CN109166933B - 一种基于石墨烯的等离子激元开关 - Google Patents
一种基于石墨烯的等离子激元开关 Download PDFInfo
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- CN109166933B CN109166933B CN201811010823.7A CN201811010823A CN109166933B CN 109166933 B CN109166933 B CN 109166933B CN 201811010823 A CN201811010823 A CN 201811010823A CN 109166933 B CN109166933 B CN 109166933B
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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CN109407210B (zh) * | 2018-11-12 | 2020-09-25 | 国家纳米科学中心 | 一种基于面内异质结的极化波波导传输耦合装置及制备方法 |
CN110133799B (zh) * | 2019-04-23 | 2021-04-06 | 天津大学 | 基于石墨烯的波导集成的偏振光耦合器及其制作方法 |
CN112255715B (zh) * | 2020-10-23 | 2021-12-03 | 江南大学 | 一种基于超薄金属薄膜实现宽带光吸收增强的方法及吸波装置 |
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CN102336588A (zh) * | 2011-07-22 | 2012-02-01 | 中国科学院上海微系统与信息技术研究所 | 一种具有单原子层台阶的六角氮化硼基底及其制备方法与应用 |
CN106684251A (zh) * | 2016-12-09 | 2017-05-17 | 武汉华星光电技术有限公司 | 柔性垂直沟道有机薄膜晶体管及其制作方法 |
WO2018014494A1 (zh) * | 2016-07-22 | 2018-01-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化硼纳米材料、其制备方法与应用 |
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CN103258849A (zh) * | 2012-02-15 | 2013-08-21 | 西安电子科技大学 | 一种石墨烯场效应晶体管及其制备方法 |
CN103227194B (zh) * | 2013-04-25 | 2015-06-24 | 西安电子科技大学 | 一种大尺寸石墨烯堆叠结构晶圆及其制备方法 |
WO2014210584A1 (en) * | 2013-06-28 | 2014-12-31 | Graphene 3D Lab Inc. | Dispersions for nanoplatelets of graphene-like materials |
CN103439807A (zh) * | 2013-08-28 | 2013-12-11 | 中国科学院半导体研究所 | 石墨烯的低折射率差波导调制器及制备方法 |
US9548394B2 (en) * | 2014-04-22 | 2017-01-17 | Uchicago Argonne, Llc | All 2D, high mobility, flexible, transparent thin film transistor |
CN104099577B (zh) * | 2014-07-29 | 2016-08-24 | 苏州斯迪克新材料科技股份有限公司 | 一种石墨烯的制备方法 |
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CN102336588A (zh) * | 2011-07-22 | 2012-02-01 | 中国科学院上海微系统与信息技术研究所 | 一种具有单原子层台阶的六角氮化硼基底及其制备方法与应用 |
WO2018014494A1 (zh) * | 2016-07-22 | 2018-01-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化硼纳米材料、其制备方法与应用 |
CN106684251A (zh) * | 2016-12-09 | 2017-05-17 | 武汉华星光电技术有限公司 | 柔性垂直沟道有机薄膜晶体管及其制作方法 |
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