cooled to room temperature, and the hydrazine was taken out to obtain a crude product. Then, the obtained product is subjected to ultrasonic acid washing with 3 mol/L of nitric acid for 5 hours, and then filtered and dried to obtain a boron nitride nanosheet powder having a purity of 99% or more. This example can achieve a target product yield of 95%.
  • Fig. 6 is a Raman spectrum of the BNNS obtained in the present embodiment, and the peak of 1367.9 cm -1 can be determined as a hexagonal structure BN.
  • Example 4 A plurality of ZnB 4 O 7 were placed in an open boron nitride crucible, then placed in a tube furnace and evacuated to 10 -3 Pa. The temperature was then raised to 1300 ° C in 300 sccm NH 3 . After reacting at 1300 ° C for 2 h, the NH 3 was turned off, and 200 sccm of Ar was introduced to cool to room temperature, and the hydrazine was taken out to obtain a crude product. Then, the obtained product is washed with ultrasonic water for 2 hours, filtered, and dried to obtain a boron nitride nanosheet powder having a purity of 99% or more. This example can obtain a target product yield of 80%.
  • Fig. 7 is a TEM image of the BNNS obtained in the present embodiment, and it can be seen that the thickness of the nanosheet is about 15 atomic layers.
  • Example 5 Several LiOH and B 2 O 3 were taken, mixed in a ratio of 1:1, placed in an open boron nitride crucible, placed in a tube furnace, and evacuated to 10 -3 Pa. Then, the temperature was raised to 800 ° C for 1 h in 300 sccm Ar to cause the reaction to form lithium borate Li 2 B 4 O 7 . Then, the temperature was raised to 1300 ° C, Ar was turned off to open NH 3 , and after constant temperature reaction at 1300 ° C for 3 hours, NH 3 was turned off, and 200 sccm of Ar was cooled to room temperature, and the hydrazine was taken out to obtain a crude product. Then, the obtained product was washed with water for 5 hours by mechanical stirring, and then filtered and dried to obtain a boron nitride nanosheet powder having a purity of 99% or more. This example can obtain a target product yield of 80%.
  • Example 6 Several MgO and B 2 O 3 were taken, mixed in a ratio of 2:1, placed in an open boron nitride crucible, placed in a tube furnace, and evacuated to 10 -3 Pa. Then, the temperature was raised to 1000 ° C for 3 h in 300 sccm Ar to cause the reaction to form magnesium borate. Then, the temperature was raised to 1400 ° C, Ar was turned off to open NH 3 , and after constant temperature reaction at 1400 ° C for 3 h, NH 3 was turned off, and 200 sccm of Ar was cooled to room temperature, and the hydrazine was taken out to obtain a crude product. Then, the obtained product is washed with water for 5 hours by mechanical stirring, and then filtered and dried to obtain a boron nitride nanosheet powder having a purity of 99% or more. This example can obtain a target product yield of 85%.
  • Example 7 Amount of Al(OH) 3 and H 3 BO 3 , mixed in a ratio of 9:2, placed in an open boron nitride crucible, placed in a tube furnace, and evacuated to 10 -3 Pa. Then, the temperature was raised to 1000 ° C for 3 h in 300 sccm Ar to cause the reaction to form aluminum borate. Then, the temperature was raised to 1500 ° C, the Ar was turned off to open NH 3 , the reaction was kept at 1500 ° C for 3 h, the NH 3 was turned off, and 200 sccm of Ar was cooled to room temperature, and the hydrazine was taken out to obtain a crude product. Then, the obtained product is washed with water for 5 hours by mechanical stirring, and then filtered and dried to obtain a boron nitride nanosheet powder having a purity of 99% or more. This example can obtain a target product yield of 90%.
  • lithium borate Li 2 B 4 O 7 , Li 3 BO 3 , LiBO 2 , etc.
  • lithium borate Li 2 B 4 O 7 , Li 3 BO 3 , LiBO 2 , etc.
  • ammonia gas Li 2 B 4 O 7 , Li 3 BO 3 , LiBO 2 , etc.
  • the essence is that lithium borate participates in the reaction as an active ingredient, but the chemical essence is hidden in one operation.
  • Embodiments 6 and 7 are the same. It should be understood that any of the foregoing borate formations and participation in the BNNS synthesis reaction are within the scope of the present invention.
  • the low-cost batch preparation method of the boron nitride nanosheet powder provided by some embodiments of the present invention only needs to use a very cheap and readily available solid metal borate as a raw material.
  • the process of synthesizing BNNS by borate nitriding can be completed in one step, the process is simple, the cost is low, the reaction efficiency of the raw material is as high as 85%, the purity of the purified product is as high as 99%, and the boron nitride nanosheet of more than gram can be prepared in a single batch reaction. Powder, can achieve mass production.
  • the pickled product produced during the process can also be purified by crystallization to obtain the corresponding chloride by-product, and can be further used as a raw material to synthesize a borate precursor to achieve recycling and environmental protection.
  • Example 8 A film of about 18 nm thick Al 18 O 4 O 33 (ie, 9Al 2 O 3 ⁇ 2B 2 O 3 ) was deposited on a silicon substrate by magnetron sputtering, and then placed in a tube furnace, first introduced. 1000 standard cc / min (sccm) of Ar removed the air in the furnace tube, then heated to 1300 ° C in 200sccm Ar and 200sccm NH 3 atmosphere and constant temperature reaction for 4h, then NH 3 was turned off, and finally 500sccm Ar was cooled to room temperature.
  • sccm standard cc / min
  • a continuous film of boron nitride nanosheets having a silicon size was obtained, and the continuous film of boron nitride nanosheets was analyzed by infrared, Raman, etc., and the result was confirmed to be boron nitride.
  • the continuous film of the boron nitride nanosheet was observed by TEM, SEM, etc., and it was found that the hexagonal boron nitride nanosheet single crystal having a size of 1 to 50 ⁇ m was aggregated and formed to have a thickness of 1 to 100 atomic layers.
  • Example 9 A B-doped SiO 2 film (in which B is doped at 5 at%) was deposited on a 4-inch silicon substrate by electron beam evaporation, and then placed in a tube furnace to evacuate. To 10 -3 Pa, then heat up to 1100 ° C in a 200 sccm Ar and 200 sccm NH 3 atmosphere and react at a constant temperature for 2 h, then close NH 3 , and finally pass 500 sccm of Ar to cool to room temperature to obtain a nitride having a length and width of 4 inches. Boron nanosheet continuous film.
  • Example 10 A 200 nm Ca 3 B 2 O 6 (i.e., 3CaO ⁇ B 2 O 3 ) film was deposited on a silicon substrate by electron beam evaporation, and then placed in a tube furnace and evacuated to 10 -3 Pa. Then, the temperature was raised to 1400 ° C in 300 sccm NH 3 and the NH 3 was turned off after 1 h of constant temperature reaction. Finally, 200 sccm of Ar was cooled to room temperature to obtain a silicon wafer-sized continuous film of boron nitride nanosheets.
  • Example 11 Using a electron beam evaporation method, a 200 nm Mg 3 B 2 O 6 (ie, 3MgO ⁇ B 2 O 3 ) film was deposited on a silicon substrate, and then placed in a tube furnace, evacuated to 10 -3 Pa, and then The temperature was raised to 1300 ° C in 300 sccm NH 3 and the NH 3 was turned off after 1 h of constant temperature reaction. Finally, 200 sccm of Ar was cooled to room temperature to obtain a silicon wafer-sized continuous film of boron nitride nanosheets.
  • a 200 nm Mg 3 B 2 O 6 (ie, 3MgO ⁇ B 2 O 3 ) film was deposited on a silicon substrate, and then placed in a tube furnace, evacuated to 10 -3 Pa, and then The temperature was raised to 1300 ° C in 300 sccm NH 3 and the NH 3 was turned off after 1 h of constant temperature reaction. Finally, 200 sccm of Ar
  • Example 12 Electron beam evaporation method, a 100 nm ZnB 4 O 7 film was deposited on a silicon substrate, and then placed in a tube furnace, evacuated to 10 -3 Pa, and then heated to 1300 ° C in 300 sccm NH 3 and reacted at a constant temperature. After 1 h, NH 3 was turned off, and finally, 200 sccm of Ar was cooled to room temperature to obtain a silicon wafer-sized continuous film of boron nitride nanosheets.
  • Example 13 A 200 nm Li 2 B 4 O 7 film was deposited on a silicon substrate by electron beam evaporation, then placed in a tube furnace, evacuated to 10 -3 Pa, and then heated to 1200 ° C in 300 sccm NH 3 and After 1 h of constant temperature reaction, NH 3 was turned off, and finally, 200 sccm of Ar was cooled to room temperature to obtain a silicon wafer-sized continuous film of boron nitride nanosheets.
  • Example 14 A 200 nm GaBO 3 (ie, Ga 2 O 3 ⁇ B 2 O 3 ) film was deposited on a silicon substrate by electron beam evaporation, then placed in a tube furnace, evacuated to 10 -3 Pa, and then at 300 sccm. After NH 3 was heated to 1250 ° C and reacted at a constant temperature for 1 h, NH 3 was turned off, and finally, 200 sccm of Ar was cooled to room temperature to obtain a silicon wafer-sized continuous film of boron nitride nanosheets.
  • GaBO 3 ie, Ga 2 O 3 ⁇ B 2 O 3
  • Example 15 A 300 nm InBO 3 (ie, In 2 O 3 ⁇ B 2 O 3 ) film was deposited on a silicon substrate by electron beam evaporation, then placed in a tube furnace, evacuated to 10 -3 Pa, and then at 300 sccm. After NH 3 was heated to 1200 ° C and reacted at a constant temperature for 1 h, NH 3 was turned off, and finally, 200 sccm of Ar was cooled to room temperature to obtain a silicon wafer-sized continuous film of boron nitride nanosheets.
  • InBO 3 ie, In 2 O 3 ⁇ B 2 O 3
  • Example 16 Electrode beam evaporation method, a 200 nm H 2 BeB 4 O 8 film was deposited on a silicon substrate, and then placed in a tube furnace, evacuated to 10 -3 Pa, and then heated to 1200 ° C in 300 sccm NH 3 and After 1 h of constant temperature reaction, NH 3 was turned off, and finally, 200 sccm of Ar was cooled to room temperature to obtain a silicon wafer-sized continuous film of boron nitride nanosheets.
  • Example 17 Using a electron beam evaporation method, a 100 nm Ba 3 B 2 O 6 (ie, 3BaO ⁇ B 2 O 3 ) film was deposited on a silicon substrate, and then placed in a tube furnace, evacuated to 10 -3 Pa, and then The temperature was raised to 1250 ° C in 300 sccm NH 3 and the NH 3 was turned off after 1 h of constant temperature reaction. Finally, 200 sccm of Ar was cooled to room temperature to obtain a silicon wafer-sized continuous film of boron nitride nanosheets.
  • a 100 nm Ba 3 B 2 O 6 (ie, 3BaO ⁇ B 2 O 3 ) film was deposited on a silicon substrate, and then placed in a tube furnace, evacuated to 10 -3 Pa, and then The temperature was raised to 1250 ° C in 300 sccm NH 3 and the NH 3 was turned off after 1 h of constant temperature reaction. Finally, 200 sccm of Ar was
  • Example 18 A 100 nm Sr 3 B 2 O 6 (ie, 3SrO ⁇ B 2 O 3 ) film was deposited on a silicon substrate by electron beam evaporation, then placed in a tube furnace, evacuated to 10 -3 Pa, and then The temperature was raised to 1300 ° C in 300 sccm NH 3 and the NH 3 was turned off after 1 h of constant temperature reaction. Finally, 200 sccm of Ar was cooled to room temperature to obtain a silicon wafer-sized continuous film of boron nitride nanosheets.
  • Example 19 A 200 nm TiBO 3 (i.e., Ti 2 O 3 ⁇ B 2 O 3 ) film was deposited on a silicon substrate by electron beam evaporation, then placed in a tube furnace, evacuated to 10 -3 Pa, and then at 300 sccm. After NH 3 was heated to 1400 ° C and reacted at a constant temperature for 1 h, NH 3 was turned off, and finally, 200 sccm of Ar was cooled to room temperature to obtain a silicon wafer-sized continuous film of boron nitride nanosheets.
  • TiBO 3 i.e., Ti 2 O 3 ⁇ B 2 O 3
  • the method for preparing a boron nitride nanosheet continuous film can directly synthesize boron nitride continuous nanosheets on a substrate (for example, a silicon substrate) ( That is, the boron nitride nanosheet continuous film) does not require the participation of a metal catalyst, and does not require any transfer process, and the process is simple and controllable, and the cost is low.
  • boron nitride nanosheet continuous films can be directly used as a growth substrate for two-dimensional nanomaterials such as graphene, thereby facilitating the construction of a substrate and/or a gate of a graphene device, and have great application prospects, and can realize mass production.
  • Example 20 2 g of Mg 2 B 2 O 5 whiskers having a diameter of about 50 nm and a length of about 10 ⁇ m were placed in an open alumina crucible, then placed in a tube furnace, evacuated to 10 -3 Pa, and passed through 200. Standard milliliters per minute (sccm) of NH 3 was raised to 1300 °C. After a constant temperature reaction at 1300 ° C for 180 min, NH 3 was turned off, 200 sccm of N 2 was introduced , and the mixture was cooled to room temperature in a N 2 atmosphere and taken out to give a crude product.
  • sccm Standard milliliters per minute
  • Fig. 8 is an SEM image of the obtained BNNT (boron nitride nanotube) prepared in the present example.
  • Fig. 9 is a TEM top view of the BNNT obtained in the present embodiment. 10 and 11 are XTD and Raman spectra of the BNNT obtained in the present embodiment, respectively.
  • Example 21 2 g of Al 4 B 2 O 9 nanowhisker was placed in an open alumina crucible and placed in a tube furnace. An air of 1000 standard milliliters per minute (sccm) was introduced to remove air from the furnace tube. The temperature was then raised to 1300 ° C in 200 sccm Ar and 200 sccm NH 3 . After 4 hours of constant temperature reaction at 1300 ° C, NH 3 was turned off, and 500 sccm of Ar was cooled to room temperature, and hydrazine was taken out to obtain a crude product.
  • sccm standard milliliters per minute
  • FIG. 12 is an SEM image of the BNNT obtained in the present example, and it can be observed that the average diameter of the BNNT nanotubes is about 20 nm.
  • Figure 13 is a Raman diagram of the BNNT obtained in the present embodiment.
  • Example 23 A Mg 3 B 2 O 6 nanobelt having a width of 100 nm and a length of 10 ⁇ m was placed in an open alumina crucible, then placed in a tube furnace, and evacuated to 10 -3 Pa. The temperature was then raised to 1400 ° C in 300 sccm NH 3 . After reacting at 1400 ° C for 120 min, NH 3 was turned off, and 200 sccm of Ar was cooled to room temperature, and the hydrazine was taken out to obtain a crude product.
  • the obtained product was subjected to ultrasonic cleaning with 3 mol/L of nitric acid for 5 hours, and then filtered and dried to obtain a boron nitride nanobelt having a width of 100 nm and a length of 10 ⁇ m, and the purity thereof was 99% or more.
  • This example can obtain a target product yield of 85%.
  • Example 24 A Ca 3 B 2 O 6 nanobelt having a width of 200 nm and a length of 100 ⁇ m was placed in an open boron nitride crucible, placed in a tube furnace, and evacuated to 10 -3 Pa. The temperature was then raised to 1250 ° C in 300 sccm NH 3 . After reacting at 1250 ° C for 2 h, the NH 3 was turned off, and 200 sccm of Ar was introduced to cool to room temperature, and the hydrazine was taken out to obtain a crude product.
  • the obtained product was washed with ultrasonic water for 2 hours, filtered and dried to obtain a boron nitride nanobelt having a width of 200 nm and a length of 100 ⁇ m, and the purity was 99% or more.
  • This example can obtain a target product yield of 80%.
  • the foregoing core embodiments of the present invention are merely exemplified by the core contents of some embodiments of the present invention.
  • the core of these embodiments is the borate as a precursor, and in actual production, the nature of the borate as a reactant may be hidden in some reactions and is not easily recognized.
  • boronic acid H 3 BO 3
  • Al(OH) 3 aluminum hydroxide
  • the preparation process of the one-dimensional boron nitride nano material provided by the foregoing embodiment of the present invention is simple and controllable, the raw material is cheap and easy to obtain, the conversion rate of the raw material is as high as 85%, and the purity of the target product after purification is as high as 99. %, and single-batch reaction can prepare one-dimensional boron nitride nanomaterials above gram level, which can realize mass production; and the obtained one-dimensional boron nitride nanomaterials have excellent quality and controllable morphology (such as boron nitride nanometer)
  • the tube (BNNT) has a controllable diameter and wall number.
  • boron nitride nanobelts can be produced at low cost, high efficiency and environmental protection.
  • These one-dimensional boron nitride nanomaterials can be widely used in many fields such as deep ultraviolet luminescence, composite materials, heat dissipating materials, friction materials, drug loading, and catalyst carriers.

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Abstract

一种氮化硼纳米材料、其制备方法与应用。所述的制备方法包括：将前驱物在含氮反应气氛中加热至高温进行反应，制得氮化硼纳米材料；所述前驱物包含硼元素以及至少一种金属元素和/或除硼元素之外的至少一种非金属元素，所述金属元素选自锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中的至少一种，所述非金属元素包括硅。所述氮化硼纳米材料制备方法简单可控，成本低廉，原料廉价易得且转化率高，利于实现批量生产，同时所获的各类氮化硼纳米材料还具有质量优良，形貌可控等优点，在电子器件、深紫外发光、复合材料、散热材料、摩擦材料、药物负载、催化剂负载等诸多领域都极具良好应用前景。

Description

氮化硼纳米材料、其制备方法与应用 技术领域
本发明涉及一类氮化硼材料的制备方法，具体涉及一类氮化硼纳米材料、其制备方法及应用，属于无机纳米材料技术领域。
背景技术
氮化硼纳米材料具有许多优异的物理化学性质，包括优异的机械强度、高的导热系数、宽的直接带隙、良好的化学惰性(耐腐蚀、抗高温氧化性能)以及大的比表面积等，在电子器件、深紫外发光、复合材料、散热材料、摩擦材料、药物负载、催化剂负载等诸多领域有着广泛的应用前景。
例如，氮化硼纳米片(BNNS)具有类似于石墨烯的六元环平面结构，晶格常数与石墨烯最为匹配，被称为“白石墨烯”，其具有优异的电绝缘性、高的导热系数、宽的直接带隙，以及良好的化学惰性(耐腐蚀、抗高温氧化性能)、良好的生物兼容性，以及大的比表面积等。目前BNNS的合成方法有“自上而下法”和“自下而上法”等。“自上而下法”是通过将微米级的BN颗粒逐层剥离，得到BN纳米片。“自上而下法”包括液相剥离法、机械剥离法、液相-机械结合剥离、熔融碱剥离、熔融盐剥离等，这些方法成本低，但是生产周期较长、工艺复杂、效率低下，产量不能满足工业需求。其它诸如“化学鼓泡”法、置换法等也大多存在成本高不利于批量生产、产率低、产物质量差等缺陷。“自下而上法”包括化学气相沉积法(CVD)等。CVD法将含有硼和氮元素的气体(比如BF3和NH3)在高温下反应，或者将同时含有硼和氮元素的气体分子(比如B3N3H6)在高温下分解，在具有催化活性的基底(例如铜、镍、钌等金属基底)表面沉积，得到氮化硼纳米片(或连续的膜)。该方法合成的氮化硼纳米片具有较好的结晶质量和较大的片层尺寸，具有原子级的平整表面，是高质量石墨烯、过渡金属二硫化物等材料的理想衬底材料，在电子器件方面具有广泛的应用前景。但利用现有CVD法制备的BNNS必须转移到硅基底上才能制成器件，而且其产量低、合成工艺复杂，在复合材料、散热材料、摩擦材料、药物负载、催化剂负载等领域的应用尚不具有竞争力。另外，也有研究人员在硅基底上合成氮化硼纳米片，但是该方法仍然需要在硅基底沉积一层金属作为催化剂，生长完后硅基底和氮化硼纳米片之间有金属存在，并不能直接和硅片一起在器件中使用。
又例如，氮化硼纳米管(BNNT)由于其特殊的管状结构以及大的长径比和压电效应 等，可以作为复合材料的增强体、催化剂载体，以及新型的压力传感器等，也可以作为小分子的输运通道以研究其输运机制。目前报道的氮化硼纳米管的合成方法有电弧放电法、激光烧蚀法、球磨退火法、化学气相沉积法、模板法等。但是以上方法对BNNT的管径和壁数的控制仍然是一个难题，而且最重要的是难以实现BNNT的批量制备。
再例如，氮化硼纳米带(BNNR)可以看作是条状的氮化硼纳米片，其宽度介于纳米尺寸。由于其特殊的边带结构，包括具有丰富的不饱和键和可修饰性，进而展现出特异的物理性能，比如受宽度调控的窄带隙和特殊的磁性能等，在纳米电子器件、自旋电子器件、光电子器件、传感器、复合材料等方面有诱人的应用前景。而且在复合材料应用方面，其特殊的边缘结构也使得BNNR与基体有更好的界面键合，表现出比BNNT和BNNS更显著的增强效果。目前氮化硼纳米带的制备方法主要是采用等离子体，或碱金属蒸汽将氮化硼纳米管进行轴向剖切而得到纳米带。然而这些方法对设备要求较高，或者条件较为苛刻且具有一定危险性，以及产量很低。另外一些诸如原位反应生成BNNR的方法等又存在产量低等不足。
纵观当前氮化硼纳米材料的生产技术，较高的成本和较低的效率严重制约了进一步的科学研究与实际应用。开发新型氮化硼材料的低成本、高效率的制备技术，具有十分重要的现实意义。
发明内容
本发明的主要目的在于提供一种氮化硼纳米材料、其制备方法与应用，以克服现有技术中的不足。
为实现前述发明目的，本发明采用的技术方案包括：
本发明实施例提供了一种氮化硼纳米材料的制备方法，其包括：将前驱物在含氮反应气氛中加热至1000～1500℃并保温反应，制得所述氮化硼纳米材料；所述前驱物包含硼元素以及至少一种金属元素和/或除硼元素之外的至少一种非金属元素，所述金属元素选自锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中的至少一种，所述非金属元素包括硅。
在一些实施方案中，所述的制备方法包括：采用固态硼源作为所述前驱物，通过将固态硼源在含氮反应气氛中加热至1000～1500℃并保温反应，之后在保护性气氛中降温至室温，获得粗产物，再对所述粗产物进行后处理，获得氮化硼纳米片粉体；所述固态硼源选自硼酸盐，所述硼源选自含有锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中至少一种元素的硼酸盐。
在一些实施方案中，所述的制备方法包括：所述前驱物采用覆盖在基底上的前驱物 薄膜，通过将所述前驱物薄膜在含氮反应气氛中加热至1000～1400℃并保温反应，制得氮化硼纳米片连续薄膜；所述前驱物薄膜包括至少三种元素，其中的两种元素分别为硼、氧元素，其余元素选自锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛和硅中的任意一种或两种以上的组合。
在一些实施方案中，所述的制备方法包括：采用一维硼酸盐前驱物作为所述前驱物，通过将所述一维硼酸盐前驱物在含氮气氛中加热至1000～1500℃并保温反应，之后在保护气氛中降温至室温而获得粗产物，再对所述粗产物进行后处理，获得一维氮化硼纳米材料；所述一维硼酸盐前驱物选自包含锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中至少一种元素的一维硼酸盐材料。
本发明实施例还提供了由前述方法制备的多种氮化硼纳米材料，包括氮化硼纳米片粉体、氮化硼纳米片连续薄膜、一维氮化硼纳米材料等。
本发明实施例还提供了由前述方法制备的多种氮化硼纳米材料的用途。
较之现有技术，本发明提供的氮化硼纳米材料制备方法简单可控，成本低廉，原料大多廉价易得且转化率高，利于实现批量生产，同时所获的各种氮化硼纳米材料还具有质量优良，形貌可控等优点，在电子器件、深紫外发光、复合材料、散热材料、摩擦材料、药物负载、催化剂负载等诸多领域都极具良好应用前景。
附图说明
图1为本实施例1中所得BN纳米片粉体的实物照片。
图2为本实施例1中所得BNNS粉体的TEM形貌图片。
图3为本实施例2中所得BN纳米片的SEM图。
图4为本实施例2中所得的BNNS的XRD图。
图5为本实施例2中所得产物的TEM图。
图6为本实施例3中获得的BNNS的拉曼图谱。
图7为本实施例4中获得的BNNS的TEM图。
图8为本实施例20中所得BNNT的SEM图。
图9为本实施例20中所得BNNT的TEM图。
图10为本实施例20中所得BNNT的XRD图。
图11为本实施例20中所得的BNNT的拉曼图。
图12为本实施例21中所得BNNT的SEM图。
图13为本实施例21中获得的BNNT的拉曼图谱。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面对本发明的具体实施方式进行详细说明。本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。
本发明实施例提供的一种氮化硼纳米材料的制备方法可以包括：将前驱物在含氮反应气氛中加热至1000～1500℃并保温反应，制得所述氮化硼纳米材料；所述前驱物包含硼元素以及至少一种金属元素和/或除硼元素之外的至少一种非金属元素，所述金属元素选自锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中的至少一种，所述非金属元素包括硅。
进一步的，本案发明人经长期研究和大量实践发现，当采用含有锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中的至少一种元素的硼酸盐在高温条件下与氨气、氮气等氮源反应时，可以高产率的获得高质量的二维氮化硼纳米片。
相应的，在本发明的一些实施方案中，所述的制备方法可以包括：采用固态硼源作为所述前驱物，通过将固态硼源在含氮反应气氛中加热至1000～1500℃并保温反应，之后在保护性气氛中降温至室温，获得粗产物，再对所述粗产物进行后处理，获得氮化硼纳米片粉体；所述固态硼源选自硼酸盐，所述硼源选自含有锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中至少一种元素的硼酸盐。
前述实施方案中的所述固态硼源可以优选自硼酸钙(CaB4O7、Ca2B2O5、Ca3B2O6)、硼酸镁(MgB4O7、MgB2O5、Mg3B2O6)、硼酸锂(Li2B4O7)以及铝、锌等金属的硼酸盐，或其之间的混合物，并且这些硼盐的几乎所有晶型在本发明的前述实施方案中都是适用的。
较为优选的，所述制备方法还可包括：将硼源在反应气氛中加热至高于1250℃而小于或等于1500℃的温度且保温反应。
进一步优选的，所述制备方法还可包括：将硼源在反应气氛中加热至高于1250℃而小于或等于1500℃且保温反应0.5h以上，例如0.5h～5h。
前述实施方案中的含氮反应气氛可优选自氨气气氛、氮气气氛或者氨气及氮气中的至少一种与氩气形成的混合气氛，但不限于此。
前述实施方案中的保护性气氛可优选自氮气气氛、氩气气氛或者氮气-氩气混合气氛，但不限于此。
在前述实施方案中，所述后处理可以包括：将所述粗产物以酸溶液洗涤、过滤，再在60～80℃干燥1h～12h，获得所述氮化硼纳米片。
前述实施方案中的粗产物为氮化硼纳米片与相应的金属氧化物的复合、混合体，其中氧化物为副产物，可以用酸洗掉。
例如，所述酸溶液的浓度可以选用任意合适浓度的，例如优选大于0.1mol/L，其中所含的酸能与所述粗产物中的副产物反应形成可溶性物质。
在前述实施方案中，所述后处理还可具体包括：配合机械方法，以酸溶液对所述粗产物进行充分洗涤；所述机械方法包括搅拌或球磨。该洗涤过程配合机械方法，可使洗涤彻底。
在前述实施方案中，所述制备方法还可具体包括：在所述的后处理中，收集所述粗产物中的副产物与洗涤用酸溶液反应形成的可溶性副产物，并用于合成所述硼源。例如，副产物MgO经酸洗后形成相应的盐溶液(MgCl2、Mg(NO3)2、MgSO4等溶液)，经过提取结晶，可以当做原料再次用来合成硼酸镁，是一种绿色环保的合成方法。
藉由前述实施方案制备的氮化硼纳米片粉体为纯度在99％以上的六方氮化硼纳米片，所述六方氮化硼纳米片的厚度为1～20原子层，径向尺寸为1～20μm。
在本发明的一典型实施案例中，一种氮化硼纳米材料的制备方法是一种氮化硼纳米片粉体的低成本批量制备方法，其可包括以下步骤：
(1)将硼源在含有氨气的气氛中加热至1000～1500℃(优选为高于1250℃而小于或等于1500℃)，保温0.5～5h，在氮气或氩气的保护下降温至室温，得到白色粗产物。
(2)将步骤(1)所获的粗产物提纯、过滤、干燥，可得纯度在99％以上的氮化硼纳米片粉体。
藉由前述的方法，根据前驱物的量和设备体积，单批次的产量可达克级以上。在较优合成条件下，净产率(以硼当量计算)高达85％。
更为具体的，前述实施方案中涉及以下化学反应(以三种成分的硼酸镁在氨气中反应为例)：
MgB4O7+4NH3→4BN+MgO+6H2O
Mg2B2O5+2NH3→2BN+2MgO+3H2O。
Mg3B2O6+2NH3→2BN+3MgO+3H2O
优选地，前述步骤(1)可以包括：将硼源在含有氨气的气氛中加热至1000～1500℃并保温0.5～4h，在氮气或氩气的保护下降温至室温，得到白色粗产物。例如，其中一种反应的方程式为：Li2B4O7+4NH3→4BN+Li2O+6H2O。
优选地，前述步骤(2)中所述的提纯可以包括：用水洗3～5遍。经过水洗、过滤等操作，可以高效去除反应副产物，得到高纯度的BN纳米片。
优选的，前述步骤(2)中所述的干燥可以包括：在60～80℃下干燥6h～12h。
通过前述实施方案，特别是前述典型实施案例制备得到的一类六方氮化硼二维超薄纳米片(六方氮化硼纳米片)的厚度为1～20原子层，大小为1～20μm，宏观上呈粉体 形态。
藉由前述实施方案制备的六方氮化硼二维超薄纳米片可应用于深紫外发光、复合材料、散热材料、摩擦材料、药物负载、催化剂载体等诸多领域。
在本发明的另一些实施方案中，所述的制备方法可以包括：所述前驱物采用覆盖在基底上的前驱物薄膜，通过将所述前驱物薄膜在含氮反应气氛中加热至1000～1400℃并保温反应，制得氮化硼纳米片连续薄膜；所述前驱物薄膜包括至少三种元素，其中的两种元素分别为硼、氧元素，其余元素选自锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛和硅中的任意一种或两种以上的组合。
进一步的，前述前驱物薄膜的成分可以表示为(MxOy)m·(B2O3)n，其中m/n为1:10～1000:1，若M为一价金属离子(例如锂等)，则x＝2y，而若M为二价金属离子(例如铍、镁、钙、锶、钡，锌等)，则x＝y，若M为三价金属离子(例如铝、镓、铟、钛等)，2y＝3x，若M为四价的硅离子，则y＝2x。
优选的，前述实施方案中的前驱物薄膜可以直接形成于所述基底表面。
优选的，前述实施方案中的前驱物薄膜包含的前驱物为(Al2O3)m·(B2O3)n，其中m/n为1:1～1000:1.
优选的，前述实施方案中的前驱物薄膜包含的前驱物为(SiO2)m·(B2O3)n，其中m/n为1:1～1000:1.。
在前述的实施方案中，所述制备方法具体可以包括：
(1)在基底上沉积一层前驱物薄膜；
(2)在含有氨气和\或氮气的气氛下进行高温反应，得到所述氮化硼纳米片连续薄膜。
作为较为优选的实施案例之一，所述制备方可以包括：采用磁控溅射法，在基底上沉积一层BxSi1-xO前驱物薄膜，厚度在1～500nm；然后在含有氨气的气氛下进行高温反应，得到所述氮化硼纳米片连续薄膜。
作为较为优选的实施案例之一，所述的制备方法也可以包括：在基底上覆设所述前驱物薄膜，之后在含氮反应气氛中加热至1000～1400℃并保温反应10min以上，例如10min～300min，从而在所述基底表面形成所述氮化硼纳米片连续薄膜。
作为较为优选的实施案例之一，所述的制备方法亦可以包括：在基底(例如硅基底)上覆设所述前驱物薄膜，之后在含氮反应气氛中加热至1000～1400℃并保温反应，从而在所述基底表面形成所述氮化硼纳米片连续薄膜，以及在所述基底和氮化硼纳米片连续薄膜上形成金属氧化物层或氧化硅层等绝缘介质层，如此不仅不妨碍甚至有利于后续器件的设计和制作。
在前述的这些实施方案中，具有代表性的反应方程式如下：
(Al2O3)m·(B2O3)n+2nNH3---mAl2O3+2nBN+3nH2O
(SiO2)m·(B2O3)n+2nNH3---mSiO2+2nBN+3nH2O。
在前述的这些实施方案中，所述的制备方法还可以包括：采用磁控溅射、电子束蒸镀、热蒸镀、脉冲激光沉积、分子束外延和原子层沉积中的至少一种方式于所述基底表面沉积形成所述前驱物薄膜。
优选的，前述实施方案中的前驱物薄膜的厚度为1～500nm。
优选的，前述实施方案中的含氮反应气氛选自氨气和/或氮气或氨气和/或氮气与稀释气体形成的混合气氛，所述稀释气体包括惰性气体(例如氩气)，但不限于此。
优选的，前述实施方案中的基底包括硅(Si)基底或氧化硅(Si/SiO2)基底，且不限于此。
优选的，前述实施方案中的氮化硼纳米片连续薄膜与基底之间无金属催化剂层。
进一步优选的，前述实施方案中的氮化硼纳米片连续薄膜直接生长于所述基底表面。
藉由前述实施方案制备的氮化硼纳米片连续薄膜由尺寸为1～50μm的六方氮化硼纳米片单晶聚集(类似多晶体拼接形式，有晶界)而成，薄膜厚度介于1～100原子层。
本发明实施例的还提供了藉由前述实施方案制备的氮化硼纳米片连续薄膜的用途，例如在制备二维纳米材料或包含二维纳米材料的器件中的用途。
前述二维纳米材料包括石墨烯等，且不限于此。
在一些典型的实施案例中，可以直接在硅基底上合成前述氮化硼纳米片连续薄膜，无需任何转移工序。并且前述氮化硼纳米片连续薄膜可直接作为石墨烯生长的基底，构成石墨烯器件的衬底和/或栅极，工艺简单可控，在石墨烯器件方面有着巨大的应用前景，能实现批量生产。
进一步的，本案发明人经长期研究和大量实践还发现，当采用含有锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中的至少一种元素的一维硼酸盐前驱物在高温条件下与氨气、氮气等氮源反应时，可以高产率的获得高质量的一维氮化硼纳米材料。
相应的，在本发明的再一些实施方案中，所述的制备方法可以包括：采用一维硼酸盐前驱物作为所述前驱物，通过将所述一维硼酸盐前驱物在含氮气氛中加热至1000～1500℃并保温反应，之后在保护气氛中降温至室温而获得粗产物，再对所述粗产物进行后处理，获得一维氮化硼纳米材料；所述一维硼酸盐前驱物选自包含锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中至少一种元素的一维硼酸盐材料。
前述实施方案中的所述一维硼酸盐材料可以选自硼酸盐晶须、硼酸盐纳米棒、硼酸盐纳米线、硼酸盐纳米带等，且不限于此。
优选的，所述的制备方法包括：将所述一维硼酸盐前驱物在含氮气氛中加热至高于1200℃而小于或等于1500℃的温度并保温反应。
进一步优选的，所述的制备方法包括：将所述一维硼酸盐前驱物在含氮气氛中加热至高于1200℃而小于或等于1300℃的温度并保温反应一定时间，例如0.5h以上，优选如0.5h～5h。
前述实施方案中的所述含氮反应气氛包括氨气气氛、氮气气氛或者氨气及氮气中的至少一种与氩气形成的混合气氛，但不限于此。
前述实施方案中的所述保护性气氛包括氮气气氛、氩气气氛或者氮气-氩气气氛，但不限于此。
在一些实施方案中，所述后处理包括：将所述粗产物以酸溶液洗涤、过滤、干燥，获得所述一维氮化硼纳米材料。
在一些较为具体的实施方案中，所述后处理包括：将所述粗产物以酸溶液洗涤、过滤，再在60～80℃干燥1～12h，获得所述一维氮化硼纳米材料。
进一步的，所述酸溶液的浓度优选为0.1～6mol/L，其中所含的酸能与所述粗产物中的副产物反应形成可溶性物质。
优选的，所述的制备方法还可以包括：在所述的后处理中，收集所述粗产物中的副产物与洗涤用酸溶液反应形成的可溶性副产物，并用于合成所述一维硼酸盐前驱物。
在本发明的一典型实施案例中，所述的制备方法还可以包括以下步骤：
(1)将硼源在含有氨气的气氛中加热至1000～1500℃(优选为大于1200而小于或等于1300℃)，保温0.5～5h，在氮气或氩气的保护气氛下降温至室温，得到白色粗产物；
(2)将步骤(1)所获得的粗产物提纯、过滤、干燥，得到纯度在99％以上的一维氮化硼纳米材料。
藉由前述方法，根据前驱物的量和设备体积，单批次的产量可达克级以上，在较优合成条件下，经产率(以硼当量计算)高达85％。
藉由前述实施方案中的方法制备的一维氮化硼纳米材料包括氮化硼纳米管、氮化硼纳米带等，所述一维氮化硼纳米材料的结构、形貌等取决于前驱物的形貌和结构。
进一步的，所述氮化硼纳米管壁厚介于单原子层到多原子层，其长度和直径取决于所采用的前驱物晶须或纳米线的长度和直径。
进一步的，所述氮化硼纳米带厚度介于单原子层到多原子层，宽度和长度为取决于所采用的硼酸盐纳米带的宽度和长度。
藉由前述实施方案中的方法制备的所述一维氮化硼纳米材料可应用于深紫外发光、 复合材料、散热材料、摩擦材料、药物负载、催化剂载体等诸多领域。
以下结合附图及若干实施例对本发明的技术方案进行详细说明。
实施例1：取CaB4O7 2g盛于敞口氧化铝坩埚中，然后置入管式炉中，抽真空至10-3Pa，通入200标准毫升/分钟(sccm)的NH3，升温到1250℃。在1250℃恒温反应180min后关闭NH3，通入200sccm的N2，在N2气氛中降温至室温，取出，得到粗产物。然后将所得产物采用超声水洗5h，再过滤、干燥，可得纯度在99％以上的氮化硼纳米片粉体。本实施例可以获得95％的目标产物产率。图1为本实施例制备所得BN纳米片粗产物的实物照片。图2为本实施例所得BNNS粉体的TEM形貌图，可见其尺寸在微米级别。
实施例2：取Mg2B2O5 2g置于敞口氧化铝坩埚中，然后放入管式炉中。通入1000标准毫升/分钟(sccm)的Ar排除炉管内的空气。然后再200sccm Ar和200sccm NH3中升温到1300℃。在1300℃恒温反应4h后关闭NH3，通入500sccm的Ar降温至室温，取出坩埚得到粗产物。然后将所得产物采用3mol/L硝酸，超声酸洗1h，再过滤、干燥，可得纯度在99％以上的氮化硼纳米片粉体。本实施例可以获得85％的目标产物产率。图3为本实施例所得BN纳米片的SEM图，可以观察到鳞片状的BN纳米片。图4为本实施例获得的BNNS的XRD图，证实所得产物为单一物相的六方BN。图5为本实施例获得产物的TEM图，证实产物为纳米片，片层尺寸在微米尺度。
实施例3：取Al4B2O9置于敞口氧化铝坩埚中，然后放入管式炉中，抽真空到10-3Pa。然后在300sccm NH3中升温到1500℃。在1500℃恒温反应120min后关闭NH3，通入200sccm的Ar降温至室温，取出坩埚得到粗产物。然后将所得产物采用3mol/L硝酸，超声酸洗5h，再过滤、干燥，可得纯度在99％以上的氮化硼纳米片粉体。本实施例可以获得95％的目标产物产率。图6为本实施例获得的BNNS的拉曼图谱，由1367.9cm-1的峰可以判定为六方结构BN。
实施例4：取ZnB4O7若干置于敞口的氮化硼坩埚中，然后放入管式炉中，抽真空到10-3Pa。然后在300sccm NH3中升温到1300℃。在1300℃恒温反应2h后关闭NH3，通入200sccm的Ar降温至室温，取出坩埚得到粗产物。然后将所得产物采用超声水洗2h，再过滤、干燥，可得纯度在99％以上的氮化硼纳米片粉体。本实施例可以获得80％的目标产物产率。图7为本实施例获得的BNNS的TEM图，由图可见其纳米片的厚度约为15个原子层。
实施例5：取LiOH和B2O3若干，以1:1的比例混合，置于敞口的氮化硼坩埚中，然后放入管式炉中，抽真空到10-3Pa。然后在300sccm Ar中升温到800℃保温1h使得反应生成硼酸锂Li2B4O7。然后再升温到1300℃，关闭Ar打开NH3，在1300℃恒温反应3h后关闭NH3，通入200sccm的Ar降温至室温，取出坩埚得到粗产物。然后将所得产 物采用机械搅拌的方式进行水洗5h，再过滤、干燥，可得纯度在99％以上的氮化硼纳米片粉体。本实施例可以获得80％的目标产物产率。
实施例6：取MgO和B2O3若干，以2:1的比例混合，置于敞口的氮化硼坩埚中，然后放入管式炉中，抽真空到10-3Pa。然后在300sccm Ar中升温到1000℃保温3h，使得反应生成硼酸镁。然后再升温到1400℃，关闭Ar打开NH3，在1400℃恒温反应3h后关闭NH3，通入200sccm的Ar降温至室温，取出坩埚得到粗产物。然后将所得产物采用机械搅拌的方式进行水洗5h，再过滤、干燥，可得纯度在99％以上的氮化硼纳米片粉体。本实施例可以获得85％的目标产物产率。
实施例7：取Al(OH)3和H3BO3若干，以9:2的比例混合，置于敞口的氮化硼坩埚中，然后放入管式炉中，抽真空到10-3Pa。然后在300sccm Ar中升温到1000℃保温3h，使得反应生成硼酸铝。然后再升温到1500℃，关闭Ar打开NH3，在1500℃恒温反应3h后关闭NH3，通入200sccm的Ar降温至室温，取出坩埚得到粗产物。然后将所得产物采用机械搅拌的方式进行水洗5h，再过滤、干燥，可得纯度在99％以上的氮化硼纳米片粉体。本实施例可以获得90％的目标产物产率。
需说明的是，前述实施例1-7中仅从本发明的一些实施方案中的核心内容作以举例说明，这些实施方案的核心是以硼酸盐作为前驱物，而在实际的生产中，硼酸盐作为反应物的本质可能隐匿在某些反应过程中不容易被认识到。比如，实施例5中，以氧化硼(B2O3)、氢氧化锂(LiOH)为前驱物制备氮化硼为例，在加热过程中实际发生了两个化学反应：一是LiOH和B2O3生成硼酸锂(Li2B4O7、Li3BO3、LiBO2等)，二是硼酸锂(Li2B4O7、Li3BO3、LiBO2等)与氨气反应。其本质仍然是硼酸锂作为有效成分参与反应，只是该化学本质在一步操作过程中被隐藏。实施例6、7同理。应当理解，只要有前述的任一种硼酸盐生成并参与了BNNS合成反应的，都在本发明专利的涵盖范围之内。
藉由前述实施例1-实施例7可以看到，本发明的一些实施方案提供的氮化硼纳米片粉体低成本批量制备方法只需采用非常廉价易得的固态金属硼酸盐为原料，而且硼酸盐氮化合成BNNS的工艺可以一步完成，工序简单，成本低廉，原料反应效率高达85％，提纯后产物纯度高达99％，单批次反应可制备克级以上的氮化硼纳米片粉体，能实现批量生产。此外，在工艺过程中产生的酸洗产物还可以通过结晶提纯得到相应的氯化物副产品，并可以进一步作为原材料合成硼酸盐前躯体，实现循环利用，绿色环保。
实施例8：采用磁控溅射法，在硅基底沉积约100nm厚的Al18O4O33(即9Al2O3·2B2O3)薄膜，然后放入管式炉中，首先通入1000标准毫升/分钟(sccm)的Ar排除炉管内的空气，然后在200sccm Ar和200sccm NH3氛围中升温到1300℃并恒温反应4h后关闭NH3，最后通入500sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜，以红外、 拉曼等方式对该氮化硼纳米片连续膜进行分析，结果证实为氮化硼。再以TEM、SEM等方式对该氮化硼纳米片连续膜进行观察，可以发现其由尺寸为1～50μm的六方氮化硼纳米片单晶聚集形成，厚度介于1～100原子层。
实施例9：采用电子束蒸镀法，在4英寸的硅基底沉积约500nm厚的B掺杂的SiO2薄膜(其中B的掺杂量为5at％)，然后放入管式炉中抽真空至10-3Pa，然后在200sccm Ar和200sccm NH3氛围中升温到1100℃并恒温反应2h后关闭NH3，最后通入500sccm的Ar降温至室温，制得长宽尺寸为4英寸的氮化硼纳米片连续膜。
实施例10：采用电子束蒸镀法，硅基底沉积200nm Ca3B2O6(即3CaO·B2O3)薄膜，然后放入管式炉中，抽真空到10-3Pa。然后在300sccm NH3中升温到1400℃并恒温反应1h后关闭NH3，最后通入200sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜。
实施例11：采用电子束蒸镀法，硅基底沉积200nm Mg3B2O6(即3MgO·B2O3)薄膜，然后放入管式炉中，抽真空到10-3Pa，然后在300sccm NH3中升温到1300℃并恒温反应1h后关闭NH3，最后通入200sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜。
实施例12：采用电子束蒸镀法，硅基底沉积100nm ZnB4O7薄膜，然后放入管式炉中，抽真空到10-3Pa，然后在300sccm NH3中升温到1300℃并恒温反应1h后关闭NH3，最后通入200sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜。
实施例13：采用电子束蒸镀法，硅基底沉积200nm Li2B4O7薄膜，然后放入管式炉中，抽真空到10-3Pa，然后在300sccm NH3中升温到1200℃并恒温反应1h后关闭NH3，最后通入200sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜。
实施例14：采用电子束蒸镀法，硅基底沉积200nm GaBO3(即Ga2O3·B2O3)薄膜，然后放入管式炉中，抽真空到10-3Pa，然后在300sccm NH3中升温到1250℃并恒温反应1h后关闭NH3，最后通入200sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜。
实施例15：采用电子束蒸镀法，硅基底沉积300nm InBO3(即In2O3·B2O3)薄膜，然后放入管式炉中，抽真空到10-3Pa，然后在300sccm NH3中升温到1200℃并恒温反应1h后关闭NH3，最后通入200sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜。
实施例16：采用电子束蒸镀法，硅基底沉积200nm H2BeB4O8薄膜，然后放入管式炉中，抽真空到10-3Pa，然后在300sccm NH3中升温到1200℃并恒温反应1h后关闭NH3，最后通入200sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜。
实施例17：采用电子束蒸镀法，硅基底沉积100nm Ba3B2O6(即3BaO·B2O3)薄膜，然后放入管式炉中，抽真空到10-3Pa，然后在300sccm NH3中升温到1250℃并恒温反应1h后关闭NH3，最后通入200sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜。
实施例18：采用电子束蒸镀法，硅基底沉积100nm Sr3B2O6(即3SrO·B2O3)薄膜，然后放入管式炉中，抽真空到10-3Pa，然后在300sccm NH3中升温到1300℃并恒温反应1h后关闭NH3，最后通入200sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜。
实施例19：采用电子束蒸镀法，硅基底沉积200nm TiBO3(即Ti2O3·B2O3)薄膜，然后放入管式炉中，抽真空到10-3Pa，然后在300sccm NH3中升温到1400℃并恒温反应1h后关闭NH3，最后通入200sccm的Ar降温至室温，制得硅片尺寸的氮化硼纳米片连续膜。
藉由前述实施例8-实施例19可以看到，本发明的一些实施方案提供的氮化硼纳米片连续薄膜的制备方法可以直接在基底(例如硅基底)上合成氮化硼连续纳米片(即氮化硼纳米片连续薄膜)，无需金属催化剂的参与，也无需任何转移工序，工艺简单可控，成本低廉。这些氮化硼纳米片连续薄膜可直接作为石墨烯等二维纳米材料的生长基底，进而利于构建石墨烯器件的衬底和/或栅极等，具有巨大的应用前景，能实现批量生产。
实施例20：取直径约50nm、长度约10μm的Mg2B2O5晶须2g盛于敞口氧化铝坩埚中，然后置入管式炉中，抽真空至10-3Pa，通入200标准毫升/分钟(sccm)的NH3，升温到1300℃。在1300℃恒温反应180min后关闭NH3，通入200sccm的N2，在N2气氛中降温至室温，取出，得到粗产物。然后将所得产物采用超声水洗5h，再过滤、干燥，可得纯度在99％以上的氮化硼纳米管。所得纳米管直径约500nm，长度10μm。本实施例可以获得95％的目标产物产率。图8为本实施例制备所得BNNT(氮化硼纳米管)的SEM图。图9为本实施例所得BNNT的TEM形貌图。图10和图11分别为本实施案例所得BNNT的XTD图和拉曼图谱。
实施例21：取Al4B2O9纳米晶须2g置于敞口氧化铝坩埚中，然后放入管式炉中。通入1000标准毫升/分钟(sccm)的Ar排除炉管内的空气。然后再200sccm Ar和200sccm NH3中升温到1300℃。在1300℃恒温反应4h后关闭NH3，通入500sccm的Ar降温至室温，取出坩埚得到粗产物。然后将所得产物采用3mol/L硝酸，超声酸洗1h，再过滤、干燥，可得纯度在99％以上的氮化硼纳米管。本实施例可以获得90％的目标产物产率。图12为本实施例所得BNNT的SEM图，可以观察到该BNNT纳米管的平均直径约为20nm。图13为本实施例获得的BNNT的拉曼图。
实施例23：取宽度100nm、长度10μm的Mg3B2O6纳米带置于敞口氧化铝坩埚中，然后放入管式炉中，抽真空到10-3Pa。然后在300sccm NH3中升温到1400℃。在1400℃恒温反应120min后关闭NH3，通入200sccm的Ar降温至室温，取出坩埚得到粗产物。然后将所得产物采用3mol/L硝酸，超声酸洗5h，再过滤、干燥，可得宽度100nm，长度10μm的氮化硼纳米带，其纯度在99％以上。本实施例可以获得85％的目标产物产率。
实施例24：取宽度200nm、长度100μm的Ca3B2O6纳米带若干置于敞口的氮化硼坩埚中，然后放入管式炉中，抽真空到10-3Pa。然后在300sccm NH3中升温到1250℃。在1250℃恒温反应2h后关闭NH3，通入200sccm的Ar降温至室温，取出坩埚得到粗产物。然后将所得产物采用超声水洗2h，再过滤、干燥，可得宽度200nm，长度100μm的氮化硼纳米带，纯度在99％以上。本实施例可以获得80％的目标产物产率。
同样的，前述实施例20-24中仅从本发明一些实施方案的核心内容作以举例说明。这些实施方案的核心是以硼酸盐作为前驱物，而在实际的生产中，硼酸盐作为反应物的本质可能隐匿在某些反应过程中不容易被认识到。比如，以硼酸(H3BO3)、氢氧化铝(Al(OH)3)为前驱物制备氮化硼纳米管为例，在加热过程中实际发生了两个化学反应：一是H3BO3和Al(OH)3生成硼酸铝纳米晶须，二是硼酸铝纳米晶须与氨气反应得到氮化硼纳米管。其本质仍然是硼酸铝作为有效成分参与反应，只是该化学本质在一步操作过程中被隐藏。应当理解，只要有一维硼酸盐生成并参与了BNNT或者BNNR合成反应的，也都在本发明专利的涵盖范围之内。
藉由前述实施例20-24可以证明，本发明前述实施方案提供的一维氮化硼纳米材料制备工艺简单可控，原料廉价易得，原料转化率高达85％，提纯后目标产物纯度高达99％，且单批次反应可制备克级以上的一维氮化硼纳米材料，能实现批量生产；而且所获的一维氮化硼纳米材料质量优良，形貌可控(例如氮化硼纳米管(BNNT)的管径和壁数可控)，能安全、环保、低成本的批量化生产(特别是氮化硼纳米带可低成本、高效率、环保的生产)。这些一维氮化硼纳米材料可被广泛应用于深紫外发光、复合材料、散热材料、摩擦材料、药物负载、催化剂载体等诸多领域。
应当理解，上述实施例仅为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

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  1. 一种氮化硼纳米材料的制备方法，其特征在于包括：将前驱物在含氮反应气氛中加热至1000～1500℃并保温反应，制得所述氮化硼纳米材料；所述前驱物包含硼元素以及至少一种金属元素和/或除硼元素之外的至少一种非金属元素，所述金属元素选自锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中的至少一种，所述非金属元素包括硅。
  2. 根据权利要求1所述的制备方法，其特征在于包括：采用固态硼源作为所述前驱物，通过将固态硼源在含氮反应气氛中加热至1000～1500℃并保温反应，之后在保护性气氛中降温至室温，获得粗产物，再对所述粗产物进行后处理，获得氮化硼纳米片粉体；所述固态硼源选自硼酸盐，所述硼源选自含有锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中至少一种元素的硼酸盐。
  3. 根据权利要求2所述的制备方法，其特征在于：所述固态硼源选自硼酸钙、硼酸镁、硼酸锂、铝的硼酸盐、锌的硼酸盐中的任意一种或两种以上的组合。
  4. 根据权利要求2所述的制备方法，其特征在于包括：将所述固态硼源在含氮反应气氛中加热至高于1250℃而小于或等于1500℃的温度并保温反应。
  5. 根据权利要求4所述的制备方法，其特征在于包括：将所述固态硼源在含氮反应气氛中加热至高于1250℃而小于或等于1500℃的温度且保温0.5h以上。
  6. 根据权利要求2所述的制备方法，其特征在于：所述含氮反应气氛选自氨气气氛、氮气气氛或者氨气及氮气中的至少一种与氩气形成的混合气氛。
  7. 根据权利要求2所述的制备方法，其特征在于：所述保护性气氛包括氮气气氛、氩气气氛或者氮气-氩气混合气氛。
  8. 根据权利要求2所述的制备方法，其特征在于，所述的后处理包括：将所述粗产物以酸溶液洗涤、过滤，再在60～80℃干燥1～12h，获得所述氮化硼纳米片；所述酸溶液的浓度为0.1～6mol/L，其中所含的酸能与所述粗产物中的副产物反应形成可溶性物质。
  9. 根据权利要求2或8所述的氮化硼纳米片粉体的低成本批量制备方法，其特征在于还包括：在所述的后处理中，收集所述粗产物中的副产物与洗涤用酸溶液反应形成的可溶性副产物，并用于合成所述固态硼源。
  10. 根据权利要求2或8所述的制备方法，其特征在于，所述后处理还包括：配合机械或超声方法，以酸溶液对所述粗产物进行充分洗涤；所述机械方法包括搅拌或球磨。
  11. 根据权利要求1所述的制备方法，其特征在于包括：所述前驱物采用覆盖在基底上的前驱物薄膜，通过将所述前驱物薄膜在含氮反应气氛中加热至1000～1400℃并保 温反应，制得氮化硼纳米片连续薄膜；所述前驱物薄膜包括至少三种元素，其中的两种元素分别为硼、氧元素，其余元素选自锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛和硅中的任意一种或两种以上的组合。
  12. 根据权利要求11所述的制备方法，其特征在于：所述前驱物薄膜直接形成于所述基底表面。
  13. 根据权利要求11所述的制备方法，其特征在于：所述前驱物薄膜包含的前驱物的成分为(MxOy)m·(B2O3)n，其中M选自锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛和硅中的任意一种或两种以上的组合，m/n＝1:10～1000:1，若M为一价金属离子，则x＝2y，若M为二价金属离子，则x＝y，若M为三价金属离子，则2y＝3x，若M为四价Si离子，则y＝2x。
  14. 根据权利要求11或13所述的制备方法，其特征在于包括：在基底上覆设所述前驱物薄膜，之后在含氮反应气氛中加热至1000～1400℃并保温反应，从而在所述基底表面形成所述氮化硼纳米片连续薄膜，以及在所述基底和氮化硼纳米片连续薄膜上形成金属氧化物层或氧化硅层。
  15. 根据权利要求11所述的制备方法，其特征在于包括：采用磁控溅射、电子束蒸镀、热蒸镀、脉冲激光沉积、分子束外延和原子层沉积中的至少一种方式于所述基底表面沉积形成所述前驱物薄膜。
  16. 根据权利要求11所述的制备方法，其特征在于：所述前驱物薄膜的厚度为1～500nm。
  17. 根据权利要求11所述的制备方法，其特征在于：所述含氮反应气氛选自氨气和/或氮气或氨气和/或氮气与稀释气体形成的混合气氛，所述稀释气体包括惰性气体；和/或，所述基底包括硅基底或氧化硅基底。
  18. 根据权利要求11所述的制备方法，其特征在于：所述氮化硼纳米片连续薄膜与基底之间无金属催化剂层。
  19. 根据权利要求1所述的制备方法，其特征在于包括：采用一维硼酸盐前驱物作为所述前驱物，通过将所述一维硼酸盐前驱物在含氮气氛中加热至1000～1500℃并保温反应，之后在保护气氛中降温至室温而获得粗产物，再对所述粗产物进行后处理，获得一维氮化硼纳米材料；所述一维硼酸盐前驱物选自包含锂、铍、镁、钙、锶、钡、铝、镓、铟、锌、钛中至少一种元素的一维硼酸盐材料。
  20. 根据权利要求19所述的制备方法，其特征在于：所述一维硼酸盐材料包括硼酸盐晶须、硼酸盐纳米棒、硼酸盐纳米线、硼酸盐纳米带中的任意一种。
  21. 根据权利要求19所述的制备方法，其特征在于包括：将所述一维硼酸盐前驱物 在含氮气氛中加热至高于1200℃而小于或等于1500℃的温度并保温反应。
  22. 根据权利要求21所述的制备方法，其特征在于包括：将所述一维硼酸盐前驱物在含氮气氛中加热至高于1200℃而小于或等于1300℃的温度并保温反应。
  23. 根据权利要求19所述的制备方法，其特征在于：所述含氮反应气氛包括氨气气氛、氮气气氛或者氨气及氮气中的至少一种与氩气形成的混合气氛。
  24. 根据权利要求19所述的制备方法，其特征在于：所述保护性气氛包括氮气气氛、氩气气氛或者氮气-氩气混合气氛。
  25. 根据权利要求19所述的制备方法，其特征在于：所述后处理包括：将所述粗产物以酸溶液洗涤、过滤，再在60～80℃干燥1h～12h，获得所述一维氮化硼纳米材料，所述酸溶液的浓度为0.1～6mol/L，其中所含的酸能与所述粗产物中的副产物反应形成可溶性物质。
  26. 根据权利要求19或25所述的制备方法，其特征在于还包括：在所述的后处理中，收集所述粗产物中的副产物与洗涤用酸溶液反应形成的可溶性副产物，并用于合成所述一维硼酸盐前驱物。
  27. 由权利要求2-10中任一项所述方法制备的氮化硼纳米片粉体，所述氮化硼纳米片粉体为纯度在99％以上的六方氮化硼纳米片，所述六方氮化硼纳米片的厚度为1～20原子层，径向尺寸为1～20μm。
  28. 由权利要求11-18中任一项所述方法制备的氮化硼纳米片连续薄膜，所述氮化硼纳米片连续薄膜由尺寸为1～50μm的六方氮化硼纳米片单晶聚集而成，并且所述氮化硼纳米片连续薄膜的厚度介于1～100原子层。
  29. 权利要求28所述的氮化硼纳米片连续薄膜于制备二维纳米材料或包含二维纳米材料的器件中的用途，所述二维纳米材料包括石墨烯或过渡金属二硫化物。
  30. 由权利要求19-26中任一项所述方法制备的一维氮化硼纳米材料，所述一维氮化硼纳米材料包括氮化硼纳米管或氮化硼纳米带。
  31. 根据权利要求30所述的一维氮化硼纳米材料，其特征在于：所述氮化硼纳米管的管壁厚度介于单原子层到多原子层，长度和直径取决于所采取的前驱物；或者，所述氮化硼纳米带的厚度介于单原子层到多原子层，其宽度和长度取决于所采用的前驱物的宽度和长度。
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